Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149672) > Seite 2493 nach 2495

Wählen Sie Seite:   [  << Vorherige Seite ]  1 249 498 747 996 1245 1494 1743 1992 2241 2488 2489 2490 2491 2492 2493 2494 2495  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
BSC026N04LSATMA1 BSC026N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C28471E353E11C&compId=BSC026N04LS-DTE.pdf?ci_sign=95197db971ae602846dd7418207997742f7e4fba Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 63W; PG-TDSON-8
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC026NE2LS5ATMA1 BSC026NE2LS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C287232F8F811C&compId=BSC026NE2LS5-DTE.pdf?ci_sign=9ba57efedcf67f25fbe19cd1bedc471bcf370d94 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 66A; 29W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 66A
Power dissipation: 29W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC032NE2LSATMA1 BSC032NE2LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2A99160AE011C&compId=BSC032NE2LS-DTE.pdf?ci_sign=fba83687b313e70a9dcdb9920d08f73dceae32cc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 84A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 84A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC0904NSIATMA1 BSC0904NSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38758E954B4211C&compId=BSC0904NSI-DTE.pdf?ci_sign=e9c94f7c05748051f1ed689d5cad20d2a4808e92 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP016N06NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP016N06NF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c80f4d3290180fd60a1443c7d Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.57 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1061GE30-10BV1XIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1041GE30-10ZSXIT INFINEON TECHNOLOGIES Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1061GE30-10BV1XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1061GE30-10BVJXI INFINEON TECHNOLOGIES Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1061GE30-10BVXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1061GE30-10ZSXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1061GE30-10BVXI INFINEON TECHNOLOGIES Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1061GE30-10ZSXI INFINEON TECHNOLOGIES Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP296NH6433XTMA1 INFINEON TECHNOLOGIES BSP296N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd5af675d001f Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.34 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
IPB600N25N3GATMA1 IPB600N25N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC3B5872EA11C&compId=IPB600N25N3G-DTE.pdf?ci_sign=0c8b0a11b5bacba491b0b72986cefacf94736e41 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIPS7091GTR AUIPS7091GTR INFINEON TECHNOLOGIES auips7091.pdf?fileId=5546d462533600a4015355a7c0d21322 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.12Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4435DYTRPBF SI4435DYTRPBF INFINEON TECHNOLOGIES si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2945 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.17 EUR
85+0.85 EUR
166+0.43 EUR
175+0.41 EUR
2000+0.40 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
BAS12507WH6327XTSA1 BAS12507WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF13B870A32469&compId=BAS125-0xW.pdf?ci_sign=f5f44dc4e7ac8e846a5816e0f88ba496aa18aa00 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 25V; 0.1A; 250mW
Mounting: SMD
Case: SOT343
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double independent
Max. forward impulse current: 0.5A
Power dissipation: 0.25W
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9250XSJXUMA1 TLE9250XSJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B8F0D2A09A53D6&compId=TLE9250X.pdf?ci_sign=6fe83aa8e5c15628008a3e39793af6518485ff06 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9250SJXUMA1 TLE9250SJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B7D453D3C213D6&compId=TLE9250.pdf?ci_sign=27ba1db29d95de7cb919defc054a8b5952db1824 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9250VSJXUMA1 TLE9250VSJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B8ED46D599F3D6&compId=TLE9250V.pdf?ci_sign=9527e63d6b8a7c9a9723676138a31f8f8e6d0361 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFHM9331TRPBF IRFHM9331TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BBF9CE5E22F1A303005056AB0C4F&compId=irfhm9331pbf.pdf?ci_sign=8cc3c5ff5376bc1ed9debc3ee244e7b25088f040 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; 2.8W; PQFN3.3X3.3
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -9A
Type of transistor: P-MOSFET
Power dissipation: 2.8W
auf Bestellung 3450 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
107+0.67 EUR
203+0.35 EUR
215+0.33 EUR
2000+0.32 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
