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IDP15E65D2XKSA1 IDP15E65D2XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6FF3B73774469&compId=IDP15E65D2.pdf?ci_sign=8b2271511ce4ce182f4702d6d46a9fe652cd5d1d Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Features of semiconductor devices: fast switching
auf Bestellung 655 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.09 EUR
46+1.57 EUR
73+0.99 EUR
77+0.93 EUR
100+0.92 EUR
250+0.9 EUR
Mindestbestellmenge: 35
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IDP15E65D1XKSA1 IDP15E65D1XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6F60C962A4469&compId=IDP15E65D1.pdf?ci_sign=ab03c6d2d221d5cc668abe5e29a23765e6141f60 Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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BFP183E7764HTSA1 INFINEON TECHNOLOGIES Infineon-BFP183-DS-v01_01-EN.pdf?fileId=5546d462677d0f460167c628925b4907 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 65mA; 250mW; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.25W
Current gain: 70
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.14 EUR
Mindestbestellmenge: 3000
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SGW50N60HS SGW50N60HS INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B455D9BC6EC469&compId=SGW50N60HS.pdf?ci_sign=718c15903ce0d6a5268dc9a1e82eba2162229ae3 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 416W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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1EDI30I12MFXUMA1 1EDI30I12MFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD3DE0A51A198BF&compId=1EDIxxI12MF.pdf?ci_sign=145fb7d90f013347b7813f67d148905823549b4c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Topology: single transistor
Output current: -3...3A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
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1EDI10I12MFXUMA1 1EDI10I12MFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD3DE0A51A198BF&compId=1EDIxxI12MF.pdf?ci_sign=145fb7d90f013347b7813f67d148905823549b4c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Topology: single transistor
Output current: -1...1A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
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1EDI20I12MFXUMA1 1EDI20I12MFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD3DE0A51A198BF&compId=1EDIxxI12MF.pdf?ci_sign=145fb7d90f013347b7813f67d148905823549b4c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Topology: single transistor
Output current: -2...2A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
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IPAN60R280PFD7SXKSA1 IPAN60R280PFD7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAN60R280PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626eab8fbf016ed5c9de013926 Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 7A; Idm: 31A
Mounting: THT
Case: TO220FP
Kind of package: tube
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 24W
Pulsed drain current: 31A
Drain-source voltage: 650V
Technology: CoolMOS™ PFD7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 549mΩ
Produkt ist nicht verfügbar
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IPD60R280PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 7A; Idm: 31A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 549mΩ
Drain current: 7A
Pulsed drain current: 31A
Power dissipation: 51W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
Produkt ist nicht verfügbar
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PVA3054NPBF INFINEON TECHNOLOGIES pva30n.pdf?fileId=5546d462533600a4015356839c762923 Category: One Phase Solid State Relays
Description: Relay: solid state; Ucntrl: 1.2VDC; 25mA; PVA; THT; DIP8; -40÷85°C
Type of relay: solid state
Control voltage: 1.2V DC
Control current max.: 25mA
Manufacturer series: PVA
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Insulation voltage: 4kV
auf Bestellung 1900 Stücke:
Lieferzeit 14-21 Tag (e)
50+7.44 EUR
Mindestbestellmenge: 50
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PVA3054NSPBF INFINEON TECHNOLOGIES pva30n.pdf?fileId=5546d462533600a4015356839c762923 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.25VDC; Icntrl max: 25mA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.25V DC
Control current max.: 25mA
Max. operating current: 50mA
Manufacturer series: PVA
Mounting: SMT
Case: SMD8
Operating temperature: -40...85°C
Body dimensions: 9.4x6.5x3.9mm
Leads: Gull Wing
Insulation voltage: 4kV
auf Bestellung 956 Stücke:
Lieferzeit 14-21 Tag (e)
50+8.27 EUR
Mindestbestellmenge: 50
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BSP742T BSP742T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869766A91DFD2469&compId=BSP742T.pdf?ci_sign=e6e8ebf8ffc3284c7138eee105ccea59d6a3f9de Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 800mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.26Ω
Technology: Classic PROFET
Output voltage: 40V
auf Bestellung 1567 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.22 EUR
35+2.09 EUR
50+1.44 EUR
53+1.36 EUR
500+1.3 EUR
Mindestbestellmenge: 23
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BSZ180P03NS3GATMA1 BSZ180P03NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A83237A3D1CC&compId=BSZ180P03NS3GATMA1-DTE.pdf?ci_sign=304a2011c07782bc019c3f0265e7929ef67a4796 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ180P03NS3EGATMA BSZ180P03NS3EGATMA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A7635D7851CC&compId=BSZ180P03NS3EGATMA-DTE.pdf?ci_sign=971d97016924af893a513ca586abb1484fedd47a Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BGS12P2L6E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGS12P2L6-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d4487d53603ce Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Mounting: SMD
Type of integrated circuit: RF switch
Supply voltage: 1.65...3.4V DC
Case: TSLP-6-4
Bandwidth: 0.05...6GHz
Application: telecommunication
Output configuration: SPDT
Produkt ist nicht verfügbar
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BTS72002EPAXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE995D8FCA4AAD1F8BF&compId=BTS72002EPA.pdf?ci_sign=096f92e3b3fc16264538298f581bbf4ced1e5b56 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 0.12Ω
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Turn-on time: 170µs
Turn-off time: 0.15ms
Produkt ist nicht verfügbar
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BTS72002EPCXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE995D8F4E5FCD218BF&compId=BTS72002EPC.pdf?ci_sign=650657063cacfe9a7b8754ecbde50773a4a12541 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 0.12Ω
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Turn-on time: 170µs
Turn-off time: 0.15ms
Produkt ist nicht verfügbar
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BSZ100N06NSATMA1 BSZ100N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E418FECF9E11C&compId=BSZ100N06NS-DTE.pdf?ci_sign=2c2fadeec5f1af9aa66da941965b2afe221347ae Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPA65R190E6XKSA1 IPA65R190E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2CAECCFE3B1BF&compId=IPA65R190E6-DTE.pdf?ci_sign=021fbd4cdff9db126bcf3787abcc493e074c7a0c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 34W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.19Ω
Drain current: 20.2A
Gate-source voltage: ±20V
Power dissipation: 34W
Drain-source voltage: 650V
Kind of package: tube
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.19 EUR
26+2.77 EUR
28+2.63 EUR
Mindestbestellmenge: 18
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BAT6405E6327HTSA1 BAT6405E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Case: SOT23
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Max. off-state voltage: 40V
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
auf Bestellung 1521 Stücke:
Lieferzeit 14-21 Tag (e)
528+0.14 EUR
642+0.11 EUR
685+0.1 EUR
799+0.09 EUR
864+0.083 EUR
1129+0.063 EUR
1194+0.06 EUR
Mindestbestellmenge: 528
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BAT6406E6327HTSA1 BAT6406E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Type of diode: Schottky rectifying
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
auf Bestellung 5779 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
511+0.14 EUR
562+0.13 EUR
787+0.091 EUR
1102+0.065 EUR
1166+0.061 EUR
3000+0.059 EUR
Mindestbestellmenge: 358
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BAT64E6327HTSA1 BAT64E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Type of diode: Schottky rectifying
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: single diode
auf Bestellung 2425 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
345+0.21 EUR
458+0.16 EUR
573+0.12 EUR
708+0.1 EUR
1238+0.058 EUR
1309+0.055 EUR
Mindestbestellmenge: 218
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IRFB7534PBF IRFB7534PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6856A8A3EC1EC&compId=irfs7534pbf.pdf?ci_sign=58374929d2da0655e279f40bd664245c1c9d1a2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 186nC
Trade name: StrongIRFET
auf Bestellung 926 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.49 EUR
34+2.12 EUR
50+1.44 EUR
53+1.36 EUR
100+1.34 EUR
Mindestbestellmenge: 29
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IRFB7734PBF IRFB7734PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8A5DC2D657A469&compId=IRFB7734PBF.pdf?ci_sign=bc7cc28ffb0486c427e821c8b7317f1232fe5615 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 183A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR420U BCR420U INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD61691658B15EA&compId=BCR420U.pdf?ci_sign=0ca17a34f60a3e7fc7f59a90f29534577755f717 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Mounting: SMD
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Number of channels: 1
Topology: single transistor
Integrated circuit features: linear dimming
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
Mindestbestellmenge: 100
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BCR421UE6327 BCR421UE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD618EC6C8DF5EA&compId=BCR421UE6327.pdf?ci_sign=dca36e6257f451c4dcb566801e7a45f24426b061 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Mounting: SMD
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Number of channels: 1
Topology: single transistor
Integrated circuit features: linear dimming; PWM
auf Bestellung 1184 Stücke:
Lieferzeit 14-21 Tag (e)
72+1 EUR
169+0.42 EUR
196+0.37 EUR
209+0.34 EUR
Mindestbestellmenge: 72
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BCR420UE6327HTSA1 BCR420UE6327HTSA1 INFINEON TECHNOLOGIES Infineon-BCR420U-BCR421U-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Integrated circuit features: linear dimming
Topology: single transistor
Type of integrated circuit: driver
Output current: 150...200mA
Kind of integrated circuit: current regulator; LED driver
Number of channels: 1
Operating voltage: 1.4...40V DC
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
179+0.4 EUR
203+0.35 EUR
236+0.3 EUR
305+0.23 EUR
323+0.22 EUR
Mindestbestellmenge: 148
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BCR420UE6433HTMA1 INFINEON TECHNOLOGIES Infineon-BCR420U-BCR421U-DataSheet-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Mounting: SMD
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Number of channels: 1
Topology: single transistor
Integrated circuit features: linear dimming
Produkt ist nicht verfügbar
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BCR421UE6327HTSA1 INFINEON TECHNOLOGIES Infineon-BCR420U-BCR421U-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Mounting: SMD
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Number of channels: 1
Topology: single transistor
Integrated circuit features: linear dimming; PWM
Produkt ist nicht verfügbar
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SAK-TC1797-384F150E INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B44B48D9EF6469&compId=SAK-TC1797-384F150E.pdf?ci_sign=23a456cb26f03936757134008688725281715175 Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC
Mounting: SMD
Interface: I2C; SPI; UART
Supply voltage: 3.5...5V DC
Memory: 3MB FLASH
Case: BGA416
Type of integrated circuit: microcontroller
Produkt ist nicht verfügbar
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BSZ100N06LS3GATMA1 BSZ100N06LS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E3DAAD43E211C&compId=BSZ100N06LS3G-DTE.pdf?ci_sign=4f5c55c03ed9fd06aee860c65e9b034596f8d145 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP100N06S2L05AKSA2 INFINEON TECHNOLOGIES Infineon-IPP_B100N06S2L_05-DS-v01_00-en.pdf?fileId=db3a304412b407950112b4322a685747&ack=t Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
50+3.35 EUR
200+3 EUR
Mindestbestellmenge: 50
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BSC098N10NS5ATMA1 BSC098N10NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3879884FEB9E11C&compId=BSC098N10NS5-DTE.pdf?ci_sign=31742ccebec498427e0db6b79cb1135e09669434 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Kind of channel: enhancement
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IHW40N135R5XKSA1 IHW40N135R5XKSA1 INFINEON TECHNOLOGIES Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.29 EUR
16+4.69 EUR
22+3.32 EUR
23+3.15 EUR
30+3.07 EUR
60+3.02 EUR
Mindestbestellmenge: 14
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IPD60R280CFD7 IPD60R280CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA746BF105C74A&compId=IPD60R280CFD7.pdf?ci_sign=eee2466600e65dfdc3beed43fe5dc29972e84cf0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
Gate charge: 18nC
On-state resistance: 0.536Ω
Drain current: 6A
Power dissipation: 51W
Gate-source voltage: ±20V
Technology: OptiMOS™
Drain-source voltage: 600V
Case: PG-TO252-3
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IDD06SG60C IDD06SG60C INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB82C54BF690FA8&compId=IDD06SG60C-DTE.pdf?ci_sign=851c90a389fd4d372f0c67b2bf7e56c16a8d899f Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 6A; 71W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: PG-TO252-3
Kind of package: reel; tape
Leakage current: 0.5µA
Max. forward voltage: 2.1V
Max. forward impulse current: 23A
Power dissipation: 71W
Technology: CoolSiC™ 3G; SiC
Produkt ist nicht verfügbar
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IDD05SG60C IDD05SG60C INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB822D8248D0FA8&compId=IDD05SG60C-DTE.pdf?ci_sign=837a226ff9e89a535c9c73fce29d66dc2f7d17a4 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 5A; 56W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: PG-TO252-3
Kind of package: reel; tape
Max. forward voltage: 2.1V
Max. forward impulse current: 18A
Power dissipation: 56W
Technology: CoolSiC™ 3G; SiC
Leakage current: 0.4µA
Produkt ist nicht verfügbar
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BTS3205NHUSA1 BTS3205NHUSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF4F8FB81166745&compId=BTS3205N.pdf?ci_sign=05ecda57c6e83a44cef7414def4b21c318e9e498 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 600mA; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Power dissipation: 0.78W
Number of channels: 1
On-state resistance: 1.9Ω
Technology: HITFET®
Output voltage: 42V
Output current: 0.6A
Mounting: SMD
Case: SOT223-4
Kind of output: N-Channel
Kind of integrated circuit: low-side
Produkt ist nicht verfügbar
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BCV49H6327XTSA1 INFINEON TECHNOLOGIES BCV29_49.pdf Category: Transistors - Unclassified
Description: BCV49H6327XTSA1
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.18 EUR
Mindestbestellmenge: 1000
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BSP50H6327XTSA1 BSP50H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586991C042987A469&compId=BSP50H6327XTSA1.pdf?ci_sign=542758f57bfb5844573fe09b784a03254dfb5c91 Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
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BTS5210L BTS5210L INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987AF60A62E469&compId=BTS5210L.pdf?ci_sign=1643026f07659dfa42b5687377d90babcf2df106 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; BSOP12
Technology: Classic PROFET
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Output current: 1.8A
On-state resistance: 0.11Ω
Number of channels: 2
Supply voltage: 5.5...40V DC
Kind of integrated circuit: high-side
Case: BSOP12
auf Bestellung 536 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.39 EUR
24+3 EUR
26+2.85 EUR
250+2.73 EUR
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IPP042N03LGXKSA1 IPP042N03LGXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4D60A532413011C&compId=IPP042N03LG-DTE.pdf?ci_sign=120b1ad691b43ca00d9d29c84f30c36acf957b5b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 79W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Power dissipation: 79W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.21 EUR
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2ED2184S06FXUMA1 2ED2184S06FXUMA1 INFINEON TECHNOLOGIES Infineon-2ED2184-4-S06F-J-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016cb8d76cf229fb Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
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1EDC60I12AHXUMA1 1EDC60I12AHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
auf Bestellung 603 Stücke:
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24+3.07 EUR
25+2.9 EUR
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1EDC30I12MHXUMA1 1EDC30I12MHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B631F8F54993D6&compId=1EDCxxI12MH.pdf?ci_sign=4561d7fac3ac124e788ba07bb931c0c6ab15205c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -3...3A
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...18V
Number of channels: 1
Voltage class: 600/650/1200V
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Topology: single transistor
auf Bestellung 998 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.68 EUR
26+2.79 EUR
28+2.63 EUR
50+2.55 EUR
Mindestbestellmenge: 20
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1EDI05I12AFXUMA1 1EDI05I12AFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -0.5...0.5A
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Number of channels: 1
Voltage class: 1.2kV
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Topology: single transistor
auf Bestellung 2096 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.96 EUR
41+1.74 EUR
52+1.39 EUR
55+1.32 EUR
250+1.27 EUR
Mindestbestellmenge: 37
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IAUC100N08S5N031ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Polarisation: unipolar
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 80V
Power dissipation: 167W
Pulsed drain current: 400A
Technology: OptiMOS™ 5
Kind of channel: enhancement
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
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IAUC100N08S5N034ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Polarisation: unipolar
Gate charge: 66nC
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 80V
Power dissipation: 136W
Pulsed drain current: 400A
Technology: OptiMOS™ 5
Kind of channel: enhancement
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
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IAUC100N08S5N043ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Polarisation: unipolar
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 76A
Drain-source voltage: 80V
Power dissipation: 120W
Pulsed drain current: 400A
Technology: OptiMOS™ 5
Kind of channel: enhancement
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
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IRF7452TRPBF IRF7452TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A37BEC8426F1A303005056AB0C4F&compId=irf7452pbf.pdf?ci_sign=362455816f184008d289cc4fcaf26d956f50d657 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7451PBF IRF7451PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A35F9093DFF1A303005056AB0C4F&compId=irf7451pbf.pdf?ci_sign=fe45e379b1aa1eedfed7f9b25048f3b66534b97a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7451TRPBF IRF7451TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A35F9093DFF1A303005056AB0C4F&compId=irf7451pbf.pdf?ci_sign=fe45e379b1aa1eedfed7f9b25048f3b66534b97a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7455TRPBF IRF7455TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A394A8FECCF1A303005056AB0C4F&compId=irf7455pbf.pdf?ci_sign=a8e199bc69b070ff2b01b8bdf83e57d71f58e4bc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7457TRPBF IRF7457TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A3D3C6C7FAF1A303005056AB0C4F&compId=irf7457pbf.pdf?ci_sign=f53326c1a66ccc11f63b761dfae3d8bee0ae43f5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IPD50R380CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 14.1A; 98W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 14.1A
Power dissipation: 98W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 24.8nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.52 EUR
Mindestbestellmenge: 2500
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TLD1314ELXUMA1 TLD1314ELXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE994C10BB88A6898BF&compId=TLD1314EL.pdf?ci_sign=f5a79c5c9d23cf4197f383c96b3d26c6cde43150 Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
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IPB107N20NAATMA1 IPB107N20NAATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBCC450370611C&compId=IPB107N20NA-DTE.pdf?ci_sign=95e67b89e8669e5b30bbb7d2de564a5b3a2d6af1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 820 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.46 EUR
25+7.31 EUR
Mindestbestellmenge: 10
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IPB107N20N3GATMA1 IPB107N20N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC09BF31FC11C&compId=IPB107N20N3G-DTE.pdf?ci_sign=3aa81fd74f1452936f06da3031e959bc85802488 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP052NE7N3GXKSA1 IPP052NE7N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9620822B1011C&compId=IPP052NE7N3G-DTE.pdf?ci_sign=468892a790d343bbb195f2418fb4605339d9ca3c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
41+1.74 EUR
47+1.53 EUR
57+1.26 EUR
61+1.19 EUR
Mindestbestellmenge: 40
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IRL7472L1TRPbF INFINEON TECHNOLOGIES Infineon-IRL7472L1-DS-v02_00-EN.pdf?fileId=5546d46254e133b401555d17178250d8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 68A; DirectFET-L8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 68A
Case: DirectFET-L8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IDP15E65D2XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6FF3B73774469&compId=IDP15E65D2.pdf?ci_sign=8b2271511ce4ce182f4702d6d46a9fe652cd5d1d
IDP15E65D2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Features of semiconductor devices: fast switching
auf Bestellung 655 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.09 EUR
46+1.57 EUR
73+0.99 EUR
77+0.93 EUR
100+0.92 EUR
250+0.9 EUR
Mindestbestellmenge: 35
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IDP15E65D1XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6F60C962A4469&compId=IDP15E65D1.pdf?ci_sign=ab03c6d2d221d5cc668abe5e29a23765e6141f60
IDP15E65D1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP183E7764HTSA1 Infineon-BFP183-DS-v01_01-EN.pdf?fileId=5546d462677d0f460167c628925b4907
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 65mA; 250mW; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.25W
Current gain: 70
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.14 EUR
Mindestbestellmenge: 3000
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SGW50N60HS pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B455D9BC6EC469&compId=SGW50N60HS.pdf?ci_sign=718c15903ce0d6a5268dc9a1e82eba2162229ae3
SGW50N60HS
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 416W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDI30I12MFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD3DE0A51A198BF&compId=1EDIxxI12MF.pdf?ci_sign=145fb7d90f013347b7813f67d148905823549b4c
1EDI30I12MFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Topology: single transistor
Output current: -3...3A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDI10I12MFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD3DE0A51A198BF&compId=1EDIxxI12MF.pdf?ci_sign=145fb7d90f013347b7813f67d148905823549b4c
1EDI10I12MFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Topology: single transistor
Output current: -1...1A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDI20I12MFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD3DE0A51A198BF&compId=1EDIxxI12MF.pdf?ci_sign=145fb7d90f013347b7813f67d148905823549b4c
1EDI20I12MFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Topology: single transistor
Output current: -2...2A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPAN60R280PFD7SXKSA1 Infineon-IPAN60R280PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626eab8fbf016ed5c9de013926
IPAN60R280PFD7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 7A; Idm: 31A
Mounting: THT
Case: TO220FP
Kind of package: tube
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 24W
Pulsed drain current: 31A
Drain-source voltage: 650V
Technology: CoolMOS™ PFD7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 549mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R280PFD7SAUMA1 Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 7A; Idm: 31A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 549mΩ
Drain current: 7A
Pulsed drain current: 31A
Power dissipation: 51W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
Produkt ist nicht verfügbar
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PVA3054NPBF pva30n.pdf?fileId=5546d462533600a4015356839c762923
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; Ucntrl: 1.2VDC; 25mA; PVA; THT; DIP8; -40÷85°C
Type of relay: solid state
Control voltage: 1.2V DC
Control current max.: 25mA
Manufacturer series: PVA
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Insulation voltage: 4kV
auf Bestellung 1900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+7.44 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
PVA3054NSPBF pva30n.pdf?fileId=5546d462533600a4015356839c762923
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.25VDC; Icntrl max: 25mA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.25V DC
Control current max.: 25mA
Max. operating current: 50mA
Manufacturer series: PVA
Mounting: SMT
Case: SMD8
Operating temperature: -40...85°C
Body dimensions: 9.4x6.5x3.9mm
Leads: Gull Wing
Insulation voltage: 4kV
auf Bestellung 956 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+8.27 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
BSP742T pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869766A91DFD2469&compId=BSP742T.pdf?ci_sign=e6e8ebf8ffc3284c7138eee105ccea59d6a3f9de
BSP742T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 800mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.26Ω
Technology: Classic PROFET
Output voltage: 40V
auf Bestellung 1567 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.22 EUR
35+2.09 EUR
50+1.44 EUR
53+1.36 EUR
500+1.3 EUR
Mindestbestellmenge: 23
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BSZ180P03NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A83237A3D1CC&compId=BSZ180P03NS3GATMA1-DTE.pdf?ci_sign=304a2011c07782bc019c3f0265e7929ef67a4796
BSZ180P03NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ180P03NS3EGATMA pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A7635D7851CC&compId=BSZ180P03NS3EGATMA-DTE.pdf?ci_sign=971d97016924af893a513ca586abb1484fedd47a
BSZ180P03NS3EGATMA
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGS12P2L6E6327XTSA1 Infineon-BGS12P2L6-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d4487d53603ce
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Mounting: SMD
Type of integrated circuit: RF switch
Supply voltage: 1.65...3.4V DC
Case: TSLP-6-4
Bandwidth: 0.05...6GHz
Application: telecommunication
Output configuration: SPDT
Produkt ist nicht verfügbar
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BTS72002EPAXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995D8FCA4AAD1F8BF&compId=BTS72002EPA.pdf?ci_sign=096f92e3b3fc16264538298f581bbf4ced1e5b56
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 0.12Ω
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Turn-on time: 170µs
Turn-off time: 0.15ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS72002EPCXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995D8F4E5FCD218BF&compId=BTS72002EPC.pdf?ci_sign=650657063cacfe9a7b8754ecbde50773a4a12541
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 0.12Ω
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Turn-on time: 170µs
Turn-off time: 0.15ms
Produkt ist nicht verfügbar
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BSZ100N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E418FECF9E11C&compId=BSZ100N06NS-DTE.pdf?ci_sign=2c2fadeec5f1af9aa66da941965b2afe221347ae
BSZ100N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA65R190E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2CAECCFE3B1BF&compId=IPA65R190E6-DTE.pdf?ci_sign=021fbd4cdff9db126bcf3787abcc493e074c7a0c
IPA65R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 34W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.19Ω
Drain current: 20.2A
Gate-source voltage: ±20V
Power dissipation: 34W
Drain-source voltage: 650V
Kind of package: tube
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.19 EUR
26+2.77 EUR
28+2.63 EUR
Mindestbestellmenge: 18
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BAT6405E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT6405E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Case: SOT23
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Max. off-state voltage: 40V
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
auf Bestellung 1521 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
528+0.14 EUR
642+0.11 EUR
685+0.1 EUR
799+0.09 EUR
864+0.083 EUR
1129+0.063 EUR
1194+0.06 EUR
Mindestbestellmenge: 528
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BAT6406E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT6406E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Type of diode: Schottky rectifying
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
auf Bestellung 5779 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
511+0.14 EUR
562+0.13 EUR
787+0.091 EUR
1102+0.065 EUR
1166+0.061 EUR
3000+0.059 EUR
Mindestbestellmenge: 358
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BAT64E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT64E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Type of diode: Schottky rectifying
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: single diode
auf Bestellung 2425 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
345+0.21 EUR
458+0.16 EUR
573+0.12 EUR
708+0.1 EUR
1238+0.058 EUR
1309+0.055 EUR
Mindestbestellmenge: 218
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IRFB7534PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6856A8A3EC1EC&compId=irfs7534pbf.pdf?ci_sign=58374929d2da0655e279f40bd664245c1c9d1a2d
IRFB7534PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 186nC
Trade name: StrongIRFET
auf Bestellung 926 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.49 EUR
34+2.12 EUR
50+1.44 EUR
53+1.36 EUR
100+1.34 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7734PBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8A5DC2D657A469&compId=IRFB7734PBF.pdf?ci_sign=bc7cc28ffb0486c427e821c8b7317f1232fe5615
IRFB7734PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 183A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR420U pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD61691658B15EA&compId=BCR420U.pdf?ci_sign=0ca17a34f60a3e7fc7f59a90f29534577755f717
BCR420U
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Mounting: SMD
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Number of channels: 1
Topology: single transistor
Integrated circuit features: linear dimming
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
BCR421UE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD618EC6C8DF5EA&compId=BCR421UE6327.pdf?ci_sign=dca36e6257f451c4dcb566801e7a45f24426b061
BCR421UE6327
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Mounting: SMD
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Number of channels: 1
Topology: single transistor
Integrated circuit features: linear dimming; PWM
auf Bestellung 1184 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
169+0.42 EUR
196+0.37 EUR
209+0.34 EUR
Mindestbestellmenge: 72
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BCR420UE6327HTSA1 Infineon-BCR420U-BCR421U-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d
BCR420UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Integrated circuit features: linear dimming
Topology: single transistor
Type of integrated circuit: driver
Output current: 150...200mA
Kind of integrated circuit: current regulator; LED driver
Number of channels: 1
Operating voltage: 1.4...40V DC
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
179+0.4 EUR
203+0.35 EUR
236+0.3 EUR
305+0.23 EUR
323+0.22 EUR
Mindestbestellmenge: 148
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BCR420UE6433HTMA1 Infineon-BCR420U-BCR421U-DataSheet-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Mounting: SMD
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Number of channels: 1
Topology: single transistor
Integrated circuit features: linear dimming
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR421UE6327HTSA1 Infineon-BCR420U-BCR421U-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Mounting: SMD
Operating voltage: 1.4...40V DC
Output current: 150...200mA
Number of channels: 1
Topology: single transistor
Integrated circuit features: linear dimming; PWM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SAK-TC1797-384F150E pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B44B48D9EF6469&compId=SAK-TC1797-384F150E.pdf?ci_sign=23a456cb26f03936757134008688725281715175
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC
Mounting: SMD
Interface: I2C; SPI; UART
Supply voltage: 3.5...5V DC
Memory: 3MB FLASH
Case: BGA416
Type of integrated circuit: microcontroller
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ100N06LS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E3DAAD43E211C&compId=BSZ100N06LS3G-DTE.pdf?ci_sign=4f5c55c03ed9fd06aee860c65e9b034596f8d145
BSZ100N06LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP100N06S2L05AKSA2 Infineon-IPP_B100N06S2L_05-DS-v01_00-en.pdf?fileId=db3a304412b407950112b4322a685747&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+3.35 EUR
200+3 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
BSC098N10NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3879884FEB9E11C&compId=BSC098N10NS5-DTE.pdf?ci_sign=31742ccebec498427e0db6b79cb1135e09669434
BSC098N10NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N135R5XKSA1 Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a
IHW40N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.29 EUR
16+4.69 EUR
22+3.32 EUR
23+3.15 EUR
30+3.07 EUR
60+3.02 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R280CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA746BF105C74A&compId=IPD60R280CFD7.pdf?ci_sign=eee2466600e65dfdc3beed43fe5dc29972e84cf0
IPD60R280CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
Gate charge: 18nC
On-state resistance: 0.536Ω
Drain current: 6A
Power dissipation: 51W
Gate-source voltage: ±20V
Technology: OptiMOS™
Drain-source voltage: 600V
Case: PG-TO252-3
Produkt ist nicht verfügbar
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IDD06SG60C pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB82C54BF690FA8&compId=IDD06SG60C-DTE.pdf?ci_sign=851c90a389fd4d372f0c67b2bf7e56c16a8d899f
IDD06SG60C
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 6A; 71W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: PG-TO252-3
Kind of package: reel; tape
Leakage current: 0.5µA
Max. forward voltage: 2.1V
Max. forward impulse current: 23A
Power dissipation: 71W
Technology: CoolSiC™ 3G; SiC
Produkt ist nicht verfügbar
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IDD05SG60C pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB822D8248D0FA8&compId=IDD05SG60C-DTE.pdf?ci_sign=837a226ff9e89a535c9c73fce29d66dc2f7d17a4
IDD05SG60C
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 5A; 56W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: PG-TO252-3
Kind of package: reel; tape
Max. forward voltage: 2.1V
Max. forward impulse current: 18A
Power dissipation: 56W
Technology: CoolSiC™ 3G; SiC
Leakage current: 0.4µA
Produkt ist nicht verfügbar
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BTS3205NHUSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF4F8FB81166745&compId=BTS3205N.pdf?ci_sign=05ecda57c6e83a44cef7414def4b21c318e9e498
BTS3205NHUSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 600mA; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Power dissipation: 0.78W
Number of channels: 1
On-state resistance: 1.9Ω
Technology: HITFET®
Output voltage: 42V
Output current: 0.6A
Mounting: SMD
Case: SOT223-4
Kind of output: N-Channel
Kind of integrated circuit: low-side
Produkt ist nicht verfügbar
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BCV49H6327XTSA1 BCV29_49.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: BCV49H6327XTSA1
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.18 EUR
Mindestbestellmenge: 1000
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BSP50H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586991C042987A469&compId=BSP50H6327XTSA1.pdf?ci_sign=542758f57bfb5844573fe09b784a03254dfb5c91
BSP50H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
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BTS5210L pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987AF60A62E469&compId=BTS5210L.pdf?ci_sign=1643026f07659dfa42b5687377d90babcf2df106
BTS5210L
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; BSOP12
Technology: Classic PROFET
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Output current: 1.8A
On-state resistance: 0.11Ω
Number of channels: 2
Supply voltage: 5.5...40V DC
Kind of integrated circuit: high-side
Case: BSOP12
auf Bestellung 536 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.39 EUR
24+3 EUR
26+2.85 EUR
250+2.73 EUR
Mindestbestellmenge: 14
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IPP042N03LGXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4D60A532413011C&compId=IPP042N03LG-DTE.pdf?ci_sign=120b1ad691b43ca00d9d29c84f30c36acf957b5b
IPP042N03LGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 79W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Power dissipation: 79W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
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2ED2184S06FXUMA1 Infineon-2ED2184-4-S06F-J-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016cb8d76cf229fb
2ED2184S06FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDC60I12AHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871
1EDC60I12AHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.07 EUR
25+2.9 EUR
Mindestbestellmenge: 24
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1EDC30I12MHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B631F8F54993D6&compId=1EDCxxI12MH.pdf?ci_sign=4561d7fac3ac124e788ba07bb931c0c6ab15205c
1EDC30I12MHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -3...3A
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...18V
Number of channels: 1
Voltage class: 600/650/1200V
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Topology: single transistor
auf Bestellung 998 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.68 EUR
26+2.79 EUR
28+2.63 EUR
50+2.55 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
1EDI05I12AFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20
1EDI05I12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -0.5...0.5A
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Number of channels: 1
Voltage class: 1.2kV
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Topology: single transistor
auf Bestellung 2096 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.96 EUR
41+1.74 EUR
52+1.39 EUR
55+1.32 EUR
250+1.27 EUR
Mindestbestellmenge: 37
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IAUC100N08S5N031ATMA1 Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Polarisation: unipolar
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 80V
Power dissipation: 167W
Pulsed drain current: 400A
Technology: OptiMOS™ 5
Kind of channel: enhancement
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N08S5N034ATMA1 Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Polarisation: unipolar
Gate charge: 66nC
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 80V
Power dissipation: 136W
Pulsed drain current: 400A
Technology: OptiMOS™ 5
Kind of channel: enhancement
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N08S5N043ATMA1 Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Polarisation: unipolar
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 76A
Drain-source voltage: 80V
Power dissipation: 120W
Pulsed drain current: 400A
Technology: OptiMOS™ 5
Kind of channel: enhancement
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7452TRPBF pVersion=0046&contRep=ZT&docId=E221A37BEC8426F1A303005056AB0C4F&compId=irf7452pbf.pdf?ci_sign=362455816f184008d289cc4fcaf26d956f50d657
IRF7452TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7451PBF pVersion=0046&contRep=ZT&docId=E221A35F9093DFF1A303005056AB0C4F&compId=irf7451pbf.pdf?ci_sign=fe45e379b1aa1eedfed7f9b25048f3b66534b97a
IRF7451PBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7451TRPBF pVersion=0046&contRep=ZT&docId=E221A35F9093DFF1A303005056AB0C4F&compId=irf7451pbf.pdf?ci_sign=fe45e379b1aa1eedfed7f9b25048f3b66534b97a
IRF7451TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7455TRPBF pVersion=0046&contRep=ZT&docId=E221A394A8FECCF1A303005056AB0C4F&compId=irf7455pbf.pdf?ci_sign=a8e199bc69b070ff2b01b8bdf83e57d71f58e4bc
IRF7455TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7457TRPBF pVersion=0046&contRep=ZT&docId=E221A3D3C6C7FAF1A303005056AB0C4F&compId=irf7457pbf.pdf?ci_sign=f53326c1a66ccc11f63b761dfae3d8bee0ae43f5
IRF7457TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50R380CEAUMA1 Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 14.1A; 98W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 14.1A
Power dissipation: 98W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 24.8nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.52 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TLD1314ELXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE994C10BB88A6898BF&compId=TLD1314EL.pdf?ci_sign=f5a79c5c9d23cf4197f383c96b3d26c6cde43150
TLD1314ELXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
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IPB107N20NAATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBCC450370611C&compId=IPB107N20NA-DTE.pdf?ci_sign=95e67b89e8669e5b30bbb7d2de564a5b3a2d6af1
IPB107N20NAATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 820 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.46 EUR
25+7.31 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPB107N20N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC09BF31FC11C&compId=IPB107N20N3G-DTE.pdf?ci_sign=3aa81fd74f1452936f06da3031e959bc85802488
IPB107N20N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP052NE7N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9620822B1011C&compId=IPP052NE7N3G-DTE.pdf?ci_sign=468892a790d343bbb195f2418fb4605339d9ca3c
IPP052NE7N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
41+1.74 EUR
47+1.53 EUR
57+1.26 EUR
61+1.19 EUR
Mindestbestellmenge: 40
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IRL7472L1TRPbF Infineon-IRL7472L1-DS-v02_00-EN.pdf?fileId=5546d46254e133b401555d17178250d8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 68A; DirectFET-L8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 68A
Case: DirectFET-L8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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