Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (151650) > Seite 2486 nach 2528
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IR2153STRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Power: 625mW Mounting: SMD Operating temperature: -40...125°C Turn-off time: 40ns Turn-on time: 80ns Number of channels: 2 Supply voltage: 10...15.6V DC Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality Voltage class: 600V Case: SO8 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BTS740S2 | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: power switch; high-side; 5.5÷8.5A; Ch: 2; N-Channel; SMD; SO20-W Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 5.5...8.5A Mounting: SMD Number of channels: 2 Case: SO20-W Supply voltage: 5...34V DC On-state resistance: 15mΩ Technology: Classic PROFET Kind of output: N-Channel |
auf Bestellung 275 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLL014NTRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 2A Power dissipation: 2.1W Case: SOT223 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 1888 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLL024NTRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 4.4A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±16V On-state resistance: 65mΩ Mounting: SMD Gate charge: 10.4nC Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 385 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLL024ZTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 40A; 1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 4A Pulsed drain current: 40A Power dissipation: 1W Case: SOT223 Gate-source voltage: ±16V On-state resistance: 60mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel Kind of channel: enhancement |
auf Bestellung 2156 Stücke: Lieferzeit 14-21 Tag (e) |
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BC850BE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
auf Bestellung 8534 Stücke: Lieferzeit 14-21 Tag (e) |
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BC850CE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
auf Bestellung 348 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR9024NTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -11A Power dissipation: 38W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFR9024NTRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -11A Power dissipation: 38W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 3003 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRFR9024NTRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -55V Drain current: -8A Power dissipation: 38W Case: DPAK Mounting: SMD Kind of channel: enhancement Pulsed drain current: -44A Gate charge: 19nC On-state resistance: 0.175Ω Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IRL3705NPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 89A Power dissipation: 130W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level Gate-source voltage: ±16V Gate charge: 65.3nC On-state resistance: 10mΩ |
auf Bestellung 2726 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL3705NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 89A Power dissipation: 170W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRL3705ZSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 86A Power dissipation: 130W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRLB3034PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 343A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: THT Gate charge: 108nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLB3036PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 380W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 2.4mΩ Mounting: THT Gate charge: 91nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 171 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLB3813PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 260A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.95mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 771 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLB4030PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 370W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 4.3mΩ Mounting: THT Gate charge: 87nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 157 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLB4132PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: THT Kind of channel: enhancement Pulsed drain current: 620A |
auf Bestellung 304 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLB8314PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Kind of channel: enhancement Pulsed drain current: 664A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRLB8748PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 92A Power dissipation: 75W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 175 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7303TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.9A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRF7306TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 3335 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7309TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4/-3A Power dissipation: 1.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.05/0.1Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 3786 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF7309QTR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4/-3A Power dissipation: 1.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.05/0.1Ω Mounting: SMD Kind of channel: enhancement Gate charge: 16.7nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRLR2905ZTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 43A; Idm: 240A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 43A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level Pulsed drain current: 240A On-state resistance: 13.5mΩ Gate charge: 35nC Gate-source voltage: ±16V |
auf Bestellung 107 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRLR2905ZTRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK Polarisation: unipolar Case: DPAK Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Drain-source voltage: 55V Pulsed drain current: 240A Drain current: 42A Gate charge: 35nC On-state resistance: 13.5mΩ Power dissipation: 110W Gate-source voltage: ±16V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IRFR7540TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 110A Power dissipation: 140W Case: DPAK On-state resistance: 4.8mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IGW15N120H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 217W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: H3 |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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IHW15N120E1XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 62.2W; TO247-3 Type of transistor: IGBT Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Mounting: THT Case: TO247-3 Technology: TRENCHSTOP™ RC Kind of package: tube Turn-on time: 1940ns Gate charge: 90nC Turn-off time: 1450ns Collector current: 15A Gate-emitter voltage: ±20V Power dissipation: 62.2W Pulsed collector current: 45A Collector-emitter voltage: 1.2kV |
auf Bestellung 87 Stücke: Lieferzeit 14-21 Tag (e) |
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IHW15N120R3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 127W; TO247-3 Type of transistor: IGBT Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Mounting: THT Case: TO247-3 Technology: TRENCHSTOP™ RC Kind of package: tube Gate charge: 165nC Turn-off time: 346ns Collector current: 15A Gate-emitter voltage: ±20V Power dissipation: 127W Pulsed collector current: 45A Collector-emitter voltage: 1.2kV |
auf Bestellung 76 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW15N120BH6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3 Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO247-3 Technology: TRENCHSTOP™ 6 Kind of package: tube Gate charge: 92nC Collector current: 15A Gate-emitter voltage: ±20V Power dissipation: 100W Pulsed collector current: 60A Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IKW15N120T2FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3 Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO247-3 Technology: TRENCHSTOP™ 2 Kind of package: tube Turn-on time: 57ns Gate charge: 93nC Turn-off time: 457ns Collector current: 30A Gate-emitter voltage: ±20V Power dissipation: 235W Pulsed collector current: 60A Collector-emitter voltage: 1.2kV |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLML6344TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.3W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 37mΩ Mounting: SMD Gate charge: 6.8nC Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 6842 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLML0060TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; 1.25W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.7A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 10022 Stücke: Lieferzeit 14-21 Tag (e) |
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IGW75N65H5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 160nC Turn-on time: 61ns Turn-off time: 215ns Power dissipation: 198W Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 300A Collector-emitter voltage: 650V |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IGZ75N65H5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4 Type of transistor: IGBT Case: TO247-4 Mounting: THT Kind of package: tube Gate charge: 166nC Turn-on time: 37ns Turn-off time: 415ns Power dissipation: 197W Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 300A Collector-emitter voltage: 650V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IKW75N65EH5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 160nC Turn-on time: 61ns Turn-off time: 215ns Power dissipation: 198W Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 300A Collector-emitter voltage: 650V Manufacturer series: H5 Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IKW75N65ES5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 164nC Turn-on time: 86ns Turn-off time: 185ns Power dissipation: 197W Collector current: 80A Gate-emitter voltage: ±20V Pulsed collector current: 300A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IKZ75N65EL5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 100A; 268W; TO247-4 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Case: TO247-4 Mounting: THT Kind of package: tube Gate charge: 436nC Turn-on time: 143ns Turn-off time: 325ns Power dissipation: 268W Collector current: 100A Gate-emitter voltage: ±20V Pulsed collector current: 300A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IKZ75N65ES5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Case: TO247-4 Mounting: THT Kind of package: tube Gate charge: 164nC Turn-on time: 71ns Turn-off time: 427ns Power dissipation: 197W Collector current: 80A Gate-emitter voltage: ±20V Pulsed collector current: 300A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SPW35N60CFD | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 21.6A Power dissipation: 313W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.118Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRF540ZPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 36A Power dissipation: 92W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 26.5mΩ Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1206 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF540Z | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 36A Power dissipation: 92W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 26.5mΩ Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IGW40T120FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 270W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 105A Mounting: THT Kind of package: tube Technology: TRENCHSTOP™ |
auf Bestellung 126 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW40T120FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 270W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 105A Mounting: THT Gate charge: 203nC Kind of package: tube Turn-on time: 92ns Turn-off time: 700ns Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9530NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -14A Power dissipation: 3.8W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFL014NTRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 1.9A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 1.9A Power dissipation: 2.1W Case: SOT223 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IGB10N60TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 10A; 110W; D2PAK Type of transistor: IGBT Power dissipation: 110W Case: D2PAK Mounting: SMD Kind of package: tube Collector current: 10A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V |
auf Bestellung 1120 Stücke: Lieferzeit 14-21 Tag (e) |
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IGP10N60TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 18A; 110W; TO220-3 Type of transistor: IGBT Power dissipation: 110W Case: TO220-3 Mounting: THT Kind of package: tube Collector current: 18A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V |
auf Bestellung 163 Stücke: Lieferzeit 14-21 Tag (e) |
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IKA10N60TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 7.2A; 30W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 30W Case: TO220-3 Mounting: THT Kind of package: tube Gate charge: 67nC Turn-on time: 20ns Turn-off time: 250ns Collector current: 7.2A Gate-emitter voltage: ±20V Pulsed collector current: 30A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IKB10N60TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 110W Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 62nC Turn-on time: 20ns Turn-off time: 253ns Collector current: 18A Gate-emitter voltage: ±20V Pulsed collector current: 30A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 659 Stücke: Lieferzeit 14-21 Tag (e) |
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IKD10N60RATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 150W Case: DPAK Mounting: SMD Kind of package: reel; tape Gate charge: 64nC Turn-on time: 24ns Turn-off time: 331ns Collector current: 10A Gate-emitter voltage: ±20V Pulsed collector current: 30A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IKD10N60RFATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 150W Case: DPAK Mounting: SMD Kind of package: reel; tape Gate-emitter voltage: ±20V Pulsed collector current: 30A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 64nC Turn-on time: 27ns Turn-off time: 186ns Collector current: 10A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRLU024NPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 17A Power dissipation: 38W Case: IPAK Mounting: THT Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 707 Stücke: Lieferzeit 14-21 Tag (e) |
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PVG612 | INFINEON TECHNOLOGIES |
![]() ![]() Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612 Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 2.4A Switched voltage: -60...60V DC; 0...60V AC Relay variant: MOSFET Mounting: THT Operating temperature: -40...85°C Case: DIP6 Release time: 0.5ms Operate time: 2ms Control current: 5...25mA Manufacturer series: PVG612 On-state resistance: 0.15Ω |
auf Bestellung 259 Stücke: Lieferzeit 14-21 Tag (e) |
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PVG612ASPBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 4A; 0÷60VAC; -60÷60VDC Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 4A Manufacturer series: PVG612 Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Release time: 0.5ms On-state resistance: 0.1Ω Relay variant: MOSFET Switched voltage: -60...60V DC; 0...60V AC Operate time: 3.5ms Control current: 5...25mA |
auf Bestellung 183 Stücke: Lieferzeit 14-21 Tag (e) |
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PVG612S | INFINEON TECHNOLOGIES |
![]() ![]() Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612 Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 2.4A Manufacturer series: PVG612 Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Release time: 0.5ms On-state resistance: 0.15Ω Relay variant: MOSFET Switched voltage: -60...60V DC; 0...60V AC Operate time: 2ms Control current: 5...25mA |
auf Bestellung 477 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP4110PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 4.5mΩ Gate-source voltage: ±20V Gate charge: 150nC Technology: HEXFET® Power dissipation: 370W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BFR93AE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 90mA Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 6GHz |
auf Bestellung 13244 Stücke: Lieferzeit 14-21 Tag (e) |
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BFR93AWH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 90mA Power dissipation: 0.3W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 6GHz |
auf Bestellung 2960 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2153STRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Mounting: SMD
Operating temperature: -40...125°C
Turn-off time: 40ns
Turn-on time: 80ns
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Voltage class: 600V
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Mounting: SMD
Operating temperature: -40...125°C
Turn-off time: 40ns
Turn-on time: 80ns
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Voltage class: 600V
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTS740S2 | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5÷8.5A; Ch: 2; N-Channel; SMD; SO20-W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5...8.5A
Mounting: SMD
Number of channels: 2
Case: SO20-W
Supply voltage: 5...34V DC
On-state resistance: 15mΩ
Technology: Classic PROFET
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5÷8.5A; Ch: 2; N-Channel; SMD; SO20-W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5...8.5A
Mounting: SMD
Number of channels: 2
Case: SO20-W
Supply voltage: 5...34V DC
On-state resistance: 15mΩ
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.31 EUR |
13+ | 5.52 EUR |
IRLL014NTRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1888 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
93+ | 0.77 EUR |
148+ | 0.48 EUR |
332+ | 0.22 EUR |
350+ | 0.2 EUR |
IRLL024NTRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 385 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
95+ | 0.76 EUR |
105+ | 0.68 EUR |
122+ | 0.59 EUR |
211+ | 0.34 EUR |
224+ | 0.32 EUR |
IRLL024ZTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 40A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Pulsed drain current: 40A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 40A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Pulsed drain current: 40A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2156 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
73+ | 0.99 EUR |
104+ | 0.69 EUR |
133+ | 0.54 EUR |
141+ | 0.51 EUR |
143+ | 0.5 EUR |
BC850BE6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 8534 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
468+ | 0.15 EUR |
711+ | 0.1 EUR |
837+ | 0.086 EUR |
1211+ | 0.059 EUR |
1283+ | 0.056 EUR |
BC850CE6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
348+ | 0.2 EUR |
IRFR9024NTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFR9024NTRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3003 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
60+ | 1.2 EUR |
76+ | 0.95 EUR |
87+ | 0.83 EUR |
201+ | 0.36 EUR |
213+ | 0.34 EUR |
AUIRFR9024NTRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -44A
Gate charge: 19nC
On-state resistance: 0.175Ω
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -44A
Gate charge: 19nC
On-state resistance: 0.175Ω
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL3705NPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate-source voltage: ±16V
Gate charge: 65.3nC
On-state resistance: 10mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate-source voltage: ±16V
Gate charge: 65.3nC
On-state resistance: 10mΩ
auf Bestellung 2726 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
37+ | 1.96 EUR |
40+ | 1.82 EUR |
88+ | 0.82 EUR |
95+ | 0.76 EUR |
IRL3705NSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL3705ZSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 86A
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 86A
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLB3034PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.93 EUR |
26+ | 2.8 EUR |
28+ | 2.65 EUR |
IRLB3036PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.36 EUR |
21+ | 3.5 EUR |
23+ | 3.25 EUR |
50+ | 3.19 EUR |
IRLB3813PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 260A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.95mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 260A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.95mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 771 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.77 EUR |
48+ | 1.52 EUR |
54+ | 1.33 EUR |
IRLB4030PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.83 EUR |
29+ | 2.52 EUR |
31+ | 2.37 EUR |
50+ | 2.29 EUR |
IRLB4132PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 620A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 620A
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.62 EUR |
91+ | 0.79 EUR |
152+ | 0.47 EUR |
160+ | 0.45 EUR |
IRLB8314PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 664A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 664A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLB8748PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 175 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.49 EUR |
64+ | 1.12 EUR |
74+ | 0.98 EUR |
88+ | 0.82 EUR |
141+ | 0.51 EUR |
148+ | 0.48 EUR |
IRF7303TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF7306TRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 3335 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.17 EUR |
83+ | 0.87 EUR |
167+ | 0.43 EUR |
177+ | 0.4 EUR |
IRF7309TRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3786 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
68+ | 1.06 EUR |
85+ | 0.85 EUR |
146+ | 0.49 EUR |
154+ | 0.46 EUR |
1000+ | 0.45 EUR |
AUIRF7309QTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLR2905ZTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 43A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 43A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Pulsed drain current: 240A
On-state resistance: 13.5mΩ
Gate charge: 35nC
Gate-source voltage: ±16V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 43A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 43A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Pulsed drain current: 240A
On-state resistance: 13.5mΩ
Gate charge: 35nC
Gate-source voltage: ±16V
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
60+ | 1.2 EUR |
73+ | 0.99 EUR |
84+ | 0.86 EUR |
107+ | 0.67 EUR |
AUIRLR2905ZTRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Polarisation: unipolar
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 55V
Pulsed drain current: 240A
Drain current: 42A
Gate charge: 35nC
On-state resistance: 13.5mΩ
Power dissipation: 110W
Gate-source voltage: ±16V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Polarisation: unipolar
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 55V
Pulsed drain current: 240A
Drain current: 42A
Gate charge: 35nC
On-state resistance: 13.5mΩ
Power dissipation: 110W
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFR7540TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 140W
Case: DPAK
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 140W
Case: DPAK
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGW15N120H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 217W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 217W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4 EUR |
24+ | 3.07 EUR |
26+ | 2.8 EUR |
IHW15N120E1XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 62.2W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ RC
Kind of package: tube
Turn-on time: 1940ns
Gate charge: 90nC
Turn-off time: 1450ns
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 62.2W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 62.2W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ RC
Kind of package: tube
Turn-on time: 1940ns
Gate charge: 90nC
Turn-off time: 1450ns
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 62.2W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.9 EUR |
40+ | 1.79 EUR |
43+ | 1.69 EUR |
IHW15N120R3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 127W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ RC
Kind of package: tube
Gate charge: 165nC
Turn-off time: 346ns
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 127W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 127W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ RC
Kind of package: tube
Gate charge: 165nC
Turn-off time: 346ns
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 127W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.16 EUR |
29+ | 2.47 EUR |
31+ | 2.33 EUR |
IKW15N120BH6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ 6
Kind of package: tube
Gate charge: 92nC
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 100W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ 6
Kind of package: tube
Gate charge: 92nC
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 100W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKW15N120T2FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ 2
Kind of package: tube
Turn-on time: 57ns
Gate charge: 93nC
Turn-off time: 457ns
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 235W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ 2
Kind of package: tube
Turn-on time: 57ns
Gate charge: 93nC
Turn-off time: 457ns
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 235W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.84 EUR |
17+ | 4.29 EUR |
18+ | 4.05 EUR |
IRLML6344TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 6842 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
363+ | 0.2 EUR |
483+ | 0.15 EUR |
549+ | 0.13 EUR |
619+ | 0.12 EUR |
1000+ | 0.072 EUR |
1064+ | 0.067 EUR |
6000+ | 0.065 EUR |
IRLML0060TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.7A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.7A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 10022 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
196+ | 0.37 EUR |
286+ | 0.25 EUR |
334+ | 0.21 EUR |
596+ | 0.12 EUR |
633+ | 0.11 EUR |
IGW75N65H5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 160nC
Turn-on time: 61ns
Turn-off time: 215ns
Power dissipation: 198W
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 160nC
Turn-on time: 61ns
Turn-off time: 215ns
Power dissipation: 198W
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 23.84 EUR |
IGZ75N65H5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4
Type of transistor: IGBT
Case: TO247-4
Mounting: THT
Kind of package: tube
Gate charge: 166nC
Turn-on time: 37ns
Turn-off time: 415ns
Power dissipation: 197W
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4
Type of transistor: IGBT
Case: TO247-4
Mounting: THT
Kind of package: tube
Gate charge: 166nC
Turn-on time: 37ns
Turn-off time: 415ns
Power dissipation: 197W
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKW75N65EH5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 160nC
Turn-on time: 61ns
Turn-off time: 215ns
Power dissipation: 198W
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 160nC
Turn-on time: 61ns
Turn-off time: 215ns
Power dissipation: 198W
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKW75N65ES5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 164nC
Turn-on time: 86ns
Turn-off time: 185ns
Power dissipation: 197W
Collector current: 80A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 164nC
Turn-on time: 86ns
Turn-off time: 185ns
Power dissipation: 197W
Collector current: 80A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.15 EUR |
IKZ75N65EL5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 268W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-4
Mounting: THT
Kind of package: tube
Gate charge: 436nC
Turn-on time: 143ns
Turn-off time: 325ns
Power dissipation: 268W
Collector current: 100A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 268W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-4
Mounting: THT
Kind of package: tube
Gate charge: 436nC
Turn-on time: 143ns
Turn-off time: 325ns
Power dissipation: 268W
Collector current: 100A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKZ75N65ES5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-4
Mounting: THT
Kind of package: tube
Gate charge: 164nC
Turn-on time: 71ns
Turn-off time: 427ns
Power dissipation: 197W
Collector current: 80A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-4
Mounting: THT
Kind of package: tube
Gate charge: 164nC
Turn-on time: 71ns
Turn-off time: 427ns
Power dissipation: 197W
Collector current: 80A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SPW35N60CFD |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21.6A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21.6A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF540ZPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 92W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 26.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 92W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 26.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1206 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
64+ | 1.13 EUR |
90+ | 0.8 EUR |
104+ | 0.69 EUR |
110+ | 0.65 EUR |
500+ | 0.63 EUR |
AUIRF540Z |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 92W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 26.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 92W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 26.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGW40T120FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 8.99 EUR |
11+ | 6.88 EUR |
12+ | 6.49 EUR |
IKW40T120FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 700ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 700ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
IRF9530NSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -14A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -14A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFL014NTRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 1.9A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 1.9A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 1.9A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 1.9A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGB10N60TATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; D2PAK
Type of transistor: IGBT
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector current: 10A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; D2PAK
Type of transistor: IGBT
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector current: 10A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 1120 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.6 EUR |
55+ | 1.32 EUR |
64+ | 1.13 EUR |
68+ | 1.06 EUR |
IGP10N60TXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; TO220-3
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 18A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; TO220-3
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 18A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 163 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.84 EUR |
52+ | 1.4 EUR |
53+ | 1.37 EUR |
55+ | 1.3 EUR |
IKA10N60TXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7.2A; 30W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 30W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 67nC
Turn-on time: 20ns
Turn-off time: 250ns
Collector current: 7.2A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7.2A; 30W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 30W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 67nC
Turn-on time: 20ns
Turn-off time: 250ns
Collector current: 7.2A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKB10N60TATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 62nC
Turn-on time: 20ns
Turn-off time: 253ns
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 62nC
Turn-on time: 20ns
Turn-off time: 253ns
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 659 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
30+ | 2.4 EUR |
39+ | 1.87 EUR |
44+ | 1.66 EUR |
46+ | 1.56 EUR |
50+ | 1.5 EUR |
IKD10N60RATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 64nC
Turn-on time: 24ns
Turn-off time: 331ns
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 64nC
Turn-on time: 24ns
Turn-off time: 331ns
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKD10N60RFATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLU024NPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 707 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
79+ | 0.92 EUR |
96+ | 0.75 EUR |
122+ | 0.59 EUR |
166+ | 0.43 EUR |
178+ | 0.4 EUR |
525+ | 0.39 EUR |
PVG612 | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 2.4A
Switched voltage: -60...60V DC; 0...60V AC
Relay variant: MOSFET
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
Release time: 0.5ms
Operate time: 2ms
Control current: 5...25mA
Manufacturer series: PVG612
On-state resistance: 0.15Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 2.4A
Switched voltage: -60...60V DC; 0...60V AC
Relay variant: MOSFET
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
Release time: 0.5ms
Operate time: 2ms
Control current: 5...25mA
Manufacturer series: PVG612
On-state resistance: 0.15Ω
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.98 EUR |
11+ | 6.51 EUR |
PVG612ASPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 4A; 0÷60VAC; -60÷60VDC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 4A
Manufacturer series: PVG612
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Release time: 0.5ms
On-state resistance: 0.1Ω
Relay variant: MOSFET
Switched voltage: -60...60V DC; 0...60V AC
Operate time: 3.5ms
Control current: 5...25mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 4A; 0÷60VAC; -60÷60VDC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 4A
Manufacturer series: PVG612
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Release time: 0.5ms
On-state resistance: 0.1Ω
Relay variant: MOSFET
Switched voltage: -60...60V DC; 0...60V AC
Operate time: 3.5ms
Control current: 5...25mA
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 24.85 EUR |
6+ | 13.03 EUR |
PVG612S | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 2.4A
Manufacturer series: PVG612
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Release time: 0.5ms
On-state resistance: 0.15Ω
Relay variant: MOSFET
Switched voltage: -60...60V DC; 0...60V AC
Operate time: 2ms
Control current: 5...25mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 2.4A
Manufacturer series: PVG612
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Release time: 0.5ms
On-state resistance: 0.15Ω
Relay variant: MOSFET
Switched voltage: -60...60V DC; 0...60V AC
Operate time: 2ms
Control current: 5...25mA
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.78 EUR |
10+ | 7.44 EUR |
IRFP4110PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 4.5mΩ
Gate-source voltage: ±20V
Gate charge: 150nC
Technology: HEXFET®
Power dissipation: 370W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 4.5mΩ
Gate-source voltage: ±20V
Gate charge: 150nC
Technology: HEXFET®
Power dissipation: 370W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BFR93AE6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
auf Bestellung 13244 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
236+ | 0.3 EUR |
274+ | 0.26 EUR |
353+ | 0.2 EUR |
379+ | 0.19 EUR |
926+ | 0.077 EUR |
981+ | 0.073 EUR |
BFR93AWH6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
auf Bestellung 2960 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
650+ | 0.11 EUR |
782+ | 0.092 EUR |
946+ | 0.076 EUR |
1000+ | 0.072 EUR |