Foto | Bezeichnung | Hersteller | Beschreibung |
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74LVC2G66DC,125 | NEXPERIA |
![]() Description: IC: analog switch; bilateral,switch; SMD; VSSOP8; LVC; 1.6÷5.5VDC Type of integrated circuit: analog switch Case: VSSOP8 Supply voltage: 1.6...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Kind of integrated circuit: bilateral; switch Family: LVC |
Produkt ist nicht verfügbar |
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PZU14B2,115 | NEXPERIA |
![]() Description: Diode: Zener; 0.55W; 14V; SMD; reel,tape; SOD323F; Ifmax: 200mA Kind of package: reel; tape Case: SOD323F Mounting: SMD Semiconductor structure: single diode Type of diode: Zener Leakage current: 0.1µA Max. load current: 0.2A Power dissipation: 0.55W Max. forward voltage: 1.1V Tolerance: ±2% Zener voltage: 14V |
auf Bestellung 2627 Stücke: Lieferzeit 14-21 Tag (e) |
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PBSS5230T,215 | NEXPERIA |
![]() Description: Transistor: PNP; bipolar; 30V; 2A; SOT23,TO236AB Mounting: SMD Case: SOT23; TO236AB Kind of package: 7 inch reel; tape Collector current: 2A Collector-emitter voltage: 30V Current gain: 100...450 Frequency: 200MHz Polarisation: bipolar Type of transistor: PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
PBSS8110T-QR | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; 100V; 1A; 0.48W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 100MHz Power dissipation: 0.48W Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BCW60B,215 | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 0.2A Current gain: 20...310 Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 250MHz |
auf Bestellung 5364 Stücke: Lieferzeit 14-21 Tag (e) |
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PMV65XP,215 | NEXPERIA |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 833mW; SOT23,TO236AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 135mΩ Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 833mW |
auf Bestellung 5694 Stücke: Lieferzeit 14-21 Tag (e) |
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PMV65XPEAR | NEXPERIA |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -120mA; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -120mA Case: SOT23; TO236AB On-state resistance: 114mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 710 Stücke: Lieferzeit 14-21 Tag (e) |
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PMV65XPVL | NEXPERIA |
![]() Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.8A; Idm: -16A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -16A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
PMEG3020CEP-QX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMEG3020EGW-QX | NEXPERIA |
![]() Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSR43-QX | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC62,SOT89 Application: automotive industry Polarisation: bipolar Type of transistor: NPN Kind of package: reel; tape Case: SC62; SOT89 Mounting: SMD Collector current: 1A Power dissipation: 1.35W Current gain: 30...300 Collector-emitter voltage: 80V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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1PS76SB10,115 | NEXPERIA |
![]() ![]() Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Case: SOD323 Load current: 0.2A Max. forward impulse current: 0.6A Max. forward voltage: 0.8V Max. off-state voltage: 30V |
auf Bestellung 6034 Stücke: Lieferzeit 14-21 Tag (e) |
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1PS76SB10,135 | NEXPERIA |
![]() Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Case: SOD323 Load current: 0.2A Max. forward impulse current: 0.6A Max. forward voltage: 0.8V Max. off-state voltage: 30V |
auf Bestellung 913 Stücke: Lieferzeit 14-21 Tag (e) |
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1PS76SB10-QX | NEXPERIA |
![]() Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Case: SOD323 Load current: 0.2A Max. forward impulse current: 0.6A Max. forward voltage: 0.8V Max. off-state voltage: 30V |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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1PS76SB10-QZ | NEXPERIA |
![]() Description: 1PS76SB10-QZ |
auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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PESD5V0C2UMYL | NEXPERIA |
Category: Diodes - Unclassified Description: PESD5V0C2UMYL |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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NX3020NAKV,115 | NEXPERIA |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 120mA; Idm: 0.8A; 375mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.12A Power dissipation: 375mW Case: SOT666 Gate-source voltage: ±20V On-state resistance: 9.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.44nC Pulsed drain current: 0.8A |
auf Bestellung 864 Stücke: Lieferzeit 14-21 Tag (e) |
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PMBT2907AMYL | NEXPERIA |
![]() Description: Transistor: PNP Type of transistor: PNP |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84-C6V2-QR | NEXPERIA |
![]() Description: Diode: Zener; 0.25W; 6.2V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 6.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BZX84-C6V2,235 | NEXPERIA |
![]() Description: Diode: Zener; 0.25W; 6.2V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 6.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode Leakage current: 3µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BC857B,235 | NEXPERIA |
![]() Description: Transistor: PNP; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 220...475 Mounting: SMD Kind of package: 11 inch reel; tape Frequency: 100MHz Pulsed collector current: 0.2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BAV102,115 | NEXPERIA |
![]() Description: Diode: switching; SMD; 200V; 250mA; 50ns; SOD80; Ufmax: 1.25V; 400mW Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: fast switching Type of diode: switching Reverse recovery time: 50ns Load current: 0.25A Max. forward voltage: 1.25V Power dissipation: 0.4W Max. load current: 0.625A Max. forward impulse current: 9A Max. off-state voltage: 200V Case: SOD80 Kind of package: reel; tape |
auf Bestellung 1459 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT754C,215 | NEXPERIA |
![]() Description: Diode: Schottky rectifying; SOT23; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Max. forward voltage: 0.6V Max. forward impulse current: 0.6A Kind of package: reel; tape |
auf Bestellung 1184 Stücke: Lieferzeit 14-21 Tag (e) |
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GAN080-650EBEZ | NEXPERIA |
![]() Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 29A; Idm: 58A; 240W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 29A Pulsed drain current: 58A Case: DFN8080-8 Gate-source voltage: -6...7V On-state resistance: 80mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 240W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
GAN140-650EBEZ | NEXPERIA |
![]() Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 32A Case: DFN8080-8 Gate-source voltage: -1.4...7V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.5nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 113W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
GAN140-650FBEZ | NEXPERIA |
![]() Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 32A Case: DFN5060-5 Gate-source voltage: -1.4...7V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.5nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 113W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
GAN190-650EBEZ | NEXPERIA |
![]() Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11.5A Pulsed drain current: 20.5A Case: DFN8080-8 Gate-source voltage: -1.4...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.8nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 125W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
GAN190-650FBEZ | NEXPERIA |
![]() Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11.5A Pulsed drain current: 20.5A Case: DFN5060-5 Gate-source voltage: -1.4...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.8nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 125W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
GAN3R2-100CBEAZ | NEXPERIA |
![]() Description: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 230A Case: WLCSP8 Gate-source voltage: -4...6V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 12nC Kind of package: tape Kind of channel: enhancement Power dissipation: 394W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
GAN7R0-150LBEZ | NEXPERIA |
![]() Description: Transistor: N-JFET; GaN; unipolar; HEMT; 150V; 28A; Idm: 120A; 28W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 150V Drain current: 28A Pulsed drain current: 120A Case: FCLGA3 Gate-source voltage: -4...6V On-state resistance: 7mΩ Mounting: SMD Gate charge: 7.6nC Kind of package: tape Kind of channel: enhancement Power dissipation: 28W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BUK9M11-40HX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W Case: LFPAK33; SOT1210 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Gate charge: 21nC On-state resistance: 27.2mΩ Power dissipation: 50W Drain current: 34A Drain-source voltage: 40V Pulsed drain current: 193A Application: automotive industry Polarisation: unipolar Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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1PS76SB21,115 | NEXPERIA |
![]() ![]() Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 1A Kind of package: reel; tape |
auf Bestellung 418 Stücke: Lieferzeit 14-21 Tag (e) |
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PBSS5220PAPSX | NEXPERIA |
![]() Description: Transistor: PNP x2; bipolar; 20V; 2A; DFN2020D-6,SOT1118D Mounting: SMD Case: DFN2020D-6; SOT1118D Kind of package: reel; tape Collector current: 2A Collector-emitter voltage: 20V Current gain: 100...400 Frequency: 95MHz Polarisation: bipolar Type of transistor: PNP x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NX138AKVL | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.12A; Idm: 0.765A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.12A Pulsed drain current: 0.765A Power dissipation: 0.265W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 0.9nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 8974 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVT14D,118 | NEXPERIA |
![]() Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; TTL Type of integrated circuit: digital Kind of gate: NOT Number of channels: 6 Mounting: SMD Case: SO14 Kind of package: reel; tape Kind of input: with Schmitt trigger Family: LVT Kind of integrated circuit: hex; inverter; Schmitt trigger Technology: TTL Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Number of inputs: 1 |
auf Bestellung 1391 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVT14PW,118 | NEXPERIA |
![]() Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; TTL Type of integrated circuit: digital Kind of gate: NOT Number of channels: 6 Mounting: SMD Case: TSSOP14 Kind of package: reel; tape Kind of input: with Schmitt trigger Family: LVT Kind of integrated circuit: hex; inverter; Schmitt trigger Technology: TTL Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Number of inputs: 1 |
auf Bestellung 944 Stücke: Lieferzeit 14-21 Tag (e) |
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74HCT7541D,118 | NEXPERIA |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL Operating temperature: -40...125°C Number of channels: 8 Supply voltage: 4.5...5.5V DC Kind of output: 3-state Kind of integrated circuit: buffer; line driver; non-inverting Family: HCT Technology: CMOS; TTL Type of integrated circuit: digital Kind of package: reel; tape Mounting: SMD Case: SO20 Kind of input: with Schmitt trigger |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
74VHCT541D,118 | NEXPERIA |
![]() Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10 Operating temperature: -40...125°C Number of channels: 1 Supply voltage: 4.5...5.5V DC Number of inputs: 10 Kind of output: 3-state Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal Family: VHCT Technology: TTL Type of integrated circuit: digital Kind of package: reel; tape Mounting: SMD Case: SO20 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
74AUP2G240DC,125 | NEXPERIA |
![]() Description: IC: digital; 3-state,buffer,inverting,line driver; Ch: 2; IN: 2 Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; inverting; line driver Number of channels: 2 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: VSSOP8 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: 3-state Family: AUP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
74AUP2G240GS,115 | NEXPERIA |
![]() Description: IC: digital; 3-state,buffer,inverting,line driver; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; inverting; line driver Technology: CMOS Mounting: SMD Case: XSON8 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: 3-state Family: AUP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
74AUP2G240GT,115 | NEXPERIA |
![]() Description: IC: digital; 3-state,buffer,inverting,line driver; Ch: 2; IN: 2 Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; inverting; line driver Number of channels: 2 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: XSON8 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: 3-state Family: AUP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BZV85-C27,113 | NEXPERIA |
![]() Description: Diode: Zener; 1/1.3W; 27V; reel,tape; DO41; single diode; 500mA Type of diode: Zener Power dissipation: 1/1.3W Zener voltage: 27V Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Max. load current: 0.5A Max. forward voltage: 1V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BUK7M12-60EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 24.8nC On-state resistance: 27mΩ Drain current: 37A Power dissipation: 75W Gate-source voltage: ±20V Pulsed drain current: 211A Drain-source voltage: 60V Application: automotive industry Case: LFPAK33; SOT1210 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PTVS5V0S1UR,115 | NEXPERIA |
![]() Description: Diode: TVS; 400W; 6.7V; 43.5A; unidirectional; SOD123W; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.7V Max. forward impulse current: 43.5A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Operating temperature: max. 150°C Leakage current: 5µA |
auf Bestellung 6455 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT721C,215 | NEXPERIA |
![]() Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common cathode; double Max. forward voltage: 0.55V Max. forward impulse current: 1A Kind of package: reel; tape |
auf Bestellung 2229 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC8T245BQ-Q100J | NEXPERIA |
![]() Description: IC: digital; 8bit,bidirectional,transceiver,translator; CMOS Type of integrated circuit: digital Kind of integrated circuit: 8bit; bidirectional; transceiver; translator Supply voltage: 1.2...5.5V DC Mounting: SMD Case: DHVQFN24 Operating temperature: -40...125°C Kind of output: 3-state Family: LVC Kind of package: reel; tape Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
74LVC8T245BQ,118 | NEXPERIA |
![]() Description: IC: digital; 3-state,8bit,octal,transceiver,translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: 3-state; 8bit; octal; transceiver; translator Number of channels: 1 Supply voltage: 1.2...5.5V DC Mounting: SMD Case: DHVQFN24 Operating temperature: -40...125°C Kind of output: 3-state Family: LVC Kind of package: reel; tape Technology: CMOS; TTL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
74LVC8T245BZX | NEXPERIA |
![]() Description: IC: digital; 3-state,8bit,octal,transceiver,translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: 3-state; 8bit; octal; transceiver; translator Number of channels: 1 Supply voltage: 1.2...5.5V DC Mounting: SMD Case: DHXQFN24 Operating temperature: -40...125°C Kind of output: 3-state Family: LVC Kind of package: reel; tape Technology: CMOS; TTL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PMV65UNEAR | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 1.8A; Idm: 11A; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.8A Pulsed drain current: 11A Case: SOT23; TO236AB Gate-source voltage: ±8V On-state resistance: 108mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Technology: Trench Gate charge: 6nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
PMPB95ENEA/FX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 1.8A; Idm: 11.2A; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 1.8A Pulsed drain current: 11.2A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±20V On-state resistance: 202mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Technology: Trench Gate charge: 14.9nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PMPB95ENEAX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 1.8A; Idm: 11.2A; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 1.8A Pulsed drain current: 11.2A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±20V On-state resistance: 202mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Technology: Trench Gate charge: 14.9nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PMEG2020EH,115 | NEXPERIA |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 2A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 60pF Max. forward voltage: 0.525V Load current: 2A Max. load current: 7A Max. forward impulse current: 9A Max. off-state voltage: 20V Case: SOD123F |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMEG2020EJ,115 | NEXPERIA |
![]() Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 2A; reel,tape Type of diode: Schottky rectifying Case: SC90; SOD323F Mounting: SMD Max. off-state voltage: 20V Load current: 2A Semiconductor structure: single diode Capacitance: 60pF Max. forward voltage: 0.525V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BC53-16PA,115 | NEXPERIA |
![]() Description: Transistor: PNP; bipolar; 80V; 1A; DFN2020-3,SOT1061 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Case: DFN2020-3; SOT1061 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 145MHz |
auf Bestellung 1570 Stücke: Lieferzeit 14-21 Tag (e) |
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BC53-10PA,115 | NEXPERIA |
![]() Description: Transistor: PNP; bipolar; 80V; 1A; DFN2020-3,SOT1061 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Case: DFN2020-3; SOT1061 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 145MHz |
auf Bestellung 2975 Stücke: Lieferzeit 14-21 Tag (e) |
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BC52PA,115 | NEXPERIA |
![]() Description: Transistor: PNP; bipolar; 60V; 1A; DFN2020-3,SOT1061 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Case: DFN2020-3; SOT1061 Current gain: 63...250 Mounting: SMD Kind of package: reel; tape Frequency: 145MHz |
auf Bestellung 2840 Stücke: Lieferzeit 14-21 Tag (e) |
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TDZ10J,115 | NEXPERIA |
![]() Description: Diode: Zener; 500mW; 10V; SMD; reel,tape; SOD323F; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 1.1V Case: SOD323F Max. load current: 0.25A Semiconductor structure: single diode Leakage current: 0.2µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PZTA92,115 | NEXPERIA |
![]() Description: Transistor: PNP; bipolar; 300V; 0.1A; 1.2W; SC73,SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.1A Power dissipation: 1.2W Case: SC73; SOT223 Current gain: 40 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
auf Bestellung 1768 Stücke: Lieferzeit 14-21 Tag (e) |
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PZTA92-QX | NEXPERIA |
![]() Description: Transistor: PNP; bipolar; 300V; 0.1A; 1.2W; SC73,SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.1A Power dissipation: 1.2W Case: SC73; SOT223 Current gain: 40 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Pulsed collector current: 0.2A Application: automotive industry |
auf Bestellung 345 Stücke: Lieferzeit 14-21 Tag (e) |
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74HC4511D,653 | NEXPERIA |
![]() Description: IC: digital; BCD to 7-segment,decoder,driver,latch; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SO16 Family: HC Operating temperature: -40...125°C Kind of package: reel; tape |
auf Bestellung 2395 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC2G66DC,125 |
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Hersteller: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: analog switch; bilateral,switch; SMD; VSSOP8; LVC; 1.6÷5.5VDC
Type of integrated circuit: analog switch
Case: VSSOP8
Supply voltage: 1.6...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Kind of integrated circuit: bilateral; switch
Family: LVC
Category: Decoders, multiplexers, switches
Description: IC: analog switch; bilateral,switch; SMD; VSSOP8; LVC; 1.6÷5.5VDC
Type of integrated circuit: analog switch
Case: VSSOP8
Supply voltage: 1.6...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Kind of integrated circuit: bilateral; switch
Family: LVC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PZU14B2,115 |
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Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 14V; SMD; reel,tape; SOD323F; Ifmax: 200mA
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.1µA
Max. load current: 0.2A
Power dissipation: 0.55W
Max. forward voltage: 1.1V
Tolerance: ±2%
Zener voltage: 14V
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 14V; SMD; reel,tape; SOD323F; Ifmax: 200mA
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.1µA
Max. load current: 0.2A
Power dissipation: 0.55W
Max. forward voltage: 1.1V
Tolerance: ±2%
Zener voltage: 14V
auf Bestellung 2627 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
355+ | 0.2 EUR |
738+ | 0.097 EUR |
1404+ | 0.051 EUR |
1485+ | 0.048 EUR |
PBSS5230T,215 |
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Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 2A; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Kind of package: 7 inch reel; tape
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 100...450
Frequency: 200MHz
Polarisation: bipolar
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 2A; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Kind of package: 7 inch reel; tape
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 100...450
Frequency: 200MHz
Polarisation: bipolar
Type of transistor: PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PBSS8110T-QR |
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Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.48W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 100MHz
Power dissipation: 0.48W
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.48W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 100MHz
Power dissipation: 0.48W
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCW60B,215 |
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Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Current gain: 20...310
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Current gain: 20...310
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 250MHz
auf Bestellung 5364 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
313+ | 0.23 EUR |
462+ | 0.16 EUR |
549+ | 0.13 EUR |
806+ | 0.089 EUR |
PMV65XP,215 |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 833mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 833mW
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 833mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 833mW
auf Bestellung 5694 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
219+ | 0.33 EUR |
321+ | 0.22 EUR |
385+ | 0.19 EUR |
612+ | 0.12 EUR |
648+ | 0.11 EUR |
PMV65XPEAR |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -120mA; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -120mA
Case: SOT23; TO236AB
On-state resistance: 114mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -120mA; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -120mA
Case: SOT23; TO236AB
On-state resistance: 114mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 710 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
178+ | 0.4 EUR |
248+ | 0.29 EUR |
360+ | 0.2 EUR |
379+ | 0.19 EUR |
500+ | 0.18 EUR |
PMV65XPVL |
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Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.8A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -16A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.8A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -16A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PMEG3020CEP-QX |
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.21 EUR |
PMEG3020EGW-QX |
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Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
BSR43-QX |
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Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC62,SOT89
Application: automotive industry
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Case: SC62; SOT89
Mounting: SMD
Collector current: 1A
Power dissipation: 1.35W
Current gain: 30...300
Collector-emitter voltage: 80V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC62,SOT89
Application: automotive industry
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Case: SC62; SOT89
Mounting: SMD
Collector current: 1A
Power dissipation: 1.35W
Current gain: 30...300
Collector-emitter voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1PS76SB10,115 |
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Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
auf Bestellung 6034 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
603+ | 0.12 EUR |
834+ | 0.086 EUR |
958+ | 0.075 EUR |
1619+ | 0.044 EUR |
1713+ | 0.042 EUR |
1PS76SB10,135 |
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Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
auf Bestellung 913 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
575+ | 0.12 EUR |
842+ | 0.085 EUR |
913+ | 0.079 EUR |
1PS76SB10-QX |
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Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
90+ | 0.8 EUR |
1PS76SB10-QZ |
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auf Bestellung 45000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.048 EUR |
PESD5V0C2UMYL |
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.12 EUR |
NX3020NAKV,115 |
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Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 120mA; Idm: 0.8A; 375mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.12A
Power dissipation: 375mW
Case: SOT666
Gate-source voltage: ±20V
On-state resistance: 9.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.44nC
Pulsed drain current: 0.8A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 120mA; Idm: 0.8A; 375mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.12A
Power dissipation: 375mW
Case: SOT666
Gate-source voltage: ±20V
On-state resistance: 9.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.44nC
Pulsed drain current: 0.8A
auf Bestellung 864 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
197+ | 0.36 EUR |
242+ | 0.3 EUR |
532+ | 0.13 EUR |
736+ | 0.097 EUR |
782+ | 0.092 EUR |
PMBT2907AMYL |
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Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.07 EUR |
BZX84-C6V2-QR |
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Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 6.2V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 6.2V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX84-C6V2,235 |
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Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 6.2V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Leakage current: 3µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 6.2V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Leakage current: 3µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC857B,235 |
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Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: 11 inch reel; tape
Frequency: 100MHz
Pulsed collector current: 0.2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: 11 inch reel; tape
Frequency: 100MHz
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAV102,115 |
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Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 250mA; 50ns; SOD80; Ufmax: 1.25V; 400mW
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: switching
Reverse recovery time: 50ns
Load current: 0.25A
Max. forward voltage: 1.25V
Power dissipation: 0.4W
Max. load current: 0.625A
Max. forward impulse current: 9A
Max. off-state voltage: 200V
Case: SOD80
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 250mA; 50ns; SOD80; Ufmax: 1.25V; 400mW
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: switching
Reverse recovery time: 50ns
Load current: 0.25A
Max. forward voltage: 1.25V
Power dissipation: 0.4W
Max. load current: 0.625A
Max. forward impulse current: 9A
Max. off-state voltage: 200V
Case: SOD80
Kind of package: reel; tape
auf Bestellung 1459 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
190+ | 0.38 EUR |
319+ | 0.22 EUR |
368+ | 0.19 EUR |
562+ | 0.13 EUR |
676+ | 0.11 EUR |
BAT754C,215 |
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Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
auf Bestellung 1184 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
350+ | 0.2 EUR |
424+ | 0.17 EUR |
455+ | 0.16 EUR |
544+ | 0.13 EUR |
589+ | 0.12 EUR |
GAN080-650EBEZ |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 29A; Idm: 58A; 240W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 29A
Pulsed drain current: 58A
Case: DFN8080-8
Gate-source voltage: -6...7V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 240W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 29A; Idm: 58A; 240W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 29A
Pulsed drain current: 58A
Case: DFN8080-8
Gate-source voltage: -6...7V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 240W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GAN140-650EBEZ |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 32A
Case: DFN8080-8
Gate-source voltage: -1.4...7V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 113W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 32A
Case: DFN8080-8
Gate-source voltage: -1.4...7V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 113W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GAN140-650FBEZ |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 32A
Case: DFN5060-5
Gate-source voltage: -1.4...7V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 113W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 32A
Case: DFN5060-5
Gate-source voltage: -1.4...7V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 113W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GAN190-650EBEZ |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 20.5A
Case: DFN8080-8
Gate-source voltage: -1.4...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.8nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 125W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 20.5A
Case: DFN8080-8
Gate-source voltage: -1.4...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.8nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 125W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GAN190-650FBEZ |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 20.5A
Case: DFN5060-5
Gate-source voltage: -1.4...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.8nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 125W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 20.5A
Case: DFN5060-5
Gate-source voltage: -1.4...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.8nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 125W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GAN3R2-100CBEAZ |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 230A
Case: WLCSP8
Gate-source voltage: -4...6V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 394W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 230A
Case: WLCSP8
Gate-source voltage: -4...6V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 394W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GAN7R0-150LBEZ |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 150V; 28A; Idm: 120A; 28W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 150V
Drain current: 28A
Pulsed drain current: 120A
Case: FCLGA3
Gate-source voltage: -4...6V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 28W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 150V; 28A; Idm: 120A; 28W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 150V
Drain current: 28A
Pulsed drain current: 120A
Case: FCLGA3
Gate-source voltage: -4...6V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 28W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BUK9M11-40HX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W
Case: LFPAK33; SOT1210
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate charge: 21nC
On-state resistance: 27.2mΩ
Power dissipation: 50W
Drain current: 34A
Drain-source voltage: 40V
Pulsed drain current: 193A
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W
Case: LFPAK33; SOT1210
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate charge: 21nC
On-state resistance: 27.2mΩ
Power dissipation: 50W
Drain current: 34A
Drain-source voltage: 40V
Pulsed drain current: 193A
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1PS76SB21,115 |
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Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 1A
Kind of package: reel; tape
auf Bestellung 418 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
PBSS5220PAPSX |
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Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 2A; DFN2020D-6,SOT1118D
Mounting: SMD
Case: DFN2020D-6; SOT1118D
Kind of package: reel; tape
Collector current: 2A
Collector-emitter voltage: 20V
Current gain: 100...400
Frequency: 95MHz
Polarisation: bipolar
Type of transistor: PNP x2
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 20V; 2A; DFN2020D-6,SOT1118D
Mounting: SMD
Case: DFN2020D-6; SOT1118D
Kind of package: reel; tape
Collector current: 2A
Collector-emitter voltage: 20V
Current gain: 100...400
Frequency: 95MHz
Polarisation: bipolar
Type of transistor: PNP x2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NX138AKVL |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.12A; Idm: 0.765A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.12A
Pulsed drain current: 0.765A
Power dissipation: 0.265W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.12A; Idm: 0.765A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.12A
Pulsed drain current: 0.765A
Power dissipation: 0.265W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 8974 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1020+ | 0.071 EUR |
1280+ | 0.056 EUR |
1460+ | 0.05 EUR |
3000+ | 0.045 EUR |
74LVT14D,118 |
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Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; TTL
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVT
Kind of integrated circuit: hex; inverter; Schmitt trigger
Technology: TTL
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; TTL
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVT
Kind of integrated circuit: hex; inverter; Schmitt trigger
Technology: TTL
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Number of inputs: 1
auf Bestellung 1391 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.63 EUR |
61+ | 1.17 EUR |
68+ | 1.07 EUR |
100+ | 0.94 EUR |
250+ | 0.89 EUR |
500+ | 0.88 EUR |
74LVT14PW,118 |
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Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; TTL
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVT
Kind of integrated circuit: hex; inverter; Schmitt trigger
Technology: TTL
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; TTL
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVT
Kind of integrated circuit: hex; inverter; Schmitt trigger
Technology: TTL
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Number of inputs: 1
auf Bestellung 944 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.59 EUR |
63+ | 1.15 EUR |
71+ | 1.02 EUR |
77+ | 0.94 EUR |
100+ | 0.92 EUR |
74HCT7541D,118 |
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Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Operating temperature: -40...125°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; line driver; non-inverting
Family: HCT
Technology: CMOS; TTL
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Case: SO20
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Operating temperature: -40...125°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; line driver; non-inverting
Family: HCT
Technology: CMOS; TTL
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Case: SO20
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74VHCT541D,118 |
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Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Number of inputs: 10
Kind of output: 3-state
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Family: VHCT
Technology: TTL
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Case: SO20
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Number of inputs: 10
Kind of output: 3-state
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Family: VHCT
Technology: TTL
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Case: SO20
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74AUP2G240DC,125 |
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Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; 3-state,buffer,inverting,line driver; Ch: 2; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; inverting; line driver
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: VSSOP8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Category: Gates, inverters
Description: IC: digital; 3-state,buffer,inverting,line driver; Ch: 2; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; inverting; line driver
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: VSSOP8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74AUP2G240GS,115 |
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Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,inverting,line driver; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; inverting; line driver
Technology: CMOS
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,inverting,line driver; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; inverting; line driver
Technology: CMOS
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74AUP2G240GT,115 |
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Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; 3-state,buffer,inverting,line driver; Ch: 2; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; inverting; line driver
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Category: Gates, inverters
Description: IC: digital; 3-state,buffer,inverting,line driver; Ch: 2; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; inverting; line driver
Number of channels: 2
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZV85-C27,113 |
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Hersteller: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1/1.3W; 27V; reel,tape; DO41; single diode; 500mA
Type of diode: Zener
Power dissipation: 1/1.3W
Zener voltage: 27V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1V
Category: THT Zener diodes
Description: Diode: Zener; 1/1.3W; 27V; reel,tape; DO41; single diode; 500mA
Type of diode: Zener
Power dissipation: 1/1.3W
Zener voltage: 27V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BUK7M12-60EX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 24.8nC
On-state resistance: 27mΩ
Drain current: 37A
Power dissipation: 75W
Gate-source voltage: ±20V
Pulsed drain current: 211A
Drain-source voltage: 60V
Application: automotive industry
Case: LFPAK33; SOT1210
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 24.8nC
On-state resistance: 27mΩ
Drain current: 37A
Power dissipation: 75W
Gate-source voltage: ±20V
Pulsed drain current: 211A
Drain-source voltage: 60V
Application: automotive industry
Case: LFPAK33; SOT1210
Produkt ist nicht verfügbar
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PTVS5V0S1UR,115 |
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Hersteller: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.7V; 43.5A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Operating temperature: max. 150°C
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.7V; 43.5A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Operating temperature: max. 150°C
Leakage current: 5µA
auf Bestellung 6455 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
120+ | 0.6 EUR |
145+ | 0.49 EUR |
220+ | 0.33 EUR |
250+ | 0.29 EUR |
500+ | 0.22 EUR |
1000+ | 0.19 EUR |
1500+ | 0.18 EUR |
BAT721C,215 |
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Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.55V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.55V
Max. forward impulse current: 1A
Kind of package: reel; tape
auf Bestellung 2229 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
200+ | 0.36 EUR |
252+ | 0.28 EUR |
281+ | 0.25 EUR |
500+ | 0.19 EUR |
74LVC8T245BQ-Q100J |
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Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; 8bit,bidirectional,transceiver,translator; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; bidirectional; transceiver; translator
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: DHVQFN24
Operating temperature: -40...125°C
Kind of output: 3-state
Family: LVC
Kind of package: reel; tape
Technology: CMOS
Category: Level translators
Description: IC: digital; 8bit,bidirectional,transceiver,translator; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; bidirectional; transceiver; translator
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: DHVQFN24
Operating temperature: -40...125°C
Kind of output: 3-state
Family: LVC
Kind of package: reel; tape
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
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74LVC8T245BQ,118 |
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Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; 3-state,8bit,octal,transceiver,translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; octal; transceiver; translator
Number of channels: 1
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: DHVQFN24
Operating temperature: -40...125°C
Kind of output: 3-state
Family: LVC
Kind of package: reel; tape
Technology: CMOS; TTL
Category: Level translators
Description: IC: digital; 3-state,8bit,octal,transceiver,translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; octal; transceiver; translator
Number of channels: 1
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: DHVQFN24
Operating temperature: -40...125°C
Kind of output: 3-state
Family: LVC
Kind of package: reel; tape
Technology: CMOS; TTL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LVC8T245BZX |
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Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; 3-state,8bit,octal,transceiver,translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; octal; transceiver; translator
Number of channels: 1
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: DHXQFN24
Operating temperature: -40...125°C
Kind of output: 3-state
Family: LVC
Kind of package: reel; tape
Technology: CMOS; TTL
Category: Level translators
Description: IC: digital; 3-state,8bit,octal,transceiver,translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; octal; transceiver; translator
Number of channels: 1
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: DHXQFN24
Operating temperature: -40...125°C
Kind of output: 3-state
Family: LVC
Kind of package: reel; tape
Technology: CMOS; TTL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PMV65UNEAR |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 1.8A; Idm: 11A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.8A
Pulsed drain current: 11A
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 108mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
Gate charge: 6nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 1.8A; Idm: 11A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.8A
Pulsed drain current: 11A
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 108mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
Gate charge: 6nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PMPB95ENEA/FX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 1.8A; Idm: 11.2A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 1.8A
Pulsed drain current: 11.2A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 202mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
Gate charge: 14.9nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 1.8A; Idm: 11.2A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 1.8A
Pulsed drain current: 11.2A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 202mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
Gate charge: 14.9nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PMPB95ENEAX |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 1.8A; Idm: 11.2A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 1.8A
Pulsed drain current: 11.2A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 202mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
Gate charge: 14.9nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 1.8A; Idm: 11.2A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 1.8A
Pulsed drain current: 11.2A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 202mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
Gate charge: 14.9nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PMEG2020EH,115 |
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Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward voltage: 0.525V
Load current: 2A
Max. load current: 7A
Max. forward impulse current: 9A
Max. off-state voltage: 20V
Case: SOD123F
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward voltage: 0.525V
Load current: 2A
Max. load current: 7A
Max. forward impulse current: 9A
Max. off-state voltage: 20V
Case: SOD123F
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.5 EUR |
202+ | 0.35 EUR |
264+ | 0.27 EUR |
315+ | 0.23 EUR |
500+ | 0.17 EUR |
PMEG2020EJ,115 |
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Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward voltage: 0.525V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward voltage: 0.525V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC53-16PA,115 |
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Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; DFN2020-3,SOT1061
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: DFN2020-3; SOT1061
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 145MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; DFN2020-3,SOT1061
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: DFN2020-3; SOT1061
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 145MHz
auf Bestellung 1570 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
348+ | 0.21 EUR |
582+ | 0.12 EUR |
642+ | 0.11 EUR |
BC53-10PA,115 |
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Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; DFN2020-3,SOT1061
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: DFN2020-3; SOT1061
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 145MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; DFN2020-3,SOT1061
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: DFN2020-3; SOT1061
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 145MHz
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
241+ | 0.3 EUR |
321+ | 0.22 EUR |
500+ | 0.2 EUR |
1000+ | 0.19 EUR |
BC52PA,115 |
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Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; DFN2020-3,SOT1061
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Case: DFN2020-3; SOT1061
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 145MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; DFN2020-3,SOT1061
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Case: DFN2020-3; SOT1061
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 145MHz
auf Bestellung 2840 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.12 EUR |
101+ | 0.71 EUR |
127+ | 0.56 EUR |
183+ | 0.39 EUR |
1000+ | 0.23 EUR |
TDZ10J,115 |
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Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 10V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1.1V
Case: SOD323F
Max. load current: 0.25A
Semiconductor structure: single diode
Leakage current: 0.2µA
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 10V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1.1V
Case: SOD323F
Max. load current: 0.25A
Semiconductor structure: single diode
Leakage current: 0.2µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PZTA92,115 |
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Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.1A; 1.2W; SC73,SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 1.2W
Case: SC73; SOT223
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.1A; 1.2W; SC73,SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 1.2W
Case: SC73; SOT223
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
auf Bestellung 1768 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
88+ | 0.82 EUR |
151+ | 0.48 EUR |
202+ | 0.35 EUR |
227+ | 0.32 EUR |
253+ | 0.28 EUR |
PZTA92-QX |
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Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.1A; 1.2W; SC73,SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 1.2W
Case: SC73; SOT223
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Pulsed collector current: 0.2A
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.1A; 1.2W; SC73,SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 1.2W
Case: SC73; SOT223
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Pulsed collector current: 0.2A
Application: automotive industry
auf Bestellung 345 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
210+ | 0.34 EUR |
235+ | 0.3 EUR |
265+ | 0.27 EUR |
295+ | 0.24 EUR |
74HC4511D,653 |
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Hersteller: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO16
Family: HC
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO16
Family: HC
Operating temperature: -40...125°C
Kind of package: reel; tape
auf Bestellung 2395 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
69+ | 1.04 EUR |
97+ | 0.74 EUR |
108+ | 0.66 EUR |
124+ | 0.58 EUR |
250+ | 0.56 EUR |