Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149582) > Seite 2493 nach 2494
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IRF9393TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -7.3A; 1.6W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -7.3A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±25V On-state resistance: 19.4mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel Kind of channel: enhancement |
auf Bestellung 1143 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7241TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -40V; -6.2A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -6.2A Power dissipation: 2.5W Case: SO8 On-state resistance: 41mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 1245 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7853TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.3A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 3900 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF8714TRPBFXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRF8721TRPBFXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRF8910TRPBFXTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 10A; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 10A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRF7820TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 3.7A; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3.7A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IRF9362TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -8A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF7726TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.79W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Power dissipation: 1.79W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IPD90P04P405ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB4137PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 300V Drain current: 38A Power dissipation: 341W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: THT Gate charge: 83nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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TLE4913HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Sensor: Hall; omnipolar; SC59; -5÷5mT; Usup: 2.4÷5.5VDC; SMT Operating temperature: -40...85°C Case: SC59 Supply voltage: 2.4...5.5V DC Kind of sensor: omnipolar Type of sensor: Hall Range of detectable magnetic field: -5...5mT Mounting: SMT |
Produkt ist nicht verfügbar |
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HFA15TB60PBF | INFINEON TECHNOLOGIES |
![]() Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; Ufmax: 1.7V; 29W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Kind of package: tube Case: TO220AC Max. forward voltage: 1.7V Reverse recovery time: 74ns Power dissipation: 29W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IRFS4410ZTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 69A Pulsed drain current: 390A Power dissipation: 230W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IRF8721TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Power dissipation: 2.5W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BGX50AE6327 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 50V; 0.14A; SOT143; 210mW; reel,tape Max. off-state voltage: 50V Load current: 0.14A Case: SOT143 Semiconductor structure: bridge rectifier Features of semiconductor devices: fast switching Mounting: SMD Power dissipation: 0.21W Kind of package: reel; tape Type of diode: switching |
auf Bestellung 1086 Stücke: Lieferzeit 14-21 Tag (e) |
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IDH02G120C5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; PG-TO220-2; 75W Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: PG-TO220-2 Kind of package: tube Max. forward voltage: 1.4V Max. forward impulse current: 37A Leakage current: 1.2µA Power dissipation: 75W Technology: CoolSiC™ 5G; SiC |
auf Bestellung 479 Stücke: Lieferzeit 14-21 Tag (e) |
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IMZA65R048M1HXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 100A Power dissipation: 125W Case: TO247-4 Gate-source voltage: -5...23V On-state resistance: 63mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IMZA65R072M1HXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Pulsed drain current: 69A Power dissipation: 96W Case: TO247-4 Gate-source voltage: -5...23V On-state resistance: 94mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRFP4568PBFXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 1757 Stücke: Lieferzeit 14-21 Tag (e) |
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TT251N12KOFHPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; double series; 1.2kV; 251A; BG-PB50-1; screw Case: BG-PB50-1 Max. off-state voltage: 1.2kV Max. forward voltage: 1.4V Load current: 251A Semiconductor structure: double series Gate current: 300mA Max. forward impulse current: 9.1kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of semiconductor module: thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPP041N12N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3 Case: PG-TO220-3 Drain-source voltage: 120V Drain current: 120A On-state resistance: 4.1mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPI041N12N3GAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3 Case: PG-TO262-3 Drain-source voltage: 120V Drain current: 120A On-state resistance: 4.1mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
SPD03N50C3ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Kind of channel: enhancement Power dissipation: 38W Technology: CoolMOS™ Pulsed drain current: 9.6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SPP08N80C3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 82 Stücke: Lieferzeit 14-21 Tag (e) |
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6EDL04N02PR | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: TSSOP28 Output current: -0.375...0.24A Number of channels: 6 Supply voltage: 10...17.5V Mounting: SMD Kind of package: reel; tape Protection: anti-overload OPP; undervoltage UVP Integrated circuit features: integrated bootstrap functionality Technology: EiceDRIVER™ Topology: MOSFET three-phase bridge Voltage class: 200V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IR2085STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Output current: -1...1A Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 100V Operating temperature: -40...125°C Power: 1W Supply voltage: 10...15V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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AUIR2085STR | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Output current: -1...1A Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 100V Power: 625mW Supply voltage: 10...15V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSC035N10NS5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 156W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSO207PHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8 Mounting: SMD On-state resistance: 45mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±12V Drain-source voltage: -20V Drain current: -5A |
