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IHW40N120R5XKSA1 IHW40N120R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCA5EF2915F820&compId=IHW40N120R5.pdf?ci_sign=ff87a8c36a7c399a49fec60936b41c23e7a4c9aa Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.53 EUR
16+4.75 EUR
21+3.55 EUR
22+3.35 EUR
30+3.22 EUR
Mindestbestellmenge: 13
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IKQ40N120CH3XKSA1 IKQ40N120CH3XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AFF7BE8F13C749&compId=IKQ40N120CH3.pdf?ci_sign=c8ed0c89fcc600022b2a871e0b32fde7f3676f73 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 76ns
Produkt ist nicht verfügbar
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IKQ40N120CT2XKSA1 IKQ40N120CT2XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AFD6AC8EDA0749&compId=IKQ40N120CT2.pdf?ci_sign=8253bd2051f94bd3337d2fb92cd05a3b6edcd14b Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 2
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 75ns
Produkt ist nicht verfügbar
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IKW40N120CS6XKSA1 IKW40N120CS6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE986B0A66D3DFBB8BF&compId=IKW40N120CS6.pdf?ci_sign=31fae688f4eaa08099e8297f1be2823d2dbebf7b Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.42 EUR
16+4.46 EUR
Mindestbestellmenge: 9
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IKW40N120H3FKSA1 IKW40N120H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4B1227AD871CC&compId=IKW40N120H3-DTE.pdf?ci_sign=f8b339f1e873d397d5d01461d09440706297c41f Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.18 EUR
12+5.99 EUR
Mindestbestellmenge: 8
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IKW40N120T2FKSA1 IKW40N120T2FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD0E2F7E6320259&compId=IKW40N120T2.pdf?ci_sign=6bbbb8c74de3acef3716a77652baf5b260d1e5ac Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 165A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.61 EUR
10+7.31 EUR
11+6.92 EUR
Mindestbestellmenge: 7
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IKY40N120CH3XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF3053B408E7820&compId=IKY40N120CH3.pdf?ci_sign=6f1d0b3f6ef77831abed12e2ffc7daa6f0f4c068 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Turn-off time: 306ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 59ns
Produkt ist nicht verfügbar
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IKY40N120CS6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF30BD6FCDAB820&compId=IKY40N120CS6.pdf?ci_sign=341ed47cf8e6482e67d81b7d878f560b2cace0b7 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Turn-off time: 342ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Produkt ist nicht verfügbar
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IPD090N03LGATMA1 IPD090N03LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F33308FC6DE11C&compId=IPD090N03LG-DTE.pdf?ci_sign=9a4be819311a50a24b55811cccea1abba829cef9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2162 Stücke:
Lieferzeit 14-21 Tag (e)
80+0.9 EUR
94+0.76 EUR
101+0.71 EUR
146+0.49 EUR
154+0.46 EUR
Mindestbestellmenge: 80
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IRL2203NSTRLPBF IRL2203NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22272FD5B2EC9F1A303005056AB0C4F&compId=irl2203nspbf.pdf?ci_sign=338ad334b3f34a2957cf0ae5f23cffd55bfac9a8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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PVT422PBF PVT422PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D6CE9F1E81EC&compId=pvt422.pdf?ci_sign=3f2ba5943339d5ad4b75c4067aaf5ceb997c203e description Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Switched voltage: 0...400V AC; 0...400V DC
Release time: 0.5ms
Manufacturer series: PVT422PbF
Control current: 2...25mA
Contacts configuration: DPST-NO
Max. operating current: 350mA
On-state resistance: 35Ω
Operate time: 2ms
Relay variant: MOSFET
Produkt ist nicht verfügbar
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PVT422SPBF PVT422SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D6CE9F1E81EC&compId=pvt422.pdf?ci_sign=3f2ba5943339d5ad4b75c4067aaf5ceb997c203e description Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 2ms
Release time: 0.5ms
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.9 EUR
8+9.27 EUR
9+8.75 EUR
Mindestbestellmenge: 7
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IGB20N65S5ATMA1 IGB20N65S5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB6C96BEB6D820&compId=IGB20N65S5.pdf?ci_sign=a4d8b063edbd433beb9ed958c8c2ba441c0328b3 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 28A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 28A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Turn-on time: 27ns
Gate charge: 48nC
Turn-off time: 137ns
Produkt ist nicht verfügbar
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IHW20N65R5XKSA1 IHW20N65R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC6BCE91BE1820&compId=IHW20N65R5.pdf?ci_sign=b44b2ed99f625095237ebaf7c9ffdee8198ae140 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 97nC
Turn-off time: 257ns
Produkt ist nicht verfügbar
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IKB20N65EH5ATMA1 IKB20N65EH5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD5B574119B820&compId=IKB20N65EH5.pdf?ci_sign=84117916d2af3cf46356ecf8de4185ed193d681c Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Gate charge: 48nC
Turn-off time: 183ns
auf Bestellung 919 Stücke:
Lieferzeit 14-21 Tag (e)
18+3.98 EUR
25+2.9 EUR
26+2.76 EUR
27+2.75 EUR
100+2.65 EUR
Mindestbestellmenge: 18
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SPD50N03S207GBTMA1 SPD50N03S207GBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4D5A62F654D811C&compId=SPD50N03S207G-DTE.pdf?ci_sign=068d79be9e9d324ac6f1de7a5a630c5f9ecd67a2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1418 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
106+0.67 EUR
112+0.64 EUR
115+0.62 EUR
500+0.6 EUR
Mindestbestellmenge: 103
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BSC050N03LSGATMA1 BSC050N03LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2FCC41651611C&compId=BSC050N03LSG-DTE.pdf?ci_sign=55fc8546e1bdca0ab93af1429ad045914edb6305 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC050N03MSGATMA1 BSC050N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2FE70931A411C&compId=BSC050N03MSG-DTE.pdf?ci_sign=30504bf576f6632aed8312b78da20e1992fd0544 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ050N03LSGATMA1 BSZ050N03LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E0EB1F2E8A11C&compId=BSZ050N03LSG-DTE.pdf?ci_sign=9f16a7c062b56041a9272d38bed4641b6e009ba8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ050N03MSGATMA1 BSZ050N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E131A2C06811C&compId=BSZ050N03MSG-DTE.pdf?ci_sign=2cf09708082e3be57659c3c3e831485885c116b9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPD050N03LGATMA1 IPD050N03LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F31FCD9EF4C11C&compId=IPD050N03LG-DTE.pdf?ci_sign=d06db5c93bba5c2107dc7137cf96d635f8618866 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 1646 Stücke:
Lieferzeit 14-21 Tag (e)
73+0.99 EUR
79+0.91 EUR
115+0.62 EUR
122+0.59 EUR
Mindestbestellmenge: 73
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SPA11N80C3 SPA11N80C3 INFINEON TECHNOLOGIES description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPP11N80C3 SPP11N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B2B1E5D4C00111BF&compId=SPP11N80C3-dte.pdf?ci_sign=b26c2386ea50a5506f83eacecebe4bf1a2b7bb44 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.8 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 19
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SPW11N80C3 SPW11N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B3FF4C2BAF7A71BF&compId=SPW11N80C3-DTE.pdf?ci_sign=a5731e027b48697bfb5b7b556dd38587c18e85a8 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7101TRPBF IRF7101TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F72EDED7238F1A303005056AB0C4F&compId=irf7101pbf.pdf?ci_sign=aaac22e0b6c73d3d5db65aef3b433a69d403b0bc Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRF7103TRPBF IRF7103TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F730DD100BCF1A303005056AB0C4F&compId=irf7103pbf.pdf?ci_sign=2b12eb75b5f6dce55c65084304d884f8b12d91e4 description Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Technology: HEXFET®
auf Bestellung 1684 Stücke:
Lieferzeit 14-21 Tag (e)
57+1.27 EUR
70+1.04 EUR
120+0.6 EUR
274+0.26 EUR
290+0.25 EUR
Mindestbestellmenge: 57
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IRF7104TRPBF IRF7104TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F73473BB245F1A303005056AB0C4F&compId=irf7104pbf.pdf?ci_sign=e5ad76f1ac31c77ea305a7fd6f10a5c85b412e65 description Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRF7105TRPBF IRF7105TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F73624E9CF8F1A303005056AB0C4F&compId=irf7105pbf.pdf?ci_sign=dd73476fc951e3f65fd1e97ec32dcb771610ef64 description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3978 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
167+0.43 EUR
193+0.37 EUR
215+0.33 EUR
345+0.21 EUR
365+0.2 EUR
Mindestbestellmenge: 120
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AUIRF7103QTR AUIRF7103QTR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F732C397812F1A303005056AB0C4F&compId=irf7103qpbf.pdf?ci_sign=6f2d86b4e3f859b06ae14d68aec215fa828791c2 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 2.4W
Gate-source voltage: ±20V
Technology: HEXFET®
Gate charge: 10nC
On-state resistance: 0.2Ω
Produkt ist nicht verfügbar
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IRF9310TRPBF IRF9310TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AF185413D2F1A303005056AB0C4F&compId=irf9310pbf.pdf?ci_sign=e3a7f7b06c7da9c24a173beec3710b94b88c4fe4 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3840 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.04 EUR
48+1.5 EUR
121+0.59 EUR
128+0.56 EUR
Mindestbestellmenge: 35
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IRFZ34NPBF IRFZ34NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E7D5055B0F1A6F5005056AB5A8F&compId=irfz34n.pdf?ci_sign=686bda4beadb73c469501e8a6160e62db2558a32 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 26A; 56W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 26A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 22.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 71 Stücke:
