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AUIRF7648M2TR AUIRF7648M2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D749CF1A6F5005056AB5A8F&compId=auirf7648m2.pdf?ci_sign=ebc60ccc8adf31a6563568cfeee5902d69161772 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 63W
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AUIRF7669L2TR AUIRF7669L2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D74B8F1A6F5005056AB5A8F&compId=auirf7669l2.pdf?ci_sign=dbff2b847d938d04165ecc80e0288b271c038e6f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 114A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 100W
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AUIRF7675M2TR AUIRF7675M2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D74C6F1A6F5005056AB5A8F&compId=auirf7675m2.pdf?ci_sign=6f2fdedd9b7a7dd5fc79b040865f7cc6be687d64 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 45W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 45W
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AUIRF7736M2TR AUIRF7736M2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D74D4F1A6F5005056AB5A8F&compId=auirf7736m2.pdf?ci_sign=b40706946f99bbe0e7b0512c740cc99a0530a4b5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 108A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 63W
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AUIRF7737L2TR AUIRF7737L2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D74E2F1A6F5005056AB5A8F&compId=auirf7737l2.pdf?ci_sign=988a0605716b6ae68df67a927a25574adeb3e3ad Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 156A; 83W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 156A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 83W
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AUIRF7739L2TR AUIRF7739L2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D74FEF1A6F5005056AB5A8F&compId=auirf7739l2.pdf?ci_sign=763f17a5c4d0c90cf8f3a4c554ade81af3e0c685 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 125W
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AUIRL7732S2TR AUIRL7732S2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C045A07B793EF1A6F5005056AB5A8F&compId=auirl7732s2.pdf?ci_sign=ddf47b1ea64ae3b106eec640a657904cc40ff659 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 41W
Features of semiconductor devices: logic level
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AUIRL7736M2TR AUIRL7736M2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C045A07B794CF1A6F5005056AB5A8F&compId=auirl7736m2.pdf?ci_sign=396d2e157a61a6f71b207c711048dbabfc61ef07 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 112A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 63W
Features of semiconductor devices: logic level
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IRF6617TRPBF IRF6617TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F68F6F3C254F1A303005056AB0C4F&compId=irf6617pbf.pdf?ci_sign=8194306b9a0254a0290e1c6c85b89e2daced3d6d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 42W
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IRF6623TRPBF IRF6623TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F69BF922773F1A303005056AB0C4F&compId=irf6623pbf.pdf?ci_sign=7e47b28080f5bc09af2f5dfabdcf15cbcfcda1b6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 42W
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IRF6646TRPBF IRF6646TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6D6F02B060F1A303005056AB0C4F&compId=irf6646pbf.pdf?ci_sign=83a194730ab9f4171c6af53e4a964c5c99aadec6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
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IRF6674TRPBF IRF6674TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6E21611C47F1A303005056AB0C4F&compId=irf6674pbf.pdf?ci_sign=6f30856429dd849e725522aa6baeff678ecc5240 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 67A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 67A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
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IRF6715MTRPBF IRF6715MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F7007E134E9F1A303005056AB0C4F&compId=irf6715mpbf.pdf?ci_sign=62374627c1017a1a9ad461228f8c75cd0c4ca3e2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 180A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 78W
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IRF6716MTRPBF IRF6716MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F7021DF830BF1A303005056AB0C4F&compId=irf6716mpbf.pdf?ci_sign=169aef872d10aacc80aeb938269d641f989a2ef6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 78W
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IRF6785MTRPBF IRF6785MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F721B77381DF1A303005056AB0C4F&compId=irf6785mpbf.pdf?ci_sign=9ead012a52e6c003d2cb3151b6ca9ff5aeb45017 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 57W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 57W
