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IHW30N65R5XKSA1 IHW30N65R5XKSA1 INFINEON TECHNOLOGIES IHW30N65R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 228ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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IKW30N65H5XKSA1 IKW30N65H5XKSA1 INFINEON TECHNOLOGIES ikw30n65h5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 31ns
Turn-off time: 209ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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IGP30N65F5XKSA1 IGP30N65F5XKSA1 INFINEON TECHNOLOGIES IGP30N65F5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 188W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: F5
Gate-emitter voltage: ±20V
Collector current: 55A
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IGW30N65L5XKSA1 IGW30N65L5XKSA1 INFINEON TECHNOLOGIES Infineon-IGW30N65L5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd55583ac9 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 44ns
Turn-off time: 359ns
Gate-emitter voltage: ±20V
Collector current: 62A
Pulsed collector current: 120A
Produkt ist nicht verfügbar
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IKP30N65F5XKSA1 IKP30N65F5XKSA1 INFINEON TECHNOLOGIES IKP30N65F5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 93W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 93W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 22ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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IPP020N08N5AKSA1 IPP020N08N5AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAF8298E0D611C&compId=IPP020N08N5-DTE.pdf?ci_sign=9dc82295fd02601e52b8b2d21a394a10450c2c86 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 375W
Drain-source voltage: 80V
Drain current: 120A
Case: PG-TO220-3
Kind of package: tube
auf Bestellung 34 Stücke:
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IPP034N08N5AKSA1 IPP034N08N5AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB1121F18CC11C&compId=IPP034N08N5-DTE.pdf?ci_sign=1dda73ae20d4521fd3f3e2996dc6f9936161321f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB024N08N5ATMA1 IPB024N08N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA8C0E6BD0011C&compId=IPB024N08N5-dte.pdf?ci_sign=49f9c54818950a9a239eac3f0159014c59fedaf1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.4mΩ
Power dissipation: 375W
Gate-source voltage: ±20V
Case: PG-TO263-3
Kind of channel: enhancement
Mounting: SMD
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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DD540N26K DD540N26K INFINEON TECHNOLOGIES DD540N2xK.pdf Category: Diode modules
Description: Module: diode; double series; 2.6kV; If: 540A; BG-PB60AT-1; screw
Case: BG-PB60AT-1
Max. forward voltage: 1.48V
Load current: 540A
Max. off-state voltage: 2.6kV
Max. forward impulse current: 16.5kA
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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S29GL256S10FHI020 INFINEON TECHNOLOGIES S29GL_128S_01GS_00.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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IRL7486MTRPBF INFINEON TECHNOLOGIES IRSD-S-A0001076320-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 209A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 209A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRF7749L2TRPBF IRF7749L2TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A98A20BC1FF1A303005056AB0C4F&compId=irf7749l2pbf.pdf?ci_sign=b464ed5cc7d209a4bc1050ee64b1542e1151909c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7759L2TRPBF IRF7759L2TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AA377C7252F1A303005056AB0C4F&compId=irf7759l2pbf.pdf?ci_sign=d4e941edcf85e33880fdc73e03ad22892cf18692 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 26A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 26A
Power dissipation: 125W
Case: DirectFET
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 200nC
Kind of channel: enhancement
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IRF6216TRPBF IRF6216TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F672CDB9B16F1A303005056AB0C4F&compId=irf6216pbf.pdf?ci_sign=9ad0f60fd0f5dd2bab877d7a145bd99db3800a4b Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: -150V
Drain current: -2.2A
Power dissipation: 2.5W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Kind of package: reel
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPF042N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPF042N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f49616ca62b7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 139A; Idm: 556A; 167W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 139A
Case: D2PAK-7
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 57nC
Power dissipation: 167W
Pulsed drain current: 556A
Technology: StrongIRFET™ 2
On-state resistance: 4.25mΩ
Produkt ist nicht verfügbar
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IRF7749L1TRPBF IRF7749L1TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC8D93D3E8D5EA&compId=IRF7749L1TRPBF.pdf?ci_sign=ac4cf3f56b24f673218007a1d83cc26fc9837f08 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 3.3W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 3.3W
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.1mΩ
Produkt ist nicht verfügbar
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IPT020N10N3ATMA1 IPT020N10N3ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBAED93866211C&compId=IPT020N10N3-DTE.pdf?ci_sign=7aae739c986093ff957dd2e9d4df66937580f02f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhancement
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TLE42712GATMA1 TLE42712GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698BB0584C64469&compId=TLE4271-2G.pdf?ci_sign=7a8f05af902fbc92a2cda1d4ba88edc4035a1995 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.55A; TO263-7; SMD
Case: TO263-7
Mounting: SMD
Kind of package: reel; tape
Output current: 0.55A
Output voltage: 5V
Voltage drop: 0.35V
Input voltage: 6...40V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...150°C
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IPD088N06N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD088N06N3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b2351db4d5c Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
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IPB031N08N5ATMA1 IPB031N08N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB151D4F9211C&compId=IPB031N08N5-DTE.pdf?ci_sign=3159f32d96288cc61656ed143c70a029107448c2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
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IPB036N12N3GATMA1 IPB036N12N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBD3543DCCA11C&compId=IPB036N12N3G-DTE.pdf?ci_sign=f6e85fe1d433fdb0362bcc3083d1806c0c8f5354 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 180A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 120V
Drain current: 180A
Power dissipation: 300W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB038N12N3GATMA1 IPB038N12N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBB68318E8811C&compId=IPB038N12N3G-DTE.pdf?ci_sign=1ce7670095e99e047c4caf194cc03ca588fb26fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 120V
Drain current: 120A
Power dissipation: 300W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPB031NE7N3GATMA1 IPB031NE7N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5DD52B98B211C&compId=IPB031NE7N3G-DTE.pdf?ci_sign=cdda49cb192f2d913b204bf3b9535fc7bc4e1788 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRFP4310ZPBFXKMA1 INFINEON TECHNOLOGIES Infineon_IRFP4310Z_DataSheet_v01_01_EN-3363303.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 134A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 134A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD122N10N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD122N10N3_G-DS-v02_03-en.pdf?fileId=db3a30432239cccd0122604a0b2e7f65 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2427 Stücke:
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53+1.37 EUR
63+1.15 EUR
68+1.06 EUR
73+0.98 EUR
81+0.89 EUR
100+0.84 EUR
200+0.79 EUR
500+0.73 EUR
1000+0.72 EUR
Mindestbestellmenge: 53
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BAT6302VH6327XTSA1 BAT6302VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E02D7CE8486469&compId=BAT6302VH6327XTSA1.pdf?ci_sign=37345c6b5c4c72fa5d20b81471d690570a6d7645 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 3V; 0.1A; 100mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.1W
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147+0.49 EUR
173+0.41 EUR
317+0.23 EUR
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ISC240P06LMATMA1 INFINEON TECHNOLOGIES Infineon-ISC240P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4b2c536ec Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 59A; Idm: 236A; 188W
Case: PG-TDSON-8
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Drain current: 59A
Drain-source voltage: 60V
Power dissipation: 188W
Pulsed drain current: 236A
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Produkt ist nicht verfügbar
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BSP135IXTSA1 INFINEON TECHNOLOGIES Infineon-BSP135I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a4188551361e Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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1000+0.2 EUR
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PVI5013RSPBF PVI5013RSPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE789CF03423360A745&compId=pvi5013r.pdf?ci_sign=2896a267ac238fb8d92b31fc582bd7c80dbfef82 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Manufacturer series: PVI5013RPbF
Turn-off time: 25µs
Turn-on time: 5ms
Number of channels: 2
Insulation voltage: 3.75kV
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IPB180N06S4H1ATMA2 INFINEON TECHNOLOGIES Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 250W
Case: PG-TO263-7-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
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IPD33CN10NGATMA1 INFINEON TECHNOLOGIES Infineon-IPP35CN10N-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42b457b44b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 108A; 58W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 108A
Power dissipation: 58W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhancement
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IRF250P224 IRF250P224 INFINEON TECHNOLOGIES IRF250P224.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 203nC
Kind of package: tube
Technology: StrongIRFET™
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ICE2HS01G ICE2HS01G INFINEON TECHNOLOGIES ICE2HS01G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 30kHz...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: SMPS
Operating voltage: 11...18V DC
Produkt ist nicht verfügbar
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TT400N26KOF TT400N26KOF INFINEON TECHNOLOGIES TT400N26KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.6kV; 400A; BG-PB60-1; screw
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: thyristor
Gate current: 250mA
Load current: 400A
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Max. off-state voltage: 2.6kV
Case: BG-PB60-1
Semiconductor structure: double series
Produkt ist nicht verfügbar
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BC847SH6327XTSA1 BC847SH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5E4F171F1C469&compId=BC847SH6327.pdf?ci_sign=9f0621617777e5af35a6ad272b9ffc3005813449 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 45V
Frequency: 250MHz
auf Bestellung 1526 Stücke:
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313+0.23 EUR
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715+0.1 EUR
807+0.089 EUR
926+0.077 EUR
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BCM856SH6327 BCM856SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5C1DE6A1A2469&compId=BCM856SH6327.pdf?ci_sign=8c374ff5ec8db9f2d76774cc1d853c230dde9778 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 65V
Frequency: 250MHz
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253+0.28 EUR
385+0.19 EUR
511+0.14 EUR
1000+0.13 EUR
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IR2128STRPBF INFINEON TECHNOLOGIES ir2127.pdf?fileId=5546d462533600a4015355c868861696 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
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ISA170230C04LMDSXTMA1 INFINEON TECHNOLOGIES ISA170230C04LMDSXTMA1.pdf Category: Multi channel transistors
Description: ISA170230C04LMDSXTMA1
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BSC022N04LS6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA80AD83367A3120C4&compId=BSC022N04LS6ATMA1.pdf?ci_sign=e2229754fae00c68648b3afc496feb6389ec8b62 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 79W
Case: PG-TDSON-8 FL
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
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S25FS512SDSBHM210 INFINEON TECHNOLOGIES Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S70FS01GSAGBHM210 INFINEON TECHNOLOGIES Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S70FS01GSDSBHM210 INFINEON TECHNOLOGIES Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 80MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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IPD650P06NMATMA1 INFINEON TECHNOLOGIES Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 22A; 83W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Drain-source voltage: 60V
Drain current: 22A
On-state resistance: 65mΩ
Power dissipation: 83W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: P
auf Bestellung 5000 Stücke:
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2500+0.8 EUR
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XMC4500F100F1024ACXQMA1 XMC4500F100F1024ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 160kB SRAM; 1MB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 26
Supply voltage: 3.3V DC
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Kind of core: 32-bit
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XMC4500F144F1024ACXQMA1 XMC4500F144F1024ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LQFP-144
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XMC4500F144K1024ACXQMA1 XMC4500F144K1024ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LQFP-144
Produkt ist nicht verfügbar
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XMC4504F144K512ACXQMA1 XMC4504F144K512ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,512kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Interface: EBI; GPIO; I2C; I2S; LIN; SPI; UART; USB
Case: PG-LQFP-144
Family: XMC4500
Produkt ist nicht verfügbar
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IRFSL3206PBF IRFSL3206PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C696F861C1F1A303005056AB0C4F&compId=irfs3206pbf.pdf?ci_sign=f600ccb40e2eaf3741d1c40e5d7debb5a1899fde Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262
Case: TO262
Mounting: THT
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRFSL4310ZPBF IRFSL4310ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B373B3D7CCF1A303005056AB0C4F&compId=irfb4310zpbf.pdf?ci_sign=c4ace11945af6befebfd380d4a1a0655b80c000d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUA170N10S5N031AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA170N10S5N031-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39952b0b32 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 519A; 197W
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 88nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 197W
Pulsed drain current: 519A
Drain current: 22A
Produkt ist nicht verfügbar
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IPW65R080CFDFKSA1 IPW65R080CFDFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBB3522BD531BF&compId=IPW65R080CFD-DTE.pdf?ci_sign=9425d7ac9df299ed19596fbda93012c2681a7a80 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43.3A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 43.3A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R080CFDA IPW65R080CFDA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58D403245ADE74A&compId=IPW65R080CFDA.pdf?ci_sign=3cc3370567a07f40c2f18445a503b992be7d8ae8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 27.4A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27.4A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB020N04NGATMA1 IPB020N04NGATMA1 INFINEON TECHNOLOGIES IPB020N04NG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; 167W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Power dissipation: 167W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPI032N06N3GAKSA1 IPI032N06N3GAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A69969DC48CDC11C&compId=IPI032N06N3G-DTE.pdf?ci_sign=0ed6764248a27474389bf554d52fca3a99220ba2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2ED21094S06JXUMA1 INFINEON TECHNOLOGIES Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 650V
Case: PG-DSO-14
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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BAS7002VH6327XTSA1 BAS7002VH6327XTSA1 INFINEON TECHNOLOGIES BAS7004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
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334+0.21 EUR
435+0.16 EUR
544+0.13 EUR
610+0.12 EUR
705+0.1 EUR
807+0.089 EUR
1000+0.083 EUR
Mindestbestellmenge: 334
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ITS428L2ATMA1 ITS428L2ATMA1 INFINEON TECHNOLOGIES ITS428L2.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.8A
Number of channels: 1
Mounting: SMD
Case: TO252-5
On-state resistance: 50mΩ
Supply voltage: 4.75...43V DC
Technology: Industrial PROFET
Kind of output: N-Channel
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28+2.6 EUR
37+1.94 EUR
41+1.76 EUR
100+1.64 EUR
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IRFB7540PBF IRFB7540PBF INFINEON TECHNOLOGIES IRFB7540PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
On-state resistance: 5.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 88nC
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35+2.07 EUR
70+1.03 EUR
84+0.85 EUR
98+0.73 EUR
105+0.69 EUR
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IRS2011STRPBF INFINEON TECHNOLOGIES INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1A; Ch: 2; Uin: 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Operating temperature: -40...125°C
Output current: 1A
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Lieferzeit 14-21 Tag (e)
2500+1.74 EUR
Mindestbestellmenge: 2500
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CY7C1071DV33-12BAXI INFINEON TECHNOLOGIES Infineon-CY7C1071DV33_32-Mbit_(2_M_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec32a933817&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 12ns; FBGA48; parallel
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA48
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SRAM
Access time: 12ns
Supply voltage: 3...3.6V DC
Memory organisation: 2Mx16bit
Memory: 32Mb SRAM
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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IHW30N65R5XKSA1 IHW30N65R5.pdf
IHW30N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 228ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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IKW30N65H5XKSA1 ikw30n65h5.pdf
IKW30N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 31ns
Turn-off time: 209ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 90A
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IGP30N65F5XKSA1 IGP30N65F5-DTE.pdf
IGP30N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 188W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: F5
Gate-emitter voltage: ±20V
Collector current: 55A
Produkt ist nicht verfügbar
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IGW30N65L5XKSA1 Infineon-IGW30N65L5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd55583ac9
IGW30N65L5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 44ns
Turn-off time: 359ns
Gate-emitter voltage: ±20V
Collector current: 62A
Pulsed collector current: 120A
Produkt ist nicht verfügbar
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IKP30N65F5XKSA1 IKP30N65F5.pdf
IKP30N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 93W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 93W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 22ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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IPP020N08N5AKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAF8298E0D611C&compId=IPP020N08N5-DTE.pdf?ci_sign=9dc82295fd02601e52b8b2d21a394a10450c2c86
IPP020N08N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 375W
Drain-source voltage: 80V
Drain current: 120A
Case: PG-TO220-3
Kind of package: tube
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.45 EUR
13+5.81 EUR
15+5.09 EUR
Mindestbestellmenge: 12
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IPP034N08N5AKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB1121F18CC11C&compId=IPP034N08N5-DTE.pdf?ci_sign=1dda73ae20d4521fd3f3e2996dc6f9936161321f
IPP034N08N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB024N08N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA8C0E6BD0011C&compId=IPB024N08N5-dte.pdf?ci_sign=49f9c54818950a9a239eac3f0159014c59fedaf1
IPB024N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.4mΩ
Power dissipation: 375W
Gate-source voltage: ±20V
Case: PG-TO263-3
Kind of channel: enhancement
Mounting: SMD
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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DD540N26K DD540N2xK.pdf
DD540N26K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.6kV; If: 540A; BG-PB60AT-1; screw
Case: BG-PB60AT-1
Max. forward voltage: 1.48V
Load current: 540A
Max. off-state voltage: 2.6kV
Max. forward impulse current: 16.5kA
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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S29GL256S10FHI020 S29GL_128S_01GS_00.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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IRL7486MTRPBF IRSD-S-A0001076320-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 209A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 209A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7749L2TRPBF pVersion=0046&contRep=ZT&docId=E221A98A20BC1FF1A303005056AB0C4F&compId=irf7749l2pbf.pdf?ci_sign=b464ed5cc7d209a4bc1050ee64b1542e1151909c
IRF7749L2TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7759L2TRPBF pVersion=0046&contRep=ZT&docId=E221AA377C7252F1A303005056AB0C4F&compId=irf7759l2pbf.pdf?ci_sign=d4e941edcf85e33880fdc73e03ad22892cf18692
IRF7759L2TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 26A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 26A
Power dissipation: 125W
Case: DirectFET
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 200nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF6216TRPBF pVersion=0046&contRep=ZT&docId=E21F672CDB9B16F1A303005056AB0C4F&compId=irf6216pbf.pdf?ci_sign=9ad0f60fd0f5dd2bab877d7a145bd99db3800a4b
IRF6216TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: -150V
Drain current: -2.2A
Power dissipation: 2.5W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Kind of package: reel
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPF042N10NF2SATMA1 Infineon-IPF042N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f49616ca62b7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 139A; Idm: 556A; 167W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 139A
Case: D2PAK-7
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 57nC
Power dissipation: 167W
Pulsed drain current: 556A
Technology: StrongIRFET™ 2
On-state resistance: 4.25mΩ
Produkt ist nicht verfügbar
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IRF7749L1TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC8D93D3E8D5EA&compId=IRF7749L1TRPBF.pdf?ci_sign=ac4cf3f56b24f673218007a1d83cc26fc9837f08
IRF7749L1TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 3.3W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 3.3W
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.1mΩ
Produkt ist nicht verfügbar
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IPT020N10N3ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBAED93866211C&compId=IPT020N10N3-DTE.pdf?ci_sign=7aae739c986093ff957dd2e9d4df66937580f02f
IPT020N10N3ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE42712GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698BB0584C64469&compId=TLE4271-2G.pdf?ci_sign=7a8f05af902fbc92a2cda1d4ba88edc4035a1995
TLE42712GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.55A; TO263-7; SMD
Case: TO263-7
Mounting: SMD
Kind of package: reel; tape
Output current: 0.55A
Output voltage: 5V
Voltage drop: 0.35V
Input voltage: 6...40V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...150°C
auf Bestellung 931 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.99 EUR
33+2.2 EUR
34+2.12 EUR
Mindestbestellmenge: 24
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IPD088N06N3GATMA1 Infineon-IPD088N06N3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b2351db4d5c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.51 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPB031N08N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB151D4F9211C&compId=IPB031N08N5-DTE.pdf?ci_sign=3159f32d96288cc61656ed143c70a029107448c2
IPB031N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB036N12N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBD3543DCCA11C&compId=IPB036N12N3G-DTE.pdf?ci_sign=f6e85fe1d433fdb0362bcc3083d1806c0c8f5354
IPB036N12N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 180A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 120V
Drain current: 180A
Power dissipation: 300W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB038N12N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBB68318E8811C&compId=IPB038N12N3G-DTE.pdf?ci_sign=1ce7670095e99e047c4caf194cc03ca588fb26fa
IPB038N12N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 120V
Drain current: 120A
Power dissipation: 300W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPB031NE7N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5DD52B98B211C&compId=IPB031NE7N3G-DTE.pdf?ci_sign=cdda49cb192f2d913b204bf3b9535fc7bc4e1788
IPB031NE7N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRFP4310ZPBFXKMA1 Infineon_IRFP4310Z_DataSheet_v01_01_EN-3363303.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 134A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 134A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD122N10N3GATMA1 Infineon-IPD122N10N3_G-DS-v02_03-en.pdf?fileId=db3a30432239cccd0122604a0b2e7f65
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2427 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.37 EUR
63+1.15 EUR
68+1.06 EUR
73+0.98 EUR
81+0.89 EUR
100+0.84 EUR
200+0.79 EUR
500+0.73 EUR
1000+0.72 EUR
Mindestbestellmenge: 53
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BAT6302VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E02D7CE8486469&compId=BAT6302VH6327XTSA1.pdf?ci_sign=37345c6b5c4c72fa5d20b81471d690570a6d7645
BAT6302VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 3V; 0.1A; 100mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.1W
auf Bestellung 410 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
147+0.49 EUR
173+0.41 EUR
317+0.23 EUR
Mindestbestellmenge: 117
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ISC240P06LMATMA1 Infineon-ISC240P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4b2c536ec
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 59A; Idm: 236A; 188W
Case: PG-TDSON-8
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Drain current: 59A
Drain-source voltage: 60V
Power dissipation: 188W
Pulsed drain current: 236A
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Produkt ist nicht verfügbar
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BSP135IXTSA1 Infineon-BSP135I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a4188551361e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.2 EUR
Mindestbestellmenge: 1000
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PVI5013RSPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE789CF03423360A745&compId=pvi5013r.pdf?ci_sign=2896a267ac238fb8d92b31fc582bd7c80dbfef82
PVI5013RSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Manufacturer series: PVI5013RPbF
Turn-off time: 25µs
Turn-on time: 5ms
Number of channels: 2
Insulation voltage: 3.75kV
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
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IPB180N06S4H1ATMA2 Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 250W
Case: PG-TO263-7-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Produkt ist nicht verfügbar
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IPD33CN10NGATMA1 Infineon-IPP35CN10N-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42b457b44b1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 108A; 58W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 108A
Power dissipation: 58W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF250P224 IRF250P224.pdf
IRF250P224
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 203nC
Kind of package: tube
Technology: StrongIRFET™
Produkt ist nicht verfügbar
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ICE2HS01G ICE2HS01G.pdf
ICE2HS01G
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 30kHz...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: SMPS
Operating voltage: 11...18V DC
Produkt ist nicht verfügbar
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TT400N26KOF TT400N26KOF.pdf
TT400N26KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.6kV; 400A; BG-PB60-1; screw
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: thyristor
Gate current: 250mA
Load current: 400A
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Max. off-state voltage: 2.6kV
Case: BG-PB60-1
Semiconductor structure: double series
Produkt ist nicht verfügbar
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BC847SH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5E4F171F1C469&compId=BC847SH6327.pdf?ci_sign=9f0621617777e5af35a6ad272b9ffc3005813449
BC847SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 45V
Frequency: 250MHz
auf Bestellung 1526 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
544+0.13 EUR
715+0.1 EUR
807+0.089 EUR
926+0.077 EUR
Mindestbestellmenge: 313
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BCM856SH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5C1DE6A1A2469&compId=BCM856SH6327.pdf?ci_sign=8c374ff5ec8db9f2d76774cc1d853c230dde9778
BCM856SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 65V
Frequency: 250MHz
auf Bestellung 1715 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
253+0.28 EUR
385+0.19 EUR
511+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 193
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IR2128STRPBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.76 EUR
Mindestbestellmenge: 2500
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ISA170230C04LMDSXTMA1 ISA170230C04LMDSXTMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: ISA170230C04LMDSXTMA1
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.59 EUR
Mindestbestellmenge: 4000
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BSC022N04LS6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA80AD83367A3120C4&compId=BSC022N04LS6ATMA1.pdf?ci_sign=e2229754fae00c68648b3afc496feb6389ec8b62
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 79W
Case: PG-TDSON-8 FL
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
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S25FS512SDSBHM210 Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S70FS01GSAGBHM210 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S70FS01GSDSBHM210 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 80MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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IPD650P06NMATMA1 Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 22A; 83W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Drain-source voltage: 60V
Drain current: 22A
On-state resistance: 65mΩ
Power dissipation: 83W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: P
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.8 EUR
Mindestbestellmenge: 2500
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XMC4500F100F1024ACXQMA1 XMC4500-DTE.pdf
XMC4500F100F1024ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 160kB SRAM; 1MB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 26
Supply voltage: 3.3V DC
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Kind of core: 32-bit
Produkt ist nicht verfügbar
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XMC4500F144F1024ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500F144F1024ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LQFP-144
Produkt ist nicht verfügbar
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XMC4500F144K1024ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500F144K1024ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LQFP-144
Produkt ist nicht verfügbar
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XMC4504F144K512ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4504F144K512ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,512kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Interface: EBI; GPIO; I2C; I2S; LIN; SPI; UART; USB
Case: PG-LQFP-144
Family: XMC4500
Produkt ist nicht verfügbar
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IRFSL3206PBF pVersion=0046&contRep=ZT&docId=E221C696F861C1F1A303005056AB0C4F&compId=irfs3206pbf.pdf?ci_sign=f600ccb40e2eaf3741d1c40e5d7debb5a1899fde
IRFSL3206PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262
Case: TO262
Mounting: THT
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFSL4310ZPBF pVersion=0046&contRep=ZT&docId=E221B373B3D7CCF1A303005056AB0C4F&compId=irfb4310zpbf.pdf?ci_sign=c4ace11945af6befebfd380d4a1a0655b80c000d
IRFSL4310ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUA170N10S5N031AUMA1 Infineon-IAUA170N10S5N031-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39952b0b32
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 519A; 197W
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 88nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 197W
Pulsed drain current: 519A
Drain current: 22A
Produkt ist nicht verfügbar
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IPW65R080CFDFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBB3522BD531BF&compId=IPW65R080CFD-DTE.pdf?ci_sign=9425d7ac9df299ed19596fbda93012c2681a7a80
IPW65R080CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43.3A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 43.3A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R080CFDA pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58D403245ADE74A&compId=IPW65R080CFDA.pdf?ci_sign=3cc3370567a07f40c2f18445a503b992be7d8ae8
IPW65R080CFDA
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 27.4A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27.4A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB020N04NGATMA1 IPB020N04NG-DTE.pdf
IPB020N04NGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; 167W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Power dissipation: 167W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPI032N06N3GAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A69969DC48CDC11C&compId=IPI032N06N3G-DTE.pdf?ci_sign=0ed6764248a27474389bf554d52fca3a99220ba2
IPI032N06N3GAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2ED21094S06JXUMA1 Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 650V
Case: PG-DSO-14
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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BAS7002VH6327XTSA1 BAS7004E6327HTSA1.pdf
BAS7002VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 1916 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
435+0.16 EUR
544+0.13 EUR
610+0.12 EUR
705+0.1 EUR
807+0.089 EUR
1000+0.083 EUR
Mindestbestellmenge: 334
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ITS428L2ATMA1 ITS428L2.pdf
ITS428L2ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.8A
Number of channels: 1
Mounting: SMD
Case: TO252-5
On-state resistance: 50mΩ
Supply voltage: 4.75...43V DC
Technology: Industrial PROFET
Kind of output: N-Channel
auf Bestellung 1772 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.6 EUR
37+1.94 EUR
41+1.76 EUR
100+1.64 EUR
Mindestbestellmenge: 28
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IRFB7540PBF IRFB7540PBF.pdf
IRFB7540PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
On-state resistance: 5.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 88nC
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
70+1.03 EUR
84+0.85 EUR
98+0.73 EUR
105+0.69 EUR
Mindestbestellmenge: 35
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IRS2011STRPBF INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1A; Ch: 2; Uin: 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Operating temperature: -40...125°C
Output current: 1A
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.74 EUR
Mindestbestellmenge: 2500
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CY7C1071DV33-12BAXI Infineon-CY7C1071DV33_32-Mbit_(2_M_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec32a933817&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 12ns; FBGA48; parallel
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA48
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SRAM
Access time: 12ns
Supply voltage: 3...3.6V DC
Memory organisation: 2Mx16bit
Memory: 32Mb SRAM
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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