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BTS70202EPAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS7020-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f10627dfb6ca3 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5A; Ch: 2; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 23.7mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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BSB014N04LX3GXUMA1 BSB014N04LX3GXUMA1 INFINEON TECHNOLOGIES BSB014N04LX3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Mounting: SMD
Polarisation: unipolar
On-state resistance: 1.4mΩ
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Gate-source voltage: ±20V
Case: CanPAK™ MX; MG-WDSON-2
Technology: OptiMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPB014N04NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB014N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12b8ec6af7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 40V; 188W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Power dissipation: 188W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 1.03mΩ
Mounting: SMD
Gate charge: 159nC
Kind of channel: enhancement
Technology: SiC
Electrical mounting: SMT
auf Bestellung 800 Stücke:
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800+1.02 EUR
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IPDD60R150G7XTMA1 INFINEON TECHNOLOGIES IPDD60R150G7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 16A; Idm: 45A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 45A
Power dissipation: 95W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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IPA60R190P6XKSA1 IPA60R190P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C967A58C71BF&compId=IPA60R190P6-DTE.pdf?ci_sign=103642d66197600c23afd64a60a16e360317670a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 364 Stücke:
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34+2.16 EUR
44+1.66 EUR
52+1.39 EUR
100+1.24 EUR
250+1.19 EUR
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IPB60R180C7ATMA1 IPB60R180C7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA36D388DCE6143&compId=IPB60R180C7.pdf?ci_sign=6efc51a6c3abf5b6fbce0ca5738317783afa99b6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 24nC
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39+1.87 EUR
50+1.83 EUR
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IRFP4137PBF IRFP4137PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCE74FCBCE55EA&compId=IRFP4137PBF.pdf?ci_sign=8fda3d727ad858b6c5b1d550361679c914412366 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO247AC
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247AC
Polarisation: unipolar
Gate charge: 83nC
On-state resistance: 56mΩ
Gate-source voltage: ±20V
Drain current: 38A
Drain-source voltage: 300V
Power dissipation: 341W
Kind of package: tube
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15+5.02 EUR
16+4.52 EUR
25+4.02 EUR
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SPP08N80C3 SPP08N80C3 INFINEON TECHNOLOGIES Infineon-SPP08N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a905a6005c8a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 442 Stücke:
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23+3.12 EUR
27+2.75 EUR
29+2.47 EUR
50+2.33 EUR
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SPP08N80C3XKSA1 INFINEON TECHNOLOGIES SPP08N80C3_rev2[1].9.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a30432313ff5e0123a905a6005c8a Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 800V; 8A; 104W; TO220-3
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 0.56Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 60nC
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50+1.66 EUR
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TLE4269GXUMA1 TLE4269GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BADB0E59BA053D7&compId=TLE4269.pdf?ci_sign=ba658610b7eaf990cee200182c4a95c425cdf371 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...45V
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S80KS5122GABHA020 INFINEON TECHNOLOGIES Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S80KS5122GABHB020 INFINEON TECHNOLOGIES Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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S80KS5122GABHM020 INFINEON TECHNOLOGIES S80KS5122.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷125°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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S80KS5122GABHV023 INFINEON TECHNOLOGIES S80KS5122.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S80KS2564GACHI040 INFINEON TECHNOLOGIES Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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S80KS2564GACHI043 INFINEON TECHNOLOGIES Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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S80KS2564GACHV040 INFINEON TECHNOLOGIES Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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S80KS2564GACHV043 INFINEON TECHNOLOGIES Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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BFP196E6327HTSA1 INFINEON TECHNOLOGIES Infineon-BFP196-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f02e2b21e7723 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 150mA; 0.7W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT143
Current gain: 70...140
Mounting: SMD
Frequency: 7.5GHz
Kind of transistor: RF
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BFP196WNH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP196WN-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017ed4fc504e2643 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 150mA; 700mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT343
Current gain: 70
Mounting: SMD
Frequency: 7.5GHz
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.1 EUR
Mindestbestellmenge: 3000
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IDWD15G120C5XKSA1 IDWD15G120C5XKSA1 INFINEON TECHNOLOGIES Infineon-IDWD15G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d54d2b5489 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; 200W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Max. forward impulse current: 170A
Power dissipation: 200W
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IDWD10G120C5XKSA1 IDWD10G120C5XKSA1 INFINEON TECHNOLOGIES Infineon-IDWD10G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d53cbf5486 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; 148W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Max. forward impulse current: 140A
Power dissipation: 148W
auf Bestellung 140 Stücke:
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11+6.74 EUR
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2ED2106S06FXUMA1 2ED2106S06FXUMA1 INFINEON TECHNOLOGIES Infineon-2ED2106-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7402029e7 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Mounting: SMD
Case: PG-DSO-8
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -0.7...0.29A
Number of channels: 2
Voltage class: 650V
Supply voltage: 10...20V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
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CY7C4041KV13-667FCXC INFINEON TECHNOLOGIES Infineon-CY7C4021KV13_CY7C4041KV13_72-Mbit_QDR-IV_HP_SRAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4cc743a40 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 667MHz
Produkt ist nicht verfügbar
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IDDD04G65C6XTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE988DD9AEF4A36D8BF&compId=IDDD04G65C6.pdf?ci_sign=b0b3506822dc2567e5c48d63734f13f0f95caef6 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 4A; 56W
Type of diode: Schottky rectifying
Case: PG-HDSOP-10-1
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.25V
Leakage current: 0.4µA
Max. forward impulse current: 23A
Kind of package: reel; tape
Power dissipation: 56W
Produkt ist nicht verfügbar
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IPA086N10N3GXKSA1 IPA086N10N3GXKSA1 INFINEON TECHNOLOGIES IPA086N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 37.5W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 37.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 336 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.4 EUR
40+1.8 EUR
46+1.56 EUR
62+1.16 EUR
100+1.04 EUR
250+1.02 EUR
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IPI086N10N3GXKSA1 IPI086N10N3GXKSA1 INFINEON TECHNOLOGIES IPI086N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 127 Stücke:
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32+2.3 EUR
58+1.24 EUR
66+1.09 EUR
100+1.02 EUR
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IPA083N10NM5SXKSA1 IPA083N10NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA083N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfe00a06e30 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
auf Bestellung 352 Stücke:
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36+1.99 EUR
40+1.79 EUR
46+1.57 EUR
51+1.42 EUR
Mindestbestellmenge: 36
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IPA083N10N5XKSA1 IPA083N10N5XKSA1 INFINEON TECHNOLOGIES IPA083N10N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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17+4.2 EUR
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IPP034NE7N3GXKSA1 IPP034NE7N3GXKSA1 INFINEON TECHNOLOGIES IPP034NE7N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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17+4.32 EUR
22+3.25 EUR
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IPD70P04P409ATMA2 INFINEON TECHNOLOGIES Infineon-IPD70P04P4_09-DS-v01_00-en.pdf?fileId=db3a304329a0f6ee0129db9c0b0b5c51 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 40V; 73A; 75W; DPAK; automotive industry
Type of transistor: P-MOSFET
Technology: MOSFET
Drain-source voltage: 40V
Drain current: 73A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 54nC
Kind of channel: enhancement
Application: automotive industry
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IRFP4868PBFAKMA1 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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SPI21N50C3XKSA1 INFINEON TECHNOLOGIES SPP_I_A21N50C3_Rev[1].3.0.pdf?folderId=db3a3043163797a6011637e7be4f0060&fileId=db3a3043163797a6011637eeb9340085 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 560V; 21A; 208W; TO262
Type of transistor: N-MOSFET
Drain-source voltage: 560V
Drain current: 21A
Power dissipation: 208W
Case: TO262
Gate-source voltage: 20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 95nC
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50+2.13 EUR
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IRFR540ZTRLPBF INFINEON TECHNOLOGIES irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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IRFS7540TRLPBF IRFS7540TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A66E02D68081EC&compId=irfs7540pbf.pdf?ci_sign=5d45debb0a3032e3043d97dfa50cf863af6bf176 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 88nC
Kind of channel: enhancement
Trade name: StrongIRFET
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IFCM20T65GDXKMA1 IFCM20T65GDXKMA1 INFINEON TECHNOLOGIES IFCM20T65GD.pdf Category: Motor and PWM drivers
Description: IC: driver; IPM,2-phase motor controller; PG-MDIP24; 20A; 60kHz
Type of integrated circuit: driver
Kind of integrated circuit: 2-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™ 5
Case: PG-MDIP24
Output current: 20A
Integrated circuit features: interleaved PFC
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...450V DC
Frequency: 60kHz
Kind of package: tube
Voltage class: 650V
Power dissipation: 52.3W
Produkt ist nicht verfügbar
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IRFS7434TRL7PP INFINEON TECHNOLOGIES irfs7434-7ppbf.pdf?fileId=5546d462533600a40153563a7c0721ce Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 229A; Idm: 1.3kA; 245W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 229A
Power dissipation: 245W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 1.3kA
Produkt ist nicht verfügbar
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IRFS7434TRLPBF INFINEON TECHNOLOGIES irfs7434pbf.pdf?fileId=5546d462533600a40153563a730021cc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 320A; 294W; D2PAK,TO263AB; SMT
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: N
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 294W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 216nC
Kind of channel: enhancement
Electrical mounting: SMT
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CY8C4248LTI-L485 INFINEON TECHNOLOGIES Infineon-PSoC_4_PSoC_4200L_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed894aa5a14&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; Core: 32-bit
Type of integrated circuit: PSoC microcontroller
Clock frequency: 48MHz
Mounting: SMD
Kind of core: 32-bit
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IPP015N04NGXKSA1 IPP015N04NGXKSA1 INFINEON TECHNOLOGIES IPP015N04NG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPP015N04NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP015N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce56640183175b60d92ae3 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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100+1.26 EUR
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IPA65R190E6XKSA1 IPA65R190E6XKSA1 INFINEON TECHNOLOGIES IPA65R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 34W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.19Ω
Drain current: 20.2A
Gate-source voltage: ±20V
Power dissipation: 34W
Drain-source voltage: 650V
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19+3.88 EUR
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IPA65R650CEXKSA1 IPA65R650CEXKSA1 INFINEON TECHNOLOGIES IPA65R650CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 28W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.65Ω
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 650V
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60+1.2 EUR
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IPA65R380C6XKSA1 IPA65R380C6XKSA1 INFINEON TECHNOLOGIES IPA65R380C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.38Ω
Drain current: 10.6A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 650V
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IPS65R1K5CEAKMA1 IPS65R1K5CEAKMA1 INFINEON TECHNOLOGIES IPS65R1K5CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; 28W; IPAK SL
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.5Ω
Drain current: 3.1A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 650V
auf Bestellung 616 Stücke:
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191+0.38 EUR
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237+0.3 EUR
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IPL65R1K5C6SATMA1 IPL65R1K5C6SATMA1 INFINEON TECHNOLOGIES IPL65R1K5C6S-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3A; 26.6W; PG-VSON-4
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: SMD
Case: PG-VSON-4
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.5Ω
Drain current: 3A
Gate-source voltage: ±20V
Power dissipation: 26.6W
Drain-source voltage: 650V
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IPP65R095C7XKSA1 IPP65R095C7XKSA1 INFINEON TECHNOLOGIES IPP65R095C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO220-3
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: PG-TO220-3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 95mΩ
Drain current: 24A
Gate-source voltage: ±20V
Power dissipation: 128W
Drain-source voltage: 650V
auf Bestellung 200 Stücke:
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17+4.23 EUR
19+3.93 EUR
50+3.73 EUR
100+3.36 EUR
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IPW65R420CFDFKSA1 IPW65R420CFDFKSA1 INFINEON TECHNOLOGIES IPW65R420CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO247-3
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: PG-TO247-3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.42Ω
Drain current: 8.7A
Gate-source voltage: ±20V
Power dissipation: 83.3W
Drain-source voltage: 650V
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IPA60R650CEXKSA1 IPA60R650CEXKSA1 INFINEON TECHNOLOGIES IPA60R650CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 28W; TO220FP
Technology: CoolMOS™ CE
Kind of channel: enhancement
Mounting: THT
Case: TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.65Ω
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 600V
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54+1.34 EUR
62+1.16 EUR
73+0.99 EUR
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BSP135H6906XTSA1 INFINEON TECHNOLOGIES Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 120mA; 1.8W; PG-SOT223; SMT
Mounting: SMD
Drain current: 0.12A
Power dissipation: 1.8W
Gate-source voltage: 20V
On-state resistance: 30Ω
Drain-source voltage: 600V
Application: automotive industry
Case: PG-SOT223
Electrical mounting: SMT
Type of transistor: N-MOSFET
Technology: SIPMOS™
Gate charge: 4.9nC
auf Bestellung 20000 Stücke:
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1000+0.99 EUR
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IRFR2407TRPBF IRFR2407TRPBF INFINEON TECHNOLOGIES irfr2407pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BFR360FH6327XTSA1 BFR360FH6327XTSA1 INFINEON TECHNOLOGIES BFR360F.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Kind of transistor: RF
Case: TSFP-3
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 35mA
Power dissipation: 0.21W
Collector-emitter voltage: 6V
Frequency: 14GHz
Current gain: 90...160
Polarisation: bipolar
auf Bestellung 2801 Stücke:
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278+0.26 EUR
348+0.21 EUR
391+0.18 EUR
459+0.16 EUR
516+0.14 EUR
569+0.13 EUR
625+0.11 EUR
Mindestbestellmenge: 278
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IPD70R1K4P7SAUMA1 IPD70R1K4P7SAUMA1 INFINEON TECHNOLOGIES IPD70R1K4P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2482 Stücke:
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120+0.6 EUR
152+0.47 EUR
182+0.39 EUR
191+0.38 EUR
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IPD70R1K4CEAUMA1 IPD70R1K4CEAUMA1 INFINEON TECHNOLOGIES IPD70R1K4CE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.4A; 53W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.4A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 10.5nC
Produkt ist nicht verfügbar
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IPD70R2K0CEAUMA1 IPD70R2K0CEAUMA1 INFINEON TECHNOLOGIES IPD70R2K0CE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.6A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 7.8nC
Produkt ist nicht verfügbar
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SGW50N60HS SGW50N60HS INFINEON TECHNOLOGIES SGW50N60HS.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 416W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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IPC313N10N3RX1SA2 INFINEON TECHNOLOGIES Infineon-IPC313N10N3R-DS-v02_00-EN.pdf?fileId=5546d462525dbac4015287a4906625ca Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 2A; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 2A
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 22165 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.02 EUR
Mindestbestellmenge: 12
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BAT1502ELE6327XTMA1 INFINEON TECHNOLOGIES Infineon-BAT15-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895df9e4e74 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
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BAT1504RE6152HTSA1 INFINEON TECHNOLOGIES Infineon-BAT15-04R-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389615154e83 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
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BAT15099E6433HTMA1 INFINEON TECHNOLOGIES INFNS15420-1.pdf?t.download=true&u=5oefqw Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
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BTS70202EPAXUMA1 Infineon-BTS7020-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f10627dfb6ca3
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5A; Ch: 2; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 23.7mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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BSB014N04LX3GXUMA1 BSB014N04LX3G-DTE.pdf
BSB014N04LX3GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Mounting: SMD
Polarisation: unipolar
On-state resistance: 1.4mΩ
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Gate-source voltage: ±20V
Case: CanPAK™ MX; MG-WDSON-2
Technology: OptiMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPB014N04NF2SATMA1 Infineon-IPB014N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12b8ec6af7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 40V; 188W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Power dissipation: 188W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 1.03mΩ
Mounting: SMD
Gate charge: 159nC
Kind of channel: enhancement
Technology: SiC
Electrical mounting: SMT
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+1.02 EUR
Mindestbestellmenge: 800
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IPDD60R150G7XTMA1 IPDD60R150G7.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 16A; Idm: 45A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 45A
Power dissipation: 95W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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IPA60R190P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C967A58C71BF&compId=IPA60R190P6-DTE.pdf?ci_sign=103642d66197600c23afd64a60a16e360317670a
IPA60R190P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 364 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.16 EUR
44+1.66 EUR
52+1.39 EUR
100+1.24 EUR
250+1.19 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R180C7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA36D388DCE6143&compId=IPB60R180C7.pdf?ci_sign=6efc51a6c3abf5b6fbce0ca5738317783afa99b6
IPB60R180C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 24nC
auf Bestellung 936 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.67 EUR
39+1.87 EUR
50+1.83 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4137PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCE74FCBCE55EA&compId=IRFP4137PBF.pdf?ci_sign=8fda3d727ad858b6c5b1d550361679c914412366
IRFP4137PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO247AC
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247AC
Polarisation: unipolar
Gate charge: 83nC
On-state resistance: 56mΩ
Gate-source voltage: ±20V
Drain current: 38A
Drain-source voltage: 300V
Power dissipation: 341W
Kind of package: tube
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.02 EUR
16+4.52 EUR
25+4.02 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
SPP08N80C3 Infineon-SPP08N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a905a6005c8a
SPP08N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 442 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.12 EUR
27+2.75 EUR
29+2.47 EUR
50+2.33 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
SPP08N80C3XKSA1 SPP08N80C3_rev2[1].9.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a30432313ff5e0123a905a6005c8a
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 800V; 8A; 104W; TO220-3
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 0.56Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 60nC
auf Bestellung 1082 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.66 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
TLE4269GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BADB0E59BA053D7&compId=TLE4269.pdf?ci_sign=ba658610b7eaf990cee200182c4a95c425cdf371
TLE4269GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S80KS5122GABHA020 Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S80KS5122GABHB020 Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S80KS5122GABHM020 S80KS5122.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷125°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S80KS5122GABHV023 S80KS5122.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S80KS2564GACHI040 Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S80KS2564GACHI043 Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S80KS2564GACHV040 Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S80KS2564GACHV043 Infineon-Data_Sheet_HYPERRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018050aef7544588
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP196E6327HTSA1 Infineon-BFP196-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f02e2b21e7723
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 150mA; 0.7W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT143
Current gain: 70...140
Mounting: SMD
Frequency: 7.5GHz
Kind of transistor: RF
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP196WNH6327XTSA1 Infineon-BFP196WN-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017ed4fc504e2643
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 150mA; 700mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT343
Current gain: 70
Mounting: SMD
Frequency: 7.5GHz
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.1 EUR
Mindestbestellmenge: 3000
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IDWD15G120C5XKSA1 Infineon-IDWD15G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d54d2b5489
IDWD15G120C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; 200W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Max. forward impulse current: 170A
Power dissipation: 200W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDWD10G120C5XKSA1 Infineon-IDWD10G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d53cbf5486
IDWD10G120C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; 148W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Max. forward impulse current: 140A
Power dissipation: 148W
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.74 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
2ED2106S06FXUMA1 Infineon-2ED2106-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7402029e7
2ED2106S06FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Mounting: SMD
Case: PG-DSO-8
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -0.7...0.29A
Number of channels: 2
Voltage class: 650V
Supply voltage: 10...20V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Produkt ist nicht verfügbar
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CY7C4041KV13-667FCXC Infineon-CY7C4021KV13_CY7C4041KV13_72-Mbit_QDR-IV_HP_SRAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4cc743a40
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 667MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDDD04G65C6XTMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE988DD9AEF4A36D8BF&compId=IDDD04G65C6.pdf?ci_sign=b0b3506822dc2567e5c48d63734f13f0f95caef6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 4A; 56W
Type of diode: Schottky rectifying
Case: PG-HDSOP-10-1
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.25V
Leakage current: 0.4µA
Max. forward impulse current: 23A
Kind of package: reel; tape
Power dissipation: 56W
Produkt ist nicht verfügbar
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IPA086N10N3GXKSA1 IPA086N10N3G-DTE.pdf
IPA086N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 37.5W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 37.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 336 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.4 EUR
40+1.8 EUR
46+1.56 EUR
62+1.16 EUR
100+1.04 EUR
250+1.02 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IPI086N10N3GXKSA1 IPI086N10N3G-DTE.pdf
