Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (132311) > Seite 2131 nach 2206
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STP22NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 16A; Idm: 64A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 64A Gate charge: 44nC |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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STF18NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; 30W Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.2A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.285Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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STF10NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 32A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 32A Gate charge: 19nC |
auf Bestellung 128 Stücke: Lieferzeit 14-21 Tag (e) |
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STW48NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Power dissipation: 330W Case: TO247 Gate-source voltage: ±25V On-state resistance: 55mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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STD10NM60N | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 70W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.55Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2002 Stücke: Lieferzeit 14-21 Tag (e) |
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STF22NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 10A; 30W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) |
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STP11NM60 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 160W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 44A Gate charge: 30nC |
auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) |
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STW34NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 92mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 293 Stücke: Lieferzeit 14-21 Tag (e) |
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STP11NM60ND | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 6.3A; 90W Type of transistor: N-MOSFET Technology: FDmesh™ II Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.3A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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STU10NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 70W Case: IPAK Gate-source voltage: ±25V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ || |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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STW18NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.19A Power dissipation: 130W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.25Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 52A Gate charge: 34nC |
auf Bestellung 52 Stücke: Lieferzeit 14-21 Tag (e) |
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STP18NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; Idm: 52A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.2A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.285Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 52A Gate charge: 35nC |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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STP24NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 68A Gate charge: 44nC |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
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STP34NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.105Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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STF34NM60ND | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; Idm: 116A Type of transistor: N-MOSFET Technology: FDmesh™ II Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 116A |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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STF24NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 11A; 30W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 293 Stücke: Lieferzeit 14-21 Tag (e) |
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STW34NM60ND | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247 Type of transistor: N-MOSFET Technology: FDmesh™ II Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 97mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| STL3NM60N | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 2.6A; 22W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.2A Power dissipation: 22W Case: PowerFLAT 3.3x3.3 Gate-source voltage: ±25V On-state resistance: 1.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 2.6A Gate charge: 9.5nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| STU7NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5A; 45W; IPAK,TO251 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 45W Case: IPAK; TO251 On-state resistance: 0.9Ω Mounting: THT Kind of channel: enhancement Gate charge: 14nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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STD3NM60N | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.3A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.3A Power dissipation: 50W Case: DPAK On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 9.5nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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STD5NM60T4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.1A; 96W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.1A Power dissipation: 96W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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STD9NM60N | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 6.5A; Idm: 26A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.5A Power dissipation: 70W Case: DPAK Gate-source voltage: ±25V On-state resistance: 745mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 26A Gate charge: 17.4nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STP9NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 6.5A; 70W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.5A Power dissipation: 70W Case: TO220-3 On-state resistance: 0.63Ω Mounting: THT Gate charge: 17.4nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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STGP20NC60V | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 30A; 200W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 200W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 100A Mounting: THT Gate charge: 0.1µC Kind of package: tube |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ85CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 99V; 13A; bidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 85V Breakdown voltage: 99V Max. forward impulse current: 13A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
auf Bestellung 1878 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ154A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 171V; 7A; unidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 154V Breakdown voltage: 171V Max. forward impulse current: 7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
auf Bestellung 2691 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ30CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 33.3V; 36A; bidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 36A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
auf Bestellung 21592 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ6.5CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6.5V Breakdown voltage: 7.2...7.58V Max. forward impulse current: 266A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 50µA Kind of package: reel; tape Manufacturer series: SMBJ |
auf Bestellung 9914 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ6.5CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6.5V Breakdown voltage: 7.2...7.58V Max. forward impulse current: 266A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 50µA Manufacturer series: SMBJ Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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STM8S103F2M6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: SO20 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 640B EEPROM; 1kB RAM; 4kB FLASH Number of 16bit timers: 2 Number of 8bit timers: 1 Number of PWM channels: 3 Number of 10bit A/D converters: 5 Family: STM8S Kind of core: 8-bit |
Produkt ist nicht verfügbar |
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STM8S103F2M6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: SO20 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 640B EEPROM; 1kB RAM; 4kB FLASH Number of 16bit timers: 2 Number of 8bit timers: 1 Number of PWM channels: 3 Number of 10bit A/D converters: 5 Family: STM8S Kind of core: 8-bit |
Produkt ist nicht verfügbar |
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STM8S103F2P3TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: TSSOP20 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 640B EEPROM; 1kB RAM; 4kB FLASH Number of 16bit timers: 2 Number of 8bit timers: 1 Number of PWM channels: 3 Number of 10bit A/D converters: 5 Family: STM8S Kind of core: 8-bit |
Produkt ist nicht verfügbar |
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STM8S103F2P6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: TSSOP20 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 640B EEPROM; 1kB RAM; 4kB FLASH Number of 16bit timers: 2 Number of 8bit timers: 1 Number of PWM channels: 3 Number of 10bit A/D converters: 5 Family: STM8S Kind of core: 8-bit |
Produkt ist nicht verfügbar |
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STM8S103F3M6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: SO20 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 640B EEPROM; 1kB RAM; 8kB FLASH Number of 16bit timers: 2 Number of 8bit timers: 1 Number of PWM channels: 3 Number of 10bit A/D converters: 5 Family: STM8S Kind of core: 8-bit |
Produkt ist nicht verfügbar |
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| STM8S103F3P3 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: TSSOP20 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 640B EEPROM; 1kB RAM; 8kB FLASH Number of 16bit timers: 2 Number of 8bit timers: 1 Number of PWM channels: 3 Number of 10bit A/D converters: 5 Family: STM8S Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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STM8S103F3P3TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: TSSOP20 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 640B EEPROM; 1kB RAM; 8kB FLASH Number of 16bit timers: 2 Number of 8bit timers: 1 Number of PWM channels: 3 Number of 10bit A/D converters: 5 Family: STM8S Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BTB24-800CWRG | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 25A; Igt: 35mA; TO220AB Typ of triac: standard Max. off-state voltage: 0.8kV Max. load current: 25A Gate current: 35mA Case: TO220AB Mounting: THT |
auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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STM32F205RGT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 120MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 1.8...3.6V DC Interface: CAN; I2C; IrDA; LIN; MMC; SPI; USART; USB OTG Kind of architecture: Cortex M3 Integrated circuit features: Brown Out Reset (BOR); DMA; LCD controller; PoR; PWM Memory: 132kB SRAM; 1MB FLASH Operating temperature: -40...85°C Family: STM32F2 Kind of core: 32-bit Number of 12bit D/A converters: 2 Number of 12bit A/D converters: 16 |
Produkt ist nicht verfügbar |
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STM32F205RGT6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 120MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 1.8...3.6V DC Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB Kind of architecture: Cortex M3 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG Memory: 128kB FLASH; 1MB FLASH Operating temperature: -40...85°C Family: STM32F2 Kind of core: 32-bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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STM32F205RGT6V | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 120MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 1.8...3.6V DC Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB Kind of architecture: Cortex M3 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG Memory: 128kB FLASH; 1MB FLASH Operating temperature: -40...85°C Family: STM32F2 Kind of core: 32-bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 160 Stücke Im Einkaufswagen Stück im Wert von UAH |
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STM32F205RGT6W | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 120MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 1.8...3.6V DC Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB Kind of architecture: Cortex M3 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG Memory: 128kB FLASH; 1MB FLASH Operating temperature: -40...85°C Family: STM32F2 Kind of core: 32-bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 160 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SCTW40N120G2VAG | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 25A Pulsed drain current: 100A Power dissipation: 290W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 0.195Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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L6226D | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; H-bridge; motor controller; SO24; 1.4A; Ch: 4; 100kHz Application: universal Topology: H-bridge Mounting: SMD Case: SO24 Operating temperature: -40...150°C Supply voltage: 8...52V Output current: 1.4A On-state resistance: 0.73Ω Number of channels: 4 Frequency: 0.1MHz Kind of integrated circuit: motor controller Type of integrated circuit: driver |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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L6206D | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; H-bridge; motor controller; SO24; 2.8A; Ch: 4; 100kHz Type of integrated circuit: driver Output current: 2.8A Case: SO24 Mounting: SMD Kind of package: tube Operating temperature: -25...125°C Number of channels: 4 Supply voltage: 8...52V Application: DC motors Kind of integrated circuit: motor controller Frequency: 0.1MHz On-state resistance: 0.3Ω Topology: H-bridge |
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STP16DP05MTR | STMicroelectronics |
Category: LED driversDescription: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: SO24 Output current: 5...100mA Output voltage: 1.3...20V Number of channels: 16 Integrated circuit features: fault detection; shift register Mounting: SMD Operating temperature: -40...125°C Input voltage: 3...5.5V Frequency: 30MHz Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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STP16CPS05MTR | STMicroelectronics |
Category: LED driversDescription: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: SO24 Output current: 5...100mA Output voltage: 1.3...20V Number of channels: 16 Mounting: SMD Operating temperature: -40...125°C Input voltage: 3...5.5V Frequency: 30MHz Kind of package: reel; tape |
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Im Einkaufswagen Stück im Wert von UAH |
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STP16CPC05MTR | STMicroelectronics |
Category: LED driversDescription: IC: driver; LED driver; SO24; 3÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V Case: SO24 Mounting: SMD Kind of package: reel; tape Output voltage: 1.3...20V Kind of integrated circuit: LED driver Number of channels: 16 Frequency: 30MHz Input voltage: 3...5.5V Output current: 3...100mA Type of integrated circuit: driver Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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STP16CPP05MTR | STMicroelectronics |
Category: LED driversDescription: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V Case: SO24 Mounting: SMD Kind of package: reel; tape Output voltage: 1.3...20V Kind of integrated circuit: LED driver Number of channels: 16 Frequency: 30MHz Input voltage: 3...5.5V Output current: 3...40mA Type of integrated circuit: driver Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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STP16DPP05MTR | STMicroelectronics |
Category: LED driversDescription: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V Case: SO24 Mounting: SMD Kind of package: reel; tape Output voltage: 1.3...20V Kind of integrated circuit: LED driver Number of channels: 16 Frequency: 30MHz Input voltage: 3...5.5V Output current: 3...40mA Type of integrated circuit: driver Operating temperature: -40...125°C Integrated circuit features: fault detection |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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STP16DPPS05MTR | STMicroelectronics |
Category: LED driversDescription: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V Case: SO24 Mounting: SMD Kind of package: reel; tape Output voltage: 1.3...20V Kind of integrated circuit: LED driver Number of channels: 16 Frequency: 30MHz Input voltage: 3...5.5V Output current: 3...40mA Type of integrated circuit: driver Operating temperature: -40...125°C Integrated circuit features: fault detection |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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STP16DPS05MTR | STMicroelectronics |
Category: LED driversDescription: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V Case: SO24 Mounting: SMD Kind of package: reel; tape Output voltage: 1.3...20V Kind of integrated circuit: LED driver Number of channels: 16 Frequency: 30MHz Input voltage: 3...5.5V Output current: 5...100mA Type of integrated circuit: driver Operating temperature: -40...125°C Integrated circuit features: fault detection |
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Im Einkaufswagen Stück im Wert von UAH |
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L6235D | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; motor controller; SO24; 2.8A; 100kHz; 12÷52V Application: universal Mounting: SMD Case: SO24 Operating temperature: -40...150°C Supply voltage: 12...52V Output current: 2.8A Frequency: 0.1MHz Kind of integrated circuit: motor controller Type of integrated circuit: driver |
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Im Einkaufswagen Stück im Wert von UAH |
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STP9NK90Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 5A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 174 Stücke: Lieferzeit 14-21 Tag (e) |
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STP9NK60ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 30W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.4A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 233 Stücke: Lieferzeit 14-21 Tag (e) |
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STP9NK70ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 35W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.7A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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STP9NK65Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 6.4A; Idm: 25.6A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.4A Pulsed drain current: 25.6A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Gate charge: 41nC Kind of package: tube Kind of channel: enhancement |
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STP9NK60Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 125W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.4A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 298 Stücke: Lieferzeit 14-21 Tag (e) |
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STP9NK65ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 6.4A; Idm: 25.6A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.4A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Gate charge: 41nC Kind of channel: enhancement Pulsed drain current: 25.6A Kind of package: tube |
auf Bestellung 138 Stücke: Lieferzeit 14-21 Tag (e) |
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STP9N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 60W; TO220-3 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.5A Power dissipation: 60W Case: TO220-3 On-state resistance: 780mΩ Mounting: THT Kind of channel: enhancement Gate charge: 10nC |
auf Bestellung 134 Stücke: Lieferzeit 14-21 Tag (e) |
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| STP95N4F3 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 80A; 110W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Power dissipation: 110W Case: TO220-3 On-state resistance: 6.2mΩ Mounting: THT Gate charge: 54nC Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STP22NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 16A; Idm: 64A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Gate charge: 44nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 16A; Idm: 64A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Gate charge: 44nC
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
| STF18NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; 30W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; 30W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| STF10NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 19nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 19nC
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)
| STW48NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
| STD10NM60N |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2002 Stücke:
Lieferzeit 14-21 Tag (e)
| STF22NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
| STP11NM60 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Gate charge: 30nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Gate charge: 30nC
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
| STW34NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
| STP11NM60ND |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 6.3A; 90W
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 6.3A; 90W
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| STU10NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ ||
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ ||
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| STW18NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 52A
Gate charge: 34nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 52A
Gate charge: 34nC
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
| STP18NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; Idm: 52A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 52A
Gate charge: 35nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; Idm: 52A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 52A
Gate charge: 35nC
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
| STP24NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 68A
Gate charge: 44nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 68A
Gate charge: 44nC
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
| STP34NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.105Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.105Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
| STF34NM60ND |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; Idm: 116A
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 116A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; Idm: 116A
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 116A
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| STF24NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 11A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 11A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
| STW34NM60ND |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| STL3NM60N |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 2.6A; 22W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 22W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±25V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2.6A
Gate charge: 9.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 2.6A; 22W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 22W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±25V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2.6A
Gate charge: 9.5nC
Produkt ist nicht verfügbar
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| STU7NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 45W; IPAK,TO251
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 45W
Case: IPAK; TO251
On-state resistance: 0.9Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 14nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 45W; IPAK,TO251
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 45W
Case: IPAK; TO251
On-state resistance: 0.9Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 14nC
Produkt ist nicht verfügbar
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| STD3NM60N |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.3A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.3A
Power dissipation: 50W
Case: DPAK
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 9.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.3A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.3A
Power dissipation: 50W
Case: DPAK
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 9.5nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| STD5NM60T4 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.1A; 96W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.1A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.1A; 96W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.1A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| STD9NM60N |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; Idm: 26A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 745mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 17.4nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; Idm: 26A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 745mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 17.4nC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| STP9NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; 70W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: TO220-3
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 17.4nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; 70W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: TO220-3
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 17.4nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| STGP20NC60V |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| SMAJ85CA-TR |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 99V; 13A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 99V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 99V; 13A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 99V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
auf Bestellung 1878 Stücke:
Lieferzeit 14-21 Tag (e)
| SMAJ154A-TR |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 171V; 7A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 154V
Breakdown voltage: 171V
Max. forward impulse current: 7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 171V; 7A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 154V
Breakdown voltage: 171V
Max. forward impulse current: 7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
auf Bestellung 2691 Stücke:
Lieferzeit 14-21 Tag (e)
| SMAJ30CA-TR |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3V; 36A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3V; 36A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
auf Bestellung 21592 Stücke:
Lieferzeit 14-21 Tag (e)
| SMBJ6.5CA-TR |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.2...7.58V
Max. forward impulse current: 266A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.2...7.58V
Max. forward impulse current: 266A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 9914 Stücke:
Lieferzeit 14-21 Tag (e)
| SMBJ6.5CA-TR |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.2...7.58V
Max. forward impulse current: 266A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.2...7.58V
Max. forward impulse current: 266A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| STM8S103F2M6 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Produkt ist nicht verfügbar
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| STM8S103F2M6TR |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Produkt ist nicht verfügbar
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| STM8S103F2P3TR |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Produkt ist nicht verfügbar
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| STM8S103F2P6TR |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Produkt ist nicht verfügbar
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| STM8S103F3M6TR |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Produkt ist nicht verfügbar
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| STM8S103F3P3 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen
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| STM8S103F3P3TR |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Produkt ist nicht verfügbar
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| BTB24-800CWRG |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 25A; Igt: 35mA; TO220AB
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 25A
Gate current: 35mA
Case: TO220AB
Mounting: THT
Category: Triacs
Description: Triac; 800V; 25A; Igt: 35mA; TO220AB
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 25A
Gate current: 35mA
Case: TO220AB
Mounting: THT
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
| STM32F205RGT6 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; I2C; IrDA; LIN; MMC; SPI; USART; USB OTG
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); DMA; LCD controller; PoR; PWM
Memory: 132kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Number of 12bit D/A converters: 2
Number of 12bit A/D converters: 16
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; I2C; IrDA; LIN; MMC; SPI; USART; USB OTG
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); DMA; LCD controller; PoR; PWM
Memory: 132kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Number of 12bit D/A converters: 2
Number of 12bit A/D converters: 16
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| STM32F205RGT6TR |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| STM32F205RGT6V |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 160 Stücke
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| STM32F205RGT6W |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 160 Stücke
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| SCTW40N120G2VAG |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 290W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 290W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
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| L6226D |
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Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; SO24; 1.4A; Ch: 4; 100kHz
Application: universal
Topology: H-bridge
Mounting: SMD
Case: SO24
Operating temperature: -40...150°C
Supply voltage: 8...52V
Output current: 1.4A
On-state resistance: 0.73Ω
Number of channels: 4
Frequency: 0.1MHz
Kind of integrated circuit: motor controller
Type of integrated circuit: driver
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; SO24; 1.4A; Ch: 4; 100kHz
Application: universal
Topology: H-bridge
Mounting: SMD
Case: SO24
Operating temperature: -40...150°C
Supply voltage: 8...52V
Output current: 1.4A
On-state resistance: 0.73Ω
Number of channels: 4
Frequency: 0.1MHz
Kind of integrated circuit: motor controller
Type of integrated circuit: driver
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
| L6206D |
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Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; SO24; 2.8A; Ch: 4; 100kHz
Type of integrated circuit: driver
Output current: 2.8A
Case: SO24
Mounting: SMD
Kind of package: tube
Operating temperature: -25...125°C
Number of channels: 4
Supply voltage: 8...52V
Application: DC motors
Kind of integrated circuit: motor controller
Frequency: 0.1MHz
On-state resistance: 0.3Ω
Topology: H-bridge
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; SO24; 2.8A; Ch: 4; 100kHz
Type of integrated circuit: driver
Output current: 2.8A
Case: SO24
Mounting: SMD
Kind of package: tube
Operating temperature: -25...125°C
Number of channels: 4
Supply voltage: 8...52V
Application: DC motors
Kind of integrated circuit: motor controller
Frequency: 0.1MHz
On-state resistance: 0.3Ω
Topology: H-bridge
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
| STP16DP05MTR |
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Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO24
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 16
Integrated circuit features: fault detection; shift register
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO24
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 16
Integrated circuit features: fault detection; shift register
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
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| STP16CPS05MTR |
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Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO24
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 16
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO24
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 16
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
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| STP16CPC05MTR |
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Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Kind of integrated circuit: LED driver
Number of channels: 16
Frequency: 30MHz
Input voltage: 3...5.5V
Output current: 3...100mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Kind of integrated circuit: LED driver
Number of channels: 16
Frequency: 30MHz
Input voltage: 3...5.5V
Output current: 3...100mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
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| STP16CPP05MTR |
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Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Kind of integrated circuit: LED driver
Number of channels: 16
Frequency: 30MHz
Input voltage: 3...5.5V
Output current: 3...40mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Kind of integrated circuit: LED driver
Number of channels: 16
Frequency: 30MHz
Input voltage: 3...5.5V
Output current: 3...40mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
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| STP16DPP05MTR |
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Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Kind of integrated circuit: LED driver
Number of channels: 16
Frequency: 30MHz
Input voltage: 3...5.5V
Output current: 3...40mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Integrated circuit features: fault detection
Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Kind of integrated circuit: LED driver
Number of channels: 16
Frequency: 30MHz
Input voltage: 3...5.5V
Output current: 3...40mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Integrated circuit features: fault detection
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| STP16DPPS05MTR |
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Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Kind of integrated circuit: LED driver
Number of channels: 16
Frequency: 30MHz
Input voltage: 3...5.5V
Output current: 3...40mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Integrated circuit features: fault detection
Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Kind of integrated circuit: LED driver
Number of channels: 16
Frequency: 30MHz
Input voltage: 3...5.5V
Output current: 3...40mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Integrated circuit features: fault detection
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| STP16DPS05MTR |
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Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Kind of integrated circuit: LED driver
Number of channels: 16
Frequency: 30MHz
Input voltage: 3...5.5V
Output current: 5...100mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Integrated circuit features: fault detection
Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Kind of integrated circuit: LED driver
Number of channels: 16
Frequency: 30MHz
Input voltage: 3...5.5V
Output current: 5...100mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Integrated circuit features: fault detection
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| L6235D |
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Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SO24; 2.8A; 100kHz; 12÷52V
Application: universal
Mounting: SMD
Case: SO24
Operating temperature: -40...150°C
Supply voltage: 12...52V
Output current: 2.8A
Frequency: 0.1MHz
Kind of integrated circuit: motor controller
Type of integrated circuit: driver
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SO24; 2.8A; 100kHz; 12÷52V
Application: universal
Mounting: SMD
Case: SO24
Operating temperature: -40...150°C
Supply voltage: 12...52V
Output current: 2.8A
Frequency: 0.1MHz
Kind of integrated circuit: motor controller
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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| STP9NK90Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)
| STP9NK60ZFP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)
| STP9NK70ZFP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
| STP9NK65Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.4A; Idm: 25.6A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.4A
Pulsed drain current: 25.6A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.4A; Idm: 25.6A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.4A
Pulsed drain current: 25.6A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
| STP9NK60Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 125W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 125W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
| STP9NK65ZFP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.4A; Idm: 25.6A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.4A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 41nC
Kind of channel: enhancement
Pulsed drain current: 25.6A
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.4A; Idm: 25.6A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.4A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 41nC
Kind of channel: enhancement
Pulsed drain current: 25.6A
Kind of package: tube
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
| STP9N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 60W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.5A
Power dissipation: 60W
Case: TO220-3
On-state resistance: 780mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 10nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 60W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.5A
Power dissipation: 60W
Case: TO220-3
On-state resistance: 780mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 10nC
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| STP95N4F3 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 110W
Case: TO220-3
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 54nC
Kind of channel: enhancement
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 110W
Case: TO220-3
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 54nC
Kind of channel: enhancement
Application: automotive industry
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