auf Bestellung 2211 Stücke: Lieferzeit 14-21 Tag (e) |
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BSO211PHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8 Mounting: SMD On-state resistance: 67mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±12V Drain-source voltage: -20V Drain current: -4.6A |
auf Bestellung 2420 Stücke: Lieferzeit 14-21 Tag (e) |
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BSO201SPHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -12A; 1.6W; PG-DSO-8 Mounting: SMD On-state resistance: 20mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±12V Drain-source voltage: -20V Drain current: -12A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSO203PHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8 Mounting: SMD On-state resistance: 21mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±12V Drain-source voltage: -20V Drain current: -7A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSO203SPHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8 Mounting: SMD On-state resistance: 21mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±12V Drain-source voltage: -20V Drain current: -7A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSO080P03SHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8 Mounting: SMD On-state resistance: 8mΩ Type of transistor: P-MOSFET Power dissipation: 1.79W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±25V Drain-source voltage: -30V Drain current: -12.6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSO110N03MSGXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8 Mounting: SMD On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 1.56W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 12.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSO303SPHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; 1.56W; PG-DSO-8 Mounting: SMD On-state resistance: 21mΩ Type of transistor: P-MOSFET Power dissipation: 1.56W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: -30V Drain current: -7.2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSO033N03MSGXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 1.56W; PG-DSO-8 Mounting: SMD On-state resistance: 3.8mΩ Type of transistor: N-MOSFET Power dissipation: 1.56W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 22A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSO301SPHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8 Mounting: SMD On-state resistance: 8mΩ Type of transistor: P-MOSFET Power dissipation: 1.79W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: -30V Drain current: -12.6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSO613SPVGXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8 Mounting: SMD On-state resistance: 0.13Ω Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Case: SO8 Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -13.8A Drain-source voltage: -60V Drain current: -3.44A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
BFR183E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR2607ZTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 45A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 45A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
XMC750 WATT MOTOR CONTROL KIT | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: ARM Infineon; XMC1300,XMC4400; Comp: XMC1300,XMC4400 Type of development kit: ARM Infineon Family: XMC1300; XMC4400 Kit contents: board with XMC1300 microcontroller; board with XMC4400 microcontroller; three-phase inverter Components: XMC1300; XMC4400 Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2 Kind of connector: pin strips; screw; USB B micro Application: 3-phase BLDC motors Number of add-on connectors: 1 Kind of architecture: Cortex M4; Cortex M0 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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BAT5404WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 230mW Type of diode: Schottky rectifying Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Max. forward impulse current: 0.6A Power dissipation: 0.23W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IRF7328TRPBFXTMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: P-MOSFET |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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TLE92108231QXXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; motor controller; VQFN48; 100mA; 6÷28VDC Operating voltage: 6...28V DC Output current: 0.1A Type of integrated circuit: driver Kind of integrated circuit: motor controller Mounting: SMD Case: VQFN48 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLE92108232QXXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; motor controller; VQFN48; 100mA; 6÷28VDC Operating voltage: 6...28V DC Output current: 0.1A Type of integrated circuit: driver Kind of integrated circuit: motor controller Mounting: SMD Case: VQFN48 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
ETD630N16P60HPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: diode-thyristor; 1.6kV; 635A; BG-PB60ECO-1; Ufmax: 1.37V Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 635A Case: BG-PB60ECO-1 Max. forward voltage: 1.37V Max. forward impulse current: 19.8kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Max. load current: 700A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
ETD630N18P60HPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: diode-thyristor; 1.8kV; 635A; BG-PB60ECO-1; Ufmax: 1.37V Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 635A Case: BG-PB60ECO-1 Max. forward voltage: 1.37V Max. forward impulse current: 19.8kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Max. load current: 700A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
ETT630N16P60HPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; double series; 1.6kV; 635A; BG-PB60ECO-1; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 635A Case: BG-PB60ECO-1 Max. forward voltage: 1.37V Max. forward impulse current: 19.8kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IPB037N06N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 188W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF7831TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPP410N30NAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 44A; 300W; PG-TO220-3 Drain current: 44A On-state resistance: 41mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: PG-TO220-3 Drain-source voltage: 300V |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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CY7C1354C-166AXC | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C Operating temperature: 0...70°C Frequency: 166MHz Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Kind of package: in-tray Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Case: TQFP100 Supply voltage: 3.135...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
