Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (151672) > Seite 2483 nach 2528
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IMBG40R015M2HXTMA1 | Infineon Technologies |
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BSB165N15NZ3GXUMA3 | Infineon Technologies |
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BSB165N15NZ3GXUMA2 | Infineon Technologies |
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CY5677 | Infineon Technologies |
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SLB9672VU20FW1523XTMA1 | Infineon Technologies |
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SLB9672AU20FW1610XTMA1 | Infineon Technologies |
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SLB9672XU20FW1523XTMA1 | Infineon Technologies |
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SLB9672XU20FW1613XTMA1 | Infineon Technologies |
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SLB9672AU20FW1612XTMA1 | Infineon Technologies | SP005750322 |
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SLB9672AU20FW1613XTMA1 | Infineon Technologies |
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SLB9672VU20FW1522XTMA1 | Infineon Technologies |
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IPTC025N15NM6ATMA1 | Infineon Technologies |
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IPT025N15NM6ATMA1 | Infineon Technologies |
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ISC055N15NM6ATMA1 | Infineon Technologies |
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ISC044N15NM6ATMA1 | Infineon Technologies |
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IPF026N15NM6ATMA1 | Infineon Technologies |
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IPP089N15NM6AKSA1 | Infineon Technologies | IPP089N15NM6AKSA1 |
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T3401N33TOFS20XPSA1 | Infineon Technologies | SP000091136 |
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BSL215C H6327 | Infineon Technologies |
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IGB20N60H3ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 170W; D2PAK Type of transistor: IGBT Power dissipation: 170W Case: D2PAK Mounting: SMD Kind of package: tube Collector-emitter voltage: 600V Collector current: 20A Gate-emitter voltage: ±20V |
auf Bestellung 911 Stücke: Lieferzeit 14-21 Tag (e) |
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IGP20N60H3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 170W; TO220-3 Type of transistor: IGBT Power dissipation: 170W Case: TO220-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Collector current: 20A Gate-emitter voltage: ±20V |
auf Bestellung 277 Stücke: Lieferzeit 14-21 Tag (e) |
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IGW20N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 170W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 170W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Manufacturer series: H3 Collector current: 20A Gate-emitter voltage: ±20V |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB20N60H3ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 85W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 85W Case: D2PAK Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.12µC Turn-on time: 36ns Turn-off time: 205ns Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 80A |
Produkt ist nicht verfügbar |
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IKB20N60TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 28A; 166W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 166W Case: D2PAK Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.12µC Turn-on time: 32ns Turn-off time: 241ns Collector current: 28A Gate-emitter voltage: ±20V Pulsed collector current: 60A |
Produkt ist nicht verfügbar |
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IKP20N60H3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 85W; TO220-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 85W Case: TO220-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.12µC Turn-on time: 31ns Turn-off time: 241ns Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 80A |
Produkt ist nicht verfügbar |
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IKP20N60TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 166W; TO220-3 Type of transistor: IGBT Power dissipation: 166W Case: TO220-3 Mounting: THT Gate charge: 0.12µC Kind of package: tube Technology: TRENCHSTOP™ Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 36ns Turn-off time: 299ns Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 60A Collector-emitter voltage: 600V |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW20N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 85W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 85W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.12µC Turn-on time: 28ns Turn-off time: 205ns Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 80A |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW20N60TFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 166W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.12µC Turn-on time: 36ns Turn-off time: 299ns Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 60A |
auf Bestellung 214 Stücke: Lieferzeit 14-21 Tag (e) |
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SPA20N60C3 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 34.5W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.1A Power dissipation: 34.5W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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SPA20N60CFDXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 35W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.1A Power dissipation: 35W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.22Ω Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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SPB20N60C3 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.7A; 208W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.7A Power dissipation: 208W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhancement |
auf Bestellung 797 Stücke: Lieferzeit 14-21 Tag (e) |
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SPB20N60S5 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 208W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRLML0030TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; 1.3W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.3A Power dissipation: 1.3W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 2706 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR220NTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK Case: DPAK Kind of package: reel Technology: HEXFET® Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 5A Power dissipation: 43W Drain-source voltage: 200V |
auf Bestellung 692 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS1602VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SC79 Type of diode: switching Features of semiconductor devices: ultrafast switching Reverse recovery time: 4ns Load current: 0.2A Power dissipation: 0.25W Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Max. off-state voltage: 85V |
auf Bestellung 3291 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS1603WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.25W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching |
auf Bestellung 1735 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.37W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching |
auf Bestellung 13452 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ48NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 94W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 64A Power dissipation: 94W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 375 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ48NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 140W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 64A Power dissipation: 140W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
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IRFB7545PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 95A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Trade name: StrongIRFET |
auf Bestellung 827 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLML5203TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 1.25W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -3A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 5723 Stücke: Lieferzeit 14-21 Tag (e) |
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BC857AE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
auf Bestellung 1557 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9Z34NPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -19A Power dissipation: 68W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 23.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 738 Stücke: Lieferzeit 14-21 Tag (e) |
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IKP15N65F5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Case: TO220-3 Mounting: THT Kind of package: tube Gate charge: 38nC Turn-on time: 24ns Turn-off time: 166ns Power dissipation: 52.5W Collector current: 18A Gate-emitter voltage: ±20V Pulsed collector current: 45A Collector-emitter voltage: 650V Manufacturer series: H5 Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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IR2104PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -270...130mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 680ns Turn-off time: 150ns |
auf Bestellung 64 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2104SPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -270...130mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 680ns Turn-off time: 150ns |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2104STRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -270...130mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 680ns Turn-off time: 150ns |
auf Bestellung 1311 Stücke: Lieferzeit 14-21 Tag (e) |
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IGB50N60TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 50A; 333W; D2PAK Type of transistor: IGBT Power dissipation: 333W Case: D2PAK Mounting: SMD Kind of package: tube Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IGP50N60TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 50A; 333W; TO220-3 Type of transistor: IGBT Power dissipation: 333W Case: TO220-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IGW50N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 333W Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Manufacturer series: H3 Collector current: 50A Pulsed collector current: 200A Collector-emitter voltage: 600V |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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IGW50N60TFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 333W Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 64A Pulsed collector current: 150A Collector-emitter voltage: 600V |
auf Bestellung 135 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW50N60DTPXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 159.6W Case: TO247-3 Mounting: THT Gate charge: 249nC Kind of package: tube Turn-on time: 50ns Turn-off time: 233ns Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector current: 61A Pulsed collector current: 150A Collector-emitter voltage: 600V |
auf Bestellung 229 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW50N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 167W Case: TO247-3 Mounting: THT Gate charge: 315nC Kind of package: tube Turn-on time: 54ns Turn-off time: 297ns Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Manufacturer series: H3 Collector current: 50A Pulsed collector current: 200A Collector-emitter voltage: 600V |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW50N60TFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 333W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 600V |
auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
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AIKW50N60CTXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 333W Case: TO247-3 Mounting: THT Gate charge: 310nC Kind of package: tube Turn-on time: 55ns Turn-off time: 328ns Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 150A Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IKFW50N60DH3EXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 95W Case: PG-TO247-3-AI Mounting: THT Gate charge: 160nC Kind of package: tube Turn-on time: 60ns Turn-off time: 192ns Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector current: 37A Pulsed collector current: 120A Collector-emitter voltage: 600V |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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IKFW50N60ETXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 120W Case: PG-TO247-3-AI Mounting: THT Gate charge: 290nC Kind of package: tube Turn-on time: 61ns Turn-off time: 332ns Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector current: 59A Pulsed collector current: 150A Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
IPD50N06S409ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 47A Pulsed drain current: 200A Power dissipation: 71W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
IPD50N06S4L08ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 47A Pulsed drain current: 200A Power dissipation: 71W Case: PG-TO252-3-11 Gate-source voltage: ±16V On-state resistance: 7.8mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IPD50N06S4L12ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W Type of transistor: N-MOSFET Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Power dissipation: 50W Case: PG-TO252-3 Gate-source voltage: ±16V On-state resistance: 12mΩ Mounting: SMD Gate charge: 30nC Kind of channel: enhancement |
auf Bestellung 1985 Stücke: Lieferzeit 14-21 Tag (e) |
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IMBG40R015M2HXTMA1 |
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Hersteller: Infineon Technologies
Cool SiC G2 MOSFET
Cool SiC G2 MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSB165N15NZ3GXUMA3 |
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Hersteller: Infineon Technologies
BSB165N15NZ3GXUMA3
BSB165N15NZ3GXUMA3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSB165N15NZ3GXUMA2 |
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Hersteller: Infineon Technologies
BSB165N15NZ3GXUMA2
BSB165N15NZ3GXUMA2
Produkt ist nicht verfügbar
Im Einkaufswagen
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CY5677 |
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Hersteller: Infineon Technologies
CYBL11573-56LQX Bluetooth Development Board
CYBL11573-56LQX Bluetooth Development Board
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SLB9672VU20FW1523XTMA1 |
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Hersteller: Infineon Technologies
Secure MCU 16bit OPTIGA™ TPM CISC 1.8V/3.3V 32-Pin UQFN EP T/R
Secure MCU 16bit OPTIGA™ TPM CISC 1.8V/3.3V 32-Pin UQFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SLB9672AU20FW1610XTMA1 |
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Hersteller: Infineon Technologies
Secure MCU 16bit OPTIGA™ TPM CISC 1.8V/3.3V 32-Pin UQFN EP T/R
Secure MCU 16bit OPTIGA™ TPM CISC 1.8V/3.3V 32-Pin UQFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SLB9672XU20FW1523XTMA1 |
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Hersteller: Infineon Technologies
TPM
TPM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SLB9672XU20FW1613XTMA1 |
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Hersteller: Infineon Technologies
Secure MCU 32bit OPTIGA™ TPM RISC 51KB Flash 1.8V/3.3V 32-Pin UQFN EP T/R
Secure MCU 32bit OPTIGA™ TPM RISC 51KB Flash 1.8V/3.3V 32-Pin UQFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SLB9672AU20FW1612XTMA1 |
Hersteller: Infineon Technologies
SP005750322
SP005750322
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SLB9672AU20FW1613XTMA1 |
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Hersteller: Infineon Technologies
Secure MCU 32bit OPTIGA™ TPM RISC 51KB Flash 1.8V/3.3V 32-Pin UQFN EP T/R
Secure MCU 32bit OPTIGA™ TPM RISC 51KB Flash 1.8V/3.3V 32-Pin UQFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SLB9672VU20FW1522XTMA1 |
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Hersteller: Infineon Technologies
Secure MCU 32bit OPTIGA™ TPM RISC 51KB Flash 1.8V/3.3V 32-Pin UQFN EP T/R
Secure MCU 32bit OPTIGA™ TPM RISC 51KB Flash 1.8V/3.3V 32-Pin UQFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPTC025N15NM6ATMA1 |
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Hersteller: Infineon Technologies
IPTC025N15NM6ATMA1
IPTC025N15NM6ATMA1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPT025N15NM6ATMA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 150V 26A 9-Pin(8+Tab) HSOF T/R
Trans MOSFET N-CH 150V 26A 9-Pin(8+Tab) HSOF T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ISC055N15NM6ATMA1 |
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Hersteller: Infineon Technologies
ISC055N15NM6ATMA1
ISC055N15NM6ATMA1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ISC044N15NM6ATMA1 |
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Hersteller: Infineon Technologies
ISC044N15NM6ATMA1
ISC044N15NM6ATMA1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPF026N15NM6ATMA1 |
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Hersteller: Infineon Technologies
IPF026N15NM6ATMA1
IPF026N15NM6ATMA1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP089N15NM6AKSA1 |
Hersteller: Infineon Technologies
IPP089N15NM6AKSA1
IPP089N15NM6AKSA1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
T3401N33TOFS20XPSA1 |
Hersteller: Infineon Technologies
SP000091136
SP000091136
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSL215C H6327 |
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Hersteller: Infineon Technologies
Trans MOSFET N/P-CH 20V 1.5A Automotive AEC-Q101 6-Pin TSOP T/R
Trans MOSFET N/P-CH 20V 1.5A Automotive AEC-Q101 6-Pin TSOP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGB20N60H3ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; D2PAK
Type of transistor: IGBT
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Collector current: 20A
Gate-emitter voltage: ±20V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; D2PAK
Type of transistor: IGBT
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Collector current: 20A
Gate-emitter voltage: ±20V
auf Bestellung 911 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.59 EUR |
34+ | 2.13 EUR |
38+ | 1.89 EUR |
53+ | 1.36 EUR |
56+ | 1.29 EUR |
100+ | 1.23 EUR |
IGP20N60H3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; TO220-3
Type of transistor: IGBT
Power dissipation: 170W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Collector current: 20A
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; TO220-3
Type of transistor: IGBT
Power dissipation: 170W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Collector current: 20A
Gate-emitter voltage: ±20V
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.93 EUR |
29+ | 2.5 EUR |
44+ | 1.63 EUR |
47+ | 1.54 EUR |
50+ | 1.5 EUR |
100+ | 1.49 EUR |
IGW20N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 170W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Manufacturer series: H3
Collector current: 20A
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 170W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Manufacturer series: H3
Collector current: 20A
Gate-emitter voltage: ±20V
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.78 EUR |
23+ | 3.23 EUR |
24+ | 3 EUR |
32+ | 2.26 EUR |
34+ | 2.14 EUR |
35+ | 2.1 EUR |
IKB20N60H3ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 36ns
Turn-off time: 205ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 36ns
Turn-off time: 205ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKB20N60TATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 166W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 28A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 166W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 28A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKP20N60H3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO220-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 85W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 31ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO220-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 85W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 31ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKP20N60TXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO220-3
Type of transistor: IGBT
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 36ns
Turn-off time: 299ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO220-3
Type of transistor: IGBT
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 36ns
Turn-off time: 299ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 600V
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.73 EUR |
32+ | 2.25 EUR |
34+ | 2.12 EUR |
50+ | 2.04 EUR |
IKW20N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 28ns
Turn-off time: 205ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 28ns
Turn-off time: 205ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.12 EUR |
19+ | 3.88 EUR |
21+ | 3.47 EUR |
22+ | 3.27 EUR |
30+ | 3.16 EUR |
IKW20N60TFKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 36ns
Turn-off time: 299ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 36ns
Turn-off time: 299ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.23 EUR |
36+ | 2.03 EUR |
38+ | 1.92 EUR |
SPA20N60C3 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 34.5W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 34.5W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 34.5W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 34.5W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.71 EUR |
19+ | 3.83 EUR |
20+ | 3.62 EUR |
25+ | 3.52 EUR |
50+ | 3.49 EUR |
SPA20N60CFDXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 35W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 35W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 35W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 35W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SPB20N60C3 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.7A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.7A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 797 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.49 EUR |
21+ | 3.45 EUR |
22+ | 3.26 EUR |
250+ | 3.2 EUR |
SPB20N60S5 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLML0030TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2706 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
216+ | 0.33 EUR |
265+ | 0.27 EUR |
329+ | 0.22 EUR |
511+ | 0.14 EUR |
685+ | 0.1 EUR |
725+ | 0.099 EUR |
IRFR220NTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Case: DPAK
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 5A
Power dissipation: 43W
Drain-source voltage: 200V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Case: DPAK
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 5A
Power dissipation: 43W
Drain-source voltage: 200V
auf Bestellung 692 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.3 EUR |
73+ | 0.99 EUR |
82+ | 0.87 EUR |
190+ | 0.38 EUR |
200+ | 0.36 EUR |
BAS1602VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SC79
Type of diode: switching
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 4ns
Load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Max. off-state voltage: 85V
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SC79
Type of diode: switching
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 4ns
Load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Max. off-state voltage: 85V
auf Bestellung 3291 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
625+ | 0.11 EUR |
807+ | 0.089 EUR |
893+ | 0.08 EUR |
1064+ | 0.067 EUR |
1183+ | 0.06 EUR |
1309+ | 0.055 EUR |
1386+ | 0.052 EUR |
3000+ | 0.05 EUR |
BAS1603WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 1735 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
410+ | 0.17 EUR |
895+ | 0.08 EUR |
995+ | 0.072 EUR |
1210+ | 0.059 EUR |
1280+ | 0.056 EUR |
BAS16E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 13452 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
777+ | 0.092 EUR |
893+ | 0.08 EUR |
1087+ | 0.066 EUR |
1211+ | 0.059 EUR |
1306+ | 0.055 EUR |
1498+ | 0.048 EUR |
1583+ | 0.045 EUR |
IRFZ48NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 94W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 94W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 94W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 94W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 375 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
82+ | 0.87 EUR |
92+ | 0.78 EUR |
150+ | 0.48 EUR |
159+ | 0.45 EUR |
IRFZ48NSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 140W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 140W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFB7545PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 95A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 95A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 827 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
99+ | 0.73 EUR |
114+ | 0.63 EUR |
144+ | 0.5 EUR |
152+ | 0.47 EUR |
500+ | 0.45 EUR |
IRLML5203TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 5723 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
237+ | 0.3 EUR |
342+ | 0.21 EUR |
399+ | 0.18 EUR |
814+ | 0.088 EUR |
860+ | 0.083 EUR |
BC857AE6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1557 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1441+ | 0.05 EUR |
1557+ | 0.046 EUR |
IRF9Z34NPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -19A
Power dissipation: 68W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 23.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -19A
Power dissipation: 68W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 23.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 738 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
54+ | 1.34 EUR |
67+ | 1.08 EUR |
91+ | 0.79 EUR |
159+ | 0.45 EUR |
174+ | 0.41 EUR |
IKP15N65F5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 38nC
Turn-on time: 24ns
Turn-off time: 166ns
Power dissipation: 52.5W
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 38nC
Turn-on time: 24ns
Turn-off time: 166ns
Power dissipation: 52.5W
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR2104PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.75 EUR |
31+ | 2.36 EUR |
33+ | 2.23 EUR |
IR2104SPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.3 EUR |
IR2104STRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 1311 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.44 EUR |
67+ | 1.08 EUR |
83+ | 0.87 EUR |
88+ | 0.82 EUR |
IGB50N60TATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; D2PAK
Type of transistor: IGBT
Power dissipation: 333W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; D2PAK
Type of transistor: IGBT
Power dissipation: 333W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGP50N60TXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO220-3
Type of transistor: IGBT
Power dissipation: 333W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO220-3
Type of transistor: IGBT
Power dissipation: 333W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGW50N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.35 EUR |
17+ | 4.29 EUR |
18+ | 4.05 EUR |
30+ | 3.96 EUR |
IGW50N60TFKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 64A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 64A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.22 EUR |
17+ | 4.23 EUR |
18+ | 3.99 EUR |
30+ | 3.85 EUR |
IKW50N60DTPXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 159.6W
Case: TO247-3
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 233ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 61A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 159.6W
Case: TO247-3
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 233ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 61A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
auf Bestellung 229 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.25 EUR |
32+ | 2.25 EUR |
34+ | 2.12 EUR |
IKW50N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 297ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 297ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.71 EUR |
19+ | 3.95 EUR |
20+ | 3.73 EUR |
IKW50N60TFKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.34 EUR |
15+ | 4.78 EUR |
AIKW50N60CTXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 328ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 328ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKFW50N60DH3EXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 192ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 192ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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6+ | 11.91 EUR |
IKFW50N60ETXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 120W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 59A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 120W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 59A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD50N06S409ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD50N06S4L08ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD50N06S4L12ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 50W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 50W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
auf Bestellung 1985 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.3 EUR |
82+ | 0.88 EUR |
89+ | 0.81 EUR |
91+ | 0.79 EUR |
94+ | 0.77 EUR |
100+ | 0.74 EUR |