Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (150700) > Seite 2490 nach 2512
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ESD130B1W0201E6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: ESD130B1W0201E6327XTSA1 |
auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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ESD131B1W0201E6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: TVS Type of diode: TVS |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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FS75R12KE3BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 150A Power dissipation: 350W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoPACK™ 2 Topology: IGBT three-phase bridge; NTC thermistor Case: AG-ECONO2-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
FS75R12KE3BPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT Type of semiconductor module: IGBT |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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CY8C5287AXI-LP095 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller |
auf Bestellung 105 Stücke: Lieferzeit 14-21 Tag (e) |
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PVT412LPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Relay: solid state Type of relay: solid state |
auf Bestellung 605 Stücke: Lieferzeit 14-21 Tag (e) |
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PVT412APBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state Type of relay: solid state |
auf Bestellung 167 Stücke: Lieferzeit 14-21 Tag (e) |
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PVT412ASPBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state Type of relay: solid state |
auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) |
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PVT412PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Relay: solid state Type of relay: solid state |
auf Bestellung 108 Stücke: Lieferzeit 14-21 Tag (e) |
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PVT412S-TPBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state Type of relay: solid state |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138IXTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 78000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD30N06S2L23ATMA3 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 1487500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD30N06S4L23ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL40SC228 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 557A Case: D2PAK-7 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 755 Stücke: Lieferzeit 14-21 Tag (e) |
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IR21531STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS2103WE6433HTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching Type of diode: switching |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR3636TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 99A Case: DPAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IPD50N03S4L06ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP050N03LF2SAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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PVT312PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Relay: solid state Type of relay: solid state |
auf Bestellung 2018 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS118D | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 2.4A; Ch: 1; N-Channel; SMD; TO252-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-3 On-state resistance: 0.1Ω Technology: HITFET® Output voltage: 42V Power dissipation: 21W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IRF7328TRPBFXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IRF9321TRPBFXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 30V; 15A; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 15A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IRF9388TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; 30V; 12A; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IKCM15F60GAXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 210 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS84PH7894XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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FP50R12KT3BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A Pulsed collector current: 100A Application: Inverter Power dissipation: 280W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoPIM™ 2 Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT Case: AG-ECONO3-3 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 50A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
F475R12KS4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A Pulsed collector current: 150A Power dissipation: 500W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoPACK™ 2 Topology: IGBT half-bridge x2; NTC thermistor Type of semiconductor module: IGBT Case: AG-ECONO2-6 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 75A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
FS75R17KE3BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 75A Case: AG-ECONO3-4 Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 465W Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
FS150R12KT4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Pulsed collector current: 300A Power dissipation: 750W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoPACK™ 3 Topology: IGBT three-phase bridge; NTC thermistor Type of semiconductor module: IGBT Case: AG-ECONO3-4 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
FF300R17ME4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Power dissipation: 1.8kW Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoDUAL™ 3 Topology: IGBT half-bridge; NTC thermistor Type of semiconductor module: IGBT Case: AG-ECONOD-3 Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
FF900R12ME7B11BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 900A Pulsed collector current: 1.8kA Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Technology: TRENCHSTOP™ Topology: IGBT half-bridge; NTC thermistor Case: AG-ECONOD-5 Max. off-state voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
FS200R12KT4RB11BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Pulsed collector current: 400A Power dissipation: 1kW Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoPACK™ 3 Topology: IGBT three-phase bridge; NTC thermistor Type of semiconductor module: IGBT Case: AG-ECONO3-4 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
FS150R12KE3BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT Type of semiconductor module: IGBT |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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FS100R12KE3BOSA1 | INFINEON TECHNOLOGIES |
![]() ![]() Description: Module: IGBT Type of semiconductor module: IGBT |
auf Bestellung 86 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2004STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BC817K40E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 63000 Stücke: Lieferzeit 14-21 Tag (e) |
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BC817K40WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP5316H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP Type of transistor: PNP |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BC850CWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB4227PBFXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 65A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS244ZE3043AKSA2 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 19A; Ch: 1; N-Channel; THT; PG-TO220-5 Type of integrated circuit: power switch Kind of integrated circuit: low-side Number of channels: 1 Mounting: THT Case: PG-TO220-5 Kind of output: N-Channel Output current: 19A Power dissipation: 170W Integrated circuit features: internal temperature sensor Kind of package: tube Technology: TEMPFET® Operating temperature: -40...175°C On-state resistance: 13mΩ Output voltage: 55V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
SPP15N60C3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD65R380C6BTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.6A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPD65R380E6ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.6A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPD65R380E6BTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.6A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPA50R380CEXKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 4A; 29.2W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 4A Power dissipation: 29.2W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 477 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP4468PBFXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 290A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IRFP4568PBFXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 171A; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 171A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
BTS436L2GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch Type of integrated circuit: power switch |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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PVG612APBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state Type of relay: solid state |
auf Bestellung 353 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP4668PBFXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 130A; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 130A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IPA030N10NF2SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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CYPD3177-24LQXQ | INFINEON TECHNOLOGIES |
![]() Description: IC: interface Type of integrated circuit: interface |
auf Bestellung 3900 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB4020PBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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FP40R12KE3 | INFINEON TECHNOLOGIES |
![]() ![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A Case: AG-ECONO2-5 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 80A Application: Inverter Power dissipation: 200W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoPIM™ 2 Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
FP40R12KE3BPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT |
auf Bestellung 660 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7103TRPBFXTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 3A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IKCM10H60GAXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Frequency: 20kHz Output current: -10...10A Type of integrated circuit: driver Power dissipation: 23.1W Integrated circuit features: integrated bootstrap functionality Technology: ClPOS™ Mini; TRENCHSTOP™ Kind of integrated circuit: 3-phase motor controller; IPM Topology: IGBT three-phase bridge; thermistor Voltage class: 600V Mounting: THT Operating temperature: -40...125°C Case: PG-MDIP24 Operating voltage: 13.5...18.5/0...400V DC |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7311TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.6A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.6A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
ESD130B1W0201E6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - Unclassified
Description: ESD130B1W0201E6327XTSA1
Category: Diodes - Unclassified
Description: ESD130B1W0201E6327XTSA1
auf Bestellung 45000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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15000+ | 0.037 EUR |
ESD131B1W0201E6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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15000+ | 0.054 EUR |
FS75R12KE3BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 350W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 2
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-ECONO2-6
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 350W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 2
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-ECONO2-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FS75R12KE3BPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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15+ | 88.45 EUR |
CY8C5287AXI-LP095 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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90+ | 16.16 EUR |
PVT412LPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 605 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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50+ | 5.41 EUR |
100+ | 4.86 EUR |
PVT412APBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 8.81 EUR |
PVT412ASPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 8.81 EUR |
PVT412PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 5.43 EUR |
100+ | 4.89 EUR |
PVT412S-TPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
750+ | 4.9 EUR |
BSS138IXTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 78000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.046 EUR |
IPD30N06S2L23ATMA3 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1487500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.64 EUR |
IPD30N06S4L23ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.51 EUR |
IRL40SC228 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 557A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 557A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 755 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.05 EUR |
26+ | 2.85 EUR |
27+ | 2.69 EUR |
IR21531STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.17 EUR |
BAS2103WE6433HTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.057 EUR |
IRLR3636TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD50N03S4L06ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.43 EUR |
IPP050N03LF2SAKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.59 EUR |
PVT312PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 2018 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 5.91 EUR |
100+ | 5.32 EUR |
BTS118D |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.4A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 0.1Ω
Technology: HITFET®
Output voltage: 42V
Power dissipation: 21W
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.4A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 0.1Ω
Technology: HITFET®
Output voltage: 42V
Power dissipation: 21W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF7328TRPBFXTMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF9321TRPBFXTMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 15A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 15A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF9388TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 12A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 12A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKCM15F60GAXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 13.23 EUR |
42+ | 11.9 EUR |
BSS84PH7894XTMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.048 EUR |
FP50R12KT3BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Pulsed collector current: 100A
Application: Inverter
Power dissipation: 280W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-ECONO3-3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Pulsed collector current: 100A
Application: Inverter
Power dissipation: 280W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-ECONO3-3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
F475R12KS4BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Pulsed collector current: 150A
Power dissipation: 500W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 2
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO2-6
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Pulsed collector current: 150A
Power dissipation: 500W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 2
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO2-6
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FS75R17KE3BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: AG-ECONO3-4
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 465W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: AG-ECONO3-4
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 465W
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FS150R12KT4BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 300A
Power dissipation: 750W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 300A
Power dissipation: 750W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FF300R17ME4BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.8kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-3
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.8kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONOD-3
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FF900R12ME7B11BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: TRENCHSTOP™
Topology: IGBT half-bridge; NTC thermistor
Case: AG-ECONOD-5
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: TRENCHSTOP™
Topology: IGBT half-bridge; NTC thermistor
Case: AG-ECONOD-5
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FS200R12KT4RB11BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 400A
Power dissipation: 1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 400A
Power dissipation: 1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FS150R12KE3BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 208.39 EUR |
FS100R12KE3BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 170.11 EUR |
IRS2004STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.92 EUR |
BC817K40E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 63000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.048 EUR |
BC817K40WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.057 EUR |
BCP5316H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.17 EUR |
BC850CWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.049 EUR |
IRFB4227PBFXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.51 EUR |
BTS244ZE3043AKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 19A; Ch: 1; N-Channel; THT; PG-TO220-5
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Number of channels: 1
Mounting: THT
Case: PG-TO220-5
Kind of output: N-Channel
Output current: 19A
Power dissipation: 170W
Integrated circuit features: internal temperature sensor
Kind of package: tube
Technology: TEMPFET®
Operating temperature: -40...175°C
On-state resistance: 13mΩ
Output voltage: 55V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 19A; Ch: 1; N-Channel; THT; PG-TO220-5
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Number of channels: 1
Mounting: THT
Case: PG-TO220-5
Kind of output: N-Channel
Output current: 19A
Power dissipation: 170W
Integrated circuit features: internal temperature sensor
Kind of package: tube
Technology: TEMPFET®
Operating temperature: -40...175°C
On-state resistance: 13mΩ
Output voltage: 55V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SPP15N60C3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.74 EUR |
IPD65R380C6BTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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IPD65R380E6ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
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IPD65R380E6BTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
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IPA50R380CEXKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; 29.2W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Power dissipation: 29.2W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; 29.2W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Power dissipation: 29.2W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.47 EUR |
68+ | 1.07 EUR |
85+ | 0.85 EUR |
90+ | 0.8 EUR |
250+ | 0.77 EUR |
IRFP4468PBFXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IRFP4568PBFXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BTS436L2GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 3.75 EUR |
PVG612APBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 353 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 12.68 EUR |
IRFP4668PBFXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA030N10NF2SXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 2.55 EUR |
200+ | 2.29 EUR |
CYPD3177-24LQXQ |
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Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 3900 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
490+ | 1.84 EUR |
IRFB4020PBFXKMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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FP40R12KE3 | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Case: AG-ECONO2-5
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 80A
Application: Inverter
Power dissipation: 200W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Case: AG-ECONO2-5
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 80A
Application: Inverter
Power dissipation: 200W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
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FP40R12KE3BPSA1 |
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auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 119.1 EUR |
IRF7103TRPBFXTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IKCM10H60GAXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Frequency: 20kHz
Output current: -10...10A
Type of integrated circuit: driver
Power dissipation: 23.1W
Integrated circuit features: integrated bootstrap functionality
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Mounting: THT
Operating temperature: -40...125°C
Case: PG-MDIP24
Operating voltage: 13.5...18.5/0...400V DC
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Frequency: 20kHz
Output current: -10...10A
Type of integrated circuit: driver
Power dissipation: 23.1W
Integrated circuit features: integrated bootstrap functionality
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Mounting: THT
Operating temperature: -40...125°C
Case: PG-MDIP24
Operating voltage: 13.5...18.5/0...400V DC
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.37 EUR |
8+ | 8.97 EUR |
IRF7311TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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