Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149672) > Seite 2491 nach 2495
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S70GL02GT12FHIV13 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel Operating temperature: -40...85°C Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 120ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb FLASH Mounting: SMD Case: BGA64 Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
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S70GL02GT12FHIV23 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel Operating temperature: -40...85°C Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 120ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Gb FLASH Mounting: SMD Case: BGA64 Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
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BC817SUE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74 Case: SC74 Mounting: SMD Frequency: 170MHz Collector-emitter voltage: 45V Collector current: 0.5A Type of transistor: NPN Power dissipation: 1W Polarisation: bipolar |
auf Bestellung 146 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFH5300TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRFH5302DTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 29A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRFH5302TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRFH5304TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of channel: enhancement Kind of package: reel |
Produkt ist nicht verfügbar |
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XMC1403Q048X0200AAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH Operating temperature: -40...105°C Number of inputs/outputs: 42 Number of 16bit timers: 16 Integrated circuit features: EEPROM emulation; RTC; watchdog Interface: CAN x2; GPIO; USIC x4 Number of A/D channels: 12 Type of integrated circuit: ARM microcontroller Kind of architecture: Cortex M0 Family: XMC1400 Supply voltage: 1.8...5.5V DC Case: PG-VQFN-48 Memory: 16kB SRAM; 200kB FLASH |
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XMC1403Q048X0064AAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400 Operating temperature: -40...105°C Number of inputs/outputs: 42 Number of 16bit timers: 16 Integrated circuit features: EEPROM emulation; RTC; watchdog Interface: CAN x2; GPIO; USIC x4 Number of A/D channels: 12 Type of integrated circuit: ARM microcontroller Kind of architecture: Cortex M0 Family: XMC1400 Supply voltage: 1.8...5.5V DC Case: PG-VQFN-48 Memory: 16kB SRAM; 64kB FLASH |
Produkt ist nicht verfügbar |
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XMC1403Q048X0128AAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,128kBFLASH Operating temperature: -40...105°C Number of inputs/outputs: 42 Number of 16bit timers: 16 Integrated circuit features: EEPROM emulation; RTC; watchdog Interface: CAN x2; GPIO; USIC x4 Number of A/D channels: 12 Type of integrated circuit: ARM microcontroller Kind of architecture: Cortex M0 Family: XMC1400 Supply voltage: 1.8...5.5V DC Case: PG-VQFN-48 Memory: 16kB SRAM; 128kB FLASH |
Produkt ist nicht verfügbar |
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XMC1403Q064X0064AAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400 Operating temperature: -40...105°C Number of inputs/outputs: 55 Number of 16bit timers: 16 Integrated circuit features: EEPROM emulation; RTC; watchdog Interface: CAN x2; GPIO; USIC x4 Number of A/D channels: 12 Type of integrated circuit: ARM microcontroller Kind of architecture: Cortex M0 Family: XMC1400 Supply voltage: 1.8...5.5V DC Case: PG-VQFN-64 Memory: 16kB SRAM; 64kB FLASH |
Produkt ist nicht verfügbar |
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XMC1403Q064X0128AAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH Operating temperature: -40...105°C Number of inputs/outputs: 55 Number of 16bit timers: 16 Integrated circuit features: EEPROM emulation; RTC; watchdog Interface: CAN x2; GPIO; USIC x4 Number of A/D channels: 12 Type of integrated circuit: ARM microcontroller Kind of architecture: Cortex M0 Family: XMC1400 Supply voltage: 1.8...5.5V DC Case: PG-VQFN-64 Memory: 16kB SRAM; 128kB FLASH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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XMC1403Q064X0200AAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH Operating temperature: -40...105°C Number of inputs/outputs: 55 Number of 16bit timers: 16 Integrated circuit features: EEPROM emulation; RTC; watchdog Interface: CAN x2; GPIO; USIC x4 Number of A/D channels: 12 Type of integrated circuit: ARM microcontroller Kind of architecture: Cortex M0 Family: XMC1400 Supply voltage: 1.8...5.5V DC Case: PG-VQFN-64 Memory: 16kB SRAM; 200kB FLASH |
Produkt ist nicht verfügbar |
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ICE5AR4780BZSXKLA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; PWM controller; 2.6A; 100kHz; Ch: 1; DIP7; flyback; 0÷80% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 2.6A Frequency: 0.1MHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -40...140°C Topology: flyback Input voltage: 80...265V Breakdown voltage: 800V Duty cycle factor: 0...80% Power: 27.5/15/16W Application: SMPS Operating voltage: 10...25.5V DC |
Produkt ist nicht verfügbar |
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AUIPS71451GTR | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SO8; reel Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.1Ω Kind of package: reel Technology: Classic PROFET Operating temperature: -40...150°C Power dissipation: 1.25W Application: automotive industry |
Produkt ist nicht verfügbar |
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AUIRFN7107TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 300W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 53A Power dissipation: 300W Case: PQFN5X6 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AUIRFN8459TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 50W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 50W Case: PQFN5X6 Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
CY7C199D-10VXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 10ns; SOJ28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Access time: 10ns Case: SOJ28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S70KL1282GABHV020 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 128Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Supply voltage: 2.7...3.6V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S70KL1282GABHB020 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 128Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Supply voltage: 2.7...3.6V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S70KL1282GABHI020 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 128Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.7...3.6V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S70KL1282GABHI023 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 128Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.7...3.6V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S70KL1282GABHM023 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷125°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 128Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 2.7...3.6V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S70KL1282DPBHA020 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 128Mb DRAM Clock frequency: 166MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.7...3.6V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S70KL1282DPBHA023 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 128Mb DRAM Clock frequency: 166MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.7...3.6V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S70KL1282DPBHB020 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 128Mb DRAM Clock frequency: 166MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Supply voltage: 2.7...3.6V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S70KL1282DPBHI020 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 128Mb DRAM Clock frequency: 166MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.7...3.6V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S70KL1282DPBHI023 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 128Mb DRAM Clock frequency: 166MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.7...3.6V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S70KL1282DPBHV020 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 128Mb DRAM Clock frequency: 166MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Supply voltage: 2.7...3.6V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S70KL1282DPBHV023 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 128Mb DRAM Clock frequency: 166MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Supply voltage: 2.7...3.6V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S70KL1283GABHI023 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 128Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.7...3.6V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S70KL1283GABHV020 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 128Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Supply voltage: 2.7...3.6V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IDW15G120C5BFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 7.5Ax2; PG-TO247-3 Case: PG-TO247-3 Mounting: THT Kind of package: tube Max. off-state voltage: 1.2kV Max. forward voltage: 1.4V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 160A Leakage current: 8µA Power dissipation: 200W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC |
auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
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TLE6251DSXUMA2 | INFINEON TECHNOLOGIES |
![]() Description: IC: interface Type of integrated circuit: interface |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA105N15N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 37A; 40.5W; TO220FP Mounting: THT Case: TO220FP Power dissipation: 40.5W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 150V Drain current: 37A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET |
auf Bestellung 146 Stücke: Lieferzeit 14-21 Tag (e) |
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PVT312SPBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state Type of relay: solid state |
auf Bestellung 1296 Stücke: Lieferzeit 14-21 Tag (e) |
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SPD50P03LGBTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Power dissipation: 150W Case: PG-TO252-5 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 2485 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB4127PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 76A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB7537PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 173A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Gate charge: 142nC Kind of package: tube Kind of channel: enhancement Trade name: StrongIRFET |
auf Bestellung 170 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB7430PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB Drain-source voltage: 40V Drain current: 409A On-state resistance: 1.3mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Kind of package: tube Gate charge: 300nC Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±20V Trade name: StrongIRFET Mounting: THT Case: TO220AB |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB5620PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 25A Power dissipation: 144W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 72.5mΩ Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 97 Stücke: Lieferzeit 14-21 Tag (e) |
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CYUSB3326-88LTXI | INFINEON TECHNOLOGIES |
![]() Description: IC: interface Type of integrated circuit: interface |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
CY8C21334-24PVXI | INFINEON TECHNOLOGIES |
![]() ![]() Description: CY8C21334-24PVXI |
auf Bestellung 2598 Stücke: Lieferzeit 14-21 Tag (e) |
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DZ600N12K | INFINEON TECHNOLOGIES |
![]() Description: Module: diode; single diode; 1.2kV; If: 600A; BG-PB501-1; Ifsm: 22kA Case: BG-PB501-1 Max. off-state voltage: 1.2kV Max. forward voltage: 0.75V Load current: 600A Semiconductor structure: single diode Max. forward impulse current: 22kA Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP600N25N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3 Case: PG-TO220-3 Drain-source voltage: 250V Drain current: 25A On-state resistance: 60mΩ Type of transistor: N-MOSFET Power dissipation: 136W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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XMC4800E196K1536AAXQMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-LFBGA-196 Memory: 276kB SRAM; 1.5MB FLASH Number of inputs/outputs: 155 Supply voltage: 3.3V DC Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
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IGB01N120H2ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 1.3A; 28W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 1.3A Power dissipation: 28W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 3.5A Mounting: SMD Gate charge: 8.6nC Kind of package: reel; tape Turn-on time: 20.9ns Turn-off time: 493ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRFB3207PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 120A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRFB7534PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB Drain-source voltage: 60V Drain current: 195A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Power dissipation: 294W Polarisation: unipolar Kind of package: tube Gate charge: 186nC Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±20V Trade name: StrongIRFET Mounting: THT Case: TO220AB |
auf Bestellung 936 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA50R280CEXKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 30.4W; TO220FP Drain-source voltage: 500V Drain current: 7.5A On-state resistance: 0.28Ω Type of transistor: N-MOSFET Power dissipation: 30.4W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220FP |
auf Bestellung 468 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA50R950CEXKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; 25.7W; TO220FP Drain-source voltage: 500V Drain current: 2.4A On-state resistance: 0.95Ω Type of transistor: N-MOSFET Power dissipation: 25.7W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220FP |
auf Bestellung 113 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA50R250CPXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 33W; TO220FP Drain-source voltage: 500V Drain current: 13A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 33W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220FP |
auf Bestellung 194 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA50R190CEXKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP Drain-source voltage: 500V Drain current: 18.5A On-state resistance: 0.19Ω Type of transistor: N-MOSFET Power dissipation: 32W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220FP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPA50R199CPXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP Power dissipation: 139W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220FP Drain-source voltage: 500V Drain current: 17A On-state resistance: 0.199Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPA50R500CEXKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; 28W; TO220FP Drain-source voltage: 500V Drain current: 3.4A On-state resistance: 0.5Ω Type of transistor: N-MOSFET Power dissipation: 28W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220FP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPA50R399CPXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; 8.3W; TO220FP Power dissipation: 8.3W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220FP Drain-source voltage: 500V Drain current: 3.3A On-state resistance: 0.399Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPA50R520CPXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; TO220FP Drain-source voltage: 500V Drain current: 7.1A On-state resistance: 0.52Ω Type of transistor: N-MOSFET Power dissipation: 66W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220FP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPA50R800CEXKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 2.6A; 26.4W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.6A Power dissipation: 26.4W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPB110N20N3LF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 61A Power dissipation: 250W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPP110N20NAAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 88A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
S70GL02GT12FHIV13 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70GL02GT12FHIV23 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC817SUE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74
Case: SC74
Mounting: SMD
Frequency: 170MHz
Collector-emitter voltage: 45V
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74
Case: SC74
Mounting: SMD
Frequency: 170MHz
Collector-emitter voltage: 45V
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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146+ | 0.49 EUR |
IRFH5300TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFH5302DTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 29A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 29A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFH5302TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFH5304TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XMC1403Q048X0200AAXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-48
Memory: 16kB SRAM; 200kB FLASH
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-48
Memory: 16kB SRAM; 200kB FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XMC1403Q048X0064AAXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-48
Memory: 16kB SRAM; 64kB FLASH
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-48
Memory: 16kB SRAM; 64kB FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XMC1403Q048X0128AAXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-48
Memory: 16kB SRAM; 128kB FLASH
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-48
Memory: 16kB SRAM; 128kB FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XMC1403Q064X0064AAXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-64
Memory: 16kB SRAM; 64kB FLASH
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-64
Memory: 16kB SRAM; 64kB FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XMC1403Q064X0128AAXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-64
Memory: 16kB SRAM; 128kB FLASH
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-64
Memory: 16kB SRAM; 128kB FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XMC1403Q064X0200AAXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-64
Memory: 16kB SRAM; 200kB FLASH
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-64
Memory: 16kB SRAM; 200kB FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ICE5AR4780BZSXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.6A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.6A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...80%
Power: 27.5/15/16W
Application: SMPS
Operating voltage: 10...25.5V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.6A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.6A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...80%
Power: 27.5/15/16W
Application: SMPS
Operating voltage: 10...25.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIPS71451GTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.1Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.1Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRFN7107TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 300W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 53A
Power dissipation: 300W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 300W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 53A
Power dissipation: 300W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRFN8459TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 50W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 50W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C199D-10VXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70KL1282GABHV020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70KL1282GABHB020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70KL1282GABHI020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70KL1282GABHI023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70KL1282GABHM023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷125°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷125°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70KL1282DPBHA020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70KL1282DPBHA023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70KL1282DPBHB020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70KL1282DPBHI020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70KL1282DPBHI023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70KL1282DPBHV020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70KL1282DPBHV023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70KL1283GABHI023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70KL1283GABHV020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IDW15G120C5BFKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 7.5Ax2; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 160A
Leakage current: 8µA
Power dissipation: 200W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 7.5Ax2; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 160A
Leakage current: 8µA
Power dissipation: 200W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.46 EUR |
TLE6251DSXUMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.73 EUR |
IPA105N15N3GXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 37A; 40.5W; TO220FP
Mounting: THT
Case: TO220FP
Power dissipation: 40.5W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 37A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 37A; 40.5W; TO220FP
Mounting: THT
Case: TO220FP
Power dissipation: 40.5W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 37A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.26 EUR |
14+ | 5.41 EUR |
16+ | 4.56 EUR |
17+ | 4.29 EUR |
100+ | 4.13 EUR |
PVT312SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 1296 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 5.95 EUR |
100+ | 5.35 EUR |
SPD50P03LGBTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 150W
Case: PG-TO252-5
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 150W
Case: PG-TO252-5
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2485 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.82 EUR |
32+ | 2.25 EUR |
61+ | 1.17 EUR |
65+ | 1.10 EUR |
IRFB4127PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.17 EUR |
41+ | 1.77 EUR |
48+ | 1.50 EUR |
50+ | 1.44 EUR |
51+ | 1.42 EUR |
IRFB7537PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.35 EUR |
42+ | 1.73 EUR |
70+ | 1.03 EUR |
74+ | 0.97 EUR |
IRFB7430PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Drain-source voltage: 40V
Drain current: 409A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Gate charge: 300nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Trade name: StrongIRFET
Mounting: THT
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Drain-source voltage: 40V
Drain current: 409A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Gate charge: 300nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Trade name: StrongIRFET
Mounting: THT
Case: TO220AB
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.75 EUR |
17+ | 4.26 EUR |
22+ | 3.26 EUR |
24+ | 3.09 EUR |
IRFB5620PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
24+ | 3.00 EUR |
39+ | 1.87 EUR |
41+ | 1.77 EUR |
CYUSB3326-88LTXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
Produkt ist nicht verfügbar
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CY8C21334-24PVXI | ![]() |
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auf Bestellung 2598 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
66+ | 7.16 EUR |
DZ600N12K |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Case: BG-PB501-1
Max. off-state voltage: 1.2kV
Max. forward voltage: 0.75V
Load current: 600A
Semiconductor structure: single diode
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Case: BG-PB501-1
Max. off-state voltage: 1.2kV
Max. forward voltage: 0.75V
Load current: 600A
Semiconductor structure: single diode
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 317.82 EUR |
IPP600N25N3GXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Case: PG-TO220-3
Drain-source voltage: 250V
Drain current: 25A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Case: PG-TO220-3
Drain-source voltage: 250V
Drain current: 25A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.65 EUR |
24+ | 2.99 EUR |
26+ | 2.82 EUR |
50+ | 2.72 EUR |
XMC4800E196K1536AAXQMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...125°C
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
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IGB01N120H2ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 1.3A; 28W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 1.3A
Power dissipation: 28W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 3.5A
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Turn-on time: 20.9ns
Turn-off time: 493ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 1.3A; 28W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 1.3A
Power dissipation: 28W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 3.5A
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Turn-on time: 20.9ns
Turn-off time: 493ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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IRFB3207PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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IRFB7534PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Drain-source voltage: 60V
Drain current: 195A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 294W
Polarisation: unipolar
Kind of package: tube
Gate charge: 186nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Trade name: StrongIRFET
Mounting: THT
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Drain-source voltage: 60V
Drain current: 195A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 294W
Polarisation: unipolar
Kind of package: tube
Gate charge: 186nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Trade name: StrongIRFET
Mounting: THT
Case: TO220AB
auf Bestellung 936 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.04 EUR |
48+ | 1.50 EUR |
50+ | 1.43 EUR |
53+ | 1.36 EUR |
500+ | 1.30 EUR |
IPA50R280CEXKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 30.4W; TO220FP
Drain-source voltage: 500V
Drain current: 7.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 30.4W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 30.4W; TO220FP
Drain-source voltage: 500V
Drain current: 7.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 30.4W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
auf Bestellung 468 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.33 EUR |
81+ | 0.89 EUR |
86+ | 0.84 EUR |
IPA50R950CEXKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; 25.7W; TO220FP
Drain-source voltage: 500V
Drain current: 2.4A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 25.7W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; 25.7W; TO220FP
Drain-source voltage: 500V
Drain current: 2.4A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 25.7W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
54+ | 1.33 EUR |
113+ | 0.63 EUR |
IPA50R250CPXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 33W; TO220FP
Drain-source voltage: 500V
Drain current: 13A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 33W; TO220FP
Drain-source voltage: 500V
Drain current: 13A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.32 EUR |
32+ | 2.29 EUR |
34+ | 2.16 EUR |
IPA50R190CEXKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP
Drain-source voltage: 500V
Drain current: 18.5A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 32W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP
Drain-source voltage: 500V
Drain current: 18.5A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 32W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen
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IPA50R199CPXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP
Power dissipation: 139W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Drain-source voltage: 500V
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP
Power dissipation: 139W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Drain-source voltage: 500V
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPA50R500CEXKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; 28W; TO220FP
Drain-source voltage: 500V
Drain current: 3.4A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; 28W; TO220FP
Drain-source voltage: 500V
Drain current: 3.4A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen
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IPA50R399CPXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; 8.3W; TO220FP
Power dissipation: 8.3W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Drain-source voltage: 500V
Drain current: 3.3A
On-state resistance: 0.399Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; 8.3W; TO220FP
Power dissipation: 8.3W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Drain-source voltage: 500V
Drain current: 3.3A
On-state resistance: 0.399Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPA50R520CPXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; TO220FP
Drain-source voltage: 500V
Drain current: 7.1A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 66W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; TO220FP
Drain-source voltage: 500V
Drain current: 7.1A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 66W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen
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IPA50R800CEXKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.6A; 26.4W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.6A
Power dissipation: 26.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.6A; 26.4W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.6A
Power dissipation: 26.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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IPB110N20N3LF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 61A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 61A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP110N20NAAKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH