Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149581) > Seite 2489 nach 2494
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CY15B201QN-50SXET | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 1.8÷3.6VDC; 50MHz; SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 1Mb FRAM Interface: SPI Memory organisation: 128kx8bit Supply voltage: 1.8...3.6V DC Clock frequency: 50MHz Case: SOIC8 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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CY15B256J-SXA | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: I2C Memory organisation: 32kx8bit Supply voltage: 2...3.6V DC Clock frequency: 3.4MHz Case: SOIC8 Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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CY15B256J-SXAT | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: I2C Memory organisation: 32kx8bit Supply voltage: 2...3.6V DC Clock frequency: 3.4MHz Case: SOIC8 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
CY15B256J-SXE | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: I2C Memory organisation: 32kx8bit Supply voltage: 2...3.6V DC Clock frequency: 3.4MHz Case: SOIC8 Mounting: SMD Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
CY15B256J-SXET | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: I2C Memory organisation: 32kx8bit Supply voltage: 2...3.6V DC Clock frequency: 3.4MHz Case: SOIC8 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
CY15B256Q-SXA | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: SPI Memory organisation: 32kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: SOIC8 Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
CY15B256Q-SXAT | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: SPI Memory organisation: 32kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: SOIC8 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
CY15B256Q-SXE | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2.7÷3.6VDC; 33MHz; SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: SPI Memory organisation: 32kx8bit Supply voltage: 2.7...3.6V DC Clock frequency: 33MHz Case: SOIC8 Mounting: SMD Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
CY15B256Q-SXET | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2.7÷3.6VDC; 33MHz; SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: SPI Memory organisation: 32kx8bit Supply voltage: 2.7...3.6V DC Clock frequency: 33MHz Case: SOIC8 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
TLE9254LCXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuits Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-TSON-14; -40÷150°C Type of integrated circuit: interface Operating temperature: -40...150°C Case: PG-TSON-14 DC supply current: 48mA Supply voltage: 4.5...5.5V DC Mounting: SMD Interface: CAN-FD Integrated circuit features: WUP Kind of package: reel; tape Number of receivers: 2 Number of transmitters: 2 Kind of integrated circuit: transceiver |
Produkt ist nicht verfügbar |
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TLE9254SKXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-14; -40÷150°C; 48mA Type of integrated circuit: interface Operating temperature: -40...150°C Case: PG-DSO-14 DC supply current: 48mA Supply voltage: 4.5...5.5V DC Mounting: SMD Interface: CAN-FD Integrated circuit features: WUP Kind of package: reel; tape Number of receivers: 2 Number of transmitters: 2 Kind of integrated circuit: transceiver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
TLE9254VLCXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-TSON-14; 48mA Type of integrated circuit: interface Operating temperature: -40...150°C Case: PG-TSON-14 DC supply current: 48mA Supply voltage: 3...5.5V DC; 4.5...5.5V DC Mounting: SMD Interface: CAN-FD Integrated circuit features: WUP Kind of package: reel; tape Number of receivers: 2 Number of transmitters: 2 Kind of integrated circuit: transceiver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
TLE9254VSKXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-14; 48mA Type of integrated circuit: interface Operating temperature: -40...150°C Case: PG-DSO-14 DC supply current: 48mA Supply voltage: 3...5.5V DC; 4.5...5.5V DC Mounting: SMD Interface: CAN-FD Integrated circuit features: WUP Kind of package: reel; tape Number of receivers: 2 Number of transmitters: 2 Kind of integrated circuit: transceiver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IRF7457TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8 Case: SO8 Drain-source voltage: 20V Drain current: 16A Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhancement Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BCV61BE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.3W Case: SOT143 Mounting: SMD Frequency: 250MHz |
auf Bestellung 1910 Stücke: Lieferzeit 14-21 Tag (e) |
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IPC100N04S5L-1R5 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 115W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 95nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IPC100N04S5-1R9 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Drain-source voltage: 40V Drain current: 100A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Gate charge: 65nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IPC100N04S5-2R8 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Drain-source voltage: 40V Drain current: 100A On-state resistance: 2.8mΩ Type of transistor: N-MOSFET Power dissipation: 75W Polarisation: unipolar Gate charge: 45nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IPB100N04S303ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W Case: PG-TO263-3 Mounting: SMD Drain-source voltage: 40V Drain current: 100A On-state resistance: 2.5mΩ Type of transistor: N-MOSFET Power dissipation: 214W Polarisation: unipolar Gate charge: 110nC Technology: OptiMOS™ T Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IPC100N04S5L-1R1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Drain-source voltage: 40V Drain current: 100A On-state resistance: 1.1mΩ Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Gate charge: 0.14µC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±16V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IPC100N04S5-1R2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Drain-source voltage: 40V Drain current: 100A On-state resistance: 1.2mΩ Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Gate charge: 131nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IPC100N04S5-1R7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Drain-source voltage: 40V Drain current: 100A On-state resistance: 1.7mΩ Type of transistor: N-MOSFET Power dissipation: 115W Polarisation: unipolar Gate charge: 83nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IPC100N04S5L-1R9 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Drain-source voltage: 40V Drain current: 100A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Gate charge: 81nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±16V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IPC100N04S5L-2R6 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Drain-source voltage: 40V Drain current: 100A On-state resistance: 2.6mΩ Type of transistor: N-MOSFET Power dissipation: 75W Polarisation: unipolar Gate charge: 55nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±16V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
IAUC100N04S6L014ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A Case: PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 100A On-state resistance: 2mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Gate charge: 65nC Technology: OptiMOS™ 6 Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 400A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
IAUC100N04S6L020ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A Case: PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 100A On-state resistance: 2.7mΩ Type of transistor: N-MOSFET Power dissipation: 75W Polarisation: unipolar Gate charge: 46nC Technology: OptiMOS™ 6 Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 400A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
IAUC100N04S6L025ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 83A; Idm: 400A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 83A Pulsed drain current: 400A Power dissipation: 62W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
IAUC100N04S6N022ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 96A Pulsed drain current: 400A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
IAUC100N04S6N028ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 77A; Idm: 400A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 77A Pulsed drain current: 400A Power dissipation: 62W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
IPB100N04S4H2ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD100N04S402ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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1EDN8511BXUSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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BSO220N03MDGXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8 Mounting: SMD On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 1.56W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 7.7A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BSC050N04LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 71A Power dissipation: 57W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
BSC0502NSIATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Case: PG-TDSON-8 Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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BSC050NE2LSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 28W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 39A Power dissipation: 28W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
BSC0500NSIATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC0502NSIATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC060N10NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 125W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 90A Power dissipation: 125W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BSC060P03NS3EGATMA | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 83W; PG-TDSON-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P3 Polarisation: unipolar Drain-source voltage: -30V Drain current: -100A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±25V On-state resistance: 6mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BSC061N08NS5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 74W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 82A Power dissipation: 74W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.1mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BSC066N06NSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 64A Power dissipation: 46W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BSC067N06LS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BSC070N10NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8 Type of transistor: N-MOSFET Case: PG-TDSON-8 Drain-source voltage: 100V Drain current: 90A On-state resistance: 7mΩ Mounting: SMD Power dissipation: 114W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BSC070N10NS5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8 Type of transistor: N-MOSFET Case: PG-TDSON-8 Drain-source voltage: 100V Drain current: 90A On-state resistance: 7mΩ Mounting: SMD Power dissipation: 114W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BSC076N06NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Case: PG-TDSON-8 Drain-source voltage: 60V Drain current: 50A On-state resistance: 7.6mΩ Mounting: SMD Power dissipation: 69W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BSC077N12NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 98A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Case: PG-TDSON-8 Drain-source voltage: 120V Drain current: 98A On-state resistance: 7.7mΩ Mounting: SMD Power dissipation: 139W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
BSC070N10LS5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC076N04NDATMA1 | INFINEON TECHNOLOGIES |
![]() Description: BSC076N04NDATMA1 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC079N10NSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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FS50R12KE3BPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor/transistor; Urmax: 1.2kV; Ic: 50A; AG-ECONO2B; Inverter Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Application: Inverter Power dissipation: 270W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoPACK™ 2 Type of semiconductor module: IGBT Case: AG-ECONO2B |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
ESD101B102ELE6327XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: TVS Type of diode: TVS |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSB012NE2LXIXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W Case: CanPAK™ M; MG-WDSON-2 Drain-source voltage: 25V Drain current: 170A On-state resistance: 1.2mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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BSP324H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 0.17A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 25Ω Mounting: SMD Kind of channel: enhancement Technology: SIPMOS™ |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP029N06NAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3 Type of transistor: N-MOSFET Case: PG-TO220-3 Drain-source voltage: 60V Drain current: 100A On-state resistance: 2.9mΩ Power dissipation: 136W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
IPP029N06NXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC016N06NSTATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA50R140CPXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 23A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: CoolMOS™ |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD50R500CEAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.8A Pulsed drain current: 24A Power dissipation: 57W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 18.7nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FF200R17KE4HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1.25kW Electrical mounting: screw Mechanical mounting: screw Topology: IGBT half-bridge Type of semiconductor module: IGBT Case: AG-62MM-1 |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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CY15B201QN-50SXET |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 1.8÷3.6VDC; 50MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 1.8...3.6V DC
Clock frequency: 50MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 1.8÷3.6VDC; 50MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 1.8...3.6V DC
Clock frequency: 50MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B256J-SXA |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B256J-SXAT |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B256J-SXE |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B256J-SXET |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B256Q-SXA |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B256Q-SXAT |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B256Q-SXE |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2.7÷3.6VDC; 33MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 33MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2.7÷3.6VDC; 33MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 33MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B256Q-SXET |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2.7÷3.6VDC; 33MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 33MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2.7÷3.6VDC; 33MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 33MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE9254LCXUMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-TSON-14; -40÷150°C
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-TSON-14
DC supply current: 48mA
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Interface: CAN-FD
Integrated circuit features: WUP
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-TSON-14; -40÷150°C
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-TSON-14
DC supply current: 48mA
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Interface: CAN-FD
Integrated circuit features: WUP
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE9254SKXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-14; -40÷150°C; 48mA
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-DSO-14
DC supply current: 48mA
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Interface: CAN-FD
Integrated circuit features: WUP
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-14; -40÷150°C; 48mA
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-DSO-14
DC supply current: 48mA
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Interface: CAN-FD
Integrated circuit features: WUP
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE9254VLCXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-TSON-14; 48mA
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-TSON-14
DC supply current: 48mA
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Mounting: SMD
Interface: CAN-FD
Integrated circuit features: WUP
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-TSON-14; 48mA
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-TSON-14
DC supply current: 48mA
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Mounting: SMD
Interface: CAN-FD
Integrated circuit features: WUP
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE9254VSKXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-14; 48mA
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-DSO-14
DC supply current: 48mA
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Mounting: SMD
Interface: CAN-FD
Integrated circuit features: WUP
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-14; 48mA
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-DSO-14
DC supply current: 48mA
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Mounting: SMD
Interface: CAN-FD
Integrated circuit features: WUP
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF7457TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Case: SO8
Drain-source voltage: 20V
Drain current: 16A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Case: SO8
Drain-source voltage: 20V
Drain current: 16A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCV61BE6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1910 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
311+ | 0.23 EUR |
376+ | 0.19 EUR |
589+ | 0.12 EUR |
IPC100N04S5L-1R5 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPC100N04S5-1R9 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Gate charge: 65nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Gate charge: 65nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPC100N04S5-2R8 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 75W
Polarisation: unipolar
Gate charge: 45nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 75W
Polarisation: unipolar
Gate charge: 45nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB100N04S303ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Case: PG-TO263-3
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Gate charge: 110nC
Technology: OptiMOS™ T
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Case: PG-TO263-3
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Gate charge: 110nC
Technology: OptiMOS™ T
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPC100N04S5L-1R1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 0.14µC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 0.14µC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPC100N04S5-1R2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 131nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 131nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPC100N04S5-1R7 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Gate charge: 83nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Gate charge: 83nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPC100N04S5L-1R9 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Gate charge: 81nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Gate charge: 81nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPC100N04S5L-2R6 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 75W
Polarisation: unipolar
Gate charge: 55nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 75W
Polarisation: unipolar
Gate charge: 55nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IAUC100N04S6L014ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Gate charge: 65nC
Technology: OptiMOS™ 6
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 400A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Gate charge: 65nC
Technology: OptiMOS™ 6
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 400A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IAUC100N04S6L020ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 75W
Polarisation: unipolar
Gate charge: 46nC
Technology: OptiMOS™ 6
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 400A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 75W
Polarisation: unipolar
Gate charge: 46nC
Technology: OptiMOS™ 6
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 400A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IAUC100N04S6L025ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 83A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Pulsed drain current: 400A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 83A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Pulsed drain current: 400A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IAUC100N04S6N022ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 96A
Pulsed drain current: 400A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 96A
Pulsed drain current: 400A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IAUC100N04S6N028ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 77A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Pulsed drain current: 400A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 77A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Pulsed drain current: 400A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB100N04S4H2ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 1.26 EUR |
IPD100N04S402ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.04 EUR |
1EDN8511BXUSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO220N03MDGXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 7.7A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 7.7A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC050N04LSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC0502NSIATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC050NE2LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC0500NSIATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.74 EUR |
BSC0502NSIATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.47 EUR |
BSC060N10NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC060P03NS3EGATMA |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 83W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 83W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC061N08NS5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 82A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 82A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC066N06NSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC067N06LS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC070N10NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 100V
Drain current: 90A
On-state resistance: 7mΩ
Mounting: SMD
Power dissipation: 114W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 100V
Drain current: 90A
On-state resistance: 7mΩ
Mounting: SMD
Power dissipation: 114W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC070N10NS5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 100V
Drain current: 90A
On-state resistance: 7mΩ
Mounting: SMD
Power dissipation: 114W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 100V
Drain current: 90A
On-state resistance: 7mΩ
Mounting: SMD
Power dissipation: 114W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC076N06NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 7.6mΩ
Mounting: SMD
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 7.6mΩ
Mounting: SMD
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC077N12NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 98A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 120V
Drain current: 98A
On-state resistance: 7.7mΩ
Mounting: SMD
Power dissipation: 139W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 98A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 120V
Drain current: 98A
On-state resistance: 7.7mΩ
Mounting: SMD
Power dissipation: 139W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC070N10LS5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.96 EUR |
BSC076N04NDATMA1 |
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auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.78 EUR |
BSC079N10NSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 1.69 EUR |
FS50R12KE3BPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor/transistor; Urmax: 1.2kV; Ic: 50A; AG-ECONO2B; Inverter
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Application: Inverter
Power dissipation: 270W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 2
Type of semiconductor module: IGBT
Case: AG-ECONO2B
Category: IGBT modules
Description: Transistor/transistor; Urmax: 1.2kV; Ic: 50A; AG-ECONO2B; Inverter
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Application: Inverter
Power dissipation: 270W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 2
Type of semiconductor module: IGBT
Case: AG-ECONO2B
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ESD101B102ELE6327XTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15000+ | 0.13 EUR |
BSB012NE2LXIXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W
Case: CanPAK™ M; MG-WDSON-2
Drain-source voltage: 25V
Drain current: 170A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W
Case: CanPAK™ M; MG-WDSON-2
Drain-source voltage: 25V
Drain current: 170A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP324H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.17A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.17A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
67+ | 1.07 EUR |
94+ | 0.77 EUR |
154+ | 0.47 EUR |
163+ | 0.44 EUR |
IPP029N06NAKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 2.9mΩ
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 2.9mΩ
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP029N06NXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 1.42 EUR |
BSC016N06NSTATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 2.37 EUR |
IPA50R140CPXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.54 EUR |
13+ | 5.66 EUR |
14+ | 5.35 EUR |
IPD50R500CEAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Pulsed drain current: 24A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Pulsed drain current: 24A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FF200R17KE4HOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-62MM-1
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-62MM-1
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 239.81 EUR |