Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149742) > Seite 2485 nach 2496
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BSZ088N03LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8 Mounting: SMD Case: PG-TSDSON-8 Drain current: 40A Power dissipation: 35W Polarisation: unipolar Drain-source voltage: 30V Technology: OptiMOS™ 3 Kind of channel: enhancement Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 8.8mΩ |
Produkt ist nicht verfügbar |
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BSC022N04LS6ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 79W Drain-source voltage: 40V Drain current: 100A On-state resistance: 2.2mΩ Type of transistor: N-MOSFET Power dissipation: 79W Polarisation: unipolar Kind of package: reel; tape Gate charge: 28nC Technology: OptiMOS™ 6 Kind of channel: enhancement Mounting: SMD Case: PG-TDSON-8 FL |
Produkt ist nicht verfügbar |
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BSC022N04LSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 69W; PG-TDSON-8 Drain-source voltage: 40V Drain current: 100A On-state resistance: 2.2mΩ Type of transistor: N-MOSFET Power dissipation: 69W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |
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AIHD04N60RATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 75W Case: DPAK Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 4A Pulsed collector current: 12A Turn-on time: 22ns Turn-off time: 317ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Gate charge: 27nC |
Produkt ist nicht verfügbar |
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AIHD04N60RFATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 4A; 75W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 75W Case: DPAK Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 4A Pulsed collector current: 12A Turn-on time: 19ns Turn-off time: 153ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Gate charge: 27nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
CY7C1011DV33-10BVXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 10ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |
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CY7C1011G30-12ZSXE | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 12ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1011G30-12ZSXET | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 12ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1019DV33-10BVXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Case: VFBGA48 Mounting: SMD Supply voltage: 3...3.6V DC Operating temperature: -40...85°C Kind of interface: parallel Memory: 1Mb SRAM Kind of memory: SRAM Memory organisation: 128kx8bit Access time: 10ns Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1019DV33-10VXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; SOJ32; parallel Type of integrated circuit: SRAM memory Case: SOJ32 Mounting: SMD Supply voltage: 3...3.6V DC Operating temperature: -40...85°C Kind of interface: parallel Memory: 1Mb SRAM Kind of memory: SRAM Memory organisation: 128kx8bit Access time: 10ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1020D-10ZSXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of interface: parallel Memory: 512kb SRAM Kind of memory: SRAM Memory organisation: 32kx16bit Access time: 10ns Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1020D-10ZSXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of interface: parallel Memory: 512kb SRAM Kind of memory: SRAM Memory organisation: 32kx16bit Access time: 10ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1020DV33-10ZSXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Supply voltage: 3...3.6V DC Operating temperature: -40...85°C Kind of interface: parallel Memory: 512kb SRAM Kind of memory: SRAM Memory organisation: 32kx16bit Access time: 10ns Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1021D-10VXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel Type of integrated circuit: SRAM memory Case: SOJ44 Mounting: SMD Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of interface: parallel Memory: 1Mb SRAM Kind of memory: SRAM Memory organisation: 64kx16bit Access time: 10ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1021D-10ZSXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of interface: parallel Memory: 1Mb SRAM Kind of memory: SRAM Memory organisation: 64kx16bit Access time: 10ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1021DV33-10VXI | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel; tube Type of integrated circuit: SRAM memory Case: SOJ44 Mounting: SMD Supply voltage: 3...3.6V DC Operating temperature: -40...85°C Kind of interface: parallel Memory: 1Mb SRAM Kind of memory: SRAM Memory organisation: 64kx16bit Access time: 10ns Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1021DV33-10BVXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Case: VFBGA48 Mounting: SMD Supply voltage: 3...3.6V DC Operating temperature: -40...85°C Kind of interface: parallel Memory: 1Mb SRAM Kind of memory: SRAM Memory organisation: 64kx16bit Access time: 10ns Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1021DV33-10VXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel Type of integrated circuit: SRAM memory Case: SOJ44 Mounting: SMD Supply voltage: 3...3.6V DC Operating temperature: -40...85°C Kind of interface: parallel Memory: 1Mb SRAM Kind of memory: SRAM Memory organisation: 64kx16bit Access time: 10ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1041G-10VXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube Type of integrated circuit: SRAM memory Case: SOJ44 Mounting: SMD Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of interface: parallel Memory: 4Mb SRAM Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 10ns Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1041G-10VXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel Type of integrated circuit: SRAM memory Case: SOJ44 Mounting: SMD Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of interface: parallel Memory: 4Mb SRAM Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 10ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1041G-10ZSXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of interface: parallel Memory: 4Mb SRAM Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 10ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1041G18-15BVXI | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 15ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Case: VFBGA48 Mounting: SMD Supply voltage: 1.65...2.2V DC Operating temperature: -40...85°C Kind of interface: parallel Memory: 4Mb SRAM Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 15ns Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1041G18-15BVXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 15ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Case: VFBGA48 Mounting: SMD Supply voltage: 1.65...2.2V DC Operating temperature: -40...85°C Kind of interface: parallel Memory: 4Mb SRAM Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 15ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1041G30-10VXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube Type of integrated circuit: SRAM memory Case: SOJ44 Mounting: SMD Supply voltage: 2.2...3.6V DC Operating temperature: -40...85°C Kind of interface: parallel Memory: 4Mb SRAM Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 10ns Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1041G30-10VXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel Type of integrated circuit: SRAM memory Case: SOJ44 Mounting: SMD Supply voltage: 2.2...3.6V DC Operating temperature: -40...85°C Kind of interface: parallel Memory: 4Mb SRAM Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 10ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1041G30-10ZSXA | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Supply voltage: 2.2...3.6V DC Operating temperature: -40...85°C Kind of interface: parallel Memory: 4Mb SRAM Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 10ns Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1041G30-10ZSXE | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Supply voltage: 2.2...3.6V DC Operating temperature: -40...125°C Kind of interface: parallel Memory: 4Mb SRAM Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 10ns Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TLE9350VSJXTMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: interface Type of integrated circuit: interface |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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XMC1202Q024X0032ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1200 Case: PG-VQFN-24 Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x2 Number of inputs/outputs: 22 Number of 16bit timers: 4 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M0 Family: XMC1200 Memory: 16kB SRAM; 32kB FLASH Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY62128ELL-45SXA | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 45ns Case: SO32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY62128ELL-45SXAT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 45ns Case: SO32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY62128ELL-55SXE | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; SO32; parallel; tube Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 55ns Case: SO32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Supply voltage: 4.5...5.5V DC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY62128ELL-55SXET | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; SO32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 55ns Case: SO32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY62128ELL-55ZAXE | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; STSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 55ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Supply voltage: 4.5...5.5V DC Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY62128ELL-55ZAXET | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; STSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 55ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY62128EV30LL-45ZAXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; STSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 45ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY62128EV30LL-45SXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 45ns Case: SO32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY62128EV30LL-45ZXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; TSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 45ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SPB21N50C3ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPT015N10NF2SATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 1800 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB044N15N5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 123A; Idm: 696A; 300W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 123A Pulsed drain current: 696A Power dissipation: 300W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
ETD540N22P60HPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: diode-thyristor; 2.2kV; 542A; BG-PB60ECO-1; Ufmax: 1.73V Case: BG-PB60ECO-1 Max. off-state voltage: 2.2kV Max. load current: 700A Max. forward voltage: 1.73V Load current: 542A Semiconductor structure: double series Gate current: 250mA Max. forward impulse current: 16.3kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of semiconductor module: diode-thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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XMC4700E196K2048AAXQMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LFBGA-196; 352kBSRAM,2048kBFLASH Operating temperature: -40...125°C Number of inputs/outputs: 155 Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4700 Memory: 352kB SRAM; 2MB FLASH Case: PG-LFBGA-196 Supply voltage: 3.3V DC Type of integrated circuit: ARM microcontroller Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IDP30E65D1XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 90A; TO220-2; 143W Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 30A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.35V Max. forward impulse current: 90A Kind of package: tube Power dissipation: 143W Features of semiconductor devices: fast switching |
