Produkte > B2D
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||
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| B2D-211213 | OTTO | Basic / Snap Action Switches REDUCED DEAD BREAK, .2 WIDE,BTN,SGL SLDR | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| B2D-212211 | OTTO | Basic / Snap Action Switches Sub-Subminiature Basic Switch | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| B2D-213213 | OTTO | Basic / Snap Action Switches B2, LOW DEADBREAK, .2 WIDE,BTN, QC TERM | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| B2D02120E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.92V Leakage current: 20µA Max. forward impulse current: 22A Kind of package: reel; tape Technology: SiC Power dissipation: 34W | auf Bestellung 3339 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D02120E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.92V Leakage current: 20µA Max. forward impulse current: 22A Kind of package: reel; tape Technology: SiC Power dissipation: 34W Anzahl je Verpackung: 1 Stücke | auf Bestellung 3339 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D02120K1 | BASiC SEMICONDUCTOR | B2D02120K1 THT Schottky diodes | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D04065D | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Case: DFN5x6 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 1.7V Leakage current: 10µA Max. forward impulse current: 32A Kind of package: reel; tape Power dissipation: 26W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| B2D04065E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Mounting: SMD Load current: 4A Max. off-state voltage: 650V Case: TO252-2 | auf Bestellung 2451 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D04065E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Mounting: SMD Load current: 4A Max. off-state voltage: 650V Case: TO252-2 Anzahl je Verpackung: 1 Stücke | auf Bestellung 2451 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D04065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Mounting: THT Leakage current: 20µA Max. forward voltage: 1.6V Load current: 4A Power dissipation: 39W Max. forward impulse current: 34A Max. off-state voltage: 650V Case: TO220-2 Anzahl je Verpackung: 1 Stücke | auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D04065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Mounting: THT Leakage current: 20µA Max. forward voltage: 1.6V Load current: 4A Power dissipation: 39W Max. forward impulse current: 34A Max. off-state voltage: 650V Case: TO220-2 | auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D05120E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Kind of package: reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| B2D05120K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA Case: TO220-2 Mounting: THT Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Kind of package: tube Leakage current: 30µA Max. forward voltage: 1.75V Load current: 5A Max. forward impulse current: 55A Power dissipation: 64W Max. off-state voltage: 1.2kV | auf Bestellung 121 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D05120K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA Case: TO220-2 Mounting: THT Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Kind of package: tube Leakage current: 30µA Max. forward voltage: 1.75V Load current: 5A Max. forward impulse current: 55A Power dissipation: 64W Max. off-state voltage: 1.2kV Anzahl je Verpackung: 1 Stücke | auf Bestellung 121 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D06065E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO252-2 Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke | auf Bestellung 2445 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D06065E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO252-2 Kind of package: reel; tape | auf Bestellung 2445 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D06065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D06065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Anzahl je Verpackung: 1 Stücke | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D06065KF1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Anzahl je Verpackung: 1 Stücke | auf Bestellung 153 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D06065KF1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube | auf Bestellung 153 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D08065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 57W Anzahl je Verpackung: 1 Stücke | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D08065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 57W | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D08065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube | auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D08065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Anzahl je Verpackung: 1 Stücke | auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D08065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.54V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 37W Anzahl je Verpackung: 1 Stücke | auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D08065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.54V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 37W | auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D10065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 85A Leakage current: 20µA Kind of package: tube Power dissipation: 62W | auf Bestellung 222 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D10065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 85A Leakage current: 20µA Kind of package: tube Power dissipation: 62W Anzahl je Verpackung: 1 Stücke | auf Bestellung 222 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D10065KF1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| B2D10065KS | BASiC SEMICONDUCTOR | B2D10065KS THT Schottky diodes | auf Bestellung 63 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D10065Q | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN8x8; SiC; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: DFN8x8 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.67V Leakage current: 20µA Max. forward impulse current: 70A Kind of package: reel; tape Power dissipation: 54W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| B2D10120E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Kind of package: reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| B2D10120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2V Max. forward impulse current: 90A Leakage current: 30µA Kind of package: tube Power dissipation: 62W Anzahl je Verpackung: 1 Stücke | auf Bestellung 39 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D10120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2V Max. forward impulse current: 90A Leakage current: 30µA Kind of package: tube Power dissipation: 62W | auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D10120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. forward impulse current: 55A Leakage current: 20µA Kind of package: tube Max. load current: 10A Power dissipation: 64W | auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D10120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. forward impulse current: 55A Leakage current: 20µA Kind of package: tube Max. load current: 10A Power dissipation: 64W Anzahl je Verpackung: 1 Stücke | auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D15120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Anzahl je Verpackung: 1 Stücke | auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D15120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube | auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D16065HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. load current: 16A | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D16065HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. load current: 16A Anzahl je Verpackung: 1 Stücke | auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D16120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.82V Max. forward impulse current: 80A Leakage current: 30µA Kind of package: tube Max. load current: 16A Power dissipation: 74W | auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D16120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.82V Max. forward impulse current: 80A Leakage current: 30µA Kind of package: tube Max. load current: 16A Power dissipation: 74W Anzahl je Verpackung: 1 Stücke | auf Bestellung 33 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D20065F1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Case: TO263-2 Load current: 20A Max. off-state voltage: 650V Semiconductor structure: single diode Anzahl je Verpackung: 1 Stücke | auf Bestellung 520 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D20065F1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Case: TO263-2 Load current: 20A Max. off-state voltage: 650V Semiconductor structure: single diode | auf Bestellung 520 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D20065H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.7V Max. forward impulse current: 146A Leakage current: 15µA Kind of package: tube Power dissipation: 130W | auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D20065H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.7V Max. forward impulse current: 146A Leakage current: 15µA Kind of package: tube Power dissipation: 130W Anzahl je Verpackung: 1 Stücke | auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D20065HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Leakage current: 30µA Max. forward voltage: 1.75V Load current: 10A x2 Max. load current: 20A Power dissipation: 74W Max. forward impulse current: 70A Max. off-state voltage: 650V Semiconductor structure: common cathode; double Anzahl je Verpackung: 1 Stücke | auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D20065HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Leakage current: 30µA Max. forward voltage: 1.75V Load current: 10A x2 Max. load current: 20A Power dissipation: 74W Max. forward impulse current: 70A Max. off-state voltage: 650V Semiconductor structure: common cathode; double | auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D20065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO220-2 Load current: 20A Max. off-state voltage: 650V Semiconductor structure: single diode | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| B2D20065TF | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO3PF Leakage current: 20µA Max. forward voltage: 1.62V Load current: 10A x2 Max. load current: 20A Power dissipation: 33W Max. forward impulse current: 70A Max. off-state voltage: 650V Semiconductor structure: common cathode; double Anzahl je Verpackung: 1 Stücke | auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D20065TF | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO3PF Leakage current: 20µA Max. forward voltage: 1.62V Load current: 10A x2 Max. load current: 20A Power dissipation: 33W Max. forward impulse current: 70A Max. off-state voltage: 650V Semiconductor structure: common cathode; double | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D20120F1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.8V Max. forward impulse current: 180A Kind of package: reel; tape Leakage current: 33µA Power dissipation: 122W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| B2D20120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.78V Max. forward impulse current: 190A Kind of package: tube Leakage current: 40µA Power dissipation: 159W | auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D20120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.78V Max. forward impulse current: 190A Kind of package: tube Leakage current: 40µA Power dissipation: 159W Anzahl je Verpackung: 1 Stücke | auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D20120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 2V Max. forward impulse current: 90A Kind of package: tube Leakage current: 40µA Max. load current: 20A Power dissipation: 60W Anzahl je Verpackung: 1 Stücke | auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D20120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 2V Max. forward impulse current: 90A Kind of package: tube Leakage current: 40µA Max. load current: 20A Power dissipation: 60W | auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D30065H1 | BASiC SEMICONDUCTOR | B2D30065H1 THT Schottky diodes | auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D30065HC1 | BASiC SEMICONDUCTOR | B2D30065HC1 THT Schottky diodes | auf Bestellung 44 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D30120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube | auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D30120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Anzahl je Verpackung: 1 Stücke | auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D30120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; 95W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.75V Max. forward impulse current: 135A Leakage current: 40µA Kind of package: tube Max. load current: 30A Power dissipation: 95W Anzahl je Verpackung: 1 Stücke | auf Bestellung 39 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D30120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; 95W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.75V Max. forward impulse current: 135A Leakage current: 40µA Kind of package: tube Max. load current: 30A Power dissipation: 95W | auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D40065H1 | BASiC SEMICONDUCTOR | B2D40065H1 THT Schottky diodes | auf Bestellung 21 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D40120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 40A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube | auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D40120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 40A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Anzahl je Verpackung: 1 Stücke | auf Bestellung 38 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D40120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 112W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.92V Max. load current: 40A Max. forward impulse current: 180A Kind of package: tube Leakage current: 30µA Power dissipation: 112W | auf Bestellung 76 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D40120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 112W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.92V Max. load current: 40A Max. forward impulse current: 180A Kind of package: tube Leakage current: 30µA Power dissipation: 112W Anzahl je Verpackung: 1 Stücke | auf Bestellung 76 Stücke: Lieferzeit 7-14 Tag (e) |
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| B2D60120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2.1V Max. forward impulse current: 340A Kind of package: tube Technology: SiC Leakage current: 70µA Power dissipation: 361W | auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D60120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2.1V Max. forward impulse current: 340A Kind of package: tube Technology: SiC Leakage current: 70µA Power dissipation: 361W Anzahl je Verpackung: 1 Stücke | auf Bestellung 11 Stücke: Lieferzeit 7-14 Tag (e) |
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