Suchergebnisse für "40N60" : > 60

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FGH40N60SFD FGH40N60SFD
Produktcode: 201597 		China fgh40n60sfd.pdf Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600 V
Vce: 2,3 V
Ic 25: 80 A
Ic 100: 40 A
auf Bestellung 97 Stück:
Lieferzeit 21-28 Tag (e)
FGH40N60SFD (FGH40N60SFDTU) FGH40N60SFD (FGH40N60SFDTU)
Produktcode: 79400 		FAIR fgh40n60sfd.pdf Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600 V
Vce: 2,3 V
Ic 25: 80 A
Ic 100: 40 A
auf Bestellung 2 Stück:
Lieferzeit 21-28 Tag (e)
erwartet 300 Stück:
200 Stück - erwartet 20.05.2024
100 Stück - erwartet 12.05.2024
1+2.46 EUR
FGH40N60SMD FGH40N60SMD
Produktcode: 63296 		FAIR fgh40n60smd-d.pdf Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 2,1
Ic 25: 80
Ic 100: 40
Pd 25: 349
td(on)/td(off) 100-150 Grad: 01.12.1992
auf Bestellung 123 Stück:
Lieferzeit 21-28 Tag (e)
1+2.8 EUR
FGA40N60UFDTU FGA40N60UFDTU Fairchild Semiconductor FAIRS25258-1.pdf?t.download=true&u=5oefqw Description: IGBT, 40A, 600V, N-CHANNEL
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
auf Bestellung 142 Stücke:
Lieferzeit 21-28 Tag (e)
142+5.64 EUR
Mindestbestellmenge: 142
FGAF40N60SMD ON-Semicoductor fgaf40n60smd-d.pdf IGBT 600V 80A 115W   FGAF40N60SMD TFGAF40N60smd
Anzahl je Verpackung: 2 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
4+13.58 EUR
Mindestbestellmenge: 4
FGAF40N60UFDTU FGAF40N60UFDTU Fairchild Semiconductor FAIRS25147-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 100 W
auf Bestellung 2512 Stücke:
Lieferzeit 21-28 Tag (e)
122+5.95 EUR
Mindestbestellmenge: 122
FGAF40N60UFTU FGAF40N60UFTU onsemi fgaf40n60uf-d.pdf Description: IGBT 600V 40A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 100 W
auf Bestellung 81 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.14 EUR
30+ 6.44 EUR
Mindestbestellmenge: 4
FGAF40N60UFTU FGAF40N60UFTU Fairchild Semiconductor FAIRS46118-1.pdf?t.download=true&u=5oefqw Description: IGBT
Packaging: Bulk
auf Bestellung 2166 Stücke:
Lieferzeit 21-28 Tag (e)
164+4.39 EUR
Mindestbestellmenge: 164
FGH40N60SFD Fairchaild IGBT транзистор - [TO-247-3]; Uкэ.макс 600 V, 40 A Field Stop
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
1+21.15 EUR
10+ 19.04 EUR
FGH40N60SFDTU FGH40N60SFDTU onsemi fgh40n60sfdtu-f085-d.pdf Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
auf Bestellung 20 Stücke:
Lieferzeit 21-28 Tag (e)
2+13.03 EUR
Mindestbestellmenge: 2
FGH40N60SFTU FGH40N60SFTU Fairchild Semiconductor FAIR-S-A0002366253-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
auf Bestellung 13230 Stücke:
Lieferzeit 21-28 Tag (e)
122+5.95 EUR
Mindestbestellmenge: 122
FGH40N60SFTU FGH40N60SFTU onsemi fgh40n60sf-d.pdf Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
FGH40N60SMD-F085 FGH40N60SMD-F085 onsemi fgh40n60smd_f085-d.pdf Description: IGBT 600V 80A 349W TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/110ns
Switching Energy: 920µJ (on), 300µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 180 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 248 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.18 EUR
30+ 12.11 EUR
120+ 10.84 EUR
Mindestbestellmenge: 2
FGH40N60UFDTU FGH40N60UFDTU onsemi fgh40n60ufd-d.pdf Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 24ns/112ns
Switching Energy: 1.19mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
auf Bestellung 304 Stücke:
Lieferzeit 21-28 Tag (e)
3+11.21 EUR
30+ 8.88 EUR
120+ 7.61 EUR
Mindestbestellmenge: 3
FGI40N60SFTU FGI40N60SFTU Fairchild Semiconductor FAIRS28353-1.pdf?t.download=true&u=5oefqw Description: IGBT, 80A, 600V, N-CHANNEL
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-262 (I2PAK)
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
auf Bestellung 1800 Stücke:
Lieferzeit 21-28 Tag (e)
84+8.62 EUR
Mindestbestellmenge: 84
HGTG40N60A4 ON-Semicoductor hgtg40n60a4-d.pdf Trans IGBT Chip N-CH 600V 75A 625000mW 3-Pin(3+Tab) TO-247   HGTG40N60A4 THGTG40n60a4
Anzahl je Verpackung: 2 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
2+27.73 EUR
Mindestbestellmenge: 2
HGTG40N60C3 HGTG40N60C3 Harris Corporation FAIRS15573-1.pdf?t.download=true&u=5oefqw Description: 75A, 600V, N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 47ns/185ns
Switching Energy: 850mJ (on), 1mJ (off)
Test Condition: 480V, 40A, 3Ohm, 15V
Gate Charge: 395 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 291 W
auf Bestellung 89 Stücke:
Lieferzeit 21-28 Tag (e)
50+14.57 EUR
Mindestbestellmenge: 50
HGTG40N60C3R HGTG40N60C3R Harris Corporation HRISS535-1.pdf?t.download=true&u=5oefqw Description: 75A, 600V N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 291 W
auf Bestellung 45 Stücke:
Lieferzeit 21-28 Tag (e)
45+20.12 EUR
Mindestbestellmenge: 45
IGW40N60H3FKSA1 IGW40N60H3FKSA1 INFINEON TECHNOLOGIES IGW40N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 306W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IGW40N60H3FKSA1 Infineon IGW40N60H3_Rev2_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043293a15c401293a9970bb0008 IGBT 600V 80A 306W   IGW40N60H3FKSA1 TIGW40n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
5+12.81 EUR
Mindestbestellmenge: 5
IGW40N60H3FKSA1 IGW40N60H3FKSA1 Infineon Technologies infineon-igw40n60h3-ds-v02_03-en.pdf Trans IGBT Chip N-CH 600V 80A 306000mW 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)
IGW40N60H3FKSA1 IGW40N60H3FKSA1 Infineon Technologies IGW40N60H3_Rev2_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043293a15c401293a9970bb0008 Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/197ns
Switching Energy: 1.68mJ
Test Condition: 400V, 40A, 7.9Ohm, 15V
Gate Charge: 223 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 306 W
auf Bestellung 168 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.74 EUR
30+ 8.5 EUR
120+ 7.29 EUR
Mindestbestellmenge: 3
IGW40N60TPXKSA1 IGW40N60TPXKSA1 Infineon Technologies Infineon-IGW40N60TP-DS-v02_01-EN.pdf?fileId=5546d46269e1c019016a495a2ae24852 Description: IGBT TRENCH/FS 600V 67A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/222ns
Switching Energy: 1.06mJ (on), 610µJ (off)
Test Condition: 400V, 40A, 10.1Ohm, 15V
Gate Charge: 177 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 246 W
auf Bestellung 428 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.84 EUR
30+ 5.5 EUR
120+ 4.53 EUR
Mindestbestellmenge: 4
IHW40N60RFFKSA1 IHW40N60RFFKSA1 Infineon Technologies IHW40N60RF_ver2_3G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043271faefd01272867e39e4d58 Description: IGBT TRENCH 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/175ns
Switching Energy: 560µJ (off)
Test Condition: 400V, 40A, 5.6Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 305 W
auf Bestellung 639 Stücke:
Lieferzeit 21-28 Tag (e)
123+5.86 EUR
Mindestbestellmenge: 123
IHW40N60RFKSA1 IHW40N60RFKSA1 Infineon Technologies IHW40N60R_2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304316f66ee80117545f8f30066f Description: IGBT TRENCH 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/193ns
Switching Energy: 750µJ (off)
Test Condition: 400V, 40A, 5.6Ohm, 15V
Gate Charge: 223 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 305 W
auf Bestellung 544 Stücke:
Lieferzeit 21-28 Tag (e)
121+6 EUR
Mindestbestellmenge: 121
IKFW40N60DH3EXKSA1 IKFW40N60DH3EXKSA1 Infineon Technologies Infineon-IKFW40N60DH3E-DS-v02_01-EN.pdf?fileId=5546d462602a9dc8016034ff098b2df8 Description: IGBT TRENCH FS 600V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/144ns
Switching Energy: 870µJ (on), 360µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 111 W
auf Bestellung 220 Stücke:
Lieferzeit 21-28 Tag (e)
2+13.55 EUR
30+ 10.73 EUR
120+ 9.19 EUR
Mindestbestellmenge: 2
IKW40N60DTPXKSA1 IKW40N60DTPXKSA1 Infineon Technologies Infineon-IKW40N60DTP-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153cbc2c3c17cc3 Description: IGBT TRENCH FS 600V 67A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/222ns
Switching Energy: 1.06mJ (on), 610µJ (off)
Test Condition: 400V, 40A, 10.1Ohm, 15V
Gate Charge: 177 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 246 W
auf Bestellung 108 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.38 EUR
30+ 5.86 EUR
Mindestbestellmenge: 4
IKW40N60H3FKSA1 IKW40N60H3FKSA1 INFINEON TECHNOLOGIES IKW40N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 153W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 218ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.85 EUR
11+ 7.06 EUR
14+ 5.41 EUR
15+ 5.11 EUR
Mindestbestellmenge: 10
IKW40N60H3FKSA1 IKW40N60H3FKSA1 INFINEON TECHNOLOGIES IKW40N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 153W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 218ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.85 EUR
11+ 7.06 EUR
14+ 5.41 EUR
15+ 5.11 EUR
Mindestbestellmenge: 10
IKW40N60H3FKSA1 IKW40N60H3FKSA1 Infineon Technologies IKW40N60H3_Rev2_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043293a15c401293aacb8b8002d Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 124 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/197ns
Switching Energy: 1.68mJ
Test Condition: 400V, 40A, 7.9Ohm, 15V
Gate Charge: 223 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 306 W
auf Bestellung 1292 Stücke:
Lieferzeit 21-28 Tag (e)
3+12.64 EUR
30+ 10.02 EUR
120+ 8.59 EUR
510+ 7.63 EUR
1020+ 6.53 EUR
Mindestbestellmenge: 3
IRFPS40N60K Siliconix Transistor N-Channel MOSFET; 600V; 30V; 130mOhm; 40A; 570W; -55°C ~ 150°C; IRFPS40N60K TIRFPS40n60k
Anzahl je Verpackung: 2 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
2+18.32 EUR
Mindestbestellmenge: 2
MGY40N60 onsemi Description: IGBT 66A, 600V, N CHANNEL, TO 26
Packaging: Bulk
Part Status: Active
auf Bestellung 12095 Stücke:
Lieferzeit 21-28 Tag (e)
66+11 EUR
Mindestbestellmenge: 66
MGY40N60D onsemi mgy40n60d.rev1.pdf?t.download=true&u=ovmfp3 Description: TRANS IGBT CHIP N-CH 600V 66A 3P
Packaging: Bulk
Part Status: Active
auf Bestellung 1588 Stücke:
Lieferzeit 21-28 Tag (e)
62+11.74 EUR
Mindestbestellmenge: 62
NGTB40N60IHLWG NGTB40N60IHLWG onsemi NGTB40N60IHLWG.pdf Description: IGBT 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
auf Bestellung 452462 Stücke:
Lieferzeit 21-28 Tag (e)
123+5.86 EUR
Mindestbestellmenge: 123
NGTB40N60L2WG NGTB40N60L2WG onsemi ngtb40n60l2w-d.pdf Description: IGBT TRENCH/FS 600V 80A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 2.61V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 98ns/213ns
Switching Energy: 1.17mJ (on), 280µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 228 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 417 W
auf Bestellung 2092 Stücke:
Lieferzeit 21-28 Tag (e)
88+8.26 EUR
Mindestbestellmenge: 88
NVHL040N60S5F NVHL040N60S5F onsemi nvhl040n60s5f-d.pdf Description: SUPERFET5 FRFET, 40MOHM, TO-247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 29.5A, 10V
Power Dissipation (Max): 347W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 7.2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6318 pF @ 400 V
auf Bestellung 363 Stücke:
Lieferzeit 21-28 Tag (e)
2+24.52 EUR
10+ 21 EUR
Mindestbestellmenge: 2
SGH40N60UFDTU SGH40N60UFDTU onsemi SGH40N60UFD.pdf Description: IGBT 600V 40A 160W TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
auf Bestellung 195573 Stücke:
Lieferzeit 21-28 Tag (e)
129+5.59 EUR
Mindestbestellmenge: 129
SGH40N60UFTU SGH40N60UFTU Fairchild Semiconductor FAIRS45884-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
auf Bestellung 900 Stücke:
Lieferzeit 21-28 Tag (e)
80+9.1 EUR
Mindestbestellmenge: 80
SGH40N60UFTU SGH40N60UFTU onsemi sgh40n60uf-d.pdf Description: IGBT 600V 40A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
auf Bestellung 108626 Stücke:
Lieferzeit 21-28 Tag (e)
80+9.1 EUR
Mindestbestellmenge: 80
SGP40N60UFTU SGP40N60UFTU Fairchild Semiconductor FAIRS27228-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL IGBT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
auf Bestellung 51224 Stücke:
Lieferzeit 21-28 Tag (e)
80+9.08 EUR
Mindestbestellmenge: 80
SIHD240N60E-GE3 SIHD240N60E-GE3 Vishay Siliconix sihd240n60e.pdf Description: MOSFET N-CH 600V 12A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
auf Bestellung 3070 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.88 EUR
10+ 4.89 EUR
100+ 3.89 EUR
500+ 3.29 EUR
1000+ 2.79 EUR
3000+ 2.65 EUR
Mindestbestellmenge: 5
SIHFPS40N60K-GE3 SIHFPS40N60K-GE3 Vishay Siliconix sihfps40n60k.pdf Description: POWER MOSFET SUPER-247, 130 M @
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 24A, 10V
Power Dissipation (Max): 570W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7970 pF @ 25 V
auf Bestellung 218 Stücke:
Lieferzeit 21-28 Tag (e)
2+16.67 EUR
30+ 13.31 EUR
120+ 11.91 EUR
Mindestbestellmenge: 2
SIHG40N60E-GE3 SIHG40N60E-GE3 Vishay Siliconix sihg40n60e.pdf Description: MOSFET N-CH 600V 40A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4436 pF @ 100 V
auf Bestellung 809 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.89 EUR
25+ 12.69 EUR
100+ 11.36 EUR
500+ 10.02 EUR
Mindestbestellmenge: 2
SIHH240N60E-T1-GE3 SIHH240N60E-T1-GE3 Vishay Siliconix sihh240n60e.pdf Description: MOSFET N-CH 600V 12A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
auf Bestellung 2786 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.47 EUR
10+ 5.44 EUR
100+ 4.4 EUR
500+ 3.91 EUR
1000+ 3.35 EUR
Mindestbestellmenge: 5
SIHP240N60E-GE3 SIHP240N60E-GE3 Vishay Siliconix sihp240n60e.pdf Description: MOSFET N-CH 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 100 V
auf Bestellung 159 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.86 EUR
50+ 5.51 EUR
100+ 4.53 EUR
Mindestbestellmenge: 4
STB40N60M2 STB40N60M2 STMicroelectronics en.DM00089185.pdf Description: MOSFET N-CH 600V 34A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 2470 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.27 EUR
10+ 11.98 EUR
100+ 9.69 EUR
500+ 8.62 EUR
Mindestbestellmenge: 2
STB40N60M2 STB40N60M2 STMicroelectronics en.DM00089185.pdf Description: MOSFET N-CH 600V 34A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+7.38 EUR
Mindestbestellmenge: 1000
STF40N60M2 STF40N60M2 STMicroelectronics en.DM00116766.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 136A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.17 EUR
13+ 5.62 EUR
14+ 5.32 EUR
Mindestbestellmenge: 9
STF40N60M2 STF40N60M2 STMicroelectronics en.DM00116766.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 136A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.17 EUR
13+ 5.62 EUR
14+ 5.32 EUR
Mindestbestellmenge: 9
STF40N60M2 STF40N60M2 STMicroelectronics en.DM00116766.pdf Description: MOSFET N-CH 600V 34A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 1089 Stücke:
Lieferzeit 21-28 Tag (e)
2+13.96 EUR
50+ 11.08 EUR
100+ 9.49 EUR
500+ 8.44 EUR
1000+ 7.23 EUR
Mindestbestellmenge: 2
STP40N60M2 STP40N60M2 STMicroelectronics en.DM00089185.pdf Description: MOSFET N-CH 600V 34A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
3+12.84 EUR
50+ 10.18 EUR
100+ 8.73 EUR
500+ 7.76 EUR
1000+ 6.64 EUR
Mindestbestellmenge: 3
STW40N60M2 STW40N60M2 STMicroelectronics 1489dm00089185.pdf Trans MOSFET N-CH 600V 34A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
STW40N60M2 STW40N60M2 STMicroelectronics en.DM00089185.pdf Description: MOSFET N-CH 600V 34A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 586 Stücke:
Lieferzeit 21-28 Tag (e)
2+18.69 EUR
30+ 14.93 EUR
120+ 13.36 EUR
510+ 11.79 EUR
Mindestbestellmenge: 2
STWA40N60M2 STMicroelectronics stwa40n60m2.pdf Description: MOSFET N-CHANNEL 600V 34A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 600 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.18 EUR
10+ 12.74 EUR
100+ 10.3 EUR
600+ 9.16 EUR
Mindestbestellmenge: 2
FGAF40N60UFDTU ON Semiconductor FAIRS25147-1.pdf?t.download=true&u=5oefqw
auf Bestellung 10800 Stücke:
Lieferzeit 21-28 Tag (e)
FGAF40N60UFTU ON Semiconductor fgaf40n60uf-d.pdf FAIRS46118-1.pdf?t.download=true&u=5oefqw
auf Bestellung 5400 Stücke:
Lieferzeit 21-28 Tag (e)
FGH40N60SFD FAIRCHIL.. QFN16
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
FGH40N60SFD FAIRCHIL
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
G40N60 FAIRCHIL 10+ TO-3P
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
G40N60 FAIRCHIL 10+ TO220
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
FGH40N60SFD
Produktcode: 201597		 fgh40n60sfd.pdf
FGH40N60SFD
Hersteller: China
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600 V
Vce: 2,3 V
Ic 25: 80 A
Ic 100: 40 A
auf Bestellung 97 Stück:
Lieferzeit 21-28 Tag (e)
FGH40N60SFD (FGH40N60SFDTU)
Produktcode: 79400		 fgh40n60sfd.pdf
FGH40N60SFD (FGH40N60SFDTU)
Hersteller: FAIR
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600 V
Vce: 2,3 V
Ic 25: 80 A
Ic 100: 40 A
auf Bestellung 2 Stück:
Lieferzeit 21-28 Tag (e)
erwartet 300 Stück:
200 Stück - erwartet 20.05.2024
100 Stück - erwartet 12.05.2024
Anzahl Preis ohne MwSt
1+2.46 EUR
FGH40N60SMD
Produktcode: 63296		 fgh40n60smd-d.pdf
FGH40N60SMD
Hersteller: FAIR
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 2,1
Ic 25: 80
Ic 100: 40
Pd 25: 349
td(on)/td(off) 100-150 Grad: 01.12.1992
auf Bestellung 123 Stück:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+2.8 EUR
FGA40N60UFDTU FAIRS25258-1.pdf?t.download=true&u=5oefqw
FGA40N60UFDTU
Hersteller: Fairchild Semiconductor
Description: IGBT, 40A, 600V, N-CHANNEL
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
auf Bestellung 142 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
142+5.64 EUR
Mindestbestellmenge: 142
FGAF40N60SMD fgaf40n60smd-d.pdf
Hersteller: ON-Semicoductor
IGBT 600V 80A 115W   FGAF40N60SMD TFGAF40N60smd
Anzahl je Verpackung: 2 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+13.58 EUR
Mindestbestellmenge: 4
FGAF40N60UFDTU FAIRS25147-1.pdf?t.download=true&u=5oefqw
FGAF40N60UFDTU
Hersteller: Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 100 W
auf Bestellung 2512 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
122+5.95 EUR
Mindestbestellmenge: 122
FGAF40N60UFTU fgaf40n60uf-d.pdf
FGAF40N60UFTU
Hersteller: onsemi
Description: IGBT 600V 40A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 100 W
auf Bestellung 81 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.14 EUR
30+ 6.44 EUR
Mindestbestellmenge: 4
FGAF40N60UFTU FAIRS46118-1.pdf?t.download=true&u=5oefqw
FGAF40N60UFTU
Hersteller: Fairchild Semiconductor
Description: IGBT
Packaging: Bulk
auf Bestellung 2166 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
164+4.39 EUR
Mindestbestellmenge: 164
FGH40N60SFD
Hersteller: Fairchaild
IGBT транзистор - [TO-247-3]; Uкэ.макс 600 V, 40 A Field Stop
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+21.15 EUR
10+ 19.04 EUR
FGH40N60SFDTU fgh40n60sfdtu-f085-d.pdf
FGH40N60SFDTU
Hersteller: onsemi
Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
auf Bestellung 20 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+13.03 EUR
Mindestbestellmenge: 2
FGH40N60SFTU FAIR-S-A0002366253-1.pdf?t.download=true&u=5oefqw
FGH40N60SFTU
Hersteller: Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
auf Bestellung 13230 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
122+5.95 EUR
Mindestbestellmenge: 122
FGH40N60SFTU fgh40n60sf-d.pdf
FGH40N60SFTU
Hersteller: onsemi
Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
FGH40N60SMD-F085 fgh40n60smd_f085-d.pdf
FGH40N60SMD-F085
Hersteller: onsemi
Description: IGBT 600V 80A 349W TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/110ns
Switching Energy: 920µJ (on), 300µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 180 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 248 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+15.18 EUR
30+ 12.11 EUR
120+ 10.84 EUR
Mindestbestellmenge: 2
FGH40N60UFDTU fgh40n60ufd-d.pdf
FGH40N60UFDTU
Hersteller: onsemi
Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 24ns/112ns
Switching Energy: 1.19mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
auf Bestellung 304 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+11.21 EUR
30+ 8.88 EUR
120+ 7.61 EUR
Mindestbestellmenge: 3
FGI40N60SFTU FAIRS28353-1.pdf?t.download=true&u=5oefqw
FGI40N60SFTU
Hersteller: Fairchild Semiconductor
Description: IGBT, 80A, 600V, N-CHANNEL
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-262 (I2PAK)
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
auf Bestellung 1800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
84+8.62 EUR
Mindestbestellmenge: 84
HGTG40N60A4 hgtg40n60a4-d.pdf
Hersteller: ON-Semicoductor
Trans IGBT Chip N-CH 600V 75A 625000mW 3-Pin(3+Tab) TO-247   HGTG40N60A4 THGTG40n60a4
Anzahl je Verpackung: 2 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
2+27.73 EUR
Mindestbestellmenge: 2
HGTG40N60C3 FAIRS15573-1.pdf?t.download=true&u=5oefqw
HGTG40N60C3
Hersteller: Harris Corporation
Description: 75A, 600V, N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 47ns/185ns
Switching Energy: 850mJ (on), 1mJ (off)
Test Condition: 480V, 40A, 3Ohm, 15V
Gate Charge: 395 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 291 W
auf Bestellung 89 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
50+14.57 EUR
Mindestbestellmenge: 50
HGTG40N60C3R HRISS535-1.pdf?t.download=true&u=5oefqw
HGTG40N60C3R
Hersteller: Harris Corporation
Description: 75A, 600V N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 291 W
auf Bestellung 45 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
45+20.12 EUR
Mindestbestellmenge: 45
IGW40N60H3FKSA1 IGW40N60H3-DTE.pdf
IGW40N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 306W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IGW40N60H3FKSA1 IGW40N60H3_Rev2_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043293a15c401293a9970bb0008
Hersteller: Infineon
IGBT 600V 80A 306W   IGW40N60H3FKSA1 TIGW40n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+12.81 EUR
Mindestbestellmenge: 5
IGW40N60H3FKSA1 infineon-igw40n60h3-ds-v02_03-en.pdf
IGW40N60H3FKSA1
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 80A 306000mW 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)
IGW40N60H3FKSA1 IGW40N60H3_Rev2_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043293a15c401293a9970bb0008
IGW40N60H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/197ns
Switching Energy: 1.68mJ
Test Condition: 400V, 40A, 7.9Ohm, 15V
Gate Charge: 223 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 306 W
auf Bestellung 168 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+10.74 EUR
30+ 8.5 EUR
120+ 7.29 EUR
Mindestbestellmenge: 3
IGW40N60TPXKSA1 Infineon-IGW40N60TP-DS-v02_01-EN.pdf?fileId=5546d46269e1c019016a495a2ae24852
IGW40N60TPXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH/FS 600V 67A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/222ns
Switching Energy: 1.06mJ (on), 610µJ (off)
Test Condition: 400V, 40A, 10.1Ohm, 15V
Gate Charge: 177 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 246 W
auf Bestellung 428 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.84 EUR
30+ 5.5 EUR
120+ 4.53 EUR
Mindestbestellmenge: 4
IHW40N60RFFKSA1 IHW40N60RF_ver2_3G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043271faefd01272867e39e4d58
IHW40N60RFFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/175ns
Switching Energy: 560µJ (off)
Test Condition: 400V, 40A, 5.6Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 305 W
auf Bestellung 639 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
123+5.86 EUR
Mindestbestellmenge: 123
IHW40N60RFKSA1 IHW40N60R_2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304316f66ee80117545f8f30066f
IHW40N60RFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/193ns
Switching Energy: 750µJ (off)
Test Condition: 400V, 40A, 5.6Ohm, 15V
Gate Charge: 223 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 305 W
auf Bestellung 544 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
121+6 EUR
Mindestbestellmenge: 121
IKFW40N60DH3EXKSA1 Infineon-IKFW40N60DH3E-DS-v02_01-EN.pdf?fileId=5546d462602a9dc8016034ff098b2df8
IKFW40N60DH3EXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/144ns
Switching Energy: 870µJ (on), 360µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 111 W
auf Bestellung 220 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+13.55 EUR
30+ 10.73 EUR
120+ 9.19 EUR
Mindestbestellmenge: 2
IKW40N60DTPXKSA1 Infineon-IKW40N60DTP-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153cbc2c3c17cc3
IKW40N60DTPXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 67A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/222ns
Switching Energy: 1.06mJ (on), 610µJ (off)
Test Condition: 400V, 40A, 10.1Ohm, 15V
Gate Charge: 177 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 246 W
auf Bestellung 108 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.38 EUR
30+ 5.86 EUR
Mindestbestellmenge: 4
IKW40N60H3FKSA1 IKW40N60H3.pdf
IKW40N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 153W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 218ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10+7.85 EUR
11+ 7.06 EUR
14+ 5.41 EUR
15+ 5.11 EUR
Mindestbestellmenge: 10
IKW40N60H3FKSA1 IKW40N60H3.pdf
IKW40N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 153W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 218ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+7.85 EUR
11+ 7.06 EUR
14+ 5.41 EUR
15+ 5.11 EUR
Mindestbestellmenge: 10
IKW40N60H3FKSA1 IKW40N60H3_Rev2_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043293a15c401293aacb8b8002d
IKW40N60H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 124 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/197ns
Switching Energy: 1.68mJ
Test Condition: 400V, 40A, 7.9Ohm, 15V
Gate Charge: 223 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 306 W
auf Bestellung 1292 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+12.64 EUR
30+ 10.02 EUR
120+ 8.59 EUR
510+ 7.63 EUR
1020+ 6.53 EUR
Mindestbestellmenge: 3
IRFPS40N60K
Hersteller: Siliconix
Transistor N-Channel MOSFET; 600V; 30V; 130mOhm; 40A; 570W; -55°C ~ 150°C; IRFPS40N60K TIRFPS40n60k
Anzahl je Verpackung: 2 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
2+18.32 EUR
Mindestbestellmenge: 2
MGY40N60
Hersteller: onsemi
Description: IGBT 66A, 600V, N CHANNEL, TO 26
Packaging: Bulk
Part Status: Active
auf Bestellung 12095 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
66+11 EUR
Mindestbestellmenge: 66
MGY40N60D mgy40n60d.rev1.pdf?t.download=true&u=ovmfp3
Hersteller: onsemi
Description: TRANS IGBT CHIP N-CH 600V 66A 3P
Packaging: Bulk
Part Status: Active
auf Bestellung 1588 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
62+11.74 EUR
Mindestbestellmenge: 62
NGTB40N60IHLWG NGTB40N60IHLWG.pdf
NGTB40N60IHLWG
Hersteller: onsemi
Description: IGBT 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
auf Bestellung 452462 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
123+5.86 EUR
Mindestbestellmenge: 123
NGTB40N60L2WG ngtb40n60l2w-d.pdf
NGTB40N60L2WG
Hersteller: onsemi
Description: IGBT TRENCH/FS 600V 80A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 2.61V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 98ns/213ns
Switching Energy: 1.17mJ (on), 280µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 228 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 417 W
auf Bestellung 2092 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
88+8.26 EUR
Mindestbestellmenge: 88
NVHL040N60S5F nvhl040n60s5f-d.pdf
NVHL040N60S5F
Hersteller: onsemi
Description: SUPERFET5 FRFET, 40MOHM, TO-247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 29.5A, 10V
Power Dissipation (Max): 347W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 7.2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6318 pF @ 400 V
auf Bestellung 363 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+24.52 EUR
10+ 21 EUR
Mindestbestellmenge: 2
SGH40N60UFDTU SGH40N60UFD.pdf
SGH40N60UFDTU
Hersteller: onsemi
Description: IGBT 600V 40A 160W TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
auf Bestellung 195573 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
129+5.59 EUR
Mindestbestellmenge: 129
SGH40N60UFTU FAIRS45884-1.pdf?t.download=true&u=5oefqw
SGH40N60UFTU
Hersteller: Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
auf Bestellung 900 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
80+9.1 EUR
Mindestbestellmenge: 80
SGH40N60UFTU sgh40n60uf-d.pdf
SGH40N60UFTU
Hersteller: onsemi
Description: IGBT 600V 40A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
auf Bestellung 108626 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
80+9.1 EUR
Mindestbestellmenge: 80
SGP40N60UFTU FAIRS27228-1.pdf?t.download=true&u=5oefqw
SGP40N60UFTU
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL IGBT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
auf Bestellung 51224 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
80+9.08 EUR
Mindestbestellmenge: 80
SIHD240N60E-GE3 sihd240n60e.pdf
SIHD240N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
auf Bestellung 3070 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.88 EUR
10+ 4.89 EUR
100+ 3.89 EUR
500+ 3.29 EUR
1000+ 2.79 EUR
3000+ 2.65 EUR
Mindestbestellmenge: 5
SIHFPS40N60K-GE3 sihfps40n60k.pdf
SIHFPS40N60K-GE3
Hersteller: Vishay Siliconix
Description: POWER MOSFET SUPER-247, 130 M @
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 24A, 10V
Power Dissipation (Max): 570W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7970 pF @ 25 V
auf Bestellung 218 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+16.67 EUR
30+ 13.31 EUR
120+ 11.91 EUR
Mindestbestellmenge: 2
SIHG40N60E-GE3 sihg40n60e.pdf
SIHG40N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 40A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4436 pF @ 100 V
auf Bestellung 809 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+15.89 EUR
25+ 12.69 EUR
100+ 11.36 EUR
500+ 10.02 EUR
Mindestbestellmenge: 2
SIHH240N60E-T1-GE3 sihh240n60e.pdf
SIHH240N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
auf Bestellung 2786 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.47 EUR
10+ 5.44 EUR
100+ 4.4 EUR
500+ 3.91 EUR
1000+ 3.35 EUR
Mindestbestellmenge: 5
SIHP240N60E-GE3 sihp240n60e.pdf
SIHP240N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 100 V
auf Bestellung 159 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.86 EUR
50+ 5.51 EUR
100+ 4.53 EUR
Mindestbestellmenge: 4
STB40N60M2 en.DM00089185.pdf
STB40N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 2470 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+14.27 EUR
10+ 11.98 EUR
100+ 9.69 EUR
500+ 8.62 EUR
Mindestbestellmenge: 2
STB40N60M2 en.DM00089185.pdf
STB40N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+7.38 EUR
Mindestbestellmenge: 1000
STF40N60M2 en.DM00116766.pdf
STF40N60M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 136A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
9+8.17 EUR
13+ 5.62 EUR
14+ 5.32 EUR
Mindestbestellmenge: 9
STF40N60M2 en.DM00116766.pdf
STF40N60M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 136A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
9+8.17 EUR
13+ 5.62 EUR
14+ 5.32 EUR
Mindestbestellmenge: 9
STF40N60M2 en.DM00116766.pdf
STF40N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 1089 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+13.96 EUR
50+ 11.08 EUR
100+ 9.49 EUR
500+ 8.44 EUR
1000+ 7.23 EUR
Mindestbestellmenge: 2
STP40N60M2 en.DM00089185.pdf
STP40N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+12.84 EUR
50+ 10.18 EUR
100+ 8.73 EUR
500+ 7.76 EUR
1000+ 6.64 EUR
Mindestbestellmenge: 3
STW40N60M2 1489dm00089185.pdf
STW40N60M2
Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 34A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
STW40N60M2 en.DM00089185.pdf
STW40N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 586 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+18.69 EUR
30+ 14.93 EUR
120+ 13.36 EUR
510+ 11.79 EUR
Mindestbestellmenge: 2
STWA40N60M2 stwa40n60m2.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CHANNEL 600V 34A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 600 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+15.18 EUR
10+ 12.74 EUR
100+ 10.3 EUR
600+ 9.16 EUR
Mindestbestellmenge: 2
FGAF40N60UFDTU FAIRS25147-1.pdf?t.download=true&u=5oefqw
Hersteller: ON Semiconductor
auf Bestellung 10800 Stücke:
Lieferzeit 21-28 Tag (e)
FGAF40N60UFTU fgaf40n60uf-d.pdf FAIRS46118-1.pdf?t.download=true&u=5oefqw
Hersteller: ON Semiconductor
auf Bestellung 5400 Stücke:
Lieferzeit 21-28 Tag (e)
FGH40N60SFD
Hersteller: FAIRCHIL..
QFN16
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
FGH40N60SFD
Hersteller: FAIRCHIL
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
G40N60
Hersteller: FAIRCHIL
10+ TO-3P
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
G40N60
Hersteller: FAIRCHIL
10+ TO220
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
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