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71+1 EUR
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IRFZ34NSTRLPBF IRFZ34NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221CA5807D86BF1A303005056AB0C4F&compId=irfz34nspbf.pdf?ci_sign=2fff9063d2b86069a4b91f953d0d75984c82566e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 29A; 68W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 29A
Power dissipation: 68W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IPP055N03LGXKSA1 IPP055N03LGXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAC943DE51411C&compId=IPP055N03LG-DTE.pdf?ci_sign=4c046460a84c3cb82bd98e0e42db4e2dee8ace2f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO220-3-1
Mounting: THT
Case: PG-TO220-3-1
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.46 EUR
Mindestbestellmenge: 29
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BTS721L1 BTS721L1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD63E1D1A0DB5EA&compId=BTS721L1.pdf?ci_sign=dc89e9f4aa46a4b01ce52b4c4547a9f1890db8d6 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷6.3A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.9...6.3A
Mounting: SMD
Number of channels: 4
Case: DSO20
Supply voltage: 5...34V DC
On-state resistance: 25mΩ
Technology: Classic PROFET
Power dissipation: 3.7W
Kind of output: N-Channel
auf Bestellung 343 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.66 EUR
12+6.02 EUR
25+5.81 EUR
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IPD060N03LGATMA1 IPD060N03LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F322FAA4E5C11C&compId=IPD060N03LG-DTE.pdf?ci_sign=7dd05ce845a4f67fba2b0dcdc3fd5e00f47869b8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 56W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2479 Stücke:
Lieferzeit 14-21 Tag (e)
85+0.84 EUR
105+0.69 EUR
114+0.63 EUR
122+0.59 EUR
128+0.56 EUR
Mindestbestellmenge: 85
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IRFP4568PBF IRFP4568PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C084F1A6F5005056AB5A8F&compId=irfp4568pbf.pdf?ci_sign=cd4a3c3005dfa3acc21d8e71cc6c8608fe85a120 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 5.9mΩ
Gate-source voltage: ±30V
Gate charge: 151nC
Technology: HEXFET®
Power dissipation: 517W
Produkt ist nicht verfügbar
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IRFL024NTRPBF IRFL024NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BD84F5CA48F1A303005056AB0C4F&compId=irfl024npbf.pdf?ci_sign=82149718abf7d65abc0cc3f966ed8e67d81b09e0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IGP40N65F5XKSA1 IGP40N65F5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B357CE50A06FA8&compId=IGP40N65F5XKSA1-DTE.pdf?ci_sign=5364802f19d02231e857b5a684b7d43fa931e4d8 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 125W; TO220-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 476 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.62 EUR
21+3.49 EUR
24+3.03 EUR
25+2.86 EUR
26+2.79 EUR
Mindestbestellmenge: 20
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IGP40N65H5XKSA1 IGP40N65H5XKSA1 INFINEON TECHNOLOGIES DS_IGP_IGW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af52fd5b600b6 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; H5
Case: TO220-3
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 74A
Power dissipation: 250W
Collector-emitter voltage: 650V
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.72 EUR
41+1.77 EUR
43+1.67 EUR
Mindestbestellmenge: 27
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IGW40N65F5FKSA1 IGW40N65F5FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B357CE50A06FA8&compId=IGP40N65F5XKSA1-DTE.pdf?ci_sign=5364802f19d02231e857b5a684b7d43fa931e4d8 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.02 EUR
21+3.55 EUR
26+2.77 EUR
28+2.62 EUR
Mindestbestellmenge: 18
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IGW40N65H5FKSA1 IGW40N65H5FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDDBFF18CC50EC600D5&compId=IGW40N65H5FKSA1.pdf?ci_sign=ae5af7233e9af26b6ec8388b5d40301b249f336e Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.72 EUR
23+3.25 EUR
24+3.07 EUR
Mindestbestellmenge: 16
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IHW40N65R5XKSA1 IHW40N65R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCF82A829F1820&compId=IHW40N65R5.pdf?ci_sign=f2b3df89ecc5884a555765950a699d043f13b658 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 152W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 152W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 273ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IHW40N65R6XKSA1 IHW40N65R6XKSA1 INFINEON TECHNOLOGIES Infineon-IHW40N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e19dad7275 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.29 EUR
26+2.82 EUR
27+2.66 EUR
30+2.63 EUR
Mindestbestellmenge: 17
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IKB40N65EF5ATMA1 IKB40N65EF5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD7954CB00F820&compId=IKB40N65EF5.pdf?ci_sign=f62162fca50ae64d7b1994688492f8e798f89f56 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 56ns
Turn-off time: 212ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKB40N65EH5ATMA1 IKB40N65EH5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD7FC31BBF5820&compId=IKB40N65EH5.pdf?ci_sign=ae23714c68ac95b418155dee932388aa2c4eed0f Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 34ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB40N65ES5ATMA1 IKB40N65ES5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD86BB011BB820&compId=IKB40N65ES5.pdf?ci_sign=772e35322d60b6684f9f2ae2275e07e31bb27b1c Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP40N65F5XKSA1 IKP40N65F5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4A7B8FBEA51CC&compId=IKP40N65F5-DTE.pdf?ci_sign=445701938249e516efd9fc137d2072b8601a1d3d Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 255W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP40N65H5XKSA1 IKP40N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4A9938764B1CC&compId=IKP40N65H5-DTE.pdf?ci_sign=aaa5629aac0ce8bc2e59854c8255ed0825945672 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 255W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65ES5XKSA1 IKW40N65ES5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF28E61AB05D820&compId=IKW40N65ES5.pdf?ci_sign=4adce4e3a11ecfbeb9d95624cdd00aee97ed9ad9 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKW40N65F5FKSA1 IKW40N65F5FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4BFFA429191CC&compId=IKW40N65F5-DTE.pdf?ci_sign=9ce24fa87b9c244017aa425e6305975292440533 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.52 EUR
15+4.76 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65H5FKSA1 IKW40N65H5FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4C1883E46B1CC&compId=IKW40N65H5-DTE.pdf?ci_sign=07db0e40e0e5e1d8beab9abb10b4f936980c3b7b Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.41 EUR
23+3.25 EUR
24+3.07 EUR
60+2.95 EUR
Mindestbestellmenge: 14
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IKW40N65WR5XKSA1 IKW40N65WR5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5DC9EFEF4D3D7&compId=IKW40N65WR5.pdf?ci_sign=b3130abe7ac391a15c16949e20e522279c4b214b Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 448ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.69 EUR
26+2.79 EUR
28+2.65 EUR
Mindestbestellmenge: 20
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BSP613PH6327XTSA1 BSP613PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA921C2619F071CC&compId=BSP613PH6327XTSA1-dte.pdf?ci_sign=723408d9febe3aa5b901341db3481f207e9054ff Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
On-state resistance: 0.13Ω
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
auf Bestellung 998 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.74 EUR
96+0.75 EUR
Mindestbestellmenge: 41
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SN7002WH6327XTSA1 SN7002WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A85484C47E310B&compId=SN7002WH6327XTSA1.pdf?ci_sign=99f37472360a87eec8acb72bf5b0b8d7370dfbd3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2277 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
455+0.16 EUR
650+0.11 EUR
759+0.094 EUR
1049+0.068 EUR
1109+0.064 EUR
1153+0.062 EUR
Mindestbestellmenge: 313
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IR2125PBF IR2125PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD343CF1A6F5005056AB5A8F&compId=ir2125.pdf?ci_sign=fc623d6f605dc7bc7e85d06d16abb2dbd919b7f4 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 201 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.18 EUR
20+3.75 EUR
27+2.69 EUR
29+2.55 EUR
Mindestbestellmenge: 18
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IR2125SPBF IR2125SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD87EC7AFA215EA&compId=IR2125SPBF.pdf?ci_sign=b60eafeb4583121eca344b2f0d5705418b1dc179 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO16; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO16
Output current: -2...1A
Power: 1.25W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 1420 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.12 EUR
19+3.8 EUR
20+3.65 EUR
45+3.52 EUR
Mindestbestellmenge: 18
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BAS21E6327HTSA1 BAS21E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7F2039728A469&compId=BAS2103WE6327HTSA1.pdf?ci_sign=c9c0fe8d828947d7f45944e66d5a14dbf6d975f0 Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOT23; 350mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.35W
auf Bestellung 2871 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
447+0.16 EUR
527+0.14 EUR
652+0.11 EUR
763+0.094 EUR
890+0.08 EUR
1348+0.053 EUR
1425+0.05 EUR
Mindestbestellmenge: 313
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IPT015N10N5ATMA1 IPT015N10N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBAD7554B3411C&compId=IPT015N10N5-DTE.pdf?ci_sign=81070ebcf3bdd89d929519f2630c51174d0da1da Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 243A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 243A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP4310ZPBF IRFP4310ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACB2FF1A6F5005056AB5A8F&compId=irfp4310zpbf.pdf?ci_sign=1ae062df49e0450216242d86612a06505c4d23ec Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 134A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 134A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.23 EUR
26+2.77 EUR
28+2.62 EUR
Mindestbestellmenge: 17
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AUIRG4PH50S AUIRG4PH50S INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDB96F76D7618FA40C7&compId=auirg4ph50s.pdf?ci_sign=06bd4ffeec9e52c7556a5dcb27d76d7567cc3019 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 81A
Power dissipation: 217W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 227nC
Gate-emitter voltage: ±20V
Pulsed collector current: 99A
Produkt ist nicht verfügbar
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IHW40N120R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCA5EF2915F820&compId=IHW40N120R5.pdf?ci_sign=ff87a8c36a7c399a49fec60936b41c23e7a4c9aa
IHW40N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.53 EUR
16+4.75 EUR
21+3.55 EUR
22+3.35 EUR
30+3.22 EUR
Mindestbestellmenge: 13
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IKQ40N120CH3XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AFF7BE8F13C749&compId=IKQ40N120CH3.pdf?ci_sign=c8ed0c89fcc600022b2a871e0b32fde7f3676f73
IKQ40N120CH3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 76ns
Produkt ist nicht verfügbar
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IKQ40N120CT2XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AFD6AC8EDA0749&compId=IKQ40N120CT2.pdf?ci_sign=8253bd2051f94bd3337d2fb92cd05a3b6edcd14b
IKQ40N120CT2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 2
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 75ns
Produkt ist nicht verfügbar
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IKW40N120CS6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE986B0A66D3DFBB8BF&compId=IKW40N120CS6.pdf?ci_sign=31fae688f4eaa08099e8297f1be2823d2dbebf7b
IKW40N120CS6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.42 EUR
16+4.46 EUR
Mindestbestellmenge: 9
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IKW40N120H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4B1227AD871CC&compId=IKW40N120H3-DTE.pdf?ci_sign=f8b339f1e873d397d5d01461d09440706297c41f
IKW40N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.18 EUR
12+5.99 EUR
Mindestbestellmenge: 8
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IKW40N120T2FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD0E2F7E6320259&compId=IKW40N120T2.pdf?ci_sign=6bbbb8c74de3acef3716a77652baf5b260d1e5ac
IKW40N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 165A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.61 EUR
10+7.31 EUR
11+6.92 EUR
Mindestbestellmenge: 7
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IKY40N120CH3XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF3053B408E7820&compId=IKY40N120CH3.pdf?ci_sign=6f1d0b3f6ef77831abed12e2ffc7daa6f0f4c068
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Turn-off time: 306ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 59ns
Produkt ist nicht verfügbar
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IKY40N120CS6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF30BD6FCDAB820&compId=IKY40N120CS6.pdf?ci_sign=341ed47cf8e6482e67d81b7d878f560b2cace0b7
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Turn-off time: 342ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Produkt ist nicht verfügbar
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IPD090N03LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F33308FC6DE11C&compId=IPD090N03LG-DTE.pdf?ci_sign=9a4be819311a50a24b55811cccea1abba829cef9
IPD090N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2162 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
94+0.76 EUR
101+0.71 EUR
146+0.49 EUR
154+0.46 EUR
Mindestbestellmenge: 80
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IRL2203NSTRLPBF pVersion=0046&contRep=ZT&docId=E22272FD5B2EC9F1A303005056AB0C4F&compId=irl2203nspbf.pdf?ci_sign=338ad334b3f34a2957cf0ae5f23cffd55bfac9a8
IRL2203NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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PVT422PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D6CE9F1E81EC&compId=pvt422.pdf?ci_sign=3f2ba5943339d5ad4b75c4067aaf5ceb997c203e
PVT422PBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Switched voltage: 0...400V AC; 0...400V DC
Release time: 0.5ms
Manufacturer series: PVT422PbF
Control current: 2...25mA
Contacts configuration: DPST-NO
Max. operating current: 350mA
On-state resistance: 35Ω
Operate time: 2ms
Relay variant: MOSFET
Produkt ist nicht verfügbar
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PVT422SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D6CE9F1E81EC&compId=pvt422.pdf?ci_sign=3f2ba5943339d5ad4b75c4067aaf5ceb997c203e
PVT422SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 2ms
Release time: 0.5ms
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.9 EUR
8+9.27 EUR
9+8.75 EUR
Mindestbestellmenge: 7
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IGB20N65S5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB6C96BEB6D820&compId=IGB20N65S5.pdf?ci_sign=a4d8b063edbd433beb9ed958c8c2ba441c0328b3
IGB20N65S5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 28A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 28A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Turn-on time: 27ns
Gate charge: 48nC
Turn-off time: 137ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHW20N65R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC6BCE91BE1820&compId=IHW20N65R5.pdf?ci_sign=b44b2ed99f625095237ebaf7c9ffdee8198ae140
IHW20N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 97nC
Turn-off time: 257ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB20N65EH5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD5B574119B820&compId=IKB20N65EH5.pdf?ci_sign=84117916d2af3cf46356ecf8de4185ed193d681c
IKB20N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Gate charge: 48nC
Turn-off time: 183ns
auf Bestellung 919 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
25+2.9 EUR
26+2.76 EUR
27+2.75 EUR
100+2.65 EUR
Mindestbestellmenge: 18
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SPD50N03S207GBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4D5A62F654D811C&compId=SPD50N03S207G-DTE.pdf?ci_sign=068d79be9e9d324ac6f1de7a5a630c5f9ecd67a2
SPD50N03S207GBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1418 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
106+0.67 EUR
112+0.64 EUR
115+0.62 EUR
500+0.6 EUR
Mindestbestellmenge: 103
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BSC050N03LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2FCC41651611C&compId=BSC050N03LSG-DTE.pdf?ci_sign=55fc8546e1bdca0ab93af1429ad045914edb6305
BSC050N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC050N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2FE70931A411C&compId=BSC050N03MSG-DTE.pdf?ci_sign=30504bf576f6632aed8312b78da20e1992fd0544
BSC050N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ050N03LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E0EB1F2E8A11C&compId=BSZ050N03LSG-DTE.pdf?ci_sign=9f16a7c062b56041a9272d38bed4641b6e009ba8
BSZ050N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ050N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E131A2C06811C&compId=BSZ050N03MSG-DTE.pdf?ci_sign=2cf09708082e3be57659c3c3e831485885c116b9
BSZ050N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD050N03LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F31FCD9EF4C11C&compId=IPD050N03LG-DTE.pdf?ci_sign=d06db5c93bba5c2107dc7137cf96d635f8618866
IPD050N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 1646 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
79+0.91 EUR
115+0.62 EUR
122+0.59 EUR
Mindestbestellmenge: 73
Im Einkaufswagen  Stück im Wert von  UAH
SPA11N80C3 description
SPA11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPP11N80C3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B2B1E5D4C00111BF&compId=SPP11N80C3-dte.pdf?ci_sign=b26c2386ea50a5506f83eacecebe4bf1a2b7bb44
SPP11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.8 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
SPW11N80C3 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B3FF4C2BAF7A71BF&compId=SPW11N80C3-DTE.pdf?ci_sign=a5731e027b48697bfb5b7b556dd38587c18e85a8
SPW11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7101TRPBF pVersion=0046&contRep=ZT&docId=E21F72EDED7238F1A303005056AB0C4F&compId=irf7101pbf.pdf?ci_sign=aaac22e0b6c73d3d5db65aef3b433a69d403b0bc
IRF7101TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7103TRPBF description pVersion=0046&contRep=ZT&docId=E21F730DD100BCF1A303005056AB0C4F&compId=irf7103pbf.pdf?ci_sign=2b12eb75b5f6dce55c65084304d884f8b12d91e4
IRF7103TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Technology: HEXFET®
auf Bestellung 1684 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.27 EUR
70+1.04 EUR
120+0.6 EUR
274+0.26 EUR
290+0.25 EUR
Mindestbestellmenge: 57
Im Einkaufswagen  Stück im Wert von  UAH
IRF7104TRPBF description pVersion=0046&contRep=ZT&docId=E21F73473BB245F1A303005056AB0C4F&compId=irf7104pbf.pdf?ci_sign=e5ad76f1ac31c77ea305a7fd6f10a5c85b412e65
IRF7104TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7105TRPBF description pVersion=0046&contRep=ZT&docId=E21F73624E9CF8F1A303005056AB0C4F&compId=irf7105pbf.pdf?ci_sign=dd73476fc951e3f65fd1e97ec32dcb771610ef64
IRF7105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3978 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
167+0.43 EUR
193+0.37 EUR
215+0.33 EUR
345+0.21 EUR
365+0.2 EUR
Mindestbestellmenge: 120
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AUIRF7103QTR pVersion=0046&contRep=ZT&docId=E21F732C397812F1A303005056AB0C4F&compId=irf7103qpbf.pdf?ci_sign=6f2d86b4e3f859b06ae14d68aec215fa828791c2
AUIRF7103QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 2.4W
Gate-source voltage: ±20V
Technology: HEXFET®
Gate charge: 10nC
On-state resistance: 0.2Ω
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9310TRPBF pVersion=0046&contRep=ZT&docId=E221AF185413D2F1A303005056AB0C4F&compId=irf9310pbf.pdf?ci_sign=e3a7f7b06c7da9c24a173beec3710b94b88c4fe4
IRF9310TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3840 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
48+1.5 EUR
121+0.59 EUR
128+0.56 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ34NPBF pVersion=0046&contRep=ZT&docId=E1C04E7D5055B0F1A6F5005056AB5A8F&compId=irfz34n.pdf?ci_sign=686bda4beadb73c469501e8a6160e62db2558a32
IRFZ34NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 26A; 56W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 26A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 22.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ34NSTRLPBF pVersion=0046&contRep=ZT&docId=E221CA5807D86BF1A303005056AB0C4F&compId=irfz34nspbf.pdf?ci_sign=2fff9063d2b86069a4b91f953d0d75984c82566e
IRFZ34NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 29A; 68W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 29A
Power dissipation: 68W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP055N03LGXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAC943DE51411C&compId=IPP055N03LG-DTE.pdf?ci_sign=4c046460a84c3cb82bd98e0e42db4e2dee8ace2f
IPP055N03LGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO220-3-1
Mounting: THT
Case: PG-TO220-3-1
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.46 EUR
Mindestbestellmenge: 29
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BTS721L1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD63E1D1A0DB5EA&compId=BTS721L1.pdf?ci_sign=dc89e9f4aa46a4b01ce52b4c4547a9f1890db8d6
BTS721L1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷6.3A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.9...6.3A
Mounting: SMD
Number of channels: 4
Case: DSO20
Supply voltage: 5...34V DC
On-state resistance: 25mΩ
Technology: Classic PROFET
Power dissipation: 3.7W
Kind of output: N-Channel
auf Bestellung 343 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.66 EUR
12+6.02 EUR
25+5.81 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPD060N03LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F322FAA4E5C11C&compId=IPD060N03LG-DTE.pdf?ci_sign=7dd05ce845a4f67fba2b0dcdc3fd5e00f47869b8
IPD060N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 56W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2479 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
105+0.69 EUR
114+0.63 EUR
122+0.59 EUR
128+0.56 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4568PBF description pVersion=0046&contRep=ZT&docId=E1C04E6B43C084F1A6F5005056AB5A8F&compId=irfp4568pbf.pdf?ci_sign=cd4a3c3005dfa3acc21d8e71cc6c8608fe85a120
IRFP4568PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 5.9mΩ
Gate-source voltage: ±30V
Gate charge: 151nC
Technology: HEXFET®
Power dissipation: 517W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024NTRPBF pVersion=0046&contRep=ZT&docId=E221BD84F5CA48F1A303005056AB0C4F&compId=irfl024npbf.pdf?ci_sign=82149718abf7d65abc0cc3f966ed8e67d81b09e0
IRFL024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGP40N65F5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B357CE50A06FA8&compId=IGP40N65F5XKSA1-DTE.pdf?ci_sign=5364802f19d02231e857b5a684b7d43fa931e4d8
IGP40N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 125W; TO220-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 476 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.62 EUR
21+3.49 EUR
24+3.03 EUR
25+2.86 EUR
26+2.79 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IGP40N65H5XKSA1 DS_IGP_IGW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af52fd5b600b6
IGP40N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; H5
Case: TO220-3
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 74A
Power dissipation: 250W
Collector-emitter voltage: 650V
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.72 EUR
41+1.77 EUR
43+1.67 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IGW40N65F5FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B357CE50A06FA8&compId=IGP40N65F5XKSA1-DTE.pdf?ci_sign=5364802f19d02231e857b5a684b7d43fa931e4d8
IGW40N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.02 EUR
21+3.55 EUR
26+2.77 EUR
28+2.62 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IGW40N65H5FKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDBFF18CC50EC600D5&compId=IGW40N65H5FKSA1.pdf?ci_sign=ae5af7233e9af26b6ec8388b5d40301b249f336e
IGW40N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.72 EUR
23+3.25 EUR
24+3.07 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N65R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCF82A829F1820&compId=IHW40N65R5.pdf?ci_sign=f2b3df89ecc5884a555765950a699d043f13b658
IHW40N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 152W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 152W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 273ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N65R6XKSA1 Infineon-IHW40N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e19dad7275
IHW40N65R6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.29 EUR
26+2.82 EUR
27+2.66 EUR
30+2.63 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IKB40N65EF5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD7954CB00F820&compId=IKB40N65EF5.pdf?ci_sign=f62162fca50ae64d7b1994688492f8e798f89f56
IKB40N65EF5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 56ns
Turn-off time: 212ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKB40N65EH5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD7FC31BBF5820&compId=IKB40N65EH5.pdf?ci_sign=ae23714c68ac95b418155dee932388aa2c4eed0f
IKB40N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 34ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKB40N65ES5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD86BB011BB820&compId=IKB40N65ES5.pdf?ci_sign=772e35322d60b6684f9f2ae2275e07e31bb27b1c
IKB40N65ES5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP40N65F5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4A7B8FBEA51CC&compId=IKP40N65F5-DTE.pdf?ci_sign=445701938249e516efd9fc137d2072b8601a1d3d
IKP40N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 255W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP40N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4A9938764B1CC&compId=IKP40N65H5-DTE.pdf?ci_sign=aaa5629aac0ce8bc2e59854c8255ed0825945672
IKP40N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 255W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65ES5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF28E61AB05D820&compId=IKW40N65ES5.pdf?ci_sign=4adce4e3a11ecfbeb9d95624cdd00aee97ed9ad9
IKW40N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65F5FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4BFFA429191CC&compId=IKW40N65F5-DTE.pdf?ci_sign=9ce24fa87b9c244017aa425e6305975292440533
IKW40N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.52 EUR
15+4.76 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65H5FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4C1883E46B1CC&compId=IKW40N65H5-DTE.pdf?ci_sign=07db0e40e0e5e1d8beab9abb10b4f936980c3b7b
IKW40N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.41 EUR
23+3.25 EUR
24+3.07 EUR
60+2.95 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65WR5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5DC9EFEF4D3D7&compId=IKW40N65WR5.pdf?ci_sign=b3130abe7ac391a15c16949e20e522279c4b214b
IKW40N65WR5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 448ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.69 EUR
26+2.79 EUR
28+2.65 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
BSP613PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA921C2619F071CC&compId=BSP613PH6327XTSA1-dte.pdf?ci_sign=723408d9febe3aa5b901341db3481f207e9054ff
BSP613PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
On-state resistance: 0.13Ω
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
auf Bestellung 998 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
96+0.75 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
SN7002WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A85484C47E310B&compId=SN7002WH6327XTSA1.pdf?ci_sign=99f37472360a87eec8acb72bf5b0b8d7370dfbd3
SN7002WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2277 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
455+0.16 EUR
650+0.11 EUR
759+0.094 EUR
1049+0.068 EUR
1109+0.064 EUR
1153+0.062 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
IR2125PBF pVersion=0046&contRep=ZT&docId=E1C04E2EFD343CF1A6F5005056AB5A8F&compId=ir2125.pdf?ci_sign=fc623d6f605dc7bc7e85d06d16abb2dbd919b7f4
IR2125PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 201 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.18 EUR
20+3.75 EUR
27+2.69 EUR
29+2.55 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IR2125SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD87EC7AFA215EA&compId=IR2125SPBF.pdf?ci_sign=b60eafeb4583121eca344b2f0d5705418b1dc179
IR2125SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO16; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO16
Output current: -2...1A
Power: 1.25W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 1420 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.12 EUR
19+3.8 EUR
20+3.65 EUR
45+3.52 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
BAS21E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7F2039728A469&compId=BAS2103WE6327HTSA1.pdf?ci_sign=c9c0fe8d828947d7f45944e66d5a14dbf6d975f0
BAS21E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOT23; 350mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.35W
auf Bestellung 2871 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
447+0.16 EUR
527+0.14 EUR
652+0.11 EUR
763+0.094 EUR
890+0.08 EUR
1348+0.053 EUR
1425+0.05 EUR
Mindestbestellmenge: 313
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IPT015N10N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBAD7554B3411C&compId=IPT015N10N5-DTE.pdf?ci_sign=81070ebcf3bdd89d929519f2630c51174d0da1da
IPT015N10N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 243A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 243A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP4310ZPBF pVersion=0046&contRep=ZT&docId=E1C04E653ACB2FF1A6F5005056AB5A8F&compId=irfp4310zpbf.pdf?ci_sign=1ae062df49e0450216242d86612a06505c4d23ec
IRFP4310ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 134A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 134A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.23 EUR
26+2.77 EUR
28+2.62 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
AUIRG4PH50S pVersion=0046&contRep=ZT&docId=005056AB90B41EDB96F76D7618FA40C7&compId=auirg4ph50s.pdf?ci_sign=06bd4ffeec9e52c7556a5dcb27d76d7567cc3019
AUIRG4PH50S
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 81A
Power dissipation: 217W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 227nC
Gate-emitter voltage: ±20V
Pulsed collector current: 99A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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