IPI086N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.3 EUR
58+1.24 EUR
66+1.09 EUR
100+1.02 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IPA083N10NM5SXKSA1 Infineon-IPA083N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfe00a06e30
IPA083N10NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
auf Bestellung 352 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
40+1.79 EUR
46+1.57 EUR
51+1.42 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IPA083N10N5XKSA1 IPA083N10N5-DTE.pdf
IPA083N10N5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.2 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IPP034NE7N3GXKSA1 IPP034NE7N3G-DTE.pdf
IPP034NE7N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.32 EUR
22+3.25 EUR
Mindestbestellmenge: 17
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IPD70P04P409ATMA2 Infineon-IPD70P04P4_09-DS-v01_00-en.pdf?fileId=db3a304329a0f6ee0129db9c0b0b5c51
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 40V; 73A; 75W; DPAK; automotive industry
Type of transistor: P-MOSFET
Technology: MOSFET
Drain-source voltage: 40V
Drain current: 73A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 54nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.84 EUR
Mindestbestellmenge: 2500
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IRFP4868PBFAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPI21N50C3XKSA1 SPP_I_A21N50C3_Rev[1].3.0.pdf?folderId=db3a3043163797a6011637e7be4f0060&fileId=db3a3043163797a6011637eeb9340085
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 560V; 21A; 208W; TO262
Type of transistor: N-MOSFET
Drain-source voltage: 560V
Drain current: 21A
Power dissipation: 208W
Case: TO262
Gate-source voltage: 20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 95nC
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+2.13 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRFR540ZTRLPBF irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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IRFS7540TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A66E02D68081EC&compId=irfs7540pbf.pdf?ci_sign=5d45debb0a3032e3043d97dfa50cf863af6bf176
IRFS7540TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 88nC
Kind of channel: enhancement
Trade name: StrongIRFET
Produkt ist nicht verfügbar
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IFCM20T65GDXKMA1 IFCM20T65GD.pdf
IFCM20T65GDXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IPM,2-phase motor controller; PG-MDIP24; 20A; 60kHz
Type of integrated circuit: driver
Kind of integrated circuit: 2-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™ 5
Case: PG-MDIP24
Output current: 20A
Integrated circuit features: interleaved PFC
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...450V DC
Frequency: 60kHz
Kind of package: tube
Voltage class: 650V
Power dissipation: 52.3W
Produkt ist nicht verfügbar
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IRFS7434TRL7PP irfs7434-7ppbf.pdf?fileId=5546d462533600a40153563a7c0721ce
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 229A; Idm: 1.3kA; 245W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 229A
Power dissipation: 245W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 1.3kA
Produkt ist nicht verfügbar
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IRFS7434TRLPBF irfs7434pbf.pdf?fileId=5546d462533600a40153563a730021cc
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 320A; 294W; D2PAK,TO263AB; SMT
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: N
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 294W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 216nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+1.54 EUR
Mindestbestellmenge: 800
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CY8C4248LTI-L485 Infineon-PSoC_4_PSoC_4200L_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed894aa5a14&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; Core: 32-bit
Type of integrated circuit: PSoC microcontroller
Clock frequency: 48MHz
Mounting: SMD
Kind of core: 32-bit
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
260+10.7 EUR
Mindestbestellmenge: 260
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IPP015N04NGXKSA1 IPP015N04NG-DTE.pdf
IPP015N04NGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
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IPP015N04NF2SAKMA1 Infineon-IPP015N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce56640183175b60d92ae3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 895 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+1.26 EUR
Mindestbestellmenge: 100
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IPA65R190E6XKSA1 IPA65R190E6-DTE.pdf
IPA65R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 34W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.19Ω
Drain current: 20.2A
Gate-source voltage: ±20V
Power dissipation: 34W
Drain-source voltage: 650V
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.88 EUR
21+3.4 EUR
Mindestbestellmenge: 19
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IPA65R650CEXKSA1 IPA65R650CE-DTE.pdf
IPA65R650CEXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 28W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.65Ω
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 650V
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
81+0.89 EUR
Mindestbestellmenge: 60
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IPA65R380C6XKSA1 IPA65R380C6-DTE.pdf
IPA65R380C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.38Ω
Drain current: 10.6A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 650V
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
37+1.97 EUR
100+1.62 EUR
Mindestbestellmenge: 35
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IPS65R1K5CEAKMA1 IPS65R1K5CE-DTE.pdf
IPS65R1K5CEAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; 28W; IPAK SL
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.5Ω
Drain current: 3.1A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 650V
auf Bestellung 616 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
191+0.38 EUR
211+0.34 EUR
237+0.3 EUR
Mindestbestellmenge: 191
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IPL65R1K5C6SATMA1 IPL65R1K5C6S-DTE.pdf
IPL65R1K5C6SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3A; 26.6W; PG-VSON-4
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: SMD
Case: PG-VSON-4
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.5Ω
Drain current: 3A
Gate-source voltage: ±20V
Power dissipation: 26.6W
Drain-source voltage: 650V
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
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IPP65R095C7XKSA1 IPP65R095C7-DTE.pdf
IPP65R095C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO220-3
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: PG-TO220-3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 95mΩ
Drain current: 24A
Gate-source voltage: ±20V
Power dissipation: 128W
Drain-source voltage: 650V
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.23 EUR
19+3.93 EUR
50+3.73 EUR
100+3.36 EUR
Mindestbestellmenge: 17
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IPW65R420CFDFKSA1 IPW65R420CFD-DTE.pdf
IPW65R420CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO247-3
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: PG-TO247-3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.42Ω
Drain current: 8.7A
Gate-source voltage: ±20V
Power dissipation: 83.3W
Drain-source voltage: 650V
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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IPA60R650CEXKSA1 IPA60R650CE-DTE.pdf
IPA60R650CEXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 28W; TO220FP
Technology: CoolMOS™ CE
Kind of channel: enhancement
Mounting: THT
Case: TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.65Ω
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 600V
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.34 EUR
62+1.16 EUR
73+0.99 EUR
Mindestbestellmenge: 54
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BSP135H6906XTSA1 Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 120mA; 1.8W; PG-SOT223; SMT
Mounting: SMD
Drain current: 0.12A
Power dissipation: 1.8W
Gate-source voltage: 20V
On-state resistance: 30Ω
Drain-source voltage: 600V
Application: automotive industry
Case: PG-SOT223
Electrical mounting: SMT
Type of transistor: N-MOSFET
Technology: SIPMOS™
Gate charge: 4.9nC
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.99 EUR
Mindestbestellmenge: 1000
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IRFR2407TRPBF irfr2407pbf.pdf
IRFR2407TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFR360FH6327XTSA1 BFR360F.pdf
BFR360FH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Kind of transistor: RF
Case: TSFP-3
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 35mA
Power dissipation: 0.21W
Collector-emitter voltage: 6V
Frequency: 14GHz
Current gain: 90...160
Polarisation: bipolar
auf Bestellung 2801 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
348+0.21 EUR
391+0.18 EUR
459+0.16 EUR
516+0.14 EUR
569+0.13 EUR
625+0.11 EUR
Mindestbestellmenge: 278
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IPD70R1K4P7SAUMA1 IPD70R1K4P7S.pdf
IPD70R1K4P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2482 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
152+0.47 EUR
182+0.39 EUR
191+0.38 EUR
Mindestbestellmenge: 120
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IPD70R1K4CEAUMA1 IPD70R1K4CE.pdf
IPD70R1K4CEAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.4A; 53W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.4A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 10.5nC
Produkt ist nicht verfügbar
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IPD70R2K0CEAUMA1 IPD70R2K0CE.pdf
IPD70R2K0CEAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.6A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 7.8nC
Produkt ist nicht verfügbar
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SGW50N60HS SGW50N60HS.pdf
SGW50N60HS
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 416W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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IPC313N10N3RX1SA2 Infineon-IPC313N10N3R-DS-v02_00-EN.pdf?fileId=5546d462525dbac4015287a4906625ca
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 2A; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 2A
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 22165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.02 EUR
Mindestbestellmenge: 12
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BAT1502ELE6327XTMA1 Infineon-BAT15-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895df9e4e74
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
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BAT1504RE6152HTSA1 Infineon-BAT15-04R-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389615154e83
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
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BAT15099E6433HTMA1 INFNS15420-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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