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Foto | Bezeichnung | Hersteller | Beschreibung |
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AOS218/247 Dichtung keramische 3mm 25x21 TO218/247 Produktcode: 29478 |
Fisher |
Isoliermaterialien Gruppe: Dichtungen, Schichtunterlage, Isolierhulse Beschreibung: Dichtung thermisch leitende keramische, 3mm 25x21mm, für ТО-218, ТО-247, 25W/mК, 10kV/mm Größe: 21х25х3mm + Loch.4,0mm, fuer Gehause TO-218, TO-247 Матеріал: Кераміка |
auf Bestellung 467 Stück: Lieferzeit 21-28 Tag (e) |
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AOS247 Dichtung keramische TO-247 Produktcode: 35986 |
Fisher |
Isoliermaterialien Gruppe: Dichtungen, Schichtunterlage, Isolierhulse Beschreibung: Dichtung thermisch leitende keramische für ТО-247, 25W/mК, 10kV/mm Größe: 20х23х1mm, fuer Gehause TO-247 Матеріал: Кераміка |
auf Bestellung 171 Stück: Lieferzeit 21-28 Tag (e) |
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Прокладка теплопроводящая TO-247 23x18x0,3мм 1,5 W/mK Produktcode: 185261 |
AG TermoPasty |
Isoliermaterialien Gruppe: Прокладка теплопровідна Beschreibung: Прокладка теплопровідна керамічна для ТО-247, 1,5Вт/мК Größe: 23х18х0,3мм, під корпус TO-247 |
auf Bestellung 662 Stück: Lieferzeit 21-28 Tag (e) |
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513201B02500G | Boyd Laconia, LLC |
Description: HEATSINK TO-218/TO-247 W/PINS 2" Packaging: Bulk Material: Aluminum Length: 2.000" (50.80mm) Shape: Rectangular, Fins Type: Board Level, Vertical Width: 1.375" (34.93mm) Package Cooled: TO-218 Attachment Method: Bolt On and PC Pin Power Dissipation @ Temperature Rise: 2.0W @ 20°C Thermal Resistance @ Forced Air Flow: 3.00°C/W @ 400 LFM Thermal Resistance @ Natural: 8.30°C/W Fin Height: 0.500" (12.70mm) Material Finish: Black Anodized |
auf Bestellung 3294 Stücke: Lieferzeit 10-14 Tag (e) |
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60CPQ150 | SMC Diode Solutions |
Description: DIODE ARR SCHOT 150V 30A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V |
auf Bestellung 2835 Stücke: Lieferzeit 10-14 Tag (e) |
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6400BG | Boyd Laconia, LLC |
Description: BOARD LEVEL HEAT SINK Packaging: Bulk Material: Aluminum Length: 1.650" (41.91mm) Shape: Rectangular, Fins Type: Board Level, Vertical Width: 1.000" (25.40mm) Package Cooled: TO-218, TO-220, TO-247, Multiwatt Attachment Method: Bolt On and PC Pin Power Dissipation @ Temperature Rise: 4.0W @ 20°C Thermal Resistance @ Forced Air Flow: 1.50°C/W @ 400 LFM Thermal Resistance @ Natural: 2.70°C/W Fin Height: 2.500" (63.50mm) Material Finish: Black Anodized |
auf Bestellung 2083 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMW120R045M1XKSA1 | Infineon Technologies | MOSFET SIC_DISCRETE |
auf Bestellung 1796 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMZA75R016M1HXKSA1 | Infineon Technologies | MOSFET AUTOMOTIVE_SICMOS |
auf Bestellung 220 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMZA75R020M1HXKSA1 | Infineon Technologies | MOSFET AUTOMOTIVE_SICMOS |
auf Bestellung 230 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMZA75R027M1HXKSA1 | Infineon Technologies | MOSFET AUTOMOTIVE_SICMOS |
auf Bestellung 230 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMZA75R040M1HXKSA1 | Infineon Technologies | MOSFET AUTOMOTIVE_SICMOS |
auf Bestellung 220 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMZA75R060M1HXKSA1 | Infineon Technologies | MOSFET AUTOMOTIVE_SICMOS |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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AOS 247 | FISCHER ELEKTRONIK |
Category: Heatsinks - equipment Description: Heat transfer pad: ceramic; TO247; L: 20mm; W: 23mm; Thk: 1mm; 25W/mK Application: TO247 Length: 20mm Width: 23mm Thickness: 1mm Type of heat transfer pad: ceramic Electrical insulation: 10kV/mm Pad volume resistance: 100TΩ/cm Thermal conductivity: 25W/mK |
auf Bestellung 6263 Stücke: Lieferzeit 14-21 Tag (e) |
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APT30D60BG | Microchip Technology |
Description: DIODE GP 600V 30A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
auf Bestellung 7731 Stücke: Lieferzeit 10-14 Tag (e) |
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APT60D120BG | Microchip Technology |
Description: DIODE GP 1.2KV 60A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
auf Bestellung 1014 Stücke: Lieferzeit 10-14 Tag (e) |
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APT60D60BG | Microchip Technology |
Description: DIODE GP 600V 60A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 130 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
auf Bestellung 4027 Stücke: Lieferzeit 10-14 Tag (e) |
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APT75DQ120BG | Microchip Technology |
Description: DIODE GP 1.2KV 75A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 325 ns Technology: Standard Current - Average Rectified (Io): 75A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 75 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
auf Bestellung 2378 Stücke: Lieferzeit 10-14 Tag (e) |
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APT75DQ60BG | Microchip Technology |
Description: DIODE GP 600V 75A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 31 ns Technology: Standard Current - Average Rectified (Io): 75A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 75 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
auf Bestellung 20548 Stücke: Lieferzeit 10-14 Tag (e) |
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BYV72EW-200,127 | WeEn Semiconductors |
Description: DIODE ARRAY GP 200V 15A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 28 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
auf Bestellung 11800 Stücke: Lieferzeit 10-14 Tag (e) |
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CD-02-05-247 | Wakefield Thermal |
Category: Heatsinks - equipment Description: Heat transfer pad: ulTIMiFlux; TO247; L: 24.13mm; W: 19.05mm Application: TO247 Colour: orange Length: 24.13mm Width: 19.05mm Thickness: 76µm Type of heat transfer pad: ulTIMiFlux |
auf Bestellung 485 Stücke: Lieferzeit 14-21 Tag (e) |
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CD-02-05-247 | Wakefield-Vette |
Description: THERM PAD 24.13MMX19.05MM ORANGE Packaging: Bulk Color: Orange Material: Phase Change Compound Shape: Rectangular Thickness: 0.0030" (0.076mm) Type: Pad, Sheet Usage: TO-247 Outline: 24.13mm x 19.05mm Backing, Carrier: Polyimide Part Status: Active |
auf Bestellung 4660 Stücke: Lieferzeit 10-14 Tag (e) |
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CD-02-05-247 | WAKEFIELD THERMAL |
Description: WAKEFIELD THERMAL - CD-02-05-247 - PHASE CHANGE THERMAL MATERIAL, TO247 tariffCode: 85479000 productTraceability: No Spannungsfestigkeit: - Leitendes Material: - rohsCompliant: YES Dicke: 0.0762mm Außenlänge: 24.13mm euEccn: NLR Wärmewiderstand: 0.107°C/W hazardous: false rohsPhthalatesCompliant: YES Wärmeleitfähigkeit: - directShipCharge: 25 usEccn: EAR99 Außenbreite: 19.05mm Produktpalette: ulTIMiFlux Series SVHC: No SVHC (15-Jan-2019) |
auf Bestellung 1013 Stücke: Lieferzeit 14-21 Tag (e) |
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CD-02-05-247-3 | WAKEFIELD THERMAL |
Description: WAKEFIELD THERMAL - CD-02-05-247-3 - PHASE CHANGE PAD, TO247, 57.15 X 24.13MM tariffCode: 85479000 productTraceability: No Leitendes Material: - rohsCompliant: YES Dicke: 0.0762mm Außenlänge: 57.15mm euEccn: NLR Wärmewiderstand: 0.107°C/W hazardous: false rohsPhthalatesCompliant: YES Wärmeleitfähigkeit: - directShipCharge: 25 Spezifischer Durchgangswiderstand: - usEccn: EAR99 Außenbreite: 24.13mm Produktpalette: ulTIMiFlux Series SVHC: No SVHC (15-Jan-2019) |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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CD-02-05-247-N | WAKEFIELD THERMAL |
Description: WAKEFIELD THERMAL - CD-02-05-247-N - PHASE CHANGE PAD, TO247, 24.13 X 19.1MM tariffCode: 85479000 productTraceability: No Leitendes Material: - rohsCompliant: YES Dicke: 0.0762mm Außenlänge: 24.13mm euEccn: NLR Wärmewiderstand: 0.107°C/W hazardous: false rohsPhthalatesCompliant: YES Wärmeleitfähigkeit: - directShipCharge: 25 Spezifischer Durchgangswiderstand: - usEccn: EAR99 Außenbreite: 19.1mm Produktpalette: ulTIMiFlux Series SVHC: No SVHC (15-Jan-2019) |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
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CLA-T247-21E | Ohmite |
Description: CAMMING CLIP FOR TO-247 Packaging: Box For Use With/Related Products: TO-247 Accessory Type: Clip, Cam |
auf Bestellung 4997 Stücke: Lieferzeit 10-14 Tag (e) |
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CLA-TO-21E | Ohmite |
Description: CAM CLIP FOR TO DEVICES Packaging: Box For Use With/Related Products: TO-247, TO-264 Accessory Type: Clip, Cam |
