Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (129128) > Seite 2125 nach 2153
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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XMC1100T016F0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH Type of integrated circuit: ARM microcontroller Memory: 16kB SRAM; 64kB FLASH Interface: GPIO Case: PG-TSSOP-16 Operating temperature: -40...85°C Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Kind of architecture: Cortex M0 Kind of core: 32-bit Number of 16bit timers: 4 Family: XMC1100 Supply voltage: 1.8...5.5V DC Number of A/D channels: 6 Number of inputs/outputs: 14 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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XMC1100T016X0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH Type of integrated circuit: ARM microcontroller Memory: 16kB SRAM; 32kB FLASH Interface: GPIO Case: PG-TSSOP-16 Operating temperature: -40...105°C Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Kind of architecture: Cortex M0 Kind of core: 32-bit Number of 16bit timers: 4 Family: XMC1100 Supply voltage: 1.8...5.5V DC Number of A/D channels: 6 Number of inputs/outputs: 14 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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XMC1100T016X0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH Type of integrated circuit: ARM microcontroller Memory: 16kB SRAM; 64kB FLASH Interface: GPIO Case: PG-TSSOP-16 Operating temperature: -40...105°C Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Kind of architecture: Cortex M0 Kind of core: 32-bit Number of 16bit timers: 4 Family: XMC1100 Supply voltage: 1.8...5.5V DC Number of A/D channels: 6 Number of inputs/outputs: 14 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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XMC1100T038F0016ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM Type of integrated circuit: ARM microcontroller Memory: 16kB FLASH; 16kB SRAM Interface: GPIO Case: PG-TSSOP-38 Operating temperature: -40...85°C Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Kind of architecture: Cortex M0 Kind of core: 32-bit Number of 16bit timers: 4 Family: XMC1100 Supply voltage: 1.8...5.5V DC Number of A/D channels: 12 Number of inputs/outputs: 34 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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XMC1100T038X0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH Type of integrated circuit: ARM microcontroller Memory: 16kB SRAM; 64kB FLASH Interface: GPIO Case: PG-TSSOP-38 Operating temperature: -40...105°C Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog Kind of architecture: Cortex M0 Kind of core: 32-bit Number of 16bit timers: 4 Family: XMC1100 Supply voltage: 1.8...5.5V DC Number of A/D channels: 12 Number of inputs/outputs: 34 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| XMC1201Q040F0200ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,200kBFLASH Type of integrated circuit: ARM microcontroller Memory: 16kB SRAM; 200kB FLASH Interface: GPIO Case: PG-VQFN-40 Operating temperature: -40...85°C Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Kind of architecture: Cortex M0 Kind of core: 32-bit Number of 16bit timers: 4 Family: XMC1200 Supply voltage: 1.8...5.5V DC Number of A/D channels: 12 Number of inputs/outputs: 34 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SMBTA06E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 100MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SMBTA06E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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AUIRFR2905ZTRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 42A; 110W; DPAK,TO252 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 42A Power dissipation: 110W Case: DPAK; TO252 On-state resistance: 11.1mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| ESD121B1W0201E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS Type of diode: TVS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BAT165E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.75A Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.75A Semiconductor structure: single diode Max. forward voltage: 0.74V |
auf Bestellung 49931 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BAT165E6874HTMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching Type of diode: Schottky switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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BSZ0503NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 82A; 36W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 82A Power dissipation: 36W Case: PG-TDSON-8 On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IKW40N65ET7XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; Field Stop; 650V; 76A; 230.8W; TO247-3; 1.05mJ Type of transistor: IGBT Technology: Field Stop; Trench Collector-emitter voltage: 650V Collector current: 76A Power dissipation: 230.8W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Turn-on switching energy: 1.05mJ Gate charge: 235nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IKW40N65RH5XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| AIGB40N65F5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| AIGB40N65H5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| AIKB40N65DF5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| AIKB40N65DH5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IKFW40N65DH5XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IKFW40N65ES5XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPD50R500CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK Case: DPAK Mounting: SMD Kind of package: reel Polarisation: unipolar Technology: CoolMOS™ CE Drain current: 4.8A Kind of channel: enhancement Drain-source voltage: 500V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 0.5Ω Pulsed drain current: 24A Power dissipation: 57W Gate charge: 18.7nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFS3004TRL7PP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 400A; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 400A Case: D2PAK-7 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IKW30N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 94W Case: TO247-3 Mounting: THT Gate charge: 70nC Kind of package: tube Pulsed collector current: 90A Turn-on time: 31ns Turn-off time: 209ns Gate-emitter voltage: ±20V Collector current: 35A Manufacturer series: H5 Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKW30N65EL5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 62A; 114W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 114W Case: TO247-3 Mounting: THT Gate charge: 168nC Kind of package: tube Pulsed collector current: 120A Turn-on time: 44ns Turn-off time: 359ns Gate-emitter voltage: ±20V Collector current: 62A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 225 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKW30N65WR5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 30A; 75W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 75W Case: TO247-3 Mounting: THT Gate charge: 155nC Kind of package: tube Pulsed collector current: 90A Turn-on time: 51ns Turn-off time: 376ns Gate-emitter voltage: ±20V Collector current: 30A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CY8C4013SXI-411T | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: microcontroller Type of integrated circuit: microcontroller |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BSP50H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 45V; 1A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1.5W Case: SOT223 Mounting: SMD Frequency: 200MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IQE006NE2LM5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IQE006NE2LM5CGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IQE006NE2LM5SCATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IKN01N60RC2ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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FM25V20A-DGQ | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8 Interface: SPI Clock frequency: 40MHz Memory: 2Mb FRAM Kind of interface: serial Memory organisation: 256kx8bit Case: DFN8 Kind of memory: FRAM Mounting: SMD Supply voltage: 2...3.6V DC Type of integrated circuit: FRAM memory Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FM25V20A-DG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8 Interface: SPI Clock frequency: 40MHz Memory: 2Mb FRAM Kind of interface: serial Memory organisation: 256kx8bit Case: DFN8 Kind of memory: FRAM Mounting: SMD Supply voltage: 2...3.6V DC Type of integrated circuit: FRAM memory Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FM25V20A-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 2Mb FRAM Interface: SPI Memory organisation: 256kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: DFN8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FM25V20A-PG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory Type of integrated circuit: FRAM memory |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 795 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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FM25V01A-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 128kb FRAM Interface: SPI Memory organisation: 16kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FM25V02A-DGQ | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: SPI Memory organisation: 32kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: DFN8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FM25V10-DGTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory Type of integrated circuit: FRAM memory |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IRFB7734PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 183A Power dissipation: 290W Case: TO220AB On-state resistance: 2.8mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IMT65R022M1HXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPW65R022CFD7AXKSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPA60R280P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; 24W; TO220FP Type of transistor: N-MOSFET On-state resistance: 214mΩ Mounting: THT Power dissipation: 24W Gate charge: 18nC Polarisation: unipolar Drain current: 12A Kind of channel: enhancement Drain-source voltage: 600V Case: TO220FP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPP80R450P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 7.1A; Idm: 29A; 73W; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.1A Power dissipation: 73W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Kind of channel: enhancement Pulsed drain current: 29A Version: ESD |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IAUC70N08S5N074ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8 Mounting: SMD Technology: OptiMOS™ 5 Drain current: 47A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PG-TDSON-8 On-state resistance: 7.4mΩ Pulsed drain current: 280A Power dissipation: 83W Polarisation: unipolar |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPTC011N08NM5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPTG011N08NM5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IDH04SG60CXKSA2 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 4A; PG-TO220-2; Ir: 25uA Max. forward impulse current: 18A Max. forward voltage: 2.3V Technology: CoolSiC™; SiC Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Leakage current: 25µA Case: PG-TO220-2 Type of diode: Schottky rectifying Mounting: THT |
auf Bestellung 132 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFI1310NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 76 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFB7437PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB Mounting: THT Power dissipation: 230W Gate charge: 150nC Polarisation: unipolar Technology: HEXFET® Drain current: 250A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB On-state resistance: 2mΩ Trade name: StrongIRFET |
auf Bestellung 255 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFB52N15DPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 60A Power dissipation: 320W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 32mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFB7534PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 195A Power dissipation: 294W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Gate charge: 186nC Kind of package: tube Kind of channel: enhancement Trade name: StrongIRFET Technology: HEXFET® |
auf Bestellung 585 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IDP30E120XKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 30A; TO220-2; tube Max. off-state voltage: 1.2kV Load current: 30A Case: TO220-2 Features of semiconductor devices: fast switching Kind of package: tube Semiconductor structure: single diode Type of diode: rectifying Mounting: THT |
auf Bestellung 538 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IDP18E120XKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 18A; TO220-2; tube Type of diode: rectifying Case: TO220-2 Mounting: THT Max. off-state voltage: 1.2kV Load current: 18A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube |
auf Bestellung 731 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IDV15E65D2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodesDescription: Diode: rectifying; THT; 650V; 15A; Ifsm: 100A; TO220FP-2; tube Type of diode: rectifying Case: TO220FP-2 Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 100A Kind of package: tube |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IDW15E65D2FKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodesDescription: Diode: rectifying; THT; 650V; 30A; Ifsm: 100A; TO247-3; tube Type of diode: rectifying Case: TO247-3 Mounting: THT Max. off-state voltage: 650V Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 100A Kind of package: tube |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IDP15E65D2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodesDescription: Diode: rectifying; THT; 650V; 15A; Ifsm: 100A; TO220-2; tube; 47ns Mounting: THT Max. forward impulse current: 100A Features of semiconductor devices: fast switching Max. off-state voltage: 650V Load current: 15A Kind of package: tube Semiconductor structure: single diode Case: TO220-2 Type of diode: rectifying Reverse recovery time: 47ns |
auf Bestellung 325 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IDP40E65D2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodesDescription: Diode: rectifying; THT; 650V; 40A; Ifsm: 250A; TO220-2; tube; 36ns Type of diode: rectifying Case: TO220-2 Mounting: THT Max. off-state voltage: 650V Load current: 40A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 250A Kind of package: tube Reverse recovery time: 36ns |
auf Bestellung 72 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
IDV08E65D2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodesDescription: Diode: rectifying; THT; 650V; 8A; Ifsm: 60A; TO220FP-2; tube; 40ns Type of diode: rectifying Case: TO220FP-2 Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 60A Kind of package: tube Reverse recovery time: 40ns |
auf Bestellung 195 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
|
BAS140WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW Mounting: SMD Max. forward impulse current: 0.2A Max. forward voltage: 1V Power dissipation: 0.25W Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: single diode Case: SOD323 Type of diode: Schottky switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| XMC1100T016F0064ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 16kB SRAM; 64kB FLASH
Interface: GPIO
Case: PG-TSSOP-16
Operating temperature: -40...85°C
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 6
Number of inputs/outputs: 14
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 16kB SRAM; 64kB FLASH
Interface: GPIO
Case: PG-TSSOP-16
Operating temperature: -40...85°C
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 6
Number of inputs/outputs: 14
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
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| XMC1100T016X0032ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 16kB SRAM; 32kB FLASH
Interface: GPIO
Case: PG-TSSOP-16
Operating temperature: -40...105°C
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 6
Number of inputs/outputs: 14
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 16kB SRAM; 32kB FLASH
Interface: GPIO
Case: PG-TSSOP-16
Operating temperature: -40...105°C
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 6
Number of inputs/outputs: 14
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| XMC1100T016X0064ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 16kB SRAM; 64kB FLASH
Interface: GPIO
Case: PG-TSSOP-16
Operating temperature: -40...105°C
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 6
Number of inputs/outputs: 14
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 16kB SRAM; 64kB FLASH
Interface: GPIO
Case: PG-TSSOP-16
Operating temperature: -40...105°C
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 6
Number of inputs/outputs: 14
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| XMC1100T038F0016ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM
Type of integrated circuit: ARM microcontroller
Memory: 16kB FLASH; 16kB SRAM
Interface: GPIO
Case: PG-TSSOP-38
Operating temperature: -40...85°C
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of inputs/outputs: 34
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM
Type of integrated circuit: ARM microcontroller
Memory: 16kB FLASH; 16kB SRAM
Interface: GPIO
Case: PG-TSSOP-38
Operating temperature: -40...85°C
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of inputs/outputs: 34
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| XMC1100T038X0064ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 16kB SRAM; 64kB FLASH
Interface: GPIO
Case: PG-TSSOP-38
Operating temperature: -40...105°C
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of inputs/outputs: 34
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 16kB SRAM; 64kB FLASH
Interface: GPIO
Case: PG-TSSOP-38
Operating temperature: -40...105°C
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of inputs/outputs: 34
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| XMC1201Q040F0200ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 16kB SRAM; 200kB FLASH
Interface: GPIO
Case: PG-VQFN-40
Operating temperature: -40...85°C
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1200
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of inputs/outputs: 34
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 16kB SRAM; 200kB FLASH
Interface: GPIO
Case: PG-VQFN-40
Operating temperature: -40...85°C
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1200
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of inputs/outputs: 34
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMBTA06E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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Stück im Wert von UAH
| SMBTA06E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AUIRFR2905ZTRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| ESD121B1W0201E6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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Stück im Wert von UAH
| BAT165E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.75A
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.75A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.75A
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.75A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
auf Bestellung 49931 Stücke:
Lieferzeit 14-21 Tag (e)
| BAT165E6874HTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSZ0503NSIATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 82A; 36W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 82A
Power dissipation: 36W
Case: PG-TDSON-8
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 82A; 36W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 82A
Power dissipation: 36W
Case: PG-TDSON-8
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| IKW40N65ET7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 76A; 230.8W; TO247-3; 1.05mJ
Type of transistor: IGBT
Technology: Field Stop; Trench
Collector-emitter voltage: 650V
Collector current: 76A
Power dissipation: 230.8W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Turn-on switching energy: 1.05mJ
Gate charge: 235nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 76A; 230.8W; TO247-3; 1.05mJ
Type of transistor: IGBT
Technology: Field Stop; Trench
Collector-emitter voltage: 650V
Collector current: 76A
Power dissipation: 230.8W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Turn-on switching energy: 1.05mJ
Gate charge: 235nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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| IKW40N65RH5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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Stück im Wert von UAH
| AIGB40N65F5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| AIGB40N65H5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| AIKB40N65DF5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| AIKB40N65DH5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| IKFW40N65DH5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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Stück im Wert von UAH
| IKFW40N65ES5XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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Stück im Wert von UAH
| IPD50R500CEAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: CoolMOS™ CE
Drain current: 4.8A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Pulsed drain current: 24A
Power dissipation: 57W
Gate charge: 18.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: CoolMOS™ CE
Drain current: 4.8A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Pulsed drain current: 24A
Power dissipation: 57W
Gate charge: 18.7nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS3004TRL7PP |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 400A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 400A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 400A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 400A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKW30N65H5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Pulsed collector current: 90A
Turn-on time: 31ns
Turn-off time: 209ns
Gate-emitter voltage: ±20V
Collector current: 35A
Manufacturer series: H5
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Pulsed collector current: 90A
Turn-on time: 31ns
Turn-off time: 209ns
Gate-emitter voltage: ±20V
Collector current: 35A
Manufacturer series: H5
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW30N65EL5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Pulsed collector current: 120A
Turn-on time: 44ns
Turn-off time: 359ns
Gate-emitter voltage: ±20V
Collector current: 62A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Pulsed collector current: 120A
Turn-on time: 44ns
Turn-off time: 359ns
Gate-emitter voltage: ±20V
Collector current: 62A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW30N65WR5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Pulsed collector current: 90A
Turn-on time: 51ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Pulsed collector current: 90A
Turn-on time: 51ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4013SXI-411T |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| BSP50H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
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| IQE006NE2LM5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IQE006NE2LM5CGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IQE006NE2LM5SCATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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| IKN01N60RC2ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FM25V20A-DGQ |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Interface: SPI
Clock frequency: 40MHz
Memory: 2Mb FRAM
Kind of interface: serial
Memory organisation: 256kx8bit
Case: DFN8
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Interface: SPI
Clock frequency: 40MHz
Memory: 2Mb FRAM
Kind of interface: serial
Memory organisation: 256kx8bit
Case: DFN8
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25V20A-DG |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Interface: SPI
Clock frequency: 40MHz
Memory: 2Mb FRAM
Kind of interface: serial
Memory organisation: 256kx8bit
Case: DFN8
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Interface: SPI
Clock frequency: 40MHz
Memory: 2Mb FRAM
Kind of interface: serial
Memory organisation: 256kx8bit
Case: DFN8
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25V20A-G |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 2Mb FRAM
Interface: SPI
Memory organisation: 256kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 2Mb FRAM
Interface: SPI
Memory organisation: 256kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25V20A-PG |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory
Type of integrated circuit: FRAM memory
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 795 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FM25V01A-G |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 128kb FRAM
Interface: SPI
Memory organisation: 16kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 128kb FRAM
Interface: SPI
Memory organisation: 16kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
| FM25V02A-DGQ |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25V10-DGTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory
Type of integrated circuit: FRAM memory
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| IRFB7734PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 183A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 183A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IMT65R022M1HXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| IPW65R022CFD7AXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPA60R280P7SXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 24W; TO220FP
Type of transistor: N-MOSFET
On-state resistance: 214mΩ
Mounting: THT
Power dissipation: 24W
Gate charge: 18nC
Polarisation: unipolar
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 600V
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 24W; TO220FP
Type of transistor: N-MOSFET
On-state resistance: 214mΩ
Mounting: THT
Power dissipation: 24W
Gate charge: 18nC
Polarisation: unipolar
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 600V
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP80R450P7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; Idm: 29A; 73W; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 29A
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; Idm: 29A; 73W; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 29A
Version: ESD
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
| IAUC70N08S5N074ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Drain current: 47A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-TDSON-8
On-state resistance: 7.4mΩ
Pulsed drain current: 280A
Power dissipation: 83W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Drain current: 47A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-TDSON-8
On-state resistance: 7.4mΩ
Pulsed drain current: 280A
Power dissipation: 83W
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPTC011N08NM5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPTG011N08NM5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IDH04SG60CXKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; PG-TO220-2; Ir: 25uA
Max. forward impulse current: 18A
Max. forward voltage: 2.3V
Technology: CoolSiC™; SiC
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Leakage current: 25µA
Case: PG-TO220-2
Type of diode: Schottky rectifying
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; PG-TO220-2; Ir: 25uA
Max. forward impulse current: 18A
Max. forward voltage: 2.3V
Technology: CoolSiC™; SiC
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Leakage current: 25µA
Case: PG-TO220-2
Type of diode: Schottky rectifying
Mounting: THT
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFI1310NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB7437PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Mounting: THT
Power dissipation: 230W
Gate charge: 150nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 250A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 2mΩ
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Mounting: THT
Power dissipation: 230W
Gate charge: 150nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 250A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 2mΩ
Trade name: StrongIRFET
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB52N15DPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB7534PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 186nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 186nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
auf Bestellung 585 Stücke:
Lieferzeit 14-21 Tag (e)
| IDP30E120XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; TO220-2; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO220-2
Features of semiconductor devices: fast switching
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; TO220-2; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO220-2
Features of semiconductor devices: fast switching
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
Mounting: THT
auf Bestellung 538 Stücke:
Lieferzeit 14-21 Tag (e)
| IDP18E120XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 18A; TO220-2; tube
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 18A; TO220-2; tube
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
auf Bestellung 731 Stücke:
Lieferzeit 14-21 Tag (e)
| IDV15E65D2XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; Ifsm: 100A; TO220FP-2; tube
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 100A
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; Ifsm: 100A; TO220FP-2; tube
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 100A
Kind of package: tube
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
| IDW15E65D2FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; Ifsm: 100A; TO247-3; tube
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 100A
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; Ifsm: 100A; TO247-3; tube
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 100A
Kind of package: tube
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IDP15E65D2XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; Ifsm: 100A; TO220-2; tube; 47ns
Mounting: THT
Max. forward impulse current: 100A
Features of semiconductor devices: fast switching
Max. off-state voltage: 650V
Load current: 15A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220-2
Type of diode: rectifying
Reverse recovery time: 47ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; Ifsm: 100A; TO220-2; tube; 47ns
Mounting: THT
Max. forward impulse current: 100A
Features of semiconductor devices: fast switching
Max. off-state voltage: 650V
Load current: 15A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220-2
Type of diode: rectifying
Reverse recovery time: 47ns
auf Bestellung 325 Stücke:
Lieferzeit 14-21 Tag (e)
| IDP40E65D2XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 40A; Ifsm: 250A; TO220-2; tube; 36ns
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Kind of package: tube
Reverse recovery time: 36ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 40A; Ifsm: 250A; TO220-2; tube; 36ns
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Kind of package: tube
Reverse recovery time: 36ns
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
| IDV08E65D2XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 8A; Ifsm: 60A; TO220FP-2; tube; 40ns
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 40ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 8A; Ifsm: 60A; TO220FP-2; tube; 40ns
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 40ns
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
| BAS140WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW
Mounting: SMD
Max. forward impulse current: 0.2A
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Case: SOD323
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW
Mounting: SMD
Max. forward impulse current: 0.2A
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Case: SOD323
Type of diode: Schottky switching
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