Foto | Bezeichnung | Hersteller | Beschreibung |
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NTMFS5C604NLT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6 Case: DFN5x6 Mounting: SMD Kind of package: reel; tape Drain current: 203A Drain-source voltage: 60V Type of transistor: N-MOSFET On-state resistance: 1.2mΩ Power dissipation: 100W Gate-source voltage: ±20V Kind of channel: enhancement Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1500 Stücke: Lieferzeit 7-14 Tag (e) |
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NTMFS5C628NLT1G | ONSEMI |
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auf Bestellung 1479 Stücke: Lieferzeit 7-14 Tag (e) |
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NTMFS5C670NLT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 440A Power dissipation: 1.8W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 157 Stücke: Lieferzeit 7-14 Tag (e) |
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NTP165N65S3H | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 53A Power dissipation: 142W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.165Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 88 Stücke: Lieferzeit 7-14 Tag (e) |
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NTP360N80S3Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 96W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Pulsed drain current: 32.5A Power dissipation: 96W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 25.3nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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NTP6412ANG | ONSEMI |
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auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR0202PLT1G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23 Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -20V Drain current: -400mA Gate charge: 2.18nC Power dissipation: 0.225W On-state resistance: 0.55Ω Gate-source voltage: ±20V Case: SOT23 Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR1P02LT1G | ONSEMI |
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auf Bestellung 2442 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR1P02T1G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 0.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1A Power dissipation: 0.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2300 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR2101PT1G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -8V Drain current: -3A Power dissipation: 0.96W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 52mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1971 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR3C21NZT1G | ONSEMI |
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auf Bestellung 2985 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR4003NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.56A Power dissipation: 0.69W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.15nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 905 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR4101PT1G | ONSEMI |
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auf Bestellung 211 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR4170NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.7A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 55mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR4171PT1G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3003 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR4501NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.105Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 10A Gate charge: 6nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9356 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR4502PT1G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.56A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1960 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR4503NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 730mW; SOT23 Polarisation: unipolar Case: SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Gate charge: 3.6nC On-state resistance: 0.11Ω Power dissipation: 0.73W Drain current: 2.5A Pulsed drain current: 10A Gate-source voltage: ±20V Drain-source voltage: 30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2906 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR5103NT1G | ONSEMI |
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auf Bestellung 1848 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR5105PT1G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.141A Power dissipation: 0.347W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1154 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR5198NLT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: SOT23 On-state resistance: 155mΩ Power dissipation: 0.6W Drain current: 1.6A Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 594 Stücke: Lieferzeit 7-14 Tag (e) |
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NTS4001NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323 Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.33W Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 0.2A On-state resistance: 1.5Ω Gate-source voltage: ±20V Drain-source voltage: 30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3209 Stücke: Lieferzeit 7-14 Tag (e) |
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NTS4101PT1G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.329W; SC70,SOT323 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.62A Gate charge: 6.4nC On-state resistance: 0.16Ω Power dissipation: 0.329W Gate-source voltage: ±8V Case: SC70; SOT323 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3083 Stücke: Lieferzeit 7-14 Tag (e) |
