| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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VS-3C20CP07L-M3 | VISHAY |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.46V Max. forward impulse current: 60A Kind of package: tube |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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VS-3C06ET07T-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.5V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.5V Max. forward impulse current: 42A Kind of package: tube |
auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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VS-3C08ET07T-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.5V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.5V Max. forward impulse current: 54A Kind of package: tube Technology: SiC |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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VS-3C10ET07T-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.46V Max. forward impulse current: 60A Kind of package: tube |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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VS-3C16CP07L-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Mounting: THT Max. forward voltage: 1.5V Technology: SiC Max. off-state voltage: 650V Load current: 8A x2 Kind of package: tube Semiconductor structure: common cathode; double Case: TO247-3 Type of diode: Schottky rectifying Max. forward impulse current: 54A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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VS-3C40CP07L-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.5V Max. forward impulse current: 110A Kind of package: tube |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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VS-3C12ET07S2L-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.5V Max. forward impulse current: 83A Kind of package: reel; tape |
auf Bestellung 795 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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VS-C06ET07T-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 39A Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MXP120A250FL-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W Technology: MaxSiC™; SiC Mounting: THT Case: TO247-4 Kind of package: tube Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Drain current: 6.7A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 0.5Ω Pulsed drain current: 21A Power dissipation: 22W Gate charge: 20.3nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MXP120A045FE-T1GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 85W Technology: MaxSiC™; SiC Mounting: SMD Case: TO263-7 Kind of package: reel; tape Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Drain current: 31A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 99mΩ Pulsed drain current: 98A Power dissipation: 85W Gate charge: 75.6nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MXP120A045FL-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W Technology: MaxSiC™; SiC Mounting: THT Case: TO247-4 Kind of package: tube Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Drain current: 31A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 99mΩ Pulsed drain current: 98A Power dissipation: 91W Gate charge: 75.6nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MXP120A045FW-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W Technology: MaxSiC™; SiC Mounting: THT Case: TO247-3 Kind of package: tube Polarisation: unipolar Drain current: 31A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 99mΩ Pulsed drain current: 98A Power dissipation: 91W Gate charge: 75.6nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MXP120A080FE-T1GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19A; Idm: 60A; 56W Technology: MaxSiC™; SiC Mounting: SMD Case: TO263-7 Kind of package: reel; tape Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Drain current: 19A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 0.175Ω Pulsed drain current: 60A Power dissipation: 56W Gate charge: 47.3nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MXP120A080FL-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W Technology: MaxSiC™; SiC Mounting: THT Case: TO247-4 Kind of package: tube Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Drain current: 18A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 0.175Ω Pulsed drain current: 58A Power dissipation: 56W Gate charge: 47.3nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MXP120A080FW-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W Technology: MaxSiC™; SiC Mounting: THT Case: TO247-3 Kind of package: tube Polarisation: unipolar Drain current: 18A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 0.175Ω Pulsed drain current: 58A Power dissipation: 56W Gate charge: 47.3nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MXP120A250FW-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W Technology: MaxSiC™; SiC Mounting: THT Case: TO247-3 Kind of package: tube Polarisation: unipolar Drain current: 6.7A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 0.5Ω Pulsed drain current: 21A Power dissipation: 22W Gate charge: 20.3nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| VS-3C10CP12L-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 30uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.5V Kind of package: tube Leakage current: 30µA Power dissipation: 83W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| VS-3C10EP12L-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ir: 60uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.5V Kind of package: tube Leakage current: 60µA Power dissipation: 115W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| VS-3C10ET12T-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; Ir: 60uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.5V Kind of package: tube Leakage current: 60µA Power dissipation: 94W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| VS-3C15EP12L-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; Ir: 75uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.5V Kind of package: tube Leakage current: 75µA Power dissipation: 150W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| VS-3C20EP12L-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 110uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.5V Kind of package: tube Leakage current: 110µA Power dissipation: 188W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| VS-3C20ET07T-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.5V Max. forward impulse current: 110A Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| VS-3C40CP12L-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.35V Max. forward impulse current: 148A Kind of package: tube Leakage current: 12µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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VS-C08ET07T-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 57A Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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VS-C10ET07T-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 68A Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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VS-C12ET07T-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.65V Max. forward impulse current: 80A Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| VS-C16CP07L-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.7V Max. forward impulse current: 