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IRFS7430TRLPBF INFINEON TECHNOLOGIES Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 426A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS7430TRL7PP IRFS7430TRL7PP INFINEON TECHNOLOGIES IRFS7430TRL7PP.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.55mΩ
Power dissipation: 375W
Gate charge: 305nC
Technology: HEXFET®
Produkt ist nicht verfügbar
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BSP772T BSP772T INFINEON TECHNOLOGIES BSP772T.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Technology: Classic PROFET
Supply voltage: 5...34V DC
auf Bestellung 1716 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.53 EUR
32+2.25 EUR
34+2.12 EUR
500+2.04 EUR
Mindestbestellmenge: 16
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BSP77E6433 BSP77E6433 INFINEON TECHNOLOGIES BSP77E6433.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 3753 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.23 EUR
35+2.09 EUR
62+1.16 EUR
65+1.10 EUR
2000+1.06 EUR
Mindestbestellmenge: 23
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IRFU13N20DPBF IRFU13N20DPBF INFINEON TECHNOLOGIES irfr13n20dpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3504ZTRPBF IRFR3504ZTRPBF INFINEON TECHNOLOGIES IRFR3504ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AUIRFR3504Z AUIRFR3504Z INFINEON TECHNOLOGIES auirfr3504.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate charge: 30nC
On-state resistance: 9mΩ
Gate-source voltage: ±20V
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BSS670S2LH6327XTSA1 BSS670S2LH6327XTSA1 INFINEON TECHNOLOGIES BSS670S2LH6327XTSA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Type of transistor: N-MOSFET
Case: SOT23
Drain-source voltage: 55V
Drain current: 0.54A
On-state resistance: 0.65Ω
Mounting: SMD
Power dissipation: 0.36W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2032 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
363+0.20 EUR
506+0.14 EUR
587+0.12 EUR
1038+0.07 EUR
1097+0.07 EUR
1500+0.06 EUR
Mindestbestellmenge: 228
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BSS670S2LH6433XTMA1 INFINEON TECHNOLOGIES BSS670S2L_Rev2.6.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f68606013109e4a7fb0094 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.06 EUR
Mindestbestellmenge: 10000
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1EDC10I12MHXUMA1 1EDC10I12MHXUMA1 INFINEON TECHNOLOGIES 1EDCxxI12MH.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Output current: -1...1A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Mounting: SMD
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...18V
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.93 EUR
21+3.53 EUR
22+3.40 EUR
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BSP89H6327XTSA1 BSP89H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A76F50D5BC510B&compId=BSP89H6327XTSA1.pdf?ci_sign=7971c84e5dd572ba81dd29f18b275092ee4394af Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Drain-source voltage: 240V
Drain current: 0.35A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
143+0.50 EUR
168+0.43 EUR
197+0.36 EUR
208+0.34 EUR
Mindestbestellmenge: 105
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PVT322ASPBF INFINEON TECHNOLOGIES IRSD-S-A0001022139-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
50+14.11 EUR
Mindestbestellmenge: 50
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PVT322S-TPBF INFINEON TECHNOLOGIES INFN-S-A0002782763-1.pdf?t.download=true&u=5oefqw pvt322.pdf?fileId=5546d462533600a40153568427eb2965 Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
750+11.30 EUR
Mindestbestellmenge: 750
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IRF3805STRLPBF INFINEON TECHNOLOGIES irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
800+1.52 EUR
Mindestbestellmenge: 800
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IRFB3077PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFB3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356153f0d1def Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA65R125C7XKSA1 IPA65R125C7XKSA1 INFINEON TECHNOLOGIES IPA65R125C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R125C7XKSA1 IPP65R125C7XKSA1 INFINEON TECHNOLOGIES IPP65R125C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSL296SNH6327XTSA1 BSL296SNH6327XTSA1 INFINEON TECHNOLOGIES BSL296SNH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; 2W; TSOP6; ESD
Mounting: SMD
Case: TSOP6
Drain current: 1.4A
Version: ESD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Polarisation: unipolar
On-state resistance: 0.56Ω
Drain-source voltage: 100V
Power dissipation: 2W
Produkt ist nicht verfügbar
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BCR22PNH6327XTSA1 INFINEON TECHNOLOGIES bcr22pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406a036a02fe Category: Complementary transistors
Description: Transistor: NPN / PNP
Type of transistor: NPN / PNP
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.09 EUR
Mindestbestellmenge: 3000
