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Name: SQ2315ES-T1_BE3
Brand: Vishay Siliconix
SKU: 13614438-3
Price: 930.00 EUR
Availability: InStock

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SQ2351ES-T1_BE3

Vishay Siliconix

Description: MOSFET P-CH 20V 3.2A SOT23-3

Produkt ist nicht verfügbar

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SQ2315ES-T1_BE3

Vishay Siliconix

Description: MOSFET P-CH 12V 5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)

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SQ2315ES-T1_BE3

Vishay Siliconix

Description: MOSFET P-CH 12V 5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount

auf Bestellung 5181 Stücke:

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22+	0.98 EUR
100+	0.63 EUR
500+	0.49 EUR
1000+	0.44 EUR

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IRFP460HPBF

Vishay Siliconix

Description: POWER MOSFET TO-247AC, 270 M @ 1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3208 pF @ 100 V

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SQD45P03-12-T4_GE3

Vishay Siliconix

Description: MOSFET P-CH 30V 50A TO252AA

Produkt ist nicht verfügbar

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SI7116BDN-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 40V 18.4A/65A PPAK

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SI7116BDN-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 40V 18.4A/65A PPAK

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DG4599DL-T1-E3

Vishay Siliconix

Description: IC SWITCH SINGLE SPDT SC70-6

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DG4599DL-T1-E3

Vishay Siliconix

Description: IC SWITCH SINGLE SPDT SC70-6

Produkt ist nicht verfügbar

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SI7812DN-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 75V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 35 V

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6000+	1.54 EUR

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SI7153DN-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 30V 18A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V

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6000+	0.44 EUR

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SI7153DN-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 30V 18A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V

auf Bestellung 6528 Stücke:

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18+	1.21 EUR
100+	0.8 EUR
500+	0.61 EUR
1000+	0.56 EUR

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SIS4604DN-T1-GE3

Vishay Siliconix

Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 33.7W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 44.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V

auf Bestellung 9000 Stücke:

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6000+	0.62 EUR
9000+	0.6 EUR

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SIS4604DN-T1-GE3

Vishay Siliconix

Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 33.7W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 44.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)

auf Bestellung 10520 Stücke:

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13+	1.62 EUR
100+	1.07 EUR
500+	0.84 EUR
1000+	0.76 EUR

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SQ3493EV-T1_GE3

Vishay Siliconix

Description: MOSFET P-CH 20V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101

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SQ3493EV-T1_GE3

Vishay Siliconix

Description: MOSFET P-CH 20V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 5355 Stücke:

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16+	1.32 EUR
100+	0.87 EUR
500+	0.67 EUR
1000+	0.61 EUR

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SIS590DN-T1-GE3

Vishay Siliconix

Description: COMBO N- & P-CHANNEL 100 V (D-S)

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SIS590DN-T1-GE3

Vishay Siliconix

Description: COMBO N- & P-CHANNEL 100 V (D-S)

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11+	2.01 EUR

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SI4155DY-T1-GE3

Vishay Siliconix

Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 13.6A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 15 V

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SI4155DY-T1-GE3

Vishay Siliconix

Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 13.6A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 15 V

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14+	1.5 EUR
100+	1.36 EUR
500+	1.32 EUR
1000+	1.21 EUR

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SI4151DY-T1-GE3

Vishay Siliconix

Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 20.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)

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SI4151DY-T1-GE3

Vishay Siliconix

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10+	2.26 EUR
100+	1.52 EUR
500+	1.2 EUR
1000+	1.09 EUR

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SQJ403EP-T1_GE3

Vishay Siliconix

Description: MOSFET P-CH 30V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive

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SQJ403EP-T1_GE3

Vishay Siliconix

Description: MOSFET P-CH 30V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive

auf Bestellung 3652 Stücke:

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10+	2.65 EUR
100+	2.01 EUR
500+	1.61 EUR
1000+	1.48 EUR

