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CY7C1440KV33-250BZXI INFINEON TECHNOLOGIES Infineon-CY7C1440KV33_CY7C1442KV33_CY7C1440KVE33_36-Mbit_(1_M_36_2_M_18)_Pipelined_Sync_SRAM_(With_ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecee95a4967&utm_source=cypress&utm_medium=referral&utm_campaign=20211 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; -40÷85°C
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Frequency: 250MHz
Kind of package: in-tray
Case: FBGA165
Produkt ist nicht verfügbar
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CY7C1480BV33-250BZI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 250MHz
Kind of package: in-tray
Case: FBGA165
Produkt ist nicht verfügbar
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IPA60R125P6XKSA1 IPA60R125P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D3ADBD8771BF&compId=IPA60R125P6-DTE.pdf?ci_sign=509a3cf4af1c085ef703fbfb7483c4f16578c9d6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB123N10N3GATMA1 IPB123N10N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BADF5E3B00A11C&compId=IPB123N10N3G-DTE.pdf?ci_sign=18749469d85cdd8fcc825ad705ac3b9f22b73cd7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Power dissipation: 94W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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AIHD04N60RATMA1 AIHD04N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA427AB6E31820&compId=AIHD04N60R.pdf?ci_sign=dcd0fb202ad805a55910c32a432f29f8924ef561 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Case: DPAK
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: SMD
Technology: TRENCHSTOP™ RC
Turn-on time: 22ns
Gate charge: 27nC
Turn-off time: 317ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Power dissipation: 75W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Produkt ist nicht verfügbar
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AIHD04N60RFATMA1 AIHD04N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA47033238F820&compId=AIHD04N60RF.pdf?ci_sign=50811ec2801f1a9e015cf51dff02af3193b8f3d1 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Case: DPAK
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: SMD
Technology: TRENCHSTOP™
Turn-on time: 19ns
Gate charge: 27nC
Turn-off time: 153ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Power dissipation: 75W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IPD068N10N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD068N10N3G-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1eb7aeb615d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 90A; 150W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 150W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Gate charge: 51nC
auf Bestellung 20000 Stücke:
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2500+1.27 EUR
Mindestbestellmenge: 2500
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BCR112 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C047218843DAF1A6F5005056AB5A8F&compId=bcr112series.pdf?ci_sign=d5bf832fad7f3133f513aabca068cb74703f607c Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Produkt ist nicht verfügbar
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IPD65R250E6XTMA1 IPD65R250E6XTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8D36BB609B1BF&compId=IPD65R250E6-DTE.pdf?ci_sign=1e26743aef67611033c5d4bb27513635a50357d7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.25Ω
Drain current: 16.1A
Gate-source voltage: ±20V
Power dissipation: 208W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSP603S2L BSP603S2L INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5949351EA6CD16469&compId=BSP603S2L.pdf?ci_sign=f8f722eb04392bc5053d8ee981b89e1032944b05 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.2A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC027N06LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC027N06LS5-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101596e1c881234d6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 84A; Idm: 400A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Pulsed drain current: 400A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS®
Produkt ist nicht verfügbar
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TLE4268GXUMA2 TLE4268GXUMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED783FA94C5CA18E259&compId=TLE4268G.pdf?ci_sign=206b89d3d44db8a7ad9e5b1d89050884c81d51d0 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-DSO-20
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.15A
Voltage drop: 0.25V
Output voltage: 5V
Input voltage: 5.5...45V
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.8 EUR
44+1.63 EUR
48+1.52 EUR
100+1.4 EUR
250+1.29 EUR
Mindestbestellmenge: 40
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ESD230B1W0201E6327XTSA1 INFINEON TECHNOLOGIES Infineon-ESD230-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c031740b5934 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 56W; 6.1V; 3A; bidirectional; 0201,0603; Ch: 1; -55÷125°C
Type of diode: TVS
Peak pulse power dissipation: 56W
Max. off-state voltage: 5.5V
Breakdown voltage: 6.1V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: 0201; 0603
Mounting: SMD
Leakage current: 0.1µA
Application: general purpose
Number of channels: 1
Operating temperature: -55...125°C
auf Bestellung 15000 Stücke:
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15000+0.033 EUR
Mindestbestellmenge: 15000
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BAT68E6327HTSA1 BAT68E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E053C1DBDA0469&compId=BAT6804E6327HTSA1.pdf?ci_sign=48c3ec698637286826c432ea3d7330d5dff54f64 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 8V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Power dissipation: 0.15W
auf Bestellung 2733 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
368+0.19 EUR
421+0.17 EUR
500+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 313
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BAT165E6327HTSA1 BAT165E6327HTSA1 INFINEON TECHNOLOGIES BAT165E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.75A
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD323
Max. forward voltage: 0.74V
Load current: 0.75A
Max. off-state voltage: 40V
Semiconductor structure: single diode
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BAT6804E6327HTSA1 BAT6804E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E053C1DBDA0469&compId=BAT6804E6327HTSA1.pdf?ci_sign=48c3ec698637286826c432ea3d7330d5dff54f64 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 8V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: double series
Max. forward voltage: 0.5V
Power dissipation: 0.15W
auf Bestellung 5175 Stücke:
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218+0.33 EUR
272+0.26 EUR
311+0.23 EUR
Mindestbestellmenge: 218
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BCR533E6327HTSA1 BCR533E6327HTSA1 INFINEON TECHNOLOGIES bcr533.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a3730114407da25d030a Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
410+0.17 EUR
537+0.13 EUR
588+0.12 EUR
668+0.11 EUR
1000+0.087 EUR
Mindestbestellmenge: 358
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BCR583E6327HTSA1 BCR583E6327HTSA1 INFINEON TECHNOLOGIES bcr583.pdf_folderid=db3a30431428a373011440769fd70304&fileid=db3a30431428a3730114408538a1030f.pdf bcr583.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114408538a1030f Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
770+0.093 EUR
861+0.083 EUR
932+0.077 EUR
981+0.073 EUR
1073+0.067 EUR
Mindestbestellmenge: 455
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BAT5405E6327HTSA1 BAT5405E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT23
Mounting: SMD
Type of diode: Schottky switching
Load current: 0.2A
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Semiconductor structure: common cathode; double
Max. off-state voltage: 30V
auf Bestellung 4547 Stücke:
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455+0.16 EUR
642+0.11 EUR
705+0.1 EUR
900+0.08 EUR
991+0.072 EUR
1011+0.071 EUR
Mindestbestellmenge: 455
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BCR401UE6327HTSA1 BCR401UE6327HTSA1 INFINEON TECHNOLOGIES dgdl?fileId=5546d4624b0b249c014b6e645ed42f3d Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 60mA
Number of channels: 1
Mounting: SMD
Operating voltage: 1.4...40V DC
auf Bestellung 5450 Stücke:
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162+0.44 EUR
199+0.36 EUR
223+0.32 EUR
256+0.28 EUR
264+0.27 EUR
Mindestbestellmenge: 162
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BSP372NH6327XTSA1 BSP372NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A752039388310B&compId=BSP372NH6327XTSA1.pdf?ci_sign=a6d7ddd6c52e49955daaad2485cc68445ea0abcb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 851 Stücke:
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65+1.12 EUR
95+0.75 EUR
186+0.38 EUR
197+0.36 EUR
Mindestbestellmenge: 65
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CY8C28452-24PVXIT INFINEON TECHNOLOGIES download Category: Integrated circuits - Unclassified
Description: CY8C28452-24PVXIT
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+9.94 EUR
Mindestbestellmenge: 1000
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IDW100E60FKSA1 IDW100E60FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA2820D32932469&compId=IDW100E60FKSA1.pdf?ci_sign=270dfcfc56663cc33471054f1c8a3589c99f451d Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO247-3
auf Bestellung 103 Stücke:
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19+3.89 EUR
33+2.19 EUR
35+2.06 EUR
60+1.99 EUR
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IAUC60N04S6L030HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6L030H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309120315fef Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Mounting: SMD
Case: PG-TDSON-8
Technology: OptiMOS™ 6
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 35nC
On-state resistance: 4.2mΩ
Gate-source voltage: ±16V
Drain current: 22A
Drain-source voltage: 40V
Power dissipation: 75W
Pulsed drain current: 311A
Kind of channel: enhancement
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IAUC60N04S6L039ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6L039-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c511cb70df6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 54A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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IAUC60N04S6L045HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6L045H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753091111b5fec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 18A; Idm: 193A; 52W
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Gate-source voltage: ±16V
Gate charge: 19nC
On-state resistance: 6mΩ
Power dissipation: 52W
Drain current: 18A
Drain-source voltage: 40V
Pulsed drain current: 193A
Polarisation: unipolar
Kind of channel: enhancement
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IAUC60N04S6N031HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6N031H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309103dd5fe9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Mounting: SMD
