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DD600N18KHPSA1 DD600N18KHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9F08533614469&compId=DD600N18K.pdf?ci_sign=f10963049ff88079e530079ed9b25fbb721c5e8a Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 600A; BG-PB60AT-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 600A
Case: BG-PB60AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BTS5030-2EKA BTS5030-2EKA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE4F48132938259&compId=BTS5030-2EKA.pdf?ci_sign=33e059d647c96a6ae9b9d65e9205d4cc4a8f0d7c Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; PG-DSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14
On-state resistance: 60mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Power dissipation: 2.1W
Produkt ist nicht verfügbar
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BTS5016-2EKA BTS5016-2EKA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986CDEB37B6469&compId=BTS5016-2EKA.pdf?ci_sign=83c8bc9d42f43a784bc704bee2630f9102c3dd63 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 28mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Produkt ist nicht verfügbar
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BTS50451EJAXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE5172C044FE259&compId=BTS5045-1EJA.pdf?ci_sign=9030c87778744422a27802869fa8150b02464e74 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-8-EP
On-state resistance: 45mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Operating temperature: -40...150°C
Power dissipation: 1.6W
Produkt ist nicht verfügbar
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BTS50452EKAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS5045-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa4113e5d1075 Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.49 EUR
Mindestbestellmenge: 2500
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BTS500101TADATMA2 INFINEON TECHNOLOGIES BTS50010-1TA_rev1.2_12-5-17.pdf Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+5.38 EUR
Mindestbestellmenge: 1000
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BTS500151TADATMA2 INFINEON TECHNOLOGIES Infineon-BTS50015-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36c510460f Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+4.80 EUR
Mindestbestellmenge: 1000
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BTS50121EKBXUMA1 INFINEON TECHNOLOGIES Infineon-BTS5012-1EKB-DS-v02_00-EN.pdf?fileId=5546d4625a888733015aa42c52d5113a Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.86 EUR
Mindestbestellmenge: 2500
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BTS50201EKAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS5020-1EKA-DS-v02_02-EN.pdf?fileId=5546d46259d9a4bf015a84fd1c7575cc Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.52 EUR
Mindestbestellmenge: 2500
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IPI180N10N3GXKSA1 IPI180N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAF649593FC11C&compId=IPI180N10N3G-DTE.pdf?ci_sign=bdd5ad7ac5aa3556edd4940f3d6af7743d74344f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.60 EUR
52+1.39 EUR
74+0.97 EUR
77+0.93 EUR
Mindestbestellmenge: 45
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IPP180N10N3GXKSA1 IPP180N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBA9C0C681411C&compId=IPP180N10N3G-dte.pdf?ci_sign=701544aaf512046aa829ae971b208ce0aa5ac872 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IAUA180N10S5N029AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB180N10S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPB180N10S4_02-DS-v01_00-en.pdf?fileId=db3a30433d1d0bbe013d2129cf8a2f88 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+4.05 EUR
Mindestbestellmenge: 1000
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IRG4RC10KDTRPBF IRG4RC10KDTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEFAA8ACB0415EA&compId=IRG4RC10KDTRPBF.pdf?ci_sign=2087d15123c50192bd1e99a508f775700674dc79 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Features of semiconductor devices: integrated anti-parallel diode
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IR38265MTRPBFAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE8959CE622808BB3D5&compId=IR38265M.pdf?ci_sign=1dbb08e49f01815b39ec04109f1da92968a5f623 Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Operating temperature: -40...125°C
Case: PQFN5X7
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: I2C; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: POL converter
Mounting: SMD
Produkt ist nicht verfügbar
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CY62136ESL-45ZSXI INFINEON TECHNOLOGIES Infineon-CY62136ESL_MoBL(R)_2-Mbit_(128_K_X_16)_Static_RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeeecb32e8 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC
Kind of package: in-tray
Produkt ist nicht verfügbar
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CY62138FLL-45SXI INFINEON TECHNOLOGIES Infineon-CY62138F_MOBL_2_MBIT_(256K_X_8)_STATIC_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9f27325d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Produkt ist nicht verfügbar
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CY62138FLL-45SXIT INFINEON TECHNOLOGIES Infineon-CY62138F_MOBL_2_MBIT_(256K_X_8)_STATIC_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9f27325d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY62146ELL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62146E_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea9213270 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY62146ESL-45ZSXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC
Kind of package: in-tray
Produkt ist nicht verfügbar
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CY62146G30-45BVXIT INFINEON TECHNOLOGIES Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY62146G30-45ZSXI INFINEON TECHNOLOGIES Infineon-CY62146G_CY62146GE_CY62146GSL_CY62146GESL_MoBL_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed92ff45ad1&utm_source=cypress&utm_medium=referral&u Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Kind of package: in-tray
Produkt ist nicht verfügbar
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CY62147G-45ZSXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY62147G30-45B2XI INFINEON TECHNOLOGIES Infineon-CY62147G_CY621472G_CY62147GE_MoBL_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecde615486b&utm_source=cypress&utm_medium=referral&utm_camp Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Kind of package: in-tray
Produkt ist nicht verfügbar
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BSS308PEH6327XTSA1 BSS308PEH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928895033F11CC&compId=BSS308PEH6327XTSA1-DTE.pdf?ci_sign=2bf63919c5470e9e78796983318a7cd255dfb425 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 0.5W
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.52 EUR
166+0.43 EUR
239+0.30 EUR
278+0.26 EUR
725+0.10 EUR
770+0.09 EUR
Mindestbestellmenge: 139
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BSL308PEH6327XTSA1 BSL308PEH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA913D1D61B311CC&compId=BSL308PEH6327XTSA1-DTE.pdf?ci_sign=2926dcc98cc2f16e4e3030d97715eb942d9c5794 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6; ESD
Type of transistor: P-MOSFET x2
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Power dissipation: 0.5W
auf Bestellung 1996 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
136+0.53 EUR
152+0.47 EUR
224+0.32 EUR
237+0.30 EUR
500+0.29 EUR
Mindestbestellmenge: 105
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BSS314PEH6327XTSA1 BSS314PEH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928A4924BFF1CC&compId=BSS314PEH6327XTSA1-dte.pdf?ci_sign=baff2f0168140fd475d707cb4164bca628a06e7f Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 0.5W
auf Bestellung 3024 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
304+0.24 EUR
426+0.17 EUR
497+0.14 EUR
910+0.08 EUR
962+0.07 EUR
2500+0.07 EUR
Mindestbestellmenge: 200
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S29GL01GS12DHIV10 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
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S29GL01GS12DHIV20 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
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S29GL01GS12DHVV10 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
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S29GL01GS12TFIV10 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: TSOP56
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
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S29GL01GS12TFIV20 INFINEON TECHNOLOGIES S29GL_128S_01GS_00.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: TSOP56
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS12TFVV20 INFINEON TECHNOLOGIES S29GL_128S_01GS_00.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...105°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: TSOP56
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHBV20 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Application: automotive
Kind of package: in-tray
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHBV23 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Application: automotive
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHIV13 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHIV20 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHIV23 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHVV20 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHVV23 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS11DHB010 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS11DHI010 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Output voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS11DHI020 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Output voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS11DHIV13 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Output voltage: 1.65...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS11DHIV20 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Output voltage: 1.65...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS11DHIV23 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Output voltage: 1.65...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS11DHV010 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS11DHV013 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS11DHV020 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS11DHV023 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDL23N06PJXUMA1 2EDL23N06PJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD85B5CF77038BF&compId=2EDL23x06xx.pdf?ci_sign=b1ad70b6d943ae40ef982d8b7da102dac65c5aea Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; -2.5÷1.8A
Technology: EiceDRIVER™
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V
Output current: -2.5...1.8A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Produkt ist nicht verfügbar
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IPD033N06NATMA1 INFINEON TECHNOLOGIES Infineon-IPD033N06N-DS-v02_00-EN.pdf?fileId=5546d4625b62cd8a015ba517c34e6629 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.10 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
BAT5403WE6327HTSA1 BAT5403WE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDC5C0EE5B1820&compId=Infineon-BAT54SERIES-DS-v01_01-en.pdf?ci_sign=9d415fac4e4038a2e5066020b8f03e621cda1497 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SOD323
Mounting: SMD
Max. forward impulse current: 0.6A
Load current: 0.2A
Power dissipation: 0.23W
auf Bestellung 4374 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
291+0.25 EUR
366+0.20 EUR
408+0.18 EUR
866+0.08 EUR
916+0.08 EUR
3000+0.08 EUR
Mindestbestellmenge: 209
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FF450R06ME3 FF450R06ME3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E51EA023EE8469&compId=FF450R06ME3.pdf?ci_sign=9139935a6e53df2f719cfd81b2f1553e8798a0a8 Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge,NTC thermistor; 1.25kW
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 1.25kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-3
Produkt ist nicht verfügbar
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BSF450NE7NH3XUMA1 BSF450NE7NH3XUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DDAA4129A411C&compId=BSF450NE7NH3-DTE.pdf?ci_sign=c06da7dc27e6cb8fcb421beb0727bad5d85a6bb3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 15A; 18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 15A
Power dissipation: 18W
Case: CanPAK™ S; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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FF450R33T3E3B5BPSA1 INFINEON TECHNOLOGIES Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9 Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge; Urmax: 3.3kV; Ic: 450A
Max. off-state voltage: 3.3kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Electrical mounting: screw
Mechanical mounting: screw
Technology: XHP™3
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-XHP100-6
Produkt ist nicht verfügbar
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IPG20N04S412ATMA1 INFINEON TECHNOLOGIES Infineon-IPG20N04S4_12-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf60c03c6c05 Category: Transistors - Unclassified
Description: IPG20N04S412ATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.65 EUR
Mindestbestellmenge: 5000
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IPG20N04S4L08ATMA1 INFINEON TECHNOLOGIES Infineon-IPG20N04S4L_08-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf634e6f6c0f Category: Transistors - Unclassified
Description: IPG20N04S4L08ATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.82 EUR
Mindestbestellmenge: 5000
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IPG20N04S4L11AATMA1 INFINEON TECHNOLOGIES IPG20N04S4L-11A_DS_1_0.pdf?fileId=5546d4614815da88014821772fae00b5 Category: Transistors - Unclassified
Description: IPG20N04S4L11AATMA1
auf Bestellung 35000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.67 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BTS70802EPAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS7080-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625e763904015e941bf21e2dbe Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 2; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 39.6mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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DD600N18KHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9F08533614469&compId=DD600N18K.pdf?ci_sign=f10963049ff88079e530079ed9b25fbb721c5e8a
DD600N18KHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 600A; BG-PB60AT-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 600A
Case: BG-PB60AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BTS5030-2EKA pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE4F48132938259&compId=BTS5030-2EKA.pdf?ci_sign=33e059d647c96a6ae9b9d65e9205d4cc4a8f0d7c
BTS5030-2EKA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; PG-DSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14
On-state resistance: 60mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Power dissipation: 2.1W
Produkt ist nicht verfügbar
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BTS5016-2EKA pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986CDEB37B6469&compId=BTS5016-2EKA.pdf?ci_sign=83c8bc9d42f43a784bc704bee2630f9102c3dd63
BTS5016-2EKA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 28mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Produkt ist nicht verfügbar
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BTS50451EJAXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE5172C044FE259&compId=BTS5045-1EJA.pdf?ci_sign=9030c87778744422a27802869fa8150b02464e74
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-8-EP
On-state resistance: 45mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Operating temperature: -40...150°C
Power dissipation: 1.6W
Produkt ist nicht verfügbar
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BTS50452EKAXUMA1 Infineon-BTS5045-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa4113e5d1075
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.49 EUR
Mindestbestellmenge: 2500
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BTS500101TADATMA2 BTS50010-1TA_rev1.2_12-5-17.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+5.38 EUR
Mindestbestellmenge: 1000
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BTS500151TADATMA2 Infineon-BTS50015-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36c510460f
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+4.80 EUR
Mindestbestellmenge: 1000
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BTS50121EKBXUMA1 Infineon-BTS5012-1EKB-DS-v02_00-EN.pdf?fileId=5546d4625a888733015aa42c52d5113a
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.86 EUR
Mindestbestellmenge: 2500
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BTS50201EKAXUMA1 Infineon-BTS5020-1EKA-DS-v02_02-EN.pdf?fileId=5546d46259d9a4bf015a84fd1c7575cc
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.52 EUR
Mindestbestellmenge: 2500
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IPI180N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAF649593FC11C&compId=IPI180N10N3G-DTE.pdf?ci_sign=bdd5ad7ac5aa3556edd4940f3d6af7743d74344f
IPI180N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.60 EUR
52+1.39 EUR
74+0.97 EUR
77+0.93 EUR
Mindestbestellmenge: 45
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IPP180N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBA9C0C681411C&compId=IPP180N10N3G-dte.pdf?ci_sign=701544aaf512046aa829ae971b208ce0aa5ac872
IPP180N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IAUA180N10S5N029AUMA1 Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB180N10S402ATMA1 Infineon-IPB180N10S4_02-DS-v01_00-en.pdf?fileId=db3a30433d1d0bbe013d2129cf8a2f88
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+4.05 EUR
Mindestbestellmenge: 1000
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IRG4RC10KDTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEFAA8ACB0415EA&compId=IRG4RC10KDTRPBF.pdf?ci_sign=2087d15123c50192bd1e99a508f775700674dc79
IRG4RC10KDTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IR38265MTRPBFAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE8959CE622808BB3D5&compId=IR38265M.pdf?ci_sign=1dbb08e49f01815b39ec04109f1da92968a5f623
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Operating temperature: -40...125°C
Case: PQFN5X7
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: I2C; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: POL converter
Mounting: SMD
Produkt ist nicht verfügbar
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CY62136ESL-45ZSXI Infineon-CY62136ESL_MoBL(R)_2-Mbit_(128_K_X_16)_Static_RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeeecb32e8
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC
Kind of package: in-tray
Produkt ist nicht verfügbar
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CY62138FLL-45SXI Infineon-CY62138F_MOBL_2_MBIT_(256K_X_8)_STATIC_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9f27325d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Produkt ist nicht verfügbar
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CY62138FLL-45SXIT Infineon-CY62138F_MOBL_2_MBIT_(256K_X_8)_STATIC_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9f27325d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY62146ELL-45ZSXIT Infineon-CY62146E_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea9213270
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY62146ESL-45ZSXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC
Kind of package: in-tray
Produkt ist nicht verfügbar
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CY62146G30-45BVXIT
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY62146G30-45ZSXI Infineon-CY62146G_CY62146GE_CY62146GSL_CY62146GESL_MoBL_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed92ff45ad1&utm_source=cypress&utm_medium=referral&u
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Kind of package: in-tray
Produkt ist nicht verfügbar
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CY62147G-45ZSXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY62147G30-45B2XI Infineon-CY62147G_CY621472G_CY62147GE_MoBL_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecde615486b&utm_source=cypress&utm_medium=referral&utm_camp
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Kind of package: in-tray
Produkt ist nicht verfügbar
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BSS308PEH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928895033F11CC&compId=BSS308PEH6327XTSA1-DTE.pdf?ci_sign=2bf63919c5470e9e78796983318a7cd255dfb425
BSS308PEH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 0.5W
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.52 EUR
166+0.43 EUR
239+0.30 EUR
278+0.26 EUR
725+0.10 EUR
770+0.09 EUR
Mindestbestellmenge: 139
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BSL308PEH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA913D1D61B311CC&compId=BSL308PEH6327XTSA1-DTE.pdf?ci_sign=2926dcc98cc2f16e4e3030d97715eb942d9c5794
BSL308PEH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6; ESD
Type of transistor: P-MOSFET x2
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Power dissipation: 0.5W
auf Bestellung 1996 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
136+0.53 EUR
152+0.47 EUR
224+0.32 EUR
237+0.30 EUR
500+0.29 EUR
Mindestbestellmenge: 105
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BSS314PEH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928A4924BFF1CC&compId=BSS314PEH6327XTSA1-dte.pdf?ci_sign=baff2f0168140fd475d707cb4164bca628a06e7f
BSS314PEH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 0.5W
auf Bestellung 3024 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
304+0.24 EUR
426+0.17 EUR
497+0.14 EUR
910+0.08 EUR
962+0.07 EUR
2500+0.07 EUR
Mindestbestellmenge: 200
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S29GL01GS12DHIV10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
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S29GL01GS12DHIV20 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS12DHVV10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS12TFIV10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: TSOP56
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS12TFIV20 S29GL_128S_01GS_00.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: TSOP56
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS12TFVV20 S29GL_128S_01GS_00.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...105°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Gb FLASH
Mounting: SMD
Case: TSOP56
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHBV20 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Application: automotive
Kind of package: in-tray
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHBV23 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Application: automotive
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHIV13 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHIV20 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHIV23 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHVV20 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Kind of package: in-tray
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHVV23 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS11DHB010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS11DHI010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Output voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS11DHI020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Output voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS11DHIV13 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Output voltage: 1.65...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS11DHIV20 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Output voltage: 1.65...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS11DHIV23 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Output voltage: 1.65...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS11DHV010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS11DHV013 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS11DHV020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS11DHV023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDL23N06PJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD85B5CF77038BF&compId=2EDL23x06xx.pdf?ci_sign=b1ad70b6d943ae40ef982d8b7da102dac65c5aea
2EDL23N06PJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; -2.5÷1.8A
Technology: EiceDRIVER™
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V
Output current: -2.5...1.8A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD033N06NATMA1 Infineon-IPD033N06N-DS-v02_00-EN.pdf?fileId=5546d4625b62cd8a015ba517c34e6629
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.10 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
BAT5403WE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDC5C0EE5B1820&compId=Infineon-BAT54SERIES-DS-v01_01-en.pdf?ci_sign=9d415fac4e4038a2e5066020b8f03e621cda1497 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16
BAT5403WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SOD323
Mounting: SMD
Max. forward impulse current: 0.6A
Load current: 0.2A
Power dissipation: 0.23W
auf Bestellung 4374 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
291+0.25 EUR
366+0.20 EUR
408+0.18 EUR
866+0.08 EUR
916+0.08 EUR
3000+0.08 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
FF450R06ME3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E51EA023EE8469&compId=FF450R06ME3.pdf?ci_sign=9139935a6e53df2f719cfd81b2f1553e8798a0a8
FF450R06ME3
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge,NTC thermistor; 1.25kW
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 1.25kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-3
Produkt ist nicht verfügbar
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BSF450NE7NH3XUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DDAA4129A411C&compId=BSF450NE7NH3-DTE.pdf?ci_sign=c06da7dc27e6cb8fcb421beb0727bad5d85a6bb3
BSF450NE7NH3XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 15A; 18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 15A
Power dissipation: 18W
Case: CanPAK™ S; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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FF450R33T3E3B5BPSA1 Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge; Urmax: 3.3kV; Ic: 450A
Max. off-state voltage: 3.3kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Electrical mounting: screw
Mechanical mounting: screw
Technology: XHP™3
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-XHP100-6
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IPG20N04S412ATMA1 Infineon-IPG20N04S4_12-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf60c03c6c05
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPG20N04S412ATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.65 EUR
Mindestbestellmenge: 5000
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IPG20N04S4L08ATMA1 Infineon-IPG20N04S4L_08-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf634e6f6c0f
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPG20N04S4L08ATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.82 EUR
Mindestbestellmenge: 5000
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IPG20N04S4L11AATMA1 IPG20N04S4L-11A_DS_1_0.pdf?fileId=5546d4614815da88014821772fae00b5
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPG20N04S4L11AATMA1
auf Bestellung 35000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.67 EUR
Mindestbestellmenge: 5000
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BTS70802EPAXUMA1 Infineon-BTS7080-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625e763904015e941bf21e2dbe
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 2; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 39.6mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
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