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SQJ914EP-T1_BE3 SQJ914EP-T1_BE3 Vishay Siliconix sqj914ep.pdf Description: DUAL N-CHANNEL 30-V (D-S) 175C M
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SQJ914EP-T1_BE3 SQJ914EP-T1_BE3 Vishay Siliconix sqj914ep.pdf Description: DUAL N-CHANNEL 30-V (D-S) 175C M
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SQJB04ELP-T1_GE3 SQJB04ELP-T1_GE3 Vishay Siliconix sqjb04elp.pdf Description: MOSFET 2N-CH 40V 30A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 10V
Drain to Source Voltage (Vdss): 40V
Power - Max: 27W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
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SQJB04ELP-T1_GE3 SQJB04ELP-T1_GE3 Vishay Siliconix sqjb04elp.pdf Description: MOSFET 2N-CH 40V 30A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 27W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
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SQJ992EP-T2_GE3 SQJ992EP-T2_GE3 Vishay Siliconix sqj992ep.pdf Description: MOSFET 2N-CH 60V 15A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 34W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
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SQJ992EP-T2_GE3 SQJ992EP-T2_GE3 Vishay Siliconix sqj992ep.pdf Description: MOSFET 2N-CH 60V 15A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 34W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
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SQJB46ELP-T1_BE3 SQJB46ELP-T1_BE3 Vishay Siliconix sqjb46elp.pdf Description: DUAL N-CHANNEL 40-V (D-S) 175C M
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SQJB46ELP-T1_BE3 SQJB46ELP-T1_BE3 Vishay Siliconix sqjb46elp.pdf Description: DUAL N-CHANNEL 40-V (D-S) 175C M
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SQJB60EP-T1_BE3 SQJB60EP-T1_BE3 Vishay Siliconix sqjb60ep.pdf Description: DUAL N-CHANNEL 60-V (D-S) 175C M
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SQJB60EP-T1_BE3 SQJB60EP-T1_BE3 Vishay Siliconix sqjb60ep.pdf Description: DUAL N-CHANNEL 60-V (D-S) 175C M
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SQJ844AEP-T1_BE3 SQJ844AEP-T1_BE3 Vishay Siliconix sqj844aep.pdf Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
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SQJ844AEP-T1_BE3 SQJ844AEP-T1_BE3 Vishay Siliconix sqj844aep.pdf Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
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SQJ952EP-T1_BE3 SQJ952EP-T1_BE3 Vishay Siliconix sqj952ep.pdf Description: DUAL N-CHANNEL 60-V (D-S) 175C M
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SQJ952EP-T1_BE3 SQJ952EP-T1_BE3 Vishay Siliconix sqj952ep.pdf Description: DUAL N-CHANNEL 60-V (D-S) 175C M
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SQJB00EP-T1_BE3 SQJB00EP-T1_BE3 Vishay Siliconix sqjb00ep.pdf Description: DUAL N-CHANNEL 60-V (D-S) 175C M
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SQJB00EP-T1_BE3 SQJB00EP-T1_BE3 Vishay Siliconix sqjb00ep.pdf Description: DUAL N-CHANNEL 60-V (D-S) 175C M
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SQJB40EP-T1_BE3 SQJB40EP-T1_BE3 Vishay Siliconix sqjb40ep.pdf Description: MOSFET 2N-CH 40V 30A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 34W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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SQJB40EP-T1_BE3 SQJB40EP-T1_BE3 Vishay Siliconix sqjb40ep.pdf Description: MOSFET 2N-CH 40V 30A PPAK SO8
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 34W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
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SIC471ED-T1-GE3 SIC471ED-T1-GE3 Vishay Siliconix sic47x.pdf Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 50.6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
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SIC471ED-T1-GE3 SIC471ED-T1-GE3 Vishay Siliconix sic47x.pdf Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 50.6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
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SI2312CDS-T1-BE3 SI2312CDS-T1-BE3 Vishay Siliconix si2312cd.pdf Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
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SI2312CDS-T1-BE3 SI2312CDS-T1-BE3 Vishay Siliconix si2312cd.pdf Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
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SIC789CD-T1-GE3 SIC789CD-T1-GE3 Vishay Siliconix sic789a.pdf Description: IC HALF BRIDGE DRIVER 60A PPAK
Packaging: Tape & Reel (TR)
Part Status: Active
Load Type: Inductive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP66-40
Voltage - Load: 4.5V ~ 18V
Technology: Power MOSFET
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP66-40
Features: Bootstrap Circuit, Diode Emulation, Status Flag
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SIC789CD-T1-GE3 SIC789CD-T1-GE3 Vishay Siliconix sic789a.pdf Description: IC HALF BRIDGE DRIVER 60A PPAK
Package / Case: PowerPAK® MLP66-40
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP66-40
Voltage - Load: 4.5V ~ 18V
Technology: Power MOSFET
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
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SQJQ112ER-T1_GE3 SQJQ112ER-T1_GE3 Vishay Siliconix sqjq112er.pdf Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
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SQJQ112ER-T1_GE3 SQJQ112ER-T1_GE3 Vishay Siliconix sqjq112er.pdf Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
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500+3.74 EUR
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SQJQ112E-T1_GE3 SQJQ112E-T1_GE3 Vishay Siliconix sqjq112e.pdf Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Qualification: AEC-Q101
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2000+3.3 EUR
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SQJA80EP-T1_BE3 SQJA80EP-T1_BE3 Vishay Siliconix sqja80ep-.pdf Description: N-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
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SQJA80EP-T1_BE3 SQJA80EP-T1_BE3 Vishay Siliconix sqja80ep-.pdf Description: N-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
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SQS460EN-T1_BE3 SQS460EN-T1_BE3 Vishay Siliconix sqs460en.pdf Description: MOSFET N-CH 60V 8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Qualification: AEC-Q101
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SQS460EN-T1_BE3 SQS460EN-T1_BE3 Vishay Siliconix sqs460en.pdf Description: MOSFET N-CH 60V 8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Qualification: AEC-Q101
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SIC468EVB-E SIC468EVB-E Vishay Siliconix sic46x.pdf Description: EVAL BOARD FOR SIC468
Packaging: Box
Voltage - Output: 0.8V ~ 15V
Voltage - Input: 4.5V ~ 60V
Current - Output: 4A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC468
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
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SIC431AEVB-A SIC431AEVB-A Vishay Siliconix sic431.pdf Description: EVAL BOARD FOR SIC431
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 4.5V ~ 24V
Current - Output: 24A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC431
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
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SIC467EVB-D SIC467EVB-D Vishay Siliconix sic46x.pdf Description: EVAL BOARD FOR SIC467
Packaging: Box
Voltage - Output: 0.8V ~ 15V
Voltage - Input: 4.5V ~ 60V
Current - Output: 6A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC467
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
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SIC466ED-T1-GE3 SIC466ED-T1-GE3 Vishay Siliconix sic46x.pdf Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 10A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 60V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 15V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
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SIC466ED-T1-GE3 SIC466ED-T1-GE3 Vishay Siliconix sic46x.pdf Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 10A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 60V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 15V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
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SIC478ED-T1-GE3 SIC478ED-T1-GE3 Vishay Siliconix sic47x.pdf Description: IC REG BCK ADJ POWERPAK MLP55-27
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 24V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP55-27
Topology: Buck
Voltage - Input (Max): 55V
Frequency - Switching: 100kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 5A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: PowerPAK® MLP55-27
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIC478ED-T1-GE3 SIC478ED-T1-GE3 Vishay Siliconix sic47x.pdf Description: IC REG BCK ADJ POWERPAK MLP55-27
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 24V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP55-27
Topology: Buck
Voltage - Input (Max): 55V
Frequency - Switching: 100kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 5A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: PowerPAK® MLP55-27
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SIC461EVB-A SIC461EVB-A Vishay Siliconix sic46x.pdf Description: EVAL BOARD FOR SIC461
Packaging: Box
Voltage - Output: 3.3V, 5V or 12V
Voltage - Input: 4.5V ~ 60V
Current - Output: 10A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC461
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
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SIC451EVB-A SIC451EVB-A Vishay Siliconix sic450_sic451_sic453.pdf Description: EVAL BOARD FOR SIC451
Packaging: Box
Voltage - Output: 0.3V ~ 12V
Voltage - Input: 4.5V ~ 20V
Current - Output: 25A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: SIC451
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Power - Output: 500mW
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SIC474EVB-B SIC474EVB-B Vishay Siliconix sic47x.pdf Description: EVAL BOARD FOR SIC474
Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: SIC474
Board Type: Fully Populated
Regulator Topology: Buck
Current - Output: 3A
Voltage - Input: 4.5V ~ 55V
Voltage - Output: 0.8V ~ 50V
Packaging: Box
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SIC473EVB-B SIC473EVB-B Vishay Siliconix sic47x.pdf Description: EVAL BOARD FOR SIC473
Packaging: Box
Voltage - Output: 0.8V ~ 50V
Voltage - Input: 4.5V ~ 55V
Current - Output: 5A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC473
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
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SIC472EVB-A SIC472EVB-A Vishay Siliconix sic47x.pdf Description: EVAL BOARD FOR SIC472
Packaging: Box
Voltage - Output: 0.8V ~ 50V
Voltage - Input: 4.5V ~ 55V
Current - Output: 8A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC472
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
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1+67.5 EUR
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SIC437AEVB-B SIC437AEVB-B Vishay Siliconix sic437.pdf Description: EVAL BOARD FOR SIC437
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 4.5V ~ 28V
Current - Output: 12A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC437
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
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SIC431BEVB-A SIC431BEVB-A Vishay Siliconix sic431.pdf Description: EVAL BOARD FOR SIC431
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 4.5V ~ 24V
Current - Output: 24A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC431
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 2 Stücke:
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SIC471EVB-A SIC471EVB-A Vishay Siliconix sic47x.pdf Description: EVAL BOARD FOR SIC471
Packaging: Box
Voltage - Output: 0.8V ~ 50V
Voltage - Input: 4.5V ~ 55V
Current - Output: 12A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC471
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
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IRFR320PBF-BE3 IRFR320PBF-BE3 Vishay Siliconix sihfr320.pdf Description: N-CHANNEL 400V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
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SIC431EVB Vishay Siliconix sic431.pdf Description: 3-24V,24V MICROBUCK DEMOBOARD
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 3V ~ 24V
Current - Output: 24A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC431
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
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DG1408EEN-T1-GE4 DG1408EEN-T1-GE4 Vishay Siliconix dg1408.pdf Description: IC MUX 8:1 4.7OHM 16QFN
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 200pA
Channel Capacitance (CS(off), CD(off)): 14pF, 89pF
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -64dB @ 1MHz
Charge Injection: 100pC
Voltage - Supply, Dual (V±): ±4.5V ~ 16.5V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-QFN (4x4)
-3db Bandwidth: 46MHz
On-State Resistance (Max): 4.7Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DG1408EEN-T1-GE4 DG1408EEN-T1-GE4 Vishay Siliconix dg1408.pdf Description: IC MUX 8:1 4.7OHM 16QFN
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 200pA
Channel Capacitance (CS(off), CD(off)): 14pF, 89pF
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -64dB @ 1MHz
Charge Injection: 100pC
Voltage - Supply, Dual (V±): ±4.5V ~ 16.5V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-QFN (4x4)
-3db Bandwidth: 46MHz
On-State Resistance (Max): 4.7Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Cut Tape (CT)
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100+9.21 EUR
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1000+8.33 EUR
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SIP32434ADN-T1E4 SIP32434ADN-T1E4 Vishay Siliconix sip32434.pdf Description: 6 A, 33 M, 2.8 V TO 23 V,EFUSE W
Packaging: Tape & Reel (TR)
Features: Latch Function, Power Good, Slew Rate Controlled
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
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SIP32434ADN-T1E4 SIP32434ADN-T1E4 Vishay Siliconix sip32434.pdf Description: 6 A, 33 M, 2.8 V TO 23 V,EFUSE W
Packaging: Cut Tape (CT)
Features: Latch Function, Power Good, Slew Rate Controlled
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
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SI3443DDV-T1-BE3 SI3443DDV-T1-BE3 Vishay Siliconix si3443ddv.pdf Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
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3000+0.2 EUR
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SI3443DDV-T1-BE3 SI3443DDV-T1-BE3 Vishay Siliconix si3443ddv.pdf Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
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SQM50N04-4m0L_GE3 SQM50N04-4m0L_GE3 Vishay Siliconix sqm50n04.pdf Description: MOSFET N-CHANNEL 40V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQD50N04_4M5LT4GE3 SQD50N04_4M5LT4GE3 Vishay Siliconix sqd50n04.pdf Description: MOSFET N-CH 40V 50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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SIHH105N60EF-T1GE3 SIHH105N60EF-T1GE3 Vishay Siliconix sihh105n60ef.pdf Description: EF SERIES POWER MOSFET WITH FAST
Input Capacitance (Ciss) (Max) @ Vds: 2099 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 174W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SIHH105N60EF-T1GE3 SIHH105N60EF-T1GE3 Vishay Siliconix sihh105n60ef.pdf Description: EF SERIES POWER MOSFET WITH FAST
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 174W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2099 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
auf Bestellung 2960 Stücke:
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2+13.34 EUR
10+9.04 EUR
100+6.83 EUR
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SI3493BDV-T1-BE3 SI3493BDV-T1-BE3 Vishay Siliconix si3493bdv.pdf Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V
auf Bestellung 3000 Stücke:
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3000+0.68 EUR
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SI3493BDV-T1-BE3 SI3493BDV-T1-BE3 Vishay Siliconix si3493bdv.pdf Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V
auf Bestellung 7429 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.62 EUR
13+1.65 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.77 EUR
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SQJ914EP-T1_BE3 sqj914ep.pdf
SQJ914EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Produkt ist nicht verfügbar
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SQJ914EP-T1_BE3 sqj914ep.pdf
SQJ914EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Produkt ist nicht verfügbar
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SQJB04ELP-T1_GE3 sqjb04elp.pdf
SQJB04ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 10V
Drain to Source Voltage (Vdss): 40V
Power - Max: 27W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.75 EUR
6000+0.7 EUR
9000+0.68 EUR
15000+0.64 EUR
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SQJB04ELP-T1_GE3 sqjb04elp.pdf
SQJB04ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 27W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
auf Bestellung 16695 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.87 EUR
12+1.81 EUR
100+1.2 EUR
500+0.94 EUR
1000+0.86 EUR
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SQJ992EP-T2_GE3 sqj992ep.pdf
SQJ992EP-T2_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 15A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 34W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.73 EUR
6000+0.69 EUR
9000+0.67 EUR
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SQJ992EP-T2_GE3 sqj992ep.pdf
SQJ992EP-T2_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 15A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 34W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
auf Bestellung 10919 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.76 EUR
15+1.44 EUR
100+1.12 EUR
500+0.95 EUR
1000+0.77 EUR
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SQJB46ELP-T1_BE3 sqjb46elp.pdf
SQJB46ELP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Produkt ist nicht verfügbar
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SQJB46ELP-T1_BE3 sqjb46elp.pdf
SQJB46ELP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Produkt ist nicht verfügbar
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SQJB60EP-T1_BE3 sqjb60ep.pdf
SQJB60EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SQJB60EP-T1_BE3 sqjb60ep.pdf
SQJB60EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
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SQJ844AEP-T1_BE3 sqj844aep.pdf
SQJ844AEP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SQJ844AEP-T1_BE3 sqj844aep.pdf
SQJ844AEP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SQJ952EP-T1_BE3 sqj952ep.pdf
SQJ952EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
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SQJ952EP-T1_BE3 sqj952ep.pdf
SQJ952EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
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SQJB00EP-T1_BE3 sqjb00ep.pdf
SQJB00EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SQJB00EP-T1_BE3 sqjb00ep.pdf
SQJB00EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
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SQJB40EP-T1_BE3 sqjb40ep.pdf
SQJB40EP-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 34W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.89 EUR
6000+0.84 EUR
9000+0.81 EUR
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SQJB40EP-T1_BE3 sqjb40ep.pdf
SQJB40EP-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 34W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.14 EUR
12+1.76 EUR
100+1.37 EUR
500+1.17 EUR
1000+0.94 EUR
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SIC471ED-T1-GE3 sic47x.pdf
SIC471ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 50.6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
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SIC471ED-T1-GE3 sic47x.pdf
SIC471ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 50.6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
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SI2312CDS-T1-BE3 si2312cd.pdf
SI2312CDS-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.31 EUR
6000+0.29 EUR
9000+0.27 EUR
Mindestbestellmenge: 3000 Stücke
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SI2312CDS-T1-BE3 si2312cd.pdf
SI2312CDS-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
auf Bestellung 11096 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.36 EUR
26+0.83 EUR
100+0.54 EUR
500+0.4 EUR
1000+0.37 EUR
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SIC789CD-T1-GE3 sic789a.pdf
SIC789CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 60A PPAK
Packaging: Tape & Reel (TR)
Part Status: Active
Load Type: Inductive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP66-40
Voltage - Load: 4.5V ~ 18V
Technology: Power MOSFET
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP66-40
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Produkt ist nicht verfügbar
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SIC789CD-T1-GE3 sic789a.pdf
SIC789CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 60A PPAK
Package / Case: PowerPAK® MLP66-40
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP66-40
Voltage - Load: 4.5V ~ 18V
Technology: Power MOSFET
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
auf Bestellung 1835 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.99 EUR
10+5.38 EUR
25+5.09 EUR
100+4.41 EUR
250+4.19 EUR
500+3.75 EUR
1000+3.17 EUR
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SQJQ112ER-T1_GE3 sqjq112er.pdf
SQJQ112ER-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
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AnzahlPrivatkunde
2000+3.46 EUR
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SQJQ112ER-T1_GE3 sqjq112er.pdf
SQJQ112ER-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 2531 Stücke:
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3+9.59 EUR
10+6.35 EUR
100+4.52 EUR
500+3.74 EUR
1000+3.49 EUR
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SQJQ112E-T1_GE3 sqjq112e.pdf
SQJQ112E-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+3.3 EUR
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SQJA80EP-T1_BE3 sqja80ep-.pdf
SQJA80EP-T1_BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Produkt ist nicht verfügbar
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SQJA80EP-T1_BE3 sqja80ep-.pdf
SQJA80EP-T1_BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Produkt ist nicht verfügbar
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SQS460EN-T1_BE3 sqs460en.pdf
SQS460EN-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.96 EUR
6000+0.89 EUR
9000+0.87 EUR
15000+0.83 EUR
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SQS460EN-T1_BE3 sqs460en.pdf
SQS460EN-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 55573 Stücke:
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AnzahlPrivatkunde
6+3.53 EUR
10+2.24 EUR
100+1.51 EUR
500+1.19 EUR
1000+1.09 EUR
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SIC468EVB-E sic46x.pdf
SIC468EVB-E
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC468
Packaging: Box
Voltage - Output: 0.8V ~ 15V
Voltage - Input: 4.5V ~ 60V
Current - Output: 4A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC468
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+74.24 EUR
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SIC431AEVB-A sic431.pdf
SIC431AEVB-A
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC431
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 4.5V ~ 24V
Current - Output: 24A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC431
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+74.24 EUR
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SIC467EVB-D sic46x.pdf
SIC467EVB-D
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC467
Packaging: Box
Voltage - Output: 0.8V ~ 15V
Voltage - Input: 4.5V ~ 60V
Current - Output: 6A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC467
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+74.24 EUR
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SIC466ED-T1-GE3 sic46x.pdf
SIC466ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 10A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 60V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 15V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
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SIC466ED-T1-GE3 sic46x.pdf
SIC466ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 10A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 60V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 15V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 2125 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.08 EUR
10+7.69 EUR
25+7.09 EUR
100+6.44 EUR
250+6.16 EUR
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SIC478ED-T1-GE3 sic47x.pdf
SIC478ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BCK ADJ POWERPAK MLP55-27
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 24V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP55-27
Topology: Buck
Voltage - Input (Max): 55V
Frequency - Switching: 100kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 5A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: PowerPAK® MLP55-27
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIC478ED-T1-GE3 sic47x.pdf
SIC478ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BCK ADJ POWERPAK MLP55-27
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 24V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP55-27
Topology: Buck
Voltage - Input (Max): 55V
Frequency - Switching: 100kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 5A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: PowerPAK® MLP55-27
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SIC461EVB-A sic46x.pdf
SIC461EVB-A
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC461
Packaging: Box
Voltage - Output: 3.3V, 5V or 12V
Voltage - Input: 4.5V ~ 60V
Current - Output: 10A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC461
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+68.46 EUR
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SIC451EVB-A sic450_sic451_sic453.pdf
SIC451EVB-A
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC451
Packaging: Box
Voltage - Output: 0.3V ~ 12V
Voltage - Input: 4.5V ~ 20V
Current - Output: 25A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: SIC451
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Power - Output: 500mW
auf Bestellung 3 Stücke:
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AnzahlPrivatkunde
1+74.24 EUR
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SIC474EVB-B sic47x.pdf
SIC474EVB-B
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC474
Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: SIC474
Board Type: Fully Populated
Regulator Topology: Buck
Current - Output: 3A
Voltage - Input: 4.5V ~ 55V
Voltage - Output: 0.8V ~ 50V
Packaging: Box
auf Bestellung 1 Stücke:
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AnzahlPrivatkunde
1+68.46 EUR
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SIC473EVB-B sic47x.pdf
SIC473EVB-B
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC473
Packaging: Box
Voltage - Output: 0.8V ~ 50V
Voltage - Input: 4.5V ~ 55V
Current - Output: 5A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC473
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+69.62 EUR
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SIC472EVB-A sic47x.pdf
SIC472EVB-A
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC472
Packaging: Box
Voltage - Output: 0.8V ~ 50V
Voltage - Input: 4.5V ~ 55V
Current - Output: 8A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC472
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 2 Stücke:
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AnzahlPrivatkunde
1+67.5 EUR
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SIC437AEVB-B sic437.pdf
SIC437AEVB-B
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC437
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 4.5V ~ 28V
Current - Output: 12A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC437
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+74.24 EUR
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SIC431BEVB-A sic431.pdf
SIC431BEVB-A
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC431
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 4.5V ~ 24V
Current - Output: 24A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC431
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+74.24 EUR
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SIC471EVB-A sic47x.pdf
SIC471EVB-A
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIC471
Packaging: Box
Voltage - Output: 0.8V ~ 50V
Voltage - Input: 4.5V ~ 55V
Current - Output: 12A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC471
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+68.46 EUR
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IRFR320PBF-BE3 sihfr320.pdf
IRFR320PBF-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 400V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SIC431EVB sic431.pdf
Hersteller: Vishay Siliconix
Description: 3-24V,24V MICROBUCK DEMOBOARD
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 3V ~ 24V
Current - Output: 24A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC431
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
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DG1408EEN-T1-GE4 dg1408.pdf
DG1408EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC MUX 8:1 4.7OHM 16QFN
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 200pA
Channel Capacitance (CS(off), CD(off)): 14pF, 89pF
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -64dB @ 1MHz
Charge Injection: 100pC
Voltage - Supply, Dual (V±): ±4.5V ~ 16.5V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-QFN (4x4)
-3db Bandwidth: 46MHz
On-State Resistance (Max): 4.7Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DG1408EEN-T1-GE4 dg1408.pdf
DG1408EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC MUX 8:1 4.7OHM 16QFN
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 200pA
Channel Capacitance (CS(off), CD(off)): 14pF, 89pF
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -64dB @ 1MHz
Charge Injection: 100pC
Voltage - Supply, Dual (V±): ±4.5V ~ 16.5V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-QFN (4x4)
-3db Bandwidth: 46MHz
On-State Resistance (Max): 4.7Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2459 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.08 EUR
10+10.88 EUR
25+10.08 EUR
100+9.21 EUR
250+8.78 EUR
500+8.53 EUR
1000+8.33 EUR
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SIP32434ADN-T1E4 sip32434.pdf
SIP32434ADN-T1E4
Hersteller: Vishay Siliconix
Description: 6 A, 33 M, 2.8 V TO 23 V,EFUSE W
Packaging: Tape & Reel (TR)
Features: Latch Function, Power Good, Slew Rate Controlled
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.32 EUR
5000+1.3 EUR
7500+1.27 EUR
Mindestbestellmenge: 2500 Stücke
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SIP32434ADN-T1E4 sip32434.pdf
SIP32434ADN-T1E4
Hersteller: Vishay Siliconix
Description: 6 A, 33 M, 2.8 V TO 23 V,EFUSE W
Packaging: Cut Tape (CT)
Features: Latch Function, Power Good, Slew Rate Controlled
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
auf Bestellung 9953 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.68 EUR
11+1.96 EUR
25+1.77 EUR
100+1.57 EUR
250+1.48 EUR
500+1.42 EUR
1000+1.4 EUR
Mindestbestellmenge: 8 Stücke
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SI3443DDV-T1-BE3 si3443ddv.pdf
SI3443DDV-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.2 EUR
6000+0.19 EUR
9000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
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SI3443DDV-T1-BE3 si3443ddv.pdf
SI3443DDV-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
auf Bestellung 11736 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
37+0.57 EUR
100+0.37 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 23 Stücke
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SQM50N04-4m0L_GE3 sqm50n04.pdf
SQM50N04-4m0L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 40V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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SQD50N04_4M5LT4GE3 sqd50n04.pdf
SQD50N04_4M5LT4GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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SIHH105N60EF-T1GE3 sihh105n60ef.pdf
SIHH105N60EF-T1GE3
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Input Capacitance (Ciss) (Max) @ Vds: 2099 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 174W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SIHH105N60EF-T1GE3 sihh105n60ef.pdf
SIHH105N60EF-T1GE3
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 174W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2099 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.34 EUR
10+9.04 EUR
100+6.83 EUR
Mindestbestellmenge: 2 Stücke
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SI3493BDV-T1-BE3 si3493bdv.pdf
SI3493BDV-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.68 EUR
Mindestbestellmenge: 3000 Stücke
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SI3493BDV-T1-BE3 si3493bdv.pdf
SI3493BDV-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V
auf Bestellung 7429 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.62 EUR
13+1.65 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.77 EUR
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