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STP22NM60N STP22NM60N STMicroelectronics en.CD00237949.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 16A; Idm: 64A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Gate charge: 44nC
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STF18NM60N STF18NM60N STMicroelectronics STF18NM60N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; 30W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STF10NM60N STF10NM60N STMicroelectronics std10nm60n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 19nC
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STW48NM60N STW48NM60N STMicroelectronics STW48NM60N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STD10NM60N STD10NM60N STMicroelectronics STD10NM60N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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STF22NM60N STF22NM60N STMicroelectronics STF22NM60N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STP11NM60 STP11NM60 STMicroelectronics STP11NM60_STB11NM60T4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Gate charge: 30nC
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STW34NM60N STW34NM60N STMicroelectronics STW34NM60N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STP11NM60ND STP11NM60ND STMicroelectronics STD11NM60ND.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 6.3A; 90W
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STU10NM60N STU10NM60N STMicroelectronics STD10NM60N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ ||
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STW18NM60N STW18NM60N STMicroelectronics stw18nm60n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 52A
Gate charge: 34nC
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STP18NM60N STP18NM60N STMicroelectronics en.CD00238184.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; Idm: 52A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 52A
Gate charge: 35nC
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STP24NM60N STP24NM60N STMicroelectronics stp24nm60n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 68A
Gate charge: 44nC
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STP34NM60N STP34NM60N STMicroelectronics STW34NM60N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.105Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STF34NM60ND STF34NM60ND STMicroelectronics STx34NM60ND_DS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; Idm: 116A
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 116A
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STF24NM60N STF24NM60N STMicroelectronics STF24NM60N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 11A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STW34NM60ND STW34NM60ND STMicroelectronics STx34NM60ND-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STL3NM60N STMicroelectronics en.DM00048286.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 2.6A; 22W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 22W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±25V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2.6A
Gate charge: 9.5nC
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STU7NM60N STMicroelectronics en.CD00252114.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 45W; IPAK,TO251
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 45W
Case: IPAK; TO251
On-state resistance: 0.9Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 14nC
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STD3NM60N STD3NM60N STMicroelectronics en.DM00052307.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.3A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.3A
Power dissipation: 50W
Case: DPAK
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 9.5nC
Produkt ist nicht verfügbar
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STD5NM60T4 STD5NM60T4 STMicroelectronics std5nm60.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.1A; 96W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.1A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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STD9NM60N STD9NM60N STMicroelectronics en.CD00286931.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; Idm: 26A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 745mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 17.4nC
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STP9NM60N STMicroelectronics en.CD00286931.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; 70W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: TO220-3
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 17.4nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STGP20NC60V STGP20NC60V STMicroelectronics en.CD00003669.pdf description Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
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SMAJ85CA-TR SMAJ85CA-TR STMicroelectronics SMAJxxX_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 99V; 13A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 99V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ154A-TR SMAJ154A-TR STMicroelectronics SMAJxxX_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 171V; 7A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 154V
Breakdown voltage: 171V
Max. forward impulse current: 7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ30CA-TR SMAJ30CA-TR STMicroelectronics SMAJxxX_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3V; 36A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMBJ6.5CA-TR SMBJ6.5CA-TR STMicroelectronics SMBJ6.5CA.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.2...7.58V
Max. forward impulse current: 266A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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SMBJ6.5CA-TR SMBJ6.5CA-TR STMicroelectronics cd00001366.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.2...7.58V
Max. forward impulse current: 266A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Manufacturer series: SMBJ
Kind of package: reel; tape
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STM8S103F2M6 STM8S103F2M6 STMicroelectronics STM8S103F2-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F2M6TR STM8S103F2M6TR STMicroelectronics STM8S103F2-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F2P3TR STM8S103F2P3TR STMicroelectronics STM8S103F2-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F2P6TR STM8S103F2P6TR STMicroelectronics STM8S103F2-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F3M6TR STM8S103F3M6TR STMicroelectronics STM8S103F2-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F3P3 STMicroelectronics en.CD00226640.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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STM8S103F3P3TR STM8S103F3P3TR STMicroelectronics STM8S103F2-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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BTB24-800CWRG BTB24-800CWRG STMicroelectronics btb24.pdf Category: Triacs
Description: Triac; 800V; 25A; Igt: 35mA; TO220AB
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 25A
Gate current: 35mA
Case: TO220AB
Mounting: THT
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STM32F205RGT6 STM32F205RGT6 STMicroelectronics STM32F205VCT6.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; I2C; IrDA; LIN; MMC; SPI; USART; USB OTG
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); DMA; LCD controller; PoR; PWM
Memory: 132kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Number of 12bit D/A converters: 2
Number of 12bit A/D converters: 16
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STM32F205RGT6TR STM32F205RGT6TR STMicroelectronics stm32f205rb.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Produkt ist nicht verfügbar
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STM32F205RGT6V STM32F205RGT6V STMicroelectronics stm32f205rb.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Produkt ist nicht verfügbar
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STM32F205RGT6W STM32F205RGT6W STMicroelectronics stm32f205rb.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Produkt ist nicht verfügbar
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SCTW40N120G2VAG STMicroelectronics sctw40n120g2vag.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 290W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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L6226D L6226D STMicroelectronics l6226.pdf Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; SO24; 1.4A; Ch: 4; 100kHz
Application: universal
Topology: H-bridge
Mounting: SMD
Case: SO24
Operating temperature: -40...150°C
Supply voltage: 8...52V
Output current: 1.4A
On-state resistance: 0.73Ω
Number of channels: 4
Frequency: 0.1MHz
Kind of integrated circuit: motor controller
Type of integrated circuit: driver
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L6206D L6206D STMicroelectronics l6206.pdf Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; SO24; 2.8A; Ch: 4; 100kHz
Type of integrated circuit: driver
Output current: 2.8A
Case: SO24
Mounting: SMD
Kind of package: tube
Operating temperature: -25...125°C
Number of channels: 4
Supply voltage: 8...52V
Application: DC motors
Kind of integrated circuit: motor controller
Frequency: 0.1MHz
On-state resistance: 0.3Ω
Topology: H-bridge
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STP16DP05MTR STP16DP05MTR STMicroelectronics en.CD00149163.pdf Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO24
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 16
Integrated circuit features: fault detection; shift register
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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STP16CPS05MTR STP16CPS05MTR STMicroelectronics en.CD00126635.pdf Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO24
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 16
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
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STP16CPC05MTR STP16CPC05MTR STMicroelectronics en.CD00224115.pdf Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Kind of integrated circuit: LED driver
Number of channels: 16
Frequency: 30MHz
Input voltage: 3...5.5V
Output current: 3...100mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
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STP16CPP05MTR STP16CPP05MTR STMicroelectronics en.CD00225110.pdf Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Kind of integrated circuit: LED driver
Number of channels: 16
Frequency: 30MHz
Input voltage: 3...5.5V
Output current: 3...40mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
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STP16DPP05MTR STP16DPP05MTR STMicroelectronics en.CD00253074.pdf Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Kind of integrated circuit: LED driver
Number of channels: 16
Frequency: 30MHz
Input voltage: 3...5.5V
Output current: 3...40mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Integrated circuit features: fault detection
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STP16DPPS05MTR STP16DPPS05MTR STMicroelectronics en.CD00237334.pdf Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Kind of integrated circuit: LED driver
Number of channels: 16
Frequency: 30MHz
Input voltage: 3...5.5V
Output current: 3...40mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Integrated circuit features: fault detection
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STP16DPS05MTR STP16DPS05MTR STMicroelectronics en.CD00253310.pdf Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Kind of integrated circuit: LED driver
Number of channels: 16
Frequency: 30MHz
Input voltage: 3...5.5V
Output current: 5...100mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Integrated circuit features: fault detection
Produkt ist nicht verfügbar
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L6235D L6235D STMicroelectronics l6235.pdf Category: Motor and PWM drivers
Description: IC: driver; motor controller; SO24; 2.8A; 100kHz; 12÷52V
Application: universal
Mounting: SMD
Case: SO24
Operating temperature: -40...150°C
Supply voltage: 12...52V
Output current: 2.8A
Frequency: 0.1MHz
Kind of integrated circuit: motor controller
Type of integrated circuit: driver
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STP9NK90Z STP9NK90Z STMicroelectronics STF9NK90Z.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STP9NK60ZFP STP9NK60ZFP STMicroelectronics STB9NK60Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STP9NK70ZFP STP9NK70ZFP STMicroelectronics STP9NK70Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STP9NK65Z STP9NK65Z STMicroelectronics en.CD00003048.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.4A; Idm: 25.6A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.4A
Pulsed drain current: 25.6A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
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STP9NK60Z STP9NK60Z STMicroelectronics STB9NK60Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 125W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STP9NK65ZFP STP9NK65ZFP STMicroelectronics en.CD00003048.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.4A; Idm: 25.6A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.4A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 41nC
Kind of channel: enhancement
Pulsed drain current: 25.6A
Kind of package: tube
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STP9N60M2 STP9N60M2 STMicroelectronics en.DM00080324.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 60W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.5A
Power dissipation: 60W
Case: TO220-3
On-state resistance: 780mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 10nC
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STP95N4F3 STMicroelectronics en.CD00153132.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 110W
Case: TO220-3
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 54nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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STP22NM60N en.CD00237949.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 16A; Idm: 64A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Gate charge: 44nC
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STF18NM60N STF18NM60N.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; 30W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STF10NM60N std10nm60n.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 19nC
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STW48NM60N STW48NM60N-DTE.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STD10NM60N STD10NM60N.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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STF22NM60N STF22NM60N.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STP11NM60 STP11NM60_STB11NM60T4.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Gate charge: 30nC
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STW34NM60N STW34NM60N-DTE.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STP11NM60ND STD11NM60ND.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 6.3A; 90W
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STU10NM60N STD10NM60N.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ ||
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STW18NM60N stw18nm60n.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 52A
Gate charge: 34nC
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STP18NM60N en.CD00238184.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; Idm: 52A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 52A
Gate charge: 35nC
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STP24NM60N stp24nm60n.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 68A
Gate charge: 44nC
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STP34NM60N STW34NM60N-DTE.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.105Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STF34NM60ND STx34NM60ND_DS.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; Idm: 116A
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 116A
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STF24NM60N STF24NM60N.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 11A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STW34NM60ND STx34NM60ND-DTE.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STL3NM60N en.DM00048286.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 2.6A; 22W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 22W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±25V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2.6A
Gate charge: 9.5nC
Produkt ist nicht verfügbar
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STU7NM60N en.CD00252114.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 45W; IPAK,TO251
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 45W
Case: IPAK; TO251
On-state resistance: 0.9Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 14nC
Produkt ist nicht verfügbar
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STD3NM60N en.DM00052307.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.3A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.3A
Power dissipation: 50W
Case: DPAK
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 9.5nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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STD5NM60T4 std5nm60.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.1A; 96W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.1A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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STD9NM60N en.CD00286931.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; Idm: 26A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 745mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 17.4nC
Produkt ist nicht verfügbar
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STP9NM60N en.CD00286931.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; 70W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: TO220-3
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 17.4nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STGP20NC60V description en.CD00003669.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 200W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
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SMAJ85CA-TR SMAJxxX_ser.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 99V; 13A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 99V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
auf Bestellung 1878 Stücke:
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SMAJ154A-TR SMAJxxX_ser.pdf
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 171V; 7A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 154V
Breakdown voltage: 171V
Max. forward impulse current: 7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ30CA-TR SMAJxxX_ser.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3V; 36A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
auf Bestellung 21592 Stücke:
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SMBJ6.5CA-TR SMBJ6.5CA.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.2...7.58V
Max. forward impulse current: 266A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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SMBJ6.5CA-TR cd00001366.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.2...7.58V
Max. forward impulse current: 266A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Produkt ist nicht verfügbar
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STM8S103F2M6 STM8S103F2-DTE.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Produkt ist nicht verfügbar
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STM8S103F2M6TR STM8S103F2-DTE.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Produkt ist nicht verfügbar
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STM8S103F2P3TR STM8S103F2-DTE.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Produkt ist nicht verfügbar
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STM8S103F2P6TR STM8S103F2-DTE.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Produkt ist nicht verfügbar
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STM8S103F3M6TR STM8S103F2-DTE.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Produkt ist nicht verfügbar
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STM8S103F3P3 en.CD00226640.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Produkt ist nicht verfügbar
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STM8S103F3P3TR STM8S103F2-DTE.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Produkt ist nicht verfügbar
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BTB24-800CWRG btb24.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 25A; Igt: 35mA; TO220AB
Typ of triac: standard
Max. off-state voltage: 0.8kV
Max. load current: 25A
Gate current: 35mA
Case: TO220AB
Mounting: THT
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STM32F205RGT6 STM32F205VCT6.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; I2C; IrDA; LIN; MMC; SPI; USART; USB OTG
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); DMA; LCD controller; PoR; PWM
Memory: 132kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Number of 12bit D/A converters: 2
Number of 12bit A/D converters: 16
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STM32F205RGT6TR stm32f205rb.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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STM32F205RGT6V stm32f205rb.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 160 Stücke
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STM32F205RGT6W stm32f205rb.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 160 Stücke
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SCTW40N120G2VAG sctw40n120g2vag.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 290W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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L6226D l6226.pdf
Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; SO24; 1.4A; Ch: 4; 100kHz
Application: universal
Topology: H-bridge
Mounting: SMD
Case: SO24
Operating temperature: -40...150°C
Supply voltage: 8...52V
Output current: 1.4A
On-state resistance: 0.73Ω
Number of channels: 4
Frequency: 0.1MHz
Kind of integrated circuit: motor controller
Type of integrated circuit: driver
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L6206D l6206.pdf
Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; SO24; 2.8A; Ch: 4; 100kHz
Type of integrated circuit: driver
Output current: 2.8A
Case: SO24
Mounting: SMD
Kind of package: tube
Operating temperature: -25...125°C
Number of channels: 4
Supply voltage: 8...52V
Application: DC motors
Kind of integrated circuit: motor controller
Frequency: 0.1MHz
On-state resistance: 0.3Ω
Topology: H-bridge
auf Bestellung 35 Stücke:
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STP16DP05MTR en.CD00149163.pdf
Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO24
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 16
Integrated circuit features: fault detection; shift register
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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STP16CPS05MTR en.CD00126635.pdf
Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO24
Output current: 5...100mA
Output voltage: 1.3...20V
Number of channels: 16
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V
Frequency: 30MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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STP16CPC05MTR en.CD00224115.pdf
Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Kind of integrated circuit: LED driver
Number of channels: 16
Frequency: 30MHz
Input voltage: 3...5.5V
Output current: 3...100mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
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STP16CPP05MTR en.CD00225110.pdf
Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Kind of integrated circuit: LED driver
Number of channels: 16
Frequency: 30MHz
Input voltage: 3...5.5V
Output current: 3...40mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
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STP16DPP05MTR en.CD00253074.pdf
Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Kind of integrated circuit: LED driver
Number of channels: 16
Frequency: 30MHz
Input voltage: 3...5.5V
Output current: 3...40mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Integrated circuit features: fault detection
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STP16DPPS05MTR en.CD00237334.pdf
Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Kind of integrated circuit: LED driver
Number of channels: 16
Frequency: 30MHz
Input voltage: 3...5.5V
Output current: 3...40mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Integrated circuit features: fault detection
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STP16DPS05MTR en.CD00253310.pdf
Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Kind of integrated circuit: LED driver
Number of channels: 16
Frequency: 30MHz
Input voltage: 3...5.5V
Output current: 5...100mA
Type of integrated circuit: driver
Operating temperature: -40...125°C
Integrated circuit features: fault detection
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L6235D l6235.pdf
Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SO24; 2.8A; 100kHz; 12÷52V
Application: universal
Mounting: SMD
Case: SO24
Operating temperature: -40...150°C
Supply voltage: 12...52V
Output current: 2.8A
Frequency: 0.1MHz
Kind of integrated circuit: motor controller
Type of integrated circuit: driver
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STP9NK90Z description STF9NK90Z.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 174 Stücke:
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STP9NK60ZFP STB9NK60Z.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STP9NK70ZFP STP9NK70Z.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STP9NK65Z en.CD00003048.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.4A; Idm: 25.6A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.4A
Pulsed drain current: 25.6A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
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STP9NK60Z STB9NK60Z.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 125W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 298 Stücke:
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STP9NK65ZFP en.CD00003048.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.4A; Idm: 25.6A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.4A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 41nC
Kind of channel: enhancement
Pulsed drain current: 25.6A
Kind of package: tube
auf Bestellung 138 Stücke:
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STP9N60M2 en.DM00080324.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 60W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.5A
Power dissipation: 60W
Case: TO220-3
On-state resistance: 780mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 10nC
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STP95N4F3 en.CD00153132.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 110W
Case: TO220-3
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 54nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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