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IRFS7434TRLPBF INFINEON TECHNOLOGIES irfs7434pbf.pdf?fileId=5546d462533600a40153563a730021cc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 320A; 294W; D2PAK,TO263AB; SMT
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: N
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 294W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 216nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 800 Stücke:
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800+1.54 EUR
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CY8C4248LTI-L485 INFINEON TECHNOLOGIES Infineon-PSoC_4_PSoC_4200L_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed894aa5a14&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; Core: 32-bit
Type of integrated circuit: PSoC microcontroller
Clock frequency: 48MHz
Mounting: SMD
Kind of core: 32-bit
auf Bestellung 284 Stücke:
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260+10.7 EUR
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IPP015N04NGXKSA1 IPP015N04NGXKSA1 INFINEON TECHNOLOGIES IPP015N04NG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPP015N04NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP015N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce56640183175b60d92ae3 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 895 Stücke:
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100+1.26 EUR
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IPA65R190E6XKSA1 IPA65R190E6XKSA1 INFINEON TECHNOLOGIES IPA65R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 34W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.19Ω
Drain current: 20.2A
Gate-source voltage: ±20V
Power dissipation: 34W
Drain-source voltage: 650V
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19+3.88 EUR
21+3.4 EUR
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IPA65R650CEXKSA1 IPA65R650CEXKSA1 INFINEON TECHNOLOGIES IPA65R650CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 28W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.65Ω
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 650V
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60+1.2 EUR
81+0.89 EUR
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IPA65R380C6XKSA1 IPA65R380C6XKSA1 INFINEON TECHNOLOGIES IPA65R380C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.38Ω
Drain current: 10.6A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 650V
auf Bestellung 450 Stücke:
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35+2.04 EUR
37+1.97 EUR
100+1.62 EUR
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IPS65R1K5CEAKMA1 IPS65R1K5CEAKMA1 INFINEON TECHNOLOGIES IPS65R1K5CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; 28W; IPAK SL
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.5Ω
Drain current: 3.1A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 650V
auf Bestellung 616 Stücke:
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191+0.38 EUR
211+0.34 EUR
237+0.3 EUR
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IPL65R1K5C6SATMA1 IPL65R1K5C6SATMA1 INFINEON TECHNOLOGIES IPL65R1K5C6S-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3A; 26.6W; PG-VSON-4
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: SMD
Case: PG-VSON-4
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.5Ω
Drain current: 3A
Gate-source voltage: ±20V
Power dissipation: 26.6W
Drain-source voltage: 650V
auf Bestellung 6 Stücke:
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6+11.91 EUR
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IPP65R095C7XKSA1 IPP65R095C7XKSA1 INFINEON TECHNOLOGIES IPP65R095C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO220-3
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: PG-TO220-3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 95mΩ
Drain current: 24A
Gate-source voltage: ±20V
Power dissipation: 128W
Drain-source voltage: 650V
auf Bestellung 200 Stücke:
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17+4.23 EUR
19+3.93 EUR
50+3.73 EUR
100+3.36 EUR
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IPW65R420CFDFKSA1 IPW65R420CFDFKSA1 INFINEON TECHNOLOGIES IPW65R420CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO247-3
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: PG-TO247-3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.42Ω
Drain current: 8.7A
Gate-source voltage: ±20V
Power dissipation: 83.3W
Drain-source voltage: 650V
auf Bestellung 2 Stücke:
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2+35.75 EUR
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IPA60R650CEXKSA1 IPA60R650CEXKSA1 INFINEON TECHNOLOGIES IPA60R650CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 28W; TO220FP
Technology: CoolMOS™ CE
Kind of channel: enhancement
Mounting: THT
Case: TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.65Ω
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 600V
auf Bestellung 75 Stücke:
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54+1.34 EUR
62+1.16 EUR
73+0.99 EUR
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BSP135H6906XTSA1 INFINEON TECHNOLOGIES Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 120mA; 1.8W; PG-SOT223; SMT
Mounting: SMD
Drain current: 0.12A
Power dissipation: 1.8W
Gate-source voltage: 20V
On-state resistance: 30Ω
Drain-source voltage: 600V
Application: automotive industry
Case: PG-SOT223
Electrical mounting: SMT
Type of transistor: N-MOSFET
Technology: SIPMOS™
Gate charge: 4.9nC
auf Bestellung 20000 Stücke:
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1000+0.99 EUR
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IRFR2407TRPBF IRFR2407TRPBF INFINEON TECHNOLOGIES irfr2407pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BFR360FH6327XTSA1 BFR360FH6327XTSA1 INFINEON TECHNOLOGIES BFR360F.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Kind of transistor: RF
