Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149672) > Seite 2483 nach 2495
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CY7C1373KV33-133AXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; TQFP100; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 1Mx18bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 133MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
CY7C1381KV33-133AXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 512kx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 133MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
CY7C1383KV33-133AXCT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 512kx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape Supply voltage: 3.135...3.6V DC Frequency: 133MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
CY7C1383KV33-133AXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; TQFP100; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 1Mx18bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 133MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
CY7C1441KV33-133AXC | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 1Mx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 133MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
CY7C1441KV33-133AXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 1Mx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 133MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
CY7C1461KV33-133AXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 1Mx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 133MHz |
Produkt ist nicht verfügbar |
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CY7C1471BV33-133AXC | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 133MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
CY7C1481BV33-133AXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 133MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
CY8C5888FNI-LP214T | INFINEON TECHNOLOGIES |
![]() Description: CY8C5888FNI-LP214T |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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CY96F623RBPMC1-GS-UJE2 | INFINEON TECHNOLOGIES |
![]() Description: IC: microcontroller Type of integrated circuit: microcontroller |
auf Bestellung 855 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB100N06S205ATMA4 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 100A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 130nC Kind of channel: enhancement Technology: OptiMOS™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPB100N06S2L05ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 100A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 170nC Kind of channel: enhancement Technology: OptiMOS™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IPD100N06S403ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD90N06S407ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 63A; Idm: 360A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 63A Pulsed drain current: 360A Power dissipation: 79W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 6.9mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IPB090N06N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 71W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IPD90N06S404ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 42500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR2905ZTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Drain-source voltage: 55V Drain current: 42A On-state resistance: 14.5mΩ Gate charge: 44nC Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 240A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
AUIRFR2905ZTRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R280P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 53W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of channel: enhancement Version: ESD Gate charge: 18nC |
auf Bestellung 2251 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R280E6FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ E6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Power dissipation: 104W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPD60R280P7S | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 53W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of channel: enhancement Version: ESD Gate charge: 18nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPB60R280P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; D2PAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 53W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement Gate charge: 18nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPP60R280E6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ E6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Power dissipation: 104W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPW60R280C6FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Power dissipation: 104W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPP60R280CFD7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 52W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 52W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.536Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 18nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPB60R280C6ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Power dissipation: 104W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPD60R280CFD7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 51W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.536Ω Mounting: SMD Kind of channel: enhancement Gate charge: 18nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IPD60R280PFD7SAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 7A; Idm: 31A Type of transistor: N-MOSFET Technology: CoolMOS™ PFD7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 51W Case: TO252 Gate-source voltage: ±20V On-state resistance: 549mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 31A Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IPI60R280C6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Power dissipation: 104W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPP60R280P7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO220-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 53W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPW60R280P6FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Power dissipation: 104W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPAN60R280PFD7SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 7A; Idm: 31A Type of transistor: N-MOSFET Technology: CoolMOS™ PFD7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 31A Power dissipation: 24W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 549mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IR2130STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2132JTRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2001STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRGP4062DPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 48A; 250W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 250W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IDP40E65D2XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: rectifying; THT; 650V; 40A; tube; TO220-2 Type of diode: rectifying Case: TO220-2 Mounting: THT Max. off-state voltage: 650V Load current: 40A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube |
auf Bestellung 152 Stücke: Lieferzeit 14-21 Tag (e) |
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IDV08E65D2XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: rectifying; THT; 650V; 8A; tube; TO220FP-2 Type of diode: rectifying Case: TO220FP-2 Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube |
auf Bestellung 195 Stücke: Lieferzeit 14-21 Tag (e) |
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IDP18E120XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: rectifying; THT; 1.2kV; 18A; tube; TO220-2 Type of diode: rectifying Case: TO220-2 Mounting: THT Max. off-state voltage: 1.2kV Load current: 18A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube |
auf Bestellung 731 Stücke: Lieferzeit 14-21 Tag (e) |
