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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SIHB055N60EF-GE3 | Vishay Semiconductors | MOSFET N-CHANNEL 600V |
auf Bestellung 1487 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHB065N60E-GE3 | Vishay / Siliconix | MOSFET 650V Vds; 30V Vgs D2PAK (TO-263) |
auf Bestellung 12082 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHB065N60E-T1-GE3 | Vishay | MOSFET N-CH 650V TO263 E SERIES TECH |
auf Bestellung 1600 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHB085N60EF-GE3 | Vishay / Siliconix | MOSFET 600Vds 30V Vgs TO-263 |
auf Bestellung 994 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHB105N60EF-GE3 | Vishay / Siliconix | MOSFET EF Series Pwr MOSFET w/Fast Body Diode |
auf Bestellung 8150 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHB125N60EF-GE3 | Vishay Semiconductors | MOSFET 600V N-CHANNEL |
auf Bestellung 827 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHB15N60E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 15A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
auf Bestellung 1347 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHB15N60E-GE3 | Vishay / Siliconix | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
auf Bestellung 2550 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHF065N60E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 40A TO220 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V |
auf Bestellung 943 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHF15N60E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 15A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
auf Bestellung 782 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG065N60E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 40A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V |
auf Bestellung 630 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG065N60E-GE3 | Vishay Semiconductors | MOSFET 650V Vds; 30V Vgs TO-247AC |
auf Bestellung 3090 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHG085N60EF-GE3 | Vishay / Siliconix | MOSFET 600Vds 30V Vgs TO-247AC |
auf Bestellung 450 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHG105N60EF-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 29A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V |
auf Bestellung 447 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG105N60EF-GE3 | Vishay / Siliconix | MOSFET EF Series Pwr MOSFET w/Fast Body Diode |
auf Bestellung 3238 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHG155N60EF-GE3 | Vishay / Siliconix | MOSFET EF Series Power MOSFET With Fast Body Diode TO-247AC, 157 mohm a. 10V |
auf Bestellung 839 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHG15N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 228 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHH105N60EF-T1GE3 | Vishay Semiconductors | MOSFET 600volts 26amp |
auf Bestellung 5460 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHH155N60EF-T1GE3 | Vishay / Siliconix | MOSFET EF Series Power MOSFET With Fast Body Diode PowerPAK 8x8, 155 mohm a. 10V |
auf Bestellung 6000 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHK045N60E-T1-GE3 | Vishay Semiconductors | MOSFET N-CHANNEL 600V |
auf Bestellung 2817 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHK045N60EF-T1GE3 | Vishay Semiconductors | MOSFET E SERIES POWER MOSFET |
auf Bestellung 4808 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHK055N60E-T1-GE3 | Vishay Semiconductors | MOSFET N-CHANNEL 600V |
auf Bestellung 2410 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHK055N60EF-T1GE3 | Vishay | MOSFET E SERIES PWR MOSFET 10V |
auf Bestellung 577 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHK065N60E-T1-GE3 | Vishay Semiconductors | MOSFET N-CH 600V |
auf Bestellung 3750 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHK075N60E-T1-GE3 | Vishay Semiconductors | MOSFET N-CH 600V |
auf Bestellung 3825 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHK105N60EF-T1GE3 | Vishay Semiconductors | MOSFET EF SERIES PWR MOSFET |
auf Bestellung 5625 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHK125N60E-T1-GE3 | Vishay Semiconductors | MOSFET N-CHANNEL 600V |
auf Bestellung 3976 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHK155N60E-T1-GE3 | Vishay / Siliconix | MOSFET E Series Power MOSFET PowerPAK 10 x 12, 155 mohm a. 10V |
auf Bestellung 3980 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHP065N60E-BE3 | Vishay Siliconix |
Description: N-CHANNEL 600V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V |
auf Bestellung 1589 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP065N60E-BE3 | Vishay / Siliconix | MOSFET N-CHANNEL 600V |
auf Bestellung 4418 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHP065N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 25A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 25A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 485 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHP065N60E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 40A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V |
auf Bestellung 935 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP065N60E-GE3 | Vishay | E Series Power MOSFET |
auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHP065N60E-GE3 | Vishay / Siliconix | MOSFET 600V Vds 30V Vgs TO-220AB |
auf Bestellung 1801 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHP105N60EF-GE3 | Vishay Semiconductors | MOSFET N-CHANNEL 600V |
auf Bestellung 2024 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHP125N60EF-GE3 | Vishay Semiconductors | MOSFET N-CHANNEL 600V |
auf Bestellung 761 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHP155N60EF-GE3 | Vishay / Siliconix | MOSFET EF Series Power MOSFET With Fast Body Diode TO-220AB, 157 mohm a. 10V |
auf Bestellung 1995 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHP15N60E-E3 | Vishay Semiconductors | MOSFET 600V Vds 30V Vgs TO-220AB |
auf Bestellung 2832 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHP15N60E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 15A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
auf Bestellung 16563 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP25N60EFL-BE3 | Vishay / Siliconix | MOSFET N-CHANNEL 600V |
auf Bestellung 1768 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHP35N60EF-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 32A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V |
auf Bestellung 738 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP35N60EF-GE3 | Vishay / Siliconix | MOSFET 600V Vds 30V Vgs TO-220AB |
auf Bestellung 1003 Stücke: Lieferzeit 14-28 Tag (e) |
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SPA15N60C3 | Infineon Technologies | MOSFET N-Ch 600V 15A TO220FP-3 CoolMOS C3 |
auf Bestellung 810 Stücke: Lieferzeit 14-28 Tag (e) |
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SPA15N60C3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 9.4A Pulsed drain current: 45A Power dissipation: 34W Case: PG-TO220 FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of channel: enhanced |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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SPA15N60C3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 9.4A Pulsed drain current: 45A Power dissipation: 34W Case: PG-TO220 FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 34 Stücke: Lieferzeit 7-14 Tag (e) |
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SPA15N60C3XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 15A TO220-FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 675µA Supplier Device Package: PG-TO220-3-31 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 256 Stücke: Lieferzeit 10-14 Tag (e) |
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SPA15N60C3XKSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 830 Stücke: Lieferzeit 14-21 Tag (e) |
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SPHWH1L5N603XEQ5A2 | Samsung Semiconductor, Inc. |
Description: LED LH508A+ COOL WHT 5700K SMD Packaging: Tape & Reel (TR) Package / Case: 2020 (5050 Metric) Color: White, Cool Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm) Mounting Type: Surface Mount Voltage - Forward (Vf) (Typ): 24.5V Current - Test: 160mA Viewing Angle: 120° Current - Max: 220mA Supplier Device Package: SMD Height - Seated (Max): 0.031" (0.80mm) CCT (K): 5700K 5-Step MacAdam Ellipse CRI (Color Rendering Index): 70 Part Status: Active |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SPHWH1L5N603XEQ5A2 | Samsung Semiconductor, Inc. |
Description: LED LH508A+ COOL WHT 5700K SMD Packaging: Cut Tape (CT) Package / Case: 2020 (5050 Metric) Color: White, Cool Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm) Mounting Type: Surface Mount Voltage - Forward (Vf) (Typ): 24.5V Current - Test: 160mA Viewing Angle: 120° Current - Max: 220mA Supplier Device Package: SMD Height - Seated (Max): 0.031" (0.80mm) CCT (K): 5700K 5-Step MacAdam Ellipse CRI (Color Rendering Index): 70 Part Status: Active |
auf Bestellung 3960 Stücke: Lieferzeit 10-14 Tag (e) |
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SPHWH1L5N603XER5A2 | Samsung Semiconductor, Inc. |
Description: LED LH508A+ COOL WHT 5000K SMD Packaging: Tape & Reel (TR) Package / Case: 2020 (5050 Metric) Color: White, Cool Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm) Mounting Type: Surface Mount Voltage - Forward (Vf) (Typ): 24.5V Current - Test: 160mA Viewing Angle: 120° Current - Max: 220mA Supplier Device Package: SMD Height - Seated (Max): 0.031" (0.80mm) CCT (K): 5000K 5-Step MacAdam Ellipse CRI (Color Rendering Index): 70 Part Status: Active |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SPHWH1L5N603XER5A2 | Samsung Semiconductor, Inc. |
Description: LED LH508A+ COOL WHT 5000K SMD Packaging: Cut Tape (CT) Package / Case: 2020 (5050 Metric) Color: White, Cool Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm) Mounting Type: Surface Mount Voltage - Forward (Vf) (Typ): 24.5V Current - Test: 160mA Viewing Angle: 120° Current - Max: 220mA Supplier Device Package: SMD Height - Seated (Max): 0.031" (0.80mm) CCT (K): 5000K 5-Step MacAdam Ellipse CRI (Color Rendering Index): 70 Part Status: Active |
auf Bestellung 3925 Stücke: Lieferzeit 10-14 Tag (e) |
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SPHWH1L5N603XET5A2 | Samsung Semiconductor, Inc. |
Description: LED LH508A+ NEUT WHT 4000K SMD Packaging: Cut Tape (CT) Package / Case: 2020 (5050 Metric) Color: White, Neutral Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm) Mounting Type: Surface Mount Voltage - Forward (Vf) (Typ): 24.5V Current - Test: 160mA Viewing Angle: 120° Current - Max: 220mA Supplier Device Package: SMD Height - Seated (Max): 0.031" (0.80mm) CCT (K): 4000K 5-Step MacAdam Ellipse CRI (Color Rendering Index): 70 Part Status: Active |
auf Bestellung 3937 Stücke: Lieferzeit 10-14 Tag (e) |
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SPHWH1L5N603XET5A2 | Samsung Semiconductor, Inc. |
Description: LED LH508A+ NEUT WHT 4000K SMD Packaging: Tape & Reel (TR) Package / Case: 2020 (5050 Metric) Color: White, Neutral Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm) Mounting Type: Surface Mount Voltage - Forward (Vf) (Typ): 24.5V Current - Test: 160mA Viewing Angle: 120° Current - Max: 220mA Supplier Device Package: SMD Height - Seated (Max): 0.031" (0.80mm) CCT (K): 4000K 5-Step MacAdam Ellipse CRI (Color Rendering Index): 70 Part Status: Active |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SPHWH1L5N603YEQ5A2 | Samsung Semiconductor, Inc. |
Description: LED LH502C COOL WHITE 5700K SMD Packaging: Cut Tape (CT) Package / Case: 2020 (5050 Metric) Color: White, Cool Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm) Mounting Type: Surface Mount Voltage - Forward (Vf) (Typ): 6.1V Current - Test: 640mA Viewing Angle: 120° Current - Max: 880mA Supplier Device Package: SMD Height - Seated (Max): 0.031" (0.80mm) CCT (K): 5700K 5-Step MacAdam Ellipse CRI (Color Rendering Index): 70 Part Status: Active |
auf Bestellung 5520 Stücke: Lieferzeit 10-14 Tag (e) |
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SPHWH1L5N603YEQ5A2 | Samsung Semiconductor, Inc. |
Description: LED LH502C COOL WHITE 5700K SMD Packaging: Tape & Reel (TR) Package / Case: 2020 (5050 Metric) Color: White, Cool Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm) Mounting Type: Surface Mount Voltage - Forward (Vf) (Typ): 6.1V Current - Test: 640mA Viewing Angle: 120° Current - Max: 880mA Supplier Device Package: SMD Height - Seated (Max): 0.031" (0.80mm) CCT (K): 5700K 5-Step MacAdam Ellipse CRI (Color Rendering Index): 70 Part Status: Active |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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SPHWH1L5N603YER5A2 | Samsung Semiconductor | 5000KK 70CRI 5SDCM A2 Flux |
auf Bestellung 759 Stücke: Lieferzeit 14-21 Tag (e) |
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SPHWH1L5N603YET5A2 | Samsung Semiconductor, Inc. |
Description: LED LH502C NEUT WHT 4000K SMD Packaging: Cut Tape (CT) Package / Case: 2020 (5050 Metric) Color: White, Neutral Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm) Mounting Type: Surface Mount Voltage - Forward (Vf) (Typ): 6.1V Current - Test: 640mA Viewing Angle: 120° Current - Max: 880mA Supplier Device Package: SMD Height - Seated (Max): 0.031" (0.80mm) CCT (K): 4000K 5-Step MacAdam Ellipse CRI (Color Rendering Index): 70 Part Status: Active |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SPHWH1L5N603YEV5A2 | Samsung Semiconductor | 3000KK 70CRI 5SDCM A2 Flux |
auf Bestellung 1960 Stücke: Lieferzeit 14-21 Tag (e) |
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SPHWH1L5N605XER3A2 | Samsung Semiconductor, Inc. |
Description: LED LH508A+ COOL WHT 5000K SMD Packaging: Tape & Reel (TR) Package / Case: 2020 (5050 Metric) Color: White, Cool Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm) Mounting Type: Surface Mount Voltage - Forward (Vf) (Typ): 24.5V Current - Test: 160mA Viewing Angle: 120° Current - Max: 220mA Supplier Device Package: SMD Height - Seated (Max): 0.031" (0.80mm) CCT (K): 5000K 3-Step MacAdam Ellipse CRI (Color Rendering Index): 80 Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SPHWH1L5N605XER3A2 | Samsung Semiconductor, Inc. |
Description: LED LH508A+ COOL WHT 5000K SMD Packaging: Cut Tape (CT) Package / Case: 2020 (5050 Metric) Color: White, Cool Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm) Mounting Type: Surface Mount Voltage - Forward (Vf) (Typ): 24.5V Current - Test: 160mA Viewing Angle: 120° Current - Max: 220mA Supplier Device Package: SMD Height - Seated (Max): 0.031" (0.80mm) CCT (K): 5000K 3-Step MacAdam Ellipse CRI (Color Rendering Index): 80 Part Status: Active |
auf Bestellung 9750 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHB055N60EF-GE3 |
Hersteller: Vishay Semiconductors
MOSFET N-CHANNEL 600V
MOSFET N-CHANNEL 600V
auf Bestellung 1487 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 15 EUR |
10+ | 12.87 EUR |
25+ | 11.65 EUR |
100+ | 11.05 EUR |
1000+ | 10.4 EUR |
SIHB065N60E-GE3 |
Hersteller: Vishay / Siliconix
MOSFET 650V Vds; 30V Vgs D2PAK (TO-263)
MOSFET 650V Vds; 30V Vgs D2PAK (TO-263)
auf Bestellung 12082 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 15.76 EUR |
10+ | 13.44 EUR |
25+ | 12.01 EUR |
100+ | 10.71 EUR |
250+ | 10.43 EUR |
500+ | 9.2 EUR |
1000+ | 8.84 EUR |
SIHB065N60E-T1-GE3 |
Hersteller: Vishay
MOSFET N-CH 650V TO263 E SERIES TECH
MOSFET N-CH 650V TO263 E SERIES TECH
auf Bestellung 1600 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 18.38 EUR |
10+ | 15.76 EUR |
25+ | 14.3 EUR |
100+ | 13.13 EUR |
250+ | 12.35 EUR |
500+ | 11.57 EUR |
800+ | 9.93 EUR |
SIHB085N60EF-GE3 |
Hersteller: Vishay / Siliconix
MOSFET 600Vds 30V Vgs TO-263
MOSFET 600Vds 30V Vgs TO-263
auf Bestellung 994 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 13.99 EUR |
10+ | 11.73 EUR |
25+ | 11.08 EUR |
100+ | 9.49 EUR |
250+ | 8.97 EUR |
500+ | 8.45 EUR |
1000+ | 7.23 EUR |
SIHB105N60EF-GE3 |
Hersteller: Vishay / Siliconix
MOSFET EF Series Pwr MOSFET w/Fast Body Diode
MOSFET EF Series Pwr MOSFET w/Fast Body Diode
auf Bestellung 8150 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 7.46 EUR |
10+ | 6.97 EUR |
25+ | 6.24 EUR |
100+ | 5.54 EUR |
250+ | 5.38 EUR |
500+ | 5.07 EUR |
1000+ | 4.65 EUR |
SIHB125N60EF-GE3 |
Hersteller: Vishay Semiconductors
MOSFET 600V N-CHANNEL
MOSFET 600V N-CHANNEL
auf Bestellung 827 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 8.79 EUR |
10+ | 7.7 EUR |
25+ | 7.44 EUR |
100+ | 6.45 EUR |
250+ | 6.29 EUR |
500+ | 5.9 EUR |
1000+ | 5.33 EUR |
SIHB15N60E-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 15A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: MOSFET N-CH 600V 15A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 1347 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.95 EUR |
10+ | 4.15 EUR |
100+ | 3.36 EUR |
1000+ | 2.55 EUR |
SIHB15N60E-GE3 |
Hersteller: Vishay / Siliconix
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 2550 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 7.25 EUR |
10+ | 6.08 EUR |
25+ | 5.75 EUR |
100+ | 4.94 EUR |
250+ | 4.65 EUR |
500+ | 4.37 EUR |
1000+ | 3.64 EUR |
SIHF065N60E-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 40A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Description: MOSFET N-CH 600V 40A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
auf Bestellung 943 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.84 EUR |
50+ | 8.66 EUR |
100+ | 7.75 EUR |
SIHF15N60E-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 15A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: MOSFET N-CH 600V 15A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 782 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.89 EUR |
50+ | 3.88 EUR |
100+ | 3.33 EUR |
500+ | 2.96 EUR |
SIHG065N60E-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 40A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Description: MOSFET N-CH 600V 40A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
auf Bestellung 630 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 11.7 EUR |
25+ | 9.35 EUR |
100+ | 8.36 EUR |
500+ | 7.38 EUR |
SIHG065N60E-GE3 |
Hersteller: Vishay Semiconductors
MOSFET 650V Vds; 30V Vgs TO-247AC
MOSFET 650V Vds; 30V Vgs TO-247AC
auf Bestellung 3090 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 13.16 EUR |
10+ | 12.82 EUR |
25+ | 10.97 EUR |
100+ | 10.17 EUR |
250+ | 10.06 EUR |
500+ | 9.31 EUR |
SIHG085N60EF-GE3 |
Hersteller: Vishay / Siliconix
MOSFET 600Vds 30V Vgs TO-247AC
MOSFET 600Vds 30V Vgs TO-247AC
auf Bestellung 450 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 15.26 EUR |
10+ | 12.82 EUR |
25+ | 12.09 EUR |
100+ | 10.35 EUR |
250+ | 9.78 EUR |
500+ | 9.2 EUR |
1000+ | 7.88 EUR |
SIHG105N60EF-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
Description: MOSFET N-CH 600V 29A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
auf Bestellung 447 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.86 EUR |
10+ | 5.75 EUR |
100+ | 4.65 EUR |
SIHG105N60EF-GE3 |
Hersteller: Vishay / Siliconix
MOSFET EF Series Pwr MOSFET w/Fast Body Diode
MOSFET EF Series Pwr MOSFET w/Fast Body Diode
auf Bestellung 3238 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 8.42 EUR |
10+ | 7.38 EUR |
25+ | 7.12 EUR |
100+ | 6.19 EUR |
250+ | 6.03 EUR |
500+ | 5.67 EUR |
1000+ | 5.25 EUR |
SIHG155N60EF-GE3 |
Hersteller: Vishay / Siliconix
MOSFET EF Series Power MOSFET With Fast Body Diode TO-247AC, 157 mohm a. 10V
MOSFET EF Series Power MOSFET With Fast Body Diode TO-247AC, 157 mohm a. 10V
auf Bestellung 839 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 10.56 EUR |
10+ | 8.87 EUR |
25+ | 8.37 EUR |
100+ | 7.18 EUR |
250+ | 6.76 EUR |
500+ | 6.4 EUR |
1000+ | 5.46 EUR |
SIHG15N60E-GE3 |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 228 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 4.72 EUR |
17+ | 4.23 EUR |
23+ | 3.25 EUR |
24+ | 3.06 EUR |
SIHH105N60EF-T1GE3 |
Hersteller: Vishay Semiconductors
MOSFET 600volts 26amp
MOSFET 600volts 26amp
auf Bestellung 5460 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 15.96 EUR |
10+ | 13.42 EUR |
25+ | 13.13 EUR |
100+ | 10.87 EUR |
250+ | 10.53 EUR |
500+ | 9.65 EUR |
1000+ | 8.27 EUR |
SIHH155N60EF-T1GE3 |
Hersteller: Vishay / Siliconix
MOSFET EF Series Power MOSFET With Fast Body Diode PowerPAK 8x8, 155 mohm a. 10V
MOSFET EF Series Power MOSFET With Fast Body Diode PowerPAK 8x8, 155 mohm a. 10V
auf Bestellung 6000 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 12.61 EUR |
10+ | 10.58 EUR |
25+ | 9.98 EUR |
100+ | 8.55 EUR |
250+ | 8.09 EUR |
500+ | 7.62 EUR |
1000+ | 6.5 EUR |
SIHK045N60E-T1-GE3 |
Hersteller: Vishay Semiconductors
MOSFET N-CHANNEL 600V
MOSFET N-CHANNEL 600V
auf Bestellung 2817 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 23.19 EUR |
10+ | 19.86 EUR |
25+ | 18.04 EUR |
100+ | 16.56 EUR |
250+ | 16.51 EUR |
2000+ | 16.07 EUR |
SIHK045N60EF-T1GE3 |
Hersteller: Vishay Semiconductors
MOSFET E SERIES POWER MOSFET
MOSFET E SERIES POWER MOSFET
auf Bestellung 4808 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 24.36 EUR |
10+ | 20.88 EUR |
25+ | 18.93 EUR |
100+ | 17.5 EUR |
2000+ | 16.87 EUR |
SIHK055N60E-T1-GE3 |
Hersteller: Vishay Semiconductors
MOSFET N-CHANNEL 600V
MOSFET N-CHANNEL 600V
auf Bestellung 2410 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 19.63 EUR |
10+ | 16.82 EUR |
25+ | 15.26 EUR |
100+ | 14.01 EUR |
250+ | 13.21 EUR |
500+ | 12.38 EUR |
1000+ | 11.73 EUR |
SIHK055N60EF-T1GE3 |
Hersteller: Vishay
MOSFET E SERIES PWR MOSFET 10V
MOSFET E SERIES PWR MOSFET 10V
auf Bestellung 577 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 21.01 EUR |
10+ | 18.02 EUR |
25+ | 16.35 EUR |
100+ | 15.03 EUR |
250+ | 14.12 EUR |
500+ | 13.42 EUR |
2000+ | 11.39 EUR |
SIHK065N60E-T1-GE3 |
Hersteller: Vishay Semiconductors
MOSFET N-CH 600V
MOSFET N-CH 600V
auf Bestellung 3750 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 17.71 EUR |
10+ | 15.16 EUR |
25+ | 13.75 EUR |
100+ | 12.64 EUR |
250+ | 11.91 EUR |
500+ | 11.15 EUR |
1000+ | 10.56 EUR |
SIHK075N60E-T1-GE3 |
Hersteller: Vishay Semiconductors
MOSFET N-CH 600V
MOSFET N-CH 600V
auf Bestellung 3825 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 15.52 EUR |
10+ | 13.31 EUR |
25+ | 12.06 EUR |
100+ | 11.1 EUR |
250+ | 10.45 EUR |
500+ | 9.8 EUR |
1000+ | 9.28 EUR |
SIHK105N60EF-T1GE3 |
Hersteller: Vishay Semiconductors
MOSFET EF SERIES PWR MOSFET
MOSFET EF SERIES PWR MOSFET
auf Bestellung 5625 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 13.36 EUR |
10+ | 11.23 EUR |
25+ | 10.61 EUR |
100+ | 9.1 EUR |
250+ | 8.58 EUR |
500+ | 8.09 EUR |
1000+ | 7.49 EUR |
SIHK125N60E-T1-GE3 |
Hersteller: Vishay Semiconductors
MOSFET N-CHANNEL 600V
MOSFET N-CHANNEL 600V
auf Bestellung 3976 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 12.17 EUR |
10+ | 10.22 EUR |
25+ | 9.65 EUR |
100+ | 8.27 EUR |
250+ | 7.8 EUR |
500+ | 7.36 EUR |
1000+ | 6.71 EUR |
SIHK155N60E-T1-GE3 |
Hersteller: Vishay / Siliconix
MOSFET E Series Power MOSFET PowerPAK 10 x 12, 155 mohm a. 10V
MOSFET E Series Power MOSFET PowerPAK 10 x 12, 155 mohm a. 10V
auf Bestellung 3980 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 12.38 EUR |
10+ | 10.4 EUR |
25+ | 9.83 EUR |
100+ | 8.42 EUR |
250+ | 7.93 EUR |
500+ | 7.46 EUR |
1000+ | 6.4 EUR |
SIHP065N60E-BE3 |
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Description: N-CHANNEL 600V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
auf Bestellung 1589 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 11.51 EUR |
50+ | 9.19 EUR |
100+ | 8.22 EUR |
500+ | 7.25 EUR |
1000+ | 6.53 EUR |
SIHP065N60E-BE3 |
Hersteller: Vishay / Siliconix
MOSFET N-CHANNEL 600V
MOSFET N-CHANNEL 600V
auf Bestellung 4418 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 16.9 EUR |
10+ | 14.48 EUR |
25+ | 12.95 EUR |
100+ | 12.61 EUR |
1000+ | 11.93 EUR |
2000+ | 11.7 EUR |
SIHP065N60E-GE3 |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 25A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 25A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 485 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 11.1 EUR |
10+ | 7.21 EUR |
SIHP065N60E-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Description: MOSFET N-CH 600V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
auf Bestellung 935 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 11.51 EUR |
50+ | 9.19 EUR |
100+ | 8.22 EUR |
500+ | 7.25 EUR |
SIHP065N60E-GE3 |
Hersteller: Vishay
E Series Power MOSFET
E Series Power MOSFET
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)SIHP065N60E-GE3 |
Hersteller: Vishay / Siliconix
MOSFET 600V Vds 30V Vgs TO-220AB
MOSFET 600V Vds 30V Vgs TO-220AB
auf Bestellung 1801 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 16.87 EUR |
10+ | 14.48 EUR |
25+ | 11.78 EUR |
100+ | 10.89 EUR |
250+ | 10.76 EUR |
500+ | 10.01 EUR |
1000+ | 9.13 EUR |
SIHP105N60EF-GE3 |
Hersteller: Vishay Semiconductors
MOSFET N-CHANNEL 600V
MOSFET N-CHANNEL 600V
auf Bestellung 2024 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 12.48 EUR |
10+ | 10.48 EUR |
25+ | 9.88 EUR |
100+ | 8.48 EUR |
250+ | 8.01 EUR |
500+ | 7.54 EUR |
1000+ | 6.42 EUR |
SIHP125N60EF-GE3 |
Hersteller: Vishay Semiconductors
MOSFET N-CHANNEL 600V
MOSFET N-CHANNEL 600V
auf Bestellung 761 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 11.08 EUR |
10+ | 9.31 EUR |
25+ | 7.98 EUR |
100+ | 6.97 EUR |
250+ | 6.79 EUR |
500+ | 6.4 EUR |
1000+ | 5.85 EUR |
SIHP155N60EF-GE3 |
Hersteller: Vishay / Siliconix
MOSFET EF Series Power MOSFET With Fast Body Diode TO-220AB, 157 mohm a. 10V
MOSFET EF Series Power MOSFET With Fast Body Diode TO-220AB, 157 mohm a. 10V
auf Bestellung 1995 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 8.76 EUR |
10+ | 7.36 EUR |
25+ | 6.94 EUR |
100+ | 5.95 EUR |
250+ | 5.62 EUR |
500+ | 5.28 EUR |
1000+ | 4.52 EUR |
SIHP15N60E-E3 |
Hersteller: Vishay Semiconductors
MOSFET 600V Vds 30V Vgs TO-220AB
MOSFET 600V Vds 30V Vgs TO-220AB
auf Bestellung 2832 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 3.33 EUR |
SIHP15N60E-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: MOSFET N-CH 600V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 16563 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.27 EUR |
50+ | 2.6 EUR |
100+ | 2.23 EUR |
500+ | 2.18 EUR |
SIHP25N60EFL-BE3 |
Hersteller: Vishay / Siliconix
MOSFET N-CHANNEL 600V
MOSFET N-CHANNEL 600V
auf Bestellung 1768 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 11 EUR |
10+ | 9.36 EUR |
50+ | 7.93 EUR |
100+ | 7.31 EUR |
250+ | 7.12 EUR |
500+ | 6.99 EUR |
1000+ | 6.84 EUR |
SIHP35N60EF-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 32A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V
Description: MOSFET N-CH 600V 32A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V
auf Bestellung 738 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.96 EUR |
50+ | 7.91 EUR |
100+ | 6.78 EUR |
500+ | 6.02 EUR |
SIHP35N60EF-GE3 |
Hersteller: Vishay / Siliconix
MOSFET 600V Vds 30V Vgs TO-220AB
MOSFET 600V Vds 30V Vgs TO-220AB
auf Bestellung 1003 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 14.64 EUR |
10+ | 12.3 EUR |
25+ | 11.6 EUR |
100+ | 9.96 EUR |
250+ | 9.41 EUR |
500+ | 8.84 EUR |
1000+ | 7.51 EUR |
SPA15N60C3 |
Hersteller: Infineon Technologies
MOSFET N-Ch 600V 15A TO220FP-3 CoolMOS C3
MOSFET N-Ch 600V 15A TO220FP-3 CoolMOS C3
auf Bestellung 810 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 6.5 EUR |
10+ | 6.42 EUR |
25+ | 5.59 EUR |
100+ | 5.04 EUR |
250+ | 5.02 EUR |
500+ | 4.24 EUR |
SPA15N60C3XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhanced
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 5.36 EUR |
15+ | 4.82 EUR |
20+ | 3.69 EUR |
21+ | 3.49 EUR |
SPA15N60C3XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 5.36 EUR |
15+ | 4.82 EUR |
20+ | 3.69 EUR |
21+ | 3.49 EUR |
SPA15N60C3XKSA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 15A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 650V 15A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 256 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 5.93 EUR |
50+ | 4.7 EUR |
100+ | 4.03 EUR |
SPA15N60C3XKSA1 |
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 830 Stücke:
Lieferzeit 14-21 Tag (e)SPHWH1L5N603XEQ5A2 |
Hersteller: Samsung Semiconductor, Inc.
Description: LED LH508A+ COOL WHT 5700K SMD
Packaging: Tape & Reel (TR)
Package / Case: 2020 (5050 Metric)
Color: White, Cool
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 24.5V
Current - Test: 160mA
Viewing Angle: 120°
Current - Max: 220mA
Supplier Device Package: SMD
Height - Seated (Max): 0.031" (0.80mm)
CCT (K): 5700K 5-Step MacAdam Ellipse
CRI (Color Rendering Index): 70
Part Status: Active
Description: LED LH508A+ COOL WHT 5700K SMD
Packaging: Tape & Reel (TR)
Package / Case: 2020 (5050 Metric)
Color: White, Cool
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 24.5V
Current - Test: 160mA
Viewing Angle: 120°
Current - Max: 220mA
Supplier Device Package: SMD
Height - Seated (Max): 0.031" (0.80mm)
CCT (K): 5700K 5-Step MacAdam Ellipse
CRI (Color Rendering Index): 70
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.43 EUR |
SPHWH1L5N603XEQ5A2 |
Hersteller: Samsung Semiconductor, Inc.
Description: LED LH508A+ COOL WHT 5700K SMD
Packaging: Cut Tape (CT)
Package / Case: 2020 (5050 Metric)
Color: White, Cool
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 24.5V
Current - Test: 160mA
Viewing Angle: 120°
Current - Max: 220mA
Supplier Device Package: SMD
Height - Seated (Max): 0.031" (0.80mm)
CCT (K): 5700K 5-Step MacAdam Ellipse
CRI (Color Rendering Index): 70
Part Status: Active
Description: LED LH508A+ COOL WHT 5700K SMD
Packaging: Cut Tape (CT)
Package / Case: 2020 (5050 Metric)
Color: White, Cool
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 24.5V
Current - Test: 160mA
Viewing Angle: 120°
Current - Max: 220mA
Supplier Device Package: SMD
Height - Seated (Max): 0.031" (0.80mm)
CCT (K): 5700K 5-Step MacAdam Ellipse
CRI (Color Rendering Index): 70
Part Status: Active
auf Bestellung 3960 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.36 EUR |
20+ | 0.89 EUR |
100+ | 0.58 EUR |
1000+ | 0.46 EUR |
SPHWH1L5N603XER5A2 |
Hersteller: Samsung Semiconductor, Inc.
Description: LED LH508A+ COOL WHT 5000K SMD
Packaging: Tape & Reel (TR)
Package / Case: 2020 (5050 Metric)
Color: White, Cool
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 24.5V
Current - Test: 160mA
Viewing Angle: 120°
Current - Max: 220mA
Supplier Device Package: SMD
Height - Seated (Max): 0.031" (0.80mm)
CCT (K): 5000K 5-Step MacAdam Ellipse
CRI (Color Rendering Index): 70
Part Status: Active
Description: LED LH508A+ COOL WHT 5000K SMD
Packaging: Tape & Reel (TR)
Package / Case: 2020 (5050 Metric)
Color: White, Cool
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 24.5V
Current - Test: 160mA
Viewing Angle: 120°
Current - Max: 220mA
Supplier Device Package: SMD
Height - Seated (Max): 0.031" (0.80mm)
CCT (K): 5000K 5-Step MacAdam Ellipse
CRI (Color Rendering Index): 70
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.43 EUR |
SPHWH1L5N603XER5A2 |
Hersteller: Samsung Semiconductor, Inc.
Description: LED LH508A+ COOL WHT 5000K SMD
Packaging: Cut Tape (CT)
Package / Case: 2020 (5050 Metric)
Color: White, Cool
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 24.5V
Current - Test: 160mA
Viewing Angle: 120°
Current - Max: 220mA
Supplier Device Package: SMD
Height - Seated (Max): 0.031" (0.80mm)
CCT (K): 5000K 5-Step MacAdam Ellipse
CRI (Color Rendering Index): 70
Part Status: Active
Description: LED LH508A+ COOL WHT 5000K SMD
Packaging: Cut Tape (CT)
Package / Case: 2020 (5050 Metric)
Color: White, Cool
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 24.5V
Current - Test: 160mA
Viewing Angle: 120°
Current - Max: 220mA
Supplier Device Package: SMD
Height - Seated (Max): 0.031" (0.80mm)
CCT (K): 5000K 5-Step MacAdam Ellipse
CRI (Color Rendering Index): 70
Part Status: Active
auf Bestellung 3925 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.36 EUR |
20+ | 0.89 EUR |
100+ | 0.58 EUR |
1000+ | 0.46 EUR |
SPHWH1L5N603XET5A2 |
Hersteller: Samsung Semiconductor, Inc.
Description: LED LH508A+ NEUT WHT 4000K SMD
Packaging: Cut Tape (CT)
Package / Case: 2020 (5050 Metric)
Color: White, Neutral
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 24.5V
Current - Test: 160mA
Viewing Angle: 120°
Current - Max: 220mA
Supplier Device Package: SMD
Height - Seated (Max): 0.031" (0.80mm)
CCT (K): 4000K 5-Step MacAdam Ellipse
CRI (Color Rendering Index): 70
Part Status: Active
Description: LED LH508A+ NEUT WHT 4000K SMD
Packaging: Cut Tape (CT)
Package / Case: 2020 (5050 Metric)
Color: White, Neutral
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 24.5V
Current - Test: 160mA
Viewing Angle: 120°
Current - Max: 220mA
Supplier Device Package: SMD
Height - Seated (Max): 0.031" (0.80mm)
CCT (K): 4000K 5-Step MacAdam Ellipse
CRI (Color Rendering Index): 70
Part Status: Active
auf Bestellung 3937 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.36 EUR |
20+ | 0.89 EUR |
100+ | 0.58 EUR |
1000+ | 0.46 EUR |
SPHWH1L5N603XET5A2 |
Hersteller: Samsung Semiconductor, Inc.
Description: LED LH508A+ NEUT WHT 4000K SMD
Packaging: Tape & Reel (TR)
Package / Case: 2020 (5050 Metric)
Color: White, Neutral
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 24.5V
Current - Test: 160mA
Viewing Angle: 120°
Current - Max: 220mA
Supplier Device Package: SMD
Height - Seated (Max): 0.031" (0.80mm)
CCT (K): 4000K 5-Step MacAdam Ellipse
CRI (Color Rendering Index): 70
Part Status: Active
Description: LED LH508A+ NEUT WHT 4000K SMD
Packaging: Tape & Reel (TR)
Package / Case: 2020 (5050 Metric)
Color: White, Neutral
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 24.5V
Current - Test: 160mA
Viewing Angle: 120°
Current - Max: 220mA
Supplier Device Package: SMD
Height - Seated (Max): 0.031" (0.80mm)
CCT (K): 4000K 5-Step MacAdam Ellipse
CRI (Color Rendering Index): 70
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.43 EUR |
SPHWH1L5N603YEQ5A2 |
Hersteller: Samsung Semiconductor, Inc.
Description: LED LH502C COOL WHITE 5700K SMD
Packaging: Cut Tape (CT)
Package / Case: 2020 (5050 Metric)
Color: White, Cool
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 6.1V
Current - Test: 640mA
Viewing Angle: 120°
Current - Max: 880mA
Supplier Device Package: SMD
Height - Seated (Max): 0.031" (0.80mm)
CCT (K): 5700K 5-Step MacAdam Ellipse
CRI (Color Rendering Index): 70
Part Status: Active
Description: LED LH502C COOL WHITE 5700K SMD
Packaging: Cut Tape (CT)
Package / Case: 2020 (5050 Metric)
Color: White, Cool
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 6.1V
Current - Test: 640mA
Viewing Angle: 120°
Current - Max: 880mA
Supplier Device Package: SMD
Height - Seated (Max): 0.031" (0.80mm)
CCT (K): 5700K 5-Step MacAdam Ellipse
CRI (Color Rendering Index): 70
Part Status: Active
auf Bestellung 5520 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.34 EUR |
21+ | 0.87 EUR |
100+ | 0.57 EUR |
1000+ | 0.45 EUR |
SPHWH1L5N603YEQ5A2 |
Hersteller: Samsung Semiconductor, Inc.
Description: LED LH502C COOL WHITE 5700K SMD
Packaging: Tape & Reel (TR)
Package / Case: 2020 (5050 Metric)
Color: White, Cool
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 6.1V
Current - Test: 640mA
Viewing Angle: 120°
Current - Max: 880mA
Supplier Device Package: SMD
Height - Seated (Max): 0.031" (0.80mm)
CCT (K): 5700K 5-Step MacAdam Ellipse
CRI (Color Rendering Index): 70
Part Status: Active
Description: LED LH502C COOL WHITE 5700K SMD
Packaging: Tape & Reel (TR)
Package / Case: 2020 (5050 Metric)
Color: White, Cool
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 6.1V
Current - Test: 640mA
Viewing Angle: 120°
Current - Max: 880mA
Supplier Device Package: SMD
Height - Seated (Max): 0.031" (0.80mm)
CCT (K): 5700K 5-Step MacAdam Ellipse
CRI (Color Rendering Index): 70
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.42 EUR |
SPHWH1L5N603YER5A2 |
Hersteller: Samsung Semiconductor
5000KK 70CRI 5SDCM A2 Flux
5000KK 70CRI 5SDCM A2 Flux
auf Bestellung 759 Stücke:
Lieferzeit 14-21 Tag (e)SPHWH1L5N603YET5A2 |
Hersteller: Samsung Semiconductor, Inc.
Description: LED LH502C NEUT WHT 4000K SMD
Packaging: Cut Tape (CT)
Package / Case: 2020 (5050 Metric)
Color: White, Neutral
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 6.1V
Current - Test: 640mA
Viewing Angle: 120°
Current - Max: 880mA
Supplier Device Package: SMD
Height - Seated (Max): 0.031" (0.80mm)
CCT (K): 4000K 5-Step MacAdam Ellipse
CRI (Color Rendering Index): 70
Part Status: Active
Description: LED LH502C NEUT WHT 4000K SMD
Packaging: Cut Tape (CT)
Package / Case: 2020 (5050 Metric)
Color: White, Neutral
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 6.1V
Current - Test: 640mA
Viewing Angle: 120°
Current - Max: 880mA
Supplier Device Package: SMD
Height - Seated (Max): 0.031" (0.80mm)
CCT (K): 4000K 5-Step MacAdam Ellipse
CRI (Color Rendering Index): 70
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.34 EUR |
21+ | 0.87 EUR |
100+ | 0.57 EUR |
1000+ | 0.45 EUR |
SPHWH1L5N603YEV5A2 |
Hersteller: Samsung Semiconductor
3000KK 70CRI 5SDCM A2 Flux
3000KK 70CRI 5SDCM A2 Flux
auf Bestellung 1960 Stücke:
Lieferzeit 14-21 Tag (e)SPHWH1L5N605XER3A2 |
Hersteller: Samsung Semiconductor, Inc.
Description: LED LH508A+ COOL WHT 5000K SMD
Packaging: Tape & Reel (TR)
Package / Case: 2020 (5050 Metric)
Color: White, Cool
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 24.5V
Current - Test: 160mA
Viewing Angle: 120°
Current - Max: 220mA
Supplier Device Package: SMD
Height - Seated (Max): 0.031" (0.80mm)
CCT (K): 5000K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 80
Part Status: Active
Description: LED LH508A+ COOL WHT 5000K SMD
Packaging: Tape & Reel (TR)
Package / Case: 2020 (5050 Metric)
Color: White, Cool
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 24.5V
Current - Test: 160mA
Viewing Angle: 120°
Current - Max: 220mA
Supplier Device Package: SMD
Height - Seated (Max): 0.031" (0.80mm)
CCT (K): 5000K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 80
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.5 EUR |
6000+ | 0.49 EUR |
SPHWH1L5N605XER3A2 |
Hersteller: Samsung Semiconductor, Inc.
Description: LED LH508A+ COOL WHT 5000K SMD
Packaging: Cut Tape (CT)
Package / Case: 2020 (5050 Metric)
Color: White, Cool
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 24.5V
Current - Test: 160mA
Viewing Angle: 120°
Current - Max: 220mA
Supplier Device Package: SMD
Height - Seated (Max): 0.031" (0.80mm)
CCT (K): 5000K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 80
Part Status: Active
Description: LED LH508A+ COOL WHT 5000K SMD
Packaging: Cut Tape (CT)
Package / Case: 2020 (5050 Metric)
Color: White, Cool
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 24.5V
Current - Test: 160mA
Viewing Angle: 120°
Current - Max: 220mA
Supplier Device Package: SMD
Height - Seated (Max): 0.031" (0.80mm)
CCT (K): 5000K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 80
Part Status: Active
auf Bestellung 9750 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.6 EUR |
17+ | 1.04 EUR |
100+ | 0.68 EUR |
1000+ | 0.54 EUR |