53A Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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VS-C16ET07T-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.65V Max. forward impulse current: 120A Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| VS-C20CP07L-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.75V Max. forward impulse current: 64A Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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VS-3C04ET07S2L-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.5V Max. forward impulse current: 29A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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VS-3C05ET12S2L-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 1.2kV; 5A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.5V Max. forward impulse current: 42A Kind of package: reel; tape Leakage current: 30µA Power dissipation: 60W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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VS-3C06ET07S2L-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 6A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.5V Max. forward impulse current: 42A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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VS-3C08ET07S2L-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.5V Max. forward impulse current: 54A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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VS-3C10ET07S2L-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.46V Max. forward impulse current: 60A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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VS-3C10ET12S2L-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 1.2kV; 10A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.5V Max. forward impulse current: 84A Kind of package: reel; tape Power dissipation: 94W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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VS-3C15ET12S2L-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 1.2kV; 15A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.5V Max. forward impulse current: 110A Kind of package: reel; tape Power dissipation: 111W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CRCW0805127KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 127kΩ; SMD; 0805; 0.125W; ±1%; 150V; -55÷155°C Type of resistor: thick film Resistance: 127kΩ Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C |
auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SIHA6N65E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IL213AT | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; Uce: 30V; SOIC8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4kV CTR@If: 100-130%@10mA Collector-emitter voltage: 30V Case: SOIC8 Conform to the norm: UL Turn-on time: 3µs Turn-off time: 3µs Max. off-state voltage: 6V Manufacturer series: IL21XAT |
auf Bestellung 255 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SMCJ170CA-E3/57T | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; bidirectional; DO214AB,SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 170V Breakdown voltage: 189...209V Max. forward impulse current: 5.5A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Technology: TransZorb® Kind of package: 7 inch reel; tape Manufacturer series: SMCJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1700 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SMCJ170CA-E3/9AT | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; bidirectional; DO214AB,SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 170V Breakdown voltage: 189...209V Max. forward impulse current: 5.5A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SIHLL014TR-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; Idm: 22A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.7A Pulsed drain current: 22A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CRCW251251R0FKEG | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 51Ω; SMD; 2512; 1W; ±1%; 500V; 6.3x3.15x0.6mm Type of resistor: thick film Resistance: 51Ω Mounting: SMD Case - inch: 2512 Case - mm: 6332 Power: 1W Tolerance: ±1% Operating voltage: 500V Operating temperature: -55...155°C Body dimensions: 6.3x3.15x0.6mm Temperature coefficient: 100ppm/°C Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Quantity in set/package: 4000pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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WSLF25122L000FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; 2mΩ; current shunt,sensing; SMD; 2512; 6W Type of resistor: metal strip Resistance: 2mΩ Kind of resistor: current shunt; sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Power: 6W Tolerance: ±1% Operating temperature: -65...170°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SFH617A-2 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 63-125%@5mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 4.2µs Turn-off time: 1.8µs |
auf Bestellung 1424 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SFH617A-3X007T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-200%@60mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 3µs Turn-off time: 2.3µs |
auf Bestellung 7635 Stücke: Lieferzeit 14-21 Tag (e) |
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SFH617A-2X006 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 63-125%@5mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 4.2µs Turn-off time: 2.3µs |
auf Bestellung 181 Stücke: Lieferzeit 14-21 Tag (e) |
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SFH617A-2X009T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 63-125%@5mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 4.2µs Turn-off time: 2.3µs |
auf Bestellung 326 Stücke: Lieferzeit 14-21 Tag (e) |
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SFH617A-3X016 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 4.2µs Turn-off time: 2.3µs |
auf Bestellung 664 Stücke: Lieferzeit 14-21 Tag (e) |
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SFH617A-3X006 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 4.2µs Turn-off time: 2.3µs |
auf Bestellung 115 Stücke: Lieferzeit 14-21 Tag (e) |
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SFH617A-2X016 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 63-125%@5mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 4.2µs Turn-off time: 2.3µs |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SFH617A-3 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 4.2µs Turn-off time: 2.3µs |
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SFH617A-1X006 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 40-80%@10mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 3µs Turn-off time: 2.3µs |
Produkt ist nicht verfügbar |
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| SFH617A-1 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 40-80%@10mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 3µs Turn-off time: 18µs Max. off-state voltage: 6V Conform to the norm: UL Manufacturer series: SFH617A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SFH617A-3X017T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: SMD4 Turn-on time: 3µs Turn-off time: 2.3µs Max. off-state voltage: 6V Conform to the norm: UL Manufacturer series: SFH617A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SFH617A-1X007T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 40-80%@10mA Collector-emitter voltage: 70V Case: SMD4 Turn-on time: 3µs Turn-off time: 18µs Max. off-state voltage: 6V Conform to the norm: UL Manufacturer series: SFH617A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SFH617A-1X016 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 3µs Turn-off time: 2.3µs Max. off-state voltage: 6V Manufacturer series: SFH |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| SFH617A-2X017T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: SMD4 Turn-on time: 4.2µs Turn-off time: 23µs Max. off-state voltage: 6V Conform to the norm: UL; VDE Manufacturer series: SFH617A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SFH617A-1X001 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 3µs Turn-off time: 2.3µs Max. off-state voltage: 6V Manufacturer series: SFH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SFH617A-2X019 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV Collector-emitter voltage: 70V Case: SMD4 Turn-on time: 3µs Turn-off time: 2.3µs Max. off-state voltage: 6V Manufacturer series: SFH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| VS-3C20CP07L-M3 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.46V
Max. forward impulse current: 60A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.46V
Max. forward impulse current: 60A
Kind of package: tube
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
| VS-3C06ET07T-M3 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.5V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 42A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.5V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 42A
Kind of package: tube
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
| VS-3C08ET07T-M3 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 54A
Kind of package: tube
Technology: SiC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 54A
Kind of package: tube
Technology: SiC
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| VS-3C10ET07T-M3 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.46V
Max. forward impulse current: 60A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.46V
Max. forward impulse current: 60A
Kind of package: tube
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
| VS-3C16CP07L-M3 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Mounting: THT
Max. forward voltage: 1.5V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Type of diode: Schottky rectifying
Max. forward impulse current: 54A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Mounting: THT
Max. forward voltage: 1.5V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Type of diode: Schottky rectifying
Max. forward impulse current: 54A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-3C40CP07L-M3 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.5V
Max. forward impulse current: 110A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.5V
Max. forward impulse current: 110A
Kind of package: tube
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
| VS-3C12ET07S2L-M3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 83A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 12A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 83A
Kind of package: reel; tape
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
| VS-C06ET07T-M3 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 39A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 39A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXP120A250FL-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.5Ω
Pulsed drain current: 21A
Power dissipation: 22W
Gate charge: 20.3nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.5Ω
Pulsed drain current: 21A
Power dissipation: 22W
Gate charge: 20.3nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXP120A045FE-T1GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 85W
Technology: MaxSiC™; SiC
Mounting: SMD
Case: TO263-7
Kind of package: reel; tape
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 99mΩ
Pulsed drain current: 98A
Power dissipation: 85W
Gate charge: 75.6nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 85W
Technology: MaxSiC™; SiC
Mounting: SMD
Case: TO263-7
Kind of package: reel; tape
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 99mΩ
Pulsed drain current: 98A
Power dissipation: 85W
Gate charge: 75.6nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| MXP120A045FL-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 99mΩ
Pulsed drain current: 98A
Power dissipation: 91W
Gate charge: 75.6nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 99mΩ
Pulsed drain current: 98A
Power dissipation: 91W
Gate charge: 75.6nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXP120A045FW-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 99mΩ
Pulsed drain current: 98A
Power dissipation: 91W
Gate charge: 75.6nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 99mΩ
Pulsed drain current: 98A
Power dissipation: 91W
Gate charge: 75.6nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXP120A080FE-T1GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19A; Idm: 60A; 56W
Technology: MaxSiC™; SiC
Mounting: SMD
Case: TO263-7
Kind of package: reel; tape
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 19A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.175Ω
Pulsed drain current: 60A
Power dissipation: 56W
Gate charge: 47.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19A; Idm: 60A; 56W
Technology: MaxSiC™; SiC
Mounting: SMD
Case: TO263-7
Kind of package: reel; tape
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 19A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.175Ω
Pulsed drain current: 60A
Power dissipation: 56W
Gate charge: 47.3nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MXP120A080FL-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.175Ω
Pulsed drain current: 58A
Power dissipation: 56W
Gate charge: 47.3nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.175Ω
Pulsed drain current: 58A
Power dissipation: 56W
Gate charge: 47.3nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXP120A080FW-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.175Ω
Pulsed drain current: 58A
Power dissipation: 56W
Gate charge: 47.3nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.175Ω
Pulsed drain current: 58A
Power dissipation: 56W
Gate charge: 47.3nC
Produkt ist nicht verfügbar
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| MXP120A250FW-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.5Ω
Pulsed drain current: 21A
Power dissipation: 22W
Gate charge: 20.3nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.5Ω
Pulsed drain current: 21A
Power dissipation: 22W
Gate charge: 20.3nC
Produkt ist nicht verfügbar
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| VS-3C10CP12L-M3 |
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 30µA
Power dissipation: 83W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 30µA
Power dissipation: 83W
Produkt ist nicht verfügbar
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| VS-3C10EP12L-M3 |
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 60µA
Power dissipation: 115W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 60µA
Power dissipation: 115W
Produkt ist nicht verfügbar
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| VS-3C10ET12T-M3 |
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 60µA
Power dissipation: 94W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 60µA
Power dissipation: 94W
Produkt ist nicht verfügbar
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| VS-3C15EP12L-M3 |
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; Ir: 75uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 75µA
Power dissipation: 150W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; Ir: 75uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 75µA
Power dissipation: 150W
Produkt ist nicht verfügbar
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| VS-3C20EP12L-M3 |
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 110uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 110µA
Power dissipation: 188W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 110uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Kind of package: tube
Leakage current: 110µA
Power dissipation: 188W
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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| VS-3C20ET07T-M3 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 110A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 110A
Kind of package: tube
Produkt ist nicht verfügbar
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| VS-3C40CP12L-M3 |
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.35V
Max. forward impulse current: 148A
Kind of package: tube
Leakage current: 12µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.35V
Max. forward impulse current: 148A
Kind of package: tube
Leakage current: 12µA
Produkt ist nicht verfügbar
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| VS-C08ET07T-M3 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 57A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 57A
Kind of package: tube
Produkt ist nicht verfügbar
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| VS-C10ET07T-M3 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 68A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 68A
Kind of package: tube
Produkt ist nicht verfügbar
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| VS-C12ET07T-M3 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.65V
Max. forward impulse current: 80A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.65V
Max. forward impulse current: 80A
Kind of package: tube
Produkt ist nicht verfügbar
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| VS-C16CP07L-M3 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. forward impulse current: 53A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. forward impulse current: 53A
Kind of package: tube
Produkt ist nicht verfügbar
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| VS-C16ET07T-M3 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.65V
Max. forward impulse current: 120A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.65V
Max. forward impulse current: 120A
Kind of package: tube
Produkt ist nicht verfügbar
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| VS-C20CP07L-M3 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. forward impulse current: 64A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. forward impulse current: 64A
Kind of package: tube
Produkt ist nicht verfügbar
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| VS-3C04ET07S2L-M3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 29A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 29A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| VS-3C05ET12S2L-M3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 42A
Kind of package: reel; tape
Leakage current: 30µA
Power dissipation: 60W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 42A
Kind of package: reel; tape
Leakage current: 30µA
Power dissipation: 60W
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| VS-3C06ET07S2L-M3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 42A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 42A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| VS-3C08ET07S2L-M3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 54A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 54A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| VS-3C10ET07S2L-M3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.46V
Max. forward impulse current: 60A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.46V
Max. forward impulse current: 60A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| VS-3C10ET12S2L-M3 |
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 1.2kV; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 84A
Kind of package: reel; tape
Power dissipation: 94W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 1.2kV; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 84A
Kind of package: reel; tape
Power dissipation: 94W
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| VS-3C15ET12S2L-M3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 1.2kV; 15A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 110A
Kind of package: reel; tape
Power dissipation: 111W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 1.2kV; 15A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. forward impulse current: 110A
Kind of package: reel; tape
Power dissipation: 111W
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| CRCW0805127KFKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 127kΩ; SMD; 0805; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 127kΩ
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 127kΩ; SMD; 0805; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 127kΩ
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
auf Bestellung 4800 Stücke:
Lieferzeit 14-21 Tag (e)
| SIHA6N65E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| IL213AT |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; Uce: 30V; SOIC8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4kV
CTR@If: 100-130%@10mA
Collector-emitter voltage: 30V
Case: SOIC8
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: IL21XAT
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; Uce: 30V; SOIC8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4kV
CTR@If: 100-130%@10mA
Collector-emitter voltage: 30V
Case: SOIC8
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: IL21XAT
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
| SMCJ170CA-E3/57T |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; bidirectional; DO214AB,SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; bidirectional; DO214AB,SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 1700 Stücke
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| SMCJ170CA-E3/9AT |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; bidirectional; DO214AB,SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; bidirectional; DO214AB,SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
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| SIHLL014TR-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; Idm: 22A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.7A
Pulsed drain current: 22A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; Idm: 22A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.7A
Pulsed drain current: 22A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| CRCW251251R0FKEG |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 51Ω; SMD; 2512; 1W; ±1%; 500V; 6.3x3.15x0.6mm
Type of resistor: thick film
Resistance: 51Ω
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Operating temperature: -55...155°C
Body dimensions: 6.3x3.15x0.6mm
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 4000pcs.
Category: SMD resistors
Description: Resistor: thick film; 51Ω; SMD; 2512; 1W; ±1%; 500V; 6.3x3.15x0.6mm
Type of resistor: thick film
Resistance: 51Ω
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Operating temperature: -55...155°C
Body dimensions: 6.3x3.15x0.6mm
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 4000pcs.
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| WSLF25122L000FEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; 2mΩ; current shunt,sensing; SMD; 2512; 6W
Type of resistor: metal strip
Resistance: 2mΩ
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Power: 6W
Tolerance: ±1%
Operating temperature: -65...170°C
Category: SMD resistors
Description: Resistor: metal strip; 2mΩ; current shunt,sensing; SMD; 2512; 6W
Type of resistor: metal strip
Resistance: 2mΩ
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Power: 6W
Tolerance: ±1%
Operating temperature: -65...170°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| SFH617A-2 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4.2µs
Turn-off time: 1.8µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4.2µs
Turn-off time: 1.8µs
auf Bestellung 1424 Stücke:
Lieferzeit 14-21 Tag (e)
| SFH617A-3X007T |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@60mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 3µs
Turn-off time: 2.3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@60mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 3µs
Turn-off time: 2.3µs
auf Bestellung 7635 Stücke:
Lieferzeit 14-21 Tag (e)
| SFH617A-2X006 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4.2µs
Turn-off time: 2.3µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4.2µs
Turn-off time: 2.3µs
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
| SFH617A-2X009T |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@5mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 2.3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@5mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 2.3µs
auf Bestellung 326 Stücke:
Lieferzeit 14-21 Tag (e)
| SFH617A-3X016 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4.2µs
Turn-off time: 2.3µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4.2µs
Turn-off time: 2.3µs
auf Bestellung 664 Stücke:
Lieferzeit 14-21 Tag (e)
| SFH617A-3X006 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4.2µs
Turn-off time: 2.3µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4.2µs
Turn-off time: 2.3µs
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
| SFH617A-2X016 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4.2µs
Turn-off time: 2.3µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4.2µs
Turn-off time: 2.3µs
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| SFH617A-3 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4.2µs
Turn-off time: 2.3µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4.2µs
Turn-off time: 2.3µs
auf Bestellung 1873 Stücke:
Lieferzeit 14-21 Tag (e)
| SFH617A-1X006 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 3µs
Turn-off time: 2.3µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 3µs
Turn-off time: 2.3µs
Produkt ist nicht verfügbar
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| SFH617A-1 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 3µs
Turn-off time: 18µs
Max. off-state voltage: 6V
Conform to the norm: UL
Manufacturer series: SFH617A
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 3µs
Turn-off time: 18µs
Max. off-state voltage: 6V
Conform to the norm: UL
Manufacturer series: SFH617A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SFH617A-3X017T |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SMD4
Turn-on time: 3µs
Turn-off time: 2.3µs
Max. off-state voltage: 6V
Conform to the norm: UL
Manufacturer series: SFH617A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SMD4
Turn-on time: 3µs
Turn-off time: 2.3µs
Max. off-state voltage: 6V
Conform to the norm: UL
Manufacturer series: SFH617A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SFH617A-1X007T |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: SMD4
Turn-on time: 3µs
Turn-off time: 18µs
Max. off-state voltage: 6V
Conform to the norm: UL
Manufacturer series: SFH617A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: SMD4
Turn-on time: 3µs
Turn-off time: 18µs
Max. off-state voltage: 6V
Conform to the norm: UL
Manufacturer series: SFH617A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SFH617A-1X016 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 3µs
Turn-off time: 2.3µs
Max. off-state voltage: 6V
Manufacturer series: SFH
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 3µs
Turn-off time: 2.3µs
Max. off-state voltage: 6V
Manufacturer series: SFH
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SFH617A-2X017T |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: SMD4
Turn-on time: 4.2µs
Turn-off time: 23µs
Max. off-state voltage: 6V
Conform to the norm: UL; VDE
Manufacturer series: SFH617A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: SMD4
Turn-on time: 4.2µs
Turn-off time: 23µs
Max. off-state voltage: 6V
Conform to the norm: UL; VDE
Manufacturer series: SFH617A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SFH617A-1X001 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 3µs
Turn-off time: 2.3µs
Max. off-state voltage: 6V
Manufacturer series: SFH
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 3µs
Turn-off time: 2.3µs
Max. off-state voltage: 6V
Manufacturer series: SFH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SFH617A-2X019 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: SMD4
Turn-on time: 3µs
Turn-off time: 2.3µs
Max. off-state voltage: 6V
Manufacturer series: SFH
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 70V
Case: SMD4
Turn-on time: 3µs
Turn-off time: 2.3µs
Max. off-state voltage: 6V
Manufacturer series: SFH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH