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BSC112N06LDATMA1 INFINEON TECHNOLOGIES Infineon-BSC112N06LD-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905f559210ce6 Category: Transistors - Unclassified
Description: BSC112N06LDATMA1
auf Bestellung 5000 Stücke:
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5000+0.73 EUR
Mindestbestellmenge: 5000
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BSC094N06LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC094N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5ce52407ba3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 47A; 36W; PG-TDSON-8; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 47A
Power dissipation: 36W
Case: PG-TDSON-8
Gate-source voltage: 20V
On-state resistance: 9.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
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5000+0.42 EUR
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IRF7324TRPBF IRF7324TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219F09AAF424F1A303005056AB0C4F&compId=irf7324pbf.pdf?ci_sign=7f4dd42a2e4cfa06767174805d80f49497471ba7 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY62146EV30LL-45BVXIT INFINEON TECHNOLOGIES Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Case: VFBGA48
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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CY62146EV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Case: TSOP44 II
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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CY62147EV18LL-55BVXIT INFINEON TECHNOLOGIES ?docID=45535 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 55ns; VFBGA48; parallel
Case: VFBGA48
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 55ns
Supply voltage: 1.65...2.25V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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CY62147EV30LL-45B2XIT INFINEON TECHNOLOGIES ?docID=45537 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Case: VFBGA48
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
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CY62147EV30LL-45BVXIT INFINEON TECHNOLOGIES CY62147EV30_MoBL_RevT_6-26-20.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Case: VFBGA48
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
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IRS4426SPBF IRS4426SPBF INFINEON TECHNOLOGIES IRSDS11546-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Topology: MOSFET half-bridge
Kind of package: tube
Operating temperature: -40...125°C
Output current: -3.3...2.3A
Turn-on time: 50ns
Turn-off time: 50ns
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Produkt ist nicht verfügbar
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IPP072N10N3GXKSA1 IPP072N10N3GXKSA1 INFINEON TECHNOLOGIES IPP072N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 448 Stücke:
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27+2.66 EUR
61+1.17 EUR
66+1.09 EUR
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IRF135S203 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A1883DA1C219E143&compId=irf135b203.pdf?ci_sign=447bf209f2421944bd8c23f1b6b7cb8ed05b6797 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; D2PAK
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.27µC
On-state resistance: 8.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 135V
Power dissipation: 441W
Drain current: 91A
Pulsed drain current: 512A
Produkt ist nicht verfügbar
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FM25VN10-GTR INFINEON TECHNOLOGIES Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AIMW120R080M1XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD099C064DB79BC60E1&compId=AIMW120R080M1.pdf?ci_sign=224fa7f7107a6dd3851015adf47da4270da17c9c Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 74A; 75W; TO247
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -7...20V
On-state resistance: 135mΩ
Drain current: 24A
Pulsed drain current: 74A
Power dissipation: 75W
Drain-source voltage: 1.2kV
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Case: TO247
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BAT5404E6327HTSA1 BAT5404E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT23
Mounting: SMD
Type of diode: Schottky rectifying
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. off-state voltage: 30V
Semiconductor structure: double series
auf Bestellung 1475 Stücke:
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228+0.31 EUR
295+0.24 EUR
341+0.21 EUR
487+0.15 EUR
569+0.13 EUR
1025+0.07 EUR
1085+0.066 EUR
Mindestbestellmenge: 228
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IRF8714TRPBFXTMA1 IRF8714TRPBFXTMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: 14A
auf Bestellung 3981 Stücke:
Lieferzeit 14-21 Tag (e)
80+0.9 EUR
129+0.56 EUR
192+0.37 EUR
250+0.32 EUR
500+0.29 EUR
1000+0.26 EUR
2000+0.25 EUR
Mindestbestellmenge: 80
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IRF8714TRPBF IRF8714TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AE10A1A317F1A303005056AB0C4F&compId=irf8714pbf.pdf?ci_sign=da5625da86eff355c7f4b92c8bd3a6e9cc9dad9d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Technology: HEXFET®
Produkt ist nicht verfügbar
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FB30R06W1E3BOMA1 FB30R06W1E3BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CDFDDC25858D3D7&compId=FB30R06W1E3.pdf?ci_sign=f0ac3378cf97532bc2bdcf462e9cd732b44ce192 Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Power dissipation: 115W
Max. off-state voltage: 0.6kV
Case: AG-EASY1B-1
Produkt ist nicht verfügbar
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FP30R06KE3BPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B8A273A207160D5&compId=FP30R06KE3.pdf?ci_sign=e0571df97a6a78c1c52fa24db5a6537a3a666fe4 Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EconoPIM™ 2
Mechanical mounting: screw
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Power dissipation: 125W
Max. off-state voltage: 0.6kV
Case: AG-ECONO2C
Application: Inverter
Produkt ist nicht verfügbar
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IDK08G120C5XTMA1 INFINEON TECHNOLOGIES Infineon-IDK08G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0d8a10f3e Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 8A; 126W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 14µA
Max. forward voltage: 2.25V
Load current: 8A
Max. forward impulse current: 60A
Power dissipation: 126W
Max. off-state voltage: 1.2kV
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Case: PG-TO263-2
Produkt ist nicht verfügbar
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IDH08G120C5XKSA1 IDH08G120C5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB93EB21A136FA8&compId=IDH08G120C5-DTE.pdf?ci_sign=df6c96976833079f18e68d5401ebac26eb3dbc1e Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; PG-TO220-2; Ir: 3uA
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 3µA
Max. forward voltage: 1.65V
Load current: 8A
Max. forward impulse current: 70A
Power dissipation: 126W
Max. off-state voltage: 1.2kV
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Case: PG-TO220-2
Produkt ist nicht verfügbar
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CYUSB3304-68LTXI INFINEON TECHNOLOGIES Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 260 Stücke:
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260+8.14 EUR
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CYUSB3314-88LTXI INFINEON TECHNOLOGIES Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: USB interfaces - integrated circuits
Description: IC: interface; HUB controller; QFN; 410mA; Standard,USB 3.0
Type of integrated circuit: interface
Case: QFN
Mounting: SMD
Version: Standard; USB 3.0
Integrated circuit features: USB HUB
Operating temperature: -40...85°C
DC supply current: 410mA
Data transfer rate: 12Mbps
Kind of integrated circuit: HUB controller
Frequency: 26MHz
auf Bestellung 735 Stücke:
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168+7.55 EUR
Mindestbestellmenge: 168
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CYUSB3302-68LTXI INFINEON TECHNOLOGIES Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: USB interfaces - integrated circuits
Description: IC: interface; HUB controller; QFN68; 526mA; Standard,USB 3.0
Type of integrated circuit: interface
Case: QFN68
Mounting: SMD
Version: Standard; USB 3.0
Integrated circuit features: USB HUB
Operating temperature: -40...85°C
DC supply current: 526mA
Data transfer rate: 12Mbps
Kind of integrated circuit: HUB controller
auf Bestellung 1280 Stücke:
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260+4.92 EUR
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CYUSB3314-BVXI INFINEON TECHNOLOGIES Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: USB interfaces - integrated circuits
Description: IC: ARM microprocessor
auf Bestellung 745 Stücke:
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429+13.43 EUR
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IRF100B202 IRF100B202 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBD7E4834504143&compId=IRF100B202.pdf?ci_sign=dc0c1d246a2fcd1cfdff23f0c329ab2539115b09 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 221W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 178 Stücke:
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35+2.09 EUR
56+1.29 EUR
100+1.14 EUR
Mindestbestellmenge: 35
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IRF2907ZSTRLPBF IRF2907ZSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC616ECF1315EA&compId=IRF2907ZSTRLPBF.pdf?ci_sign=105e8c88ae939208263b240ac48c9877e0de7db5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISC230N10NM6ATMA1 INFINEON TECHNOLOGIES Infineon-ISC230N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba4e6aba024a Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
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5000+0.68 EUR
Mindestbestellmenge: 5000
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ISZ230N10NM6ATMA1 INFINEON TECHNOLOGIES infineon-isz230n10nm6-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.75 EUR
Mindestbestellmenge: 5000
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TLE4264GHTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDACD19C0AF714A0D4&compId=TLE4264.pdf?ci_sign=b96a0eb8acdd5c11d7d915ae54db9f4c090238fd Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: PG-SOT223-4
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.16A
Voltage drop: 0.25V
Tolerance: ±2%
Output voltage: 5V
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
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TLE42644GHTMA1 INFINEON TECHNOLOGIES Infineon-TLE42644G-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf0159f94357773e18 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 5V; 100mA; PG-SOT223-4; SMD; ±3%; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Output voltage: 5V
Output current: 0.1A
Case: PG-SOT223-4
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±3%
Input voltage: 5.5...40V
Number of channels: 1
Protection: overheating OTP; short circuit protection SCP
Application: automotive industry
auf Bestellung 4000 Stücke:
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4000+1.12 EUR
Mindestbestellmenge: 4000
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IRFR4620TRLPBF IRFR4620TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C49CD67085F1A303005056AB0C4F&compId=irfr4620pbf.pdf?ci_sign=e4c12440734d4ce0004c05233e417a3999fb1ada Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2948 Stücke:
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38+1.93 EUR
45+1.62 EUR
51+1.42 EUR
100+1.29 EUR
250+1.12 EUR
500+1.03 EUR
1000+0.96 EUR
1500+0.94 EUR
Mindestbestellmenge: 26
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T1901N80TOHXPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9DDC3AE3FA1220D3&compId=T1901N.pdf?ci_sign=d739f38cc9ebb3d55674a5768e63ae1c4c8bcbdc Category: Button thyristors
Description: Thyristor: hockey-puck; 8kV; Ifmax: 3.3kA; 2.1kA; Igt: 350mA
Max. off-state voltage: 8kV
Load current: 2.1kA
Case: BG-T15035K-1
Max. forward impulse current: 67kA
Gate current: 350mA
Type of thyristor: hockey-puck
Kind of package: in-tray
Mounting: Press-Pack
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 3.3kA
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TT190N16SOFHPSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9BCD6B47C773D1&compId=TT190N16SOF.pdf?ci_sign=a72e6f77f7890384766d713fd7c6ce0a1724ce13 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 190A; BG-PB34SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 190A
Case: BG-PB34SB-1
Max. forward voltage: 1.52V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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STT1900N18P55XPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDACEEAB795F4EE0D4&compId=STT1900N18P55.pdf?ci_sign=6c68556c6782b4d6de9edb2926a00240e33ff8bd Category: Thyristor modules
Description: Module: thyristor; opposing; 1.8kV; 1.9kA; BG-PS55-1; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.8kV
Load current: 1.9kA
Case: BG-PS55-1
Max. forward voltage: 1.32V
Max. forward impulse current: 14kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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CY62177EV30LL-55BAXIT INFINEON TECHNOLOGIES Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62177EV18LL-70BAXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 70ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.25V DC
Produkt ist nicht verfügbar
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CY62177EV30LL-55ZXIT INFINEON TECHNOLOGIES Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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BAW101E6327HTSA1 BAW101E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB81D40F0D6E469&compId=BAW101E6327HTSA1.pdf?ci_sign=a7075f50f6a18d06ea45d2ff461141e6063d316e Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; Ufmax: 1.3V; 350mW
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Reverse recovery time: 1µs
Load current: 0.25A
Power dissipation: 0.35W
Max. forward voltage: 1.3V
Max. off-state voltage: 300V
Case: SOT143
Semiconductor structure: double independent
auf Bestellung 905 Stücke:
Lieferzeit 14-21 Tag (e)
420+0.17 EUR
515+0.14 EUR
575+0.12 EUR
625+0.11 EUR
Mindestbestellmenge: 420
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BFR380L3E6327 BFR380L3E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191DC0BC51BC11C&compId=BFR380L3E6327-dte.pdf?ci_sign=b5f19b4970edb76116e8ca3bf21f1178122d9548 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1
Type of transistor: NPN
Kind of transistor: RF
Mounting: SMD
Case: TSLP-3-1
Collector current: 80mA
Power dissipation: 0.38W
Collector-emitter voltage: 15V
Polarisation: bipolar
Frequency: 14GHz
Kind of package: reel; tape
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834+0.086 EUR
962+0.074 EUR
1009+0.071 EUR
1053+0.068 EUR
1060+0.067 EUR
1114+0.064 EUR
2500+0.062 EUR
Mindestbestellmenge: 834
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BFR380FH6327 BFR380FH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191DA5C602CE11C&compId=BFR380FH6327-dte.pdf?ci_sign=f554be1c0ad7074722cef881db18471561449346 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSFP-3
Type of transistor: NPN
Kind of transistor: RF
Mounting: SMD
Case: TSFP-3
Collector current: 80mA
Power dissipation: 0.38W
Collector-emitter voltage: 15V
Polarisation: bipolar
Frequency: 14GHz
Kind of package: reel; tape
auf Bestellung 5595 Stücke:
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197+0.36 EUR
329+0.22 EUR
443+0.16 EUR
468+0.15 EUR
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BFR380L3E6327XTMA1 INFINEON TECHNOLOGIES BFR380L3E6327XTMA1.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
15000+0.12 EUR
Mindestbestellmenge: 15000
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BTS3046SDLATMA1 INFINEON TECHNOLOGIES Infineon-BTS3046SDL-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad821c9e4c21 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.6A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 46mΩ
Operating temperature: -40...150°C
Technology: HITFET®
Output voltage: 60V
Produkt ist nicht verfügbar
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BTS3046SDRATMA1 INFINEON TECHNOLOGIES Infineon-BTS3046SDR-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad820ee64c1d Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.6A; Ch: 1; N-Channel; SMD; DPAK; 2÷10V
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK
On-state resistance: 46mΩ
Active logical level: low
Operating temperature: -40...150°C
Supply voltage: 2...10V
Integrated circuit features: thermal protection
Application: automotive industry
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2500+1.6 EUR
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BSP297H6327XTSA1 BSP297H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7214F38BEF10B&compId=BSP297H6327XTSA1.pdf?ci_sign=23b9a20498581d88c935bfc368a9b586ce7536a7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.66A; 1.8W; SOT223
Mounting: SMD
Drain-source voltage: 200V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SIPMOS™
Case: SOT223
On-state resistance: 1.8Ω
Power dissipation: 1.8W
Drain current: 0.66A
Gate-source voltage: ±20V
auf Bestellung 643 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
96+0.75 EUR
109+0.66 EUR
121+0.59 EUR
136+0.53 EUR
200+0.46 EUR
500+0.4 EUR
Mindestbestellmenge: 74
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BSL316CH6327XTSA1 BSL316CH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE594C272455EE04469&compId=BSL316CH6327XTSA1.pdf?ci_sign=14aa7da8dcaaad0b75d5e3d2295a1488451ee071 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 1.4/-1.5A; 0.5W
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Case: PG-TSOP-6
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.191/0.177Ω
Power dissipation: 0.5W
Drain current: 1.4/-1.5A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Kind of channel: enhancement
auf Bestellung 1532 Stücke:
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132+0.54 EUR
210+0.34 EUR
293+0.24 EUR
388+0.18 EUR
410+0.17 EUR
Mindestbestellmenge: 132
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BSP171PL6327 BSP171PL6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0474584F02CF1A6F5005056AB5A8F&compId=BSP171PL6327-Infineon.pdf?ci_sign=6587f20be49b313554fe5477ac1761805f46a096 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; 1.6W; SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.7A
Power dissipation: 1.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPD04P10PLGBTMA1 SPD04P10PLGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92C3CAFC5A71CC&compId=SPD04P10PLGBTMA1-DTE.pdf?ci_sign=d9c817ca1516000ee6cb62ebb60e341fefe042bc Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 38W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Kind of channel: enhancement
On-state resistance: 0.85Ω
Gate-source voltage: ±20V
Power dissipation: 38W
Produkt ist nicht verfügbar
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SPD04P10PGBTMA1 SPD04P10PGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92C1C7F21251CC&compId=SPD04P10PGBTMA1-dte.pdf?ci_sign=77b53744e2e2ff5514ebbc640b66d10e8c400bcc Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; 38W; PG-TO252-3
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -100V
Drain current: -4A
On-state resistance: 1Ω
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 38W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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SPD15P10PGBTMA1 SPD15P10PGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92CB143A3EF1CC&compId=SPD15P10PGBTMA1-DTE.pdf?ci_sign=736013e5bb92fe155ab016de6bc37846e538ead3 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.24Ω
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 128W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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TLE4251DATMA1 INFINEON TECHNOLOGIES Infineon-TLE4251-DataSheet-v03_10-EN.pdf?fileId=5546d46259d9a4bf0159f918181239ff Category: Integrated circuits - Unclassified
Description: TLE4251DATMA1
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.49 EUR
Mindestbestellmenge: 2500
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IPA70R600P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA70R600P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf80e8880d96 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 700V; 8.5A; 25W; TO220FP
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 700V
Drain current: 8.5A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: 16V
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 10.5nC
Kind of channel: enhancement
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.43 EUR
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BAS170WE6327HTSA1 BAS170WE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF2DB434A7C469&compId=BAS170WE6327HTSA1.pdf?ci_sign=09a3d1c84f239ca24bf73ff088ed2d4479c82759 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOD323
Mounting: SMD
Type of diode: Schottky switching
Load current: 70mA
Max. forward impulse current: 0.1A
Max. off-state voltage: 70V
Semiconductor structure: single diode
auf Bestellung 5037 Stücke:
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179+0.4 EUR
285+0.25 EUR
465+0.15 EUR
887+0.081 EUR
939+0.076 EUR
Mindestbestellmenge: 179
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IPD90N06S407ATMA2 INFINEON TECHNOLOGIES Infineon-IPD90N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff988150120386e3b5b0c87 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; Idm: 360A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Pulsed drain current: 360A
Power dissipation: 79W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB090N06N3GATMA1 IPB090N06N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A69922D5CBCDC11C&compId=IPB090N06N3G-DTE.pdf?ci_sign=85e52905022feec3f6e3edad1b5ff335276f5c10 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD90N06S4L03ATMA2 INFINEON TECHNOLOGIES Infineon-IPD90N06S4L_03-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203869e3b30c7d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 90A; 150W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 150W
Case: DPAK; TO252
Gate-source voltage: 16V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
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2500+1.33 EUR
Mindestbestellmenge: 2500
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IPD90N06S404ATMA2 INFINEON TECHNOLOGIES INFNS13309-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.16 EUR
Mindestbestellmenge: 2500
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2EDN8524FXTMA1 2EDN8524FXTMA1 INFINEON TECHNOLOGIES Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Case: PG-DSO-8
Technology: EiceDRIVER™
Kind of package: reel; tape
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V
Voltage class: 20V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Protection: undervoltage UVP
auf Bestellung 2495 Stücke:
Lieferzeit 14-21 Tag (e)
82+0.87 EUR
91+0.79 EUR
103+0.7 EUR
500+0.62 EUR
1000+0.58 EUR
Mindestbestellmenge: 82
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IR2118PBF IR2118PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Mounting: THT
Operating temperature: -40...125°C
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Turn-off time: 105ns
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Case: DIP8
Voltage class: 600V
Kind of package: tube
Turn-on time: 125ns
Produkt ist nicht verfügbar
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FP15R12W1T4 FP15R12W1T4 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586989576C81DA469&compId=FP15R12W1T4.pdf?ci_sign=e7ebf1ec6287b7a92d36901e9623c93efbd142e0 Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: AG-EASY1B-1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 130W
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Application: Inverter
Produkt ist nicht verfügbar
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CY8C5688AXI-LP099 INFINEON TECHNOLOGIES download Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 67MHz; Core: 32-bit
Mounting: SMD
Clock frequency: 67MHz
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
auf Bestellung 745 Stücke:
Lieferzeit 14-21 Tag (e)
90+15.27 EUR
Mindestbestellmenge: 90
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BSC112N06LDATMA1 Infineon-BSC112N06LD-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905f559210ce6
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: BSC112N06LDATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.73 EUR
Mindestbestellmenge: 5000
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BSC094N06LS5ATMA1 Infineon-BSC094N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5ce52407ba3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 47A; 36W; PG-TDSON-8; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 47A
Power dissipation: 36W
Case: PG-TDSON-8
Gate-source voltage: 20V
On-state resistance: 9.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.42 EUR
Mindestbestellmenge: 5000
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IRF7324TRPBF pVersion=0046&contRep=ZT&docId=E2219F09AAF424F1A303005056AB0C4F&compId=irf7324pbf.pdf?ci_sign=7f4dd42a2e4cfa06767174805d80f49497471ba7
IRF7324TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY62146EV30LL-45BVXIT Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Case: VFBGA48
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
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CY62146EV30LL-45ZSXIT Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Case: TSOP44 II
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
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CY62147EV18LL-55BVXIT ?docID=45535
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 55ns; VFBGA48; parallel
Case: VFBGA48
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 55ns
Supply voltage: 1.65...2.25V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
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CY62147EV30LL-45B2XIT ?docID=45537
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Case: VFBGA48
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
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CY62147EV30LL-45BVXIT CY62147EV30_MoBL_RevT_6-26-20.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Case: VFBGA48
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
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IRS4426SPBF IRSDS11546-1.pdf?t.download=true&u=5oefqw
IRS4426SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Topology: MOSFET half-bridge
Kind of package: tube
Operating temperature: -40...125°C
Output current: -3.3...2.3A
Turn-on time: 50ns
Turn-off time: 50ns
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Produkt ist nicht verfügbar
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IPP072N10N3GXKSA1 IPP072N10N3G-DTE.pdf
IPP072N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 448 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.66 EUR
61+1.17 EUR
66+1.09 EUR
Mindestbestellmenge: 27
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IRF135S203 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A1883DA1C219E143&compId=irf135b203.pdf?ci_sign=447bf209f2421944bd8c23f1b6b7cb8ed05b6797
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; D2PAK
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.27µC
On-state resistance: 8.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 135V
Power dissipation: 441W
Drain current: 91A
Pulsed drain current: 512A
Produkt ist nicht verfügbar
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FM25VN10-GTR Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AIMW120R080M1XKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD099C064DB79BC60E1&compId=AIMW120R080M1.pdf?ci_sign=224fa7f7107a6dd3851015adf47da4270da17c9c
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 74A; 75W; TO247
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -7...20V
On-state resistance: 135mΩ
Drain current: 24A
Pulsed drain current: 74A
Power dissipation: 75W
Drain-source voltage: 1.2kV
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Case: TO247
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT5404E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16
BAT5404E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT23
Mounting: SMD
Type of diode: Schottky rectifying
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. off-state voltage: 30V
Semiconductor structure: double series
auf Bestellung 1475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
295+0.24 EUR
341+0.21 EUR
487+0.15 EUR
569+0.13 EUR
1025+0.07 EUR
1085+0.066 EUR
Mindestbestellmenge: 228
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IRF8714TRPBFXTMA1
IRF8714TRPBFXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: 14A
auf Bestellung 3981 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
129+0.56 EUR
192+0.37 EUR
250+0.32 EUR
500+0.29 EUR
1000+0.26 EUR
2000+0.25 EUR
Mindestbestellmenge: 80
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IRF8714TRPBF pVersion=0046&contRep=ZT&docId=E221AE10A1A317F1A303005056AB0C4F&compId=irf8714pbf.pdf?ci_sign=da5625da86eff355c7f4b92c8bd3a6e9cc9dad9d
IRF8714TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Technology: HEXFET®
Produkt ist nicht verfügbar