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IRF6795MTRPBF IRF6795MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F723885ED80F1A303005056AB0C4F&compId=irf6795mpbf.pdf?ci_sign=9d49a0948566a3df84490265ddb6219a15d0ce6b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 160A; 75W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 160A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 75W
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IRF6811STRPBF IRF6811STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F7282E16378F1A303005056AB0C4F&compId=irf6811spbf.pdf?ci_sign=579b5a75859bdda2e370556044bd3504e41a20aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 74A; 32W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 74A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 32W
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IRF6894MTRPBF IRF6894MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F72A548A092F1A303005056AB0C4F&compId=irf6894mpbf.pdf?ci_sign=eb0a6907cd34648584abc41f075c9b9488986d39 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 54W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 170A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 54W
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IRF6898MTRPBF IRF6898MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F72C0D51813F1A303005056AB0C4F&compId=irf6898mpbf.pdf?ci_sign=2cf3ed416c9acdf1e84616972f31edd8f6034727 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 213A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 213A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 78W
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IRF7739L1TRPBF IRF7739L1TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC8A397ACBB5EA&compId=IRF7739L1TRPBF.pdf?ci_sign=42f6f850806d5dbb3ce2d0cdd11430ea04a209f9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 125W
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IRF7739L2TRPBF IRF7739L2TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A96E6489E7F1A303005056AB0C4F&compId=irf7739l2pbf.pdf?ci_sign=296feb793da6921ebca5ab264bdfe2983eb7f134 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 125W
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IRF7749L2TRPBF IRF7749L2TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A98A20BC1FF1A303005056AB0C4F&compId=irf7749l2pbf.pdf?ci_sign=b464ed5cc7d209a4bc1050ee64b1542e1151909c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7759L2TRPBF IRF7759L2TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AA377C7252F1A303005056AB0C4F&compId=irf7759l2pbf.pdf?ci_sign=d4e941edcf85e33880fdc73e03ad22892cf18692 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 26A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 26A
Power dissipation: 125W
Case: DirectFET
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 200nC
Kind of channel: enhancement
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IRF7769L2TRPBF IRF7769L2TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AA53F02E47F1A303005056AB0C4F&compId=irf7769l2pbf.pdf?ci_sign=5cd3eeb2ac76d76da1ad88b7a602e610094c74ab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 124A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 124A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 125W
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IRF7779L2TRPBF IRF7779L2TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AA743EF966F1A303005056AB0C4F&compId=irf7779l2pbf.pdf?ci_sign=a411caebdb5e453bbb838d0678c14cccf71cf252 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 67A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 125W
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IRF7946TRPBF IRF7946TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC97E68E7355EA&compId=IRF7946TRPBF.pdf?ci_sign=ac36c1ec84c1dbd734ca4b3ef349040e5869064e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 96W
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IRF6645TRPBF IRF6645TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6D4F04E802F1A303005056AB0C4F&compId=irf6645pbf.pdf?ci_sign=b9722bf4f481f3c294902eb315726445e6f9e24d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.7A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 42W
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IRF6641TRPBF IRF6641TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6CFED008FEF1A303005056AB0C4F&compId=irf6641pbf.pdf?ci_sign=3e43d1a3b768edd2c9fe2c68790af0399ca0d64e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.6A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.6A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
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AUIRF7665S2TR AUIRF7665S2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D74AAF1A6F5005056AB5A8F&compId=auirf7665s2.pdf?ci_sign=2dfdc926c8068713a22a7ec5c3a3577b51d331dc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 30W
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AUIRL7766M2TR AUIRL7766M2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C045A07B795AF1A6F5005056AB5A8F&compId=auirl7766m2.pdf?ci_sign=4c325d859c0e4ada8427c9bfb0a836e4c3900005 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 62.5W
Features of semiconductor devices: logic level
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IRF6216TRPBF IRF6216TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F672CDB9B16F1A303005056AB0C4F&compId=irf6216pbf.pdf?ci_sign=9ad0f60fd0f5dd2bab877d7a145bd99db3800a4b Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: -150V
Drain current: -2.2A
Power dissipation: 2.5W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Kind of package: reel
Polarisation: unipolar
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IPF042N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPF042N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f49616ca62b7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 139A; Idm: 556A; 167W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 139A
Case: D2PAK-7
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 57nC
Power dissipation: 167W
Pulsed drain current: 556A
Technology: StrongIRFET™ 2
On-state resistance: 4.25mΩ
Produkt ist nicht verfügbar
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IRF7749L1TRPBF IRF7749L1TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC8D93D3E8D5EA&compId=IRF7749L1TRPBF.pdf?ci_sign=ac4cf3f56b24f673218007a1d83cc26fc9837f08 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 3.3W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 3.3W
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.1mΩ
Produkt ist nicht verfügbar
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IPT020N10N5ATMA1 INFINEON TECHNOLOGIES infineon-ipt020n10n5-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IPT020N10N3ATMA1 IPT020N10N3ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBAED93866211C&compId=IPT020N10N3-DTE.pdf?ci_sign=7aae739c986093ff957dd2e9d4df66937580f02f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhancement
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TLE42712GATMA1 TLE42712GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698BB0584C64469&compId=TLE4271-2G.pdf?ci_sign=7a8f05af902fbc92a2cda1d4ba88edc4035a1995 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.55A; TO263-7; SMD
Case: TO263-7
Mounting: SMD
Kind of package: reel; tape
Output current: 0.55A
Output voltage: 5V
Voltage drop: 0.35V
Input voltage: 6...40V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...150°C
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24+2.99 EUR
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IPS70R600P7SAKMA1 INFINEON TECHNOLOGIES infineon-ips70r600p7s-ds-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 700V; 8.5A; 43.1W; IPAK,TO251; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 700V
Drain current: 8.5A
Power dissipation: 43.1W
Case: IPAK; TO251
Gate-source voltage: 16V
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 10.5nC
Kind of channel: enhancement
Electrical mounting: SMT
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IPI65R110CFDXKSA1 IPI65R110CFDXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8F76640F2D1BF&compId=IPI65R110CFD-DTE.pdf?ci_sign=98f3c23ad83f574f23e99ec980f3f2d9b7bb4921 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Case: PG-TO262-3
Kind of channel: enhancement
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.11Ω
Gate-source voltage: ±20V
Drain current: 31.2A
Power dissipation: 277.8W
Drain-source voltage: 650V
Produkt ist nicht verfügbar
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IPA65R110CFDXKSA1 IPA65R110CFDXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2BFD1810B71BF&compId=IPA65R110CFD-DTE.pdf?ci_sign=3fac4e548e5783cdb7532f4ef4e05f6a621d37d7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 34.7W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Case: TO220FP
Kind of channel: enhancement
Mounting: THT
Polarisation: unipolar
Kind of package: tube
On-state resistance: 0.11Ω
Gate-source voltage: ±20V
Drain current: 31.2A
Power dissipation: 34.7W
Drain-source voltage: 650V
Produkt ist nicht verfügbar
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IPB65R110CFDATMA1 IPB65R110CFDATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2F00C05A131BF&compId=IPB65R110CFD-DTE.pdf?ci_sign=018f7b0d5ed077f0e2f964de094a95fef9f5d39f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB65R110CFDAATMA1 INFINEON TECHNOLOGIES Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 31.2A; 277.8W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 118nC
Electrical mounting: SMT
Application: automotive industry
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IPW65R110CFDFKSA2 INFINEON TECHNOLOGIES Infineon-IPX65R110CFD-DS-v02_06-en.pdf?fileId=db3a30433004641301306abd8e2041b1 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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30+5.31 EUR
120+4.78 EUR
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BSZ068N06NSATMA1 BSZ068N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1C1ABF3B811C&compId=BSZ068N06NS-DTE.pdf?ci_sign=fa3ecd472cbb88f8d166e7c20f1c2f8d458bfbec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 46W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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BSB028N06NN3GXUMA1 BSB028N06NN3GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C21169B999611C&compId=BSB028N06NN3G-DTE.pdf?ci_sign=9f74ee56527681bf6720ac86acff4685671d1a87 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 78W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 78W
Case: CanPAK™ M; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC028N06LS3GATMA1 BSC028N06LS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C28F27079C611C&compId=BSC028N06LS3G-DTE.pdf?ci_sign=bbe9fc3061cb470e92c25d928fd3834c48baac10 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPD038N06N3GATMA1 IPD038N06N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A699276DED30A11C&compId=IPD038N06N3G-DTE.pdf?ci_sign=bd1362c96028dc62407e059fda18143201d9fbe8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPD088N06N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD088N06N3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b2351db4d5c Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IPB031N08N5ATMA1 IPB031N08N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB151D4F9211C&compId=IPB031N08N5-DTE.pdf?ci_sign=3159f32d96288cc61656ed143c70a029107448c2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB036N12N3GATMA1 IPB036N12N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBD3543DCCA11C&compId=IPB036N12N3G-DTE.pdf?ci_sign=f6e85fe1d433fdb0362bcc3083d1806c0c8f5354 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 180A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 120V
Drain current: 180A
Power dissipation: 300W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB038N12N3GATMA1 IPB038N12N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBB68318E8811C&compId=IPB038N12N3G-DTE.pdf?ci_sign=1ce7670095e99e047c4caf194cc03ca588fb26fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 120V
Drain current: 120A
Power dissipation: 300W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
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IPB031NE7N3GATMA1 IPB031NE7N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5DD52B98B211C&compId=IPB031NE7N3G-DTE.pdf?ci_sign=cdda49cb192f2d913b204bf3b9535fc7bc4e1788 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
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IRLHM630TRPBF IRLHM630TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222776C4E3F4BF1A303005056AB0C4F&compId=irlhm630pbf.pdf?ci_sign=170c72500cf1dc0c0ea25a0be851ac421b66adf6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRF7862TRPBF IRF7862TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AD030E88B4F1A303005056AB0C4F&compId=irf7862pbf.pdf?ci_sign=84fcf72887f95ada0b37c5ae9daf8ac8c5825d63 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8321TRPBF IRFH8321TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCCBDA836655EA&compId=IRFH8321TRPBF.pdf?ci_sign=8af00b2029e222c13b14e3ae39a6c3a7baa0f4ae Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.4W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8325TRPBF IRFH8325TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BA7452A666F1A303005056AB0C4F&compId=irfh8325pbf.pdf?ci_sign=a76385c090eb515f3739add9718f7fb10d861c99 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSL308PEH6327XTSA1 BSL308PEH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA913D1D61B311CC&compId=BSL308PEH6327XTSA1-DTE.pdf?ci_sign=2926dcc98cc2f16e4e3030d97715eb942d9c5794 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6; ESD
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET x2
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 80mΩ
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-TSOP-6
Kind of channel: enhancement
Version: ESD
Mounting: SMD
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120+0.6 EUR
172+0.42 EUR
211+0.34 EUR
400+0.29 EUR
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BSZ146N10LS5ATMA1 INFINEON TECHNOLOGIES infineon-bsz146n10ls5-datasheet-en.pdf?fileId=5546d4625696ed760156e6c1a0a327fc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 40A; 52W; SMT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: N
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 52W
Gate-source voltage: 20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
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IPN50R1K4CEATMA1 INFINEON TECHNOLOGIES Infineon-IPN50R1K4CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac894e25aa7 Category: Transistors - Unclassified
Description: IPN50R1K4CEATMA1
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3000+0.23 EUR
Mindestbestellmenge: 3000
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IRFP4310ZPBFXKMA1 INFINEON TECHNOLOGIES Infineon_IRFP4310Z_DataSheet_v01_01_EN-3363303.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 134A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 134A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IRS25752LTRPBF IRS25752LTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE790BCF6A24C542745&compId=IRS25752ltrpbf.pdf?ci_sign=cab2f992ac3e11dcc78a977da4ae432757a0c1b3 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SOT23-6
Output current: -240...160mA
Number of channels: 1
Supply voltage: 10...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 225ns
Turn-off time: 255ns
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AUIRF7648M2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D749CF1A6F5005056AB5A8F&compId=auirf7648m2.pdf?ci_sign=ebc60ccc8adf31a6563568cfeee5902d69161772
AUIRF7648M2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 63W
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AUIRF7669L2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D74B8F1A6F5005056AB5A8F&compId=auirf7669l2.pdf?ci_sign=dbff2b847d938d04165ecc80e0288b271c038e6f
AUIRF7669L2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 114A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 100W
Produkt ist nicht verfügbar
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AUIRF7675M2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D74C6F1A6F5005056AB5A8F&compId=auirf7675m2.pdf?ci_sign=6f2fdedd9b7a7dd5fc79b040865f7cc6be687d64
AUIRF7675M2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 45W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 45W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7736M2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D74D4F1A6F5005056AB5A8F&compId=auirf7736m2.pdf?ci_sign=b40706946f99bbe0e7b0512c740cc99a0530a4b5
AUIRF7736M2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 108A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 63W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7737L2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D74E2F1A6F5005056AB5A8F&compId=auirf7737l2.pdf?ci_sign=988a0605716b6ae68df67a927a25574adeb3e3ad
AUIRF7737L2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 156A; 83W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 156A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 83W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7739L2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D74FEF1A6F5005056AB5A8F&compId=auirf7739l2.pdf?ci_sign=763f17a5c4d0c90cf8f3a4c554ade81af3e0c685
AUIRF7739L2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 125W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRL7732S2TR pVersion=0046&contRep=ZT&docId=E1C045A07B793EF1A6F5005056AB5A8F&compId=auirl7732s2.pdf?ci_sign=ddf47b1ea64ae3b106eec640a657904cc40ff659
AUIRL7732S2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 41W
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRL7736M2TR pVersion=0046&contRep=ZT&docId=E1C045A07B794CF1A6F5005056AB5A8F&compId=auirl7736m2.pdf?ci_sign=396d2e157a61a6f71b207c711048dbabfc61ef07
AUIRL7736M2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 112A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 63W
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6617TRPBF pVersion=0046&contRep=ZT&docId=E21F68F6F3C254F1A303005056AB0C4F&compId=irf6617pbf.pdf?ci_sign=8194306b9a0254a0290e1c6c85b89e2daced3d6d
IRF6617TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 42W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6623TRPBF pVersion=0046&contRep=ZT&docId=E21F69BF922773F1A303005056AB0C4F&compId=irf6623pbf.pdf?ci_sign=7e47b28080f5bc09af2f5dfabdcf15cbcfcda1b6
IRF6623TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 42W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6646TRPBF pVersion=0046&contRep=ZT&docId=E21F6D6F02B060F1A303005056AB0C4F&compId=irf6646pbf.pdf?ci_sign=83a194730ab9f4171c6af53e4a964c5c99aadec6
IRF6646TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6674TRPBF pVersion=0046&contRep=ZT&docId=E21F6E21611C47F1A303005056AB0C4F&compId=irf6674pbf.pdf?ci_sign=6f30856429dd849e725522aa6baeff678ecc5240
IRF6674TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 67A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 67A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6715MTRPBF pVersion=0046&contRep=ZT&docId=E21F7007E134E9F1A303005056AB0C4F&compId=irf6715mpbf.pdf?ci_sign=62374627c1017a1a9ad461228f8c75cd0c4ca3e2
IRF6715MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 180A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 78W
Produkt ist nicht verfügbar
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IRF6716MTRPBF pVersion=0046&contRep=ZT&docId=E21F7021DF830BF1A303005056AB0C4F&compId=irf6716mpbf.pdf?ci_sign=169aef872d10aacc80aeb938269d641f989a2ef6
IRF6716MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 78W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6785MTRPBF pVersion=0046&contRep=ZT&docId=E21F721B77381DF1A303005056AB0C4F&compId=irf6785mpbf.pdf?ci_sign=9ead012a52e6c003d2cb3151b6ca9ff5aeb45017
IRF6785MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 57W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 57W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6795MTRPBF pVersion=0046&contRep=ZT&docId=E21F723885ED80F1A303005056AB0C4F&compId=irf6795mpbf.pdf?ci_sign=9d49a0948566a3df84490265ddb6219a15d0ce6b
IRF6795MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 160A; 75W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 160A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 75W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6811STRPBF pVersion=0046&contRep=ZT&docId=E21F7282E16378F1A303005056AB0C4F&compId=irf6811spbf.pdf?ci_sign=579b5a75859bdda2e370556044bd3504e41a20aa
IRF6811STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 74A; 32W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 74A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 32W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6894MTRPBF pVersion=0046&contRep=ZT&docId=E21F72A548A092F1A303005056AB0C4F&compId=irf6894mpbf.pdf?ci_sign=eb0a6907cd34648584abc41f075c9b9488986d39
IRF6894MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 54W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 170A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 54W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6898MTRPBF pVersion=0046&contRep=ZT&docId=E21F72C0D51813F1A303005056AB0C4F&compId=irf6898mpbf.pdf?ci_sign=2cf3ed416c9acdf1e84616972f31edd8f6034727
IRF6898MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 213A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 213A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 78W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7739L1TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC8A397ACBB5EA&compId=IRF7739L1TRPBF.pdf?ci_sign=42f6f850806d5dbb3ce2d0cdd11430ea04a209f9
IRF7739L1TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 125W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7739L2TRPBF pVersion=0046&contRep=ZT&docId=E221A96E6489E7F1A303005056AB0C4F&compId=irf7739l2pbf.pdf?ci_sign=296feb793da6921ebca5ab264bdfe2983eb7f134
IRF7739L2TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 125W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7749L2TRPBF pVersion=0046&contRep=ZT&docId=E221A98A20BC1FF1A303005056AB0C4F&compId=irf7749l2pbf.pdf?ci_sign=b464ed5cc7d209a4bc1050ee64b1542e1151909c
IRF7749L2TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7759L2TRPBF pVersion=0046&contRep=ZT&docId=E221AA377C7252F1A303005056AB0C4F&compId=irf7759l2pbf.pdf?ci_sign=d4e941edcf85e33880fdc73e03ad22892cf18692
IRF7759L2TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 26A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 26A
Power dissipation: 125W
Case: DirectFET
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 200nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7769L2TRPBF pVersion=0046&contRep=ZT&docId=E221AA53F02E47F1A303005056AB0C4F&compId=irf7769l2pbf.pdf?ci_sign=5cd3eeb2ac76d76da1ad88b7a602e610094c74ab
IRF7769L2TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 124A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 124A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 125W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7779L2TRPBF pVersion=0046&contRep=ZT&docId=E221AA743EF966F1A303005056AB0C4F&compId=irf7779l2pbf.pdf?ci_sign=a411caebdb5e453bbb838d0678c14cccf71cf252
IRF7779L2TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 67A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 125W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7946TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC97E68E7355EA&compId=IRF7946TRPBF.pdf?ci_sign=ac36c1ec84c1dbd734ca4b3ef349040e5869064e
IRF7946TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 96W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6645TRPBF pVersion=0046&contRep=ZT&docId=E21F6D4F04E802F1A303005056AB0C4F&compId=irf6645pbf.pdf?ci_sign=b9722bf4f481f3c294902eb315726445e6f9e24d
IRF6645TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.7A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 42W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6641TRPBF pVersion=0046&contRep=ZT&docId=E21F6CFED008FEF1A303005056AB0C4F&compId=irf6641pbf.pdf?ci_sign=3e43d1a3b768edd2c9fe2c68790af0399ca0d64e
IRF6641TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.6A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.6A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7665S2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D74AAF1A6F5005056AB5A8F&compId=auirf7665s2.pdf?ci_sign=2dfdc926c8068713a22a7ec5c3a3577b51d331dc
AUIRF7665S2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 30W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRL7766M2TR pVersion=0046&contRep=ZT&docId=E1C045A07B795AF1A6F5005056AB5A8F&compId=auirl7766m2.pdf?ci_sign=4c325d859c0e4ada8427c9bfb0a836e4c3900005
AUIRL7766M2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 62.5W
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6216TRPBF pVersion=0046&contRep=ZT&docId=E21F672CDB9B16F1A303005056AB0C4F&compId=irf6216pbf.pdf?ci_sign=9ad0f60fd0f5dd2bab877d7a145bd99db3800a4b
IRF6216TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: -150V
Drain current: -2.2A
Power dissipation: 2.5W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Kind of package: reel
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPF042N10NF2SATMA1 Infineon-IPF042N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f49616ca62b7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 139A; Idm: 556A; 167W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 139A
Case: D2PAK-7
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 57nC
Power dissipation: 167W
Pulsed drain current: 556A
Technology: StrongIRFET™ 2
On-state resistance: 4.25mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7749L1TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC8D93D3E8D5EA&compId=IRF7749L1TRPBF.pdf?ci_sign=ac4cf3f56b24f673218007a1d83cc26fc9837f08
IRF7749L1TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 3.3W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 3.3W
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.1mΩ
Produkt ist nicht verfügbar
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IPT020N10N5ATMA1 infineon-ipt020n10n5-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3979 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+2.95 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
IPT020N10N3ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBAED93866211C&compId=IPT020N10N3-DTE.pdf?ci_sign=7aae739c986093ff957dd2e9d4df66937580f02f
IPT020N10N3ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE42712GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698BB0584C64469&compId=TLE4271-2G.pdf?ci_sign=7a8f05af902fbc92a2cda1d4ba88edc4035a1995
TLE42712GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.55A; TO263-7; SMD
Case: TO263-7
Mounting: SMD
Kind of package: reel; tape
Output current: 0.55A
Output voltage: 5V
Voltage drop: 0.35V
Input voltage: 6...40V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...150°C
auf Bestellung 931 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.99 EUR
33+2.2 EUR
34+2.12 EUR
Mindestbestellmenge: 24
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IPS70R600P7SAKMA1 infineon-ips70r600p7s-ds-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 700V; 8.5A; 43.1W; IPAK,TO251; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 700V
Drain current: 8.5A
Power dissipation: 43.1W
Case: IPAK; TO251
Gate-source voltage: 16V
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 10.5nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 1030 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
225+0.33 EUR
Mindestbestellmenge: 225
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IPI65R110CFDXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8F76640F2D1BF&compId=IPI65R110CFD-DTE.pdf?ci_sign=98f3c23ad83f574f23e99ec980f3f2d9b7bb4921
IPI65R110CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Case: PG-TO262-3
Kind of channel: enhancement
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.11Ω
Gate-source voltage: ±20V
Drain current: 31.2A
Power dissipation: 277.8W
Drain-source voltage: 650V
Produkt ist nicht verfügbar
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IPA65R110CFDXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2BFD1810B71BF&compId=IPA65R110CFD-DTE.pdf?ci_sign=3fac4e548e5783cdb7532f4ef4e05f6a621d37d7
IPA65R110CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 34.7W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Case: TO220FP
Kind of channel: enhancement
Mounting: THT
Polarisation: unipolar
Kind of package: tube
On-state resistance: 0.11Ω
Gate-source voltage: ±20V
Drain current: 31.2A
Power dissipation: 34.7W
Drain-source voltage: 650V
Produkt ist nicht verfügbar
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IPB65R110CFDATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2F00C05A131BF&compId=IPB65R110CFD-DTE.pdf?ci_sign=018f7b0d5ed077f0e2f964de094a95fef9f5d39f
IPB65R110CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB65R110CFDAATMA1 Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 31.2A; 277.8W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 118nC
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+4.68 EUR
Mindestbestellmenge: 1000
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IPW65R110CFDFKSA2 Infineon-IPX65R110CFD-DS-v02_06-en.pdf?fileId=db3a30433004641301306abd8e2041b1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+5.31 EUR
120+4.78 EUR
Mindestbestellmenge: 30
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BSZ068N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1C1ABF3B811C&compId=BSZ068N06NS-DTE.pdf?ci_sign=fa3ecd472cbb88f8d166e7c20f1c2f8d458bfbec
BSZ068N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 46W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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BSB028N06NN3GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C21169B999611C&compId=BSB028N06NN3G-DTE.pdf?ci_sign=9f74ee56527681bf6720ac86acff4685671d1a87
BSB028N06NN3GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 78W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 78W
Case: CanPAK™ M; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC028N06LS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C28F27079C611C&compId=BSC028N06LS3G-DTE.pdf?ci_sign=bbe9fc3061cb470e92c25d928fd3834c48baac10
BSC028N06LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPD038N06N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A699276DED30A11C&compId=IPD038N06N3G-DTE.pdf?ci_sign=bd1362c96028dc62407e059fda18143201d9fbe8
IPD038N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPD088N06N3GATMA1 Infineon-IPD088N06N3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b2351db4d5c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.51 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPB031N08N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB151D4F9211C&compId=IPB031N08N5-DTE.pdf?ci_sign=3159f32d96288cc61656ed143c70a029107448c2
IPB031N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB036N12N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBD3543DCCA11C&compId=IPB036N12N3G-DTE.pdf?ci_sign=f6e85fe1d433fdb0362bcc3083d1806c0c8f5354
IPB036N12N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 180A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 120V
Drain current: 180A
Power dissipation: 300W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB038N12N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBB68318E8811C&compId=IPB038N12N3G-DTE.pdf?ci_sign=1ce7670095e99e047c4caf194cc03ca588fb26fa
IPB038N12N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 120V
Drain current: 120A
Power dissipation: 300W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPB031NE7N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5DD52B98B211C&compId=IPB031NE7N3G-DTE.pdf?ci_sign=cdda49cb192f2d913b204bf3b9535fc7bc4e1788
IPB031NE7N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRLHM630TRPBF pVersion=0046&contRep=ZT&docId=E222776C4E3F4BF1A303005056AB0C4F&compId=irlhm630pbf.pdf?ci_sign=170c72500cf1dc0c0ea25a0be851ac421b66adf6
IRLHM630TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRF7862TRPBF pVersion=0046&contRep=ZT&docId=E221AD030E88B4F1A303005056AB0C4F&compId=irf7862pbf.pdf?ci_sign=84fcf72887f95ada0b37c5ae9daf8ac8c5825d63
IRF7862TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH8321TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCCBDA836655EA&compId=IRFH8321TRPBF.pdf?ci_sign=8af00b2029e222c13b14e3ae39a6c3a7baa0f4ae
IRFH8321TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.4W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH8325TRPBF pVersion=0046&contRep=ZT&docId=E221BA7452A666F1A303005056AB0C4F&compId=irfh8325pbf.pdf?ci_sign=a76385c090eb515f3739add9718f7fb10d861c99
IRFH8325TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSL308PEH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA913D1D61B311CC&compId=BSL308PEH6327XTSA1-DTE.pdf?ci_sign=2926dcc98cc2f16e4e3030d97715eb942d9c5794
BSL308PEH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6; ESD
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET x2
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 80mΩ
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-TSOP-6
Kind of channel: enhancement
Version: ESD
Mounting: SMD
auf Bestellung 1942 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
172+0.42 EUR
211+0.34 EUR
400+0.29 EUR
Mindestbestellmenge: 120
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BSZ146N10LS5ATMA1 infineon-bsz146n10ls5-datasheet-en.pdf?fileId=5546d4625696ed760156e6c1a0a327fc
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 40A; 52W; SMT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: N
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 52W
Gate-source voltage: 20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.67 EUR
Mindestbestellmenge: 5000
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IPN50R1K4CEATMA1 Infineon-IPN50R1K4CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac894e25aa7
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPN50R1K4CEATMA1
auf Bestellung 78000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.23 EUR
Mindestbestellmenge: 3000
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IRFP4310ZPBFXKMA1 Infineon_IRFP4310Z_DataSheet_v01_01_EN-3363303.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 134A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 134A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS25752LTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE790BCF6A24C542745&compId=IRS25752ltrpbf.pdf?ci_sign=cab2f992ac3e11dcc78a977da4ae432757a0c1b3
IRS25752LTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SOT23-6
Output current: -240...160mA
Number of channels: 1
Supply voltage: 10...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 225ns
Turn-off time: 255ns
Produkt ist nicht verfügbar
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