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XMC4504F100K512ACXQMA1 XMC4504F100K512ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,512kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 128kB SRAM; 512kB FLASH
Kind of core: 32-bit
Case: PG-LQFP-100
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XMC4100Q48F128ABXUMA1 XMC4100Q48F128ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-VQFN-48
Family: XMC4100
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Memory: 20kB SRAM; 128kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
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XMC4104Q48F128ABXUMA1 XMC4104Q48F128ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-VQFN-48
Family: XMC4100
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Memory: 20kB SRAM; 128kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
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XMC4104Q48K128ABXUMA1 XMC4104Q48K128ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...125°C
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XMC4200Q48F256ABXUMA1 XMC4200Q48F256ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 40kBSRAM,256kBFLASH; 3.3VDC
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of core: 32-bit
Memory: 40kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4200
Operating temperature: -40...85°C
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XMC4300F100K256AAXQMA1 XMC4300F100K256AAXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20CE951CEEFA8&compId=XMC4300-DTE.pdf?ci_sign=4a33a095c027e0f144dd0ab2bd2044004e42c17e Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,256kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 14
Number of 16bit timers: 12
Number of inputs/outputs: 75
Kind of core: 32-bit
Memory: 128kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4300
Operating temperature: -40...125°C
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XMC4504F144F512ACXQMA1 XMC4504F144F512ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,512kBFLASH
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Interface: EBI; GPIO; I2C; I2S; LIN; SPI; UART; USB
Case: PG-LQFP-144
Family: XMC4500
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IRS25411STRPBF IRS25411STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222831E099A5DF1A303005056AB0C4F&compId=irs25401pbf.pdf?ci_sign=e254e61d544328852a104fbb88372e928f9b660a Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; SO8; -700÷500mA; Ch: 2
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED driver
Case: SO8
Output current: -700...500mA
Power: 625mW
Number of channels: 2
Supply voltage: 8...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 180ns
Produkt ist nicht verfügbar
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BGT24LTR11N16E6327XTSA1 BGT24LTR11N16E6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DD599DAD3C5E28&compId=BGT24LTR11.pdf?ci_sign=affc801d3381666d890169462b510c4449fcfc61 Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape
Case: TSNP16
Mounting: SMD
Kind of package: reel; tape
DC supply current: 45mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3.2...3.4V DC
Noise Figure: 10dB
Open-loop gain: 26dB
Frequency: 24...24.25GHz
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Operating temperature: -40...85°C
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IMZA65R048M1HXKSA1 IMZA65R048M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMZA65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d9ac090535 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
8+10.07 EUR
9+8.12 EUR
10+7.21 EUR
Mindestbestellmenge: 8
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IPD60R280P7S IPD60R280P7S INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E45A84CBF8C749&compId=IPD60R280P7S.pdf?ci_sign=1564dce193aafb1b5380bf961fddff3a8557bcbb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPD60R600P7ATMA1 IPD60R600P7ATMA1 INFINEON TECHNOLOGIES infineon-ipd60r600p7-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Gate charge: 9nC
On-state resistance: 0.6Ω
Drain current: 4A
Power dissipation: 30W
Pulsed drain current: 16A
Gate-source voltage: ±20V
Drain-source voltage: 600V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: PG-TO252-3
Type of transistor: N-MOSFET
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IPD60R170CFD7 IPD60R170CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7255599D874A&compId=IPD60R170CFD7.pdf?ci_sign=87050184a9d4b4583b02a8c4dcb529f39bd56eee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 76W; PG-TO252-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
Gate charge: 28nC
On-state resistance: 0.325Ω
Drain current: 9A
Power dissipation: 76W
Gate-source voltage: ±20V
Technology: OptiMOS™
Drain-source voltage: 600V
Case: PG-TO252-3
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IPD60R1K0PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed6256d5839ef Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 3A; Idm: 8.8A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 1.978Ω
Drain current: 3A
Pulsed drain current: 8.8A
Power dissipation: 26W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
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IPD60R1K5PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R1K5PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e225df2d46744 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 2.2A; Idm: 6A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 2.892Ω
Drain current: 2.2A
Pulsed drain current: 6A
Power dissipation: 22W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
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IPD60R2K0C6ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R2K0C6-DS-v02_01-EN.pdf?fileId=db3a304329a0f6ee012a0dfc6b8b064f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.5A; Idm: 6A; 22.3W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 2Ω
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 22.3W
Gate-source voltage: ±20V
Technology: CoolMOS™ C6
Drain-source voltage: 600V
Case: PG-TO252
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IPD60R2K0PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e226704e76747 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 1.9A; 20W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 3.824Ω
Drain current: 1.9A
Pulsed drain current: 4.5A
Power dissipation: 20W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
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IPD60R380C6ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R380C6-DS-v02_02-EN.pdf?fileId=db3a30433ecb86d4013ed661f42d23f2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; Idm: 30A; 83W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.38Ω
Drain current: 6.7A
Pulsed drain current: 30A
Power dissipation: 83W
Gate-source voltage: ±20V
Technology: CoolMOS™ C6
Drain-source voltage: 600V
Case: PG-TO252
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IPD60R385CPATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R385CP-DS-v02_04-EN.pdf?fileId=db3a30432313ff5e012385595fd16763 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.385Ω
Drain current: 5.7A
Pulsed drain current: 27A
Power dissipation: 83W
Gate-source voltage: ±20V
Technology: CoolMOS™ CP
Drain-source voltage: 600V
Case: PG-TO252
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IPD60R3K3C6ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R3K3C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129f96874465b3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 3.3Ω
Drain current: 1.1A
Pulsed drain current: 4A
Power dissipation: 18.1W
Gate-source voltage: ±20V
Technology: CoolMOS™ C6
Drain-source voltage: 600V
Case: PG-TO252
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IPD60R400CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R400CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c83667001f0c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.4Ω
Drain current: 9.3A
Pulsed drain current: 30A
Power dissipation: 112W
Gate-source voltage: ±20V
Technology: CoolMOS™ CE
Drain-source voltage: 600V
Case: PG-TO252
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IPD60R600C6ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R600C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eef7f5937259b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 19A; 63W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.6Ω
Drain current: 4.6A
Pulsed drain current: 19A
Power dissipation: 63W
Gate-source voltage: ±20V
Technology: CoolMOS™ CE
Drain-source voltage: 600V
Case: PG-TO252
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IPD60R600PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed61c45f839e9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 4A; Idm: 14A
Case: PG-TO252-3
Mounting: SMD
Version: ESD
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 1.219Ω
Power dissipation: 31W
Drain current: 4A
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 14A
Drain-source voltage: 600V
Technology: CoolMOS™ PFD7
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IPD60R1K0CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R1K0CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7bf4c481e94 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 6.8A; 61W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Mounting: SMD
Electrical mounting: SMT
Gate charge: 13nC
On-state resistance: 1Ω
Drain current: 6.8A
Power dissipation: 61W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK; TO252
auf Bestellung 17500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.33 EUR
Mindestbestellmenge: 2500
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IPD60R2K1CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R2K1CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c7e404601eaa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 3.7A; 38W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 6.7nC
On-state resistance: 2.1Ω
Drain current: 3.7A
Power dissipation: 38W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.25 EUR
Mindestbestellmenge: 2500
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IPD60R180P7ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bd338b83cb3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.39 EUR
Mindestbestellmenge: 2500
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IPD60R1K5CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 5A; 49W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 9.4nC
On-state resistance: 1.5Ω
Drain current: 5A
Power dissipation: 49W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK; TO252
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.28 EUR
Mindestbestellmenge: 2500
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IPD60R380P6ATMA1 INFINEON TECHNOLOGIES Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10.6A; 83W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Mounting: SMD
Electrical mounting: SMT
Gate charge: 19nC
On-state resistance: 0.38Ω
Drain current: 10.6A
Power dissipation: 83W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.69 EUR
Mindestbestellmenge: 2500
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IPD60R3K4CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537fcd09123a87 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 2.6A; 29W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 4.6nC
On-state resistance: 3.17Ω
Drain current: 2.6A
Power dissipation: 29W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
auf Bestellung 40000 Stücke:
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2500+0.22 EUR
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IPD60R600P6ATMA1 INFINEON TECHNOLOGIES DS_IPx60R600P6_2_1.pdf?fileId=db3a30433f2e70c5013f3862b5622681 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 7.3A; 63W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Mounting: SMD
Electrical mounting: SMT
Gate charge: 12nC
On-state resistance: 0.6Ω
Drain current: 7.3A
Power dissipation: 63W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
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IPD60R800CEAUMA1 INFINEON TECHNOLOGIES IPD%2CIPA60R800CE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 8.4A; 74W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 17.2nC
On-state resistance: 0.8Ω
Drain current: 8.4A
Power dissipation: 74W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK; TO252
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IPD60R950C6ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R950C6-DS-v02_02-en.pdf?fileId=db3a30433ee50ba8013ef00bb8dd26c6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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Lieferzeit 14-21 Tag (e)
2500+0.65 EUR
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BCR185E6327 BCR185E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C579BD09108469&compId=BCR185.pdf?ci_sign=8b5a427d7e89c96143962f50eb7401ae7f4fadba Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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1299+0.055 EUR
1471+0.049 EUR
1695+0.042 EUR
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BCR135SH6327 BCR135SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Kind of transistor: BRT
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 150MHz
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807+0.089 EUR
1000+0.087 EUR
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BCR135WH6327 BCR135WH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Frequency: 150MHz
Type of transistor: NPN
Polarisation: bipolar
Case: SOT323
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Produkt ist nicht verfügbar
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BSS205NH6327XTSA1 BSS205NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7C89A92FB310B&compId=BSS205NH6327XTSA1.pdf?ci_sign=9e21e254c345f4f5bd15a7d2d6784307e5ed3846 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 85mΩ
Drain current: 2.5A
Power dissipation: 0.5W
Gate-source voltage: ±12V
Drain-source voltage: 20V
auf Bestellung 5989 Stücke:
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179+0.4 EUR
228+0.31 EUR
275+0.26 EUR
379+0.19 EUR
489+0.15 EUR
610+0.12 EUR
910+0.079 EUR
962+0.074 EUR
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BSS806NH6327XTSA1 BSS806NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A83CD3DEEF310B&compId=BSS806NH6327XTSA1.pdf?ci_sign=0a43cefa63a012994060e8c30caf4f990ca0f5cc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
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293+0.24 EUR
419+0.17 EUR
486+0.15 EUR
665+0.11 EUR
1000+0.095 EUR
3000+0.079 EUR
6000+0.072 EUR
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BSS806NEH6327XTSA1 BSS806NEH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A835FDBDAD310B&compId=BSS806NEH6327XTSA1.pdf?ci_sign=6c6768b26d5644a3eb003bb38a7a7b5d3fc7db0a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
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228+0.31 EUR
353+0.2 EUR
414+0.17 EUR
573+0.12 EUR
646+0.11 EUR
812+0.088 EUR
1000+0.082 EUR
3000+0.074 EUR
Mindestbestellmenge: 228
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IDH12SG60C IDH12SG60C INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB9852D0F02CFA8&compId=IDH12SG60C-DTE.pdf?ci_sign=948552552f4302256376ce48163a89520e60e971 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; PG-TO220-2; Ir: 1uA
Type of diode: Schottky rectifying
Case: PG-TO220-2
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. forward impulse current: 59A
Kind of package: tube
Leakage current: 1µA
Power dissipation: 125W
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19+3.93 EUR
27+2.72 EUR
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IDH08SG60CXKSA2 IDH08SG60CXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EABC0B3CE5C469&compId=IDH08SG60C.pdf?ci_sign=67eb5deb2a940f929244edb670b052658efcbe09 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; PG-TO220-2; 100W
Type of diode: Schottky rectifying
Case: PG-TO220-2
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. forward impulse current: 42A
Kind of package: tube
Leakage current: 0.6µA
Power dissipation: 100W
auf Bestellung 34 Stücke:
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IPP030N06NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
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100+0.96 EUR
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BSZ120P03NS3GATMA1 BSZ120P03NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A54B51EC71CC&compId=BSZ120P03NS3GATMA1-dte.pdf?ci_sign=e0c32f32dc5dbc17c7be9bd8360258dbaa5dcb5d Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 52W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICE3A1065ELJFKLA1 INFINEON TECHNOLOGIES Datasheet_ICE3A1065ELJ_v20_2Sep08.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a30431c69a49d011c93b934c0056d Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.92 EUR
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IPB100N04S303ATMA1 IPB100N04S303ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA3248C8A286143&compId=IPB100N04S303.pdf?ci_sign=2b702d83a25df2bc0e3b44f941578f4d31d91f02 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Gate charge: 110nC
On-state resistance: 2.5mΩ
Power dissipation: 214W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5-1R9 IPC100N04S5-1R9 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA5216505FA74A&compId=IPC100N04S51R9.pdf?ci_sign=2871d189f489fc547c6611456c441bcb643cc716 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 1.9mΩ
Power dissipation: 100W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5-1R2 IPC100N04S5-1R2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA49771D5F674A&compId=IPC100N04S51R2.pdf?ci_sign=5f94a9b9fd21e204afc56b8d21626078719b2d53 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 131nC
On-state resistance: 1.2mΩ
Power dissipation: 150W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5-1R7 IPC100N04S5-1R7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA4DBB5DE0274A&compId=IPC100N04S51R7.pdf?ci_sign=98c11ae58317b34a2cf3add2c3722b43b2bd6908 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 83nC
On-state resistance: 1.7mΩ
Power dissipation: 115W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5L-1R1 IPC100N04S5L-1R1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA5A929452E74A&compId=IPC100N04S5L1R1.pdf?ci_sign=f8bb6dfa7d8c8c00542f9aa706c257086e3c08b3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 0.14µC
On-state resistance: 1.1mΩ
Power dissipation: 150W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5L-1R5 IPC100N04S5L-1R5 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA5D5ED457274A&compId=IPC100N04S5L1R5.pdf?ci_sign=fc50b98bc7916b1e7b88e330071377b25f0f81f2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 95nC
On-state resistance: 1.5mΩ
Power dissipation: 115W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5L-1R9 IPC100N04S5L-1R9 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA629D2730274A&compId=IPC100N04S5L1R9.pdf?ci_sign=3ce2e74ea43197018f2255b595c01b4158e75dcc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 81nC
On-state resistance: 1.9mΩ
Power dissipation: 100W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5L-2R6 IPC100N04S5L-2R6 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA66647F3E474A&compId=IPC100N04S5L2R6.pdf?ci_sign=a9ba21c0f1b95979b0e81c2e0b59aa5e9169c864 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 55nC
On-state resistance: 2.6mΩ
Power dissipation: 75W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC100N04S6L014ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 2mΩ
Power dissipation: 100W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC100N04S6L020ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Gate charge: 46nC
On-state resistance: 2.7mΩ
Power dissipation: 75W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD100N04S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 100A; 150W; DPAK; automotive industry
Case: DPAK
Mounting: SMD
Technology: MOSFET
Polarisation: N
Type of transistor: N-MOSFET
Electrical mounting: SMT
Gate charge: 118nC
On-state resistance: 1.7mΩ
Power dissipation: 150W
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 100A
Application: automotive industry
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
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2500+1.04 EUR
Mindestbestellmenge: 2500
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IRS2101STRPBF INFINEON TECHNOLOGIES infineon-irs2101-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.82 EUR
Mindestbestellmenge: 2500
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IRFB4020PBFXKMA1 INFINEON TECHNOLOGIES infineon-irfb4020-datasheet-en.pdf?fileId=5546d462533600a4015356158ffd1e05 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS5016-2EKA BTS5016-2EKA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986CDEB37B6469&compId=BTS5016-2EKA.pdf?ci_sign=83c8bc9d42f43a784bc704bee2630f9102c3dd63 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 28mΩ
Technology: PROFET™+ 12V
Supply voltage: 5...28V DC
Produkt ist nicht verfügbar
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CY8C29666-24LTXI INFINEON TECHNOLOGIES Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; Core: 8-bit
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
auf Bestellung 1637 Stücke:
Lieferzeit 14-21 Tag (e)
260+14.6 EUR
Mindestbestellmenge: 260
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CY8C20396A-24LQXI INFINEON TECHNOLOGIES Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; Core: 8-bit
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Clock frequency: 24MHz
Kind of core: 8-bit
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)
490+8.04 EUR
Mindestbestellmenge: 490
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CY8C20546A-24PVXI INFINEON TECHNOLOGIES download Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP48; 1.71÷5.5VDC; Core: 8-bit
Clock frequency: 24MHz
Type of integrated circuit: PSoC microcontroller
Case: SSOP48
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Kind of core: 8-bit
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
