Produkte > DTD
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
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| DTD04S01 | DENMOS | auf Bestellung 820 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| DTD05101 | DENMOS | auf Bestellung 5219 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| DTD05202 | DENMOS | auf Bestellung 690 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| DTD11003 | DENMOS | auf Bestellung 635 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| DTD113/DTD113EK | ИэЕЖ/ | 07+ SOT-23 | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD113E | onsemi | Description: SMALL SIGNAL BIPOLAR TRANSISTOR | auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD113ECHZGT116 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 1kΩ Anzahl je Verpackung: 20 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD113ECHZGT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 0.5A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V Supplier Device Package: SST3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD113ECHZGT116 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 1kΩ | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD113ECHZGT116 | ROHM | Description: ROHM - DTD113ECHZGT116 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 1 kohm, 1 kohm tariffCode: 85412100 Dauer-Kollektorstrom Ic: 500mA Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 33hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 1kohm Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 1kohm euEccn: NLR Verlustleistung: 200mW Polarität des Digitaltransistors: Einfach NPN Bauform - Transistor: SOT-23 Bauform - HF-Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Kollektor-Emitter-Spannung V(br)ceo: 50V Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Widerstandsverhältnis R1/R2: 1Verhältnis Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 1162 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD113ECHZGT116 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased NPN SOT-23 1kO Input Resist | auf Bestellung 791 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD113ECHZGT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 0.5A SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V Supplier Device Package: SST3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms Qualification: AEC-Q101 | auf Bestellung 2980 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD113ECT116 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased NPN 500mA/50V w/bias resistors | auf Bestellung 2311 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD113ECT116 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW 3-Pin SOT-23 T/R | auf Bestellung 2163 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD113ECT116 | Rohm Semiconductor | Description: NPN 500MA/50V DIGITAL TRANSISTOR | auf Bestellung 3 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD113ECT116 | ROHM SEMICONDUCTOR | DTD113ECT116 NPN SMD transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD113ECT116 | Rohm Semiconductor | Description: NPN 500MA/50V DIGITAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD113EK | auf Bestellung 6817 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| DTD113EKFRAT146 | Rohm Semiconductor | Description: DTD113EKFRA IS A TRANSISTOR WITH | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD113EKFRAT146 | Rohm Semiconductor | Description: DTD113EKFRA IS A TRANSISTOR WITH | auf Bestellung 2955 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD113EKFRAT146 | ROHM Semiconductor | Digital Transistors NPN 50V 0.5A 1kO SOT-346 | auf Bestellung 2698 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD113EKT146 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW 3-Pin SMT T/R | auf Bestellung 128 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD113EKT146 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 1kΩ Anzahl je Verpackung: 10 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD113EKT146 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 1kΩ | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD113EKT146 | ROHM | Description: ROHM - DTD113EKT146 - Bipolarer Transistor, pre-biased/digital, digital, Einfach NPN, 50 V, 500 mA, 1 kohm, 1 kohm tariffCode: 85412100 Dauer-Kollektorstrom Ic: 500mA Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 33hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 1kohm Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 1kohm euEccn: NLR Verlustleistung: 200mW Polarität des Digitaltransistors: Einfach NPN Bauform - Transistor: SOT-346 Bauform - HF-Transistor: SOT-346 Kollektor-Emitter-Spannung V(br)ceo: 50V Anzahl der Pins: 3 Pins Produktpalette: DTD113E Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Widerstandsverhältnis R1/R2: - Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 1005 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD113EKT146 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW 3-Pin SMT T/R | auf Bestellung 1974 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD113EKT146 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 200MW SMT3 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD113EKT146 | ROHM Semiconductor | Digital Transistors NPN 50V 500MA | auf Bestellung 1733 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD113EKT146 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW 3-Pin SMT T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD113EKT146 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW 3-Pin SMT T/R | auf Bestellung 16038 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD113EKT146 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 200MW SMT3 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD113ES | ROHM | TO-92S | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD113ES | ROHM | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| DTD113ZCHZGT116 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD113ZCHZGT116 | ROHM Semiconductor | Digital Transistors NPN SOT-23 1kO Input Resist | auf Bestellung 14467 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD113ZCHZGT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 0.5A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 42000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD113ZCHZGT116 | ROHM | Description: ROHM - DTD113ZCHZGT116 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 1 kohm, 10 kohm tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 82hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 500mA usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-23 productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 4802 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD113ZCHZGT116 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 2090 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD113ZCHZGT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 0.5A SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 45952 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD113ZCHZGT116 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 82 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD113ZCHZGT116 | ROHM | Description: ROHM - DTD113ZCHZGT116 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 1 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 82hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 1kohm Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-23 Produktpalette: - productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 7682 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD113ZCHZGT116 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 82 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Anzahl je Verpackung: 20 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD113ZCT116 | ROHM | Description: ROHM - DTD113ZCT116 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 1 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 82hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 1kohm Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3 Pins Produktpalette: DTD113Z Series productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 10100 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD113ZCT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 6491 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD113ZCT116 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 82 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD113ZCT116 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 82 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Anzahl je Verpackung: 20 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD113ZCT116 | ROHM | Description: ROHM - DTD113ZCT116 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 1 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 82hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 1kohm Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3 