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FB30R06W1E3BOMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CDFDDC25858D3D7&compId=FB30R06W1E3.pdf?ci_sign=f0ac3378cf97532bc2bdcf462e9cd732b44ce192
FB30R06W1E3BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Power dissipation: 115W
Max. off-state voltage: 0.6kV
Case: AG-EASY1B-1
Produkt ist nicht verfügbar
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FP30R06KE3BPSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B8A273A207160D5&compId=FP30R06KE3.pdf?ci_sign=e0571df97a6a78c1c52fa24db5a6537a3a666fe4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EconoPIM™ 2
Mechanical mounting: screw
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Power dissipation: 125W
Max. off-state voltage: 0.6kV
Case: AG-ECONO2C
Application: Inverter
Produkt ist nicht verfügbar
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IDK08G120C5XTMA1 Infineon-IDK08G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0d8a10f3e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 8A; 126W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 14µA
Max. forward voltage: 2.25V
Load current: 8A
Max. forward impulse current: 60A
Power dissipation: 126W
Max. off-state voltage: 1.2kV
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Case: PG-TO263-2
Produkt ist nicht verfügbar
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IDH08G120C5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB93EB21A136FA8&compId=IDH08G120C5-DTE.pdf?ci_sign=df6c96976833079f18e68d5401ebac26eb3dbc1e
IDH08G120C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; PG-TO220-2; Ir: 3uA
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 3µA
Max. forward voltage: 1.65V
Load current: 8A
Max. forward impulse current: 70A
Power dissipation: 126W
Max. off-state voltage: 1.2kV
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Case: PG-TO220-2
Produkt ist nicht verfügbar
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CYUSB3304-68LTXI Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
260+8.14 EUR
Mindestbestellmenge: 260
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CYUSB3314-88LTXI Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; HUB controller; QFN; 410mA; Standard,USB 3.0
Type of integrated circuit: interface
Case: QFN
Mounting: SMD
Version: Standard; USB 3.0
Integrated circuit features: USB HUB
Operating temperature: -40...85°C
DC supply current: 410mA
Data transfer rate: 12Mbps
Kind of integrated circuit: HUB controller
Frequency: 26MHz
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
168+7.55 EUR
Mindestbestellmenge: 168
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CYUSB3302-68LTXI Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; HUB controller; QFN68; 526mA; Standard,USB 3.0
Type of integrated circuit: interface
Case: QFN68
Mounting: SMD
Version: Standard; USB 3.0
Integrated circuit features: USB HUB
Operating temperature: -40...85°C
DC supply current: 526mA
Data transfer rate: 12Mbps
Kind of integrated circuit: HUB controller
auf Bestellung 1280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
260+4.92 EUR
Mindestbestellmenge: 260
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CYUSB3314-BVXI Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: ARM microprocessor
auf Bestellung 745 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
429+13.43 EUR
Mindestbestellmenge: 429
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IRF100B202 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBD7E4834504143&compId=IRF100B202.pdf?ci_sign=dc0c1d246a2fcd1cfdff23f0c329ab2539115b09
IRF100B202
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 221W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.09 EUR
56+1.29 EUR
100+1.14 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRF2907ZSTRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC616ECF1315EA&compId=IRF2907ZSTRLPBF.pdf?ci_sign=105e8c88ae939208263b240ac48c9877e0de7db5
IRF2907ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISC230N10NM6ATMA1 Infineon-ISC230N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba4e6aba024a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.68 EUR
Mindestbestellmenge: 5000
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ISZ230N10NM6ATMA1 infineon-isz230n10nm6-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.75 EUR
Mindestbestellmenge: 5000
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TLE4264GHTSA1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDACD19C0AF714A0D4&compId=TLE4264.pdf?ci_sign=b96a0eb8acdd5c11d7d915ae54db9f4c090238fd
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: PG-SOT223-4
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.16A
Voltage drop: 0.25V
Tolerance: ±2%
Output voltage: 5V
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
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TLE42644GHTMA1 Infineon-TLE42644G-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf0159f94357773e18
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 5V; 100mA; PG-SOT223-4; SMD; ±3%; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Output voltage: 5V
Output current: 0.1A
Case: PG-SOT223-4
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±3%
Input voltage: 5.5...40V
Number of channels: 1
Protection: overheating OTP; short circuit protection SCP
Application: automotive industry
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+1.12 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
IRFR4620TRLPBF pVersion=0046&contRep=ZT&docId=E221C49CD67085F1A303005056AB0C4F&compId=irfr4620pbf.pdf?ci_sign=e4c12440734d4ce0004c05233e417a3999fb1ada
IRFR4620TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2948 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.8 EUR
38+1.93 EUR
45+1.62 EUR
51+1.42 EUR
100+1.29 EUR
250+1.12 EUR
500+1.03 EUR
1000+0.96 EUR
1500+0.94 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
T1901N80TOHXPSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9DDC3AE3FA1220D3&compId=T1901N.pdf?ci_sign=d739f38cc9ebb3d55674a5768e63ae1c4c8bcbdc
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 8kV; Ifmax: 3.3kA; 2.1kA; Igt: 350mA
Max. off-state voltage: 8kV
Load current: 2.1kA
Case: BG-T15035K-1
Max. forward impulse current: 67kA
Gate current: 350mA
Type of thyristor: hockey-puck
Kind of package: in-tray
Mounting: Press-Pack
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 3.3kA
Produkt ist nicht verfügbar
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TT190N16SOFHPSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9BCD6B47C773D1&compId=TT190N16SOF.pdf?ci_sign=a72e6f77f7890384766d713fd7c6ce0a1724ce13
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 190A; BG-PB34SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 190A
Case: BG-PB34SB-1
Max. forward voltage: 1.52V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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STT1900N18P55XPSA1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDACEEAB795F4EE0D4&compId=STT1900N18P55.pdf?ci_sign=6c68556c6782b4d6de9edb2926a00240e33ff8bd
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.8kV; 1.9kA; BG-PS55-1; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.8kV
Load current: 1.9kA
Case: BG-PS55-1
Max. forward voltage: 1.32V
Max. forward impulse current: 14kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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CY62177EV30LL-55BAXIT Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62177EV18LL-70BAXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 70ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62177EV30LL-55ZXIT Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAW101E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB81D40F0D6E469&compId=BAW101E6327HTSA1.pdf?ci_sign=a7075f50f6a18d06ea45d2ff461141e6063d316e
BAW101E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; Ufmax: 1.3V; 350mW
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Reverse recovery time: 1µs
Load current: 0.25A
Power dissipation: 0.35W
Max. forward voltage: 1.3V
Max. off-state voltage: 300V
Case: SOT143
Semiconductor structure: double independent
auf Bestellung 905 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
420+0.17 EUR
515+0.14 EUR
575+0.12 EUR
625+0.11 EUR
Mindestbestellmenge: 420
Im Einkaufswagen  Stück im Wert von  UAH
BFR380L3E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191DC0BC51BC11C&compId=BFR380L3E6327-dte.pdf?ci_sign=b5f19b4970edb76116e8ca3bf21f1178122d9548
BFR380L3E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1
Type of transistor: NPN
Kind of transistor: RF
Mounting: SMD
Case: TSLP-3-1
Collector current: 80mA
Power dissipation: 0.38W
Collector-emitter voltage: 15V
Polarisation: bipolar
Frequency: 14GHz
Kind of package: reel; tape
auf Bestellung 11862 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
834+0.086 EUR
962+0.074 EUR
1009+0.071 EUR
1053+0.068 EUR
1060+0.067 EUR
1114+0.064 EUR
2500+0.062 EUR
Mindestbestellmenge: 834
Im Einkaufswagen  Stück im Wert von  UAH
BFR380FH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191DA5C602CE11C&compId=BFR380FH6327-dte.pdf?ci_sign=f554be1c0ad7074722cef881db18471561449346
BFR380FH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSFP-3
Type of transistor: NPN
Kind of transistor: RF
Mounting: SMD
Case: TSFP-3
Collector current: 80mA
Power dissipation: 0.38W
Collector-emitter voltage: 15V
Polarisation: bipolar
Frequency: 14GHz
Kind of package: reel; tape
auf Bestellung 5595 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
197+0.36 EUR
329+0.22 EUR
443+0.16 EUR
468+0.15 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
BFR380L3E6327XTMA1 BFR380L3E6327XTMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.12 EUR
Mindestbestellmenge: 15000
Im Einkaufswagen  Stück im Wert von  UAH
BTS3046SDLATMA1 Infineon-BTS3046SDL-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad821c9e4c21
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.6A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 46mΩ
Operating temperature: -40...150°C
Technology: HITFET®
Output voltage: 60V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS3046SDRATMA1 Infineon-BTS3046SDR-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad820ee64c1d
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.6A; Ch: 1; N-Channel; SMD; DPAK; 2÷10V
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK
On-state resistance: 46mΩ
Active logical level: low
Operating temperature: -40...150°C
Supply voltage: 2...10V
Integrated circuit features: thermal protection
Application: automotive industry
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.6 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
BSP297H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7214F38BEF10B&compId=BSP297H6327XTSA1.pdf?ci_sign=23b9a20498581d88c935bfc368a9b586ce7536a7
BSP297H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.66A; 1.8W; SOT223
Mounting: SMD
Drain-source voltage: 200V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SIPMOS™
Case: SOT223
On-state resistance: 1.8Ω
Power dissipation: 1.8W
Drain current: 0.66A
Gate-source voltage: ±20V
auf Bestellung 643 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
96+0.75 EUR
109+0.66 EUR
121+0.59 EUR
136+0.53 EUR
200+0.46 EUR
500+0.4 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
BSL316CH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE594C272455EE04469&compId=BSL316CH6327XTSA1.pdf?ci_sign=14aa7da8dcaaad0b75d5e3d2295a1488451ee071
BSL316CH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 1.4/-1.5A; 0.5W
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Case: PG-TSOP-6
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.191/0.177Ω
Power dissipation: 0.5W
Drain current: 1.4/-1.5A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Kind of channel: enhancement
auf Bestellung 1532 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
210+0.34 EUR
293+0.24 EUR
388+0.18 EUR
410+0.17 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
BSP171PL6327 pVersion=0046&contRep=ZT&docId=E1C0474584F02CF1A6F5005056AB5A8F&compId=BSP171PL6327-Infineon.pdf?ci_sign=6587f20be49b313554fe5477ac1761805f46a096
BSP171PL6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; 1.6W; SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.7A
Power dissipation: 1.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPD04P10PLGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92C3CAFC5A71CC&compId=SPD04P10PLGBTMA1-DTE.pdf?ci_sign=d9c817ca1516000ee6cb62ebb60e341fefe042bc
SPD04P10PLGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 38W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Kind of channel: enhancement
On-state resistance: 0.85Ω
Gate-source voltage: ±20V
Power dissipation: 38W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD04P10PGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92C1C7F21251CC&compId=SPD04P10PGBTMA1-dte.pdf?ci_sign=77b53744e2e2ff5514ebbc640b66d10e8c400bcc
SPD04P10PGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; 38W; PG-TO252-3
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -100V
Drain current: -4A
On-state resistance: 1Ω
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 38W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD15P10PGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92CB143A3EF1CC&compId=SPD15P10PGBTMA1-DTE.pdf?ci_sign=736013e5bb92fe155ab016de6bc37846e538ead3
SPD15P10PGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.24Ω
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 128W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4251DATMA1 Infineon-TLE4251-DataSheet-v03_10-EN.pdf?fileId=5546d46259d9a4bf0159f918181239ff
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: TLE4251DATMA1
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.49 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPA70R600P7SXKSA1 Infineon-IPA70R600P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf80e8880d96
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 700V; 8.5A; 25W; TO220FP
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 700V
Drain current: 8.5A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: 16V
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 10.5nC
Kind of channel: enhancement
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.43 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
BAS170WE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF2DB434A7C469&compId=BAS170WE6327HTSA1.pdf?ci_sign=09a3d1c84f239ca24bf73ff088ed2d4479c82759
BAS170WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOD323
Mounting: SMD
Type of diode: Schottky switching
Load current: 70mA
Max. forward impulse current: 0.1A
Max. off-state voltage: 70V
Semiconductor structure: single diode
auf Bestellung 5037 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
285+0.25 EUR
465+0.15 EUR
887+0.081 EUR
939+0.076 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
IPD90N06S407ATMA2 Infineon-IPD90N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff988150120386e3b5b0c87
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; Idm: 360A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Pulsed drain current: 360A
Power dissipation: 79W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB090N06N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A69922D5CBCDC11C&compId=IPB090N06N3G-DTE.pdf?ci_sign=85e52905022feec3f6e3edad1b5ff335276f5c10
IPB090N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD90N06S4L03ATMA2 Infineon-IPD90N06S4L_03-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203869e3b30c7d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 90A; 150W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 150W
Case: DPAK; TO252
Gate-source voltage: 16V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.33 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD90N06S404ATMA2 INFNS13309-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.16 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
2EDN8524FXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN8524FXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Case: PG-DSO-8
Technology: EiceDRIVER™
Kind of package: reel; tape
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V
Voltage class: 20V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Protection: undervoltage UVP
auf Bestellung 2495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
91+0.79 EUR
103+0.7 EUR
500+0.62 EUR
1000+0.58 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
IR2118PBF pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645
IR2118PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Mounting: THT
Operating temperature: -40...125°C
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Turn-off time: 105ns
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Case: DIP8
Voltage class: 600V
Kind of package: tube
Turn-on time: 125ns
Produkt ist nicht verfügbar
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FP15R12W1T4 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586989576C81DA469&compId=FP15R12W1T4.pdf?ci_sign=e7ebf1ec6287b7a92d36901e9623c93efbd142e0
FP15R12W1T4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: AG-EASY1B-1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 130W
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Application: Inverter
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CY8C5688AXI-LP099 download
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 67MHz; Core: 32-bit
Mounting: SMD
Clock frequency: 67MHz
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
auf Bestellung 745 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+15.27 EUR
Mindestbestellmenge: 90
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