Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149582) > Seite 2486 nach 2494
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CY14V101Q3-SFXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial; tube Memory: 1Mb SRAM Operating temperature: -40...85°C Supply voltage: 1.65...1.95V DC; 3...3.6V DC Kind of interface: serial Frequency: 30MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 128kx8bit Kind of package: tube Case: SOIC16 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14V101QS-BK108XI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial Memory: 1Mb SRAM Operating temperature: -40...85°C Supply voltage: 1.71...2V DC; 2.7...3.6V DC Kind of interface: serial Frequency: 108MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 128kx8bit Kind of package: in-tray Case: FBGA24 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14V101QS-SE108XI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial; tube Memory: 1Mb SRAM Operating temperature: -40...85°C Supply voltage: 1.71...2V DC; 2.7...3.6V DC Kind of interface: serial Frequency: 108MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 128kx8bit Kind of package: tube Case: SOIC16 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14V101QS-BK108XIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial Memory: 1Mb SRAM Operating temperature: -40...85°C Supply voltage: 1.71...2V DC; 2.7...3.6V DC Kind of interface: serial Frequency: 108MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 128kx8bit Kind of package: reel; tape Case: FBGA24 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14V101QS-SE108XIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial Memory: 1Mb SRAM Operating temperature: -40...85°C Supply voltage: 1.71...2V DC; 2.7...3.6V DC Kind of interface: serial Frequency: 108MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 128kx8bit Kind of package: reel; tape Case: SOIC16 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BSZ018NE2LSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8 Drain-source voltage: 25V Drain current: 40A On-state resistance: 1.8mΩ Type of transistor: N-MOSFET Power dissipation: 69W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-TSDSON-8 |
auf Bestellung 4971 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9952TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8 Drain-source voltage: 30/-30V Drain current: 3.5/-2.3A On-state resistance: 0.1/0.25Ω Type of transistor: N/P-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±30V Mounting: SMD Case: SO8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSF030NE2LQXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 75A; 28W Mounting: SMD Drain-source voltage: 25V Drain current: 75A On-state resistance: 3mΩ Type of transistor: N-MOSFET Power dissipation: 28W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±25V Case: CanPAK™ SQ; MG-WDSON-2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRS2304STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 127500 Stücke: Lieferzeit 14-21 Tag (e) |
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IDK10G120C5XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 10A; 165W Semiconductor structure: single diode Max. off-state voltage: 1.2kV Case: PG-TO263-2 Max. forward impulse current: 84A Leakage current: 22µA Power dissipation: 165W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: SMD Max. forward voltage: 2V Load current: 10A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IDK10G65C5 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 10A; 89W Semiconductor structure: single diode Max. off-state voltage: 650V Case: PG-TO263-2 Max. forward impulse current: 71A Leakage current: 2µA Power dissipation: 89W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: SMD Max. forward voltage: 1.8V Load current: 10A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSC112N06LDATMA1 | INFINEON TECHNOLOGIES |
![]() Description: BSC112N06LDATMA1 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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FP50R06W2E3B11BOMA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Power dissipation: 175W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 2B Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Case: AG-EASY2B-2 Max. off-state voltage: 0.6kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FP25R12W1T7B11BPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 1B Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Case: AG-EASY1B-2 Max. off-state voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IFF600B12ME4PB11BPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 600A Pulsed collector current: 1.2kA Application: for UPS; Inverter; motors; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Technology: EconoDUAL™ 3 Topology: IGBT half-bridge; NTC thermistor Case: AG-ECONOD-6 Max. off-state voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IFF450B12ME4PB11BPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor/transistor; IGBT half-bridge,NTC thermistor; screw Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Application: for UPS; Inverter; motors; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Technology: EconoDUAL™ 3 Topology: IGBT half-bridge; NTC thermistor Type of semiconductor module: IGBT Case: AG-ECONOD-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FF900R12ME7PB11BPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT Type of module: IGBT |
auf Bestellung 162 Stücke: Lieferzeit 14-21 Tag (e) |
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FS35R12W1T4B11BOMA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT Type of module: IGBT |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC039N06NS | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFHS9301TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 2.1W; PQFN2X2 Type of transistor: P-MOSFET Power dissipation: 2.1W Polarisation: unipolar Case: PQFN2X2 Kind of package: reel Mounting: SMD Technology: HEXFET® Kind of channel: enhancement Drain-source voltage: -30V Drain current: -6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ISP752R | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.15Ω Supply voltage: 6...52V DC Technology: Industrial PROFET |
auf Bestellung 2704 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP752T | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Mounting: SMD On-state resistance: 0.15Ω Output voltage: 52V Output current: 1.3A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Technology: Classic PROFET Kind of integrated circuit: high-side Case: SO8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRLS3034TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 343A Power dissipation: 375W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
AUIRLS3034 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 243A Power dissipation: 375W Case: DPAK Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 108nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29GL512T11TFIV10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 110ns Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29GL512T11TFIV20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 110ns Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29GL512T11TFV010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 110ns Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29GL512T11TFV020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 110ns Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
T560N18TOFXPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA Max. off-state voltage: 1.8kV Load current: 559A Case: BG-T4814K0-1 Max. forward impulse current: 8kA Gate current: 200mA Kind of package: in-tray Mounting: Press-Pack Features of semiconductor devices: phase controlled thyristor (PCT) Max. load current: 809A Type of thyristor: hockey-puck |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TD160N18SOF | INFINEON TECHNOLOGIES |
![]() Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 160A Case: BG-PB34SB-1 Max. forward voltage: 1.82V Max. forward impulse current: 5.2kA Gate current: 145mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Max. load current: 160A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
T3160N18TOFVTXPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA Max. off-state voltage: 1.8kV Load current: 3.16kA Case: BG-T11126K-1 Max. forward impulse current: 63kA Gate current: 250mA Kind of package: in-tray Mounting: Press-Pack Features of semiconductor devices: phase controlled thyristor (PCT) Max. load current: 7kA Type of thyristor: hockey-puck |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TT160N18SOF | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; double series; 1.8kV; 160A; BG-PB34SB-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 160A Case: BG-PB34SB-1 Max. forward voltage: 1.82V Max. forward impulse current: 5.2kA Gate current: 145mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BAT6302VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SC79; SMD; 3V; 0.1A; 100mW Type of diode: Schottky rectifying Case: SC79 Mounting: SMD Max. off-state voltage: 3V Load current: 0.1A Semiconductor structure: single diode Power dissipation: 0.1W |
auf Bestellung 421 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR420UE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SC74 Output current: 150...200mA Number of channels: 1 Integrated circuit features: linear dimming Mounting: SMD Operating voltage: 1.4...40V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BCR420UE6433HTMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SC74 Output current: 150...200mA Number of channels: 1 Integrated circuit features: linear dimming Mounting: SMD Operating voltage: 1.4...40V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IPP50R250CPXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Power dissipation: 114W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 452 Stücke: Lieferzeit 14-21 Tag (e) |
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BUZ73A | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-JFET; unipolar; 200V; 5.8A; 40W; TO220 Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.8A Case: TO220 On-state resistance: 0.5Ω Mounting: THT Power: 40W |
Produkt ist nicht verfügbar |
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SIPC69SN60C3X2SA2 | INFINEON TECHNOLOGIES |
Category: Transistors - Unclassified Description: SIPC69SN60C3X2SA2 |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB530N15N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO263-3 Drain-source voltage: 150V Drain current: 21A On-state resistance: 53mΩ Type of transistor: N-MOSFET Power dissipation: 68W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-TO263-3 |
Produkt ist nicht verfügbar |
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TLE49643KXTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Sensor: Hall Type of sensor: Hall |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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ISP13DP06NMSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR2405TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 56A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFR2405TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 56A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRFR7440TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 125A Pulsed drain current: 760A Power dissipation: 140W Case: DPAK Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BCR146E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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DEMO SENSE2GOL | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: demonstration; Comp: BGT24LTR11; Software: included Type of development kit: demonstration Kit contents: documentation; prototype board; USB A - USB B micro cable Components: BGT24LTR11 Software: included |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
STT800N16P55XPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; opposing; 1.6kV; 800A; BG-PS55-1; Ufmax: 1.56V Case: BG-PS55-1 Max. off-state voltage: 1.6kV Max. forward voltage: 1.56V Load current: 800A Semiconductor structure: opposing Gate current: 200mA Max. forward impulse current: 5.4kA Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor |
Produkt ist nicht verfügbar |
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IRFR540ZTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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DD340N20SHPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA Case: BG-PB50SB-1 Mechanical mounting: screw Type of module: diode Semiconductor structure: double series Max. forward impulse current: 10kA Max. forward voltage: 1.31V Max. off-state voltage: 2kV Load current: 330A Electrical mounting: screw |
Produkt ist nicht verfügbar |
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IPW60R070CFD7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 156W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.129Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 67nC |
Produkt ist nicht verfügbar |
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IPW60R070P6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 53.5A Power dissipation: 391W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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AUIR3240STR | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.3A; Ch: 1; 4÷36VDC Type of integrated circuit: driver Kind of integrated circuit: high-side; MOSFET gate driver Case: SO8 Supply voltage: 4...36V DC Mounting: SMD Number of channels: 1 Kind of package: reel; tape Voltage class: 40V Output current: 0.3A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIR3242SXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.2A; Ch: 1; 3÷36VDC Type of integrated circuit: driver Kind of integrated circuit: high-side; MOSFET gate driver Case: SO8 Supply voltage: 3...36V DC Mounting: SMD Number of channels: 1 Voltage class: 40V Output current: 0.2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BCW66KFE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Frequency: 170MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BCW66KGE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R080P7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 129W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPW60R080P7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 129W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPB60R080P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; D2PAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 129W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPZA60R080P7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 129W Case: PG-TO247-4 Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPP60R120P7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 95W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
CY14V101Q3-SFXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.65...1.95V DC; 3...3.6V DC
Kind of interface: serial
Frequency: 30MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.65...1.95V DC; 3...3.6V DC
Kind of interface: serial
Frequency: 30MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14V101QS-BK108XI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: in-tray
Case: FBGA24
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: in-tray
Case: FBGA24
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14V101QS-SE108XI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14V101QS-BK108XIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: FBGA24
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: FBGA24
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14V101QS-SE108XIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC16
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSZ018NE2LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Drain-source voltage: 25V
Drain current: 40A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Drain-source voltage: 25V
Drain current: 40A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
auf Bestellung 4971 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
77+ | 0.93 EUR |
81+ | 0.89 EUR |
100+ | 0.86 EUR |
IRF9952TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Drain-source voltage: 30/-30V
Drain current: 3.5/-2.3A
On-state resistance: 0.1/0.25Ω
Type of transistor: N/P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: SMD
Case: SO8
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Drain-source voltage: 30/-30V
Drain current: 3.5/-2.3A
On-state resistance: 0.1/0.25Ω
Type of transistor: N/P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSF030NE2LQXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 75A; 28W
Mounting: SMD
Drain-source voltage: 25V
Drain current: 75A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: CanPAK™ SQ; MG-WDSON-2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 75A; 28W
Mounting: SMD
Drain-source voltage: 25V
Drain current: 75A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: CanPAK™ SQ; MG-WDSON-2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRS2304STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 127500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.41 EUR |
IDK10G120C5XTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 10A; 165W
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Case: PG-TO263-2
Max. forward impulse current: 84A
Leakage current: 22µA
Power dissipation: 165W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. forward voltage: 2V
Load current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 10A; 165W
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Case: PG-TO263-2
Max. forward impulse current: 84A
Leakage current: 22µA
Power dissipation: 165W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. forward voltage: 2V
Load current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IDK10G65C5 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 10A; 89W
Semiconductor structure: single diode
Max. off-state voltage: 650V
Case: PG-TO263-2
Max. forward impulse current: 71A
Leakage current: 2µA
Power dissipation: 89W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. forward voltage: 1.8V
Load current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 10A; 89W
Semiconductor structure: single diode
Max. off-state voltage: 650V
Case: PG-TO263-2
Max. forward impulse current: 71A
Leakage current: 2µA
Power dissipation: 89W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. forward voltage: 1.8V
Load current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC112N06LDATMA1 |
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auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.68 EUR |
FP50R06W2E3B11BOMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 2B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY2B-2
Max. off-state voltage: 0.6kV
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 2B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY2B-2
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FP25R12W1T7B11BPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-2
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-2
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IFF600B12ME4PB11BPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Case: AG-ECONOD-6
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Case: AG-ECONOD-6
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IFF450B12ME4PB11BPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge,NTC thermistor; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-6
Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge,NTC thermistor; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FF900R12ME7PB11BPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT
Type of module: IGBT
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 316.33 EUR |
FS35R12W1T4B11BOMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT
Type of module: IGBT
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
24+ | 44.84 EUR |
BSC039N06NS |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFHS9301TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 2.1W; PQFN2X2
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Case: PQFN2X2
Kind of package: reel
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -6A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 2.1W; PQFN2X2
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Case: PQFN2X2
Kind of package: reel
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -6A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ISP752R |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Industrial PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Industrial PROFET
auf Bestellung 2704 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.17 EUR |
37+ | 1.96 EUR |
39+ | 1.86 EUR |
40+ | 1.82 EUR |
41+ | 1.76 EUR |
250+ | 1.70 EUR |
500+ | 1.69 EUR |
BSP752T |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.15Ω
Output voltage: 52V
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Case: SO8
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.15Ω
Output voltage: 52V
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen
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IRLS3034TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen
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AUIRLS3034 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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S29GL512T11TFIV10 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL512T11TFIV20 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL512T11TFV010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL512T11TFV020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
T560N18TOFXPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA
Max. off-state voltage: 1.8kV
Load current: 559A
Case: BG-T4814K0-1
Max. forward impulse current: 8kA
Gate current: 200mA
Kind of package: in-tray
Mounting: Press-Pack
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 809A
Type of thyristor: hockey-puck
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA
Max. off-state voltage: 1.8kV
Load current: 559A
Case: BG-T4814K0-1
Max. forward impulse current: 8kA
Gate current: 200mA
Kind of package: in-tray
Mounting: Press-Pack
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 809A
Type of thyristor: hockey-puck
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TD160N18SOF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 160A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 160A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
T3160N18TOFVTXPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 3.16kA
Case: BG-T11126K-1
Max. forward impulse current: 63kA
Gate current: 250mA
Kind of package: in-tray
Mounting: Press-Pack
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 7kA
Type of thyristor: hockey-puck
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 3.16kA
Case: BG-T11126K-1
Max. forward impulse current: 63kA
Gate current: 250mA
Kind of package: in-tray
Mounting: Press-Pack
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 7kA
Type of thyristor: hockey-puck
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TT160N18SOF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 160A; BG-PB34SB-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 160A; BG-PB34SB-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAT6302VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 3V; 0.1A; 100mW
Type of diode: Schottky rectifying
Case: SC79
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.1W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 3V; 0.1A; 100mW
Type of diode: Schottky rectifying
Case: SC79
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.1W
auf Bestellung 421 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
131+ | 0.55 EUR |
166+ | 0.43 EUR |
233+ | 0.31 EUR |
271+ | 0.26 EUR |
421+ | 0.17 EUR |
BCR420UE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR420UE6433HTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP50R250CPXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 452 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.12 EUR |
27+ | 2.75 EUR |
30+ | 2.39 EUR |
32+ | 2.25 EUR |
BUZ73A |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 200V; 5.8A; 40W; TO220
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.8A
Case: TO220
On-state resistance: 0.5Ω
Mounting: THT
Power: 40W
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 200V; 5.8A; 40W; TO220
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.8A
Case: TO220
On-state resistance: 0.5Ω
Mounting: THT
Power: 40W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIPC69SN60C3X2SA2 |
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2000+ | 9.18 EUR |
IPB530N15N3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO263-3
Drain-source voltage: 150V
Drain current: 21A
On-state resistance: 53mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO263-3
Drain-source voltage: 150V
Drain current: 21A
On-state resistance: 53mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE49643KXTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.42 EUR |
ISP13DP06NMSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.29 EUR |
IRFR2405TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFR2405TRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFR7440TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 125A
Pulsed drain current: 760A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 125A
Pulsed drain current: 760A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR146E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.05 EUR |
DEMO SENSE2GOL |
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: demonstration; Comp: BGT24LTR11; Software: included
Type of development kit: demonstration
Kit contents: documentation; prototype board; USB A - USB B micro cable
Components: BGT24LTR11
Software: included
Category: Development kits - others
Description: Dev.kit: demonstration; Comp: BGT24LTR11; Software: included
Type of development kit: demonstration
Kit contents: documentation; prototype board; USB A - USB B micro cable
Components: BGT24LTR11
Software: included
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STT800N16P55XPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 800A; BG-PS55-1; Ufmax: 1.56V
Case: BG-PS55-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.56V
Load current: 800A
Semiconductor structure: opposing
Gate current: 200mA
Max. forward impulse current: 5.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 800A; BG-PS55-1; Ufmax: 1.56V
Case: BG-PS55-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.56V
Load current: 800A
Semiconductor structure: opposing
Gate current: 200mA
Max. forward impulse current: 5.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFR540ZTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2000+ | 0.65 EUR |
DD340N20SHPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Mechanical mounting: screw
Type of module: diode
Semiconductor structure: double series
Max. forward impulse current: 10kA
Max. forward voltage: 1.31V
Max. off-state voltage: 2kV
Load current: 330A
Electrical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Mechanical mounting: screw
Type of module: diode
Semiconductor structure: double series
Max. forward impulse current: 10kA
Max. forward voltage: 1.31V
Max. off-state voltage: 2kV
Load current: 330A
Electrical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPW60R070CFD7 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 67nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 67nC
Produkt ist nicht verfügbar
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IPW60R070P6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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AUIR3240STR |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.3A; Ch: 1; 4÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Supply voltage: 4...36V DC
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Voltage class: 40V
Output current: 0.3A
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.3A; Ch: 1; 4÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Supply voltage: 4...36V DC
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Voltage class: 40V
Output current: 0.3A
Produkt ist nicht verfügbar
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AUIR3242SXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.2A; Ch: 1; 3÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Supply voltage: 3...36V DC
Mounting: SMD
Number of channels: 1
Voltage class: 40V
Output current: 0.2A
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.2A; Ch: 1; 3÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Supply voltage: 3...36V DC
Mounting: SMD
Number of channels: 1
Voltage class: 40V
Output current: 0.2A
Produkt ist nicht verfügbar
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BCW66KFE6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Produkt ist nicht verfügbar
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BCW66KGE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.06 EUR |
IPP60R080P7 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPW60R080P7 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPB60R080P7ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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IPZA60R080P7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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IPP60R120P7 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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