Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (11092) > Seite 162 nach 185
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||
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|  | SQJB46ELP-T1_BE3 | Vishay Siliconix |  Description: DUAL N-CHANNEL 40-V (D-S) 175C M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|  | SQJB46ELP-T1_BE3 | Vishay Siliconix |  Description: DUAL N-CHANNEL 40-V (D-S) 175C M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|  | SQJB60EP-T1_BE3 | Vishay Siliconix |  Description: DUAL N-CHANNEL 60-V (D-S) 175C M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|  | SQJB60EP-T1_BE3 | Vishay Siliconix |  Description: DUAL N-CHANNEL 60-V (D-S) 175C M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|  | SQJ844AEP-T1_BE3 | Vishay Siliconix |  Description: DUAL N-CHANNEL 30-V (D-S) 175C M Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 48W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|  | SQJ844AEP-T1_BE3 | Vishay Siliconix |  Description: DUAL N-CHANNEL 30-V (D-S) 175C M Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 48W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|  | SQJ952EP-T1_BE3 | Vishay Siliconix |  Description: DUAL N-CHANNEL 60-V (D-S) 175C M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|  | SQJ952EP-T1_BE3 | Vishay Siliconix |  Description: DUAL N-CHANNEL 60-V (D-S) 175C M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|  | SQJB00EP-T1_BE3 | Vishay Siliconix |  Description: DUAL N-CHANNEL 60-V (D-S) 175C M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|  | SQJB00EP-T1_BE3 | Vishay Siliconix |  Description: DUAL N-CHANNEL 60-V (D-S) 175C M | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|   | SQJB40EP-T1_BE3 | Vishay Siliconix |  Description: MOSFET 2N-CH 40V 30A PPAK SO8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 34W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 9000 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SQJB40EP-T1_BE3 | Vishay Siliconix |  Description: MOSFET 2N-CH 40V 30A PPAK SO8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 34W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 9000 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SIC471ED-T1-GE3 | Vishay Siliconix |  Description: IC REG BCK ADJ POWERPAK MLP55-27 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® MLP55-27 Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 12A Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 2MHz Voltage - Input (Max): 55V Topology: Buck Supplier Device Package: PowerPAK® MLP55-27 Synchronous Rectifier: Yes Voltage - Output (Max): 50.6V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 0.8V Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|   | SIC471ED-T1-GE3 | Vishay Siliconix |  Description: IC REG BCK ADJ POWERPAK MLP55-27 Packaging: Cut Tape (CT) Package / Case: PowerPAK® MLP55-27 Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 12A Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 2MHz Voltage - Input (Max): 55V Topology: Buck Supplier Device Package: PowerPAK® MLP55-27 Synchronous Rectifier: Yes Voltage - Output (Max): 50.6V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 0.8V Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|   | SI2312CDS-T1-BE3 | Vishay Siliconix |  Description: N-CHANNEL 20-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc) Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V | auf Bestellung 15000 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SI2312CDS-T1-BE3 | Vishay Siliconix |  Description: N-CHANNEL 20-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc) Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V | auf Bestellung 16413 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SIC789CD-T1-GE3 | Vishay Siliconix |  Description: IC HALF BRIDGE DRIVER 60A PPAK Features: Bootstrap Circuit, Diode Emulation, Status Flag Packaging: Tape & Reel (TR) Package / Case: PowerPAK® MLP66-40 Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Applications: Synchronous Buck Converters Current - Output / Channel: 60A Technology: Power MOSFET Voltage - Load: 4.5V ~ 18V Supplier Device Package: PowerPAK® MLP66-40 Fault Protection: Shoot-Through, UVLO Load Type: Inductive Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|   | SIC789CD-T1-GE3 | Vishay Siliconix |  Description: IC HALF BRIDGE DRIVER 60A PPAK Features: Bootstrap Circuit, Diode Emulation, Status Flag Packaging: Cut Tape (CT) Package / Case: PowerPAK® MLP66-40 Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Applications: Synchronous Buck Converters Current - Output / Channel: 60A Technology: Power MOSFET Voltage - Load: 4.5V ~ 18V Supplier Device Package: PowerPAK® MLP66-40 Fault Protection: Shoot-Through, UVLO Load Type: Inductive Part Status: Active | auf Bestellung 1835 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SQJQ112ER-T1_GE3 | Vishay Siliconix |  Description: AUTOMOTIVE N-CHANNEL 100 V (D-S) Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 296A (Tc) Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2000 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SQJQ112ER-T1_GE3 | Vishay Siliconix |  Description: AUTOMOTIVE N-CHANNEL 100 V (D-S) Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 296A (Tc) Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2531 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SQJQ112E-T1_GE3 | Vishay Siliconix |  Description: AUTOMOTIVE N-CHANNEL 100 V (D-S) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 296A (Tc) Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2000 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SQJA80EP-T1_BE3 | Vishay Siliconix |  Description: N-CHANNEL 80-V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|   | SQJA80EP-T1_BE3 | Vishay Siliconix |  Description: N-CHANNEL 80-V (D-S) 175C MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|   | SQS460EN-T1_BE3 | Vishay Siliconix |  Description: MOSFET N-CH 60V 8A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 57000 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SQS460EN-T1_BE3 | Vishay Siliconix |  Description: MOSFET N-CH 60V 8A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 57855 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SIC468EVB-E | Vishay Siliconix |  Description: EVAL BOARD FOR SIC468 Packaging: Box Voltage - Output: 0.8V ~ 15V Voltage - Input: 4.5V ~ 60V Current - Output: 4A Contents: Board(s) Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: SIC468 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1 Non-Isolated Output Part Status: Active | auf Bestellung 1 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SIC431AEVB-A | Vishay Siliconix |  Description: EVAL BOARD FOR SIC431 Packaging: Box Voltage - Output: 0.6V ~ 20V Voltage - Input: 4.5V ~ 24V Current - Output: 24A Contents: Board(s) Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: SiC431 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1 Non-Isolated Output Part Status: Active | auf Bestellung 2 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SIC467EVB-D | Vishay Siliconix |  Description: EVAL BOARD FOR SIC467 Packaging: Box Voltage - Output: 0.8V ~ 15V Voltage - Input: 4.5V ~ 60V Current - Output: 6A Contents: Board(s) Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: SIC467 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1 Non-Isolated Output Part Status: Active | auf Bestellung 1 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SIC466ED-T1-GE3 | Vishay Siliconix |  Description: IC REG BCK ADJ POWERPAK MLP55-27 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® MLP55-27 Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 10A Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 100kHz ~ 2MHz Voltage - Input (Max): 60V Topology: Buck Supplier Device Package: PowerPAK® MLP55-27 Synchronous Rectifier: Yes Voltage - Output (Max): 15V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 0.8V Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|   | SIC466ED-T1-GE3 | Vishay Siliconix |  Description: IC REG BCK ADJ POWERPAK MLP55-27 Packaging: Cut Tape (CT) Package / Case: PowerPAK® MLP55-27 Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 10A Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 100kHz ~ 2MHz Voltage - Input (Max): 60V Topology: Buck Supplier Device Package: PowerPAK® MLP55-27 Synchronous Rectifier: Yes Voltage - Output (Max): 15V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 0.8V Part Status: Active | auf Bestellung 311 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SIC478ED-T1-GE3 | Vishay Siliconix |  Description: IC REG BCK ADJ POWERPAK MLP55-27 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® MLP55-27 Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 5A Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 100kHz ~ 2MHz Voltage - Input (Max): 55V Topology: Buck Supplier Device Package: PowerPAK® MLP55-27 Synchronous Rectifier: Yes Voltage - Output (Max): 24V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 0.8V Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|   | SIC478ED-T1-GE3 | Vishay Siliconix |  Description: IC REG BCK ADJ POWERPAK MLP55-27 Packaging: Cut Tape (CT) Package / Case: PowerPAK® MLP55-27 Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 5A Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 100kHz ~ 2MHz Voltage - Input (Max): 55V Topology: Buck Supplier Device Package: PowerPAK® MLP55-27 Synchronous Rectifier: Yes Voltage - Output (Max): 24V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 0.8V Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|   | SIC461EVB-A | Vishay Siliconix |  Description: EVAL BOARD FOR SIC461 Packaging: Box Voltage - Output: 3.3V, 5V or 12V Voltage - Input: 4.5V ~ 60V Current - Output: 10A Contents: Board(s) Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: SIC461 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1 Non-Isolated Output Part Status: Active | auf Bestellung 1 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SIC451EVB-A | Vishay Siliconix |  Description: EVAL BOARD FOR SIC451 Packaging: Box Voltage - Output: 0.3V ~ 12V Voltage - Input: 4.5V ~ 20V Current - Output: 25A Contents: Board(s) Regulator Topology: Buck Utilized IC / Part: SIC451 Main Purpose: DC/DC, Step Down Outputs and Type: 1 Non-Isolated Output Power - Output: 500mW | auf Bestellung 3 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SIC474EVB-B | Vishay Siliconix |  Description: EVAL BOARD FOR SIC474 Packaging: Box Voltage - Output: 0.8V ~ 50V Voltage - Input: 4.5V ~ 55V Current - Output: 3A Contents: Board(s) Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: SIC474 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1 Non-Isolated Output | auf Bestellung 1 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SIC473EVB-B | Vishay Siliconix |  Description: EVAL BOARD FOR SIC473 Packaging: Box Voltage - Output: 0.8V ~ 50V Voltage - Input: 4.5V ~ 55V Current - Output: 5A Contents: Board(s) Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: SIC473 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1 Non-Isolated Output Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|   | SIC472EVB-A | Vishay Siliconix |  Description: EVAL BOARD FOR SIC472 Packaging: Box Voltage - Output: 0.8V ~ 50V Voltage - Input: 4.5V ~ 55V Current - Output: 8A Contents: Board(s) Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: SIC472 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1 Non-Isolated Output | auf Bestellung 1 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SIC437AEVB-B | Vishay Siliconix |  Description: EVAL BOARD FOR SIC437 Packaging: Box Voltage - Output: 0.6V ~ 20V Voltage - Input: 4.5V ~ 28V Current - Output: 12A Contents: Board(s) Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: SiC437 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1 Non-Isolated Output Part Status: Active | auf Bestellung 1 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SIC431BEVB-A | Vishay Siliconix |  Description: EVAL BOARD FOR SIC431 Packaging: Box Voltage - Output: 0.6V ~ 20V Voltage - Input: 4.5V ~ 24V Current - Output: 24A Contents: Board(s) Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: SiC431 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1 Non-Isolated Output Part Status: Active | auf Bestellung 2 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SIC471EVB-A | Vishay Siliconix |  Description: EVAL BOARD FOR SIC471 Packaging: Box Voltage - Output: 0.8V ~ 50V Voltage - Input: 4.5V ~ 55V Current - Output: 12A Contents: Board(s) Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: SIC471 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1 Non-Isolated Output Part Status: Active | auf Bestellung 1 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | IRFR320PBF-BE3 | Vishay Siliconix |  Description: N-CHANNEL 400V Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SIC431EVB | Vishay Siliconix |  Description: 3-24V,24V MICROBUCK DEMOBOARD Packaging: Box Voltage - Output: 0.6V ~ 20V Voltage - Input: 3V ~ 24V Current - Output: 24A Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: SiC431 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|   | DG1408EEN-T1-GE4 | Vishay Siliconix |  Description: IC MUX 8:1 4.7OHM 16QFN Packaging: Tape & Reel (TR) Package / Case: 16-VQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 4.7Ohm -3db Bandwidth: 46MHz Supplier Device Package: 16-QFN (4x4) Voltage - Supply, Single (V+): 4.5V ~ 24V Voltage - Supply, Dual (V±): ±4.5V ~ 16.5V Charge Injection: 100pC Crosstalk: -64dB @ 1MHz Multiplexer/Demultiplexer Circuit: 8:1 Channel-to-Channel Matching (ΔRon): 200mOhm Switch Time (Ton, Toff) (Max): 150ns, 120ns Channel Capacitance (CS(off), CD(off)): 14pF, 89pF Current - Leakage (IS(off)) (Max): 200pA Part Status: Active Number of Circuits: 1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|   | DG1408EEN-T1-GE4 | Vishay Siliconix |  Description: IC MUX 8:1 4.7OHM 16QFN Packaging: Cut Tape (CT) Package / Case: 16-VQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 4.7Ohm -3db Bandwidth: 46MHz Supplier Device Package: 16-QFN (4x4) Voltage - Supply, Single (V+): 4.5V ~ 24V Voltage - Supply, Dual (V±): ±4.5V ~ 16.5V Charge Injection: 100pC Crosstalk: -64dB @ 1MHz Multiplexer/Demultiplexer Circuit: 8:1 Channel-to-Channel Matching (ΔRon): 200mOhm Switch Time (Ton, Toff) (Max): 150ns, 120ns Channel Capacitance (CS(off), CD(off)): 14pF, 89pF Current - Leakage (IS(off)) (Max): 200pA Part Status: Active Number of Circuits: 1 | auf Bestellung 2459 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SIP32434ADN-T1E4 | Vishay Siliconix |  Description: 6 A, 33 M, 2.8 V TO 23 V,EFUSE W Features: Latch Function, Power Good, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 10-VFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 33mOhm Input Type: Non-Inverting Voltage - Load: 2.8V ~ 23V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 6A Ratio - Input:Output: 1:1 Supplier Device Package: 10-DFN (3x3) Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO Part Status: Active | auf Bestellung 5000 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SIP32434ADN-T1E4 | Vishay Siliconix |  Description: 6 A, 33 M, 2.8 V TO 23 V,EFUSE W Features: Latch Function, Power Good, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 10-VFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 33mOhm Input Type: Non-Inverting Voltage - Load: 2.8V ~ 23V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 6A Ratio - Input:Output: 1:1 Supplier Device Package: 10-DFN (3x3) Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO Part Status: Active | auf Bestellung 6315 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SI3443DDV-T1-BE3 | Vishay Siliconix |  Description: P-CHANNEL 20-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 4.7A, 4.5V Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V | auf Bestellung 9000 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SI3443DDV-T1-BE3 | Vishay Siliconix |  Description: P-CHANNEL 20-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 4.7A, 4.5V Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V | auf Bestellung 11944 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SQM50N04-4m0L_GE3 | Vishay Siliconix |  Description: MOSFET N-CHANNEL 40V 50A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|   | SQD50N04_4M5LT4GE3 | Vishay Siliconix |  Description: MOSFET N-CH 40V 50A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|   | SIHH105N60EF-T1GE3 | Vishay Siliconix |  Description: EF SERIES POWER MOSFET WITH FAST Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 13A, 10V Power Dissipation (Max): 174W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2099 pF @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|   | SIHH105N60EF-T1GE3 | Vishay Siliconix |  Description: EF SERIES POWER MOSFET WITH FAST Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 13A, 10V Power Dissipation (Max): 174W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2099 pF @ 100 V | auf Bestellung 3009 Stücke:Lieferzeit 10-14 Tag (e) | 
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|  | SI3493BDV-T1-BE3 | Vishay Siliconix |  Description: P-CHANNEL 20-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V | auf Bestellung 6000 Stücke:Lieferzeit 10-14 Tag (e) | 
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|  | SI3493BDV-T1-BE3 | Vishay Siliconix |  Description: P-CHANNEL 20-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V | auf Bestellung 11586 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SIHFR120-GE3 | Vishay Siliconix |  Description: MOSFET N-CHANNEL 100V Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V | auf Bestellung 3012 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SIHG052N60EF-GE3 | Vishay Siliconix |  Description: MOSFET N-CH 600V 48A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 100 V | auf Bestellung 123 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SI1330EDL-T1-BE3 | Vishay Siliconix |  Description: MOSFET N-CH 60V 240MA SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-70-3 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|   | SI1330EDL-T1-BE3 | Vishay Siliconix |  Description: MOSFET N-CH 60V 240MA SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-70-3 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V | auf Bestellung 1782 Stücke:Lieferzeit 10-14 Tag (e) | 
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|  | SI7230DN-T1-E3 | Vishay Siliconix |  Description: MOSFET N-CH 30V 9A PPAK 1212-8 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|  | SI7230DN-T1-E3 | Vishay Siliconix |  Description: MOSFET N-CH 30V 9A PPAK 1212-8 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | 
| SQJB46ELP-T1_BE3 |  | 
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 40-V (D-S) 175C M
    Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SQJB46ELP-T1_BE3 |  | 
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 40-V (D-S) 175C M
    Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SQJB60EP-T1_BE3 |  | 
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
    Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SQJB60EP-T1_BE3 |  | 
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
    Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SQJ844AEP-T1_BE3 |  | 
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
    Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SQJ844AEP-T1_BE3 |  | 
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
    Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SQJ952EP-T1_BE3 |  | 
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
    Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SQJ952EP-T1_BE3 |  | 
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
    Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SQJB00EP-T1_BE3 |  | 
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
    Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SQJB00EP-T1_BE3 |  | 
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
    Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SQJB40EP-T1_BE3 |  | 
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Qualification: AEC-Q101
    Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 3000+ | 0.75 EUR | 
| 6000+ | 0.71 EUR | 
| 9000+ | 0.68 EUR | 
| SQJB40EP-T1_BE3 |  | 
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Qualification: AEC-Q101
    Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 10+ | 1.8 EUR | 
| 12+ | 1.48 EUR | 
| 100+ | 1.15 EUR | 
| 500+ | 0.98 EUR | 
| 1000+ | 0.79 EUR | 
| SIC471ED-T1-GE3 |  | 
Hersteller: Vishay Siliconix
Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 50.6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
    Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 50.6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SIC471ED-T1-GE3 |  | 
Hersteller: Vishay Siliconix
Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 50.6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
    Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 50.6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SI2312CDS-T1-BE3 |  | 
Hersteller: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
    Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 3000+ | 0.19 EUR | 
| 9000+ | 0.18 EUR | 
| SI2312CDS-T1-BE3 |  | 
Hersteller: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
    Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
auf Bestellung 16413 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 22+ | 0.81 EUR | 
| 31+ | 0.58 EUR | 
| 100+ | 0.41 EUR | 
| 500+ | 0.31 EUR | 
| 1000+ | 0.28 EUR | 
| SIC789CD-T1-GE3 |  | 
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 60A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
    Description: IC HALF BRIDGE DRIVER 60A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SIC789CD-T1-GE3 |  | 
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 60A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
    Description: IC HALF BRIDGE DRIVER 60A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 1835 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 4+ | 5.03 EUR | 
| 10+ | 4.52 EUR | 
| 25+ | 4.28 EUR | 
| 100+ | 3.71 EUR | 
| 250+ | 3.52 EUR | 
| 500+ | 3.15 EUR | 
| 1000+ | 2.66 EUR | 
| SQJQ112ER-T1_GE3 |  | 
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Qualification: AEC-Q101
    Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 2000+ | 2.91 EUR | 
| SQJQ112ER-T1_GE3 |  | 
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Qualification: AEC-Q101
    Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2531 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 3+ | 8.06 EUR | 
| 10+ | 5.34 EUR | 
| 100+ | 3.8 EUR | 
| 500+ | 3.14 EUR | 
| 1000+ | 2.93 EUR | 
| SQJQ112E-T1_GE3 |  | 
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Qualification: AEC-Q101
    Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 2000+ | 2.77 EUR | 
| SQJA80EP-T1_BE3 |  | 
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
    Description: N-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SQJA80EP-T1_BE3 |  | 
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
    Description: N-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SQS460EN-T1_BE3 |  | 
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Qualification: AEC-Q101
    Description: MOSFET N-CH 60V 8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 3000+ | 0.8 EUR | 
| 6000+ | 0.78 EUR | 
| SQS460EN-T1_BE3 |  | 
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Qualification: AEC-Q101
    Description: MOSFET N-CH 60V 8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 57855 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 8+ | 2.48 EUR | 
| 11+ | 1.75 EUR | 
| 100+ | 1.32 EUR | 
| 500+ | 1.04 EUR | 
| 1000+ | 0.95 EUR | 
| SIC468EVB-E |  | 
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC468
Packaging: Box
Voltage - Output: 0.8V ~ 15V
Voltage - Input: 4.5V ~ 60V
Current - Output: 4A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC468
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
    Description: EVAL BOARD FOR SIC468
Packaging: Box
Voltage - Output: 0.8V ~ 15V
