Produkte > B2D
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||
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| B2D-211113 | OTTO | Basic / Snap Action Switches Subminiature Basic Switch | auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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| B2D-211213 | OTTO | Basic / Snap Action Switches REDUCED DEAD BREAK, .2 WIDE,BTN,SGL SLDR | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| B2D-212211 | OTTO | Basic / Snap Action Switches Sub-Subminiature Basic Switch | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| B2D-213213 | OTTO | Basic / Snap Action Switches B2, LOW DEADBREAK, .2 WIDE,BTN, QC TERM | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| B2D-215111 | OTTO | Basic / Snap Action Switches Subminiature Basic Switch | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| B2D02120E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape Case: TO252-2 Mounting: SMD Kind of package: reel; tape Leakage current: 20µA Max. forward voltage: 1.92V Load current: 2A Max. forward impulse current: 22A Power dissipation: 34W Max. off-state voltage: 1.2kV Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 3267 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D04065E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape Case: TO252-2 Mounting: SMD Kind of package: reel; tape Leakage current: 20µA Max. forward voltage: 1.6V Load current: 4A Max. forward impulse current: 31A Power dissipation: 39W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 2451 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D04065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V Case: TO220-2 Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.6V Load current: 4A Max. forward impulse current: 34A Power dissipation: 39W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D06065E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape Case: TO252-2 Mounting: SMD Kind of package: reel; tape Leakage current: 20µA Max. forward voltage: 1.7V Load current: 6A Max. forward impulse current: 38A Power dissipation: 50W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 2434 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D06065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V Case: TO220-2 Mounting: THT Kind of package: tube Leakage current: 11µA Max. forward voltage: 1.7V Load current: 6A Max. forward impulse current: 48A Power dissipation: 58W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D08065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 57W | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D08065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1V Case: TO220-2 Mounting: THT Kind of package: tube Leakage current: 11µA Max. forward voltage: 1V Load current: 8A Max. forward impulse current: 56A Power dissipation: 64W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D08065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.54V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 37W | auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D10065E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO252-2 Max. forward voltage: 1.55V Max. forward impulse current: 65A Leakage current: 20µA Kind of package: reel; tape Power dissipation: 52W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| B2D10065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA Case: TO220-2 Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.7V Load current: 10A Max. forward impulse current: 85A Power dissipation: 62W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D10065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA Case: TO220ISO Mounting: THT Kind of package: tube Leakage current: 10µA Max. forward voltage: 1.7V Load current: 10A Max. forward impulse current: 85A Power dissipation: 47W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D10120E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 72W Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.95V Leakage current: 16µA Max. forward impulse current: 95A Kind of package: reel; tape Power dissipation: 72W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| B2D10120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V Case: TO247-2 Mounting: THT Kind of package: tube Leakage current: 30µA Max. forward voltage: 2V Load current: 10A Max. forward impulse current: 90A Power dissipation: 62W Max. off-state voltage: 1.2kV Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D10120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA Case: TO247-3 Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.8V Load current: 5A x2 Max. load current: 10A Max. forward impulse current: 55A Power dissipation: 64W Max. off-state voltage: 1.2kV Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D15120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; Ir: 60uA Case: TO247-2 Mounting: THT Kind of package: tube Leakage current: 60µA Max. forward voltage: 1.9V Load current: 15A Max. forward impulse current: 135A Power dissipation: 123W Max. off-state voltage: 1.2kV Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D16120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA Semiconductor structure: common cathode; double Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Leakage current: 30µA Max. forward voltage: 1.82V Load current: 8A x2 Max. load current: 16A Power dissipation: 74W Max. forward impulse current: 80A Max. off-state voltage: 1.2kV | auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D20065F1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape Case: TO263-2 Mounting: SMD Kind of package: reel; tape Leakage current: 13µA Max. forward voltage: 1.67V Load current: 20A Max. forward impulse current: 140A Power dissipation: 100W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 387 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D20065H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA Case: TO247-2 Mounting: THT Kind of package: tube Leakage current: 15µA Max. forward voltage: 1.7V Load current: 20A Max. forward impulse current: 146A Power dissipation: 130W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D20065TF | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA Case: TO3PF Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.62V Load current: 10A x2 Max. load current: 20A Max. forward impulse current: 70A Power dissipation: 33W Max. off-state voltage: 650V Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D20120F1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.8V Max. forward impulse current: 180A Kind of package: reel; tape Leakage current: 33µA Power dissipation: 122W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| B2D20120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA Case: TO247-2 Mounting: THT Kind of package: tube Leakage current: 40µA Max. forward voltage: 1.78V Load current: 20A Max. forward impulse current: 190A Power dissipation: 159W Max. off-state voltage: 1.2kV Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D20120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W Case: TO247-3 Mounting: THT Kind of package: tube Leakage current: 40µA Max. forward voltage: 2V Load current: 10A x2 Max. load current: 20A Max. forward impulse current: 90A Power dissipation: 60W Max. off-state voltage: 1.2kV Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D30065H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; Ir: 15uA Case: TO247-2 Mounting: THT Kind of package: tube Leakage current: 15µA Max. forward voltage: 1.82V Load current: 30A Max. forward impulse current: 200A Power dissipation: 216W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D30065HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube Case: TO247-3 Mounting: THT Kind of package: tube Load current: 15A x2 Max. load current: 30A Max. off-state voltage: 650V Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D30120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; 95W Case: TO247-3 Mounting: THT Kind of package: tube Leakage current: 40µA Max. forward voltage: 1.75V Load current: 15A x2 Max. load current: 30A Max. forward impulse current: 135A Power dissipation: 95W Max. off-state voltage: 1.2kV Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D40065H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 26uA Case: TO247-2 Mounting: THT Kind of package: tube Leakage current: 26µA Max. forward voltage: 1.76V Load current: 40A Max. forward impulse current: 180A Power dissipation: 240W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D40120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 112W Case: TO247-3 Mounting: THT Kind of package: tube Leakage current: 30µA Max. forward voltage: 1.92V Load current: 20A x2 Max. load current: 40A Max. forward impulse current: 180A Power dissipation: 112W Max. off-state voltage: 1.2kV Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 76 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D60120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA Case: TO247-2 Mounting: THT Kind of package: tube Leakage current: 70µA Max. forward voltage: 2.1V Load current: 60A Max. forward impulse current: 340A Power dissipation: 361W Max. off-state voltage: 1.2kV Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying | auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2DM100120N1 | BASiC SEMICONDUCTOR | Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227; screw Case: SOT227 Kind of package: tube Type of semiconductor module: diode Semiconductor structure: double independent Features of semiconductor devices: Schottky Electrical mounting: screw Mechanical mounting: screw Max. forward impulse current: 540A Load current: 100A x2 Max. load current: 200A Max. off-state voltage: 1.2kV Technology: SiC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH |