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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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AOTF7N65 Produktcode: 153855
zu Favoriten hinzufügen
Lieblingsprodukt
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A&O |
 Transistoren > MOSFET N-CHGehäuse: TO-220F Drain-Source-Spannung Uds, V: 650 В Drain-Strom Idd, A: 7 A Durchlasswiderstand Rds(on), Ohm: 1,56 Ом Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 887/19 Montage: THT |
auf Bestellung: 30 St.
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7N65 | GOODWORK |
Description: 650V 7A 1.18@10V TO-252 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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7N65F | EVVO |
Description: MOSFET N-CH 650V 7A TO220F |
auf Bestellung 293 Stücke: Lieferzeit 10-14 Tag (e) |
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7N65F | UMW |
Description: MOSFET N-CH 650V 7A TO220F Packaging: Tube |
auf Bestellung 1966 Stücke: Lieferzeit 10-14 Tag (e) |
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7N65F | GOODWORK |
Description: 650V 7A 1.3@10V ITO-220AB-3 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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7N65L | UMW |
Description: MOSFET N-CH 650V 7A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V |
auf Bestellung 2496 Stücke: Lieferzeit 10-14 Tag (e) |
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AOD7N65 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 650V 7A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V |
auf Bestellung 2799 Stücke: Lieferzeit 10-14 Tag (e) |
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AOT7N65 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.5A Case: TO220 Gate-source voltage: ±30V On-state resistance: 1.56Ω Mounting: THT Gate charge: 19nC Kind of channel: enhancement |
auf Bestellung 260 Stücke: Lieferzeit 14-21 Tag (e) |
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AOT7N65 | ALPHA&OMEGA |
Transistor N-Channel MOSFET; 650V; 30V; 1,56Ohm; 7A; 192W; -55°C ~ 150°C; AOT7N65 TAOT7n65 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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AOTF7N65 | ALPHA&OMEGA |
Transistor N-Channel MOSFET; 650V; 30V; 1,56Ohm; 7A; 38,5W; -55°C ~ 150°C; AOTF7N65 TAOTF7n65 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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BXP7N65CF | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 46W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 351 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP7N65D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 145W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP7N65P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 167W Case: TO220 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 663 Stücke: Lieferzeit 14-21 Tag (e) |
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DI5A7N65D1K-AQ | Diotec Semiconductor |
MOSFETs MOSFET, DPAK, 650V, 5.7A, 150C, N, AEC-Q101 |
auf Bestellung 2383 Stücke: Lieferzeit 10-14 Tag (e) |
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DI5A7N65D1K-AQ | Diotec Semiconductor |
Description: MOSFET N-CH 650V 5.7A TO-252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 325 V Qualification: AEC-Q101 |
auf Bestellung 2450 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG7N65SCT | Diodes Incorporated | MOSFETs MOSFET BVDSS: 501V-650V |
auf Bestellung 380 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG7N65SCTI | Diodes Incorporated | MOSFETs MOSFET BVDSS: 501V-650V |
auf Bestellung 325 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH077N65F-F085 | onsemi |
Description: MOSFET N-CH 650V 54A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V Power Dissipation (Max): 481W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7162 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2996 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH077N65F-F085 | onsemi |
MOSFETs 650V N-Channel SuperFET II MOSFET |
auf Bestellung 888 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH077N65F-F085 | Fairchild Semiconductor |
Description: MOSFET N-CH 650V 54A TO247-3 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V Power Dissipation (Max): 481W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7162 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 148 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH077N65F-F155 | onsemi |
Description: MOSFET N-CH 650V 54A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V Power Dissipation (Max): 481W (Tc) Vgs(th) (Max) @ Id: 5V @ 5.4mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7109 pF @ 100 V |
auf Bestellung 467 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH077N65F-F155 | onsemi |
