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SI2374DS-T1-BE3 SI2374DS-T1-BE3 Vishay Siliconix si2374ds.pdf Description: N-CHANNEL 20-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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SI2377EDS-T1-BE3 SI2377EDS-T1-BE3 Vishay Siliconix si2377eds.pdf Description: P-CHANNEL 20-V (D-S) MOSFET
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 4.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Packaging: Tape & Reel (TR)
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SI2377EDS-T1-BE3 SI2377EDS-T1-BE3 Vishay Siliconix si2377eds.pdf Description: P-CHANNEL 20-V (D-S) MOSFET
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 4.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
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SI2371EDS-T1-BE3 SI2371EDS-T1-BE3 Vishay Siliconix si2371eds.pdf Description: P-CHANNEL 30-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
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SI2371EDS-T1-BE3 SI2371EDS-T1-BE3 Vishay Siliconix si2371eds.pdf Description: P-CHANNEL 30-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
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SI2372DS-T1-GE3 SI2372DS-T1-GE3 Vishay Siliconix si2372ds.pdf Description: MOSFET N-CH 30V 4A/5.3A SOT23-3
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SI2372DS-T1-GE3 SI2372DS-T1-GE3 Vishay Siliconix si2372ds.pdf Description: MOSFET N-CH 30V 4A/5.3A SOT23-3
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SI3443CDV-T1-BE3 SI3443CDV-T1-BE3 Vishay Siliconix si3443cd.pdf Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 5.97A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
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SI3443CDV-T1-BE3 SI3443CDV-T1-BE3 Vishay Siliconix si3443cd.pdf Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 5.97A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
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SISA14BDN-T1-GE3 SISA14BDN-T1-GE3 Vishay Siliconix sisa14bdn.pdf Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 5.38mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 917 pF @ 15 V
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SISA14BDN-T1-GE3 SISA14BDN-T1-GE3 Vishay Siliconix sisa14bdn.pdf Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 5.38mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 917 pF @ 15 V
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SIA4263DJ-T1-GE3 SIA4263DJ-T1-GE3 Vishay Siliconix sia4263dj.pdf Description: P-CHANNEL 20-V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52.2 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.29W (Ta), 15.6W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
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SIA4263DJ-T1-GE3 SIA4263DJ-T1-GE3 Vishay Siliconix sia4263dj.pdf Description: P-CHANNEL 20-V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52.2 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.29W (Ta), 15.6W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
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SISA12BDN-T1-GE3 SISA12BDN-T1-GE3 Vishay Siliconix sisa10bdn.pdf Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 4W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
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SISA12BDN-T1-GE3 SISA12BDN-T1-GE3 Vishay Siliconix sisa10bdn.pdf Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 4W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
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SISA10BDN-T1-GE3 SISA10BDN-T1-GE3 Vishay Siliconix Description: N-CHANNEL 30-V (D-S) MOSFET POWE
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SISA10BDN-T1-GE3 SISA10BDN-T1-GE3 Vishay Siliconix Description: N-CHANNEL 30-V (D-S) MOSFET POWE
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SQJ140ELP-T1_GE3 SQJ140ELP-T1_GE3 Vishay Siliconix sqj140elp.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
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SQJ140ELP-T1_GE3 SQJ140ELP-T1_GE3 Vishay Siliconix sqj140elp.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
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SQD10N30-330H_4GE3 SQD10N30-330H_4GE3 Vishay Siliconix sqd10n30-330h.pdf Description: N-CHANNEL 300-V (D-S) 175C MOSFE
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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SQD10N30-330H_4GE3 SQD10N30-330H_4GE3 Vishay Siliconix sqd10n30-330h.pdf Description: N-CHANNEL 300-V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Qualification: AEC-Q101
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SQ3418EV-T1_BE3 SQ3418EV-T1_BE3 Vishay Siliconix sq3418ev.pdf Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 20 V
Qualification: AEC-Q101
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SQ3418EV-T1_BE3 SQ3418EV-T1_BE3 Vishay Siliconix sq3418ev.pdf Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 20 V
Qualification: AEC-Q101
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SIHFU310-GE3 SIHFU310-GE3 Vishay Siliconix sihfr310.pdf Description: MOSFET N-CHANNEL 400V
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
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SUP60061EL-GE3 SUP60061EL-GE3 Vishay Siliconix sup60061el.pdf Description: P-CHANNEL 80 V (D-S) MOSFET TO-2
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 40 V
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SIHP5N80AE-GE3 SIHP5N80AE-GE3 Vishay Siliconix sihp5n80ae.pdf Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V
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SIHA25N50E-GE3 SIHA25N50E-GE3 Vishay Siliconix siha25n50e.pdf Description: N-CHANNEL 500V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V
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SIHA25N50E-GE3 SIHA25N50E-GE3 Vishay Siliconix siha25n50e.pdf Description: N-CHANNEL 500V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V
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SI1467DH-T1-E3 SI1467DH-T1-E3 Vishay Siliconix si1467dh.pdf Description: MOSFET P-CH 20V 2.7A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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SI1467DH-T1-E3 SI1467DH-T1-E3 Vishay Siliconix si1467dh.pdf Description: MOSFET P-CH 20V 2.7A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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SI3476DV-T1-BE3 SI3476DV-T1-BE3 Vishay Siliconix si3476dv.pdf Description: N-CHANNEL 80-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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SI3476DV-T1-BE3 SI3476DV-T1-BE3 Vishay Siliconix si3476dv.pdf Description: N-CHANNEL 80-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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SIHK065N60E-T1-GE3 SIHK065N60E-T1-GE3 Vishay Siliconix sihk065n60e.pdf Description: E SERIES POWER MOSFET POWERPAK 1
Rds On (Max) @ Id, Vgs: 68mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 192W (Tc)
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SIHK065N60E-T1-GE3 SIHK065N60E-T1-GE3 Vishay Siliconix sihk065n60e.pdf Description: E SERIES POWER MOSFET POWERPAK 1
Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 68mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Power Dissipation (Max): 192W (Tc)
Packaging: Cut Tape (CT)
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SIHK045N60EF-T1GE3 SIHK045N60EF-T1GE3 Vishay Siliconix sihk045n60ef.pdf Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 17A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 100 V
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SIHK045N60EF-T1GE3 SIHK045N60EF-T1GE3 Vishay Siliconix sihk045n60ef.pdf Description: E SERIES POWER MOSFET WITH FAST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 17A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 100 V
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SIHK125N60EF-T1GE3 SIHK125N60EF-T1GE3 Vishay Siliconix sihk125n60ef.pdf Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1863 pF @ 100 V
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SIHK125N60EF-T1GE3 SIHK125N60EF-T1GE3 Vishay Siliconix sihk125n60ef.pdf Description: E SERIES POWER MOSFET WITH FAST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1863 pF @ 100 V
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SIHF840LCS-GE3 SIHF840LCS-GE3 Vishay Siliconix sihf840l.pdf Description: MOSFET N-CH 500V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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DG417LEDY-GE3 DG417LEDY-GE3 Vishay Siliconix Description: IC ANALOG SWITCH 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Voltage - Supply, Single (V+): 3V ~ 16V
Part Status: Active
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SQ4920EY-T1_BE3 SQ4920EY-T1_BE3 Vishay Siliconix sq4920ey.pdf Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
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SQ4920EY-T1_BE3 SQ4920EY-T1_BE3 Vishay Siliconix sq4920ey.pdf Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
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SIZF5302DT-T1-RE3 SIZF5302DT-T1-RE3 Vishay Siliconix sizf5302dt.pdf Description: MOSFET 2N-CH 30V 28.1A PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 48.1W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
Part Status: Active
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SIZF5302DT-T1-RE3 SIZF5302DT-T1-RE3 Vishay Siliconix sizf5302dt.pdf Description: MOSFET 2N-CH 30V 28.1A PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 48.1W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
Part Status: Active
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SIZF5300DT-T1-GE3 SIZF5300DT-T1-GE3 Vishay Siliconix sizf5300dt.pdf Description: MOSFET 2N-CH 30V 35A PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 56.8W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 125A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
Part Status: Active
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SIZF5300DT-T1-GE3 SIZF5300DT-T1-GE3 Vishay Siliconix sizf5300dt.pdf Description: MOSFET 2N-CH 30V 35A PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 56.8W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 125A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
Part Status: Active
auf Bestellung 2317 Stücke:
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SIZF928DT-T1-GE3 SIZF928DT-T1-GE3 Vishay Siliconix sizf928dt.pdf Description: MOSFET 2N-CH 30V 33A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.45mOhm @ 10A, 10V, 0.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
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SIZF928DT-T1-GE3 SIZF928DT-T1-GE3 Vishay Siliconix sizf928dt.pdf Description: MOSFET 2N-CH 30V 33A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.45mOhm @ 10A, 10V, 0.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
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SQJB44EP-T1_GE3 SQJB44EP-T1_GE3 Vishay Siliconix sqjb44ep.pdf Description: DUAL N-CHANNEL 40-V (D-S) MOSFET
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SQJB44EP-T1_GE3 SQJB44EP-T1_GE3 Vishay Siliconix sqjb44ep.pdf Description: DUAL N-CHANNEL 40-V (D-S) MOSFET
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SQJB48EP-T1_GE3 SQJB48EP-T1_GE3 Vishay Siliconix sqjb48ep.pdf Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SQJB48EP-T1_GE3 SQJB48EP-T1_GE3 Vishay Siliconix sqjb48ep.pdf Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SQJA86EP-T1_BE3 SQJA86EP-T1_BE3 Vishay Siliconix sqja86ep.pdf Description: N-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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SQJA86EP-T1_BE3 SQJA86EP-T1_BE3 Vishay Siliconix sqja86ep.pdf Description: N-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 5539 Stücke:
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15+1.45 EUR
100+1.13 EUR
500+0.95 EUR
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SQJ910AEP-T1_BE3 SQJ910AEP-T1_BE3 Vishay Siliconix sqj910aep.pdf Description: MOSFET 2N-CH 30V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
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SQJ910AEP-T1_BE3 SQJ910AEP-T1_BE3 Vishay Siliconix sqj910aep.pdf Description: MOSFET 2N-CH 30V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2970 Stücke:
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9+2.39 EUR
11+1.95 EUR
100+1.51 EUR
500+1.29 EUR
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SQJ992EP-T1_BE3 SQJ992EP-T1_BE3 Vishay Siliconix sqj992ep.pdf Description: DUAL N-CHANNEL 60-V (D-S) 175C M
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SQJ992EP-T1_BE3 SQJ992EP-T1_BE3 Vishay Siliconix sqj992ep.pdf Description: DUAL N-CHANNEL 60-V (D-S) 175C M
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SQJB80EP-T1_BE3 SQJB80EP-T1_BE3 Vishay Siliconix sqjb80ep.pdf Description: MOSFET 2N-CH 80V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQJB80EP-T1_BE3 SQJB80EP-T1_BE3 Vishay Siliconix sqjb80ep.pdf Description: MOSFET 2N-CH 80V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2940 Stücke:
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10+2.18 EUR
12+1.8 EUR
100+1.39 EUR
500+1.18 EUR
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SI2374DS-T1-BE3 si2374ds.pdf
SI2374DS-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2151 Stücke:
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25+0.86 EUR
40+0.54 EUR
100+0.33 EUR
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SI2377EDS-T1-BE3 si2377eds.pdf
SI2377EDS-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 4.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI2377EDS-T1-BE3 si2377eds.pdf
SI2377EDS-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 4.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
auf Bestellung 1985 Stücke:
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22+0.96 EUR
29+0.75 EUR
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SI2371EDS-T1-BE3 si2371eds.pdf
SI2371EDS-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
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3000+0.17 EUR
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SI2371EDS-T1-BE3 si2371eds.pdf
SI2371EDS-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
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100+0.31 EUR
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SI2372DS-T1-GE3 si2372ds.pdf
SI2372DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4A/5.3A SOT23-3
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SI2372DS-T1-GE3 si2372ds.pdf
SI2372DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4A/5.3A SOT23-3
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SI3443CDV-T1-BE3 si3443cd.pdf
SI3443CDV-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 5.97A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
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3000+0.4 EUR
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SI3443CDV-T1-BE3 si3443cd.pdf
SI3443CDV-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 5.97A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
auf Bestellung 6498 Stücke:
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100+0.68 EUR
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SISA14BDN-T1-GE3 sisa14bdn.pdf
SISA14BDN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 5.38mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 917 pF @ 15 V
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3000+0.48 EUR
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SISA14BDN-T1-GE3 sisa14bdn.pdf
SISA14BDN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 5.38mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 917 pF @ 15 V
auf Bestellung 6985 Stücke:
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18+1.2 EUR
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SIA4263DJ-T1-GE3 sia4263dj.pdf
SIA4263DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52.2 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.29W (Ta), 15.6W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
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SIA4263DJ-T1-GE3 sia4263dj.pdf
SIA4263DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52.2 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.29W (Ta), 15.6W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
auf Bestellung 6010 Stücke:
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SISA12BDN-T1-GE3 sisa10bdn.pdf
SISA12BDN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 4W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
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SISA12BDN-T1-GE3 sisa10bdn.pdf
SISA12BDN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 4W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
auf Bestellung 6024 Stücke:
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SISA10BDN-T1-GE3
SISA10BDN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET POWE
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SISA10BDN-T1-GE3
SISA10BDN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET POWE
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SQJ140ELP-T1_GE3 sqj140elp.pdf
SQJ140ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
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3000+1.02 EUR
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SQJ140ELP-T1_GE3 sqj140elp.pdf
SQJ140ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
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SQD10N30-330H_4GE3 sqd10n30-330h.pdf
SQD10N30-330H_4GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 300-V (D-S) 175C MOSFE
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SQD10N30-330H_4GE3 sqd10n30-330h.pdf
SQD10N30-330H_4GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 300-V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 418 Stücke:
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SQ3418EV-T1_BE3 sq3418ev.pdf
SQ3418EV-T1_BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
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3000+0.48 EUR
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SQ3418EV-T1_BE3 sq3418ev.pdf
SQ3418EV-T1_BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 32830 Stücke:
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17+1.24 EUR
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SIHFU310-GE3 sihfr310.pdf
SIHFU310-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 400V
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 2396 Stücke:
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11+2.03 EUR
75+0.87 EUR
150+0.77 EUR
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SUP60061EL-GE3 sup60061el.pdf
SUP60061EL-GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 80 V (D-S) MOSFET TO-2
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 40 V
auf Bestellung 697 Stücke:
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3+8.44 EUR
10+5.59 EUR
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SIHP5N80AE-GE3 sihp5n80ae.pdf
SIHP5N80AE-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V
auf Bestellung 988 Stücke:
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6+3.71 EUR
50+1.78 EUR
100+1.61 EUR
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SIHA25N50E-GE3 siha25n50e.pdf
SIHA25N50E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 500V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V
Produkt ist nicht verfügbar
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SIHA25N50E-GE3 siha25n50e.pdf
SIHA25N50E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 500V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V
auf Bestellung 996 Stücke:
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3+8.21 EUR
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SI1467DH-T1-E3 si1467dh.pdf
SI1467DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.51 EUR
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SI1467DH-T1-E3 si1467dh.pdf
SI1467DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 5095 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.07 EUR
17+1.3 EUR
100+0.84 EUR
500+0.65 EUR
1000+0.6 EUR
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SI3476DV-T1-BE3 si3476dv.pdf
SI3476DV-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI3476DV-T1-BE3 si3476dv.pdf
SI3476DV-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 2372 Stücke:
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14+1.59 EUR
22+0.99 EUR
100+0.64 EUR
500+0.49 EUR
1000+0.44 EUR
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SIHK065N60E-T1-GE3 sihk065n60e.pdf
SIHK065N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 1
Rds On (Max) @ Id, Vgs: 68mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 192W (Tc)
Produkt ist nicht verfügbar
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SIHK065N60E-T1-GE3 sihk065n60e.pdf
SIHK065N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 1
Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 68mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Power Dissipation (Max): 192W (Tc)
Packaging: Cut Tape (CT)
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SIHK045N60EF-T1GE3 sihk045n60ef.pdf
SIHK045N60EF-T1GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 17A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 100 V
Produkt ist nicht verfügbar
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SIHK045N60EF-T1GE3 sihk045n60ef.pdf
SIHK045N60EF-T1GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 17A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 100 V
auf Bestellung 1783 Stücke:
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SIHK125N60EF-T1GE3 sihk125n60ef.pdf
SIHK125N60EF-T1GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1863 pF @ 100 V
Produkt ist nicht verfügbar
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SIHK125N60EF-T1GE3 sihk125n60ef.pdf
SIHK125N60EF-T1GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1863 pF @ 100 V
auf Bestellung 1995 Stücke:
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10+8.07 EUR
100+5.82 EUR
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SIHF840LCS-GE3 sihf840l.pdf
SIHF840LCS-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
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DG417LEDY-GE3
DG417LEDY-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Voltage - Supply, Single (V+): 3V ~ 16V
Part Status: Active
Produkt ist nicht verfügbar
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SQ4920EY-T1_BE3 sq4920ey.pdf
SQ4920EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQ4920EY-T1_BE3 sq4920ey.pdf
SQ4920EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1057 Stücke:
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5+4.76 EUR
10+3.05 EUR
100+2.08 EUR
500+1.67 EUR
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SIZF5302DT-T1-RE3 sizf5302dt.pdf
SIZF5302DT-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 28.1A PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 48.1W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
Part Status: Active
Produkt ist nicht verfügbar
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SIZF5302DT-T1-RE3 sizf5302dt.pdf
SIZF5302DT-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 28.1A PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 48.1W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
Part Status: Active
auf Bestellung 2351 Stücke:
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5+5.07 EUR
10+3.27 EUR
100+2.25 EUR
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SIZF5300DT-T1-GE3 sizf5300dt.pdf
SIZF5300DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 35A PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 56.8W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 125A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
Part Status: Active
Produkt ist nicht verfügbar
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SIZF5300DT-T1-GE3 sizf5300dt.pdf
SIZF5300DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 35A PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 56.8W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 125A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
Part Status: Active
auf Bestellung 2317 Stücke:
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4+5.71 EUR
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100+2.56 EUR
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SIZF928DT-T1-GE3 sizf928dt.pdf
SIZF928DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 33A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.45mOhm @ 10A, 10V, 0.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
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3000+1.45 EUR
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SIZF928DT-T1-GE3 sizf928dt.pdf
SIZF928DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 33A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.45mOhm @ 10A, 10V, 0.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
auf Bestellung 6064 Stücke:
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5+4.9 EUR
10+3.17 EUR
100+2.18 EUR
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SQJB44EP-T1_GE3 sqjb44ep.pdf
SQJB44EP-T1_GE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 40-V (D-S) MOSFET
Produkt ist nicht verfügbar
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SQJB44EP-T1_GE3 sqjb44ep.pdf
SQJB44EP-T1_GE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 40-V (D-S) MOSFET
Produkt ist nicht verfügbar
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SQJB48EP-T1_GE3 sqjb48ep.pdf
SQJB48EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQJB48EP-T1_GE3 sqjb48ep.pdf
SQJB48EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2910 Stücke:
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8+2.87 EUR
10+2.34 EUR
100+1.82 EUR
500+1.55 EUR
1000+1.26 EUR
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SQJA86EP-T1_BE3 sqja86ep.pdf
SQJA86EP-T1_BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.73 EUR
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SQJA86EP-T1_BE3 sqja86ep.pdf
SQJA86EP-T1_BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 5539 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.76 EUR
15+1.45 EUR
100+1.13 EUR
500+0.95 EUR
1000+0.77 EUR
Mindestbestellmenge: 12 Stücke
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SQJ910AEP-T1_BE3 sqj910aep.pdf
SQJ910AEP-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ910AEP-T1_BE3 sqj910aep.pdf
SQJ910AEP-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.39 EUR
11+1.95 EUR
100+1.51 EUR
500+1.29 EUR
1000+1.05 EUR
Mindestbestellmenge: 9 Stücke
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SQJ992EP-T1_BE3 sqj992ep.pdf
SQJ992EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ992EP-T1_BE3 sqj992ep.pdf
SQJ992EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQJB80EP-T1_BE3 sqjb80ep.pdf
SQJB80EP-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 80V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJB80EP-T1_BE3 sqjb80ep.pdf
SQJB80EP-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 80V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.18 EUR
12+1.8 EUR
100+1.39 EUR
500+1.18 EUR
1000+0.96 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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