Voltage - Input: 4.5V ~ 60V
Current - Output: 4A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC468
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 1+ | 62.39 EUR | 
| SIC431AEVB-A |  | 
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC431
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 4.5V ~ 24V
Current - Output: 24A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC431
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
    Description: EVAL BOARD FOR SIC431
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 4.5V ~ 24V
Current - Output: 24A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC431
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 1+ | 62.39 EUR | 
| SIC467EVB-D |  | 
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC467
Packaging: Box
Voltage - Output: 0.8V ~ 15V
Voltage - Input: 4.5V ~ 60V
Current - Output: 6A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC467
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
    Description: EVAL BOARD FOR SIC467
Packaging: Box
Voltage - Output: 0.8V ~ 15V
Voltage - Input: 4.5V ~ 60V
Current - Output: 6A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC467
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 1+ | 62.39 EUR | 
| SIC466ED-T1-GE3 |  | 
Hersteller: Vishay Siliconix
Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 10A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 60V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 15V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
    Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 10A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 60V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 15V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SIC466ED-T1-GE3 |  | 
Hersteller: Vishay Siliconix
Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 10A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 60V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 15V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
    Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 10A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 60V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 15V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 311 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 3+ | 7.99 EUR | 
| 10+ | 6.1 EUR | 
| 25+ | 5.63 EUR | 
| 100+ | 5.11 EUR | 
| 250+ | 4.86 EUR | 
| SIC478ED-T1-GE3 |  | 
Hersteller: Vishay Siliconix
Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 24V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
    Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 24V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SIC478ED-T1-GE3 |  | 
Hersteller: Vishay Siliconix
Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 24V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
    Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 24V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SIC461EVB-A |  | 
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC461
Packaging: Box
Voltage - Output: 3.3V, 5V or 12V
Voltage - Input: 4.5V ~ 60V
Current - Output: 10A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC461
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
    Description: EVAL BOARD FOR SIC461
Packaging: Box
Voltage - Output: 3.3V, 5V or 12V
Voltage - Input: 4.5V ~ 60V
Current - Output: 10A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC461
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 1+ | 57.53 EUR | 
| SIC451EVB-A |  | 
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC451
Packaging: Box
Voltage - Output: 0.3V ~ 12V
Voltage - Input: 4.5V ~ 20V
Current - Output: 25A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: SIC451
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Power - Output: 500mW
    Description: EVAL BOARD FOR SIC451
Packaging: Box
Voltage - Output: 0.3V ~ 12V
Voltage - Input: 4.5V ~ 20V
Current - Output: 25A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: SIC451
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Power - Output: 500mW
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 1+ | 62.39 EUR | 
| SIC474EVB-B |  | 
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC474
Packaging: Box
Voltage - Output: 0.8V ~ 50V
Voltage - Input: 4.5V ~ 55V
Current - Output: 3A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC474
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
    Description: EVAL BOARD FOR SIC474
Packaging: Box
Voltage - Output: 0.8V ~ 50V
Voltage - Input: 4.5V ~ 55V
Current - Output: 3A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC474
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 1+ | 57.53 EUR | 
| SIC473EVB-B |  | 
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC473
Packaging: Box
Voltage - Output: 0.8V ~ 50V
Voltage - Input: 4.5V ~ 55V