30+6.44 EUR
Mindestbestellmenge: 30
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XMC4504F100K512ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4504F100K512ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,512kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 128kB SRAM; 512kB FLASH
Kind of core: 32-bit
Case: PG-LQFP-100
Produkt ist nicht verfügbar
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XMC4100Q48F128ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4100Q48F128ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-VQFN-48
Family: XMC4100
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Memory: 20kB SRAM; 128kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
Produkt ist nicht verfügbar
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XMC4104Q48F128ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4104Q48F128ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-VQFN-48
Family: XMC4100
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Memory: 20kB SRAM; 128kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
Produkt ist nicht verfügbar
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XMC4104Q48K128ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4104Q48K128ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4100
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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XMC4200Q48F256ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4200Q48F256ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 40kBSRAM,256kBFLASH; 3.3VDC
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of core: 32-bit
Memory: 40kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4200
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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XMC4300F100K256AAXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20CE951CEEFA8&compId=XMC4300-DTE.pdf?ci_sign=4a33a095c027e0f144dd0ab2bd2044004e42c17e
XMC4300F100K256AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,256kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 14
Number of 16bit timers: 12
Number of inputs/outputs: 75
Kind of core: 32-bit
Memory: 128kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4300
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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XMC4504F144F512ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4504F144F512ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,512kBFLASH
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Interface: EBI; GPIO; I2C; I2S; LIN; SPI; UART; USB
Case: PG-LQFP-144
Family: XMC4500
Produkt ist nicht verfügbar
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IRS25411STRPBF pVersion=0046&contRep=ZT&docId=E222831E099A5DF1A303005056AB0C4F&compId=irs25401pbf.pdf?ci_sign=e254e61d544328852a104fbb88372e928f9b660a
IRS25411STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; SO8; -700÷500mA; Ch: 2
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED driver
Case: SO8
Output current: -700...500mA
Power: 625mW
Number of channels: 2
Supply voltage: 8...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 180ns
Produkt ist nicht verfügbar
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BGT24LTR11N16E6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DD599DAD3C5E28&compId=BGT24LTR11.pdf?ci_sign=affc801d3381666d890169462b510c4449fcfc61
BGT24LTR11N16E6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape
Case: TSNP16
Mounting: SMD
Kind of package: reel; tape
DC supply current: 45mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3.2...3.4V DC
Noise Figure: 10dB
Open-loop gain: 26dB
Frequency: 24...24.25GHz
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IMZA65R048M1HXKSA1 Infineon-IMZA65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d9ac090535
IMZA65R048M1HXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.07 EUR
9+8.12 EUR
10+7.21 EUR
Mindestbestellmenge: 8
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IPD60R280P7S pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E45A84CBF8C749&compId=IPD60R280P7S.pdf?ci_sign=1564dce193aafb1b5380bf961fddff3a8557bcbb
IPD60R280P7S
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPD60R600P7ATMA1 infineon-ipd60r600p7-datasheet-en.pdf
IPD60R600P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Gate charge: 9nC
On-state resistance: 0.6Ω
Drain current: 4A
Power dissipation: 30W
Pulsed drain current: 16A
Gate-source voltage: ±20V
Drain-source voltage: 600V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: PG-TO252-3
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD60R170CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7255599D874A&compId=IPD60R170CFD7.pdf?ci_sign=87050184a9d4b4583b02a8c4dcb529f39bd56eee
IPD60R170CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 76W; PG-TO252-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
Gate charge: 28nC
On-state resistance: 0.325Ω
Drain current: 9A
Power dissipation: 76W
Gate-source voltage: ±20V
Technology: OptiMOS™
Drain-source voltage: 600V
Case: PG-TO252-3
Produkt ist nicht verfügbar
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IPD60R1K0PFD7SAUMA1 Infineon-IPD60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed6256d5839ef
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 3A; Idm: 8.8A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 1.978Ω
Drain current: 3A
Pulsed drain current: 8.8A
Power dissipation: 26W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
Produkt ist nicht verfügbar
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IPD60R1K5PFD7SAUMA1 Infineon-IPD60R1K5PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e225df2d46744
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 2.2A; Idm: 6A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 2.892Ω
Drain current: 2.2A
Pulsed drain current: 6A
Power dissipation: 22W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
Produkt ist nicht verfügbar
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IPD60R2K0C6ATMA1 Infineon-IPD60R2K0C6-DS-v02_01-EN.pdf?fileId=db3a304329a0f6ee012a0dfc6b8b064f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.5A; Idm: 6A; 22.3W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 2Ω
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 22.3W
Gate-source voltage: ±20V
Technology: CoolMOS™ C6
Drain-source voltage: 600V
Case: PG-TO252
Produkt ist nicht verfügbar
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IPD60R2K0PFD7SAUMA1 Infineon-IPD60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e226704e76747
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 1.9A; 20W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 3.824Ω
Drain current: 1.9A
Pulsed drain current: 4.5A
Power dissipation: 20W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
Produkt ist nicht verfügbar
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IPD60R380C6ATMA1 Infineon-IPD60R380C6-DS-v02_02-EN.pdf?fileId=db3a30433ecb86d4013ed661f42d23f2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; Idm: 30A; 83W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.38Ω
Drain current: 6.7A
Pulsed drain current: 30A
Power dissipation: 83W
Gate-source voltage: ±20V
Technology: CoolMOS™ C6
Drain-source voltage: 600V
Case: PG-TO252
Produkt ist nicht verfügbar
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IPD60R385CPATMA1 Infineon-IPD60R385CP-DS-v02_04-EN.pdf?fileId=db3a30432313ff5e012385595fd16763
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.385Ω
Drain current: 5.7A
Pulsed drain current: 27A
Power dissipation: 83W
Gate-source voltage: ±20V
Technology: CoolMOS™ CP
Drain-source voltage: 600V
Case: PG-TO252
Produkt ist nicht verfügbar
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IPD60R3K3C6ATMA1 Infineon-IPD60R3K3C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129f96874465b3a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 3.3Ω
Drain current: 1.1A
Pulsed drain current: 4A
Power dissipation: 18.1W
Gate-source voltage: ±20V
Technology: CoolMOS™ C6
Drain-source voltage: 600V
Case: PG-TO252
Produkt ist nicht verfügbar
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IPD60R400CEAUMA1 Infineon-IPD60R400CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c83667001f0c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.4Ω
Drain current: 9.3A
Pulsed drain current: 30A
Power dissipation: 112W
Gate-source voltage: ±20V
Technology: CoolMOS™ CE
Drain-source voltage: 600V
Case: PG-TO252
Produkt ist nicht verfügbar
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IPD60R600C6ATMA1 Infineon-IPD60R600C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eef7f5937259b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 19A; 63W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.6Ω
Drain current: 4.6A
Pulsed drain current: 19A
Power dissipation: 63W
Gate-source voltage: ±20V
Technology: CoolMOS™ CE
Drain-source voltage: 600V
Case: PG-TO252
Produkt ist nicht verfügbar
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IPD60R600PFD7SAUMA1 Infineon-IPD60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed61c45f839e9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 4A; Idm: 14A
Case: PG-TO252-3
Mounting: SMD
Version: ESD
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 1.219Ω
Power dissipation: 31W
Drain current: 4A
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 14A
Drain-source voltage: 600V
Technology: CoolMOS™ PFD7
Produkt ist nicht verfügbar
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IPD60R1K0CEAUMA1 Infineon-IPD60R1K0CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7bf4c481e94
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 6.8A; 61W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Mounting: SMD
Electrical mounting: SMT
Gate charge: 13nC
On-state resistance: 1Ω
Drain current: 6.8A
Power dissipation: 61W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK; TO252
auf Bestellung 17500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.33 EUR
Mindestbestellmenge: 2500
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IPD60R2K1CEAUMA1 Infineon-IPD60R2K1CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c7e404601eaa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 3.7A; 38W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 6.7nC
On-state resistance: 2.1Ω
Drain current: 3.7A
Power dissipation: 38W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.25 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R180P7ATMA1 Infineon-IPD60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bd338b83cb3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.39 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R1K5CEAUMA1 Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 5A; 49W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 9.4nC
On-state resistance: 1.5Ω
Drain current: 5A
Power dissipation: 49W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK; TO252
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.28 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R380P6ATMA1 Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10.6A; 83W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Mounting: SMD
Electrical mounting: SMT
Gate charge: 19nC
On-state resistance: 0.38Ω
Drain current: 10.6A
Power dissipation: 83W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.69 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R3K4CEAUMA1 Infineon-IPD60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537fcd09123a87
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 2.6A; 29W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 4.6nC
On-state resistance: 3.17Ω
Drain current: 2.6A
Power dissipation: 29W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.22 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R600P6ATMA1 DS_IPx60R600P6_2_1.pdf?fileId=db3a30433f2e70c5013f3862b5622681
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 7.3A; 63W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Mounting: SMD
Electrical mounting: SMT
Gate charge: 12nC
On-state resistance: 0.6Ω
Drain current: 7.3A
Power dissipation: 63W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.51 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R800CEAUMA1 IPD%2CIPA60R800CE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 8.4A; 74W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 17.2nC
On-state resistance: 0.8Ω
Drain current: 8.4A
Power dissipation: 74W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK; TO252
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.38 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R950C6ATMA1 Infineon-IPD60R950C6-DS-v02_02-en.pdf?fileId=db3a30433ee50ba8013ef00bb8dd26c6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.65 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
BCR185E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C579BD09108469&compId=BCR185.pdf?ci_sign=8b5a427d7e89c96143962f50eb7401ae7f4fadba
BCR185E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1180+0.061 EUR
1299+0.055 EUR
1471+0.049 EUR
1695+0.042 EUR
3000+0.041 EUR
Mindestbestellmenge: 1180
Im Einkaufswagen  Stück im Wert von  UAH
BCR135SH6327 pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9
BCR135SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Kind of transistor: BRT
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 150MHz
auf Bestellung 2930 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
414+0.17 EUR
642+0.11 EUR
807+0.089 EUR
1000+0.087 EUR
Mindestbestellmenge: 414
Im Einkaufswagen  Stück im Wert von  UAH
BCR135WH6327 pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9
BCR135WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Frequency: 150MHz
Type of transistor: NPN
Polarisation: bipolar
Case: SOT323
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS205NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7C89A92FB310B&compId=BSS205NH6327XTSA1.pdf?ci_sign=9e21e254c345f4f5bd15a7d2d6784307e5ed3846
BSS205NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 85mΩ
Drain current: 2.5A
Power dissipation: 0.5W
Gate-source voltage: ±12V
Drain-source voltage: 20V
auf Bestellung 5989 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
228+0.31 EUR
275+0.26 EUR
379+0.19 EUR
489+0.15 EUR
610+0.12 EUR
910+0.079 EUR
962+0.074 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
BSS806NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A83CD3DEEF310B&compId=BSS806NH6327XTSA1.pdf?ci_sign=0a43cefa63a012994060e8c30caf4f990ca0f5cc
BSS806NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 6303 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
293+0.24 EUR
419+0.17 EUR
486+0.15 EUR
665+0.11 EUR
1000+0.095 EUR
3000+0.079 EUR
6000+0.072 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
BSS806NEH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A835FDBDAD310B&compId=BSS806NEH6327XTSA1.pdf?ci_sign=6c6768b26d5644a3eb003bb38a7a7b5d3fc7db0a
BSS806NEH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 5941 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
353+0.2 EUR
414+0.17 EUR
573+0.12 EUR
646+0.11 EUR
812+0.088 EUR
1000+0.082 EUR
3000+0.074 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
IDH12SG60C pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB9852D0F02CFA8&compId=IDH12SG60C-DTE.pdf?ci_sign=948552552f4302256376ce48163a89520e60e971
IDH12SG60C
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; PG-TO220-2; Ir: 1uA
Type of diode: Schottky rectifying
Case: PG-TO220-2
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. forward impulse current: 59A
Kind of package: tube
Leakage current: 1µA
Power dissipation: 125W
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
27+2.72 EUR
28+2.56 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IDH08SG60CXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EABC0B3CE5C469&compId=IDH08SG60C.pdf?ci_sign=67eb5deb2a940f929244edb670b052658efcbe09
IDH08SG60CXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; PG-TO220-2; 100W
Type of diode: Schottky rectifying
Case: PG-TO220-2
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. forward impulse current: 42A
Kind of package: tube
Leakage current: 0.6µA
Power dissipation: 100W
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.41 EUR
26+2.83 EUR
27+2.67 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IPP030N06NF2SAKMA1 Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.96 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
BSZ120P03NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A54B51EC71CC&compId=BSZ120P03NS3GATMA1-dte.pdf?ci_sign=e0c32f32dc5dbc17c7be9bd8360258dbaa5dcb5d
BSZ120P03NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 52W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE3A1065ELJFKLA1 Datasheet_ICE3A1065ELJ_v20_2Sep08.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a30431c69a49d011c93b934c0056d
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.92 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IPB100N04S303ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA3248C8A286143&compId=IPB100N04S303.pdf?ci_sign=2b702d83a25df2bc0e3b44f941578f4d31d91f02
IPB100N04S303ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Gate charge: 110nC
On-state resistance: 2.5mΩ
Power dissipation: 214W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC100N04S5-1R9 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA5216505FA74A&compId=IPC100N04S51R9.pdf?ci_sign=2871d189f489fc547c6611456c441bcb643cc716
IPC100N04S5-1R9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 1.9mΩ
Power dissipation: 100W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC100N04S5-1R2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA49771D5F674A&compId=IPC100N04S51R2.pdf?ci_sign=5f94a9b9fd21e204afc56b8d21626078719b2d53
IPC100N04S5-1R2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 131nC
On-state resistance: 1.2mΩ
Power dissipation: 150W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC100N04S5-1R7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA4DBB5DE0274A&compId=IPC100N04S51R7.pdf?ci_sign=98c11ae58317b34a2cf3add2c3722b43b2bd6908
IPC100N04S5-1R7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 83nC
On-state resistance: 1.7mΩ
Power dissipation: 115W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC100N04S5L-1R1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA5A929452E74A&compId=IPC100N04S5L1R1.pdf?ci_sign=f8bb6dfa7d8c8c00542f9aa706c257086e3c08b3
IPC100N04S5L-1R1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 0.14µC
On-state resistance: 1.1mΩ
Power dissipation: 150W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC100N04S5L-1R5 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA5D5ED457274A&compId=IPC100N04S5L1R5.pdf?ci_sign=fc50b98bc7916b1e7b88e330071377b25f0f81f2
IPC100N04S5L-1R5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 95nC
On-state resistance: 1.5mΩ
Power dissipation: 115W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC100N04S5L-1R9 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA629D2730274A&compId=IPC100N04S5L1R9.pdf?ci_sign=3ce2e74ea43197018f2255b595c01b4158e75dcc
IPC100N04S5L-1R9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 81nC
On-state resistance: 1.9mΩ
Power dissipation: 100W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC100N04S5L-2R6 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA66647F3E474A&compId=IPC100N04S5L2R6.pdf?ci_sign=a9ba21c0f1b95979b0e81c2e0b59aa5e9169c864
IPC100N04S5L-2R6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 55nC
On-state resistance: 2.6mΩ
Power dissipation: 75W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N04S6L014ATMA1 Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 2mΩ
Power dissipation: 100W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC100N04S6L020ATMA1 Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Gate charge: 46nC
On-state resistance: 2.7mΩ
Power dissipation: 75W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD100N04S402ATMA1 Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 100A; 150W; DPAK; automotive industry
Case: DPAK
Mounting: SMD
Technology: MOSFET
Polarisation: N
Type of transistor: N-MOSFET
Electrical mounting: SMT
Gate charge: 118nC
On-state resistance: 1.7mΩ
Power dissipation: 150W
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 100A
Application: automotive industry
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.04 EUR
Mindestbestellmenge: 2500
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IRS2101STRPBF infineon-irs2101-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.82 EUR
Mindestbestellmenge: 2500
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IRFB4020PBFXKMA1 infineon-irfb4020-datasheet-en.pdf?fileId=5546d462533600a4015356158ffd1e05
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS5016-2EKA pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986CDEB37B6469&compId=BTS5016-2EKA.pdf?ci_sign=83c8bc9d42f43a784bc704bee2630f9102c3dd63
BTS5016-2EKA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 28mΩ
Technology: PROFET™+ 12V
Supply voltage: 5...28V DC
Produkt ist nicht verfügbar
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CY8C29666-24LTXI Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; Core: 8-bit
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
auf Bestellung 1637 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
260+14.6 EUR
Mindestbestellmenge: 260
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CY8C20396A-24LQXI Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; Core: 8-bit
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Clock frequency: 24MHz
Kind of core: 8-bit
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
490+8.04 EUR
Mindestbestellmenge: 490
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CY8C20546A-24PVXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP48; 1.71÷5.5VDC; Core: 8-bit
Clock frequency: 24MHz
Type of integrated circuit: PSoC microcontroller
Case: SSOP48
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Kind of core: 8-bit
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+6.44 EUR
Mindestbestellmenge: 30
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