Produkte > B2D
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||
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| B2D-211213 | OTTO | Basic / Snap Action Switches REDUCED DEAD BREAK, .2 WIDE,BTN,SGL SLDR | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| B2D-212211 | OTTO | Basic / Snap Action Switches Sub-Subminiature Basic Switch | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| B2D-213213 | OTTO | Basic / Snap Action Switches B2, LOW DEADBREAK, .2 WIDE,BTN, QC TERM | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| B2D02120E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.92V Leakage current: 20µA Max. forward impulse current: 22A Kind of package: reel; tape Technology: SiC Power dissipation: 34W | auf Bestellung 3276 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D04065E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO252-2 Max. forward voltage: 1.6V Max. forward impulse current: 31A Leakage current: 20µA Kind of package: reel; tape Power dissipation: 39W | auf Bestellung 2451 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D04065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.6V Max. forward impulse current: 34A Leakage current: 20µA Kind of package: tube Power dissipation: 39W | auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D16065HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 11uA Mounting: THT Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Technology: SiC Leakage current: 11µA Max. forward voltage: 1.73V Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 650V Case: TO247-3 Kind of package: tube | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D20065F1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape Mounting: SMD Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying Leakage current: 13µA Load current: 20A Power dissipation: 100W Max. forward impulse current: 140A Max. forward voltage: 1.67V Max. off-state voltage: 650V Kind of package: reel; tape Case: TO263-2 | auf Bestellung 520 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D20065H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA Mounting: THT Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying Leakage current: 15µA Load current: 20A Power dissipation: 130W Max. forward impulse current: 146A Max. forward voltage: 1.7V Max. off-state voltage: 650V Kind of package: tube Case: TO247-2 | auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D20065HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA Mounting: THT Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying Leakage current: 30µA Load current: 10A x2 Power dissipation: 74W Max. forward impulse current: 70A Max. forward voltage: 1.75V Max. load current: 20A Max. off-state voltage: 650V Kind of package: tube Case: TO247-3 | auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D20065TF | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA Mounting: THT Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying Leakage current: 20µA Load current: 10A x2 Power dissipation: 33W Max. forward impulse current: 70A Max. forward voltage: 1.62V Max. load current: 20A Max. off-state voltage: 650V Kind of package: tube Case: TO3PF | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| B2D20120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Leakage current: 40µA Max. forward voltage: 1.78V Power dissipation: 159W Load current: 20A Max. forward impulse current: 190A Max. off-state voltage: 1.2kV Case: TO247-2 | auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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