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SIHFR120-GE3 SIHFR120-GE3 Vishay Siliconix sihfr120.pdf Description: MOSFET N-CHANNEL 100V
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
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SIHG052N60EF-GE3 SIHG052N60EF-GE3 Vishay Siliconix sihg052n60ef.pdf Description: MOSFET N-CH 600V 48A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 100 V
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SI1330EDL-T1-BE3 SI1330EDL-T1-BE3 Vishay Siliconix SI1330ED.pdf Description: MOSFET N-CH 60V 240MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
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SI1330EDL-T1-BE3 SI1330EDL-T1-BE3 Vishay Siliconix SI1330ED.pdf Description: MOSFET N-CH 60V 240MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
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SI7230DN-T1-E3 SI7230DN-T1-E3 Vishay Siliconix si7230dn.pdf Description: MOSFET N-CH 30V 9A PPAK 1212-8
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SI7230DN-T1-E3 SI7230DN-T1-E3 Vishay Siliconix si7230dn.pdf Description: MOSFET N-CH 30V 9A PPAK 1212-8
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SQ2337ES-T1_BE3 SQ2337ES-T1_BE3 Vishay Siliconix sq2337es.pdf Description: MOSFET P-CH 80V 2.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1.2A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 40 V
Qualification: AEC-Q101
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SQ2337ES-T1_BE3 SQ2337ES-T1_BE3 Vishay Siliconix sq2337es.pdf Description: MOSFET P-CH 80V 2.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1.2A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 40 V
Qualification: AEC-Q101
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SQ2303ES-T1_BE3 SQ2303ES-T1_BE3 Vishay Siliconix doc?67023 Description: MOSFET P-CH 30V 2.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.7A, 10V
Power Dissipation (Max): 1.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V
Qualification: AEC-Q101
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SQ2303ES-T1_BE3 SQ2303ES-T1_BE3 Vishay Siliconix doc?67023 Description: MOSFET P-CH 30V 2.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.7A, 10V
Power Dissipation (Max): 1.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V
Qualification: AEC-Q101
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SQ2301ES-T1_BE3 SQ2301ES-T1_BE3 Vishay Siliconix sq2301es.pdf Description: MOSFET P-CH 20V 3.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 10 V
Qualification: AEC-Q101
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SQ2301ES-T1_BE3 SQ2301ES-T1_BE3 Vishay Siliconix sq2301es.pdf Description: MOSFET P-CH 20V 3.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 10 V
Qualification: AEC-Q101
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SQ2362ES-T1_BE3 SQ2362ES-T1_BE3 Vishay Siliconix sq2362es.pdf Description: MOSFET N-CH 60V 4.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 2.4A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Qualification: AEC-Q101
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SQ2362ES-T1_BE3 SQ2362ES-T1_BE3 Vishay Siliconix sq2362es.pdf Description: MOSFET N-CH 60V 4.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 2.4A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Qualification: AEC-Q101
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SQ2364EES-T1_BE3 SQ2364EES-T1_BE3 Vishay Siliconix sq2364ees.pdf Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2A, 4.5V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Qualification: AEC-Q101
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SQ2364EES-T1_BE3 SQ2364EES-T1_BE3 Vishay Siliconix sq2364ees.pdf Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2A, 4.5V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Qualification: AEC-Q101
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SQ2398ES-T1_BE3 SQ2398ES-T1_BE3 Vishay Siliconix sq2398es.pdf Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 50 V
Qualification: AEC-Q101
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SQ2398ES-T1_BE3 SQ2398ES-T1_BE3 Vishay Siliconix sq2398es.pdf Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 50 V
Qualification: AEC-Q101
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SQ2309ES-T1_BE3 SQ2309ES-T1_BE3 Vishay Siliconix Description: MOSFET P-CH 60V 1.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 335mOhm @ 1.25A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
Qualification: AEC-Q101
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3000+0.42 EUR
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SQ2361ES-T1_BE3 SQ2361ES-T1_BE3 Vishay Siliconix sq2361es.pdf Description: MOSFET P-CH 60V 2.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Qualification: AEC-Q101
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3000+0.49 EUR
6000+0.45 EUR
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SQ2361ES-T1_BE3 SQ2361ES-T1_BE3 Vishay Siliconix sq2361es.pdf Description: MOSFET P-CH 60V 2.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Qualification: AEC-Q101
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SQ2318AES-T1_BE3 SQ2318AES-T1_BE3 Vishay Siliconix sq2318aes.pdf Description: MOSFET N-CH 40V 8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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SQ2318AES-T1_BE3 SQ2318AES-T1_BE3 Vishay Siliconix sq2318aes.pdf Description: MOSFET N-CH 40V 8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 48297 Stücke:
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SQ2351ES-T1_BE3 SQ2351ES-T1_BE3 Vishay Siliconix sq2351es.pdf Description: MOSFET P-CH 20V 3.2A SOT23-3
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SQ2351ES-T1_BE3 SQ2351ES-T1_BE3 Vishay Siliconix sq2351es.pdf Description: MOSFET P-CH 20V 3.2A SOT23-3
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SQ2315ES-T1_BE3 SQ2315ES-T1_BE3 Vishay Siliconix sq2315es.pdf Description: MOSFET P-CH 12V 5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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SQ2315ES-T1_BE3 SQ2315ES-T1_BE3 Vishay Siliconix sq2315es.pdf Description: MOSFET P-CH 12V 5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
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IRFP460HPBF IRFP460HPBF Vishay Siliconix irfp460hpbf.pdf Description: POWER MOSFET TO-247AC, 270 M @ 1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3208 pF @ 100 V
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SQD45P03-12-T4_GE3 SQD45P03-12-T4_GE3 Vishay Siliconix sqd45p03.pdf Description: MOSFET P-CH 30V 50A TO252AA
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SI7116BDN-T1-GE3 SI7116BDN-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 40V 18.4A/65A PPAK
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SI7116BDN-T1-GE3 SI7116BDN-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 40V 18.4A/65A PPAK
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DG4599DL-T1-E3 DG4599DL-T1-E3 Vishay Siliconix dg4599.pdf Description: IC SWITCH SINGLE SPDT SC70-6
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DG4599DL-T1-E3 DG4599DL-T1-E3 Vishay Siliconix dg4599.pdf Description: IC SWITCH SINGLE SPDT SC70-6
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SI7812DN-T1-GE3 SI7812DN-T1-GE3 Vishay Siliconix si7812dn.pdf Description: MOSFET N-CH 75V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 35 V
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SI7153DN-T1-GE3 SI7153DN-T1-GE3 Vishay Siliconix si7153dn.pdf Description: MOSFET P-CH 30V 18A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
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SI7153DN-T1-GE3 SI7153DN-T1-GE3 Vishay Siliconix si7153dn.pdf Description: MOSFET P-CH 30V 18A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
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SIS4604DN-T1-GE3 SIS4604DN-T1-GE3 Vishay Siliconix sis4604dn.pdf Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 33.7W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 44.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
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3000+0.67 EUR
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SIS4604DN-T1-GE3 SIS4604DN-T1-GE3 Vishay Siliconix sis4604dn.pdf Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 33.7W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 44.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
auf Bestellung 10520 Stücke:
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SQ3493EV-T1_GE3 Vishay Siliconix sq3493ev.pdf Description: MOSFET P-CH 20V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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SQ3493EV-T1_GE3 Vishay Siliconix sq3493ev.pdf Description: MOSFET P-CH 20V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5355 Stücke:
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10+2.09 EUR
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500+0.67 EUR
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SIS590DN-T1-GE3 SIS590DN-T1-GE3 Vishay Siliconix sis590dn.pdf Description: COMBO N- & P-CHANNEL 100 V (D-S)
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SIS590DN-T1-GE3 SIS590DN-T1-GE3 Vishay Siliconix sis590dn.pdf Description: COMBO N- & P-CHANNEL 100 V (D-S)
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11+2.01 EUR
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SI4155DY-T1-GE3 SI4155DY-T1-GE3 Vishay Siliconix si4155dy.pdf Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 13.6A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 15 V
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SI4155DY-T1-GE3 SI4155DY-T1-GE3 Vishay Siliconix si4155dy.pdf Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 13.6A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 15 V
auf Bestellung 2554 Stücke:
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SI4151DY-T1-GE3 SI4151DY-T1-GE3 Vishay Siliconix si4151dy.pdf Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 20.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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SI4151DY-T1-GE3 SI4151DY-T1-GE3 Vishay Siliconix si4151dy.pdf Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 20.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 3500 Stücke:
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6+3.53 EUR
10+2.26 EUR
100+1.52 EUR
500+1.2 EUR
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SQJ403EP-T1_GE3 Vishay Siliconix sqj403ep.pdf Description: MOSFET P-CH 30V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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3000+1.38 EUR
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SQJ403EP-T1_GE3 Vishay Siliconix sqj403ep.pdf Description: MOSFET P-CH 30V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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SQJA37EP-T1_BE3 SQJA37EP-T1_BE3 Vishay Siliconix sqja37ep.pdf Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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SQJA37EP-T1_BE3 SQJA37EP-T1_BE3 Vishay Siliconix sqja37ep.pdf Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
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SQJ407EP-T1_BE3 SQJ407EP-T1_BE3 Vishay Siliconix sqj407ep.pdf Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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SQJ407EP-T1_BE3 SQJ407EP-T1_BE3 Vishay Siliconix sqj407ep.pdf Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
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SQJ403BEEP-T1_BE3 SQJ403BEEP-T1_BE3 Vishay Siliconix sqj403beep.pdf Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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SQJ403BEEP-T1_BE3 SQJ403BEEP-T1_BE3 Vishay Siliconix sqj403beep.pdf Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
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SI4153DY-T1-GE3 SI4153DY-T1-GE3 Vishay Siliconix si4153dy.pdf Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.3A (Ta), 19.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
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SI4153DY-T1-GE3 SI4153DY-T1-GE3 Vishay Siliconix si4153dy.pdf Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.3A (Ta), 19.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
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SQJ464EP-T1_GE3 SQJ464EP-T1_GE3 Vishay Siliconix sqj464ep.pdf Description: MOSFET N-CH 60V 32A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
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6000+0.75 EUR
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SQJ464EP-T1_GE3 SQJ464EP-T1_GE3 Vishay Siliconix sqj464ep.pdf Description: MOSFET N-CH 60V 32A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 11585 Stücke:
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500+1.01 EUR
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SQJ409EP-T1_BE3 SQJ409EP-T1_BE3 Vishay Siliconix sqj409ep.pdf Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SQJ409EP-T1_BE3 SQJ409EP-T1_BE3 Vishay Siliconix sqj409ep.pdf Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 2690 Stücke:
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10+2.46 EUR
100+1.92 EUR
500+1.62 EUR
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SIHFR120-GE3 sihfr120.pdf
SIHFR120-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 100V
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 3330 Stücke:
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10+2.12 EUR
75+0.92 EUR
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SIHG052N60EF-GE3 sihg052n60ef.pdf
SIHG052N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 48A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 100 V
auf Bestellung 485 Stücke:
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SI1330EDL-T1-BE3 SI1330ED.pdf
SI1330EDL-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Produkt ist nicht verfügbar
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SI1330EDL-T1-BE3 SI1330ED.pdf
SI1330EDL-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
auf Bestellung 1782 Stücke:
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SI7230DN-T1-E3 si7230dn.pdf
SI7230DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9A PPAK 1212-8
Produkt ist nicht verfügbar
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SI7230DN-T1-E3 si7230dn.pdf
SI7230DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9A PPAK 1212-8
Produkt ist nicht verfügbar
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SQ2337ES-T1_BE3 sq2337es.pdf
SQ2337ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 2.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1.2A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 40 V
Qualification: AEC-Q101
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SQ2337ES-T1_BE3 sq2337es.pdf
SQ2337ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 2.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1.2A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 219618 Stücke:
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18+1.2 EUR
100+0.79 EUR
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SQ2303ES-T1_BE3 doc?67023
SQ2303ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.7A, 10V
Power Dissipation (Max): 1.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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6000+0.31 EUR
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SQ2303ES-T1_BE3 doc?67023
SQ2303ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.7A, 10V
Power Dissipation (Max): 1.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 9406 Stücke:
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SQ2301ES-T1_BE3 sq2301es.pdf
SQ2301ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 10 V
Qualification: AEC-Q101
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SQ2301ES-T1_BE3 sq2301es.pdf
SQ2301ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6038 Stücke:
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SQ2362ES-T1_BE3 sq2362es.pdf
SQ2362ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 2.4A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQ2362ES-T1_BE3 sq2362es.pdf
SQ2362ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 2.4A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQ2364EES-T1_BE3 sq2364ees.pdf
SQ2364EES-T1_BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2A, 4.5V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Qualification: AEC-Q101
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SQ2364EES-T1_BE3 sq2364ees.pdf
SQ2364EES-T1_BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2A, 4.5V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3873 Stücke:
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13+1.68 EUR
20+1.05 EUR
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SQ2398ES-T1_BE3 sq2398es.pdf
SQ2398ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 50 V
Qualification: AEC-Q101
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SQ2398ES-T1_BE3 sq2398es.pdf
SQ2398ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 9071 Stücke:
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SQ2309ES-T1_BE3
SQ2309ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 335mOhm @ 1.25A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.42 EUR
6000+0.39 EUR
9000+0.37 EUR
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SQ2361ES-T1_BE3 sq2361es.pdf
SQ2361ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 87000 Stücke:
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3000+0.49 EUR
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SQ2361ES-T1_BE3 sq2361es.pdf
SQ2361ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 89066 Stücke:
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11+1.99 EUR
17+1.24 EUR
100+0.81 EUR
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SQ2318AES-T1_BE3 sq2318aes.pdf
SQ2318AES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.42 EUR
6000+0.38 EUR
9000+0.36 EUR
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SQ2318AES-T1_BE3 sq2318aes.pdf
SQ2318AES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 48297 Stücke:
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AnzahlPrivatkunde
13+1.71 EUR
20+1.07 EUR
100+0.69 EUR
500+0.54 EUR
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SQ2351ES-T1_BE3 sq2351es.pdf
SQ2351ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.2A SOT23-3
Produkt ist nicht verfügbar
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SQ2351ES-T1_BE3 sq2351es.pdf
SQ2351ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.2A SOT23-3
Produkt ist nicht verfügbar
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SQ2315ES-T1_BE3 sq2315es.pdf
SQ2315ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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SQ2315ES-T1_BE3 sq2315es.pdf
SQ2315ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
auf Bestellung 5181 Stücke:
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14+1.55 EUR
22+0.98 EUR
100+0.63 EUR
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IRFP460HPBF irfp460hpbf.pdf
IRFP460HPBF
Hersteller: Vishay Siliconix
Description: POWER MOSFET TO-247AC, 270 M @ 1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3208 pF @ 100 V
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SQD45P03-12-T4_GE3 sqd45p03.pdf
SQD45P03-12-T4_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A TO252AA
Produkt ist nicht verfügbar
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SI7116BDN-T1-GE3
SI7116BDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 18.4A/65A PPAK
Produkt ist nicht verfügbar
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SI7116BDN-T1-GE3
SI7116BDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 18.4A/65A PPAK
Produkt ist nicht verfügbar
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DG4599DL-T1-E3 dg4599.pdf
DG4599DL-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SINGLE SPDT SC70-6
Produkt ist nicht verfügbar
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DG4599DL-T1-E3 dg4599.pdf
DG4599DL-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SINGLE SPDT SC70-6
Produkt ist nicht verfügbar
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SI7812DN-T1-GE3 si7812dn.pdf
SI7812DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 35 V
auf Bestellung 45000 Stücke:
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AnzahlPrivatkunde
3000+1.63 EUR
6000+1.54 EUR
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SI7153DN-T1-GE3 si7153dn.pdf
SI7153DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 18A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
3000+0.48 EUR
6000+0.44 EUR
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SI7153DN-T1-GE3 si7153dn.pdf
SI7153DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 18A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
auf Bestellung 6528 Stücke:
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11+1.95 EUR
18+1.21 EUR
100+0.8 EUR
500+0.61 EUR
1000+0.56 EUR
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SIS4604DN-T1-GE3 sis4604dn.pdf
SIS4604DN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 33.7W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 44.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.67 EUR
6000+0.62 EUR
9000+0.6 EUR
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SIS4604DN-T1-GE3 sis4604dn.pdf
SIS4604DN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 33.7W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 44.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
auf Bestellung 10520 Stücke:
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AnzahlPrivatkunde
9+2.57 EUR
13+1.62 EUR
100+1.07 EUR
500+0.84 EUR
1000+0.76 EUR
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SQ3493EV-T1_GE3 sq3493ev.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
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SQ3493EV-T1_GE3 sq3493ev.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5355 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.09 EUR
16+1.32 EUR
100+0.87 EUR
500+0.67 EUR
1000+0.61 EUR
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SIS590DN-T1-GE3 sis590dn.pdf
SIS590DN-T1-GE3
Hersteller: Vishay Siliconix
Description: COMBO N- & P-CHANNEL 100 V (D-S)
Produkt ist nicht verfügbar
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SIS590DN-T1-GE3 sis590dn.pdf
SIS590DN-T1-GE3
Hersteller: Vishay Siliconix
Description: COMBO N- & P-CHANNEL 100 V (D-S)
auf Bestellung 49 Stücke:
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10+2.24 EUR
11+2.01 EUR
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SI4155DY-T1-GE3 si4155dy.pdf
SI4155DY-T1-GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 13.6A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 15 V
auf Bestellung 2500 Stücke:
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2500+0.61 EUR
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SI4155DY-T1-GE3 si4155dy.pdf
SI4155DY-T1-GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 13.6A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 15 V
auf Bestellung 2554 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.39 EUR
14+1.5 EUR
100+1.36 EUR
500+1.32 EUR
1000+1.21 EUR
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SI4151DY-T1-GE3 si4151dy.pdf
SI4151DY-T1-GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 20.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
2500+0.99 EUR
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SI4151DY-T1-GE3 si4151dy.pdf
SI4151DY-T1-GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 20.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.53 EUR
10+2.26 EUR
100+1.52 EUR
500+1.2 EUR
1000+1.09 EUR
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SQJ403EP-T1_GE3 sqj403ep.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.38 EUR
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SQJ403EP-T1_GE3 sqj403ep.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3652 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.83 EUR
10+2.65 EUR
100+2.01 EUR
500+1.61 EUR
1000+1.48 EUR
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SQJA37EP-T1_BE3 sqja37ep.pdf
SQJA37EP-T1_BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
3000+0.65 EUR
6000+0.62 EUR
Mindestbestellmenge: 3000 Stücke
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SQJA37EP-T1_BE3 sqja37ep.pdf
SQJA37EP-T1_BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.71 EUR
15+1.48 EUR
100+1.02 EUR
500+0.86 EUR
1000+0.73 EUR
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SQJ407EP-T1_BE3 sqj407ep.pdf
SQJ407EP-T1_BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.13 EUR
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SQJ407EP-T1_BE3 sqj407ep.pdf
SQJ407EP-T1_BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 5950 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.75 EUR
10+2.24 EUR
100+1.74 EUR
500+1.48 EUR
1000+1.2 EUR
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SQJ403BEEP-T1_BE3 sqj403beep.pdf
SQJ403BEEP-T1_BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SQJ403BEEP-T1_BE3 sqj403beep.pdf
SQJ403BEEP-T1_BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 2673 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.88 EUR
10+2.48 EUR
100+1.68 EUR
500+1.34 EUR
1000+1.27 EUR
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SI4153DY-T1-GE3 si4153dy.pdf
SI4153DY-T1-GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.3A (Ta), 19.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
auf Bestellung 7500 Stücke:
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2500+0.49 EUR
5000+0.45 EUR
7500+0.44 EUR
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SI4153DY-T1-GE3 si4153dy.pdf
SI4153DY-T1-GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.3A (Ta), 19.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
auf Bestellung 9914 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.93 EUR
18+1.21 EUR
100+0.8 EUR
500+0.62 EUR
1000+0.56 EUR
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SQJ464EP-T1_GE3 sqj464ep.pdf
SQJ464EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 32A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.81 EUR
6000+0.75 EUR
9000+0.73 EUR
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SQJ464EP-T1_GE3 sqj464ep.pdf
SQJ464EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 32A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 11585 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.06 EUR
11+1.93 EUR
100+1.29 EUR
500+1.01 EUR
1000+0.92 EUR
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SQJ409EP-T1_BE3 sqj409ep.pdf
SQJ409EP-T1_BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SQJ409EP-T1_BE3 sqj409ep.pdf
SQJ409EP-T1_BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 2690 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.01 EUR
10+2.46 EUR
100+1.92 EUR
500+1.62 EUR
1000+1.32 EUR
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