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CY7C1370KV33-167AXC INFINEON TECHNOLOGIES Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_ Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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CY7C1370KV33-167AXI INFINEON TECHNOLOGIES Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_ Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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ITS4200SMEPHUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDD88D59151EC20E0D2&compId=ITS4200SMEP.pdf?ci_sign=9971d137799632d5ce284a6e47638746ef46beec Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4
Number of channels: 1
Output current: 1.4A
Mounting: SMD
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: SOT223-4
Operating temperature: -40...125°C
Technology: Industrial PROFET
On-state resistance: 0.15Ω
Kind of integrated circuit: high-side
Supply voltage: 11...45V DC
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SPD06N60C3ATMA1 INFINEON TECHNOLOGIES SPD06N60C3_rev+2+1.pdf?fileId=db3a30433f1b26e8013f1de2f997013c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 6.2A; 74W; DPAK; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 600V
Drain current: 6.2A
Power dissipation: 74W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 0.68Ω
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.82 EUR
Mindestbestellmenge: 2500
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IFF450B12ME4PB11BPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFFC2DCB6C4F3D1&compId=IFF450B12ME4PB11.pdf?ci_sign=c9d3db6b276df40fc2814b42a9a6055838d01d84 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Application: for UPS; Inverter; motors; photovoltaics
Topology: IGBT half-bridge; NTC thermistor
Technology: EconoDUAL™ 3
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Case: AG-ECONOD-6
Produkt ist nicht verfügbar
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2EDL23N06PJXUMA1 2EDL23N06PJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD85B5CF77038BF&compId=2EDL23x06xx.pdf?ci_sign=b1ad70b6d943ae40ef982d8b7da102dac65c5aea Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; -2.5÷1.8A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-14
Output current: -2.5...1.8A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
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IPA093N06N3GXKSA1 IPA093N06N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E99F44220F611C&compId=IPA093N06N3G-DTE.pdf?ci_sign=87044a85167c1e9177d48340fcf91e0c88be2e0d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Kind of package: tube
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 9.3mΩ
Power dissipation: 33W
Drain current: 43A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD053N06NATMA1 IPD053N06NATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A698E669ECC2211C&compId=IPD053N06N-DTE.pdf?ci_sign=c387f26976ad22f24751fba530dfc2fd71aed62d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB013N06NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB013N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67b6253b24 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 60V; 198A; 300W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Technology: SiC
Drain-source voltage: 60V
Drain current: 198A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 203nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
800+2.63 EUR
Mindestbestellmenge: 800
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IPD033N06NATMA1 INFINEON TECHNOLOGIES Infineon-IPD033N06N-DS-v02_00-EN.pdf?fileId=5546d4625b62cd8a015ba517c34e6629 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 90A; 107W; DPAK; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 107W
Case: DPAK
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 2500 Stücke:
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2500+1.1 EUR
Mindestbestellmenge: 2500
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IRLL024ZTRPBF IRLL024ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227AFB9D7DF4F1A303005056AB0C4F&compId=irll024zpbf.pdf?ci_sign=0b4e180c4fd58d02cd536dccae36d45fc3c30fc0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 40A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Pulsed drain current: 40A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2029 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
146+0.49 EUR
Mindestbestellmenge: 139
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IPD90N03S4L02ATMA1 IPD90N03S4L02ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA554F49B58E143&compId=IPD90N03S4L02.pdf?ci_sign=acd316fd8741a95f752806ce832d01a4fa19919a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 90A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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BCW66KFE6327 BCW66KFE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C53096142FA469&compId=BCW66K.pdf?ci_sign=dd3529218f8fb7c2f762685f8b56d2932dc1c672 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Produkt ist nicht verfügbar
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BCW66KGE6327HTSA1 INFINEON TECHNOLOGIES bcw66.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca389011547504ebe1a07 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 800mA; SC59; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Case: SC59
Current gain: 160
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
auf Bestellung 105000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.055 EUR
Mindestbestellmenge: 3000
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IPB017N08N5ATMA1 IPB017N08N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA73AB08EF811C&compId=IPB017N08N5-DTE.pdf?ci_sign=7307f2b75785faf784f6ce903b0ce2fffffbbf9a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
18+3.99 EUR
20+3.59 EUR
100+3.32 EUR
250+3.17 EUR
500+2.86 EUR
1000+2.7 EUR
Mindestbestellmenge: 18
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PVD1354NPBF INFINEON TECHNOLOGIES pvd13n.pdf?fileId=5546d462533600a401535683b097292f Category: Relays - Unclassified
Description: PVD1354NPBF
auf Bestellung 3884 Stücke:
Lieferzeit 14-21 Tag (e)
50+7.97 EUR
Mindestbestellmenge: 50
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PVD1352NPBF INFINEON TECHNOLOGIES pvd13n.pdf?fileId=5546d462533600a401535683b097292f Category: Relays - Unclassified
Description: PVD1352NPBF
auf Bestellung 1746 Stücke:
Lieferzeit 14-21 Tag (e)
50+6.21 EUR
Mindestbestellmenge: 50
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PVD1352NSPBF INFINEON TECHNOLOGIES pvd13n.pdf?fileId=5546d462533600a401535683b097292f Category: One Phase Solid State Relays
Description: Relay: solid state; Ucntrl: 1.2VDC; Icntrl max: 25mA; 550mA; SMT
Type of relay: solid state
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 550mA
Mounting: SMT
Case: SMD8
Body dimensions: 9.4x6.5x3.9mm
Leads: Gull Wing
Insulation voltage: 4kV
Operating temperature: -40...85°C
auf Bestellung 1026 Stücke:
Lieferzeit 14-21 Tag (e)
50+7.29 EUR
Mindestbestellmenge: 50
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PVD1354NSPBF INFINEON TECHNOLOGIES pvd13n.pdf?fileId=5546d462533600a401535683b097292f Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.25VDC; Icntrl max: 25mA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.25V DC
Control current max.: 25mA
Max. operating current: 550mA
Mounting: SMT
Case: SMD8
Body dimensions: 9.4x6.5x3.9mm
Leads: Gull Wing
Insulation voltage: 4kV
Operating temperature: -40...85°C
auf Bestellung 3500 Stücke:
Lieferzeit 14-21 Tag (e)
50+6.76 EUR
Mindestbestellmenge: 50
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DD435N34K DD435N34K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9FAE37B07C469&compId=DD435N40K.pdf?ci_sign=d36d02997142022fb2a1ac16c54d582b94394f46 Category: Diode modules
Description: Module: diode; double series; 3.4kV; If: 435A; BG-PB60-1; screw
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 0.84V
Load current: 435A
Max. off-state voltage: 3.4kV
Max. forward impulse current: 14.5kA
Case: BG-PB60-1
Type of semiconductor module: diode
Semiconductor structure: double series
Produkt ist nicht verfügbar
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DD435N36K DD435N36K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9FAE37B07C469&compId=DD435N40K.pdf?ci_sign=d36d02997142022fb2a1ac16c54d582b94394f46 Category: Diode modules
Description: Module: diode; double series; 3.6kV; If: 435A; BG-PB60-1; screw
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 0.84V
Load current: 435A
Max. off-state voltage: 3.6kV
Max. forward impulse current: 14.5kA
Case: BG-PB60-1
Type of semiconductor module: diode
Semiconductor structure: double series
Produkt ist nicht verfügbar
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DD435N40K DD435N40K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9FAE37B07C469&compId=DD435N40K.pdf?ci_sign=d36d02997142022fb2a1ac16c54d582b94394f46 Category: Diode modules
Description: Module: diode; double series; 4kV; If: 435A; BG-PB60-1; Ufmax: 0.84V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 0.84V
Load current: 435A
Max. off-state voltage: 4kV
Max. forward impulse current: 14.5kA
Case: BG-PB60-1
Type of semiconductor module: diode
Semiconductor structure: double series
Produkt ist nicht verfügbar
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IPB068N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF1EDDD4CED60DF&compId=IPB068N20NM6ATMA1.pdf?ci_sign=c5c2d43dc60740532496c8f4ae36adfa957dce47 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 134A; Idm: 536A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 134A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 73nC
Pulsed drain current: 536A
Produkt ist nicht verfügbar
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IPP069N20NM6AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF221A1DC0D00DF&compId=IPP069N20NM6AKSA1.pdf?ci_sign=abb4d34089809af3b541f2eb29ed863271c9f84e Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 136A; Idm: 544A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 136A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 73nC
Pulsed drain current: 544A
Produkt ist nicht verfügbar
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BCR320UE6327HTSA1 BCR320UE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD8B58201AA259&compId=BCR320UE6327.pdf?ci_sign=9fa97ba168550006b9826d564fdfacf076618fb1 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Topology: single transistor
Operating voltage: 0...25V DC
Output current: 0.25A
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
auf Bestellung 758 Stücke:
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148+0.49 EUR
149+0.48 EUR
Mindestbestellmenge: 148
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BCR402U BCR402U INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C047218843F6F1A6F5005056AB5A8F&compId=bcr402u.pdf?ci_sign=e2aa470de93b164ecb20b5ac1c82fa9ec02cf215 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Topology: single transistor
Operating voltage: 1.4...40V DC
Output current: 20...65mA
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming
auf Bestellung 15 Stücke:
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15+4.76 EUR
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IKW30N65EL5XKSA1 IKW30N65EL5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5FF825DFA73D7&compId=IKW30N65EL5.pdf?ci_sign=3e84e8081f403beff14a277f197238a0c9aed21a Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 62A
Power dissipation: 114W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 44ns
Turn-off time: 359ns
Technology: TRENCHSTOP™ 5
auf Bestellung 229 Stücke:
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17+4.43 EUR
18+4.15 EUR
22+3.27 EUR
25+2.9 EUR
30+2.7 EUR
120+2.62 EUR
Mindestbestellmenge: 17
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BTS5030-1EJA BTS5030-1EJA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE4EECEAA10C259&compId=BTS5030-1EJA.pdf?ci_sign=25f2afe1cf2c7472cefa85b9ca4559e7261c2c31 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8
Supply voltage: 5...28V DC
Case: PG-DSO-8
Mounting: SMD
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Technology: PROFET™+ 12V
On-state resistance: 60mΩ
Power dissipation: 1.9W
Number of channels: 1
Output current: 4A
auf Bestellung 626 Stücke:
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22+3.29 EUR
34+2.14 EUR
37+1.94 EUR
100+1.66 EUR
250+1.63 EUR
Mindestbestellmenge: 22
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IRFR9120NTRLPBF IRFR9120NTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C58A9DBDE8F1A303005056AB0C4F&compId=irfr9120npbf.pdf?ci_sign=97754911db563eff748ba770e7a42e35041cc7f2 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD5N25S3430ATMA1 INFINEON TECHNOLOGIES Infineon-IPD5N25S3_430-DS-v01_00-en.pdf?fileId=db3a30433b92f0e8013b9379d03b0148 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 4A; Idm: 20A; 41W
Case: PG-TO252-3-313
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
On-state resistance: 0.43Ω
Power dissipation: 41W
Drain current: 4A
Pulsed drain current: 20A
Gate-source voltage: ±20V
Drain-source voltage: 250V
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BAS5202VH6327XTSA1 BAS5202VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFB4FA9C27A469&compId=BAS5202VH6327XTSA1.pdf?ci_sign=f101896bc62890626f8fe38ee88267a1715a2131 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 45V; 0.75A; 500mW
Type of diode: Schottky rectifying
Case: SC79
Mounting: SMD
Max. off-state voltage: 45V
Load current: 0.75A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Power dissipation: 0.5W
auf Bestellung 4234 Stücke:
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179+0.4 EUR
234+0.31 EUR
264+0.27 EUR
348+0.21 EUR
391+0.18 EUR
538+0.13 EUR
1000+0.11 EUR
3000+0.1 EUR
Mindestbestellmenge: 179
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BAS5202VH6433XTMA1 INFINEON TECHNOLOGIES Infineon-BAS52SERIES-DS-v01_01-en.pdf?fileId=db3a30432d9b3066012dbc006764413f Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 45V; 750mA; 500mW
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 45V
Load current: 0.75A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.6V
Max. load current: 0.75A
Leakage current: 10µA
Max. forward impulse current: 2A
Power dissipation: 0.5W
Application: automotive industry
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10000+0.094 EUR
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ISP742RI ISP742RI INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD66FD3A01975EA&compId=ISP742RI.pdf?ci_sign=ba68272d53a12c7b7132945ea35aa7c760bc9660 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Mounting: SMD
Case: SO8
Technology: Industrial PROFET
Supply voltage: 5...34V DC
Kind of output: N-Channel
auf Bestellung 1394 Stücke:
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30+2.46 EUR
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52+1.39 EUR
100+1.32 EUR
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TLE49643KXTSA1 INFINEON TECHNOLOGIES Infineon-TLE4964_3K-DS-v01_00-en.pdf?fileId=db3a3043397219b60139779f2b9f5404 Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 3000 Stücke:
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3000+0.42 EUR
Mindestbestellmenge: 3000
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IPB017N10N5ATMA1 IPB017N10N5ATMA1 INFINEON TECHNOLOGIES IPB017N10N5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB017N06N3GATMA1 IPB017N06N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5D047724C211C&compId=IPB017N06N3G-DTE.pdf?ci_sign=208230effbcefd907be045691ad144c03c166baf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB017N10N5LFATMA1 INFINEON TECHNOLOGIES Infineon-IPB017N10N5LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b379cf73c7f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 313W; D2PAK-7; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 313W
Case: D2PAK-7
Gate-source voltage: 20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+5.05 EUR
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IPA60R120C7XKSA1 IPA60R120C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD80FB45DB9AA0C7&compId=IPA60R120C7.pdf?ci_sign=3083aa4cc297038ef65fd768dad53daafdfb3e1f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 66A; 32W; TO220FP
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 0.12Ω
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 32W
Pulsed drain current: 66A
Technology: CoolMOS™ C7
Drain-source voltage: 650V
Case: TO220FP
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ISP452 ISP452 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586989BFA79C82469&compId=ISP452.pdf?ci_sign=2061c4713e40e04fd5df07147ea159759c248e13 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 5...34V DC
On-state resistance: 0.16Ω
Technology: Industrial PROFET
Kind of output: N-Channel
auf Bestellung 207 Stücke:
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34+2.14 EUR
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BCX5216H6327XTSA1 INFINEON TECHNOLOGIES infineon-bcx51-bcx52-bcx53-ds-en.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
auf Bestellung 2000 Stücke:
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1000+0.2 EUR
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BCX5216H6433XTMA1 INFINEON TECHNOLOGIES infineon-bcx51-bcx52-bcx53-ds-en.pdf Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 4000 Stücke:
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4000+0.17 EUR
Mindestbestellmenge: 4000
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IRF9389TRPBF IRF9389TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC9C6E07FC35EA&compId=IRF9389TRPBF.pdf?ci_sign=ea3b1216efc13bc500124d935d1fdf6b8d441c11 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 35 Stücke:
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35+2.04 EUR
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BSP752T BSP752T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697A892C9B98469&compId=BSP752T.pdf?ci_sign=b5ced3c5ed460144b067c1a56ab54b4b2531568d Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
Produkt ist nicht verfügbar
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BSP752TXUMA1 INFINEON TECHNOLOGIES Infineon-BSP752T-DS-v01_01-EN.pdf?fileId=5546d46259d9a4bf015a8533f0fa778a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
Produkt ist nicht verfügbar
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BTS118D BTS118D INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF4787C35DE4745&compId=BTS118D.pdf?ci_sign=9b9db2d4e2b7ee7d791f6da8d36a09917897c1ff Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.4A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 0.1Ω
Technology: HITFET®
Output voltage: 42V
Power dissipation: 21W
Produkt ist nicht verfügbar
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BSZ520N15NS3GATMA1 BSZ520N15NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC3ECE7EAA411C&compId=BSZ520N15NS3G-DTE.pdf?ci_sign=4334bb1e8d31b9ce8d1cb4da0d0f9340350c816c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC520N15NS3GATMA1 BSC520N15NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6561A525011C&compId=BSC520N15NS3G-DTE.pdf?ci_sign=fb4d680c37f940e2565f9ae51fea56efe2625137 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB060N15N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPB060N15N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b5ca333d3364d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 150V; 136A; 250W; TO263-7; SMT
Case: TO263-7
Mounting: SMD
Type of transistor: N-MOSFET
Electrical mounting: SMT
Kind of channel: enhancement
Gate-source voltage: 20V
Gate charge: 68nC
On-state resistance: 4.8mΩ
Drain current: 136A
Power dissipation: 250W
Drain-source voltage: 150V
Technology: MOSFET
auf Bestellung 1000 Stücke:
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1000+2.7 EUR
Mindestbestellmenge: 1000
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XC8868FFI5VACFXUMA1 XC8868FFI5VACFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6C16D8DC79E28&compId=XC88X-DTE.pdf?ci_sign=d050d2878a88789e7d06e3553657479f565ee731 Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Mounting: SMD
Type of integrated circuit: microcontroller 8051
Case: PG-TQFP-48
Interface: SPI; UART x2
Integrated circuit features: watchdog
Operating temperature: -40...85°C
Number of output compare channels: 1
Number of input capture channels: 1
Supply voltage: 3...5V DC
Number of 16bit timers: 4
Number of PWM channels: 4
Number of 10bit A/D converters: 8
Memory: 1.75kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Produkt ist nicht verfügbar
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IRF9335TRPBF IRF9335TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AFCB3374F8F1A303005056AB0C4F&compId=irf9335pbf.pdf?ci_sign=75a5ae7da5bf91ec152bd1ed019fa68e31a48696 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.4A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF9358TRPBF IRF9358TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AFE6B19E50F1A303005056AB0C4F&compId=irf9358pbf.pdf?ci_sign=2603984b04ac0777b4f4d8423a7f0c4913626159 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.2A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.2A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF9362TRPBF IRF9362TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B00322F7EAF1A303005056AB0C4F&compId=irf9362pbf.pdf?ci_sign=daec17103d69b620a36fa31b8c45e333a8f32cd4 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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CY7C1480BV33-200AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
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DD160N22K DD160N22K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C86AA869E30469&compId=DD160N22K.pdf?ci_sign=89bba5a5b6017d61df8b68446cd34101842b194f Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 160A; BG-PB34-1; screw
Case: BG-PB34-1
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 160A
Max. forward impulse current: 4.6kA
Max. off-state voltage: 2.2kV
Semiconductor structure: double series
auf Bestellung 7 Stücke:
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1+269.3 EUR
3+225.25 EUR
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BSP772T BSP772T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697ACDC9066A469&compId=BSP772T.pdf?ci_sign=30fabbcc8cb7dfd515be88603b5898f2678b306f Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Technology: Classic PROFET
Supply voltage: 5...34V DC
auf Bestellung 1287 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.2 EUR
25+2.87 EUR
100+2.27 EUR
250+2.04 EUR
Mindestbestellmenge: 18
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BGSA14GN10E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Application: telecommunication
Case: TSNP10
Type of integrated circuit: RF switch
Mounting: SMD
Output configuration: SP4T
Number of channels: 4
Supply voltage: 1.8...3.6V DC
Bandwidth: 0.1...5GHz
Produkt ist nicht verfügbar
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ISO1H811GAUMA1 ISO1H811GAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE79487AD8711E72747&compId=ISO1H811G.pdf?ci_sign=6af05765db5015ce017c9f66200429b3118e9db0 Category: Interfaces others - integrated circuits
Description: IC: driver; high-side; ISOFACE™; PG-DSO-36; 625mA; Ch: 8; 11÷35VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Technology: ISOFACE™
Case: PG-DSO-36
Output current: 0.625A
Number of channels: 8
Supply voltage: 11...35V DC
Integrated circuit features: 8bit interface; galvanically isolated
Mounting: SMD
On-state resistance: 0.15Ω
Operating temperature: -25...125°C
Kind of package: reel; tape
Kind of output: N-Channel
Turn-on time: 64µs
Turn-off time: 89µs
Power dissipation: 3.3W
Produkt ist nicht verfügbar
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CY7C2245KV18-450BZXI INFINEON TECHNOLOGIES Infineon-CY7C2245KV18-450BZXI-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2b7a837b0 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 450MHz
Produkt ist nicht verfügbar
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IPD80R2K0P7ATMA1 IPD80R2K0P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA500A0526CE143&compId=IPD80R2K0P7.pdf?ci_sign=c53a33955b5e634b291666a18a0dfbe567e6a0d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 9nC
Technology: CoolMOS™ P7
Version: ESD
auf Bestellung 1462 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
83+0.87 EUR
95+0.75 EUR
107+0.67 EUR
114+0.63 EUR
Mindestbestellmenge: 66
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DD260N16K DD260N16K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586CA08F9313D8469&compId=DD260N18K.pdf?ci_sign=1a3eeda9b19c3aa4315259af2d268dad7a8056c1 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 260A
Case: BG-PB50-1
Max. forward voltage: 1.32V
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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CY7C1370KV33-167AXC Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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CY7C1370KV33-167AXI Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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ITS4200SMEPHUMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD88D59151EC20E0D2&compId=ITS4200SMEP.pdf?ci_sign=9971d137799632d5ce284a6e47638746ef46beec
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4
Number of channels: 1
Output current: 1.4A
Mounting: SMD
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: SOT223-4
Operating temperature: -40...125°C
Technology: Industrial PROFET
On-state resistance: 0.15Ω
Kind of integrated circuit: high-side
Supply voltage: 11...45V DC
Produkt ist nicht verfügbar
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SPD06N60C3ATMA1 SPD06N60C3_rev+2+1.pdf?fileId=db3a30433f1b26e8013f1de2f997013c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 6.2A; 74W; DPAK; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 600V
Drain current: 6.2A
Power dissipation: 74W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 0.68Ω
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.82 EUR
Mindestbestellmenge: 2500
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IFF450B12ME4PB11BPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFFC2DCB6C4F3D1&compId=IFF450B12ME4PB11.pdf?ci_sign=c9d3db6b276df40fc2814b42a9a6055838d01d84
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Application: for UPS; Inverter; motors; photovoltaics
Topology: IGBT half-bridge; NTC thermistor
Technology: EconoDUAL™ 3
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Case: AG-ECONOD-6
Produkt ist nicht verfügbar
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2EDL23N06PJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD85B5CF77038BF&compId=2EDL23x06xx.pdf?ci_sign=b1ad70b6d943ae40ef982d8b7da102dac65c5aea
2EDL23N06PJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; -2.5÷1.8A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-14
Output current: -2.5...1.8A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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IPA093N06N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E99F44220F611C&compId=IPA093N06N3G-DTE.pdf?ci_sign=87044a85167c1e9177d48340fcf91e0c88be2e0d
IPA093N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Kind of package: tube
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 9.3mΩ
Power dissipation: 33W
Drain current: 43A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD053N06NATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A698E669ECC2211C&compId=IPD053N06N-DTE.pdf?ci_sign=c387f26976ad22f24751fba530dfc2fd71aed62d
IPD053N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB013N06NF2SATMA1 Infineon-IPB013N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67b6253b24
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 60V; 198A; 300W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Technology: SiC
Drain-source voltage: 60V
Drain current: 198A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 203nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+2.63 EUR
Mindestbestellmenge: 800
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IPD033N06NATMA1 Infineon-IPD033N06N-DS-v02_00-EN.pdf?fileId=5546d4625b62cd8a015ba517c34e6629
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 90A; 107W; DPAK; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 107W
Case: DPAK
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.1 EUR
Mindestbestellmenge: 2500
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IRLL024ZTRPBF pVersion=0046&contRep=ZT&docId=E2227AFB9D7DF4F1A303005056AB0C4F&compId=irll024zpbf.pdf?ci_sign=0b4e180c4fd58d02cd536dccae36d45fc3c30fc0
IRLL024ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 40A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Pulsed drain current: 40A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2029 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
146+0.49 EUR
Mindestbestellmenge: 139
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IPD90N03S4L02ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA554F49B58E143&compId=IPD90N03S4L02.pdf?ci_sign=acd316fd8741a95f752806ce832d01a4fa19919a
IPD90N03S4L02ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 90A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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BCW66KFE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C53096142FA469&compId=BCW66K.pdf?ci_sign=dd3529218f8fb7c2f762685f8b56d2932dc1c672
BCW66KFE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Produkt ist nicht verfügbar
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BCW66KGE6327HTSA1 bcw66.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca389011547504ebe1a07
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 800mA; SC59; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Case: SC59
Current gain: 160
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
auf Bestellung 105000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.055 EUR
Mindestbestellmenge: 3000
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IPB017N08N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA73AB08EF811C&compId=IPB017N08N5-DTE.pdf?ci_sign=7307f2b75785faf784f6ce903b0ce2fffffbbf9a
IPB017N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.99 EUR
20+3.59 EUR
100+3.32 EUR
250+3.17 EUR
500+2.86 EUR
1000+2.7 EUR
Mindestbestellmenge: 18
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PVD1354NPBF pvd13n.pdf?fileId=5546d462533600a401535683b097292f
Hersteller: INFINEON TECHNOLOGIES
Category: Relays - Unclassified
Description: PVD1354NPBF
auf Bestellung 3884 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+7.97 EUR
Mindestbestellmenge: 50
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PVD1352NPBF pvd13n.pdf?fileId=5546d462533600a401535683b097292f
Hersteller: INFINEON TECHNOLOGIES
Category: Relays - Unclassified
Description: PVD1352NPBF
auf Bestellung 1746 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+6.21 EUR
Mindestbestellmenge: 50
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PVD1352NSPBF pvd13n.pdf?fileId=5546d462533600a401535683b097292f
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; Ucntrl: 1.2VDC; Icntrl max: 25mA; 550mA; SMT
Type of relay: solid state
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 550mA
Mounting: SMT
Case: SMD8
Body dimensions: 9.4x6.5x3.9mm
Leads: Gull Wing
Insulation voltage: 4kV
Operating temperature: -40...85°C
auf Bestellung 1026 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+7.29 EUR
Mindestbestellmenge: 50
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PVD1354NSPBF pvd13n.pdf?fileId=5546d462533600a401535683b097292f
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.25VDC; Icntrl max: 25mA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.25V DC
Control current max.: 25mA
Max. operating current: 550mA
Mounting: SMT
Case: SMD8
Body dimensions: 9.4x6.5x3.9mm
Leads: Gull Wing
Insulation voltage: 4kV
Operating temperature: -40...85°C
auf Bestellung 3500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+6.76 EUR
Mindestbestellmenge: 50
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DD435N34K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9FAE37B07C469&compId=DD435N40K.pdf?ci_sign=d36d02997142022fb2a1ac16c54d582b94394f46
DD435N34K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 3.4kV; If: 435A; BG-PB60-1; screw
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 0.84V
Load current: 435A
Max. off-state voltage: 3.4kV
Max. forward impulse current: 14.5kA
Case: BG-PB60-1
Type of semiconductor module: diode
Semiconductor structure: double series
Produkt ist nicht verfügbar
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DD435N36K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9FAE37B07C469&compId=DD435N40K.pdf?ci_sign=d36d02997142022fb2a1ac16c54d582b94394f46
DD435N36K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 3.6kV; If: 435A; BG-PB60-1; screw
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 0.84V
Load current: 435A
Max. off-state voltage: 3.6kV
Max. forward impulse current: 14.5kA
Case: BG-PB60-1
Type of semiconductor module: diode
Semiconductor structure: double series
Produkt ist nicht verfügbar
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DD435N40K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9FAE37B07C469&compId=DD435N40K.pdf?ci_sign=d36d02997142022fb2a1ac16c54d582b94394f46
DD435N40K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 4kV; If: 435A; BG-PB60-1; Ufmax: 0.84V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 0.84V
Load current: 435A
Max. off-state voltage: 4kV
Max. forward impulse current: 14.5kA
Case: BG-PB60-1
Type of semiconductor module: diode
Semiconductor structure: double series
Produkt ist nicht verfügbar
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IPB068N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF1EDDD4CED60DF&compId=IPB068N20NM6ATMA1.pdf?ci_sign=c5c2d43dc60740532496c8f4ae36adfa957dce47
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 134A; Idm: 536A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 134A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 73nC
Pulsed drain current: 536A
Produkt ist nicht verfügbar
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IPP069N20NM6AKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF221A1DC0D00DF&compId=IPP069N20NM6AKSA1.pdf?ci_sign=abb4d34089809af3b541f2eb29ed863271c9f84e
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 136A; Idm: 544A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 136A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 73nC
Pulsed drain current: 544A
Produkt ist nicht verfügbar
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BCR320UE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD8B58201AA259&compId=BCR320UE6327.pdf?ci_sign=9fa97ba168550006b9826d564fdfacf076618fb1
BCR320UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Topology: single transistor
Operating voltage: 0...25V DC
Output current: 0.25A
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
auf Bestellung 758 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
149+0.48 EUR
Mindestbestellmenge: 148
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BCR402U pVersion=0046&contRep=ZT&docId=E1C047218843F6F1A6F5005056AB5A8F&compId=bcr402u.pdf?ci_sign=e2aa470de93b164ecb20b5ac1c82fa9ec02cf215
BCR402U
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Topology: single transistor
Operating voltage: 1.4...40V DC
Output current: 20...65mA
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.76 EUR
Mindestbestellmenge: 15
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IKW30N65EL5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5FF825DFA73D7&compId=IKW30N65EL5.pdf?ci_sign=3e84e8081f403beff14a277f197238a0c9aed21a
IKW30N65EL5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 62A
Power dissipation: 114W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 44ns
Turn-off time: 359ns
Technology: TRENCHSTOP™ 5
auf Bestellung 229 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.43 EUR
18+4.15 EUR
22+3.27 EUR
25+2.9 EUR
30+2.7 EUR
120+2.62 EUR
Mindestbestellmenge: 17
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BTS5030-1EJA pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE4EECEAA10C259&compId=BTS5030-1EJA.pdf?ci_sign=25f2afe1cf2c7472cefa85b9ca4559e7261c2c31
BTS5030-1EJA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8
Supply voltage: 5...28V DC
Case: PG-DSO-8
Mounting: SMD
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Technology: PROFET™+ 12V
On-state resistance: 60mΩ
Power dissipation: 1.9W
Number of channels: 1
Output current: 4A
auf Bestellung 626 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.29 EUR
34+2.14 EUR
37+1.94 EUR
100+1.66 EUR
250+1.63 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9120NTRLPBF pVersion=0046&contRep=ZT&docId=E221C58A9DBDE8F1A303005056AB0C4F&compId=irfr9120npbf.pdf?ci_sign=97754911db563eff748ba770e7a42e35041cc7f2
IRFR9120NTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD5N25S3430ATMA1 Infineon-IPD5N25S3_430-DS-v01_00-en.pdf?fileId=db3a30433b92f0e8013b9379d03b0148
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 4A; Idm: 20A; 41W
Case: PG-TO252-3-313
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
On-state resistance: 0.43Ω
Power dissipation: 41W
Drain current: 4A
Pulsed drain current: 20A
Gate-source voltage: ±20V
Drain-source voltage: 250V
Produkt ist nicht verfügbar
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BAS5202VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFB4FA9C27A469&compId=BAS5202VH6327XTSA1.pdf?ci_sign=f101896bc62890626f8fe38ee88267a1715a2131
BAS5202VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 45V; 0.75A; 500mW
Type of diode: Schottky rectifying
Case: SC79
Mounting: SMD
Max. off-state voltage: 45V
Load current: 0.75A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Power dissipation: 0.5W
auf Bestellung 4234 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
234+0.31 EUR
264+0.27 EUR
348+0.21 EUR
391+0.18 EUR
538+0.13 EUR
1000+0.11 EUR
3000+0.1 EUR
Mindestbestellmenge: 179
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BAS5202VH6433XTMA1 Infineon-BAS52SERIES-DS-v01_01-en.pdf?fileId=db3a30432d9b3066012dbc006764413f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 45V; 750mA; 500mW
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 45V
Load current: 0.75A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.6V
Max. load current: 0.75A
Leakage current: 10µA
Max. forward impulse current: 2A
Power dissipation: 0.5W
Application: automotive industry
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.094 EUR
Mindestbestellmenge: 10000
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ISP742RI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD66FD3A01975EA&compId=ISP742RI.pdf?ci_sign=ba68272d53a12c7b7132945ea35aa7c760bc9660
ISP742RI
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Mounting: SMD
Case: SO8
Technology: Industrial PROFET
Supply voltage: 5...34V DC
Kind of output: N-Channel
auf Bestellung 1394 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.46 EUR
46+1.57 EUR
52+1.39 EUR
100+1.32 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
TLE49643KXTSA1 Infineon-TLE4964_3K-DS-v01_00-en.pdf?fileId=db3a3043397219b60139779f2b9f5404
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.42 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPB017N10N5ATMA1 IPB017N10N5-DTE.pdf
IPB017N10N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB017N06N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5D047724C211C&compId=IPB017N06N3G-DTE.pdf?ci_sign=208230effbcefd907be045691ad144c03c166baf
IPB017N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB017N10N5LFATMA1 Infineon-IPB017N10N5LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b379cf73c7f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 313W; D2PAK-7; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 313W
Case: D2PAK-7
Gate-source voltage: 20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+5.05 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R120C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD80FB45DB9AA0C7&compId=IPA60R120C7.pdf?ci_sign=3083aa4cc297038ef65fd768dad53daafdfb3e1f
IPA60R120C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 66A; 32W; TO220FP
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 0.12Ω
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 32W
Pulsed drain current: 66A
Technology: CoolMOS™ C7
Drain-source voltage: 650V
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISP452 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586989BFA79C82469&compId=ISP452.pdf?ci_sign=2061c4713e40e04fd5df07147ea159759c248e13
ISP452
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 5...34V DC
On-state resistance: 0.16Ω
Technology: Industrial PROFET
Kind of output: N-Channel
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.14 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
BCX5216H6327XTSA1 infineon-bcx51-bcx52-bcx53-ds-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.2 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
BCX5216H6433XTMA1 infineon-bcx51-bcx52-bcx53-ds-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.17 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
IRF9389TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC9C6E07FC35EA&compId=IRF9389TRPBF.pdf?ci_sign=ea3b1216efc13bc500124d935d1fdf6b8d441c11
IRF9389TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
BSP752T pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697A892C9B98469&compId=BSP752T.pdf?ci_sign=b5ced3c5ed460144b067c1a56ab54b4b2531568d
BSP752T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP752TXUMA1 Infineon-BSP752T-DS-v01_01-EN.pdf?fileId=5546d46259d9a4bf015a8533f0fa778a
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS118D pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF4787C35DE4745&compId=BTS118D.pdf?ci_sign=9b9db2d4e2b7ee7d791f6da8d36a09917897c1ff
BTS118D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.4A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 0.1Ω
Technology: HITFET®
Output voltage: 42V
Power dissipation: 21W
Produkt ist nicht verfügbar
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BSZ520N15NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC3ECE7EAA411C&compId=BSZ520N15NS3G-DTE.pdf?ci_sign=4334bb1e8d31b9ce8d1cb4da0d0f9340350c816c
BSZ520N15NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC520N15NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6561A525011C&compId=BSC520N15NS3G-DTE.pdf?ci_sign=fb4d680c37f940e2565f9ae51fea56efe2625137
BSC520N15NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB060N15N5ATMA1 Infineon-IPB060N15N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b5ca333d3364d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 150V; 136A; 250W; TO263-7; SMT
Case: TO263-7
Mounting: SMD
Type of transistor: N-MOSFET
Electrical mounting: SMT
Kind of channel: enhancement
Gate-source voltage: 20V
Gate charge: 68nC
On-state resistance: 4.8mΩ
Drain current: 136A
Power dissipation: 250W
Drain-source voltage: 150V
Technology: MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.7 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
XC8868FFI5VACFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6C16D8DC79E28&compId=XC88X-DTE.pdf?ci_sign=d050d2878a88789e7d06e3553657479f565ee731
XC8868FFI5VACFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Mounting: SMD
Type of integrated circuit: microcontroller 8051
Case: PG-TQFP-48
Interface: SPI; UART x2
Integrated circuit features: watchdog
Operating temperature: -40...85°C
Number of output compare channels: 1
Number of input capture channels: 1
Supply voltage: 3...5V DC
Number of 16bit timers: 4
Number of PWM channels: 4
Number of 10bit A/D converters: 8
Memory: 1.75kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9335TRPBF pVersion=0046&contRep=ZT&docId=E221AFCB3374F8F1A303005056AB0C4F&compId=irf9335pbf.pdf?ci_sign=75a5ae7da5bf91ec152bd1ed019fa68e31a48696
IRF9335TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.4A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9358TRPBF pVersion=0046&contRep=ZT&docId=E221AFE6B19E50F1A303005056AB0C4F&compId=irf9358pbf.pdf?ci_sign=2603984b04ac0777b4f4d8423a7f0c4913626159
IRF9358TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.2A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.2A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9362TRPBF pVersion=0046&contRep=ZT&docId=E221B00322F7EAF1A303005056AB0C4F&compId=irf9362pbf.pdf?ci_sign=daec17103d69b620a36fa31b8c45e333a8f32cd4
IRF9362TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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CY7C1480BV33-200AXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD160N22K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C86AA869E30469&compId=DD160N22K.pdf?ci_sign=89bba5a5b6017d61df8b68446cd34101842b194f
DD160N22K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 160A; BG-PB34-1; screw
Case: BG-PB34-1
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 160A
Max. forward impulse current: 4.6kA
Max. off-state voltage: 2.2kV
Semiconductor structure: double series
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+269.3 EUR
3+225.25 EUR
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BSP772T pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697ACDC9066A469&compId=BSP772T.pdf?ci_sign=30fabbcc8cb7dfd515be88603b5898f2678b306f
BSP772T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Technology: Classic PROFET
Supply voltage: 5...34V DC
auf Bestellung 1287 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.2 EUR
25+2.87 EUR
100+2.27 EUR
250+2.04 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
BGSA14GN10E6327XTSA1 Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Application: telecommunication
Case: TSNP10
Type of integrated circuit: RF switch
Mounting: SMD
Output configuration: SP4T
Number of channels: 4
Supply voltage: 1.8...3.6V DC
Bandwidth: 0.1...5GHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISO1H811GAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE79487AD8711E72747&compId=ISO1H811G.pdf?ci_sign=6af05765db5015ce017c9f66200429b3118e9db0
ISO1H811GAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: driver; high-side; ISOFACE™; PG-DSO-36; 625mA; Ch: 8; 11÷35VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Technology: ISOFACE™
Case: PG-DSO-36
Output current: 0.625A
Number of channels: 8
Supply voltage: 11...35V DC
Integrated circuit features: 8bit interface; galvanically isolated
Mounting: SMD
On-state resistance: 0.15Ω
Operating temperature: -25...125°C
Kind of package: reel; tape
Kind of output: N-Channel
Turn-on time: 64µs
Turn-off time: 89µs
Power dissipation: 3.3W
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CY7C2245KV18-450BZXI Infineon-CY7C2245KV18-450BZXI-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2b7a837b0
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 450MHz
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IPD80R2K0P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA500A0526CE143&compId=IPD80R2K0P7.pdf?ci_sign=c53a33955b5e634b291666a18a0dfbe567e6a0d1
IPD80R2K0P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 9nC
Technology: CoolMOS™ P7
Version: ESD
auf Bestellung 1462 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
83+0.87 EUR
95+0.75 EUR
107+0.67 EUR
114+0.63 EUR
Mindestbestellmenge: 66
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DD260N16K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586CA08F9313D8469&compId=DD260N18K.pdf?ci_sign=1a3eeda9b19c3aa4315259af2d268dad7a8056c1
DD260N16K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 260A
Case: BG-PB50-1
Max. forward voltage: 1.32V
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
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