auf Bestellung 128 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16SH6727XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching Type of diode: switching |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBT3906E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.33W; SOT23 Frequency: 250MHz Collector-emitter voltage: 40V Collector current: 0.2A Type of transistor: PNP Power dissipation: 0.33W Polarisation: bipolar Mounting: SMD Case: SOT23 |
auf Bestellung 1770 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD90P03P4L04ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -90A; 137W Type of transistor: P-MOSFET Technology: OptiMOS® -P2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -90A Pulsed drain current: -360A Power dissipation: 137W Case: PG-TO252-3-11 Gate-source voltage: -5...16V On-state resistance: 4.1mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BTS3118N | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2.17A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 70mΩ Technology: HITFET® Output voltage: 42V |
auf Bestellung 1918 Stücke: Lieferzeit 14-21 Tag (e) |
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IDK02G120C5XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 2A; 75W Type of diode: Schottky rectifying Case: PG-TO263-2 Technology: CoolSiC™ 5G; SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.7V Leakage current: 6µA Max. forward impulse current: 31A Kind of package: reel; tape Power dissipation: 75W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IDK02G65C5 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 2A; 36W Type of diode: Schottky rectifying Case: PG-TO263-2 Technology: CoolSiC™ 5G; SiC Mounting: SMD Max. off-state voltage: 650V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.8V Leakage current: 0.4µA Max. forward impulse current: 22A Kind of package: reel; tape Power dissipation: 36W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IDK02G65C5XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 2A; 36W Type of diode: Schottky rectifying Case: PG-TO263-2 Technology: CoolSiC™ 5G; SiC Mounting: SMD Max. off-state voltage: 650V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.5V Leakage current: 0.1µA Max. forward impulse current: 22A Kind of package: reel; tape Power dissipation: 36W |
auf Bestellung 646 Stücke: Lieferzeit 14-21 Tag (e) |
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TLE6225GXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch Type of integrated circuit: power switch |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCV62CE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143 Mounting: SMD Frequency: 250MHz Collector-emitter voltage: 30V Collector current: 0.1A Type of transistor: PNP x2 Power dissipation: 0.3W Polarisation: bipolar Case: SOT143 |
auf Bestellung 377 Stücke: Lieferzeit 14-21 Tag (e) |
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IKCM15L60GDXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Mini; TRENCHSTOP™ Case: PG-MDIP24 Output current: -15...15A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18.5/0...400V DC Frequency: 20kHz Voltage class: 600V Power dissipation: 58.6W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IKCM20L60GAXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Mini; TRENCHSTOP™ Case: PG-MDIP24 Output current: -20...20A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18.5/0...400V DC Frequency: 20kHz Voltage class: 600V Power dissipation: 29.2W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
CY7C64225-28PVXC | INFINEON TECHNOLOGIES |
![]() Description: CY7C64225-28PVXC |
auf Bestellung 215 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ900N20NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 15.2A; 62.5W; PG-TSDSON-8 Drain-source voltage: 200V Drain current: 15.2A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 62.5W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-TSDSON-8 |
auf Bestellung 975 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ900N15NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 13A; 38W; PG-TSDSON-8 Drain-source voltage: 150V Drain current: 13A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-TSDSON-8 |
auf Bestellung 3058 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR116E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 102000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR116E6433HTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ088N03LSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: 40A
Power dissipation: 35W
Polarisation: unipolar
Drain-source voltage: 30V
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: 40A
Power dissipation: 35W
Polarisation: unipolar
Drain-source voltage: 30V
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC022N04LS6ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 79W
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 79W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28nC
Technology: OptiMOS™ 6
Kind of channel: enhancement
Mounting: SMD
Case: PG-TDSON-8 FL
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 79W
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 79W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28nC
Technology: OptiMOS™ 6
Kind of channel: enhancement
Mounting: SMD
Case: PG-TDSON-8 FL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC022N04LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 69W; PG-TDSON-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 69W; PG-TDSON-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AIHD04N60RATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 4A
Pulsed collector current: 12A
Turn-on time: 22ns
Turn-off time: 317ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 27nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 4A
Pulsed collector current: 12A
Turn-on time: 22ns
Turn-off time: 317ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 27nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AIHD04N60RFATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 4A
Pulsed collector current: 12A
Turn-on time: 19ns
Turn-off time: 153ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 27nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 4A
Pulsed collector current: 12A
Turn-on time: 19ns
Turn-off time: 153ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 27nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1011DV33-10BVXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1011G30-12ZSXE |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1011G30-12ZSXET |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1019DV33-10BVXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Kind of package: in-tray
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1019DV33-10VXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Case: SOJ32
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Case: SOJ32
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1020D-10ZSXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: in-tray
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1020D-10ZSXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1020DV33-10ZSXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: in-tray
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1021D-10VXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1021D-10ZSXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1021DV33-10VXI | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1021DV33-10BVXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: in-tray
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1021DV33-10VXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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CY7C1041G-10VXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1041G-10VXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1041G-10ZSXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1041G18-15BVXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 15ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 1.65...2.2V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 15ns
Kind of package: in-tray
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 15ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 1.65...2.2V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 15ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1041G18-15BVXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 15ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 1.65...2.2V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 15ns
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 15ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 1.65...2.2V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 15ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1041G30-10VXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1041G30-10VXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1041G30-10ZSXA |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: in-tray
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1041G30-10ZSXE |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...125°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: in-tray
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...125°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE9350VSJXTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.84 EUR |
XMC1202Q024X0032ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1200
Case: PG-VQFN-24
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1200
Case: PG-VQFN-24
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62128ELL-45SXA |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62128ELL-45SXAT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62128ELL-55SXE |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; SO32; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; SO32; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62128ELL-55SXET |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; SO32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; SO32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62128ELL-55ZAXE |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: in-tray
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62128ELL-55ZAXET |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62128EV30LL-45ZAXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62128EV30LL-45SXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62128EV30LL-45ZXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SPB21N50C3ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 1.72 EUR |
IPT015N10NF2SATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1800+ | 2.40 EUR |
IPB044N15N5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 123A; Idm: 696A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 123A
Pulsed drain current: 696A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 123A; Idm: 696A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 123A
Pulsed drain current: 696A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen
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ETD540N22P60HPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 542A; BG-PB60ECO-1; Ufmax: 1.73V
Case: BG-PB60ECO-1
Max. off-state voltage: 2.2kV
Max. load current: 700A
Max. forward voltage: 1.73V
Load current: 542A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 16.3kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 542A; BG-PB60ECO-1; Ufmax: 1.73V
Case: BG-PB60ECO-1
Max. off-state voltage: 2.2kV
Max. load current: 700A
Max. forward voltage: 1.73V
Load current: 542A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 16.3kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XMC4700E196K2048AAXQMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 352kBSRAM,2048kBFLASH
Operating temperature: -40...125°C
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Memory: 352kB SRAM; 2MB FLASH
Case: PG-LFBGA-196
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 352kBSRAM,2048kBFLASH
Operating temperature: -40...125°C
Number of inputs/outputs: 155
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Memory: 352kB SRAM; 2MB FLASH
Case: PG-LFBGA-196
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IDP30E65D1XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 90A; TO220-2; 143W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.35V
Max. forward impulse current: 90A
Kind of package: tube
Power dissipation: 143W
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 90A; TO220-2; 143W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.35V
Max. forward impulse current: 90A
Kind of package: tube
Power dissipation: 143W
Features of semiconductor devices: fast switching
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.26 EUR |
44+ | 1.66 EUR |
48+ | 1.52 EUR |
50+ | 1.43 EUR |
BAS16SH6727XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.07 EUR |
SMBT3906E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.33W; SOT23
Frequency: 250MHz
Collector-emitter voltage: 40V
Collector current: 0.2A
Type of transistor: PNP
Power dissipation: 0.33W
Polarisation: bipolar
Mounting: SMD
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.33W; SOT23
Frequency: 250MHz
Collector-emitter voltage: 40V
Collector current: 0.2A
Type of transistor: PNP
Power dissipation: 0.33W
Polarisation: bipolar
Mounting: SMD
Case: SOT23
auf Bestellung 1770 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.20 EUR |
582+ | 0.12 EUR |
711+ | 0.10 EUR |
784+ | 0.09 EUR |
906+ | 0.08 EUR |
1145+ | 0.06 EUR |
1211+ | 0.06 EUR |
IPD90P03P4L04ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -90A; 137W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -90A
Pulsed drain current: -360A
Power dissipation: 137W
Case: PG-TO252-3-11
Gate-source voltage: -5...16V
On-state resistance: 4.1mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -90A; 137W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -90A
Pulsed drain current: -360A
Power dissipation: 137W
Case: PG-TO252-3-11
Gate-source voltage: -5...16V
On-state resistance: 4.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTS3118N |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 1918 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.07 EUR |
48+ | 1.52 EUR |
55+ | 1.32 EUR |
58+ | 1.24 EUR |
100+ | 1.23 EUR |
250+ | 1.20 EUR |
IDK02G120C5XTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 2A; 75W
Type of diode: Schottky rectifying
Case: PG-TO263-2
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 6µA
Max. forward impulse current: 31A
Kind of package: reel; tape
Power dissipation: 75W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 2A; 75W
Type of diode: Schottky rectifying
Case: PG-TO263-2
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 6µA
Max. forward impulse current: 31A
Kind of package: reel; tape
Power dissipation: 75W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IDK02G65C5 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 2A; 36W
Type of diode: Schottky rectifying
Case: PG-TO263-2
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Leakage current: 0.4µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Power dissipation: 36W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 2A; 36W
Type of diode: Schottky rectifying
Case: PG-TO263-2
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Leakage current: 0.4µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Power dissipation: 36W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IDK02G65C5XTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 2A; 36W
Type of diode: Schottky rectifying
Case: PG-TO263-2
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Leakage current: 0.1µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Power dissipation: 36W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 2A; 36W
Type of diode: Schottky rectifying
Case: PG-TO263-2
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Leakage current: 0.1µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Power dissipation: 36W
auf Bestellung 646 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
131+ | 0.55 EUR |
137+ | 0.52 EUR |
143+ | 0.50 EUR |
TLE6225GXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 3.46 EUR |
BCV62CE6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 30V
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.3W
Polarisation: bipolar
Case: SOT143
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 30V
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.3W
Polarisation: bipolar
Case: SOT143
auf Bestellung 377 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
248+ | 0.29 EUR |
368+ | 0.19 EUR |
IKCM15L60GDXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 58.6W
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 58.6W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKCM20L60GAXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 29.2W
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 29.2W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C64225-28PVXC |
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Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CY7C64225-28PVXC
Category: Integrated circuits - Unclassified
Description: CY7C64225-28PVXC
auf Bestellung 215 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
47+ | 3.98 EUR |
141+ | 3.58 EUR |
BSZ900N20NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 15.2A; 62.5W; PG-TSDSON-8
Drain-source voltage: 200V
Drain current: 15.2A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 15.2A; 62.5W; PG-TSDSON-8
Drain-source voltage: 200V
Drain current: 15.2A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
auf Bestellung 975 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.92 EUR |
46+ | 1.59 EUR |
55+ | 1.32 EUR |
58+ | 1.24 EUR |
250+ | 1.23 EUR |
500+ | 1.20 EUR |
BSZ900N15NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 13A; 38W; PG-TSDSON-8
Drain-source voltage: 150V
Drain current: 13A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 13A; 38W; PG-TSDSON-8
Drain-source voltage: 150V
Drain current: 13A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
auf Bestellung 3058 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.43 EUR |
65+ | 1.12 EUR |
100+ | 0.72 EUR |
106+ | 0.68 EUR |
500+ | 0.65 EUR |
BCR116E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 102000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.04 EUR |
BCR116E6433HTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.04 EUR |