Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149672) > Seite 2486 nach 2495
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S28HS512TGABHB010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: octal Operating frequency: 200MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Application: automotive |
Produkt ist nicht verfügbar |
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S28HS512TGABHI013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: octal Operating frequency: 200MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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S28HS512TGABHM010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: octal Operating frequency: 200MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray Application: automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S28HS512TGABHM013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: octal Operating frequency: 200MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Application: automotive |
Produkt ist nicht verfügbar |
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TLD5098ELXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 22500 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC093N04LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Power dissipation: 35W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 9.3mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 3751 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC0902NSIATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 89A Power dissipation: 48W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 4596 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC0909NSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 34V Drain current: 44A Power dissipation: 27W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 9.2mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 423 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC097N06NSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 46A; 36W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 46A Power dissipation: 36W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 9.7mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRFB38N20DPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 44A Power dissipation: 320W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 54mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 345 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB039N10N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 160A Power dissipation: 214W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
STT1400N16P55XPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; opposing; 1.6kV; 1.4kA; BG-PS55-1; Ufmax: 1.39V Type of module: thyristor Semiconductor structure: opposing Max. off-state voltage: 1.6kV Load current: 1.4kA Case: BG-PS55-1 Max. forward voltage: 1.39V Max. forward impulse current: 9kA Gate current: 200mA Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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2ED21824S06JXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2 Type of integrated circuit: driver Number of channels: 2 Integrated circuit features: integrated bootstrap functionality Kind of package: reel; tape Protection: undervoltage UVP Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Voltage class: 650V Mounting: SMD Case: PG-DSO-14 Supply voltage: 10...20V Output current: -2.5...2.5A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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2ED2182S06FXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2 Supply voltage: 10...20V Output current: -2.5...2.5A Type of integrated circuit: driver Number of channels: 2 Integrated circuit features: integrated bootstrap functionality Kind of package: reel; tape Protection: undervoltage UVP Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Voltage class: 650V Mounting: SMD Case: PG-DSO-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
2ED21834S06JXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2 Supply voltage: 10...20V Output current: -2.5...2.5A Type of integrated circuit: driver Number of channels: 2 Integrated circuit features: integrated bootstrap functionality Kind of package: reel; tape Protection: undervoltage UVP Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Voltage class: 650V Mounting: SMD Case: PG-DSO-14 |
Produkt ist nicht verfügbar |
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BSP61H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.5W; SOT223 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1.5W Case: SOT223 Mounting: SMD Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
SPW16N50C3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 521 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL1404STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Power dissipation: 3.8W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRL1404ZSTRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 130A Pulsed drain current: 790A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 110nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IR2213SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16 Type of integrated circuit: driver Operating temperature: -40...125°C Case: SO16 Power: 1.25W Supply voltage: 12...20V DC Turn-on time: 280ns Turn-off time: 225ns Output current: -2...1.7A Number of channels: 2 Kind of package: tube Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IR2213STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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CY7C1062GE30-10BGXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 512kx32bit Access time: 10ns Case: PBGA119 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1062G30-10BGXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 512kx32bit Access time: 10ns Case: PBGA119 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1062G30-10BGXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 512kx32bit Access time: 10ns Case: PBGA119 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1062GE30-10BGXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 512kx32bit Access time: 10ns Case: PBGA119 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14B064PA-SFXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC16; -40÷85°C; serial; tube Memory: 64kb SRAM Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Kind of interface: serial Frequency: 40MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 8kx8bit Kind of package: tube Case: SOIC16 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14B101I-SFXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial Memory: 1Mb SRAM Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Kind of interface: serial Frequency: 3.4MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 128kx8bit Kind of package: reel; tape Case: SOIC16 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14B101J2-SXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; tube Memory: 1Mb SRAM Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Kind of interface: serial Frequency: 3.4MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 128kx8bit Kind of package: tube Case: SOIC8 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14B101J2-SXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial Memory: 1Mb SRAM Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Kind of interface: serial Frequency: 3.4MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 128kx8bit Kind of package: reel; tape Case: SOIC8 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14B101PA-SFXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial Memory: 1Mb SRAM Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Kind of interface: serial Frequency: 40MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 128kx8bit Kind of package: reel; tape Case: SOIC16 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14B101Q2-LHXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; DFN8; -40÷85°C; serial; 40MHz Memory: 1Mb SRAM Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Kind of interface: serial Frequency: 40MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 128kx8bit Kind of package: in-tray Case: DFN8 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14B101Q2-LHXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; DFN8; -40÷85°C; serial; 40MHz Memory: 1Mb SRAM Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Kind of interface: serial Frequency: 40MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 128kx8bit Kind of package: reel; tape Case: DFN8 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14B101Q2A-SXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; tube Memory: 1Mb SRAM Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Kind of interface: serial Frequency: 40MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 128kx8bit Kind of package: tube Case: SOIC8 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14B101Q2A-SXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; 40MHz Memory: 1Mb SRAM Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Kind of interface: serial Frequency: 40MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 128kx8bit Kind of package: reel; tape Case: SOIC8 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14B256PA-SFXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC16; -40÷85°C; serial Memory: 256kb SRAM Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Kind of interface: serial Frequency: 40MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 32kx8bit Kind of package: tube Case: SOIC16 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14B512Q2A-SXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 512kbSRAM; 64kx8bit; SOIC8; -40÷85°C; serial Memory: 512kb SRAM Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Kind of interface: serial Frequency: 40MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 64kx8bit Kind of package: reel; tape Case: SOIC8 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14E101J2-SXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; tube Memory: 1Mb SRAM Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of interface: serial Frequency: 3.4MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 128kx8bit Kind of package: tube Case: SOIC8 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14E256Q5A-SXQ | INFINEON TECHNOLOGIES |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC8; -40÷105°C; serial Memory: 256kb SRAM Operating temperature: -40...105°C Supply voltage: 4.5...5.5V DC Kind of interface: serial Frequency: 40MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 32kx8bit Kind of package: tube Case: SOIC8 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14V101Q3-SFXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial; tube Memory: 1Mb SRAM Operating temperature: -40...85°C Supply voltage: 1.65...1.95V DC; 3...3.6V DC Kind of interface: serial Frequency: 30MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 128kx8bit Kind of package: tube Case: SOIC16 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14V101QS-BK108XI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial Memory: 1Mb SRAM Operating temperature: -40...85°C Supply voltage: 1.71...2V DC; 2.7...3.6V DC Kind of interface: serial Frequency: 108MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 128kx8bit Kind of package: in-tray Case: FBGA24 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14V101QS-SE108XI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial; tube Memory: 1Mb SRAM Operating temperature: -40...85°C Supply voltage: 1.71...2V DC; 2.7...3.6V DC Kind of interface: serial Frequency: 108MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 128kx8bit Kind of package: tube Case: SOIC16 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14V101QS-BK108XIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial Memory: 1Mb SRAM Operating temperature: -40...85°C Supply voltage: 1.71...2V DC; 2.7...3.6V DC Kind of interface: serial Frequency: 108MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 128kx8bit Kind of package: reel; tape Case: FBGA24 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14V101QS-SE108XIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial Memory: 1Mb SRAM Operating temperature: -40...85°C Supply voltage: 1.71...2V DC; 2.7...3.6V DC Kind of interface: serial Frequency: 108MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 128kx8bit Kind of package: reel; tape Case: SOIC16 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BSZ018NE2LSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8 Drain-source voltage: 25V Drain current: 40A On-state resistance: 1.8mΩ Type of transistor: N-MOSFET Power dissipation: 69W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-TSDSON-8 |
auf Bestellung 4971 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9952TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8 Drain-source voltage: 30/-30V Drain current: 3.5/-2.3A On-state resistance: 0.1/0.25Ω Type of transistor: N/P-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±30V Mounting: SMD Case: SO8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSF030NE2LQXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 75A; 28W Mounting: SMD Drain-source voltage: 25V Drain current: 75A On-state resistance: 3mΩ Type of transistor: N-MOSFET Power dissipation: 28W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±25V Case: CanPAK™ SQ; MG-WDSON-2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRS2304STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 127500 Stücke: Lieferzeit 14-21 Tag (e) |
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IDK10G120C5XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 10A; 165W Semiconductor structure: single diode Max. off-state voltage: 1.2kV Case: PG-TO263-2 Max. forward impulse current: 84A Leakage current: 22µA Power dissipation: 165W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: SMD Max. forward voltage: 2V Load current: 10A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IDK10G65C5 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 10A; 89W Semiconductor structure: single diode Max. off-state voltage: 650V Case: PG-TO263-2 Max. forward impulse current: 71A Leakage current: 2µA Power dissipation: 89W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: SMD Max. forward voltage: 1.8V Load current: 10A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BSC112N06LDATMA1 | INFINEON TECHNOLOGIES |
![]() Description: BSC112N06LDATMA1 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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FP50R06W2E3B11BOMA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Power dissipation: 175W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 2B Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Case: AG-EASY2B-2 Max. off-state voltage: 0.6kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FP25R12W1T7B11BPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 1B Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Case: AG-EASY1B-2 Max. off-state voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IFF600B12ME4PB11BPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 600A Pulsed collector current: 1.2kA Application: for UPS; Inverter; motors; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Technology: EconoDUAL™ 3 Topology: IGBT half-bridge; NTC thermistor Case: AG-ECONOD-6 Max. off-state voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IFF450B12ME4PB11BPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor/transistor; IGBT half-bridge,NTC thermistor; screw Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Application: for UPS; Inverter; motors; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Technology: EconoDUAL™ 3 Topology: IGBT half-bridge; NTC thermistor Type of semiconductor module: IGBT Case: AG-ECONOD-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FF900R12ME7PB11BPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT Type of module: IGBT |
auf Bestellung 162 Stücke: Lieferzeit 14-21 Tag (e) |
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FS35R12W1T4B11BOMA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT Type of module: IGBT |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC039N06NS | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFHS9301TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 2.1W; PQFN2X2 Type of transistor: P-MOSFET Power dissipation: 2.1W Polarisation: unipolar Case: PQFN2X2 Kind of package: reel Mounting: SMD Technology: HEXFET® Kind of channel: enhancement Drain-source voltage: -30V Drain current: -6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ISP752R | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.15Ω Supply voltage: 6...52V DC Technology: Industrial PROFET |
auf Bestellung 2704 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP752T | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.15Ω Technology: Classic PROFET Output voltage: 52V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
S28HS512TGABHB010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: octal
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: octal
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S28HS512TGABHI013 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: octal
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: octal
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S28HS512TGABHM010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: octal
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: octal
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S28HS512TGABHM013 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: octal
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: octal
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLD5098ELXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 22500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 2.50 EUR |
BSC093N04LSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3751 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
72+ | 1.00 EUR |
128+ | 0.56 EUR |
136+ | 0.53 EUR |
500+ | 0.51 EUR |
BSC0902NSIATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 4596 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
48+ | 1.50 EUR |
74+ | 0.98 EUR |
95+ | 0.76 EUR |
100+ | 0.72 EUR |
101+ | 0.71 EUR |
250+ | 0.69 EUR |
BSC0909NSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 44A
Power dissipation: 27W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 44A
Power dissipation: 27W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 423 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
97+ | 0.74 EUR |
142+ | 0.51 EUR |
227+ | 0.32 EUR |
240+ | 0.30 EUR |
BSC097N06NSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 46A; 36W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 46A
Power dissipation: 36W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 46A; 36W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 46A
Power dissipation: 36W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFB38N20DPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 345 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.56 EUR |
49+ | 1.47 EUR |
52+ | 1.40 EUR |
IPB039N10N3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STT1400N16P55XPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 1.4kA; BG-PS55-1; Ufmax: 1.39V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.6kV
Load current: 1.4kA
Case: BG-PS55-1
Max. forward voltage: 1.39V
Max. forward impulse current: 9kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 1.4kA; BG-PS55-1; Ufmax: 1.39V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.6kV
Load current: 1.4kA
Case: BG-PS55-1
Max. forward voltage: 1.39V
Max. forward impulse current: 9kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2ED21824S06JXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-14
Supply voltage: 10...20V
Output current: -2.5...2.5A
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-14
Supply voltage: 10...20V
Output current: -2.5...2.5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2ED2182S06FXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-8
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2ED21834S06JXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-14
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-14
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP61H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SPW16N50C3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 521 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
60+ | 2.00 EUR |
IRL1404STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRL1404ZSTRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 790A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 790A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2213SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: SO16
Power: 1.25W
Supply voltage: 12...20V DC
Turn-on time: 280ns
Turn-off time: 225ns
Output current: -2...1.7A
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: SO16
Power: 1.25W
Supply voltage: 12...20V DC
Turn-on time: 280ns
Turn-off time: 225ns
Output current: -2...1.7A
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
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IR2213STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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1000+ | 5.96 EUR |
CY7C1062GE30-10BGXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
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CY7C1062G30-10BGXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
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CY7C1062G30-10BGXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1062GE30-10BGXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B064PA-SFXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC16; -40÷85°C; serial; tube
Memory: 64kb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 8kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC16; -40÷85°C; serial; tube
Memory: 64kb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 8kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
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CY14B101I-SFXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 3.4MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC16
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 3.4MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B101J2-SXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 3.4MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC8
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 3.4MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B101J2-SXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 3.4MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC8
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 3.4MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B101PA-SFXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC16
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B101Q2-LHXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; DFN8; -40÷85°C; serial; 40MHz
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: in-tray
Case: DFN8
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; DFN8; -40÷85°C; serial; 40MHz
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: in-tray
Case: DFN8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B101Q2-LHXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; DFN8; -40÷85°C; serial; 40MHz
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: DFN8
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; DFN8; -40÷85°C; serial; 40MHz
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: DFN8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B101Q2A-SXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC8
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B101Q2A-SXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; 40MHz
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC8
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; 40MHz
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B256PA-SFXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC16; -40÷85°C; serial
Memory: 256kb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 32kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC16; -40÷85°C; serial
Memory: 256kb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 32kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B512Q2A-SXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 512kbSRAM; 64kx8bit; SOIC8; -40÷85°C; serial
Memory: 512kb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 64kx8bit
Kind of package: reel; tape
Case: SOIC8
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 512kbSRAM; 64kx8bit; SOIC8; -40÷85°C; serial
Memory: 512kb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 64kx8bit
Kind of package: reel; tape
Case: SOIC8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14E101J2-SXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of interface: serial
Frequency: 3.4MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC8
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of interface: serial
Frequency: 3.4MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14E256Q5A-SXQ |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC8; -40÷105°C; serial
Memory: 256kb SRAM
Operating temperature: -40...105°C
Supply voltage: 4.5...5.5V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 32kx8bit
Kind of package: tube
Case: SOIC8
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC8; -40÷105°C; serial
Memory: 256kb SRAM
Operating temperature: -40...105°C
Supply voltage: 4.5...5.5V DC
Kind of interface: serial
Frequency: 40MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 32kx8bit
Kind of package: tube
Case: SOIC8
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14V101Q3-SFXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.65...1.95V DC; 3...3.6V DC
Kind of interface: serial
Frequency: 30MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.65...1.95V DC; 3...3.6V DC
Kind of interface: serial
Frequency: 30MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14V101QS-BK108XI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: in-tray
Case: FBGA24
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: in-tray
Case: FBGA24
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14V101QS-SE108XI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial; tube
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Case: SOIC16
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14V101QS-BK108XIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: FBGA24
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: FBGA24
Mounting: SMD
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CY14V101QS-SE108XIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC16
Mounting: SMD
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Kind of interface: serial
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Case: SOIC16
Mounting: SMD
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BSZ018NE2LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Drain-source voltage: 25V
Drain current: 40A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Drain-source voltage: 25V
Drain current: 40A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
auf Bestellung 4971 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
77+ | 0.93 EUR |
81+ | 0.89 EUR |
100+ | 0.86 EUR |
IRF9952TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Drain-source voltage: 30/-30V
Drain current: 3.5/-2.3A
On-state resistance: 0.1/0.25Ω
Type of transistor: N/P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: SMD
Case: SO8
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Drain-source voltage: 30/-30V
Drain current: 3.5/-2.3A
On-state resistance: 0.1/0.25Ω
Type of transistor: N/P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
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BSF030NE2LQXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 75A; 28W
Mounting: SMD
Drain-source voltage: 25V
Drain current: 75A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: CanPAK™ SQ; MG-WDSON-2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 75A; 28W
Mounting: SMD
Drain-source voltage: 25V
Drain current: 75A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±25V
Case: CanPAK™ SQ; MG-WDSON-2
Produkt ist nicht verfügbar
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IRS2304STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 127500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.41 EUR |
IDK10G120C5XTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 10A; 165W
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Case: PG-TO263-2
Max. forward impulse current: 84A
Leakage current: 22µA
Power dissipation: 165W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. forward voltage: 2V
Load current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 10A; 165W
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Case: PG-TO263-2
Max. forward impulse current: 84A
Leakage current: 22µA
Power dissipation: 165W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. forward voltage: 2V
Load current: 10A
Produkt ist nicht verfügbar
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IDK10G65C5 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 10A; 89W
Semiconductor structure: single diode
Max. off-state voltage: 650V
Case: PG-TO263-2
Max. forward impulse current: 71A
Leakage current: 2µA
Power dissipation: 89W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. forward voltage: 1.8V
Load current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 10A; 89W
Semiconductor structure: single diode
Max. off-state voltage: 650V
Case: PG-TO263-2
Max. forward impulse current: 71A
Leakage current: 2µA
Power dissipation: 89W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. forward voltage: 1.8V
Load current: 10A
Produkt ist nicht verfügbar
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BSC112N06LDATMA1 |
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auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.68 EUR |
FP50R06W2E3B11BOMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 2B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY2B-2
Max. off-state voltage: 0.6kV
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 2B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY2B-2
Max. off-state voltage: 0.6kV
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FP25R12W1T7B11BPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-2
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-EASY1B-2
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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IFF600B12ME4PB11BPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Case: AG-ECONOD-6
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Case: AG-ECONOD-6
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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IFF450B12ME4PB11BPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge,NTC thermistor; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-6
Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge,NTC thermistor; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-6
Produkt ist nicht verfügbar
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FF900R12ME7PB11BPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT
Type of module: IGBT
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 316.33 EUR |
FS35R12W1T4B11BOMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT
Type of module: IGBT
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
24+ | 44.84 EUR |
BSC039N06NS |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFHS9301TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 2.1W; PQFN2X2
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Case: PQFN2X2
Kind of package: reel
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -6A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 2.1W; PQFN2X2
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Case: PQFN2X2
Kind of package: reel
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -6A
Produkt ist nicht verfügbar
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ISP752R |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Industrial PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Industrial PROFET
auf Bestellung 2704 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.17 EUR |
37+ | 1.96 EUR |
39+ | 1.84 EUR |
40+ | 1.82 EUR |
41+ | 1.74 EUR |
250+ | 1.70 EUR |
500+ | 1.69 EUR |
BSP752T |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
Produkt ist nicht verfügbar
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