Produkte > SCT
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| SCT3017ALHRC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 118A Automotive 3-Pin(3+Tab) TO-247N Tube | auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3022ALGC11 | Rohm Semiconductor | Description: SICFET N-CH 650V 93A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V Power Dissipation (Max): 339W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500 | auf Bestellung 1298 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3022ALGC11 | ROHM Semiconductor | SiC MOSFETs N-Ch 650V SiC 93A 22mOhm TrenchMOS | auf Bestellung 275 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3022ALHRC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube | auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3022ALHRC11 | Rohm Semiconductor | Description: SICFET N-CH 650V 93A TO247N Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: TO-247N Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Power Dissipation (Max): 339W Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V Current - Continuous Drain (Id) @ 25°C: 93A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube | auf Bestellung 2246 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3022ALHRC11 | ROHM Semiconductor | SiC MOSFETs 650V 93A 339W SIC 22mOhm TO-247N | Produkt ist nicht verfügbar | Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SCT3022ALHRC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube | auf Bestellung 188 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3022ALHRC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube | auf Bestellung 219 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3022ALHRC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube | auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3022KLGC11 | Rohm Semiconductor | Description: SICFET N-CH 1200V 95A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V Power Dissipation (Max): 427W Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2879 pF @ 800 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800 | auf Bestellung 198 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3022KLGC11 | ROHM Semiconductor | SiC MOSFETs Nch 1200V 95A SiC TO-247N | auf Bestellung 267 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3022KLGC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 1.2KV 95A 3-Pin(3+Tab) TO-247N Tube | auf Bestellung 112 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3022KLGC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 1.2KV 95A 3-Pin(3+Tab) TO-247N Tube | auf Bestellung 405 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3022KLGC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 1.2KV 95A 3-Pin(3+Tab) TO-247N Tube | auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3022KLHRC11 | ROHM | Description: ROHM - SCT3022KLHRC11 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 95 A, 1.2 kV, 0.022 ohm, TO-247N tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 95A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 427W Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.022ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3022KLHRC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 1.2KV 95A Automotive 3-Pin(3+Tab) TO-247N Tube | auf Bestellung 383 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3022KLHRC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 1.2KV 95A Automotive 3-Pin(3+Tab) TO-247N Tube | auf Bestellung 447 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3022KLHRC11 | Rohm Semiconductor | Description: SICFET N-CH 1200V 95A TO247N Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2879 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: TO-247N Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Power Dissipation (Max): 427W Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube | auf Bestellung 1127 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3022KLHRC11 | ROHM Semiconductor | SiC MOSFETs 1200V 95A 427W SIC 22mOhm TO-247N | auf Bestellung 199 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3022KLHRC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 1.2KV 95A Automotive 3-Pin(3+Tab) TO-247N Tube | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3030ALGC11 | ROHM SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Kind of package: tube Case: TO247 Polarisation: unipolar Gate-source voltage: -4...22V Gate charge: 104nC On-state resistance: 39mΩ Type of transistor: N-MOSFET Kind of channel: enhancement Drain current: 70A Pulsed drain current: 175A Power dissipation: 262W Mounting: THT Drain-source voltage: 650V Technology: SiC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SCT3030ALGC11 | Rohm Semiconductor | Description: SICFET N-CH 650V 70A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Power Dissipation (Max): 262W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500 | auf Bestellung 8797 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3030ALGC11 | ROHM Semiconductor | SiC MOSFETs N-Ch 650V SiC 70A 30mOhm TrenchMOS | auf Bestellung 110 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3030ALGC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 70A 3-Pin(3+Tab) TO-247N Tube | auf Bestellung 257 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3030ALGC11 | ROHM | Description: ROHM - SCT3030ALGC11 - Leistungs-MOSFET, Siliziumkarbid, n-Kanal, 70A, 650V, 0.03 Ohm, 18V, 5.6V tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins Verlustleistung: 262W SVHC: Lead (23-Jan-2024) Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 18V Drain-Source-Durchgangswiderstand: 0.03ohm | auf Bestellung 422 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3030ALGC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 70A 3-Pin(3+Tab) TO-247N Tube | auf Bestellung 1118 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3030ALGC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 70A 3-Pin(3+Tab) TO-247N Tube | auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3030ALHRC11 | ROHM | Description: ROHM - SCT3030ALHRC11 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 70 A, 650 V, 0.03 ohm, TO-247N Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650 Dauer-Drainstrom Id: 70 Rds(on)-Messspannung Vgs: 18 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 262 Bauform - Transistor: TO-247N Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal MOSFET-Konfiguration: Eins Betriebswiderstand, Rds(on): 0.03 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 5.6 SVHC: Lead (08-Jul-2021) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SCT3030ALHRC11 | ROHM SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Kind of package: tube Case: TO247 Polarisation: unipolar Gate-source voltage: -4...22V Gate charge: 104nC On-state resistance: 39mΩ Type of transistor: N-MOSFET Kind of channel: enhancement Drain current: 70A Pulsed drain current: 175A Power dissipation: 262W Mounting: THT Drain-source voltage: 650V Technology: SiC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SCT3030ALHRC11 | Rohm Semiconductor | Description: SICFET N-CH 650V 70A TO247N Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: TO-247N Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Power Dissipation (Max): 262W Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube | auf Bestellung 445 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3030ARC14 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 70A 4-Pin(4+Tab) TO-247 Tube | auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3030ARC14 | ROHM SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Kind of package: tube Case: TO247-4 Polarisation: unipolar Gate-source voltage: -4...22V Gate charge: 104nC On-state resistance: 39mΩ Type of transistor: N-MOSFET Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Drain current: 70A Pulsed drain current: 175A Power dissipation: 262W Mounting: THT Drain-source voltage: 650V Technology: SiC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SCT3030ARC14 | Rohm Semiconductor | Description: SICFET N-CH 650V 70A TO247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Power Dissipation (Max): 262W Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500 | auf Bestellung 123 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3030ARC14 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 70A 4-Pin(4+Tab) TO-247 Tube | auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3030ARC14 | ROHM Semiconductor | SiC MOSFETs TO247 650V 70A N-CH SIC | auf Bestellung 195 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3030ARC14 | ROHM | Description: ROHM - SCT3030ARC14 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 70 A, 650 V, 0.03 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 262W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3030ARC15 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 70A 4-Pin(4+Tab) TO-247 Tube | auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3030ARC15 | ROHM Semiconductor | SiC MOSFETs TO247 650V 70A N-CH SIC | Produkt ist nicht verfügbar | Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SCT3030ARC15 | ROHM | Description: ROHM - SCT3030ARC15 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 70 A, 650 V, 0.03 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 262W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: To Be Advised | auf Bestellung 81 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3030ARC15 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 70A 4-Pin(4+Tab) TO-247 Tube | auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3030ARC15 | Rohm Semiconductor | Description: 650V, 70A, 4-PIN THD, TRENCH-STR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Power Dissipation (Max): 262W Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) | auf Bestellung 422 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3030ARHRC15 | ROHM Semiconductor | SiC MOSFETs Transistor SiC MOSFET 650V 30m 3rd Gen TO-247-4L | auf Bestellung 745 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3030ARHRC15 | ROHM | Description: ROHM - SCT3030ARHRC15 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 70 A, 650 V, 0.03 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 262W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: To Be Advised | auf Bestellung 331 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3030ARHRC15 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 70A Automotive AEC-Q101 4-Pin(4+Tab) TO-247 T/R | auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3030ARHRC15 | Rohm Semiconductor | Description: 650V, 70A, 4-PIN THD, TRENCH-STR Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Grade: Automotive Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Power Dissipation (Max): 262W Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube | auf Bestellung 438 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3030ARHRC15 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 70A Automotive AEC-Q101 4-Pin(4+Tab) TO-247 T/R | auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3030AW7TL | Rohm Semiconductor | Description: SICFET N-CH 650V 70A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Power Dissipation (Max): 267W Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Supplier Device Package: TO-263-7 Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SCT3030AW7TL | ROHM Semiconductor | SiC MOSFETs TO263 650V 70A N-CH SIC | auf Bestellung 978 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3030AW7TL | Rohm Semiconductor | Description: SICFET N-CH 650V 70A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Power Dissipation (Max): 267W Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Supplier Device Package: TO-263-7 Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V | auf Bestellung 432 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3030AW7TL | ROHM SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W Case: TO263-7 Mounting: SMD Pulsed drain current: 175A Power dissipation: 267W Gate charge: 104nC Polarisation: unipolar Technology: SiC Drain current: 70A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: -4...22V Kind of package: reel; tape On-state resistance: 39mΩ | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SCT3030KLGC11 | ROHM Semiconductor | SiC MOSFETs N-Ch 1200V SiC 72A 30mOhm TrenchMOS | auf Bestellung 683 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3030KLGC11 | Rohm Semiconductor | Description: SICFET N-CH 1200V 72A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Power Dissipation (Max): 339W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2222 pF @ 800 V | auf Bestellung 265 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3030KLGC11 | ROHM SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W Kind of package: tube Case: TO247 Polarisation: unipolar Gate-source voltage: -4...22V Gate charge: 131nC On-state resistance: 39mΩ Type of transistor: N-MOSFET Kind of channel: enhancement Drain current: 72A Pulsed drain current: 180A Power dissipation: 339W Mounting: THT Drain-source voltage: 1.2kV Technology: SiC | Produkt ist nicht verfügbar | Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SCT3030KLGC11 | ROHM | Description: ROHM - SCT3030KLGC11 - Leistungs-MOSFET, Siliziumkarbid, n-Kanal, 72A, 1.2kV, 0.03 Ohm, 18V, 5.6V tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 72A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 339W Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: Lead (17-Jan-2023) | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SCT3030KLHRC11 | ROHM SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W Kind of package: tube Case: TO247 Polarisation: unipolar Gate-source voltage: -4...22V Gate charge: 131nC On-state resistance: 39mΩ Type of transistor: N-MOSFET Kind of channel: enhancement Drain current: 72A Pulsed drain current: 180A Power dissipation: 339W Mounting: THT Drain-source voltage: 1.2kV Technology: SiC | Produkt ist nicht verfügbar | Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SCT3030KLHRC11 | ROHM | Description: ROHM - SCT3030KLHRC11 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 72 A, 1.2 kV, 0.03 ohm, TO-247N tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 72A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 339W Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 339W Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.03ohm Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: Lead (17-Jan-2023) | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SCT3030KLHRC11 | ROHM Semiconductor | SiC MOSFETs 1200V 72A 339W SIC 30mOhm TO-247N | auf Bestellung 348 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3030KLHRC11 | Rohm Semiconductor | Description: SICFET N-CH 1200V 72A TO247N Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2222 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: TO-247N Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Power Dissipation (Max): 339W Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube | auf Bestellung 579 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3040KLGC11 | Rohm | MOSFET NCH 1.2KV 55A TO247N Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SCT3040KLGC11 | ROHM Semiconductor | SiC MOSFETs N-Ch 1200V SiC 55A 40mOhm TrenchMOS | auf Bestellung 454 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3040KLGC11 | Rohm Semiconductor | Description: SICFET N-CH 1200V 55A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Power Dissipation (Max): 262W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 10mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 800 | auf Bestellung 459 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3040KLGC11 | ROHM | Description: ROHM - SCT3040KLGC11 - Leistungs-MOSFET, Siliziumkarbid, n-Kanal, 55A, 1.2kV, 0.04 Ohm, 18V, 5.6V tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 55A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 262W Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.04ohm SVHC: Lead (23-Jan-2024) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SCT3040KLHRC11 | ROHM Semiconductor | SiC MOSFETs 1200V 55A 262W SIC 40mOhm TO-247N | auf Bestellung 460 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3040KLHRC11 | Rohm Semiconductor | Description: SICFET N-CH 1200V 55A TO247N Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: TO-247N Vgs(th) (Max) @ Id: 5.6V @ 10mA Power Dissipation (Max): 262W Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Current - Continuous Drain (Id) @ 25°C: 55A (Ta) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube | auf Bestellung 886 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3040KRC14 | ROHM Semiconductor | SiC MOSFETs TO247 1.2KV 55A N-CH SIC | auf Bestellung 61 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3040KRC14 | Rohm Semiconductor | Description: SICFET N-CH 1200V 55A TO247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Power Dissipation (Max): 262W Vgs(th) (Max) @ Id: 5.6V @ 10mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V | auf Bestellung 801 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3040KRC15 | ROHM Semiconductor | SiC MOSFETs TO247 1.2KV 55A N-CH SIC | auf Bestellung 721 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3040KRC15 | Rohm Semiconductor | Description: 1200V, 55A, 4-PIN THD, TRENCH-ST Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tj) Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Power Dissipation (Max): 262W Vgs(th) (Max) @ Id: 5.6V @ 10mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V | auf Bestellung 288 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3040KRC15 | ROHM | Description: ROHM - SCT3040KRC15 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 55 A, 1.2 kV, 0.04 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 55A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 262W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.04ohm SVHC: To Be Advised | auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3040KRHRC15 | ROHM | Description: ROHM - SCT3040KRHRC15 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 55 A, 1.2 kV, 0.04 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 55A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 262W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.04ohm SVHC: To Be Advised | auf Bestellung 424 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3040KRHRC15 | Rohm Semiconductor | Trans MOSFET N-CH SiC 1.2KV 55A Automotive AEC-Q101 4-Pin(4+Tab) TO-247 T/R | auf Bestellung 395 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3040KRHRC15 | Rohm Semiconductor | Trans MOSFET N-CH SiC 1.2KV 55A Automotive AEC-Q101 4-Pin(4+Tab) TO-247 T/R | auf Bestellung 410 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3040KRHRC15 | ROHM Semiconductor | SiC MOSFETs Transistor SiC MOSFET 1200V 40mohm 3rd Gen TO-247-4L | auf Bestellung 774 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3040KRHRC15 | Rohm Semiconductor | Description: 1200V, 55A, 4-PIN THD, TRENCH-ST Packaging: Tube Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Grade: Automotive Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 5.6V @ 10mA Power Dissipation (Max): 262W Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 | auf Bestellung 435 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3040KW7TL | Rohm Semiconductor | Description: SICFET N-CH 1200V 56A TO263-7 Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -4V Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 5.6V @ 10mA Power Dissipation (Max): 267W Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) | auf Bestellung 1237 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3040KW7TL | ROHM Semiconductor | SiC MOSFETs Transistor SiC MOSFET 1200V 40m 3rd Gen TO-263-7L | auf Bestellung 496 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3040KW7TL | Rohm Semiconductor | Description: SICFET N-CH 1200V 56A TO263-7 Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -4V Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 5.6V @ 10mA Power Dissipation (Max): 267W Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SCT3040KW7TL | ROHM SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 56A; Idm: 140A; 267W Case: TO263-7 Mounting: SMD Pulsed drain current: 140A Power dissipation: 267W Gate charge: 107nC Polarisation: unipolar Technology: SiC Drain current: 56A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -4...22V Kind of package: reel; tape On-state resistance: 52mΩ | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SCT3040KW7TL | ROHM | Description: ROHM - SCT3040KW7TL - Siliziumkarbid-MOSFET, Eins, n-Kanal, 