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NTS4173PT1G | ONSEMI |
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auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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NTS4409NT1G | ONSEMI |
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auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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NTZD3152PT1G | ONSEMI |
![]() Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.43A Power dissipation: 0.25W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.7nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1830 Stücke: Lieferzeit 7-14 Tag (e) |
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NTZD3154NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.54A; 0.25W; SOT563 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.54A Power dissipation: 0.25W Case: SOT563 Gate-source voltage: ±7V On-state resistance: 0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.5nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1393 Stücke: Lieferzeit 7-14 Tag (e) |
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NTZD3155CT1G | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.39/-0.31A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±6V On-state resistance: 400/500mΩ Mounting: SMD Gate charge: 1.5/1.7nC Kind of package: reel; tape Kind of channel: enhancement Kind of transistor: complementary pair Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4033 Stücke: Lieferzeit 7-14 Tag (e) |
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NTZD3155CT2G | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.39/-0.31A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±6V On-state resistance: 0.55/0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Kind of transistor: complementary pair Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3459 Stücke: Lieferzeit 7-14 Tag (e) |
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NUD4001DR2G | ONSEMI |
![]() ![]() Description: IC: driver; LED driver; SO8; 500mA; 28V; Ch: 1; PWM Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: SO8 Output current: 0.5A Output voltage: 28V Number of channels: 1 Integrated circuit features: PWM Mounting: SMD Operating temperature: -40...125°C Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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NUF2042XV6T1G | ONSEMI |
![]() Description: Filter: digital; line terminator; lowpass,EMI; SOT563; Ch: 2 Type of filter: digital Kind of integrated circuit: line terminator Kind of filter: EMI; lowpass Case: SOT563 Mounting: SMD Number of channels: 2 Application: USB port ESD protection Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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NUF2101MT1G | ONSEMI |
![]() Description: Diode: TVS array; bidirectional; TSOP6; reel,tape Type of diode: TVS array Case: TSOP6 Mounting: SMD Semiconductor structure: bidirectional Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2180 Stücke: Lieferzeit 7-14 Tag (e) |
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NUP1301ML3T1G | ONSEMI |
![]() Description: Diode: TVS array; double series; SOT23; reel,tape; ESD Type of diode: TVS array Semiconductor structure: double series Mounting: SMD Case: SOT23 Max. off-state voltage: 70V Kind of package: reel; tape Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2855 Stücke: Lieferzeit 7-14 Tag (e) |
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NUP2105LT1G | ONSEMI |
![]() Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 26.2...32V Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Kind of package: reel; tape Application: CAN Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 20072 Stücke: Lieferzeit 7-14 Tag (e) |
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NUP2114UPXV5T1G | ONSEMI |
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auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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NUP2201MR6T1G | ONSEMI |
![]() Description: Diode: TVS array; 6V; 25A; 500W; unidirectional; TSOP6; Ch: 2; ESD Type of diode: TVS array Breakdown voltage: 6V Max. forward impulse current: 25A Peak pulse power dissipation: 0.5kW Semiconductor structure: unidirectional Mounting: SMD Case: TSOP6 Leakage current: 5µA Number of channels: 2 Kind of package: reel; tape Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5379 Stücke: Lieferzeit 7-14 Tag (e) |
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NUP2301MW6T1G | ONSEMI |
![]() Description: Diode: diode arrays; SC88; Ch: 2; reel,tape; ESD Case: SC88 Number of channels: 2 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 70V Type of diode: diode arrays Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2668 Stücke: Lieferzeit 7-14 Tag (e) |
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NUP4114UCLW1T2G | ONSEMI |
![]() Description: Diode: TVS array; 6.5V; 12A; SC88; Ch: 4; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 6.5V Mounting: SMD Case: SC88 Max. off-state voltage: 5.5V Number of channels: 4 Kind of package: reel; tape Leakage current: 1µA Version: ESD Max. forward impulse current: 12A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2748 Stücke: Lieferzeit 7-14 Tag (e) |
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NUP4114UCW1T2G | ONSEMI |
![]() Description: Diode: TVS array; 6.5V; 12A; SC88; Ch: 4; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 6.5V Mounting: SMD Case: SC88 Max. off-state voltage: 5.5V Number of channels: 4 Kind of package: reel; tape Leakage current: 1µA Version: ESD Max. forward impulse current: 12A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3025 Stücke: Lieferzeit 7-14 Tag (e) |
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NUP4301MR6T1G | ONSEMI |
![]() Description: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD Type of diode: diode arrays Mounting: SMD Case: SC74 Max. off-state voltage: 70V Kind of package: reel; tape Version: ESD Number of channels: 4 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2750 Stücke: Lieferzeit 7-14 Tag (e) |
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NVD5C688NLT4G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 77A; 9W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 77A Power dissipation: 9W Case: DPAK Gate-source voltage: ±16V On-state resistance: 27.4mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1718 Stücke: Lieferzeit 7-14 Tag (e) |
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NVF2955T1G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223 Kind of package: reel; tape Case: SOT223 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Drain-source voltage: -60V Drain current: -2.6A Gate charge: 14.3nC On-state resistance: 154mΩ Power dissipation: 2.3W Gate-source voltage: ±20V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 740 Stücke: Lieferzeit 7-14 Tag (e) |
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NVJD5121NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.212A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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NVR4501NT1G | ONSEMI |
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auf Bestellung 2352 Stücke: Lieferzeit 7-14 Tag (e) |
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NVR5124PLT1G | ONSEMI |
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auf Bestellung 2475 Stücke: Lieferzeit 7-14 Tag (e) |
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NVR5198NLT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: SOT23 Gate charge: 5.1nC On-state resistance: 0.205Ω Power dissipation: 0.4W Drain current: 1.2A Gate-source voltage: ±20V Pulsed drain current: 27A Drain-source voltage: 60V Polarisation: unipolar Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1683 Stücke: Lieferzeit 7-14 Tag (e) |
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NVTFS5116PLTAG | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -10A; 1.6W; WDFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -10A Power dissipation: 1.6W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1184 Stücke: Lieferzeit 7-14 Tag (e) |
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NVTJD4001NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Polarisation: unipolar Drain current: 0.18A Power dissipation: 0.272W On-state resistance: 1.5Ω Gate-source voltage: ±20V Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2910 Stücke: Lieferzeit 7-14 Tag (e) |
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NVTR4503NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23 Polarisation: unipolar Case: SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Gate charge: 7nC On-state resistance: 0.14Ω Power dissipation: 0.73W Drain current: 1.5A Gate-source voltage: ±20V Drain-source voltage: 30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 147 Stücke: Lieferzeit 7-14 Tag (e) |
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NZT560A | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 3A; 1W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 1W Case: SOT223-4; TO261-4 Current gain: 250...550 Mounting: SMD Kind of package: reel; tape Frequency: 75MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3395 Stücke: Lieferzeit 7-14 Tag (e) |
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NZT605 | ONSEMI |
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auf Bestellung 793 Stücke: Lieferzeit 7-14 Tag (e) |
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NZT7053 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223 Kind of transistor: Darlington Case: SOT223 Type of transistor: NPN Mounting: SMD Kind of package: reel; tape Power dissipation: 1W Collector current: 1.5A Collector-emitter voltage: 100V Frequency: 200MHz Polarisation: bipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3982 Stücke: Lieferzeit 7-14 Tag (e) |
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PACDN042Y3R | ONSEMI |
![]() Description: Diode: TVS array; SOT23; Ch: 2; reel,tape; ESD Type of diode: TVS array Mounting: SMD Case: SOT23 Max. off-state voltage: 5.5V Kind of package: reel; tape Version: ESD Number of channels: 2 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2172 Stücke: Lieferzeit 7-14 Tag (e) |
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PCA9306DTR2G | ONSEMI |
![]() Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; logic level voltage translator Number of channels: 2 Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Case: TSSOP8 Kind of output: open drain Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Supply voltage: 1...3.6V DC Number of outputs: 2 Number of inputs: 2 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1859 Stücke: Lieferzeit 7-14 Tag (e) |
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PCA9306USG | ONSEMI |
![]() Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; logic level voltage translator Number of channels: 2 Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Case: US8 Kind of output: open drain Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Supply voltage: 1...3.6V DC Number of outputs: 2 Number of inputs: 2 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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PN2222ABU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Type of transistor: NPN Mounting: THT Case: TO92 Collector current: 0.6A Power dissipation: 0.625W Current gain: 100...300 Collector-emitter voltage: 40V Kind of package: bulk Frequency: 300MHz Polarisation: bipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5649 Stücke: Lieferzeit 7-14 Tag (e) |
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PN2222ATA | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Mounting: THT Case: TO92 Formed Collector current: 0.6A Power dissipation: 0.625W Current gain: 100...300 Collector-emitter voltage: 40V Kind of package: Ammo Pack Frequency: 300MHz Polarisation: bipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1635 Stücke: Lieferzeit 7-14 Tag (e) |
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PN2222ATF | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Mounting: THT Case: TO92 Formed Collector current: 0.6A Power dissipation: 0.625W Current gain: 100...300 Collector-emitter voltage: 40V Kind of package: reel; tape Frequency: 300MHz Polarisation: bipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 559 Stücke: Lieferzeit 7-14 Tag (e) |
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PN2907ATFR | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed Polarisation: bipolar Type of transistor: PNP Case: TO92 Formed Mounting: THT Power dissipation: 0.625W Collector current: 0.8A Current gain: 100...300 Collector-emitter voltage: 60V Kind of package: reel; tape Frequency: 200MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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PZT2222AT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1052 Stücke: Lieferzeit 7-14 Tag (e) |
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NTMFS5C604NLT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Drain current: 203A
Drain-source voltage: 60V
Type of transistor: N-MOSFET
On-state resistance: 1.2mΩ
Power dissipation: 100W
Gate-source voltage: ±20V
Kind of channel: enhancement
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Drain current: 203A
Drain-source voltage: 60V
Type of transistor: N-MOSFET
On-state resistance: 1.2mΩ
Power dissipation: 100W
Gate-source voltage: ±20V
Kind of channel: enhancement
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1500 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.29 EUR |
38+ | 1.9 EUR |
46+ | 1.57 EUR |
49+ | 1.49 EUR |
1500+ | 1.47 EUR |
NTMFS5C628NLT1G |
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Hersteller: ONSEMI
NTMFS5C628NLT1G SMD N channel transistors
NTMFS5C628NLT1G SMD N channel transistors
auf Bestellung 1479 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.12 EUR |
99+ | 0.73 EUR |
104+ | 0.69 EUR |
NTMFS5C670NLT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 440A
Power dissipation: 1.8W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 440A
Power dissipation: 1.8W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 157 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.17 EUR |
36+ | 2.02 EUR |
47+ | 1.54 EUR |
50+ | 1.46 EUR |
500+ | 1.44 EUR |
NTP165N65S3H |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 53A
Power dissipation: 142W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 53A
Power dissipation: 142W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.02 EUR |
19+ | 3.88 EUR |
20+ | 3.72 EUR |
21+ | 3.52 EUR |
NTP360N80S3Z |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 96W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25.3nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 96W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25.3nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.36 EUR |
27+ | 2.75 EUR |
28+ | 2.59 EUR |
250+ | 2.5 EUR |
NTP6412ANG |
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Hersteller: ONSEMI
NTP6412ANG THT N channel transistors
NTP6412ANG THT N channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 3.03 EUR |
45+ | 1.6 EUR |
48+ | 1.5 EUR |
NTR0202PLT1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -400mA
Gate charge: 2.18nC
Power dissipation: 0.225W
On-state resistance: 0.55Ω
Gate-source voltage: ±20V
Case: SOT23
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -400mA
Gate charge: 2.18nC
Power dissipation: 0.225W
On-state resistance: 0.55Ω
Gate-source voltage: ±20V
Case: SOT23
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
531+ | 0.13 EUR |
667+ | 0.11 EUR |
823+ | 0.087 EUR |
910+ | 0.079 EUR |
1701+ | 0.042 EUR |
1799+ | 0.04 EUR |
NTR1P02LT1G |
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Hersteller: ONSEMI
NTR1P02LT1G SMD P channel transistors
NTR1P02LT1G SMD P channel transistors
auf Bestellung 2442 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
770+ | 0.093 EUR |
820+ | 0.087 EUR |
NTR1P02T1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 0.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 0.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2300 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
250+ | 0.29 EUR |
368+ | 0.19 EUR |
459+ | 0.16 EUR |
500+ | 0.14 EUR |
770+ | 0.093 EUR |
820+ | 0.087 EUR |
3000+ | 0.084 EUR |
NTR2101PT1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1971 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
236+ | 0.3 EUR |
336+ | 0.21 EUR |
385+ | 0.19 EUR |
582+ | 0.12 EUR |
NTR3C21NZT1G |
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Hersteller: ONSEMI
NTR3C21NZT1G SMD N channel transistors
NTR3C21NZT1G SMD N channel transistors
auf Bestellung 2985 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
144+ | 0.5 EUR |
455+ | 0.16 EUR |
481+ | 0.15 EUR |
NTR4003NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.56A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.15nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.56A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.15nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 905 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
837+ | 0.086 EUR |
905+ | 0.079 EUR |
1173+ | 0.061 EUR |
NTR4101PT1G |
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Hersteller: ONSEMI
NTR4101PT1G SMD P channel transistors
NTR4101PT1G SMD P channel transistors
auf Bestellung 211 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
211+ | 0.34 EUR |
245+ | 0.29 EUR |
673+ | 0.11 EUR |
9000+ | 0.08 EUR |
NTR4170NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
209+ | 0.34 EUR |
247+ | 0.29 EUR |
358+ | 0.2 EUR |
407+ | 0.18 EUR |
428+ | 0.17 EUR |
451+ | 0.16 EUR |
NTR4171PT1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3003 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
112+ | 0.64 EUR |
152+ | 0.47 EUR |
176+ | 0.41 EUR |
197+ | 0.36 EUR |
304+ | 0.24 EUR |
321+ | 0.22 EUR |
1000+ | 0.21 EUR |
NTR4501NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 10A
Gate charge: 6nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 10A
Gate charge: 6nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9356 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
414+ | 0.17 EUR |
555+ | 0.13 EUR |
627+ | 0.11 EUR |
971+ | 0.074 EUR |
1027+ | 0.07 EUR |
3000+ | 0.068 EUR |
NTR4502PT1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.56A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.56A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1960 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
368+ | 0.19 EUR |
463+ | 0.15 EUR |
506+ | 0.14 EUR |
1021+ | 0.07 EUR |
1064+ | 0.067 EUR |
NTR4503NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 730mW; SOT23
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Gate charge: 3.6nC
On-state resistance: 0.11Ω
Power dissipation: 0.73W
Drain current: 2.5A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 730mW; SOT23
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Gate charge: 3.6nC
On-state resistance: 0.11Ω
Power dissipation: 0.73W
Drain current: 2.5A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2906 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
417+ | 0.17 EUR |
506+ | 0.14 EUR |
556+ | 0.13 EUR |
770+ | 0.093 EUR |
820+ | 0.087 EUR |
NTR5103NT1G |
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Hersteller: ONSEMI
NTR5103NT1G SMD N channel transistors
NTR5103NT1G SMD N channel transistors
auf Bestellung 1848 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
373+ | 0.19 EUR |
1731+ | 0.041 EUR |
1832+ | 0.039 EUR |
9000+ | 0.038 EUR |
NTR5105PT1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.141A
Power dissipation: 0.347W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.141A
Power dissipation: 0.347W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1154 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
506+ | 0.14 EUR |
723+ | 0.099 EUR |
839+ | 0.085 EUR |
870+ | 0.082 EUR |
935+ | 0.077 EUR |
NTR5198NLT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
On-state resistance: 155mΩ
Power dissipation: 0.6W
Drain current: 1.6A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
On-state resistance: 155mΩ
Power dissipation: 0.6W
Drain current: 1.6A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 594 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
295+ | 0.24 EUR |
369+ | 0.19 EUR |
505+ | 0.14 EUR |
594+ | 0.12 EUR |
6000+ | 0.079 EUR |
NTS4001NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.33W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.2A
On-state resistance: 1.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.33W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.2A
On-state resistance: 1.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3209 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
472+ | 0.15 EUR |
550+ | 0.13 EUR |
815+ | 0.088 EUR |
935+ | 0.077 EUR |
1067+ | 0.067 EUR |
1454+ | 0.049 EUR |
NTS4101PT1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.329W; SC70,SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.62A
Gate charge: 6.4nC
On-state resistance: 0.16Ω
Power dissipation: 0.329W
Gate-source voltage: ±8V
Case: SC70; SOT323
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.329W; SC70,SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.62A
Gate charge: 6.4nC
On-state resistance: 0.16Ω
Power dissipation: 0.329W
Gate-source voltage: ±8V
Case: SC70; SOT323
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3083 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
237+ | 0.3 EUR |
371+ | 0.19 EUR |
447+ | 0.16 EUR |
705+ | 0.1 EUR |
747+ | 0.096 EUR |
1500+ | 0.094 EUR |
NTS4173PT1G |
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Hersteller: ONSEMI
NTS4173PT1G SMD P channel transistors
NTS4173PT1G SMD P channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
221+ | 0.32 EUR |
770+ | 0.093 EUR |
820+ | 0.087 EUR |
NTS4409NT1G |
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Hersteller: ONSEMI
NTS4409NT1G SMD N channel transistors
NTS4409NT1G SMD N channel transistors
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 11.91 EUR |
161+ | 0.44 EUR |
441+ | 0.16 EUR |
3000+ | 0.1 EUR |
NTZD3152PT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.43A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.43A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1830 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
269+ | 0.27 EUR |
338+ | 0.21 EUR |
477+ | 0.15 EUR |
500+ | 0.14 EUR |
NTZD3154NT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.54A; 0.25W; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.54A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±7V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.54A; 0.25W; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.54A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±7V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1393 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
177+ | 0.41 EUR |
211+ | 0.34 EUR |
348+ | 0.21 EUR |
421+ | 0.17 EUR |
544+ | 0.13 EUR |
575+ | 0.12 EUR |
NTZD3155CT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 400/500mΩ
Mounting: SMD
Gate charge: 1.5/1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 400/500mΩ
Mounting: SMD
Gate charge: 1.5/1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4033 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
214+ | 0.33 EUR |
329+ | 0.22 EUR |
397+ | 0.18 EUR |
506+ | 0.14 EUR |
538+ | 0.13 EUR |
NTZD3155CT2G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3459 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
250+ | 0.29 EUR |
325+ | 0.22 EUR |
472+ | 0.15 EUR |
550+ | 0.13 EUR |
582+ | 0.12 EUR |
NUD4001DR2G | ![]() |
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Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; SO8; 500mA; 28V; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO8
Output current: 0.5A
Output voltage: 28V
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating temperature: -40...125°C
Anzahl je Verpackung: 1 Stücke
Category: LED drivers
Description: IC: driver; LED driver; SO8; 500mA; 28V; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO8
Output current: 0.5A
Output voltage: 28V
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating temperature: -40...125°C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.83 EUR |
73+ | 0.99 EUR |
104+ | 0.69 EUR |
110+ | 0.65 EUR |
250+ | 0.63 EUR |
NUF2042XV6T1G |
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Hersteller: ONSEMI
Category: Filters - integrated circuits
Description: Filter: digital; line terminator; lowpass,EMI; SOT563; Ch: 2
Type of filter: digital
Kind of integrated circuit: line terminator
Kind of filter: EMI; lowpass
Case: SOT563
Mounting: SMD
Number of channels: 2
Application: USB port ESD protection
Anzahl je Verpackung: 1 Stücke
Category: Filters - integrated circuits
Description: Filter: digital; line terminator; lowpass,EMI; SOT563; Ch: 2
Type of filter: digital
Kind of integrated circuit: line terminator
Kind of filter: EMI; lowpass
Case: SOT563
Mounting: SMD
Number of channels: 2
Application: USB port ESD protection
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.76 EUR |
48+ | 1.49 EUR |
132+ | 0.54 EUR |
250+ | 0.32 EUR |
NUF2101MT1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; TSOP6; reel,tape
Type of diode: TVS array
Case: TSOP6
Mounting: SMD
Semiconductor structure: bidirectional
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; TSOP6; reel,tape
Type of diode: TVS array
Case: TSOP6
Mounting: SMD
Semiconductor structure: bidirectional
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2180 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
155+ | 0.46 EUR |
171+ | 0.42 EUR |
200+ | 0.36 EUR |
212+ | 0.34 EUR |
250+ | 0.33 EUR |
500+ | 0.32 EUR |
NUP1301ML3T1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; double series; SOT23; reel,tape; ESD
Type of diode: TVS array
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Kind of package: reel; tape
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: TVS array; double series; SOT23; reel,tape; ESD
Type of diode: TVS array
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Kind of package: reel; tape
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2855 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
313+ | 0.23 EUR |
443+ | 0.16 EUR |
725+ | 0.099 EUR |
NUP2105LT1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Kind of package: reel; tape
Application: CAN
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Kind of package: reel; tape
Application: CAN
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20072 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
421+ | 0.17 EUR |
506+ | 0.14 EUR |
547+ | 0.13 EUR |
1129+ | 0.063 EUR |
1194+ | 0.06 EUR |
NUP2114UPXV5T1G |
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Hersteller: ONSEMI
NUP2114UPXV5T1G Protection diodes - arrays
NUP2114UPXV5T1G Protection diodes - arrays
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
428+ | 0.17 EUR |
451+ | 0.16 EUR |
NUP2201MR6T1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 25A; 500W; unidirectional; TSOP6; Ch: 2; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 25A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Leakage current: 5µA
Number of channels: 2
Kind of package: reel; tape
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 25A; 500W; unidirectional; TSOP6; Ch: 2; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 25A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Leakage current: 5µA
Number of channels: 2
Kind of package: reel; tape
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5379 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
95+ | 0.76 EUR |
133+ | 0.54 EUR |
159+ | 0.45 EUR |
172+ | 0.42 EUR |
228+ | 0.31 EUR |
241+ | 0.3 EUR |
500+ | 0.29 EUR |
NUP2301MW6T1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: diode arrays; SC88; Ch: 2; reel,tape; ESD
Case: SC88
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 70V
Type of diode: diode arrays
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: diode arrays; SC88; Ch: 2; reel,tape; ESD
Case: SC88
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 70V
Type of diode: diode arrays
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2668 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
239+ | 0.3 EUR |
281+ | 0.25 EUR |
302+ | 0.24 EUR |
NUP4114UCLW1T2G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6.5V
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Leakage current: 1µA
Version: ESD
Max. forward impulse current: 12A
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6.5V
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Leakage current: 1µA
Version: ESD
Max. forward impulse current: 12A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2748 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
204+ | 0.35 EUR |
228+ | 0.31 EUR |
302+ | 0.24 EUR |
343+ | 0.21 EUR |
486+ | 0.15 EUR |
516+ | 0.14 EUR |
NUP4114UCW1T2G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6.5V
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Leakage current: 1µA
Version: ESD
Max. forward impulse current: 12A
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6.5V
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Leakage current: 1µA
Version: ESD
Max. forward impulse current: 12A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3025 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
232+ | 0.31 EUR |
311+ | 0.23 EUR |
350+ | 0.2 EUR |
472+ | 0.15 EUR |
500+ | 0.14 EUR |
NUP4301MR6T1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD
Type of diode: diode arrays
Mounting: SMD
Case: SC74
Max. off-state voltage: 70V
Kind of package: reel; tape
Version: ESD
Number of channels: 4
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD
Type of diode: diode arrays
Mounting: SMD
Case: SC74
Max. off-state voltage: 70V
Kind of package: reel; tape
Version: ESD
Number of channels: 4
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2750 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
246+ | 0.29 EUR |
288+ | 0.25 EUR |
376+ | 0.19 EUR |
575+ | 0.12 EUR |
642+ | 0.11 EUR |
NVD5C688NLT4G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 77A; 9W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 77A
Power dissipation: 9W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 27.4mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 77A; 9W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 77A
Power dissipation: 9W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 27.4mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1718 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.46 EUR |
54+ | 1.33 EUR |
58+ | 1.24 EUR |
61+ | 1.19 EUR |
NVF2955T1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Kind of package: reel; tape
Case: SOT223
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Drain-source voltage: -60V
Drain current: -2.6A
Gate charge: 14.3nC
On-state resistance: 154mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Kind of package: reel; tape
Case: SOT223
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Drain-source voltage: -60V
Drain current: -2.6A
Gate charge: 14.3nC
On-state resistance: 154mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 740 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
58+ | 1.24 EUR |
77+ | 0.93 EUR |
82+ | 0.87 EUR |
NVJD5121NT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.212A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.212A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.43 EUR |
100+ | 0.72 EUR |
NVR4501NT1G |
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Hersteller: ONSEMI
NVR4501NT1G SMD N channel transistors
NVR4501NT1G SMD N channel transistors
auf Bestellung 2352 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
79+ | 0.91 EUR |
304+ | 0.24 EUR |
321+ | 0.22 EUR |
6000+ | 0.21 EUR |
NVR5124PLT1G |
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Hersteller: ONSEMI
NVR5124PLT1G SMD P channel transistors
NVR5124PLT1G SMD P channel transistors
auf Bestellung 2475 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
119+ | 0.6 EUR |
302+ | 0.24 EUR |
319+ | 0.22 EUR |
NVR5198NLT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Gate charge: 5.1nC
On-state resistance: 0.205Ω
Power dissipation: 0.4W
Drain current: 1.2A
Gate-source voltage: ±20V
Pulsed drain current: 27A
Drain-source voltage: 60V
Polarisation: unipolar
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Gate charge: 5.1nC
On-state resistance: 0.205Ω
Power dissipation: 0.4W
Drain current: 1.2A
Gate-source voltage: ±20V
Pulsed drain current: 27A
Drain-source voltage: 60V
Polarisation: unipolar
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1683 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
180+ | 0.4 EUR |
240+ | 0.3 EUR |
365+ | 0.2 EUR |
382+ | 0.19 EUR |
3000+ | 0.18 EUR |
NVTFS5116PLTAG |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; 1.6W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -10A
Power dissipation: 1.6W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; 1.6W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -10A
Power dissipation: 1.6W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1184 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.19 EUR |
80+ | 0.9 EUR |
107+ | 0.67 EUR |
114+ | 0.63 EUR |
200+ | 0.61 EUR |
NVTJD4001NT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.18A
Power dissipation: 0.272W
On-state resistance: 1.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.18A
Power dissipation: 0.272W
On-state resistance: 1.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2910 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
191+ | 0.38 EUR |
222+ | 0.32 EUR |
283+ | 0.25 EUR |
397+ | 0.18 EUR |
491+ | 0.15 EUR |
532+ | 0.13 EUR |
NVTR4503NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Gate charge: 7nC
On-state resistance: 0.14Ω
Power dissipation: 0.73W
Drain current: 1.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Gate charge: 7nC
On-state resistance: 0.14Ω
Power dissipation: 0.73W
Drain current: 1.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 147 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
147+ | 0.49 EUR |
156+ | 0.46 EUR |
428+ | 0.17 EUR |
NZT560A |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 1W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 1W
Case: SOT223-4; TO261-4
Current gain: 250...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 1W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 1W
Case: SOT223-4; TO261-4
Current gain: 250...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3395 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
93+ | 0.77 EUR |
110+ | 0.65 EUR |
211+ | 0.34 EUR |
223+ | 0.32 EUR |
1000+ | 0.31 EUR |
