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BTS3035EJ BTS3035EJ INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3AB541665492749&compId=BTS3035EJ.pdf?ci_sign=eb8aa60fb56b1ae50c345cbfb20b45b1de9f9ace Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Kind of integrated circuit: low-side
Case: SO8-EP
Type of integrated circuit: power switch
Mounting: SMD
Technology: HITFET®
Kind of output: N-Channel
Operating temperature: -40...150°C
Turn-on time: 115µs
Turn-off time: 210µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.86 EUR
43+1.67 EUR
75+0.96 EUR
79+0.92 EUR
Mindestbestellmenge: 39
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BTS3035TF BTS3035TF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3AC27C82481C749&compId=BTS3035TF.pdf?ci_sign=b9e50ab739c8031922b9b9606b4a7ab5f5a679d1 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Kind of integrated circuit: low-side
Case: PG-TO252-3
Type of integrated circuit: power switch
Mounting: SMD
Technology: HITFET®
Kind of output: N-Channel
Operating temperature: -40...150°C
Turn-on time: 115µs
Turn-off time: 210µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
auf Bestellung 1139 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.03 EUR
39+1.86 EUR
41+1.74 EUR
62+1.16 EUR
66+1.09 EUR
1000+1.04 EUR
Mindestbestellmenge: 36
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IPC90N04S5L-3R3 IPC90N04S5L-3R3 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate charge: 40nC
Drain current: 90A
Power dissipation: 62W
Produkt ist nicht verfügbar
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IPC90N04S5-3R6 IPC90N04S5-3R6 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate charge: 32.6nC
Drain current: 90A
Power dissipation: 63W
Produkt ist nicht verfügbar
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IPD90N04S403ATMA1 INFINEON TECHNOLOGIES Infineon-IPD90N04S4_03-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291ca399955e75&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 90A; 94W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Drain current: 90A
Power dissipation: 94W
Application: automotive industry
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.69 EUR
Mindestbestellmenge: 2500
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IPB90N04S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 90A; 150W; D2PAK,TO263AB; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Case: D2PAK; TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Gate charge: 118nC
Drain current: 90A
Power dissipation: 150W
Application: automotive industry
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.4 EUR
Mindestbestellmenge: 1000
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SPD07N60C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 7.3A; 83W; DPAK; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Gate charge: 21nC
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.86 EUR
Mindestbestellmenge: 2500
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IPD35N10S3L26ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I70N10S3L_12-DS-01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9085629c594b&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 140A
Produkt ist nicht verfügbar
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IRFU024NPBFAKLA1 INFINEON TECHNOLOGIES irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c&redirId=112276 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 55V; 17A; 45W; IPAK
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: 20V
Mounting: THT
Gate charge: 20nC
auf Bestellung 695 Stücke:
Lieferzeit 14-21 Tag (e)
300+0.31 EUR
Mindestbestellmenge: 300
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IPD50R500CEAUMA1 IPD50R500CEAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998BAD4E4CB169820&compId=IPD50R500CE.pdf?ci_sign=1c280a951ac6d41a472b96add4a573d6c135a84d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 18.7nC
On-state resistance: 0.5Ω
Drain current: 4.8A
Gate-source voltage: ±20V
Pulsed drain current: 24A
Drain-source voltage: 500V
Power dissipation: 57W
Technology: CoolMOS™ CE
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPP15P10PLHXKSA1 SPP15P10PLHXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92DF4896A411CC&compId=SPP15P10PLHXKSA1-DTE.pdf?ci_sign=ead7ae3ae2309c3e298e1a2cdb1971d8711f9449 Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.2Ω
Gate-source voltage: ±20V
Power dissipation: 128W
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.21 EUR
Mindestbestellmenge: 7
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S25FL064LABBHI020 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL064LABBHI023 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S25FL064LABBHI030 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL064LABBHV020 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL064LABBHV030 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL064LABMFA000 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Application: automotive
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL064LABMFA001 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Application: automotive
Kind of package: tube
Produkt ist nicht verfügbar
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S25FL064LABMFA003 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Application: automotive
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S25FL064LABMFB000 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL064LABMFB003 INFINEON TECHNOLOGIES download Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S25FL064LABMFB010 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL064LABMFB011 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Kind of package: tube
Produkt ist nicht verfügbar
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S25FL064LABMFI000 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL064LABMFI001 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Produkt ist nicht verfügbar
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S25FL064LABMFI003 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TD140N16SOFHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859E922AC27FA469&compId=TD140N16SOF.pdf?ci_sign=46084510e4e1a8a067f4abc911b31c3cc0ffe400 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; BG-PB34SB-1; Ufmax: 1.41V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150mA
Max. forward voltage: 1.41V
Load current: 140A
Max. load current: 220A
Max. off-state voltage: 1.6kV
Case: BG-PB34SB-1
Max. forward impulse current: 4.7kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Produkt ist nicht verfügbar
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TT140N16SOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE323884A5E469&compId=TT140N16SOF.pdf?ci_sign=3ac1d428273e50d9fa2dfde1fd294f918b41b19d Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; BG-PB34SB-1; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate current: 150mA
Max. forward voltage: 1.41V
Load current: 140A
Max. off-state voltage: 1.6kV
Case: BG-PB34SB-1
Max. forward impulse current: 4.7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
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IDH12G65C5 IDH12G65C5 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB98032D6C7EFA8&compId=IDH12G65C5-DTE.pdf?ci_sign=f7675e8ad44592c6cb5be6b93c6485ce3fda8378 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; PG-TO220-2; 104W
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Case: PG-TO220-2
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: tube
Leakage current: 2.4µA
Heatsink thickness: 1.17...137mm
Max. forward voltage: 1.8V
Load current: 12A
Max. forward impulse current: 83A
Power dissipation: 104W
Max. off-state voltage: 650V
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IPL60R104C7AUMA1 IPL60R104C7AUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA5B331C4E0E143&compId=IPL60R104C7.pdf?ci_sign=76f98e65114e797aa5abafdd5744d3beaeb913fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 122W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 122W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 42nC
Produkt ist nicht verfügbar
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IRF6727MTRPBF IRF6727MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F719561A82EF1A303005056AB0C4F&compId=irf6727mpbf.pdf?ci_sign=0d47fe75e18f0aeb0e9cfe7b5a6140800bd8f964 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BAS16SH6727XTSA1 INFINEON TECHNOLOGIES bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 200mA; 4ns; SOT363; Ufmax: 1.25V; Ir: 1uA
Case: SOT363
Mounting: SMD
Type of diode: switching
Semiconductor structure: triple
Reverse recovery time: 4ns
Leakage current: 1µA
Load current: 0.2A
Max. load current: 0.2A
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Max. off-state voltage: 80V
Application: automotive industry
auf Bestellung 15000 Stücke:
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3000+0.084 EUR
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F475R12KS4BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B427F7AA228469&compId=F4-75R12KS4.pdf?ci_sign=8a7c38558ac90818b8a03233c57e0f409e79df4d Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: AG-ECONO2-6
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 500W
Max. off-state voltage: 1.2kV
Technology: EconoPACK™ 2
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
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F4150R12KS4BOSA1 F4150R12KS4BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA585AEB73C81A0C4&compId=F4150R12KS4BOSA1.pdf?ci_sign=bcef10772012161925ebe1847340da5b430f4f81 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W
Technology: EconoPACK™ 3
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x2; NTC thermistor
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Power dissipation: 960W
Max. off-state voltage: 1.2kV
Case: AG-ECONO3-4
Produkt ist nicht verfügbar
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FS150R12KT4BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8C87F547E493D7&compId=FS150R12KT4.pdf?ci_sign=b9e2fda300a75c51352ce08e24e35235e6476809 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Technology: EconoPACK™ 3
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Power dissipation: 750W
Max. off-state voltage: 1.2kV
Case: AG-ECONO3-4
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FS200R12KT4RB11BOSA1 INFINEON TECHNOLOGIES Infineon-FS200R12KT4R_B11-DS-v02_01-en_de.pdf?fileId=db3a30432a14dd54012a3336af6002b6 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: AG-ECONO3-4
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1kW
Max. off-state voltage: 1.2kV
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
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FP50R12KT3BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA90E7E5DA4B53C0C4&compId=FP50R12KT3BOSA1.pdf?ci_sign=e5bfa2ac21af8ba4412256f70bb668388033ff0a Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: AG-ECONO3-3
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 280W
Max. off-state voltage: 1.2kV
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Application: Inverter
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FP100R12KT4B11BOSA1 INFINEON TECHNOLOGIES Infineon-FP100R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a3043156fd57301161a6b3faf1e18 Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: AG-ECONO3-3
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Power dissipation: 515W
Max. off-state voltage: 1.2kV
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
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BFN24E6327 BFN24E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C80812817AA469&compId=BFN24.pdf?ci_sign=f068f47347575ac45203495cc5a97ebd6f12e29c Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 250V; 0.2A; 0.36W; SOT23
Mounting: SMD
Collector-emitter voltage: 250V
Frequency: 70MHz
Polarisation: bipolar
Type of transistor: NPN
Case: SOT23
Collector current: 0.2A
Power dissipation: 0.36W
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BTS70021EPPXUMA1 INFINEON TECHNOLOGIES BTS7002-1EPP_v1.03_4-29-19.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 21A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Kind of package: reel; tape
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Case: PG-TSDSO-14
Type of integrated circuit: power switch
Mounting: SMD
Operating temperature: -40...150°C
On-state resistance: 2.6mΩ
Number of channels: 1
Supply voltage: 4.1...28V DC
Output current: 21A
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BFR193L3E6327XTMA1 INFINEON TECHNOLOGIES bfr193l3.pdf?folderId=db3a30431400ef68011425b2dfaf05c6&fileId=db3a30431400ef680114271fc1ec06db Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
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15000+0.16 EUR
Mindestbestellmenge: 15000
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IPW60R099CPFKSA1 IPW60R099CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDF89F811F98A4020D6&compId=IPW60R099CP.pdf?ci_sign=fa5ac79b9c1d4d8e8023ad58506c7e9aba5240a7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW60R125CPFKSA1 IPW60R125CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E1B2AF78D1BF&compId=IPW60R125CP-DTE.pdf?ci_sign=538fed47957f97bf4916397747f0a9fe7c4f3e94 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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15+4.8 EUR
16+4.53 EUR
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IPW60R125P6XKSA1 IPW60R125P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59543CDD019D1BF&compId=IPW60R125P6-DTE.pdf?ci_sign=088cedc48e6352559a5ff6e64b1bf0a9857977f4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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12+6.02 EUR
13+5.76 EUR
14+5.45 EUR
Mindestbestellmenge: 12
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IPW60R070CFD7 IPW60R070CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7F2EE2B5874A&compId=IPW60R070CFD7.pdf?ci_sign=68bde6167c82ae31c9a715e7932f17ad13c37a54 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R080P7 IPW60R080P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1FE04C8F66749&compId=IPW60R080P7.pdf?ci_sign=195cee5d2680397630540f16ad4b24f277950462 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPW60R299CPFKSA1 IPW60R299CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594DC1E9E42B1BF&compId=IPW60R299CP-DTE.pdf?ci_sign=8119d6d1da96d49cea4c2f247bd22ecf791abcfd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 98W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 98W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R125C6FKSA1 IPW60R125C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E8299B4771BF&compId=IPW60R125C6-DTE.pdf?ci_sign=2cd58f7e86f660b20c7fc99d26ffae291963f804 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW60R165CPFKSA1 IPW60R165CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E04B6D6851BF&compId=IPW60R165CP-DTE.pdf?ci_sign=87e4656475c1ecd10952d47f3a3d223a71b93867 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R070P6XKSA1 IPW60R070P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59546FC0F7031BF&compId=IPW60R070P6-DTE.pdf?ci_sign=51b5ba3d1091fd0d4ee959109032092458bb384e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R070C6FKSA1 IPW60R070C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E708A74B71BF&compId=IPW60R070C6-DTE.pdf?ci_sign=a76dc45b803a2fd0375610b9d1330af0e3b06965 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R075CPFKSA1 IPW60R075CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E405349C71BF&compId=IPW60R075CP-DTE.pdf?ci_sign=5a09d9d26b7f0748255f3671620f7de31ad8b18d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R099C7XKSA1 IPW60R099C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5954C50104B51BF&compId=IPW60R099C7-DTE.pdf?ci_sign=12bc2fec5987eb013d3c3d8715002e0884a2c524 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R160C6FKSA1 IPW60R160C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595261245E051BF&compId=IPW60R160C6-DTE.pdf?ci_sign=6425d46596dbaab233c87914e1115ce6b5b52ea6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R160P6FKSA1 IPW60R160P6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595325472C251BF&compId=IPW60R160P6-DTE.pdf?ci_sign=47ac9163035aeb74dc0348932449acacc7cc8b4b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R170CFD7 IPW60R170CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA8190E8C9A74A&compId=IPW60R170CFD7.pdf?ci_sign=32600af48a7fd72f2eedb26926faa7eb3392797a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 75W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 75W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R199CPFKSA1 IPW60R199CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594DE899C65D1BF&compId=IPW60R199CP-DTE.pdf?ci_sign=8633e0ce83a8feedd0e7cc8d4606163b0f64beb2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R280C6FKSA1 IPW60R280C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5952581FF26B1BF&compId=IPW60R280C6-DTE.pdf?ci_sign=e60f596b485e85c4b8207311423c3bc90ab9094f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R280E6FKSA1 IPW60R280E6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5952A490237D1BF&compId=IPW60R280E6-DTE.pdf?ci_sign=b6947e8bff4ec18032ca878fc86a7f543738e376 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R280P6FKSA1 IPW60R280P6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5954138267DF1BF&compId=IPW60R280P6-DTE.pdf?ci_sign=12445d377c5a1acad00e0c56c8efd6e1e601bd0f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS3035EJ pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3AB541665492749&compId=BTS3035EJ.pdf?ci_sign=eb8aa60fb56b1ae50c345cbfb20b45b1de9f9ace
BTS3035EJ
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Kind of integrated circuit: low-side
Case: SO8-EP
Type of integrated circuit: power switch
Mounting: SMD
Technology: HITFET®
Kind of output: N-Channel
Operating temperature: -40...150°C
Turn-on time: 115µs
Turn-off time: 210µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.86 EUR
43+1.67 EUR
75+0.96 EUR
79+0.92 EUR
Mindestbestellmenge: 39
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BTS3035TF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3AC27C82481C749&compId=BTS3035TF.pdf?ci_sign=b9e50ab739c8031922b9b9606b4a7ab5f5a679d1
BTS3035TF
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Kind of integrated circuit: low-side
Case: PG-TO252-3
Type of integrated circuit: power switch
Mounting: SMD
Technology: HITFET®
Kind of output: N-Channel
Operating temperature: -40...150°C
Turn-on time: 115µs
Turn-off time: 210µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
auf Bestellung 1139 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
39+1.86 EUR
41+1.74 EUR
62+1.16 EUR
66+1.09 EUR
1000+1.04 EUR
Mindestbestellmenge: 36
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IPC90N04S5L-3R3
IPC90N04S5L-3R3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate charge: 40nC
Drain current: 90A
Power dissipation: 62W
Produkt ist nicht verfügbar
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IPC90N04S5-3R6
IPC90N04S5-3R6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate charge: 32.6nC
Drain current: 90A
Power dissipation: 63W
Produkt ist nicht verfügbar
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IPD90N04S403ATMA1 Infineon-IPD90N04S4_03-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291ca399955e75&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 90A; 94W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Drain current: 90A
Power dissipation: 94W
Application: automotive industry
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.69 EUR
Mindestbestellmenge: 2500
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IPB90N04S402ATMA1 Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 90A; 150W; D2PAK,TO263AB; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Case: D2PAK; TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Gate charge: 118nC
Drain current: 90A
Power dissipation: 150W
Application: automotive industry
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.4 EUR
Mindestbestellmenge: 1000
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SPD07N60C3ATMA1 Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 7.3A; 83W; DPAK; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Gate charge: 21nC
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.86 EUR
Mindestbestellmenge: 2500
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IPD35N10S3L26ATMA1 Infineon-IPP_B_I70N10S3L_12-DS-01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9085629c594b&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 140A
Produkt ist nicht verfügbar
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IRFU024NPBFAKLA1 irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c&redirId=112276
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 55V; 17A; 45W; IPAK
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: 20V
Mounting: THT
Gate charge: 20nC
auf Bestellung 695 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
300+0.31 EUR
Mindestbestellmenge: 300
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IPD50R500CEAUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998BAD4E4CB169820&compId=IPD50R500CE.pdf?ci_sign=1c280a951ac6d41a472b96add4a573d6c135a84d
IPD50R500CEAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 18.7nC
On-state resistance: 0.5Ω
Drain current: 4.8A
Gate-source voltage: ±20V
Pulsed drain current: 24A
Drain-source voltage: 500V
Power dissipation: 57W
Technology: CoolMOS™ CE
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPP15P10PLHXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92DF4896A411CC&compId=SPP15P10PLHXKSA1-DTE.pdf?ci_sign=ead7ae3ae2309c3e298e1a2cdb1971d8711f9449
SPP15P10PLHXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.2Ω
Gate-source voltage: ±20V
Power dissipation: 128W
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABBHI020 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL064LABBHI023 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABBHI030 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABBHV020 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABBHV030 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL064LABMFA000 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Application: automotive
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFA001 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Application: automotive
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFA003 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Application: automotive
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFB000 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFB003 download
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFB010 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFB011 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFI000 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFI001 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFI003 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TD140N16SOFHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859E922AC27FA469&compId=TD140N16SOF.pdf?ci_sign=46084510e4e1a8a067f4abc911b31c3cc0ffe400
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; BG-PB34SB-1; Ufmax: 1.41V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150mA
Max. forward voltage: 1.41V
Load current: 140A
Max. load current: 220A
Max. off-state voltage: 1.6kV
Case: BG-PB34SB-1
Max. forward impulse current: 4.7kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Produkt ist nicht verfügbar
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TT140N16SOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE323884A5E469&compId=TT140N16SOF.pdf?ci_sign=3ac1d428273e50d9fa2dfde1fd294f918b41b19d
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; BG-PB34SB-1; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate current: 150mA
Max. forward voltage: 1.41V
Load current: 140A
Max. off-state voltage: 1.6kV
Case: BG-PB34SB-1
Max. forward impulse current: 4.7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Produkt ist nicht verfügbar
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IDH12G65C5 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB98032D6C7EFA8&compId=IDH12G65C5-DTE.pdf?ci_sign=f7675e8ad44592c6cb5be6b93c6485ce3fda8378
IDH12G65C5
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; PG-TO220-2; 104W
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Case: PG-TO220-2
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: tube
Leakage current: 2.4µA
Heatsink thickness: 1.17...137mm
Max. forward voltage: 1.8V
Load current: 12A
Max. forward impulse current: 83A
Power dissipation: 104W
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
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IPL60R104C7AUMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA5B331C4E0E143&compId=IPL60R104C7.pdf?ci_sign=76f98e65114e797aa5abafdd5744d3beaeb913fa
IPL60R104C7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 122W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 122W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 42nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6727MTRPBF pVersion=0046&contRep=ZT&docId=E21F719561A82EF1A303005056AB0C4F&compId=irf6727mpbf.pdf?ci_sign=0d47fe75e18f0aeb0e9cfe7b5a6140800bd8f964
IRF6727MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS16SH6727XTSA1 bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 200mA; 4ns; SOT363; Ufmax: 1.25V; Ir: 1uA
Case: SOT363
Mounting: SMD
Type of diode: switching
Semiconductor structure: triple
Reverse recovery time: 4ns
Leakage current: 1µA
Load current: 0.2A
Max. load current: 0.2A
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Max. off-state voltage: 80V
Application: automotive industry
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.084 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
F475R12KS4BOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B427F7AA228469&compId=F4-75R12KS4.pdf?ci_sign=8a7c38558ac90818b8a03233c57e0f409e79df4d
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: AG-ECONO2-6
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 500W
Max. off-state voltage: 1.2kV
Technology: EconoPACK™ 2
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
F4150R12KS4BOSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA585AEB73C81A0C4&compId=F4150R12KS4BOSA1.pdf?ci_sign=bcef10772012161925ebe1847340da5b430f4f81
F4150R12KS4BOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W
Technology: EconoPACK™ 3
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x2; NTC thermistor
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Power dissipation: 960W
Max. off-state voltage: 1.2kV
Case: AG-ECONO3-4
Produkt ist nicht verfügbar
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FS150R12KT4BOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8C87F547E493D7&compId=FS150R12KT4.pdf?ci_sign=b9e2fda300a75c51352ce08e24e35235e6476809
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Technology: EconoPACK™ 3
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Power dissipation: 750W
Max. off-state voltage: 1.2kV
Case: AG-ECONO3-4
Produkt ist nicht verfügbar
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FS200R12KT4RB11BOSA1 Infineon-FS200R12KT4R_B11-DS-v02_01-en_de.pdf?fileId=db3a30432a14dd54012a3336af6002b6
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: AG-ECONO3-4
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1kW
Max. off-state voltage: 1.2kV
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FP50R12KT3BOSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA90E7E5DA4B53C0C4&compId=FP50R12KT3BOSA1.pdf?ci_sign=e5bfa2ac21af8ba4412256f70bb668388033ff0a
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: AG-ECONO3-3
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 280W
Max. off-state voltage: 1.2kV
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Application: Inverter
Produkt ist nicht verfügbar
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FP100R12KT4B11BOSA1 Infineon-FP100R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a3043156fd57301161a6b3faf1e18
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: AG-ECONO3-3
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Power dissipation: 515W
Max. off-state voltage: 1.2kV
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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BFN24E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C80812817AA469&compId=BFN24.pdf?ci_sign=f068f47347575ac45203495cc5a97ebd6f12e29c
BFN24E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 250V; 0.2A; 0.36W; SOT23
Mounting: SMD
Collector-emitter voltage: 250V
Frequency: 70MHz
Polarisation: bipolar
Type of transistor: NPN
Case: SOT23
Collector current: 0.2A
Power dissipation: 0.36W
Produkt ist nicht verfügbar
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BTS70021EPPXUMA1 BTS7002-1EPP_v1.03_4-29-19.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 21A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Kind of package: reel; tape
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Case: PG-TSDSO-14
Type of integrated circuit: power switch
Mounting: SMD
Operating temperature: -40...150°C
On-state resistance: 2.6mΩ
Number of channels: 1
Supply voltage: 4.1...28V DC
Output current: 21A
Produkt ist nicht verfügbar
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BFR193L3E6327XTMA1 bfr193l3.pdf?folderId=db3a30431400ef68011425b2dfaf05c6&fileId=db3a30431400ef680114271fc1ec06db
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 210000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.16 EUR
Mindestbestellmenge: 15000
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDF89F811F98A4020D6&compId=IPW60R099CP.pdf?ci_sign=fa5ac79b9c1d4d8e8023ad58506c7e9aba5240a7
IPW60R099CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R125CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E1B2AF78D1BF&compId=IPW60R125CP-DTE.pdf?ci_sign=538fed47957f97bf4916397747f0a9fe7c4f3e94
IPW60R125CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.42 EUR
15+4.8 EUR
16+4.53 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R125P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59543CDD019D1BF&compId=IPW60R125P6-DTE.pdf?ci_sign=088cedc48e6352559a5ff6e64b1bf0a9857977f4
IPW60R125P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.02 EUR
13+5.76 EUR
14+5.45 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R070CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7F2EE2B5874A&compId=IPW60R070CFD7.pdf?ci_sign=68bde6167c82ae31c9a715e7932f17ad13c37a54
IPW60R070CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R080P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1FE04C8F66749&compId=IPW60R080P7.pdf?ci_sign=195cee5d2680397630540f16ad4b24f277950462
IPW60R080P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPW60R299CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594DC1E9E42B1BF&compId=IPW60R299CP-DTE.pdf?ci_sign=8119d6d1da96d49cea4c2f247bd22ecf791abcfd
IPW60R299CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 98W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 98W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R125C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E8299B4771BF&compId=IPW60R125C6-DTE.pdf?ci_sign=2cd58f7e86f660b20c7fc99d26ffae291963f804
IPW60R125C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R165CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E04B6D6851BF&compId=IPW60R165CP-DTE.pdf?ci_sign=87e4656475c1ecd10952d47f3a3d223a71b93867
IPW60R165CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R070P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59546FC0F7031BF&compId=IPW60R070P6-DTE.pdf?ci_sign=51b5ba3d1091fd0d4ee959109032092458bb384e
IPW60R070P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R070C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E708A74B71BF&compId=IPW60R070C6-DTE.pdf?ci_sign=a76dc45b803a2fd0375610b9d1330af0e3b06965
IPW60R070C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R075CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E405349C71BF&compId=IPW60R075CP-DTE.pdf?ci_sign=5a09d9d26b7f0748255f3671620f7de31ad8b18d
IPW60R075CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R099C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5954C50104B51BF&compId=IPW60R099C7-DTE.pdf?ci_sign=12bc2fec5987eb013d3c3d8715002e0884a2c524
IPW60R099C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R160C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595261245E051BF&compId=IPW60R160C6-DTE.pdf?ci_sign=6425d46596dbaab233c87914e1115ce6b5b52ea6
IPW60R160C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R160P6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595325472C251BF&compId=IPW60R160P6-DTE.pdf?ci_sign=47ac9163035aeb74dc0348932449acacc7cc8b4b
IPW60R160P6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R170CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA8190E8C9A74A&compId=IPW60R170CFD7.pdf?ci_sign=32600af48a7fd72f2eedb26926faa7eb3392797a
IPW60R170CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 75W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 75W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R199CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594DE899C65D1BF&compId=IPW60R199CP-DTE.pdf?ci_sign=8633e0ce83a8feedd0e7cc8d4606163b0f64beb2
IPW60R199CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R280C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5952581FF26B1BF&compId=IPW60R280C6-DTE.pdf?ci_sign=e60f596b485e85c4b8207311423c3bc90ab9094f
IPW60R280C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R280E6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5952A490237D1BF&compId=IPW60R280E6-DTE.pdf?ci_sign=b6947e8bff4ec18032ca878fc86a7f543738e376
IPW60R280E6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R280P6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5954138267DF1BF&compId=IPW60R280P6-DTE.pdf?ci_sign=12445d377c5a1acad00e0c56c8efd6e1e601bd0f
IPW60R280P6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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