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IPG20N04S408ATMA1 IPG20N04S408ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA57AA149F9E143&compId=IPG20N04S408.pdf?ci_sign=8fef4a4a90eb99a19b047330a14f6402e403fdee Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 65W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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IPG20N04S409ATMA1 IPG20N04S409ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA57E4A02E10143&compId=IPG20N04S409.pdf?ci_sign=c4432906d78c25f5effc1e82352607614ab5fbf0 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 54W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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IPG20N04S4L11ATMA1 INFINEON TECHNOLOGIES Infineon-IPG20N04S4L_11-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf644b016c14 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 41W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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IR2114SSPBF IR2114SSPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA33D55348713D7&compId=IR2114SSPBF.pdf?ci_sign=76268fd6f1521786ea6d8559b91e974700f61597 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SSOP24
Output current: -1.5...1A
Mounting: SMD
Turn-on time: 440ns
Turn-off time: 440ns
Number of channels: 2
Topology: IGBT half-bridge
Operating temperature: -40...125°C
Voltage class: 0.6/1.2kV
Power: 1.5W
Supply voltage: 10.4...20V DC
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.36 EUR
8+8.94 EUR
Mindestbestellmenge: 6
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BF888H6327XTSA1 BF888H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE994C0AE7B1158B8BF&compId=BF888.pdf?ci_sign=e176ed99bf95efd6d11d387df59bb310696c35af Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4V; 30mA; 0.16W; SOT343
Mounting: SMD
Case: SOT343
Frequency: 47GHz
Collector-emitter voltage: 4V
Current gain: 250
Collector current: 30mA
Type of transistor: NPN
Power dissipation: 0.16W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
auf Bestellung 2515 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
Mindestbestellmenge: 500
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IRS21531DSTRPBF IRS21531DSTRPBF INFINEON TECHNOLOGIES IRSDS08244-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Operating temperature: -40...125°C
Case: SO8
Power: 625mW
Supply voltage: 10.1...16.8V DC
Turn-on time: 0.12µs
Turn-off time: 50ns
Output current: -260...180mA
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
auf Bestellung 2270 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.4 EUR
57+1.26 EUR
75+0.96 EUR
79+0.92 EUR
Mindestbestellmenge: 52
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IRFS7530TRLPBF IRFS7530TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A677F07BCF01EC&compId=irfs7530pbf.pdf?ci_sign=85e71ad5005e668b68064aa3ea1b9a48fa5ebf67 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Trade name: StrongIRFET
On-state resistance: 2mΩ
Gate charge: 274nC
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPB017N08N5ATMA1 IPB017N08N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA73AB08EF811C&compId=IPB017N08N5-DTE.pdf?ci_sign=7307f2b75785faf784f6ce903b0ce2fffffbbf9a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BCR400WH6327XTSA1 BCR400WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998A2EDFC26DD3820&compId=BCR400W.pdf?ci_sign=006cd1b97ef4c09c4e711c708b77bf78b65f7373 Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller
Kind of package: reel; tape
Type of integrated circuit: driver
Integrated circuit features: active bias controller
Mounting: SMD
Case: SOT343
Power: 0.33W
Supply voltage: 1.6...18V DC
auf Bestellung 2877 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
302+0.24 EUR
353+0.2 EUR
428+0.17 EUR
550+0.13 EUR
582+0.12 EUR
Mindestbestellmenge: 209
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IPP034NE7N3GXKSA1 IPP034NE7N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E95E936085211C&compId=IPP034NE7N3G-DTE.pdf?ci_sign=8d0e6de0bd6b07ddb826b41cbddb3eb2f3531bd6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.86 EUR
22+3.4 EUR
24+2.97 EUR
Mindestbestellmenge: 19
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BSS606NH6327XTSA1 BSS606NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A820D4E7D1F10B&compId=BSS606NH6327XTSA1.pdf?ci_sign=d3e7cbc8506ee2b389230eb6c41319a56a0d32e7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Drain-source voltage: 60V
Drain current: 3.2A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT89
auf Bestellung 945 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
157+0.46 EUR
191+0.37 EUR
319+0.22 EUR
338+0.21 EUR
Mindestbestellmenge: 107
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IPB017N10N5ATMA1 IPB017N10N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA789EA0C3611C&compId=IPB017N10N5-DTE.pdf?ci_sign=0831c35b1695eacb56b73ab26680094032011dbd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IRLS3036TRL7PP IRLS3036TRL7PP INFINEON TECHNOLOGIES irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Mounting: SMD
Drain-source voltage: 60V
Drain current: 210A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 380W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 1kA
Case: D2PAK-7
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.33 EUR
19+3.9 EUR
23+3.13 EUR
25+2.96 EUR
Mindestbestellmenge: 17
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1EDF5673FXUMA1 1EDF5673FXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD35D15A916F8BF&compId=1EDF5673F_1EDF5663H.pdf?ci_sign=78bf5f71fdff35205d0ff7cff4e413d561b7228b Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Type of integrated circuit: driver
Case: PG-DSO-16
Mounting: SMD
Supply voltage: 3...3.5V; 6.5...20V
Output current: -8...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™; GaN
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 650V
Produkt ist nicht verfügbar
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1EDI20N12AFXUMA1 1EDI20N12AFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD3DFF0212378BF&compId=1EDI20N12AF.pdf?ci_sign=35d6f21bfdc47584f0a10023f30c07b34fe60273 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™; GaN
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Produkt ist nicht verfügbar
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IGOT60R070D1AUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBE401B81A658BF&compId=IGOT60R070D1.pdf?ci_sign=83f481bff1714d6c3a176ec2ae803d094c7fa622 Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tape
Gate charge: 5.8nC
Technology: CoolGaN™
Kind of transistor: HEMT
Kind of channel: enhancement
Pulsed drain current: 60A
Gate-source voltage: -10V
Mounting: SMD
Case: PG-DSO-20
Gate current: 20mA
Drain-source voltage: 600V
Drain current: 31A
On-state resistance: 70mΩ
Produkt ist nicht verfügbar
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IGT60R070D1ATMA1 IGT60R070D1ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBE420228EDB8BF&compId=IGT60R070D1.pdf?ci_sign=7e4b352780f0dc62839476384facd6fe5b07cb26 Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 125W
Gate current: 20mA
Produkt ist nicht verfügbar
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IRFH7110TRPBF IRFH7110TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCB9C6F703D5EA&compId=IRFH7110TRPBF.pdf?ci_sign=c66b2d50f8a627ad6e7e7a642b848a73f86c80c4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Mounting: SMD
Case: PQFN5X6
Power dissipation: 3.6W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Drain current: 11A
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Produkt ist nicht verfügbar
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IRFTS9342TRPBF IRFTS9342TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C996E431F6F1A303005056AB0C4F&compId=irfts9342pbf.pdf?ci_sign=b172a9595ca6a4474e9b0d2efc95b751114ea742 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -5.8A
auf Bestellung 2487 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
143+0.5 EUR
184+0.39 EUR
230+0.31 EUR
424+0.17 EUR
447+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 105
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IRFTS8342TRPBF IRFTS8342TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C975B7ABC1F1A303005056AB0C4F&compId=irfts8342pbf.pdf?ci_sign=db0a5119cd5ea81bef66eb4bdb6eb86b3179e7bd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 30V
Drain current: 8.2A
auf Bestellung 3342 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
180+0.4 EUR
360+0.2 EUR
382+0.19 EUR
3000+0.18 EUR
Mindestbestellmenge: 129
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IPB017N06N3GATMA1 IPB017N06N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5D047724C211C&compId=IPB017N06N3G-DTE.pdf?ci_sign=208230effbcefd907be045691ad144c03c166baf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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2EDS8165HXUMA1 2EDS8165HXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD778C66A1EF8BF&compId=2EDF7xx5F_K_H.pdf?ci_sign=536288a0a3fc9780e6ac8a2f60f1f7e7d612e974 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Case: PG-DSO-16
Supply voltage: 3...3.5V; 4.5...20V
Output current: -2...1A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Produkt ist nicht verfügbar
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IPB180N06S4H1ATMA2 INFINEON TECHNOLOGIES Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 250W
Case: PG-TO263-7-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Produkt ist nicht verfügbar
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IRLTS2242TRPBF IRLTS2242TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222822B4201F0F1A303005056AB0C4F&compId=irlts2242pbf.pdf?ci_sign=67037f13a19603e6ce309fb4330f48931a8be6de Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -20V
Drain current: -6.9A
auf Bestellung 2766 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
175+0.41 EUR
252+0.28 EUR
300+0.24 EUR
486+0.15 EUR
516+0.14 EUR
Mindestbestellmenge: 139
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BCP55H6327XTSA1 BCP55H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5B74C701E2469&compId=BCP55H6327XTSA1.pdf?ci_sign=08291b14ff29a8fbd77d5ad5acff855eac2f8138 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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FF300R12KT4HOSA1 FF300R12KT4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD80D064564259&compId=FF300R12KT4.pdf?ci_sign=3b3b4ec7904ace87e4bb423a0f8f1a4cd884a9ab Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 1.6kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Produkt ist nicht verfügbar
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IR2010PBF IR2010PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA93E4F97CE2DB20C4&compId=IR2010SPBF.pdf?ci_sign=7f2358c95a7abe46aba0e75f703e0870e922928f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -3...3A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Power: 1.6W
Voltage class: 200V
Turn-off time: 65ns
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Turn-on time: 95ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.49 EUR
11+6.75 EUR
14+5.18 EUR
15+4.89 EUR
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XMC4502F100K768ACXQMA1 XMC4502F100K768ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 55
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 160kB SRAM; 768kB FLASH
Operating temperature: -40...125°C
Case: PG-LQFP-100
Produkt ist nicht verfügbar
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IRS21844STRPBF INFINEON TECHNOLOGIES irs2184.pdf?fileId=5546d462533600a401535676d8da27db Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
auf Bestellung 2482 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.06 EUR
41+1.77 EUR
43+1.67 EUR
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BCX55H6327XTSA1 BCX55H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C523F7A9BD2469&compId=BCX55.pdf?ci_sign=a3bb4ae1588b66242c2cb0348fbd0c37989e1df4 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
auf Bestellung 38 Stücke:
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38+1.89 EUR
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XC822MT1FRIAAFXUMA1 XC822MT1FRIAAFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6999469085E28&compId=XC82X-DTE.pdf?ci_sign=f0d60d0b9823b4826cf85a0833af492801959a8a Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
auf Bestellung 372 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.47 EUR
52+1.4 EUR
69+1.04 EUR
73+0.99 EUR
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IRFH5110TRPBF IRFH5110TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B5CDDD6CADF1A303005056AB0C4F&compId=irfh5110pbf.pdf?ci_sign=b0431d386322e9a787eacbded2ffc698b5b0504f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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TLE4268GXUMA2 TLE4268GXUMA2 INFINEON TECHNOLOGIES TLE4268G.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.15A
Case: PG-DSO-20
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...45V
auf Bestellung 344 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.8 EUR
44+1.63 EUR
61+1.19 EUR
65+1.12 EUR
Mindestbestellmenge: 40
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IPG20N10S4L35ATMA1 INFINEON TECHNOLOGIES Infineon-IPG20N10S4L_35-DS-v01_01-en.pdf?fileId=db3a3043372d5cc8013750d7337e05fd Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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IPP60R099P6XKSA1 IPP60R099P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A391E6B471BF&compId=IPP60R099P6-DTE.pdf?ci_sign=6378e662d8a8fbcb13cbf52bee33edeeb3c53f18 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIR3241STR AUIR3241STR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFCCE9664BFD3D1&compId=AUIR3241STR.pdf?ci_sign=ab8f41b566193fceae01564ad4999679f389eec2 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 625mW; Ch: 1; 40V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Supply voltage: 3...36V DC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: reel; tape
Voltage class: 40V
Power: 625mW
Produkt ist nicht verfügbar
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IRLHS6276TRPBF IRLHS6276TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22277C3379CC2F1A303005056AB0C4F&compId=irlhs6276pbf.pdf?ci_sign=208aca56a5000cd5159155d6e3fbbc58f9c0642b Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Case: PQFN2X2
Drain-source voltage: 20V
Drain current: 12A
Type of transistor: N-MOSFET x2
Power dissipation: 4.5W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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ITS4142N ITS4142N INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6E1AB61DB55EA&compId=ITS4142N.pdf?ci_sign=21c702092ba3ee18972d7cdcbb85086b44fd23a3 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Operating temperature: -30...85°C
Case: SOT223
Supply voltage: 12...45V DC
On-state resistance: 0.2Ω
Turn-on time: 150µs
Turn-off time: 0.1ms
Output current: 0.7A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 1.4W
Kind of package: reel; tape
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Mounting: SMD
auf Bestellung 3313 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.68 EUR
30+2.4 EUR
49+1.49 EUR
51+1.42 EUR
1000+1.4 EUR
2000+1.36 EUR
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SMBTA92E6327HTSA1 SMBTA92E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586993CFFCDBBC469&compId=SMBTA92E6327.pdf?ci_sign=5614a697b45f81fbd66dbe57ff189c5f61165336 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 50MHz
auf Bestellung 1299 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
219+0.33 EUR
365+0.2 EUR
848+0.084 EUR
910+0.079 EUR
Mindestbestellmenge: 179
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IRF7451PBF IRF7451PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A35F9093DFF1A303005056AB0C4F&compId=irf7451pbf.pdf?ci_sign=fe45e379b1aa1eedfed7f9b25048f3b66534b97a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Drain-source voltage: 150V
Drain current: 3.6A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
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IRF7451TRPBF IRF7451TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A35F9093DFF1A303005056AB0C4F&compId=irf7451pbf.pdf?ci_sign=fe45e379b1aa1eedfed7f9b25048f3b66534b97a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Drain-source voltage: 150V
Drain current: 3.6A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
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IRF250P224 IRF250P224 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5D7D7C8750A18&compId=IRF250P224.pdf?ci_sign=b596cfd627d254660d4e86550909ac67ff33c44d Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 203nC
Technology: StrongIRFET™
Kind of package: tube
Produkt ist nicht verfügbar
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IPP60R190P6XKSA1 IPP60R190P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59496F43BA9B1BF&compId=IPP60R190P6-DTE.pdf?ci_sign=6ca2ab1861703fa95cc299fbb9cf787049410a12 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Case: PG-TO220-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ P6
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 82 Stücke:
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23+3.16 EUR
33+2.2 EUR
35+2.07 EUR
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IPP60R199CPXKSA1 IPP60R199CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59453B6F1F651BF&compId=IPP60R199CP-DTE.pdf?ci_sign=92d70687cb740539bf38418ae0fd651c7a6f0e05 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 25 Stücke:
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16+4.75 EUR
23+3.16 EUR
24+2.99 EUR
Mindestbestellmenge: 16
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IPA60R120P7 IPA60R120P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E184A487B3A749&compId=IPA60R120P7.pdf?ci_sign=2a32c7f9e43909d9c30658870980b04c399f73e2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP023N10N5AKSA1 IPP023N10N5AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAFB2551DBC11C&compId=IPP023N10N5-DTE.pdf?ci_sign=8e7b10dc9b3c7552849246161f420235e75e450c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCX42E6327 BCX42E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B4125EE4672469&compId=BCX42E6327.pdf?ci_sign=67fb8351dd49719a9bb2a0e2e784490f512ddf69 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
auf Bestellung 1583 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
302+0.24 EUR
391+0.18 EUR
439+0.16 EUR
633+0.11 EUR
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BCR505E6327 BCR505E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C56A5B28972469&compId=BCR505.pdf?ci_sign=5e69ad6db06b9b14afe597363046ce48384c5007 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 2917 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
439+0.16 EUR
671+0.11 EUR
973+0.074 EUR
1029+0.069 EUR
Mindestbestellmenge: 313
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BCR503E6327HTSA1 BCR503E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C56C2C8D2EC469&compId=BCR503.pdf?ci_sign=9fd95cda543b3b14d33c4843aec4d29fbb1d0b45 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
auf Bestellung 7593 Stücke:
Lieferzeit 14-21 Tag (e)
150+0.48 EUR
233+0.31 EUR
321+0.22 EUR
391+0.18 EUR
459+0.16 EUR
878+0.082 EUR
944+0.076 EUR
Mindestbestellmenge: 150
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BTS5012SDA BTS5012SDA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986584F5DB6469&compId=BTS5012SDA.pdf?ci_sign=4c533c0b61246aa343a29fc2c537766b23bce121 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 12mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
auf Bestellung 1017 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.8 EUR
30+2.4 EUR
33+2.17 EUR
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FD300R12KE3HOSA1 FD300R12KE3HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CDFE1588717B3D7&compId=FD300R12KE3.pdf?ci_sign=4f9165ddb8c39d579e888c281879100e2a537fa6 Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Application: Inverter
Power dissipation: 1.47kW
Topology: boost chopper
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Produkt ist nicht verfügbar
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IPW60R190C6FKSA1 IPW60R190C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594DAE69A9FB1BF&compId=IPW60R190C6-DTE.pdf?ci_sign=aa3804d3e7bddb28ab47507aa621ef2f4dd6706c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.06 EUR
20+3.59 EUR
24+3.1 EUR
25+2.95 EUR
120+2.89 EUR
Mindestbestellmenge: 18
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BSB013NE2LXIXUMA1 BSB013NE2LXIXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C1FC2A5FA9011C&compId=BSB013NE2LXI-DTE.pdf?ci_sign=aba356e0bd6bc82ad911453ce9c6ebac3f41cad2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Case: CanPAK™ MX; MG-WDSON-2
Drain-source voltage: 25V
Drain current: 103A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
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S25FL064LABMFB013 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Case: SOIC8
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 108MHz
Kind of interface: serial
Memory: 64Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S25FL128LAGMFB013 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Case: SOIC8
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S25FL128SAGMFB013 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S25FL256SAGMFB013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S25FL512SAGMFB013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 512Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S25FL512SDSMFB013 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 80MHz
