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S25FL128SAGNFA003 INFINEON TECHNOLOGIES Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Operating frequency: 133MHz
Produkt ist nicht verfügbar
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S25FL128SAGNFB000 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL128SAGNFB003 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S25FL128SAGNFI010 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL128SAGNFI013 INFINEON TECHNOLOGIES 001-98283%20Rev%20T.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S25FL128SAGNFM000 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...125°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL128SAGNFM003 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...125°C
Operating frequency: 133MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S25FL128SAGNFV000 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL128SAGNFV003 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BC847CE6433HTMA1 INFINEON TECHNOLOGIES bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.022 EUR
Mindestbestellmenge: 10000
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BSS119NH6327XTSA1 BSS119NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A792634BB8910B&compId=BSS119NH6327XTSA1.pdf?ci_sign=a5f53f11c07260c48f5cedd73fc0842250fc0053 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23
Power dissipation: 0.5W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Case: SOT23
Polarisation: unipolar
Drain current: 0.19A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
auf Bestellung 3607 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
379+0.19 EUR
424+0.17 EUR
582+0.12 EUR
658+0.11 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 313
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IRFS7734TRLPBF IRFS7734TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBF008A81DDA143&compId=IRFS7734TRLPBF.pdf?ci_sign=378c073419cbee0051b53b13427597d9b9d84be5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 290W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 778 Stücke:
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51+1.42 EUR
55+1.32 EUR
100+1.26 EUR
250+1.13 EUR
500+1.07 EUR
Mindestbestellmenge: 51
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IRFS4615TRLPBF IRFS4615TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C919EF3AF7F1A303005056AB0C4F&compId=irfs4615pbf.pdf?ci_sign=00aacefc98a77bbdafb41717ba543c793224741a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKCM15L60GAXKMA1 INFINEON TECHNOLOGIES Infineon-IKCM15L60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb71486178f7 Category: Motor and PWM drivers
Description: IC: driver; half-bridge; PowerDIP24; 15A; 600V; Uin: 13.5÷18.5V
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: PowerDIP24
Output current: 15A
Output voltage: 600V
Mounting: THT
Operating temperature: -40...125°C
Input voltage: 13.5...18.5V
Maximum output current: 15A
Frequency: 20kHz
Supply voltage: 14.5...18.5V
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
14+12.63 EUR
42+11.37 EUR
Mindestbestellmenge: 14
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BSC009NE2LS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2253B0CCE411C&compId=BSC009NE2LS5-DTE.pdf?ci_sign=cc7dc6f544cdea8ffdc22bc994ff5b04e5a9b00b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKCM15H60GAXKMA2 IKCM15H60GAXKMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACE685ADE5B3D7&compId=IKCM15H60GA.pdf?ci_sign=b05a44ba28f3534652439353305f4e3dde92d0c0 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.58 EUR
8+10.02 EUR
10+9.84 EUR
Mindestbestellmenge: 7
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BAR9002ELE6327XTMA1 INFINEON TECHNOLOGIES Infineon-BAR90-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895cd694e6e Category: Unclassified
Description: BAR9002ELE6327XTMA1
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
15000+0.083 EUR
Mindestbestellmenge: 15000
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IKW50N120CS7XKSA1 INFINEON TECHNOLOGIES Infineon-IKW50N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d8862059d Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 82A; 428W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
30+6.61 EUR
Mindestbestellmenge: 30
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BSP322PH6327XTSA1 BSP322PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA921AA3AD6611CC&compId=BSP322PH6327XTSA1-dte.pdf?ci_sign=c8cce04bab6e5a8cf722ea0efeae955fac952ad3 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Kind of channel: enhancement
Mounting: SMD
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1A
On-state resistance: 0.8Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
118+0.61 EUR
131+0.55 EUR
148+0.48 EUR
250+0.43 EUR
Mindestbestellmenge: 71
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ISZ0702NLSATMA1 INFINEON TECHNOLOGIES Infineon-ISZ0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd7e5c9c6e0d Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.61 EUR
Mindestbestellmenge: 5000
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ISC0702NLSATMA1 INFINEON TECHNOLOGIES Infineon-ISC0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd752aa46df2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 135A; 100W; PG-TDSON-8; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 135A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: 20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.83 EUR
Mindestbestellmenge: 5000
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IPP075N15N3GXKSA1 IPP075N15N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC81F7082D211C&compId=IPP075N15N3G-DTE.pdf?ci_sign=2206d84c866b44030e934a449c4dbb0ec14767f4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.93 EUR
50+2.03 EUR
100+1.87 EUR
250+1.72 EUR
Mindestbestellmenge: 19
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IPP126N10N3GXKSA1 IPP126N10N3GXKSA1 INFINEON TECHNOLOGIES IPP126N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Power dissipation: 94W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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BCV27E6327 BCV27E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869911BE77406469&compId=BCV27E6327.pdf?ci_sign=0b7df3e49f8a209e013846618a78af40dc82aaae Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Kind of transistor: Darlington
auf Bestellung 2764 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
242+0.3 EUR
428+0.17 EUR
639+0.11 EUR
1000+0.096 EUR
Mindestbestellmenge: 179
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FS150R12KE3BOSA1 INFINEON TECHNOLOGIES Infineon-FS150R12KE3-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b4311d745388 Category: IGBT modules
Description: Module: IGBT
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)
10+184.84 EUR
Mindestbestellmenge: 10
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IGZ100N65H5XKSA1 IGZ100N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B38AF53C07CFA8&compId=IGZ100N65H5XKSA1-DTE.pdf?ci_sign=46f30b547367da2b7884cb375a23f6457f242998 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 101A; 268W; TO247-4; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 268W
Case: TO247-4
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Turn-on time: 40ns
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 101A
Pulsed collector current: 400A
Manufacturer series: H5
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IPN80R4K5P7ATMA1 IPN80R4K5P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFE5BB2BC3FF3D1&compId=IPN80R4K5P7.pdf?ci_sign=181b854c7a65f95ea9d97b62a47f753309e2776a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 4nC
On-state resistance: 4.5Ω
Drain current: 1A
Power dissipation: 6W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
auf Bestellung 2068 Stücke:
Lieferzeit 14-21 Tag (e)
87+0.83 EUR
102+0.7 EUR
114+0.63 EUR
131+0.55 EUR
Mindestbestellmenge: 87
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IPN80R600P7ATMA1 IPN80R600P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDF1FF656693D1&compId=IPN80R600P7.pdf?ci_sign=74698a736421a2fe8081b11c8402fd2740b28ada Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223; ESD
Mounting: SMD
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 0.6Ω
Drain current: 5.5A
Power dissipation: 7.4W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: PG-SOT223
Type of transistor: N-MOSFET
Kind of package: reel
Produkt ist nicht verfügbar
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IPN80R2K4P7ATMA1 IPN80R2K4P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDB6243C3F13D1&compId=IPN80R2K4P7.pdf?ci_sign=fc60aaeba15bb57be6f1214d4477212da724015e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 8nC
On-state resistance: 2.4Ω
Drain current: 1.7A
Power dissipation: 6.3W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R3K3P7ATMA1 IPN80R3K3P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDA2691FCDB3D1&compId=IPN80R3K3P7.pdf?ci_sign=cb7c353b6e773d711c2d3bf644455832fa1bcb8a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 6nC
On-state resistance: 3.3Ω
Drain current: 1.3A
Power dissipation: 6.1W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
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IPN80R750P7ATMA1 IPN80R750P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDE5E5617E13D1&compId=IPN80R750P7.pdf?ci_sign=9a67d757292591395f7dbeffbc47c891b90039e1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 0.75Ω
Drain current: 4.6A
Power dissipation: 7.2W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPD200N15N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD_BIP_200N15N3-DS-v02_07-en.pdf?fileId=db3a304319c6f18c0119cd1cc23279be Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W
Power dissipation: 150W
Case: PG-TO252-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 20mΩ
Gate-source voltage: ±20V
Drain current: 40A
Drain-source voltage: 150V
Pulsed drain current: 200A
Produkt ist nicht verfügbar
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BFS481H6327XTSA1 BFS481H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998BC2B95CA8C9820&compId=BFS481.pdf?ci_sign=0ca4fc8b068827a5810c381b8177efadd7b9a937 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 12V; 20mA; 0.175W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT363
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Produkt ist nicht verfügbar
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SGB02N120 SGB02N120 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58D27D01791E74A&compId=SGB02N120.pdf?ci_sign=716fc339a4ef5be4f99c09e2af256bd2f01bdce2 Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.8A; 62W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 2.8A
Power dissipation: 62W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 9.6A
Mounting: SMD
Kind of package: reel
Turn-on time: 40ns
Turn-off time: 375ns
Produkt ist nicht verfügbar
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IRFR3711TRPBF IRFR3711TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C40AD4DECBF1A303005056AB0C4F&compId=irfr3711pbf.pdf?ci_sign=e542c345ad24298e236838b7358e141f237c1372 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3411TRPBF IRFR3411TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCFB187B1515EA&compId=IRFR3411TRPBF.pdf?ci_sign=11f0934eda20c38577d0642d48d0a25e8d51146b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3504ZTRPBF IRFR3504ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCFE6C57FBD5EA&compId=IRFR3504ZTRPBF.pdf?ci_sign=2c657853350c22e49e47ff7c72379d04a5e64df2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3518TRPBF IRFR3518TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C2E3BD2FD4F1A303005056AB0C4F&compId=irfr3518pbf.pdf?ci_sign=8841df223e1115ba12e6c163db726562d0dfd45c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 38A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 38A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3910TRLPBF IRFR3910TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C4451FC688F1A303005056AB0C4F&compId=irfr3910pbf.pdf?ci_sign=fc030bc5c689d70170e8b659f1ec026a659ed3e5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRFR3504Z AUIRFR3504Z INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04594540DAEF1A6F5005056AB5A8F&compId=auirfr3504.pdf?ci_sign=8e85afb18f8596295fe27b7c5abd1eccce150a2b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Gate charge: 30nC
Produkt ist nicht verfügbar
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BCX41E6327 BCX41E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD61FB8EFEF35EA&compId=BCX41.pdf?ci_sign=88a196f359f0852bc6b8b0beaffb5759891cb7d5 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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IPB120N06S402ATMA2 IPB120N06S402ATMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA33EE30DC5A143&compId=IPB120N06S402.pdf?ci_sign=a3963e913efd6ba8353dcacf46bf0d9b34ccad38 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 120A; 188W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 150nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC120N06S5L032ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC120N06S5L032-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f468428461b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 364A
Power dissipation: 94W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 51.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC120N06S5N017ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC120N06S5N017-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f48ce58a61bc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 757A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 95.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD60R360P7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 9A; 41W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 41W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Electrical mounting: SMT
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IRF100S201 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CFB8F0CDC860D5&compId=IRF100x201.pdf?ci_sign=06ba51b9318616c3f07bc1af27d7d1e387b87aee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 255nC
Kind of channel: enhancement
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IRF100P218AKMA1 INFINEON TECHNOLOGIES Infineon-IRF100P218-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d3eca4b83 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
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BSS314PEH6327XTSA1 BSS314PEH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928A4924BFF1CC&compId=BSS314PEH6327XTSA1-dte.pdf?ci_sign=baff2f0168140fd475d707cb4164bca628a06e7f Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.14Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT23
Kind of channel: enhancement
Mounting: SMD
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IRL40T209ATMA2 INFINEON TECHNOLOGIES Infineon-IRL40T209-DS-v01_00-EN.pdf?fileId=5546d46265413c11016542adc035132a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 586A; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 586A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IAUT165N08S5N029ATMA2 IAUT165N08S5N029ATMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA57E319ED78BF&compId=IAUT165N08S5N029.pdf?ci_sign=1f09f84ff53a379526d421e7b22fd84aaec4af51 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8
Case: PG-HSOF-8
On-state resistance: 2.9mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 165A
Power dissipation: 167W
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Gate charge: 31nC
Produkt ist nicht verfügbar
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IAUT200N08S5N023ATMA1 IAUT200N08S5N023ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA5C4837FC78BF&compId=IAUT200N08S5N023.pdf?ci_sign=e5ceb0a849d4b34f35c5dfe8cc4826d69c46c355 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 200A
Power dissipation: 200W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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SMBT3906E6327HTSA1 SMBT3906E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7DE5C88B86469&compId=SMBT3906E6327.pdf?ci_sign=c9d3548f357d41a291b0ddb7dd0abd5245648fbc Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.33W; SOT23
Case: SOT23
Type of transistor: PNP
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.33W
Collector-emitter voltage: 40V
Frequency: 250MHz
Polarisation: bipolar
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FP06R12W1T4B3BOMA1 FP06R12W1T4B3BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8B20C73D5053D7&compId=FP06R12W1T4B3.pdf?ci_sign=b0d07d5c11c3511c198ac0969a13834d175d08d9 Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Technology: EasyPIM™ 1B
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 6A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Power dissipation: 94W
Max. off-state voltage: 1.2kV
Case: AG-EASY1B-1
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
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FP25R12W1T7B11BPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE995D8C237D8D178BF&compId=FP25R12W1T7_B11.pdf?ci_sign=a732f48776801bfedc233a3fbcc66a36b16c6886 Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: AG-EASY1B-2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Technology: EasyPIM™ 1B
Mechanical mounting: screw
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F417MR12W1M1HB76BPSA1 INFINEON TECHNOLOGIES F4-17MR12W1M1H_B76_Rev0.20_9-9-22.pdf Category: Transistors - Unclassified
Description: F417MR12W1M1HB76BPSA1
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IPB030N08N3GATMA1 IPB030N08N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAAFE16A04211C&compId=IPB030N08N3G-DTE.pdf?ci_sign=908c3cc80a30d3cf651dff5baa321b44d762a716 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IPD30N08S222ATMA1 IPD30N08S222ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA439EDF2288143&compId=IPD30N08S222.pdf?ci_sign=fd03e03efa6b060e8b258f8d25af59f138db872f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 30A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 30A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 21.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Technology: OptiMOS™
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IPD30N08S2L21ATMA1 INFINEON TECHNOLOGIES Infineon-IPD30N08S2L_21-DS-v01_00-en.pdf?fileId=db3a304412b407950112b426f6a33b23&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 75V; 30A; Idm: 120A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 136W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS®
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BSC030N08NS5ATMA1 BSC030N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2A1DE2482E11C&compId=BSC030N08NS5-DTE.pdf?ci_sign=e2923a653bbc49ae9f0a658a51ab2dbc6a80e934 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUZ30N08S5N186ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ30N08S5N186-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd436b20214 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7A; Idm: 120A; 41W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7A
Pulsed drain current: 120A
Power dissipation: 41W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 22.7mΩ
Mounting: SMD
Gate charge: 12.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S25FL128SAGNFA003 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Operating frequency: 133MHz
Produkt ist nicht verfügbar
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S25FL128SAGNFB000
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGNFB003
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGNFI010 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGNFI013 001-98283%20Rev%20T.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGNFM000 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...125°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGNFM003
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...125°C
Operating frequency: 133MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGNFV000 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGNFV003 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC847CE6433HTMA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.022 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
BSS119NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A792634BB8910B&compId=BSS119NH6327XTSA1.pdf?ci_sign=a5f53f11c07260c48f5cedd73fc0842250fc0053
BSS119NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23
Power dissipation: 0.5W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Case: SOT23
Polarisation: unipolar
Drain current: 0.19A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
auf Bestellung 3607 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
379+0.19 EUR
424+0.17 EUR
582+0.12 EUR
658+0.11 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7734TRLPBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBF008A81DDA143&compId=IRFS7734TRLPBF.pdf?ci_sign=378c073419cbee0051b53b13427597d9b9d84be5
IRFS7734TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 290W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 778 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
55+1.32 EUR
100+1.26 EUR
250+1.13 EUR
500+1.07 EUR
Mindestbestellmenge: 51
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IRFS4615TRLPBF pVersion=0046&contRep=ZT&docId=E221C919EF3AF7F1A303005056AB0C4F&compId=irfs4615pbf.pdf?ci_sign=00aacefc98a77bbdafb41717ba543c793224741a
IRFS4615TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKCM15L60GAXKMA1 Infineon-IKCM15L60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb71486178f7
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; half-bridge; PowerDIP24; 15A; 600V; Uin: 13.5÷18.5V
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: PowerDIP24
Output current: 15A
Output voltage: 600V
Mounting: THT
Operating temperature: -40...125°C
Input voltage: 13.5...18.5V
Maximum output current: 15A
Frequency: 20kHz
Supply voltage: 14.5...18.5V
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+12.63 EUR
42+11.37 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
BSC009NE2LS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2253B0CCE411C&compId=BSC009NE2LS5-DTE.pdf?ci_sign=cc7dc6f544cdea8ffdc22bc994ff5b04e5a9b00b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKCM15H60GAXKMA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACE685ADE5B3D7&compId=IKCM15H60GA.pdf?ci_sign=b05a44ba28f3534652439353305f4e3dde92d0c0
IKCM15H60GAXKMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.58 EUR
8+10.02 EUR
10+9.84 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
BAR9002ELE6327XTMA1 Infineon-BAR90-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895cd694e6e
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: BAR9002ELE6327XTMA1
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.083 EUR
Mindestbestellmenge: 15000
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N120CS7XKSA1 Infineon-IKW50N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d8862059d
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 82A; 428W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+6.61 EUR
Mindestbestellmenge: 30
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BSP322PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA921AA3AD6611CC&compId=BSP322PH6327XTSA1-dte.pdf?ci_sign=c8cce04bab6e5a8cf722ea0efeae955fac952ad3
BSP322PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Kind of channel: enhancement
Mounting: SMD
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1A
On-state resistance: 0.8Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
118+0.61 EUR
131+0.55 EUR
148+0.48 EUR
250+0.43 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
ISZ0702NLSATMA1 Infineon-ISZ0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd7e5c9c6e0d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.61 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
ISC0702NLSATMA1 Infineon-ISC0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd752aa46df2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 135A; 100W; PG-TDSON-8; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 135A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: 20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.83 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IPP075N15N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC81F7082D211C&compId=IPP075N15N3G-DTE.pdf?ci_sign=2206d84c866b44030e934a449c4dbb0ec14767f4
IPP075N15N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
50+2.03 EUR
100+1.87 EUR
250+1.72 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IPP126N10N3GXKSA1 IPP126N10N3G-DTE.pdf
IPP126N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Power dissipation: 94W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BCV27E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869911BE77406469&compId=BCV27E6327.pdf?ci_sign=0b7df3e49f8a209e013846618a78af40dc82aaae
BCV27E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Kind of transistor: Darlington
auf Bestellung 2764 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
242+0.3 EUR
428+0.17 EUR
639+0.11 EUR
1000+0.096 EUR
Mindestbestellmenge: 179
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FS150R12KE3BOSA1 Infineon-FS150R12KE3-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b4311d745388
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+184.84 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IGZ100N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B38AF53C07CFA8&compId=IGZ100N65H5XKSA1-DTE.pdf?ci_sign=46f30b547367da2b7884cb375a23f6457f242998
IGZ100N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 101A; 268W; TO247-4; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 268W
Case: TO247-4
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Turn-on time: 40ns
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 101A
Pulsed collector current: 400A
Manufacturer series: H5
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN80R4K5P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFE5BB2BC3FF3D1&compId=IPN80R4K5P7.pdf?ci_sign=181b854c7a65f95ea9d97b62a47f753309e2776a
IPN80R4K5P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 4nC
On-state resistance: 4.5Ω
Drain current: 1A
Power dissipation: 6W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
auf Bestellung 2068 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
87+0.83 EUR
102+0.7 EUR
114+0.63 EUR
131+0.55 EUR
Mindestbestellmenge: 87
Im Einkaufswagen  Stück im Wert von  UAH
IPN80R600P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDF1FF656693D1&compId=IPN80R600P7.pdf?ci_sign=74698a736421a2fe8081b11c8402fd2740b28ada
IPN80R600P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223; ESD
Mounting: SMD
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 0.6Ω
Drain current: 5.5A
Power dissipation: 7.4W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: PG-SOT223
Type of transistor: N-MOSFET
Kind of package: reel
Produkt ist nicht verfügbar
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IPN80R2K4P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDB6243C3F13D1&compId=IPN80R2K4P7.pdf?ci_sign=fc60aaeba15bb57be6f1214d4477212da724015e
IPN80R2K4P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 8nC
On-state resistance: 2.4Ω
Drain current: 1.7A
Power dissipation: 6.3W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R3K3P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDA2691FCDB3D1&compId=IPN80R3K3P7.pdf?ci_sign=cb7c353b6e773d711c2d3bf644455832fa1bcb8a
IPN80R3K3P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 6nC
On-state resistance: 3.3Ω
Drain current: 1.3A
Power dissipation: 6.1W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R750P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDE5E5617E13D1&compId=IPN80R750P7.pdf?ci_sign=9a67d757292591395f7dbeffbc47c891b90039e1
IPN80R750P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 0.75Ω
Drain current: 4.6A
Power dissipation: 7.2W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPD200N15N3GATMA1 Infineon-IPD_BIP_200N15N3-DS-v02_07-en.pdf?fileId=db3a304319c6f18c0119cd1cc23279be
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W
Power dissipation: 150W
Case: PG-TO252-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 20mΩ
Gate-source voltage: ±20V
Drain current: 40A
Drain-source voltage: 150V
Pulsed drain current: 200A
Produkt ist nicht verfügbar
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BFS481H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998BC2B95CA8C9820&compId=BFS481.pdf?ci_sign=0ca4fc8b068827a5810c381b8177efadd7b9a937
BFS481H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 12V; 20mA; 0.175W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT363
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Produkt ist nicht verfügbar
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SGB02N120 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58D27D01791E74A&compId=SGB02N120.pdf?ci_sign=716fc339a4ef5be4f99c09e2af256bd2f01bdce2
SGB02N120
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.8A; 62W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 2.8A
Power dissipation: 62W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 9.6A
Mounting: SMD
Kind of package: reel
Turn-on time: 40ns
Turn-off time: 375ns
Produkt ist nicht verfügbar
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IRFR3711TRPBF pVersion=0046&contRep=ZT&docId=E221C40AD4DECBF1A303005056AB0C4F&compId=irfr3711pbf.pdf?ci_sign=e542c345ad24298e236838b7358e141f237c1372
IRFR3711TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3411TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCFB187B1515EA&compId=IRFR3411TRPBF.pdf?ci_sign=11f0934eda20c38577d0642d48d0a25e8d51146b
IRFR3411TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3504ZTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCFE6C57FBD5EA&compId=IRFR3504ZTRPBF.pdf?ci_sign=2c657853350c22e49e47ff7c72379d04a5e64df2
IRFR3504ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3518TRPBF pVersion=0046&contRep=ZT&docId=E221C2E3BD2FD4F1A303005056AB0C4F&compId=irfr3518pbf.pdf?ci_sign=8841df223e1115ba12e6c163db726562d0dfd45c
IRFR3518TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 38A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 38A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3910TRLPBF pVersion=0046&contRep=ZT&docId=E221C4451FC688F1A303005056AB0C4F&compId=irfr3910pbf.pdf?ci_sign=fc030bc5c689d70170e8b659f1ec026a659ed3e5
IRFR3910TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRFR3504Z pVersion=0046&contRep=ZT&docId=E1C04594540DAEF1A6F5005056AB5A8F&compId=auirfr3504.pdf?ci_sign=8e85afb18f8596295fe27b7c5abd1eccce150a2b
AUIRFR3504Z
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Gate charge: 30nC
Produkt ist nicht verfügbar
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BCX41E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD61FB8EFEF35EA&compId=BCX41.pdf?ci_sign=88a196f359f0852bc6b8b0beaffb5759891cb7d5
BCX41E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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IPB120N06S402ATMA2 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA33EE30DC5A143&compId=IPB120N06S402.pdf?ci_sign=a3963e913efd6ba8353dcacf46bf0d9b34ccad38
IPB120N06S402ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 120A; 188W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 150nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC120N06S5L032ATMA1 Infineon-IAUC120N06S5L032-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f468428461b1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 364A
Power dissipation: 94W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 51.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC120N06S5N017ATMA1 Infineon-IAUC120N06S5N017-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f48ce58a61bc
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 757A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 95.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD60R360P7SAUMA1 Infineon-IPD60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 9A; 41W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 41W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.4 EUR
Mindestbestellmenge: 2500
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IRF100S201 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CFB8F0CDC860D5&compId=IRF100x201.pdf?ci_sign=06ba51b9318616c3f07bc1af27d7d1e387b87aee
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 255nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF100P218AKMA1 Infineon-IRF100P218-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d3eca4b83
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
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BSS314PEH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928A4924BFF1CC&compId=BSS314PEH6327XTSA1-dte.pdf?ci_sign=baff2f0168140fd475d707cb4164bca628a06e7f
BSS314PEH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.14Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT23
Kind of channel: enhancement
Mounting: SMD
auf Bestellung 4669 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
459+0.16 EUR
593+0.12 EUR
659+0.11 EUR
828+0.086 EUR
1000+0.079 EUR
3000+0.07 EUR
Mindestbestellmenge: 358
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IRL40T209ATMA2 Infineon-IRL40T209-DS-v01_00-EN.pdf?fileId=5546d46265413c11016542adc035132a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 586A; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 586A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUT165N08S5N029ATMA2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA57E319ED78BF&compId=IAUT165N08S5N029.pdf?ci_sign=1f09f84ff53a379526d421e7b22fd84aaec4af51
IAUT165N08S5N029ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8
Case: PG-HSOF-8
On-state resistance: 2.9mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 165A
Power dissipation: 167W
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Gate charge: 31nC
Produkt ist nicht verfügbar
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IAUT200N08S5N023ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA5C4837FC78BF&compId=IAUT200N08S5N023.pdf?ci_sign=e5ceb0a849d4b34f35c5dfe8cc4826d69c46c355
IAUT200N08S5N023ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 200A
Power dissipation: 200W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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SMBT3906E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7DE5C88B86469&compId=SMBT3906E6327.pdf?ci_sign=c9d3548f357d41a291b0ddb7dd0abd5245648fbc
SMBT3906E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.33W; SOT23
Case: SOT23
Type of transistor: PNP
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.33W
Collector-emitter voltage: 40V
Frequency: 250MHz
Polarisation: bipolar
auf Bestellung 1770 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
625+0.11 EUR
767+0.093 EUR
847+0.085 EUR
977+0.073 EUR
1109+0.064 EUR
1257+0.057 EUR
Mindestbestellmenge: 385
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FP06R12W1T4B3BOMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8B20C73D5053D7&compId=FP06R12W1T4B3.pdf?ci_sign=b0d07d5c11c3511c198ac0969a13834d175d08d9
FP06R12W1T4B3BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Technology: EasyPIM™ 1B
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 6A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Power dissipation: 94W
Max. off-state voltage: 1.2kV
Case: AG-EASY1B-1
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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FP25R12W1T7B11BPSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995D8C237D8D178BF&compId=FP25R12W1T7_B11.pdf?ci_sign=a732f48776801bfedc233a3fbcc66a36b16c6886
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: AG-EASY1B-2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Produkt ist nicht verfügbar
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F417MR12W1M1HB76BPSA1 F4-17MR12W1M1H_B76_Rev0.20_9-9-22.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: F417MR12W1M1HB76BPSA1
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+110.25 EUR
Mindestbestellmenge: 24
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IPB030N08N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAAFE16A04211C&compId=IPB030N08N3G-DTE.pdf?ci_sign=908c3cc80a30d3cf651dff5baa321b44d762a716
IPB030N08N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 997 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.3 EUR
25+2.97 EUR
100+2.14 EUR
250+1.94 EUR
500+1.8 EUR
Mindestbestellmenge: 17
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IPD30N08S222ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA439EDF2288143&compId=IPD30N08S222.pdf?ci_sign=fd03e03efa6b060e8b258f8d25af59f138db872f
IPD30N08S222ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 30A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 30A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 21.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPD30N08S2L21ATMA1 Infineon-IPD30N08S2L_21-DS-v01_00-en.pdf?fileId=db3a304412b407950112b426f6a33b23&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 75V; 30A; Idm: 120A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 136W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS®
Produkt ist nicht verfügbar
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BSC030N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2A1DE2482E11C&compId=BSC030N08NS5-DTE.pdf?ci_sign=e2923a653bbc49ae9f0a658a51ab2dbc6a80e934
BSC030N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUZ30N08S5N186ATMA1 Infineon-IAUZ30N08S5N186-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd436b20214
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7A; Idm: 120A; 41W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7A
Pulsed drain current: 120A
Power dissipation: 41W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 22.7mΩ
Mounting: SMD
Gate charge: 12.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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