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TLD1120ELXUMA1 TLD1120ELXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CD141BFF73C93D1&compId=TLD1120EL.pdf?ci_sign=96300b4bd44c785763f84797c1c0de64acd9edfd Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA
Operating voltage: 5.5...40V DC
Output current: 0.36A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: high-side; LED driver
Mounting: SMD
Case: PG-SSOP-14-EP
auf Bestellung 2352 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.23 EUR
81+0.89 EUR
94+0.76 EUR
100+0.72 EUR
102+0.71 EUR
250+0.69 EUR
Mindestbestellmenge: 59
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BTS723GW BTS723GW INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697CF8E11EA0469&compId=BTS723GW.pdf?ci_sign=8028509f6986f4e588434f8404d65e1c0adc8028 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.9...4.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 53mΩ
Supply voltage: 7...58V DC
Technology: Classic PROFET
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.41 EUR
14+5.32 EUR
15+5.03 EUR
Mindestbestellmenge: 8
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IRS4427PBF IRS4427PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA864536E4D93D7&compId=IRS4427PBF.pdf?ci_sign=18bc1ab6bdaf203e717df27cfa52960c5ee10db1 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -3.3...2.3A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 50ns
Produkt ist nicht verfügbar
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IRFH5301TRPBF IRFH5301TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B71727F19FF1A303005056AB0C4F&compId=irfh5301pbf.pdf?ci_sign=69f6e6f9e392415bb914073c39b2b8b923255e3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FZ600R12KE3HOSA1 FZ600R12KE3HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B429DD0D2FC469&compId=FZ600R12KE3.pdf?ci_sign=868834a23490657b7f01821c752b76da3c7c6933 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 2.8kW
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Produkt ist nicht verfügbar
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FZ400R12KS4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDABBD2E6ABB71060C7&compId=FZ400R12KS4.pdf?ci_sign=38ee09c54c6e231e906f63e53875a0cb78b3b52e Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 2.5kW
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Produkt ist nicht verfügbar
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FF450R12KT4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869893D7BCFB4469&compId=FF450R12KT4.pdf?ci_sign=ae61a33310ba1063c05140bf85a5eae3ea9365d5 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Power dissipation: 2.4kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Produkt ist nicht verfügbar
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FF450R12KE4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ABF791B428A7DE27&compId=FF450R12KE4-DTE.pdf?ci_sign=ea990a008d4cd0a41ce5a30a9a09bff4050731f0 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 2.4kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Produkt ist nicht verfügbar
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FZ900R12KE4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B88F18F860860D5&compId=FZ900R12KE4.pdf?ci_sign=23fa0b5b27e80ccd677c32a3a61818263e8ce358 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MMES
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 4.3kW
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Produkt ist nicht verfügbar
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DF400R12KE3HOSA1 DF400R12KE3HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CDF8B8F122253D7&compId=DF400R12KE3.pdf?ci_sign=c0ee8fc01e207ac3de7635995e03cffedee02f43 Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 2kW
Topology: buck chopper
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Produkt ist nicht verfügbar
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FF200R12KE3HOSA1 FF200R12KE3HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FD6BFDD0F906745&compId=FF200R12KE3.pdf?ci_sign=f153117c762ff8f8b62ebc993737473163b2a468 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 1.05kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
1+158.02 EUR
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TT260N22KOFHOSA1 TT260N22KOFHOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE7AC9E2082469&compId=TT260N22KOF.pdf?ci_sign=28d540274c7a6cf55effab82fa3567854f9dd7f9 Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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FF200R12KT3EHOSA1 FF200R12KT3EHOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A398A572F53D7&compId=FF200R12KT3E.pdf?ci_sign=7d379c22644bc6b2701cdde2fb53b0018b9a5173 Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Power dissipation: 1.05kW
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Produkt ist nicht verfügbar
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FF300R12KT3EHOSA1 FF300R12KT3EHOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A6B34C2C213D7&compId=FF300R12KT3E.pdf?ci_sign=fd144bb2674acaa882bf1dd9f81d465f7011f7f3 Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Power dissipation: 1.45kW
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Produkt ist nicht verfügbar
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FF200R12KE4PHOSA1 FF200R12KE4PHOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A348FD319B3D7&compId=FF200R12KE4P.pdf?ci_sign=c3b8d527485471d02faae9add4b3248119e8cbfe Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Produkt ist nicht verfügbar
