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IPP052NE7N3GXKSA1 IPP052NE7N3GXKSA1 INFINEON TECHNOLOGIES IPP052NE7N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 75 Stücke:
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45+1.62 EUR
51+1.42 EUR
59+1.22 EUR
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IRF40R207 IRF40R207 INFINEON TECHNOLOGIES IRF40R207.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 45nC
On-state resistance: 5.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 64A
Power dissipation: 83W
auf Bestellung 516 Stücke:
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114+0.63 EUR
135+0.53 EUR
147+0.49 EUR
250+0.43 EUR
500+0.4 EUR
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IPB016N06L3GATMA1 IPB016N06L3GATMA1 INFINEON TECHNOLOGIES IPB016N06L3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 1.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
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CY15B016J-SXA INFINEON TECHNOLOGIES download Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
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CY15B016J-SXAT INFINEON TECHNOLOGIES download Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
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CY15B016J-SXET INFINEON TECHNOLOGIES download Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Memory: 16kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 2kx8bit
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CY15B016Q-SXE INFINEON TECHNOLOGIES Infineon-CY15B016Q_16_KBIT_(2K_X_8)_SERIAL_(SPI)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3f9176a99&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 3÷3.6VDC; 16MHz; SOIC8
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Memory: 16kb FRAM
Clock frequency: 16MHz
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
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CY15B016Q-SXET INFINEON TECHNOLOGIES Infineon-CY15B016Q_16_KBIT_(2K_X_8)_SERIAL_(SPI)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3f9176a99&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 3÷3.6VDC; 16MHz; SOIC8
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Memory: 16kb FRAM
Clock frequency: 16MHz
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
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IDH20G65C6XKSA1 IDH20G65C6XKSA1 INFINEON TECHNOLOGIES IDH20G65C6.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 6G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 79A
Leakage current: 153µA
Power dissipation: 108W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Produkt ist nicht verfügbar
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IPD30N06S2L23ATMA3 INFINEON TECHNOLOGIES Infineon-IPD30N06S2L_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433bafe5d69 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 55V; 30A; Idm: 30A; 100W; PG-TO252-3-11
Application: automotive industry
Gate-source voltage: 20V
Pulsed drain current: 30A
Power dissipation: 100W
Case: PG-TO252-3-11
Kind of channel: enhancement
Polarisation: N
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 30A
Drain-source voltage: 55V
Gate charge: 42nC
On-state resistance: 23mΩ
auf Bestellung 460000 Stücke:
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SPW32N50C3FKSA1 SPW32N50C3FKSA1 INFINEON TECHNOLOGIES SPW32N50C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d1edf480e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 32A; 284W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 32A
Case: TO247-3
On-state resistance: 0.11Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 170nC
Power dissipation: 284W
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12+6.33 EUR
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SLB9670VQ20FW785XTMA1 INFINEON TECHNOLOGIES Infineon-SLB%209670VQ2.0-DataSheet-v01_04-EN.pdf?fileId=5546d4626fc1ce0b016fc78270350cd6 Category: Unclassified
Description: SLB9670VQ20FW785XTMA1
auf Bestellung 105000 Stücke:
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IKW75N65EL5XKSA1 INFINEON TECHNOLOGIES Infineon-IKW75N65EL5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd6e4e3acf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 650V; 80A; 536W; TO247-3
Type of transistor: IGBT
Technology: Trench
Power dissipation: 536W
Case: TO247-3
Mounting: THT
Collector current: 80A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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DZ600N12K DZ600N12K INFINEON TECHNOLOGIES DZ600N18K.pdf Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 600A
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ND89N12KHPSA1 INFINEON TECHNOLOGIES INFNS29284-1.pdf?t.download=true&u=5oefqw Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 89A; BG-PB20-1; Ufmax: 1.5V
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 89A
Case: BG-PB20-1
Max. forward voltage: 1.5V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
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TD210N12KOF TD210N12KOF INFINEON TECHNOLOGIES TD210N12KOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 210A; BG-PB50-1; Ufmax: 1.65V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 210A
Case: BG-PB50-1
Max. forward voltage: 1.65V
Max. forward impulse current: 6.6kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 410A
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DD104N12KHPSA1 DD104N12KHPSA1 INFINEON TECHNOLOGIES DD104N18K.pdf Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 104A; BG-PB20-1; screw
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 104A
Case: BG-PB20-1
Max. forward voltage: 1.4V
Max. forward impulse current: 2.5kA
Electrical mounting: screw
Mechanical mounting: screw
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TT104N12KOFHPSA1 TT104N12KOFHPSA1 INFINEON TECHNOLOGIES TT104N14KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 104A; BG-PB20-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 104A
Case: BG-PB20-1
Max. forward voltage: 1.62V
Max. forward impulse current: 2.05kA
Gate current: 120mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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TT104N12KOFKHPSA1 TT104N12KOFKHPSA1 INFINEON TECHNOLOGIES TT104N_Type.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 104A; BG-PB20-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 104A
Case: BG-PB20-1
Max. forward voltage: 1.62V
Max. forward impulse current: 2.05kA
Gate current: 120mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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DD89N12KHPSA1 INFINEON TECHNOLOGIES INFNS29284-1.pdf?t.download=true&u=5oefqw Category: Diode modules
Description: Module: diode; 1.2kV; 2.8kA
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DD171N12KKHPSA2 INFINEON TECHNOLOGIES Infineon-DD171N-DataSheet-v03_01-EN.pdf Category: Diode modules
Description: Module: diode; 1.2kV
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IPD090N03LGATMA1 IPD090N03LGATMA1 INFINEON TECHNOLOGIES IPD090N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 42W
Drain current: 30A
Technology: OptiMOS™ 3
auf Bestellung 2144 Stücke:
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120+0.6 EUR
129+0.55 EUR
136+0.53 EUR
155+0.46 EUR
159+0.45 EUR
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IPD90N06S404ATMA2 INFINEON TECHNOLOGIES INFNS13309-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 150W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Case: DPAK3
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 150W
Drain current: 90A
Gate charge: 128nC
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IPD90N06S407ATMA2 INFINEON TECHNOLOGIES Infineon-IPD90N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff988150120386e3b5b0c87 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; Idm: 360A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 79W
Drain current: 63A
Pulsed drain current: 360A
Gate charge: 56nC
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IPD90N06S4L03ATMA2 INFINEON TECHNOLOGIES Infineon-IPD90N06S4L_03-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203869e3b30c7d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 150W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Case: DPAK; TO252
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 150W
Drain current: 90A
Application: automotive industry
Gate charge: 170nC
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IPD90N08S405ATMA1 INFINEON TECHNOLOGIES Infineon-IPD90N08S4-05-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c88704c7a01887149637d3941 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; 144W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Case: DPAK; TO252
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 144W
Drain current: 90A
Application: automotive industry
Gate charge: 68nC
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IPB090N06N3GATMA1 IPB090N06N3GATMA1 INFINEON TECHNOLOGIES IPB090N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 71W
Drain current: 50A
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC090N03LSGATMA1 BSC090N03LSGATMA1 INFINEON TECHNOLOGIES BSC090N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 32W
Drain current: 39A
Technology: OptiMOS™ 3
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IPD90N06S4L03ATMA2 INFINEON TECHNOLOGIES Infineon-IPD90N06S4L_03-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203869e3b30c7d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 90A; Idm: 90A; 150W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Case: DPAK; TO252
Gate-source voltage: 16V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 150W
Drain current: 90A
Pulsed drain current: 90A
Application: automotive industry
Technology: MOSFET
Gate charge: 170nC
auf Bestellung 2500 Stücke:
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2500+1.34 EUR
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IRF7410TRPBF IRF7410TRPBF INFINEON TECHNOLOGIES irf7410pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -16A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Technology: HEXFET®
auf Bestellung 3856 Stücke:
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68+1.06 EUR
77+0.93 EUR
100+0.73 EUR
500+0.58 EUR
1000+0.56 EUR
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SMBT2907AE6327HTSA1 SMBT2907AE6327HTSA1 INFINEON TECHNOLOGIES SMBT2907AE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
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IRFP4110PBF IRFP4110PBF INFINEON TECHNOLOGIES irfp4110pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 4.5mΩ
Gate-source voltage: ±20V
Gate charge: 150nC
Technology: HEXFET®
Power dissipation: 370W
Produkt ist nicht verfügbar
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IRS2103SPBF IRS2103SPBF INFINEON TECHNOLOGIES irs2103.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
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IKA08N65F5XKSA1 INFINEON TECHNOLOGIES DS_IKA08N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af92196985c58 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 6.8A; 15.6W; TO220FP; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 15.6W
Case: TO220FP
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Collector current: 6.8A
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Collector-emitter voltage: 650V
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BSP317PH6327XTSA1 BSP317PH6327XTSA1 INFINEON TECHNOLOGIES BSP317PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Case: PG-SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -430mA
On-state resistance: 4Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
auf Bestellung 2417 Stücke:
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64+1.13 EUR
95+0.76 EUR
140+0.51 EUR
250+0.44 EUR
500+0.4 EUR
1000+0.36 EUR
2000+0.34 EUR
Mindestbestellmenge: 64
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IPW65R041CFDFKSA2 INFINEON TECHNOLOGIES Infineon-IPW65R041CFD-DS-v02_00-en.pdf?fileId=db3a3043337a914d01338408155d60f9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 650V; 68.5A; 500W; TO247-3
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 650V
Drain current: 68.5A
Power dissipation: 500W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 41mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)
30+12.14 EUR
Mindestbestellmenge: 30
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DD160N22K DD160N22K INFINEON TECHNOLOGIES DD160N22K.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 160A; BG-PB34-1; screw
Case: BG-PB34-1
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.4V
Load current: 160A
Max. forward impulse current: 4.6kA
Max. off-state voltage: 2.2kV
Semiconductor structure: double series
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
1+269.3 EUR
3+225.25 EUR
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IRLL024ZTRPBF IRLL024ZTRPBF INFINEON TECHNOLOGIES irll024zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 40A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Pulsed drain current: 40A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2022 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
146+0.49 EUR
Mindestbestellmenge: 139
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IPD50N03S4L06ATMA1 INFINEON TECHNOLOGIES INFNS15258-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 56W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: DPAK; TO252
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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IPP050N03LF2SAKSA1 INFINEON TECHNOLOGIES Infineon-IPP050N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fdfcd342466 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS31N20DTRLP IRFS31N20DTRLP INFINEON TECHNOLOGIES irfb31n20dpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ150N10LS3GATMA1 BSZ150N10LS3GATMA1 INFINEON TECHNOLOGIES BSZ150N10LS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUT150N10S5N035ATMA1 IAUT150N10S5N035ATMA1 INFINEON TECHNOLOGIES IAUT150N10S5N035.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 166W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP052NE7N3GXKSA1 IPP052NE7N3G-DTE.pdf
IPP052NE7N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.7 EUR
45+1.62 EUR
51+1.42 EUR
59+1.22 EUR
Mindestbestellmenge: 43
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IRF40R207 IRF40R207.pdf
IRF40R207
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 45nC
On-state resistance: 5.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 64A
Power dissipation: 83W
auf Bestellung 516 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
114+0.63 EUR
135+0.53 EUR
147+0.49 EUR
250+0.43 EUR
500+0.4 EUR
Mindestbestellmenge: 91
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IPB016N06L3GATMA1 IPB016N06L3G-DTE.pdf
IPB016N06L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 1.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Produkt ist nicht verfügbar
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CY15B016J-SXA download
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
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CY15B016J-SXAT download
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
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CY15B016J-SXET download
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Memory: 16kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
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CY15B016Q-SXE Infineon-CY15B016Q_16_KBIT_(2K_X_8)_SERIAL_(SPI)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3f9176a99&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 3÷3.6VDC; 16MHz; SOIC8
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Memory: 16kb FRAM
Clock frequency: 16MHz
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
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CY15B016Q-SXET Infineon-CY15B016Q_16_KBIT_(2K_X_8)_SERIAL_(SPI)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3f9176a99&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 3÷3.6VDC; 16MHz; SOIC8
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Memory: 16kb FRAM
Clock frequency: 16MHz
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
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IDH20G65C6XKSA1 IDH20G65C6.pdf
IDH20G65C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 6G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 79A
Leakage current: 153µA
Power dissipation: 108W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Produkt ist nicht verfügbar
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IPD30N06S2L23ATMA3 Infineon-IPD30N06S2L_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433bafe5d69
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 55V; 30A; Idm: 30A; 100W; PG-TO252-3-11
Application: automotive industry
Gate-source voltage: 20V
Pulsed drain current: 30A
Power dissipation: 100W
Case: PG-TO252-3-11
Kind of channel: enhancement
Polarisation: N
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 30A
Drain-source voltage: 55V
Gate charge: 42nC
On-state resistance: 23mΩ
auf Bestellung 460000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.65 EUR
Mindestbestellmenge: 2500
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SPW32N50C3FKSA1 SPW32N50C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d1edf480e
SPW32N50C3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 32A; 284W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 32A
Case: TO247-3
On-state resistance: 0.11Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 170nC
Power dissipation: 284W
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.04 EUR
12+6.33 EUR
30+5.86 EUR
Mindestbestellmenge: 11
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SLB9670VQ20FW785XTMA1 Infineon-SLB%209670VQ2.0-DataSheet-v01_04-EN.pdf?fileId=5546d4626fc1ce0b016fc78270350cd6
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: SLB9670VQ20FW785XTMA1
auf Bestellung 105000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+2.99 EUR
Mindestbestellmenge: 5000
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IKW75N65EL5XKSA1 Infineon-IKW75N65EL5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd6e4e3acf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 650V; 80A; 536W; TO247-3
Type of transistor: IGBT
Technology: Trench
Power dissipation: 536W
Case: TO247-3
Mounting: THT
Collector current: 80A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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DZ600N12K DZ600N18K.pdf
DZ600N12K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 600A
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+395.14 EUR
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ND89N12KHPSA1 INFNS29284-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 89A; BG-PB20-1; Ufmax: 1.5V
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 89A
Case: BG-PB20-1
Max. forward voltage: 1.5V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TD210N12KOF TD210N12KOF.pdf
TD210N12KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 210A; BG-PB50-1; Ufmax: 1.65V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 210A
Case: BG-PB50-1
Max. forward voltage: 1.65V
Max. forward impulse current: 6.6kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 410A
Produkt ist nicht verfügbar
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DD104N12KHPSA1 DD104N18K.pdf
DD104N12KHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 104A; BG-PB20-1; screw
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 104A
Case: BG-PB20-1
Max. forward voltage: 1.4V
Max. forward impulse current: 2.5kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TT104N12KOFHPSA1 TT104N14KOF.pdf
TT104N12KOFHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 104A; BG-PB20-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 104A
Case: BG-PB20-1
Max. forward voltage: 1.62V
Max. forward impulse current: 2.05kA
Gate current: 120mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TT104N12KOFKHPSA1 TT104N_Type.pdf
TT104N12KOFKHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 104A; BG-PB20-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 104A
Case: BG-PB20-1
Max. forward voltage: 1.62V
Max. forward impulse current: 2.05kA
Gate current: 120mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DD89N12KHPSA1 INFNS29284-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; 1.2kV; 2.8kA
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
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DD171N12KKHPSA2 Infineon-DD171N-DataSheet-v03_01-EN.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; 1.2kV
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+209.41 EUR
Mindestbestellmenge: 8
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IPD090N03LGATMA1 IPD090N03LG-DTE.pdf
IPD090N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 42W
Drain current: 30A
Technology: OptiMOS™ 3
auf Bestellung 2144 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
129+0.55 EUR
136+0.53 EUR
155+0.46 EUR
159+0.45 EUR
Mindestbestellmenge: 120
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IPD90N06S404ATMA2 INFNS13309-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 150W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Case: DPAK3
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 150W
Drain current: 90A
Gate charge: 128nC
Produkt ist nicht verfügbar
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IPD90N06S407ATMA2 Infineon-IPD90N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff988150120386e3b5b0c87
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; Idm: 360A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 79W
Drain current: 63A
Pulsed drain current: 360A
Gate charge: 56nC
Produkt ist nicht verfügbar
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IPD90N06S4L03ATMA2 Infineon-IPD90N06S4L_03-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203869e3b30c7d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 150W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Case: DPAK; TO252
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 150W
Drain current: 90A
Application: automotive industry
Gate charge: 170nC
Produkt ist nicht verfügbar
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IPD90N08S405ATMA1 Infineon-IPD90N08S4-05-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c88704c7a01887149637d3941
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; 144W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Case: DPAK; TO252
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 144W
Drain current: 90A
Application: automotive industry
Gate charge: 68nC
Produkt ist nicht verfügbar
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IPB090N06N3GATMA1 IPB090N06N3G-DTE.pdf
IPB090N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 71W
Drain current: 50A
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC090N03LSGATMA1 BSC090N03LSG-DTE.pdf
BSC090N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 32W
Drain current: 39A
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPD90N06S4L03ATMA2 Infineon-IPD90N06S4L_03-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203869e3b30c7d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 90A; Idm: 90A; 150W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Case: DPAK; TO252
Gate-source voltage: 16V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 150W
Drain current: 90A
Pulsed drain current: 90A
Application: automotive industry
Technology: MOSFET
Gate charge: 170nC
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.34 EUR
Mindestbestellmenge: 2500
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IRF7410TRPBF irf7410pbf.pdf
IRF7410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -16A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Technology: HEXFET®
auf Bestellung 3856 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
77+0.93 EUR
100+0.73 EUR
500+0.58 EUR
1000+0.56 EUR
Mindestbestellmenge: 68
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SMBT2907AE6327HTSA1 SMBT2907AE6327.pdf
SMBT2907AE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
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IRFP4110PBF irfp4110pbf.pdf
IRFP4110PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 4.5mΩ
Gate-source voltage: ±20V
Gate charge: 150nC
Technology: HEXFET®
Power dissipation: 370W
Produkt ist nicht verfügbar
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IRS2103SPBF irs2103.pdf
IRS2103SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
Produkt ist nicht verfügbar
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IKA08N65F5XKSA1 DS_IKA08N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af92196985c58
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 6.8A; 15.6W; TO220FP; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 15.6W
Case: TO220FP
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Collector current: 6.8A
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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BSP317PH6327XTSA1 BSP317PH6327XTSA1-dte.pdf
BSP317PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Case: PG-SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -430mA
On-state resistance: 4Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
auf Bestellung 2417 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
95+0.76 EUR
140+0.51 EUR
250+0.44 EUR
500+0.4 EUR
1000+0.36 EUR
2000+0.34 EUR
Mindestbestellmenge: 64
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IPW65R041CFDFKSA2 Infineon-IPW65R041CFD-DS-v02_00-en.pdf?fileId=db3a3043337a914d01338408155d60f9
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 650V; 68.5A; 500W; TO247-3
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 650V
Drain current: 68.5A
Power dissipation: 500W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 41mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+12.14 EUR
Mindestbestellmenge: 30
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DD160N22K DD160N22K.pdf
DD160N22K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 160A; BG-PB34-1; screw
Case: BG-PB34-1
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.4V
Load current: 160A
Max. forward impulse current: 4.6kA
Max. off-state voltage: 2.2kV
Semiconductor structure: double series
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+269.3 EUR
3+225.25 EUR
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IRLL024ZTRPBF irll024zpbf.pdf
IRLL024ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 40A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Pulsed drain current: 40A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2022 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
146+0.49 EUR
Mindestbestellmenge: 139
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IPD50N03S4L06ATMA1 INFNS15258-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 56W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: DPAK; TO252
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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IPP050N03LF2SAKSA1 Infineon-IPP050N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fdfcd342466
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS31N20DTRLP irfb31n20dpbf.pdf
IRFS31N20DTRLP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ150N10LS3GATMA1 BSZ150N10LS3G-DTE.pdf
BSZ150N10LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUT150N10S5N035ATMA1 IAUT150N10S5N035.pdf
IAUT150N10S5N035ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 166W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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