Pins Produktpalette: DTD113Z Series productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 13365 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD113ZCT116 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW 3-Pin SOT-23 T/R | auf Bestellung 8600 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD113ZCT116 | ROHM Semiconductor | Digital Transistors RECOMMENDED ALT 755-DTD113ZUT106 | auf Bestellung 26386 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD113ZCT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD113ZK | ROHM | auf Bestellung 5850 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| DTD113ZK | ROHM | SOT23 | auf Bestellung 7000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD113ZKT146 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 3-Pin SMT T/R | auf Bestellung 73942 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD113ZKT146 | ROHM | Description: ROHM - DTD113ZKT146 - Bipolarer Transistor, pre-biased/digital, digital, Einfach NPN, 50 V, 500 mA, 1 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 82hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 1kohm Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-346 Produktpalette: DTD113Z Series productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 690 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD113ZKT146 | ROHM Semiconductor | Digital Transistors DIGIT NPN 50V 500MA | auf Bestellung 9630 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD113ZKT146 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 82 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Anzahl je Verpackung: 10 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD113ZKT146 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 3-Pin SMT T/R | auf Bestellung 11812 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD113ZKT146 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SMT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 162238 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD113ZKT146 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 3-Pin SMT T/R | auf Bestellung 33221 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD113ZKT146 | ROHM | Description: ROHM - DTD113ZKT146 - Bipolarer Transistor, pre-biased/digital, digital, Einfach NPN, 50 V, 500 mA, 1 kohm, 10 kohm tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 82hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 500mA usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-346 Produktpalette: DTD113Z Series productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 1405 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD113ZKT146 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 3-Pin SMT T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD113ZKT146 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 159000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD113ZKT146 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 82 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD113ZS | auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| DTD113ZSTP | Rohm Semiconductor | Description: TRANS DIGITAL BJT NPN 500MA 3-PI Packaging: Tape & Reel (TR) Package / Case: SC-72 Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V Supplier Device Package: SPT Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD113ZSTP | DTD113ZSTP Транзисторы Digital | auf Bestellung 5013 Stücke: Lieferzeit 7-21 Tag (e) | ||||||||||||||||||
| DTD113ZU | ROHM | 07+ SOT-323 | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD113ZU | ROHM | SOT323 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD113ZU T106 | ROHM | 0239+ | auf Bestellung 2400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD113ZU T106 | ROHM | SOT23/SOT323 | auf Bestellung 1651 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD113ZUT106 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 3-Pin UMT T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD113ZUT106 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A UMT3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 6838 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD113ZUT106 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC70,SOT323; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 82 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD113ZUT106 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC70,SOT323; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 82 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD113ZUT106 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A UMT3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD113ZUT106 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 3-Pin UMT T/R | auf Bestellung 42655 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD113ZUT106 | ROHM Semiconductor | Digital Transistors NPN 50V 500MA | auf Bestellung 31248 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD114ECHZGT116 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 1880 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD114ECHZGT116 | ROHM | Description: ROHM - DTD114ECHZGT116 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 10 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 56hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 805 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD114ECHZGT116 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 3880 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD114ECHZGT116 | ROHM Semiconductor | Digital Transistors NPN SOT-23 10kO Input Resist | auf Bestellung 4836 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD114ECHZGT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 0.5A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SST3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD114ECHZGT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 0.5A SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5628 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD114ECHZGT116 | ROHM | Description: ROHM - DTD114ECHZGT116 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 10 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 56hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 805 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD114ECT116 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased NPN 500mA/50V w/bias resistors | auf Bestellung 2940 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD114ECT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD114ECT116 | ROHM | Description: ROHM - DTD114ECT116 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 10 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 56hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3 Pins Produktpalette: DTD114E Series productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 521 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD114ECT116 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW 3-Pin SOT-23 T/R | auf Bestellung 2650 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD114ECT116 | ROHM | Description: ROHM - DTD114ECT116 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 10 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 56hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3 Pins Produktpalette: DTD114E Series productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 521 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD114ECT116 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW 3-Pin SOT-23 T/R | auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD114ECT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD114EK | ROHM | 07+ SOT-23 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD114EK | ROHM | SOT23 | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD114EK | ROHM | 09+ | auf Bestellung 3038 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD114EK-T146 | ROHM | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| DTD114EKFRA | ROHM Semiconductor | ROHM Semiconductor | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD114EKFRAT146 | ROHM Semiconductor | ROHM Semiconductor | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD114EKFRAT146 | ROHM | Description: ROHM - DTD114EKFRAT146 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 10 kohm, 10 kohm Dauer-Kollektorstrom Ic: 500 Transistormontage: Oberflächenmontage Basis-Eingangswiderstand R1: 10 MSL: MSL 1 - unbegrenzt Basis-Emitter-Widerstand R2: 10 Polarität des Digitaltransistors: Einfach NPN Bauform - HF-Transistor: SOT-346 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Kollektor-Emitter-Spannung V(br)ceo: 50 Anzahl der Pins: 3 Pins Produktpalette: - Widerstandsverhältnis R1/R2: 1 SVHC: No SVHC (10-Jun-2022) | auf Bestellung 2650 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD114EKFRAT146 | ROHM | Description: ROHM - DTD114EKFRAT146 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 10 kohm, 10 kohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 2650 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD114EKT146 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ | auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD114EKT146 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 87000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD114EKT146 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Anzahl je Verpackung: 5 Stücke | auf Bestellung 2995 Stücke: Lieferzeit 7-14 Tag (e) |
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| DTD114EKT146 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW 3-Pin SMT T/R | auf Bestellung 5350 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD114EKT146 | ROHM | Description: ROHM - DTD114EKT146 - Bipolarer Transistor, pre-biased/digital, BRT, Einfach NPN, 50 V, 500 mA, 10 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 56hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SC-59 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 1890 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD114EKT146 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW 3-Pin SMT T/R | auf Bestellung 429 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD114EKT146 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased DIGIT NPN 50V 500MA | auf Bestellung 48911 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD114EKT146 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SMT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 93093 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD114EKT146 | ROHM | Description: ROHM - DTD114EKT146 - Bipolarer Transistor, pre-biased/digital, BRT, Einfach NPN, 50 V, 500 mA, 10 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 56hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 10kohm Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SC-59 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 1890 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD114EKT146 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW 3-Pin SMT T/R | auf Bestellung 56494 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD114ES | ROHM | TO-92S | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD114ESTP | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SPT Packaging: Tape & Box (TB) Package / Case: SC-72 Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SPT Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD114GCHZGT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SST3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD114GCHZGT116 | ROHM Semiconductor | Digital Transistors DTD114GCHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver. | auf Bestellung 7644 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD114GCHZGT116 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD114GCHZGT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SST3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Qualification: AEC-Q101 | auf Bestellung 2885 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD114GCT116 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased NPN 500mA/50V w/bias resistors | auf Bestellung 3435 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD114GCT116 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW 3-Pin SOT-23 T/R | auf Bestellung 1964 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD114GCT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD114GCT116 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD114GCT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 3080 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD114GK T146 | ROHM | SOT23 | auf Bestellung 2893 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD114GKT146 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SMT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 6171 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD114GKT146 | ROHM | Description: ROHM - DTD114GKT146 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 56hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: - Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-346 Produktpalette: DTD114GK Series productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 868 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD114GKT146 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW 3-Pin SMT T/R | auf Bestellung 720 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD114GKT146 | ROHM | SOT-23 96+ | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD114GKT146 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW 3-Pin SMT T/R | auf Bestellung 195 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD114GKT146 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD114GKT146 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW 3-Pin SMT T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD114GKT146 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased NPN 50V 500MA | auf Bestellung 69 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD114GKT146 | ROHM | Description: ROHM - DTD114GKT146 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 10 kohm tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 56hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 500mA usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-346 Produktpalette: DTD114GK Series productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 868 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD114GKT146 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW 3-Pin SMT T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD120-12SX-F-W | ETA-USA | Desktop AC Adapters 12 vdc 100W 8.33A ADAPTER AC/DC | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD120-12SX-F-W6 | ETA-USA | Description: AC/DC DESKTOP ADAPTER 12V 100W Packaging: Bulk Size / Dimension: 6.69" L x 2.55" W x 1.52" H (170.0mm x 64.8mm x 38.5mm) Voltage - Output: 12V Output Connector: Power DIN, 4 Pin Voltage - Input: 90 ~ 264 VAC Cord Length: 39.4" (1.00m) Operating Temperature: 0°C ~ 40°C Applications: ITE (Commercial) Input Type: Cord (Sold Separately) Approval Agency: CE, CSA, TUV, UL Form: Desktop (Class I) Efficiency: Level VI Current - Output (Max): 8.33A Input Connector: IEC 320-C14 Region Utilized: International No Load Power Consumption: 300mW (Max) Part Status: Active Power (Watts): 100 W | auf Bestellung 3 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD120-12SX-F-W6 | ETA-USA | Desktop AC Adapters 120W 12V 8.33A | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD120-19SX-F-W | ETA-USA | Desktop AC Adapters 19 vdc 120W 6.3A AC/DC Adapter | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD120-19SX-F-W6 | ETA-USA | Description: AC/DC DESKTOP ADAPTER 19V 120W Packaging: Bulk Size / Dimension: 6.69" L x 2.55" W x 1.52" H (170.0mm x 64.8mm x 38.5mm) Voltage - Output: 19V Output Connector: Power DIN, 4 Pin Voltage - Input: 90 ~ 264 VAC Cord Length: 39.4" (1.00m) Operating Temperature: 0°C ~ 40°C Applications: ITE (Commercial) Input Type: Cord (Sold Separately) Approval Agency: CE, CSA, TUV, UL Form: Desktop (Class I) Efficiency: Level VI Current - Output (Max): 6.3A Input Connector: IEC 320-C14 Region Utilized: International No Load Power Consumption: 300mW (Max) Part Status: Active Power (Watts): 120 W | auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD120-19SX-F-W6 | ETA-USA | Desktop AC Adapters 120W 19V 6.3A | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD120-24SX-F-W | ETA-USA | Desktop AC Adapters 24vdc | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD120-24SX-F-W6 | ETA-USA | Desktop AC Adapters 120W 24V 5A | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD120-24SX-F-W6 | ETA-USA | Description: AC/DC DESKTOP ADAPTER 24V 120W Packaging: Bulk Size / Dimension: 6.69" L x 2.55" W x 1.52" H (170.0mm x 64.8mm x 38.5mm) Voltage - Output: 24V Output Connector: Power DIN, 4 Pin Voltage - Input: 90 ~ 264 VAC Cord Length: 39.4" (1.00m) Operating Temperature: 0°C ~ 40°C Applications: ITE (Commercial) Input Type: Cord (Sold Separately) Approval Agency: CE, CSA, TUV, UL Form: Desktop (Class I) Efficiency: Level VI Current - Output (Max): 5A Input Connector: IEC 320-C14 Region Utilized: International No Load Power Consumption: 300mW (Max) Part Status: Active Power (Watts): 120 W | auf Bestellung 2 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD120-36SX-F-W6 | ETA-USA | Desktop AC Adapters 120W 36V 3.3A | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD120-48SX-F-W6 | ETA-USA | Desktop AC Adapters 120W 48V 2.5A | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD120-48SX-F-W6 | ETA-USA | Description: AC-DC EXTERNAL POWER ADAPTER | auf Bestellung 30 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD120-SX-F-W | ETA-USA | Desktop AC Adapters 120W INPUT 90~264 | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD122JKT146 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased NPN 50V 500MA | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD122JKT146 | ROHM | 06+ROHS | auf Bestellung 695 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD122JKT146 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 200MW SMT3 | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD123ECHZGT116 | ROHM Semiconductor | Digital Transistors DTD123ECHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver. | auf Bestellung 5871 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD123ECHZGT116 | Rohm Semiconductor | Description: DTD123ECHZG IS THE HIGH RELIABIL Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms | auf Bestellung 2990 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD123ECHZGT116 | Rohm Semiconductor | Description: DTD123ECHZG IS THE HIGH RELIABIL Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD123ECT116 | ROHM | Description: ROHM - DTD123ECT116 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 2.2 kohm, 2.2 kohm SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD123ECT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms | auf Bestellung 6785 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD123ECT116 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased NPN 500mA/50V w/bias resistors | auf Bestellung 3000 Stücke: Lieferzeit 259-273 Tag (e) |
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| DTD123ECT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD123ECT116 | ROHM | Description: ROHM - DTD123ECT116 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 2.2 kohm, 2.2 kohm Dauer-Kollektorstrom Ic: 500 Transistormontage: Oberflächenmontage Basis-Eingangswiderstand R1: 2.2 MSL: MSL 1 - unbegrenzt Basis-Emitter-Widerstand R2: 2.2 Polarität des Digitaltransistors: Einfach NPN Bauform - HF-Transistor: SOT-23 Kollektor-Emitter-Spannung V(br)ceo: 50 Anzahl der Pins: 3 Pins Produktpalette: DTD123E Widerstandsverhältnis R1/R2: 1 SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD123EK | ROHM | SOT23/SOT323 | auf Bestellung 360 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD123EK | ROHM | 04+ SOT-23 | auf Bestellung 15100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD123EK | ROHM | SOT23 | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD123EK | ROHM | 11+ROHS SOT-23 | auf Bestellung 53500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD123EK T146 | ROHM | SOT23 | auf Bestellung 850 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD123EKFRAT146 | ROHM | Description: ROHM - DTD123EKFRAT146 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 2.2 kohm, 2.2 kohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 2595 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD123EKFRAT146 | ROHM | Description: ROHM - DTD123EKFRAT146 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 2.2 kohm, 2.2 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 39hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 2.2kohm Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 2.2kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-346 Produktpalette: - productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 2295 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD123EKT146 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased NPN 50V 500MA | auf Bestellung 2790 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD123EKT146 | ROHM SEMICONDUCTOR | DTD123EKT146 NPN SMD transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD123EKT146 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 200MW SMT3 | auf Bestellung 7538 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD123EKT146 | ROHM | Description: ROHM - DTD123EKT146 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 2.2 kohm, 2.2 kohm Dauer-Kollektorstrom Ic: 500 Transistormontage: Oberflächenmontage Basis-Eingangswiderstand R1: 2.2 MSL: MSL 1 - unbegrenzt Basis-Emitter-Widerstand R2: 2.2 Polarität des Digitaltransistors: Einfach NPN Bauform - HF-Transistor: SOT-346 Kollektor-Emitter-Spannung V(br)ceo: 50 Anzahl der Pins: 3 Pins Produktpalette: DTD123E Widerstandsverhältnis R1/R2: - SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD123EKT146 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 200MW SMT3 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD123TCHZGT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 0.5A SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 11846 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD123TCHZGT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 0.5A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 8846 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD123TCHZGT116 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased NPN SOT-23 2.2kO Input Resist | auf Bestellung 5831 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD123TCT116 | ROHM | Description: ROHM - DTD123TCT116 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 2.2 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 2.2kohm Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: - euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-23 Produktpalette: DTD123T Series productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 1356 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD123TCT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 40V 0.5A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD123TCT116 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased NPN 500mA/50V w/bias resistors | auf Bestellung 2880 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD123TCT116 | Rohm Semiconductor | Trans Digital BJT NPN 40V 500mA 200mW 3-Pin SOT-23 T/R | auf Bestellung 638 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD123TCT116 | ROHM | Description: ROHM - DTD123TCT116 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 2.2 kohm tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 500mA usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-23 Produktpalette: DTD123T Series productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 1356 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD123TCT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 40V 0.5A SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD123TK | ROHM | SOT23 | auf Bestellung 1103 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD123TKT146 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 40V 0.5A SMT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms | auf Bestellung 5920 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD123TKT146 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased NPN 50V 500MA | auf Bestellung 8629 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD123TKT146 | ROHM | Description: ROHM - DTD123TKT146 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 40 V, 500 mA, 2.2 kohm Dauer-Kollektorstrom Ic: 500 Transistormontage: Oberflächenmontage Basis-Eingangswiderstand R1: 2.2 MSL: MSL 1 - unbegrenzt Basis-Emitter-Widerstand R2: - Polarität des Digitaltransistors: Einfach NPN Bauform - HF-Transistor: SOT-346 Kollektor-Emitter-Spannung V(br)ceo: 40 Anzahl der Pins: 3 Pins Produktpalette: DTD123T Widerstandsverhältnis R1/R2: - SVHC: No SVHC (10-Jun-2022) | auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD123TKT146 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 40V 0.5A SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD123TKT146 | ROHM SEMICONDUCTOR | DTD123TKT146 NPN SMD transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD123TSTP | Rohm Semiconductor | Description: TRANS PREBIAS NPN 300MW SPT | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD123YCHZGT116 | ROHM | Description: ROHM - DTD123YCHZGT116 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 2.2 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 56hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 2.2kohm Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-23 Produktpalette: - productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 395 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD123YCHZGT116 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Anzahl je Verpackung: 20 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD123YCHZGT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD123YCHZGT116 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased DTD123YCHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver. | auf Bestellung 11541 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD123YCHZGT116 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD123YCHZGT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SST3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 | auf Bestellung 5960 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD123YCT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 10649 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD123YCT116 | ROHM | Description: ROHM - DTD123YCT116 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 2.2 kohm, 10 kohm Dauer-Kollektorstrom Ic: 500 Transistormontage: Oberflächenmontage Basis-Eingangswiderstand R1: 2.2 MSL: MSL 1 - unbegrenzt Basis-Emitter-Widerstand R2: 10 Polarität des Digitaltransistors: Einfach NPN Bauform - HF-Transistor: SOT-23 Kollektor-Emitter-Spannung V(br)ceo: 50 Anzahl der Pins: 3 Pins Produktpalette: DTD123Y Widerstandsverhältnis R1/R2: 0.22 SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD123YCT116 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased NPN 500mA/50V w/bias resistors | auf Bestellung 27421 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD123YCT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD123YCT116 | ROHM | Description: ROHM - DTD123YCT116 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 2.2 kohm, 10 kohm SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD123YCT116 | ROHM SEMICONDUCTOR | DTD123YCT116 NPN SMD transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD123YK | ROHM | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| DTD123YK | ROHM | SOT23 | auf Bestellung 84620 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD123YK | ROHM | 05+ SOT-23 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD123YK/F62 | auf Bestellung 4900 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| DTD123YKA | auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| DTD123YKFRAT146 | ROHM SEMICONDUCTOR | DTD123YKFRAT146 NPN SMD transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD123YKFRAT146 | ROHM | Description: ROHM - DTD123YKFRAT146 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 2.2 kohm, 10 kohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 1176 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD123YKFRAT146 | ROHM | Description: ROHM - DTD123YKFRAT146 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 2.2 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 56hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 2.2kohm Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-346 Anzahl der Pins: 3 Pins Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: -V | auf Bestellung 1031 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD123YKT146 | ROHM | Description: ROHM - DTD123YKT146 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 2.2 kohm, 10 kohm Dauer-Kollektorstrom Ic: 500 Transistormontage: Oberflächenmontage Basis-Eingangswiderstand R1: 2.2 MSL: MSL 1 - unbegrenzt Basis-Emitter-Widerstand R2: 10 Polarität des Digitaltransistors: Einfach NPN Bauform - HF-Transistor: SOT-346 Kollektor-Emitter-Spannung V(br)ceo: 50 Anzahl der Pins: 3 Pins Produktpalette: DTD123Y Widerstandsverhältnis R1/R2: - SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD123YKT146 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 200MW SMT3 | auf Bestellung 102000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD123YKT146 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 200MW SMT3 | auf Bestellung 102000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD123YKT146 | ROHM SEMICONDUCTOR | DTD123YKT146 NPN SMD transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD123YKT146 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased DIGIT NPN 50V 500MA SOT-346 | auf Bestellung 26652 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD123YKT146 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW 3-Pin SMT T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD123YKT147 | auf Bestellung 26000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| DTD13001 | DENMOS | auf Bestellung 1093 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| DTD133EK | auf Bestellung 910 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| DTD133HKT146 | auf Bestellung 14800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| DTD133HKT146 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 200MW SMT3 | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD143EC | ROHM | SOT23 | auf Bestellung 4500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD143EC | RICOH | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| DTD143ECHZGT116 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 47 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Anzahl je Verpackung: 20 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD143ECHZGT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 0.5A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD143ECHZGT116 | ROHM | Description: ROHM - DTD143ECHZGT116 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 4.7 kohm, 4.7 kohm tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 47hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 500mA usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-23 productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 3306 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD143ECHZGT116 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 47 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD143ECHZGT116 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD143ECHZGT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 0.5A SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 234 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD143ECHZGT116 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased NPN SOT-23 4.7kO Input Resist | auf Bestellung 2578 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD143ECHZGT116 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 234000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD143ECHZGT116 | ROHM | Description: ROHM - DTD143ECHZGT116 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 4.7 kohm, 4.7 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 47hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 4.7kohm Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 4.7kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-23 Produktpalette: - productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 3306 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD143ECHZGT116 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 200mW Automotive 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD143ECT116 Produktcode: 169680 | Transistoren > Bipolar-Transistoren NPN | Produkt ist nicht verfügbar | ||||||||||||||||||
| DTD143ECT116 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased NPN 500mA/50V w/bias resistors | auf Bestellung 5471 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD143ECT116 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 3-Pin SOT-23 T/R | auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD143ECT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | auf Bestellung 750 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD143ECT116 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 3-Pin SOT-23 T/R | auf Bestellung 1597 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD143ECT116 | ROHM | Description: ROHM - DTD143ECT116 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 4.7 kohm, 4.7 kohm tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 47hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 500mA usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-23 Produktpalette: DTD143E Series productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 2765 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD143ECT116 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 47 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Anzahl je Verpackung: 20 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD143ECT116 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD143ECT116 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 3-Pin SOT-23 T/R | auf Bestellung 3670 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD143ECT116 | ROHM | Description: ROHM - DTD143ECT116 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 4.7 kohm, 4.7 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 47hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 4.7kohm Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 4.7kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-23 Produktpalette: DTD143E Series productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 2765 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD143ECT116 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 47 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD143ECT216 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | auf Bestellung 921 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD143ECT216 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased DIGITAL NPN 500mA | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD143ECT216 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD143EK | ROHM | auf Bestellung 2300 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| DTD143EK | ROHM | SOT23 | auf Bestellung 29 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD143EK T146 | ROHM | SOT23-F23 | auf Bestellung 599 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD143EK T146 SOT23-F23 | ROHM | auf Bestellung 599 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| DTD143EKA | ROHM | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| DTD143EKFRAT146 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Supplier Device Package: SMT3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD143EKFRAT146 | ROHM | Description: ROHM - DTD143EKFRAT146 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 4.7 kohm, 4.7 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 47hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 4.7kohm Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 4.7kohm euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-346 Produktpalette: DTD143E Series productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 2048 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD143EKFRAT146 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased NPN 50V 0.5A 4.7kO SOT-346 | auf Bestellung 4964 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD143EKFRAT146 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SMT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Supplier Device Package: SMT3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 | auf Bestellung 1086 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD143EKFRAT146 | ROHM | Description: ROHM - DTD143EKFRAT146 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 4.7 kohm, 4.7 kohm tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 47hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 500mA usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-346 Produktpalette: DTD143E Series productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (17-Jan-2023) | auf Bestellung 2048 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD143EKT146 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 3-Pin SMT T/R | auf Bestellung 8520 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD143EKT146 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 47 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Anzahl je Verpackung: 10 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD143EKT146 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Supplier Device Package: SMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD143EKT146 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 47 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD143EKT146 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 3-Pin SMT T/R | auf Bestellung 2014 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD143EKT146 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 50V 0.5A SMT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Supplier Device Package: SMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | auf Bestellung 8209 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD143EKT146 | ROHM Semiconductor | Digital Transistors DIGIT NPN 50V 500MA | auf Bestellung 21270 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD143EKT146 | Rohm Semiconductor | Trans Digital BJT NPN 50V 500mA 3-Pin SMT T/R | auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD143EKT146/F23 | ROHM | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| DTD143EKT146SOT23-F23 | ROHM | auf Bestellung 2300 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| DTD143ES | ROHM | TO-92S | auf Bestellung 80000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD143ESTP | Rohm Semiconductor | Description: TRANS DIGITAL BJT NPN 500MA 3-PI Packaging: Tape & Reel (TR) Package / Case: SC-72 Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Supplier Device Package: SPT Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD143TK | ROHM | SOT-23 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD143TKT146 | Rohm Semiconductor | Trans Digital BJT NPN 40V 500mA 3-Pin SMT T/R | auf Bestellung 12073 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD143TKT146 | ROHM Semiconductor | Digital Transistors NPN 50V 500MA | auf Bestellung 52 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD143TKT146 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 40V 0.5A SMT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms | auf Bestellung 55 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD143TKT146 | Rohm Semiconductor | Trans Digital BJT NPN 40V 500mA 3-Pin SMT T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD143TKT146 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 40V 0.5A SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD152Z | MAKITA | Description: MAKITA - DTD152Z - 18V IMPACT DRIVER BODY ONLY tariffCode: 82051000 Schlagrate, max.: 3200BPM productTraceability: No rohsCompliant: YES Drehmoment: 165Nm Versorgungsspannung, V AC: 230V euEccn: NLR Batterie-/Akkuspannung: 18V hazardous: false rohsPhthalatesCompliant: TBA Eingangsleistung: -W usEccn: EAR99 Produktpalette: TUK SGACK902S Keystone Coupler SVHC: Boric acid (14-Jun-2023) | auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD153Z | MAKITA | Description: MAKITA - DTD153Z - 18V B/LESS IMPACT DRIVER - BARE UNIT tariffCode: 82051000 productTraceability: No rohsCompliant: YES euEccn: NLR Batterie-/Akkuspannung: 18V hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 Produktpalette: - SVHC: Boric acid (14-Jun-2023) | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTD17102 | DENMOS | auf Bestellung 659 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| DTD26101 | DENMOS | auf Bestellung 1134 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| DTD50 | FISNAR | Category: Dispensers Description: Dispenser; pneumatic; 50/50ml; 0÷6.9bar Type of device: dispenser Version: pneumatic Syringe capacity: 50/50ml Soldering equipment features: for use with square back cartridges Operating pressure: 0...6.9bar | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD50 | FISNAR | Category: Dispensers Description: Dispenser; pneumatic; 50/50ml; 0÷6.9bar Type of device: dispenser Version: pneumatic Syringe capacity: 50/50ml Soldering equipment features: for use with square back cartridges Operating pressure: 0...6.9bar Anzahl je Verpackung: 1 Stücke | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| DTD50-RB | FISNAR | Category: Dispensers Description: Dispenser; pneumatic; 50/50ml; 0÷6.9bar Type of device: dispenser Version: pneumatic Syringe capacity: 50/50ml Soldering equipment features: for use with round back cartridges Operating pressure: 0...6.9bar | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD50-RB | FISNAR | Category: Dispensers Description: Dispenser; pneumatic; 50/50ml; 0÷6.9bar Type of device: dispenser Version: pneumatic Syringe capacity: 50/50ml Soldering equipment features: for use with round back cartridges Operating pressure: 0...6.9bar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD513ZE | ROHM Semiconductor | Bipolar Transistors - Pre-Biased | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD513ZE3TL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 12V 0.5A EMT3 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD513ZE3TL | ROHM Semiconductor | Digital Transistors NPN, SOT-416, R1?R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor) | auf Bestellung 5305 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD513ZE3TL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 12V 0.5A EMT3 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 2829 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD513ZETL | ROHM Semiconductor | Bipolar Transistors - Pre-Biased TRANSISTOR | auf Bestellung 1060 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD513ZETL | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 12V; 0.5A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 12V Collector current: 0.5A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 140 Mounting: SMD Kind of package: reel; tape Frequency: 260MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD513ZETL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 12V 0.5A EMT3 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD513ZETL | ROHM | Description: ROHM - DTD513ZETL - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 1 kohm, 10 kohm Dauer-Kollektorstrom Ic: 500 Transistormontage: Oberflächenmontage Basis-Eingangswiderstand R1: 1 MSL: MSL 1 - unbegrenzt Basis-Emitter-Widerstand R2: 10 Polarität des Digitaltransistors: Einfach NPN Bauform - HF-Transistor: SOT-416 Kollektor-Emitter-Spannung V(br)ceo: 50 Anzahl der Pins: 3 Pins Produktpalette: DTD513Z Widerstandsverhältnis R1/R2: 0.1 SVHC: No SVHC (08-Jul-2021) | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD513ZETL | Rohm Semiconductor | Trans Digital BJT NPN 12V 500mA 3-Pin EMT T/R | auf Bestellung 28169 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD513ZETL | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 12V; 0.5A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 12V Collector current: 0.5A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 140 Mounting: SMD Kind of package: reel; tape Frequency: 260MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Anzahl je Verpackung: 10 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD513ZETL | Rohm Semiconductor | Trans Digital BJT NPN 12V 500mA 3-Pin EMT T/R | auf Bestellung 5775 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTD513ZETL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 12V 0.5A EMT3 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 10081 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD513ZETL | ROHM | Description: ROHM - DTD513ZETL - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 50 V, 500 mA, 1 kohm, 10 kohm SVHC: No SVHC (08-Jul-2021) | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD513ZMGT2L | Rohm Semiconductor | Description: DIGITAL TRANSISTOR (500MA/12V), | auf Bestellung 6643 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD513ZMGT2L | Rohm Semiconductor | Description: DIGITAL TRANSISTOR (500MA/12V), | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD513ZMGT2L | ROHM Semiconductor | Bipolar Transistors - Pre-Biased NPN Digital Transtr 500mA12V w/bias rstr | auf Bestellung 6759 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD513ZMT2L | ROHM Semiconductor | Bipolar Transistors - Pre-Biased RECOMMENDED ALT 755-DTD513ZMGT2L | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD513ZMT2L | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW VMT3 | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD523YE3TL | ROHM Semiconductor | Digital Transistors NPN, SOT-416, R1?R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor) | auf Bestellung 5580 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD523YE3TL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 12V 0.5A EMT3 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD523YE3TL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 12V 0.5A EMT3 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD523YETL | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 12V; 0.5A; 150mW; SC75A,SOT416 Mounting: SMD Kind of package: reel; tape Case: SC75A; SOT416 Power dissipation: 0.15W Kind of transistor: BRT Type of transistor: NPN Current gain: 140 Base-emitter resistor: 10kΩ Frequency: 260MHz Collector current: 0.5A Collector-emitter voltage: 12V Base resistor: 2.2kΩ Polarisation: bipolar Anzahl je Verpackung: 10 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD523YETL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW EMT3 | auf Bestellung 1963 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD523YETL | ROHM Semiconductor | Digital Transistors NPN Digital Transistor | auf Bestellung 1831 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD523YETL | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 12V; 0.5A; 150mW; SC75A,SOT416 Mounting: SMD Kind of package: reel; tape Case: SC75A; SOT416 Power dissipation: 0.15W Kind of transistor: BRT Type of transistor: NPN Current gain: 140 Base-emitter resistor: 10kΩ Frequency: 260MHz Collector current: 0.5A Collector-emitter voltage: 12V Base resistor: 2.2kΩ Polarisation: bipolar | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD523YMT2L | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW VMT3 | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD523YMT2L | ROHM Semiconductor | Digital Transistors TRANSISTOR | auf Bestellung 2333 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD523YMT2L | ROHM SEMICONDUCTOR | DTD523YMT2L NPN SMD transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD543EE3TL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 12V 0.5A EMT3 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | auf Bestellung 2954 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD543EE3TL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 12V 0.5A EMT3 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD543EE3TL | ROHM Semiconductor | Digital Transistors NPN, SOT-416, R1=R2 Potential Divider Type Digital Transistor (Bias Resistor Built-in Transistor) | auf Bestellung 6000 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD543EETL | ROHM Semiconductor | Digital Transistors TRANSISTOR | auf Bestellung 25 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD543EETL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 12V 0.5A EMT3 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | auf Bestellung 1331 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD543EETL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 12V 0.5A EMT3 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD543EMT2L | Rohm Semiconductor | Description: TRANS PREBIAS NPN 12V 0.5A VMT3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Supplier Device Package: VMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD543EMT2L | ROHM Semiconductor | Digital Transistors TRANSISTOR | auf Bestellung 7819 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD543XE3TL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 12V 0.5A EMT3 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD543XE3TL | ROHM Semiconductor | Digital Transistors NPN, SOT-416, R1?R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor) | auf Bestellung 6000 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD543XE3TL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 12V 0.5A EMT3 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTD543XETL | ROHM Semiconductor | Bipolar Transistors - Pre-Biased TRANSISTOR | auf Bestellung 1467 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD543XETL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW EMT3 | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD543XMT2L | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW VMT3 | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD543XMT2L | ROHM Semiconductor | Bipolar Transistors - Pre-Biased TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD543ZE3TL | ROHM Semiconductor | Digital Transistors NPN, SOT-416, R1?R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor) | auf Bestellung 6388 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD543ZETL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW EMT3 | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD543ZETL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW EMT3 | auf Bestellung 11 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD543ZETL | ROHM Semiconductor | Bipolar Transistors - Pre-Biased TRANSISTOR | auf Bestellung 2966 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||
| DTD543ZMT2L | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW VMT3 | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD543ZMT2L | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 12V; 0.5A; 150mW; SOT723; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 12V Collector current: 0.5A Power dissipation: 150mW Case: SOT723 Current gain: 140 Mounting: SMD Kind of package: reel; tape Frequency: 260MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD543ZMT2L | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 12V; 0.5A; 150mW; SOT723; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 12V Collector current: 0.5A Power dissipation: 150mW Case: SOT723 Current gain: 140 Mounting: SMD Kind of package: reel; tape Frequency: 260MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD543ZMT2L | ROHM Semiconductor | Digital Transistors TRANSISTOR | auf Bestellung 7628 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTD713ZETL | ROHM Semiconductor | Bipolar Transistors - Pre-Biased TRANS DIGI BJT NPN 200MA 3PIN | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD713ZETL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW EMT3 | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD713ZMT2L | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW VMT3 | auf Bestellung 7527 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD713ZMT2L | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW VMT3 | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD713ZMT2L | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW VMT3 | auf Bestellung 7527 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD713ZMT2L | ROHM Semiconductor | Bipolar Transistors - Pre-Biased TRNSISTR DIGI NPN 200MA | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD723YETL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW EMT3 | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD723YETL | ROHM Semiconductor | Bipolar Transistors - Pre-Biased TRANS DIGI BJT NPN 200MA | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD723YMT2L | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW VMT3 | auf Bestellung 3426 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD723YMT2L | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW VMT3 | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD723YMT2L | ROHM Semiconductor | Bipolar Transistors - Pre-Biased TRANS DIGI BJT NPN 200MA TR | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD723YMT2L | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW VMT3 | auf Bestellung 3426 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD743EETL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW EMT3 | auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTD743EETL | ROHM Semiconductor | Bipolar Transistors - Pre-Biased TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD743EETL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW EMT3 | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD743EMT2L | ROHM Semiconductor | Digital Transistors TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD743EMT2L | Rohm Semiconductor | Description: TRANS PREBIAS NPN 30V 0.2A VMT3 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Supplier Device Package: VMT3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD743EMT2L | Rohm Semiconductor | Description: TRANS PREBIAS NPN 30V 0.2A VMT3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Supplier Device Package: VMT3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD743XETL | ROHM Semiconductor | Bipolar Transistors - Pre-Biased DIGI 200MA/30V 3EMT | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD743XETL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW EMT3 | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD743XMT2L | ROHM Semiconductor | Bipolar Transistors - Pre-Biased DIGI 200MA/30V 3VMT | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD743XMT2L | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW VMT3 | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD743ZETL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW EMT3 | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD743ZETL | ROHM Semiconductor | Bipolar Transistors - Pre-Biased TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD743ZMT2L | ROHM Semiconductor | Bipolar Transistors - Pre-Biased TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||
| DTD743ZMT2L | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW VMT3 | Produkt ist nicht verfügbar | |||||||||||||||||
| DTDG14GP | ROHM | SOT89 | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTDG14GP | ROHM | 09+ | auf Bestellung 997 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTDG14GP Produktcode: 106265 | ROHM | Transistoren > Bipolar-Transistoren NPN | Produkt ist nicht verfügbar | |||||||||||||||||
| DTDG14GP | ROHM | 08+ | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTDG14GP/EO1P | ROHM | auf Bestellung 941 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| DTDG14GPFRAT100 | ROHM | Description: ROHM - DTDG14GPFRAT100 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 60 V, 1 A, 10 kohm tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 300 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 1 usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 60 euEccn: NLR Verlustleistung: 500 Bauform - Transistor: SOT-89 productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150 Kollektor-Emitter-Spannung, PNP, max.: - SVHC: Lead (17-Jan-2023) | auf Bestellung 205 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTDG14GPFRAT100 | ROHM | Description: ROHM - DTDG14GPFRAT100 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 60 V, 1 A, 10 kohm tariffCode: 85412100 Dauer-Kollektorstrom Ic: 1 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 300 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: - Dauer-Kollektorstrom: 1 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 60 Basis-Emitter-Widerstand R2: 10 euEccn: NLR Verlustleistung: 500 Polarität des Digitaltransistors: Einfach NPN Bauform - Transistor: SOT-89 Bauform - HF-Transistor: SOT-89 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Kollektor-Emitter-Spannung V(br)ceo: 60 Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Wandlerpolarität: Einfach NPN Widerstandsverhältnis R1/R2: - Betriebstemperatur, max.: 150 Kollektor-Emitter-Spannung, PNP, max.: - SVHC: Lead (17-Jan-2023) | auf Bestellung 205 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTDG14GPT100 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 60V; 1A; 500mW; SC62,SOT89; 10kΩ Mounting: SMD Type of transistor: NPN Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base-emitter resistor: 10kΩ Case: SC62; SOT89 Frequency: 80MHz Collector-emitter voltage: 60V Current gain: 300 Collector current: 1A | Produkt ist nicht verfügbar | |||||||||||||||||
| DTDG14GPT100 | ROHM Semiconductor | Bipolar Transistors - Pre-Biased DIGITAL NPN 60V 1A | auf Bestellung 1545 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTDG14GPT100 | ROHM | SOT-89 09+ | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTDG14GPT100 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 60V 1A MPT3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V Supplier Device Package: MPT3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W Frequency - Transition: 80 MHz Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 11000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTDG14GPT100 | ROHM SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 60V; 1A; 500mW; SC62,SOT89; 10kΩ Mounting: SMD Type of transistor: NPN Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base-emitter resistor: 10kΩ Case: SC62; SOT89 Frequency: 80MHz Collector-emitter voltage: 60V Current gain: 300 Collector current: 1A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| DTDG14GPT100 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 60V 1A MPT3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V Supplier Device Package: MPT3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W Frequency - Transition: 80 MHz Resistor - Emitter Base (R2): 10 kOhms | auf Bestellung 11922 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTDG14P | ROHM | N A | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTDG23YP | ROHM | 09+ | auf Bestellung 1018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTDG23YPT100 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 60V 1A MPT3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V Supplier Device Package: MPT3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W Frequency - Transition: 80 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 22 kOhms | auf Bestellung 868 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTDG23YPT100 | ROHM | Description: ROHM - DTDG23YPT100 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 60 V, 1 A, 2.2 kohm, 10 kohm tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 300 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 1 usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 60 euEccn: NLR Verlustleistung: 1.5 Polarität des Digitaltransistors: Einfach NPN Bauform - Transistor: SOT-89 productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150 Kollektor-Emitter-Spannung, PNP, max.: - SVHC: Lead (17-Jan-2023) | auf Bestellung 2099 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTDG23YPT100 | Rohm Semiconductor | Description: TRANS PREBIAS NPN 60V 1A MPT3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V Supplier Device Package: MPT3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W Frequency - Transition: 80 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 22 kOhms | Produkt ist nicht verfügbar | |||||||||||||||||
| DTDG23YPT100 | ROHM SEMICONDUCTOR | DTDG23YPT100 NPN SMD transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| DTDG23YPT100 | ROHM Semiconductor | Digital Transistors NPN 60V 1A | auf Bestellung 6004 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTDG23YPT100 | ROHM | Description: ROHM - DTDG23YPT100 - Bipolarer Transistor, pre-biased/digital, Einfach NPN, 60 V, 1 A, 2.2 kohm, 10 kohm tariffCode: 85412900 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 300 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 1 usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 60 euEccn: NLR Verlustleistung: 1.5 Bauform - Transistor: SOT-89 productTraceability: No Wandlerpolarität: Einfach NPN Betriebstemperatur, max.: 150 Kollektor-Emitter-Spannung, PNP, max.: - SVHC: Lead (17-Jan-2023) | auf Bestellung 2099 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| DTDS14GP | ROHM Semiconductor | ROHM Semiconductor | Produkt ist nicht verfügbar | |||||||||||||||||
| DTDS14GP HRAT100 | ROHM | SOT89 | auf Bestellung 795 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTDS14GPHRAT100 | ROHM | 98+ | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| DTDS14GPT100 | ROHM Semiconductor | ROHM Semiconductor | Produkt ist nicht verfügbar | |||||||||||||||||
| DTDUO3/16GB | Kingston Technology | Flash Card 16G-byte USB Flash Drive | Produkt ist nicht verfügbar | |||||||||||||||||
| DTDV23YPHRAT101 | ROHM | 98+ | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |