Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149582) > Seite 2491 nach 2494
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IRFB7537PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 173A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Gate charge: 142nC Kind of package: tube Kind of channel: enhancement Trade name: StrongIRFET |
auf Bestellung 170 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() |
IRFB7430PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB Drain-source voltage: 40V Drain current: 409A On-state resistance: 1.3mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Kind of package: tube Gate charge: 300nC Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±20V Trade name: StrongIRFET Mounting: THT Case: TO220AB |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() |
IRFB5620PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 25A Power dissipation: 144W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 72.5mΩ Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 97 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
CYUSB3326-88LTXI | INFINEON TECHNOLOGIES |
![]() Description: IC: interface Type of integrated circuit: interface |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
CY8C21334-24PVXI | INFINEON TECHNOLOGIES |
![]() ![]() Description: CY8C21334-24PVXI |
auf Bestellung 2598 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
![]() |
DZ600N12K | INFINEON TECHNOLOGIES |
![]() Description: Module: diode; single diode; 1.2kV; If: 600A; BG-PB501-1; Ifsm: 22kA Case: BG-PB501-1 Max. off-state voltage: 1.2kV Max. forward voltage: 0.75V Load current: 600A Semiconductor structure: single diode Max. forward impulse current: 22kA Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() |
IPP600N25N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3 Case: PG-TO220-3 Drain-source voltage: 250V Drain current: 25A On-state resistance: 60mΩ Type of transistor: N-MOSFET Power dissipation: 136W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() |
XMC4800E196K1536AAXQMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-LFBGA-196 Memory: 276kB SRAM; 1.5MB FLASH Number of inputs/outputs: 155 Supply voltage: 3.3V DC Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IGB01N120H2ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 1.3A; 28W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 1.3A Power dissipation: 28W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 3.5A Mounting: SMD Gate charge: 8.6nC Kind of package: reel; tape Turn-on time: 20.9ns Turn-off time: 493ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IRFB3207PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 120A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IRFB7534PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB Drain-source voltage: 60V Drain current: 195A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Power dissipation: 294W Polarisation: unipolar Kind of package: tube Gate charge: 186nC Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±20V Trade name: StrongIRFET Mounting: THT Case: TO220AB |
auf Bestellung 936 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() |
IPA50R280CEXKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 30.4W; TO220FP Drain-source voltage: 500V Drain current: 7.5A On-state resistance: 0.28Ω Type of transistor: N-MOSFET Power dissipation: 30.4W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220FP |
auf Bestellung 468 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() |
IPA50R950CEXKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; 25.7W; TO220FP Drain-source voltage: 500V Drain current: 2.4A On-state resistance: 0.95Ω Type of transistor: N-MOSFET Power dissipation: 25.7W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220FP |
auf Bestellung 113 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() |
IPA50R250CPXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 33W; TO220FP Drain-source voltage: 500V Drain current: 13A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 33W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220FP |
auf Bestellung 194 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() |
IPA50R190CEXKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP Drain-source voltage: 500V Drain current: 18.5A On-state resistance: 0.19Ω Type of transistor: N-MOSFET Power dissipation: 32W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220FP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPA50R199CPXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP Power dissipation: 139W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220FP Drain-source voltage: 500V Drain current: 17A On-state resistance: 0.199Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPA50R500CEXKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; 28W; TO220FP Drain-source voltage: 500V Drain current: 3.4A On-state resistance: 0.5Ω Type of transistor: N-MOSFET Power dissipation: 28W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220FP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPA50R399CPXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; 8.3W; TO220FP Power dissipation: 8.3W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220FP Drain-source voltage: 500V Drain current: 3.3A On-state resistance: 0.399Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPA50R520CPXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; TO220FP Drain-source voltage: 500V Drain current: 7.1A On-state resistance: 0.52Ω Type of transistor: N-MOSFET Power dissipation: 66W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220FP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPA50R800CEXKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 2.6A; 26.4W; TO220FP Drain-source voltage: 500V Drain current: 2.6A On-state resistance: 0.8Ω Type of transistor: N-MOSFET Power dissipation: 26.4W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220FP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPB110N20N3LF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 61A Power dissipation: 250W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPP110N20NAAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 88A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
BSS126IXTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
![]() |
IPB019N06L3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Case: PG-TO263-3 Drain-source voltage: 60V Drain current: 120A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar |
auf Bestellung 991 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() +1 |
IPB019N08N3G | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Case: PG-TO263-7 Drain-source voltage: 80V Drain current: 180A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IPB019N08N5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
![]() |
IPS80R900P7AKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 45W Case: IPAK SL Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: THT Gate charge: 15nC Kind of channel: enhancement Version: ESD |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() |
IPU80R900P7AKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 45W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 307 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() |
IPD80R900P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 45W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 15nC Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPN80R900P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 7W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 15nC Kind of package: reel Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IDH12G65C5 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; PG-TO220-2; 104W Case: PG-TO220-2 Max. off-state voltage: 650V Max. forward voltage: 1.8V Load current: 12A Semiconductor structure: single diode Max. forward impulse current: 83A Leakage current: 2.4µA Power dissipation: 104W Kind of package: tube Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Heatsink thickness: 1.17...137mm Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
1EDC30I12MHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A Type of integrated circuit: driver Kind of integrated circuit: high-side; IGBT gate driver Case: PG-DSO-8 Output current: -3...3A Mounting: SMD Number of channels: 1 Integrated circuit features: active Miller clamp; galvanically isolated Kind of package: reel; tape Technology: EiceDRIVER™ Topology: single transistor Voltage class: 600/650/1200V Supply voltage: 3.1...17V; 13...18V |
auf Bestellung 998 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() |
1EDI05I12AFXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: high-side; IGBT gate driver Case: PG-DSO-8 Output current: -0.5...0.5A Mounting: SMD Number of channels: 1 Integrated circuit features: galvanically isolated Kind of package: reel; tape Technology: EiceDRIVER™ Topology: single transistor Voltage class: 1.2kV Supply voltage: 3.1...17V; 13...35V |
auf Bestellung 2100 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
BFP640FH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
2ED300C17SROHSBPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV Type of semiconductor module: gate driver board Topology: IGBT half-bridge Case: AG-EICE Application: for medium and high power application Mounting: PCB Operating temperature: -25...85°C Technology: EiceDRIVER™; SiC Voltage class: 1.7kV Supply voltage: 14...16V DC Frequency: 60kHz Output current: 30A Kind of output: IGBT driver Integrated circuit features: galvanically isolated; integrated DC/DC converter |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
2ED300C17STROHSBPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV Type of semiconductor module: gate driver board Topology: IGBT half-bridge Case: AG-EICE Application: for medium and high power application Mounting: PCB Operating temperature: -40...85°C Technology: EiceDRIVER™ Voltage class: 1.7kV Supply voltage: 14...16V DC Frequency: 60kHz Output current: 30A Kind of output: IGBT driver Integrated circuit features: galvanically isolated; integrated DC/DC converter |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
![]() |
IRFH5250DTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Power dissipation: 3.6W Polarisation: unipolar Case: PQFN5X6 Kind of package: reel Mounting: SMD Technology: HEXFET® Kind of channel: enhancement Drain-source voltage: 25V Drain current: 40A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IRFH5250TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Power dissipation: 3.6W Polarisation: unipolar Case: PQFN5X6 Kind of package: reel Mounting: SMD Technology: HEXFET® Kind of channel: enhancement Drain-source voltage: 25V Drain current: 45A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
CY62157EV30LL-45BVI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
CY62157EV30LL-45BVXAT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
CY62157EV30LL-45ZSXAT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
CY62157EV30LL-45BVIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
CY62157EV30LL-45BVXA | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
CY62157EV30LL-45ZSXA | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
CY62157EV30LL-45ZXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 45ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
CY62157EV30LL-55ZSXE | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 55ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
CY62157EV30LL-45BVXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory Type of integrated circuit: SRAM memory |
auf Bestellung 3459 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
BFP183E7764HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
CY7C1011DV33-10BVXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 10ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
CY7C1011DV33-10ZSXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IPLU300N04S4R8XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
BSC093N15NS5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
![]() |
IPD025N06NATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3 Drain-source voltage: 60V Drain current: 90A On-state resistance: 2.5mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-TO252-3 |
auf Bestellung 1715 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
IPTC017N12NM6ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; PG-HDSOP-16 Drain-source voltage: 120V Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Case: PG-HDSOP-16 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
![]() |
BC858BE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
auf Bestellung 8980 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() |
BC858CE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() |
IPB020N04NGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 140A; 167W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Power dissipation: 167W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPB031N08N5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3 Power dissipation: 167W Polarisation: unipolar Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-TO263-3 Drain-source voltage: 80V Drain current: 120A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPB031NE7N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3 Power dissipation: 214W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-TO263-3 Drain-source voltage: 75V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IAUC60N04S6L030HATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 22A Pulsed drain current: 311A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IRFB7537PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.35 EUR |
42+ | 1.73 EUR |
70+ | 1.03 EUR |
74+ | 0.97 EUR |
IRFB7430PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Drain-source voltage: 40V
Drain current: 409A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Gate charge: 300nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Trade name: StrongIRFET
Mounting: THT
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Drain-source voltage: 40V
Drain current: 409A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Gate charge: 300nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Trade name: StrongIRFET
Mounting: THT
Case: TO220AB
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.75 EUR |
17+ | 4.26 EUR |
22+ | 3.26 EUR |
24+ | 3.09 EUR |
IRFB5620PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
24+ | 3.00 EUR |
39+ | 1.87 EUR |
41+ | 1.77 EUR |
CYUSB3326-88LTXI |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY8C21334-24PVXI | ![]() |
![]() |
auf Bestellung 2598 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
66+ | 7.16 EUR |
DZ600N12K |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Case: BG-PB501-1
Max. off-state voltage: 1.2kV
Max. forward voltage: 0.75V
Load current: 600A
Semiconductor structure: single diode
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Case: BG-PB501-1
Max. off-state voltage: 1.2kV
Max. forward voltage: 0.75V
Load current: 600A
Semiconductor structure: single diode
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 317.82 EUR |
IPP600N25N3GXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Case: PG-TO220-3
Drain-source voltage: 250V
Drain current: 25A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Case: PG-TO220-3
Drain-source voltage: 250V
Drain current: 25A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.65 EUR |
24+ | 2.99 EUR |
26+ | 2.82 EUR |
50+ | 2.72 EUR |
XMC4800E196K1536AAXQMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...125°C
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGB01N120H2ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 1.3A; 28W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 1.3A
Power dissipation: 28W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 3.5A
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Turn-on time: 20.9ns
Turn-off time: 493ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 1.3A; 28W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 1.3A
Power dissipation: 28W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 3.5A
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Turn-on time: 20.9ns
Turn-off time: 493ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFB3207PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFB7534PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Drain-source voltage: 60V
Drain current: 195A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 294W
Polarisation: unipolar
Kind of package: tube
Gate charge: 186nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Trade name: StrongIRFET
Mounting: THT
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Drain-source voltage: 60V
Drain current: 195A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 294W
Polarisation: unipolar
Kind of package: tube
Gate charge: 186nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Trade name: StrongIRFET
Mounting: THT
Case: TO220AB
auf Bestellung 936 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.04 EUR |
48+ | 1.50 EUR |
50+ | 1.43 EUR |
53+ | 1.36 EUR |
500+ | 1.30 EUR |
IPA50R280CEXKSA2 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 30.4W; TO220FP
Drain-source voltage: 500V
Drain current: 7.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 30.4W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 30.4W; TO220FP
Drain-source voltage: 500V
Drain current: 7.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 30.4W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
auf Bestellung 468 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.33 EUR |
81+ | 0.89 EUR |
86+ | 0.84 EUR |
IPA50R950CEXKSA2 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; 25.7W; TO220FP
