Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (152101) > Seite 2496 nach 2536
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IRS20752LTRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,gate driver; SOT23-6 Type of integrated circuit: driver Mounting: SMD Supply voltage: 10...18V DC Number of channels: 1 Case: SOT23-6 Kind of package: reel; tape Voltage class: 200V Kind of integrated circuit: gate driver; high-side Topology: single transistor Operating temperature: -40...125°C Output current: -240...160mA Turn-off time: 255ns Turn-on time: 225ns |
auf Bestellung 2647 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP064NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 98A; 150W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 98A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Gate charge: 113.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 843 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP3206PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 280W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 200A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRLML5103TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.61A Power dissipation: 0.54W Case: SOT23 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3415PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 43A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: THT Gate charge: 133.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 364 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3415STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 43A Power dissipation: 200W Case: TO262 Mounting: THT Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFP150NPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Power dissipation: 160W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 357 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP054NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 72A Power dissipation: 130W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Gate charge: 86.7nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 391 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP5216H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 2W Case: SOT223 Mounting: SMD Frequency: 125MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ICE3A2065ELJFKLA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; PWM controller; 10.3A; 100kHz; Ch: 1; DIP8; flyback; 0÷75% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 10.3A Frequency: 0.1MHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: -25...130°C Topology: flyback Input voltage: 80...265V Breakdown voltage: 650V Duty cycle factor: 0...75% Power: 57/28W Application: SMPS Operating voltage: 10.5...26V DC |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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ICE3AR0680JZXKLA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; PWM controller; 20A; 100kHz; Ch: 1; DIP7; flyback; Ubr: 800V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Case: DIP7 Output current: 20A Number of channels: 1 Mounting: THT Operating temperature: -25...130°C Application: SMPS Input voltage: 80...265V Duty cycle factor: 0...75% Power: 82/52W Operating voltage: 10.5...25V DC Breakdown voltage: 800V Frequency: 0.1MHz Topology: flyback |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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SPA11N60C3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Power dissipation: 33W Case: PG-TO220 FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of channel: enhancement Pulsed drain current: 33A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SPB11N60C3ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO263 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Power dissipation: 125W Case: PG-TO263 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 33A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SPP11N60C3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Power dissipation: 125W Case: PG-TO220 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of channel: enhancement Pulsed drain current: 33A |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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SPW35N60C3 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 21.9A Power dissipation: 313W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP3306PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 220W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 160A Power dissipation: 220W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Gate charge: 85nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP4468PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC Kind of package: tube Polarisation: unipolar Kind of channel: enhancement Technology: HEXFET® Type of transistor: N-MOSFET Mounting: THT Gate charge: 360nC On-state resistance: 2.6mΩ Power dissipation: 520W Drain current: 290A Gate-source voltage: ±20V Drain-source voltage: 100V Case: TO247AC |
auf Bestellung 389 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB4227PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB Kind of channel: enhancement Mounting: THT Technology: HEXFET® Type of transistor: N-MOSFET Kind of package: tube Gate charge: 70nC On-state resistance: 26mΩ Gate-source voltage: ±30V Drain current: 65A Power dissipation: 190W Drain-source voltage: 200V Case: TO220AB Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRLML6402TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Power dissipation: 1.3W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 12867 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC100N03MSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8 Mounting: SMD Power dissipation: 30W Polarisation: unipolar Features of semiconductor devices: logic level Gate charge: 5.8nC Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 176A Case: PG-TDSON-8 Drain-source voltage: 30V Drain current: 28A On-state resistance: 10mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSC100N06LS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 45nC Kind of channel: enhancement Features of semiconductor devices: logic level Pulsed drain current: 200A |
auf Bestellung 3630 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP90N20DPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 94A; 580W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 94A Power dissipation: 580W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 235 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP075N15N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Drain-source voltage: 150V Drain current: 100A On-state resistance: 7.5mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7416TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -10A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 2464 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF5210PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 200W; TO220AB Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -40A Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 0.12µC On-state resistance: 60mΩ Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF5210STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -40A Power dissipation: 3.8W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF5210STRRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -40A Power dissipation: 3.8W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BAS140WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW Mounting: SMD Type of diode: Schottky switching Semiconductor structure: single diode Case: SOD323 Load current: 0.12A Max. forward impulse current: 0.2A Power dissipation: 0.25W Max. off-state voltage: 40V |
auf Bestellung 6255 Stücke: Lieferzeit 14-21 Tag (e) |
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ICE2QR0665XKLA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; PWM controller; Ch: 1; DIP8; 10.5÷24VDC; SMPS; Ubr: 650V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 39...65kHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: -25...130°C Topology: flyback Input voltage: 85...265V Breakdown voltage: 650V Application: SMPS Operating voltage: 10.5...24V DC |
auf Bestellung 81 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7389TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 7.3/-5.3A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 29/58mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFI3205PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 56A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Gate charge: 113.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 160 Stücke: Lieferzeit 14-21 Tag (e) |
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IR4427PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -1.5...1.5A Power: 1W Number of channels: 2 Supply voltage: 6...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Turn-on time: 85ns Turn-off time: 65ns |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
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IR4427STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -1.5...1.5A Power: 625mW Number of channels: 2 Supply voltage: 6...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Turn-on time: 85ns Turn-off time: 65ns |
auf Bestellung 2556 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB4310PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB4310ZPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 127A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 71 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR2905TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 30A; Idm: 160A; 110W; DPAK Polarisation: unipolar Kind of package: reel Case: DPAK Kind of channel: enhancement Mounting: SMD Technology: HEXFET® Features of semiconductor devices: logic level Type of transistor: N-MOSFET Drain-source voltage: 55V Pulsed drain current: 160A Drain current: 30A Gate charge: 48nC On-state resistance: 27mΩ Power dissipation: 110W Gate-source voltage: ±16V |
auf Bestellung 3487 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR81WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns Power dissipation: 0.1W Case: SOT343 Mounting: SMD Load current: 0.1A Max. forward voltage: 1V Max. off-state voltage: 30V Semiconductor structure: single diode Kind of package: reel; tape Features of semiconductor devices: RF Type of diode: switching Reverse recovery time: 80ns |
auf Bestellung 960 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS28WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.2A; SOT343; 250mW; reel,tape Power dissipation: 0.25W Case: SOT343 Mounting: SMD Load current: 0.2A Max. off-state voltage: 85V Semiconductor structure: double independent Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Type of diode: switching |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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BC847CWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.33W Case: SOT323 Mounting: SMD Collector-emitter voltage: 45V Frequency: 250MHz Collector current: 0.1A |
auf Bestellung 4972 Stücke: Lieferzeit 14-21 Tag (e) |
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BC849CWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.25W; SOT323 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.25W Case: SOT323 Mounting: SMD Collector-emitter voltage: 30V Current gain: 420...800 Frequency: 250MHz Collector current: 0.1A |
auf Bestellung 1017 Stücke: Lieferzeit 14-21 Tag (e) |
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BC858CWH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.25W; SOT323 Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.25W Case: SOT323 Mounting: SMD Collector-emitter voltage: 30V Frequency: 250MHz Collector current: 0.1A |
auf Bestellung 3047 Stücke: Lieferzeit 14-21 Tag (e) |
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BC860CWH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323 Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.25W Case: SOT323 Mounting: SMD Collector-emitter voltage: 45V Frequency: 250MHz Collector current: 0.1A |
auf Bestellung 2865 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR108WH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.25W Case: SOT323 Mounting: SMD Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Frequency: 170MHz Kind of transistor: BRT Collector current: 0.1A |
auf Bestellung 475 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR116WH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.25W Case: SOT323 Mounting: SMD Collector-emitter voltage: 50V Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Frequency: 150MHz Kind of transistor: BRT Collector current: 0.1A |
auf Bestellung 4650 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR129WH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.25W Case: SOT323 Mounting: SMD Collector-emitter voltage: 50V Base resistor: 10kΩ Frequency: 150MHz Kind of transistor: BRT Collector current: 0.1A |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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ICE2A180ZXKLA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; PWM controller; 4.1A; 100kHz; Ch: 1; DIP7; flyback; 0÷77% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 0.1MHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -25...130°C Topology: flyback Input voltage: 80...265V Breakdown voltage: 800V Duty cycle factor: 0...77% Application: SMPS Operating voltage: 8.5...21V DC Power: 29/17W Output current: 4.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ICE2QS02GXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 20...150kHz Number of channels: 1 Case: PG-DSO-8 Mounting: SMD Operating temperature: -25...125°C Topology: flyback Input voltage: 80...265V Application: SMPS Operating voltage: 11...25V DC |
auf Bestellung 2229 Stücke: Lieferzeit 14-21 Tag (e) |
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ICE3BR0665JXKLA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; PWM controller; 4.8A; 67kHz; Ch: 1; DIP8; flyback; Ubr: 650V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 4.8A Frequency: 67kHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: -40...150°C Topology: flyback Input voltage: 80...265V Breakdown voltage: 650V Duty cycle factor: 0...80% Application: SMPS Operating voltage: 10.5...25V DC |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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ICE3BR1765JXKLA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; PWM controller; 1.5A; 65kHz; Ch: 1; DIP8; flyback; Ubr: 650V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1.5A Frequency: 65kHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: -40...150°C Topology: flyback Input voltage: 80...265V Breakdown voltage: 650V Duty cycle factor: 0...75% Application: SMPS Operating voltage: 10.5...25V DC |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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ICE3RBR0665JZXKLA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 65kHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -40...130°C Topology: flyback Input voltage: 85...265V Breakdown voltage: 650V Duty cycle factor: 0...75% Power: 71/47W Application: SMPS Operating voltage: 10.5...25V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ICE3RBR1765JZXKLA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 65kHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -40...130°C Topology: flyback Input voltage: 85...265V Breakdown voltage: 650V Duty cycle factor: 0...75% Power: 44/29W Application: SMPS Operating voltage: 10.5...25V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ICE3RBR4765JZXKLA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 65kHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -40...130°C Topology: flyback Input voltage: 85...265V Breakdown voltage: 650V Duty cycle factor: 0...75% Power: 26/18W Application: SMPS Operating voltage: 10.5...25V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
FP40R12KT3BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 40A Case: AG-ECONO2-5 Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 80A Power dissipation: 210W Technology: EconoPIM™ 2 Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BSC0906NSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 30W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 53A Power dissipation: 30W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 2399 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7425TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -15A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 942 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB3077PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 75V; 210A; 370W; TO220AB Kind of channel: enhancement Mounting: THT Technology: HEXFET® Kind of package: tube Type of transistor: N-MOSFET Case: TO220AB Polarisation: unipolar Gate charge: 160nC On-state resistance: 3.3mΩ Gate-source voltage: ±20V Drain-source voltage: 75V Drain current: 210A Power dissipation: 370W |
auf Bestellung 632 Stücke: Lieferzeit 14-21 Tag (e) |
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BGA524N6E6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3V; TSNP6; reel,tape Type of integrated circuit: RF amplifier Bandwidth: 1550...1615MHz Mounting: SMT Number of channels: 1 Case: TSNP6 Operating temperature: -40...85°C Kind of package: reel; tape Integrated circuit features: low noise Application: global navigation satellite systems (GPS) Noise Figure: 0.55dB Operating voltage: 1.5...3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BTS640S2G | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 11.4A; Ch: 1; N-Channel; SMD; TO263-7 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 11.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO263-7 On-state resistance: 27mΩ Supply voltage: 5...34V DC Technology: Classic PROFET |
auf Bestellung 245 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2183SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: charge pump; dead time; integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 180ns Turn-off time: 0.22µs Protection: short circuit protection SCP; undervoltage UVP |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS2103WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 250V; 0.25A; SOD323; 250mW; reel,tape Load current: 0.25A Power dissipation: 0.25W Max. off-state voltage: 250V Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: SOD323 Type of diode: switching Features of semiconductor devices: ultrafast switching |
auf Bestellung 7930 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS20752LTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Case: SOT23-6
Kind of package: reel; tape
Voltage class: 200V
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Operating temperature: -40...125°C
Output current: -240...160mA
Turn-off time: 255ns
Turn-on time: 225ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Case: SOT23-6
Kind of package: reel; tape
Voltage class: 200V
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Operating temperature: -40...125°C
Output current: -240...160mA
Turn-off time: 255ns
Turn-on time: 225ns
auf Bestellung 2647 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
79+ | 0.92 EUR |
88+ | 0.82 EUR |
94+ | 0.76 EUR |
114+ | 0.63 EUR |
121+ | 0.59 EUR |
1000+ | 0.57 EUR |
IRFP064NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 98A; 150W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 98A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 98A; 150W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 98A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 843 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.57 EUR |
31+ | 2.32 EUR |
33+ | 2.17 EUR |
56+ | 1.29 EUR |
59+ | 1.22 EUR |
IRFP3206PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 280W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 280W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLML5103TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.61A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.61A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.63 EUR |
IRF3415PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 364 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.3 EUR |
38+ | 1.9 EUR |
58+ | 1.24 EUR |
61+ | 1.17 EUR |
IRF3415STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of package: reel
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFP150NPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 357 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.52 EUR |
32+ | 2.3 EUR |
71+ | 1.02 EUR |
74+ | 0.97 EUR |
IRFP054NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 391 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.36 EUR |
39+ | 1.84 EUR |
40+ | 1.83 EUR |
42+ | 1.73 EUR |
BCP5216H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 125MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 125MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ICE3A2065ELJFKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 10.3A; 100kHz; Ch: 1; DIP8; flyback; 0÷75%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 10.3A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 57/28W
Application: SMPS
Operating voltage: 10.5...26V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 10.3A; 100kHz; Ch: 1; DIP8; flyback; 0÷75%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 10.3A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 57/28W
Application: SMPS
Operating voltage: 10.5...26V DC
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.42 EUR |
25+ | 2.9 EUR |
31+ | 2.36 EUR |
33+ | 2.23 EUR |
ICE3AR0680JZXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20A; 100kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Case: DIP7
Output current: 20A
Number of channels: 1
Mounting: THT
Operating temperature: -25...130°C
Application: SMPS
Input voltage: 80...265V
Duty cycle factor: 0...75%
Power: 82/52W
Operating voltage: 10.5...25V DC
Breakdown voltage: 800V
Frequency: 0.1MHz
Topology: flyback
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20A; 100kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Case: DIP7
Output current: 20A
Number of channels: 1
Mounting: THT
Operating temperature: -25...130°C
Application: SMPS
Input voltage: 80...265V
Duty cycle factor: 0...75%
Power: 82/52W
Operating voltage: 10.5...25V DC
Breakdown voltage: 800V
Frequency: 0.1MHz
Topology: flyback
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.11 EUR |
SPA11N60C3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 33W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 33W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SPB11N60C3ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO263
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 125W
Case: PG-TO263
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 33A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO263
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 125W
Case: PG-TO263
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 33A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SPP11N60C3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 125W
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 125W
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.66 EUR |
41+ | 1.74 EUR |
44+ | 1.66 EUR |
SPW35N60C3 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.9A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.9A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.28 EUR |
IRFP3306PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 220W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 220W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 220W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 220W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
IRFP4468PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: THT
Gate charge: 360nC
On-state resistance: 2.6mΩ
Power dissipation: 520W
Drain current: 290A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Case: TO247AC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: THT
Gate charge: 360nC
On-state resistance: 2.6mΩ
Power dissipation: 520W
Drain current: 290A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Case: TO247AC
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 10.15 EUR |
22+ | 3.4 EUR |
23+ | 3.22 EUR |
IRFB4227PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: tube
Gate charge: 70nC
On-state resistance: 26mΩ
Gate-source voltage: ±30V
Drain current: 65A
Power dissipation: 190W
Drain-source voltage: 200V
Case: TO220AB
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: tube
Gate charge: 70nC
On-state resistance: 26mΩ
Gate-source voltage: ±30V
Drain current: 65A
Power dissipation: 190W
Drain-source voltage: 200V
Case: TO220AB
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLML6402TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 12867 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
230+ | 0.31 EUR |
317+ | 0.23 EUR |
365+ | 0.2 EUR |
782+ | 0.092 EUR |
834+ | 0.086 EUR |
9000+ | 0.084 EUR |
BSC100N03MSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8
Mounting: SMD
Power dissipation: 30W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 5.8nC
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 176A
Case: PG-TDSON-8
Drain-source voltage: 30V
Drain current: 28A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8
Mounting: SMD
Power dissipation: 30W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 5.8nC
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 176A
Case: PG-TDSON-8
Drain-source voltage: 30V
Drain current: 28A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC100N06LS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Pulsed drain current: 200A
auf Bestellung 3630 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
53+ | 1.37 EUR |
77+ | 0.93 EUR |
88+ | 0.82 EUR |
167+ | 0.43 EUR |
176+ | 0.41 EUR |
IRFP90N20DPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 94A; 580W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 94A
Power dissipation: 580W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 94A; 580W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 94A
Power dissipation: 580W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.24 EUR |
22+ | 3.32 EUR |
23+ | 3.15 EUR |
IPP075N15N3GXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 150V
Drain current: 100A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 150V
Drain current: 100A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.42 EUR |
18+ | 4.13 EUR |
19+ | 3.9 EUR |
IRF7416TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2464 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
74+ | 0.97 EUR |
106+ | 0.68 EUR |
117+ | 0.61 EUR |
200+ | 0.36 EUR |
211+ | 0.34 EUR |
IRF5210PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 200W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.12µC
On-state resistance: 60mΩ
Gate-source voltage: ±20V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 200W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.12µC
On-state resistance: 60mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF5210STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF5210STRRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS140WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW
Mounting: SMD
Type of diode: Schottky switching
Semiconductor structure: single diode
Case: SOD323
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW
Mounting: SMD
Type of diode: Schottky switching
Semiconductor structure: single diode
Case: SOD323
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. off-state voltage: 40V
auf Bestellung 6255 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
274+ | 0.26 EUR |
438+ | 0.16 EUR |
1137+ | 0.063 EUR |
1202+ | 0.059 EUR |
ICE2QR0665XKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: A/D converters - integrated circuits
Description: IC: PMIC; PWM controller; Ch: 1; DIP8; 10.5÷24VDC; SMPS; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Application: SMPS
Operating voltage: 10.5...24V DC
Category: A/D converters - integrated circuits
Description: IC: PMIC; PWM controller; Ch: 1; DIP8; 10.5÷24VDC; SMPS; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Application: SMPS
Operating voltage: 10.5...24V DC
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.89 EUR |
30+ | 2.4 EUR |
32+ | 2.29 EUR |
33+ | 2.22 EUR |
34+ | 2.16 EUR |
35+ | 2.07 EUR |
IRF7389TRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.3/-5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.3/-5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFI3205PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.89 EUR |
24+ | 3.07 EUR |
31+ | 2.35 EUR |
33+ | 2.22 EUR |
50+ | 2.14 EUR |
IR4427PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -1.5...1.5A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 65ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -1.5...1.5A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 65ns
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.2 EUR |
IR4427STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -1.5...1.5A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 85ns
Turn-off time: 65ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -1.5...1.5A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 85ns
Turn-off time: 65ns
auf Bestellung 2556 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 2.02 EUR |
48+ | 1.52 EUR |
49+ | 1.47 EUR |
50+ | 1.44 EUR |
52+ | 1.4 EUR |
IRFB4310PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.3 EUR |
37+ | 1.94 EUR |
40+ | 1.83 EUR |
250+ | 1.77 EUR |
IRFB4310ZPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.23 EUR |
37+ | 1.96 EUR |
39+ | 1.84 EUR |
IRLR2905TRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; Idm: 160A; 110W; DPAK
Polarisation: unipolar
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Pulsed drain current: 160A
Drain current: 30A
Gate charge: 48nC
On-state resistance: 27mΩ
Power dissipation: 110W
Gate-source voltage: ±16V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; Idm: 160A; 110W; DPAK
Polarisation: unipolar
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Pulsed drain current: 160A
Drain current: 30A
Gate charge: 48nC
On-state resistance: 27mΩ
Power dissipation: 110W
Gate-source voltage: ±16V
auf Bestellung 3487 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.89 EUR |
53+ | 1.36 EUR |
61+ | 1.18 EUR |
149+ | 0.48 EUR |
158+ | 0.45 EUR |
BAR81WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Type of diode: switching
Reverse recovery time: 80ns
Category: Diodes - others
Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Type of diode: switching
Reverse recovery time: 80ns
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
69+ | 1.04 EUR |
177+ | 0.41 EUR |
199+ | 0.36 EUR |
227+ | 0.32 EUR |
240+ | 0.3 EUR |
BAS28WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT343; 250mW; reel,tape
Power dissipation: 0.25W
Case: SOT343
Mounting: SMD
Load current: 0.2A
Max. off-state voltage: 85V
Semiconductor structure: double independent
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT343; 250mW; reel,tape
Power dissipation: 0.25W
Case: SOT343
Mounting: SMD
Load current: 0.2A
Max. off-state voltage: 85V
Semiconductor structure: double independent
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Type of diode: switching
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
BC847CWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 45V
Frequency: 250MHz
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 45V
Frequency: 250MHz
Collector current: 0.1A
auf Bestellung 4972 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
286+ | 0.25 EUR |
500+ | 0.14 EUR |
637+ | 0.11 EUR |
1309+ | 0.055 EUR |
1386+ | 0.052 EUR |
BC849CWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 30V
Current gain: 420...800
Frequency: 250MHz
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 30V
Current gain: 420...800
Frequency: 250MHz
Collector current: 0.1A
auf Bestellung 1017 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
788+ | 0.091 EUR |
1017+ | 0.07 EUR |
BC858CWH6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 30V
Frequency: 250MHz
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 30V
Frequency: 250MHz
Collector current: 0.1A
auf Bestellung 3047 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2193+ | 0.033 EUR |
2778+ | 0.026 EUR |
2959+ | 0.024 EUR |
BC860CWH6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 45V
Frequency: 250MHz
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 45V
Frequency: 250MHz
Collector current: 0.1A
auf Bestellung 2865 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
740+ | 0.097 EUR |
995+ | 0.072 EUR |
1130+ | 0.063 EUR |
1300+ | 0.055 EUR |
1375+ | 0.052 EUR |
BCR108WH6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 170MHz
Kind of transistor: BRT
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 170MHz
Kind of transistor: BRT
Collector current: 0.1A
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
380+ | 0.19 EUR |
475+ | 0.16 EUR |
BCR116WH6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 150MHz
Kind of transistor: BRT
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 150MHz
Kind of transistor: BRT
Collector current: 0.1A
auf Bestellung 4650 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
410+ | 0.17 EUR |
855+ | 0.084 EUR |
945+ | 0.076 EUR |
1235+ | 0.058 EUR |
1305+ | 0.055 EUR |
BCR129WH6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Frequency: 150MHz
Kind of transistor: BRT
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Frequency: 150MHz
Kind of transistor: BRT
Collector current: 0.1A
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
ICE2A180ZXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.1A; 100kHz; Ch: 1; DIP7; flyback; 0÷77%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...77%
Application: SMPS
Operating voltage: 8.5...21V DC
Power: 29/17W
Output current: 4.1A
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.1A; 100kHz; Ch: 1; DIP7; flyback; 0÷77%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...77%
Application: SMPS
Operating voltage: 8.5...21V DC
Power: 29/17W
Output current: 4.1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ICE2QS02GXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 20...150kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: flyback
Input voltage: 80...265V
Application: SMPS
Operating voltage: 11...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 20...150kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: flyback
Input voltage: 80...265V
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 2229 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.56 EUR |
64+ | 1.13 EUR |
70+ | 1.03 EUR |
74+ | 0.97 EUR |
100+ | 0.93 EUR |
ICE3BR0665JXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.8A; 67kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 4.8A
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Application: SMPS
Operating voltage: 10.5...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.8A; 67kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 4.8A
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Application: SMPS
Operating voltage: 10.5...25V DC
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.46 EUR |
ICE3BR1765JXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 65kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Frequency: 65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Application: SMPS
Operating voltage: 10.5...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 65kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Frequency: 65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Application: SMPS
Operating voltage: 10.5...25V DC
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
30+ | 2.39 EUR |
ICE3RBR0665JZXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 71/47W
Application: SMPS
Operating voltage: 10.5...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 71/47W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ICE3RBR1765JZXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 44/29W
Application: SMPS
Operating voltage: 10.5...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 44/29W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ICE3RBR4765JZXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 26/18W
Application: SMPS
Operating voltage: 10.5...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 26/18W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FP40R12KT3BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 210W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 210W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC0906NSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2399 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
81+ | 0.89 EUR |
120+ | 0.6 EUR |
156+ | 0.46 EUR |
173+ | 0.41 EUR |
190+ | 0.38 EUR |
IRF7425TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 942 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
47+ | 1.54 EUR |
61+ | 1.17 EUR |
76+ | 0.94 EUR |
81+ | 0.89 EUR |
100+ | 0.87 EUR |
IRFB3077PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; 370W; TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO220AB
Polarisation: unipolar
Gate charge: 160nC
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 210A
Power dissipation: 370W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; 370W; TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO220AB
Polarisation: unipolar
Gate charge: 160nC
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 210A
Power dissipation: 370W
auf Bestellung 632 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.53 EUR |
34+ | 2.14 EUR |
44+ | 1.66 EUR |
46+ | 1.56 EUR |
BGA524N6E6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD operational amplifiers
Description: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3V; TSNP6; reel,tape
Type of integrated circuit: RF amplifier
Bandwidth: 1550...1615MHz
Mounting: SMT
Number of channels: 1
Case: TSNP6
Operating temperature: -40...85°C
Kind of package: reel; tape
Integrated circuit features: low noise
Application: global navigation satellite systems (GPS)
Noise Figure: 0.55dB
Operating voltage: 1.5...3.3V
Category: SMD operational amplifiers
Description: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3V; TSNP6; reel,tape
Type of integrated circuit: RF amplifier
Bandwidth: 1550...1615MHz
Mounting: SMT
Number of channels: 1
Case: TSNP6
Operating temperature: -40...85°C
Kind of package: reel; tape
Integrated circuit features: low noise
Application: global navigation satellite systems (GPS)
Noise Figure: 0.55dB
Operating voltage: 1.5...3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTS640S2G |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 11.4A; Ch: 1; N-Channel; SMD; TO263-7
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 11.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-7
On-state resistance: 27mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 11.4A; Ch: 1; N-Channel; SMD; TO263-7
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 11.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-7
On-state resistance: 27mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.78 EUR |
19+ | 3.95 EUR |
20+ | 3.73 EUR |
IR2183SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: short circuit protection SCP; undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.88 EUR |
21+ | 3.53 EUR |
22+ | 3.33 EUR |
BAS2103WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOD323; 250mW; reel,tape
Load current: 0.25A
Power dissipation: 0.25W
Max. off-state voltage: 250V
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Type of diode: switching
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOD323; 250mW; reel,tape
Load current: 0.25A
Power dissipation: 0.25W
Max. off-state voltage: 250V
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Type of diode: switching
Features of semiconductor devices: ultrafast switching
auf Bestellung 7930 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
334+ | 0.21 EUR |
382+ | 0.19 EUR |
538+ | 0.13 EUR |
627+ | 0.11 EUR |
1069+ | 0.067 EUR |
1132+ | 0.063 EUR |