IRFH9310TRPBF IRFH9310TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BAE9CF58A4F1A303005056AB0C4F&compId=irfh9310pbf.pdf?ci_sign=48812bd2ff057ffc8ba4f95f0f18c126be688947 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; 3.1W; PQFN5X6
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -17A
Type of transistor: P-MOSFET
Power dissipation: 3.1W
auf Bestellung 3480 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
48+1.52 EUR
61+1.19 EUR
65+1.12 EUR
250+1.07 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IR4311MTRPBF IR4311MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC33777F7675EA&compId=IR4311MTRPBF.pdf?ci_sign=5a483b99b10824afc59ab00c4bd5168595648f79 Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; Ch: 1; Amp.class: D; PQFN5X6
Type of integrated circuit: audio amplifier
Case: PQFN5X6
Mounting: SMD
Amplifier class: D
Number of channels: 1
Output power: 35W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR4312MTRPBF IR4312MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC35B0725435EA&compId=IR4312MTRPBF.pdf?ci_sign=4da8d2b0f175fe9c3d571fc5f1b21876e749c2d2 Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; Ch: 2; Amp.class: D; PQFN7X7
Type of integrated circuit: audio amplifier
Case: PQFN7X7
Mounting: SMD
Amplifier class: D
Number of channels: 2
Output power: 35W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFHM3911TRPBF INFINEON TECHNOLOGIES irfhm3911pbf.pdf?fileId=5546d462533600a40153561ff23f1f2b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; PQFN8
Case: PQFN8
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 3.2A
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29JL064J55TFI003 INFINEON TECHNOLOGIES Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Operating temperature: -40...85°C
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 64Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA65R400CEXKSA1 INFINEON TECHNOLOGIES Infineon-IPA65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384fc4e327493 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.97 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099C6FKSA1 IPW60R099C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5952403C1FAD1BF&compId=IPW60R099C6-DTE.pdf?ci_sign=0ff4e9262369219235dac83c27672666e66fcd60 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R1K5CEATMA1 IPN70R1K5CEATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA41A369E46143&compId=IPN70R1K5CE.pdf?ci_sign=7b64cee31104df33c4e4b91fb5a60fa891f6314b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.4A; 5W; PG-SOT223
Mounting: SMD
Drain-source voltage: 700V
Drain current: 3.4A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 10.5nC
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-SOT223
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R1K0CEATMA1 IPN70R1K0CEATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA457EA6188143&compId=IPN70R1K0CE.pdf?ci_sign=fdb6d19cf093910697e21e04ce0a35d5565b49ea Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 5W; PG-SOT223
Mounting: SMD
Drain-source voltage: 700V
Drain current: 4.7A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 15.2nC
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-SOT223
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R1K5CEATMA1 INFINEON TECHNOLOGIES Infineon-IPN60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af653155b49 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; Idm: 8.4A; 5W; PG-SOT223
Mounting: SMD
Drain-source voltage: 650V
Drain current: 3.2A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 8.4A
Case: PG-SOT223
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTN8962TAAUMA1 BTN8962TAAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF185DE8D6A8745&compId=BTN8962TA.pdf?ci_sign=6c5456d10cf0b4baf788f9d1d1f4df19bed07ba9 Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Technology: NovalithIC™
Case: PG-TO263-7
Output current: -27...30A
Number of channels: 1
Mounting: SMD
On-state resistance: 14.2mΩ
Operating temperature: -40...150°C
Operating voltage: 5.5...40V DC
Kind of package: reel; tape
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.51 EUR
16+4.59 EUR
17+4.33 EUR
100+4.16 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
S25FS064SAGNFB033 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: LGA8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9255WLCXUMA1 INFINEON TECHNOLOGIES Infineon-TLE9255W-DS-v01_01-EN.pdf?fileId=5546d4625bd71aa0015c10eaeaf93ee5 Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 8197 Stücke:
Lieferzeit 14-21 Tag (e)
5000+2.20 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
SN7002NH6433XTMA1 SN7002NH6433XTMA1 INFINEON TECHNOLOGIES Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23
Power dissipation: 0.36W
Case: SOT23
Drain-source voltage: 60V
Drain current: 0.16A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 5260 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
407+0.18 EUR
573+0.12 EUR
665+0.11 EUR
1257+0.06 EUR
1330+0.05 EUR
5000+0.05 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
IPD70R900P7SAUMA1 IPD70R900P7SAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD1AC19AA1CA259&compId=IPD70R900P7S.pdf?ci_sign=746f7b1943fba9fedd7a1fb78f582f1027187f3b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 30.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R900P7SATMA1 IPN70R900P7SATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA526BEF5A6143&compId=IPN70R900P7S.pdf?ci_sign=003efb79197d315493859738eb83e97ee6904935 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 6.5W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 6.5W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9393TRPBF IRF9393TRPBF INFINEON TECHNOLOGIES irf9393pbf.pdf?fileId=5546d462533600a401535611877d1db3 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.3A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.3A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 19.4mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1143 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
123+0.58 EUR
153+0.47 EUR
228+0.31 EUR
241+0.30 EUR
500+0.29 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
IRF7241TRPBF IRF7241TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F7487F4D128F1A303005056AB0C4F&compId=irf7241pbf.pdf?ci_sign=3e6eac7109da8f3470ac2e7a87b7804a4856b55f description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.2A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1245 Stücke:
Lieferzeit 14-21 Tag (e)
58+1.24 EUR
72+1.00 EUR
86+0.84 EUR
109+0.66 EUR
115+0.62 EUR
120+0.60 EUR
Mindestbestellmenge: 58
Im Einkaufswagen  Stück im Wert von  UAH
IRF7853TRPBF IRF7853TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221ACADC1744FF1A303005056AB0C4F&compId=irf7853pbf.pdf?ci_sign=762e5bbe579c52533e9d1ea151045720ed42c301 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3900 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.89 EUR
56+1.28 EUR
111+0.65 EUR
117+0.61 EUR
2000+0.59 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
IRF8714TRPBFXTMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF8721TRPBFXTMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF8910TRPBFXTMA1 INFINEON TECHNOLOGIES Infineon-IRF8910-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535610ec101d8d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7820TRPBF INFINEON TECHNOLOGIES irf7820pbf.pdf?fileId=5546d462533600a401535608c10e1d00 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.7A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.7A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9362TRPBF IRF9362TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B00322F7EAF1A303005056AB0C4F&compId=irf9362pbf.pdf?ci_sign=daec17103d69b620a36fa31b8c45e333a8f32cd4 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7726TRPBF IRF7726TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A951477A7EF1A303005056AB0C4F&compId=irf7726pbf.pdf?ci_sign=18e076f8196dbaf0bc2fffd1cd427303b0a4cb12 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.79W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.79W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD90P04P405ATMA2 INFINEON TECHNOLOGIES Infineon-IPD90P04P4-05-DataSheet-v01_02-EN.pdf?fileId=db3a304329a0f6ee0129dbba2b4d5c79 Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.30 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4137PBF IRFB4137PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA26580F5B5EA&compId=IRFB4137PBF.pdf?ci_sign=5b0ba6a15b558079509649f4bc5e8ff398f62088 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 341W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.25 EUR
23+3.10 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
TLE4913HTSA1 INFINEON TECHNOLOGIES Infineon-TLE4913-DS-v02_03-EN.pdf?fileId=5546d46269e1c019016ac0287fa13265 Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SC59; -5÷5mT; Usup: 2.4÷5.5VDC; SMT
Operating temperature: -40...85°C
Case: SC59
Supply voltage: 2.4...5.5V DC
Kind of sensor: omnipolar
Type of sensor: Hall
Range of detectable magnetic field: -5...5mT
Mounting: SMT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HFA15TB60PBF HFA15TB60PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE199EC7C4E53D7&compId=HFA15TB60PBF.pdf?ci_sign=aa7794cbe61f5bdba40b13e16af0caf8ed825376 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; Ufmax: 1.7V; 29W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 74ns
Power dissipation: 29W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4410ZTRLPBF INFINEON TECHNOLOGIES irfb4410zpbf.pdf?fileId=5546d462533600a40153561644141e3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 69A
Pulsed drain current: 390A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF8721TRPBF IRF8721TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AE4CA56DBBF1A303005056AB0C4F&compId=irf8721pbf.pdf?ci_sign=4d7ba651820880c0d9f9856e81437904f3f7d3b6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2.5W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGX50AE6327 BGX50AE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EB833A719C42469&compId=BGX50AE6327.pdf?ci_sign=31c8574b03909b1c4b15ea8d7da7173be948042b Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.14A; SOT143; 210mW; reel,tape
Max. off-state voltage: 50V
Load current: 0.14A
Case: SOT143
Semiconductor structure: bridge rectifier
Features of semiconductor devices: fast switching
Mounting: SMD
Power dissipation: 0.21W
Kind of package: reel; tape
Type of diode: switching
auf Bestellung 1086 Stücke:
Lieferzeit 14-21 Tag (e)
414+0.17 EUR
468+0.15 EUR
603+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 414
Im Einkaufswagen  Stück im Wert von  UAH
IDH02G120C5XKSA1 IDH02G120C5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB83CA5339CAFA8&compId=IDH02G120C5-DTE.pdf?ci_sign=c0376ff0f508097055bda59dd691f57aee3224bb Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; PG-TO220-2; 75W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Max. forward voltage: 1.4V
Max. forward impulse current: 37A
Leakage current: 1.2µA
Power dissipation: 75W
Technology: CoolSiC™ 5G; SiC
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.55 EUR
35+2.10 EUR
36+1.99 EUR
250+1.96 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IMZA65R048M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMZA65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d9ac090535 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMZA65R072M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMZA65R072M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85e97cf305b9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 69A
Power dissipation: 96W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TT251N12KOFHPSA1 TT251N12KOFHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE787EB8C9E469&compId=TT251N18KOF.pdf?ci_sign=3a12e8551cff06ea6af1b7da4fcd294bd77f4081 Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 251A; BG-PB50-1; screw
Case: BG-PB50-1
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 251A
Semiconductor structure: double series
Gate current: 300mA
Max. forward impulse current: 9.1kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP041N12N3GXKSA1 IPP041N12N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC7293DEAA811C&compId=IPP041N12N3G-DTE.pdf?ci_sign=1cc97405361528b7e9c295ad1d3fccf8117bba59 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI041N12N3GAKSA1 IPI041N12N3GAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC21DBFD4B011C&compId=IPI041N12N3G-DTE.pdf?ci_sign=25bd54334b52dd5ae3f6d525c0226e6d776aae3e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Case: PG-TO262-3
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC026N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C28471E353E11C&compId=BSC026N04LS-DTE.pdf?ci_sign=95197db971ae602846dd7418207997742f7e4fba
BSC026N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 63W; PG-TDSON-8
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC026NE2LS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C287232F8F811C&compId=BSC026NE2LS5-DTE.pdf?ci_sign=9ba57efedcf67f25fbe19cd1bedc471bcf370d94
BSC026NE2LS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 66A; 29W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 66A
Power dissipation: 29W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC032NE2LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2A99160AE011C&compId=BSC032NE2LS-DTE.pdf?ci_sign=fba83687b313e70a9dcdb9920d08f73dceae32cc
BSC032NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 84A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 84A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC0904NSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38758E954B4211C&compId=BSC0904NSI-DTE.pdf?ci_sign=e9c94f7c05748051f1ed689d5cad20d2a4808e92
BSC0904NSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP016N06NF2SAKMA1 Infineon-IPP016N06NF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c80f4d3290180fd60a1443c7d
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.57 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1061GE30-10BV1XIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1041GE30-10ZSXIT Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1061GE30-10BV1XI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1061GE30-10BVJXI Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1061GE30-10BVXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1061GE30-10ZSXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1061GE30-10BVXI Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1061GE30-10ZSXI Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP296NH6433XTMA1 BSP296N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd5af675d001f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.34 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
IPB600N25N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC3B5872EA11C&compId=IPB600N25N3G-DTE.pdf?ci_sign=0c8b0a11b5bacba491b0b72986cefacf94736e41
IPB600N25N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIPS7091GTR auips7091.pdf?fileId=5546d462533600a4015355a7c0d21322
AUIPS7091GTR
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.12Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4435DYTRPBF description si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983
SI4435DYTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2945 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
85+0.85 EUR
166+0.43 EUR
175+0.41 EUR
2000+0.40 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
BAS12507WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF13B870A32469&compId=BAS125-0xW.pdf?ci_sign=f5f44dc4e7ac8e846a5816e0f88ba496aa18aa00
BAS12507WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 25V; 0.1A; 250mW
Mounting: SMD
Case: SOT343
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double independent
Max. forward impulse current: 0.5A
Power dissipation: 0.25W
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9250XSJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B8F0D2A09A53D6&compId=TLE9250X.pdf?ci_sign=6fe83aa8e5c15628008a3e39793af6518485ff06
TLE9250XSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9250SJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B7D453D3C213D6&compId=TLE9250.pdf?ci_sign=27ba1db29d95de7cb919defc054a8b5952db1824
TLE9250SJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9250VSJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B8ED46D599F3D6&compId=TLE9250V.pdf?ci_sign=9527e63d6b8a7c9a9723676138a31f8f8e6d0361
TLE9250VSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFHM9331TRPBF pVersion=0046&contRep=ZT&docId=E221BBF9CE5E22F1A303005056AB0C4F&compId=irfhm9331pbf.pdf?ci_sign=8cc3c5ff5376bc1ed9debc3ee244e7b25088f040
IRFHM9331TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; 2.8W; PQFN3.3X3.3
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -9A
Type of transistor: P-MOSFET
Power dissipation: 2.8W
auf Bestellung 3450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
107+0.67 EUR
203+0.35 EUR
215+0.33 EUR
2000+0.32 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
IRFH9310TRPBF pVersion=0046&contRep=ZT&docId=E221BAE9CF58A4F1A303005056AB0C4F&compId=irfh9310pbf.pdf?ci_sign=48812bd2ff057ffc8ba4f95f0f18c126be688947
IRFH9310TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; 3.1W; PQFN5X6
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -17A
Type of transistor: P-MOSFET
Power dissipation: 3.1W
auf Bestellung 3480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
48+1.52 EUR
61+1.19 EUR
65+1.12 EUR
250+1.07 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IR4311MTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC33777F7675EA&compId=IR4311MTRPBF.pdf?ci_sign=5a483b99b10824afc59ab00c4bd5168595648f79
IR4311MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; Ch: 1; Amp.class: D; PQFN5X6
Type of integrated circuit: audio amplifier
Case: PQFN5X6
Mounting: SMD
Amplifier class: D
Number of channels: 1
Output power: 35W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR4312MTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC35B0725435EA&compId=IR4312MTRPBF.pdf?ci_sign=4da8d2b0f175fe9c3d571fc5f1b21876e749c2d2
IR4312MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; Ch: 2; Amp.class: D; PQFN7X7
Type of integrated circuit: audio amplifier
Case: PQFN7X7
Mounting: SMD
Amplifier class: D
Number of channels: 2
Output power: 35W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFHM3911TRPBF irfhm3911pbf.pdf?fileId=5546d462533600a40153561ff23f1f2b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; PQFN8
Case: PQFN8
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 3.2A
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29JL064J55TFI003 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Operating temperature: -40...85°C
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 64Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA65R400CEXKSA1 Infineon-IPA65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384fc4e327493
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.97 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5952403C1FAD1BF&compId=IPW60R099C6-DTE.pdf?ci_sign=0ff4e9262369219235dac83c27672666e66fcd60
IPW60R099C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R1K5CEATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA41A369E46143&compId=IPN70R1K5CE.pdf?ci_sign=7b64cee31104df33c4e4b91fb5a60fa891f6314b
IPN70R1K5CEATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.4A; 5W; PG-SOT223
Mounting: SMD
Drain-source voltage: 700V
Drain current: 3.4A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 10.5nC
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-SOT223
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R1K0CEATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA457EA6188143&compId=IPN70R1K0CE.pdf?ci_sign=fdb6d19cf093910697e21e04ce0a35d5565b49ea
IPN70R1K0CEATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 5W; PG-SOT223
Mounting: SMD
Drain-source voltage: 700V
Drain current: 4.7A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 15.2nC
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-SOT223
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R1K5CEATMA1 Infineon-IPN60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af653155b49
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; Idm: 8.4A; 5W; PG-SOT223
Mounting: SMD
Drain-source voltage: 650V
Drain current: 3.2A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 8.4A
Case: PG-SOT223
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTN8962TAAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF185DE8D6A8745&compId=BTN8962TA.pdf?ci_sign=6c5456d10cf0b4baf788f9d1d1f4df19bed07ba9
BTN8962TAAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Technology: NovalithIC™
Case: PG-TO263-7
Output current: -27...30A
Number of channels: 1
Mounting: SMD
On-state resistance: 14.2mΩ
Operating temperature: -40...150°C
Operating voltage: 5.5...40V DC
Kind of package: reel; tape
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
16+4.59 EUR
17+4.33 EUR
100+4.16 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
S25FS064SAGNFB033
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: LGA8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9255WLCXUMA1 Infineon-TLE9255W-DS-v01_01-EN.pdf?fileId=5546d4625bd71aa0015c10eaeaf93ee5
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 8197 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+2.20 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
SN7002NH6433XTMA1 Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5
SN7002NH6433XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23
Power dissipation: 0.36W
Case: SOT23
Drain-source voltage: 60V
Drain current: 0.16A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 5260 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
407+0.18 EUR
573+0.12 EUR
665+0.11 EUR
1257+0.06 EUR
1330+0.05 EUR
5000+0.05 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
IPD70R900P7SAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD1AC19AA1CA259&compId=IPD70R900P7S.pdf?ci_sign=746f7b1943fba9fedd7a1fb78f582f1027187f3b
IPD70R900P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 30.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R900P7SATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA526BEF5A6143&compId=IPN70R900P7S.pdf?ci_sign=003efb79197d315493859738eb83e97ee6904935
IPN70R900P7SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 6.5W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 6.5W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9393TRPBF irf9393pbf.pdf?fileId=5546d462533600a401535611877d1db3
IRF9393TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.3A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.3A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 19.4mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1143 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
123+0.58 EUR
153+0.47 EUR
228+0.31 EUR
241+0.30 EUR
500+0.29 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
IRF7241TRPBF description pVersion=0046&contRep=ZT&docId=E21F7487F4D128F1A303005056AB0C4F&compId=irf7241pbf.pdf?ci_sign=3e6eac7109da8f3470ac2e7a87b7804a4856b55f
IRF7241TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.2A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1245 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
58+1.24 EUR
72+1.00 EUR
86+0.84 EUR
109+0.66 EUR
115+0.62 EUR
120+0.60 EUR
Mindestbestellmenge: 58
Im Einkaufswagen  Stück im Wert von  UAH
IRF7853TRPBF pVersion=0046&contRep=ZT&docId=E221ACADC1744FF1A303005056AB0C4F&compId=irf7853pbf.pdf?ci_sign=762e5bbe579c52533e9d1ea151045720ed42c301
IRF7853TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
56+1.28 EUR
111+0.65 EUR
117+0.61 EUR
2000+0.59 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
IRF8714TRPBFXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF8721TRPBFXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF8910TRPBFXTMA1 Infineon-IRF8910-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535610ec101d8d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7820TRPBF irf7820pbf.pdf?fileId=5546d462533600a401535608c10e1d00
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.7A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.7A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9362TRPBF pVersion=0046&contRep=ZT&docId=E221B00322F7EAF1A303005056AB0C4F&compId=irf9362pbf.pdf?ci_sign=daec17103d69b620a36fa31b8c45e333a8f32cd4
IRF9362TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7726TRPBF pVersion=0046&contRep=ZT&docId=E221A951477A7EF1A303005056AB0C4F&compId=irf7726pbf.pdf?ci_sign=18e076f8196dbaf0bc2fffd1cd427303b0a4cb12
IRF7726TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.79W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.79W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD90P04P405ATMA2 Infineon-IPD90P04P4-05-DataSheet-v01_02-EN.pdf?fileId=db3a304329a0f6ee0129dbba2b4d5c79
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.30 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4137PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA26580F5B5EA&compId=IRFB4137PBF.pdf?ci_sign=5b0ba6a15b558079509649f4bc5e8ff398f62088
IRFB4137PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 341W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.25 EUR
23+3.10 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
TLE4913HTSA1 Infineon-TLE4913-DS-v02_03-EN.pdf?fileId=5546d46269e1c019016ac0287fa13265
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SC59; -5÷5mT; Usup: 2.4÷5.5VDC; SMT
Operating temperature: -40...85°C
Case: SC59
Supply voltage: 2.4...5.5V DC
Kind of sensor: omnipolar
Type of sensor: Hall
Range of detectable magnetic field: -5...5mT
Mounting: SMT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HFA15TB60PBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE199EC7C4E53D7&compId=HFA15TB60PBF.pdf?ci_sign=aa7794cbe61f5bdba40b13e16af0caf8ed825376
HFA15TB60PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; Ufmax: 1.7V; 29W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 74ns
Power dissipation: 29W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4410ZTRLPBF irfb4410zpbf.pdf?fileId=5546d462533600a40153561644141e3a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 69A
Pulsed drain current: 390A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF8721TRPBF pVersion=0046&contRep=ZT&docId=E221AE4CA56DBBF1A303005056AB0C4F&compId=irf8721pbf.pdf?ci_sign=4d7ba651820880c0d9f9856e81437904f3f7d3b6
IRF8721TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2.5W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGX50AE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EB833A719C42469&compId=BGX50AE6327.pdf?ci_sign=31c8574b03909b1c4b15ea8d7da7173be948042b
BGX50AE6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.14A; SOT143; 210mW; reel,tape
Max. off-state voltage: 50V
Load current: 0.14A
Case: SOT143
Semiconductor structure: bridge rectifier
Features of semiconductor devices: fast switching
Mounting: SMD
Power dissipation: 0.21W
Kind of package: reel; tape
Type of diode: switching
auf Bestellung 1086 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
414+0.17 EUR
468+0.15 EUR
603+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 414
Im Einkaufswagen  Stück im Wert von  UAH
IDH02G120C5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB83CA5339CAFA8&compId=IDH02G120C5-DTE.pdf?ci_sign=c0376ff0f508097055bda59dd691f57aee3224bb
IDH02G120C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; PG-TO220-2; 75W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Max. forward voltage: 1.4V
Max. forward impulse current: 37A
Leakage current: 1.2µA
Power dissipation: 75W
Technology: CoolSiC™ 5G; SiC
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.55 EUR
35+2.10 EUR
36+1.99 EUR
250+1.96 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IMZA65R048M1HXKSA1 Infineon-IMZA65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d9ac090535
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMZA65R072M1HXKSA1 Infineon-IMZA65R072M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85e97cf305b9
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 69A
Power dissipation: 96W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TT251N12KOFHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE787EB8C9E469&compId=TT251N18KOF.pdf?ci_sign=3a12e8551cff06ea6af1b7da4fcd294bd77f4081
TT251N12KOFHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 251A; BG-PB50-1; screw
Case: BG-PB50-1
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 251A
Semiconductor structure: double series
Gate current: 300mA
Max. forward impulse current: 9.1kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP041N12N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC7293DEAA811C&compId=IPP041N12N3G-DTE.pdf?ci_sign=1cc97405361528b7e9c295ad1d3fccf8117bba59
IPP041N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI041N12N3GAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC21DBFD4B011C&compId=IPI041N12N3G-DTE.pdf?ci_sign=25bd54334b52dd5ae3f6d525c0226e6d776aae3e
IPI041N12N3GAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Case: PG-TO262-3
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 249 498 747 996 1245 1494 1743 1992 2241 2488 2489 2490 2491 2492 2493 2494 2495  [ Nächste Seite >> ]