Current - Output: 5A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC473
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
    Description: EVAL BOARD FOR SIC473
Packaging: Box
Voltage - Output: 0.8V ~ 50V
Voltage - Input: 4.5V ~ 55V
Current - Output: 5A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC473
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SIC472EVB-A |  | 
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC472
Packaging: Box
Voltage - Output: 0.8V ~ 50V
Voltage - Input: 4.5V ~ 55V
Current - Output: 8A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC472
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
    Description: EVAL BOARD FOR SIC472
Packaging: Box
Voltage - Output: 0.8V ~ 50V
Voltage - Input: 4.5V ~ 55V
Current - Output: 8A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC472
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 1+ | 57.53 EUR | 
| SIC437AEVB-B |  | 
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC437
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 4.5V ~ 28V
Current - Output: 12A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC437
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
    Description: EVAL BOARD FOR SIC437
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 4.5V ~ 28V
Current - Output: 12A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC437
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 1+ | 62.39 EUR | 
| SIC431BEVB-A |  | 
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC431
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 4.5V ~ 24V
Current - Output: 24A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC431
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
    Description: EVAL BOARD FOR SIC431
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 4.5V ~ 24V
Current - Output: 24A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC431
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 1+ | 62.39 EUR | 
| SIC471EVB-A |  | 
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC471
Packaging: Box
Voltage - Output: 0.8V ~ 50V
Voltage - Input: 4.5V ~ 55V
Current - Output: 12A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC471
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
    Description: EVAL BOARD FOR SIC471
Packaging: Box
Voltage - Output: 0.8V ~ 50V
Voltage - Input: 4.5V ~ 55V
Current - Output: 12A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC471
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 1+ | 57.53 EUR | 
| IRFR320PBF-BE3 |  | 
Hersteller: Vishay Siliconix
Description: N-CHANNEL 400V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
    Description: N-CHANNEL 400V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SIC431EVB |  | 
Hersteller: Vishay Siliconix
Description: 3-24V,24V MICROBUCK DEMOBOARD
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 3V ~ 24V
Current - Output: 24A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC431
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
    Description: 3-24V,24V MICROBUCK DEMOBOARD
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 3V ~ 24V
Current - Output: 24A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC431
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| DG1408EEN-T1-GE4 |  | 
Hersteller: Vishay Siliconix
Description: IC MUX 8:1 4.7OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 4.7Ohm
-3db Bandwidth: 46MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 16.5V
Charge Injection: 100pC
Crosstalk: -64dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 14pF, 89pF
Current - Leakage (IS(off)) (Max): 200pA
Part Status: Active
Number of Circuits: 1
    Description: IC MUX 8:1 4.7OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 4.7Ohm
-3db Bandwidth: 46MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 16.5V
Charge Injection: 100pC
Crosstalk: -64dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 14pF, 89pF
Current - Leakage (IS(off)) (Max): 200pA
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| DG1408EEN-T1-GE4 |  | 
Hersteller: Vishay Siliconix
Description: IC MUX 8:1 4.7OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 4.7Ohm
-3db Bandwidth: 46MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 16.5V
Charge Injection: 100pC
Crosstalk: -64dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 14pF, 89pF
Current - Leakage (IS(off)) (Max): 200pA
Part Status: Active
Number of Circuits: 1
    Description: IC MUX 8:1 4.7OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 4.7Ohm
-3db Bandwidth: 46MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 16.5V
Charge Injection: 100pC
Crosstalk: -64dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 14pF, 89pF
Current - Leakage (IS(off)) (Max): 200pA
Part Status: Active
Number of Circuits: 1
auf Bestellung 2459 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 2+ | 11.83 EUR | 
| 10+ | 9.14 EUR | 
| 25+ | 8.47 EUR | 
| 100+ | 7.74 EUR | 
| 250+ | 7.38 EUR | 
| 500+ | 7.17 EUR | 
| 1000+ | 7 EUR | 
| SIP32434ADN-T1E4 |  | 
Hersteller: Vishay Siliconix
Description: 6 A, 33 M, 2.8 V TO 23 V,EFUSE W
Features: Latch Function, Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
    Description: 6 A, 33 M, 2.8 V TO 23 V,EFUSE W
Features: Latch Function, Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 2500+ | 1.06 EUR | 
| 5000+ | 1.03 EUR | 
| SIP32434ADN-T1E4 |  | 
Hersteller: Vishay Siliconix
Description: 6 A, 33 M, 2.8 V TO 23 V,EFUSE W
Features: Latch Function, Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
    Description: 6 A, 33 M, 2.8 V TO 23 V,EFUSE W
Features: Latch Function, Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
auf Bestellung 6315 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 9+ | 2.15 EUR | 
| 12+ | 1.56 EUR | 
| 25+ | 1.42 EUR | 
| 100+ | 1.26 EUR | 
| 250+ | 1.18 EUR | 
| 500+ | 1.14 EUR | 
| 1000+ | 1.1 EUR | 
| SI3443DDV-T1-BE3 |  | 
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
    Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 3000+ | 0.12 EUR | 
| 6000+ | 0.11 EUR | 
| 9000+ | 0.1 EUR | 
| SI3443DDV-T1-BE3 |  | 
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
    Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
auf Bestellung 11944 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 30+ | 0.6 EUR | 
| 45+ | 0.4 EUR | 
| 100+ | 0.22 EUR | 
| 500+ | 0.2 EUR | 
| 1000+ | 0.16 EUR | 
| SQM50N04-4m0L_GE3 |  | 
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 40V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Qualification: AEC-Q101
    Description: MOSFET N-CHANNEL 40V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SQD50N04_4M5LT4GE3 |  | 
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V
Qualification: AEC-Q101
    Description: MOSFET N-CH 40V 50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SIHH105N60EF-T1GE3 |  | 
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 13A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2099 pF @ 100 V
    Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 13A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2099 pF @ 100 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SIHH105N60EF-T1GE3 |  | 
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 13A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2099 pF @ 100 V
    Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 13A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2099 pF @ 100 V
auf Bestellung 3009 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 2+ | 10.33 EUR | 
| 10+ | 7.3 EUR | 
| 100+ | 5.5 EUR | 
| 500+ | 5.04 EUR | 
| SI3493BDV-T1-BE3 |  | 
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V
    Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 3000+ | 0.65 EUR | 
| SI3493BDV-T1-BE3 |  | 
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V
    Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V
auf Bestellung 11586 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 11+ | 1.69 EUR | 
| 12+ | 1.49 EUR | 
| 100+ | 1.14 EUR | 
| 500+ | 0.9 EUR | 
| 1000+ | 0.72 EUR | 
| SIHFR120-GE3 |  | 
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 100V
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
    Description: MOSFET N-CHANNEL 100V
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 3012 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 13+ | 1.44 EUR | 
| 75+ | 0.66 EUR | 
| 150+ | 0.57 EUR | 
| 525+ | 0.51 EUR | 
| 1050+ | 0.46 EUR | 
| 2025+ | 0.42 EUR | 
| SIHG052N60EF-GE3 |  | 
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 48A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 100 V
    Description: MOSFET N-CH 600V 48A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 100 V
auf Bestellung 123 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 2+ | 10.93 EUR | 
| 10+ | 8.11 EUR | 
| 100+ | 6.6 EUR | 
| SI1330EDL-T1-BE3 |  | 
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
    Description: MOSFET N-CH 60V 240MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SI1330EDL-T1-BE3 |  | 
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
    Description: MOSFET N-CH 60V 240MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
auf Bestellung 1782 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 14+ | 1.28 EUR | 
| 23+ | 0.79 EUR | 
| 100+ | 0.51 EUR | 
| 500+ | 0.39 EUR | 
| 1000+ | 0.35 EUR | 
| SI7230DN-T1-E3 |  | 
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9A PPAK 1212-8
    Description: MOSFET N-CH 30V 9A PPAK 1212-8
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| SI7230DN-T1-E3 |  | 
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9A PPAK 1212-8
    Description: MOSFET N-CH 30V 9A PPAK 1212-8
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH