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IRFU9024NPBF IRFU9024NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E7D50559BF1A6F5005056AB5A8F&compId=irfr9024n.pdf?ci_sign=e676952b8a6a14a6d0b9ff8eafc4cbd4f96826fd description Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; IPAK
Case: IPAK
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Gate charge: 12.7nC
On-state resistance: 0.175Ω
Gate-source voltage: ±20V
Power dissipation: 38W
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.21 EUR
Mindestbestellmenge: 7
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BAS28E6327HTSA1 BAS28E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7FEB1F0F20469&compId=BAS28E6327HTSA1.pdf?ci_sign=61309fd24f01b821dccb60622dc4e896ab05d501 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT143; 330mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT143
Power dissipation: 0.33W
Kind of package: reel; tape
auf Bestellung 1907 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
321+0.22 EUR
353+0.2 EUR
477+0.15 EUR
658+0.11 EUR
705+0.1 EUR
Mindestbestellmenge: 264
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BAV199E6327HTSA1 BAV199E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA2C3DBB9E0C469&compId=BAV199E6327.pdf?ci_sign=a1da7bd8c1599beff66feab99d3a7e5a0640bba5 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; SOT23; 330mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Semiconductor structure: double series
Case: SOT23
Power dissipation: 0.33W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 3289 Stücke:
Lieferzeit 14-21 Tag (e)
325+0.22 EUR
498+0.14 EUR
556+0.13 EUR
655+0.11 EUR
1450+0.049 EUR
1534+0.047 EUR
Mindestbestellmenge: 325
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BSS126H6327XTSA2 BSS126H6327XTSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B77048F4AD011C&compId=BSS126H6327XTSA2.pdf?ci_sign=a8118681e49b825d7c988d404c2198fcba1dd1cf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain current: 21mA
Power dissipation: 0.5W
On-state resistance: 700Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: depletion
auf Bestellung 2461 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
136+0.53 EUR
154+0.47 EUR
275+0.26 EUR
291+0.25 EUR
295+0.24 EUR
Mindestbestellmenge: 107
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ICE3BR4765JGXUMA1 ICE3BR4765JGXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE30FC061DBA259&compId=ICE3BR4765JG.pdf?ci_sign=95a7f62974d2cfe45acb074f63d500b1e43f11f2 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.32A
Frequency: 65kHz
Number of channels: 1
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Power: 24/16.5W
Application: SMPS
Operating voltage: 10.5...25V DC
auf Bestellung 1485 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
43+1.7 EUR
48+1.52 EUR
50+1.43 EUR
500+1.37 EUR
Mindestbestellmenge: 40
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ICE3PCS01G ICE3PCS01G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE3A1FC0F2E8259&compId=ICE3PCS01G.pdf?ci_sign=c391d469f96c741ae49b2f5803c8ebf735bcd417 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-14; boost; 90÷270V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-14
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 1519 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.2 EUR
40+1.8 EUR
43+1.7 EUR
1000+1.64 EUR
Mindestbestellmenge: 18
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ICE3PCS02GXUMA1 ICE3PCS02GXUMA1 INFINEON TECHNOLOGIES Infineon-ICE3PCS02-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129a67fab472b4b Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
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ICE3PCS03GXUMA1 ICE3PCS03GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE3A4F0D40C8259&compId=ICE3PCS03G.pdf?ci_sign=681fdf327e579491c7b3fdba419e20770ca4b24b Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
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IR2103STRPBF IR2103STRPBF INFINEON TECHNOLOGIES ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.56 EUR
55+1.32 EUR
57+1.27 EUR
Mindestbestellmenge: 46
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IRFS3607TRLPBF IRFS3607TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C788DD8CBFF1A303005056AB0C4F&compId=irfs3607pbf.pdf?ci_sign=bd195fc092e1dd6bd534dd7e189505e734d16645 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFU3607PBF IRFU3607PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E77534BB2F1A6F5005056AB5A8F&compId=irfr3607pbf.pdf?ci_sign=abd65b35981b36614dd577031107c0e246651bd3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; IPAK
Case: IPAK
Drain-source voltage: 75V
Drain current: 80A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Gate charge: 56nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
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IRF5801TRPBF IRF5801TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F65AA430653F1A303005056AB0C4F&compId=irf5801pbf.pdf?ci_sign=f7e5c67b927b2f01bfff7333591905e81fb2e857 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.6A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2854 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
143+0.5 EUR
160+0.45 EUR
232+0.31 EUR
315+0.23 EUR
332+0.22 EUR
500+0.21 EUR
Mindestbestellmenge: 125
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BFP420FH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA6802EB73DEAE0D3&compId=BFP420F.pdf?ci_sign=afe946604d1ec31861261cc2d930ed7d8b1c36f1 Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 60mA; 0.21W; TSFP-4
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 60mA
Power dissipation: 0.21W
Case: TSFP-4
Current gain: 60...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Produkt ist nicht verfügbar
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BFP420H6327XTSA1 BFP420H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDACD1BBF77AAA60D4&compId=BFP420.pdf?ci_sign=d4cbda62faac15f665da1a426c49eaee3d955f1b Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 60mA; 0.21W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 60mA
Power dissipation: 0.21W
Case: SOT343
Current gain: 60...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
auf Bestellung 5106 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
285+0.25 EUR
298+0.24 EUR
Mindestbestellmenge: 278
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IRLZ44NPBF IRLZ44NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E267CF1A6F5005056AB5A8F&compId=irlz44n.pdf?ci_sign=29c4c6da092dd5917ede6f2c8e0f88e0cbd6dda1 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: tube
Gate-source voltage: ±16V
Gate charge: 32nC
On-state resistance: 22mΩ
Produkt ist nicht verfügbar
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IRLZ44NSTRLPBF IRLZ44NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222829258BE4CF1A303005056AB0C4F&compId=irlz44nspbf.pdf?ci_sign=54f1cf0a982b6a0bce7784544748b957c0758101 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLZ44ZSTRLPBF IRLZ44ZSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22282B0EE823FF1A303005056AB0C4F&compId=irlz44zpbf.pdf?ci_sign=df99f847f67bd5c950d2033f908855d7b1e7f3f4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 51A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 51A
Power dissipation: 80W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IGB30N60H3ATMA1 IGB30N60H3ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B313D524DA4FA8&compId=IGB30N60H3-DTE.pdf?ci_sign=05eee272f2f32c94c4edda458aab4b05290465f5 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IGB30N60TATMA1 IGB30N60TATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB73666C9E5820&compId=IGB30N60T.pdf?ci_sign=a0ac3756ccabfc993586f145ae667cbc69bf930c Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 39A; 187W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 39A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Turn-on time: 44ns
Gate charge: 167nC
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
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IGW30N60H3FKSA1 IGW30N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B36955C3EDAFA8&compId=IGW30N60H3-DTE.pdf?ci_sign=67638d2c2709d4fbf274df53d140b550492f47b6 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Mounting: THT
Collector current: 30A
Kind of package: tube
Type of transistor: IGBT
Collector-emitter voltage: 600V
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
auf Bestellung 442 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.23 EUR
23+3.17 EUR
28+2.57 EUR
30+2.43 EUR
31+2.35 EUR
Mindestbestellmenge: 17
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IGW30N60TFKSA1 IGW30N60TFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B36BD911164FA8&compId=IGW30N60TFKSA1-DTE.pdf?ci_sign=b018b9d13f27961b38a7cb999c2ec06c3206561e Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.29 EUR
19+3.93 EUR
29+2.53 EUR
30+2.4 EUR
Mindestbestellmenge: 17
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IKW30N60H3FKSA1 IKW30N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EE0D0E718220745&compId=IKW30N60H3.pdf?ci_sign=a1c79d86c62d9b0a8b38302b25c49b78756d1a41 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 94W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.56 EUR
30+2.4 EUR
31+2.3 EUR
Mindestbestellmenge: 21
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IKW30N60TFKSA1 IKW30N60TFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE83D6F52D7820&compId=IKW30N60T.pdf?ci_sign=f9d49fbbf5bca8e2a26c4d0279100b423dab6e45 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 39A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 39A
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 44ns
Gate charge: 167nC
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
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AIKW30N60CTXKSA1 AIKW30N60CTXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA88A350E5F820&compId=AIKW30N60CT.pdf?ci_sign=6968bf3033f29af22d372328b518782c7464a095 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 44ns
Gate charge: 167nC
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
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IR2302SPBF IR2302SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC26C57EF875EA&compId=IR2302SPBF.pdf?ci_sign=54d75faffa7f118a9bddf8a8184ab731f8d9a7e1 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Voltage class: 600V
Topology: MOSFET half-bridge
Output current: -0.35...0.2A
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.95 EUR
Mindestbestellmenge: 9
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IR2302STRPBF IR2302STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC26C57EF875EA&compId=IR2302SPBF.pdf?ci_sign=54d75faffa7f118a9bddf8a8184ab731f8d9a7e1 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Voltage class: 600V
Topology: MOSFET half-bridge
Output current: -0.35...0.2A
Produkt ist nicht verfügbar
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IR21064PBF IR21064PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F55BB632FD7F1A303005056AB0C4F&compId=ir2106.pdf?ci_sign=60c198277c5b13b4cf45f2a24e9c68803eb545df Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
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IR2106SPBF IR2106SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F55BB632FD7F1A303005056AB0C4F&compId=ir2106.pdf?ci_sign=60c198277c5b13b4cf45f2a24e9c68803eb545df Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
auf Bestellung 85 Stücke:
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24+3.09 EUR
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33+2.23 EUR
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IR2106STRPBF IR2106STRPBF INFINEON TECHNOLOGIES ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
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54+1.33 EUR
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IR2102SPBF IR2102SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD33DAF1A6F5005056AB5A8F&compId=ir2101_2102.pdf?ci_sign=177f6e77fff8b7d19eecd1ca54cf7c1ecd5b16eb description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
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IR2102STRPBF IR2102STRPBF INFINEON TECHNOLOGIES IRSDS17613-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
auf Bestellung 1506 Stücke:
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44+1.63 EUR
50+1.43 EUR
55+1.32 EUR
58+1.24 EUR
60+1.2 EUR
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IR21094SPBF IR21094SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD86EBAC15755EA&compId=IR21094SPBF.pdf?ci_sign=e52b4b1b7dbad02b8eb56f5ee02a6b8c88de787b Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
auf Bestellung 17 Stücke:
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17+4.2 EUR
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IR2109PBF IR2109PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD86EBAC15755EA&compId=IR21094SPBF.pdf?ci_sign=e52b4b1b7dbad02b8eb56f5ee02a6b8c88de787b Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
auf Bestellung 63 Stücke:
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50+2.23 EUR
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IR2109STRPBF IR2109STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD86EBAC15755EA&compId=IR21094SPBF.pdf?ci_sign=e52b4b1b7dbad02b8eb56f5ee02a6b8c88de787b Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -250...120mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
auf Bestellung 3764 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.47 EUR
57+1.26 EUR
63+1.14 EUR
65+1.12 EUR
71+1.02 EUR
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SPD08N50C3BTMA1 SPD08N50C3BTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC055B0CF746143&compId=SPD08N50C3.pdf?ci_sign=b862188d80ca98611ca5bbb3552eb42de1934d70 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR5305TRLPBF IRFR5305TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C4BBA30AFBF1A303005056AB0C4F&compId=irfr5305pbf.pdf?ci_sign=7de46f4b9e6f21d503ab5b0e162e5f7e5c9fdf70 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3747 Stücke:
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45+1.62 EUR
63+1.14 EUR
80+0.9 EUR
146+0.49 EUR
154+0.46 EUR
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IRFR5305TRPBF IRFR5305TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C4BBA30AFBF1A303005056AB0C4F&compId=irfr5305pbf.pdf?ci_sign=7de46f4b9e6f21d503ab5b0e162e5f7e5c9fdf70 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 9055 Stücke:
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43+1.7 EUR
67+1.07 EUR
79+0.91 EUR
174+0.41 EUR
184+0.39 EUR
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AUIRFR5305TR AUIRFR5305TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0459A727E00F1A6F5005056AB5A8F&compId=auirfr5305.pdf?ci_sign=8ba5a50746c52b1d874a77eb183958227fbf42c2 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AUIRFR5305TRL INFINEON TECHNOLOGIES auirfr5305.pdf?fileId=5546d462533600a4015355b5cb911494 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -22A
Power dissipation: 110W
Case: TO252AA
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 65mΩ
Gate-source voltage: ±20V
Pulsed drain current: -110A
Produkt ist nicht verfügbar
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IPI040N06N3GXKSA1 IPI040N06N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A6995DAD3FBCA11C&compId=IPI040N06N3G-DTE.pdf?ci_sign=5d0fdb2ae18e41775c6c36dcfad7d25cc4ee6d30 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 413 Stücke:
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49+1.47 EUR
55+1.3 EUR
62+1.16 EUR
72+1 EUR
76+0.94 EUR
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IPP040N06N3GXKSA1 IPP040N06N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E98C3F13C0811C&compId=IPP040N06N3G-DTE.pdf?ci_sign=dc43bbb37c068b8d637e5688c12841b44cf9c94a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 362 Stücke:
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30+2.43 EUR
45+1.6 EUR
53+1.36 EUR
56+1.29 EUR
100+1.23 EUR
Mindestbestellmenge: 30
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BFR193WH6327XTSA1 BFR193WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191D2E2BDFF411C&compId=BFR193WH6327-dte.pdf?ci_sign=d5d4bdb519ab3c0349eced101a0ebc15d034d71a Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.58W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 20V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Collector current: 80mA
auf Bestellung 1926 Stücke:
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143+0.5 EUR
175+0.41 EUR
302+0.24 EUR
358+0.2 EUR
511+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 143
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IPD040N03LGATMA1 IPD040N03LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F31B6D92D6611C&compId=IPD040N03LG-DTE.pdf?ci_sign=c43f580ccbbda67e3eef56e4bc1c1ff14680a8f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2688 Stücke:
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49+1.49 EUR
76+0.94 EUR
152+0.47 EUR
161+0.45 EUR
2500+0.44 EUR
Mindestbestellmenge: 49
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IGP06N60TXKSA1 IGP06N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B3171D35FF4FA8&compId=IGP06N60T-DTE.pdf?ci_sign=9ac35b215c56b00cc17deb3e21b51f59f54290eb Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Collector current: 6A
Gate-emitter voltage: ±20V
auf Bestellung 150 Stücke:
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37+1.97 EUR
40+1.83 EUR
53+1.36 EUR
71+1.02 EUR
74+0.97 EUR
75+0.96 EUR
100+0.93 EUR
Mindestbestellmenge: 37
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IKD06N60RATMA1 IKD06N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDD3F1CDA1D820&compId=IKD06N60R.pdf?ci_sign=c4b8048f27233912a33abdef90e7ecad642b9369 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: SMD
Technology: TRENCHSTOP™ RC
Turn-on time: 19ns
Gate charge: 48nC
Turn-off time: 279ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
Power dissipation: 100W
Collector-emitter voltage: 600V
Kind of package: reel; tape
Case: DPAK
auf Bestellung 814 Stücke:
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42+1.72 EUR
67+1.08 EUR
93+0.77 EUR
99+0.73 EUR
100+0.72 EUR
500+0.7 EUR
Mindestbestellmenge: 42
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IKP06N60TXKSA1 IKP06N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE2747C5EC7820&compId=IKP06N60T.pdf?ci_sign=fe7eb39bc96303d3dfea9fcce07ee1c6ee3290c4 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 15ns
Turn-off time: 188ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
auf Bestellung 26 Stücke:
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26+2.75 EUR
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BSZ100N03LSGATMA1 BSZ100N03LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E361D77DC011C&compId=BSZ100N03LSG-DTE.pdf?ci_sign=0aeb2ea04dbf0d85a37550526f88d1a53c2c8176 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ100N03MSGATMA1 BSZ100N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E3910A65E211C&compId=BSZ100N03MSG-DTE.pdf?ci_sign=3167bf6ff8d6294dd6408c2209455b666caa1dc8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRF2804PBF IRF2804PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB93F1A6F5005056AB5A8F&compId=irf2804pbf.pdf?ci_sign=9f2cd0b5281445cfe2b663272a91b969b93b978a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 96 Stücke:
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35+2.04 EUR
42+1.72 EUR
51+1.42 EUR
54+1.34 EUR
Mindestbestellmenge: 35
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IRF2804STRLPBF IRF2804STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD9C7052ECFB5EA&compId=IRF2804STRLPBF.pdf?ci_sign=ceb1c25cab55bb73207a20aedeee782175571ebd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF2804STRRPBF IRF2804STRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC55F4DADF75EA&compId=IRF2804STRRPBF.pdf?ci_sign=9690775b0b0968417ea458182b3ffc7d6f880934 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF2804L AUIRF2804L INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04DFEC1617BF1A6F5005056AB5A8F&compId=irf2804.pdf?ci_sign=1a9d3c5de401577578ccc09d152c5c33c6d2dbde Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Gate charge: 160nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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AUIRF2804STRL AUIRF2804STRL INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C045883D51A6F1A6F5005056AB5A8F&compId=auirf2804.pdf?ci_sign=48273ccb52c8944e4920d69227ea85c7a621f551 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRGP4062D AUIRGP4062D INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC726401B1413D7&compId=AUIRGP4062D.pdf?ci_sign=abe2566713006bbfdcfca57c4d542d338b09fdab Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 125W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 164ns
Produkt ist nicht verfügbar
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IRFS23N20DTRLP IRFS23N20DTRLP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBEF4AA2A1A2143&compId=IRFS23N20DTRLP.pdf?ci_sign=9f6ed2347050e53086604115e4da51f6ccbf05a5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 57nC
Produkt ist nicht verfügbar
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IRFS3004TRLPBF INFINEON TECHNOLOGIES irfs3004pbf.pdf?fileId=5546d462533600a4015356363a642149 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; Idm: 1.31kA; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Pulsed drain current: 1.31kA
Power dissipation: 380W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3006TRL7PP IRFS3006TRL7PP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C606F53EBAF1A303005056AB0C4F&compId=irfs3006-7ppbf.pdf?ci_sign=d684293d8cda10b025102521ccf3680057339b6f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 293A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 293A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3006TRLPBF INFINEON TECHNOLOGIES irfs3006pbf.pdf?fileId=5546d462533600a4015356364a7a214f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 191A; Idm: 1.08kA; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 191A
Pulsed drain current: 1.08kA
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3107TRL7PP IRFS3107TRL7PP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C6598EDC0AF1A303005056AB0C4F&compId=irfs3107-7ppbf.pdf?ci_sign=dd1aaaf504943348c941b72ad1047f40431fe658 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 260A; 370W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 260A
Power dissipation: 370W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3107TRLPBF IRFS3107TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C6598EDC0AF1A303005056AB0C4F&compId=irfs3107-7ppbf.pdf?ci_sign=dd1aaaf504943348c941b72ad1047f40431fe658 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFU9024NPBF description pVersion=0046&contRep=ZT&docId=E1C04E7D50559BF1A6F5005056AB5A8F&compId=irfr9024n.pdf?ci_sign=e676952b8a6a14a6d0b9ff8eafc4cbd4f96826fd
IRFU9024NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; IPAK
Case: IPAK
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Gate charge: 12.7nC
On-state resistance: 0.175Ω
Gate-source voltage: ±20V
Power dissipation: 38W
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
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BAS28E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7FEB1F0F20469&compId=BAS28E6327HTSA1.pdf?ci_sign=61309fd24f01b821dccb60622dc4e896ab05d501
BAS28E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT143; 330mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT143
Power dissipation: 0.33W
Kind of package: reel; tape
auf Bestellung 1907 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
321+0.22 EUR
353+0.2 EUR
477+0.15 EUR
658+0.11 EUR
705+0.1 EUR
Mindestbestellmenge: 264
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BAV199E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA2C3DBB9E0C469&compId=BAV199E6327.pdf?ci_sign=a1da7bd8c1599beff66feab99d3a7e5a0640bba5
BAV199E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; SOT23; 330mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Semiconductor structure: double series
Case: SOT23
Power dissipation: 0.33W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 3289 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
325+0.22 EUR
498+0.14 EUR
556+0.13 EUR
655+0.11 EUR
1450+0.049 EUR
1534+0.047 EUR
Mindestbestellmenge: 325
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BSS126H6327XTSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B77048F4AD011C&compId=BSS126H6327XTSA2.pdf?ci_sign=a8118681e49b825d7c988d404c2198fcba1dd1cf
BSS126H6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain current: 21mA
Power dissipation: 0.5W
On-state resistance: 700Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: depletion
auf Bestellung 2461 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
136+0.53 EUR
154+0.47 EUR
275+0.26 EUR
291+0.25 EUR
295+0.24 EUR
Mindestbestellmenge: 107
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ICE3BR4765JGXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE30FC061DBA259&compId=ICE3BR4765JG.pdf?ci_sign=95a7f62974d2cfe45acb074f63d500b1e43f11f2
ICE3BR4765JGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.32A
Frequency: 65kHz
Number of channels: 1
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Power: 24/16.5W
Application: SMPS
Operating voltage: 10.5...25V DC
auf Bestellung 1485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
43+1.7 EUR
48+1.52 EUR
50+1.43 EUR
500+1.37 EUR
Mindestbestellmenge: 40
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ICE3PCS01G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE3A1FC0F2E8259&compId=ICE3PCS01G.pdf?ci_sign=c391d469f96c741ae49b2f5803c8ebf735bcd417
ICE3PCS01G
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-14; boost; 90÷270V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-14
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 1519 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.2 EUR
40+1.8 EUR
43+1.7 EUR
1000+1.64 EUR
Mindestbestellmenge: 18
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ICE3PCS02GXUMA1 Infineon-ICE3PCS02-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129a67fab472b4b
ICE3PCS02GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
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ICE3PCS03GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE3A4F0D40C8259&compId=ICE3PCS03G.pdf?ci_sign=681fdf327e579491c7b3fdba419e20770ca4b24b
ICE3PCS03GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
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IR2103STRPBF description ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f
IR2103STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.56 EUR
55+1.32 EUR
57+1.27 EUR
Mindestbestellmenge: 46
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IRFS3607TRLPBF pVersion=0046&contRep=ZT&docId=E221C788DD8CBFF1A303005056AB0C4F&compId=irfs3607pbf.pdf?ci_sign=bd195fc092e1dd6bd534dd7e189505e734d16645
IRFS3607TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFU3607PBF pVersion=0046&contRep=ZT&docId=E1C04E77534BB2F1A6F5005056AB5A8F&compId=irfr3607pbf.pdf?ci_sign=abd65b35981b36614dd577031107c0e246651bd3
IRFU3607PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; IPAK
Case: IPAK
Drain-source voltage: 75V
Drain current: 80A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Gate charge: 56nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
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IRF5801TRPBF pVersion=0046&contRep=ZT&docId=E21F65AA430653F1A303005056AB0C4F&compId=irf5801pbf.pdf?ci_sign=f7e5c67b927b2f01bfff7333591905e81fb2e857
IRF5801TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.6A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2854 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
143+0.5 EUR
160+0.45 EUR
232+0.31 EUR
315+0.23 EUR
332+0.22 EUR
500+0.21 EUR
Mindestbestellmenge: 125
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BFP420FH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA6802EB73DEAE0D3&compId=BFP420F.pdf?ci_sign=afe946604d1ec31861261cc2d930ed7d8b1c36f1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 60mA; 0.21W; TSFP-4
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 60mA
Power dissipation: 0.21W
Case: TSFP-4
Current gain: 60...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Produkt ist nicht verfügbar
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BFP420H6327XTSA1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDACD1BBF77AAA60D4&compId=BFP420.pdf?ci_sign=d4cbda62faac15f665da1a426c49eaee3d955f1b
BFP420H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 60mA; 0.21W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 60mA
Power dissipation: 0.21W
Case: SOT343
Current gain: 60...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
auf Bestellung 5106 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
285+0.25 EUR
298+0.24 EUR
Mindestbestellmenge: 278
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IRLZ44NPBF description pVersion=0046&contRep=ZT&docId=E1C04E9B5E267CF1A6F5005056AB5A8F&compId=irlz44n.pdf?ci_sign=29c4c6da092dd5917ede6f2c8e0f88e0cbd6dda1
IRLZ44NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: tube
Gate-source voltage: ±16V
Gate charge: 32nC
On-state resistance: 22mΩ
Produkt ist nicht verfügbar
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IRLZ44NSTRLPBF pVersion=0046&contRep=ZT&docId=E222829258BE4CF1A303005056AB0C4F&compId=irlz44nspbf.pdf?ci_sign=54f1cf0a982b6a0bce7784544748b957c0758101
IRLZ44NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLZ44ZSTRLPBF pVersion=0046&contRep=ZT&docId=E22282B0EE823FF1A303005056AB0C4F&compId=irlz44zpbf.pdf?ci_sign=df99f847f67bd5c950d2033f908855d7b1e7f3f4
IRLZ44ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 51A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 51A
Power dissipation: 80W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IGB30N60H3ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B313D524DA4FA8&compId=IGB30N60H3-DTE.pdf?ci_sign=05eee272f2f32c94c4edda458aab4b05290465f5
IGB30N60H3ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IGB30N60TATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB73666C9E5820&compId=IGB30N60T.pdf?ci_sign=a0ac3756ccabfc993586f145ae667cbc69bf930c
IGB30N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 39A; 187W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 39A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Turn-on time: 44ns
Gate charge: 167nC
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
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IGW30N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B36955C3EDAFA8&compId=IGW30N60H3-DTE.pdf?ci_sign=67638d2c2709d4fbf274df53d140b550492f47b6
IGW30N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Mounting: THT
Collector current: 30A
Kind of package: tube
Type of transistor: IGBT
Collector-emitter voltage: 600V
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
auf Bestellung 442 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.23 EUR
23+3.17 EUR
28+2.57 EUR
30+2.43 EUR
31+2.35 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60TFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B36BD911164FA8&compId=IGW30N60TFKSA1-DTE.pdf?ci_sign=b018b9d13f27961b38a7cb999c2ec06c3206561e
IGW30N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.29 EUR
19+3.93 EUR
29+2.53 EUR
30+2.4 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EE0D0E718220745&compId=IKW30N60H3.pdf?ci_sign=a1c79d86c62d9b0a8b38302b25c49b78756d1a41
IKW30N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 94W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.56 EUR
30+2.4 EUR
31+2.3 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60TFKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE83D6F52D7820&compId=IKW30N60T.pdf?ci_sign=f9d49fbbf5bca8e2a26c4d0279100b423dab6e45
IKW30N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 39A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 39A
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 44ns
Gate charge: 167nC
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIKW30N60CTXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA88A350E5F820&compId=AIKW30N60CT.pdf?ci_sign=6968bf3033f29af22d372328b518782c7464a095
AIKW30N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 44ns
Gate charge: 167nC
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2302SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC26C57EF875EA&compId=IR2302SPBF.pdf?ci_sign=54d75faffa7f118a9bddf8a8184ab731f8d9a7e1
IR2302SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Voltage class: 600V
Topology: MOSFET half-bridge
Output current: -0.35...0.2A
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IR2302STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC26C57EF875EA&compId=IR2302SPBF.pdf?ci_sign=54d75faffa7f118a9bddf8a8184ab731f8d9a7e1
IR2302STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Voltage class: 600V
Topology: MOSFET half-bridge
Output current: -0.35...0.2A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR21064PBF pVersion=0046&contRep=ZT&docId=E21F55BB632FD7F1A303005056AB0C4F&compId=ir2106.pdf?ci_sign=60c198277c5b13b4cf45f2a24e9c68803eb545df
IR21064PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2106SPBF pVersion=0046&contRep=ZT&docId=E21F55BB632FD7F1A303005056AB0C4F&compId=ir2106.pdf?ci_sign=60c198277c5b13b4cf45f2a24e9c68803eb545df
IR2106SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.42 EUR
24+3.09 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IR2106STRPBF description ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673
IR2106STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
auf Bestellung 829 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
54+1.33 EUR
56+1.29 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
IR2102SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD33DAF1A6F5005056AB5A8F&compId=ir2101_2102.pdf?ci_sign=177f6e77fff8b7d19eecd1ca54cf7c1ecd5b16eb
IR2102SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2102STRPBF IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
auf Bestellung 1506 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
50+1.43 EUR
55+1.32 EUR
58+1.24 EUR
60+1.2 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IR21094SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD86EBAC15755EA&compId=IR21094SPBF.pdf?ci_sign=e52b4b1b7dbad02b8eb56f5ee02a6b8c88de787b
IR21094SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.2 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IR2109PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD86EBAC15755EA&compId=IR21094SPBF.pdf?ci_sign=e52b4b1b7dbad02b8eb56f5ee02a6b8c88de787b
IR2109PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.13 EUR
31+2.37 EUR
32+2.25 EUR
50+2.23 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IR2109STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD86EBAC15755EA&compId=IR21094SPBF.pdf?ci_sign=e52b4b1b7dbad02b8eb56f5ee02a6b8c88de787b
IR2109STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -250...120mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
auf Bestellung 3764 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
57+1.26 EUR
63+1.14 EUR
65+1.12 EUR
71+1.02 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
SPD08N50C3BTMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC055B0CF746143&compId=SPD08N50C3.pdf?ci_sign=b862188d80ca98611ca5bbb3552eb42de1934d70
SPD08N50C3BTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR5305TRLPBF pVersion=0046&contRep=ZT&docId=E221C4BBA30AFBF1A303005056AB0C4F&compId=irfr5305pbf.pdf?ci_sign=7de46f4b9e6f21d503ab5b0e162e5f7e5c9fdf70
IRFR5305TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3747 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
63+1.14 EUR
80+0.9 EUR
146+0.49 EUR
154+0.46 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
IRFR5305TRPBF description pVersion=0046&contRep=ZT&docId=E221C4BBA30AFBF1A303005056AB0C4F&compId=irfr5305pbf.pdf?ci_sign=7de46f4b9e6f21d503ab5b0e162e5f7e5c9fdf70
IRFR5305TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 9055 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.7 EUR
67+1.07 EUR
79+0.91 EUR
174+0.41 EUR
184+0.39 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFR5305TR pVersion=0046&contRep=ZT&docId=E1C0459A727E00F1A6F5005056AB5A8F&compId=auirfr5305.pdf?ci_sign=8ba5a50746c52b1d874a77eb183958227fbf42c2
AUIRFR5305TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFR5305TRL auirfr5305.pdf?fileId=5546d462533600a4015355b5cb911494
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -22A
Power dissipation: 110W
Case: TO252AA
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 65mΩ
Gate-source voltage: ±20V
Pulsed drain current: -110A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI040N06N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A6995DAD3FBCA11C&compId=IPI040N06N3G-DTE.pdf?ci_sign=5d0fdb2ae18e41775c6c36dcfad7d25cc4ee6d30
IPI040N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 413 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
55+1.3 EUR
62+1.16 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
IPP040N06N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E98C3F13C0811C&compId=IPP040N06N3G-DTE.pdf?ci_sign=dc43bbb37c068b8d637e5688c12841b44cf9c94a
IPP040N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 362 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.43 EUR
45+1.6 EUR
53+1.36 EUR
56+1.29 EUR
100+1.23 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
BFR193WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191D2E2BDFF411C&compId=BFR193WH6327-dte.pdf?ci_sign=d5d4bdb519ab3c0349eced101a0ebc15d034d71a
BFR193WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.58W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 20V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Collector current: 80mA
auf Bestellung 1926 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
175+0.41 EUR
302+0.24 EUR
358+0.2 EUR
511+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
IPD040N03LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F31B6D92D6611C&compId=IPD040N03LG-DTE.pdf?ci_sign=c43f580ccbbda67e3eef56e4bc1c1ff14680a8f1
IPD040N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2688 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
76+0.94 EUR
152+0.47 EUR
161+0.45 EUR
2500+0.44 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
IGP06N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B3171D35FF4FA8&compId=IGP06N60T-DTE.pdf?ci_sign=9ac35b215c56b00cc17deb3e21b51f59f54290eb
IGP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Collector current: 6A
Gate-emitter voltage: ±20V
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.97 EUR
40+1.83 EUR
53+1.36 EUR
71+1.02 EUR
74+0.97 EUR
75+0.96 EUR
100+0.93 EUR
Mindestbestellmenge: 37
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IKD06N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDD3F1CDA1D820&compId=IKD06N60R.pdf?ci_sign=c4b8048f27233912a33abdef90e7ecad642b9369
IKD06N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: SMD
Technology: TRENCHSTOP™ RC
Turn-on time: 19ns
Gate charge: 48nC
Turn-off time: 279ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
Power dissipation: 100W
Collector-emitter voltage: 600V
Kind of package: reel; tape
Case: DPAK
auf Bestellung 814 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
67+1.08 EUR
93+0.77 EUR
99+0.73 EUR
100+0.72 EUR
500+0.7 EUR
Mindestbestellmenge: 42
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IKP06N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE2747C5EC7820&compId=IKP06N60T.pdf?ci_sign=fe7eb39bc96303d3dfea9fcce07ee1c6ee3290c4
IKP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 15ns
Turn-off time: 188ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.75 EUR
Mindestbestellmenge: 26
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BSZ100N03LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E361D77DC011C&compId=BSZ100N03LSG-DTE.pdf?ci_sign=0aeb2ea04dbf0d85a37550526f88d1a53c2c8176
BSZ100N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ100N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E3910A65E211C&compId=BSZ100N03MSG-DTE.pdf?ci_sign=3167bf6ff8d6294dd6408c2209455b666caa1dc8
BSZ100N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRF2804PBF pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB93F1A6F5005056AB5A8F&compId=irf2804pbf.pdf?ci_sign=9f2cd0b5281445cfe2b663272a91b969b93b978a
IRF2804PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
42+1.72 EUR
51+1.42 EUR
54+1.34 EUR
Mindestbestellmenge: 35
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IRF2804STRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD9C7052ECFB5EA&compId=IRF2804STRLPBF.pdf?ci_sign=ceb1c25cab55bb73207a20aedeee782175571ebd
IRF2804STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF2804STRRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC55F4DADF75EA&compId=IRF2804STRRPBF.pdf?ci_sign=9690775b0b0968417ea458182b3ffc7d6f880934
IRF2804STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF2804L pVersion=0046&contRep=ZT&docId=E1C04DFEC1617BF1A6F5005056AB5A8F&compId=irf2804.pdf?ci_sign=1a9d3c5de401577578ccc09d152c5c33c6d2dbde
AUIRF2804L
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Gate charge: 160nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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AUIRF2804STRL pVersion=0046&contRep=ZT&docId=E1C045883D51A6F1A6F5005056AB5A8F&compId=auirf2804.pdf?ci_sign=48273ccb52c8944e4920d69227ea85c7a621f551
AUIRF2804STRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRGP4062D pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC726401B1413D7&compId=AUIRGP4062D.pdf?ci_sign=abe2566713006bbfdcfca57c4d542d338b09fdab
AUIRGP4062D
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 125W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 164ns
Produkt ist nicht verfügbar
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IRFS23N20DTRLP pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBEF4AA2A1A2143&compId=IRFS23N20DTRLP.pdf?ci_sign=9f6ed2347050e53086604115e4da51f6ccbf05a5
IRFS23N20DTRLP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 57nC
Produkt ist nicht verfügbar
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IRFS3004TRLPBF irfs3004pbf.pdf?fileId=5546d462533600a4015356363a642149
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; Idm: 1.31kA; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Pulsed drain current: 1.31kA
Power dissipation: 380W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3006TRL7PP pVersion=0046&contRep=ZT&docId=E221C606F53EBAF1A303005056AB0C4F&compId=irfs3006-7ppbf.pdf?ci_sign=d684293d8cda10b025102521ccf3680057339b6f
IRFS3006TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 293A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 293A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3006TRLPBF irfs3006pbf.pdf?fileId=5546d462533600a4015356364a7a214f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 191A; Idm: 1.08kA; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 191A
Pulsed drain current: 1.08kA
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3107TRL7PP pVersion=0046&contRep=ZT&docId=E221C6598EDC0AF1A303005056AB0C4F&compId=irfs3107-7ppbf.pdf?ci_sign=dd1aaaf504943348c941b72ad1047f40431fe658
IRFS3107TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 260A; 370W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 260A
Power dissipation: 370W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS3107TRLPBF pVersion=0046&contRep=ZT&docId=E221C6598EDC0AF1A303005056AB0C4F&compId=irfs3107-7ppbf.pdf?ci_sign=dd1aaaf504943348c941b72ad1047f40431fe658
IRFS3107TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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