Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (151672) > Seite 2485 nach 2528
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AUIRF1010ZSTRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK Type of transistor: N-MOSFET Case: D2PAK Drain-source voltage: 55V Drain current: 94A Power dissipation: 140W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhancement Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BSP452 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Mounting: SMD Number of channels: 1 Case: SOT223-3 On-state resistance: 0.16Ω Technology: Classic PROFET Output voltage: 40V Kind of output: N-Channel |
auf Bestellung 2768 Stücke: Lieferzeit 14-21 Tag (e) |
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IGCM15F60GA | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: PG-MDIP24 Output current: -15...15A Mounting: THT Operating temperature: -40...125°C Frequency: 20kHz Protection: anti-overload OPP; undervoltage UVP Technology: ClPOS™ Mini; TRENCHSTOP™ Topology: IGBT three-phase bridge; thermistor Integrated circuit features: integrated bootstrap functionality Kind of package: tube Operating voltage: 13.5...18.5/0...400V DC Power dissipation: 29W Voltage class: 600V |
Produkt ist nicht verfügbar |
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IRFB4110PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 370W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 698 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2153DPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -260...180mA Number of channels: 2 Supply voltage: 10.1...16.8V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 50ns Turn-on time: 0.12µs Power: 1W Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2153DSPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -260...180mA Number of channels: 2 Supply voltage: 10.1...16.8V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 50ns Turn-on time: 0.12µs Power: 625mW Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality |
auf Bestellung 82 Stücke: Lieferzeit 14-21 Tag (e) |
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IKP10N60TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB Type of transistor: IGBT Power dissipation: 110W Case: TO220AB Mounting: THT Kind of package: tube Gate charge: 62nC Collector current: 10A Gate-emitter voltage: ±20V Pulsed collector current: 30A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 222 Stücke: Lieferzeit 14-21 Tag (e) |
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IGP30N60H3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3 Kind of package: tube Case: TO220-3 Type of transistor: IGBT Mounting: THT Technology: TRENCHSTOP™ 5 Power dissipation: 187W Gate-emitter voltage: ±20V Collector current: 30A Collector-emitter voltage: 600V Manufacturer series: H3 |
auf Bestellung 107 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF1404LPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: TO262 Mounting: THT Kind of channel: enhancement |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF1404PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube Gate charge: 160nC |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF1404STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of channel: enhancement Kind of package: reel |
auf Bestellung 368 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF1404STRRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of channel: enhancement Kind of package: reel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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IRF1404ZPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 190A Power dissipation: 220W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube Gate charge: 0.1µC |
auf Bestellung 1207 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF1404ZSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 190A Power dissipation: 220W Case: D2PAK Mounting: SMD Kind of channel: enhancement Kind of package: reel |
auf Bestellung 733 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF1404S | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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AUIRF1404STRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of channel: enhancement Kind of package: reel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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AUIRF1404ZSTRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of channel: enhancement Kind of package: reel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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TLE4945L | INFINEON TECHNOLOGIES |
![]() Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT Type of sensor: Hall Case: P-SSO-3-2 Range of detectable magnetic field: -10...10mT Supply voltage: 3.8...24V DC Operating temperature: -40...150°C Mounting: THT Kind of sensor: bipolar |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL1404ZPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; TO220AB Case: TO220AB Kind of channel: enhancement Technology: HEXFET® Features of semiconductor devices: logic level Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Gate charge: 75nC On-state resistance: 3.1mΩ Power dissipation: 230W Gate-source voltage: ±16V Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 790A Polarisation: unipolar |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL1404ZSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK Case: D2PAK Kind of channel: enhancement Technology: HEXFET® Features of semiconductor devices: logic level Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel Gate charge: 75nC On-state resistance: 3.1mΩ Power dissipation: 230W Gate-source voltage: ±16V Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 790A Polarisation: unipolar |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF520NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 9.7A; 48W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.7A Power dissipation: 48W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 16.7nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 422 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF540NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 33A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 44mΩ Mounting: THT Kind of channel: enhancement Gate charge: 47.3nC Technology: HEXFET® Kind of package: tube |
auf Bestellung 1925 Stücke: Lieferzeit 14-21 Tag (e) |
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IGP20N65F5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 42A; 125W; TO220-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 125W Case: TO220-3 Mounting: THT Kind of package: tube Collector current: 42A Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Manufacturer series: F5 |
auf Bestellung 178 Stücke: Lieferzeit 14-21 Tag (e) |
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IGP20N65H5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 63W Case: TO220-3 Mounting: THT Kind of package: tube Collector current: 21A Gate-emitter voltage: ±20V Pulsed collector current: 60A Collector-emitter voltage: 650V Manufacturer series: H5 Turn-on time: 26ns Turn-off time: 169ns |
Produkt ist nicht verfügbar |
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IKP20N65F5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 63W Case: TO220-3 Mounting: THT Kind of package: tube Collector current: 21A Gate-emitter voltage: ±20V Pulsed collector current: 60A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 21ns Gate charge: 48nC Turn-off time: 200ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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IKP20N65H5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5 Type of transistor: IGBT Power dissipation: 125W Case: TO220-3 Mounting: THT Kind of package: tube Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 60A Collector-emitter voltage: 650V Manufacturer series: H5 Features of semiconductor devices: integrated anti-parallel diode Gate charge: 48nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SPP20N60CFD | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.1A Power dissipation: 208W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.22Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SPP20N60S5 | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SPP20N65C3 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 208W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.1A Power dissipation: 208W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3205PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Kind of channel: enhancement Gate charge: 146nC Kind of package: tube |
auf Bestellung 1495 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3205STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of channel: enhancement Kind of package: reel |
auf Bestellung 550 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3205STRRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of channel: enhancement Kind of package: reel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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IRF3205ZPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 78A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: THT Kind of channel: enhancement Gate charge: 110nC Kind of package: tube |
Produkt ist nicht verfügbar |
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IRF3205ZSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 78A; Idm: 440A; 170W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 78A Pulsed drain current: 440A Power dissipation: 170W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 110nC Kind of package: reel |
auf Bestellung 659 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF3205Z | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 170W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: THT Kind of channel: enhancement Gate charge: 76nC Kind of package: tube |
Produkt ist nicht verfügbar |
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2N7002DWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Technology: OptiMOS™ Case: PG-SOT-363 Mounting: SMD Polarisation: unipolar Power dissipation: 0.5W Drain current: 0.3A On-state resistance: 4Ω Gate-source voltage: ±20V Drain-source voltage: 60V |
auf Bestellung 12171 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2804STRL7PP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 330W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 320A Power dissipation: 330W Case: D2PAK-7 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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SPW47N65C3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 30A; 415W; PG-TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 415W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: CoolMOS™ |
Produkt ist nicht verfügbar |
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BCR135E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 150MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT6202VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SC79; SMD; 40V; 20mA; 100mW Type of diode: Schottky rectifying Case: SC79 Mounting: SMD Max. off-state voltage: 40V Load current: 20mA Semiconductor structure: single diode Power dissipation: 0.1W |
auf Bestellung 2172 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLML2244TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; 1.3W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.3A Power dissipation: 1.3W Case: SOT23 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 10670 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV70E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.2A; SOT23; 250mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Semiconductor structure: common cathode; double Case: SOT23 Power dissipation: 0.25W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching |
auf Bestellung 2909 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905LPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO262 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -74A Power dissipation: 200W Case: TO262 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: THT Kind of channel: enhancement Gate charge: 0.12µC |
auf Bestellung 97 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO220AB Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -74A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: THT Kind of channel: enhancement Gate charge: 0.12µC Kind of package: tube |
auf Bestellung 2845 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRLPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -74A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of channel: enhancement Kind of package: reel |
auf Bestellung 3197 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -44A; Idm: -280A; 170W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -44A Pulsed drain current: -280A Power dissipation: 170W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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AUIRF4905S | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -44A; 170W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -44A Power dissipation: 170W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 0.12µC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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IGW25N120H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3 Mounting: THT Manufacturer series: H3 Kind of package: tube Collector current: 50A Gate-emitter voltage: ±20V Power dissipation: 326W Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ 3 Type of transistor: IGBT Case: TO247-3 |
auf Bestellung 174 Stücke: Lieferzeit 14-21 Tag (e) |
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IHW25N120E1XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3 Mounting: THT Kind of package: tube Gate charge: 147nC Turn-off time: 2004ns Collector current: 25A Gate-emitter voltage: ±20V Pulsed collector current: 75A Power dissipation: 92.4W Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ RC Type of transistor: IGBT Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Case: TO247-3 |
auf Bestellung 192 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW25N120T2FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3 Mounting: THT Kind of package: tube Gate charge: 0.12µC Collector current: 50A Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 349W Collector-emitter voltage: 1.2kV Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 |
auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9530NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 79W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -14A Power dissipation: 79W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 38.7nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 356 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW40N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 153W Case: TO247-3 Mounting: THT Gate charge: 223nC Kind of package: tube Turn-on time: 52ns Turn-off time: 218ns Collector current: 40A Gate-emitter voltage: ±20V Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 160A Collector-emitter voltage: 600V |
auf Bestellung 202 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138NH6327XTSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23 Kind of channel: enhancement Technology: SIPMOS™ Polarisation: unipolar Type of transistor: N-MOSFET Case: SOT23 Mounting: SMD Drain current: 0.23A Power dissipation: 0.36W On-state resistance: 3.5Ω Gate-source voltage: ±20V Drain-source voltage: 60V |
auf Bestellung 1091 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138NH6433XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 180mA; Idm: 0.92A Kind of channel: enhancement Technology: SIPMOS® Polarisation: unipolar Type of transistor: N-MOSFET Case: SOT23 Mounting: SMD Drain current: 0.18A Power dissipation: 0.36W Pulsed drain current: 0.92A On-state resistance: 3.5Ω Gate-source voltage: ±20V Drain-source voltage: 60V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BSC032N04LSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 3.2mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Power dissipation: 52W Drain current: 83A Case: PG-TDSON-8 Technology: OptiMOS™ |
auf Bestellung 1179 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC034N06NSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 74W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 74W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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IGW40N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 306W Case: TO247-3 Mounting: THT Kind of package: tube Collector current: 40A Gate-emitter voltage: ±20V Manufacturer series: H3 Collector-emitter voltage: 600V |
auf Bestellung 259 Stücke: Lieferzeit 14-21 Tag (e) |
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IHW40N60RFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 40A; 152W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 152W Case: TO247-3 Mounting: THT Gate charge: 223nC Kind of package: tube Turn-off time: 217ns Collector current: 40A Gate-emitter voltage: ±20V Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Pulsed collector current: 120A Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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IKFW40N60DH3EXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 81W Case: PG-TO247-3-AI Mounting: THT Gate charge: 107nC Kind of package: tube Turn-on time: 52ns Turn-off time: 160ns Collector current: 28A Gate-emitter voltage: ±20V Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 90A Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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IGP15N60TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 23A; 130W; TO220-3 Type of transistor: IGBT Power dissipation: 130W Case: TO220-3 Mounting: THT Kind of package: tube Collector current: 23A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF1010ZSTRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK
Type of transistor: N-MOSFET
Case: D2PAK
Drain-source voltage: 55V
Drain current: 94A
Power dissipation: 140W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK
Type of transistor: N-MOSFET
Case: D2PAK
Drain-source voltage: 55V
Drain current: 94A
Power dissipation: 140W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP452 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
On-state resistance: 0.16Ω
Technology: Classic PROFET
Output voltage: 40V
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
On-state resistance: 0.16Ω
Technology: Classic PROFET
Output voltage: 40V
Kind of output: N-Channel
auf Bestellung 2768 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.08 EUR |
27+ | 2.72 EUR |
44+ | 1.66 EUR |
46+ | 1.57 EUR |
2000+ | 1.52 EUR |
IGCM15F60GA |
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Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -15...15A
Mounting: THT
Operating temperature: -40...125°C
Frequency: 20kHz
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
Operating voltage: 13.5...18.5/0...400V DC
Power dissipation: 29W
Voltage class: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -15...15A
Mounting: THT
Operating temperature: -40...125°C
Frequency: 20kHz
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
Operating voltage: 13.5...18.5/0...400V DC
Power dissipation: 29W
Voltage class: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFB4110PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 698 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.69 EUR |
31+ | 2.32 EUR |
58+ | 1.24 EUR |
61+ | 1.17 EUR |
IRS2153DPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -260...180mA
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 1W
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -260...180mA
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 1W
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.92 EUR |
27+ | 2.73 EUR |
IRS2153DSPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 625mW
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 625mW
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.12 EUR |
35+ | 2.04 EUR |
IKP10N60TXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 62nC
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 62nC
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 222 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.27 EUR |
43+ | 1.67 EUR |
55+ | 1.3 EUR |
59+ | 1.23 EUR |
100+ | 1.19 EUR |
IGP30N60H3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3
Kind of package: tube
Case: TO220-3
Type of transistor: IGBT
Mounting: THT
Technology: TRENCHSTOP™ 5
Power dissipation: 187W
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 600V
Manufacturer series: H3
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3
Kind of package: tube
Case: TO220-3
Type of transistor: IGBT
Mounting: THT
Technology: TRENCHSTOP™ 5
Power dissipation: 187W
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 600V
Manufacturer series: H3
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
24+ | 3.03 EUR |
40+ | 1.79 EUR |
43+ | 1.69 EUR |
IRF1404LPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.23 EUR |
23+ | 3.19 EUR |
48+ | 1.52 EUR |
50+ | 1.43 EUR |
IRF1404PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 160nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 160nC
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
42+ | 1.73 EUR |
53+ | 1.36 EUR |
72+ | 1 EUR |
76+ | 0.94 EUR |
IRF1404STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
auf Bestellung 368 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.5 EUR |
39+ | 1.86 EUR |
63+ | 1.14 EUR |
67+ | 1.07 EUR |
IRF1404STRRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF1404ZPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 0.1µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 0.1µC
auf Bestellung 1207 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
42+ | 1.72 EUR |
58+ | 1.24 EUR |
81+ | 0.88 EUR |
86+ | 0.84 EUR |
1000+ | 0.82 EUR |
IRF1404ZSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
auf Bestellung 733 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.47 EUR |
38+ | 1.89 EUR |
53+ | 1.37 EUR |
55+ | 1.3 EUR |
250+ | 1.26 EUR |
AUIRF1404S |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRF1404STRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRF1404ZSTRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE4945L |
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Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Case: P-SSO-3-2
Range of detectable magnetic field: -10...10mT
Supply voltage: 3.8...24V DC
Operating temperature: -40...150°C
Mounting: THT
Kind of sensor: bipolar
Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Case: P-SSO-3-2
Range of detectable magnetic field: -10...10mT
Supply voltage: 3.8...24V DC
Operating temperature: -40...150°C
Mounting: THT
Kind of sensor: bipolar
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
37+ | 1.94 EUR |
40+ | 1.79 EUR |
44+ | 1.66 EUR |
66+ | 1.09 EUR |
70+ | 1.03 EUR |
IRL1404ZPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Gate charge: 75nC
On-state resistance: 3.1mΩ
Power dissipation: 230W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 790A
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Gate charge: 75nC
On-state resistance: 3.1mΩ
Power dissipation: 230W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 790A
Polarisation: unipolar
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.76 EUR |
IRL1404ZSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel
Gate charge: 75nC
On-state resistance: 3.1mΩ
Power dissipation: 230W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 790A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel
Gate charge: 75nC
On-state resistance: 3.1mΩ
Power dissipation: 230W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 790A
Polarisation: unipolar
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
37+ | 1.94 EUR |
49+ | 1.49 EUR |
55+ | 1.32 EUR |
58+ | 1.24 EUR |
100+ | 1.22 EUR |
250+ | 1.2 EUR |
IRF520NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.7A; 48W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.7A
Power dissipation: 48W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.7A; 48W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.7A
Power dissipation: 48W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 422 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
91+ | 0.79 EUR |
104+ | 0.69 EUR |
122+ | 0.59 EUR |
174+ | 0.41 EUR |
184+ | 0.39 EUR |
IRF540NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 47.3nC
Technology: HEXFET®
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 47.3nC
Technology: HEXFET®
Kind of package: tube
auf Bestellung 1925 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.32 EUR |
67+ | 1.08 EUR |
82+ | 0.88 EUR |
151+ | 0.48 EUR |
159+ | 0.45 EUR |
IGP20N65F5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 42A; 125W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 42A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Manufacturer series: F5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 42A; 125W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 42A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Manufacturer series: F5
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.52 EUR |
35+ | 2.07 EUR |
37+ | 1.96 EUR |
100+ | 1.87 EUR |
IGP20N65H5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 63W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 21A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Manufacturer series: H5
Turn-on time: 26ns
Turn-off time: 169ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 63W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 21A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Manufacturer series: H5
Turn-on time: 26ns
Turn-off time: 169ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKP20N65F5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 63W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 21A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 21ns
Gate charge: 48nC
Turn-off time: 200ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 63W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 21A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 21ns
Gate charge: 48nC
Turn-off time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKP20N65H5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SPP20N60CFD |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SPP20N60S5 | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SPP20N65C3 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.65 EUR |
11+ | 6.89 EUR |
14+ | 5.28 EUR |
15+ | 4.98 EUR |
IRF3205PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 146nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 146nC
Kind of package: tube
auf Bestellung 1495 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
43+ | 1.69 EUR |
51+ | 1.41 EUR |
60+ | 1.21 EUR |
125+ | 0.57 EUR |
132+ | 0.54 EUR |
IRF3205STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
auf Bestellung 550 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.52 EUR |
43+ | 1.69 EUR |
91+ | 0.79 EUR |
97+ | 0.74 EUR |
IRF3205STRRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF3205ZPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 110nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 110nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF3205ZSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; Idm: 440A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Pulsed drain current: 440A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 110nC
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; Idm: 440A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Pulsed drain current: 440A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 110nC
Kind of package: reel
auf Bestellung 659 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.59 EUR |
57+ | 1.26 EUR |
84+ | 0.86 EUR |
88+ | 0.82 EUR |
AUIRF3205Z |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 76nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 76nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N7002DWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Technology: OptiMOS™
Case: PG-SOT-363
Mounting: SMD
Polarisation: unipolar
Power dissipation: 0.5W
Drain current: 0.3A
On-state resistance: 4Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Technology: OptiMOS™
Case: PG-SOT-363
Mounting: SMD
Polarisation: unipolar
Power dissipation: 0.5W
Drain current: 0.3A
On-state resistance: 4Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
auf Bestellung 12171 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
246+ | 0.29 EUR |
281+ | 0.25 EUR |
415+ | 0.17 EUR |
494+ | 0.14 EUR |
1454+ | 0.049 EUR |
1539+ | 0.046 EUR |
IRF2804STRL7PP |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 330W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 330W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 330W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 330W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SPW47N65C3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR135E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
BAT6202VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 40V; 20mA; 100mW
Type of diode: Schottky rectifying
Case: SC79
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: single diode
Power dissipation: 0.1W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 40V; 20mA; 100mW
Type of diode: Schottky rectifying
Case: SC79
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: single diode
Power dissipation: 0.1W
auf Bestellung 2172 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.5 EUR |
178+ | 0.4 EUR |
211+ | 0.34 EUR |
275+ | 0.26 EUR |
338+ | 0.21 EUR |
397+ | 0.18 EUR |
421+ | 0.17 EUR |
IRLML2244TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 10670 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
226+ | 0.32 EUR |
253+ | 0.28 EUR |
439+ | 0.16 EUR |
820+ | 0.087 EUR |
834+ | 0.086 EUR |
878+ | 0.082 EUR |
BAV70E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT23; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double
Case: SOT23
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT23; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double
Case: SOT23
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 2909 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
432+ | 0.17 EUR |
521+ | 0.14 EUR |
687+ | 0.1 EUR |
839+ | 0.085 EUR |
1015+ | 0.07 EUR |
1525+ | 0.047 EUR |
1613+ | 0.044 EUR |
1673+ | 0.043 EUR |
IRF4905LPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO262
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.12µC
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO262
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.12µC
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 2 EUR |
42+ | 1.73 EUR |
46+ | 1.59 EUR |
48+ | 1.52 EUR |
IRF4905PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.12µC
Kind of package: tube
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.12µC
Kind of package: tube
auf Bestellung 2845 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.23 EUR |
35+ | 2.07 EUR |
70+ | 1.03 EUR |
74+ | 0.97 EUR |
IRF4905STRLPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
auf Bestellung 3197 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.88 EUR |
28+ | 2.59 EUR |
45+ | 1.6 EUR |
48+ | 1.5 EUR |
800+ | 1.44 EUR |
IRF4905STRRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -44A; Idm: -280A; 170W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -44A
Pulsed drain current: -280A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -44A; Idm: -280A; 170W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -44A
Pulsed drain current: -280A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRF4905S |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -44A; 170W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -44A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 0.12µC
Kind of package: tube
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -44A; 170W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -44A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 0.12µC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGW25N120H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Kind of package: tube
Collector current: 50A
Gate-emitter voltage: ±20V
Power dissipation: 326W
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 3
Type of transistor: IGBT
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Kind of package: tube
Collector current: 50A
Gate-emitter voltage: ±20V
Power dissipation: 326W
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 3
Type of transistor: IGBT
Case: TO247-3
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.45 EUR |
17+ | 4.39 EUR |
18+ | 4.15 EUR |
30+ | 3.99 EUR |
IHW25N120E1XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 147nC
Turn-off time: 2004ns
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Power dissipation: 92.4W
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ RC
Type of transistor: IGBT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 147nC
Turn-off time: 2004ns
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Power dissipation: 92.4W
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ RC
Type of transistor: IGBT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Case: TO247-3
auf Bestellung 192 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.76 EUR |
27+ | 2.67 EUR |
29+ | 2.53 EUR |
60+ | 2.47 EUR |
120+ | 2.43 EUR |
IKW25N120T2FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Collector current: 50A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 349W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Collector current: 50A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 349W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.18 EUR |
15+ | 5.02 EUR |
16+ | 4.75 EUR |
IRF9530NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 79W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -14A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 38.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 79W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -14A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 38.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 356 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
89+ | 0.8 EUR |
96+ | 0.75 EUR |
127+ | 0.57 EUR |
134+ | 0.54 EUR |
250+ | 0.53 EUR |
IKW40N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 153W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 218ns
Collector current: 40A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 153W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 218ns
Collector current: 40A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Collector-emitter voltage: 600V
auf Bestellung 202 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.66 EUR |
17+ | 4.22 EUR |
30+ | 4.1 EUR |
BSS138NH6327XTSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Kind of channel: enhancement
Technology: SIPMOS™
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Kind of channel: enhancement
Technology: SIPMOS™
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
auf Bestellung 1091 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
407+ | 0.18 EUR |
583+ | 0.12 EUR |
684+ | 0.1 EUR |
1091+ | 0.066 EUR |
BSS138NH6433XTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 180mA; Idm: 0.92A
Kind of channel: enhancement
Technology: SIPMOS®
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Drain current: 0.18A
Power dissipation: 0.36W
Pulsed drain current: 0.92A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 180mA; Idm: 0.92A
Kind of channel: enhancement
Technology: SIPMOS®
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Drain current: 0.18A
Power dissipation: 0.36W
Pulsed drain current: 0.92A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC032N04LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 52W
Drain current: 83A
Case: PG-TDSON-8
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 52W
Drain current: 83A
Case: PG-TDSON-8
Technology: OptiMOS™
auf Bestellung 1179 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.59 EUR |
55+ | 1.32 EUR |
73+ | 0.99 EUR |
76+ | 0.94 EUR |
77+ | 0.93 EUR |
80+ | 0.9 EUR |
BSC034N06NSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGW40N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 306W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 40A
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 306W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 40A
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector-emitter voltage: 600V
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.28 EUR |
19+ | 3.78 EUR |
21+ | 3.56 EUR |
30+ | 3.43 EUR |
IHW40N60RFKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 40A; 152W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 152W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-off time: 217ns
Collector current: 40A
Gate-emitter voltage: ±20V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 40A; 152W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 152W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-off time: 217ns
Collector current: 40A
Gate-emitter voltage: ±20V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKFW40N60DH3EXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 81W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 160ns
Collector current: 28A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 81W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 160ns
Collector current: 28A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 90A
Collector-emitter voltage: 600V
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IGP15N60TXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; TO220-3
Type of transistor: IGBT
Power dissipation: 130W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 23A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; TO220-3
Type of transistor: IGBT
Power dissipation: 130W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 23A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
30+ | 2.45 EUR |
54+ | 1.34 EUR |
63+ | 1.14 EUR |
67+ | 1.07 EUR |