56 A, 1.2 kV, 0.04 ohm, TO-263 (D2PAK) Drain-Source-Spannung Vds: 1.2 Dauer-Drainstrom Id: 56 Rds(on)-Messspannung Vgs: 18 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 267 Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7 Produktpalette: - Wandlerpolarität: n-Kanal MOSFET-Konfiguration: Eins Betriebswiderstand, Rds(on): 0.04 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 5.6 SVHC: Lead (10-Jun-2022) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SCT3060ALGC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 39A 3-Pin(3+Tab) TO-247N Tube | auf Bestellung 220 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3060ALGC11 | ROHM SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; 165W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 39A Power dissipation: 165W Case: TO247 On-state resistance: 60mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SCT3060ALGC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 39A 3-Pin(3+Tab) TO-247N Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SCT3060ALGC11 | ROHM | Description: ROHM - SCT3060ALGC11 - Leistungs-MOSFET, Siliziumkarbid, n-Kanal, 39A, 650V, 0.06 Ohm, 18V, 5.6V tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 39A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins Verlustleistung: 165W SVHC: Lead (23-Jan-2024) Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 18V Drain-Source-Durchgangswiderstand: 0.06ohm | auf Bestellung 412 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3060ALGC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 39A 3-Pin(3+Tab) TO-247N Tube | auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3060ALGC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 39A 3-Pin(3+Tab) TO-247N Tube | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SCT3060ALGC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 39A 3-Pin(3+Tab) TO-247N Tube | auf Bestellung 853 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3060ALGC11 | Rohm Semiconductor | Description: SICFET N-CH 650V 39A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 6.67mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500 | auf Bestellung 603 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3060ALGC11 | ROHM - Japan | SiC-N-Ch 650V 39A 165W 0,078R TO247 SCT3060ALGC11 : Rohm SCT3060ALGC11 TSCT3060algc11 Anzahl je Verpackung: 2 Stücke | auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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| SCT3060ALGC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 39A 3-Pin(3+Tab) TO-247N Tube | auf Bestellung 853 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3060ALGC11 | ROHM Semiconductor | SiC MOSFETs N-Ch 650V SiC 39A 60mOhm TrenchMOS | auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3060ALHRC11 | Rohm Semiconductor | Description: SICFET N-CH 650V 39A TO247N Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: TO-247N Vgs(th) (Max) @ Id: 5.6V @ 6.67mA Power Dissipation (Max): 165W Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube | auf Bestellung 440 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3060ALHRC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 39A 3-Pin(3+Tab) TO-247N Tube Automotive AEC-Q101 | auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3060ALHRC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 39A 3-Pin(3+Tab) TO-247N Tube Automotive AEC-Q101 | auf Bestellung 390 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3060ALHRC11 | ROHM Semiconductor | SiC MOSFETs 650V 39A 165W SIC 60mOhm TO-247N | auf Bestellung 428 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3060ALHRC11 | ROHM SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 97A; 165W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 39A Pulsed drain current: 97A Power dissipation: 165W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 78mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SCT3060ALHRC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 39A 3-Pin(3+Tab) TO-247N Tube Automotive AEC-Q101 | auf Bestellung 390 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3060ALHRC11 | ROHM | Description: ROHM - SCT3060ALHRC11 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 39 A, 650 V, 0.06 ohm, TO-247N tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 39A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 165W Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 596 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3060ALHRC11 | Rohm Semiconductor | Trans MOSFET N-CH SiC 650V 39A 3-Pin(3+Tab) TO-247N Tube Automotive AEC-Q101 | auf Bestellung 186 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3060ARC14 | ROHM Semiconductor | SiC MOSFETs TO247 650V 39A N-CH SIC | auf Bestellung 704 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3060ARC14 | Rohm Semiconductor | Description: SICFET N-CH 650V 39A TO247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Power Dissipation (Max): 165W Vgs(th) (Max) @ Id: 5.6V @ 6.67mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V | auf Bestellung 334 Stücke: Lieferzeit 10-14 Tag (e) |
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