Produkte > IQD
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
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| IQD-DB1M-01A | IQRF TECH | Category: RF modules Description: Module: DALI Bridge; GFSK; 868MHz; DALI; -101dBm; 10dBm; 8.3/11.8mA Type of communications module: DALI Bridge Kind of modulation: GFSK Frequency: 868MHz Interface: DALI Receiver sensitivity: -101dBm Transmitter output power: 10dBm Dimensions: 88x38x22mm TX/RX supply current: 8.3/11.8mA Operating temperature: -10...60°C Range: 130m Communictions protocol: DALI Kind of connector: screw Components: DCTR-76D Kit contents: base board Anzahl je Verpackung: 1 Stücke | auf Bestellung 16 Stücke: Lieferzeit 7-14 Tag (e) |
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| IQD-DB1M-01A | IQRF TECH | Category: RF modules Description: Module: DALI Bridge; GFSK; 868MHz; DALI; -101dBm; 10dBm; 8.3/11.8mA Type of communications module: DALI Bridge Kind of modulation: GFSK Frequency: 868MHz Interface: DALI Receiver sensitivity: -101dBm Transmitter output power: 10dBm Dimensions: 88x38x22mm TX/RX supply current: 8.3/11.8mA Operating temperature: -10...60°C Range: 130m Communictions protocol: DALI Kind of connector: screw Components: DCTR-76D Kit contents: base board | auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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| IQD-GW-02 | IQRF TECH | Category: RF modules Description: Module: gateway; GFSK; 868MHz; Ethernet,USB; -101dBm; 10dBm Type of communications module: gateway Kind of modulation: GFSK Frequency: 868MHz Interface: Ethernet; USB Receiver sensitivity: -101dBm Transmitter output power: 10dBm Dimensions: 50x54x36mm Operating temperature: -10...40°C Range: 400m Kind of connector: RJ45; USB A; USB B micro Components: DCTR-76D Kit contents: base board Anzahl je Verpackung: 1 Stücke | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| IQD-GW-02 | IQRF TECH | Category: RF modules Description: Module: gateway; GFSK; 868MHz; Ethernet,USB; -101dBm; 10dBm Type of communications module: gateway Kind of modulation: GFSK Frequency: 868MHz Interface: Ethernet; USB Receiver sensitivity: -101dBm Transmitter output power: 10dBm Dimensions: 50x54x36mm Operating temperature: -10...40°C Range: 400m Kind of connector: RJ45; USB A; USB B micro Components: DCTR-76D Kit contents: base board | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| IQD005N04NM6ATMA1 | Infineon Technologies | N-channel Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IQD005N04NM6ATMA1 Produktcode: 198771 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
| IQD005N04NM6ATMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc) Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1.449mA Supplier Device Package: PG-TSON-8-U04 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V | auf Bestellung 5016 Stücke: Lieferzeit 21-28 Tag (e) |
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| IQD005N04NM6ATMA1 | Infineon Technologies | N-channel Power MOSFET | auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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| IQD005N04NM6ATMA1 | Infineon Technologies | N-channel Power MOSFET | auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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| IQD005N04NM6ATMA1 | Infineon Technologies | TRENCH <= 40V | Produkt ist nicht verfügbar | |||||||||||||||||
| IQD005N04NM6ATMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc) Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1.449mA Supplier Device Package: PG-TSON-8-U04 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IQD005N04NM6ATMA1 | Infineon Technologies | MOSFET TRENCH <= 40V | auf Bestellung 5000 Stücke: Lieferzeit 14-28 Tag (e) |
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| IQD005N04NM6CGATMA1 | Infineon Technologies | Description: OPTIMOS 6 POWER-TRANSISTOR Packaging: Tape & Reel (TR) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc) Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1.449mA Supplier Device Package: PG-TTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IQD005N04NM6CGATMA1 | INFINEON | Description: INFINEON - IQD005N04NM6CGATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 610 A, 420 µohm, TTFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 610A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 333W Bauform - Transistor: TTFN Anzahl der Pins: 9Pin(s) Produktpalette: OptiMOS 6 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 420µohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4960 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IQD005N04NM6CGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 58A 9-Pin TTFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IQD005N04NM6CGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 58A T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IQD005N04NM6CGATMA1 | Infineon Technologies | MOSFET TRENCH <= 40V | auf Bestellung 4825 Stücke: Lieferzeit 14-28 Tag (e) |
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| IQD005N04NM6CGATMA1 | Infineon Technologies | Description: OPTIMOS 6 POWER-TRANSISTOR Packaging: Cut Tape (CT) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc) Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1.449mA Supplier Device Package: PG-TTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V | auf Bestellung 4930 Stücke: Lieferzeit 21-28 Tag (e) |
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| IQD005N04NM6CGATMA1 | INFINEON | Description: INFINEON - IQD005N04NM6CGATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 610 A, 420 µohm, TTFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 610A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 333W Bauform - Transistor: TTFN Anzahl der Pins: 9Pin(s) Produktpalette: OptiMOS 6 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 420µohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4960 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IQD005N04NM6CGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 58A 9-Pin TTFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IQD009N06NM5ATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | auf Bestellung 4990 Stücke: Lieferzeit 14-28 Tag (e) |
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| IQD009N06NM5ATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 163µA Supplier Device Package: PG-TSON-8-U04 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IQD009N06NM5ATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 163µA Supplier Device Package: PG-TSON-8-U04 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V | auf Bestellung 4988 Stücke: Lieferzeit 21-28 Tag (e) |
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| IQD009N06NM5CGATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 42A T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IQD009N06NM5CGATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | auf Bestellung 4915 Stücke: Lieferzeit 14-28 Tag (e) |
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| IQD016N08NM5ATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc) Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 159µA Supplier Device Package: PG-TSON-8-U04 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IQD016N08NM5ATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | auf Bestellung 5000 Stücke: Lieferzeit 154-168 Tag (e) |
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| IQD016N08NM5ATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc) Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 159µA Supplier Device Package: PG-TSON-8-U04 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IQD016N08NM5ATMA1 | Infineon Technologies | N-channel Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IQD016N08NM5CGATMA1 | Infineon Technologies | Description: OPTIMOS 6 POWER-TRANSISTOR Packaging: Cut Tape (CT) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc) Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 159µA Supplier Device Package: PG-TTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IQD016N08NM5CGATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 31A 9-Pin TTFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IQD016N08NM5CGATMA1 | Infineon Technologies | Description: OPTIMOS 6 POWER-TRANSISTOR Packaging: Tape & Reel (TR) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc) Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 159µA Supplier Device Package: PG-TTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IQD016N08NM5CGATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | auf Bestellung 2622 Stücke: Lieferzeit 14-28 Tag (e) |
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| IQD020N10NM5ATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc) Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 159µA Supplier Device Package: PG-TSON-8-U04 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IQD020N10NM5ATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | auf Bestellung 5000 Stücke: Lieferzeit 14-28 Tag (e) |
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| IQD020N10NM5ATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc) Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 159µA Supplier Device Package: PG-TSON-8-U04 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IQD020N10NM5CGATMA1 | Infineon Technologies | Description: OPTIMOS 6 POWER-TRANSISTOR Packaging: Tape & Reel (TR) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 273A (Tc) Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 159µA Supplier Device Package: PG-TTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IQD020N10NM5CGATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | auf Bestellung 4899 Stücke: Lieferzeit 14-28 Tag (e) |
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| IQD020N10NM5CGATMA1 | INFINEON | Description: INFINEON - IQD020N10NM5CGATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 273 A, 0.0018 ohm, TTFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 273A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 333W Bauform - Transistor: TTFN Anzahl der Pins: 9Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0018ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IQD020N10NM5CGATMA1 | Infineon Technologies | Description: OPTIMOS 6 POWER-TRANSISTOR Packaging: Cut Tape (CT) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 273A (Tc) Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 159µA Supplier Device Package: PG-TTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IQD020N10NM5CGATMA1 | INFINEON | Description: INFINEON - IQD020N10NM5CGATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 273 A, 0.0018 ohm, TTFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 273A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 333W Bauform - Transistor: TTFN Anzahl der Pins: 9Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0018ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IQD063N15NM5ATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc) Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 159µA Supplier Device Package: PG-TSON-8-U04 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IQD063N15NM5ATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | auf Bestellung 4938 Stücke: Lieferzeit 14-28 Tag (e) |
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| IQD063N15NM5ATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc) Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 159µA Supplier Device Package: PG-TSON-8-U04 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IQD063N15NM5ATMA1 | Infineon Technologies | N-channel Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
| IQD063N15NM5CGATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | auf Bestellung 4331 Stücke: Lieferzeit 14-28 Tag (e) |
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| IQD063N15NM5CGATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc) Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 159µA Supplier Device Package: PG-TTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IQD063N15NM5CGATMA1 | Infineon Technologies | TRENCH >=100V | Produkt ist nicht verfügbar | |||||||||||||||||
| IQD063N15NM5CGATMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc) Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 159µA Supplier Device Package: PG-TTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IQDH29NE2LM5ATMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc) Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.448mA Supplier Device Package: PG-TSON-8-U04 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IQDH29NE2LM5ATMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc) Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.448mA Supplier Device Package: PG-TSON-8-U04 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IQDH29NE2LM5ATMA1 | Infineon Technologies | MOSFET TRENCH <= 40V | auf Bestellung 4756 Stücke: Lieferzeit 14-28 Tag (e) |
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| IQDH29NE2LM5CGATMA1 | Infineon Technologies | Description: OPTIMOS 6 POWER-TRANSISTOR Packaging: Cut Tape (CT) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc) Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.448mA Supplier Device Package: PG-TTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IQDH29NE2LM5CGATMA1 | Infineon Technologies | MOSFET | auf Bestellung 3978 Stücke: Lieferzeit 14-28 Tag (e) |
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| IQDH29NE2LM5CGATMA1 | Infineon Technologies | Description: OPTIMOS 6 POWER-TRANSISTOR Packaging: Tape & Reel (TR) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc) Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.448mA Supplier Device Package: PG-TTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IQDH35N03LM5ATMA1 | Infineon Technologies | MOSFET TRENCH <= 40V | auf Bestellung 4986 Stücke: Lieferzeit 14-28 Tag (e) |
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| IQDH35N03LM5ATMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc) Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.46mA Supplier Device Package: PG-TSON-8-U04 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 262 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IQDH35N03LM5ATMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc) Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.46mA Supplier Device Package: PG-TSON-8-U04 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 262 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IQDH35N03LM5CGATMA1 | Infineon Technologies | Trans MOSFET N-CH 30V 66A T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IQDH35N03LM5CGATMA1 | INFINEON | Description: INFINEON - IQDH35N03LM5CGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 700 A, 310 µohm, TTFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 700A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 278W Bauform - Transistor: TTFN Anzahl der Pins: 9Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 310µohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IQDH35N03LM5CGATMA1 | Infineon Technologies | Description: OPTIMOS 6 POWER-TRANSISTOR Packaging: Tape & Reel (TR) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc) Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.46mA Supplier Device Package: PG-TTFN-9-U02 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IQDH35N03LM5CGATMA1 | INFINEON | Description: INFINEON - IQDH35N03LM5CGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 700 A, 310 µohm, TTFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 700A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 278W Bauform - Transistor: TTFN Anzahl der Pins: 9Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 310µohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IQDH35N03LM5CGATMA1 | Infineon Technologies | MOSFET | auf Bestellung 4835 Stücke: Lieferzeit 14-28 Tag (e) |
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| IQDH35N03LM5CGATMA1 | Infineon Technologies | Description: OPTIMOS 6 POWER-TRANSISTOR Packaging: Cut Tape (CT) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc) Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.46mA Supplier Device Package: PG-TTFN-9-U02 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IQDH45N04LM6ATMA1 | Infineon Technologies | MOSFET TRENCH <= 40V | auf Bestellung 4958 Stücke: Lieferzeit 14-28 Tag (e) |
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| IQDH45N04LM6ATMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1.449mA Supplier Device Package: PG-TSON-8-U04 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IQDH45N04LM6ATMA1 | Infineon Technologies | TRENCH <= 40V | Produkt ist nicht verfügbar | |||||||||||||||||
| IQDH45N04LM6ATMA1 | Infineon Technologies | Description: TRENCH <= 40V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1.449mA Supplier Device Package: PG-TSON-8-U04 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V | auf Bestellung 4965 Stücke: Lieferzeit 21-28 Tag (e) |
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| IQDH45N04LM6CGATMA1 | Infineon Technologies | Description: OPTIMOS 6 POWER-TRANSISTOR Packaging: Cut Tape (CT) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1.449mA Supplier Device Package: PG-TTFN-9-U02 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V | auf Bestellung 8036 Stücke: Lieferzeit 21-28 Tag (e) |
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| IQDH45N04LM6CGATMA1 | INFINEON | Description: INFINEON - IQDH45N04LM6CGATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 637 A, 400 µohm, TTFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 637A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.3V euEccn: NLR Verlustleistung: 333W Bauform - Transistor: TTFN Anzahl der Pins: 9Pin(s) Produktpalette: OptiMOS 6 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 400µohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4970 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IQDH45N04LM6CGATMA1 | Infineon Technologies | Description: OPTIMOS 6 POWER-TRANSISTOR Packaging: Tape & Reel (TR) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1.449mA Supplier Device Package: PG-TTFN-9-U02 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IQDH45N04LM6CGATMA1 | Infineon Technologies | IQDH45N04LM6CGATMA1 | Produkt ist nicht verfügbar | |||||||||||||||||
| IQDH45N04LM6CGATMA1 | INFINEON | Description: INFINEON - IQDH45N04LM6CGATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 637 A, 400 µohm, TTFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 637A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.3V euEccn: NLR Verlustleistung: 333W Bauform - Transistor: TTFN Anzahl der Pins: 9Pin(s) Produktpalette: OptiMOS 6 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 400µohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4970 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IQDH45N04LM6CGATMA1 | Infineon Technologies | MOSFET | auf Bestellung 2313 Stücke: Lieferzeit 14-28 Tag (e) |
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| IQDH88N06LM5ATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc) Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 163µA Supplier Device Package: PG-TSON-8-U04 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V | auf Bestellung 4996 Stücke: Lieferzeit 21-28 Tag (e) |
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| IQDH88N06LM5ATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | auf Bestellung 4828 Stücke: Lieferzeit 14-28 Tag (e) |
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| IQDH88N06LM5ATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc) Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 163µA Supplier Device Package: PG-TSON-8-U04 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V | auf Bestellung 4996 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IQDH88N06LM5CGATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | auf Bestellung 1488 Stücke: Lieferzeit 14-28 Tag (e) |
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