MOSFETs SuperFET2 650V, 77 mOhm, FRFET |
auf Bestellung 1292 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP067N65S3 | onsemi | MOSFETs 650V 44A N-Channel SuperFET MOSFET |
auf Bestellung 1532 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF067N65S3 | onsemi |
Description: MOSFET N-CH 650V 44A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 22A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4.4mA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V |
auf Bestellung 862 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF067N65S3 | onsemi |
MOSFETs SuperFET3 650V 67 mOhm |
auf Bestellung 4457 Stücke: Lieferzeit 10-14 Tag (e) |
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FQB7N65CTM | Fairchild Semiconductor |
Description: MOSFET N-CH 650V 7A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V Power Dissipation (Max): 173W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V |
auf Bestellung 7686 Stücke: Lieferzeit 10-14 Tag (e) |
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FQP7N65C | Fairchild Semiconductor |
Description: MOSFET N-CH 650V 7A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V |
auf Bestellung 25372 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF7N65CYDTU | Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, N |
auf Bestellung 1572 Stücke: Lieferzeit 10-14 Tag (e) |
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MDD7N65D | MDD |
Description: MOSFET N 650V 7A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V Power Dissipation (Max): 100W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V |
auf Bestellung 73876 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT7N65AC | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 7A 1.12 To251 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V Power Dissipation (Max): 100W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 4200 Stücke: Lieferzeit 10-14 Tag (e) |
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| MOT7N65AD | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 7A 1.12 To252 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V Power Dissipation (Max): 100W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| MOT7N65AF | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 650V 7A 1.12 To220F |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT7N65F | MOT |
TRANSISTOR Equivalent: MAGNACHIP MDF7N65BTH; MOT7N65F TO-220F T7N65F MOT Anzahl je Verpackung: 50 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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NTH027N65S3F-F155 | onsemi |
MOSFETs SF3 FRFET 650V 27MOHM |
auf Bestellung 234 Stücke: Lieferzeit 10-14 Tag (e) |
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NTH4L027N65S3F | onsemi |
Description: MOSFET N-CH 650V 75A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V Power Dissipation (Max): 595W (Tc) Vgs(th) (Max) @ Id: 5V @ 3mA Supplier Device Package: TO-247-4L Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 400 V |
auf Bestellung 395 Stücke: Lieferzeit 10-14 Tag (e) |
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NTH4L027N65S3F | onsemi |
MOSFETs FRFET 650V 75A 27.4 mOhm |
auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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NTH4L067N65S3H | onsemi |
MOSFETs SUPERFET3 FAST 67MOHM TO-247-4 |
auf Bestellung 435 Stücke: Lieferzeit 10-14 Tag (e) |
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NTH4LN067N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFE Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V Power Dissipation (Max): 266W (Tc) Vgs(th) (Max) @ Id: 4V @ 3.9mA Supplier Device Package: TO-247-4 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V |
auf Bestellung 1535 Stücke: Lieferzeit 10-14 Tag (e) |
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NTH4LN067N65S3H | onsemi |
MOSFETs SUPERFET3 FAST 67MOHM TO-247-4 |
auf Bestellung 371 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL027N65S3HF | onsemi |
Description: MOSFET N-CH 650V 75A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V Power Dissipation (Max): 595W (Tc) Vgs(th) (Max) @ Id: 5V @ 3mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 400 V |
auf Bestellung 1394 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL027N65S3HF | onsemi |
MOSFETs FRFET 650V 75A 27.4mOhm |
auf Bestellung 1256 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL067N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFE Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V Power Dissipation (Max): 266W (Tc) Vgs(th) (Max) @ Id: 4V @ 3.9mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V |
auf Bestellung 371 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL067N65S3H | onsemi |
MOSFETs SUPERFET3 FAST 67MOHM TO-247-3 |
auf Bestellung 59 Stücke: Lieferzeit 10-14 Tag (e) |
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NTP067N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 266W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 112A Power dissipation: 266W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 67mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
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NTP067N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFE Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V Power Dissipation (Max): 266W (Tc) Vgs(th) (Max) @ Id: 4V @ 3.9mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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NTP067N65S3H | onsemi |
MOSFETs SUPERFET3 FAST 67MOHM TO-220 |
auf Bestellung 790 Stücke: Lieferzeit 10-14 Tag (e) |
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NVH4L027N65S3F | onsemi |
Description: SF3 FRFET AUTO 27MOHM TO-247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V Power Dissipation (Max): 595W (Tc) Vgs(th) (Max) @ Id: 5V @ 3mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7780 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7964 Stücke: Lieferzeit 10-14 Tag (e) |
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NVH4L027N65S3F | onsemi |
MOSFETs SF3 FRFET AUTO 27MOHM TO-247-4L |
auf Bestellung 430 Stücke: Lieferzeit 10-14 Tag (e) |
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NVHL027N65S3F | onsemi |
Description: MOSFET N-CH 650V 75A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V Power Dissipation (Max): 595W (Tc) Vgs(th) (Max) @ Id: 5V @ 3mA Supplier Device Package: TO-247-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7780 pF @ 400 V Qualification: AEC-Q101 |
auf Bestellung 405 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG47N65E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 650V 47A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 24A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5682 pF @ 100 V |
auf Bestellung 498 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHJ7N65E-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 650V 7.9A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc) Rds On (Max) @ Id, Vgs: 598mOhm @ 3.5A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V |
auf Bestellung 2300 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHJ7N65E-T1-GE3 | Vishay / Siliconix |
MOSFETs 650V Vds 30V Vgs PowerPAK SO-8L |
auf Bestellung 2477 Stücke: Lieferzeit 10-14 Tag (e) |
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SPI07N65C3XKSA1 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 350µA Supplier Device Package: PG-TO262-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V |
auf Bestellung 23000 Stücke: Lieferzeit 10-14 Tag (e) |
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SPW47N65C3 | Infineon Technologies |
MOSFETs N-Ch 650V 47A TO247-3 CoolMOS C3 |
auf Bestellung 260 Stücke: Lieferzeit 10-14 Tag (e) |
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STB57N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 42A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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STB57N65M5 | STMicroelectronics |
MOSFETs N-Ch 650V 0.056 Ohm 42 A MDmesh M5 |
auf Bestellung 810 Stücke: Lieferzeit 10-14 Tag (e) |
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STB57N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 42A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V |
auf Bestellung 4824 Stücke: Lieferzeit 10-14 Tag (e) |
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STD7N65M2 | STMicroelectronics |
MOSFETs N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a DPAK package |
auf Bestellung 916 Stücke: Lieferzeit 10-14 Tag (e) |
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STD7N65M6 | STMicroelectronics | MOSFETs N-channel 650 V, 0.91 Ohm typ 5 A MDmesh M6 Power MOSFET |
auf Bestellung 395 Stücke: Lieferzeit 10-14 Tag (e) |
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STF57N65M5 | STMicroelectronics |
MOSFETs N-Ch 650V 0.056 Ohm 42 A MDmesh M5 |
auf Bestellung 1372 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOTF7N65 Produktcode: 153855
zu Favoriten hinzufügen
Lieblingsprodukt
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Hersteller: A&O
Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Drain-Source-Spannung Uds, V: 650 В
Drain-Strom Idd, A: 7 A
Durchlasswiderstand Rds(on), Ohm: 1,56 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 887/19
Montage: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Drain-Source-Spannung Uds, V: 650 В
Drain-Strom Idd, A: 7 A
Durchlasswiderstand Rds(on), Ohm: 1,56 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 887/19
Montage: THT
auf Bestellung: 30 St.
- 30 St. - Lieferzeit 21-28 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1.57 EUR |
| 10+ | 1.4 EUR |
| 7N65 |
|
Hersteller: GOODWORK
Description: 650V 7A 1.18@10V TO-252
Description: 650V 7A 1.18@10V TO-252
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.33 EUR |
| 7N65F |
|
Hersteller: EVVO
Description: MOSFET N-CH 650V 7A TO220F
Description: MOSFET N-CH 650V 7A TO220F
auf Bestellung 293 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.44 EUR |
| 10+ | 2.86 EUR |
| 50+ | 2.17 EUR |
| 100+ | 1.94 EUR |
| 7N65F |
|
auf Bestellung 1966 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.76 EUR |
| 12+ | 1.75 EUR |
| 50+ | 1.3 EUR |
| 100+ | 1.15 EUR |
| 500+ | 0.9 EUR |
| 7N65F |
|
Hersteller: GOODWORK
Description: 650V 7A 1.3@10V ITO-220AB-3
Description: 650V 7A 1.3@10V ITO-220AB-3
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 52+ | 0.4 EUR |
| 7N65L |
|
Hersteller: UMW
Description: MOSFET N-CH 650V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Description: MOSFET N-CH 650V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 2496 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.23 EUR |
| 16+ | 1.38 EUR |
| 50+ | 1.02 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.7 EUR |
| AOD7N65 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Description: MOSFET N-CH 650V 7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
auf Bestellung 2799 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.47 EUR |
| 10+ | 2.21 EUR |
| 50+ | 1.65 EUR |
| 100+ | 1.49 EUR |
| 500+ | 1.17 EUR |
| AOT7N65 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.5A
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.56Ω
Mounting: THT
Gate charge: 19nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.5A
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.56Ω
Mounting: THT
Gate charge: 19nC
Kind of channel: enhancement
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 66+ | 1.3 EUR |
| 74+ | 1.15 EUR |
| 84+ | 1.02 EUR |
| 100+ | 0.93 EUR |
| 250+ | 0.87 EUR |
| AOT7N65 |
|
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 650V; 30V; 1,56Ohm; 7A; 192W; -55°C ~ 150°C; AOT7N65 TAOT7n65
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 650V; 30V; 1,56Ohm; 7A; 192W; -55°C ~ 150°C; AOT7N65 TAOT7n65
Anzahl je Verpackung: 10 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 2.51 EUR |
| AOTF7N65 |
|
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 650V; 30V; 1,56Ohm; 7A; 38,5W; -55°C ~ 150°C; AOTF7N65 TAOTF7n65
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 650V; 30V; 1,56Ohm; 7A; 38,5W; -55°C ~ 150°C; AOTF7N65 TAOTF7n65
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 2.51 EUR |
| BXP7N65CF |
|
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 351 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 87+ | 0.99 EUR |
| 111+ | 0.76 EUR |
| 138+ | 0.62 EUR |
| 164+ | 0.52 EUR |
| 250+ | 0.46 EUR |
| BXP7N65D |
|
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 71+ | 1.21 EUR |
| 103+ | 0.83 EUR |
| 127+ | 0.67 EUR |
| 151+ | 0.56 EUR |
| 250+ | 0.51 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.4 EUR |
| BXP7N65P |
|
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 663 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 65+ | 1.33 EUR |
| 94+ | 0.9 EUR |
| 105+ | 0.81 EUR |
| 125+ | 0.68 EUR |
| 250+ | 0.62 EUR |
| 500+ | 0.54 EUR |
| DI5A7N65D1K-AQ |
|
Hersteller: Diotec Semiconductor
MOSFETs MOSFET, DPAK, 650V, 5.7A, 150C, N, AEC-Q101
MOSFETs MOSFET, DPAK, 650V, 5.7A, 150C, N, AEC-Q101
auf Bestellung 2383 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.03 EUR |
| 10+ | 4.71 EUR |
| 100+ | 2.83 EUR |
| 500+ | 2.78 EUR |
| 1000+ | 2.75 EUR |
| 2500+ | 2.39 EUR |
| 5000+ | 2.26 EUR |
| DI5A7N65D1K-AQ |
|
Hersteller: Diotec Semiconductor
Description: MOSFET N-CH 650V 5.7A TO-252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 325 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 5.7A TO-252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.96 EUR |
| 10+ | 3.2 EUR |
| 50+ | 2.44 EUR |
| 100+ | 2.19 EUR |
| 500+ | 1.76 EUR |
| DMG7N65SCT |
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 501V-650V
MOSFETs MOSFET BVDSS: 501V-650V
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.5 EUR |
| 10+ | 2.24 EUR |
| 100+ | 1.48 EUR |
| 500+ | 1.21 EUR |
| 1000+ | 1.06 EUR |
| 2500+ | 0.98 EUR |
| 5000+ | 0.96 EUR |
| DMG7N65SCTI |
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 501V-650V
MOSFETs MOSFET BVDSS: 501V-650V
auf Bestellung 325 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.39 EUR |
| 10+ | 2.14 EUR |
| 100+ | 1.43 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 1.02 EUR |
| 2500+ | 0.94 EUR |
| 5000+ | 0.93 EUR |
| FCH077N65F-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 54A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7162 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 54A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7162 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2996 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.82 EUR |
| 30+ | 13.15 EUR |
| 60+ | 12.11 EUR |
| 120+ | 11.25 EUR |
| 510+ | 11.03 EUR |
| FCH077N65F-F085 |
|
Hersteller: onsemi
MOSFETs 650V N-Channel SuperFET II MOSFET
MOSFETs 650V N-Channel SuperFET II MOSFET
auf Bestellung 888 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.92 EUR |
| 10+ | 11.3 EUR |
| FCH077N65F-F085 |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 650V 54A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7162 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 54A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7162 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 148 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 13.83 EUR |
| FCH077N65F-F155 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 54A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7109 pF @ 100 V
Description: MOSFET N-CH 650V 54A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7109 pF @ 100 V
auf Bestellung 467 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.34 EUR |
| 30+ | 12.17 EUR |
| 60+ | 11.2 EUR |
| 120+ | 10.38 EUR |
| FCH077N65F-F155 |
|
Hersteller: onsemi
MOSFETs SuperFET2 650V, 77 mOhm, FRFET
MOSFETs SuperFET2 650V, 77 mOhm, FRFET
auf Bestellung 1292 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 20.63 EUR |
| 10+ | 12.35 EUR |
| 120+ | 12.13 EUR |
| 1020+ | 11.3 EUR |
| FCP067N65S3 |
Hersteller: onsemi
MOSFETs 650V 44A N-Channel SuperFET MOSFET
MOSFETs 650V 44A N-Channel SuperFET MOSFET
auf Bestellung 1532 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.01 EUR |
| 10+ | 9.29 EUR |
| 100+ | 8.52 EUR |
| FCPF067N65S3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 44A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 22A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
Description: MOSFET N-CH 650V 44A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 22A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
auf Bestellung 862 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.33 EUR |
| 10+ | 10.46 EUR |
| 50+ | 8.38 EUR |
| 100+ | 7.71 EUR |
| 500+ | 6.94 EUR |
| FCPF067N65S3 |
|
Hersteller: onsemi
MOSFETs SuperFET3 650V 67 mOhm
MOSFETs SuperFET3 650V 67 mOhm
auf Bestellung 4457 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.72 EUR |
| 10+ | 8.51 EUR |
| FQB7N65CTM |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 650V 7A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 173W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V
Description: MOSFET N-CH 650V 7A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 173W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V
auf Bestellung 7686 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 170+ | 3.22 EUR |
| FQP7N65C |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 650V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V
Description: MOSFET N-CH 650V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V
auf Bestellung 25372 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 252+ | 2.18 EUR |
| FQPF7N65CYDTU |
|
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, N
Description: POWER FIELD-EFFECT TRANSISTOR, N
auf Bestellung 1572 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 301+ | 1.83 EUR |
| MDD7N65D |
|
Hersteller: MDD
Description: MOSFET N 650V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
Description: MOSFET N 650V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
auf Bestellung 73876 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.5 EUR |
| MOT7N65AC |
|
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 7A 1.12 To251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 650V 7A 1.12 To251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.01 EUR |
| 13+ | 1.67 EUR |
| 100+ | 1 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.6 EUR |
| 4200+ | 0.5 EUR |
| MOT7N65AD |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 7A 1.12 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 650V 7A 1.12 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.99 EUR |
| 13+ | 1.67 EUR |
| 100+ | 1 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.6 EUR |
| 2500+ | 0.5 EUR |
| MOT7N65AF |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 7A 1.12 To220F
Description: MOSFET N-CH 650V 7A 1.12 To220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.25 EUR |
| 11+ | 1.95 EUR |
| 100+ | 1.17 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.69 EUR |
| MOT7N65F |
|
Hersteller: MOT
TRANSISTOR Equivalent: MAGNACHIP MDF7N65BTH; MOT7N65F TO-220F T7N65F MOT
Anzahl je Verpackung: 50 Stücke
TRANSISTOR Equivalent: MAGNACHIP MDF7N65BTH; MOT7N65F TO-220F T7N65F MOT
Anzahl je Verpackung: 50 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 1.69 EUR |
| NTH027N65S3F-F155 |
|
Hersteller: onsemi
MOSFETs SF3 FRFET 650V 27MOHM
MOSFETs SF3 FRFET 650V 27MOHM
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 47.5 EUR |
| 10+ | 38.28 EUR |
| 120+ | 32.49 EUR |
| NTH4L027N65S3F |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 75A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-4L
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 400 V
Description: MOSFET N-CH 650V 75A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-4L
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 400 V
auf Bestellung 395 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 46.49 EUR |
| 10+ | 33.71 EUR |
| 50+ | 28.68 EUR |
| NTH4L027N65S3F |
|
Hersteller: onsemi
MOSFETs FRFET 650V 75A 27.4 mOhm
MOSFETs FRFET 650V 75A 27.4 mOhm
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 44.46 EUR |
| 10+ | 32.25 EUR |
| 120+ | 30.83 EUR |
| NTH4L067N65S3H |
|
Hersteller: onsemi
MOSFETs SUPERFET3 FAST 67MOHM TO-247-4
MOSFETs SUPERFET3 FAST 67MOHM TO-247-4
auf Bestellung 435 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.91 EUR |
| 10+ | 14.43 EUR |
| 120+ | 11.54 EUR |
| 510+ | 11.27 EUR |
| NTH4LN067N65S3H |
|
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Supplier Device Package: TO-247-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Supplier Device Package: TO-247-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
auf Bestellung 1535 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.85 EUR |
| 30+ | 11.2 EUR |
| 60+ | 10.29 EUR |
| 120+ | 9.52 EUR |
| 510+ | 9.1 EUR |
| NTH4LN067N65S3H |
|
Hersteller: onsemi
MOSFETs SUPERFET3 FAST 67MOHM TO-247-4
MOSFETs SUPERFET3 FAST 67MOHM TO-247-4
auf Bestellung 371 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.98 EUR |
| 10+ | 10.53 EUR |
| 120+ | 9.32 EUR |
| NTHL027N65S3HF |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 400 V
Description: MOSFET N-CH 650V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 400 V
auf Bestellung 1394 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 41.66 EUR |
| 30+ | 26.55 EUR |
| 60+ | 25.34 EUR |
| NTHL027N65S3HF |
|
Hersteller: onsemi
MOSFETs FRFET 650V 75A 27.4mOhm
MOSFETs FRFET 650V 75A 27.4mOhm
auf Bestellung 1256 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 40.76 EUR |
| 10+ | 26.93 EUR |
| 120+ | 25.93 EUR |
| NTHL067N65S3H |
|
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
auf Bestellung 371 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.96 EUR |
| 30+ | 11.88 EUR |
| 60+ | 10.91 EUR |
| 120+ | 10.09 EUR |
| NTHL067N65S3H |
|
Hersteller: onsemi
MOSFETs SUPERFET3 FAST 67MOHM TO-247-3
MOSFETs SUPERFET3 FAST 67MOHM TO-247-3
auf Bestellung 59 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 19.1 EUR |
| 10+ | 11.38 EUR |
| 120+ | 10.22 EUR |
| NTP067N65S3H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 266W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 266W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 266W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 266W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 9.7 EUR |
| 10+ | 8.52 EUR |
| 12+ | 7.57 EUR |
| 20+ | 7.32 EUR |
| NTP067N65S3H |
|
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.12 EUR |
| 10+ | 11.04 EUR |
| 50+ | 8.87 EUR |
| 100+ | 8.16 EUR |
| 500+ | 7.43 EUR |
| NTP067N65S3H |
|
Hersteller: onsemi
MOSFETs SUPERFET3 FAST 67MOHM TO-220
MOSFETs SUPERFET3 FAST 67MOHM TO-220
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.8 EUR |
| 10+ | 12.17 EUR |
| 100+ | 10.01 EUR |
| 500+ | 8.95 EUR |
| 1000+ | 8.35 EUR |
| NVH4L027N65S3F |
|
Hersteller: onsemi
Description: SF3 FRFET AUTO 27MOHM TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7780 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: SF3 FRFET AUTO 27MOHM TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7780 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7964 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 38.77 EUR |
| 30+ | 24.55 EUR |
| 60+ | 23.13 EUR |
| NVH4L027N65S3F |
|
Hersteller: onsemi
MOSFETs SF3 FRFET AUTO 27MOHM TO-247-4L
MOSFETs SF3 FRFET AUTO 27MOHM TO-247-4L
auf Bestellung 430 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 39.32 EUR |
| 10+ | 27.48 EUR |
| 120+ | 26.37 EUR |
| NVHL027N65S3F |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7780 pF @ 400 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7780 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 405 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 40.48 EUR |
| 30+ | 25.61 EUR |
| 60+ | 24.06 EUR |
| 120+ | 22.71 EUR |
| SIHG47N65E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 24A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5682 pF @ 100 V
Description: MOSFET N-CH 650V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 24A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5682 pF @ 100 V
auf Bestellung 498 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.83 EUR |
| 10+ | 12.89 EUR |
| 50+ | 10.35 EUR |
| 100+ | 9.53 EUR |
| SIHJ7N65E-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 7.9A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
Rds On (Max) @ Id, Vgs: 598mOhm @ 3.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Description: MOSFET N-CH 650V 7.9A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
Rds On (Max) @ Id, Vgs: 598mOhm @ 3.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
auf Bestellung 2300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.43 EUR |
| 10+ | 4.19 EUR |
| 50+ | 3.22 EUR |
| 100+ | 2.9 EUR |
| 500+ | 2.36 EUR |
| SIHJ7N65E-T1-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 650V Vds 30V Vgs PowerPAK SO-8L
MOSFETs 650V Vds 30V Vgs PowerPAK SO-8L
auf Bestellung 2477 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.33 EUR |
| 10+ | 3.17 EUR |
| 100+ | 2.87 EUR |
| 500+ | 2.32 EUR |
| 1000+ | 2.31 EUR |
| 3000+ | 2.23 EUR |
| SPI07N65C3XKSA1 |
|
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
auf Bestellung 23000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 229+ | 2.4 EUR |
| SPW47N65C3 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 650V 47A TO247-3 CoolMOS C3
MOSFETs N-Ch 650V 47A TO247-3 CoolMOS C3
auf Bestellung 260 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.04 EUR |
| 10+ | 18.47 EUR |
| 100+ | 14.91 EUR |
| 480+ | 14.89 EUR |
| STB57N65M5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 9.52 EUR |
| STB57N65M5 |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 650V 0.056 Ohm 42 A MDmesh M5
MOSFETs N-Ch 650V 0.056 Ohm 42 A MDmesh M5
auf Bestellung 810 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.17 EUR |
| 10+ | 14.64 EUR |
| 100+ | 11.47 EUR |
| 1000+ | 10.85 EUR |
| STB57N65M5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
auf Bestellung 4824 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.52 EUR |
| 10+ | 14.88 EUR |
| 50+ | 12.04 EUR |
| 100+ | 11.65 EUR |
| STD7N65M2 |
|
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a DPAK package
MOSFETs N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a DPAK package
auf Bestellung 916 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.81 EUR |
| 10+ | 2.43 EUR |
| 100+ | 1.65 EUR |
| 500+ | 1.34 EUR |
| 1000+ | 1.19 EUR |
| 2500+ | 1.12 EUR |
| 5000+ | 1.09 EUR |
| STD7N65M6 |
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.91 Ohm typ 5 A MDmesh M6 Power MOSFET
MOSFETs N-channel 650 V, 0.91 Ohm typ 5 A MDmesh M6 Power MOSFET
auf Bestellung 395 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.49 EUR |
| 10+ | 2.89 EUR |
| 100+ | 1.96 EUR |
| 500+ | 1.65 EUR |
| 1000+ | 1.54 EUR |
| 2500+ | 1.32 EUR |
| STF57N65M5 |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 650V 0.056 Ohm 42 A MDmesh M5
MOSFETs N-Ch 650V 0.056 Ohm 42 A MDmesh M5
auf Bestellung 1372 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 19.67 EUR |
| 10+ | 12.84 EUR |
| 100+ | 11.39 EUR |
| 500+ | 10.12 EUR |
| 1000+ | 9.59 EUR |
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