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IPB65R110CFDAATMA1 INFINEON TECHNOLOGIES Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 31.2A; 277.8W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 118nC
Electrical mounting: SMT
Application: automotive industry
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1000+4.68 EUR
Mindestbestellmenge: 1000
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IPW65R110CFDFKSA2 INFINEON TECHNOLOGIES Infineon-IPX65R110CFD-DS-v02_06-en.pdf?fileId=db3a30433004641301306abd8e2041b1 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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30+5.31 EUR
120+4.78 EUR
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BSZ068N06NSATMA1 BSZ068N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1C1ABF3B811C&compId=BSZ068N06NS-DTE.pdf?ci_sign=fa3ecd472cbb88f8d166e7c20f1c2f8d458bfbec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 46W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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BSB028N06NN3GXUMA1 BSB028N06NN3GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C21169B999611C&compId=BSB028N06NN3G-DTE.pdf?ci_sign=9f74ee56527681bf6720ac86acff4685671d1a87 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 78W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 78W
Case: CanPAK™ M; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC028N06LS3GATMA1 BSC028N06LS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C28F27079C611C&compId=BSC028N06LS3G-DTE.pdf?ci_sign=bbe9fc3061cb470e92c25d928fd3834c48baac10 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPD038N06N3GATMA1 IPD038N06N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A699276DED30A11C&compId=IPD038N06N3G-DTE.pdf?ci_sign=bd1362c96028dc62407e059fda18143201d9fbe8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPD088N06N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD088N06N3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b2351db4d5c Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
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2500+0.51 EUR
Mindestbestellmenge: 2500
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IPB031N08N5ATMA1 IPB031N08N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB151D4F9211C&compId=IPB031N08N5-DTE.pdf?ci_sign=3159f32d96288cc61656ed143c70a029107448c2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB036N12N3GATMA1 IPB036N12N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBD3543DCCA11C&compId=IPB036N12N3G-DTE.pdf?ci_sign=f6e85fe1d433fdb0362bcc3083d1806c0c8f5354 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 180A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 120V
Drain current: 180A
Power dissipation: 300W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB038N12N3GATMA1 IPB038N12N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBB68318E8811C&compId=IPB038N12N3G-DTE.pdf?ci_sign=1ce7670095e99e047c4caf194cc03ca588fb26fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 120V
Drain current: 120A
Power dissipation: 300W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPB031NE7N3GATMA1 IPB031NE7N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5DD52B98B211C&compId=IPB031NE7N3G-DTE.pdf?ci_sign=cdda49cb192f2d913b204bf3b9535fc7bc4e1788 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRLHM630TRPBF IRLHM630TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222776C4E3F4BF1A303005056AB0C4F&compId=irlhm630pbf.pdf?ci_sign=170c72500cf1dc0c0ea25a0be851ac421b66adf6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRF7862TRPBF IRF7862TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AD030E88B4F1A303005056AB0C4F&compId=irf7862pbf.pdf?ci_sign=84fcf72887f95ada0b37c5ae9daf8ac8c5825d63 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8321TRPBF IRFH8321TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCCBDA836655EA&compId=IRFH8321TRPBF.pdf?ci_sign=8af00b2029e222c13b14e3ae39a6c3a7baa0f4ae Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.4W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH8325TRPBF IRFH8325TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BA7452A666F1A303005056AB0C4F&compId=irfh8325pbf.pdf?ci_sign=a76385c090eb515f3739add9718f7fb10d861c99 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BSL308PEH6327XTSA1 BSL308PEH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA913D1D61B311CC&compId=BSL308PEH6327XTSA1-DTE.pdf?ci_sign=2926dcc98cc2f16e4e3030d97715eb942d9c5794 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6; ESD
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET x2
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 80mΩ
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-TSOP-6
Kind of channel: enhancement
Version: ESD
Mounting: SMD
auf Bestellung 1942 Stücke:
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120+0.6 EUR
172+0.42 EUR
211+0.34 EUR
400+0.29 EUR
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BSZ146N10LS5ATMA1 INFINEON TECHNOLOGIES infineon-bsz146n10ls5-datasheet-en.pdf?fileId=5546d4625696ed760156e6c1a0a327fc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 40A; 52W; SMT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: N
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 52W
Gate-source voltage: 20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
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5000+0.67 EUR
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IPN50R1K4CEATMA1 INFINEON TECHNOLOGIES Infineon-IPN50R1K4CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac894e25aa7 Category: Transistors - Unclassified
Description: IPN50R1K4CEATMA1
auf Bestellung 78000 Stücke:
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3000+0.23 EUR
Mindestbestellmenge: 3000
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IRFP4310ZPBFXKMA1 INFINEON TECHNOLOGIES Infineon_IRFP4310Z_DataSheet_v01_01_EN-3363303.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 134A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 134A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS25752LTRPBF IRS25752LTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE790BCF6A24C542745&compId=IRS25752ltrpbf.pdf?ci_sign=cab2f992ac3e11dcc78a977da4ae432757a0c1b3 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SOT23-6
Output current: -240...160mA
Number of channels: 1
Supply voltage: 10...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 225ns
Turn-off time: 255ns
Produkt ist nicht verfügbar
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IRS2302SPBF IRS2302SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA7EA488D59D3D7&compId=IRS2302SPBF.pdf?ci_sign=3c1e65303fb8c7d19a0206b3213cfa65210e5079 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 650ns
Turn-off time: 200ns
Power: 625mW
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BSP317PH6327XTSA1 BSP317PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9219ACB51A51CC&compId=BSP317PH6327XTSA1-dte.pdf?ci_sign=a936721dcc5d1bbb427c56fd5eca3034a2449eee Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Kind of channel: enhancement
Case: PG-SOT223
Mounting: SMD
Type of transistor: P-MOSFET
Technology: SIPMOS™
Drain-source voltage: -250V
Drain current: -0.43A
On-state resistance: 4Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
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Lieferzeit 14-21 Tag (e)
64+1.13 EUR
95+0.76 EUR
140+0.51 EUR
250+0.44 EUR
500+0.4 EUR
1000+0.36 EUR
2000+0.34 EUR
Mindestbestellmenge: 64
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IPD122N10N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD122N10N3_G-DS-v02_03-en.pdf?fileId=db3a30432239cccd0122604a0b2e7f65 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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53+1.37 EUR
63+1.15 EUR
68+1.06 EUR
73+0.98 EUR
81+0.89 EUR
100+0.84 EUR
200+0.79 EUR
500+0.73 EUR
1000+0.72 EUR
Mindestbestellmenge: 53
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IPB65R190C7ATMA1 IPB65R190C7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2FB74953A71BF&compId=IPB65R190C7-DTE.pdf?ci_sign=de5cd77f6bd4c6f81d65e42a03bfc2b86172d885 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S29GL01GS12DHIV10 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL01GS12DHIV20 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL01GS12DHVV10 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
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S29GL01GS12TFIV10 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: TSOP56
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL01GS12TFIV20 INFINEON TECHNOLOGIES S29GL_128S_01GS_00.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: TSOP56
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL01GS12TFVV20 INFINEON TECHNOLOGIES S29GL_128S_01GS_00.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: TSOP56
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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S70GL02GS12FHBV20 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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S70GL02GS12FHBV23 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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S70GL02GS12FHIV13 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHIV20 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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S70GL02GS12FHIV23 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHVV20 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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S70GL02GS12FHVV23 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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BAT6302VH6327XTSA1 BAT6302VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E02D7CE8486469&compId=BAT6302VH6327XTSA1.pdf?ci_sign=37345c6b5c4c72fa5d20b81471d690570a6d7645 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 3V; 0.1A; 100mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.1W
auf Bestellung 410 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
147+0.49 EUR
173+0.41 EUR
317+0.23 EUR
Mindestbestellmenge: 117
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ISC240P06LMATMA1 INFINEON TECHNOLOGIES Infineon-ISC240P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4b2c536ec Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 59A; Idm: 236A; 188W
Case: PG-TDSON-8
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Drain current: 59A
Drain-source voltage: 60V
Power dissipation: 188W
Pulsed drain current: 236A
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Produkt ist nicht verfügbar
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BFR35APE6327HTSA1 BFR35APE6327HTSA1 INFINEON TECHNOLOGIES INFNS22473-1.pdf?t.download=true&u=5oefqw Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 280mW; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: NPN
Kind of transistor: RF
Collector current: 45mA
Power dissipation: 0.28W
Collector-emitter voltage: 15V
Current gain: 70...140
Frequency: 5GHz
Polarisation: bipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BSP135IXTSA1 INFINEON TECHNOLOGIES Infineon-BSP135I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a4188551361e Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
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1000+0.2 EUR
Mindestbestellmenge: 1000
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IRF7842TRPBF IRF7842TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AC935A3E8EF1A303005056AB0C4F&compId=irf7842pbf.pdf?ci_sign=744a801cb6d39a17fc5323a2cd421e1967a6254c description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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59+1.22 EUR
72+1 EUR
81+0.89 EUR
100+0.8 EUR
Mindestbestellmenge: 44
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FF100R12W1T7EB11BPSA1 INFINEON TECHNOLOGIES FF100R12W1T7EB11BPSA1.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: for UPS; Inverter; motors; photovoltaics
Semiconductor structure: common emitter; transistor/transistor
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Case: AG-EASY1B
Topology: IGBT x2; NTC thermistor
Produkt ist nicht verfügbar
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PVI5013RSPBF PVI5013RSPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE789CF03423360A745&compId=pvi5013r.pdf?ci_sign=2896a267ac238fb8d92b31fc582bd7c80dbfef82 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Manufacturer series: PVI5013RPbF
Turn-off time: 25µs
Turn-on time: 5ms
Number of channels: 2
Insulation voltage: 3.75kV
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5+14.3 EUR
Mindestbestellmenge: 5
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IPB65R190CFDATMA1 IPB65R190CFDATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2FCE3F865B1BF&compId=IPB65R190CFD-DTE.pdf?ci_sign=29fd38479d7b134b2403a81f7a99daed4ae2ab33 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB65R190CFDAATMA1 INFINEON TECHNOLOGIES Infineon-IPX65R190CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139afa2346920a1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 17.5A; 151W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 171mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 4000 Stücke:
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1000+2.76 EUR
Mindestbestellmenge: 1000
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IPB65R190CFDATMA2 INFINEON TECHNOLOGIES DS_IPX65R190CFD__2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432fd0c54a012fded065a8309b Category: Transistors - Unclassified
Description: IPB65R190CFDATMA2
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+2.17 EUR
Mindestbestellmenge: 1000
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IPB65R065C7ATMA1 IPB65R065C7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2EB2A880771BF&compId=IPB65R065C7-DTE.pdf?ci_sign=fea8ec4937df9f9dc590a5a6483e4546548d8ff6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7420TRPBF IRF7420TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A2D620B293F1A303005056AB0C4F&compId=irf7420pbf.pdf?ci_sign=6253395e5caaefe09fbe324a35a465519a31e9a5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB180N06S4H1ATMA2 INFINEON TECHNOLOGIES Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 250W
Case: PG-TO263-7-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Produkt ist nicht verfügbar
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BCR401WH6327XTSA1
+1
 		BCR401WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE994C27E55264558BF&compId=BCR401W.pdf?ci_sign=6541f52c2999ab839e95193870c4f087e5a9dafd Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Number of channels: 1
Case: SOT343
Kind of integrated circuit: current regulator; LED driver
Operating voltage: 1.2...18V DC
Integrated circuit features: linear dimming
Topology: single transistor
Type of integrated circuit: driver
Output current: 10...60mA
Produkt ist nicht verfügbar
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IMBG120R030M1HXTMA1 INFINEON TECHNOLOGIES Infineon-IMBG120R030M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0eca774325c Category: Transistors - Unclassified
Description: IMBG120R030M1HXTMA1
auf Bestellung 1000 Stücke:
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1000+13.86 EUR
Mindestbestellmenge: 1000
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BCR430UXTSA2 INFINEON TECHNOLOGIES Infineon-BCR%20430U-DataSheet-v01_03-EN.pdf?fileId=5546d4627506bb32017541202bc15395 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Topology: single transistor
Case: PG-SOT23-6
Output current: 20...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Operating voltage: 6...42V DC
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Mounting: SMD
Produkt ist nicht verfügbar
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IPD33CN10NGATMA1 INFINEON TECHNOLOGIES Infineon-IPP35CN10N-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42b457b44b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 108A; 58W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 108A
Power dissipation: 58W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C1371KV33-100AXI INFINEON TECHNOLOGIES Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; -40÷85°C
Memory organisation: 512kx36bit
Kind of package: in-tray
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TQFP100
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 18Mb SRAM
Frequency: 100MHz
Produkt ist nicht verfügbar
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IRF250P224 IRF250P224 INFINEON TECHNOLOGIES IRF250P224.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 203nC
Kind of package: tube
Technology: StrongIRFET™
Produkt ist nicht verfügbar
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IRFP4368PBF IRFP4368PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C06FF1A6F5005056AB5A8F&compId=irfp4368pbf.pdf?ci_sign=9eb47e6406d9302930fa1feedb7fd32221717365 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLS3813TRLPBF IRLS3813TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC004893E39A143&compId=IRLS3813TRLPBF.pdf?ci_sign=d5c73a2dcebb5123fbcd021d4dd0c7ce98082d0b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 156A; 195W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 156A
Power dissipation: 195W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
On-state resistance: 1.95mΩ
Gate-source voltage: ±20V
Gate charge: 55nC
Produkt ist nicht verfügbar
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IRLS3034TRLPBF IRLS3034TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF1363FB77DB5EA&compId=IRLS3034TRLPBF.pdf?ci_sign=b1cd31c779cd5fbc0f101d0a52e7c4beab36a4a9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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AUIRLS3034 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8B1A083EA96143&compId=AUIRLS3034.pdf?ci_sign=ff5db222f1e89365072581b30ecf44c64c41980f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.7mΩ
Gate-source voltage: ±20V
Gate charge: 108nC
Produkt ist nicht verfügbar
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IPB65R110CFDAATMA1 Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 31.2A; 277.8W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 118nC
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+4.68 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPW65R110CFDFKSA2 Infineon-IPX65R110CFD-DS-v02_06-en.pdf?fileId=db3a30433004641301306abd8e2041b1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+5.31 EUR
120+4.78 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
BSZ068N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1C1ABF3B811C&compId=BSZ068N06NS-DTE.pdf?ci_sign=fa3ecd472cbb88f8d166e7c20f1c2f8d458bfbec
BSZ068N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 46W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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BSB028N06NN3GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C21169B999611C&compId=BSB028N06NN3G-DTE.pdf?ci_sign=9f74ee56527681bf6720ac86acff4685671d1a87
BSB028N06NN3GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 78W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 78W
Case: CanPAK™ M; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC028N06LS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C28F27079C611C&compId=BSC028N06LS3G-DTE.pdf?ci_sign=bbe9fc3061cb470e92c25d928fd3834c48baac10
BSC028N06LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPD038N06N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A699276DED30A11C&compId=IPD038N06N3G-DTE.pdf?ci_sign=bd1362c96028dc62407e059fda18143201d9fbe8
IPD038N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD088N06N3GATMA1 Infineon-IPD088N06N3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b2351db4d5c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.51 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPB031N08N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB151D4F9211C&compId=IPB031N08N5-DTE.pdf?ci_sign=3159f32d96288cc61656ed143c70a029107448c2
IPB031N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB036N12N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBD3543DCCA11C&compId=IPB036N12N3G-DTE.pdf?ci_sign=f6e85fe1d433fdb0362bcc3083d1806c0c8f5354
IPB036N12N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 180A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 120V
Drain current: 180A
Power dissipation: 300W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB038N12N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBB68318E8811C&compId=IPB038N12N3G-DTE.pdf?ci_sign=1ce7670095e99e047c4caf194cc03ca588fb26fa
IPB038N12N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 120V
Drain current: 120A
Power dissipation: 300W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB031NE7N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5DD52B98B211C&compId=IPB031NE7N3G-DTE.pdf?ci_sign=cdda49cb192f2d913b204bf3b9535fc7bc4e1788
IPB031NE7N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLHM630TRPBF pVersion=0046&contRep=ZT&docId=E222776C4E3F4BF1A303005056AB0C4F&compId=irlhm630pbf.pdf?ci_sign=170c72500cf1dc0c0ea25a0be851ac421b66adf6
IRLHM630TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRF7862TRPBF pVersion=0046&contRep=ZT&docId=E221AD030E88B4F1A303005056AB0C4F&compId=irf7862pbf.pdf?ci_sign=84fcf72887f95ada0b37c5ae9daf8ac8c5825d63
IRF7862TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH8321TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCCBDA836655EA&compId=IRFH8321TRPBF.pdf?ci_sign=8af00b2029e222c13b14e3ae39a6c3a7baa0f4ae
IRFH8321TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.4W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH8325TRPBF pVersion=0046&contRep=ZT&docId=E221BA7452A666F1A303005056AB0C4F&compId=irfh8325pbf.pdf?ci_sign=a76385c090eb515f3739add9718f7fb10d861c99
IRFH8325TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSL308PEH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA913D1D61B311CC&compId=BSL308PEH6327XTSA1-DTE.pdf?ci_sign=2926dcc98cc2f16e4e3030d97715eb942d9c5794
BSL308PEH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6; ESD
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET x2
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 80mΩ
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-TSOP-6
Kind of channel: enhancement
Version: ESD
Mounting: SMD
auf Bestellung 1942 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
172+0.42 EUR
211+0.34 EUR
400+0.29 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
BSZ146N10LS5ATMA1 infineon-bsz146n10ls5-datasheet-en.pdf?fileId=5546d4625696ed760156e6c1a0a327fc
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 40A; 52W; SMT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: N
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 52W
Gate-source voltage: 20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.67 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IPN50R1K4CEATMA1 Infineon-IPN50R1K4CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac894e25aa7
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPN50R1K4CEATMA1
auf Bestellung 78000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.23 EUR
Mindestbestellmenge: 3000
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IRFP4310ZPBFXKMA1 Infineon_IRFP4310Z_DataSheet_v01_01_EN-3363303.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 134A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 134A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS25752LTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE790BCF6A24C542745&compId=IRS25752ltrpbf.pdf?ci_sign=cab2f992ac3e11dcc78a977da4ae432757a0c1b3
IRS25752LTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SOT23-6
Output current: -240...160mA
Number of channels: 1
Supply voltage: 10...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 225ns
Turn-off time: 255ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2302SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA7EA488D59D3D7&compId=IRS2302SPBF.pdf?ci_sign=3c1e65303fb8c7d19a0206b3213cfa65210e5079
IRS2302SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 650ns
Turn-off time: 200ns
Power: 625mW
Produkt ist nicht verfügbar
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BSP317PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9219ACB51A51CC&compId=BSP317PH6327XTSA1-dte.pdf?ci_sign=a936721dcc5d1bbb427c56fd5eca3034a2449eee
BSP317PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Kind of channel: enhancement
Case: PG-SOT223
Mounting: SMD
Type of transistor: P-MOSFET
Technology: SIPMOS™
Drain-source voltage: -250V
Drain current: -0.43A
On-state resistance: 4Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 2429 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
95+0.76 EUR
140+0.51 EUR
250+0.44 EUR
500+0.4 EUR
1000+0.36 EUR
2000+0.34 EUR
Mindestbestellmenge: 64
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IPD122N10N3GATMA1 Infineon-IPD122N10N3_G-DS-v02_03-en.pdf?fileId=db3a30432239cccd0122604a0b2e7f65
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2427 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.37 EUR
63+1.15 EUR
68+1.06 EUR
73+0.98 EUR
81+0.89 EUR
100+0.84 EUR
200+0.79 EUR
500+0.73 EUR
1000+0.72 EUR
Mindestbestellmenge: 53
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IPB65R190C7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2FB74953A71BF&compId=IPB65R190C7-DTE.pdf?ci_sign=de5cd77f6bd4c6f81d65e42a03bfc2b86172d885
IPB65R190C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS12DHIV10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS12DHIV20 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS12DHVV10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS12TFIV10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: TSOP56
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL01GS12TFIV20 S29GL_128S_01GS_00.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: TSOP56
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS12TFVV20 S29GL_128S_01GS_00.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: TSOP56
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHBV20 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHBV23 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHIV13 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHIV20 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHIV23 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHVV20 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHVV23 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6302VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E02D7CE8486469&compId=BAT6302VH6327XTSA1.pdf?ci_sign=37345c6b5c4c72fa5d20b81471d690570a6d7645
BAT6302VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 3V; 0.1A; 100mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.1W
auf Bestellung 410 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
147+0.49 EUR
173+0.41 EUR
317+0.23 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
ISC240P06LMATMA1 Infineon-ISC240P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4b2c536ec
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 59A; Idm: 236A; 188W
Case: PG-TDSON-8
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Drain current: 59A
Drain-source voltage: 60V
Power dissipation: 188W
Pulsed drain current: 236A
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Produkt ist nicht verfügbar
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BFR35APE6327HTSA1 INFNS22473-1.pdf?t.download=true&u=5oefqw
BFR35APE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 280mW; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: NPN
Kind of transistor: RF
Collector current: 45mA
Power dissipation: 0.28W
Collector-emitter voltage: 15V
Current gain: 70...140
Frequency: 5GHz
Polarisation: bipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP135IXTSA1 Infineon-BSP135I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a4188551361e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.2 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IRF7842TRPBF description pVersion=0046&contRep=ZT&docId=E221AC935A3E8EF1A303005056AB0C4F&compId=irf7842pbf.pdf?ci_sign=744a801cb6d39a17fc5323a2cd421e1967a6254c
IRF7842TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2118 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
59+1.22 EUR
72+1 EUR
81+0.89 EUR
100+0.8 EUR
Mindestbestellmenge: 44
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FF100R12W1T7EB11BPSA1 FF100R12W1T7EB11BPSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: for UPS; Inverter; motors; photovoltaics
Semiconductor structure: common emitter; transistor/transistor
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Case: AG-EASY1B
Topology: IGBT x2; NTC thermistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PVI5013RSPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE789CF03423360A745&compId=pvi5013r.pdf?ci_sign=2896a267ac238fb8d92b31fc582bd7c80dbfef82
PVI5013RSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Manufacturer series: PVI5013RPbF
Turn-off time: 25µs
Turn-on time: 5ms
Number of channels: 2
Insulation voltage: 3.75kV
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R190CFDATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2FCE3F865B1BF&compId=IPB65R190CFD-DTE.pdf?ci_sign=29fd38479d7b134b2403a81f7a99daed4ae2ab33
IPB65R190CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB65R190CFDAATMA1 Infineon-IPX65R190CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139afa2346920a1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 17.5A; 151W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 171mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.76 EUR
Mindestbestellmenge: 1000
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IPB65R190CFDATMA2 DS_IPX65R190CFD__2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432fd0c54a012fded065a8309b
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPB65R190CFDATMA2
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.17 EUR
Mindestbestellmenge: 1000
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IPB65R065C7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2EB2A880771BF&compId=IPB65R065C7-DTE.pdf?ci_sign=fea8ec4937df9f9dc590a5a6483e4546548d8ff6
IPB65R065C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7420TRPBF pVersion=0046&contRep=ZT&docId=E221A2D620B293F1A303005056AB0C4F&compId=irf7420pbf.pdf?ci_sign=6253395e5caaefe09fbe324a35a465519a31e9a5
IRF7420TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB180N06S4H1ATMA2 Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 250W
Case: PG-TO263-7-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR401WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE994C27E55264558BF&compId=BCR401W.pdf?ci_sign=6541f52c2999ab839e95193870c4f087e5a9dafd
BCR401WH6327XTSA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Number of channels: 1
Case: SOT343
Kind of integrated circuit: current regulator; LED driver
Operating voltage: 1.2...18V DC
Integrated circuit features: linear dimming
Topology: single transistor
Type of integrated circuit: driver
Output current: 10...60mA
Produkt ist nicht verfügbar
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IMBG120R030M1HXTMA1 Infineon-IMBG120R030M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0eca774325c
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IMBG120R030M1HXTMA1
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+13.86 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
BCR430UXTSA2 Infineon-BCR%20430U-DataSheet-v01_03-EN.pdf?fileId=5546d4627506bb32017541202bc15395
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Topology: single transistor
Case: PG-SOT23-6
Output current: 20...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Operating voltage: 6...42V DC
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Mounting: SMD
Produkt ist nicht verfügbar
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IPD33CN10NGATMA1 Infineon-IPP35CN10N-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42b457b44b1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 108A; 58W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 108A
Power dissipation: 58W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C1371KV33-100AXI Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; -40÷85°C
Memory organisation: 512kx36bit
Kind of package: in-tray
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TQFP100
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 18Mb SRAM
Frequency: 100MHz
Produkt ist nicht verfügbar
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IRF250P224 IRF250P224.pdf
IRF250P224
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 203nC
Kind of package: tube
Technology: StrongIRFET™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4368PBF description pVersion=0046&contRep=ZT&docId=E1C04E6B43C06FF1A6F5005056AB5A8F&compId=irfp4368pbf.pdf?ci_sign=9eb47e6406d9302930fa1feedb7fd32221717365
IRFP4368PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLS3813TRLPBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC004893E39A143&compId=IRLS3813TRLPBF.pdf?ci_sign=d5c73a2dcebb5123fbcd021d4dd0c7ce98082d0b
IRLS3813TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 156A; 195W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 156A
Power dissipation: 195W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
On-state resistance: 1.95mΩ
Gate-source voltage: ±20V
Gate charge: 55nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLS3034TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF1363FB77DB5EA&compId=IRLS3034TRLPBF.pdf?ci_sign=b1cd31c779cd5fbc0f101d0a52e7c4beab36a4a9
IRLS3034TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRLS3034 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8B1A083EA96143&compId=AUIRLS3034.pdf?ci_sign=ff5db222f1e89365072581b30ecf44c64c41980f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.7mΩ
Gate-source voltage: ±20V
Gate charge: 108nC
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