Drain-source voltage: 500V
Drain current: 2.4A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 25.7W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; 25.7W; TO220FP
Drain-source voltage: 500V
Drain current: 2.4A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 25.7W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
54+ | 1.33 EUR |
113+ | 0.63 EUR |
IPA50R250CPXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 33W; TO220FP
Drain-source voltage: 500V
Drain current: 13A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 33W; TO220FP
Drain-source voltage: 500V
Drain current: 13A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.32 EUR |
32+ | 2.29 EUR |
34+ | 2.16 EUR |
IPA50R190CEXKSA2 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP
Drain-source voltage: 500V
Drain current: 18.5A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 32W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP
Drain-source voltage: 500V
Drain current: 18.5A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 32W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPA50R199CPXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP
Power dissipation: 139W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Drain-source voltage: 500V
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP
Power dissipation: 139W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Drain-source voltage: 500V
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPA50R500CEXKSA2 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; 28W; TO220FP
Drain-source voltage: 500V
Drain current: 3.4A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; 28W; TO220FP
Drain-source voltage: 500V
Drain current: 3.4A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPA50R399CPXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; 8.3W; TO220FP
Power dissipation: 8.3W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Drain-source voltage: 500V
Drain current: 3.3A
On-state resistance: 0.399Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; 8.3W; TO220FP
Power dissipation: 8.3W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Drain-source voltage: 500V
Drain current: 3.3A
On-state resistance: 0.399Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPA50R520CPXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; TO220FP
Drain-source voltage: 500V
Drain current: 7.1A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 66W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; TO220FP
Drain-source voltage: 500V
Drain current: 7.1A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 66W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPA50R800CEXKSA2 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.6A; 26.4W; TO220FP
Drain-source voltage: 500V
Drain current: 2.6A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 26.4W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.6A; 26.4W; TO220FP
Drain-source voltage: 500V
Drain current: 2.6A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 26.4W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB110N20N3LF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 61A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 61A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP110N20NAAKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS126IXTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.07 EUR |
IPB019N06L3GATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
auf Bestellung 991 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.60 EUR |
32+ | 2.25 EUR |
34+ | 2.12 EUR |
200+ | 2.04 EUR |
IPB019N08N3G |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO263-7
Drain-source voltage: 80V
Drain current: 180A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO263-7
Drain-source voltage: 80V
Drain current: 180A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB019N08N5ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 2.99 EUR |
IPS80R900P7AKMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 8.94 EUR |
IPU80R900P7AKMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 307 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
54+ | 1.34 EUR |
65+ | 1.11 EUR |
98+ | 0.74 EUR |
103+ | 0.70 EUR |
150+ | 0.69 EUR |
IPD80R900P7ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPN80R900P7ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IDH12G65C5 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; PG-TO220-2; 104W
Case: PG-TO220-2
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 12A
Semiconductor structure: single diode
Max. forward impulse current: 83A
Leakage current: 2.4µA
Power dissipation: 104W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Heatsink thickness: 1.17...137mm
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; PG-TO220-2; 104W
Case: PG-TO220-2
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 12A
Semiconductor structure: single diode
Max. forward impulse current: 83A
Leakage current: 2.4µA
Power dissipation: 104W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Heatsink thickness: 1.17...137mm
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1EDC30I12MHXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -3...3A
Mounting: SMD
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Topology: single transistor
Voltage class: 600/650/1200V
Supply voltage: 3.1...17V; 13...18V
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -3...3A
Mounting: SMD
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Topology: single transistor
Voltage class: 600/650/1200V
Supply voltage: 3.1...17V; 13...18V
auf Bestellung 998 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.68 EUR |
26+ | 2.80 EUR |
28+ | 2.65 EUR |
50+ | 2.55 EUR |
1EDI05I12AFXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -0.5...0.5A
Mounting: SMD
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -0.5...0.5A
Mounting: SMD
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
