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SIR4604LDP-T1-GE3 SIR4604LDP-T1-GE3 Vishay Siliconix sir4604ldp.pdf Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 3.9W (Ta), 41.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 30 V
auf Bestellung 5786 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.18 EUR
10+1.78 EUR
100+1.39 EUR
500+1.17 EUR
1000+0.96 EUR
Mindestbestellmenge: 9
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SIR4608LDP-T1-GE3 SIR4608LDP-T1-GE3 Vishay Siliconix sir4608ldp.pdf Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 43.4A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.92 EUR
Mindestbestellmenge: 3000
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SIR4608LDP-T1-GE3 SIR4608LDP-T1-GE3 Vishay Siliconix sir4608ldp.pdf Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 43.4A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 30 V
auf Bestellung 6050 Stücke:
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9+2.16 EUR
10+1.94 EUR
100+1.51 EUR
500+1.25 EUR
1000+0.98 EUR
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SIR4604DP-T1-GE3 SIR4604DP-T1-GE3 Vishay Siliconix sir4604dp.pdf Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Ta), 49.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.9W (Ta), 41.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 30 V
auf Bestellung 3000 Stücke:
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3000+0.87 EUR
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SIR4604DP-T1-GE3 SIR4604DP-T1-GE3 Vishay Siliconix sir4604dp.pdf Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Ta), 49.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.9W (Ta), 41.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 30 V
auf Bestellung 8778 Stücke:
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9+2.09 EUR
11+1.72 EUR
100+1.34 EUR
500+1.13 EUR
1000+0.92 EUR
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SISS5708DN-T1-GE3 SISS5708DN-T1-GE3 Vishay Siliconix siss5708dn.pdf Description: N-CHANNEL 150 V (D-S) MOSFET POW
Produkt ist nicht verfügbar
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SISS5708DN-T1-GE3 SISS5708DN-T1-GE3 Vishay Siliconix siss5708dn.pdf Description: N-CHANNEL 150 V (D-S) MOSFET POW
auf Bestellung 50 Stücke:
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6+3.12 EUR
10+2.79 EUR
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SQ4401CEY-T1_GE3 SQ4401CEY-T1_GE3 Vishay Siliconix sq4401cey.pdf Description: AUTOMOTIVE P-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 7.14W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQ4401CEY-T1_GE3 SQ4401CEY-T1_GE3 Vishay Siliconix sq4401cey.pdf Description: AUTOMOTIVE P-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 7.14W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2092 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.92 EUR
12+1.58 EUR
100+1.22 EUR
500+1.04 EUR
1000+0.85 EUR
Mindestbestellmenge: 10
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IRFR224TRPBF-BE3 IRFR224TRPBF-BE3 Vishay Siliconix sihfr224.pdf Description: N-CHANNEL 250V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.09 EUR
Mindestbestellmenge: 2000
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SIHK105N60E-T1-GE3 SIHK105N60E-T1-GE3 Vishay Siliconix sihk105n60ef.pdf Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2301 pF @ 100 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+4.05 EUR
Mindestbestellmenge: 2000
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SIHK105N60E-T1-GE3 SIHK105N60E-T1-GE3 Vishay Siliconix sihk105n60ef.pdf Description: E SERIES POWER MOSFET WITH FAST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2301 pF @ 100 V
auf Bestellung 2050 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.75 EUR
10+7 EUR
100+5.06 EUR
500+4.24 EUR
1000+4.15 EUR
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SISS92DN-T1-GE3 SISS92DN-T1-GE3 Vishay Siliconix siss92dn.pdf Description: MOSFET N-CH 250V 3.4A/12.3A PPAK
auf Bestellung 166 Stücke:
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9+2.08 EUR
10+1.85 EUR
100+1.44 EUR
Mindestbestellmenge: 9
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SIA477EDJT-T1-GE3 SIA477EDJT-T1-GE3 Vishay Siliconix sia477edjt.pdf Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 6 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.25 EUR
6000+0.23 EUR
9000+0.22 EUR
Mindestbestellmenge: 3000
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SIA477EDJT-T1-GE3 SIA477EDJT-T1-GE3 Vishay Siliconix sia477edjt.pdf Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 6 V
auf Bestellung 13346 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.88 EUR
30+0.59 EUR
100+0.41 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 20
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SQJ182EP-T1_GE3 SQJ182EP-T1_GE3 Vishay Siliconix sqj182ep.pdf Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.05 EUR
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SQJ182EP-T1_GE3 SQJ182EP-T1_GE3 Vishay Siliconix sqj182ep.pdf Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.41 EUR
10+2.02 EUR
100+1.57 EUR
500+1.26 EUR
1000+1.16 EUR
Mindestbestellmenge: 8
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SQJ142ELP-T1_GE3 SQJ142ELP-T1_GE3 Vishay Siliconix sqj142elp.pdf Description: MOSFET N-CH 40V 175A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 10A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQJ142ELP-T1_GE3 SQJ142ELP-T1_GE3 Vishay Siliconix sqj142elp.pdf Description: MOSFET N-CH 40V 175A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 10A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2384 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.24 EUR
12+1.56 EUR
100+1.21 EUR
500+0.95 EUR
1000+0.87 EUR
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SQJ186ELP-T1_GE3 SQJ186ELP-T1_GE3 Vishay Siliconix sqj186elp.pdf Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2325 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQJ186ELP-T1_GE3 SQJ186ELP-T1_GE3 Vishay Siliconix sqj186elp.pdf Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2325 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1576 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.44 EUR
15+1.18 EUR
100+0.92 EUR
500+0.78 EUR
1000+0.63 EUR
Mindestbestellmenge: 13
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SQJ152ELP-T1_GE3 SQJ152ELP-T1_GE3 Vishay Siliconix sqj152elp.pdf Description: MOSFET N-CH 40V 123A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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3000+0.61 EUR
6000+0.57 EUR
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SQJ152ELP-T1_GE3 SQJ152ELP-T1_GE3 Vishay Siliconix sqj152elp.pdf Description: MOSFET N-CH 40V 123A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6838 Stücke:
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8+2.36 EUR
12+1.48 EUR
100+0.98 EUR
500+0.77 EUR
1000+0.7 EUR
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SQJ146ELP-T1_GE3 SQJ146ELP-T1_GE3 Vishay Siliconix Description: MOSFET N-CH 40V 74A PPAK SO-8
Produkt ist nicht verfügbar
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SQJ146ELP-T1_GE3 SQJ146ELP-T1_GE3 Vishay Siliconix Description: MOSFET N-CH 40V 74A PPAK SO-8
Produkt ist nicht verfügbar
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SQJ147ELP-T1_GE3 SQJ147ELP-T1_GE3 Vishay Siliconix sqj147elp.pdf Description: MOSFET P-CH 40V 90A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
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3000+0.61 EUR
6000+0.56 EUR
9000+0.55 EUR
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IRF840 IRF840 Vishay Siliconix irf840_SiHF840_RevD_5-2-16.pdf Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
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SI7792DP-T1-GE3 SI7792DP-T1-GE3 Vishay Siliconix SI7792DP.pdf Description: MOSFET N-CH 30V 40.6A/60A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40.6A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4735 pF @ 15 V
Produkt ist nicht verfügbar
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SIR584DP-T1-RE3 SIR584DP-T1-RE3 Vishay Siliconix sir584dp.pdf Description: N-CHANNEL 80 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
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SIR584DP-T1-RE3 SIR584DP-T1-RE3 Vishay Siliconix sir584dp.pdf Description: N-CHANNEL 80 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
auf Bestellung 2947 Stücke:
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7+2.59 EUR
10+2.16 EUR
100+1.68 EUR
500+1.62 EUR
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SI4090BDY-T1-GE3 SI4090BDY-T1-GE3 Vishay Siliconix si4090bdy.pdf Description: N-CHANNEL 100-V (D-S) MOSFET SO-
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), 18.7A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 12.2A, 10V
Power Dissipation (Max): 3.1W (Ta), 7.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 50 V
auf Bestellung 2500 Stücke:
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2500+0.91 EUR
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SI4090BDY-T1-GE3 SI4090BDY-T1-GE3 Vishay Siliconix si4090bdy.pdf Description: N-CHANNEL 100-V (D-S) MOSFET SO-
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), 18.7A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 12.2A, 10V
Power Dissipation (Max): 3.1W (Ta), 7.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 50 V
auf Bestellung 2611 Stücke:
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8+2.29 EUR
10+1.89 EUR
100+1.4 EUR
500+1.09 EUR
1000+1 EUR
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SISHA06DN-T1-GE3 SISHA06DN-T1-GE3 Vishay Siliconix sisha06dn.pdf Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3932 pF @ 15 V
auf Bestellung 9000 Stücke:
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3000+0.6 EUR
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SISHA06DN-T1-GE3 SISHA06DN-T1-GE3 Vishay Siliconix sisha06dn.pdf Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3932 pF @ 15 V
auf Bestellung 11905 Stücke:
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8+2.27 EUR
14+1.35 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
Mindestbestellmenge: 8
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SIJA54ADP-T1-GE3 SIJA54ADP-T1-GE3 Vishay Siliconix sija54adp.pdf Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Produkt ist nicht verfügbar
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SIJA54ADP-T1-GE3 SIJA54ADP-T1-GE3 Vishay Siliconix sija54adp.pdf Description: N-CHANNEL 40 V (D-S) MOSFET POWE
auf Bestellung 50 Stücke:
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6+3.34 EUR
10+3 EUR
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SISHA18ADN-T1-GE3 SISHA18ADN-T1-GE3 Vishay Siliconix sisha18adn.pdf Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 26.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.39 EUR
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SISHA18ADN-T1-GE3 SISHA18ADN-T1-GE3 Vishay Siliconix sisha18adn.pdf Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 26.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 15 V
auf Bestellung 12009 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.43 EUR
19+0.96 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.53 EUR
Mindestbestellmenge: 13
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SIS4608DN-T1-GE3 SIS4608DN-T1-GE3 Vishay Siliconix sis4608dn.pdf Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 35.7A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.52 EUR
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SIS4608DN-T1-GE3 SIS4608DN-T1-GE3 Vishay Siliconix sis4608dn.pdf Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 35.7A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 30 V
auf Bestellung 5855 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.36 EUR
15+1.18 EUR
100+0.81 EUR
500+0.68 EUR
1000+0.58 EUR
Mindestbestellmenge: 13
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SIS184LDN-T1-GE3 SIS184LDN-T1-GE3 Vishay Siliconix sis184ldn.pdf Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 69.4A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.23 EUR
Mindestbestellmenge: 3000
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SIS184LDN-T1-GE3 SIS184LDN-T1-GE3 Vishay Siliconix sis184ldn.pdf Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 69.4A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
auf Bestellung 5997 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
10+2.26 EUR
100+1.8 EUR
500+1.52 EUR
1000+1.29 EUR
Mindestbestellmenge: 7
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SIR184LDP-T1-RE3 SIR184LDP-T1-RE3 Vishay Siliconix sir184ldp.pdf Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1 EUR
Mindestbestellmenge: 3000
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SIR184LDP-T1-RE3 SIR184LDP-T1-RE3 Vishay Siliconix sir184ldp.pdf Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
auf Bestellung 5583 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.43 EUR
10+1.99 EUR
100+1.55 EUR
500+1.31 EUR
1000+1.07 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SIR5708DP-T1-RE3 SIR5708DP-T1-RE3 Vishay Siliconix sir5708dp.pdf Description: N-CHANNEL 150 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 33.8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 75 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.93 EUR
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SIR5708DP-T1-RE3 SIR5708DP-T1-RE3 Vishay Siliconix sir5708dp.pdf Description: N-CHANNEL 150 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 33.8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 75 V
auf Bestellung 5968 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.69 EUR
10+2.04 EUR
100+1.43 EUR
500+1.14 EUR
1000+1.05 EUR
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SQA602CEJW-T1_GE3 SQA602CEJW-T1_GE3 Vishay Siliconix sqa602cejw.pdf Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.63A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 3A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK®SC-70W-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.26 EUR
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SQA602CEJW-T1_GE3 SQA602CEJW-T1_GE3 Vishay Siliconix sqa602cejw.pdf Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.63A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 3A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK®SC-70W-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V
auf Bestellung 5830 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
28+0.63 EUR
100+0.47 EUR
500+0.37 EUR
1000+0.29 EUR
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SQA444CEJW-T1_GE3 SQA444CEJW-T1_GE3 Vishay Siliconix sqa444cejw.pdf Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.5A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK®SC-70W-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQA444CEJW-T1_GE3 SQA444CEJW-T1_GE3 Vishay Siliconix sqa444cejw.pdf Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.5A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK®SC-70W-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2574 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
27+0.65 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.29 EUR
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SIHG150N60E-GE3 SIHG150N60E-GE3 Vishay Siliconix sihg150n60e.pdf Description: E SERIES POWER MOSFET TO-247AC,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 897 Stücke:
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3+7.48 EUR
10+5.23 EUR
100+3.73 EUR
500+3.1 EUR
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SIHA150N60E-GE3 SIHA150N60E-GE3 Vishay Siliconix siha150n60e.pdf Description: E SERIES POWER MOSFET THIN-LEAD
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.97 EUR
10+4.25 EUR
100+3.06 EUR
500+2.45 EUR
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SIHP150N60E-GE3 SIHP150N60E-GE3 Vishay Siliconix sihp150n60e.pdf Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 1981 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.05 EUR
10+4.33 EUR
100+3.13 EUR
500+2.52 EUR
Mindestbestellmenge: 3
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SQS142ENW-T1_GE3 SQS142ENW-T1_GE3 Vishay Siliconix sqs142enw.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.57 EUR
6000+0.54 EUR
Mindestbestellmenge: 3000
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SQS142ENW-T1_GE3 SQS142ENW-T1_GE3 Vishay Siliconix sqs142enw.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.5 EUR
14+1.3 EUR
100+0.9 EUR
500+0.75 EUR
1000+0.64 EUR
Mindestbestellmenge: 12
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SQ4005EY-T1_BE3 SQ4005EY-T1_BE3 Vishay Siliconix sq4005ey.pdf Description: MOSFET P-CHANNEL 12V 15A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 13.5A, 4.5V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 6 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ4005EY-T1_BE3 SQ4005EY-T1_BE3 Vishay Siliconix sq4005ey.pdf Description: MOSFET P-CHANNEL 12V 15A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 13.5A, 4.5V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 6 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.53 EUR
15+1.25 EUR
100+0.97 EUR
500+0.83 EUR
1000+0.67 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
SIR1309DP-T1-GE3 SIR1309DP-T1-GE3 Vishay Siliconix sir1309dp.pdf Description: P-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.1A (Ta), 65.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIR1309DP-T1-GE3 SIR1309DP-T1-GE3 Vishay Siliconix sir1309dp.pdf Description: P-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.1A (Ta), 65.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
auf Bestellung 4519 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.27 EUR
100+0.87 EUR
500+0.7 EUR
1000+0.64 EUR
Mindestbestellmenge: 14
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SIHL620S-GE3 SIHL620S-GE3 Vishay Siliconix sihl620s.pdf Description: LOGIC MOSFET N-CHANNEL 200V
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 686 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.36 EUR
50+1.11 EUR
100+0.99 EUR
500+0.77 EUR
Mindestbestellmenge: 8
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SIR4604LDP-T1-GE3 sir4604ldp.pdf
SIR4604LDP-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 3.9W (Ta), 41.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 30 V
auf Bestellung 5786 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.18 EUR
10+1.78 EUR
100+1.39 EUR
500+1.17 EUR
1000+0.96 EUR
Mindestbestellmenge: 9
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SIR4608LDP-T1-GE3 sir4608ldp.pdf
SIR4608LDP-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 43.4A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.92 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIR4608LDP-T1-GE3 sir4608ldp.pdf
SIR4608LDP-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 43.4A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 30 V
auf Bestellung 6050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.16 EUR
10+1.94 EUR
100+1.51 EUR
500+1.25 EUR
1000+0.98 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
SIR4604DP-T1-GE3 sir4604dp.pdf
SIR4604DP-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Ta), 49.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.9W (Ta), 41.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.87 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIR4604DP-T1-GE3 sir4604dp.pdf
SIR4604DP-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Ta), 49.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.9W (Ta), 41.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 30 V
auf Bestellung 8778 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
11+1.72 EUR
100+1.34 EUR
500+1.13 EUR
1000+0.92 EUR
Mindestbestellmenge: 9
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SISS5708DN-T1-GE3 siss5708dn.pdf
SISS5708DN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) MOSFET POW
Produkt ist nicht verfügbar
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SISS5708DN-T1-GE3 siss5708dn.pdf
SISS5708DN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) MOSFET POW
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.12 EUR
10+2.79 EUR
Mindestbestellmenge: 6
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SQ4401CEY-T1_GE3 sq4401cey.pdf
SQ4401CEY-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 7.14W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQ4401CEY-T1_GE3 sq4401cey.pdf
SQ4401CEY-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 7.14W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2092 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
12+1.58 EUR
100+1.22 EUR
500+1.04 EUR
1000+0.85 EUR
Mindestbestellmenge: 10
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IRFR224TRPBF-BE3 sihfr224.pdf
IRFR224TRPBF-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 250V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.09 EUR
Mindestbestellmenge: 2000
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SIHK105N60E-T1-GE3 sihk105n60ef.pdf
SIHK105N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2301 pF @ 100 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+4.05 EUR
Mindestbestellmenge: 2000
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SIHK105N60E-T1-GE3 sihk105n60ef.pdf
SIHK105N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2301 pF @ 100 V
auf Bestellung 2050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.75 EUR
10+7 EUR
100+5.06 EUR
500+4.24 EUR
1000+4.15 EUR
Mindestbestellmenge: 2
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SISS92DN-T1-GE3 siss92dn.pdf
SISS92DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 3.4A/12.3A PPAK
auf Bestellung 166 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
10+1.85 EUR
100+1.44 EUR
Mindestbestellmenge: 9
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SIA477EDJT-T1-GE3 sia477edjt.pdf
SIA477EDJT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 6 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.25 EUR
6000+0.23 EUR
9000+0.22 EUR
Mindestbestellmenge: 3000
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SIA477EDJT-T1-GE3 sia477edjt.pdf
SIA477EDJT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 6 V
auf Bestellung 13346 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
30+0.59 EUR
100+0.41 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 20
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SQJ182EP-T1_GE3 sqj182ep.pdf
SQJ182EP-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.05 EUR
Mindestbestellmenge: 3000
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SQJ182EP-T1_GE3 sqj182ep.pdf
SQJ182EP-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
10+2.02 EUR
100+1.57 EUR
500+1.26 EUR
1000+1.16 EUR
Mindestbestellmenge: 8
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SQJ142ELP-T1_GE3 sqj142elp.pdf
SQJ142ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 175A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 10A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQJ142ELP-T1_GE3 sqj142elp.pdf
SQJ142ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 175A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 10A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2384 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
12+1.56 EUR
100+1.21 EUR
500+0.95 EUR
1000+0.87 EUR
Mindestbestellmenge: 8
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SQJ186ELP-T1_GE3 sqj186elp.pdf
SQJ186ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2325 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQJ186ELP-T1_GE3 sqj186elp.pdf
SQJ186ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2325 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1576 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
15+1.18 EUR
100+0.92 EUR
500+0.78 EUR
1000+0.63 EUR
Mindestbestellmenge: 13
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SQJ152ELP-T1_GE3 sqj152elp.pdf
SQJ152ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 123A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.61 EUR
6000+0.57 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SQJ152ELP-T1_GE3 sqj152elp.pdf
SQJ152ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 123A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6838 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.36 EUR
12+1.48 EUR
100+0.98 EUR
500+0.77 EUR
1000+0.7 EUR
Mindestbestellmenge: 8
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SQJ146ELP-T1_GE3
SQJ146ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 74A PPAK SO-8
Produkt ist nicht verfügbar
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SQJ146ELP-T1_GE3
SQJ146ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 74A PPAK SO-8
Produkt ist nicht verfügbar
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SQJ147ELP-T1_GE3 sqj147elp.pdf
SQJ147ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 90A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.61 EUR
6000+0.56 EUR
9000+0.55 EUR
Mindestbestellmenge: 3000
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IRF840 irf840_SiHF840_RevD_5-2-16.pdf
IRF840
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
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SI7792DP-T1-GE3 SI7792DP.pdf
SI7792DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40.6A/60A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40.6A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4735 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIR584DP-T1-RE3 sir584dp.pdf
SIR584DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
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SIR584DP-T1-RE3 sir584dp.pdf
SIR584DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
auf Bestellung 2947 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
10+2.16 EUR
100+1.68 EUR
500+1.62 EUR
Mindestbestellmenge: 7
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SI4090BDY-T1-GE3 si4090bdy.pdf
SI4090BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) MOSFET SO-
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), 18.7A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 12.2A, 10V
Power Dissipation (Max): 3.1W (Ta), 7.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.91 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
SI4090BDY-T1-GE3 si4090bdy.pdf
SI4090BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) MOSFET SO-
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), 18.7A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 12.2A, 10V
Power Dissipation (Max): 3.1W (Ta), 7.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 50 V
auf Bestellung 2611 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.29 EUR
10+1.89 EUR
100+1.4 EUR
500+1.09 EUR
1000+1 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SISHA06DN-T1-GE3 sisha06dn.pdf
SISHA06DN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3932 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.6 EUR
Mindestbestellmenge: 3000
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SISHA06DN-T1-GE3 sisha06dn.pdf
SISHA06DN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3932 pF @ 15 V
auf Bestellung 11905 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
14+1.35 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
Mindestbestellmenge: 8
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SIJA54ADP-T1-GE3 sija54adp.pdf
SIJA54ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIJA54ADP-T1-GE3 sija54adp.pdf
SIJA54ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) MOSFET POWE
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.34 EUR
10+3 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SISHA18ADN-T1-GE3 sisha18adn.pdf
SISHA18ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 26.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.39 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SISHA18ADN-T1-GE3 sisha18adn.pdf
SISHA18ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 26.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 15 V
auf Bestellung 12009 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
19+0.96 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.53 EUR
Mindestbestellmenge: 13
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SIS4608DN-T1-GE3 sis4608dn.pdf
SIS4608DN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 35.7A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.52 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIS4608DN-T1-GE3 sis4608dn.pdf
SIS4608DN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 35.7A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 30 V
auf Bestellung 5855 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
15+1.18 EUR
100+0.81 EUR
500+0.68 EUR
1000+0.58 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
SIS184LDN-T1-GE3 sis184ldn.pdf
SIS184LDN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 69.4A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.23 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIS184LDN-T1-GE3 sis184ldn.pdf
SIS184LDN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 69.4A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
auf Bestellung 5997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
10+2.26 EUR
100+1.8 EUR
500+1.52 EUR
1000+1.29 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SIR184LDP-T1-RE3 sir184ldp.pdf
SIR184LDP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIR184LDP-T1-RE3 sir184ldp.pdf
SIR184LDP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
auf Bestellung 5583 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.43 EUR
10+1.99 EUR
100+1.55 EUR
500+1.31 EUR
1000+1.07 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SIR5708DP-T1-RE3 sir5708dp.pdf
SIR5708DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 33.8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 75 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.93 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIR5708DP-T1-RE3 sir5708dp.pdf
SIR5708DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 33.8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 75 V
auf Bestellung 5968 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
10+2.04 EUR
100+1.43 EUR
500+1.14 EUR
1000+1.05 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SQA602CEJW-T1_GE3 sqa602cejw.pdf
SQA602CEJW-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.63A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 3A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK®SC-70W-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SQA602CEJW-T1_GE3 sqa602cejw.pdf
SQA602CEJW-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.63A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 3A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK®SC-70W-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V
auf Bestellung 5830 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
28+0.63 EUR
100+0.47 EUR
500+0.37 EUR
1000+0.29 EUR
Mindestbestellmenge: 24
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SQA444CEJW-T1_GE3 sqa444cejw.pdf
SQA444CEJW-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.5A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK®SC-70W-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQA444CEJW-T1_GE3 sqa444cejw.pdf
SQA444CEJW-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.5A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK®SC-70W-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2574 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
27+0.65 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.29 EUR
Mindestbestellmenge: 23
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SIHG150N60E-GE3 sihg150n60e.pdf
SIHG150N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-247AC,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 897 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.48 EUR
10+5.23 EUR
100+3.73 EUR
500+3.1 EUR
Mindestbestellmenge: 3
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SIHA150N60E-GE3 siha150n60e.pdf
SIHA150N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET THIN-LEAD
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.97 EUR
10+4.25 EUR
100+3.06 EUR
500+2.45 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHP150N60E-GE3 sihp150n60e.pdf
SIHP150N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 1981 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.05 EUR
10+4.33 EUR
100+3.13 EUR
500+2.52 EUR
Mindestbestellmenge: 3
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SQS142ENW-T1_GE3 sqs142enw.pdf
SQS142ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.57 EUR
6000+0.54 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SQS142ENW-T1_GE3 sqs142enw.pdf
SQS142ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.5 EUR
14+1.3 EUR
100+0.9 EUR
500+0.75 EUR
1000+0.64 EUR
Mindestbestellmenge: 12
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SQ4005EY-T1_BE3 sq4005ey.pdf
SQ4005EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 12V 15A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 13.5A, 4.5V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 6 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQ4005EY-T1_BE3 sq4005ey.pdf
SQ4005EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 12V 15A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 13.5A, 4.5V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 6 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
15+1.25 EUR
100+0.97 EUR
500+0.83 EUR
1000+0.67 EUR
Mindestbestellmenge: 12
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SIR1309DP-T1-GE3 sir1309dp.pdf
SIR1309DP-T1-GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.1A (Ta), 65.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
Produkt ist nicht verfügbar
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SIR1309DP-T1-GE3 sir1309dp.pdf
SIR1309DP-T1-GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.1A (Ta), 65.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
auf Bestellung 4519 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
100+0.87 EUR
500+0.7 EUR
1000+0.64 EUR
Mindestbestellmenge: 14
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SIHL620S-GE3 sihl620s.pdf
SIHL620S-GE3
Hersteller: Vishay Siliconix
Description: LOGIC MOSFET N-CHANNEL 200V
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 686 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.36 EUR
50+1.11 EUR
100+0.99 EUR
500+0.77 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
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