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SQJA37EP-T1_BE3

Vishay Siliconix

Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

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6000+	0.62 EUR

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SQJA37EP-T1_BE3

Vishay Siliconix

Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive

auf Bestellung 6000 Stücke:

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13+	1.71 EUR
15+	1.48 EUR
100+	1.02 EUR
500+	0.86 EUR
1000+	0.73 EUR

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SQJ407EP-T1_BE3

Vishay Siliconix

Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)

auf Bestellung 3000 Stücke:

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3000+	1.13 EUR

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SQJ407EP-T1_BE3

Vishay Siliconix

auf Bestellung 5950 Stücke:

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8+	2.75 EUR
10+	2.24 EUR
100+	1.74 EUR
500+	1.48 EUR
1000+	1.2 EUR

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SQJ403BEEP-T1_BE3

Vishay Siliconix

Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)

Produkt ist nicht verfügbar

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SQJ403BEEP-T1_BE3

Vishay Siliconix

auf Bestellung 2673 Stücke:

Lieferzeit 10-14 Tag (e)

6+	3.88 EUR
10+	2.48 EUR
100+	1.68 EUR
500+	1.34 EUR
1000+	1.27 EUR

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SI4153DY-T1-GE3

Vishay Siliconix

Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.3A (Ta), 19.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V

auf Bestellung 7500 Stücke:

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5000+	0.45 EUR
7500+	0.44 EUR

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SI4153DY-T1-GE3

Vishay Siliconix

Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.3A (Ta), 19.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V

auf Bestellung 9914 Stücke:

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11+	1.93 EUR
18+	1.21 EUR
100+	0.8 EUR
500+	0.62 EUR
1000+	0.56 EUR

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SQJ464EP-T1_GE3

Vishay Siliconix

Description: MOSFET N-CH 60V 32A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)

auf Bestellung 9000 Stücke:

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3000+	0.81 EUR
6000+	0.75 EUR
9000+	0.73 EUR

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SQJ464EP-T1_GE3

Vishay Siliconix

auf Bestellung 11585 Stücke:

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7+	3.06 EUR
11+	1.93 EUR
100+	1.29 EUR
500+	1.01 EUR
1000+	0.92 EUR

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SQJ409EP-T1_BE3

Vishay Siliconix

Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)

Produkt ist nicht verfügbar

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SQJ409EP-T1_BE3

Vishay Siliconix

auf Bestellung 2690 Stücke:

Lieferzeit 10-14 Tag (e)

7+	3.01 EUR
10+	2.46 EUR
100+	1.92 EUR
500+	1.62 EUR
1000+	1.32 EUR

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SQJ409EP-T2_GE3

Vishay Siliconix

Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 39000 Stücke:

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3000+	1.08 EUR
6000+	1.01 EUR
9000+	0.98 EUR
15000+	0.96 EUR

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SQJ409EP-T2_GE3

Vishay Siliconix

Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 39805 Stücke:

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6+	3.88 EUR
10+	2.48 EUR
100+	1.68 EUR
500+	1.33 EUR
1000+	1.23 EUR

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SIC779ACD-T1-GE3

Vishay Siliconix

Description: IC HALF BRIDGE DRIVER 35A PPAK
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP66-40
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Current - Output / Channel: 35A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP66-40
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)

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SI3460BDV-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 20V 8A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)

auf Bestellung 3000 Stücke:

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SI3460BDV-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 20V 8A 6TSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

auf Bestellung 3000 Stücke:

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13+	1.68 EUR
15+	1.46 EUR
100+	1.01 EUR
500+	0.84 EUR
1000+	0.71 EUR

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SIC469EVB-E

Vishay Siliconix

Description: EVAL BOARD FOR SIC469
Packaging: Box
Voltage - Output: 0.8V ~ 15V
Voltage - Input: 4.5V ~ 60V
Current - Output: 2A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC469
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active

auf Bestellung 1 Stücke:

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SIC462EVB-A

Vishay Siliconix

Description: EVAL BOARD FOR SIC462
Packaging: Box
Voltage - Output: 0.8V ~ 55V
Voltage - Input: 4.5V ~ 60V
Current - Output: 6A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC462
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active

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SIC464EVB-B

Vishay Siliconix

Description: EVAL BOARD FOR SIC464
Packaging: Box
Voltage - Output: 0.8V ~ 55V
Voltage - Input: 4.5V ~ 60V
Current - Output: 2A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC464
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active

auf Bestellung 2 Stücke:

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SIC463EVB-B

Vishay Siliconix

Description: EVAL BOARD FOR SIC463
Packaging: Box
Voltage - Output: 0.8V ~ 55V
Voltage - Input: 4.5V ~ 60V
Current - Output: 4A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC463
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active

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SIC466EVB-D

Vishay Siliconix

Description: EVAL BOARD FOR SIC466
Packaging: Box
Voltage - Output: 0.8V ~ 15V
Voltage - Input: 4.5V ~ 60V
Current - Output: 10A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC466
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active

auf Bestellung 1 Stücke:

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1+	71.82 EUR

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SI2333DS-T1-BE3

Vishay Siliconix

Description: P-CHANNEL 12-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V

Produkt ist nicht verfügbar

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SI2333DS-T1-BE3

Vishay Siliconix

Description: P-CHANNEL 12-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V

Produkt ist nicht verfügbar

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SI2333CDS-T1-BE3

Vishay Siliconix

Description: P-CHANNEL 12-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V

Produkt ist nicht verfügbar

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SI2333CDS-T1-BE3

Vishay Siliconix

Description: P-CHANNEL 12-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V

auf Bestellung 555 Stücke:

Lieferzeit 10-14 Tag (e)

11+	2.03 EUR
17+	1.27 EUR
100+	0.83 EUR
500+	0.64 EUR

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SQJ465EP-T1_GE3

Vishay Siliconix

Description: MOSFET P-CH 60V 8A PPAK SO-8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V, 1.17mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TA)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)

auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	1.02 EUR
6000+	0.98 EUR

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SQJ465EP-T1_GE3

Vishay Siliconix

auf Bestellung 8287 Stücke:

Lieferzeit 10-14 Tag (e)

9+	2.48 EUR
11+	2.02 EUR
100+	1.57 EUR
500+	1.33 EUR
1000+	1.08 EUR

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SQ4431EY-T1_GE3

Vishay Siliconix

Description: MOSFET P-CH 30V 10.8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)

auf Bestellung 2500 Stücke:

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2500+	0.83 EUR

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SQ4431EY-T1_GE3

Vishay Siliconix

auf Bestellung 7383 Stücke:

Lieferzeit 10-14 Tag (e)

11+	1.96 EUR
12+	1.76 EUR
100+	1.37 EUR
500+	1.13 EUR
1000+	0.89 EUR

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SQSA82CENW-T1_GE3

Vishay Siliconix

Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8W
Packaging: Tape & Reel (TR)

auf Bestellung 9000 Stücke:

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3000+	0.43 EUR
6000+	0.39 EUR
9000+	0.38 EUR

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SQSA82CENW-T1_GE3

Vishay Siliconix

auf Bestellung 9756 Stücke:

Lieferzeit 10-14 Tag (e)

12+	1.8 EUR
19+	1.11 EUR
100+	0.73 EUR
500+	0.56 EUR
1000+	0.5 EUR

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SIHB16N50C-E3

Vishay Siliconix

Description: MOSFET N-CH 500V 16A D2PAK
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)

Produkt ist nicht verfügbar

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IRF840HPBF

Vishay Siliconix

Description: POWER MOSFET TO220AB, 850 M @ 10
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1059 pF @ 25 V

auf Bestellung 7 Stücke:

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6+	4.16 EUR

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SMM2348ES-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V

Produkt ist nicht verfügbar

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SQ3456CEV-T1_GE3

Vishay Siliconix

Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)

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3000+	0.39 EUR

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SQ2351ES-T1_BE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.2A SOT23-3

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SQ2315ES-T1_BE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)

auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3000+	0.37 EUR

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SQ2315ES-T1_BE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount

auf Bestellung 5181 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
14+	1.55 EUR
22+	0.98 EUR
100+	0.63 EUR
500+	0.49 EUR
1000+	0.44 EUR

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IRFP460HPBF

Hersteller: Vishay Siliconix
Description: POWER MOSFET TO-247AC, 270 M @ 1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3208 pF @ 100 V

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SQD45P03-12-T4_GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A TO252AA

Produkt ist nicht verfügbar

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SI7116BDN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 18.4A/65A PPAK

Produkt ist nicht verfügbar

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SI7116BDN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 18.4A/65A PPAK

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DG4599DL-T1-E3

Hersteller: Vishay Siliconix
Description: IC SWITCH SINGLE SPDT SC70-6

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DG4599DL-T1-E3

Hersteller: Vishay Siliconix
Description: IC SWITCH SINGLE SPDT SC70-6

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SI7812DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 35 V

auf Bestellung 45000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3000+	1.63 EUR
6000+	1.54 EUR

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SI7153DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 18A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V

auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3000+	0.48 EUR
6000+	0.44 EUR

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SI7153DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 18A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V

auf Bestellung 6528 Stücke:

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Anzahl	Privatkunde
11+	1.95 EUR
18+	1.21 EUR
100+	0.8 EUR
500+	0.61 EUR
1000+	0.56 EUR

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SIS4604DN-T1-GE3

Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 33.7W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 44.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V

auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3000+	0.67 EUR
6000+	0.62 EUR
9000+	0.6 EUR

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SIS4604DN-T1-GE3

Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 33.7W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 44.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)

auf Bestellung 10520 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
9+	2.57 EUR
13+	1.62 EUR
100+	1.07 EUR
500+	0.84 EUR
1000+	0.76 EUR

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SQ3493EV-T1_GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 2400 Stücke:

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SQ3493EV-T1_GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 5355 Stücke:

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Anzahl	Privatkunde
10+	2.09 EUR
16+	1.32 EUR
100+	0.87 EUR
500+	0.67 EUR
1000+	0.61 EUR

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SIS590DN-T1-GE3

Hersteller: Vishay Siliconix
Description: COMBO N- & P-CHANNEL 100 V (D-S)

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SIS590DN-T1-GE3

Hersteller: Vishay Siliconix
Description: COMBO N- & P-CHANNEL 100 V (D-S)

auf Bestellung 49 Stücke:

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Anzahl	Privatkunde
10+	2.24 EUR
11+	2.01 EUR

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SI4155DY-T1-GE3

Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 13.6A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 15 V

auf Bestellung 2500 Stücke:

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2500+	0.61 EUR

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SI4155DY-T1-GE3

Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 13.6A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 15 V

auf Bestellung 2554 Stücke:

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Anzahl	Privatkunde
9+	2.39 EUR
14+	1.5 EUR
100+	1.36 EUR
500+	1.32 EUR
1000+	1.21 EUR

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SI4151DY-T1-GE3

Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 20.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)

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Anzahl	Privatkunde
2500+	0.99 EUR

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SI4151DY-T1-GE3

auf Bestellung 3500 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
6+	3.53 EUR
10+	2.26 EUR
100+	1.52 EUR
500+	1.2 EUR
1000+	1.09 EUR

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SQJ403EP-T1_GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive

auf Bestellung 3000 Stücke:

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Anzahl	Privatkunde
3000+	1.38 EUR

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SQJ403EP-T1_GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive

auf Bestellung 3652 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
6+	3.83 EUR
10+	2.65 EUR
100+	2.01 EUR
500+	1.61 EUR
1000+	1.48 EUR

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SQJA37EP-T1_BE3

Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3000+	0.65 EUR
6000+	0.62 EUR

Mindestbestellmenge: 3000 Stücke

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SQJA37EP-T1_BE3

Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive

auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
13+	1.71 EUR
15+	1.48 EUR
100+	1.02 EUR
500+	0.86 EUR
1000+	0.73 EUR

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SQJ407EP-T1_BE3

Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)

auf Bestellung 3000 Stücke:

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Anzahl	Privatkunde
3000+	1.13 EUR

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SQJ407EP-T1_BE3

auf Bestellung 5950 Stücke:

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Anzahl	Privatkunde
8+	2.75 EUR
10+	2.24 EUR
100+	1.74 EUR
500+	1.48 EUR
1000+	1.2 EUR

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SQJ403BEEP-T1_BE3

Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)

Produkt ist nicht verfügbar

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SQJ403BEEP-T1_BE3

auf Bestellung 2673 Stücke:

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Anzahl	Privatkunde
6+	3.88 EUR
10+	2.48 EUR
100+	1.68 EUR
500+	1.34 EUR
1000+	1.27 EUR

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SI4153DY-T1-GE3

Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.3A (Ta), 19.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V

auf Bestellung 7500 Stücke:

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2500+	0.49 EUR
5000+	0.45 EUR
7500+	0.44 EUR

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SI4153DY-T1-GE3

Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.3A (Ta), 19.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V

auf Bestellung 9914 Stücke:

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Anzahl	Privatkunde
11+	1.93 EUR
18+	1.21 EUR
100+	0.8 EUR
500+	0.62 EUR
1000+	0.56 EUR

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SQJ464EP-T1_GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 32A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)

auf Bestellung 9000 Stücke:

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Anzahl	Privatkunde
3000+	0.81 EUR
6000+	0.75 EUR
9000+	0.73 EUR

Mindestbestellmenge: 3000 Stücke

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SQJ464EP-T1_GE3

auf Bestellung 11585 Stücke:

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Anzahl	Privatkunde
7+	3.06 EUR
11+	1.93 EUR
100+	1.29 EUR
500+	1.01 EUR
1000+	0.92 EUR

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SQJ409EP-T1_BE3

Hersteller: Vishay Siliconix
Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)

Produkt ist nicht verfügbar

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SQJ409EP-T1_BE3

auf Bestellung 2690 Stücke:

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Anzahl	Privatkunde
7+	3.01 EUR
10+	2.46 EUR
100+	1.92 EUR
500+	1.62 EUR
1000+	1.32 EUR

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SQJ409EP-T2_GE3

Hersteller: Vishay Siliconix
Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 39000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3000+	1.08 EUR
6000+	1.01 EUR
9000+	0.98 EUR
15000+	0.96 EUR

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SQJ409EP-T2_GE3

Hersteller: Vishay Siliconix
Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 39805 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
6+	3.88 EUR
10+	2.48 EUR
100+	1.68 EUR
500+	1.33 EUR
1000+	1.23 EUR

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SIC779ACD-T1-GE3

Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 35A PPAK
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP66-40
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Current - Output / Channel: 35A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP66-40
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)

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SI3460BDV-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)

auf Bestellung 3000 Stücke:

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Anzahl	Privatkunde
3000+	0.64 EUR

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SI3460BDV-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

auf Bestellung 3000 Stücke:

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Anzahl	Privatkunde
13+	1.68 EUR
15+	1.46 EUR
100+	1.01 EUR
500+	0.84 EUR
1000+	0.71 EUR

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SIC469EVB-E

Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC469
Packaging: Box
Voltage - Output: 0.8V ~ 15V
Voltage - Input: 4.5V ~ 60V
Current - Output: 2A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC469
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active

auf Bestellung 1 Stücke:

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Anzahl	Privatkunde
1+	74.24 EUR

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SIC462EVB-A

Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC462
Packaging: Box
Voltage - Output: 0.8V ~ 55V
Voltage - Input: 4.5V ~ 60V
Current - Output: 6A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC462
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active

auf Bestellung 1 Stücke:

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Anzahl	Privatkunde
1+	74.24 EUR

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SIC464EVB-B

Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC464
Packaging: Box
Voltage - Output: 0.8V ~ 55V
Voltage - Input: 4.5V ~ 60V
Current - Output: 2A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC464
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active

auf Bestellung 2 Stücke:

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Anzahl	Privatkunde
1+	74.24 EUR

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SIC463EVB-B

Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC463
Packaging: Box
Voltage - Output: 0.8V ~ 55V
Voltage - Input: 4.5V ~ 60V
Current - Output: 4A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC463
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active

Produkt ist nicht verfügbar

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SIC466EVB-D

Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC466
Packaging: Box
Voltage - Output: 0.8V ~ 15V
Voltage - Input: 4.5V ~ 60V
Current - Output: 10A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC466
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active

auf Bestellung 1 Stücke:

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Anzahl	Privatkunde
1+	71.82 EUR

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SI2333DS-T1-BE3

Hersteller: Vishay Siliconix
Description: P-CHANNEL 12-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V

Produkt ist nicht verfügbar

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SI2333DS-T1-BE3

Hersteller: Vishay Siliconix
Description: P-CHANNEL 12-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V

Produkt ist nicht verfügbar

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SI2333CDS-T1-BE3

Hersteller: Vishay Siliconix
Description: P-CHANNEL 12-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V

Produkt ist nicht verfügbar

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SI2333CDS-T1-BE3

Hersteller: Vishay Siliconix
Description: P-CHANNEL 12-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V

auf Bestellung 555 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
11+	2.03 EUR
17+	1.27 EUR
100+	0.83 EUR
500+	0.64 EUR

Mindestbestellmenge: 11 Stücke

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SQJ465EP-T1_GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8A PPAK SO-8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V, 1.17mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TA)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)

auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3000+	1.02 EUR
6000+	0.98 EUR

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SQJ465EP-T1_GE3

auf Bestellung 8287 Stücke:

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Anzahl	Privatkunde
9+	2.48 EUR
11+	2.02 EUR
100+	1.57 EUR
500+	1.33 EUR
1000+	1.08 EUR

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SQ4431EY-T1_GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 10.8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)

auf Bestellung 2500 Stücke:

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Anzahl	Privatkunde
2500+	0.83 EUR

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SQ4431EY-T1_GE3

auf Bestellung 7383 Stücke:

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Anzahl	Privatkunde
11+	1.96 EUR
12+	1.76 EUR
100+	1.37 EUR
500+	1.13 EUR
1000+	0.89 EUR

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SQSA82CENW-T1_GE3

Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8W
Packaging: Tape & Reel (TR)

auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3000+	0.43 EUR
6000+	0.39 EUR
9000+	0.38 EUR

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SQSA82CENW-T1_GE3

auf Bestellung 9756 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
12+	1.8 EUR
19+	1.11 EUR
100+	0.73 EUR
500+	0.56 EUR
1000+	0.5 EUR

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SIHB16N50C-E3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 16A D2PAK
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)

Produkt ist nicht verfügbar

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IRF840HPBF

Hersteller: Vishay Siliconix
Description: POWER MOSFET TO220AB, 850 M @ 10
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1059 pF @ 25 V

auf Bestellung 7 Stücke:

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Anzahl	Privatkunde
6+	4.16 EUR

Mindestbestellmenge: 6 Stücke

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SMM2348ES-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V

Produkt ist nicht verfügbar

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SQ3456CEV-T1_GE3

Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)

auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3000+	0.39 EUR

Mindestbestellmenge: 3000 Stücke

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