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IPD60R1K5PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R1K5PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e225df2d46744 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 2.2A; Idm: 6A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 2.892Ω
Drain current: 2.2A
Pulsed drain current: 6A
Power dissipation: 22W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
Produkt ist nicht verfügbar
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IPD60R2K0C6ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R2K0C6-DS-v02_01-EN.pdf?fileId=db3a304329a0f6ee012a0dfc6b8b064f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.5A; Idm: 6A; 22.3W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 2Ω
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 22.3W
Gate-source voltage: ±20V
Technology: CoolMOS™ C6
Drain-source voltage: 600V
Case: PG-TO252
Produkt ist nicht verfügbar
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IPD60R2K0PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e226704e76747 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 1.9A; 20W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 3.824Ω
Drain current: 1.9A
Pulsed drain current: 4.5A
Power dissipation: 20W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
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IPD60R380C6ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R380C6-DS-v02_02-EN.pdf?fileId=db3a30433ecb86d4013ed661f42d23f2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; Idm: 30A; 83W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.38Ω
Drain current: 6.7A
Pulsed drain current: 30A
Power dissipation: 83W
Gate-source voltage: ±20V
Technology: CoolMOS™ C6
Drain-source voltage: 600V
Case: PG-TO252
Produkt ist nicht verfügbar
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IPD60R385CPATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R385CP-DS-v02_04-EN.pdf?fileId=db3a30432313ff5e012385595fd16763 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.385Ω
Drain current: 5.7A
Pulsed drain current: 27A
Power dissipation: 83W
Gate-source voltage: ±20V
Technology: CoolMOS™ CP
Drain-source voltage: 600V
Case: PG-TO252
Produkt ist nicht verfügbar
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IPD60R3K3C6ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R3K3C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129f96874465b3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 3.3Ω
Drain current: 1.1A
Pulsed drain current: 4A
Power dissipation: 18.1W
Gate-source voltage: ±20V
Technology: CoolMOS™ C6
Drain-source voltage: 600V
Case: PG-TO252
Produkt ist nicht verfügbar
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IPD60R400CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R400CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c83667001f0c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.4Ω
Drain current: 9.3A
Pulsed drain current: 30A
Power dissipation: 112W
Gate-source voltage: ±20V
Technology: CoolMOS™ CE
Drain-source voltage: 600V
Case: PG-TO252
Produkt ist nicht verfügbar
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IPD60R600C6ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R600C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eef7f5937259b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 19A; 63W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.6Ω
Drain current: 4.6A
Pulsed drain current: 19A
Power dissipation: 63W
Gate-source voltage: ±20V
Technology: CoolMOS™ CE
Drain-source voltage: 600V
Case: PG-TO252
Produkt ist nicht verfügbar
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IPD60R600PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed61c45f839e9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 4A; Idm: 14A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 1.219Ω
Drain current: 4A
Pulsed drain current: 14A
Power dissipation: 31W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: PG-TO252-3
Produkt ist nicht verfügbar
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IPD60R1K0CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R1K0CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7bf4c481e94 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 6.8A; 61W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Mounting: SMD
Electrical mounting: SMT
Gate charge: 13nC
On-state resistance: 1Ω
Drain current: 6.8A
Power dissipation: 61W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK; TO252
auf Bestellung 17500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.33 EUR
Mindestbestellmenge: 2500
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IPD60R2K1CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R2K1CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c7e404601eaa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 3.7A; 38W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 6.7nC
On-state resistance: 2.1Ω
Drain current: 3.7A
Power dissipation: 38W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.25 EUR
Mindestbestellmenge: 2500
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IPD60R180P7ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bd338b83cb3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.37 EUR
Mindestbestellmenge: 2500
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IPD60R1K5CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 5A; 49W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 9.4nC
On-state resistance: 1.5Ω
Drain current: 5A
Power dissipation: 49W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK; TO252
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.28 EUR
Mindestbestellmenge: 2500
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IPD60R380P6ATMA1 INFINEON TECHNOLOGIES Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10.6A; 83W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Mounting: SMD
Electrical mounting: SMT
Gate charge: 19nC
On-state resistance: 0.38Ω
Drain current: 10.6A
Power dissipation: 83W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.69 EUR
Mindestbestellmenge: 2500
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IPD60R3K4CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537fcd09123a87 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 2.6A; 29W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 4.6nC
On-state resistance: 3.17Ω
Drain current: 2.6A
Power dissipation: 29W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.22 EUR
Mindestbestellmenge: 2500
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IPD60R600P6ATMA1 INFINEON TECHNOLOGIES DS_IPx60R600P6_2_1.pdf?fileId=db3a30433f2e70c5013f3862b5622681 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 7.3A; 63W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Mounting: SMD
Electrical mounting: SMT
Gate charge: 12nC
On-state resistance: 0.6Ω
Drain current: 7.3A
Power dissipation: 63W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.51 EUR
Mindestbestellmenge: 2500
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IPD60R800CEAUMA1 INFINEON TECHNOLOGIES IPD%2CIPA60R800CE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 8.4A; 74W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 17.2nC
On-state resistance: 0.8Ω
Drain current: 8.4A
Power dissipation: 74W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK; TO252
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.38 EUR
Mindestbestellmenge: 2500
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IPD60R950C6ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R950C6-DS-v02_02-en.pdf?fileId=db3a30433ee50ba8013ef00bb8dd26c6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.65 EUR
Mindestbestellmenge: 2500
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BCR185E6327 BCR185E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C579BD09108469&compId=BCR185.pdf?ci_sign=8b5a427d7e89c96143962f50eb7401ae7f4fadba Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 1650 Stücke:
Lieferzeit 14-21 Tag (e)
1117+0.064 EUR
1238+0.058 EUR
1401+0.051 EUR
1619+0.044 EUR
1650+0.043 EUR
Mindestbestellmenge: 1117
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BCR135SH6327 BCR135SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Frequency: 150MHz
Type of transistor: NPN x2
Polarisation: bipolar
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
auf Bestellung 2930 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
589+0.12 EUR
770+0.093 EUR
820+0.087 EUR
Mindestbestellmenge: 385
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BCR135WH6327 BCR135WH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Frequency: 150MHz
Type of transistor: NPN
Polarisation: bipolar
Case: SOT323
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Produkt ist nicht verfügbar
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BSS205NH6327XTSA1 BSS205NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7C89A92FB310B&compId=BSS205NH6327XTSA1.pdf?ci_sign=9e21e254c345f4f5bd15a7d2d6784307e5ed3846 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 85mΩ
Drain current: 2.5A
Power dissipation: 0.5W
Gate-source voltage: ±12V
Drain-source voltage: 20V
auf Bestellung 5989 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
228+0.31 EUR
275+0.26 EUR
379+0.19 EUR
489+0.15 EUR
610+0.12 EUR
910+0.079 EUR
962+0.074 EUR
Mindestbestellmenge: 179
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BSS806NH6327XTSA1 BSS806NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A83CD3DEEF310B&compId=BSS806NH6327XTSA1.pdf?ci_sign=0a43cefa63a012994060e8c30caf4f990ca0f5cc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 82mΩ
Drain current: 2.3A
Power dissipation: 0.5W
Gate-source voltage: ±8V
Drain-source voltage: 20V
auf Bestellung 3303 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
317+0.23 EUR
453+0.16 EUR
524+0.14 EUR
1174+0.061 EUR
1241+0.058 EUR
Mindestbestellmenge: 200
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BSS806NEH6327XTSA1 BSS806NEH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A835FDBDAD310B&compId=BSS806NEH6327XTSA1.pdf?ci_sign=6c6768b26d5644a3eb003bb38a7a7b5d3fc7db0a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2171 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
325+0.22 EUR
382+0.19 EUR
530+0.13 EUR
599+0.12 EUR
910+0.079 EUR
962+0.074 EUR
Mindestbestellmenge: 209
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IDH12SG60C IDH12SG60C INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB9852D0F02CFA8&compId=IDH12SG60C-DTE.pdf?ci_sign=948552552f4302256376ce48163a89520e60e971 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; PG-TO220-2; Ir: 1uA
Type of diode: Schottky rectifying
Case: PG-TO220-2
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. forward impulse current: 59A
Kind of package: tube
Leakage current: 1µA
Power dissipation: 125W
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.93 EUR
27+2.72 EUR
28+2.56 EUR
Mindestbestellmenge: 19
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IDH08SG60CXKSA2 IDH08SG60CXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EABC0B3CE5C469&compId=IDH08SG60C.pdf?ci_sign=67eb5deb2a940f929244edb670b052658efcbe09 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; PG-TO220-2; 100W
Type of diode: Schottky rectifying
Case: PG-TO220-2
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. forward impulse current: 42A
Kind of package: tube
Leakage current: 0.6µA
Power dissipation: 100W
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.41 EUR
26+2.83 EUR
27+2.67 EUR
Mindestbestellmenge: 14
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IPP030N06NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.96 EUR
Mindestbestellmenge: 100
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BSZ120P03NS3GATMA1 BSZ120P03NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A54B51EC71CC&compId=BSZ120P03NS3GATMA1-dte.pdf?ci_sign=e0c32f32dc5dbc17c7be9bd8360258dbaa5dcb5d Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 52W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICE3A1065ELJFKLA1 INFINEON TECHNOLOGIES Datasheet_ICE3A1065ELJ_v20_2Sep08.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a30431c69a49d011c93b934c0056d Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.92 EUR
Mindestbestellmenge: 50
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IPB100N04S303ATMA1 IPB100N04S303ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA3248C8A286143&compId=IPB100N04S303.pdf?ci_sign=2b702d83a25df2bc0e3b44f941578f4d31d91f02 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Case: PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ T
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 110nC
On-state resistance: 2.5mΩ
Power dissipation: 214W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5-1R9 IPC100N04S5-1R9 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA5216505FA74A&compId=IPC100N04S51R9.pdf?ci_sign=2871d189f489fc547c6611456c441bcb643cc716 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 65nC
On-state resistance: 1.9mΩ
Power dissipation: 100W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
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IPC100N04S5-1R2 IPC100N04S5-1R2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA49771D5F674A&compId=IPC100N04S51R2.pdf?ci_sign=5f94a9b9fd21e204afc56b8d21626078719b2d53 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 131nC
On-state resistance: 1.2mΩ
Power dissipation: 150W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
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IPC100N04S5-1R7 IPC100N04S5-1R7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA4DBB5DE0274A&compId=IPC100N04S51R7.pdf?ci_sign=98c11ae58317b34a2cf3add2c3722b43b2bd6908 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 83nC
On-state resistance: 1.7mΩ
Power dissipation: 115W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5L-1R1 IPC100N04S5L-1R1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA5A929452E74A&compId=IPC100N04S5L1R1.pdf?ci_sign=f8bb6dfa7d8c8c00542f9aa706c257086e3c08b3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 0.14µC
On-state resistance: 1.1mΩ
Power dissipation: 150W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5L-1R5 IPC100N04S5L-1R5 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA5D5ED457274A&compId=IPC100N04S5L1R5.pdf?ci_sign=fc50b98bc7916b1e7b88e330071377b25f0f81f2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 95nC
On-state resistance: 1.5mΩ
Power dissipation: 115W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5L-1R9 IPC100N04S5L-1R9 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA629D2730274A&compId=IPC100N04S5L1R9.pdf?ci_sign=3ce2e74ea43197018f2255b595c01b4158e75dcc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 81nC
On-state resistance: 1.9mΩ
Power dissipation: 100W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5L-2R6 IPC100N04S5L-2R6 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA66647F3E474A&compId=IPC100N04S5L2R6.pdf?ci_sign=a9ba21c0f1b95979b0e81c2e0b59aa5e9169c864 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 55nC
On-state resistance: 2.6mΩ
Power dissipation: 75W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC100N04S6L014ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 6
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 65nC
On-state resistance: 2mΩ
Power dissipation: 100W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC100N04S6L020ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 6
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 46nC
On-state resistance: 2.7mΩ
Power dissipation: 75W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD100N04S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 100A; 150W; DPAK; automotive industry
Case: DPAK
Mounting: SMD
Technology: MOSFET
Polarisation: N
Type of transistor: N-MOSFET
Electrical mounting: SMT
Gate charge: 118nC
On-state resistance: 1.7mΩ
Power dissipation: 150W
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 100A
Application: automotive industry
Kind of channel: enhancement
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IRS2101STRPBF INFINEON TECHNOLOGIES infineon-irs2101-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
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IRFB4020PBFXKMA1 INFINEON TECHNOLOGIES infineon-irfb4020-datasheet-en.pdf?fileId=5546d462533600a4015356158ffd1e05 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS5016-2EKA BTS5016-2EKA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986CDEB37B6469&compId=BTS5016-2EKA.pdf?ci_sign=83c8bc9d42f43a784bc704bee2630f9102c3dd63 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 28mΩ
Technology: PROFET™+ 12V
Supply voltage: 5...28V DC
Produkt ist nicht verfügbar
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CY8C29666-24LTXI INFINEON TECHNOLOGIES Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; Core: 8-bit
Type of integrated circuit: PSoC microcontroller
Kind of core: 8-bit
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CY8C20396A-24LQXI INFINEON TECHNOLOGIES Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; Core: 8-bit
Clock frequency: 24MHz
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Kind of core: 8-bit
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CY8C20546A-24PVXI INFINEON TECHNOLOGIES download Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP48; 1.71÷5.5VDC; Core: 8-bit
Clock frequency: 24MHz
Type of integrated circuit: PSoC microcontroller
Case: SSOP48
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Kind of core: 8-bit
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CY7C1440KV33-250BZXI INFINEON TECHNOLOGIES Infineon-CY7C1440KV33_CY7C1442KV33_CY7C1440KVE33_36-Mbit_(1_M_36_2_M_18)_Pipelined_Sync_SRAM_(With_ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecee95a4967&utm_source=cypress&utm_medium=referral&utm_campaign=20211 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; -40÷85°C
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Frequency: 250MHz
Kind of package: in-tray
Case: FBGA165
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CY7C1480BV33-250BZI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 250MHz
Kind of package: in-tray
Case: FBGA165
Produkt ist nicht verfügbar
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IPA60R125P6XKSA1 IPA60R125P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D3ADBD8771BF&compId=IPA60R125P6-DTE.pdf?ci_sign=509a3cf4af1c085ef703fbfb7483c4f16578c9d6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB123N10N3GATMA1 IPB123N10N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BADF5E3B00A11C&compId=IPB123N10N3G-DTE.pdf?ci_sign=18749469d85cdd8fcc825ad705ac3b9f22b73cd7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Power dissipation: 94W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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AIHD04N60RATMA1 AIHD04N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA427AB6E31820&compId=AIHD04N60R.pdf?ci_sign=dcd0fb202ad805a55910c32a432f29f8924ef561 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Case: DPAK
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: SMD
Technology: TRENCHSTOP™ RC
Turn-on time: 22ns
Gate charge: 27nC
Turn-off time: 317ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Power dissipation: 75W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Produkt ist nicht verfügbar
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AIHD04N60RFATMA1 AIHD04N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA47033238F820&compId=AIHD04N60RF.pdf?ci_sign=50811ec2801f1a9e015cf51dff02af3193b8f3d1 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Case: DPAK
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: SMD
Technology: TRENCHSTOP™
Turn-on time: 19ns
Gate charge: 27nC
Turn-off time: 153ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Power dissipation: 75W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IPD068N10N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD068N10N3G-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1eb7aeb615d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 90A; 150W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 150W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Gate charge: 51nC
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BCR112 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C047218843DAF1A6F5005056AB5A8F&compId=bcr112series.pdf?ci_sign=d5bf832fad7f3133f513aabca068cb74703f607c Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Produkt ist nicht verfügbar
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IPD65R250E6XTMA1 IPD65R250E6XTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8D36BB609B1BF&compId=IPD65R250E6-DTE.pdf?ci_sign=1e26743aef67611033c5d4bb27513635a50357d7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.1A
On-state resistance: 0.25Ω
Power dissipation: 208W
Gate-source voltage: ±20V
Case: PG-TO252-3
Produkt ist nicht verfügbar
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BSP603S2L BSP603S2L INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5949351EA6CD16469&compId=BSP603S2L.pdf?ci_sign=f8f722eb04392bc5053d8ee981b89e1032944b05 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.2A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC027N06LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC027N06LS5-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101596e1c881234d6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 84A; Idm: 400A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Pulsed drain current: 400A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS®
Produkt ist nicht verfügbar
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TLE4268GXUMA2 TLE4268GXUMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED783FA94C5CA18E259&compId=TLE4268G.pdf?ci_sign=206b89d3d44db8a7ad9e5b1d89050884c81d51d0 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.15A
Case: PG-DSO-20
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...45V
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40+1.8 EUR
44+1.63 EUR
61+1.19 EUR
65+1.12 EUR
Mindestbestellmenge: 40
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ESD230B1W0201E6327XTSA1 INFINEON TECHNOLOGIES Infineon-ESD230-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c031740b5934 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 56W; 6.1V; 3A; bidirectional; 0201,0603; Ch: 1; -55÷125°C
Type of diode: TVS
Peak pulse power dissipation: 56W
Max. off-state voltage: 5.5V
Breakdown voltage: 6.1V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: 0201; 0603
Mounting: SMD
Leakage current: 0.1µA
Application: general purpose
Number of channels: 1
Operating temperature: -55...125°C
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15000+0.033 EUR
Mindestbestellmenge: 15000
Im Einkaufswagen  Stück im Wert von  UAH
BAT68E6327HTSA1 BAT68E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E053C1DBDA0469&compId=BAT6804E6327HTSA1.pdf?ci_sign=48c3ec698637286826c432ea3d7330d5dff54f64 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 8V; 0.13A; 150mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: single diode
Power dissipation: 0.15W
auf Bestellung 2733 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
329+0.22 EUR
376+0.19 EUR
447+0.16 EUR
500+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R1K5PFD7SAUMA1 Infineon-IPD60R1K5PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e225df2d46744
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 2.2A; Idm: 6A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 2.892Ω
Drain current: 2.2A
Pulsed drain current: 6A
Power dissipation: 22W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
Produkt ist nicht verfügbar
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IPD60R2K0C6ATMA1 Infineon-IPD60R2K0C6-DS-v02_01-EN.pdf?fileId=db3a304329a0f6ee012a0dfc6b8b064f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.5A; Idm: 6A; 22.3W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 2Ω
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 22.3W
Gate-source voltage: ±20V
Technology: CoolMOS™ C6
Drain-source voltage: 600V
Case: PG-TO252
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R2K0PFD7SAUMA1 Infineon-IPD60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e226704e76747
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 1.9A; 20W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 3.824Ω
Drain current: 1.9A
Pulsed drain current: 4.5A
Power dissipation: 20W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
Produkt ist nicht verfügbar
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IPD60R380C6ATMA1 Infineon-IPD60R380C6-DS-v02_02-EN.pdf?fileId=db3a30433ecb86d4013ed661f42d23f2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; Idm: 30A; 83W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.38Ω
Drain current: 6.7A
Pulsed drain current: 30A
Power dissipation: 83W
Gate-source voltage: ±20V
Technology: CoolMOS™ C6
Drain-source voltage: 600V
Case: PG-TO252
Produkt ist nicht verfügbar
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IPD60R385CPATMA1 Infineon-IPD60R385CP-DS-v02_04-EN.pdf?fileId=db3a30432313ff5e012385595fd16763
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.385Ω
Drain current: 5.7A
Pulsed drain current: 27A
Power dissipation: 83W
Gate-source voltage: ±20V
Technology: CoolMOS™ CP
Drain-source voltage: 600V
Case: PG-TO252
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R3K3C6ATMA1 Infineon-IPD60R3K3C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129f96874465b3a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 3.3Ω
Drain current: 1.1A
Pulsed drain current: 4A
Power dissipation: 18.1W
Gate-source voltage: ±20V
Technology: CoolMOS™ C6
Drain-source voltage: 600V
Case: PG-TO252
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R400CEAUMA1 Infineon-IPD60R400CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c83667001f0c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.4Ω
Drain current: 9.3A
Pulsed drain current: 30A
Power dissipation: 112W
Gate-source voltage: ±20V
Technology: CoolMOS™ CE
Drain-source voltage: 600V
Case: PG-TO252
Produkt ist nicht verfügbar
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IPD60R600C6ATMA1 Infineon-IPD60R600C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eef7f5937259b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 19A; 63W; PG-TO252
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 0.6Ω
Drain current: 4.6A
Pulsed drain current: 19A
Power dissipation: 63W
Gate-source voltage: ±20V
Technology: CoolMOS™ CE
Drain-source voltage: 600V
Case: PG-TO252
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R600PFD7SAUMA1 Infineon-IPD60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed61c45f839e9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 4A; Idm: 14A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
On-state resistance: 1.219Ω
Drain current: 4A
Pulsed drain current: 14A
Power dissipation: 31W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: PG-TO252-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R1K0CEAUMA1 Infineon-IPD60R1K0CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7bf4c481e94
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 6.8A; 61W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Mounting: SMD
Electrical mounting: SMT
Gate charge: 13nC
On-state resistance: 1Ω
Drain current: 6.8A
Power dissipation: 61W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK; TO252
auf Bestellung 17500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.33 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R2K1CEAUMA1 Infineon-IPD60R2K1CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c7e404601eaa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 3.7A; 38W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 6.7nC
On-state resistance: 2.1Ω
Drain current: 3.7A
Power dissipation: 38W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.25 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R180P7ATMA1 Infineon-IPD60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bd338b83cb3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.37 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R1K5CEAUMA1 Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 5A; 49W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 9.4nC
On-state resistance: 1.5Ω
Drain current: 5A
Power dissipation: 49W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK; TO252
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.28 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R380P6ATMA1 Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 10.6A; 83W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Mounting: SMD
Electrical mounting: SMT
Gate charge: 19nC
On-state resistance: 0.38Ω
Drain current: 10.6A
Power dissipation: 83W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.69 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R3K4CEAUMA1 Infineon-IPD60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537fcd09123a87
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 2.6A; 29W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 4.6nC
On-state resistance: 3.17Ω
Drain current: 2.6A
Power dissipation: 29W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.22 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R600P6ATMA1 DS_IPx60R600P6_2_1.pdf?fileId=db3a30433f2e70c5013f3862b5622681
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 7.3A; 63W; DPAK; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Mounting: SMD
Electrical mounting: SMT
Gate charge: 12nC
On-state resistance: 0.6Ω
Drain current: 7.3A
Power dissipation: 63W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.51 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R800CEAUMA1 IPD%2CIPA60R800CE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 8.4A; 74W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: N
Mounting: SMD
Electrical mounting: SMT
Gate charge: 17.2nC
On-state resistance: 0.8Ω
Drain current: 8.4A
Power dissipation: 74W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK; TO252
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.38 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R950C6ATMA1 Infineon-IPD60R950C6-DS-v02_02-en.pdf?fileId=db3a30433ee50ba8013ef00bb8dd26c6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.65 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
BCR185E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C579BD09108469&compId=BCR185.pdf?ci_sign=8b5a427d7e89c96143962f50eb7401ae7f4fadba
BCR185E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 1650 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1117+0.064 EUR
1238+0.058 EUR
1401+0.051 EUR
1619+0.044 EUR
1650+0.043 EUR
Mindestbestellmenge: 1117
Im Einkaufswagen  Stück im Wert von  UAH
BCR135SH6327 pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9
BCR135SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Frequency: 150MHz
Type of transistor: NPN x2
Polarisation: bipolar
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
auf Bestellung 2930 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
589+0.12 EUR
770+0.093 EUR
820+0.087 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BCR135WH6327 pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9
BCR135WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Frequency: 150MHz
Type of transistor: NPN
Polarisation: bipolar
Case: SOT323
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS205NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7C89A92FB310B&compId=BSS205NH6327XTSA1.pdf?ci_sign=9e21e254c345f4f5bd15a7d2d6784307e5ed3846
BSS205NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 85mΩ
Drain current: 2.5A
Power dissipation: 0.5W
Gate-source voltage: ±12V
Drain-source voltage: 20V
auf Bestellung 5989 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
228+0.31 EUR
275+0.26 EUR
379+0.19 EUR
489+0.15 EUR
610+0.12 EUR
910+0.079 EUR
962+0.074 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
BSS806NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A83CD3DEEF310B&compId=BSS806NH6327XTSA1.pdf?ci_sign=0a43cefa63a012994060e8c30caf4f990ca0f5cc
BSS806NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 82mΩ
Drain current: 2.3A
Power dissipation: 0.5W
Gate-source voltage: ±8V
Drain-source voltage: 20V
auf Bestellung 3303 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
317+0.23 EUR
453+0.16 EUR
524+0.14 EUR
1174+0.061 EUR
1241+0.058 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
BSS806NEH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A835FDBDAD310B&compId=BSS806NEH6327XTSA1.pdf?ci_sign=6c6768b26d5644a3eb003bb38a7a7b5d3fc7db0a
BSS806NEH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2171 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
325+0.22 EUR
382+0.19 EUR
530+0.13 EUR
599+0.12 EUR
910+0.079 EUR
962+0.074 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
IDH12SG60C pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB9852D0F02CFA8&compId=IDH12SG60C-DTE.pdf?ci_sign=948552552f4302256376ce48163a89520e60e971
IDH12SG60C
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; PG-TO220-2; Ir: 1uA
Type of diode: Schottky rectifying
Case: PG-TO220-2
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. forward impulse current: 59A
Kind of package: tube
Leakage current: 1µA
Power dissipation: 125W
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
27+2.72 EUR
28+2.56 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IDH08SG60CXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EABC0B3CE5C469&compId=IDH08SG60C.pdf?ci_sign=67eb5deb2a940f929244edb670b052658efcbe09
IDH08SG60CXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; PG-TO220-2; 100W
Type of diode: Schottky rectifying
Case: PG-TO220-2
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. forward impulse current: 42A
Kind of package: tube
Leakage current: 0.6µA
Power dissipation: 100W
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.41 EUR
26+2.83 EUR
27+2.67 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IPP030N06NF2SAKMA1 Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.96 EUR
Mindestbestellmenge: 100
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BSZ120P03NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A54B51EC71CC&compId=BSZ120P03NS3GATMA1-dte.pdf?ci_sign=e0c32f32dc5dbc17c7be9bd8360258dbaa5dcb5d
BSZ120P03NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 52W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICE3A1065ELJFKLA1 Datasheet_ICE3A1065ELJ_v20_2Sep08.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a30431c69a49d011c93b934c0056d
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.92 EUR
Mindestbestellmenge: 50
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IPB100N04S303ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA3248C8A286143&compId=IPB100N04S303.pdf?ci_sign=2b702d83a25df2bc0e3b44f941578f4d31d91f02
IPB100N04S303ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Case: PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ T
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 110nC
On-state resistance: 2.5mΩ
Power dissipation: 214W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5-1R9 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA5216505FA74A&compId=IPC100N04S51R9.pdf?ci_sign=2871d189f489fc547c6611456c441bcb643cc716
IPC100N04S5-1R9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 65nC
On-state resistance: 1.9mΩ
Power dissipation: 100W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5-1R2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA49771D5F674A&compId=IPC100N04S51R2.pdf?ci_sign=5f94a9b9fd21e204afc56b8d21626078719b2d53
IPC100N04S5-1R2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 131nC
On-state resistance: 1.2mΩ
Power dissipation: 150W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5-1R7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA4DBB5DE0274A&compId=IPC100N04S51R7.pdf?ci_sign=98c11ae58317b34a2cf3add2c3722b43b2bd6908
IPC100N04S5-1R7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 83nC
On-state resistance: 1.7mΩ
Power dissipation: 115W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5L-1R1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA5A929452E74A&compId=IPC100N04S5L1R1.pdf?ci_sign=f8bb6dfa7d8c8c00542f9aa706c257086e3c08b3
IPC100N04S5L-1R1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 0.14µC
On-state resistance: 1.1mΩ
Power dissipation: 150W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5L-1R5 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA5D5ED457274A&compId=IPC100N04S5L1R5.pdf?ci_sign=fc50b98bc7916b1e7b88e330071377b25f0f81f2
IPC100N04S5L-1R5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 95nC
On-state resistance: 1.5mΩ
Power dissipation: 115W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5L-1R9 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA629D2730274A&compId=IPC100N04S5L1R9.pdf?ci_sign=3ce2e74ea43197018f2255b595c01b4158e75dcc
IPC100N04S5L-1R9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 81nC
On-state resistance: 1.9mΩ
Power dissipation: 100W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5L-2R6 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA66647F3E474A&compId=IPC100N04S5L2R6.pdf?ci_sign=a9ba21c0f1b95979b0e81c2e0b59aa5e9169c864
IPC100N04S5L-2R6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 55nC
On-state resistance: 2.6mΩ
Power dissipation: 75W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC100N04S6L014ATMA1 Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 6
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 65nC
On-state resistance: 2mΩ
Power dissipation: 100W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC100N04S6L020ATMA1 Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 6
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 46nC
On-state resistance: 2.7mΩ
Power dissipation: 75W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD100N04S402ATMA1 Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 100A; 150W; DPAK; automotive industry
Case: DPAK
Mounting: SMD
Technology: MOSFET
Polarisation: N
Type of transistor: N-MOSFET
Electrical mounting: SMT
Gate charge: 118nC
On-state resistance: 1.7mΩ
Power dissipation: 150W
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 100A
Application: automotive industry
Kind of channel: enhancement
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.04 EUR
Mindestbestellmenge: 2500
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IRS2101STRPBF infineon-irs2101-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.82 EUR
Mindestbestellmenge: 2500
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IRFB4020PBFXKMA1 infineon-irfb4020-datasheet-en.pdf?fileId=5546d462533600a4015356158ffd1e05
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS5016-2EKA pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986CDEB37B6469&compId=BTS5016-2EKA.pdf?ci_sign=83c8bc9d42f43a784bc704bee2630f9102c3dd63
BTS5016-2EKA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 28mΩ
Technology: PROFET™+ 12V
Supply voltage: 5...28V DC
Produkt ist nicht verfügbar
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CY8C29666-24LTXI Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; Core: 8-bit
Type of integrated circuit: PSoC microcontroller
Kind of core: 8-bit
auf Bestellung 337 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
260+16.47 EUR
Mindestbestellmenge: 260
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CY8C20396A-24LQXI Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; Core: 8-bit
Clock frequency: 24MHz
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Kind of core: 8-bit
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
490+7.98 EUR
Mindestbestellmenge: 490
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CY8C20546A-24PVXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP48; 1.71÷5.5VDC; Core: 8-bit
Clock frequency: 24MHz
Type of integrated circuit: PSoC microcontroller
Case: SSOP48
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Kind of core: 8-bit
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+6.44 EUR
Mindestbestellmenge: 30
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CY7C1440KV33-250BZXI Infineon-CY7C1440KV33_CY7C1442KV33_CY7C1440KVE33_36-Mbit_(1_M_36_2_M_18)_Pipelined_Sync_SRAM_(With_ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecee95a4967&utm_source=cypress&utm_medium=referral&utm_campaign=20211
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; -40÷85°C
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Frequency: 250MHz
Kind of package: in-tray
Case: FBGA165
Produkt ist nicht verfügbar
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CY7C1480BV33-250BZI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 250MHz
Kind of package: in-tray
Case: FBGA165
Produkt ist nicht verfügbar
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IPA60R125P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D3ADBD8771BF&compId=IPA60R125P6-DTE.pdf?ci_sign=509a3cf4af1c085ef703fbfb7483c4f16578c9d6
IPA60R125P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB123N10N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BADF5E3B00A11C&compId=IPB123N10N3G-DTE.pdf?ci_sign=18749469d85cdd8fcc825ad705ac3b9f22b73cd7
IPB123N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Power dissipation: 94W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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AIHD04N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA427AB6E31820&compId=AIHD04N60R.pdf?ci_sign=dcd0fb202ad805a55910c32a432f29f8924ef561
AIHD04N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Case: DPAK
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: SMD
Technology: TRENCHSTOP™ RC
Turn-on time: 22ns
Gate charge: 27nC
Turn-off time: 317ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Power dissipation: 75W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Produkt ist nicht verfügbar
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AIHD04N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA47033238F820&compId=AIHD04N60RF.pdf?ci_sign=50811ec2801f1a9e015cf51dff02af3193b8f3d1
AIHD04N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Case: DPAK
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: SMD
Technology: TRENCHSTOP™
Turn-on time: 19ns
Gate charge: 27nC
Turn-off time: 153ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Power dissipation: 75W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IPD068N10N3GATMA1 Infineon-IPD068N10N3G-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1eb7aeb615d1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 90A; 150W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 150W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Gate charge: 51nC
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.27 EUR
Mindestbestellmenge: 2500
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BCR112 pVersion=0046&contRep=ZT&docId=E1C047218843DAF1A6F5005056AB5A8F&compId=bcr112series.pdf?ci_sign=d5bf832fad7f3133f513aabca068cb74703f607c
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Produkt ist nicht verfügbar
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IPD65R250E6XTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8D36BB609B1BF&compId=IPD65R250E6-DTE.pdf?ci_sign=1e26743aef67611033c5d4bb27513635a50357d7
IPD65R250E6XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Technology: CoolMOS™
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.1A
On-state resistance: 0.25Ω
Power dissipation: 208W
Gate-source voltage: ±20V
Case: PG-TO252-3
Produkt ist nicht verfügbar
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BSP603S2L pVersion=0046&contRep=ZT&docId=005056AB752F1EE5949351EA6CD16469&compId=BSP603S2L.pdf?ci_sign=f8f722eb04392bc5053d8ee981b89e1032944b05
BSP603S2L
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.2A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC027N06LS5ATMA1 Infineon-BSC027N06LS5-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101596e1c881234d6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 84A; Idm: 400A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Pulsed drain current: 400A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS®
Produkt ist nicht verfügbar
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TLE4268GXUMA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED783FA94C5CA18E259&compId=TLE4268G.pdf?ci_sign=206b89d3d44db8a7ad9e5b1d89050884c81d51d0
TLE4268GXUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.15A
Case: PG-DSO-20
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...45V
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.8 EUR
44+1.63 EUR
61+1.19 EUR
65+1.12 EUR
Mindestbestellmenge: 40
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ESD230B1W0201E6327XTSA1 Infineon-ESD230-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c031740b5934
Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 56W; 6.1V; 3A; bidirectional; 0201,0603; Ch: 1; -55÷125°C
Type of diode: TVS
Peak pulse power dissipation: 56W
Max. off-state voltage: 5.5V
Breakdown voltage: 6.1V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: 0201; 0603
Mounting: SMD
Leakage current: 0.1µA
Application: general purpose
Number of channels: 1
Operating temperature: -55...125°C
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.033 EUR
Mindestbestellmenge: 15000
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BAT68E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E053C1DBDA0469&compId=BAT6804E6327HTSA1.pdf?ci_sign=48c3ec698637286826c432ea3d7330d5dff54f64
BAT68E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 8V; 0.13A; 150mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: single diode
Power dissipation: 0.15W
auf Bestellung 2733 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
329+0.22 EUR
376+0.19 EUR
447+0.16 EUR
500+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 278
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