Case: TSFP-3
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 35mA
Power dissipation: 0.21W
Collector-emitter voltage: 6V
Frequency: 14GHz
Current gain: 90...160
Polarisation: bipolar
auf Bestellung 2801 Stücke:
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278+0.26 EUR
348+0.21 EUR
391+0.18 EUR
459+0.16 EUR
516+0.14 EUR
569+0.13 EUR
625+0.11 EUR
Mindestbestellmenge: 278
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IPD70R1K4P7SAUMA1 IPD70R1K4P7SAUMA1 INFINEON TECHNOLOGIES IPD70R1K4P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2482 Stücke:
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120+0.6 EUR
152+0.47 EUR
182+0.39 EUR
191+0.38 EUR
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IPD70R1K4CEAUMA1 IPD70R1K4CEAUMA1 INFINEON TECHNOLOGIES IPD70R1K4CE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.4A; 53W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.4A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 10.5nC
Produkt ist nicht verfügbar
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IPD70R2K0CEAUMA1 IPD70R2K0CEAUMA1 INFINEON TECHNOLOGIES IPD70R2K0CE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.6A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 7.8nC
Produkt ist nicht verfügbar
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SGW50N60HS SGW50N60HS INFINEON TECHNOLOGIES SGW50N60HS.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 416W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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IPC313N10N3RX1SA2 INFINEON TECHNOLOGIES Infineon-IPC313N10N3R-DS-v02_00-EN.pdf?fileId=5546d462525dbac4015287a4906625ca Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 2A; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 2A
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 22165 Stücke:
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12+6.02 EUR
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BAT1502ELE6327XTMA1 INFINEON TECHNOLOGIES Infineon-BAT15-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895df9e4e74 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
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BAT1504RE6152HTSA1 INFINEON TECHNOLOGIES Infineon-BAT15-04R-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389615154e83 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
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BAT15099E6433HTMA1 INFINEON TECHNOLOGIES INFNS15420-1.pdf?t.download=true&u=5oefqw Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
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IPA50R280CEXKSA2 IPA50R280CEXKSA2 INFINEON TECHNOLOGIES IPA50R280CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 30.4W; TO220FP
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.28Ω
Drain current: 7.5A
Gate-source voltage: ±20V
Power dissipation: 30.4W
Drain-source voltage: 500V
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220FP
Kind of package: tube
auf Bestellung 42 Stücke:
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40+1.83 EUR
42+1.7 EUR
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IMW120R020M1HXKSA1 INFINEON TECHNOLOGIES IMW120R020M1H.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 71A
Pulsed drain current: 213A
Power dissipation: 188W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY8C3866AXI-039 INFINEON TECHNOLOGIES Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Unclassified
Description: CY8C3866AXI-039
auf Bestellung 350 Stücke:
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90+26.87 EUR
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CY8C3866PVI-021 INFINEON TECHNOLOGIES Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Unclassified
Description: CY8C3866PVI-021
auf Bestellung 390 Stücke:
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30+24.9 EUR
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IPP220N25NFDAKSA1 IPP220N25NFDAKSA1 INFINEON TECHNOLOGIES IPP220N25NFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 61A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 61A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ FD
Produkt ist nicht verfügbar
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ETD540N22P60HPSA1 INFINEON TECHNOLOGIES ETD540N22P60_ETT540N22P60.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 542A; BG-PB60ECO-1; Ufmax: 1.73V
Gate current: 250mA
Max. forward voltage: 1.73V
Load current: 542A
Max. load current: 700A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 16.3kA
Case: BG-PB60ECO-1
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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IPP12CN10LGXKSA1 IPP12CN10LGXKSA1 INFINEON TECHNOLOGIES IPP12CN10LG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; 125W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain current: 69A
Drain-source voltage: 100V
Power dissipation: 125W
Produkt ist nicht verfügbar
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BSS138IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS138I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421e00e1d4c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
676+0.11 EUR
848+0.084 EUR
1137+0.063 EUR
1263+0.057 EUR
1352+0.053 EUR
3000+0.05 EUR
Mindestbestellmenge: 455
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IRFR5505TRPBF IRFR5505TRPBF INFINEON TECHNOLOGIES irfr5505.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2964 Stücke:
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46+1.56 EUR
86+0.84 EUR
93+0.77 EUR
106+0.68 EUR
250+0.62 EUR
500+0.58 EUR
1000+0.53 EUR
2000+0.49 EUR
Mindestbestellmenge: 46
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IRFB7546PBF IRFB7546PBF INFINEON TECHNOLOGIES IRFB7546PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 99W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 99W
Case: TO220AB
On-state resistance: 7.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 58nC
auf Bestellung 1285 Stücke:
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68+1.06 EUR
87+0.83 EUR
93+0.77 EUR
Mindestbestellmenge: 68
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IDW75D65D1XKSA1 INFINEON TECHNOLOGIES Infineon-IDW75D65D1-DS-v02_01-EN.pdf?fileId=5546d4624a0bf290014a5670e9cd3eeb Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 75A; tube; Ifsm: 580A; TO247-3; 163W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 75A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 580A
Case: TO247-3
Max. forward voltage: 1.28V
Power dissipation: 163W
Produkt ist nicht verfügbar
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IPB017N10N5LFATMA1 INFINEON TECHNOLOGIES Infineon-IPB017N10N5LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b379cf73c7f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 313W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
On-state resistance: 1.5mΩ
Drain current: 180A
Drain-source voltage: 100V
Power dissipation: 313W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 195nC
Produkt ist nicht verfügbar
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IPB120N04S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I120N04S4_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c33093d5d37&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 158W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 158W
Case: D2PAK; TO263
On-state resistance: 1.58mΩ
Mounting: SMD
Gate charge: 134nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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IPG20N04S4L11AATMA1 INFINEON TECHNOLOGIES IPG20N04S4L-11A_DS_1_0.pdf?fileId=5546d4614815da88014821772fae00b5 Category: Transistors - Unclassified
Description: IPG20N04S4L11AATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.68 EUR
Mindestbestellmenge: 5000
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IPB180P04P4L02ATMA2 INFINEON TECHNOLOGIES IPB180P04P4L02.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -140A; Idm: -720A; 150W
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -140A
Pulsed drain current: -720A
Power dissipation: 150W
Case: PG-TO263-7
Gate-source voltage: -16...5V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPD04P10PGBTMA1 SPD04P10PGBTMA1 INFINEON TECHNOLOGIES SPD04P10PGBTMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; 38W; PG-TO252-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Power dissipation: 38W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Produkt ist nicht verfügbar
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2EDF7275FXUMA1 2EDF7275FXUMA1 INFINEON TECHNOLOGIES 2EDF7xx5F_K_H.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Kind of package: reel; tape
Type of integrated circuit: driver
Case: PG-DSO-16
Technology: EiceDRIVER™
Mounting: SMD
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Number of channels: 2
Output current: -8...4A
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
Produkt ist nicht verfügbar
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AUIRL1404ZSTRL AUIRL1404ZSTRL INFINEON TECHNOLOGIES auirl1404s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 790A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPW35N60CFDFKSA1 INFINEON TECHNOLOGIES SPW35N60CFD_Rev.1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c05a24651 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 34.1A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 34.1A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 212nC
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
30+9.82 EUR
60+8.84 EUR
Mindestbestellmenge: 30
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IPD50N06S214ATMA2 INFINEON TECHNOLOGIES Infineon-IPD50N06S2_14-DS-v01_01-en.pdf?fileId=db3a304412b407950112b43351315b1a&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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GS0650306LRMRXUSA1 INFINEON TECHNOLOGIES Infineon-GS-065-030-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e5d762df9 Category: SMD N channel transistors
Description: GS0650306LRMRXUSA1
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
250+10.08 EUR
Mindestbestellmenge: 250
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IPB180N04S4H0ATMA1 IPB180N04S4H0ATMA1 INFINEON TECHNOLOGIES IPB180N04S4H0.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W
Case: PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Drain current: 180A
Drain-source voltage: 40V
Power dissipation: 250W
Technology: OptiMOS™ T2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 173nC
Produkt ist nicht verfügbar
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CYPM1111-40LQXI INFINEON TECHNOLOGIES Infineon-PMG1-S1_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea45a6733a Category: Integrated circuits - Unclassified
Description: CYPM1111-40LQXI
Produkt ist nicht verfügbar
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BC860BE6327HTSA1 INFINEON TECHNOLOGIES Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Produkt ist nicht verfügbar
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CYPD3177-24LQXQT INFINEON TECHNOLOGIES Infineon-EZ-PD_BCR_Datasheet_USB_Type-C_Port_Controller_for_Power_Sinks-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ce9d70ad Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
Produkt ist nicht verfügbar
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CYPD717140LQXQTXUMA1 INFINEON TECHNOLOGIES Infineon-CYPD7171_40LQXQ-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c8929aa4d018974ec9dc31d4d Category: Unclassified
Description: CYPD717140LQXQTXUMA1
Produkt ist nicht verfügbar
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CYPD717140LQXQXQLA1 INFINEON TECHNOLOGIES Infineon-CYPD7171_40LQXQ-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c8929aa4d018974ec9dc31d4d Category: Unclassified
Description: CYPD717140LQXQXQLA1
Produkt ist nicht verfügbar
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BC850BE6327HTSA1 INFINEON TECHNOLOGIES bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Current gain: 200
Mounting: SMD
Frequency: 250MHz
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
15000+0.043 EUR
Mindestbestellmenge: 15000
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BCW68FE6327HTSA1 INFINEON TECHNOLOGIES bcw67_bcw68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ad64a2033e Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 800mA; 330mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Current gain: 100
Mounting: SMD
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
12000+0.057 EUR
Mindestbestellmenge: 12000
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DDB2U60N12W1RFB11BPSA1 INFINEON TECHNOLOGIES Infineon-DDB2U60N12W1RF_B11-DataSheet-v02_21-EN.pdf?fileId=5546d4627956d53f0179796012a65183 Category: Unclassified
Description: DDB2U60N12W1RFB11BPSA1
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
24+135.29 EUR
Mindestbestellmenge: 24
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S26HL01GTFPBHB020 INFINEON TECHNOLOGIES Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 1Gb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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S26HL01GTFPBHB030 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 1Gb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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S26HL01GTFPBHI030 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 1Gb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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S26HL02GTFGBHM040 INFINEON TECHNOLOGIES Infineon-S26HS02GT_S26HS04GT_S26HL02GT_S26HL04GT_2Gb_4Gb_SEMPER_Flash_HYPERBUS_interface_1.8V_3.0V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f1bcc82c6e Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; HyperBus; 133MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...125°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 133MHz
Case: BGA24
Memory: 2Gb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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S26HL02GTFGBHM043 INFINEON TECHNOLOGIES Infineon-S26HS02GT_S26HS04GT_S26HL02GT_S26HL04GT_2Gb_4Gb_SEMPER_Flash_HYPERBUS_interface_1.8V_3.0V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f1bcc82c6e Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; HyperBus; 133MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...125°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 133MHz
Case: BGA24
Memory: 2Gb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S26HL512TFPBHI000 INFINEON TECHNOLOGIES Infineon-AN200810_S25FL-P_(32_Mb_64_Mb)_Package_Routing_Guide-ApplicationNotes-v03_00-EN.pdf?fileId=8ac78c8c7cdc391c017d07432ba2664a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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S26HL512TFPBHI010 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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IRFS7434TRLPBF irfs7434pbf.pdf?fileId=5546d462533600a40153563a730021cc
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 320A; 294W; D2PAK,TO263AB; SMT
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: N
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 294W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 216nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+1.54 EUR
Mindestbestellmenge: 800
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CY8C4248LTI-L485 Infineon-PSoC_4_PSoC_4200L_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed894aa5a14&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; Core: 32-bit
Type of integrated circuit: PSoC microcontroller
Clock frequency: 48MHz
Mounting: SMD
Kind of core: 32-bit
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
260+10.7 EUR
Mindestbestellmenge: 260
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IPP015N04NGXKSA1 IPP015N04NG-DTE.pdf
IPP015N04NGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
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IPP015N04NF2SAKMA1 Infineon-IPP015N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce56640183175b60d92ae3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 895 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+1.26 EUR
Mindestbestellmenge: 100
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IPA65R190E6XKSA1 IPA65R190E6-DTE.pdf
IPA65R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 34W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.19Ω
Drain current: 20.2A
Gate-source voltage: ±20V
Power dissipation: 34W
Drain-source voltage: 650V
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.88 EUR
21+3.4 EUR
Mindestbestellmenge: 19
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IPA65R650CEXKSA1 IPA65R650CE-DTE.pdf
IPA65R650CEXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 28W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.65Ω
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 650V
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
81+0.89 EUR
Mindestbestellmenge: 60
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IPA65R380C6XKSA1 IPA65R380C6-DTE.pdf
IPA65R380C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.38Ω
Drain current: 10.6A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 650V
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
37+1.97 EUR
100+1.62 EUR
Mindestbestellmenge: 35
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IPS65R1K5CEAKMA1 IPS65R1K5CE-DTE.pdf
IPS65R1K5CEAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; 28W; IPAK SL
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.5Ω
Drain current: 3.1A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 650V
auf Bestellung 616 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
191+0.38 EUR
211+0.34 EUR
237+0.3 EUR
Mindestbestellmenge: 191
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IPL65R1K5C6SATMA1 IPL65R1K5C6S-DTE.pdf
IPL65R1K5C6SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3A; 26.6W; PG-VSON-4
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: SMD
Case: PG-VSON-4
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.5Ω
Drain current: 3A
Gate-source voltage: ±20V
Power dissipation: 26.6W
Drain-source voltage: 650V
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
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IPP65R095C7XKSA1 IPP65R095C7-DTE.pdf
IPP65R095C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO220-3
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: PG-TO220-3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 95mΩ
Drain current: 24A
Gate-source voltage: ±20V
Power dissipation: 128W
Drain-source voltage: 650V
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.23 EUR
19+3.93 EUR
50+3.73 EUR
100+3.36 EUR
Mindestbestellmenge: 17
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IPW65R420CFDFKSA1 IPW65R420CFD-DTE.pdf
IPW65R420CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO247-3
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: THT
Case: PG-TO247-3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.42Ω
Drain current: 8.7A
Gate-source voltage: ±20V
Power dissipation: 83.3W
Drain-source voltage: 650V
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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IPA60R650CEXKSA1 IPA60R650CE-DTE.pdf
IPA60R650CEXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 28W; TO220FP
Technology: CoolMOS™ CE
Kind of channel: enhancement
Mounting: THT
Case: TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.65Ω
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 600V
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.34 EUR
62+1.16 EUR
73+0.99 EUR
Mindestbestellmenge: 54
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BSP135H6906XTSA1 Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 120mA; 1.8W; PG-SOT223; SMT
Mounting: SMD
Drain current: 0.12A
Power dissipation: 1.8W
Gate-source voltage: 20V
On-state resistance: 30Ω
Drain-source voltage: 600V
Application: automotive industry
Case: PG-SOT223
Electrical mounting: SMT
Type of transistor: N-MOSFET
Technology: SIPMOS™
Gate charge: 4.9nC
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.99 EUR
Mindestbestellmenge: 1000
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IRFR2407TRPBF irfr2407pbf.pdf
IRFR2407TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFR360FH6327XTSA1 BFR360F.pdf
BFR360FH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Kind of transistor: RF
Case: TSFP-3
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 35mA
Power dissipation: 0.21W
Collector-emitter voltage: 6V
Frequency: 14GHz
Current gain: 90...160
Polarisation: bipolar
auf Bestellung 2801 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
348+0.21 EUR
391+0.18 EUR
459+0.16 EUR
516+0.14 EUR
569+0.13 EUR
625+0.11 EUR
Mindestbestellmenge: 278
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IPD70R1K4P7SAUMA1 IPD70R1K4P7S.pdf
IPD70R1K4P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2482 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
152+0.47 EUR
182+0.39 EUR
191+0.38 EUR
Mindestbestellmenge: 120
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IPD70R1K4CEAUMA1 IPD70R1K4CE.pdf
IPD70R1K4CEAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.4A; 53W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.4A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 10.5nC
Produkt ist nicht verfügbar
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IPD70R2K0CEAUMA1 IPD70R2K0CE.pdf
IPD70R2K0CEAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.6A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 7.8nC
Produkt ist nicht verfügbar
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SGW50N60HS SGW50N60HS.pdf
SGW50N60HS
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 416W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC313N10N3RX1SA2 Infineon-IPC313N10N3R-DS-v02_00-EN.pdf?fileId=5546d462525dbac4015287a4906625ca
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 2A; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 2A
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 22165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.02 EUR
Mindestbestellmenge: 12
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BAT1502ELE6327XTMA1 Infineon-BAT15-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895df9e4e74
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT1504RE6152HTSA1 Infineon-BAT15-04R-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389615154e83
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
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BAT15099E6433HTMA1 INFNS15420-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD
Type of diode: Schottky switching
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA50R280CEXKSA2 IPA50R280CE-DTE.pdf
IPA50R280CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 30.4W; TO220FP