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S25FL128SAGBHBA00 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Application: automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL128SAGBHBA03 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Application: automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL128SAGBHBB03 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Application: automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL128SAGBHI203 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL128SAGBHI210 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL128SAGBHI300 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL128SAGBHI303 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL128SAGBHIA03 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL128SAGBHIA10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL128SAGBHIA13 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL128SAGBHIZ00 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL128SAGBHM200 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray Application: automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL128SAGBHM203 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Application: automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL128SAGBHV200 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL128SAGBHVA00 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL128SAGBHVA03 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL128SAGBHVB00 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL128SAGMFB000 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Application: automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL128SAGMFB003 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Application: automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
S25FL128SAGMFBG00 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Application: automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
CY7C1373KV33-133AXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1381KV33-133AXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1383KV33-133AXCT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1383KV33-133AXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1441KV33-133AXC |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1441KV33-133AXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1461KV33-133AXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1471BV33-133AXC |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1481BV33-133AXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY8C5888FNI-LP214T |
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auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2000+ | 35.76 EUR |
CY96F623RBPMC1-GS-UJE2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
auf Bestellung 855 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
160+ | 28.40 EUR |
IPB100N06S205ATMA4 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB100N06S2L05ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD100N06S403ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.32 EUR |
IPD90N06S407ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; Idm: 360A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Pulsed drain current: 360A
Power dissipation: 79W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; Idm: 360A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Pulsed drain current: 360A
Power dissipation: 79W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB090N06N3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD90N06S404ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 42500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.27 EUR |
IRFR2905ZTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Drain-source voltage: 55V
Drain current: 42A
On-state resistance: 14.5mΩ
Gate charge: 44nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 240A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Drain-source voltage: 55V
Drain current: 42A
On-state resistance: 14.5mΩ
Gate charge: 44nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 240A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRFR2905ZTRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.60 EUR |
IPD60R280P7ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 18nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 18nC
auf Bestellung 2251 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.09 EUR |
40+ | 1.79 EUR |
50+ | 1.44 EUR |
53+ | 1.36 EUR |
54+ | 1.33 EUR |
75+ | 1.30 EUR |
IPW60R280E6FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD60R280P7S |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 18nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 18nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB60R280P7ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 18nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 18nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP60R280E6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPW60R280C6FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP60R280CFD7 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 52W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 52W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.536Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 52W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 52W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.536Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB60R280C6ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD60R280CFD7 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 51W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.536Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 51W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.536Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD60R280PFD7SAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 7A; Idm: 31A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 51W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 549mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 31A
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 7A; Idm: 31A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 51W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 549mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 31A
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPI60R280C6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP60R280P7 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPW60R280P6FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPAN60R280PFD7SXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 7A; Idm: 31A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 31A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 549mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 7A; Idm: 31A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 31A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 549mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR2130STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 2.47 EUR |
IR2132JTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 5.98 EUR |
IRS2001STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.92 EUR |
IRGP4062DPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IDP40E65D2XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 40A; tube; TO220-2
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 40A; tube; TO220-2
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.57 EUR |
37+ | 1.97 EUR |
39+ | 1.87 EUR |
50+ | 1.86 EUR |
100+ | 1.79 EUR |
IDV08E65D2XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 8A; tube; TO220FP-2
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 8A; tube; TO220FP-2
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
64+ | 1.13 EUR |
72+ | 1.00 EUR |
83+ | 0.87 EUR |
88+ | 0.82 EUR |
IDP18E120XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 18A; tube; TO220-2
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 18A; tube; TO220-2
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
auf Bestellung 731 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.56 EUR |
32+ | 2.27 EUR |
37+ | 1.97 EUR |
39+ | 1.86 EUR |
S25FL128SAGBHBA00 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL128SAGBHBA03 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL128SAGBHBB03 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL128SAGBHI203 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL128SAGBHI210 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL128SAGBHI300 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL128SAGBHI303 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL128SAGBHIA03 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL128SAGBHIA10 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL128SAGBHIA13 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL128SAGBHIZ00 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL128SAGBHM200 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL128SAGBHM203 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL128SAGBHV200 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL128SAGBHVA00 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL128SAGBHVA03 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL128SAGBHVB00 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL128SAGMFB000 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL128SAGMFB003 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL128SAGMFBG00 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH