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TLD5097EPXUMA1 INFINEON TECHNOLOGIES Infineon-TLD5097EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b58a1180e Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Case: PG-TSDSO-14
Operating voltage: 4.5...45V DC
Output current: -550...380mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: LED driver; SMPS controller
Mounting: SMD
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TLD5098EPXUMA1 INFINEON TECHNOLOGIES Infineon-TLD5098EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b67681811 Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Case: PG-TSDSO-14
Operating voltage: 4.5...45V DC
Output current: -550...380mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: LED driver; SMPS controller
Mounting: SMD
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IPAN60R210PFD7SXKSA1 IPAN60R210PFD7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAN60R210PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e2254e024673e Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 10A; Idm: 42A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 42A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 386mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPD65R190C7ATMA1 IPD65R190C7ATMA1 INFINEON TECHNOLOGIES IPD65R190C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 3.2A
Drain-source voltage: 650V
Power dissipation: 28W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
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BSZ025N04LSATMA1 BSZ025N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DF4E393A0611C&compId=BSZ025N04LS-DTE.pdf?ci_sign=c7e189cc621b48c52fd66a8f0c37be3c84d10bf3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
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BSZ028N04LSATMA1 BSZ028N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DF8A4764E611C&compId=BSZ028N04LS-DTE.pdf?ci_sign=b47980fc1bac52431ab9bce3c8240b67030a1471 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
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BSM200GB60DLC BSM200GB60DLC INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E56EC383BCA469&compId=BSM200GB60DLC.pdf?ci_sign=ad8b4e1a387281680046d25354b2887a6f0ae6de Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: AG-34MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 730W
Mechanical mounting: screw
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BSS316NH6327XTSA1 BSS316NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7E99C6B1FB10B&compId=BSS316NH6327XTSA1.pdf?ci_sign=7c35a3609d9f80ea9f399ecf296e3a2809057254 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 30V
Drain current: 1.4A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 4923 Stücke:
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313+0.23 EUR
556+0.13 EUR
738+0.097 EUR
839+0.085 EUR
1467+0.049 EUR
1553+0.046 EUR
Mindestbestellmenge: 313
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FP06R12W1T4B3BOMA1 FP06R12W1T4B3BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8B20C73D5053D7&compId=FP06R12W1T4B3.pdf?ci_sign=b0d07d5c11c3511c198ac0969a13834d175d08d9 Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 12A
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
auf Bestellung 1 Stücke:
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1+71.5 EUR
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FS10R12VT3BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8C676DF9BDB3D7&compId=FS10R12VT3.pdf?ci_sign=23a7050ec5881090dc6b45a7b7948f24badf5c4e Category: IGBT modules
Description: Transistor/transistor; IGBT three-phase bridge; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Power dissipation: 64W
Electrical mounting: Press-in PCB
Technology: EasyPACK™
Topology: IGBT three-phase bridge
Type of semiconductor module: IGBT
Case: AG-EASY750-1
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FS75R12W2T4B11BOMA1 INFINEON TECHNOLOGIES Infineon-FS75R12W2T4_B11-DS-v02_01-en_de.pdf?fileId=db3a304320896aa20120b40c2da2770f Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-EASY2B-2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 375W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
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BTS5014SDAAUMA1 BTS5014SDAAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986790EA776469&compId=BTS5014SDA.pdf?ci_sign=2df677d362e5c63f61f5d0e01a54278934d5371d Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 14mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
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BTS5016SDA BTS5016SDA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986F30BF6F6469&compId=BTS5016SDA.pdf?ci_sign=8fd750d125e24136a23686b117b43d3f31b35a35 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 16mΩ
Technology: High Current PROFET
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IKCM10L60GAXKMA1 IKCM10L60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACE25CCB96B3D7&compId=IKCM10L60GA.pdf?ci_sign=9cbc71647cd20c3c843610d6c4b7ffd632abf6e7 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
Produkt ist nicht verfügbar
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IPA60R280P6XKSA1 IPA60R280P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594CE7C0F3D91BF&compId=IPA60R280P6-DTE.pdf?ci_sign=08d1d6408669e5a7e598c7bb06f1d1dca39becfb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
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27+2.73 EUR
32+2.23 EUR
Mindestbestellmenge: 27
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IPA60R400CEXKSA1 IPA60R400CEXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D5CFAA7B11BF&compId=IPA60R400CE-DTE.pdf?ci_sign=e5e1233d9c0593ec69716be1ffa0f326d68ab466 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP
Drain current: 10.3A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
auf Bestellung 237 Stücke:
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41+1.77 EUR
45+1.6 EUR
49+1.49 EUR
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IPA60R099P7 IPA60R099P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1AD96D8E00749&compId=IPA60R099P7.pdf?ci_sign=7eff8bdfbd3710d012680df6a59449a03e6ea114 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 29W; TO220FP
Power dissipation: 29W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
Drain current: 20A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPA60R199CPXKSA1 IPA60R199CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B4891FF1D1BF&compId=IPA60R199CP-DTE.pdf?ci_sign=308ea5579321e81455d0dbd6fd33a8b7f65b595d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R280P7 IPA60R280P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E2BEE6A4BB2749&compId=IPA60R280P7.pdf?ci_sign=c5d76bff142e564d760e07121e703fc630eade93 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R280E6XKSA1 IPA60R280E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C3FCF1A931BF&compId=IPA60R280E6-DTE.pdf?ci_sign=ff2c74d461761c5dd4f594410d6756d5d454b154 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R099C7XKSA1 IPA60R099C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD80EED772EC20C7&compId=IPA60R099C7.pdf?ci_sign=0c95349270cbb480277ccc7e7c7a8b4e2a698a7b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Gate charge: 42nC
Technology: CoolMOS™ C7
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 83A
Mounting: THT
Case: TO220FP
Drain-source voltage: 650V
Drain current: 8A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
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IPA60R125CPXKSA1 IPA60R125CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B6BA600A71BF&compId=IPA60R125CP-DTE.pdf?ci_sign=56ee650e05b7d6255b4dfadc36d35067290454a6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
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10+7.88 EUR
11+6.78 EUR
16+4.48 EUR
Mindestbestellmenge: 10
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IPA60R125C6XKSA1 IPA60R125C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B83B2F8B51BF&compId=IPA60R125C6-DTE.pdf?ci_sign=595dee37e8707623102b3824db3424cc58000d4f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R125P6XKSA1 IPA60R125P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D3ADBD8771BF&compId=IPA60R125P6-DTE.pdf?ci_sign=509a3cf4af1c085ef703fbfb7483c4f16578c9d6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R080P7 IPA60R080P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1CDA5B1716749&compId=IPA60R080P7.pdf?ci_sign=b19a92ace49bddc420c6fddfebd6f5304ce10d00 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB123N10N3GATMA1 IPB123N10N3GATMA1 INFINEON TECHNOLOGIES IPB123N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Power dissipation: 94W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSS192PH6327FTSA1 BSS192PH6327FTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA927B55CB5EB1CC&compId=BSS192PH6327FTSA1-dte.pdf?ci_sign=15b0307eacafb5f99389df84c9a392d42ed54513 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 620 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
154+0.47 EUR
180+0.4 EUR
296+0.24 EUR
313+0.23 EUR
Mindestbestellmenge: 107
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IPB60R060P7ATMA1 IPB60R060P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89680FE3A9654F3D6&compId=IPB60R060P7.pdf?ci_sign=ce2fbf2f237547b81b51c17c17d79d3436fb6d82 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel
Kind of channel: enhancement
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BSC030P03NS3GAUMA1 BSC030P03NS3GAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA911EA046D911CC&compId=BSC030P03NS3GAUMA1-DTE.pdf?ci_sign=c1254b06c5c76b1ff31ae1664f0828f8ca5ba6e1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1585 Stücke:
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39+1.87 EUR
46+1.57 EUR
50+1.43 EUR
66+1.09 EUR
70+1.03 EUR
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EVAL-IMM101T-015TOBO1 (SP004177748)
+1
 		EVAL-IMM101T-015TOBO1 (SP004177748) INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDBADF7A0174CD460C7&compId=EVALIMM101T015TOBO.PDF?ci_sign=1c41203658233780afea79eb8fca0913b805c658 Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Kit contents: prototype board
Interface: GPIO; I2C; PWM; UART
Application: motors
Type of development kit: evaluation
Kind of module: motor driver
Components: IMM101T-015M
Kind of connector: screw terminal x2
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BSC010N04LSATMA1 BSC010N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A1D674C41301011C&compId=BSC010N04LS-DTE.pdf?ci_sign=d42a193b95255dc1f0aefdcdc81acdbfe54a88bf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1mΩ
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
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BSC010N04LSIATMA1 BSC010N04LSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A1D67EF5A7A1411C&compId=BSC010N04LSI-DTE.pdf?ci_sign=720cdb79dd60710691892f7034e3197c240f61f0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R099P6XKSA1 IPW60R099P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595451D559B31BF&compId=IPW60R099P6-DTE.pdf?ci_sign=64f61ef499400e8d208bb826aca30234098f363e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 54 Stücke:
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17+4.43 EUR
23+3.15 EUR
25+2.97 EUR
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BCR555E6327 BCR555E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C54BF16BF30469&compId=BCR555.pdf?ci_sign=70476ae6c4aa5d0fa0a3e850633835954210d08b Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 797 Stücke:
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496+0.14 EUR
646+0.11 EUR
797+0.09 EUR
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BSS131H6327XTSA1 BSS131H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7A747833B910B&compId=BSS131H6327XTSA1.pdf?ci_sign=1a0db14b486c9c03a4ac7e87d14adcf0bc42587e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 12867 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
319+0.22 EUR
408+0.18 EUR
498+0.14 EUR
604+0.12 EUR
944+0.076 EUR
999+0.072 EUR
Mindestbestellmenge: 228
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IRF8788TRPBF IRF8788TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AE9E8C17B9F1A303005056AB0C4F&compId=irf8788pbf.pdf?ci_sign=f0fcf5faf3394f41f78b4d6575d17f702fe54c98 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IDB30E120ATMA1 IDB30E120ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA2439FDDAD0469&compId=IDB30E120ATMA1.pdf?ci_sign=5a621dfcb7943456ce2142ca34895c33f860913b Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: TO263-3
auf Bestellung 948 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.32 EUR
40+1.8 EUR
53+1.37 EUR
55+1.3 EUR
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BSP296L6327 BSP296L6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6320436FF95EA&compId=BSP296.pdf?ci_sign=f8eb2a9eb8bf8b297e995d348fb8d11f95f840e1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Drain-source voltage: 100V
Drain current: 1.1A
On-state resistance: 0.7Ω
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BSP296NH6327XTSA1 BSP296NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A71BCC5D0C110B&compId=BSP296NH6327XTSA1.pdf?ci_sign=62688a05fa70037902c602082913e2323a4fa340 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Drain-source voltage: 100V
Drain current: 1.2A
On-state resistance: 0.8Ω
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
95+0.76 EUR
117+0.61 EUR
163+0.44 EUR
167+0.43 EUR
Mindestbestellmenge: 69
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FP20R06W1E3B11BOMA1 FP20R06W1E3B11BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E55D7107CA0469&compId=FP20R06W1E3B11.pdf?ci_sign=69ad90c278e3c2bf446e00a2bb3a887e5cb3f63e Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 40A
Application: Inverter
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-2
Produkt ist nicht verfügbar
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IGCM10F60GAXKMA1 IGCM10F60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACD242DE1053D7&compId=IGCM10F60GA.pdf?ci_sign=9207b0278c6301d0b90264565cf2b7801ddfeb31 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Frequency: 20kHz
Output current: -10...10A
Type of integrated circuit: driver
Power dissipation: 26.1W
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Mounting: THT
Operating temperature: -40...125°C
Case: PG-MDIP24
Operating voltage: 13.5...18.5/0...400V DC
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.8 EUR
8+9.02 EUR
9+8.54 EUR
Mindestbestellmenge: 7
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IRLL2705TRPBF IRLL2705TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227B31DD76B8F1A303005056AB0C4F&compId=irll2705pbf.pdf?ci_sign=b59a3ae6b96ab89ac72517290e013616f2a9d6b3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 356 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
87+0.83 EUR
159+0.45 EUR
168+0.43 EUR
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BSC028N06NSATMA1 BSC028N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C290BBFAA9011C&compId=BSC028N06NS-DTE.pdf?ci_sign=9bc8eb8beb6cd7c1675a2c5290d0356c5055d7c0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3432 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.8 EUR
31+2.32 EUR
47+1.53 EUR
50+1.44 EUR
500+1.39 EUR
Mindestbestellmenge: 26
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IPI029N06NAKSA1 IPI029N06NAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A699443DDF97811C&compId=IPI029N06N-DTE.pdf?ci_sign=e39e3628720de44745f1a3030a66139a6d697760 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO262-3
Type of transistor: N-MOSFET
Case: PG-TO262-3
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 2.9mΩ
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
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BSC072N08NS5ATMA1 BSC072N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38722EF2F23A11C&compId=BSC072N08NS5-DTE.pdf?ci_sign=c26e399b4328c18b246b5e82a3b4ee2831baf95e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 80V
Drain current: 74A
On-state resistance: 7.2mΩ
Mounting: SMD
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPB055N03LGATMA1 IPB055N03LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5EE416FBE811C&compId=IPB055N03LG-DTE.pdf?ci_sign=1ef737b4427e3ce7dbe4fffab65cd88a5c2578a3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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F4150R12KS4BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA585AEB73C81A0C4&compId=F4150R12KS4BOSA1.pdf?ci_sign=bcef10772012161925ebe1847340da5b430f4f81 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W
Pulsed collector current: 300A
Power dissipation: 960W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 3
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Produkt ist nicht verfügbar
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IAUC100N08S5N031ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IAUC100N08S5N034ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 22A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 66nC
Produkt ist nicht verfügbar
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IAUC100N08S5N043ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 76A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 120W
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TLE7230RAUMA1 INFINEON TECHNOLOGIES Infineon-TLE7230R-DS-v03_04-EN.pdf?fileId=5546d4625a888733015aa2e2c9520f8a Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
800+6.18 EUR
Mindestbestellmenge: 800
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IRF1010ZSTRLPBF INFINEON TECHNOLOGIES irf1010zspbf.pdf?fileId=5546d462533600a4015355da7d69188d Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3200 Stücke:
Lieferzeit 14-21 Tag (e)
800+0.8 EUR
Mindestbestellmenge: 800
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IPD040N03LF2SATMA1 INFINEON TECHNOLOGIES IPD040N03LF2SATMA1.pdf Category: Transistors - Unclassified
Description: IPD040N03LF2SATMA1
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+0.44 EUR
Mindestbestellmenge: 2000
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ISZ040N03L5ISATMA1 INFINEON TECHNOLOGIES Infineon-ISZ040N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8d91c970997 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.3 EUR
Mindestbestellmenge: 5000
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BSP125H6433XTMA1 INFINEON TECHNOLOGIES Infineon-BSP125-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b50cae9702806 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.35 EUR
Mindestbestellmenge: 4000
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ESD130B1W0201E6327XTSA1 INFINEON TECHNOLOGIES Infineon-ESD130-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c02811e9592e Category: Diodes - Unclassified
Description: ESD130B1W0201E6327XTSA1
auf Bestellung 45000 Stücke:
Lieferzeit 14-21 Tag (e)
15000+0.037 EUR
Mindestbestellmenge: 15000
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ESD131B1W0201E6327XTSA1 INFINEON TECHNOLOGIES Infineon-ESD131-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce94850964889 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
15000+0.054 EUR
Mindestbestellmenge: 15000
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FS75R12KE3BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8CD6FB0A3C13D7&compId=FS75R12KE3.pdf?ci_sign=62f72f44d68704f1bdf4900ffa11de40733229ea Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 350W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 2
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-ECONO2-6
Produkt ist nicht verfügbar
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FS75R12KE3BPSA1 INFINEON TECHNOLOGIES Infineon-FS75R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4311bfa5380 Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
15+88.45 EUR
Mindestbestellmenge: 15
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CY8C5287AXI-LP095 INFINEON TECHNOLOGIES download Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
90+16.16 EUR
Mindestbestellmenge: 90
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TLD5097EPXUMA1 Infineon-TLD5097EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b58a1180e
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Case: PG-TSDSO-14
Operating voltage: 4.5...45V DC
Output current: -550...380mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: LED driver; SMPS controller
Mounting: SMD
Produkt ist nicht verfügbar
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TLD5098EPXUMA1 Infineon-TLD5098EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b67681811
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Case: PG-TSDSO-14
Operating voltage: 4.5...45V DC
Output current: -550...380mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: LED driver; SMPS controller
Mounting: SMD
Produkt ist nicht verfügbar
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IPAN60R210PFD7SXKSA1 Infineon-IPAN60R210PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e2254e024673e
IPAN60R210PFD7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 10A; Idm: 42A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 42A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 386mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD65R190C7ATMA1 IPD65R190C7-DTE.pdf
IPD65R190C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 3.2A
Drain-source voltage: 650V
Power dissipation: 28W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSZ025N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DF4E393A0611C&compId=BSZ025N04LS-DTE.pdf?ci_sign=c7e189cc621b48c52fd66a8f0c37be3c84d10bf3
BSZ025N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ028N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DF8A4764E611C&compId=BSZ028N04LS-DTE.pdf?ci_sign=b47980fc1bac52431ab9bce3c8240b67030a1471
BSZ028N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSM200GB60DLC pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E56EC383BCA469&compId=BSM200GB60DLC.pdf?ci_sign=ad8b4e1a387281680046d25354b2887a6f0ae6de
BSM200GB60DLC
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: AG-34MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 730W
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BSS316NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7E99C6B1FB10B&compId=BSS316NH6327XTSA1.pdf?ci_sign=7c35a3609d9f80ea9f399ecf296e3a2809057254
BSS316NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 30V
Drain current: 1.4A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 4923 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
556+0.13 EUR
738+0.097 EUR
839+0.085 EUR
1467+0.049 EUR
1553+0.046 EUR
Mindestbestellmenge: 313
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FP06R12W1T4B3BOMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8B20C73D5053D7&compId=FP06R12W1T4B3.pdf?ci_sign=b0d07d5c11c3511c198ac0969a13834d175d08d9
FP06R12W1T4B3BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 12A
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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FS10R12VT3BOMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8C676DF9BDB3D7&compId=FS10R12VT3.pdf?ci_sign=23a7050ec5881090dc6b45a7b7948f24badf5c4e
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor/transistor; IGBT three-phase bridge; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Power dissipation: 64W
Electrical mounting: Press-in PCB
Technology: EasyPACK™
Topology: IGBT three-phase bridge
Type of semiconductor module: IGBT
Case: AG-EASY750-1
Produkt ist nicht verfügbar
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FS75R12W2T4B11BOMA1 Infineon-FS75R12W2T4_B11-DS-v02_01-en_de.pdf?fileId=db3a304320896aa20120b40c2da2770f
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-EASY2B-2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 375W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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BTS5014SDAAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986790EA776469&compId=BTS5014SDA.pdf?ci_sign=2df677d362e5c63f61f5d0e01a54278934d5371d
BTS5014SDAAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 14mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
Produkt ist nicht verfügbar
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BTS5016SDA pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986F30BF6F6469&compId=BTS5016SDA.pdf?ci_sign=8fd750d125e24136a23686b117b43d3f31b35a35
BTS5016SDA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 16mΩ
Technology: High Current PROFET
Produkt ist nicht verfügbar
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IKCM10L60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACE25CCB96B3D7&compId=IKCM10L60GA.pdf?ci_sign=9cbc71647cd20c3c843610d6c4b7ffd632abf6e7
IKCM10L60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
Produkt ist nicht verfügbar
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IPA60R280P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594CE7C0F3D91BF&compId=IPA60R280P6-DTE.pdf?ci_sign=08d1d6408669e5a7e598c7bb06f1d1dca39becfb
IPA60R280P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.73 EUR
32+2.23 EUR
Mindestbestellmenge: 27
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IPA60R400CEXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D5CFAA7B11BF&compId=IPA60R400CE-DTE.pdf?ci_sign=e5e1233d9c0593ec69716be1ffa0f326d68ab466
IPA60R400CEXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP
Drain current: 10.3A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
auf Bestellung 237 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
45+1.6 EUR
49+1.49 EUR
Mindestbestellmenge: 41
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IPA60R099P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1AD96D8E00749&compId=IPA60R099P7.pdf?ci_sign=7eff8bdfbd3710d012680df6a59449a03e6ea114
IPA60R099P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 29W; TO220FP
Power dissipation: 29W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Drain-source voltage: 600V
Drain current: 20A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPA60R199CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B4891FF1D1BF&compId=IPA60R199CP-DTE.pdf?ci_sign=308ea5579321e81455d0dbd6fd33a8b7f65b595d
IPA60R199CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R280P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E2BEE6A4BB2749&compId=IPA60R280P7.pdf?ci_sign=c5d76bff142e564d760e07121e703fc630eade93
IPA60R280P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R280E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C3FCF1A931BF&compId=IPA60R280E6-DTE.pdf?ci_sign=ff2c74d461761c5dd4f594410d6756d5d454b154
IPA60R280E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R099C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD80EED772EC20C7&compId=IPA60R099C7.pdf?ci_sign=0c95349270cbb480277ccc7e7c7a8b4e2a698a7b
IPA60R099C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Gate charge: 42nC
Technology: CoolMOS™ C7
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 83A
Mounting: THT
Case: TO220FP
Drain-source voltage: 650V
Drain current: 8A
On-state resistance: 99mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPA60R125CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B6BA600A71BF&compId=IPA60R125CP-DTE.pdf?ci_sign=56ee650e05b7d6255b4dfadc36d35067290454a6
IPA60R125CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.88 EUR
11+6.78 EUR
16+4.48 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R125C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B83B2F8B51BF&compId=IPA60R125C6-DTE.pdf?ci_sign=595dee37e8707623102b3824db3424cc58000d4f
IPA60R125C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R125P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D3ADBD8771BF&compId=IPA60R125P6-DTE.pdf?ci_sign=509a3cf4af1c085ef703fbfb7483c4f16578c9d6
IPA60R125P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R080P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1CDA5B1716749&compId=IPA60R080P7.pdf?ci_sign=b19a92ace49bddc420c6fddfebd6f5304ce10d00
IPA60R080P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB123N10N3GATMA1 IPB123N10N3G-DTE.pdf
IPB123N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Power dissipation: 94W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSS192PH6327FTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA927B55CB5EB1CC&compId=BSS192PH6327FTSA1-dte.pdf?ci_sign=15b0307eacafb5f99389df84c9a392d42ed54513
BSS192PH6327FTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 620 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
154+0.47 EUR
180+0.4 EUR
296+0.24 EUR
313+0.23 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R060P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89680FE3A9654F3D6&compId=IPB60R060P7.pdf?ci_sign=ce2fbf2f237547b81b51c17c17d79d3436fb6d82
IPB60R060P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC030P03NS3GAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA911EA046D911CC&compId=BSC030P03NS3GAUMA1-DTE.pdf?ci_sign=c1254b06c5c76b1ff31ae1664f0828f8ca5ba6e1
BSC030P03NS3GAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1585 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.87 EUR
46+1.57 EUR
50+1.43 EUR
66+1.09 EUR
70+1.03 EUR
Mindestbestellmenge: 39
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EVAL-IMM101T-015TOBO1 (SP004177748) pVersion=0046&contRep=ZT&docId=005056AB90B41EDBADF7A0174CD460C7&compId=EVALIMM101T015TOBO.PDF?ci_sign=1c41203658233780afea79eb8fca0913b805c658
EVAL-IMM101T-015TOBO1 (SP004177748)
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Kit contents: prototype board
Interface: GPIO; I2C; PWM; UART
Application: motors
Type of development kit: evaluation
Kind of module: motor driver
Components: IMM101T-015M
Kind of connector: screw terminal x2
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+69.78 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
BSC010N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A1D674C41301011C&compId=BSC010N04LS-DTE.pdf?ci_sign=d42a193b95255dc1f0aefdcdc81acdbfe54a88bf
BSC010N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1mΩ
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC010N04LSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A1D67EF5A7A1411C&compId=BSC010N04LSI-DTE.pdf?ci_sign=720cdb79dd60710691892f7034e3197c240f61f0
BSC010N04LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595451D559B31BF&compId=IPW60R099P6-DTE.pdf?ci_sign=64f61ef499400e8d208bb826aca30234098f363e
IPW60R099P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.43 EUR
23+3.15 EUR
25+2.97 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
BCR555E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C54BF16BF30469&compId=BCR555.pdf?ci_sign=70476ae6c4aa5d0fa0a3e850633835954210d08b
BCR555E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 797 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
496+0.14 EUR
646+0.11 EUR
797+0.09 EUR
Mindestbestellmenge: 496
Im Einkaufswagen  Stück im Wert von  UAH
BSS131H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7A747833B910B&compId=BSS131H6327XTSA1.pdf?ci_sign=1a0db14b486c9c03a4ac7e87d14adcf0bc42587e
BSS131H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 12867 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
319+0.22 EUR
408+0.18 EUR
498+0.14 EUR
604+0.12 EUR
944+0.076 EUR
999+0.072 EUR
Mindestbestellmenge: 228
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IRF8788TRPBF pVersion=0046&contRep=ZT&docId=E221AE9E8C17B9F1A303005056AB0C4F&compId=irf8788pbf.pdf?ci_sign=f0fcf5faf3394f41f78b4d6575d17f702fe54c98
IRF8788TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IDB30E120ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA2439FDDAD0469&compId=IDB30E120ATMA1.pdf?ci_sign=5a621dfcb7943456ce2142ca34895c33f860913b
IDB30E120ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: TO263-3
auf Bestellung 948 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.32 EUR
40+1.8 EUR
53+1.37 EUR
55+1.3 EUR
Mindestbestellmenge: 31
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BSP296L6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6320436FF95EA&compId=BSP296.pdf?ci_sign=f8eb2a9eb8bf8b297e995d348fb8d11f95f840e1
BSP296L6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Drain-source voltage: 100V
Drain current: 1.1A
On-state resistance: 0.7Ω
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP296NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A71BCC5D0C110B&compId=BSP296NH6327XTSA1.pdf?ci_sign=62688a05fa70037902c602082913e2323a4fa340
BSP296NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Drain-source voltage: 100V
Drain current: 1.2A
On-state resistance: 0.8Ω
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
95+0.76 EUR
117+0.61 EUR
163+0.44 EUR
167+0.43 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
FP20R06W1E3B11BOMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E55D7107CA0469&compId=FP20R06W1E3B11.pdf?ci_sign=69ad90c278e3c2bf446e00a2bb3a887e5cb3f63e
FP20R06W1E3B11BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 40A
Application: Inverter
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGCM10F60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACD242DE1053D7&compId=IGCM10F60GA.pdf?ci_sign=9207b0278c6301d0b90264565cf2b7801ddfeb31
IGCM10F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Frequency: 20kHz
Output current: -10...10A
Type of integrated circuit: driver
Power dissipation: 26.1W
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Mounting: THT
Operating temperature: -40...125°C
Case: PG-MDIP24
Operating voltage: 13.5...18.5/0...400V DC
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.8 EUR
8+9.02 EUR
9+8.54 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRLL2705TRPBF pVersion=0046&contRep=ZT&docId=E2227B31DD76B8F1A303005056AB0C4F&compId=irll2705pbf.pdf?ci_sign=b59a3ae6b96ab89ac72517290e013616f2a9d6b3
IRLL2705TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 356 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
87+0.83 EUR
159+0.45 EUR
168+0.43 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
BSC028N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C290BBFAA9011C&compId=BSC028N06NS-DTE.pdf?ci_sign=9bc8eb8beb6cd7c1675a2c5290d0356c5055d7c0
BSC028N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3432 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.8 EUR
31+2.32 EUR
47+1.53 EUR
50+1.44 EUR
500+1.39 EUR
Mindestbestellmenge: 26
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IPI029N06NAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A699443DDF97811C&compId=IPI029N06N-DTE.pdf?ci_sign=e39e3628720de44745f1a3030a66139a6d697760
IPI029N06NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO262-3
Type of transistor: N-MOSFET
Case: PG-TO262-3
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 2.9mΩ
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC072N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38722EF2F23A11C&compId=BSC072N08NS5-DTE.pdf?ci_sign=c26e399b4328c18b246b5e82a3b4ee2831baf95e
BSC072N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 80V
Drain current: 74A
On-state resistance: 7.2mΩ
Mounting: SMD
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB055N03LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5EE416FBE811C&compId=IPB055N03LG-DTE.pdf?ci_sign=1ef737b4427e3ce7dbe4fffab65cd88a5c2578a3
IPB055N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
F4150R12KS4BOSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA585AEB73C81A0C4&compId=F4150R12KS4BOSA1.pdf?ci_sign=bcef10772012161925ebe1847340da5b430f4f81
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W
Pulsed collector current: 300A
Power dissipation: 960W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 3
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N08S5N031ATMA1 Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N08S5N034ATMA1 Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 22A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 66nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N08S5N043ATMA1 Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 76A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 120W
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7230RAUMA1 Infineon-TLE7230R-DS-v03_04-EN.pdf?fileId=5546d4625a888733015aa2e2c9520f8a
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+6.18 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
IRF1010ZSTRLPBF irf1010zspbf.pdf?fileId=5546d462533600a4015355da7d69188d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+0.8 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
IPD040N03LF2SATMA1 IPD040N03LF2SATMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPD040N03LF2SATMA1
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.44 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
ISZ040N03L5ISATMA1 Infineon-ISZ040N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8d91c970997
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.3 EUR
Mindestbestellmenge: 5000
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BSP125H6433XTMA1 Infineon-BSP125-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b50cae9702806
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.35 EUR
Mindestbestellmenge: 4000
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ESD130B1W0201E6327XTSA1 Infineon-ESD130-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c02811e9592e
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - Unclassified
Description: ESD130B1W0201E6327XTSA1
auf Bestellung 45000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.037 EUR
Mindestbestellmenge: 15000
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ESD131B1W0201E6327XTSA1 Infineon-ESD131-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce94850964889
Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.054 EUR
Mindestbestellmenge: 15000
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FS75R12KE3BOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8CD6FB0A3C13D7&compId=FS75R12KE3.pdf?ci_sign=62f72f44d68704f1bdf4900ffa11de40733229ea
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 350W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 2
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-ECONO2-6
Produkt ist nicht verfügbar
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FS75R12KE3BPSA1 Infineon-FS75R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4311bfa5380
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+88.45 EUR
Mindestbestellmenge: 15
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CY8C5287AXI-LP095 download
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+16.16 EUR
Mindestbestellmenge: 90
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