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FP100R12KT4B11BOSA1 INFINEON TECHNOLOGIES Infineon-FP100R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a3043156fd57301161a6b3faf1e18 Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W
Pulsed collector current: 200A
Power dissipation: 515W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-ECONO3-3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Produkt ist nicht verfügbar
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BTS724G BTS724G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBC9E5A998E90469&compId=BTS724G.pdf?ci_sign=fdbdc60cc29109e80227e1510eebe17cccc6aecd Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Output current: 3.3...7.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 22.5mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Kind of integrated circuit: high-side
auf Bestellung 939 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.32 EUR
17+4.26 EUR
18+4.03 EUR
Mindestbestellmenge: 9
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BSC014N04LSIATMA1 BSC014N04LSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25D852524411C&compId=BSC014N04LSI-DTE.pdf?ci_sign=53868b51fbb5ec3ed88489a6d0c056d375046e73 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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BSZ034N04LSATMA1 BSZ034N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DFBAB1A7CC11C&compId=BSZ034N04LS-DTE.pdf?ci_sign=f949cc7fd22e98717d29d2031c01c57f8fe57307 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 52W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF6216TRPBF IRF6216TRPBF INFINEON TECHNOLOGIES irf6216pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Drain-source voltage: -150V
Drain current: -2.2A
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Produkt ist nicht verfügbar
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IDW100E60FKSA1 IDW100E60FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA2820D32932469&compId=IDW100E60FKSA1.pdf?ci_sign=270dfcfc56663cc33471054f1c8a3589c99f451d Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO247-3
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.45 EUR
29+2.46 EUR
Mindestbestellmenge: 14
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IRFSL7430PBF IRFSL7430PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBF23C0F0390143&compId=IRFSL7430PBF.pdf?ci_sign=7f386f176a2cb5c5d006cc4f9534444664bf3296 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 301A; 375W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 301A
Power dissipation: 375W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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BCR141E6327 BCR141E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C592F4B4A0A469&compId=BCR141.pdf?ci_sign=6735c9f133de00805775cd3a1803dbbcf5242143 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 130MHz
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 5139 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
228+0.31 EUR
371+0.19 EUR
439+0.16 EUR
637+0.11 EUR
1386+0.052 EUR
1467+0.049 EUR
Mindestbestellmenge: 167
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IPP048N12N3GXKSA1 IPP048N12N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC73EFFD0DC11C&compId=IPP048N12N3G-DTE.pdf?ci_sign=ffecbc2563f0f7e1ca375968b8dceaabdd38fe7b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.88 EUR
27+2.67 EUR
29+2.53 EUR
Mindestbestellmenge: 13
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BSC054N04NSGATMA1 BSC054N04NSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C30364D1F0C11C&compId=BSC054N04NSG-DTE.pdf?ci_sign=02f4a91d4cdbcf956c2d10d5c13def34fb97916e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 81A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSB014N04LX3GXUMA1 BSB014N04LX3GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C1FF40A8D2011C&compId=BSB014N04LX3G-DTE.pdf?ci_sign=6832f0b7ea205274644da112008db3155abffb0c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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BSC014N04LSATMA1 BSC014N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25A9939DDA11C&compId=BSC014N04LS-DTE.pdf?ci_sign=702ca4986b6c1f5e5d8f755d7d5c4d74798c8fd0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IRLTS6342TRPBF IRLTS6342TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22282476BD4DAF1A303005056AB0C4F&compId=irlts6342pbf.pdf?ci_sign=e247a54c761d43482cdc3c03bb2b306196ea7d84 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 30V
Drain current: 8.3A
auf Bestellung 613 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
162+0.44 EUR
194+0.37 EUR
224+0.32 EUR
253+0.28 EUR
268+0.27 EUR
275+0.26 EUR
Mindestbestellmenge: 112
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DDB6U205N16LHOSA1 DDB6U205N16LHOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CC1972638CA0D5&compId=DDB6U205N16LHOSA1.pdf?ci_sign=6dffeb89eddb8bd4f1e60339664ff7deab328ac8 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 205A; screw
Case: AG-ISOPACK
Electrical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Leads: M5 screws
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.47V
Load current: 205A
Max. forward impulse current: 1.375kA
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+278.85 EUR
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ITS4141NHUMA1 ITS4141NHUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6DF8054C3B5EA&compId=ITS4141N.pdf?ci_sign=e124ff2bc030b4d051faaf0434cbcb829927b7f4 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Operating temperature: -30...85°C
Case: SOT223
