Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (151648) > Seite 2490 nach 2528

Wählen Sie Seite:   [  << Vorherige Seite ]  1 252 504 756 1008 1260 1512 1764 2016 2268 2485 2486 2487 2488 2489 2490 2491 2492 2493 2494 2495 2520 2528  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IPA045N10N3GXKSA1 IPA045N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA4AC450E1A11C&compId=IPA045N10N3G-DTE.pdf?ci_sign=cacdf50fb45e686d4ac5b40c07270232aecea7b0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI045N10N3GXKSA1 IPI045N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAF2573C60011C&compId=IPI045N10N3G-DTE.pdf?ci_sign=b4e4845dad6a9df60a38fee76a77a3ad8eb67e42 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP045N10N3GXKSA1 IPP045N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB96DF37F3411C&compId=IPP045N10N3G-DTE.pdf?ci_sign=ea6e6be4aa0c58f3890b4faaf475c4c11acc98f2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.39 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IRF7319TRPBF IRF7319TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219E4670C7E3F1A303005056AB0C4F&compId=irf7319pbf.pdf?ci_sign=930d6cef5388477ac5f751b53c8900a39bc7c132 description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.5/-4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD031N06L3GATMA1 IPD031N06L3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAAC938B42011C&compId=IPD031N06L3G-DTE.pdf?ci_sign=956ec9d4fd9e72f0920c828b3865ef21092a25df Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 929 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.56 EUR
31+2.32 EUR
38+1.9 EUR
40+1.8 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRS20957STRPBF IRS20957STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE991C5A14E315F78BF&compId=IRS20957S.pdf?ci_sign=22bf15a378893f041d4941ea0b4aa473f9108955 Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
auf Bestellung 1355 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.49 EUR
27+2.72 EUR
28+2.6 EUR
29+2.55 EUR
50+2.5 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IRF2907ZPBF IRF2907ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5FD2406001F1A303005056AB0C4F&compId=irf2907zpbf.pdf?ci_sign=d9930ff1f83e629ad9856e6d356b20e0d58e4614 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 330W
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRFS3207TRLPBF IRFS3207TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C6B370EE5BF1A303005056AB0C4F&compId=irfs3207pbf.pdf?ci_sign=9d5c11df231dd7c9061d11989f17acc39f514a7b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 180A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 180A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4010TRLPBF IRFS4010TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE790BD2687D720A745&compId=IRFS4010TRLPBF.pdf?ci_sign=496ea67e3c29131ec26750b00389f7c763cf8c45 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 143nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP110N20N3GXKSA1 IPP110N20N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC867EB270211C&compId=IPP110N20N3G-DTE.pdf?ci_sign=431a306c7efcf431ff4c7879912e470f4ddd5a21 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.35 EUR
11+6.52 EUR
12+6.18 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
BCR162E6327 BCR162E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C58689C0D2E469&compId=BCR162.pdf?ci_sign=6c9bbf739143f7a57c3e9cac63723791f738730e Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 4.7kΩ
Base resistor: 4.7kΩ
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.58 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
BCR166E6327 BCR166E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5836521750469&compId=BCR166.pdf?ci_sign=3fa9723f756af0d24d4a7bd47786e2a7dde80b4b Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 4.7kΩ
Frequency: 160MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 1357 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
264+0.27 EUR
342+0.21 EUR
439+0.16 EUR
599+0.12 EUR
1357+0.053 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
IPP032N06N3GXKSA1 IPP032N06N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E98A6C6030411C&compId=IPP032N06N3G-DTE.pdf?ci_sign=34183e67dc90345bcb6807fa4748e12435f87288 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO220-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: PG-TO220-3
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.1 EUR
33+2.23 EUR
66+1.09 EUR
70+1.03 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4227PBF IRFP4227PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACB1AF1A6F5005056AB5A8F&compId=irfp4227pbf.pdf?ci_sign=865a681e1ae387ed345fa57ca87cba44063b82e6 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 330W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3710PBF IRFP3710PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACB05F1A6F5005056AB5A8F&compId=irfp3710.pdf?ci_sign=0d505afbb98c91b5b4639168accbe9a1a6198538 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 180W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 66.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 254 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.82 EUR
28+2.56 EUR
30+2.42 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
DZ1070N18K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 1.8kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFU120NPBF IRFU120NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E77534B73F1A6F5005056AB5A8F&compId=irfr120n.pdf?ci_sign=d29e3fc0b3033ac4ff84bc1b06afd32fd73263e0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; IPAK
Case: IPAK
Drain-source voltage: 100V
Drain current: 9.1A
On-state resistance: 0.21Ω
Type of transistor: N-MOSFET
Power dissipation: 39W
Polarisation: unipolar
Gate charge: 16.7nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 2895 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.32 EUR
104+0.69 EUR
122+0.59 EUR
129+0.56 EUR
525+0.54 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IRF7316TRPBF IRF7316TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219E0768620AF1A303005056AB0C4F&compId=irf7316pbf.pdf?ci_sign=f3ac06c6dfbd1b2e65f97e10a01cbbc54ab17c25 description Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 5319 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.66 EUR
62+1.16 EUR
72+1 EUR
152+0.47 EUR
161+0.45 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7316QTR AUIRF7316QTR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D742CF1A6F5005056AB5A8F&compId=auirf7316q.pdf?ci_sign=af9bd21a38321e4c969ec22e73714e95cc759dd5 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 98mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 23nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRG4PH20KDPBF IRG4PH20KDPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221D5D15F7C3FF1A303005056AB0C4F&compId=irg4ph20kdpbf.pdf?ci_sign=73cf103f6ec1f50e5465b4ed37507bf31c4bf8af Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 11A
Power dissipation: 60W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRG4PH20KPBF IRG4PH20KPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221D5FD1DFF0CF1A303005056AB0C4F&compId=irg4ph20kpbf.pdf?ci_sign=515381e4ecec53aef55eff32a285367c089bb78d Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 11A
Power dissipation: 60W
Case: TO247-3
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS31N20DTRLP IRFS31N20DTRLP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B2D2486825F1A303005056AB0C4F&compId=irfb31n20dpbf.pdf?ci_sign=ed3075155006186cadb71ae9521f3327718e6583 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8726TRPBF IRLR8726TRPBF INFINEON TECHNOLOGIES irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 5.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 61A
Power dissipation: 75W
Pulsed drain current: 340A
auf Bestellung 681 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
168+0.43 EUR
191+0.38 EUR
242+0.3 EUR
256+0.28 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8743TRPBF IRLR8743TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2228120F8A1E7F1A303005056AB0C4F&compId=irlr8743pbf.pdf?ci_sign=13caac950d62003a7670c9a3bc787dc6b4dae60e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+1.04 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ24NPBF IRFZ24NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E7D5055A2F1A6F5005056AB5A8F&compId=irfz24n.pdf?ci_sign=035e258bd6fdc5de7520892f865a0f577cbf21f3 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE2QR2280ZXKLA1
+1
 		ICE2QR2280ZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9CA1DEB7370760C7&compId=ICE2QR2280Z.pdf?ci_sign=0afed20d41bae5cd14e264b6ccdd85b7a6c8c567 Category: A/D converters - integrated circuits
Description: IC: PMIC; PWM controller; Ch: 1; DIP7; 10.5÷25VDC; SMPS; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Frequency: 39...65kHz
Operating voltage: 10.5...25V DC
Application: SMPS
Breakdown voltage: 800V
Input voltage: 85...265V
Topology: flyback
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2110PBF IR2110PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD33EFF1A6F5005056AB5A8F&compId=ir2110_2113.pdf?ci_sign=c9154912c319d9857d6c998c98ec5f1a92c658ee Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-off time: 111ns
Turn-on time: 145ns
Power: 1.6W
auf Bestellung 728 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.76 EUR
22+3.39 EUR
30+2.42 EUR
32+2.29 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IR2110SPBF IR2110SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD33EFF1A6F5005056AB5A8F&compId=ir2110_2113.pdf?ci_sign=c9154912c319d9857d6c998c98ec5f1a92c658ee description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-off time: 111ns
Turn-on time: 145ns
Power: 1.25W
auf Bestellung 436 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.53 EUR
35+2.1 EUR
36+1.99 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IR2110STRPBF IR2110STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBFF28572095EA&compId=IR2110STRPBF.pdf?ci_sign=df9d8034c817d5f92fb697b53c8f2c84160d7ab0 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 500V
Turn-off time: 111ns
Turn-on time: 145ns
Power: 1.25W
auf Bestellung 765 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.47 EUR
36+1.99 EUR
39+1.87 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IHW20N135R5XKSA1 IHW20N135R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC621B74C57820&compId=IHW20N135R5.pdf?ci_sign=3482e7577980c28fddc8870bc3e93fab375fa327 Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.55 EUR
33+2.2 EUR
35+2.09 EUR
60+2.04 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
1EDN7512BXTSA1 1EDN7512BXTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA6801DE546FA40D3&compId=1EDN751x_1EDN851x.pdf?ci_sign=f7b6a61fa03f50b5c2e4aa8ce8e4947eacc724c2 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-SOT23-5
Output current: -8...4A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
auf Bestellung 2285 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
100+0.72 EUR
116+0.62 EUR
122+0.59 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
IRLML0040TRPBF IRLML0040TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227B695F4D11F1A303005056AB0C4F&compId=irlml0040pbf.pdf?ci_sign=5d1842c3e30491551ce56d3423793e0f8c415056 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 57697 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
256+0.28 EUR
382+0.19 EUR
447+0.16 EUR
863+0.083 EUR
910+0.079 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
IRLML0100TRPBF IRLML0100TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F5825E0F1A6F5005056AB5A8F&compId=irlml0100pbf.pdf?ci_sign=bdf83814bed85f72f3cd88c4059bcf2266d07f53 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 6559 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
215+0.33 EUR
293+0.24 EUR
334+0.21 EUR
658+0.11 EUR
695+0.1 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
IRLML6244TRPBF IRLML6244TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227BEF25F70EF1A303005056AB0C4F&compId=irlml6244pbf.pdf?ci_sign=9e9a5be7e3521f0951b398d6655e0c43901db19e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 8.9nC
On-state resistance: 21mΩ
Gate-source voltage: ±12V
auf Bestellung 10213 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
221+0.32 EUR
280+0.26 EUR
400+0.18 EUR
516+0.14 EUR
589+0.12 EUR
878+0.082 EUR
926+0.077 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
IRLML6246TRPBF IRLML6246TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227C073DE4D1F1A303005056AB0C4F&compId=irlml6246pbf.pdf?ci_sign=081a27482ca02397f5d07cd5b22cc57d56db8087 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 3.5nC
On-state resistance: 46mΩ
Gate-source voltage: ±12V
auf Bestellung 5056 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
313+0.23 EUR
453+0.16 EUR
523+0.14 EUR
933+0.077 EUR
987+0.073 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
IRLML6346TRPBF IRLML6346TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227C53954049F1A303005056AB0C4F&compId=irlml6346pbf.pdf?ci_sign=f015b0982e28988fc6ffca7b5cd078a776e1cb3e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 17A; 0.8W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.8W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 2.9nC
On-state resistance: 80mΩ
Gate-source voltage: ±12V
Pulsed drain current: 17A
auf Bestellung 10354 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
265+0.27 EUR
323+0.22 EUR
417+0.17 EUR
500+0.14 EUR
658+0.11 EUR
705+0.1 EUR
1000+0.099 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
BC848BE6327HTSA1 BC848BE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)
1060+0.069 EUR
1180+0.062 EUR
1400+0.051 EUR
1480+0.048 EUR
Mindestbestellmenge: 1060
Im Einkaufswagen  Stück im Wert von  UAH
IRLR2908TRPBF IRLR2908TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227E975B7441F1A303005056AB0C4F&compId=irlr2908pbf.pdf?ci_sign=275f9ac53c05c9fd8c3c2f0f94cbd4958816eab3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 39A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 39A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2003STRPBF IRS2003STRPBF INFINEON TECHNOLOGIES irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 750ns
Turn-off time: 180ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2005STRPBF IRS2005STRPBF INFINEON TECHNOLOGIES irs2005s.pdf?fileId=5546d462533600a4015364c4246229e1 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 160ns
Turn-off time: 150ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2007SPBF IRS2007SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE991DE094AADB658BF&compId=IRS2007SPBF.pdf?ci_sign=23f41c499e549f21ad84d82168dfac72ba4d0a9a Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 160ns
Turn-off time: 150ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2008SPBF IRS2008SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE989A63D80180FB8BF&compId=IRS2008S.pdf?ci_sign=519175befe37f294a90d6c6f0b0c696fd6b6a464 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 750ns
Turn-off time: 180ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2011PBF IRS2011PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E26C2F1A6F5005056AB5A8F&compId=irs2011pbf.pdf?ci_sign=8b98cbb48fac23b5d243658ba2d04bebde43ddae description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Mounting: THT
Supply voltage: 10...20V DC
Number of channels: 2
Case: DIP8
Kind of package: tube
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 1W
Turn-on time: 85ns
Turn-off time: 75ns
Output current: -1...1A
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2093MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DAA4BA9F0B553D7&compId=IRS2093MTRPBF.pdf?ci_sign=e52fc9498b4cbd2fd8fae90e4df59b8441159497 Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 4
Amplifier class: D
Case: MLPQ48
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7343TRPBF IRF7343TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A084E32E22F1A303005056AB0C4F&compId=irf7343pbf.pdf?ci_sign=67f4a0e09b642d9ef37643bc443a2be3f815f7f4 description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/105mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 7126 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.57 EUR
58+1.25 EUR
69+1.05 EUR
175+0.41 EUR
186+0.39 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7343QTR AUIRF7343QTR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D7456F1A6F5005056AB5A8F&compId=auirf7343q.pdf?ci_sign=5951c580d1ae312f0ff808d6dd1ff22fd4d1e9c4 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 4.7W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 4.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43/95mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7342TRPBF IRF7342TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A06CFD47F4F1A303005056AB0C4F&compId=irf7342pbf.pdf?ci_sign=5924d7d1d4a809afdcc49f81c65ec7a6300718f9 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 9414 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.7 EUR
64+1.13 EUR
73+0.99 EUR
160+0.45 EUR
169+0.42 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7342QTR AUIRF7342QTR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D7448F1A6F5005056AB5A8F&compId=auirf7342q.pdf?ci_sign=97ff50904365263a4dbd19246af4cbb382583c69 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Gate charge: 26nC
On-state resistance: 0.17Ω
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGU04N60TAKMA1 IGU04N60TAKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB911564631820&compId=IGU04N60T.pdf?ci_sign=79c5db7457acfb90f2cffa20ce08bfdc7e4fa5bb Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO251
Type of transistor: IGBT
Power dissipation: 42W
Case: TO251
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Turn-on time: 21ns
Turn-off time: 207ns
Collector current: 4A
Pulsed collector current: 12A
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
66+1.09 EUR
92+0.78 EUR
97+0.74 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IKD04N60RATMA1 IKD04N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDA3E2ACF23820&compId=IKD04N60R.pdf?ci_sign=6efd6340cc350b45c24c45eb5a27009029527dee Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ RC
Turn-on time: 22ns
Turn-off time: 317ns
Collector current: 4A
Pulsed collector current: 12A
auf Bestellung 2479 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.74 EUR
65+1.1 EUR
121+0.59 EUR
128+0.56 EUR
1000+0.54 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
IKP04N60TXKSA1 IKP04N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE22916DB05820&compId=IKP04N60T.pdf?ci_sign=79887e35e97dee3f47a5ed0ea9755ace78373099 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO220-3
Type of transistor: IGBT
Power dissipation: 42W
Case: TO220-3
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Turn-on time: 21ns
Turn-off time: 207ns
Collector current: 4A
Pulsed collector current: 12A
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.93 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3110ZTRPBF IRLR3110ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227EF45E9F51F1A303005056AB0C4F&compId=irlr3110zpbf.pdf?ci_sign=64c51a4fa3a43285754294102b2ac04ad31b2f21 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 588 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.03 EUR
49+1.47 EUR
66+1.09 EUR
70+1.03 EUR
500+1.02 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
BAS12504WH6327XTSA1 BAS12504WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF13B870A32469&compId=BAS125-0xW.pdf?ci_sign=f5f44dc4e7ac8e846a5816e0f88ba496aa18aa00 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 0.1A
Max. forward impulse current: 0.5A
Max. off-state voltage: 25V
Semiconductor structure: double series
Type of diode: Schottky switching
auf Bestellung 2765 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
82+0.87 EUR
94+0.77 EUR
135+0.53 EUR
223+0.32 EUR
236+0.3 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
TLE49462KHTSA1 TLE49462KHTSA1 INFINEON TECHNOLOGIES TLE4946-2K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc925c48637f Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Case: SC59
Range of detectable magnetic field: -3.5...3.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
Kind of sensor: latch
auf Bestellung 2608 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.2 EUR
82+0.88 EUR
131+0.55 EUR
139+0.52 EUR
1000+0.5 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
IGB15N60TATMA1 IGB15N60TATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B31032C72A4FA8&compId=IGB15N60T-DTE.pdf?ci_sign=c8a1ee71983920d8fe021504e43002c04a833b4b Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK
Type of transistor: IGBT
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 882 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.29 EUR
37+1.96 EUR
41+1.77 EUR
50+1.43 EUR
53+1.36 EUR
100+1.3 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IGW75N60H3FKSA1 IGW75N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B381D15C556FA8&compId=IGW75N60H3-DTE.pdf?ci_sign=7a4792dde8410ac51a750f89e8d3fcf950b62f74 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 75A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW75N60TFKSA1 IGW75N60TFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B382A1450FCFA8&compId=IGW75N60T-DTE.pdf?ci_sign=e3398a93286a8c04f59275ea1e9fc67ac59b1506 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 75A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.74 EUR
15+4.93 EUR
16+4.66 EUR
30+4.49 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKA15N60TXKSA1 IKA15N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD1E877C847820&compId=IKA15N60T.pdf?ci_sign=ce907b1e3bd538123e3a5020ae0c7b1b51be7942 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10.6A; 35.7W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 35.7W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector current: 10.6A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 28ns
Turn-off time: 238ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB15N60TATMA1 IKB15N60TATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD41F72CB29820&compId=IKB15N60T.pdf?ci_sign=9b743b6df9c5530ebc7f8eee8c1770ec9a429f91 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: SMD
Kind of package: reel; tape
Technology: TRENCHSTOP™
Turn-on time: 28ns
Gate charge: 87nC
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Power dissipation: 130W
Collector-emitter voltage: 600V
Case: D2PAK
auf Bestellung 812 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.13 EUR
27+2.66 EUR
28+2.62 EUR
30+2.39 EUR
31+2.37 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IKD15N60RATMA1 IKD15N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDF1E34C9ED820&compId=IKD15N60R.pdf?ci_sign=edf8c9498bddcc0bab7c28dab797b14b4d8a5a23 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 319ns
auf Bestellung 1956 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.56 EUR
36+2.03 EUR
41+1.77 EUR
47+1.54 EUR
50+1.46 EUR
52+1.4 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IPA045N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA4AC450E1A11C&compId=IPA045N10N3G-DTE.pdf?ci_sign=cacdf50fb45e686d4ac5b40c07270232aecea7b0
IPA045N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI045N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAF2573C60011C&compId=IPI045N10N3G-DTE.pdf?ci_sign=b4e4845dad6a9df60a38fee76a77a3ad8eb67e42
IPI045N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP045N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB96DF37F3411C&compId=IPP045N10N3G-DTE.pdf?ci_sign=ea6e6be4aa0c58f3890b4faaf475c4c11acc98f2
IPP045N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.39 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IRF7319TRPBF description pVersion=0046&contRep=ZT&docId=E2219E4670C7E3F1A303005056AB0C4F&compId=irf7319pbf.pdf?ci_sign=930d6cef5388477ac5f751b53c8900a39bc7c132
IRF7319TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.5/-4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD031N06L3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAAC938B42011C&compId=IPD031N06L3G-DTE.pdf?ci_sign=956ec9d4fd9e72f0920c828b3865ef21092a25df
IPD031N06L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 929 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
31+2.32 EUR
38+1.9 EUR
40+1.8 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRS20957STRPBF pVersion=0046&contRep=ZT&docId=005056AB82531EE991C5A14E315F78BF&compId=IRS20957S.pdf?ci_sign=22bf15a378893f041d4941ea0b4aa473f9108955
IRS20957STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
auf Bestellung 1355 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.49 EUR
27+2.72 EUR
28+2.6 EUR
29+2.55 EUR
50+2.5 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IRF2907ZPBF pVersion=0046&contRep=ZT&docId=E21F5FD2406001F1A303005056AB0C4F&compId=irf2907zpbf.pdf?ci_sign=d9930ff1f83e629ad9856e6d356b20e0d58e4614
IRF2907ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 330W
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRFS3207TRLPBF pVersion=0046&contRep=ZT&docId=E221C6B370EE5BF1A303005056AB0C4F&compId=irfs3207pbf.pdf?ci_sign=9d5c11df231dd7c9061d11989f17acc39f514a7b
IRFS3207TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 180A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 180A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4010TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE790BD2687D720A745&compId=IRFS4010TRLPBF.pdf?ci_sign=496ea67e3c29131ec26750b00389f7c763cf8c45
IRFS4010TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 143nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP110N20N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC867EB270211C&compId=IPP110N20N3G-DTE.pdf?ci_sign=431a306c7efcf431ff4c7879912e470f4ddd5a21
IPP110N20N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.35 EUR
11+6.52 EUR
12+6.18 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
BCR162E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C58689C0D2E469&compId=BCR162.pdf?ci_sign=6c9bbf739143f7a57c3e9cac63723791f738730e
BCR162E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 4.7kΩ
Base resistor: 4.7kΩ
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
BCR166E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5836521750469&compId=BCR166.pdf?ci_sign=3fa9723f756af0d24d4a7bd47786e2a7dde80b4b
BCR166E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 4.7kΩ
Frequency: 160MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 1357 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
264+0.27 EUR
342+0.21 EUR
439+0.16 EUR
599+0.12 EUR
1357+0.053 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
IPP032N06N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E98A6C6030411C&compId=IPP032N06N3G-DTE.pdf?ci_sign=34183e67dc90345bcb6807fa4748e12435f87288
IPP032N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO220-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: PG-TO220-3
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.1 EUR
33+2.23 EUR
66+1.09 EUR
70+1.03 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4227PBF description pVersion=0046&contRep=ZT&docId=E1C04E653ACB1AF1A6F5005056AB5A8F&compId=irfp4227pbf.pdf?ci_sign=865a681e1ae387ed345fa57ca87cba44063b82e6
IRFP4227PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 330W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3710PBF pVersion=0046&contRep=ZT&docId=E1C04E653ACB05F1A6F5005056AB5A8F&compId=irfp3710.pdf?ci_sign=0d505afbb98c91b5b4639168accbe9a1a6198538
IRFP3710PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 180W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 66.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 254 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.82 EUR
28+2.56 EUR
30+2.42 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
DZ1070N18K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 1.8kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFU120NPBF pVersion=0046&contRep=ZT&docId=E1C04E77534B73F1A6F5005056AB5A8F&compId=irfr120n.pdf?ci_sign=d29e3fc0b3033ac4ff84bc1b06afd32fd73263e0
IRFU120NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; IPAK
Case: IPAK
Drain-source voltage: 100V
Drain current: 9.1A
On-state resistance: 0.21Ω
Type of transistor: N-MOSFET
Power dissipation: 39W
Polarisation: unipolar
Gate charge: 16.7nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 2895 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
104+0.69 EUR
122+0.59 EUR
129+0.56 EUR
525+0.54 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IRF7316TRPBF description pVersion=0046&contRep=ZT&docId=E2219E0768620AF1A303005056AB0C4F&compId=irf7316pbf.pdf?ci_sign=f3ac06c6dfbd1b2e65f97e10a01cbbc54ab17c25
IRF7316TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 5319 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
62+1.16 EUR
72+1 EUR
152+0.47 EUR
161+0.45 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7316QTR pVersion=0046&contRep=ZT&docId=E1C0458E4D742CF1A6F5005056AB5A8F&compId=auirf7316q.pdf?ci_sign=af9bd21a38321e4c969ec22e73714e95cc759dd5
AUIRF7316QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 98mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 23nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRG4PH20KDPBF pVersion=0046&contRep=ZT&docId=E221D5D15F7C3FF1A303005056AB0C4F&compId=irg4ph20kdpbf.pdf?ci_sign=73cf103f6ec1f50e5465b4ed37507bf31c4bf8af
IRG4PH20KDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 11A
Power dissipation: 60W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRG4PH20KPBF pVersion=0046&contRep=ZT&docId=E221D5FD1DFF0CF1A303005056AB0C4F&compId=irg4ph20kpbf.pdf?ci_sign=515381e4ecec53aef55eff32a285367c089bb78d
IRG4PH20KPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 11A
Power dissipation: 60W
Case: TO247-3
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS31N20DTRLP pVersion=0046&contRep=ZT&docId=E221B2D2486825F1A303005056AB0C4F&compId=irfb31n20dpbf.pdf?ci_sign=ed3075155006186cadb71ae9521f3327718e6583
IRFS31N20DTRLP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8726TRPBF irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7
IRLR8726TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 5.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 61A
Power dissipation: 75W
Pulsed drain current: 340A
auf Bestellung 681 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
168+0.43 EUR
191+0.38 EUR
242+0.3 EUR
256+0.28 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8743TRPBF pVersion=0046&contRep=ZT&docId=E2228120F8A1E7F1A303005056AB0C4F&compId=irlr8743pbf.pdf?ci_sign=13caac950d62003a7670c9a3bc787dc6b4dae60e
IRLR8743TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+1.04 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ24NPBF description pVersion=0046&contRep=ZT&docId=E1C04E7D5055A2F1A6F5005056AB5A8F&compId=irfz24n.pdf?ci_sign=035e258bd6fdc5de7520892f865a0f577cbf21f3
IRFZ24NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE2QR2280ZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9CA1DEB7370760C7&compId=ICE2QR2280Z.pdf?ci_sign=0afed20d41bae5cd14e264b6ccdd85b7a6c8c567
ICE2QR2280ZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: A/D converters - integrated circuits
Description: IC: PMIC; PWM controller; Ch: 1; DIP7; 10.5÷25VDC; SMPS; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Frequency: 39...65kHz
Operating voltage: 10.5...25V DC
Application: SMPS
Breakdown voltage: 800V
Input voltage: 85...265V
Topology: flyback
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2110PBF pVersion=0046&contRep=ZT&docId=E1C04E2EFD33EFF1A6F5005056AB5A8F&compId=ir2110_2113.pdf?ci_sign=c9154912c319d9857d6c998c98ec5f1a92c658ee
IR2110PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-off time: 111ns
Turn-on time: 145ns
Power: 1.6W
auf Bestellung 728 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.76 EUR
22+3.39 EUR
30+2.42 EUR
32+2.29 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IR2110SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD33EFF1A6F5005056AB5A8F&compId=ir2110_2113.pdf?ci_sign=c9154912c319d9857d6c998c98ec5f1a92c658ee
IR2110SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-off time: 111ns
Turn-on time: 145ns
Power: 1.25W
auf Bestellung 436 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.53 EUR
35+2.1 EUR
36+1.99 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IR2110STRPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBFF28572095EA&compId=IR2110STRPBF.pdf?ci_sign=df9d8034c817d5f92fb697b53c8f2c84160d7ab0
IR2110STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 500V
Turn-off time: 111ns
Turn-on time: 145ns
Power: 1.25W
auf Bestellung 765 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.47 EUR
36+1.99 EUR
39+1.87 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IHW20N135R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC621B74C57820&compId=IHW20N135R5.pdf?ci_sign=3482e7577980c28fddc8870bc3e93fab375fa327
IHW20N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.55 EUR
33+2.2 EUR
35+2.09 EUR
60+2.04 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
1EDN7512BXTSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA6801DE546FA40D3&compId=1EDN751x_1EDN851x.pdf?ci_sign=f7b6a61fa03f50b5c2e4aa8ce8e4947eacc724c2
1EDN7512BXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-SOT23-5
Output current: -8...4A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
auf Bestellung 2285 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
100+0.72 EUR
116+0.62 EUR
122+0.59 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
IRLML0040TRPBF pVersion=0046&contRep=ZT&docId=E2227B695F4D11F1A303005056AB0C4F&compId=irlml0040pbf.pdf?ci_sign=5d1842c3e30491551ce56d3423793e0f8c415056
IRLML0040TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 57697 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
256+0.28 EUR
382+0.19 EUR
447+0.16 EUR
863+0.083 EUR
910+0.079 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
IRLML0100TRPBF pVersion=0046&contRep=ZT&docId=E1C04E8F5825E0F1A6F5005056AB5A8F&compId=irlml0100pbf.pdf?ci_sign=bdf83814bed85f72f3cd88c4059bcf2266d07f53
IRLML0100TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 6559 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
215+0.33 EUR
293+0.24 EUR
334+0.21 EUR
658+0.11 EUR
695+0.1 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
IRLML6244TRPBF pVersion=0046&contRep=ZT&docId=E2227BEF25F70EF1A303005056AB0C4F&compId=irlml6244pbf.pdf?ci_sign=9e9a5be7e3521f0951b398d6655e0c43901db19e
IRLML6244TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 8.9nC
On-state resistance: 21mΩ
Gate-source voltage: ±12V
auf Bestellung 10213 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
221+0.32 EUR
280+0.26 EUR
400+0.18 EUR
516+0.14 EUR
589+0.12 EUR
878+0.082 EUR
926+0.077 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
IRLML6246TRPBF pVersion=0046&contRep=ZT&docId=E2227C073DE4D1F1A303005056AB0C4F&compId=irlml6246pbf.pdf?ci_sign=081a27482ca02397f5d07cd5b22cc57d56db8087
IRLML6246TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 3.5nC
On-state resistance: 46mΩ
Gate-source voltage: ±12V
auf Bestellung 5056 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
313+0.23 EUR
453+0.16 EUR
523+0.14 EUR
933+0.077 EUR
987+0.073 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
IRLML6346TRPBF pVersion=0046&contRep=ZT&docId=E2227C53954049F1A303005056AB0C4F&compId=irlml6346pbf.pdf?ci_sign=f015b0982e28988fc6ffca7b5cd078a776e1cb3e
IRLML6346TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 17A; 0.8W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.8W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 2.9nC
On-state resistance: 80mΩ
Gate-source voltage: ±12V
Pulsed drain current: 17A
auf Bestellung 10354 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
265+0.27 EUR
323+0.22 EUR
417+0.17 EUR
500+0.14 EUR
658+0.11 EUR
705+0.1 EUR
1000+0.099 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
BC848BE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df
BC848BE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1060+0.069 EUR
1180+0.062 EUR
1400+0.051 EUR
1480+0.048 EUR
Mindestbestellmenge: 1060
Im Einkaufswagen  Stück im Wert von  UAH
IRLR2908TRPBF pVersion=0046&contRep=ZT&docId=E2227E975B7441F1A303005056AB0C4F&compId=irlr2908pbf.pdf?ci_sign=275f9ac53c05c9fd8c3c2f0f94cbd4958816eab3
IRLR2908TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 39A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 39A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2003STRPBF irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780
IRS2003STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 750ns
Turn-off time: 180ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2005STRPBF irs2005s.pdf?fileId=5546d462533600a4015364c4246229e1
IRS2005STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 160ns
Turn-off time: 150ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2007SPBF pVersion=0046&contRep=ZT&docId=005056AB82531EE991DE094AADB658BF&compId=IRS2007SPBF.pdf?ci_sign=23f41c499e549f21ad84d82168dfac72ba4d0a9a
IRS2007SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 160ns
Turn-off time: 150ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2008SPBF pVersion=0046&contRep=ZT&docId=005056AB82531EE989A63D80180FB8BF&compId=IRS2008S.pdf?ci_sign=519175befe37f294a90d6c6f0b0c696fd6b6a464
IRS2008SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 750ns
Turn-off time: 180ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2011PBF description pVersion=0046&contRep=ZT&docId=E1C04E9B5E26C2F1A6F5005056AB5A8F&compId=irs2011pbf.pdf?ci_sign=8b98cbb48fac23b5d243658ba2d04bebde43ddae
IRS2011PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Mounting: THT
Supply voltage: 10...20V DC
Number of channels: 2
Case: DIP8
Kind of package: tube
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 1W
Turn-on time: 85ns
Turn-off time: 75ns
Output current: -1...1A
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2093MTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DAA4BA9F0B553D7&compId=IRS2093MTRPBF.pdf?ci_sign=e52fc9498b4cbd2fd8fae90e4df59b8441159497
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 4
Amplifier class: D
Case: MLPQ48
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7343TRPBF description pVersion=0046&contRep=ZT&docId=E221A084E32E22F1A303005056AB0C4F&compId=irf7343pbf.pdf?ci_sign=67f4a0e09b642d9ef37643bc443a2be3f815f7f4
IRF7343TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/105mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 7126 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.57 EUR
58+1.25 EUR
69+1.05 EUR
175+0.41 EUR
186+0.39 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7343QTR pVersion=0046&contRep=ZT&docId=E1C0458E4D7456F1A6F5005056AB5A8F&compId=auirf7343q.pdf?ci_sign=5951c580d1ae312f0ff808d6dd1ff22fd4d1e9c4
AUIRF7343QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 4.7W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 4.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43/95mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7342TRPBF pVersion=0046&contRep=ZT&docId=E221A06CFD47F4F1A303005056AB0C4F&compId=irf7342pbf.pdf?ci_sign=5924d7d1d4a809afdcc49f81c65ec7a6300718f9
IRF7342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 9414 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.7 EUR
64+1.13 EUR
73+0.99 EUR
160+0.45 EUR
169+0.42 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7342QTR pVersion=0046&contRep=ZT&docId=E1C0458E4D7448F1A6F5005056AB5A8F&compId=auirf7342q.pdf?ci_sign=97ff50904365263a4dbd19246af4cbb382583c69
AUIRF7342QTR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Gate charge: 26nC
On-state resistance: 0.17Ω
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGU04N60TAKMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB911564631820&compId=IGU04N60T.pdf?ci_sign=79c5db7457acfb90f2cffa20ce08bfdc7e4fa5bb
IGU04N60TAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO251
Type of transistor: IGBT
Power dissipation: 42W
Case: TO251
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Turn-on time: 21ns
Turn-off time: 207ns
Collector current: 4A
Pulsed collector current: 12A
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
66+1.09 EUR
92+0.78 EUR
97+0.74 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IKD04N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDA3E2ACF23820&compId=IKD04N60R.pdf?ci_sign=6efd6340cc350b45c24c45eb5a27009029527dee
IKD04N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ RC
Turn-on time: 22ns
Turn-off time: 317ns
Collector current: 4A
Pulsed collector current: 12A
auf Bestellung 2479 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
65+1.1 EUR
121+0.59 EUR
128+0.56 EUR
1000+0.54 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
IKP04N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE22916DB05820&compId=IKP04N60T.pdf?ci_sign=79887e35e97dee3f47a5ed0ea9755ace78373099
IKP04N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO220-3
Type of transistor: IGBT
Power dissipation: 42W
Case: TO220-3
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Turn-on time: 21ns
Turn-off time: 207ns
Collector current: 4A
Pulsed collector current: 12A
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.93 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3110ZTRPBF pVersion=0046&contRep=ZT&docId=E2227EF45E9F51F1A303005056AB0C4F&compId=irlr3110zpbf.pdf?ci_sign=64c51a4fa3a43285754294102b2ac04ad31b2f21
IRLR3110ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 588 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
49+1.47 EUR
66+1.09 EUR
70+1.03 EUR
500+1.02 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
BAS12504WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF13B870A32469&compId=BAS125-0xW.pdf?ci_sign=f5f44dc4e7ac8e846a5816e0f88ba496aa18aa00
BAS12504WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 0.1A
Max. forward impulse current: 0.5A
Max. off-state voltage: 25V
Semiconductor structure: double series
Type of diode: Schottky switching
auf Bestellung 2765 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
82+0.87 EUR
94+0.77 EUR
135+0.53 EUR
223+0.32 EUR
236+0.3 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
TLE49462KHTSA1 TLE4946-2K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc925c48637f
TLE49462KHTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Case: SC59
Range of detectable magnetic field: -3.5...3.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
Kind of sensor: latch
auf Bestellung 2608 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
82+0.88 EUR
131+0.55 EUR
139+0.52 EUR
1000+0.5 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
IGB15N60TATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B31032C72A4FA8&compId=IGB15N60T-DTE.pdf?ci_sign=c8a1ee71983920d8fe021504e43002c04a833b4b
IGB15N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK
Type of transistor: IGBT
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 882 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.29 EUR
37+1.96 EUR
41+1.77 EUR
50+1.43 EUR
53+1.36 EUR
100+1.3 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IGW75N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B381D15C556FA8&compId=IGW75N60H3-DTE.pdf?ci_sign=7a4792dde8410ac51a750f89e8d3fcf950b62f74
IGW75N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 75A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW75N60TFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B382A1450FCFA8&compId=IGW75N60T-DTE.pdf?ci_sign=e3398a93286a8c04f59275ea1e9fc67ac59b1506
IGW75N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 75A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.74 EUR
15+4.93 EUR
16+4.66 EUR
30+4.49 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKA15N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD1E877C847820&compId=IKA15N60T.pdf?ci_sign=ce907b1e3bd538123e3a5020ae0c7b1b51be7942
IKA15N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10.6A; 35.7W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 35.7W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector current: 10.6A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 28ns
Turn-off time: 238ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB15N60TATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD41F72CB29820&compId=IKB15N60T.pdf?ci_sign=9b743b6df9c5530ebc7f8eee8c1770ec9a429f91
IKB15N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: SMD
Kind of package: reel; tape
Technology: TRENCHSTOP™
Turn-on time: 28ns
Gate charge: 87nC
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Power dissipation: 130W
Collector-emitter voltage: 600V
Case: D2PAK
auf Bestellung 812 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.13 EUR
27+2.66 EUR
28+2.62 EUR
30+2.39 EUR
31+2.37 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IKD15N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDF1E34C9ED820&compId=IKD15N60R.pdf?ci_sign=edf8c9498bddcc0bab7c28dab797b14b4d8a5a23
IKD15N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 319ns
auf Bestellung 1956 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
36+2.03 EUR
41+1.77 EUR
47+1.54 EUR
50+1.46 EUR
52+1.4 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 252 504 756 1008 1260 1512 1764 2016 2268 2485 2486 2487 2488 2489 2490 2491 2492 2493 2494 2495 2520 2528  [ Nächste Seite >> ]