auf Bestellung 2100 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
37+ | 1.96 EUR |
41+ | 1.74 EUR |
52+ | 1.39 EUR |
55+ | 1.32 EUR |
250+ | 1.27 EUR |
BFP640FH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.22 EUR |
2ED300C17SROHSBPSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Type of semiconductor module: gate driver board
Topology: IGBT half-bridge
Case: AG-EICE
Application: for medium and high power application
Mounting: PCB
Operating temperature: -25...85°C
Technology: EiceDRIVER™; SiC
Voltage class: 1.7kV
Supply voltage: 14...16V DC
Frequency: 60kHz
Output current: 30A
Kind of output: IGBT driver
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Type of semiconductor module: gate driver board
Topology: IGBT half-bridge
Case: AG-EICE
Application: for medium and high power application
Mounting: PCB
Operating temperature: -25...85°C
Technology: EiceDRIVER™; SiC
Voltage class: 1.7kV
Supply voltage: 14...16V DC
Frequency: 60kHz
Output current: 30A
Kind of output: IGBT driver
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2ED300C17STROHSBPSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Type of semiconductor module: gate driver board
Topology: IGBT half-bridge
Case: AG-EICE
Application: for medium and high power application
Mounting: PCB
Operating temperature: -40...85°C
Technology: EiceDRIVER™
Voltage class: 1.7kV
Supply voltage: 14...16V DC
Frequency: 60kHz
Output current: 30A
Kind of output: IGBT driver
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Type of semiconductor module: gate driver board
Topology: IGBT half-bridge
Case: AG-EICE
Application: for medium and high power application
Mounting: PCB
Operating temperature: -40...85°C
Technology: EiceDRIVER™
Voltage class: 1.7kV
Supply voltage: 14...16V DC
Frequency: 60kHz
Output current: 30A
Kind of output: IGBT driver
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFH5250DTRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Case: PQFN5X6
Kind of package: reel
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 25V
Drain current: 40A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Case: PQFN5X6
Kind of package: reel
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 25V
Drain current: 40A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFH5250TRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Case: PQFN5X6
Kind of package: reel
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 25V
Drain current: 45A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Case: PQFN5X6
Kind of package: reel
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 25V
Drain current: 45A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62157EV30LL-45BVI |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62157EV30LL-45BVXAT |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62157EV30LL-45ZSXAT |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62157EV30LL-45BVIT |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62157EV30LL-45BVXA |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62157EV30LL-45ZSXA |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62157EV30LL-45ZXIT |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62157EV30LL-55ZSXE |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 55ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 55ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62157EV30LL-45BVXI |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory
Type of integrated circuit: SRAM memory
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory
Type of integrated circuit: SRAM memory
auf Bestellung 3459 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
480+ | 4.42 EUR |
BFP183E7764HTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.13 EUR |
CY7C1011DV33-10BVXIT |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1011DV33-10ZSXIT |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPLU300N04S4R8XTMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2000+ | 4.29 EUR |
BSC093N15NS5ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 2.10 EUR |
IPD025N06NATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3
Drain-source voltage: 60V
Drain current: 90A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO252-3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3
Drain-source voltage: 60V
Drain current: 90A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO252-3
auf Bestellung 1715 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.56 EUR |
35+ | 2.10 EUR |
50+ | 2.03 EUR |
IPTC017N12NM6ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; PG-HDSOP-16
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: PG-HDSOP-16
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; PG-HDSOP-16
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: PG-HDSOP-16
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC858BE6327 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 8980 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
725+ | 0.10 EUR |
1115+ | 0.06 EUR |
1260+ | 0.06 EUR |
1455+ | 0.05 EUR |
1540+ | 0.05 EUR |
BC858CE6327 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
120+ | 0.60 EUR |
IPB020N04NGATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; 167W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Power dissipation: 167W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; 167W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Power dissipation: 167W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB031N08N5ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3
Power dissipation: 167W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3
Power dissipation: 167W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB031NE7N3GATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3
Power dissipation: 214W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3
Power dissipation: 214W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IAUC60N04S6L030HATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH