Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149581) > Seite 2488 nach 2494
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BTS5030-2EKA | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; PG-DSO-14 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 4A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: PG-DSO-14 On-state resistance: 60mΩ Supply voltage: 5...28V DC Technology: PROFET™+ 12V Power dissipation: 2.1W |
Produkt ist nicht verfügbar |
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BTS5016-2EKA | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 6A; Ch: 2; N-Channel; SMD; SO14 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 6A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: SO14 On-state resistance: 28mΩ Supply voltage: 5...28V DC Technology: PROFET™+ 12V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BTS50451EJAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8-EP Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-DSO-8-EP On-state resistance: 45mΩ Supply voltage: 5...28V DC Technology: PROFET™+ 12V Operating temperature: -40...150°C Power dissipation: 1.6W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BTS50452EKAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch Type of integrated circuit: power switch |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS500101TADATMA2 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch Type of integrated circuit: power switch |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS500151TADATMA2 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch Type of integrated circuit: power switch |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS50121EKBXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch Type of integrated circuit: power switch |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS50201EKAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch Type of integrated circuit: power switch |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI180N10N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 43A Power dissipation: 71W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Kind of channel: enhancement Technology: OptiMOS™ 3 |
auf Bestellung 478 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP180N10N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 43A Power dissipation: 71W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
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IAUA180N10S5N029AUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 24A Pulsed drain current: 561A Power dissipation: 221W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IPB180N10S402ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRG4RC10KDTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 9A; 38W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 9A Power dissipation: 38W Case: DPAK Mounting: SMD Kind of package: reel Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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IR38265MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7 Operating temperature: -40...125°C Case: PQFN5X7 DC supply current: 50mA Supply voltage: 4.5...5.5V Frequency: 0.15...1.5MHz Output voltage: 0.5...14V DC Output current: 30A Type of integrated circuit: PMIC Interface: I2C; PVID Number of channels: 1 Input voltage: 5.3...16V DC Kind of package: reel; tape Topology: buck Kind of integrated circuit: POL converter Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY62136ESL-45ZSXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY62138FLL-45SXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Access time: 45ns Case: SO32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY62138FLL-45SXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Access time: 45ns Case: SO32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY62146ELL-45ZSXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY62146ESL-45ZSXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY62146G30-45BVXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.2...3.6V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY62146G30-45ZSXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.2...3.6V DC Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY62147G-45ZSXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY62147G30-45B2XI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.2...3.6V DC Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BSS308PEH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23 Type of transistor: P-MOSFET Technology: OptiMOS™ P3 Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Kind of channel: enhancement Power dissipation: 0.5W |
auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) |
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BSL308PEH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6; ESD Type of transistor: P-MOSFET x2 Technology: OptiMOS™ P3 Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A Case: PG-TSOP-6 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Kind of channel: enhancement Version: ESD Power dissipation: 0.5W |
auf Bestellung 1996 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS314PEH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23 Type of transistor: P-MOSFET Technology: OptiMOS™ P3 Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: SMD Kind of channel: enhancement Power dissipation: 0.5W |
auf Bestellung 3024 Stücke: Lieferzeit 14-21 Tag (e) |
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S29GL01GS12DHIV10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel Operating temperature: -40...85°C Kind of package: in-tray Kind of interface: parallel Memory: 1Gb FLASH Mounting: SMD Case: BGA64 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 120ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29GL01GS12DHIV20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel Operating temperature: -40...85°C Kind of package: in-tray Kind of interface: parallel Memory: 1Gb FLASH Mounting: SMD Case: BGA64 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 120ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29GL01GS12DHVV10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel Operating temperature: -40...105°C Kind of package: in-tray Kind of interface: parallel Memory: 1Gb FLASH Mounting: SMD Case: BGA64 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 120ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29GL01GS12TFIV10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel Operating temperature: -40...85°C Kind of package: in-tray Kind of interface: parallel Memory: 1Gb FLASH Mounting: SMD Case: TSOP56 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 120ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29GL01GS12TFIV20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel Operating temperature: -40...85°C Kind of package: in-tray Kind of interface: parallel Memory: 1Gb FLASH Mounting: SMD Case: TSOP56 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 120ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29GL01GS12TFVV20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel Operating temperature: -40...105°C Kind of package: in-tray Kind of interface: parallel Memory: 1Gb FLASH Mounting: SMD Case: TSOP56 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 120ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S70GL02GS12FHBV20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel Operating temperature: -40...105°C Application: automotive Kind of package: in-tray Kind of interface: parallel Memory: 2Gb FLASH Mounting: SMD Case: BGA64 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 120ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S70GL02GS12FHBV23 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel Operating temperature: -40...105°C Application: automotive Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb FLASH Mounting: SMD Case: BGA64 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 120ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S70GL02GS12FHIV13 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb FLASH Mounting: SMD Case: BGA64 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 120ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S70GL02GS12FHIV20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel Operating temperature: -40...85°C Kind of package: in-tray Kind of interface: parallel Memory: 2Gb FLASH Mounting: SMD Case: BGA64 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 120ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S70GL02GS12FHIV23 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb FLASH Mounting: SMD Case: BGA64 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 120ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S70GL02GS12FHVV20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel Operating temperature: -40...105°C Kind of package: in-tray Kind of interface: parallel Memory: 2Gb FLASH Mounting: SMD Case: BGA64 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 120ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S70GL02GS12FHVV23 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel Operating temperature: -40...105°C Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb FLASH Mounting: SMD Case: BGA64 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 120ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29GL01GS11DHB010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 1Gb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 110ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Application: automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29GL01GS11DHI010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 1Gb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 110ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Output voltage: 2.7...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29GL01GS11DHI020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 1Gb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 110ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Output voltage: 2.7...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29GL01GS11DHIV13 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 1Gb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 110ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Output voltage: 1.65...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29GL01GS11DHIV20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 1Gb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 110ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Output voltage: 1.65...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29GL01GS11DHIV23 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 1Gb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 110ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Output voltage: 1.65...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29GL01GS11DHV010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 1Gb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 110ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29GL01GS11DHV013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 1Gb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 110ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29GL01GS11DHV020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 1Gb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 110ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29GL01GS11DHV023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 1Gb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 110ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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2EDL23N06PJXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; -2.5÷1.8A Technology: EiceDRIVER™ Case: PG-DSO-14 Mounting: SMD Kind of package: reel; tape Topology: MOSFET half-bridge Voltage class: 600V Supply voltage: 10...20V Output current: -2.5...1.8A Type of integrated circuit: driver Number of channels: 2 Integrated circuit features: integrated bootstrap functionality Kind of integrated circuit: high-/low-side; MOSFET gate driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IPD033N06NATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT5403WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() ![]() Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; 230mW Type of diode: Schottky rectifying Max. off-state voltage: 30V Semiconductor structure: single diode Case: SOD323 Mounting: SMD Max. forward impulse current: 0.6A Load current: 0.2A Power dissipation: 0.23W |
auf Bestellung 4374 Stücke: Lieferzeit 14-21 Tag (e) |
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FF450R06ME3 | INFINEON TECHNOLOGIES |
![]() Description: Transistor/transistor; IGBT half-bridge,NTC thermistor; 1.25kW Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Power dissipation: 1.25kW Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoDUAL™ 3 Topology: IGBT half-bridge; NTC thermistor Type of semiconductor module: IGBT Case: AG-ECONOD-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSF450NE7NH3XUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 15A; 18W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 15A Power dissipation: 18W Case: CanPAK™ S; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
FF450R33T3E3B5BPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor/transistor; IGBT half-bridge; Urmax: 3.3kV; Ic: 450A Max. off-state voltage: 3.3kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Electrical mounting: screw Mechanical mounting: screw Technology: XHP™3 Topology: IGBT half-bridge Type of semiconductor module: IGBT Case: AG-XHP100-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IPG20N04S412ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IPG20N04S412ATMA1 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPG20N04S4L08ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IPG20N04S4L08ATMA1 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPG20N04S4L11AATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IPG20N04S4L11AATMA1 |
auf Bestellung 35000 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS70802EPAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 3A; Ch: 2; N-Channel; SMD; PG-TSDSO-14 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 3A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: PG-TSDSO-14 On-state resistance: 39.6mΩ Kind of package: reel; tape Supply voltage: 4.1...28V DC Technology: PROFET™+2 Operating temperature: -40...150°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY15B201QN-50SXE | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 1.8÷3.6VDC; 50MHz; SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 1Mb FRAM Interface: SPI Memory organisation: 128kx8bit Supply voltage: 1.8...3.6V DC Clock frequency: 50MHz Case: SOIC8 Mounting: SMD Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
BTS5030-2EKA |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; PG-DSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14
On-state resistance: 60mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Power dissipation: 2.1W
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; PG-DSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14
On-state resistance: 60mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Power dissipation: 2.1W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTS5016-2EKA |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 28mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 28mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTS50451EJAXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-8-EP
On-state resistance: 45mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Operating temperature: -40...150°C
Power dissipation: 1.6W
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-8-EP
On-state resistance: 45mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Operating temperature: -40...150°C
Power dissipation: 1.6W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTS50452EKAXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.49 EUR |
BTS500101TADATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 5.38 EUR |
BTS500151TADATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 4.80 EUR |
BTS50121EKBXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.86 EUR |
BTS50201EKAXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.52 EUR |
IPI180N10N3GXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.60 EUR |
52+ | 1.39 EUR |
74+ | 0.97 EUR |
77+ | 0.93 EUR |
IPP180N10N3GXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IAUA180N10S5N029AUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB180N10S402ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 4.05 EUR |
IRG4RC10KDTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR38265MTRPBFAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Operating temperature: -40...125°C
Case: PQFN5X7
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: I2C; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: POL converter
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Operating temperature: -40...125°C
Case: PQFN5X7
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: I2C; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: POL converter
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62136ESL-45ZSXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC
Kind of package: in-tray
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62138FLL-45SXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62138FLL-45SXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62146ELL-45ZSXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62146ESL-45ZSXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC
Kind of package: in-tray
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62146G30-45BVXIT |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62146G30-45ZSXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Kind of package: in-tray
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62147G-45ZSXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62147G30-45B2XI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Kind of package: in-tray
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS308PEH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 0.5W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 0.5W
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.52 EUR |
166+ | 0.43 EUR |
239+ | 0.30 EUR |
278+ | 0.26 EUR |
725+ | 0.10 EUR |
770+ | 0.09 EUR |
BSL308PEH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6; ESD
Type of transistor: P-MOSFET x2
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Power dissipation: 0.5W
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6; ESD
Type of transistor: P-MOSFET x2
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Power dissipation: 0.5W
auf Bestellung 1996 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.69 EUR |
136+ | 0.53 EUR |
152+ | 0.47 EUR |
224+ | 0.32 EUR |
237+ | 0.30 EUR |
500+ | 0.29 EUR |
BSS314PEH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 0.5W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 0.5W
auf Bestellung 3024 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
304+ | 0.24 EUR |
426+ | 0.17 EUR |
497+ | 0.14 EUR |
910+ | 0.08 EUR |
962+ | 0.07 EUR |
2500+ | 0.07 EUR |
S29GL01GS12DHIV10 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL01GS12DHIV20 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL01GS12DHVV10 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL01GS12TFIV10 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: TSOP56
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: TSOP56
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL01GS12TFIV20 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: TSOP56
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: TSOP56
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL01GS12TFVV20 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...105°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: TSOP56
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...105°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: TSOP56
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70GL02GS12FHBV20 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Application: automotive
Kind of package: in-tray
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Application: automotive
Kind of package: in-tray
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70GL02GS12FHBV23 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Application: automotive
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Application: automotive
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70GL02GS12FHIV13 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70GL02GS12FHIV20 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70GL02GS12FHIV23 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70GL02GS12FHVV20 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70GL02GS12FHVV23 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL01GS11DHB010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL01GS11DHI010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Output voltage: 2.7...3.6V DC
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Output voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL01GS11DHI020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Output voltage: 2.7...3.6V DC
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Output voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL01GS11DHIV13 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Output voltage: 1.65...3.6V DC
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Output voltage: 1.65...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL01GS11DHIV20 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Output voltage: 1.65...3.6V DC
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Output voltage: 1.65...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL01GS11DHIV23 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Output voltage: 1.65...3.6V DC
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Output voltage: 1.65...3.6V DC
Produkt ist nicht verfügbar
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S29GL01GS11DHV010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29GL01GS11DHV013 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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S29GL01GS11DHV020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
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S29GL01GS11DHV023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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2EDL23N06PJXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; -2.5÷1.8A
Technology: EiceDRIVER™
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V
Output current: -2.5...1.8A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; -2.5÷1.8A
Technology: EiceDRIVER™
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V
Output current: -2.5...1.8A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Produkt ist nicht verfügbar
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IPD033N06NATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.10 EUR |
BAT5403WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SOD323
Mounting: SMD
Max. forward impulse current: 0.6A
Load current: 0.2A
Power dissipation: 0.23W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SOD323
Mounting: SMD
Max. forward impulse current: 0.6A
Load current: 0.2A
Power dissipation: 0.23W
auf Bestellung 4374 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
291+ | 0.25 EUR |
366+ | 0.20 EUR |
408+ | 0.18 EUR |
866+ | 0.08 EUR |
916+ | 0.08 EUR |
3000+ | 0.08 EUR |
FF450R06ME3 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge,NTC thermistor; 1.25kW
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 1.25kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-3
Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge,NTC thermistor; 1.25kW
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 1.25kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-3
Produkt ist nicht verfügbar
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BSF450NE7NH3XUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 15A; 18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 15A
Power dissipation: 18W
Case: CanPAK™ S; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 15A; 18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 15A
Power dissipation: 18W
Case: CanPAK™ S; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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FF450R33T3E3B5BPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge; Urmax: 3.3kV; Ic: 450A
Max. off-state voltage: 3.3kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Electrical mounting: screw
Mechanical mounting: screw
Technology: XHP™3
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-XHP100-6
Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge; Urmax: 3.3kV; Ic: 450A
Max. off-state voltage: 3.3kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Electrical mounting: screw
Mechanical mounting: screw
Technology: XHP™3
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-XHP100-6
Produkt ist nicht verfügbar
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IPG20N04S412ATMA1 |
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auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.65 EUR |
IPG20N04S4L08ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPG20N04S4L08ATMA1
Category: Transistors - Unclassified
Description: IPG20N04S4L08ATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.82 EUR |
IPG20N04S4L11AATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPG20N04S4L11AATMA1
Category: Transistors - Unclassified
Description: IPG20N04S4L11AATMA1
auf Bestellung 35000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.67 EUR |
BTS70802EPAXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 2; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 39.6mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 2; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 39.6mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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CY15B201QN-50SXE |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 1.8÷3.6VDC; 50MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 1.8...3.6V DC
Clock frequency: 50MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 1.8÷3.6VDC; 50MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 1.8...3.6V DC
Clock frequency: 50MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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