Kind of interface: serial
Memory: 512Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S25FS512SAGMFB013 INFINEON TECHNOLOGIES Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 1.7...2V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 512Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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IPG20N04S408ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA57AA149F9E143&compId=IPG20N04S408.pdf?ci_sign=8fef4a4a90eb99a19b047330a14f6402e403fdee
IPG20N04S408ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 65W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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IPG20N04S409ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA57E4A02E10143&compId=IPG20N04S409.pdf?ci_sign=c4432906d78c25f5effc1e82352607614ab5fbf0
IPG20N04S409ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 54W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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IPG20N04S4L11ATMA1 Infineon-IPG20N04S4L_11-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf644b016c14
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 41W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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IR2114SSPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA33D55348713D7&compId=IR2114SSPBF.pdf?ci_sign=76268fd6f1521786ea6d8559b91e974700f61597
IR2114SSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SSOP24
Output current: -1.5...1A
Mounting: SMD
Turn-on time: 440ns
Turn-off time: 440ns
Number of channels: 2
Topology: IGBT half-bridge
Operating temperature: -40...125°C
Voltage class: 0.6/1.2kV
Power: 1.5W
Supply voltage: 10.4...20V DC
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.36 EUR
8+8.94 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BF888H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE994C0AE7B1158B8BF&compId=BF888.pdf?ci_sign=e176ed99bf95efd6d11d387df59bb310696c35af
BF888H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4V; 30mA; 0.16W; SOT343
Mounting: SMD
Case: SOT343
Frequency: 47GHz
Collector-emitter voltage: 4V
Current gain: 250
Collector current: 30mA
Type of transistor: NPN
Power dissipation: 0.16W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
auf Bestellung 2515 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
Mindestbestellmenge: 500
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IRS21531DSTRPBF IRSDS08244-1.pdf?t.download=true&u=5oefqw
IRS21531DSTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Operating temperature: -40...125°C
Case: SO8
Power: 625mW
Supply voltage: 10.1...16.8V DC
Turn-on time: 0.12µs
Turn-off time: 50ns
Output current: -260...180mA
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
auf Bestellung 2270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
57+1.26 EUR
75+0.96 EUR
79+0.92 EUR
Mindestbestellmenge: 52
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IRFS7530TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A677F07BCF01EC&compId=irfs7530pbf.pdf?ci_sign=85e71ad5005e668b68064aa3ea1b9a48fa5ebf67
IRFS7530TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Trade name: StrongIRFET
On-state resistance: 2mΩ
Gate charge: 274nC
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPB017N08N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA73AB08EF811C&compId=IPB017N08N5-DTE.pdf?ci_sign=7307f2b75785faf784f6ce903b0ce2fffffbbf9a
IPB017N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR400WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998A2EDFC26DD3820&compId=BCR400W.pdf?ci_sign=006cd1b97ef4c09c4e711c708b77bf78b65f7373
BCR400WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller
Kind of package: reel; tape
Type of integrated circuit: driver
Integrated circuit features: active bias controller
Mounting: SMD
Case: SOT343
Power: 0.33W
Supply voltage: 1.6...18V DC
auf Bestellung 2877 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
302+0.24 EUR
353+0.2 EUR
428+0.17 EUR
550+0.13 EUR
582+0.12 EUR
Mindestbestellmenge: 209
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IPP034NE7N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E95E936085211C&compId=IPP034NE7N3G-DTE.pdf?ci_sign=8d0e6de0bd6b07ddb826b41cbddb3eb2f3531bd6
IPP034NE7N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.86 EUR
22+3.4 EUR
24+2.97 EUR
Mindestbestellmenge: 19
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BSS606NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A820D4E7D1F10B&compId=BSS606NH6327XTSA1.pdf?ci_sign=d3e7cbc8506ee2b389230eb6c41319a56a0d32e7
BSS606NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Drain-source voltage: 60V
Drain current: 3.2A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT89
auf Bestellung 945 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
157+0.46 EUR
191+0.37 EUR
319+0.22 EUR
338+0.21 EUR
Mindestbestellmenge: 107
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IPB017N10N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA789EA0C3611C&compId=IPB017N10N5-DTE.pdf?ci_sign=0831c35b1695eacb56b73ab26680094032011dbd
IPB017N10N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IRLS3036TRL7PP irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b
IRLS3036TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Mounting: SMD
Drain-source voltage: 60V