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.28Ω
Drain current: 7.5A
Gate-source voltage: ±20V
Power dissipation: 30.4W
Drain-source voltage: 500V
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220FP
Kind of package: tube
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
42+1.7 EUR
Mindestbestellmenge: 40
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IMW120R020M1HXKSA1 IMW120R020M1H.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 71A
Pulsed drain current: 213A
Power dissipation: 188W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C3866AXI-039 Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CY8C3866AXI-039
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+26.87 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
CY8C3866PVI-021 Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CY8C3866PVI-021
auf Bestellung 390 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+24.9 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IPP220N25NFDAKSA1 IPP220N25NFD-DTE.pdf
IPP220N25NFDAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 61A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 61A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ FD
Produkt ist nicht verfügbar
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ETD540N22P60HPSA1 ETD540N22P60_ETT540N22P60.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 542A; BG-PB60ECO-1; Ufmax: 1.73V
Gate current: 250mA
Max. forward voltage: 1.73V
Load current: 542A
Max. load current: 700A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 16.3kA
Case: BG-PB60ECO-1
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPP12CN10LGXKSA1 IPP12CN10LG-DTE.pdf
IPP12CN10LGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; 125W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain current: 69A
Drain-source voltage: 100V
Power dissipation: 125W
Produkt ist nicht verfügbar
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BSS138IXTSA1 Infineon-BSS138I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421e00e1d4c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
676+0.11 EUR
848+0.084 EUR
1137+0.063 EUR
1263+0.057 EUR
1352+0.053 EUR
3000+0.05 EUR
Mindestbestellmenge: 455
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IRFR5505TRPBF description irfr5505.pdf
IRFR5505TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2964 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.56 EUR
86+0.84 EUR
93+0.77 EUR
106+0.68 EUR
250+0.62 EUR
500+0.58 EUR
1000+0.53 EUR
2000+0.49 EUR
Mindestbestellmenge: 46
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IRFB7546PBF IRFB7546PBF.pdf
IRFB7546PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 99W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 99W
Case: TO220AB
On-state resistance: 7.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 58nC
auf Bestellung 1285 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
87+0.83 EUR
93+0.77 EUR
Mindestbestellmenge: 68
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IDW75D65D1XKSA1 Infineon-IDW75D65D1-DS-v02_01-EN.pdf?fileId=5546d4624a0bf290014a5670e9cd3eeb
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 75A; tube; Ifsm: 580A; TO247-3; 163W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 75A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 580A
Case: TO247-3
Max. forward voltage: 1.28V
Power dissipation: 163W
Produkt ist nicht verfügbar
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IPB017N10N5LFATMA1 Infineon-IPB017N10N5LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b379cf73c7f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 313W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
On-state resistance: 1.5mΩ
Drain current: 180A
Drain-source voltage: 100V
Power dissipation: 313W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 195nC
Produkt ist nicht verfügbar
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IPB120N04S402ATMA1 Infineon-IPP_B_I120N04S4_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c33093d5d37&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 158W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 158W
Case: D2PAK; TO263
On-state resistance: 1.58mΩ
Mounting: SMD
Gate charge: 134nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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IPG20N04S4L11AATMA1 IPG20N04S4L-11A_DS_1_0.pdf?fileId=5546d4614815da88014821772fae00b5
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPG20N04S4L11AATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.68 EUR
Mindestbestellmenge: 5000
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IPB180P04P4L02ATMA2 IPB180P04P4L02.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -140A; Idm: -720A; 150W
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -140A
Pulsed drain current: -720A
Power dissipation: 150W
Case: PG-TO263-7
Gate-source voltage: -16...5V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPD04P10PGBTMA1 SPD04P10PGBTMA1-dte.pdf
SPD04P10PGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; 38W; PG-TO252-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4A
Power dissipation: 38W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Produkt ist nicht verfügbar
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2EDF7275FXUMA1 2EDF7xx5F_K_H.pdf
2EDF7275FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Kind of package: reel; tape
Type of integrated circuit: driver
Case: PG-DSO-16
Technology: EiceDRIVER™
Mounting: SMD
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Number of channels: 2
Output current: -8...4A
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
Produkt ist nicht verfügbar
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AUIRL1404ZSTRL auirl1404s.pdf
AUIRL1404ZSTRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 790A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPW35N60CFDFKSA1 SPW35N60CFD_Rev.1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c05a24651
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 34.1A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 34.1A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 212nC
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+9.82 EUR
60+8.84 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N06S214ATMA2 Infineon-IPD50N06S2_14-DS-v01_01-en.pdf?fileId=db3a304412b407950112b43351315b1a&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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GS0650306LRMRXUSA1 Infineon-GS-065-030-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e5d762df9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: GS0650306LRMRXUSA1
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+10.08 EUR
Mindestbestellmenge: 250
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IPB180N04S4H0ATMA1 IPB180N04S4H0.pdf
IPB180N04S4H0ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W
Case: PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Drain current: 180A
Drain-source voltage: 40V
Power dissipation: 250W
Technology: OptiMOS™ T2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 173nC
Produkt ist nicht verfügbar
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CYPM1111-40LQXI Infineon-PMG1-S1_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea45a6733a
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CYPM1111-40LQXI
Produkt ist nicht verfügbar
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BC860BE6327HTSA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Produkt ist nicht verfügbar
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CYPD3177-24LQXQT Infineon-EZ-PD_BCR_Datasheet_USB_Type-C_Port_Controller_for_Power_Sinks-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ce9d70ad
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
Produkt ist nicht verfügbar
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CYPD717140LQXQTXUMA1 Infineon-CYPD7171_40LQXQ-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c8929aa4d018974ec9dc31d4d
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CYPD717140LQXQTXUMA1
Produkt ist nicht verfügbar
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CYPD717140LQXQXQLA1 Infineon-CYPD7171_40LQXQ-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c8929aa4d018974ec9dc31d4d
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CYPD717140LQXQXQLA1
Produkt ist nicht verfügbar
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BC850BE6327HTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Current gain: 200
Mounting: SMD
Frequency: 250MHz
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.043 EUR
Mindestbestellmenge: 15000
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BCW68FE6327HTSA1 bcw67_bcw68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ad64a2033e
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 800mA; 330mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Current gain: 100
Mounting: SMD
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12000+0.057 EUR
Mindestbestellmenge: 12000
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DDB2U60N12W1RFB11BPSA1 Infineon-DDB2U60N12W1RF_B11-DataSheet-v02_21-EN.pdf?fileId=5546d4627956d53f0179796012a65183
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: DDB2U60N12W1RFB11BPSA1
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+135.29 EUR
Mindestbestellmenge: 24
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S26HL01GTFPBHB020 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 1Gb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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S26HL01GTFPBHB030
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 1Gb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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S26HL01GTFPBHI030
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 1Gb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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S26HL02GTFGBHM040 Infineon-S26HS02GT_S26HS04GT_S26HL02GT_S26HL04GT_2Gb_4Gb_SEMPER_Flash_HYPERBUS_interface_1.8V_3.0V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f1bcc82c6e
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; HyperBus; 133MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...125°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 133MHz
Case: BGA24
Memory: 2Gb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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S26HL02GTFGBHM043 Infineon-S26HS02GT_S26HS04GT_S26HL02GT_S26HL04GT_2Gb_4Gb_SEMPER_Flash_HYPERBUS_interface_1.8V_3.0V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f1bcc82c6e
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; HyperBus; 133MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...125°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 133MHz
Case: BGA24
Memory: 2Gb FLASH
Interface: HyperBus
Application: automotive
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S26HL512TFPBHI000 Infineon-AN200810_S25FL-P_(32_Mb_64_Mb)_Package_Routing_Guide-ApplicationNotes-v03_00-EN.pdf?fileId=8ac78c8c7cdc391c017d07432ba2664a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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S26HL512TFPBHI010
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of interface: serial
Operating frequency: 166MHz
Case: BGA24
Memory: 512Mb FLASH
Interface: HyperBus
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Produkt ist nicht verfügbar
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