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XMC1100T016F0064ABXUMA1 XMC1100T016F0064ABXUMA1 INFINEON TECHNOLOGIES XMC1300-AB-EN.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 16kB SRAM; 64kB FLASH
Interface: GPIO
Case: PG-TSSOP-16
Operating temperature: -40...85°C
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 6
Number of inputs/outputs: 14
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XMC1100T016X0032ABXUMA1 XMC1100T016X0032ABXUMA1 INFINEON TECHNOLOGIES XMC1300-AB-EN.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 16kB SRAM; 32kB FLASH
Interface: GPIO
Case: PG-TSSOP-16
Operating temperature: -40...105°C
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 6
Number of inputs/outputs: 14
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XMC1100T016X0064ABXUMA1 XMC1100T016X0064ABXUMA1 INFINEON TECHNOLOGIES XMC1300-AB-EN.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 16kB SRAM; 64kB FLASH
Interface: GPIO
Case: PG-TSSOP-16
Operating temperature: -40...105°C
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 6
Number of inputs/outputs: 14
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XMC1100T038F0016ABXUMA1 XMC1100T038F0016ABXUMA1 INFINEON TECHNOLOGIES XMC1300-AB-EN.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM
Type of integrated circuit: ARM microcontroller
Memory: 16kB FLASH; 16kB SRAM
Interface: GPIO
Case: PG-TSSOP-38
Operating temperature: -40...85°C
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of inputs/outputs: 34
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XMC1100T038X0064ABXUMA1 XMC1100T038X0064ABXUMA1 INFINEON TECHNOLOGIES XMC1300-AB-EN.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 16kB SRAM; 64kB FLASH
Interface: GPIO
Case: PG-TSSOP-38
Operating temperature: -40...105°C
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of inputs/outputs: 34
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XMC1201Q040F0200ABXUMA1 INFINEON TECHNOLOGIES XMC1300-AB-EN.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 16kB SRAM; 200kB FLASH
Interface: GPIO
Case: PG-VQFN-40
Operating temperature: -40...85°C
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1200
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of inputs/outputs: 34
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SMBTA06E6327 SMBTA06E6327 INFINEON TECHNOLOGIES SMBTA06E6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
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SMBTA06E6327HTSA1 INFINEON TECHNOLOGIES smbta06_mmbta06.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca3890115478ecca71a2d Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
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AUIRFR2905ZTRL AUIRFR2905ZTRL INFINEON TECHNOLOGIES auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Application: automotive industry
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ESD121B1W0201E6327XTSA1 INFINEON TECHNOLOGIES Infineon-ESD121-B1-W0201-DataSheet-v01_01-EN.pdf?fileId=5546d46272aa54c00172cccef3990175 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
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BAT165E6327HTSA1 BAT165E6327HTSA1 INFINEON TECHNOLOGIES BAT165E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.75A
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.75A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
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BAT165E6874HTMA1 INFINEON TECHNOLOGIES bat165series.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a304313d846880113df01f69804d6 Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
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BSZ0503NSIATMA1 BSZ0503NSIATMA1 INFINEON TECHNOLOGIES Infineon-BSZ0503NSI-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f3c2d37301ce7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 82A; 36W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 82A
Power dissipation: 36W
Case: PG-TDSON-8
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
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IKW40N65ET7XKSA1 INFINEON TECHNOLOGIES Infineon-IKW40N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351bec5a657f5 Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 76A; 230.8W; TO247-3; 1.05mJ
Type of transistor: IGBT
Technology: Field Stop; Trench
Collector-emitter voltage: 650V
Collector current: 76A
Power dissipation: 230.8W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Turn-on switching energy: 1.05mJ
Gate charge: 235nC
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IKW40N65RH5XKSA1 INFINEON TECHNOLOGIES Infineon-IKW40N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc16a3d630f8 Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
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AIGB40N65F5ATMA1 INFINEON TECHNOLOGIES Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
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AIGB40N65H5ATMA1 INFINEON TECHNOLOGIES Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
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AIKB40N65DF5ATMA1 INFINEON TECHNOLOGIES Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
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AIKB40N65DH5ATMA1 INFINEON TECHNOLOGIES Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
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IKFW40N65DH5XKSA1 INFINEON TECHNOLOGIES Infineon-IKFW40N65DH5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d972f3891f03 Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
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IKFW40N65ES5XKSA1 INFINEON TECHNOLOGIES Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
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IPD50R500CEAUMA1 IPD50R500CEAUMA1 INFINEON TECHNOLOGIES IPD50R500CE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: CoolMOS™ CE
Drain current: 4.8A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Pulsed drain current: 24A
Power dissipation: 57W
Gate charge: 18.7nC
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IRFS3004TRL7PP INFINEON TECHNOLOGIES irfs3004-7ppbf.pdf?fileId=5546d462533600a40153563631632147 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 400A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 400A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IKW30N65H5XKSA1 IKW30N65H5XKSA1 INFINEON TECHNOLOGIES ikw30n65h5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Pulsed collector current: 90A
Turn-on time: 31ns
Turn-off time: 209ns
Gate-emitter voltage: ±20V
Collector current: 35A
Manufacturer series: H5
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
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IKW30N65EL5XKSA1 IKW30N65EL5XKSA1 INFINEON TECHNOLOGIES IKW30N65EL5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Pulsed collector current: 120A
Turn-on time: 44ns
Turn-off time: 359ns
Gate-emitter voltage: ±20V
Collector current: 62A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
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IKW30N65WR5XKSA1 IKW30N65WR5XKSA1 INFINEON TECHNOLOGIES IKW30N65WR5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Pulsed collector current: 90A
Turn-on time: 51ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
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CY8C4013SXI-411T INFINEON TECHNOLOGIES Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
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BSP50H6327XTSA1 BSP50H6327XTSA1 INFINEON TECHNOLOGIES BSP50H6327XTSA1.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
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IQE006NE2LM5ATMA1 INFINEON TECHNOLOGIES Infineon-IQE006NE2LM5-DataSheet-v02_01-EN.pdf?fileId=5546d4626f229553016f8b08cb821aa4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IQE006NE2LM5CGATMA1 INFINEON TECHNOLOGIES Infineon-IQE006NE2LM5CG-DataSheet-v02_01-EN.pdf?fileId=5546d4626f229553016f8b11f53c1aa7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IQE006NE2LM5SCATMA1 INFINEON TECHNOLOGIES Infineon-IQE006NE2LM5SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181c84bdaa41805 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IKN01N60RC2ATMA1 INFINEON TECHNOLOGIES infineon-ikn01n60rc2-datasheet-en.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
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FM25V20A-DGQ FM25V20A-DGQ INFINEON TECHNOLOGIES FM25V20A-DGQ-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Interface: SPI
Clock frequency: 40MHz
Memory: 2Mb FRAM
Kind of interface: serial
Memory organisation: 256kx8bit
Case: DFN8
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
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FM25V20A-DG FM25V20A-DG INFINEON TECHNOLOGIES FM25V20A-DG-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Interface: SPI
Clock frequency: 40MHz
Memory: 2Mb FRAM
Kind of interface: serial
Memory organisation: 256kx8bit
Case: DFN8
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
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FM25V20A-G FM25V20A-G INFINEON TECHNOLOGIES FM25V20A-DG-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 2Mb FRAM
Interface: SPI
Memory organisation: 256kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
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FM25V20A-PG INFINEON TECHNOLOGIES FM25V20A_PDIP_RevE_2-9-24.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory
Type of integrated circuit: FRAM memory
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FM25V01A-G FM25V01A-G INFINEON TECHNOLOGIES FM25V01A-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 128kb FRAM
Interface: SPI
Memory organisation: 16kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
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FM25V02A-DGQ FM25V02A-DGQ INFINEON TECHNOLOGIES FM25V02A-DGQ-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
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FM25V10-DGTR INFINEON TECHNOLOGIES Infineon-FM25V10_1_Mbit_128K_X_8_Serial_SPI_F_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f1be7c4f91516 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory
Type of integrated circuit: FRAM memory
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IRFB7734PBF IRFB7734PBF INFINEON TECHNOLOGIES IRFB7734PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 183A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IMT65R022M1HXUMA1 INFINEON TECHNOLOGIES Infineon-IMT65R022M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f4b265b71bb Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IPW65R022CFD7AXKSA1 INFINEON TECHNOLOGIES Infineon-IPW65R022CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46279cccfdb0179ccdff29c02d5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IPA60R280P7SXKSA1 IPA60R280P7SXKSA1 INFINEON TECHNOLOGIES infineon-ipa60r280p7s-datasheet-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 24W; TO220FP
Type of transistor: N-MOSFET
On-state resistance: 214mΩ
Mounting: THT
Power dissipation: 24W
Gate charge: 18nC
Polarisation: unipolar
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 600V
Case: TO220FP
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IPP80R450P7XKSA1 IPP80R450P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e459bf0619fd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; Idm: 29A; 73W; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 29A
Version: ESD
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IAUC70N08S5N074ATMA1 IAUC70N08S5N074ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC70N08S5N074-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a531f6aa0013 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Drain current: 47A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-TDSON-8
On-state resistance: 7.4mΩ
Pulsed drain current: 280A
Power dissipation: 83W
Polarisation: unipolar
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IPTC011N08NM5ATMA1 INFINEON TECHNOLOGIES Infineon-IPTC011N08NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183e988ff2f7436 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPTG011N08NM5ATMA1 INFINEON TECHNOLOGIES Infineon-IPTG011N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa3f5c9e7d54 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IDH04SG60CXKSA2 IDH04SG60CXKSA2 INFINEON TECHNOLOGIES IDH04SG60C_rev2.2_.pdf?folderId=db3a30431d8a6b3c011dbeca72db281a&fileId=db3a30431f848401011ff4cbbf635316 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; PG-TO220-2; Ir: 25uA
Max. forward impulse current: 18A
Max. forward voltage: 2.3V
Technology: CoolSiC™; SiC
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Leakage current: 25µA
Case: PG-TO220-2
Type of diode: Schottky rectifying
Mounting: THT
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IRFI1310NPBF IRFI1310NPBF INFINEON TECHNOLOGIES irfi1310n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
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IRFB7437PBF IRFB7437PBF INFINEON TECHNOLOGIES IRFB7437PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Mounting: THT
Power dissipation: 230W
Gate charge: 150nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 250A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 2mΩ
Trade name: StrongIRFET
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IRFB52N15DPBF IRFB52N15DPBF INFINEON TECHNOLOGIES irfs52n15d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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IRFB7534PBF IRFB7534PBF INFINEON TECHNOLOGIES irfs7534pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 186nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
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IDP30E120XKSA1 IDP30E120XKSA1 INFINEON TECHNOLOGIES IDP30E120XKSA1.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; TO220-2; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO220-2
Features of semiconductor devices: fast switching
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
Mounting: THT
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IDP18E120XKSA1 IDP18E120XKSA1 INFINEON TECHNOLOGIES IDP18E120XKSA1.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 18A; TO220-2; tube
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
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IDV15E65D2XKSA1 IDV15E65D2XKSA1 INFINEON TECHNOLOGIES IDV15E65D2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; Ifsm: 100A; TO220FP-2; tube
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 100A
Kind of package: tube
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IDW15E65D2FKSA1 IDW15E65D2FKSA1 INFINEON TECHNOLOGIES IDW15E65D2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; Ifsm: 100A; TO247-3; tube
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 100A
Kind of package: tube
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IDP15E65D2XKSA1 IDP15E65D2XKSA1 INFINEON TECHNOLOGIES IDP15E65D2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; Ifsm: 100A; TO220-2; tube; 47ns
Mounting: THT
Max. forward impulse current: 100A
Features of semiconductor devices: fast switching
Max. off-state voltage: 650V
Load current: 15A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220-2
Type of diode: rectifying
Reverse recovery time: 47ns
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IDP40E65D2XKSA1 IDP40E65D2XKSA1 INFINEON TECHNOLOGIES IDP40E65D2XKSA1.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 40A; Ifsm: 250A; TO220-2; tube; 36ns
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Kind of package: tube
Reverse recovery time: 36ns
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IDV08E65D2XKSA1 IDV08E65D2XKSA1 INFINEON TECHNOLOGIES IDV08E65D2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 8A; Ifsm: 60A; TO220FP-2; tube; 40ns
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 40ns
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BAS140WE6327HTSA1 BAS140WE6327HTSA1 INFINEON TECHNOLOGIES BAS140WE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW
Mounting: SMD
Max. forward impulse current: 0.2A
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Case: SOD323
Type of diode: Schottky switching
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XMC1100T016F0064ABXUMA1 XMC1300-AB-EN.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 16kB SRAM; 64kB FLASH
Interface: GPIO
Case: PG-TSSOP-16
Operating temperature: -40...85°C
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 6
Number of inputs/outputs: 14
Produkt ist nicht verfügbar
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XMC1100T016X0032ABXUMA1 XMC1300-AB-EN.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 16kB SRAM; 32kB FLASH
Interface: GPIO
Case: PG-TSSOP-16
Operating temperature: -40...105°C
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 6
Number of inputs/outputs: 14
Produkt ist nicht verfügbar
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XMC1100T016X0064ABXUMA1 XMC1300-AB-EN.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 16kB SRAM; 64kB FLASH
Interface: GPIO
Case: PG-TSSOP-16
Operating temperature: -40...105°C
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 6
Number of inputs/outputs: 14
Produkt ist nicht verfügbar
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XMC1100T038F0016ABXUMA1 XMC1300-AB-EN.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM
Type of integrated circuit: ARM microcontroller
Memory: 16kB FLASH; 16kB SRAM
Interface: GPIO
Case: PG-TSSOP-38
Operating temperature: -40...85°C
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of inputs/outputs: 34
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XMC1100T038X0064ABXUMA1 XMC1300-AB-EN.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 16kB SRAM; 64kB FLASH
Interface: GPIO
Case: PG-TSSOP-38
Operating temperature: -40...105°C
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of inputs/outputs: 34
Produkt ist nicht verfügbar
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XMC1201Q040F0200ABXUMA1 XMC1300-AB-EN.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 16kB SRAM; 200kB FLASH
Interface: GPIO
Case: PG-VQFN-40
Operating temperature: -40...85°C
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Kind of architecture: Cortex M0
Kind of core: 32-bit
Number of 16bit timers: 4
Family: XMC1200
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of inputs/outputs: 34
Produkt ist nicht verfügbar
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SMBTA06E6327 SMBTA06E6327.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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SMBTA06E6327HTSA1 smbta06_mmbta06.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca3890115478ecca71a2d
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AUIRFR2905ZTRL auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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ESD121B1W0201E6327XTSA1 Infineon-ESD121-B1-W0201-DataSheet-v01_01-EN.pdf?fileId=5546d46272aa54c00172cccef3990175
Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
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BAT165E6327HTSA1 BAT165E6327HTSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.75A
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.75A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
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BAT165E6874HTMA1 bat165series.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a304313d846880113df01f69804d6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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BSZ0503NSIATMA1 Infineon-BSZ0503NSI-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f3c2d37301ce7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 82A; 36W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 82A
Power dissipation: 36W
Case: PG-TDSON-8
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKW40N65ET7XKSA1 Infineon-IKW40N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351bec5a657f5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 76A; 230.8W; TO247-3; 1.05mJ
Type of transistor: IGBT
Technology: Field Stop; Trench
Collector-emitter voltage: 650V
Collector current: 76A
Power dissipation: 230.8W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Turn-on switching energy: 1.05mJ
Gate charge: 235nC
Produkt ist nicht verfügbar
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IKW40N65RH5XKSA1 Infineon-IKW40N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc16a3d630f8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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AIGB40N65F5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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AIGB40N65H5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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AIKB40N65DF5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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AIKB40N65DH5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IKFW40N65DH5XKSA1 Infineon-IKFW40N65DH5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d972f3891f03
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
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IKFW40N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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IPD50R500CEAUMA1 IPD50R500CE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: CoolMOS™ CE
Drain current: 4.8A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Pulsed drain current: 24A
Power dissipation: 57W
Gate charge: 18.7nC
Produkt ist nicht verfügbar
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IRFS3004TRL7PP irfs3004-7ppbf.pdf?fileId=5546d462533600a40153563631632147
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 400A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 400A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKW30N65H5XKSA1 ikw30n65h5.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Pulsed collector current: 90A
Turn-on time: 31ns
Turn-off time: 209ns
Gate-emitter voltage: ±20V
Collector current: 35A
Manufacturer series: H5
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
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IKW30N65EL5XKSA1 IKW30N65EL5.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Pulsed collector current: 120A
Turn-on time: 44ns
Turn-off time: 359ns
Gate-emitter voltage: ±20V
Collector current: 62A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
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IKW30N65WR5XKSA1 IKW30N65WR5.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Pulsed collector current: 90A
Turn-on time: 51ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
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CY8C4013SXI-411T Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BSP50H6327XTSA1 BSP50H6327XTSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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IQE006NE2LM5ATMA1 Infineon-IQE006NE2LM5-DataSheet-v02_01-EN.pdf?fileId=5546d4626f229553016f8b08cb821aa4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IQE006NE2LM5CGATMA1 Infineon-IQE006NE2LM5CG-DataSheet-v02_01-EN.pdf?fileId=5546d4626f229553016f8b11f53c1aa7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IQE006NE2LM5SCATMA1 Infineon-IQE006NE2LM5SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181c84bdaa41805
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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IKN01N60RC2ATMA1 infineon-ikn01n60rc2-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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FM25V20A-DGQ FM25V20A-DGQ-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Interface: SPI
Clock frequency: 40MHz
Memory: 2Mb FRAM
Kind of interface: serial
Memory organisation: 256kx8bit
Case: DFN8
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM25V20A-DG FM25V20A-DG-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Interface: SPI
Clock frequency: 40MHz
Memory: 2Mb FRAM
Kind of interface: serial
Memory organisation: 256kx8bit
Case: DFN8
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM25V20A-G FM25V20A-DG-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 2Mb FRAM
Interface: SPI
Memory organisation: 256kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
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FM25V20A-PG FM25V20A_PDIP_RevE_2-9-24.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
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FM25V01A-G FM25V01A-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 128kb FRAM