Case: PG-TDSON-8
Technology: OptiMOS™ 6
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 3.6mΩ
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 40V
Power dissipation: 75W
Pulsed drain current: 311A
Kind of channel: enhancement
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IAUC60N04S6N044ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6N044-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c8843d110a5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 50A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
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IAUC60N04S6N050HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6N050H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753090f4715fe6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Pulsed drain current: 171A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
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IPA600N25NM3SXKSA1 IPA600N25NM3SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA600N25NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5d19624b6e3d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S25FL064LABNFV040 INFINEON TECHNOLOGIES INFN-S-A0017271261-1.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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IPP027N08N5AKSA1 IPP027N08N5AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAFCABC5B6C11C&compId=IPP027N08N5-DTE.pdf?ci_sign=d638ad1442dc6e4a6a31df125f3b8d30b1be77b3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BSC027N04LSGATMA1 BSC027N04LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C28C362FDB011C&compId=BSC027N04LSG-DTE.pdf?ci_sign=b4036c8c678d896af86300efb48f1e355064edf4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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ISC027N10NM6ATMA1 INFINEON TECHNOLOGIES Infineon-ISC027N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017babb690f45f94 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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Lieferzeit 14-21 Tag (e)
5000+2.86 EUR
Mindestbestellmenge: 5000
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BSC027N10NS5ATMA1 INFINEON TECHNOLOGIES BSC027N10NS5_Rev2.0_2018-02-28.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+3.68 EUR
Mindestbestellmenge: 5000
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IKP30N65H5XKSA1 IKP30N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BDACF6933851BF&compId=IKP30N65H5-DTE.pdf?ci_sign=2782473722d787c91839e4ac87cde0214d604f30 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 36A; 188W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 36A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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BTS3110N BTS3110N INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB927E883E4469&compId=BTS3110N.pdf?ci_sign=d007588d32954c0a1e0c330620de85b0f1dd61ef Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: N-Channel
Case: PG-SOT223-4
Type of integrated circuit: power switch
Operating temperature: -40...150°C
Turn-on time: 45µs
Turn-off time: 60µs
On-state resistance: 0.2Ω
Number of channels: 1
Output current: 1.4A
Output voltage: 42V
Technology: HITFET®; SIPMOS™
auf Bestellung 2119 Stücke:
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25+2.96 EUR
38+1.9 EUR
59+1.22 EUR
63+1.14 EUR
500+1.12 EUR
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2EDL23I06PJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD85B5CF77038BF&compId=2EDL23x06xx.pdf?ci_sign=b1ad70b6d943ae40ef982d8b7da102dac65c5aea Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-14
Output current: -2.5...1.8A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
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CY7C4122KV13-106FCXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 1066MHz
Produkt ist nicht verfügbar
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CY2308SXC-2 INFINEON TECHNOLOGIES Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Unclassified
Description: CY2308SXC-2
auf Bestellung 868 Stücke:
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48+13.07 EUR
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BSC018N04LSGATMA1 BSC018N04LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A1D665F78576611C&compId=BSC018N04LSG-DTE.pdf?ci_sign=a448f615d48397db4a1ff62d882c665a5be96e9f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD028N06NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPD028N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8386267f0183a84489a82df3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 60V; 139A; 150W; DPAK; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 139A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 2.85mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Technology: SiC
Electrical mounting: SMT
auf Bestellung 4000 Stücke:
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2000+0.94 EUR
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IPD038N06NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPD038N06NF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8386267f0183ad6c7fb66010 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 60V; 120A; 107W; DPAK; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 107W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 3.85mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Technology: SiC
Electrical mounting: SMT
auf Bestellung 2000 Stücke:
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2000+0.56 EUR
Mindestbestellmenge: 2000
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IKA08N65F5XKSA1 INFINEON TECHNOLOGIES DS_IKA08N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af92196985c58 Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 400 Stücke:
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50+2.04 EUR
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BSZ123N08NS3GATMA1 BSZ123N08NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E449F0943811C&compId=BSZ123N08NS3G-DTE.pdf?ci_sign=3c3f5976f273d1c142310ae9d70a9357326ae452 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 66W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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TLE42764GV50ATMA1 TLE42764GV50ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE995A500F9AACDF8BF&compId=TLE42764.pdf?ci_sign=630c4e85cd0b963d269fd0b6779c2d5202f2f373 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: PG-TO263-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 4.5...41V
Tolerance: ±2%
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35+2.06 EUR
37+1.97 EUR
41+1.77 EUR
43+1.67 EUR
50+1.62 EUR
Mindestbestellmenge: 35
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IPN50R800CEATMA1 IPN50R800CEATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA5E1D6F7216143&compId=IPN50R800CE.pdf?ci_sign=accad286030e42619725ab62412467d686624c67 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of channel: enhancement
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93+0.77 EUR
117+0.61 EUR
126+0.57 EUR
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IPN50R950CEATMA1 IPN50R950CEATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA5E631A6348143&compId=IPN50R950CE.pdf?ci_sign=ac3de499a9fd2d8fc1a237d5338cae3102b6188d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.2A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.2A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhancement
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160+0.45 EUR
177+0.4 EUR
200+0.36 EUR
500+0.32 EUR
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TLF80511TFV50ATMA1 TLF80511TFV50ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE44A76C40F8259&compId=TLF80511TF.pdf?ci_sign=ecd3e1499f0b989509bd5cb6445a5f7cfe6a9c9c Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 3.3...40V
auf Bestellung 191 Stücke:
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47+1.53 EUR
65+1.12 EUR
76+0.94 EUR
80+0.9 EUR
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BSZ0506NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E0C9155E0211C&compId=BSZ0506NS-DTE.pdf?ci_sign=732a43a878218d794f7544f1ee6aa17909633f10 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 4.4mΩ
Drain current: 40A
Power dissipation: 27W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Produkt ist nicht verfügbar
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IPD50R520CPATMA1 IPD50R520CPATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE4422384511CC&compId=IPD50R520CP-DTE.pdf?ci_sign=59719c11dbc24ff54e5674dee8b83eaaebfc9d7f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.52Ω
Drain current: 7.1A
Power dissipation: 66W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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BSC0501NSIATMA1 BSC0501NSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2F74B50B0811C&compId=BSC0501NSI-DTE.pdf?ci_sign=3e21b3e46ed68d71901e7df3c9e2d2453ebc58d4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.9mΩ
Drain current: 100A
Power dissipation: 50W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Produkt ist nicht verfügbar
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BSC0503NSIATMA1 BSC0503NSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2F97603E5E11C&compId=BSC0503NSI-DTE.pdf?ci_sign=a6a74026fb5f694d37118891f31071200b7efebf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.9mΩ
Drain current: 100A
Power dissipation: 50W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Produkt ist nicht verfügbar
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BSC0504NSIATMA1 BSC0504NSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2FB14F6AEA11C&compId=BSC0504NSI-DTE.pdf?ci_sign=d63935e40a03d855fe2b4edfdc5a882564f66b04 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 30W
Drain current: 64A
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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BSZ0502NSIATMA1 INFINEON TECHNOLOGIES Infineon-BSZ0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe57d2cf66d3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Produkt ist nicht verfügbar
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BTS500101TAEATMA1
+1
 		BTS500101TAEATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE995D9856FE6F5F8BF&compId=BTS500101TAE.pdf?ci_sign=5d0a2bebb22f6dcba9d96688de2a190e13c6a6f8 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 40A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Output current: 40A
Case: PG-TO263-7-10
Mounting: SMD
Technology: Power PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
On-state resistance: 1.6mΩ
Number of channels: 1
Supply voltage: 8...18V DC
Produkt ist nicht verfügbar
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IPB50R140CPATMA1 IPB50R140CPATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE21DE817C51CC&compId=IPB50R140CP-DTE.pdf?ci_sign=45627403317b96047f4f657018cd9396a8da34fd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.14Ω
Drain current: 3.1A
Power dissipation: 25W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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IPB50R199CPATMA1 IPB50R199CPATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE2013C528B1CC&compId=IPB50R199CP-DTE.pdf?ci_sign=39a3387fe3500f1534847defb15501961bc6e9ed Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.199Ω
Drain current: 17A
Power dissipation: 139W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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IPB50R299CPATMA1 IPB50R299CPATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE16838A8D31CC&compId=IPB50R299CP-DTE.pdf?ci_sign=21774922362582fa75c1396f564c139c0e9df58f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 104W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.299Ω
Drain current: 12A
Power dissipation: 104W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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BCW60BE6327 BCW60BE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5401881EE2469&compId=BCW60.pdf?ci_sign=d99b80daca59c88194d51478d004c1281c00cc49 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1301 Stücke:
Lieferzeit 14-21 Tag (e)
1301+0.054 EUR
Mindestbestellmenge: 1301
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CY7C1440KV33-250BZXI Infineon-CY7C1440KV33_CY7C1442KV33_CY7C1440KVE33_36-Mbit_(1_M_36_2_M_18)_Pipelined_Sync_SRAM_(With_ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecee95a4967&utm_source=cypress&utm_medium=referral&utm_campaign=20211
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; -40÷85°C
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Frequency: 250MHz
Kind of package: in-tray
Case: FBGA165
Produkt ist nicht verfügbar
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CY7C1480BV33-250BZI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 250MHz
Kind of package: in-tray
Case: FBGA165
Produkt ist nicht verfügbar
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IPA60R125P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D3ADBD8771BF&compId=IPA60R125P6-DTE.pdf?ci_sign=509a3cf4af1c085ef703fbfb7483c4f16578c9d6
IPA60R125P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB123N10N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BADF5E3B00A11C&compId=IPB123N10N3G-DTE.pdf?ci_sign=18749469d85cdd8fcc825ad705ac3b9f22b73cd7
IPB123N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Power dissipation: 94W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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AIHD04N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA427AB6E31820&compId=AIHD04N60R.pdf?ci_sign=dcd0fb202ad805a55910c32a432f29f8924ef561
AIHD04N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Case: DPAK
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: SMD
Technology: TRENCHSTOP™ RC
Turn-on time: 22ns
Gate charge: 27nC
Turn-off time: 317ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Power dissipation: 75W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Produkt ist nicht verfügbar
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AIHD04N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA47033238F820&compId=AIHD04N60RF.pdf?ci_sign=50811ec2801f1a9e015cf51dff02af3193b8f3d1
AIHD04N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Case: DPAK
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: SMD
Technology: TRENCHSTOP™
Turn-on time: 19ns
Gate charge: 27nC
Turn-off time: 153ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Power dissipation: 75W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IPD068N10N3GATMA1 Infineon-IPD068N10N3G-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1eb7aeb615d1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 90A; 150W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 150W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Gate charge: 51nC
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.27 EUR
Mindestbestellmenge: 2500
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BCR112 pVersion=0046&contRep=ZT&docId=E1C047218843DAF1A6F5005056AB5A8F&compId=bcr112series.pdf?ci_sign=d5bf832fad7f3133f513aabca068cb74703f607c
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Produkt ist nicht verfügbar
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IPD65R250E6XTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8D36BB609B1BF&compId=IPD65R250E6-DTE.pdf?ci_sign=1e26743aef67611033c5d4bb27513635a50357d7
IPD65R250E6XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.25Ω
Drain current: 16.1A
Gate-source voltage: ±20V
Power dissipation: 208W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSP603S2L pVersion=0046&contRep=ZT&docId=005056AB752F1EE5949351EA6CD16469&compId=BSP603S2L.pdf?ci_sign=f8f722eb04392bc5053d8ee981b89e1032944b05
BSP603S2L
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.2A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC027N06LS5ATMA1 Infineon-BSC027N06LS5-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101596e1c881234d6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 84A; Idm: 400A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Pulsed drain current: 400A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS®
Produkt ist nicht verfügbar
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TLE4268GXUMA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED783FA94C5CA18E259&compId=TLE4268G.pdf?ci_sign=206b89d3d44db8a7ad9e5b1d89050884c81d51d0
TLE4268GXUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-DSO-20
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.15A
Voltage drop: 0.25V
Output voltage: 5V
Input voltage: 5.5...45V
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.8 EUR
44+1.63 EUR
48+1.52 EUR
100+1.4 EUR
250+1.29 EUR
Mindestbestellmenge: 40
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ESD230B1W0201E6327XTSA1 Infineon-ESD230-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c031740b5934
Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 56W; 6.1V; 3A; bidirectional; 0201,0603; Ch: 1; -55÷125°C
Type of diode: TVS
Peak pulse power dissipation: 56W
Max. off-state voltage: 5.5V
Breakdown voltage: 6.1V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: 0201; 0603
Mounting: SMD
Leakage current: 0.1µA
Application: general purpose
Number of channels: 1
Operating temperature: -55...125°C
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.033 EUR
Mindestbestellmenge: 15000
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BAT68E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E053C1DBDA0469&compId=BAT6804E6327HTSA1.pdf?ci_sign=48c3ec698637286826c432ea3d7330d5dff54f64
BAT68E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 8V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Power dissipation: 0.15W
auf Bestellung 2733 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
368+0.19 EUR
421+0.17 EUR
500+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 313
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BAT165E6327HTSA1 BAT165E6327HTSA1.pdf
BAT165E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.75A
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD323
Max. forward voltage: 0.74V
Load current: 0.75A
Max. off-state voltage: 40V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BAT6804E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E053C1DBDA0469&compId=BAT6804E6327HTSA1.pdf?ci_sign=48c3ec698637286826c432ea3d7330d5dff54f64
BAT6804E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 8V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: double series
Max. forward voltage: 0.5V
Power dissipation: 0.15W
auf Bestellung 5175 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
272+0.26 EUR
311+0.23 EUR
Mindestbestellmenge: 218
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BCR533E6327HTSA1 bcr533.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a3730114407da25d030a
BCR533E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
410+0.17 EUR
537+0.13 EUR
588+0.12 EUR
668+0.11 EUR
1000+0.087 EUR
Mindestbestellmenge: 358
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BCR583E6327HTSA1 bcr583.pdf_folderid=db3a30431428a373011440769fd70304&fileid=db3a30431428a3730114408538a1030f.pdf bcr583.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114408538a1030f
BCR583E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
770+0.093 EUR
861+0.083 EUR
932+0.077 EUR
981+0.073 EUR
1073+0.067 EUR
Mindestbestellmenge: 455
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BAT5405E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16
BAT5405E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT23
Mounting: SMD
Type of diode: Schottky switching
Load current: 0.2A
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Semiconductor structure: common cathode; double
Max. off-state voltage: 30V
auf Bestellung 4547 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
642+0.11 EUR
705+0.1 EUR
900+0.08 EUR
991+0.072 EUR
1011+0.071 EUR
Mindestbestellmenge: 455
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BCR401UE6327HTSA1 dgdl?fileId=5546d4624b0b249c014b6e645ed42f3d
BCR401UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 60mA
Number of channels: 1
Mounting: SMD
Operating voltage: 1.4...40V DC
auf Bestellung 5450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
199+0.36 EUR
223+0.32 EUR
256+0.28 EUR
264+0.27 EUR
Mindestbestellmenge: 162
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BSP372NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A752039388310B&compId=BSP372NH6327XTSA1.pdf?ci_sign=a6d7ddd6c52e49955daaad2485cc68445ea0abcb
BSP372NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 851 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.12 EUR
95+0.75 EUR
186+0.38 EUR
197+0.36 EUR
Mindestbestellmenge: 65
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CY8C28452-24PVXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CY8C28452-24PVXIT
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+9.94 EUR
Mindestbestellmenge: 1000
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IDW100E60FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA2820D32932469&compId=IDW100E60FKSA1.pdf?ci_sign=270dfcfc56663cc33471054f1c8a3589c99f451d
IDW100E60FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO247-3
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.89 EUR
33+2.19 EUR
35+2.06 EUR
60+1.99 EUR
Mindestbestellmenge: 19
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IAUC60N04S6L030HATMA1 Infineon-IAUC60N04S6L030H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309120315fef
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Mounting: SMD
Case: PG-TDSON-8
Technology: OptiMOS™ 6
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 35nC
On-state resistance: 4.2mΩ
Gate-source voltage: ±16V
Drain current: 22A
Drain-source voltage: 40V
Power dissipation: 75W
Pulsed drain current: 311A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6L039ATMA1 Infineon-IAUC60N04S6L039-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c511cb70df6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 54A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6L045HATMA1 Infineon-IAUC60N04S6L045H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753091111b5fec
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 18A; Idm: 193A; 52W
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Gate-source voltage: ±16V
Gate charge: 19nC
On-state resistance: 6mΩ
Power dissipation: 52W
Drain current: 18A
Drain-source voltage: 40V
Pulsed drain current: 193A
Polarisation: unipolar
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6N031HATMA1 Infineon-IAUC60N04S6N031H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309103dd5fe9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Mounting: SMD
Case: PG-TDSON-8
Technology: OptiMOS™ 6
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 3.6mΩ
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 40V
Power dissipation: 75W
Pulsed drain current: 311A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6N044ATMA1 Infineon-IAUC60N04S6N044-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c8843d110a5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 50A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6N050HATMA1 Infineon-IAUC60N04S6N050H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753090f4715fe6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Pulsed drain current: 171A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA600N25NM3SXKSA1 Infineon-IPA600N25NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5d19624b6e3d
IPA600N25NM3SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S25FL064LABNFV040 INFN-S-A0017271261-1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP027N08N5AKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAFCABC5B6C11C&compId=IPP027N08N5-DTE.pdf?ci_sign=d638ad1442dc6e4a6a31df125f3b8d30b1be77b3
IPP027N08N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC027N04LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C28C362FDB011C&compId=BSC027N04LSG-DTE.pdf?ci_sign=b4036c8c678d896af86300efb48f1e355064edf4
BSC027N04LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC027N10NM6ATMA1 Infineon-ISC027N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017babb690f45f94
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+2.86 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BSC027N10NS5ATMA1 BSC027N10NS5_Rev2.0_2018-02-28.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+3.68 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IKP30N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BDACF6933851BF&compId=IKP30N65H5-DTE.pdf?ci_sign=2782473722d787c91839e4ac87cde0214d604f30
IKP30N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 36A; 188W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 36A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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BTS3110N pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB927E883E4469&compId=BTS3110N.pdf?ci_sign=d007588d32954c0a1e0c330620de85b0f1dd61ef
BTS3110N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: N-Channel
Case: PG-SOT223-4
Type of integrated circuit: power switch
Operating temperature: -40...150°C
Turn-on time: 45µs
Turn-off time: 60µs
On-state resistance: 0.2Ω
Number of channels: 1
Output current: 1.4A
Output voltage: 42V
Technology: HITFET®; SIPMOS™
auf Bestellung 2119 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.96 EUR
38+1.9 EUR
59+1.22 EUR
63+1.14 EUR
500+1.12 EUR
Mindestbestellmenge: 25
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2EDL23I06PJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD85B5CF77038BF&compId=2EDL23x06xx.pdf?ci_sign=b1ad70b6d943ae40ef982d8b7da102dac65c5aea
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-14
Output current: -2.5...1.8A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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CY7C4122KV13-106FCXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 1066MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY2308SXC-2 Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CY2308SXC-2
auf Bestellung 868 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+13.07 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
BSC018N04LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A1D665F78576611C&compId=BSC018N04LSG-DTE.pdf?ci_sign=a448f615d48397db4a1ff62d882c665a5be96e9f
BSC018N04LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD028N06NF2SATMA1 Infineon-IPD028N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8386267f0183a84489a82df3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 60V; 139A; 150W; DPAK; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 139A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 2.85mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Technology: SiC
Electrical mounting: SMT
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.94 EUR
Mindestbestellmenge: 2000
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IPD038N06NF2SATMA1 Infineon-IPD038N06NF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8386267f0183ad6c7fb66010
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 60V; 120A; 107W; DPAK; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 107W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 3.85mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Technology: SiC
Electrical mounting: SMT
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.56 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
IKA08N65F5XKSA1 DS_IKA08N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af92196985c58
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+2.04 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
BSZ123N08NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E449F0943811C&compId=BSZ123N08NS3G-DTE.pdf?ci_sign=3c3f5976f273d1c142310ae9d70a9357326ae452
BSZ123N08NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 66W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE42764GV50ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A500F9AACDF8BF&compId=TLE42764.pdf?ci_sign=630c4e85cd0b963d269fd0b6779c2d5202f2f373
TLE42764GV50ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: PG-TO263-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 4.5...41V
Tolerance: ±2%
auf Bestellung 995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.06 EUR
37+1.97 EUR
41+1.77 EUR
43+1.67 EUR
50+1.62 EUR
Mindestbestellmenge: 35
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IPN50R800CEATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA5E1D6F7216143&compId=IPN50R800CE.pdf?ci_sign=accad286030e42619725ab62412467d686624c67
IPN50R800CEATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of channel: enhancement
auf Bestellung 2896 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
117+0.61 EUR
126+0.57 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
IPN50R950CEATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA5E631A6348143&compId=IPN50R950CE.pdf?ci_sign=ac3de499a9fd2d8fc1a237d5338cae3102b6188d
IPN50R950CEATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.2A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.2A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhancement
auf Bestellung 2299 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
160+0.45 EUR
177+0.4 EUR
200+0.36 EUR
500+0.32 EUR
Mindestbestellmenge: 160
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TLF80511TFV50ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE44A76C40F8259&compId=TLF80511TF.pdf?ci_sign=ecd3e1499f0b989509bd5cb6445a5f7cfe6a9c9c
TLF80511TFV50ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 3.3...40V
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.53 EUR
65+1.12 EUR
76+0.94 EUR
80+0.9 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
BSZ0506NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E0C9155E0211C&compId=BSZ0506NS-DTE.pdf?ci_sign=732a43a878218d794f7544f1ee6aa17909633f10
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 4.4mΩ
Drain current: 40A
Power dissipation: 27W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R520CPATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE4422384511CC&compId=IPD50R520CP-DTE.pdf?ci_sign=59719c11dbc24ff54e5674dee8b83eaaebfc9d7f
IPD50R520CPATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.52Ω
Drain current: 7.1A
Power dissipation: 66W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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BSC0501NSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2F74B50B0811C&compId=BSC0501NSI-DTE.pdf?ci_sign=3e21b3e46ed68d71901e7df3c9e2d2453ebc58d4
BSC0501NSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.9mΩ
Drain current: 100A
Power dissipation: 50W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC0503NSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2F97603E5E11C&compId=BSC0503NSI-DTE.pdf?ci_sign=a6a74026fb5f694d37118891f31071200b7efebf
BSC0503NSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.9mΩ
Drain current: 100A
Power dissipation: 50W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC0504NSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2FB14F6AEA11C&compId=BSC0504NSI-DTE.pdf?ci_sign=d63935e40a03d855fe2b4edfdc5a882564f66b04
BSC0504NSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 30W
Drain current: 64A
Case: PG-TDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ0502NSIATMA1 Infineon-BSZ0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe57d2cf66d3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Produkt ist nicht verfügbar
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BTS500101TAEATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995D9856FE6F5F8BF&compId=BTS500101TAE.pdf?ci_sign=5d0a2bebb22f6dcba9d96688de2a190e13c6a6f8
BTS500101TAEATMA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 40A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Output current: 40A
Case: PG-TO263-7-10
Mounting: SMD
Technology: Power PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
On-state resistance: 1.6mΩ
Number of channels: 1
Supply voltage: 8...18V DC
Produkt ist nicht verfügbar
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IPB50R140CPATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE21DE817C51CC&compId=IPB50R140CP-DTE.pdf?ci_sign=45627403317b96047f4f657018cd9396a8da34fd
IPB50R140CPATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.14Ω
Drain current: 3.1A
Power dissipation: 25W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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IPB50R199CPATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE2013C528B1CC&compId=IPB50R199CP-DTE.pdf?ci_sign=39a3387fe3500f1534847defb15501961bc6e9ed
IPB50R199CPATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.199Ω
Drain current: 17A
Power dissipation: 139W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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IPB50R299CPATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE16838A8D31CC&compId=IPB50R299CP-DTE.pdf?ci_sign=21774922362582fa75c1396f564c139c0e9df58f
IPB50R299CPATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 104W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.299Ω
Drain current: 12A
Power dissipation: 104W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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BCW60BE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5401881EE2469&compId=BCW60.pdf?ci_sign=d99b80daca59c88194d51478d004c1281c00cc49
BCW60BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1301 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1301+0.054 EUR
Mindestbestellmenge: 1301
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