CY7C1354C-166AXCT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C Operating temperature: 0...70°C Frequency: 166MHz Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Kind of package: reel; tape Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Case: TQFP100 Supply voltage: 3.135...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
CY7C1354C-166AXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C Operating temperature: -40...85°C Frequency: 166MHz Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Kind of package: in-tray Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Case: TQFP100 Supply voltage: 3.135...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
CY7C1354C-166AXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C Operating temperature: -40...85°C Frequency: 166MHz Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Kind of package: reel; tape Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Case: TQFP100 Supply voltage: 3.135...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
CY7C1356C-166AXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; TQFP100; parallel; -40÷85°C Operating temperature: -40...85°C Frequency: 166MHz Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx18bit Kind of package: in-tray Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Case: TQFP100 Supply voltage: 3.135...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
CY7C1360C-166AXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C Operating temperature: -40...85°C Frequency: 166MHz Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Kind of package: in-tray Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Case: TQFP100 Supply voltage: 3.135...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRF3805STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9393TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.3A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.3A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 19.4mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.3A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.3A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 19.4mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1143 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
112+ | 0.64 EUR |
123+ | 0.58 EUR |
153+ | 0.47 EUR |
228+ | 0.31 EUR |
241+ | 0.30 EUR |
500+ | 0.29 EUR |
IRF7241TRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.2A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.2A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1245 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
58+ | 1.24 EUR |
72+ | 1.00 EUR |
86+ | 0.84 EUR |
109+ | 0.66 EUR |
115+ | 0.62 EUR |
120+ | 0.60 EUR |
IRF7853TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3900 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.89 EUR |
56+ | 1.28 EUR |
111+ | 0.65 EUR |
117+ | 0.61 EUR |
2000+ | 0.59 EUR |
IRF8714TRPBFXTMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF8721TRPBFXTMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF8910TRPBFXTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF7820TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.7A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.7A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.7A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.7A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF9362TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF7726TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.79W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.79W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.79W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.79W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD90P04P405ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.30 EUR |
IRFB4137PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 341W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 341W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.25 EUR |
23+ | 3.10 EUR |
TLE4913HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SC59; -5÷5mT; Usup: 2.4÷5.5VDC; SMT
Operating temperature: -40...85°C
Case: SC59
Supply voltage: 2.4...5.5V DC
Kind of sensor: omnipolar
Type of sensor: Hall
Range of detectable magnetic field: -5...5mT
Mounting: SMT
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SC59; -5÷5mT; Usup: 2.4÷5.5VDC; SMT
Operating temperature: -40...85°C
Case: SC59
Supply voltage: 2.4...5.5V DC
Kind of sensor: omnipolar
Type of sensor: Hall
Range of detectable magnetic field: -5...5mT
Mounting: SMT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
HFA15TB60PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; Ufmax: 1.7V; 29W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 74ns
Power dissipation: 29W
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; Ufmax: 1.7V; 29W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 74ns
Power dissipation: 29W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFS4410ZTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 69A
Pulsed drain current: 390A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 69A
Pulsed drain current: 390A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF8721TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2.5W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2.5W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BGX50AE6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.14A; SOT143; 210mW; reel,tape
Max. off-state voltage: 50V
Load current: 0.14A
Case: SOT143
Semiconductor structure: bridge rectifier
Features of semiconductor devices: fast switching
Mounting: SMD
Power dissipation: 0.21W
Kind of package: reel; tape
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.14A; SOT143; 210mW; reel,tape
Max. off-state voltage: 50V
Load current: 0.14A
Case: SOT143
Semiconductor structure: bridge rectifier
Features of semiconductor devices: fast switching
Mounting: SMD
Power dissipation: 0.21W
Kind of package: reel; tape
Type of diode: switching
auf Bestellung 1086 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
414+ | 0.17 EUR |
468+ | 0.15 EUR |
603+ | 0.12 EUR |
642+ | 0.11 EUR |
IDH02G120C5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; PG-TO220-2; 75W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Max. forward voltage: 1.4V
Max. forward impulse current: 37A
Leakage current: 1.2µA
Power dissipation: 75W
Technology: CoolSiC™ 5G; SiC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; PG-TO220-2; 75W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Max. forward voltage: 1.4V
Max. forward impulse current: 37A
Leakage current: 1.2µA
Power dissipation: 75W
Technology: CoolSiC™ 5G; SiC
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.55 EUR |
35+ | 2.10 EUR |
36+ | 1.99 EUR |
250+ | 1.96 EUR |
IMZA65R048M1HXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IMZA65R072M1HXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 69A
Power dissipation: 96W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 69A
Power dissipation: 96W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFP4568PBFXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1757 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 4.10 EUR |
TT251N12KOFHPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 251A; BG-PB50-1; screw
Case: BG-PB50-1
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 251A
Semiconductor structure: double series
Gate current: 300mA
Max. forward impulse current: 9.1kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 251A; BG-PB50-1; screw
Case: BG-PB50-1
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 251A
Semiconductor structure: double series
Gate current: 300mA
Max. forward impulse current: 9.1kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
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IPP041N12N3GXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
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IPI041N12N3GAKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Case: PG-TO262-3
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Case: PG-TO262-3
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
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SPD03N50C3ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 38W
Technology: CoolMOS™
Pulsed drain current: 9.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 38W
Technology: CoolMOS™
Pulsed drain current: 9.6A
Produkt ist nicht verfügbar
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SPP08N80C3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.64 EUR |
6EDL04N02PR |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: TSSOP28
Output current: -0.375...0.24A
Number of channels: 6
Supply voltage: 10...17.5V
Mounting: SMD
Kind of package: reel; tape
Protection: anti-overload OPP; undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Technology: EiceDRIVER™
Topology: MOSFET three-phase bridge
Voltage class: 200V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: TSSOP28
Output current: -0.375...0.24A
Number of channels: 6
Supply voltage: 10...17.5V
Mounting: SMD
Kind of package: reel; tape
Protection: anti-overload OPP; undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Technology: EiceDRIVER™
Topology: MOSFET three-phase bridge
Voltage class: 200V
Produkt ist nicht verfügbar
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IR2085STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Output current: -1...1A
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 100V
Operating temperature: -40...125°C
Power: 1W
Supply voltage: 10...15V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Output current: -1...1A
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 100V
Operating temperature: -40...125°C
Power: 1W
Supply voltage: 10...15V DC
Produkt ist nicht verfügbar
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AUIR2085STR |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Output current: -1...1A
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 100V
Power: 625mW
Supply voltage: 10...15V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Output current: -1...1A
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 100V
Power: 625mW
Supply voltage: 10...15V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
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BSC035N10NS5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BSO207PHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -5A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -5A
auf Bestellung 2211 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
222+ | 0.32 EUR |
BSO211PHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -4.6A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -4.6A
auf Bestellung 2420 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
190+ | 0.38 EUR |
205+ | 0.35 EUR |
224+ | 0.32 EUR |
236+ | 0.30 EUR |
BSO201SPHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 20mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -12A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 20mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -12A
Produkt ist nicht verfügbar
Im Einkaufswagen
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BSO203PHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -7A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -7A
Produkt ist nicht verfügbar
Im Einkaufswagen
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BSO203SPHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -7A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -7A
Produkt ist nicht verfügbar
Im Einkaufswagen
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BSO080P03SHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.79W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±25V
Drain-source voltage: -30V
Drain current: -12.6A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.79W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±25V
Drain-source voltage: -30V
Drain current: -12.6A
Produkt ist nicht verfügbar
Im Einkaufswagen
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BSO110N03MSGXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 12.1A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 12.1A
Produkt ist nicht verfügbar
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BSO303SPHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -7.2A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -7.2A
Produkt ist nicht verfügbar
Im Einkaufswagen
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BSO033N03MSGXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 22A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 22A
Produkt ist nicht verfügbar
Im Einkaufswagen
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BSO301SPHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.79W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -12.6A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.79W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -12.6A
Produkt ist nicht verfügbar
Im Einkaufswagen
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BSO613SPVGXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8
Mounting: SMD
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Case: SO8
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -13.8A
Drain-source voltage: -60V
Drain current: -3.44A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8
Mounting: SMD
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Case: SO8
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -13.8A
Drain-source voltage: -60V
Drain current: -3.44A
Produkt ist nicht verfügbar
Im Einkaufswagen
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BFR183E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.10 EUR |
IRFR2607ZTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 45A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 45A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 45A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 45A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XMC750 WATT MOTOR CONTROL KIT |
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4400; Comp: XMC1300,XMC4400
Type of development kit: ARM Infineon
Family: XMC1300; XMC4400
Kit contents: board with XMC1300 microcontroller; board with XMC4400 microcontroller; three-phase inverter
Components: XMC1300; XMC4400
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; screw; USB B micro
Application: 3-phase BLDC motors
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4400; Comp: XMC1300,XMC4400
Type of development kit: ARM Infineon
Family: XMC1300; XMC4400
Kit contents: board with XMC1300 microcontroller; board with XMC4400 microcontroller; three-phase inverter
Components: XMC1300; XMC4400
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; screw; USB B micro
Application: 3-phase BLDC motors
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAT5404WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Produkt ist nicht verfügbar
Im Einkaufswagen
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IRF7328TRPBFXTMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET
Category: Multi channel transistors
Description: Transistor: P-MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.70 EUR |
TLE92108231QXXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; motor controller; VQFN48; 100mA; 6÷28VDC
Operating voltage: 6...28V DC
Output current: 0.1A
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Mounting: SMD
Case: VQFN48
Category: Motor and PWM drivers
Description: IC: driver; motor controller; VQFN48; 100mA; 6÷28VDC
Operating voltage: 6...28V DC
Output current: 0.1A
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Mounting: SMD
Case: VQFN48
Produkt ist nicht verfügbar
Im Einkaufswagen
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TLE92108232QXXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; motor controller; VQFN48; 100mA; 6÷28VDC
Operating voltage: 6...28V DC
Output current: 0.1A
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Mounting: SMD
Case: VQFN48
Category: Motor and PWM drivers
Description: IC: driver; motor controller; VQFN48; 100mA; 6÷28VDC
Operating voltage: 6...28V DC
Output current: 0.1A
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Mounting: SMD
Case: VQFN48
Produkt ist nicht verfügbar
Im Einkaufswagen
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ETD630N16P60HPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 635A; BG-PB60ECO-1; Ufmax: 1.37V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 635A
Case: BG-PB60ECO-1
Max. forward voltage: 1.37V
Max. forward impulse current: 19.8kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 700A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 635A; BG-PB60ECO-1; Ufmax: 1.37V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 635A
Case: BG-PB60ECO-1
Max. forward voltage: 1.37V
Max. forward impulse current: 19.8kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 700A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ETD630N18P60HPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 635A; BG-PB60ECO-1; Ufmax: 1.37V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 635A
Case: BG-PB60ECO-1
Max. forward voltage: 1.37V
Max. forward impulse current: 19.8kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 700A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 635A; BG-PB60ECO-1; Ufmax: 1.37V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 635A
Case: BG-PB60ECO-1
Max. forward voltage: 1.37V
Max. forward impulse current: 19.8kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 700A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ETT630N16P60HPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 635A; BG-PB60ECO-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 635A
Case: BG-PB60ECO-1
Max. forward voltage: 1.37V
Max. forward impulse current: 19.8kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 635A; BG-PB60ECO-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 635A
Case: BG-PB60ECO-1
Max. forward voltage: 1.37V
Max. forward impulse current: 19.8kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB037N06N3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF7831TRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP410N30NAKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; 300W; PG-TO220-3
Drain current: 44A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 300V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; 300W; PG-TO220-3
Drain current: 44A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 300V
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.81 EUR |
10+ | 7.32 EUR |
11+ | 6.92 EUR |
CY7C1354C-166AXC |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Frequency: 166MHz
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Kind of package: in-tray
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Frequency: 166MHz
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Kind of package: in-tray
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1354C-166AXCT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Frequency: 166MHz
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Frequency: 166MHz
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1354C-166AXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Frequency: 166MHz
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Kind of package: in-tray
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Frequency: 166MHz
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Kind of package: in-tray
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1354C-166AXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Frequency: 166MHz
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Frequency: 166MHz
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1356C-166AXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Frequency: 166MHz
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Frequency: 166MHz
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1360C-166AXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Frequency: 166MHz
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Kind of package: in-tray
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Frequency: 166MHz
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Kind of package: in-tray
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF3805STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
800+ | 1.50 EUR |