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1EDI20N12AFXUMA1 1EDI20N12AFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD3DFF0212378BF&compId=1EDI20N12AF.pdf?ci_sign=35d6f21bfdc47584f0a10023f30c07b34fe60273 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™; GaN
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Produkt ist nicht verfügbar
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IGT60R070D1ATMA1 IGT60R070D1ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBE420228EDB8BF&compId=IGT60R070D1.pdf?ci_sign=7e4b352780f0dc62839476384facd6fe5b07cb26 Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate-source voltage: -10V
Gate charge: 5.8nC
Gate current: 20mA
On-state resistance: 70mΩ
Drain current: 31A
Pulsed drain current: 60A
Power dissipation: 125W
Drain-source voltage: 600V
Technology: CoolGaN™
Case: PG-HSOF-8-3
Kind of channel: enhancement
Kind of transistor: HEMT
Type of transistor: N-JFET
Produkt ist nicht verfügbar
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ITS711L1 ITS711L1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6A8FB46B515EA&compId=ITS711L1.pdf?ci_sign=10b7477323f83047679ef94230d193e5429d55bb Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.7A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
Supply voltage: 5...34V DC
Output voltage: 2...4V
Technology: Industrial PROFET
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.16 EUR
14+5.31 EUR
50+4.56 EUR
100+4.26 EUR
250+3.88 EUR
Mindestbestellmenge: 10
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BSP77E6433 BSP77E6433 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586975EB63FE4A469&compId=BSP77E6433.pdf?ci_sign=6239ab778401a773ab18950fa653d6f33d6eda79 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 2693 Stücke:
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24+2.99 EUR
37+1.94 EUR
42+1.73 EUR
100+1.46 EUR
250+1.29 EUR
500+1.17 EUR
1000+1.06 EUR
Mindestbestellmenge: 24
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IPA60R600P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3b403a7a02ca Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6A; 21W; TO220FP; SMT
Mounting: THT
Gate charge: 9nC
On-state resistance: 0.49Ω
Drain current: 6A
Power dissipation: 21W
Gate-source voltage: 20V
Drain-source voltage: 600V
Technology: MOSFET
Kind of channel: enhancement
Case: TO220FP
Type of transistor: N-MOSFET
Electrical mounting: SMT
auf Bestellung 1954 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.42 EUR
Mindestbestellmenge: 200
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IPA65R400CEXKSA1 INFINEON TECHNOLOGIES Infineon-IPA65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384fc4e327493 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 15.1A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 15.1A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.97 EUR
Mindestbestellmenge: 100
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IRFH5250DTRPBF IRFH5250DTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B69F73CEC8F1A303005056AB0C4F&compId=irfh5250dpbf.pdf?ci_sign=67286b03f8495111b6935f0dc7a1d7f61db34ce8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5250TRPBF IRFH5250TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B6BCA3E4D2F1A303005056AB0C4F&compId=irfh5250pbf.pdf?ci_sign=c6bcf5bec11fd72e95d8b9f2ed53f6c2dd09f369 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50P04P413ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50P04P4_13-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f781f908b2da3&ack=t Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Type of transistor: P-MOSFET
Mounting: SMD
Technology: OptiMOS® -P2
Polarisation: unipolar
Pulsed drain current: -200A
Drain current: -45A
Drain-source voltage: -40V
On-state resistance: 12.6mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Case: PG-TO252-3-313
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAT1804E6327HTSA1 BAT1804E6327HTSA1 INFINEON TECHNOLOGIES BAT18.pdf Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOT23; double series; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
auf Bestellung 5975 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
145+0.49 EUR
178+0.4 EUR
247+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
3000+0.16 EUR
Mindestbestellmenge: 103
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IRFU4510PBF IRFU4510PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF8E7AC53835EA&compId=IRFU4510PBF.pdf?ci_sign=52b38537d55835881e2e9ee000aff0c490a07272 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 143W
auf Bestellung 458 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.36 EUR
46+1.59 EUR
50+1.46 EUR
60+1.2 EUR
75+1.14 EUR
150+1.03 EUR
450+0.99 EUR
Mindestbestellmenge: 31
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IRF9393TRPBF IRF9393TRPBF INFINEON TECHNOLOGIES irf9393pbf.pdf?fileId=5546d462533600a401535611877d1db3 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.3A; 1.6W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.3A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 19.4mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 461 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
125+0.57 EUR
176+0.41 EUR
204+0.35 EUR
250+0.3 EUR
Mindestbestellmenge: 91
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IPB60R125C6ATMA1 IPB60R125C6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594126B59FFD1BF&compId=IPB60R125C6-DTE.pdf?ci_sign=81e827ead9db9d126ae967c1d00236c615806a73 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S25FL128LAGNFM010 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...125°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL128LAGNFM013 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...125°C
Operating frequency: 133MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S25FL512SDSMFM010 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Interface: QUAD SPI
Mounting: SMD
Kind of package: in-tray
Kind of interface: serial
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Type of integrated circuit: FLASH memory
Application: automotive
Case: SOIC16
Kind of memory: NOR
Produkt ist nicht verfügbar
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S25FL512SDSMFM013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Interface: QUAD SPI
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Type of integrated circuit: FLASH memory
Application: automotive
Case: SOIC16
Kind of memory: NOR
Produkt ist nicht verfügbar
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BSS306NH6327XTSA1 BSS306NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7E3071C8DD10B&compId=BSS306NH6327XTSA1.pdf?ci_sign=b57fd6087103aae6c00284217bd6b1dfba4849d0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: SOT23
On-state resistance: 93mΩ
Power dissipation: 0.5W
Drain current: 2.3A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Polarisation: unipolar
auf Bestellung 10232 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
291+0.25 EUR
414+0.17 EUR
477+0.15 EUR
575+0.12 EUR
650+0.11 EUR
1000+0.097 EUR
3000+0.09 EUR
Mindestbestellmenge: 193
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BSS214NH6327XTSA1 BSS214NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7CF1EC57F710B&compId=BSS214NH6327XTSA1.pdf?ci_sign=3d212ae0b6db65579c46b913210d28885837f077 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
auf Bestellung 3317 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
394+0.18 EUR
569+0.13 EUR
661+0.11 EUR
797+0.09 EUR
908+0.079 EUR
1025+0.07 EUR
3000+0.059 EUR
Mindestbestellmenge: 264
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BFP460H6327XTSA1 BFP460H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343
Collector current: 70mA
Power dissipation: 0.23W
Collector-emitter voltage: 4.5V
Current gain: 90...160
Frequency: 22GHz
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Kind of package: reel; tape
Technology: SIEGET™
Mounting: SMD
Case: SOT343
auf Bestellung 2945 Stücke:
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218+0.33 EUR
272+0.26 EUR
307+0.23 EUR
355+0.2 EUR
391+0.18 EUR
424+0.17 EUR
463+0.15 EUR
Mindestbestellmenge: 218
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BSS126IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS126I-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a017376e5a5f370d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 21mA; 500mW; SOT23; SMT
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 280Ω
Mounting: SMD
Gate charge: 1.4nC
Application: automotive industry
Electrical mounting: SMT
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.068 EUR
Mindestbestellmenge: 3000
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S25FS064SAGNFB033 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial
Application: automotive
Kind of package: reel; tape
Case: LGA8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 1.7...2V
Memory: 64Mb FLASH
Operating frequency: 133MHz
Produkt ist nicht verfügbar
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IRF7424TRPBF IRF7424TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A2F20A319EF1A303005056AB0C4F&compId=irf7424pbf.pdf?ci_sign=2acda5302fc942a596720f26cd0040453e140573 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7425TRPBF IRF7425TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E4D16F119F1A6F5005056AB5A8F&compId=irf7425pbf.pdf?ci_sign=81dddf218e1b31c29598ff40a3f7ac4bdc2728db pVersion=0046&contRep=ZT&docId=E221A30B2ACF36F1A303005056AB0C4F&compId=irf7425pbf.pdf?ci_sign=8154e3d2bf5a42d04cc55b32e63b7ef1350777ab Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 899 Stücke:
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55+1.3 EUR
72+1 EUR
84+0.86 EUR
Mindestbestellmenge: 55
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IRF9317TRPBF IRF9317TRPBF INFINEON TECHNOLOGIES irf9317pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Case: SO8
Mounting: SMD
Drain-source voltage: -30V
Drain current: -16A
Power dissipation: 2.5W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRF9388TRPBF INFINEON TECHNOLOGIES irf9388pbf.pdf?fileId=5546d462533600a40153561170191dad Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 12A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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XMC4800E196F1536AAXQMA1 XMC4800E196F1536AAXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Kind of architecture: Cortex M4
Case: PG-LFBGA-196
Family: XMC4800
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Produkt ist nicht verfügbar
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XMC4800E196K1536AAXQMA1 XMC4800E196K1536AAXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Kind of architecture: Cortex M4
Case: PG-LFBGA-196
Family: XMC4800
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Produkt ist nicht verfügbar
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ISP650P06NMXTSA1 INFINEON TECHNOLOGIES Infineon-ISP650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a06cc34e37280 Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.69 EUR
Mindestbestellmenge: 1000
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BSD235CH6327XTSA1 BSD235CH6327XTSA1 INFINEON TECHNOLOGIES BSD235CH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.95/-0.53A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 0.415/1.221Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
auf Bestellung 2609 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
204+0.35 EUR
236+0.3 EUR
348+0.21 EUR
410+0.17 EUR
589+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 157
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IRFL4310TRPBF IRFL4310TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BDE20E8924F1A303005056AB0C4F&compId=irfl4310pbf.pdf?ci_sign=a876a1102106435a0080d1318abe3e00ee948262 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IPD053N08N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD053N08N3-DS-v01_01-en.pdf?fileId=db3a304317a748360117cf072cf31ce8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 90A; 150W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 80V
Drain current: 90A
Power dissipation: 150W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.03 EUR
Mindestbestellmenge: 2500
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S25FL128LAGNFA010 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL128LAGNFB010 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL128LAGNFI013 INFINEON TECHNOLOGIES INFN-S-A0017271261-1.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128LAGNFV013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGNFA000 INFINEON TECHNOLOGIES infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGNFA003 INFINEON TECHNOLOGIES Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Operating frequency: 133MHz
Produkt ist nicht verfügbar
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S25FL128SAGNFB000 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL128SAGNFB003 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGNFI010 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL128SAGNFI013 INFINEON TECHNOLOGIES 001-98283%20Rev%20T.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGNFM000 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...125°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGNFM003 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...125°C
Operating frequency: 133MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S25FL128SAGNFV000 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL128SAGNFV003 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7734TRLPBF IRFS7734TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBF008A81DDA143&compId=IRFS7734TRLPBF.pdf?ci_sign=378c073419cbee0051b53b13427597d9b9d84be5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 290W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 778 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
55+1.32 EUR
100+1.26 EUR
250+1.13 EUR
500+1.07 EUR
Mindestbestellmenge: 51
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IRFS4615TRLPBF IRFS4615TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C919EF3AF7F1A303005056AB0C4F&compId=irfs4615pbf.pdf?ci_sign=00aacefc98a77bbdafb41717ba543c793224741a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKW50N120CS7XKSA1 INFINEON TECHNOLOGIES Infineon-IKW50N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d8862059d Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 82A; 428W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
30+6.61 EUR
Mindestbestellmenge: 30
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BSP322PH6327XTSA1 BSP322PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA921AA3AD6611CC&compId=BSP322PH6327XTSA1-dte.pdf?ci_sign=c8cce04bab6e5a8cf722ea0efeae955fac952ad3 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Kind of channel: enhancement
Mounting: SMD
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1A
On-state resistance: 0.8Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
118+0.61 EUR
131+0.55 EUR
148+0.48 EUR
250+0.43 EUR
Mindestbestellmenge: 71
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ISZ0702NLSATMA1 INFINEON TECHNOLOGIES Infineon-ISZ0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd7e5c9c6e0d Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.61 EUR
Mindestbestellmenge: 5000
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IPP075N15N3GXKSA1 IPP075N15N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC81F7082D211C&compId=IPP075N15N3G-DTE.pdf?ci_sign=2206d84c866b44030e934a449c4dbb0ec14767f4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.93 EUR
50+2.03 EUR
100+1.87 EUR
250+1.72 EUR
Mindestbestellmenge: 19
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IPP126N10N3GXKSA1 IPP126N10N3GXKSA1 INFINEON TECHNOLOGIES IPP126N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Power dissipation: 94W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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BCV27E6327 BCV27E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869911BE77406469&compId=BCV27E6327.pdf?ci_sign=0b7df3e49f8a209e013846618a78af40dc82aaae Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Kind of transistor: Darlington
auf Bestellung 2764 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
242+0.3 EUR
428+0.17 EUR
639+0.11 EUR
1000+0.096 EUR
Mindestbestellmenge: 179
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IPN80R600P7ATMA1 IPN80R600P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDF1FF656693D1&compId=IPN80R600P7.pdf?ci_sign=74698a736421a2fe8081b11c8402fd2740b28ada Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223; ESD
Mounting: SMD
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 0.6Ω
Drain current: 5.5A
Power dissipation: 7.4W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: PG-SOT223
Type of transistor: N-MOSFET
Kind of package: reel
Produkt ist nicht verfügbar
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BFS481H6327XTSA1 BFS481H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998BC2B95CA8C9820&compId=BFS481.pdf?ci_sign=0ca4fc8b068827a5810c381b8177efadd7b9a937 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 12V; 20mA; 0.175W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT363
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Produkt ist nicht verfügbar
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SGB02N120 SGB02N120 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58D27D01791E74A&compId=SGB02N120.pdf?ci_sign=716fc339a4ef5be4f99c09e2af256bd2f01bdce2 Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.8A; 62W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 2.8A
Power dissipation: 62W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 9.6A
Mounting: SMD
Kind of package: reel
Turn-on time: 40ns
Turn-off time: 375ns
Produkt ist nicht verfügbar
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IRFR3711TRPBF IRFR3711TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C40AD4DECBF1A303005056AB0C4F&compId=irfr3711pbf.pdf?ci_sign=e542c345ad24298e236838b7358e141f237c1372 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3411TRPBF IRFR3411TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCFB187B1515EA&compId=IRFR3411TRPBF.pdf?ci_sign=11f0934eda20c38577d0642d48d0a25e8d51146b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3504ZTRPBF IRFR3504ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCFE6C57FBD5EA&compId=IRFR3504ZTRPBF.pdf?ci_sign=2c657853350c22e49e47ff7c72379d04a5e64df2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDI20N12AFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD3DFF0212378BF&compId=1EDI20N12AF.pdf?ci_sign=35d6f21bfdc47584f0a10023f30c07b34fe60273
1EDI20N12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™; GaN
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Produkt ist nicht verfügbar
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IGT60R070D1ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBE420228EDB8BF&compId=IGT60R070D1.pdf?ci_sign=7e4b352780f0dc62839476384facd6fe5b07cb26
IGT60R070D1ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate-source voltage: -10V
Gate charge: 5.8nC
Gate current: 20mA
On-state resistance: 70mΩ
Drain current: 31A
Pulsed drain current: 60A
Power dissipation: 125W
Drain-source voltage: 600V
Technology: CoolGaN™
Case: PG-HSOF-8-3
Kind of channel: enhancement
Kind of transistor: HEMT
Type of transistor: N-JFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ITS711L1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6A8FB46B515EA&compId=ITS711L1.pdf?ci_sign=10b7477323f83047679ef94230d193e5429d55bb
ITS711L1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.7A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
Supply voltage: 5...34V DC
Output voltage: 2...4V
Technology: Industrial PROFET
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.16 EUR
14+5.31 EUR
50+4.56 EUR
100+4.26 EUR
250+3.88 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
BSP77E6433 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586975EB63FE4A469&compId=BSP77E6433.pdf?ci_sign=6239ab778401a773ab18950fa653d6f33d6eda79
BSP77E6433
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 2693 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.99 EUR
37+1.94 EUR
42+1.73 EUR
100+1.46 EUR
250+1.29 EUR
500+1.17 EUR
1000+1.06 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R600P7SXKSA1 Infineon-IPA60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3b403a7a02ca
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6A; 21W; TO220FP; SMT
Mounting: THT
Gate charge: 9nC
On-state resistance: 0.49Ω
Drain current: 6A
Power dissipation: 21W
Gate-source voltage: 20V
Drain-source voltage: 600V
Technology: MOSFET
Kind of channel: enhancement
Case: TO220FP
Type of transistor: N-MOSFET
Electrical mounting: SMT
auf Bestellung 1954 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.42 EUR
Mindestbestellmenge: 200
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IPA65R400CEXKSA1 Infineon-IPA65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384fc4e327493
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 15.1A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 15.1A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.97 EUR
Mindestbestellmenge: 100
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IRFH5250DTRPBF pVersion=0046&contRep=ZT&docId=E221B69F73CEC8F1A303005056AB0C4F&compId=irfh5250dpbf.pdf?ci_sign=67286b03f8495111b6935f0dc7a1d7f61db34ce8
IRFH5250DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5250TRPBF pVersion=0046&contRep=ZT&docId=E221B6BCA3E4D2F1A303005056AB0C4F&compId=irfh5250pbf.pdf?ci_sign=c6bcf5bec11fd72e95d8b9f2ed53f6c2dd09f369
IRFH5250TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50P04P413ATMA1 Infineon-IPD50P04P4_13-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f781f908b2da3&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Type of transistor: P-MOSFET
Mounting: SMD
Technology: OptiMOS® -P2
Polarisation: unipolar
Pulsed drain current: -200A
Drain current: -45A
Drain-source voltage: -40V
On-state resistance: 12.6mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Case: PG-TO252-3-313
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT1804E6327HTSA1 BAT18.pdf
BAT1804E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOT23; double series; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
auf Bestellung 5975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
145+0.49 EUR
178+0.4 EUR
247+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
3000+0.16 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
IRFU4510PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF8E7AC53835EA&compId=IRFU4510PBF.pdf?ci_sign=52b38537d55835881e2e9ee000aff0c490a07272
IRFU4510PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 143W
auf Bestellung 458 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.36 EUR
46+1.59 EUR
50+1.46 EUR
60+1.2 EUR
75+1.14 EUR
150+1.03 EUR
450+0.99 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
IRF9393TRPBF irf9393pbf.pdf?fileId=5546d462533600a401535611877d1db3
IRF9393TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.3A; 1.6W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.3A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 19.4mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 461 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
125+0.57 EUR
176+0.41 EUR
204+0.35 EUR
250+0.3 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R125C6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594126B59FFD1BF&compId=IPB60R125C6-DTE.pdf?ci_sign=81e827ead9db9d126ae967c1d00236c615806a73
IPB60R125C6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128LAGNFM010 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...125°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128LAGNFM013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...125°C
Operating frequency: 133MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SDSMFM010 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Interface: QUAD SPI
Mounting: SMD
Kind of package: in-tray
Kind of interface: serial
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Type of integrated circuit: FLASH memory
Application: automotive
Case: SOIC16
Kind of memory: NOR
Produkt ist nicht verfügbar
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S25FL512SDSMFM013
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Interface: QUAD SPI
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Type of integrated circuit: FLASH memory
Application: automotive
Case: SOIC16
Kind of memory: NOR
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS306NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7E3071C8DD10B&compId=BSS306NH6327XTSA1.pdf?ci_sign=b57fd6087103aae6c00284217bd6b1dfba4849d0
BSS306NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: SOT23
On-state resistance: 93mΩ
Power dissipation: 0.5W
Drain current: 2.3A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Polarisation: unipolar
auf Bestellung 10232 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
291+0.25 EUR
414+0.17 EUR
477+0.15 EUR
575+0.12 EUR
650+0.11 EUR
1000+0.097 EUR
3000+0.09 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
BSS214NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7CF1EC57F710B&compId=BSS214NH6327XTSA1.pdf?ci_sign=3d212ae0b6db65579c46b913210d28885837f077
BSS214NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
auf Bestellung 3317 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
394+0.18 EUR
569+0.13 EUR
661+0.11 EUR
797+0.09 EUR
908+0.079 EUR
1025+0.07 EUR
3000+0.059 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
BFP460H6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP460H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343
Collector current: 70mA
Power dissipation: 0.23W
Collector-emitter voltage: 4.5V
Current gain: 90...160
Frequency: 22GHz
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Kind of package: reel; tape
Technology: SIEGET™
Mounting: SMD
Case: SOT343
auf Bestellung 2945 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
272+0.26 EUR
307+0.23 EUR
355+0.2 EUR
391+0.18 EUR
424+0.17 EUR
463+0.15 EUR
Mindestbestellmenge: 218
Im Einkaufswagen  Stück im Wert von  UAH
BSS126IXTSA1 Infineon-BSS126I-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a017376e5a5f370d1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 21mA; 500mW; SOT23; SMT
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 280Ω
Mounting: SMD
Gate charge: 1.4nC
Application: automotive industry
Electrical mounting: SMT
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.068 EUR
Mindestbestellmenge: 3000
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S25FS064SAGNFB033
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial
Application: automotive
Kind of package: reel; tape
Case: LGA8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 1.7...2V
Memory: 64Mb FLASH
Operating frequency: 133MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7424TRPBF pVersion=0046&contRep=ZT&docId=E221A2F20A319EF1A303005056AB0C4F&compId=irf7424pbf.pdf?ci_sign=2acda5302fc942a596720f26cd0040453e140573
IRF7424TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7425TRPBF pVersion=0046&contRep=ZT&docId=E1C04E4D16F119F1A6F5005056AB5A8F&compId=irf7425pbf.pdf?ci_sign=81dddf218e1b31c29598ff40a3f7ac4bdc2728db pVersion=0046&contRep=ZT&docId=E221A30B2ACF36F1A303005056AB0C4F&compId=irf7425pbf.pdf?ci_sign=8154e3d2bf5a42d04cc55b32e63b7ef1350777ab
IRF7425TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 899 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
72+1 EUR
84+0.86 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IRF9317TRPBF irf9317pbf.pdf
IRF9317TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Case: SO8
Mounting: SMD
Drain-source voltage: -30V
Drain current: -16A
Power dissipation: 2.5W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9388TRPBF irf9388pbf.pdf?fileId=5546d462533600a40153561170191dad
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 12A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4800E196F1536AAXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a
XMC4800E196F1536AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Kind of architecture: Cortex M4
Case: PG-LFBGA-196
Family: XMC4800
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Produkt ist nicht verfügbar
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XMC4800E196K1536AAXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a
XMC4800E196K1536AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Kind of architecture: Cortex M4
Case: PG-LFBGA-196
Family: XMC4800
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Produkt ist nicht verfügbar
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ISP650P06NMXTSA1 Infineon-ISP650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a06cc34e37280
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.69 EUR
Mindestbestellmenge: 1000
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BSD235CH6327XTSA1 BSD235CH6327XTSA1.pdf
BSD235CH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.95/-0.53A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 0.415/1.221Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
auf Bestellung 2609 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
204+0.35 EUR
236+0.3 EUR
348+0.21 EUR
410+0.17 EUR
589+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 157
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IRFL4310TRPBF pVersion=0046&contRep=ZT&docId=E221BDE20E8924F1A303005056AB0C4F&compId=irfl4310pbf.pdf?ci_sign=a876a1102106435a0080d1318abe3e00ee948262
IRFL4310TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IPD053N08N3GATMA1 Infineon-IPD053N08N3-DS-v01_01-en.pdf?fileId=db3a304317a748360117cf072cf31ce8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 90A; 150W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 80V
Drain current: 90A
Power dissipation: 150W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.03 EUR
Mindestbestellmenge: 2500
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S25FL128LAGNFA010 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128LAGNFB010 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL128LAGNFI013 INFN-S-A0017271261-1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128LAGNFV013
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGNFA000 infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGNFA003 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Operating frequency: 133MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGNFB000
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGNFB003
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGNFI010 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
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S25FL128SAGNFI013 001-98283%20Rev%20T.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGNFM000 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...125°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGNFM003
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...125°C
Operating frequency: 133MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGNFV000 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGNFV003 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7734TRLPBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBF008A81DDA143&compId=IRFS7734TRLPBF.pdf?ci_sign=378c073419cbee0051b53b13427597d9b9d84be5
IRFS7734TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 290W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 778 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
55+1.32 EUR
100+1.26 EUR
250+1.13 EUR
500+1.07 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4615TRLPBF pVersion=0046&contRep=ZT&docId=E221C919EF3AF7F1A303005056AB0C4F&compId=irfs4615pbf.pdf?ci_sign=00aacefc98a77bbdafb41717ba543c793224741a
IRFS4615TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N120CS7XKSA1 Infineon-IKW50N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d8862059d
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 82A; 428W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+6.61 EUR
Mindestbestellmenge: 30
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BSP322PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA921AA3AD6611CC&compId=BSP322PH6327XTSA1-dte.pdf?ci_sign=c8cce04bab6e5a8cf722ea0efeae955fac952ad3
BSP322PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Kind of channel: enhancement
Mounting: SMD
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1A
On-state resistance: 0.8Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
118+0.61 EUR
131+0.55 EUR
148+0.48 EUR
250+0.43 EUR
Mindestbestellmenge: 71
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ISZ0702NLSATMA1 Infineon-ISZ0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd7e5c9c6e0d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.61 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IPP075N15N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC81F7082D211C&compId=IPP075N15N3G-DTE.pdf?ci_sign=2206d84c866b44030e934a449c4dbb0ec14767f4
IPP075N15N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
50+2.03 EUR
100+1.87 EUR
250+1.72 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IPP126N10N3GXKSA1 IPP126N10N3G-DTE.pdf
IPP126N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Power dissipation: 94W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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BCV27E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869911BE77406469&compId=BCV27E6327.pdf?ci_sign=0b7df3e49f8a209e013846618a78af40dc82aaae
BCV27E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Kind of transistor: Darlington
auf Bestellung 2764 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
242+0.3 EUR
428+0.17 EUR
639+0.11 EUR
1000+0.096 EUR
Mindestbestellmenge: 179
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IPN80R600P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDF1FF656693D1&compId=IPN80R600P7.pdf?ci_sign=74698a736421a2fe8081b11c8402fd2740b28ada
IPN80R600P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223; ESD
Mounting: SMD
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 0.6Ω
Drain current: 5.5A
Power dissipation: 7.4W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: PG-SOT223
Type of transistor: N-MOSFET
Kind of package: reel
Produkt ist nicht verfügbar
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BFS481H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998BC2B95CA8C9820&compId=BFS481.pdf?ci_sign=0ca4fc8b068827a5810c381b8177efadd7b9a937
BFS481H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 12V; 20mA; 0.175W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT363
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
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SGB02N120 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58D27D01791E74A&compId=SGB02N120.pdf?ci_sign=716fc339a4ef5be4f99c09e2af256bd2f01bdce2
SGB02N120
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.8A; 62W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 2.8A
Power dissipation: 62W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 9.6A
Mounting: SMD
Kind of package: reel
Turn-on time: 40ns
Turn-off time: 375ns
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IRFR3711TRPBF pVersion=0046&contRep=ZT&docId=E221C40AD4DECBF1A303005056AB0C4F&compId=irfr3711pbf.pdf?ci_sign=e542c345ad24298e236838b7358e141f237c1372
IRFR3711TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFR3411TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCFB187B1515EA&compId=IRFR3411TRPBF.pdf?ci_sign=11f0934eda20c38577d0642d48d0a25e8d51146b
IRFR3411TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFR3504ZTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCFE6C57FBD5EA&compId=IRFR3504ZTRPBF.pdf?ci_sign=2c657853350c22e49e47ff7c72379d04a5e64df2
IRFR3504ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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