Interface: SPI
Memory organisation: 16kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
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FM25V02A-DGQ FM25V02A-DGQ-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
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FM25V10-DGTR Infineon-FM25V10_1_Mbit_128K_X_8_Serial_SPI_F_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f1be7c4f91516
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IRFB7734PBF IRFB7734PBF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 183A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IMT65R022M1HXUMA1 Infineon-IMT65R022M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f4b265b71bb
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IPW65R022CFD7AXKSA1 Infineon-IPW65R022CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46279cccfdb0179ccdff29c02d5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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IPA60R280P7SXKSA1 infineon-ipa60r280p7s-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 24W; TO220FP
Type of transistor: N-MOSFET
On-state resistance: 214mΩ
Mounting: THT
Power dissipation: 24W
Gate charge: 18nC
Polarisation: unipolar
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 600V
Case: TO220FP
Produkt ist nicht verfügbar
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IPP80R450P7XKSA1 Infineon-IPP80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e459bf0619fd
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; Idm: 29A; 73W; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 29A
Version: ESD
auf Bestellung 27 Stücke:
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IAUC70N08S5N074ATMA1 Infineon-IAUC70N08S5N074-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a531f6aa0013
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Drain current: 47A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-TDSON-8
On-state resistance: 7.4mΩ
Pulsed drain current: 280A
Power dissipation: 83W
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPTC011N08NM5ATMA1 Infineon-IPTC011N08NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183e988ff2f7436
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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IPTG011N08NM5ATMA1 Infineon-IPTG011N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa3f5c9e7d54
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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IDH04SG60CXKSA2 IDH04SG60C_rev2.2_.pdf?folderId=db3a30431d8a6b3c011dbeca72db281a&fileId=db3a30431f848401011ff4cbbf635316
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; PG-TO220-2; Ir: 25uA
Max. forward impulse current: 18A
Max. forward voltage: 2.3V
Technology: CoolSiC™; SiC
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Leakage current: 25µA
Case: PG-TO220-2
Type of diode: Schottky rectifying
Mounting: THT
auf Bestellung 132 Stücke:
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IRFI1310NPBF irfi1310n.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 76 Stücke:
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IRFB7437PBF IRFB7437PBF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Mounting: THT
Power dissipation: 230W
Gate charge: 150nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 250A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 2mΩ
Trade name: StrongIRFET
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IRFB52N15DPBF irfs52n15d.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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IRFB7534PBF irfs7534pbf.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 186nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
auf Bestellung 585 Stücke:
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IDP30E120XKSA1 IDP30E120XKSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; TO220-2; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO220-2
Features of semiconductor devices: fast switching
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
Mounting: THT
auf Bestellung 538 Stücke:
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IDP18E120XKSA1 IDP18E120XKSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 18A; TO220-2; tube
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
auf Bestellung 731 Stücke:
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IDV15E65D2XKSA1 IDV15E65D2.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; Ifsm: 100A; TO220FP-2; tube
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 100A
Kind of package: tube
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IDW15E65D2FKSA1 IDW15E65D2.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; Ifsm: 100A; TO247-3; tube
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 100A
Kind of package: tube
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IDP15E65D2XKSA1 IDP15E65D2.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; Ifsm: 100A; TO220-2; tube; 47ns
Mounting: THT
Max. forward impulse current: 100A
Features of semiconductor devices: fast switching
Max. off-state voltage: 650V
Load current: 15A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220-2
Type of diode: rectifying
Reverse recovery time: 47ns
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IDP40E65D2XKSA1 IDP40E65D2XKSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 40A; Ifsm: 250A; TO220-2; tube; 36ns
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Kind of package: tube
Reverse recovery time: 36ns
auf Bestellung 72 Stücke:
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IDV08E65D2XKSA1 IDV08E65D2.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 8A; Ifsm: 60A; TO220FP-2; tube; 40ns
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 40ns
auf Bestellung 195 Stücke:
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BAS140WE6327HTSA1 BAS140WE6327HTSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW
Mounting: SMD
Max. forward impulse current: 0.2A
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Case: SOD323
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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