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IRFB3306PBF IRFB3306PBF INFINEON TECHNOLOGIES irfs3306pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1690 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.86 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 25
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IRS2302SPBF IRS2302SPBF INFINEON TECHNOLOGIES IRS2302SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 650ns
Turn-off time: 200ns
Produkt ist nicht verfügbar
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DD180N22SHPSA1 INFINEON TECHNOLOGIES DD180N22S.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 226A; BG-PB34SB-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 226A
Case: BG-PB34SB-1
Max. forward voltage: 1.39V
Max. forward impulse current: 5.75kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPP80R1K2P7XKSA1 IPP80R1K2P7XKSA1 INFINEON TECHNOLOGIES IPP80R1K2P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 335 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.94 EUR
45+1.62 EUR
51+1.42 EUR
54+1.34 EUR
150+1.33 EUR
200+1.32 EUR
Mindestbestellmenge: 37
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IPU80R1K2P7AKMA1 IPU80R1K2P7AKMA1 INFINEON TECHNOLOGIES IPU80R1K2P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
86+0.84 EUR
96+0.75 EUR
110+0.65 EUR
117+0.62 EUR
Mindestbestellmenge: 76
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IPD80R1K2P7ATMA1 IPD80R1K2P7ATMA1 INFINEON TECHNOLOGIES IPD80R1K2P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Version: ESD
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1EDC60I12AHXUMA1 1EDC60I12AHXUMA1 INFINEON TECHNOLOGIES 1EDCxxX12AH.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Output current: -6...6A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Case: PG-DSO-8
auf Bestellung 664 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.52 EUR
23+3.12 EUR
24+3.02 EUR
25+2.92 EUR
Mindestbestellmenge: 21
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1EDC20H12AHXUMA1 1EDC20H12AHXUMA1 INFINEON TECHNOLOGIES 1EDCxxX12AH.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Output current: -2...2A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Case: PG-DSO-8
Produkt ist nicht verfügbar
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1EDC60H12AHXUMA1 1EDC60H12AHXUMA1 INFINEON TECHNOLOGIES 1EDCxxX12AH.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Output current: -6...6A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Case: PG-DSO-8
Produkt ist nicht verfügbar
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IPP60R299CPXKSA1 IPP60R299CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594497E2285B1BF&compId=IPP60R299CP-DTE.pdf?ci_sign=0aa6e8461138adc0224ff0880d043028a0164f7f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 96W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB320N20N3GATMA1 IPB320N20N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBBF0FB2C1C11C&compId=IPB320N20N3G-DTE.pdf?ci_sign=63968efc315030711006a495abbba2f99ce658c8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 34A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7103TRPBFXTMA1 INFINEON TECHNOLOGIES irf7103pbf.pdf?fileId=5546d462533600a4015355f0f0141ac6 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.26 EUR
Mindestbestellmenge: 4000
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DD600N16KHPSA1 DD600N16KHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9F08533614469&compId=DD600N18K.pdf?ci_sign=f10963049ff88079e530079ed9b25fbb721c5e8a Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 600A; BG-PB60AT-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB60AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DD600N18KHPSA1 DD600N18KHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9F08533614469&compId=DD600N18K.pdf?ci_sign=f10963049ff88079e530079ed9b25fbb721c5e8a Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 600A; BG-PB60AT-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 600A
Case: BG-PB60AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BTS5030-2EKA BTS5030-2EKA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE4F48132938259&compId=BTS5030-2EKA.pdf?ci_sign=33e059d647c96a6ae9b9d65e9205d4cc4a8f0d7c Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; PG-DSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14
On-state resistance: 60mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Power dissipation: 2.1W
Produkt ist nicht verfügbar
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BTS5016-2EKA BTS5016-2EKA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986CDEB37B6469&compId=BTS5016-2EKA.pdf?ci_sign=83c8bc9d42f43a784bc704bee2630f9102c3dd63 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 28mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Produkt ist nicht verfügbar
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BTS50451EJAXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE5172C044FE259&compId=BTS5045-1EJA.pdf?ci_sign=9030c87778744422a27802869fa8150b02464e74 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-8-EP
On-state resistance: 45mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Operating temperature: -40...150°C
Power dissipation: 1.6W
Produkt ist nicht verfügbar
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BTS50452EKAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS5045-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa4113e5d1075 Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.49 EUR
Mindestbestellmenge: 2500
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BTS500101TADATMA2 INFINEON TECHNOLOGIES BTS50010-1TA_rev1.2_12-5-17.pdf Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+5.38 EUR
Mindestbestellmenge: 1000
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BTS500151TADATMA2 INFINEON TECHNOLOGIES Infineon-BTS50015-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36c510460f Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+4.80 EUR
Mindestbestellmenge: 1000
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BTS50121EKBXUMA1 INFINEON TECHNOLOGIES Infineon-BTS5012-1EKB-DS-v02_00-EN.pdf?fileId=5546d4625a888733015aa42c52d5113a Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.86 EUR
Mindestbestellmenge: 2500
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BTS50201EKAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS5020-1EKA-DS-v02_02-EN.pdf?fileId=5546d46259d9a4bf015a84fd1c7575cc Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.52 EUR
Mindestbestellmenge: 2500
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IPI180N10N3GXKSA1 IPI180N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAF649593FC11C&compId=IPI180N10N3G-DTE.pdf?ci_sign=bdd5ad7ac5aa3556edd4940f3d6af7743d74344f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.60 EUR
52+1.39 EUR
74+0.97 EUR
77+0.93 EUR
Mindestbestellmenge: 45
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IPP180N10N3GXKSA1 IPP180N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBA9C0C681411C&compId=IPP180N10N3G-dte.pdf?ci_sign=701544aaf512046aa829ae971b208ce0aa5ac872 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IAUA180N10S5N029AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB180N10S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPB180N10S4_02-DS-v01_00-en.pdf?fileId=db3a30433d1d0bbe013d2129cf8a2f88 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+4.05 EUR
Mindestbestellmenge: 1000
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IRG4RC10KDTRPBF IRG4RC10KDTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEFAA8ACB0415EA&compId=IRG4RC10KDTRPBF.pdf?ci_sign=2087d15123c50192bd1e99a508f775700674dc79 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IR38265MTRPBFAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE8959CE622808BB3D5&compId=IR38265M.pdf?ci_sign=1dbb08e49f01815b39ec04109f1da92968a5f623 Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Operating temperature: -40...125°C
Case: PQFN5X7
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: I2C; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: POL converter
Mounting: SMD
Produkt ist nicht verfügbar
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CY62136ESL-45ZSXI INFINEON TECHNOLOGIES Infineon-CY62136ESL_MoBL(R)_2-Mbit_(128_K_X_16)_Static_RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeeecb32e8 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC
Kind of package: in-tray
Produkt ist nicht verfügbar
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CY62138FLL-45SXI INFINEON TECHNOLOGIES Infineon-CY62138F_MOBL_2_MBIT_(256K_X_8)_STATIC_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9f27325d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Produkt ist nicht verfügbar
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CY62138FLL-45SXIT INFINEON TECHNOLOGIES Infineon-CY62138F_MOBL_2_MBIT_(256K_X_8)_STATIC_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9f27325d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY62146ELL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62146E_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea9213270 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY62146ESL-45ZSXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC
Kind of package: in-tray
Produkt ist nicht verfügbar
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CY62146G30-45BVXIT INFINEON TECHNOLOGIES Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY62146G30-45ZSXI INFINEON TECHNOLOGIES Infineon-CY62146G_CY62146GE_CY62146GSL_CY62146GESL_MoBL_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed92ff45ad1&utm_source=cypress&utm_medium=referral&u Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Kind of package: in-tray
Produkt ist nicht verfügbar
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CY62147G-45ZSXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY62147G30-45B2XI INFINEON TECHNOLOGIES Infineon-CY62147G_CY621472G_CY62147GE_MoBL_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecde615486b&utm_source=cypress&utm_medium=referral&utm_camp Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Kind of package: in-tray
Produkt ist nicht verfügbar
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BSS308PEH6327XTSA1 BSS308PEH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928895033F11CC&compId=BSS308PEH6327XTSA1-DTE.pdf?ci_sign=2bf63919c5470e9e78796983318a7cd255dfb425 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 0.5W
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.52 EUR
166+0.43 EUR
239+0.30 EUR
278+0.26 EUR
725+0.10 EUR
770+0.09 EUR
Mindestbestellmenge: 139
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BSL308PEH6327XTSA1 BSL308PEH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA913D1D61B311CC&compId=BSL308PEH6327XTSA1-DTE.pdf?ci_sign=2926dcc98cc2f16e4e3030d97715eb942d9c5794 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6; ESD
Type of transistor: P-MOSFET x2
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Power dissipation: 0.5W
auf Bestellung 1996 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
136+0.53 EUR
152+0.47 EUR
224+0.32 EUR
237+0.30 EUR
500+0.29 EUR
Mindestbestellmenge: 105
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BSS314PEH6327XTSA1 BSS314PEH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928A4924BFF1CC&compId=BSS314PEH6327XTSA1-dte.pdf?ci_sign=baff2f0168140fd475d707cb4164bca628a06e7f Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 0.5W
auf Bestellung 3024 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
304+0.24 EUR
426+0.17 EUR
497+0.14 EUR
910+0.08 EUR
962+0.07 EUR
2500+0.07 EUR
Mindestbestellmenge: 200
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IRFS7430TRLPBF Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 426A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS7430TRL7PP IRFS7430TRL7PP.pdf
IRFS7430TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.55mΩ
Power dissipation: 375W
Gate charge: 305nC
Technology: HEXFET®
Produkt ist nicht verfügbar
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BSP772T BSP772T.pdf
BSP772T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Technology: Classic PROFET
Supply voltage: 5...34V DC
auf Bestellung 1716 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.53 EUR
32+2.25 EUR
34+2.12 EUR
500+2.04 EUR
Mindestbestellmenge: 16
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BSP77E6433 BSP77E6433.pdf
BSP77E6433
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 3753 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.23 EUR
35+2.09 EUR
62+1.16 EUR
65+1.10 EUR
2000+1.06 EUR
Mindestbestellmenge: 23
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IRFU13N20DPBF irfr13n20dpbf.pdf
IRFU13N20DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3504ZTRPBF IRFR3504ZTRPBF.pdf
IRFR3504ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRFR3504Z auirfr3504.pdf
AUIRFR3504Z
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate charge: 30nC
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BSS670S2LH6327XTSA1 BSS670S2LH6327XTSA.pdf
BSS670S2LH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Type of transistor: N-MOSFET
Case: SOT23
Drain-source voltage: 55V
Drain current: 0.54A
On-state resistance: 0.65Ω
Mounting: SMD
Power dissipation: 0.36W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2032 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
363+0.20 EUR
506+0.14 EUR
587+0.12 EUR
1038+0.07 EUR
1097+0.07 EUR
1500+0.06 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
BSS670S2LH6433XTMA1 BSS670S2L_Rev2.6.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f68606013109e4a7fb0094
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.06 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
1EDC10I12MHXUMA1 1EDCxxI12MH.pdf
1EDC10I12MHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Output current: -1...1A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Mounting: SMD
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...18V
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
21+3.53 EUR
22+3.40 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
BSP89H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A76F50D5BC510B&compId=BSP89H6327XTSA1.pdf?ci_sign=7971c84e5dd572ba81dd29f18b275092ee4394af
BSP89H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Drain-source voltage: 240V
Drain current: 0.35A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
143+0.50 EUR
168+0.43 EUR
197+0.36 EUR
208+0.34 EUR
Mindestbestellmenge: 105
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PVT322ASPBF IRSD-S-A0001022139-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+14.11 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
PVT322S-TPBF INFN-S-A0002782763-1.pdf?t.download=true&u=5oefqw pvt322.pdf?fileId=5546d462533600a40153568427eb2965
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
750+11.30 EUR
Mindestbestellmenge: 750
Im Einkaufswagen  Stück im Wert von  UAH
IRF3805STRLPBF irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+1.52 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3077PBFXKMA1 Infineon-IRFB3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356153f0d1def
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA65R125C7XKSA1 IPA65R125C7-DTE.pdf
IPA65R125C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R125C7XKSA1 IPP65R125C7-DTE.pdf
IPP65R125C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSL296SNH6327XTSA1 BSL296SNH6327XTSA1.pdf
BSL296SNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; 2W; TSOP6; ESD
Mounting: SMD
Case: TSOP6
Drain current: 1.4A
Version: ESD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Polarisation: unipolar
On-state resistance: 0.56Ω
Drain-source voltage: 100V
Power dissipation: 2W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR22PNH6327XTSA1 bcr22pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406a036a02fe
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP
Type of transistor: NPN / PNP
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.09 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3306PBF irfs3306pbf.pdf
IRFB3306PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1690 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IRS2302SPBF IRS2302SPBF.pdf
IRS2302SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 650ns
Turn-off time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD180N22SHPSA1 DD180N22S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 226A; BG-PB34SB-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 226A
Case: BG-PB34SB-1
Max. forward voltage: 1.39V
Max. forward impulse current: 5.75kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP80R1K2P7XKSA1 IPP80R1K2P7.pdf
IPP80R1K2P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 335 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
45+1.62 EUR
51+1.42 EUR
54+1.34 EUR
150+1.33 EUR
200+1.32 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
IPU80R1K2P7AKMA1 IPU80R1K2P7.pdf
IPU80R1K2P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
86+0.84 EUR
96+0.75 EUR
110+0.65 EUR
117+0.62 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R1K2P7ATMA1 IPD80R1K2P7.pdf
IPD80R1K2P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDC60I12AHXUMA1 1EDCxxX12AH.pdf
1EDC60I12AHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Output current: -6...6A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Case: PG-DSO-8
auf Bestellung 664 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.52 EUR
23+3.12 EUR
24+3.02 EUR
25+2.92 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
1EDC20H12AHXUMA1 1EDCxxX12AH.pdf
1EDC20H12AHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Output current: -2...2A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Case: PG-DSO-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDC60H12AHXUMA1 1EDCxxX12AH.pdf
1EDC60H12AHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Output current: -6...6A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Case: PG-DSO-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R299CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594497E2285B1BF&compId=IPP60R299CP-DTE.pdf?ci_sign=0aa6e8461138adc0224ff0880d043028a0164f7f
IPP60R299CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 96W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB320N20N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBBF0FB2C1C11C&compId=IPB320N20N3G-DTE.pdf?ci_sign=63968efc315030711006a495abbba2f99ce658c8
IPB320N20N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 34A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7103TRPBFXTMA1 irf7103pbf.pdf?fileId=5546d462533600a4015355f0f0141ac6
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.26 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
DD600N16KHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9F08533614469&compId=DD600N18K.pdf?ci_sign=f10963049ff88079e530079ed9b25fbb721c5e8a
DD600N16KHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 600A; BG-PB60AT-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB60AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD600N18KHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9F08533614469&compId=DD600N18K.pdf?ci_sign=f10963049ff88079e530079ed9b25fbb721c5e8a
DD600N18KHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 600A; BG-PB60AT-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 600A
Case: BG-PB60AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS5030-2EKA pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE4F48132938259&compId=BTS5030-2EKA.pdf?ci_sign=33e059d647c96a6ae9b9d65e9205d4cc4a8f0d7c
BTS5030-2EKA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; PG-DSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14
On-state resistance: 60mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Power dissipation: 2.1W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS5016-2EKA pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986CDEB37B6469&compId=BTS5016-2EKA.pdf?ci_sign=83c8bc9d42f43a784bc704bee2630f9102c3dd63
BTS5016-2EKA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 28mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS50451EJAXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE5172C044FE259&compId=BTS5045-1EJA.pdf?ci_sign=9030c87778744422a27802869fa8150b02464e74
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-8-EP
On-state resistance: 45mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Operating temperature: -40...150°C
Power dissipation: 1.6W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS50452EKAXUMA1 Infineon-BTS5045-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa4113e5d1075
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.49 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
BTS500101TADATMA2 BTS50010-1TA_rev1.2_12-5-17.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+5.38 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
BTS500151TADATMA2 Infineon-BTS50015-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36c510460f
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+4.80 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
BTS50121EKBXUMA1 Infineon-BTS5012-1EKB-DS-v02_00-EN.pdf?fileId=5546d4625a888733015aa42c52d5113a
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.86 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
BTS50201EKAXUMA1 Infineon-BTS5020-1EKA-DS-v02_02-EN.pdf?fileId=5546d46259d9a4bf015a84fd1c7575cc
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.52 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPI180N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAF649593FC11C&compId=IPI180N10N3G-DTE.pdf?ci_sign=bdd5ad7ac5aa3556edd4940f3d6af7743d74344f
IPI180N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.60 EUR
52+1.39 EUR
74+0.97 EUR
77+0.93 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
IPP180N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBA9C0C681411C&compId=IPP180N10N3G-dte.pdf?ci_sign=701544aaf512046aa829ae971b208ce0aa5ac872
IPP180N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IAUA180N10S5N029AUMA1 Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB180N10S402ATMA1 Infineon-IPB180N10S4_02-DS-v01_00-en.pdf?fileId=db3a30433d1d0bbe013d2129cf8a2f88
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+4.05 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IRG4RC10KDTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEFAA8ACB0415EA&compId=IRG4RC10KDTRPBF.pdf?ci_sign=2087d15123c50192bd1e99a508f775700674dc79
IRG4RC10KDTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IR38265MTRPBFAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE8959CE622808BB3D5&compId=IR38265M.pdf?ci_sign=1dbb08e49f01815b39ec04109f1da92968a5f623
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Operating temperature: -40...125°C
Case: PQFN5X7
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: I2C; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: POL converter
Mounting: SMD
Produkt ist nicht verfügbar
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CY62136ESL-45ZSXI Infineon-CY62136ESL_MoBL(R)_2-Mbit_(128_K_X_16)_Static_RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeeecb32e8
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62138FLL-45SXI Infineon-CY62138F_MOBL_2_MBIT_(256K_X_8)_STATIC_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9f27325d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62138FLL-45SXIT Infineon-CY62138F_MOBL_2_MBIT_(256K_X_8)_STATIC_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9f27325d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62146ELL-45ZSXIT Infineon-CY62146E_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea9213270
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62146ESL-45ZSXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62146G30-45BVXIT
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62146G30-45ZSXI Infineon-CY62146G_CY62146GE_CY62146GSL_CY62146GESL_MoBL_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed92ff45ad1&utm_source=cypress&utm_medium=referral&u
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62147G-45ZSXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62147G30-45B2XI Infineon-CY62147G_CY621472G_CY62147GE_MoBL_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecde615486b&utm_source=cypress&utm_medium=referral&utm_camp
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS308PEH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928895033F11CC&compId=BSS308PEH6327XTSA1-DTE.pdf?ci_sign=2bf63919c5470e9e78796983318a7cd255dfb425
BSS308PEH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 0.5W
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.52 EUR
166+0.43 EUR
239+0.30 EUR
278+0.26 EUR
725+0.10 EUR
770+0.09 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
BSL308PEH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA913D1D61B311CC&compId=BSL308PEH6327XTSA1-DTE.pdf?ci_sign=2926dcc98cc2f16e4e3030d97715eb942d9c5794
BSL308PEH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6; ESD
Type of transistor: P-MOSFET x2
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Power dissipation: 0.5W
auf Bestellung 1996 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
136+0.53 EUR
152+0.47 EUR
224+0.32 EUR
237+0.30 EUR
500+0.29 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
BSS314PEH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928A4924BFF1CC&compId=BSS314PEH6327XTSA1-dte.pdf?ci_sign=baff2f0168140fd475d707cb4164bca628a06e7f
BSS314PEH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 0.5W
auf Bestellung 3024 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
304+0.24 EUR
426+0.17 EUR
497+0.14 EUR
910+0.08 EUR
962+0.07 EUR
2500+0.07 EUR
Mindestbestellmenge: 200
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