Drain current: 210A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 380W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 1kA
Case: D2PAK-7
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.33 EUR
19+3.9 EUR
23+3.13 EUR
25+2.96 EUR
Mindestbestellmenge: 17
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1EDF5673FXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD35D15A916F8BF&compId=1EDF5673F_1EDF5663H.pdf?ci_sign=78bf5f71fdff35205d0ff7cff4e413d561b7228b
1EDF5673FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Type of integrated circuit: driver
Case: PG-DSO-16
Mounting: SMD
Supply voltage: 3...3.5V; 6.5...20V
Output current: -8...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™; GaN
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 650V
Produkt ist nicht verfügbar
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1EDI20N12AFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD3DFF0212378BF&compId=1EDI20N12AF.pdf?ci_sign=35d6f21bfdc47584f0a10023f30c07b34fe60273
1EDI20N12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™; GaN
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Produkt ist nicht verfügbar
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IGOT60R070D1AUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBE401B81A658BF&compId=IGOT60R070D1.pdf?ci_sign=83f481bff1714d6c3a176ec2ae803d094c7fa622
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tape
Gate charge: 5.8nC
Technology: CoolGaN™
Kind of transistor: HEMT
Kind of channel: enhancement
Pulsed drain current: 60A
Gate-source voltage: -10V
Mounting: SMD
Case: PG-DSO-20
Gate current: 20mA
Drain-source voltage: 600V
Drain current: 31A
On-state resistance: 70mΩ
Produkt ist nicht verfügbar
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IGT60R070D1ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBE420228EDB8BF&compId=IGT60R070D1.pdf?ci_sign=7e4b352780f0dc62839476384facd6fe5b07cb26
IGT60R070D1ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 125W
Gate current: 20mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH7110TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCB9C6F703D5EA&compId=IRFH7110TRPBF.pdf?ci_sign=c66b2d50f8a627ad6e7e7a642b848a73f86c80c4
IRFH7110TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Mounting: SMD
Case: PQFN5X6
Power dissipation: 3.6W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Drain current: 11A
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFTS9342TRPBF pVersion=0046&contRep=ZT&docId=E221C996E431F6F1A303005056AB0C4F&compId=irfts9342pbf.pdf?ci_sign=b172a9595ca6a4474e9b0d2efc95b751114ea742
IRFTS9342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -5.8A
auf Bestellung 2487 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
143+0.5 EUR
184+0.39 EUR
230+0.31 EUR
424+0.17 EUR
447+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
IRFTS8342TRPBF pVersion=0046&contRep=ZT&docId=E221C975B7ABC1F1A303005056AB0C4F&compId=irfts8342pbf.pdf?ci_sign=db0a5119cd5ea81bef66eb4bdb6eb86b3179e7bd
IRFTS8342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 30V
Drain current: 8.2A
auf Bestellung 3342 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
180+0.4 EUR
360+0.2 EUR
382+0.19 EUR
3000+0.18 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
IPB017N06N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5D047724C211C&compId=IPB017N06N3G-DTE.pdf?ci_sign=208230effbcefd907be045691ad144c03c166baf
IPB017N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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2EDS8165HXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD778C66A1EF8BF&compId=2EDF7xx5F_K_H.pdf?ci_sign=536288a0a3fc9780e6ac8a2f60f1f7e7d612e974
2EDS8165HXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Case: PG-DSO-16
Supply voltage: 3...3.5V; 4.5...20V
Output current: -2...1A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Produkt ist nicht verfügbar
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IPB180N06S4H1ATMA2 Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 250W
Case: PG-TO263-7-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Produkt ist nicht verfügbar
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IRLTS2242TRPBF pVersion=0046&contRep=ZT&docId=E222822B4201F0F1A303005056AB0C4F&compId=irlts2242pbf.pdf?ci_sign=67037f13a19603e6ce309fb4330f48931a8be6de
IRLTS2242TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -20V
Drain current: -6.9A
auf Bestellung 2766 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
175+0.41 EUR
252+0.28 EUR
300+0.24 EUR
486+0.15 EUR
516+0.14 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
BCP55H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5B74C701E2469&compId=BCP55H6327XTSA1.pdf?ci_sign=08291b14ff29a8fbd77d5ad5acff855eac2f8138
BCP55H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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FF300R12KT4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD80D064564259&compId=FF300R12KT4.pdf?ci_sign=3b3b4ec7904ace87e4bb423a0f8f1a4cd884a9ab
FF300R12KT4HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Power dissipation: 1.6kW
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Produkt ist nicht verfügbar
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IR2010PBF pVersion=0046&contRep=ZT&docId=005056AB90B41EDA93E4F97CE2DB20C4&compId=IR2010SPBF.pdf?ci_sign=7f2358c95a7abe46aba0e75f703e0870e922928f
IR2010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -3...3A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Power: 1.6W
Voltage class: 200V
Turn-off time: 65ns
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Turn-on time: 95ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.49 EUR
11+6.75 EUR
14+5.18 EUR
15+4.89 EUR
Mindestbestellmenge: 10
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XMC4502F100K768ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4502F100K768ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 55
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 160kB SRAM; 768kB FLASH
Operating temperature: -40...125°C
Case: PG-LQFP-100
Produkt ist nicht verfügbar
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IRS21844STRPBF irs2184.pdf?fileId=5546d462533600a401535676d8da27db
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
auf Bestellung 2482 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.06 EUR
41+1.77 EUR
43+1.67 EUR
Mindestbestellmenge: 24
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BCX55H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C523F7A9BD2469&compId=BCX55.pdf?ci_sign=a3bb4ae1588b66242c2cb0348fbd0c37989e1df4
BCX55H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
Mindestbestellmenge: 38
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XC822MT1FRIAAFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6999469085E28&compId=XC82X-DTE.pdf?ci_sign=f0d60d0b9823b4826cf85a0833af492801959a8a
XC822MT1FRIAAFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
auf Bestellung 372 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
52+1.4 EUR
69+1.04 EUR
73+0.99 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5110TRPBF pVersion=0046&contRep=ZT&docId=E221B5CDDD6CADF1A303005056AB0C4F&compId=irfh5110pbf.pdf?ci_sign=b0431d386322e9a787eacbded2ffc698b5b0504f
IRFH5110TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE4268GXUMA2 TLE4268G.pdf
TLE4268GXUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.15A
Case: PG-DSO-20
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...45V
auf Bestellung 344 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.8 EUR
44+1.63 EUR
61+1.19 EUR
65+1.12 EUR
Mindestbestellmenge: 40
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IPG20N10S4L35ATMA1 Infineon-IPG20N10S4L_35-DS-v01_01-en.pdf?fileId=db3a3043372d5cc8013750d7337e05fd
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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IPP60R099P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A391E6B471BF&compId=IPP60R099P6-DTE.pdf?ci_sign=6378e662d8a8fbcb13cbf52bee33edeeb3c53f18
IPP60R099P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIR3241STR pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFCCE9664BFD3D1&compId=AUIR3241STR.pdf?ci_sign=ab8f41b566193fceae01564ad4999679f389eec2
AUIR3241STR
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 625mW; Ch: 1; 40V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Supply voltage: 3...36V DC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: reel; tape
Voltage class: 40V
Power: 625mW
Produkt ist nicht verfügbar
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IRLHS6276TRPBF pVersion=0046&contRep=ZT&docId=E22277C3379CC2F1A303005056AB0C4F&compId=irlhs6276pbf.pdf?ci_sign=208aca56a5000cd5159155d6e3fbbc58f9c0642b
IRLHS6276TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Case: PQFN2X2
Drain-source voltage: 20V
Drain current: 12A
Type of transistor: N-MOSFET x2
Power dissipation: 4.5W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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ITS4142N pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6E1AB61DB55EA&compId=ITS4142N.pdf?ci_sign=21c702092ba3ee18972d7cdcbb85086b44fd23a3
ITS4142N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Operating temperature: -30...85°C
Case: SOT223
Supply voltage: 12...45V DC
On-state resistance: 0.2Ω
Turn-on time: 150µs
Turn-off time: 0.1ms
Output current: 0.7A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 1.4W
Kind of package: reel; tape
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Mounting: SMD
auf Bestellung 3313 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.68 EUR
30+2.4 EUR
49+1.49 EUR
51+1.42 EUR
1000+1.4 EUR
2000+1.36 EUR
Mindestbestellmenge: 20
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SMBTA92E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586993CFFCDBBC469&compId=SMBTA92E6327.pdf?ci_sign=5614a697b45f81fbd66dbe57ff189c5f61165336
SMBTA92E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 50MHz
auf Bestellung 1299 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
219+0.33 EUR
365+0.2 EUR
848+0.084 EUR
910+0.079 EUR
Mindestbestellmenge: 179
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IRF7451PBF pVersion=0046&contRep=ZT&docId=E221A35F9093DFF1A303005056AB0C4F&compId=irf7451pbf.pdf?ci_sign=fe45e379b1aa1eedfed7f9b25048f3b66534b97a
IRF7451PBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Drain-source voltage: 150V
Drain current: 3.6A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7451TRPBF pVersion=0046&contRep=ZT&docId=E221A35F9093DFF1A303005056AB0C4F&compId=irf7451pbf.pdf?ci_sign=fe45e379b1aa1eedfed7f9b25048f3b66534b97a
IRF7451TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Drain-source voltage: 150V
Drain current: 3.6A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
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IRF250P224 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5D7D7C8750A18&compId=IRF250P224.pdf?ci_sign=b596cfd627d254660d4e86550909ac67ff33c44d
IRF250P224
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 203nC
Technology: StrongIRFET™
Kind of package: tube
Produkt ist nicht verfügbar
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IPP60R190P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59496F43BA9B1BF&compId=IPP60R190P6-DTE.pdf?ci_sign=6ca2ab1861703fa95cc299fbb9cf787049410a12
IPP60R190P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Case: PG-TO220-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ P6
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.16 EUR
33+2.2 EUR
35+2.07 EUR
Mindestbestellmenge: 23
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IPP60R199CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59453B6F1F651BF&compId=IPP60R199CP-DTE.pdf?ci_sign=92d70687cb740539bf38418ae0fd651c7a6f0e05
IPP60R199CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.75 EUR
23+3.16 EUR
24+2.99 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R120P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E184A487B3A749&compId=IPA60R120P7.pdf?ci_sign=2a32c7f9e43909d9c30658870980b04c399f73e2
IPA60R120P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP023N10N5AKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAFB2551DBC11C&compId=IPP023N10N5-DTE.pdf?ci_sign=8e7b10dc9b3c7552849246161f420235e75e450c
IPP023N10N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCX42E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B4125EE4672469&compId=BCX42E6327.pdf?ci_sign=67fb8351dd49719a9bb2a0e2e784490f512ddf69
BCX42E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
auf Bestellung 1583 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
302+0.24 EUR
391+0.18 EUR
439+0.16 EUR
633+0.11 EUR
Mindestbestellmenge: 239
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BCR505E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C56A5B28972469&compId=BCR505.pdf?ci_sign=5e69ad6db06b9b14afe597363046ce48384c5007
BCR505E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 2917 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
439+0.16 EUR
671+0.11 EUR
973+0.074 EUR
1029+0.069 EUR
Mindestbestellmenge: 313
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BCR503E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C56C2C8D2EC469&compId=BCR503.pdf?ci_sign=9fd95cda543b3b14d33c4843aec4d29fbb1d0b45
BCR503E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
auf Bestellung 7593 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
150+0.48 EUR
233+0.31 EUR
321+0.22 EUR
391+0.18 EUR
459+0.16 EUR
878+0.082 EUR
944+0.076 EUR
Mindestbestellmenge: 150
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BTS5012SDA pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986584F5DB6469&compId=BTS5012SDA.pdf?ci_sign=4c533c0b61246aa343a29fc2c537766b23bce121
BTS5012SDA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 12mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
auf Bestellung 1017 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.8 EUR
30+2.4 EUR
33+2.17 EUR
Mindestbestellmenge: 26
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FD300R12KE3HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CDFE1588717B3D7&compId=FD300R12KE3.pdf?ci_sign=4f9165ddb8c39d579e888c281879100e2a537fa6
FD300R12KE3HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Application: Inverter
Power dissipation: 1.47kW
Topology: boost chopper
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Produkt ist nicht verfügbar
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IPW60R190C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594DAE69A9FB1BF&compId=IPW60R190C6-DTE.pdf?ci_sign=aa3804d3e7bddb28ab47507aa621ef2f4dd6706c
IPW60R190C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.06 EUR
20+3.59 EUR
24+3.1 EUR
25+2.95 EUR
120+2.89 EUR
Mindestbestellmenge: 18
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BSB013NE2LXIXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C1FC2A5FA9011C&compId=BSB013NE2LXI-DTE.pdf?ci_sign=aba356e0bd6bc82ad911453ce9c6ebac3f41cad2
BSB013NE2LXIXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Case: CanPAK™ MX; MG-WDSON-2
Drain-source voltage: 25V
Drain current: 103A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
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S25FL064LABMFB013 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Case: SOIC8
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 108MHz
Kind of interface: serial
Memory: 64Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S25FL128LAGMFB013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Case: SOIC8
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S25FL128SAGMFB013 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S25FL256SAGMFB013
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S25FL512SAGMFB013
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 512Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S25FL512SDSMFB013 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 80MHz
Kind of interface: serial
Memory: 512Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S25FS512SAGMFB013 Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 1.7...2V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 512Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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