Supply voltage: 12...45V DC
On-state resistance: 0.2Ω
Turn-on time: 150µs
Turn-off time: 0.1ms
Output current: 0.7A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 1.4W
Kind of package: reel; tape
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Mounting: SMD
auf Bestellung 2826 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.17 EUR
49+1.47 EUR
54+1.34 EUR
57+1.27 EUR
250+1.23 EUR
500+1.22 EUR
Mindestbestellmenge: 33
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BTS3405G BTS3405G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E076C4E98469&compId=BTS3405G.pdf?ci_sign=8f9574202640d62b6b0b3043218a9c425ff98c55 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 350mA; Ch: 2; N-Channel; SMD; HITFET®
Type of integrated circuit: power switch
Output voltage: 10V
Output current: 0.35A
Case: PG-DSO-8-25
Mounting: SMD
Number of channels: 2
Technology: HITFET®
Kind of integrated circuit: low-side
On-state resistance: 0.35Ω
Kind of output: N-Channel
auf Bestellung 2209 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.92 EUR
39+1.87 EUR
47+1.54 EUR
49+1.47 EUR
100+1.42 EUR
Mindestbestellmenge: 25
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BAT1704E6327HTSA1 BAT1704E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFF73F55472469&compId=BAT1704E6327HTSA1.pdf?ci_sign=ec65d261eef5013a28cd9465ec3a7878d859e4c0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Power dissipation: 0.15W
Produkt ist nicht verfügbar
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BSS83PH6327XTSA1 BSS83PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928D6EDF37B1CC&compId=BSS83PH6327XTSA1-dte.pdf?ci_sign=af6b6a3bc6b9093bad4b1410edb90e4f35d69241 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
240+0.3 EUR
Mindestbestellmenge: 173
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BSZ105N04NSGATMA1 BSZ105N04NSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8D887E788EC143&compId=BSZ105N04NSG.pdf?ci_sign=f7af05d5643b125769d0c3f54426bbc9fc8e81a5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 29A
Power dissipation: 35W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 13nC
Produkt ist nicht verfügbar
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BCR112E6327HTSA1
+1
 		BCR112E6327HTSA1 INFINEON TECHNOLOGIES bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 5583 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
447+0.16 EUR
680+0.11 EUR
920+0.078 EUR
1441+0.05 EUR
1454+0.049 EUR
1539+0.046 EUR
3000+0.045 EUR
Mindestbestellmenge: 250
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BCR148E6327 BCR148E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C58B4B5D02A469&compId=BCR148.pdf?ci_sign=e97eb104b0c53699eb1c27d2f3eeba910076f276 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 7165 Stücke:
Lieferzeit 14-21 Tag (e)
731+0.098 EUR
812+0.088 EUR
1060+0.067 EUR
1122+0.064 EUR
3000+0.063 EUR
Mindestbestellmenge: 731
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BCR185E6327 BCR185E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C579BD09108469&compId=BCR185.pdf?ci_sign=8b5a427d7e89c96143962f50eb7401ae7f4fadba Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2800 Stücke:
Lieferzeit 14-21 Tag (e)
913+0.078 EUR
1017+0.07 EUR
1150+0.062 EUR
1327+0.054 EUR
1405+0.051 EUR
Mindestbestellmenge: 913
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IRFL024ZTRPBF IRFL024ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCE3F07F0275EA&compId=IRFL024ZTRPBF.pdf?ci_sign=8c23d246f7a2ed4b15ce6df643c8a84d048dd9c2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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CY15B004J-SXA INFINEON TECHNOLOGIES Infineon-CY15B004J_4-Kbit_(512_x_8)_Serial_(I2C)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3263c6a2f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 1MHz
Memory: 4kb FRAM
Produkt ist nicht verfügbar
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CY15B004J-SXAT INFINEON TECHNOLOGIES Infineon-CY15B004J_4-Kbit_(512_x_8)_Serial_(I2C)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3263c6a2f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 1MHz
Kind of package: reel; tape
Memory: 4kb FRAM
Produkt ist nicht verfügbar
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CY15B004J-SXE INFINEON TECHNOLOGIES Infineon-CY15B004J_4_KBIT_(512_X_8)_SERIAL_(I2C)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee394036a67&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Case: SOIC8
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 3.4MHz
Memory: 4kb FRAM
Produkt ist nicht verfügbar
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CY15B004J-SXET INFINEON TECHNOLOGIES Infineon-CY15B004J_4_KBIT_(512_X_8)_SERIAL_(I2C)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee394036a67&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Case: SOIC8
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 3.4MHz
Kind of package: reel; tape
Memory: 4kb FRAM
Produkt ist nicht verfügbar
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CY15B004Q-SXET INFINEON TECHNOLOGIES CY15B004Q_RevC_6-4-19.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Case: SOIC8
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 16MHz
Kind of package: reel; tape
Memory: 4kb FRAM
Produkt ist nicht verfügbar
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ICE5QR2280AZXKLA1
+1
 		ICE5QR2280AZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE99492CD9B7C85D8BF&compId=ICE5QRxxxxAx.pdf?ci_sign=396f75f590acef529cc8d5ba1e6e2424b54e0124 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 400mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80%
Operating temperature: -40...150°C
Case: DIP7
Power: 41/22W
Operating voltage: 10...25.5V DC
Frequency: 20kHz
Breakdown voltage: 800V
Output current: 0.4A
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Input voltage: 80...265V
Duty cycle factor: 0...80%
Kind of integrated circuit: PWM controller
Topology: flyback
Mounting: THT
Produkt ist nicht verfügbar
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BTS500101TAEATMA1
+1
 		BTS500101TAEATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE995D9856FE6F5F8BF&compId=BTS500101TAE.pdf?ci_sign=5d0a2bebb22f6dcba9d96688de2a190e13c6a6f8 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 40A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 40A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-10
On-state resistance: 1.6mΩ
Supply voltage: 8...18V DC
Technology: Power PROFET
Produkt ist nicht verfügbar
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BTS50085-1TMA BTS50085-1TMA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586988A710BC62469&compId=BTS50085-1TMA.pdf?ci_sign=75945b08cb5cb70d233c56683d743ba7b1f0d4d8 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Case: PG-TO220-7-4
Supply voltage: 5...58V DC
On-state resistance: 7.2mΩ
Output current: 38A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: SMD
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.91 EUR
11+6.86 EUR
12+6.48 EUR
500+6.23 EUR
Mindestbestellmenge: 7
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BFR181E6327HTSA1 BFR181E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998A313F6F3849820&compId=BFR181.pdf?ci_sign=38a950279fd876c36adcfab0661237d340b91310 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT23
Type of transistor: NPN
Case: SOT23
Frequency: 8GHz
Collector-emitter voltage: 12V
Current gain: 70...140
Collector current: 20mA
Power dissipation: 0.175W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
auf Bestellung 1455 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
186+0.38 EUR
240+0.3 EUR
358+0.2 EUR
544+0.13 EUR
575+0.12 EUR
Mindestbestellmenge: 132
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CY7C1383KVE33-133AXI INFINEON TECHNOLOGIES Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
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IRFR13N20DTRPBF IRFR13N20DTRPBF INFINEON TECHNOLOGIES irfr13n20dpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS4007WH6327XTSA1 BAS4007WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT343
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Max. forward impulse current: 0.2A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
285+0.25 EUR
343+0.21 EUR
516+0.14 EUR
595+0.12 EUR
839+0.085 EUR
887+0.081 EUR
3000+0.08 EUR
Mindestbestellmenge: 193
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IRLR3915TRPBF IRLR3915TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF127303F0515EA&compId=IRLR3915TRPBF.pdf?ci_sign=2a546e3321d7785d96f1b8df8cb817a035b9b316 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 61A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BSC0503NSIATMA1 BSC0503NSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2F97603E5E11C&compId=BSC0503NSI-DTE.pdf?ci_sign=a6a74026fb5f694d37118891f31071200b7efebf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BA885E6327 BA885E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999BC51ABD17E27&compId=BAx95-DTE.pdf?ci_sign=2fc9f1d8e133c7a4c3202608515580a89c97324a Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Mounting: SMD
Capacitance: 0.19...0.45pF
Semiconductor structure: single diode
Leakage current: 20nA
auf Bestellung 1233 Stücke:
Lieferzeit 14-21 Tag (e)
1064+0.067 EUR
1087+0.066 EUR
Mindestbestellmenge: 1064
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BSC109N10NS3GATMA1 BSC109N10NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D950ECCBD011C&compId=BSC109N10NS3G-DTE.pdf?ci_sign=73b03e08e383856ad99c6b662e0bfa1e3d0a5de9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH7084TRPBF IRFH7084TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCB7F1D55815EA&compId=IRFH7084TRPBF.pdf?ci_sign=4088043b4ac252e329b7fa435263384b9d251a79 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS7005WH6327XTSA1 BAS7005WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.1A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
376+0.19 EUR
472+0.15 EUR
570+0.13 EUR
686+0.1 EUR
1247+0.057 EUR
1316+0.054 EUR
Mindestbestellmenge: 278
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IRF3805PBF IRF3805PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7ADAF1A6F5005056AB5A8F&compId=irf3805.pdf?ci_sign=b1f89a3f622ec38eb379399dfb2e700a67186d8d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 0.19µC
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.78 EUR
32+2.29 EUR
34+2.16 EUR
Mindestbestellmenge: 15
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IRF3805STRL-7PP IRF3805STRL-7PP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F628A62DE73F1A303005056AB0C4F&compId=irf3805s-7ppbf.pdf?ci_sign=c4df994e7b162fcc0e0cfd81692e30268d46ac41 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 240A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRF3610STRLPBF IRF3610STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBDBA92288AC143&compId=IRF3610STRLPBF.pdf?ci_sign=95fdba56d7c40ac1aecdbfbb4c03f02b5478e3e1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 333W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 0.1µC
Produkt ist nicht verfügbar
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TLE7258SJXUMA1 TLE7258SJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE797AE5052B3AFC748&compId=TLE7258.pdf?ci_sign=fb47dd87523959ba8ff4c5c2ed4ff13300dd97c8 Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-DSO-8
DC supply current: 3mA
Supply voltage: 5.5...18V DC
Mounting: SMD
Interface: LIN
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
auf Bestellung 2416 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.2 EUR
70+1.03 EUR
111+0.65 EUR
117+0.61 EUR
1000+0.59 EUR
Mindestbestellmenge: 60
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TLD1120ELXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CD141BFF73C93D1&compId=TLD1120EL.pdf?ci_sign=96300b4bd44c785763f84797c1c0de64acd9edfd
TLD1120ELXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA
Operating voltage: 5.5...40V DC
Output current: 0.36A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: high-side; LED driver
Mounting: SMD
Case: PG-SSOP-14-EP
auf Bestellung 2352 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
81+0.89 EUR
94+0.76 EUR
100+0.72 EUR
102+0.71 EUR
250+0.69 EUR
Mindestbestellmenge: 59
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BTS723GW pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697CF8E11EA0469&compId=BTS723GW.pdf?ci_sign=8028509f6986f4e588434f8404d65e1c0adc8028
BTS723GW
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.9...4.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 53mΩ
Supply voltage: 7...58V DC
Technology: Classic PROFET
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.41 EUR
14+5.32 EUR
15+5.03 EUR
Mindestbestellmenge: 8
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IRS4427PBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA864536E4D93D7&compId=IRS4427PBF.pdf?ci_sign=18bc1ab6bdaf203e717df27cfa52960c5ee10db1
IRS4427PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -3.3...2.3A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 50ns
Produkt ist nicht verfügbar
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IRFH5301TRPBF pVersion=0046&contRep=ZT&docId=E221B71727F19FF1A303005056AB0C4F&compId=irfh5301pbf.pdf?ci_sign=69f6e6f9e392415bb914073c39b2b8b923255e3a
IRFH5301TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FZ600R12KE3HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B429DD0D2FC469&compId=FZ600R12KE3.pdf?ci_sign=868834a23490657b7f01821c752b76da3c7c6933
FZ600R12KE3HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 2.8kW
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Produkt ist nicht verfügbar
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FZ400R12KS4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDABBD2E6ABB71060C7&compId=FZ400R12KS4.pdf?ci_sign=38ee09c54c6e231e906f63e53875a0cb78b3b52e
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 2.5kW
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Produkt ist nicht verfügbar
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FF450R12KT4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869893D7BCFB4469&compId=FF450R12KT4.pdf?ci_sign=ae61a33310ba1063c05140bf85a5eae3ea9365d5
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Power dissipation: 2.4kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Produkt ist nicht verfügbar
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FF450R12KE4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ABF791B428A7DE27&compId=FF450R12KE4-DTE.pdf?ci_sign=ea990a008d4cd0a41ce5a30a9a09bff4050731f0
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 2.4kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Produkt ist nicht verfügbar
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FZ900R12KE4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B88F18F860860D5&compId=FZ900R12KE4.pdf?ci_sign=23fa0b5b27e80ccd677c32a3a61818263e8ce358
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MMES
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 4.3kW
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Produkt ist nicht verfügbar
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DF400R12KE3HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CDF8B8F122253D7&compId=DF400R12KE3.pdf?ci_sign=c0ee8fc01e207ac3de7635995e03cffedee02f43
DF400R12KE3HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 2kW
Topology: buck chopper
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Produkt ist nicht verfügbar
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FF200R12KE3HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FD6BFDD0F906745&compId=FF200R12KE3.pdf?ci_sign=f153117c762ff8f8b62ebc993737473163b2a468
FF200R12KE3HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 1.05kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+158.02 EUR
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TT260N22KOFHOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE7AC9E2082469&compId=TT260N22KOF.pdf?ci_sign=28d540274c7a6cf55effab82fa3567854f9dd7f9
TT260N22KOFHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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FF200R12KT3EHOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A398A572F53D7&compId=FF200R12KT3E.pdf?ci_sign=7d379c22644bc6b2701cdde2fb53b0018b9a5173
FF200R12KT3EHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Power dissipation: 1.05kW
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Produkt ist nicht verfügbar
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FF300R12KT3EHOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A6B34C2C213D7&compId=FF300R12KT3E.pdf?ci_sign=fd144bb2674acaa882bf1dd9f81d465f7011f7f3
FF300R12KT3EHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Power dissipation: 1.45kW
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Produkt ist nicht verfügbar
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FF200R12KE4PHOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A348FD319B3D7&compId=FF200R12KE4P.pdf?ci_sign=c3b8d527485471d02faae9add4b3248119e8cbfe
FF200R12KE4PHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Produkt ist nicht verfügbar
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FP100R12KT4B11BOSA1 Infineon-FP100R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a3043156fd57301161a6b3faf1e18
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W
Pulsed collector current: 200A
Power dissipation: 515W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-ECONO3-3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Produkt ist nicht verfügbar
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BTS724G pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBC9E5A998E90469&compId=BTS724G.pdf?ci_sign=fdbdc60cc29109e80227e1510eebe17cccc6aecd
BTS724G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Output current: 3.3...7.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 22.5mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Kind of integrated circuit: high-side
auf Bestellung 939 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.32 EUR
17+4.26 EUR
18+4.03 EUR
Mindestbestellmenge: 9
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BSC014N04LSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25D852524411C&compId=BSC014N04LSI-DTE.pdf?ci_sign=53868b51fbb5ec3ed88489a6d0c056d375046e73
BSC014N04LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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BSZ034N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DFBAB1A7CC11C&compId=BSZ034N04LS-DTE.pdf?ci_sign=f949cc7fd22e98717d29d2031c01c57f8fe57307
BSZ034N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 52W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF6216TRPBF irf6216pbf.pdf
IRF6216TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Drain-source voltage: -150V
Drain current: -2.2A
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Produkt ist nicht verfügbar
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IDW100E60FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA2820D32932469&compId=IDW100E60FKSA1.pdf?ci_sign=270dfcfc56663cc33471054f1c8a3589c99f451d
IDW100E60FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO247-3
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.45 EUR
29+2.46 EUR
Mindestbestellmenge: 14
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IRFSL7430PBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBF23C0F0390143&compId=IRFSL7430PBF.pdf?ci_sign=7f386f176a2cb5c5d006cc4f9534444664bf3296
IRFSL7430PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 301A; 375W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 301A
Power dissipation: 375W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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BCR141E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C592F4B4A0A469&compId=BCR141.pdf?ci_sign=6735c9f133de00805775cd3a1803dbbcf5242143
BCR141E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 130MHz
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 5139 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
228+0.31 EUR
371+0.19 EUR
439+0.16 EUR
637+0.11 EUR
1386+0.052 EUR
1467+0.049 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
IPP048N12N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC73EFFD0DC11C&compId=IPP048N12N3G-DTE.pdf?ci_sign=ffecbc2563f0f7e1ca375968b8dceaabdd38fe7b
IPP048N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.88 EUR
27+2.67 EUR
29+2.53 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
BSC054N04NSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C30364D1F0C11C&compId=BSC054N04NSG-DTE.pdf?ci_sign=02f4a91d4cdbcf956c2d10d5c13def34fb97916e
BSC054N04NSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 81A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSB014N04LX3GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C1FF40A8D2011C&compId=BSB014N04LX3G-DTE.pdf?ci_sign=6832f0b7ea205274644da112008db3155abffb0c
BSB014N04LX3GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC014N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25A9939DDA11C&compId=BSC014N04LS-DTE.pdf?ci_sign=702ca4986b6c1f5e5d8f755d7d5c4d74798c8fd0
BSC014N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLTS6342TRPBF pVersion=0046&contRep=ZT&docId=E22282476BD4DAF1A303005056AB0C4F&compId=irlts6342pbf.pdf?ci_sign=e247a54c761d43482cdc3c03bb2b306196ea7d84
IRLTS6342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 30V
Drain current: 8.3A
auf Bestellung 613 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
162+0.44 EUR
194+0.37 EUR
224+0.32 EUR
253+0.28 EUR
268+0.27 EUR
275+0.26 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
DDB6U205N16LHOSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CC1972638CA0D5&compId=DDB6U205N16LHOSA1.pdf?ci_sign=6dffeb89eddb8bd4f1e60339664ff7deab328ac8
DDB6U205N16LHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 205A; screw
Case: AG-ISOPACK
Electrical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Leads: M5 screws
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.47V
Load current: 205A
Max. forward impulse current: 1.375kA
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+278.85 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ITS4141NHUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6DF8054C3B5EA&compId=ITS4141N.pdf?ci_sign=e124ff2bc030b4d051faaf0434cbcb829927b7f4
ITS4141NHUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Operating temperature: -30...85°C
Case: SOT223
Supply voltage: 12...45V DC
On-state resistance: 0.2Ω
Turn-on time: 150µs
Turn-off time: 0.1ms
Output current: 0.7A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 1.4W
Kind of package: reel; tape
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Mounting: SMD
auf Bestellung 2826 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.17 EUR
49+1.47 EUR
54+1.34 EUR
57+1.27 EUR
250+1.23 EUR
500+1.22 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
BTS3405G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E076C4E98469&compId=BTS3405G.pdf?ci_sign=8f9574202640d62b6b0b3043218a9c425ff98c55
BTS3405G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 350mA; Ch: 2; N-Channel; SMD; HITFET®
Type of integrated circuit: power switch
Output voltage: 10V
Output current: 0.35A
Case: PG-DSO-8-25
Mounting: SMD
Number of channels: 2
Technology: HITFET®
Kind of integrated circuit: low-side
On-state resistance: 0.35Ω
Kind of output: N-Channel
auf Bestellung 2209 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.92 EUR
39+1.87 EUR
47+1.54 EUR
49+1.47 EUR
100+1.42 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
BAT1704E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFF73F55472469&compId=BAT1704E6327HTSA1.pdf?ci_sign=ec65d261eef5013a28cd9465ec3a7878d859e4c0
BAT1704E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Power dissipation: 0.15W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS83PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928D6EDF37B1CC&compId=BSS83PH6327XTSA1-dte.pdf?ci_sign=af6b6a3bc6b9093bad4b1410edb90e4f35d69241
BSS83PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
240+0.3 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
BSZ105N04NSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8D887E788EC143&compId=BSZ105N04NSG.pdf?ci_sign=f7af05d5643b125769d0c3f54426bbc9fc8e81a5
BSZ105N04NSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 29A
Power dissipation: 35W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 13nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR112E6327HTSA1 bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0
BCR112E6327HTSA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 5583 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
447+0.16 EUR
680+0.11 EUR
920+0.078 EUR
1441+0.05 EUR
1454+0.049 EUR
1539+0.046 EUR
3000+0.045 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
BCR148E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C58B4B5D02A469&compId=BCR148.pdf?ci_sign=e97eb104b0c53699eb1c27d2f3eeba910076f276
BCR148E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 7165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
731+0.098 EUR
812+0.088 EUR
1060+0.067 EUR
1122+0.064 EUR
3000+0.063 EUR
Mindestbestellmenge: 731
Im Einkaufswagen  Stück im Wert von  UAH
BCR185E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C579BD09108469&compId=BCR185.pdf?ci_sign=8b5a427d7e89c96143962f50eb7401ae7f4fadba
BCR185E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
913+0.078 EUR
1017+0.07 EUR
1150+0.062 EUR
1327+0.054 EUR
1405+0.051 EUR
Mindestbestellmenge: 913
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024ZTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCE3F07F0275EA&compId=IRFL024ZTRPBF.pdf?ci_sign=8c23d246f7a2ed4b15ce6df643c8a84d048dd9c2
IRFL024ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY15B004J-SXA Infineon-CY15B004J_4-Kbit_(512_x_8)_Serial_(I2C)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3263c6a2f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 1MHz
Memory: 4kb FRAM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY15B004J-SXAT Infineon-CY15B004J_4-Kbit_(512_x_8)_Serial_(I2C)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3263c6a2f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 1MHz
Kind of package: reel; tape
Memory: 4kb FRAM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY15B004J-SXE Infineon-CY15B004J_4_KBIT_(512_X_8)_SERIAL_(I2C)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee394036a67&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Case: SOIC8
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 3.4MHz
Memory: 4kb FRAM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY15B004J-SXET Infineon-CY15B004J_4_KBIT_(512_X_8)_SERIAL_(I2C)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee394036a67&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Case: SOIC8
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 3.4MHz
Kind of package: reel; tape
Memory: 4kb FRAM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY15B004Q-SXET CY15B004Q_RevC_6-4-19.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Case: SOIC8
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 16MHz
Kind of package: reel; tape
Memory: 4kb FRAM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE5QR2280AZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE99492CD9B7C85D8BF&compId=ICE5QRxxxxAx.pdf?ci_sign=396f75f590acef529cc8d5ba1e6e2424b54e0124
ICE5QR2280AZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 400mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80%
Operating temperature: -40...150°C
Case: DIP7
Power: 41/22W
Operating voltage: 10...25.5V DC
Frequency: 20kHz
Breakdown voltage: 800V
Output current: 0.4A
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Input voltage: 80...265V
Duty cycle factor: 0...80%
Kind of integrated circuit: PWM controller
Topology: flyback
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS500101TAEATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995D9856FE6F5F8BF&compId=BTS500101TAE.pdf?ci_sign=5d0a2bebb22f6dcba9d96688de2a190e13c6a6f8
BTS500101TAEATMA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 40A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 40A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-10
On-state resistance: 1.6mΩ
Supply voltage: 8...18V DC
Technology: Power PROFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS50085-1TMA pVersion=0046&contRep=ZT&docId=005056AB752F1EE586988A710BC62469&compId=BTS50085-1TMA.pdf?ci_sign=75945b08cb5cb70d233c56683d743ba7b1f0d4d8
BTS50085-1TMA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Case: PG-TO220-7-4
Supply voltage: 5...58V DC
On-state resistance: 7.2mΩ
Output current: 38A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: SMD
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.91 EUR
11+6.86 EUR
12+6.48 EUR
500+6.23 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
BFR181E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998A313F6F3849820&compId=BFR181.pdf?ci_sign=38a950279fd876c36adcfab0661237d340b91310
BFR181E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT23
Type of transistor: NPN
Case: SOT23
Frequency: 8GHz
Collector-emitter voltage: 12V
Current gain: 70...140
Collector current: 20mA
Power dissipation: 0.175W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
auf Bestellung 1455 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
186+0.38 EUR
240+0.3 EUR
358+0.2 EUR
544+0.13 EUR
575+0.12 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1383KVE33-133AXI Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
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IRFR13N20DTRPBF irfr13n20dpbf.pdf
IRFR13N20DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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BAS4007WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05
BAS4007WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT343
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Max. forward impulse current: 0.2A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
285+0.25 EUR
343+0.21 EUR
516+0.14 EUR
595+0.12 EUR
839+0.085 EUR
887+0.081 EUR
3000+0.08 EUR
Mindestbestellmenge: 193
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IRLR3915TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF127303F0515EA&compId=IRLR3915TRPBF.pdf?ci_sign=2a546e3321d7785d96f1b8df8cb817a035b9b316
IRLR3915TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 61A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BSC0503NSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2F97603E5E11C&compId=BSC0503NSI-DTE.pdf?ci_sign=a6a74026fb5f694d37118891f31071200b7efebf
BSC0503NSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BA885E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999BC51ABD17E27&compId=BAx95-DTE.pdf?ci_sign=2fc9f1d8e133c7a4c3202608515580a89c97324a
BA885E6327
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Mounting: SMD
Capacitance: 0.19...0.45pF
Semiconductor structure: single diode
Leakage current: 20nA
auf Bestellung 1233 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1064+0.067 EUR
1087+0.066 EUR
Mindestbestellmenge: 1064
Im Einkaufswagen  Stück im Wert von  UAH
BSC109N10NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D950ECCBD011C&compId=BSC109N10NS3G-DTE.pdf?ci_sign=73b03e08e383856ad99c6b662e0bfa1e3d0a5de9
BSC109N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH7084TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCB7F1D55815EA&compId=IRFH7084TRPBF.pdf?ci_sign=4088043b4ac252e329b7fa435263384b9d251a79
IRFH7084TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS7005WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0
BAS7005WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.1A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
376+0.19 EUR
472+0.15 EUR
570+0.13 EUR
686+0.1 EUR
1247+0.057 EUR
1316+0.054 EUR
Mindestbestellmenge: 278
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IRF3805PBF pVersion=0046&contRep=ZT&docId=E1C04E40FB7ADAF1A6F5005056AB5A8F&compId=irf3805.pdf?ci_sign=b1f89a3f622ec38eb379399dfb2e700a67186d8d
IRF3805PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 0.19µC
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.78 EUR
32+2.29 EUR
34+2.16 EUR
Mindestbestellmenge: 15
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IRF3805STRL-7PP pVersion=0046&contRep=ZT&docId=E21F628A62DE73F1A303005056AB0C4F&compId=irf3805s-7ppbf.pdf?ci_sign=c4df994e7b162fcc0e0cfd81692e30268d46ac41
IRF3805STRL-7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 240A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRF3610STRLPBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBDBA92288AC143&compId=IRF3610STRLPBF.pdf?ci_sign=95fdba56d7c40ac1aecdbfbb4c03f02b5478e3e1
IRF3610STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 333W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 0.1µC
Produkt ist nicht verfügbar
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TLE7258SJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797AE5052B3AFC748&compId=TLE7258.pdf?ci_sign=fb47dd87523959ba8ff4c5c2ed4ff13300dd97c8
TLE7258SJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-DSO-8
DC supply current: 3mA
Supply voltage: 5.5...18V DC
Mounting: SMD
Interface: LIN
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
auf Bestellung 2416 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
70+1.03 EUR
111+0.65 EUR
117+0.61 EUR
1000+0.59 EUR
Mindestbestellmenge: 60
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