Produkte > B2D
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| B2D-211213 | OTTO | Basic / Snap Action Switches REDUCED DEAD BREAK, .2 WIDE,BTN,SGL SLDR | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2D-212211 | OTTO | Basic / Snap Action Switches Sub-Subminiature Basic Switch | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2D-213213 | OTTO | Basic / Snap Action Switches B2, LOW DEADBREAK, .2 WIDE,BTN, QC TERM | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2D02120E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: TO252-2 Max. forward voltage: 1.92V Max. forward impulse current: 22A Leakage current: 20µA Power dissipation: 34W Kind of package: reel; tape | auf Bestellung 3358 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D02120E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: TO252-2 Max. forward voltage: 1.92V Max. forward impulse current: 22A Leakage current: 20µA Power dissipation: 34W Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke | auf Bestellung 3358 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D02120K1 | BASiC SEMICONDUCTOR | B2D02120K1 THT Schottky diodes | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2D04065D | BASiC SEMICONDUCTOR | B2D04065D SMD Schottky diodes | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2D04065D1 | BASiC SEMICONDUCTOR | B2D04065D1 SMD Schottky diodes | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2D04065E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO252-2 Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke | auf Bestellung 2453 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D04065E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO252-2 Kind of package: reel; tape | auf Bestellung 2453 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D04065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.6V Max. forward impulse current: 34A Leakage current: 20µA Power dissipation: 39W Kind of package: tube | auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D04065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.6V Max. forward impulse current: 34A Leakage current: 20µA Power dissipation: 39W Kind of package: tube Anzahl je Verpackung: 1 Stücke | auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D04065KF1 | BASiC SEMICONDUCTOR | B2D04065KF1 THT Schottky diodes | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2D04065V | BASiC SEMICONDUCTOR | B2D04065V SMD Schottky diodes | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2D04065V1 | BASiC SEMICONDUCTOR | B2D04065V1 SMD Schottky diodes | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2D05120E1 | BASiC SEMICONDUCTOR | B2D05120E1 SMD Schottky diodes | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2D05120K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 55A Leakage current: 30µA Power dissipation: 64W Kind of package: tube Anzahl je Verpackung: 1 Stücke | auf Bestellung 136 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D05120K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 55A Leakage current: 30µA Power dissipation: 64W Kind of package: tube | auf Bestellung 136 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D06065E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO252-2 Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke | auf Bestellung 2452 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D06065E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO252-2 Kind of package: reel; tape | auf Bestellung 2452 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D06065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D06065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Anzahl je Verpackung: 1 Stücke | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D06065KF1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Anzahl je Verpackung: 1 Stücke | auf Bestellung 162 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D06065KF1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube | auf Bestellung 162 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D06065KS | BASiC SEMICONDUCTOR | B2D06065KS THT Schottky diodes | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2D06065Q | BASiC SEMICONDUCTOR | B2D06065Q SMD Schottky diodes | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2D08065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 57W Anzahl je Verpackung: 1 Stücke | auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D08065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 57W | auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D08065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Anzahl je Verpackung: 1 Stücke | auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D08065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube | auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D08065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.54V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 37W Anzahl je Verpackung: 1 Stücke | auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D08065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.54V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 37W | auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D10065E1 | BASiC SEMICONDUCTOR | B2D10065E1 SMD Schottky diodes | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2D10065F | BASiC SEMICONDUCTOR | B2D10065F SMD Schottky diodes | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2D10065F1 | BASiC SEMICONDUCTOR | B2D10065F1 SMD Schottky diodes | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2D10065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 85A Leakage current: 20µA Power dissipation: 62W Kind of package: tube | auf Bestellung 215 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D10065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 85A Leakage current: 20µA Power dissipation: 62W Kind of package: tube Anzahl je Verpackung: 1 Stücke | auf Bestellung 215 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D10065KF1 | BASiC SEMICONDUCTOR | B2D10065KF1 THT Schottky diodes | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2D10065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.7V Max. forward impulse current: 85A Leakage current: 10µA Kind of package: tube Power dissipation: 47W | auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D10065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.7V Max. forward impulse current: 85A Leakage current: 10µA Kind of package: tube Power dissipation: 47W Anzahl je Verpackung: 1 Stücke | auf Bestellung 67 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D10065Q | BASiC SEMICONDUCTOR | B2D10065Q SMD Schottky diodes | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2D10120E1 | BASiC SEMICONDUCTOR | B2D10120E1 SMD Schottky diodes | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2D10120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2V Max. forward impulse current: 90A Leakage current: 30µA Power dissipation: 62W Kind of package: tube | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D10120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2V Max. forward impulse current: 90A Leakage current: 30µA Power dissipation: 62W Kind of package: tube Anzahl je Verpackung: 1 Stücke | auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D10120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. forward impulse current: 55A Leakage current: 20µA Power dissipation: 64W Kind of package: tube Max. load current: 10A Anzahl je Verpackung: 1 Stücke | auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D10120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. forward impulse current: 55A Leakage current: 20µA Power dissipation: 64W Kind of package: tube Max. load current: 10A | auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D10120K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 2V Max. forward impulse current: 90A Leakage current: 30µA Power dissipation: 80W Kind of package: tube | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D10120K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 2V Max. forward impulse current: 90A Leakage current: 30µA Power dissipation: 80W Kind of package: tube Anzahl je Verpackung: 1 Stücke | auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D15120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube | auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D15120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Anzahl je Verpackung: 1 Stücke | auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D16065HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. load current: 16A Anzahl je Verpackung: 1 Stücke | auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D16065HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. load current: 16A | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D16120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.82V Max. forward impulse current: 80A Leakage current: 30µA Power dissipation: 74W Kind of package: tube Max. load current: 16A | auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D16120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.82V Max. forward impulse current: 80A Leakage current: 30µA Power dissipation: 74W Kind of package: tube Max. load current: 16A Anzahl je Verpackung: 1 Stücke | auf Bestellung 38 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D20065F1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape Mounting: SMD Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Case: TO263-2 Anzahl je Verpackung: 1 Stücke | auf Bestellung 520 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D20065F1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape Mounting: SMD Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Case: TO263-2 | auf Bestellung 520 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D20065H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA Mounting: THT Max. off-state voltage: 650V Max. forward voltage: 1.7V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 146A Leakage current: 15µA Power dissipation: 130W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-2 | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D20065H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA Mounting: THT Max. off-state voltage: 650V Max. forward voltage: 1.7V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 146A Leakage current: 15µA Power dissipation: 130W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-2 Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D20065HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA Mounting: THT Max. off-state voltage: 650V Max. load current: 20A Max. forward voltage: 1.75V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 70A Leakage current: 30µA Power dissipation: 74W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 | auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D20065HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA Mounting: THT Max. off-state voltage: 650V Max. load current: 20A Max. forward voltage: 1.75V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 70A Leakage current: 30µA Power dissipation: 74W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Anzahl je Verpackung: 1 Stücke | auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D20065K1 | BASiC SEMICONDUCTOR | B2D20065K1 THT Schottky diodes | auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D20065TF | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA Mounting: THT Max. off-state voltage: 650V Max. load current: 20A Max. forward voltage: 1.62V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 70A Leakage current: 20µA Power dissipation: 33W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO3PF | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D20065TF | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA Mounting: THT Max. off-state voltage: 650V Max. load current: 20A Max. forward voltage: 1.62V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 70A Leakage current: 20µA Power dissipation: 33W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO3PF Anzahl je Verpackung: 1 Stücke | auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D20120F1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.8V Max. forward impulse current: 180A Kind of package: reel; tape Power dissipation: 122W Leakage current: 33µA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2D20120F1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.8V Max. forward impulse current: 180A Kind of package: reel; tape Power dissipation: 122W Leakage current: 33µA Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| B2D20120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.78V Max. forward impulse current: 190A Leakage current: 40µA Power dissipation: 159W Kind of package: tube | auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D20120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.78V Max. forward impulse current: 190A Leakage current: 40µA Power dissipation: 159W Kind of package: tube Anzahl je Verpackung: 1 Stücke | auf Bestellung 38 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D20120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 2V Max. forward impulse current: 90A Kind of package: tube Power dissipation: 60W Max. load current: 20A Leakage current: 40µA | auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D20120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 2V Max. forward impulse current: 90A Kind of package: tube Power dissipation: 60W Max. load current: 20A Leakage current: 40µA Anzahl je Verpackung: 1 Stücke | auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D30065H1 | BASiC SEMICONDUCTOR | B2D30065H1 THT Schottky diodes | auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D30065HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. load current: 30A Anzahl je Verpackung: 1 Stücke | auf Bestellung 44 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D30065HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. load current: 30A | auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D30120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Anzahl je Verpackung: 1 Stücke | auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D30120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube | auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D30120HC1 | BASiC SEMICONDUCTOR | B2D30120HC1 THT Schottky diodes | auf Bestellung 46 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D40065H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; tube Case: TO247-2 Mounting: THT Max. off-state voltage: 650V Load current: 40A Semiconductor structure: single diode Kind of package: tube Type of diode: Schottky rectifying Technology: SiC | auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D40065H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; tube Case: TO247-2 Mounting: THT Max. off-state voltage: 650V Load current: 40A Semiconductor structure: single diode Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Anzahl je Verpackung: 1 Stücke | auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D40065HC1 | BASiC SEMICONDUCTOR | B2D40065HC1 THT Schottky diodes | auf Bestellung 47 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D40120H1 | BASiC SEMICONDUCTOR | B2D40120H1 THT Schottky diodes | auf Bestellung 38 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D40120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 112W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.92V Max. forward impulse current: 180A Leakage current: 30µA Power dissipation: 112W Kind of package: tube Max. load current: 40A Anzahl je Verpackung: 1 Stücke | auf Bestellung 77 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| B2D40120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 112W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.92V Max. forward impulse current: 180A Leakage current: 30µA Power dissipation: 112W Kind of package: tube Max. load current: 40A | auf Bestellung 77 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D60120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2.1V Max. forward impulse current: 340A Leakage current: 70µA Power dissipation: 361W Kind of package: tube | auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| B2D60120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2.1V Max. forward impulse current: 340A Leakage current: 70µA Power dissipation: 361W Kind of package: tube Anzahl je Verpackung: 1 Stücke | auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
|