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IAUZ30N08S5N186ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ30N08S5N186-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd436b20214 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7A; Idm: 120A; 41W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7A
Pulsed drain current: 120A
Power dissipation: 41W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 22.7mΩ
Mounting: SMD
Gate charge: 12.1nC
Kind of package: reel; tape
Kind of channel: enhancement
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IPD90P03P4L04ATMA1 INFINEON TECHNOLOGIES Infineon-IPD90P03P4L_04-DS-v01_00-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ddc9372011e07e8373a27c4&ack=t Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -90A; 137W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -90A
Pulsed drain current: -360A
Power dissipation: 137W
Case: PG-TO252-3-11
Gate-source voltage: -5...16V
On-state resistance: 4.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -P2
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IPD50P03P4L11ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50P03P4L_11-DS-v01_01-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ddc9372011e07ebbe0127e8&ack=t Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -42A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -42A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-11
Gate-source voltage: -5...16V
On-state resistance: 10.5mΩ
Mounting: SMD
Kind of channel: enhancement
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IPD50P03P4L11ATMA2 INFINEON TECHNOLOGIES Infineon-IPD50P03P4L-11-DataSheet-v01_02-EN.pdf?fileId=db3a30431ddc9372011e07ebbe0127e8 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 30V; 50A; 58W; DPAK; automotive industry
Type of transistor: P-MOSFET
Technology: MOSFET
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 58W
Case: DPAK
Gate-source voltage: 5V
On-state resistance: 13mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 42nC
Application: automotive industry
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IRS2106STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 235ns
Turn-on time: 320ns
Power: 625mW
Number of channels: 2
Voltage class: 600V
Supply voltage: 10...20V DC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
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BCX5310H6327XTSA1 INFINEON TECHNOLOGIES infineon-bcx51-bcx52-bcx53-ds-en.pdf Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
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1000+0.17 EUR
Mindestbestellmenge: 1000
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IPI111N15N3GAKSA1 IPI111N15N3GAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC35DE89B3811C&compId=IPI111N15N3G-DTE.pdf?ci_sign=bc35d3096953526a6ced35fd0a01b64c6057482b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 11.1mΩ
Gate-source voltage: ±20V
Drain current: 83A
Drain-source voltage: 150V
Power dissipation: 214W
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BC846SH6327XTSA1 BC846SH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5E8A42A64A469&compId=BC846UE6327.pdf?ci_sign=ea630812afe3a68be987098d6de4ca9d0884f66b Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 65V
Frequency: 250MHz
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IRFH7440TRPBF IRFH7440TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBBFA706B75EA&compId=IRFH7440TRPBF.pdf?ci_sign=efd1156289203e6b12eeebd10aca763d039ad2e6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6
Mounting: SMD
Trade name: StrongIRFET
Polarisation: unipolar
Gate charge: 92nC
On-state resistance: 2.4mΩ
Power dissipation: 104W
Drain current: 85A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Case: PQFN5X6
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
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57+1.27 EUR
65+1.12 EUR
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IRF6644TRPBF IRF6644TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6D3B6A2145F1A303005056AB0C4F&compId=irf6644pbf.pdf?ci_sign=9a8b55e72d72f093e7b297faca648d6d18f6ad2d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.3A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.3A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
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IRFH7446TRPBF IRFH7446TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBD1BEE22B5EA&compId=IRFH7446TRPBF.pdf?ci_sign=4a86436a2113e98a4301b774eaf05a469c467d4a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6
Case: PQFN5X6
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Trade name: StrongIRFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 117A
Power dissipation: 78W
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IRFR7440TRPBF INFINEON TECHNOLOGIES irfr7440pbf.pdf?fileId=5546d462533600a4015356359e662117 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 125A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 760A
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IRFR7446TRPBF IRFR7446TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDD1497D1E795EA&compId=IRFR7446TRPBF.pdf?ci_sign=24c156d8292f16630f64213370799026e4835bd9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 98W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Power dissipation: 98W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFS7440TRLPBF IRFS7440TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF886A236055EA&compId=IRFS7440TRLPBF.pdf?ci_sign=f111aa57786a0567dac9690912c94d214b916756 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 208W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
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BSC360N15NS3GATMA1 BSC360N15NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC69180631E11C&compId=BSC360N15NS3G-DTE.pdf?ci_sign=135a0d3070f5fa4bbd05a46b3c050f04f344d55f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 74W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Drain current: 33A
Power dissipation: 74W
Drain-source voltage: 150V
Technology: OptiMOS™ 3
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IPN50R2K0CEATMA1 IPN50R2K0CEATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA5D9D5AA51C143&compId=IPN50R2K0CE.pdf?ci_sign=12dd091a324c704a415514a39c8e3353844a7a59 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.3A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.3A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
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2ED21824S06JXUMA1 INFINEON TECHNOLOGIES Infineon-2ED2182-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7368a29e3 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
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2ED2182S06FXUMA1 2ED2182S06FXUMA1 INFINEON TECHNOLOGIES Infineon-2ED2182-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7368a29e3 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
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DD180N22SHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9D461C2B0053D1&compId=DD180N22S.pdf?ci_sign=837b437e4395e4382fc19b1f7d2c8f2007c11717 Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 226A; BG-PB34SB-1; screw
Max. forward voltage: 1.39V
Case: BG-PB34SB-1
Mechanical mounting: screw
Load current: 226A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 5.75kA
Electrical mounting: screw
Semiconductor structure: double series
Type of semiconductor module: diode
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BAT5404WH6327XTSA1 BAT5404WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT323
Mounting: SMD
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Semiconductor structure: double series
Type of diode: Schottky switching
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1000+0.072 EUR
1163+0.061 EUR
1244+0.057 EUR
1303+0.055 EUR
1454+0.049 EUR
1480+0.048 EUR
Mindestbestellmenge: 1000
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BAT5405WH6327XTSA1 BAT5405WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT323
Mounting: SMD
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
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834+0.086 EUR
944+0.076 EUR
1031+0.069 EUR
1083+0.066 EUR
1202+0.059 EUR
Mindestbestellmenge: 834
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BSC010N04LS6ATMA1 BSC010N04LS6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA80AD7A31E17960C4&compId=BSC010N04LS6ATMA1.pdf?ci_sign=c176625c6ac30d6e40377b1953ac9e5b9dcd35f7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8 FL
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 67nC
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IKQ50N120CT2XKSA1 IKQ50N120CT2XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AF8E3A772C4749&compId=IKQ50N120CT2.pdf?ci_sign=d9110ec64f0b1c60eb595432e40ae4d175375e74 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 151W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 2
Gate charge: 235nC
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IPN70R1K0CEATMA1 IPN70R1K0CEATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA457EA6188143&compId=IPN70R1K0CE.pdf?ci_sign=fdb6d19cf093910697e21e04ce0a35d5565b49ea Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 5W; PG-SOT223
Mounting: SMD
On-state resistance: 1Ω
Drain current: 4.7A
Power dissipation: 5W
Gate-source voltage: ±20V
Drain-source voltage: 700V
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-SOT223
Polarisation: unipolar
Gate charge: 15.2nC
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IKP39N65ES5XKSA1 INFINEON TECHNOLOGIES Infineon-IKP39N65ES5-DS-v02_01-EN.pdf?fileId=5546d462696dbf1201697b7740f4442c Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
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T560N18TOFXPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AD799E02A0720C7&compId=T560N.pdf?ci_sign=f6ca51bfc40228aaf083e8bbcf0295fb3dd68388 Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA
Max. off-state voltage: 1.8kV
Load current: 559A
Case: BG-T4814K0-1
Max. forward impulse current: 8kA
Gate current: 200mA
Type of thyristor: hockey-puck
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 809A
Kind of package: in-tray
Mounting: Press-Pack
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T3160N18TOFVTXPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDD99B59F310C17A0D3&compId=T3160N.pdf?ci_sign=5314bc8cdf0befb303b0dd5696c72eb466fefc36 Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 3.16kA
Case: BG-T11126K-1
Max. forward impulse current: 63kA
Gate current: 250mA
Type of thyristor: hockey-puck
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 7kA
Kind of package: in-tray
Mounting: Press-Pack
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TD160N18SOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AAB33E2DE81D274A&compId=TT160N18SOF_TD160N18SOF.pdf?ci_sign=f8a77b38debde98dac8e5e793665eb403c0267ff Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 160A
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TT160N18SOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AAB33E2DE81D274A&compId=TT160N18SOF_TD160N18SOF.pdf?ci_sign=f8a77b38debde98dac8e5e793665eb403c0267ff Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 160A; BG-PB34SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPW60R120P7 IPW60R120P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1633764BF4749&compId=IPW60R120P7.pdf?ci_sign=906c0788eddc934ecfe57a4582ab04c798875804 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Version: ESD
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.12Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 95W
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Kind of channel: enhancement
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IRF8788TRPBF IRF8788TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AE9E8C17B9F1A303005056AB0C4F&compId=irf8788pbf.pdf?ci_sign=f0fcf5faf3394f41f78b4d6575d17f702fe54c98 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BGT60TR13CE6327XUMA1 INFINEON TECHNOLOGIES Infineon-BGT60TR13CDataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d718a49017d94bac88e5d43 Category: Unclassified
Description: BGT60TR13CE6327XUMA1
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BCW68FE6327 BCW68FE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBAF9D236352469&compId=BCW68FE6327.pdf?ci_sign=26327f24428971b88b9fb92a44fa0833d65a9381 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
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735+0.097 EUR
1000+0.078 EUR
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BCW68GE6327HTSA1 INFINEON TECHNOLOGIES bcw67_bcw68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ad64a2033e Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 800mA; 330mW; SC59
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SC59
Current gain: 160
Mounting: SMD
Frequency: 200MHz
Application: automotive industry
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BCW68HE6327HTSA1 INFINEON TECHNOLOGIES bcw67_bcw68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ad64a2033e Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
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IGCM04G60HAXKMA1 IGCM04G60HAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACC01A37E9D3D7&compId=IGCM04G60HA.pdf?ci_sign=7d15329436abe701c9bb6bb687929afe58344d0a Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; ClPOS™ Mini,TRENCHSTOP™
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -4...4A
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 21.8W
Operating voltage: 13.5...18.5/0...400V DC
Voltage class: 600V
Frequency: 20kHz
Integrated circuit features: integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Topology: IGBT three-phase bridge
Kind of package: tube
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9+8.78 EUR
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14+7.02 EUR
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SMBTA92E6327HTSA1 SMBTA92E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586993CFFCDBBC469&compId=SMBTA92E6327.pdf?ci_sign=5614a697b45f81fbd66dbe57ff189c5f61165336 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 50MHz
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IPA60R160P6XKSA1 IPA60R160P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594CB573E1511BF&compId=IPA60R160P6-DTE.pdf?ci_sign=00d168e35ae5fbfea8f6315fd81963926b971ae3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R199CPXKSA1 IPA60R199CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B4891FF1D1BF&compId=IPA60R199CP-DTE.pdf?ci_sign=308ea5579321e81455d0dbd6fd33a8b7f65b595d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R180P7XKSA1 IPA60R180P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD8121E29F2620C7&compId=IPA60R180P7.pdf?ci_sign=c50b97310bf5cc30162633128355da9e77326508 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
Produkt ist nicht verfügbar
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BSS83PH6327 BSS83PH6327 INFINEON TECHNOLOGIES Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -330mA; 360mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.33A
Case: SOT23
On-state resistance: 2Ω
Mounting: SMD
Power: 0.36W
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BSS215PH6327XTSA1 BSS215PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ACD8DA556CD271BF&compId=BSS215PH6327-DTE.pdf?ci_sign=ee721eee10c54738076db65e8af27589a70a24dd Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PG-SOT23
Drain-source voltage: -20V
Drain current: -1.5A
Technology: OptiMOS™ P2
On-state resistance: 0.15Ω
Power dissipation: 0.5W
Gate-source voltage: ±12V
Kind of channel: enhancement
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350+0.2 EUR
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596+0.12 EUR
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Mindestbestellmenge: 167
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XC878M16FFI5VACFXUMA1 XC878M16FFI5VACFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6B5D218DDDE28&compId=XC878-DTE.pdf?ci_sign=73ff8bfb0968993eba897d4efa086a4563cc4514 Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; PG-LQFP-64
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.7MHz
Interface: SPI; UART
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 10
Memory: 3kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 2
Number of input capture channels: 2
Kind of core: 8-bit
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IPD70N10S312ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N10S3L_16-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908858535951&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Pulsed drain current: 280A
Power dissipation: 125W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD65R600E6BTMA1 IPD65R600E6BTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8E5E68E2EF1BF&compId=IPD65R600E6-DTE.pdf?ci_sign=59c90fa50e42dc67494aef06d3d5da5c823aaa78 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.6Ω
Drain current: 7.3A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R400CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb64cd44f67 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 9.5A
Pulsed drain current: 30A
Power dissipation: 118W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD65R190C7ATMA1 IPD65R190C7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8CB2819D4D1BF&compId=IPD65R190C7-DTE.pdf?ci_sign=5700f2118e7e3ee98f86e016fa83c9b88a9b5031 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.19Ω
Drain current: 3.2A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R1K4CFDBTMA1 IPD65R1K4CFDBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8CEC73770D1BF&compId=IPD65R1K4CFD-DTE.pdf?ci_sign=b928a2b94e9621d3b5a31d08238e731a76205d22 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3
Mounting: SMD
On-state resistance: 1.4Ω
Drain current: 2.8A
Gate-source voltage: ±20V
Power dissipation: 28.4W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R225C7ATMA1 IPD65R225C7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8D067AAF6B1BF&compId=IPD65R225C7-DTE.pdf?ci_sign=1dddc7134fffe409a6f26a69ff7854928884cafb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.225Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R250C6XTMA1 IPD65R250C6XTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8D253D185B1BF&compId=IPD65R250C6-DTE.pdf?ci_sign=7c49b82797104a34ec95179a2417c35ddc9e098b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.25Ω
Drain current: 16.1A
Gate-source voltage: ±20V
Power dissipation: 208.3W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
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IPD65R420CFDATMA1 IPD65R420CFDATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8E1767A49F1BF&compId=IPD65R420CFD-DTE.pdf?ci_sign=9a1acad8e9e24db7a0a96064e598b98de129772e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.42Ω
Drain current: 8.7A
Gate-source voltage: ±20V
Power dissipation: 83.3W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R420CFDBTMA1 IPD65R420CFDBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8E1767A49F1BF&compId=IPD65R420CFD-DTE.pdf?ci_sign=9a1acad8e9e24db7a0a96064e598b98de129772e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.42Ω
Drain current: 8.7A
Gate-source voltage: ±20V
Power dissipation: 83.3W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
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IPD65R600C6BTMA1 IPD65R600C6BTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8E362EF0191BF&compId=IPD65R600C6-DTE.pdf?ci_sign=511836bb419e94c8792531fa9672166f297aa494 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.6Ω
Drain current: 7.3A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
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IPD65R600E6ATMA1 IPD65R600E6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8E5E68E2EF1BF&compId=IPD65R600E6-DTE.pdf?ci_sign=59c90fa50e42dc67494aef06d3d5da5c823aaa78 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.6Ω
Drain current: 7.3A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R660CFDATMA1 IPD65R660CFDATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8E8D61025D1BF&compId=IPD65R660CFD-DTE.pdf?ci_sign=4630fb3febd7be1f79e8b800d8ac29becd5cacb2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.66Ω
Drain current: 6A
Gate-source voltage: ±20V
Power dissipation: 62.5W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R660CFDBTMA1 IPD65R660CFDBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8E8D61025D1BF&compId=IPD65R660CFD-DTE.pdf?ci_sign=4630fb3febd7be1f79e8b800d8ac29becd5cacb2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.66Ω
Drain current: 6A
Gate-source voltage: ±20V
Power dissipation: 62.5W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
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IPD65R950CFDATMA1 IPD65R950CFDATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8ECD181F1F1BF&compId=IPD65R950CFD-DTE.pdf?ci_sign=163a5b5405e5cffaefe3adf7167ab1bd5c1dce66 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.95Ω
Drain current: 3.9A
Gate-source voltage: ±20V
Power dissipation: 36.7W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R950CFDBTMA1 IPD65R950CFDBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8ECD181F1F1BF&compId=IPD65R950CFD-DTE.pdf?ci_sign=163a5b5405e5cffaefe3adf7167ab1bd5c1dce66 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.95Ω
Drain current: 3.9A
Gate-source voltage: ±20V
Power dissipation: 36.7W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
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IPD65R650CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD65R650CE-DS-v02_00-EN.pdf?fileId=5546d4624d6fc3d5014d7220d45a1844 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 10.1A; 86W; DPAK; SMT
Mounting: SMD
Electrical mounting: SMT
Gate charge: 23nC
On-state resistance: 0.54Ω
Drain current: 10.1A
Gate-source voltage: 20V
Power dissipation: 86W
Drain-source voltage: 650V
Technology: MOSFET
Case: DPAK
Kind of channel: enhancement
Polarisation: N
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.23 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IR2175STRPBF INFINEON TECHNOLOGIES IRSDS17958-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor; SO8; 20mA; 625mW; 9.5÷20VDC; 600V
Type of integrated circuit: driver
Kind of integrated circuit: current sensor
Case: SO8
Output current: 20mA
Power: 625mW
Supply voltage: 9.5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Produkt ist nicht verfügbar
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IAUZ30N08S5N186ATMA1 Infineon-IAUZ30N08S5N186-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd436b20214
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7A; Idm: 120A; 41W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7A
Pulsed drain current: 120A
Power dissipation: 41W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 22.7mΩ
Mounting: SMD
Gate charge: 12.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD90P03P4L04ATMA1 Infineon-IPD90P03P4L_04-DS-v01_00-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ddc9372011e07e8373a27c4&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -90A; 137W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -90A
Pulsed drain current: -360A
Power dissipation: 137W
Case: PG-TO252-3-11
Gate-source voltage: -5...16V
On-state resistance: 4.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -P2
Produkt ist nicht verfügbar
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IPD50P03P4L11ATMA1 Infineon-IPD50P03P4L_11-DS-v01_01-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ddc9372011e07ebbe0127e8&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -42A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -42A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-11
Gate-source voltage: -5...16V
On-state resistance: 10.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50P03P4L11ATMA2 Infineon-IPD50P03P4L-11-DataSheet-v01_02-EN.pdf?fileId=db3a30431ddc9372011e07ebbe0127e8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 30V; 50A; 58W; DPAK; automotive industry
Type of transistor: P-MOSFET
Technology: MOSFET
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 58W
Case: DPAK
Gate-source voltage: 5V
On-state resistance: 13mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 42nC
Application: automotive industry
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.56 EUR
Mindestbestellmenge: 2500
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IRS2106STRPBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 235ns
Turn-on time: 320ns
Power: 625mW
Number of channels: 2
Voltage class: 600V
Supply voltage: 10...20V DC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Produkt ist nicht verfügbar
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BCX5310H6327XTSA1 infineon-bcx51-bcx52-bcx53-ds-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.17 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPI111N15N3GAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC35DE89B3811C&compId=IPI111N15N3G-DTE.pdf?ci_sign=bc35d3096953526a6ced35fd0a01b64c6057482b
IPI111N15N3GAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 11.1mΩ
Gate-source voltage: ±20V
Drain current: 83A
Drain-source voltage: 150V
Power dissipation: 214W
Produkt ist nicht verfügbar
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BC846SH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5E8A42A64A469&compId=BC846UE6327.pdf?ci_sign=ea630812afe3a68be987098d6de4ca9d0884f66b
BC846SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 65V
Frequency: 250MHz
Produkt ist nicht verfügbar
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IRFH7440TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBBFA706B75EA&compId=IRFH7440TRPBF.pdf?ci_sign=efd1156289203e6b12eeebd10aca763d039ad2e6
IRFH7440TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6
Mounting: SMD
Trade name: StrongIRFET
Polarisation: unipolar
Gate charge: 92nC
On-state resistance: 2.4mΩ
Power dissipation: 104W
Drain current: 85A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Case: PQFN5X6
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
auf Bestellung 3221 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.69 EUR
57+1.27 EUR
65+1.12 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
IRF6644TRPBF pVersion=0046&contRep=ZT&docId=E21F6D3B6A2145F1A303005056AB0C4F&compId=irf6644pbf.pdf?ci_sign=9a8b55e72d72f093e7b297faca648d6d18f6ad2d
IRF6644TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.3A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.3A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
Produkt ist nicht verfügbar
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IRFH7446TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBD1BEE22B5EA&compId=IRFH7446TRPBF.pdf?ci_sign=4a86436a2113e98a4301b774eaf05a469c467d4a
IRFH7446TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6
Case: PQFN5X6
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Trade name: StrongIRFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 117A
Power dissipation: 78W
Produkt ist nicht verfügbar
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IRFR7440TRPBF irfr7440pbf.pdf?fileId=5546d462533600a4015356359e662117
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 125A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 760A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR7446TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDD1497D1E795EA&compId=IRFR7446TRPBF.pdf?ci_sign=24c156d8292f16630f64213370799026e4835bd9
IRFR7446TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 98W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Power dissipation: 98W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7440TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF886A236055EA&compId=IRFS7440TRLPBF.pdf?ci_sign=f111aa57786a0567dac9690912c94d214b916756
IRFS7440TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 208W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC360N15NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC69180631E11C&compId=BSC360N15NS3G-DTE.pdf?ci_sign=135a0d3070f5fa4bbd05a46b3c050f04f344d55f
BSC360N15NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 74W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Drain current: 33A
Power dissipation: 74W
Drain-source voltage: 150V
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN50R2K0CEATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA5D9D5AA51C143&compId=IPN50R2K0CE.pdf?ci_sign=12dd091a324c704a415514a39c8e3353844a7a59
IPN50R2K0CEATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.3A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.3A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2ED21824S06JXUMA1 Infineon-2ED2182-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7368a29e3
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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2ED2182S06FXUMA1 Infineon-2ED2182-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7368a29e3
2ED2182S06FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD180N22SHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9D461C2B0053D1&compId=DD180N22S.pdf?ci_sign=837b437e4395e4382fc19b1f7d2c8f2007c11717
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 226A; BG-PB34SB-1; screw
Max. forward voltage: 1.39V
Case: BG-PB34SB-1
Mechanical mounting: screw
Load current: 226A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 5.75kA
Electrical mounting: screw
Semiconductor structure: double series
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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BAT5404WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16
BAT5404WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT323
Mounting: SMD
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Semiconductor structure: double series
Type of diode: Schottky switching
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.072 EUR
1163+0.061 EUR
1244+0.057 EUR
1303+0.055 EUR
1454+0.049 EUR
1480+0.048 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
BAT5405WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16
BAT5405WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT323
Mounting: SMD
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
834+0.086 EUR
944+0.076 EUR
1031+0.069 EUR
1083+0.066 EUR
1202+0.059 EUR
Mindestbestellmenge: 834
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BSC010N04LS6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA80AD7A31E17960C4&compId=BSC010N04LS6ATMA1.pdf?ci_sign=c176625c6ac30d6e40377b1953ac9e5b9dcd35f7
BSC010N04LS6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8 FL
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 67nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKQ50N120CT2XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AF8E3A772C4749&compId=IKQ50N120CT2.pdf?ci_sign=d9110ec64f0b1c60eb595432e40ae4d175375e74
IKQ50N120CT2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 151W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 2
Gate charge: 235nC
Produkt ist nicht verfügbar
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IPN70R1K0CEATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA457EA6188143&compId=IPN70R1K0CE.pdf?ci_sign=fdb6d19cf093910697e21e04ce0a35d5565b49ea
IPN70R1K0CEATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 5W; PG-SOT223
Mounting: SMD
On-state resistance: 1Ω
Drain current: 4.7A
Power dissipation: 5W
Gate-source voltage: ±20V
Drain-source voltage: 700V
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-SOT223
Polarisation: unipolar
Gate charge: 15.2nC
Produkt ist nicht verfügbar
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IKP39N65ES5XKSA1 Infineon-IKP39N65ES5-DS-v02_01-EN.pdf?fileId=5546d462696dbf1201697b7740f4442c
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+2.37 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
T560N18TOFXPSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AD799E02A0720C7&compId=T560N.pdf?ci_sign=f6ca51bfc40228aaf083e8bbcf0295fb3dd68388
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA
Max. off-state voltage: 1.8kV
Load current: 559A
Case: BG-T4814K0-1
Max. forward impulse current: 8kA
Gate current: 200mA
Type of thyristor: hockey-puck
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 809A
Kind of package: in-tray
Mounting: Press-Pack
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
T3160N18TOFVTXPSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD99B59F310C17A0D3&compId=T3160N.pdf?ci_sign=5314bc8cdf0befb303b0dd5696c72eb466fefc36
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 3.16kA
Case: BG-T11126K-1
Max. forward impulse current: 63kA
Gate current: 250mA
Type of thyristor: hockey-puck
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 7kA
Kind of package: in-tray
Mounting: Press-Pack
Produkt ist nicht verfügbar
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TD160N18SOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AAB33E2DE81D274A&compId=TT160N18SOF_TD160N18SOF.pdf?ci_sign=f8a77b38debde98dac8e5e793665eb403c0267ff
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 160A
Produkt ist nicht verfügbar
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TT160N18SOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AAB33E2DE81D274A&compId=TT160N18SOF_TD160N18SOF.pdf?ci_sign=f8a77b38debde98dac8e5e793665eb403c0267ff
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 160A; BG-PB34SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPW60R120P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1633764BF4749&compId=IPW60R120P7.pdf?ci_sign=906c0788eddc934ecfe57a4582ab04c798875804
IPW60R120P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Version: ESD
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.12Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 95W
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF8788TRPBF pVersion=0046&contRep=ZT&docId=E221AE9E8C17B9F1A303005056AB0C4F&compId=irf8788pbf.pdf?ci_sign=f0fcf5faf3394f41f78b4d6575d17f702fe54c98
IRF8788TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BGT60TR13CE6327XUMA1 Infineon-BGT60TR13CDataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d718a49017d94bac88e5d43
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: BGT60TR13CE6327XUMA1
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4500+14.17 EUR
Mindestbestellmenge: 4500
Im Einkaufswagen  Stück im Wert von  UAH
BCW68FE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBAF9D236352469&compId=BCW68FE6327.pdf?ci_sign=26327f24428971b88b9fb92a44fa0833d65a9381
BCW68FE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
414+0.17 EUR
628+0.11 EUR
735+0.097 EUR
1000+0.078 EUR
3000+0.067 EUR
Mindestbestellmenge: 295
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BCW68GE6327HTSA1 bcw67_bcw68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ad64a2033e
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 800mA; 330mW; SC59
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SC59
Current gain: 160
Mounting: SMD
Frequency: 200MHz
Application: automotive industry
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.062 EUR
Mindestbestellmenge: 3000
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BCW68HE6327HTSA1 bcw67_bcw68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ad64a2033e
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 768000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.062 EUR
Mindestbestellmenge: 3000
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IGCM04G60HAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACC01A37E9D3D7&compId=IGCM04G60HA.pdf?ci_sign=7d15329436abe701c9bb6bb687929afe58344d0a
IGCM04G60HAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; ClPOS™ Mini,TRENCHSTOP™
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -4...4A
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 21.8W
Operating voltage: 13.5...18.5/0...400V DC
Voltage class: 600V
Frequency: 20kHz
Integrated circuit features: integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Topology: IGBT three-phase bridge
Kind of package: tube
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.57 EUR
9+8.78 EUR
10+7.91 EUR
14+7.02 EUR
Mindestbestellmenge: 8
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SMBTA92E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586993CFFCDBBC469&compId=SMBTA92E6327.pdf?ci_sign=5614a697b45f81fbd66dbe57ff189c5f61165336
SMBTA92E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 50MHz
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
227+0.32 EUR
395+0.18 EUR
621+0.12 EUR
1000+0.097 EUR
Mindestbestellmenge: 193
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IPA60R160P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594CB573E1511BF&compId=IPA60R160P6-DTE.pdf?ci_sign=00d168e35ae5fbfea8f6315fd81963926b971ae3
IPA60R160P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R199CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B4891FF1D1BF&compId=IPA60R199CP-DTE.pdf?ci_sign=308ea5579321e81455d0dbd6fd33a8b7f65b595d
IPA60R199CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R180P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD8121E29F2620C7&compId=IPA60R180P7.pdf?ci_sign=c50b97310bf5cc30162633128355da9e77326508
IPA60R180P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
Produkt ist nicht verfügbar
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BSS83PH6327
BSS83PH6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -330mA; 360mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.33A
Case: SOT23
On-state resistance: 2Ω
Mounting: SMD
Power: 0.36W
Produkt ist nicht verfügbar
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BSS215PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ACD8DA556CD271BF&compId=BSS215PH6327-DTE.pdf?ci_sign=ee721eee10c54738076db65e8af27589a70a24dd
BSS215PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PG-SOT23
Drain-source voltage: -20V
Drain current: -1.5A
Technology: OptiMOS™ P2
On-state resistance: 0.15Ω
Power dissipation: 0.5W
Gate-source voltage: ±12V
Kind of channel: enhancement
auf Bestellung 2944 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
205+0.35 EUR
237+0.3 EUR
350+0.2 EUR
414+0.17 EUR
596+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 167
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XC878M16FFI5VACFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6B5D218DDDE28&compId=XC878-DTE.pdf?ci_sign=73ff8bfb0968993eba897d4efa086a4563cc4514
XC878M16FFI5VACFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; PG-LQFP-64
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.7MHz
Interface: SPI; UART
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 10
Memory: 3kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 2
Number of input capture channels: 2
Kind of core: 8-bit
Produkt ist nicht verfügbar
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IPD70N10S312ATMA1 Infineon-IPD50N10S3L_16-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908858535951&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Pulsed drain current: 280A
Power dissipation: 125W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD65R600E6BTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8E5E68E2EF1BF&compId=IPD65R600E6-DTE.pdf?ci_sign=59c90fa50e42dc67494aef06d3d5da5c823aaa78
IPD65R600E6BTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.6Ω
Drain current: 7.3A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R400CEAUMA1 Infineon-IPD65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb64cd44f67
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 9.5A
Pulsed drain current: 30A
Power dissipation: 118W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD65R190C7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8CB2819D4D1BF&compId=IPD65R190C7-DTE.pdf?ci_sign=5700f2118e7e3ee98f86e016fa83c9b88a9b5031
IPD65R190C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.19Ω
Drain current: 3.2A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R1K4CFDBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8CEC73770D1BF&compId=IPD65R1K4CFD-DTE.pdf?ci_sign=b928a2b94e9621d3b5a31d08238e731a76205d22
IPD65R1K4CFDBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3
Mounting: SMD
On-state resistance: 1.4Ω
Drain current: 2.8A
Gate-source voltage: ±20V
Power dissipation: 28.4W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R225C7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8D067AAF6B1BF&compId=IPD65R225C7-DTE.pdf?ci_sign=1dddc7134fffe409a6f26a69ff7854928884cafb
IPD65R225C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.225Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R250C6XTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8D253D185B1BF&compId=IPD65R250C6-DTE.pdf?ci_sign=7c49b82797104a34ec95179a2417c35ddc9e098b
IPD65R250C6XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.25Ω
Drain current: 16.1A
Gate-source voltage: ±20V
Power dissipation: 208.3W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R420CFDATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8E1767A49F1BF&compId=IPD65R420CFD-DTE.pdf?ci_sign=9a1acad8e9e24db7a0a96064e598b98de129772e
IPD65R420CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.42Ω
Drain current: 8.7A
Gate-source voltage: ±20V
Power dissipation: 83.3W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD65R420CFDBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8E1767A49F1BF&compId=IPD65R420CFD-DTE.pdf?ci_sign=9a1acad8e9e24db7a0a96064e598b98de129772e
IPD65R420CFDBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.42Ω
Drain current: 8.7A
Gate-source voltage: ±20V
Power dissipation: 83.3W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R600C6BTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8E362EF0191BF&compId=IPD65R600C6-DTE.pdf?ci_sign=511836bb419e94c8792531fa9672166f297aa494
IPD65R600C6BTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.6Ω
Drain current: 7.3A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R600E6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8E5E68E2EF1BF&compId=IPD65R600E6-DTE.pdf?ci_sign=59c90fa50e42dc67494aef06d3d5da5c823aaa78
IPD65R600E6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.6Ω
Drain current: 7.3A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R660CFDATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8E8D61025D1BF&compId=IPD65R660CFD-DTE.pdf?ci_sign=4630fb3febd7be1f79e8b800d8ac29becd5cacb2
IPD65R660CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.66Ω
Drain current: 6A
Gate-source voltage: ±20V
Power dissipation: 62.5W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R660CFDBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8E8D61025D1BF&compId=IPD65R660CFD-DTE.pdf?ci_sign=4630fb3febd7be1f79e8b800d8ac29becd5cacb2
IPD65R660CFDBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.66Ω
Drain current: 6A
Gate-source voltage: ±20V
Power dissipation: 62.5W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R950CFDATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8ECD181F1F1BF&compId=IPD65R950CFD-DTE.pdf?ci_sign=163a5b5405e5cffaefe3adf7167ab1bd5c1dce66
IPD65R950CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.95Ω
Drain current: 3.9A
Gate-source voltage: ±20V
Power dissipation: 36.7W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R950CFDBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8ECD181F1F1BF&compId=IPD65R950CFD-DTE.pdf?ci_sign=163a5b5405e5cffaefe3adf7167ab1bd5c1dce66
IPD65R950CFDBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
On-state resistance: 0.95Ω
Drain current: 3.9A
Gate-source voltage: ±20V
Power dissipation: 36.7W
Drain-source voltage: 650V
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R650CEAUMA1 Infineon-IPD65R650CE-DS-v02_00-EN.pdf?fileId=5546d4624d6fc3d5014d7220d45a1844
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 10.1A; 86W; DPAK; SMT
Mounting: SMD
Electrical mounting: SMT
Gate charge: 23nC
On-state resistance: 0.54Ω
Drain current: 10.1A
Gate-source voltage: 20V
Power dissipation: 86W
Drain-source voltage: 650V
Technology: MOSFET
Case: DPAK
Kind of channel: enhancement
Polarisation: N
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.23 EUR
Mindestbestellmenge: 2500
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IR2175STRPBF IRSDS17958-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor; SO8; 20mA; 625mW; 9.5÷20VDC; 600V
Type of integrated circuit: driver
Kind of integrated circuit: current sensor
Case: SO8
Output current: 20mA
Power: 625mW
Supply voltage: 9.5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Produkt ist nicht verfügbar
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