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IAUC60N10S5L110ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N10S5L110-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b9370c4677 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 88W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUS260N10S5N019TATMA1 INFINEON TECHNOLOGIES Infineon-IAUS260N10S5N019T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e04616a61b8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 91A
Pulsed drain current: 995A
Power dissipation: 300W
Case: PG-HDSOP-16
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 166nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPD60N10S412ATMA1 INFINEON TECHNOLOGIES fundamentals-of-power-semiconductors Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 60A; 94W; DPAK; automotive industry
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 94W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
Application: automotive industry
auf Bestellung 2500 Stücke:
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2500+0.81 EUR
Mindestbestellmenge: 2500
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IPB020N10N5ATMA1 IPB020N10N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA87948325611C&compId=IPB020N10N5-dte.pdf?ci_sign=0e271e4747a3359c20c2048905fcf7fe0c97f30a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB020N10N5LF IPB020N10N5LF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2F8657C14D10749&compId=IPB020N10N5LF.pdf?ci_sign=d2dde93c8ab6b6de09ca42907929750b1d27bba8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB100N10S305ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I100N10S3-DS-v01_00-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908bd4d8595c&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 100A; Idm: 400A
Technology: OptiMOS® -T
Case: PG-TO263-3-2
Type of transistor: N-MOSFET
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 4.8mΩ
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 100V
Power dissipation: 300W
Pulsed drain current: 400A
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IAUC100N10S5L040ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N10S5L040-DS-v01_00-EN.pdf?fileId=5546d462694c98b401696d0485683542 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 168W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 168W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUC100N10S5L054ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N10S5L054-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd429850211 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 400A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 400A
Power dissipation: 130W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUC100N10S5N040ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N10S5N040-DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164b70f994060e8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BFR193FH6327XTSA1 INFINEON TECHNOLOGIES bfr193f.pdf?folderId=db3a30431400ef68011425b2dfaf05c6&fileId=db3a30431441fb5d0114acfcde76152c Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 80mA; 580mW; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT723
Current gain: 70
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
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3000+0.12 EUR
Mindestbestellmenge: 3000
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BSC040N08NS5ATMA1 BSC040N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E5BB2ADA011C&compId=BSC040N08NS5-DTE.pdf?ci_sign=b51bf54e85ec6f47698e8c2b8ec68aa60b2aa641 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUC40N08S5L140ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC40N08S5L140-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b920be4674 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 28A; Idm: 160A; 56W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 56W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 18.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUS240N08S5N019ATMA1 INFINEON TECHNOLOGIES IAUS240N08S5N019.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 173A; Idm: 960A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 173A
Pulsed drain current: 960A
Power dissipation: 230W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB040N08NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB040N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc00361b15 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 80V; 107A; 150W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 80V
Drain current: 107A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 54nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 800 Stücke:
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800+1.49 EUR
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BTS5090-1EJA BTS5090-1EJA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869871C1DD99A469&compId=BTS5090-1EJA.pdf?ci_sign=af1f6a10ac5d51a8222a21f88fb9386d216a8cca Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Supply voltage: 13.5V DC
Kind of output: N-Channel
Type of integrated circuit: power switch
Technology: PROFET™+ 12V
On-state resistance: 90mΩ
Number of channels: 1
Output current: 3A
Mounting: SMD
Case: DSO8
Kind of integrated circuit: high-side
auf Bestellung 2160 Stücke:
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25+2.97 EUR
38+1.93 EUR
61+1.19 EUR
65+1.12 EUR
1000+1.09 EUR
Mindestbestellmenge: 25
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DD340N22SHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9DE5F0EB1BF3D1&compId=DD340N22S.pdf?ci_sign=e5eda1c795ac4dba183156bb0a2d75f5dfcbb752 Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 330A; BG-PB50SB-1; screw
Max. forward impulse current: 10kA
Case: BG-PB50SB-1
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 2.2kV
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DD340N16SHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9E0203826933D1&compId=DD340N16S.pdf?ci_sign=a5ae5bb435ffb8b37d67c89c7429010eb38ef3d1 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 330A; BG-PB50SB-1; screw
Max. forward impulse current: 10kA
Case: BG-PB50SB-1
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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DD340N18S INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9E098F1DA9D3D1&compId=DD340N18S.pdf?ci_sign=d69aa001778daf2cf5654791e11fdee655d4a9fd Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw
Max. forward impulse current: 10kA
Case: BG-PB50SB-1
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.8kV
Produkt ist nicht verfügbar
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BSC040N10NS5SCATMA1 INFINEON TECHNOLOGIES Infineon-BSC040N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7dd8030083 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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4000+2.56 EUR
Mindestbestellmenge: 4000
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BGS13SN8E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGS13SN8-DS-v02_02-EN.pdf?fileId=5546d462584d1d4a0158cf52e3ae03a7 Category: Analog multiplexers and switches
Description: BGS13SN8E6327XTSA1
auf Bestellung 15000 Stücke:
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15000+0.28 EUR
Mindestbestellmenge: 15000
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IRF1310NPBF IRF1310NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A8EF1A6F5005056AB5A8F&compId=irf1310n.pdf?ci_sign=f86653c14d07ebcb26335896999b26309cf65da1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 73.3nC
auf Bestellung 322 Stücke:
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35+2.07 EUR
49+1.47 EUR
82+0.87 EUR
88+0.82 EUR
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IRF1310NSTRLPBF INFINEON TECHNOLOGIES irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
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IRF7469TRPBF IRF7469TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A4DAD4E937F1A303005056AB0C4F&compId=irf7469pbf.pdf?ci_sign=4f9a0459f93e314d75063acd13e89c05d9ddee28 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IMW120R020M1HXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9CAC1B39FA1380D3&compId=IMW120R020M1H.pdf?ci_sign=25498041a8175a6c5c2b05a81455287eb480677f Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 71A
Pulsed drain current: 213A
Power dissipation: 188W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPD70P04P409ATMA2 INFINEON TECHNOLOGIES Infineon-IPD70P04P4_09-DS-v01_00-en.pdf?fileId=db3a304329a0f6ee0129db9c0b0b5c51 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 40V; 73A; 75W; DPAK; automotive industry
Type of transistor: P-MOSFET
Technology: MOSFET
Drain-source voltage: 40V
Drain current: 73A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 54nC
Kind of channel: enhancement
Application: automotive industry
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2500+0.83 EUR
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IPP111N15N3GXKSA1 IPP111N15N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC8BEA3643E11C&compId=IPP111N15N3G-DTE.pdf?ci_sign=61da3a9c2d92c5d511a8d5d8168ea3865f37b927 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 221 Stücke:
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18+4.12 EUR
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IPP330P10NMAKSA1 INFINEON TECHNOLOGIES Infineon-IPP330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde48dfab1c0f Category: Transistors - Unclassified
Description: IPP330P10NMAKSA1
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50+3.09 EUR
200+2.77 EUR
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TLE7250GVIOXUMA2 INFINEON TECHNOLOGIES Infineon-TLE7250GVIO-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3cf633b45e56 Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
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2500+1.74 EUR
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XMC4700F144F1536AAXQMA1 XMC4700F144F1536AAXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 119
Case: PG-LQFP-144
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Memory: 276kB SRAM; 1.5MB FLASH
Operating temperature: -40...85°C
Family: XMC4700
Number of A/D channels: 26
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XMC4700F144F2048AAXQMA1 XMC4700F144F2048AAXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 352kBSRAM,2048kBFLASH
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 119
Case: PG-LQFP-144
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Memory: 352kB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: XMC4700
Number of A/D channels: 26
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XMC4700F144K2048AAXQMA1 XMC4700F144K2048AAXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 352kBSRAM,2048kBFLASH
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 119
Case: PG-LQFP-144
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Memory: 352kB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: XMC4700
Number of A/D channels: 26
Produkt ist nicht verfügbar
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XMC4700E196F1536AAXQMA1 XMC4700E196F1536AAXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Operating temperature: -40...85°C
Kind of core: 32-bit
Produkt ist nicht verfügbar
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XMC4700E196K2048AAXQMA1 XMC4700E196K2048AAXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 352kBSRAM,2048kBFLASH
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 155
Case: PG-LFBGA-196
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Memory: 352kB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: XMC4700
Number of A/D channels: 26
Produkt ist nicht verfügbar
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IRS25751LTRPBF INFINEON TECHNOLOGIES irs25751lpbf.pdf?fileId=5546d462533600a40153567b31da2837 Category: Unclassified
Description: IRS25751LTRPBF
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.75 EUR
Mindestbestellmenge: 3000
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BCX5616H6327XTSA1 INFINEON TECHNOLOGIES bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368 Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 11000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.17 EUR
Mindestbestellmenge: 1000
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IRFB4137PBF IRFB4137PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA26580F5B5EA&compId=IRFB4137PBF.pdf?ci_sign=5b0ba6a15b558079509649f4bc5e8ff398f62088 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 341W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB018N06NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB018N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67c38b3b2a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 60V; 187A; 188W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 187A
Power dissipation: 188W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhancement
Technology: SiC
Electrical mounting: SMT
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
800+1.13 EUR
Mindestbestellmenge: 800
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IGB03N120H2ATMA1 IGB03N120H2ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB5E52549D1820&compId=IGB03N120H2.pdf?ci_sign=c21893b66ac8927d4e5e4a46742ba5e04ed5f7aa Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 3.9A; 62.5W; D2PAK
Type of transistor: IGBT
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Turn-on time: 16.1ns
Turn-off time: 403ns
Collector current: 3.9A
Pulsed collector current: 9.9A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IGW03N120H2FKSA1 INFINEON TECHNOLOGIES IGW03N120H2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 9.6A; 62.5W; TO247-3; Eoff: 290uJ
Type of transistor: IGBT
Power dissipation: 62.5W
Case: TO247-3
Mounting: THT
Turn-on switching energy: 0.29mJ
Turn-off switching energy: 290µJ
Collector current: 9.6A
Pulsed collector current: 9.9A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
60+2.16 EUR
Mindestbestellmenge: 60
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BSS127IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS127I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421c5341d49 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 21mA; 500mW; SOT23; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 310Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.063 EUR
Mindestbestellmenge: 3000
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S25FL256LAGBHA020 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_32-MB128-MB_16-MB_3-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S25FL256LAGBHA023 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_32-MB128-MB_16-MB_3-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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S25FL256LAGBHB020 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S25FL256LAGBHB023 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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S25FL256LAGBHI020 INFINEON TECHNOLOGIES CYPR-S-A0006313919-1.pdf?t.download=true&u=5oefqw Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL256LAGBHI023 INFINEON TECHNOLOGIES INFN-S-A0017271261-1.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S25FL256LAGBHM020 INFINEON TECHNOLOGIES INFN-S-A0017271261-1.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S25FL256LAGBHM023 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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S25FL256LAGBHV020 INFINEON TECHNOLOGIES INFN-S-A0017271261-1.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL256LAGBHV023 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S25FL256LAGMFA000 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S25FL256LAGMFI000 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL256LAGMFI001 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Produkt ist nicht verfügbar
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S25FL256LAGMFI003 INFINEON TECHNOLOGIES INFN-S-A0017271261-1.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S25FL256LAGMFM000 INFINEON TECHNOLOGIES INFN-S-A0017271261-1.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S25FL256LAGMFM003 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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S25FL256LAGMFV000 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL256LAGMFV001 INFINEON TECHNOLOGIES CYPR-S-A0006313919-1.pdf?t.download=true&u=5oefqw Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
Produkt ist nicht verfügbar
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S25FL256LAGNFB010 INFINEON TECHNOLOGIES INFN-S-A0017271261-1.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S25FL256LAGNFI011 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Produkt ist nicht verfügbar
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IAUC60N10S5L110ATMA1 Infineon-IAUC60N10S5L110-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b9370c4677
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 88W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUS260N10S5N019TATMA1 Infineon-IAUS260N10S5N019T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e04616a61b8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 91A
Pulsed drain current: 995A
Power dissipation: 300W
Case: PG-HDSOP-16
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 166nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPD60N10S412ATMA1 fundamentals-of-power-semiconductors
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 60A; 94W; DPAK; automotive industry
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 94W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
Application: automotive industry
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.81 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPB020N10N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA87948325611C&compId=IPB020N10N5-dte.pdf?ci_sign=0e271e4747a3359c20c2048905fcf7fe0c97f30a
IPB020N10N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB020N10N5LF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2F8657C14D10749&compId=IPB020N10N5LF.pdf?ci_sign=d2dde93c8ab6b6de09ca42907929750b1d27bba8
IPB020N10N5LF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB100N10S305ATMA1 Infineon-IPP_B_I100N10S3-DS-v01_00-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908bd4d8595c&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 100A; Idm: 400A
Technology: OptiMOS® -T
Case: PG-TO263-3-2
Type of transistor: N-MOSFET
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 4.8mΩ
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 100V
Power dissipation: 300W
Pulsed drain current: 400A
Produkt ist nicht verfügbar
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IAUC100N10S5L040ATMA1 Infineon-IAUC100N10S5L040-DS-v01_00-EN.pdf?fileId=5546d462694c98b401696d0485683542
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 168W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 168W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N10S5L054ATMA1 Infineon-IAUC100N10S5L054-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd429850211
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 400A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 400A
Power dissipation: 130W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N10S5N040ATMA1 Infineon-IAUC100N10S5N040-DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164b70f994060e8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BFR193FH6327XTSA1 bfr193f.pdf?folderId=db3a30431400ef68011425b2dfaf05c6&fileId=db3a30431441fb5d0114acfcde76152c
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 80mA; 580mW; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT723
Current gain: 70
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BSC040N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E5BB2ADA011C&compId=BSC040N08NS5-DTE.pdf?ci_sign=b51bf54e85ec6f47698e8c2b8ec68aa60b2aa641
BSC040N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC40N08S5L140ATMA1 Infineon-IAUC40N08S5L140-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b920be4674
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 28A; Idm: 160A; 56W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 28A
Pulsed drain current: 160A
Power dissipation: 56W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 18.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUS240N08S5N019ATMA1 IAUS240N08S5N019.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 173A; Idm: 960A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 173A
Pulsed drain current: 960A
Power dissipation: 230W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB040N08NF2SATMA1 Infineon-IPB040N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc00361b15
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 80V; 107A; 150W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 80V
Drain current: 107A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 54nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+1.49 EUR
Mindestbestellmenge: 800
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BTS5090-1EJA pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869871C1DD99A469&compId=BTS5090-1EJA.pdf?ci_sign=af1f6a10ac5d51a8222a21f88fb9386d216a8cca
BTS5090-1EJA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Supply voltage: 13.5V DC
Kind of output: N-Channel
Type of integrated circuit: power switch
Technology: PROFET™+ 12V
On-state resistance: 90mΩ
Number of channels: 1
Output current: 3A
Mounting: SMD
Case: DSO8
Kind of integrated circuit: high-side
auf Bestellung 2160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.97 EUR
38+1.93 EUR
61+1.19 EUR
65+1.12 EUR
1000+1.09 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
DD340N22SHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9DE5F0EB1BF3D1&compId=DD340N22S.pdf?ci_sign=e5eda1c795ac4dba183156bb0a2d75f5dfcbb752
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 330A; BG-PB50SB-1; screw
Max. forward impulse current: 10kA
Case: BG-PB50SB-1
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 2.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD340N16SHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9E0203826933D1&compId=DD340N16S.pdf?ci_sign=a5ae5bb435ffb8b37d67c89c7429010eb38ef3d1
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 330A; BG-PB50SB-1; screw
Max. forward impulse current: 10kA
Case: BG-PB50SB-1
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
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DD340N18S pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9E098F1DA9D3D1&compId=DD340N18S.pdf?ci_sign=d69aa001778daf2cf5654791e11fdee655d4a9fd
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw
Max. forward impulse current: 10kA
Case: BG-PB50SB-1
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC040N10NS5SCATMA1 Infineon-BSC040N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7dd8030083
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+2.56 EUR
Mindestbestellmenge: 4000
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BGS13SN8E6327XTSA1 Infineon-BGS13SN8-DS-v02_02-EN.pdf?fileId=5546d462584d1d4a0158cf52e3ae03a7
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: BGS13SN8E6327XTSA1
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.28 EUR
Mindestbestellmenge: 15000
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IRF1310NPBF pVersion=0046&contRep=ZT&docId=E1C04E34F57A8EF1A6F5005056AB5A8F&compId=irf1310n.pdf?ci_sign=f86653c14d07ebcb26335896999b26309cf65da1
IRF1310NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 73.3nC
auf Bestellung 322 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
49+1.47 EUR
82+0.87 EUR
88+0.82 EUR
Mindestbestellmenge: 35
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IRF1310NSTRLPBF irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7469TRPBF pVersion=0046&contRep=ZT&docId=E221A4DAD4E937F1A303005056AB0C4F&compId=irf7469pbf.pdf?ci_sign=4f9a0459f93e314d75063acd13e89c05d9ddee28
IRF7469TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IMW120R020M1HXKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9CAC1B39FA1380D3&compId=IMW120R020M1H.pdf?ci_sign=25498041a8175a6c5c2b05a81455287eb480677f
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 71A
Pulsed drain current: 213A
Power dissipation: 188W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD70P04P409ATMA2 Infineon-IPD70P04P4_09-DS-v01_00-en.pdf?fileId=db3a304329a0f6ee0129db9c0b0b5c51
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 40V; 73A; 75W; DPAK; automotive industry
Type of transistor: P-MOSFET
Technology: MOSFET
Drain-source voltage: 40V
Drain current: 73A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 54nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.83 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPP111N15N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC8BEA3643E11C&compId=IPP111N15N3G-DTE.pdf?ci_sign=61da3a9c2d92c5d511a8d5d8168ea3865f37b927
IPP111N15N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 221 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.12 EUR
Mindestbestellmenge: 18
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IPP330P10NMAKSA1 Infineon-IPP330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde48dfab1c0f
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPP330P10NMAKSA1
auf Bestellung 598 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+3.09 EUR
200+2.77 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
TLE7250GVIOXUMA2 Infineon-TLE7250GVIO-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3cf633b45e56
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 52500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.74 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
XMC4700F144F1536AAXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a
XMC4700F144F1536AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 119
Case: PG-LQFP-144
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Memory: 276kB SRAM; 1.5MB FLASH
Operating temperature: -40...85°C
Family: XMC4700
Number of A/D channels: 26
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4700F144F2048AAXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a
XMC4700F144F2048AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 352kBSRAM,2048kBFLASH
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 119
Case: PG-LQFP-144
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Memory: 352kB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: XMC4700
Number of A/D channels: 26
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4700F144K2048AAXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a
XMC4700F144K2048AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 352kBSRAM,2048kBFLASH
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 119
Case: PG-LQFP-144
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Memory: 352kB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: XMC4700
Number of A/D channels: 26
Produkt ist nicht verfügbar
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XMC4700E196F1536AAXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a
XMC4700E196F1536AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Operating temperature: -40...85°C
Kind of core: 32-bit
Produkt ist nicht verfügbar
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XMC4700E196K2048AAXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a
XMC4700E196K2048AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 352kBSRAM,2048kBFLASH
Type of integrated circuit: ARM microcontroller
Number of inputs/outputs: 155
Case: PG-LFBGA-196
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Memory: 352kB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: XMC4700
Number of A/D channels: 26
Produkt ist nicht verfügbar
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IRS25751LTRPBF irs25751lpbf.pdf?fileId=5546d462533600a40153567b31da2837
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: IRS25751LTRPBF
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.75 EUR
Mindestbestellmenge: 3000
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BCX5616H6327XTSA1 bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 11000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.17 EUR
Mindestbestellmenge: 1000
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IRFB4137PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA26580F5B5EA&compId=IRFB4137PBF.pdf?ci_sign=5b0ba6a15b558079509649f4bc5e8ff398f62088
IRFB4137PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 341W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB018N06NF2SATMA1 Infineon-IPB018N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67c38b3b2a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 60V; 187A; 188W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 187A
Power dissipation: 188W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhancement
Technology: SiC
Electrical mounting: SMT
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+1.13 EUR
Mindestbestellmenge: 800
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IGB03N120H2ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB5E52549D1820&compId=IGB03N120H2.pdf?ci_sign=c21893b66ac8927d4e5e4a46742ba5e04ed5f7aa
IGB03N120H2ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 3.9A; 62.5W; D2PAK
Type of transistor: IGBT
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Turn-on time: 16.1ns
Turn-off time: 403ns
Collector current: 3.9A
Pulsed collector current: 9.9A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IGW03N120H2FKSA1 IGW03N120H2.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 9.6A; 62.5W; TO247-3; Eoff: 290uJ
Type of transistor: IGBT
Power dissipation: 62.5W
Case: TO247-3
Mounting: THT
Turn-on switching energy: 0.29mJ
Turn-off switching energy: 290µJ
Collector current: 9.6A
Pulsed collector current: 9.9A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+2.16 EUR
Mindestbestellmenge: 60
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BSS127IXTSA1 Infineon-BSS127I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421c5341d49
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 21mA; 500mW; SOT23; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 310Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.063 EUR
Mindestbestellmenge: 3000
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S25FL256LAGBHA020 Infineon-S25FL256L_S25FL128L_256-MB_32-MB128-MB_16-MB_3-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256LAGBHA023 Infineon-S25FL256L_S25FL128L_256-MB_32-MB128-MB_16-MB_3-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256LAGBHB020 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256LAGBHB023 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256LAGBHI020 CYPR-S-A0006313919-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256LAGBHI023 INFN-S-A0017271261-1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256LAGBHM020 INFN-S-A0017271261-1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256LAGBHM023 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256LAGBHV020 INFN-S-A0017271261-1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256LAGBHV023 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256LAGMFA000 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256LAGMFI000 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256LAGMFI001 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256LAGMFI003 INFN-S-A0017271261-1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256LAGMFM000 INFN-S-A0017271261-1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256LAGMFM003 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256LAGMFV000 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256LAGMFV001 CYPR-S-A0006313919-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256LAGNFB010 INFN-S-A0017271261-1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256LAGNFI011 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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