NZT605 |
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Hersteller: ONSEMI
NZT605 NPN SMD Darlington transistors
NZT605 NPN SMD Darlington transistors
auf Bestellung 793 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
80+ | 0.9 EUR |
253+ | 0.28 EUR |
268+ | 0.27 EUR |
2000+ | 0.26 EUR |
NZT7053 |
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Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223
Kind of transistor: Darlington
Case: SOT223
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Collector current: 1.5A
Collector-emitter voltage: 100V
Frequency: 200MHz
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223
Kind of transistor: Darlington
Case: SOT223
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Collector current: 1.5A
Collector-emitter voltage: 100V
Frequency: 200MHz
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3982 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
122+ | 0.59 EUR |
278+ | 0.26 EUR |
295+ | 0.24 EUR |
2000+ | 0.23 EUR |
PACDN042Y3R |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; SOT23; Ch: 2; reel,tape; ESD
Type of diode: TVS array
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5.5V
Kind of package: reel; tape
Version: ESD
Number of channels: 2
Anzahl je Verpackung: 1 Stücke
Category: Protection diodes - arrays
Description: Diode: TVS array; SOT23; Ch: 2; reel,tape; ESD
Type of diode: TVS array
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5.5V
Kind of package: reel; tape
Version: ESD
Number of channels: 2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2172 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
332+ | 0.22 EUR |
379+ | 0.19 EUR |
463+ | 0.15 EUR |
695+ | 0.1 EUR |
736+ | 0.097 EUR |
9000+ | 0.094 EUR |
PCA9306DTR2G |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Case: TSSOP8
Kind of output: open drain
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 1...3.6V DC
Number of outputs: 2
Number of inputs: 2
Anzahl je Verpackung: 1 Stücke
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Case: TSSOP8
Kind of output: open drain
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 1...3.6V DC
Number of outputs: 2
Number of inputs: 2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1859 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
81+ | 0.89 EUR |
93+ | 0.77 EUR |
99+ | 0.73 EUR |
500+ | 0.72 EUR |
1000+ | 0.7 EUR |
PCA9306USG |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Case: US8
Kind of output: open drain
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 1...3.6V DC
Number of outputs: 2
Number of inputs: 2
Anzahl je Verpackung: 1 Stücke
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Case: US8
Kind of output: open drain
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 1...3.6V DC
Number of outputs: 2
Number of inputs: 2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.3 EUR |
23+ | 3.1 EUR |
63+ | 1.13 EUR |
3000+ | 0.67 EUR |
PN2222ABU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Mounting: THT
Case: TO92
Collector current: 0.6A
Power dissipation: 0.625W
Current gain: 100...300
Collector-emitter voltage: 40V
Kind of package: bulk
Frequency: 300MHz
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Mounting: THT
Case: TO92
Collector current: 0.6A
Power dissipation: 0.625W
Current gain: 100...300
Collector-emitter voltage: 40V
Kind of package: bulk
Frequency: 300MHz
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5649 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
261+ | 0.27 EUR |
307+ | 0.23 EUR |
612+ | 0.12 EUR |
921+ | 0.078 EUR |
975+ | 0.073 EUR |
1000+ | 0.072 EUR |
PN2222ATA |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Mounting: THT
Case: TO92 Formed
Collector current: 0.6A
Power dissipation: 0.625W
Current gain: 100...300
Collector-emitter voltage: 40V
Kind of package: Ammo Pack
Frequency: 300MHz
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Mounting: THT
Case: TO92 Formed
Collector current: 0.6A
Power dissipation: 0.625W
Current gain: 100...300
Collector-emitter voltage: 40V
Kind of package: Ammo Pack
Frequency: 300MHz
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1635 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
562+ | 0.13 EUR |
691+ | 0.1 EUR |
754+ | 0.095 EUR |
1011+ | 0.071 EUR |
1069+ | 0.067 EUR |
4000+ | 0.064 EUR |
PN2222ATF |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Mounting: THT
Case: TO92 Formed
Collector current: 0.6A
Power dissipation: 0.625W
Current gain: 100...300
Collector-emitter voltage: 40V
Kind of package: reel; tape
Frequency: 300MHz
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Mounting: THT
Case: TO92 Formed
Collector current: 0.6A
Power dissipation: 0.625W
Current gain: 100...300
Collector-emitter voltage: 40V
Kind of package: reel; tape
Frequency: 300MHz
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 559 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
280+ | 0.26 EUR |
498+ | 0.14 EUR |
559+ | 0.13 EUR |
638+ | 0.11 EUR |
4000+ | 0.066 EUR |
PN2907ATFR |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Polarisation: bipolar
Type of transistor: PNP
Case: TO92 Formed
Mounting: THT
Power dissipation: 0.625W
Collector current: 0.8A
Current gain: 100...300
Collector-emitter voltage: 60V
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Polarisation: bipolar
Type of transistor: PNP
Case: TO92 Formed
Mounting: THT
Power dissipation: 0.625W
Collector current: 0.8A
Current gain: 100...300
Collector-emitter voltage: 60V
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
736+ | 0.097 EUR |
837+ | 0.086 EUR |
1114+ | 0.064 EUR |
1180+ | 0.061 EUR |
PZT2222AT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1052 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
109+ | 0.66 EUR |
169+ | 0.42 EUR |
230+ | 0.31 EUR |
365+ | 0.2 EUR |
388+ | 0.18 EUR |