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SPP20N60C3 SPP20N60C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C058D08A5F9CF1A6F5005056AB5A8F&compId=spp20n60c3.pdf?ci_sign=e6782b5ab7a5620fbda75de79daa9ea3abc07fdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.7A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.85 EUR
24+3.06 EUR
25+2.9 EUR
Mindestbestellmenge: 19
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BSS169H6327XTSA1 BSS169H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B77F99D575011C&compId=BSS169H6327XTSA1.pdf?ci_sign=a9bbcd26f3e9a35aa02625482f4f09ca1954ddc4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Technology: SIPMOS™
Polarisation: unipolar
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 12Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: depletion
Type of transistor: N-MOSFET
auf Bestellung 3030 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
172+0.42 EUR
191+0.38 EUR
247+0.29 EUR
277+0.26 EUR
500+0.14 EUR
Mindestbestellmenge: 143
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BC850CWH6327 BC850CWH6327 INFINEON TECHNOLOGIES Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 4033 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
582+0.12 EUR
882+0.081 EUR
1036+0.069 EUR
1378+0.052 EUR
1458+0.049 EUR
3000+0.047 EUR
Mindestbestellmenge: 417
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BFP450H6327 BFP450H6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191DDA96116A11C&compId=BFP450H6327-dte.pdf?ci_sign=869aabd374218b38f27d0b850e6b9558fedfe383 Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 0.17A; 0.5W; SOT343
Type of transistor: NPN
Kind of package: reel; tape
Kind of transistor: RF
Technology: SIEGET™
Collector current: 0.17A
Power dissipation: 0.5W
Collector-emitter voltage: 4.5V
Frequency: 24GHz
Polarisation: bipolar
Case: SOT343
Mounting: SMD
auf Bestellung 1223 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
118+0.61 EUR
171+0.42 EUR
180+0.4 EUR
500+0.38 EUR
Mindestbestellmenge: 105
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IR2113SPBF IR2113SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC18200CC175EA&compId=IR2113SPBF.pdf?ci_sign=445f264982eff687f2c3ea74a5c723ef83eaa518 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 111ns
Turn-on time: 145ns
Number of channels: 2
Power: 1.25W
Supply voltage: 10...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Case: SO16-W
Output current: -2...2A
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.76 EUR
17+4.46 EUR
22+3.29 EUR
24+3.1 EUR
35+2.99 EUR
Mindestbestellmenge: 16
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IR2113STRPBF IR2113STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DE9CE83C8194469&compId=IR2113STRPBF.pdf?ci_sign=f472be02cbac0b51bd26e1eb6c28c6572262f783 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Kind of package: reel; tape
Operating temperature: -40...125°C
Turn-off time: 111ns
Turn-on time: 145ns
Number of channels: 2
Power: 1.25W
Supply voltage: 10...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Case: SO16-W
Output current: -2...2A
auf Bestellung 1001 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.47 EUR
25+2.97 EUR
38+1.89 EUR
40+1.79 EUR
Mindestbestellmenge: 21
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BCV61CE6327 BCV61CE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04721884404F1A6F5005056AB5A8F&compId=bcv61.pdf?ci_sign=4d6a08eff3d6704cd395cd2fded12cf9d04fe558 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Polarisation: bipolar
Case: SOT143
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Collector-emitter voltage: 30V
Frequency: 250MHz
auf Bestellung 1456 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
260+0.28 EUR
379+0.19 EUR
538+0.13 EUR
Mindestbestellmenge: 200
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IRF5305PBF IRF5305PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7B35F1A6F5005056AB5A8F&compId=irf5305.pdf?ci_sign=656642a39f5b3170605577600e1ea658be004530 Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Mounting: THT
Type of transistor: P-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Gate charge: 42nC
On-state resistance: 60mΩ
Gate-source voltage: ±20V
Power dissipation: 110W
auf Bestellung 3495 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.44 EUR
59+1.22 EUR
128+0.56 EUR
135+0.53 EUR
Mindestbestellmenge: 50
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IRF5305STRLPBF IRF5305STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F63DB1C1ECCF1A303005056AB0C4F&compId=irf5305spbf.pdf?ci_sign=8d8f60bc4dd0bfdf2437e18ae5f2bbd287da7428 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; D2PAK
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
auf Bestellung 638 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.33 EUR
46+1.56 EUR
94+0.77 EUR
99+0.73 EUR
Mindestbestellmenge: 31
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IRF530NPBF IRF530NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7B4AF1A6F5005056AB5A8F&compId=irf530n.pdf?ci_sign=3fe7d72389eed6dc1666bcabcb3dc1c441724283 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 79W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 24.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
93+0.77 EUR
191+0.37 EUR
Mindestbestellmenge: 71
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IRF530NSTRLPBF IRF530NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F652E69C517F1A303005056AB0C4F&compId=irf530nspbf.pdf?ci_sign=8a181d6b2621f4efdd3d8325d333bc87a5af599c description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 431 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.39 EUR
64+1.12 EUR
73+0.99 EUR
124+0.58 EUR
131+0.55 EUR
Mindestbestellmenge: 52
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IRLR120NTRPBF IRLR120NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227DC6E36566F1A303005056AB0C4F&compId=irlr120npbf.pdf?ci_sign=86901e93310b5239412647addcb5f48867ee4e34 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 4751 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
106+0.67 EUR
127+0.56 EUR
241+0.3 EUR
256+0.28 EUR
Mindestbestellmenge: 88
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ICE2QS03G ICE2QS03G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE3994D95E88259&compId=ICE2QS03G.pdf?ci_sign=5a7acae89a2f3453ffa2cfcfc43e0c3387fa3a00 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; PG-DSO-8; flyback; 0÷50%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 500V
Duty cycle factor: 0...50%
Application: SMPS
Operating voltage: 10.5...25V DC
auf Bestellung 2417 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.4 EUR
47+1.54 EUR
68+1.06 EUR
72+1 EUR
1000+0.97 EUR
Mindestbestellmenge: 30
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IRF1010EPBF IRF1010EPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A41F1A6F5005056AB5A8F&compId=irf1010e.pdf?ci_sign=4e33b918874e4f5bb5c633f1a31b0fc4da8e2c04 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 81A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.6nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
64+1.13 EUR
99+0.73 EUR
104+0.69 EUR
Mindestbestellmenge: 59
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IRF1010ESTRLPBF IRF1010ESTRLPBF INFINEON TECHNOLOGIES Infineon-IRF1010ES-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee35a00063b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 59A
Pulsed drain current: 330A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 317 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.86 EUR
46+1.59 EUR
79+0.92 EUR
82+0.87 EUR
Mindestbestellmenge: 39
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IRF1010EZPBF IRF1010EZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A4FF1A6F5005056AB5A8F&compId=irf1010ez.pdf?ci_sign=ed8bcac49cadd537057bdfcef3363db1c4c84ff7 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.43 EUR
57+1.26 EUR
66+1.09 EUR
114+0.63 EUR
120+0.6 EUR
Mindestbestellmenge: 50
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IRF1010NPBF IRF1010NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A56F1A6F5005056AB5A8F&compId=irf1010n.pdf?ci_sign=2a254e785e882b9531549c4036747a933dac8b99 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO220AB
Type of transistor: N-MOSFET
Case: TO220AB
Drain-source voltage: 55V
Drain current: 72A
On-state resistance: 11mΩ
Power dissipation: 130W
Polarisation: unipolar
Kind of package: tube
Gate charge: 80nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.69 EUR
50+1.44 EUR
51+1.4 EUR
Mindestbestellmenge: 43
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IRF1010NSTRLPBF IRF1010NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5D0C960DA8F1A303005056AB0C4F&compId=irf1010nspbf.pdf?ci_sign=0a22a84cce4fe094cee35a09a9cba0abc4efcb3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Gate charge: 0.12µC
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 180W
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 796 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.43 EUR
59+1.23 EUR
99+0.73 EUR
105+0.69 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF1010ZSTRL AUIRF1010ZSTRL INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B4853697639C4A16&compId=auirf1010z.pdf?ci_sign=dd32231763cd3a6e3872bd436d500a04346ee82c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 94A
Power dissipation: 140W
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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BSP452 BSP452 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869762CB64190469&compId=BSP452.pdf?ci_sign=ceaaddcd856b9e1d561d870a432b99bb50dbb1b7 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.16Ω
Technology: Classic PROFET
Output voltage: 40V
auf Bestellung 2752 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.2 EUR
43+1.69 EUR
45+1.6 EUR
2000+1.54 EUR
Mindestbestellmenge: 18
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IGCM15F60GA IGCM15F60GA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE889D861105B6113D1&compId=IGCM15F60GA.pdf?ci_sign=4868b5397603e1bff747b8a76eac22c60f1f2087 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -15...15A
Mounting: THT
Operating temperature: -40...125°C
Frequency: 20kHz
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
Operating voltage: 13.5...18.5/0...400V DC
Power dissipation: 29W
Voltage class: 600V
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.27 EUR
7+10.22 EUR
8+9.67 EUR
Mindestbestellmenge: 5
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IRFB4110PBF IRFB4110PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B713F1A6F5005056AB5A8F&compId=irfb4110pbf.pdf?ci_sign=b56f43999b13464496cb594a44e3702eb31e478b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.69 EUR
31+2.32 EUR
58+1.24 EUR
61+1.17 EUR
Mindestbestellmenge: 27
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IRS2153DPBF IRS2153DPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA78A4D00F1A6F5005056AB5A8F&compId=irs2153d.pdf?ci_sign=778861680765d46b3e732f7e972a8e0a59a6a437 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Power: 1W
Operating temperature: -40...125°C
Voltage class: 600V
Output current: -260...180mA
Case: DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: tube
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Turn-off time: 50ns
Turn-on time: 0.12µs
Number of channels: 2
Supply voltage: 10.1...16.8V DC
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.92 EUR
27+2.73 EUR
Mindestbestellmenge: 25
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IRS2153DSPBF IRS2153DSPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA78A4D00F1A6F5005056AB5A8F&compId=irs2153d.pdf?ci_sign=778861680765d46b3e732f7e972a8e0a59a6a437 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Power: 625mW
Operating temperature: -40...125°C
Voltage class: 600V
Output current: -260...180mA
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: tube
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Turn-off time: 50ns
Turn-on time: 0.12µs
Number of channels: 2
Supply voltage: 10.1...16.8V DC
auf Bestellung 169 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.12 EUR
35+2.07 EUR
36+2.03 EUR
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IKP10N60TXKSA1 IKP10N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD65C1982C915EA&compId=IKP10N60T.pdf?ci_sign=3662fc1223253be4b0852eb3ea1462e0c0c8adde Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 110W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.27 EUR
43+1.67 EUR
55+1.3 EUR
59+1.23 EUR
100+1.19 EUR
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IGP30N60H3XKSA1 IGP30N60H3XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B332CC64E08FA8&compId=IGP30N60H3-DTE.pdf?ci_sign=58814dcd16264ce65d7c642553669d3049471ee2 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™ 5
Manufacturer series: H3
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.03 EUR
40+1.79 EUR
43+1.69 EUR
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IRF1404LPBF IRF1404LPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5D706F12A3F1A303005056AB0C4F&compId=irf1404spbf.pdf?ci_sign=822649cace8b7ad469987a278e29f4fbc5d9766a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.23 EUR
23+3.19 EUR
48+1.52 EUR
50+1.43 EUR
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IRF1404PBF IRF1404PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB4DF1A6F5005056AB5A8F&compId=irf1404.pdf?ci_sign=a3df55e5569a69bf9a0411dd9ac82882ba42fe4a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 4mΩ
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
53+1.36 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 42
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IRF1404STRLPBF IRF1404STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5D706F12A3F1A303005056AB0C4F&compId=irf1404spbf.pdf?ci_sign=822649cace8b7ad469987a278e29f4fbc5d9766a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 364 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.5 EUR
39+1.86 EUR
63+1.14 EUR
67+1.07 EUR
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IRF1404STRRPBF IRF1404STRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5D706F12A3F1A303005056AB0C4F&compId=irf1404spbf.pdf?ci_sign=822649cace8b7ad469987a278e29f4fbc5d9766a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF1404ZPBF IRF1404ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB5BF1A6F5005056AB5A8F&compId=irf1404z.pdf?ci_sign=4226edaf5a01736c5ac4c822ea7296c120edc159 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 0.1µC
On-state resistance: 3.7mΩ
auf Bestellung 1034 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.72 EUR
58+1.24 EUR
81+0.89 EUR
86+0.84 EUR
1000+0.82 EUR
Mindestbestellmenge: 42
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IRF1404ZSTRLPBF IRF1404ZSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC4D8211D555EA&compId=IRF1404ZSTRLPBF.pdf?ci_sign=87b6930e722dc8bcc784995c7e3ad291b39b8665 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 719 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.47 EUR
38+1.89 EUR
53+1.37 EUR
55+1.3 EUR
250+1.26 EUR
Mindestbestellmenge: 29
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AUIRF1404S AUIRF1404S INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458231F47BF1A6F5005056AB5A8F&compId=auirf1404s.pdf?ci_sign=bfd54adc94b9e731669f1aa63d35e9f5331ee4f4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF1404STRL AUIRF1404STRL INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458231F47BF1A6F5005056AB5A8F&compId=auirf1404s.pdf?ci_sign=bfd54adc94b9e731669f1aa63d35e9f5331ee4f4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF1404ZSTRL AUIRF1404ZSTRL INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458231F489F1A6F5005056AB5A8F&compId=auirf1404z.pdf?ci_sign=bdad385dd08203d21d10327b64eadac28bff59af Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE4945L TLE4945L INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E235614E8CC399F1A303005056AB0C4F&compId=TLE49x5L.PDF?ci_sign=5944ef1bb79c45f45003bec140a25aecf3323769 Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Mounting: THT
Kind of sensor: bipolar
Operating temperature: -40...150°C
Supply voltage: 3.8...24V DC
Range of detectable magnetic field: -10...10mT
Case: P-SSO-3-2
Type of sensor: Hall
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.94 EUR
40+1.79 EUR
44+1.66 EUR
66+1.09 EUR
70+1.03 EUR
Mindestbestellmenge: 37
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IRL1404ZPBF IRL1404ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E895D7D79F1A6F5005056AB5A8F&compId=irl1404zpbf.pdf?ci_sign=edc0e4bb9b850a1e899b852b194f112cd23b55d1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Gate charge: 75nC
On-state resistance: 3.1mΩ
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 230W
Pulsed drain current: 790A
Polarisation: unipolar
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.1 EUR
27+2.69 EUR
44+1.64 EUR
46+1.56 EUR
Mindestbestellmenge: 24
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IRL1404ZSTRLPBF IRL1404ZSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA859C69DF273100C4&compId=irl1404xxPBF.pdf?ci_sign=18f5f4bec18706c45b01495803018381f7f1f0b5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Gate charge: 75nC
On-state resistance: 3.1mΩ
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 230W
Pulsed drain current: 790A
Polarisation: unipolar
auf Bestellung 730 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.69 EUR
56+1.29 EUR
63+1.14 EUR
67+1.07 EUR
250+1.04 EUR
Mindestbestellmenge: 43
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IRF520NPBF IRF520NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7B19F1A6F5005056AB5A8F&compId=irf520n.pdf?ci_sign=27f17da5f6252371d050c61b0c74a57453d4cc02 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.7A; 48W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.7A
Power dissipation: 48W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1387 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
104+0.69 EUR
122+0.59 EUR
175+0.41 EUR
184+0.39 EUR
Mindestbestellmenge: 91
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IRF540NPBF IRF540NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7B5FF1A6F5005056AB5A8F&compId=irf540n.pdf?ci_sign=6bd2f4a7599aa796dc9a9207cfafe3b19eaba366 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 47.3nC
On-state resistance: 44mΩ
Power dissipation: 140W
Drain current: 33A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
auf Bestellung 5669 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.32 EUR
67+1.08 EUR
82+0.88 EUR
151+0.48 EUR
159+0.45 EUR
Mindestbestellmenge: 55
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IGP20N65F5XKSA1 IGP20N65F5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF45CC1373491CC&compId=IGP20N65F5-DTE.pdf?ci_sign=3da43c893a5e6f0f6715adc8e1d051dfed694190 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 42A; 125W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 42A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Manufacturer series: F5
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.52 EUR
35+2.07 EUR
37+1.96 EUR
100+1.9 EUR
Mindestbestellmenge: 21
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IGP20N65H5XKSA1 IGP20N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C6A74C625D2A18&compId=IGP20N65H5.pdf?ci_sign=ec7766d73b28b459eeb33e2bffc09b2de180154f Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 63W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 21A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Manufacturer series: H5
Turn-on time: 26ns
Turn-off time: 169ns
Produkt ist nicht verfügbar
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IKP20N65F5XKSA1 IKP20N65F5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE433C2FF47820&compId=IKP20N65F5.pdf?ci_sign=ec4db0b62088189ec6e7ddc9bfbe473303a75170 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 63W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 21A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 21ns
Gate charge: 48nC
Turn-off time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N65H5XKSA1 IKP20N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BDAAE5E773D1BF&compId=IKP20N65H5-DTE.pdf?ci_sign=9c146109ea4cb9ffb436b016c05098b7ecfc6718 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 496 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.88 EUR
32+2.25 EUR
34+2.12 EUR
50+2.1 EUR
100+2.04 EUR
Mindestbestellmenge: 19
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SPP20N60CFD SPP20N60CFD INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58C783B4EE1074A&compId=SPP20N60CFD.pdf?ci_sign=dbc3ea2fe752e41c1a3dd10f077750ec4af484ca Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPP20N60S5 SPP20N60S5 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74979E4DF15EA&compId=SPP20N60S5.pdf?ci_sign=9517e223f8c071928c7215f494b987c9464a9602 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPP20N65C3 SPP20N65C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58C667B060CA74A&compId=SPx20N65C3.pdf?ci_sign=4a5fd5b6aca8081747d29cb9f65df2e1aa25839d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.65 EUR
11+6.89 EUR
14+5.26 EUR
15+4.98 EUR
Mindestbestellmenge: 10
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IRF3205PBF IRF3205PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E3AF9ABF5F1A6F5005056AB5A8F&compId=irf3205.pdf?ci_sign=47570d76e897d5d20bac8221ca20a2599f881f32 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 146nC
auf Bestellung 6346 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.69 EUR
51+1.41 EUR
60+1.21 EUR
125+0.57 EUR
132+0.54 EUR
Mindestbestellmenge: 43
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IRF3205STRLPBF IRF3205STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F603405EE4BF1A303005056AB0C4F&compId=irf3205spbf.pdf?ci_sign=403ab712a856c36dde085f251b4ee0f27d29894f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1332 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.52 EUR
43+1.69 EUR
91+0.79 EUR
97+0.74 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IRF3205STRRPBF IRF3205STRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F603405EE4BF1A303005056AB0C4F&compId=irf3205spbf.pdf?ci_sign=403ab712a856c36dde085f251b4ee0f27d29894f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF3205ZPBF IRF3205ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F605277FBEBF1A303005056AB0C4F&compId=irf3205zpbf.pdf?ci_sign=571559e2d0197b44694031e8ec3e2002d2681e72 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 110nC
auf Bestellung 437 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
81+0.89 EUR
91+0.79 EUR
99+0.73 EUR
112+0.64 EUR
117+0.61 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
IRF3205ZSTRLPBF IRF3205ZSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F605277FBEBF1A303005056AB0C4F&compId=irf3205zpbf.pdf?ci_sign=571559e2d0197b44694031e8ec3e2002d2681e72 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; Idm: 440A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Pulsed drain current: 440A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 659 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.59 EUR
57+1.26 EUR
82+0.87 EUR
88+0.82 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF3205Z AUIRF3205Z INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C045883D51E5F1A6F5005056AB5A8F&compId=auirf3205z.pdf?ci_sign=6431428c43b5d157d009b20bbef0fa76b9c2dd96 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N7002DWH6327XTSA1 2N7002DWH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5913ED425910B&compId=2N7002DWH6327XTSA1.pdf?ci_sign=89a4943aa43a9bcafe826a0a4bdeeb500cbf18f8 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 12141 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
246+0.29 EUR
281+0.25 EUR
415+0.17 EUR
494+0.14 EUR
1454+0.049 EUR
1539+0.046 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
IRF2804STRL7PP IRF2804STRL7PP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5F78AD2110F1A303005056AB0C4F&compId=irf2804s-7ppbf.pdf?ci_sign=09784608006e188b3599386abd39e68fc9475216 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 330W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 330W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPW47N65C3FKSA1 SPW47N65C3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC09871AF5B4143&compId=SPW47N65C3F.pdf?ci_sign=bc8251f17fe0e05522c4493877177400dbf45573 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR135E6327 BCR135E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Kind of transistor: BRT
Case: SOT23
Mounting: SMD
Type of transistor: NPN
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 150MHz
Polarisation: bipolar
auf Bestellung 2423 Stücke:
Lieferzeit 14-21 Tag (e)
955+0.075 EUR
1064+0.067 EUR
1389+0.051 EUR
1467+0.049 EUR
Mindestbestellmenge: 955
Im Einkaufswagen  Stück im Wert von  UAH
BAT6202VH6327XTSA1 BAT6202VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0121C5D1FE469&compId=BAT62E6327HTSA1.pdf?ci_sign=ae9af7365eb6533f6d698a4341944e1ebfabda6e Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 40V; 20mA; 100mW
Type of diode: Schottky rectifying
Case: SC79
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: single diode
Power dissipation: 0.1W
auf Bestellung 1364 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
178+0.4 EUR
211+0.34 EUR
275+0.26 EUR
338+0.21 EUR
397+0.18 EUR
417+0.17 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
IRLML2244TRPBF IRLML2244TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227B83056410F1A303005056AB0C4F&compId=irlml2244pbf.pdf?ci_sign=27aeb15a81d1a043cfbc8e1e86a44ff07507c574 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
auf Bestellung 10115 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
226+0.32 EUR
253+0.28 EUR
439+0.16 EUR
820+0.087 EUR
878+0.082 EUR
Mindestbestellmenge: 193
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BAV70E6327HTSA1 BAV70E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB8091CB2022469&compId=BAV70E6327HTSA1.pdf?ci_sign=9b9bfc3341cea4517c5662670f21967f8db07450 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT23; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double
Case: SOT23
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 2909 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
432+0.17 EUR
521+0.14 EUR
687+0.1 EUR
839+0.085 EUR
1015+0.07 EUR
1520+0.047 EUR
1608+0.044 EUR
1667+0.043 EUR
Mindestbestellmenge: 295
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SPP20N60C3 pVersion=0046&contRep=ZT&docId=E1C058D08A5F9CF1A6F5005056AB5A8F&compId=spp20n60c3.pdf?ci_sign=e6782b5ab7a5620fbda75de79daa9ea3abc07fdf
SPP20N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.7A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.85 EUR
24+3.06 EUR
25+2.9 EUR
Mindestbestellmenge: 19
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BSS169H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B77F99D575011C&compId=BSS169H6327XTSA1.pdf?ci_sign=a9bbcd26f3e9a35aa02625482f4f09ca1954ddc4
BSS169H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Technology: SIPMOS™
Polarisation: unipolar
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 12Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: depletion
Type of transistor: N-MOSFET
auf Bestellung 3030 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
172+0.42 EUR
191+0.38 EUR
247+0.29 EUR
277+0.26 EUR
500+0.14 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
BC850CWH6327
BC850CWH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 4033 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
582+0.12 EUR
882+0.081 EUR
1036+0.069 EUR
1378+0.052 EUR
1458+0.049 EUR
3000+0.047 EUR
Mindestbestellmenge: 417
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BFP450H6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191DDA96116A11C&compId=BFP450H6327-dte.pdf?ci_sign=869aabd374218b38f27d0b850e6b9558fedfe383
BFP450H6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 0.17A; 0.5W; SOT343
Type of transistor: NPN
Kind of package: reel; tape
Kind of transistor: RF
Technology: SIEGET™
Collector current: 0.17A
Power dissipation: 0.5W
Collector-emitter voltage: 4.5V
Frequency: 24GHz
Polarisation: bipolar
Case: SOT343
Mounting: SMD
auf Bestellung 1223 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
118+0.61 EUR
171+0.42 EUR
180+0.4 EUR
500+0.38 EUR
Mindestbestellmenge: 105
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IR2113SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC18200CC175EA&compId=IR2113SPBF.pdf?ci_sign=445f264982eff687f2c3ea74a5c723ef83eaa518
IR2113SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 111ns
Turn-on time: 145ns
Number of channels: 2
Power: 1.25W
Supply voltage: 10...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Case: SO16-W
Output current: -2...2A
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.76 EUR
17+4.46 EUR
22+3.29 EUR
24+3.1 EUR
35+2.99 EUR
Mindestbestellmenge: 16
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IR2113STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DE9CE83C8194469&compId=IR2113STRPBF.pdf?ci_sign=f472be02cbac0b51bd26e1eb6c28c6572262f783
IR2113STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Kind of package: reel; tape
Operating temperature: -40...125°C
Turn-off time: 111ns
Turn-on time: 145ns
Number of channels: 2
Power: 1.25W
Supply voltage: 10...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Case: SO16-W
Output current: -2...2A
auf Bestellung 1001 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.47 EUR
25+2.97 EUR
38+1.89 EUR
40+1.79 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
BCV61CE6327 pVersion=0046&contRep=ZT&docId=E1C04721884404F1A6F5005056AB5A8F&compId=bcv61.pdf?ci_sign=4d6a08eff3d6704cd395cd2fded12cf9d04fe558
BCV61CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Polarisation: bipolar
Case: SOT143
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Collector-emitter voltage: 30V
Frequency: 250MHz
auf Bestellung 1456 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
260+0.28 EUR
379+0.19 EUR
538+0.13 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
IRF5305PBF pVersion=0046&contRep=ZT&docId=E1C04E40FB7B35F1A6F5005056AB5A8F&compId=irf5305.pdf?ci_sign=656642a39f5b3170605577600e1ea658be004530
IRF5305PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Mounting: THT
Type of transistor: P-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Gate charge: 42nC
On-state resistance: 60mΩ
Gate-source voltage: ±20V
Power dissipation: 110W
auf Bestellung 3495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
59+1.22 EUR
128+0.56 EUR
135+0.53 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRF5305STRLPBF description pVersion=0046&contRep=ZT&docId=E21F63DB1C1ECCF1A303005056AB0C4F&compId=irf5305spbf.pdf?ci_sign=8d8f60bc4dd0bfdf2437e18ae5f2bbd287da7428
IRF5305STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; D2PAK
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
auf Bestellung 638 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
46+1.56 EUR
94+0.77 EUR
99+0.73 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
IRF530NPBF pVersion=0046&contRep=ZT&docId=E1C04E40FB7B4AF1A6F5005056AB5A8F&compId=irf530n.pdf?ci_sign=3fe7d72389eed6dc1666bcabcb3dc1c441724283
IRF530NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 79W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 24.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
93+0.77 EUR
191+0.37 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
IRF530NSTRLPBF description pVersion=0046&contRep=ZT&docId=E21F652E69C517F1A303005056AB0C4F&compId=irf530nspbf.pdf?ci_sign=8a181d6b2621f4efdd3d8325d333bc87a5af599c
IRF530NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 431 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
64+1.12 EUR
73+0.99 EUR
124+0.58 EUR
131+0.55 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
IRLR120NTRPBF description pVersion=0046&contRep=ZT&docId=E2227DC6E36566F1A303005056AB0C4F&compId=irlr120npbf.pdf?ci_sign=86901e93310b5239412647addcb5f48867ee4e34
IRLR120NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 4751 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
106+0.67 EUR
127+0.56 EUR
241+0.3 EUR
256+0.28 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
ICE2QS03G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE3994D95E88259&compId=ICE2QS03G.pdf?ci_sign=5a7acae89a2f3453ffa2cfcfc43e0c3387fa3a00
ICE2QS03G
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; PG-DSO-8; flyback; 0÷50%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 500V
Duty cycle factor: 0...50%
Application: SMPS
Operating voltage: 10.5...25V DC
auf Bestellung 2417 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.4 EUR
47+1.54 EUR
68+1.06 EUR
72+1 EUR
1000+0.97 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IRF1010EPBF description pVersion=0046&contRep=ZT&docId=E1C04E34F57A41F1A6F5005056AB5A8F&compId=irf1010e.pdf?ci_sign=4e33b918874e4f5bb5c633f1a31b0fc4da8e2c04
IRF1010EPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 81A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.6nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
64+1.13 EUR
99+0.73 EUR
104+0.69 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
IRF1010ESTRLPBF Infineon-IRF1010ES-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee35a00063b
IRF1010ESTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 59A
Pulsed drain current: 330A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 317 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.86 EUR
46+1.59 EUR
79+0.92 EUR
82+0.87 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IRF1010EZPBF description pVersion=0046&contRep=ZT&docId=E1C04E34F57A4FF1A6F5005056AB5A8F&compId=irf1010ez.pdf?ci_sign=ed8bcac49cadd537057bdfcef3363db1c4c84ff7
IRF1010EZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
57+1.26 EUR
66+1.09 EUR
114+0.63 EUR
120+0.6 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRF1010NPBF description pVersion=0046&contRep=ZT&docId=E1C04E34F57A56F1A6F5005056AB5A8F&compId=irf1010n.pdf?ci_sign=2a254e785e882b9531549c4036747a933dac8b99
IRF1010NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO220AB
Type of transistor: N-MOSFET
Case: TO220AB
Drain-source voltage: 55V
Drain current: 72A
On-state resistance: 11mΩ
Power dissipation: 130W
Polarisation: unipolar
Kind of package: tube
Gate charge: 80nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.69 EUR
50+1.44 EUR
51+1.4 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
IRF1010NSTRLPBF pVersion=0046&contRep=ZT&docId=E21F5D0C960DA8F1A303005056AB0C4F&compId=irf1010nspbf.pdf?ci_sign=0a22a84cce4fe094cee35a09a9cba0abc4efcb3a
IRF1010NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Gate charge: 0.12µC
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 180W
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 796 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
59+1.23 EUR
99+0.73 EUR
105+0.69 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF1010ZSTRL pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B4853697639C4A16&compId=auirf1010z.pdf?ci_sign=dd32231763cd3a6e3872bd436d500a04346ee82c
AUIRF1010ZSTRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 94A
Power dissipation: 140W
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP452 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869762CB64190469&compId=BSP452.pdf?ci_sign=ceaaddcd856b9e1d561d870a432b99bb50dbb1b7
BSP452
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.16Ω
Technology: Classic PROFET
Output voltage: 40V
auf Bestellung 2752 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.2 EUR
43+1.69 EUR
45+1.6 EUR
2000+1.54 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IGCM15F60GA pVersion=0046&contRep=ZT&docId=005056AB752F1EE889D861105B6113D1&compId=IGCM15F60GA.pdf?ci_sign=4868b5397603e1bff747b8a76eac22c60f1f2087
IGCM15F60GA
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -15...15A
Mounting: THT
Operating temperature: -40...125°C
Frequency: 20kHz
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
Operating voltage: 13.5...18.5/0...400V DC
Power dissipation: 29W
Voltage class: 600V
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.27 EUR
7+10.22 EUR
8+9.67 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4110PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B713F1A6F5005056AB5A8F&compId=irfb4110pbf.pdf?ci_sign=b56f43999b13464496cb594a44e3702eb31e478b
IRFB4110PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.69 EUR
31+2.32 EUR
58+1.24 EUR
61+1.17 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IRS2153DPBF description pVersion=0046&contRep=ZT&docId=E1C04EA78A4D00F1A6F5005056AB5A8F&compId=irs2153d.pdf?ci_sign=778861680765d46b3e732f7e972a8e0a59a6a437
IRS2153DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Power: 1W
Operating temperature: -40...125°C
Voltage class: 600V
Output current: -260...180mA
Case: DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: tube
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Turn-off time: 50ns
Turn-on time: 0.12µs
Number of channels: 2
Supply voltage: 10.1...16.8V DC
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.92 EUR
27+2.73 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IRS2153DSPBF description pVersion=0046&contRep=ZT&docId=E1C04EA78A4D00F1A6F5005056AB5A8F&compId=irs2153d.pdf?ci_sign=778861680765d46b3e732f7e972a8e0a59a6a437
IRS2153DSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Power: 625mW
Operating temperature: -40...125°C
Voltage class: 600V
Output current: -260...180mA
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: tube
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Turn-off time: 50ns
Turn-on time: 0.12µs
Number of channels: 2
Supply voltage: 10.1...16.8V DC
auf Bestellung 169 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.12 EUR
35+2.07 EUR
36+2.03 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
IKP10N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD65C1982C915EA&compId=IKP10N60T.pdf?ci_sign=3662fc1223253be4b0852eb3ea1462e0c0c8adde
IKP10N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 110W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.27 EUR
43+1.67 EUR
55+1.3 EUR
59+1.23 EUR
100+1.19 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IGP30N60H3XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B332CC64E08FA8&compId=IGP30N60H3-DTE.pdf?ci_sign=58814dcd16264ce65d7c642553669d3049471ee2
IGP30N60H3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™ 5
Manufacturer series: H3
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.03 EUR
40+1.79 EUR
43+1.69 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRF1404LPBF pVersion=0046&contRep=ZT&docId=E21F5D706F12A3F1A303005056AB0C4F&compId=irf1404spbf.pdf?ci_sign=822649cace8b7ad469987a278e29f4fbc5d9766a
IRF1404LPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.23 EUR
23+3.19 EUR
48+1.52 EUR
50+1.43 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRF1404PBF pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB4DF1A6F5005056AB5A8F&compId=irf1404.pdf?ci_sign=a3df55e5569a69bf9a0411dd9ac82882ba42fe4a
IRF1404PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 4mΩ
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
53+1.36 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
IRF1404STRLPBF pVersion=0046&contRep=ZT&docId=E21F5D706F12A3F1A303005056AB0C4F&compId=irf1404spbf.pdf?ci_sign=822649cace8b7ad469987a278e29f4fbc5d9766a
IRF1404STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 364 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.5 EUR
39+1.86 EUR
63+1.14 EUR
67+1.07 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IRF1404STRRPBF pVersion=0046&contRep=ZT&docId=E21F5D706F12A3F1A303005056AB0C4F&compId=irf1404spbf.pdf?ci_sign=822649cace8b7ad469987a278e29f4fbc5d9766a
IRF1404STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1404ZPBF pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB5BF1A6F5005056AB5A8F&compId=irf1404z.pdf?ci_sign=4226edaf5a01736c5ac4c822ea7296c120edc159
IRF1404ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 0.1µC
On-state resistance: 3.7mΩ
auf Bestellung 1034 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
58+1.24 EUR
81+0.89 EUR
86+0.84 EUR
1000+0.82 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
IRF1404ZSTRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC4D8211D555EA&compId=IRF1404ZSTRLPBF.pdf?ci_sign=87b6930e722dc8bcc784995c7e3ad291b39b8665
IRF1404ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 719 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.47 EUR
38+1.89 EUR
53+1.37 EUR
55+1.3 EUR
250+1.26 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF1404S pVersion=0046&contRep=ZT&docId=E1C0458231F47BF1A6F5005056AB5A8F&compId=auirf1404s.pdf?ci_sign=bfd54adc94b9e731669f1aa63d35e9f5331ee4f4
AUIRF1404S
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF1404STRL pVersion=0046&contRep=ZT&docId=E1C0458231F47BF1A6F5005056AB5A8F&compId=auirf1404s.pdf?ci_sign=bfd54adc94b9e731669f1aa63d35e9f5331ee4f4
AUIRF1404STRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF1404ZSTRL pVersion=0046&contRep=ZT&docId=E1C0458231F489F1A6F5005056AB5A8F&compId=auirf1404z.pdf?ci_sign=bdad385dd08203d21d10327b64eadac28bff59af
AUIRF1404ZSTRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4945L pVersion=0046&contRep=ZT&docId=E235614E8CC399F1A303005056AB0C4F&compId=TLE49x5L.PDF?ci_sign=5944ef1bb79c45f45003bec140a25aecf3323769
TLE4945L
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Mounting: THT
Kind of sensor: bipolar
Operating temperature: -40...150°C
Supply voltage: 3.8...24V DC
Range of detectable magnetic field: -10...10mT
Case: P-SSO-3-2
Type of sensor: Hall
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
40+1.79 EUR
44+1.66 EUR
66+1.09 EUR
70+1.03 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
IRL1404ZPBF pVersion=0046&contRep=ZT&docId=E1C04E895D7D79F1A6F5005056AB5A8F&compId=irl1404zpbf.pdf?ci_sign=edc0e4bb9b850a1e899b852b194f112cd23b55d1
IRL1404ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Gate charge: 75nC
On-state resistance: 3.1mΩ
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 230W
Pulsed drain current: 790A
Polarisation: unipolar
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.1 EUR
27+2.69 EUR
44+1.64 EUR
46+1.56 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRL1404ZSTRLPBF pVersion=0046&contRep=ZT&docId=005056AB90B41EDA859C69DF273100C4&compId=irl1404xxPBF.pdf?ci_sign=18f5f4bec18706c45b01495803018381f7f1f0b5
IRL1404ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Gate charge: 75nC
On-state resistance: 3.1mΩ
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 230W
Pulsed drain current: 790A
Polarisation: unipolar
auf Bestellung 730 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.69 EUR
56+1.29 EUR
63+1.14 EUR
67+1.07 EUR
250+1.04 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
IRF520NPBF pVersion=0046&contRep=ZT&docId=E1C04E40FB7B19F1A6F5005056AB5A8F&compId=irf520n.pdf?ci_sign=27f17da5f6252371d050c61b0c74a57453d4cc02
IRF520NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.7A; 48W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.7A
Power dissipation: 48W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1387 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
104+0.69 EUR
122+0.59 EUR
175+0.41 EUR
184+0.39 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
IRF540NPBF pVersion=0046&contRep=ZT&docId=E1C04E40FB7B5FF1A6F5005056AB5A8F&compId=irf540n.pdf?ci_sign=6bd2f4a7599aa796dc9a9207cfafe3b19eaba366
IRF540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 47.3nC
On-state resistance: 44mΩ
Power dissipation: 140W
Drain current: 33A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
auf Bestellung 5669 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
67+1.08 EUR
82+0.88 EUR
151+0.48 EUR
159+0.45 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IGP20N65F5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF45CC1373491CC&compId=IGP20N65F5-DTE.pdf?ci_sign=3da43c893a5e6f0f6715adc8e1d051dfed694190
IGP20N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 42A; 125W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 42A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Manufacturer series: F5
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.52 EUR
35+2.07 EUR
37+1.96 EUR
100+1.9 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IGP20N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C6A74C625D2A18&compId=IGP20N65H5.pdf?ci_sign=ec7766d73b28b459eeb33e2bffc09b2de180154f
IGP20N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 63W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 21A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Manufacturer series: H5
Turn-on time: 26ns
Turn-off time: 169ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N65F5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE433C2FF47820&compId=IKP20N65F5.pdf?ci_sign=ec4db0b62088189ec6e7ddc9bfbe473303a75170
IKP20N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 63W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 21A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 21ns
Gate charge: 48nC
Turn-off time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BDAAE5E773D1BF&compId=IKP20N65H5-DTE.pdf?ci_sign=9c146109ea4cb9ffb436b016c05098b7ecfc6718
IKP20N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 496 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.88 EUR
32+2.25 EUR
34+2.12 EUR
50+2.1 EUR
100+2.04 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
SPP20N60CFD pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58C783B4EE1074A&compId=SPP20N60CFD.pdf?ci_sign=dbc3ea2fe752e41c1a3dd10f077750ec4af484ca
SPP20N60CFD
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPP20N60S5 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74979E4DF15EA&compId=SPP20N60S5.pdf?ci_sign=9517e223f8c071928c7215f494b987c9464a9602
SPP20N60S5
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPP20N65C3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58C667B060CA74A&compId=SPx20N65C3.pdf?ci_sign=4a5fd5b6aca8081747d29cb9f65df2e1aa25839d
SPP20N65C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.65 EUR
11+6.89 EUR
14+5.26 EUR
15+4.98 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRF3205PBF pVersion=0046&contRep=ZT&docId=E1C04E3AF9ABF5F1A6F5005056AB5A8F&compId=irf3205.pdf?ci_sign=47570d76e897d5d20bac8221ca20a2599f881f32
IRF3205PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 146nC
auf Bestellung 6346 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.69 EUR
51+1.41 EUR
60+1.21 EUR
125+0.57 EUR
132+0.54 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
IRF3205STRLPBF pVersion=0046&contRep=ZT&docId=E21F603405EE4BF1A303005056AB0C4F&compId=irf3205spbf.pdf?ci_sign=403ab712a856c36dde085f251b4ee0f27d29894f
IRF3205STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1332 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.52 EUR
43+1.69 EUR
91+0.79 EUR
97+0.74 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IRF3205STRRPBF pVersion=0046&contRep=ZT&docId=E21F603405EE4BF1A303005056AB0C4F&compId=irf3205spbf.pdf?ci_sign=403ab712a856c36dde085f251b4ee0f27d29894f
IRF3205STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3205ZPBF description pVersion=0046&contRep=ZT&docId=E21F605277FBEBF1A303005056AB0C4F&compId=irf3205zpbf.pdf?ci_sign=571559e2d0197b44694031e8ec3e2002d2681e72
IRF3205ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 110nC
auf Bestellung 437 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
81+0.89 EUR
91+0.79 EUR
99+0.73 EUR
112+0.64 EUR
117+0.61 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
IRF3205ZSTRLPBF pVersion=0046&contRep=ZT&docId=E21F605277FBEBF1A303005056AB0C4F&compId=irf3205zpbf.pdf?ci_sign=571559e2d0197b44694031e8ec3e2002d2681e72
IRF3205ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; Idm: 440A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Pulsed drain current: 440A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 659 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.59 EUR
57+1.26 EUR
82+0.87 EUR
88+0.82 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF3205Z pVersion=0046&contRep=ZT&docId=E1C045883D51E5F1A6F5005056AB5A8F&compId=auirf3205z.pdf?ci_sign=6431428c43b5d157d009b20bbef0fa76b9c2dd96
AUIRF3205Z
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N7002DWH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5913ED425910B&compId=2N7002DWH6327XTSA1.pdf?ci_sign=89a4943aa43a9bcafe826a0a4bdeeb500cbf18f8
2N7002DWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 12141 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
246+0.29 EUR
281+0.25 EUR
415+0.17 EUR
494+0.14 EUR
1454+0.049 EUR
1539+0.046 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
IRF2804STRL7PP pVersion=0046&contRep=ZT&docId=E21F5F78AD2110F1A303005056AB0C4F&compId=irf2804s-7ppbf.pdf?ci_sign=09784608006e188b3599386abd39e68fc9475216
IRF2804STRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 330W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 330W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPW47N65C3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC09871AF5B4143&compId=SPW47N65C3F.pdf?ci_sign=bc8251f17fe0e05522c4493877177400dbf45573
SPW47N65C3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR135E6327 pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9
BCR135E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Kind of transistor: BRT
Case: SOT23
Mounting: SMD
Type of transistor: NPN
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 150MHz
Polarisation: bipolar
auf Bestellung 2423 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
955+0.075 EUR
1064+0.067 EUR
1389+0.051 EUR
1467+0.049 EUR
Mindestbestellmenge: 955
Im Einkaufswagen  Stück im Wert von  UAH
BAT6202VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0121C5D1FE469&compId=BAT62E6327HTSA1.pdf?ci_sign=ae9af7365eb6533f6d698a4341944e1ebfabda6e
BAT6202VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 40V; 20mA; 100mW
Type of diode: Schottky rectifying
Case: SC79
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: single diode
Power dissipation: 0.1W
auf Bestellung 1364 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
178+0.4 EUR
211+0.34 EUR
275+0.26 EUR
338+0.21 EUR
397+0.18 EUR
417+0.17 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
IRLML2244TRPBF pVersion=0046&contRep=ZT&docId=E2227B83056410F1A303005056AB0C4F&compId=irlml2244pbf.pdf?ci_sign=27aeb15a81d1a043cfbc8e1e86a44ff07507c574
IRLML2244TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
auf Bestellung 10115 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
226+0.32 EUR
253+0.28 EUR
439+0.16 EUR
820+0.087 EUR
878+0.082 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
BAV70E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB8091CB2022469&compId=BAV70E6327HTSA1.pdf?ci_sign=9b9bfc3341cea4517c5662670f21967f8db07450
BAV70E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT23; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double
Case: SOT23
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 2909 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
432+0.17 EUR
521+0.14 EUR
687+0.1 EUR
839+0.085 EUR
1015+0.07 EUR
1520+0.047 EUR
1608+0.044 EUR
1667+0.043 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
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