auf Bestellung 808 Stücke: Lieferzeit 10-14 Tag (e) |
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FA-T220-38E | Ohmite |
Description: HEATSINK TO-218,TO-220,TO-247 Packaging: Box Material: Aluminum Length: 1.500" (38.10mm) Shape: Rectangular, Fins Type: Board Level, Vertical Width: 1.638" (41.60mm) Package Cooled: TO-218, TO-220, TO-247 Attachment Method: Bolt On and PC Pin Power Dissipation @ Temperature Rise: 10.0W @ 50°C Thermal Resistance @ Forced Air Flow: 1.50°C/W @ 600 LFM Thermal Resistance @ Natural: 3.80°C/W Fin Height: 0.984" (25.00mm) Material Finish: Black Anodized |
auf Bestellung 1173 Stücke: Lieferzeit 10-14 Tag (e) |
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FA-T220-51E | Ohmite |
Description: HEATSINK TO-218,TO-220,TO-247 Packaging: Box Material: Aluminum Length: 2.000" (50.80mm) Shape: Rectangular, Fins Type: Board Level, Vertical Width: 1.638" (41.60mm) Package Cooled: TO-218, TO-220, TO-247 Attachment Method: Bolt On and PC Pin Power Dissipation @ Temperature Rise: 4.0W @ 20°C Thermal Resistance @ Forced Air Flow: 2.00°C/W @ 300 LFM Thermal Resistance @ Natural: 3.40°C/W Fin Height: 0.984" (25.00mm) Material Finish: Black Anodized Part Status: Active |
auf Bestellung 2793 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH4L50T65MQDC50 | onsemi | IGBT Transistors 650V Field stop 4th generation mid speed IGBT with co-pack SiC diode |
auf Bestellung 425 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH60N60SFTU | ONSEMI |
Description: ONSEMI - FGH60N60SFTU - IGBT,N CH,600V,120A,TO247 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 9888 Stücke: Lieferzeit 14-21 Tag (e) |
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FGHL40T120RWD | onsemi | IGBT Transistors 1200V, 40A Trench Field Stop VII (FS7) Discrete IGBT in TO247-3L Packaging 1200V 40A FS7 Low Vcesat IGBT Discrete |
auf Bestellung 418 Stücke: Lieferzeit 10-14 Tag (e) |
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FGY100T120SWD | onsemi | IGBT Transistors 1200V, 100A Field Stop VII (FS7) Discrete IGBT in Power TO247-3L Packaging N-Channel, Field Stop VII (FS7), Non-SCR, TO247-3 1200 V, 1.7 V, 100 A |
auf Bestellung 339 Stücke: Lieferzeit 10-14 Tag (e) |
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FGY140T120SWD | onsemi | IGBT Transistors 1200V, 140A Field Stop VII (FS7) Fast Discrete IGBT in Power TO247-3L Packaging 1200V 140A FS7 Fast IGBT Discrete |
auf Bestellung 630 Stücke: Lieferzeit 10-14 Tag (e) |
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HF115AC-0.0055-AC-90 | Bergquist |
Description: THERM PAD 21.84MMX18.79MM W/ADH Packaging: Bulk Color: Gray Material: Phase Change Compound Shape: Rectangular Thickness: 0.0055" (0.140mm) Type: Pad, Sheet Thermal Resistivity: 0.35°C/W Usage: TO-218, TO-220, TO-247 Outline: 21.84mm x 18.79mm Thermal Conductivity: 0.8W/m-K Adhesive: Adhesive - One Side Backing, Carrier: Fiberglass Part Status: Active |
auf Bestellung 252 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW30N60H3FKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 60A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 21ns/207ns Switching Energy: 1.38mJ Test Condition: 400V, 30A, 10.5Ohm, 15V Gate Charge: 165 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 187 W |
auf Bestellung 1715 Stücke: Lieferzeit 10-14 Tag (e) |
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IKQ150N65EH7XKSA1 | Infineon Technologies | IGBT Transistors INDUSTRY 14 |
auf Bestellung 341 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW30N60DTPXKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 53A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 76 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 15ns/179ns Switching Energy: 710µJ (on), 420µJ (off) Test Condition: 400V, 30A, 10.5Ohm, 15V Gate Charge: 130 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 53 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 200 W |
auf Bestellung 1080 Stücke: Lieferzeit 10-14 Tag (e) |
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IKY150N65EH7XKSA1 | Infineon Technologies | IGBT Transistors INDUSTRY 14 |
auf Bestellung 177 Stücke: Lieferzeit 10-14 Tag (e) |
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IMW65R020M2HXKSA1 | Infineon Technologies | MOSFET SILICON CARBIDE MOSFET |
auf Bestellung 476 Stücke: Lieferzeit 10-14 Tag (e) |
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IMW65R040M2HXKSA1 | Infineon Technologies | MOSFET SILICON CARBIDE MOSFET |
auf Bestellung 490 Stücke: Lieferzeit 10-14 Tag (e) |
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IMW65R050M2HXKSA1 | Infineon Technologies | MOSFET SILICON CARBIDE MOSFET |
auf Bestellung 465 Stücke: Lieferzeit 10-14 Tag (e) |
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IMZA65R015M2HXKSA1 | Infineon Technologies | MOSFET SILICON CARBIDE MOSFET |
auf Bestellung 468 Stücke: Lieferzeit 10-14 Tag (e) |
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IMZA65R020M2HXKSA1 | Infineon Technologies | MOSFET SILICON CARBIDE MOSFET |
auf Bestellung 382 Stücke: Lieferzeit 10-14 Tag (e) |
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IMZA65R040M2HXKSA1 | Infineon Technologies | MOSFET SILICON CARBIDE MOSFET |
auf Bestellung 464 Stücke: Lieferzeit 10-14 Tag (e) |
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IMZA65R050M2HXKSA1 | Infineon Technologies | MOSFET SILICON CARBIDE MOSFET |
auf Bestellung 448 Stücke: Lieferzeit 10-14 Tag (e) |
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IMZA75R016M1HXKSA1 | Infineon Technologies | MOSFET SILICON CARBIDE MOSFET |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP064NPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 110A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 59A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V |
auf Bestellung 2331 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP240PBF | Vishay Siliconix |
Description: MOSFET N-CH 200V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 12A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
auf Bestellung 1563 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP250NPBF | Infineon Technologies |
Description: MOSFET N-CH 200V 30A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 18A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2159 pF @ 25 V |
auf Bestellung 8163 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP260MPBF | Infineon Technologies |
Description: MOSFET N-CH 200V 50A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 28A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4057 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 6445 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP3206PBF | Infineon Technologies |
Description: MOSFET N-CH 60V 120A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V |
auf Bestellung 10098 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP350PBF | Vishay Siliconix |
Description: MOSFET N-CH 400V 16A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 9.6A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
auf Bestellung 1125 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP3710PBF | Infineon Technologies |
Description: MOSFET N-CH 100V 57A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 28A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
auf Bestellung 11699 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP450PBF | Vishay Siliconix |
Description: MOSFET N-CH 500V 14A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
auf Bestellung 1135 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFP9140PBF | Vishay Siliconix |
Description: MOSFET P-CH 100V 21A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 2116 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH30N120C4H1 | IXYS | IGBT Transistors IXYH30N120C4H1 |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH40N120B4H1 | IXYS | IGBT Transistors IXYH40N120B4H1 |
auf Bestellung 373 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH40N120C4H1 | IXYS | IGBT Transistors IXYH40N120C4H1 |
auf Bestellung 366 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH55N120B4H1 | IXYS | IGBT Transistors IXYH55N120B4H1 |
auf Bestellung 72 Stücke: Lieferzeit 10-14 Tag (e) |
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MAX03-HNG | BOYD |
Description: BOYD - MAX03-HNG - HIGH FORCE RAIL CLIP, 18MM, TO247 tariffCode: 76169990 productTraceability: No Befestigungsart: Rail Clip rohsCompliant: YES Außenlänge: 14.7mm euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES directShipCharge: 25 Zur Verwendung mit: TO-247/MAX247, TO-247J Packages usEccn: EAR99 Außenbreite: 18mm Produktpalette: Max Clip System Series SVHC: No SVHC (15-Jan-2019) |
auf Bestellung 1919 Stücke: Lieferzeit 14-21 Tag (e) |
AOS218/247 Dichtung keramische 3mm 25x21 TO218/247 Produktcode: 29478 |
Hersteller: Fisher
Isoliermaterialien
Gruppe: Dichtungen, Schichtunterlage, Isolierhulse
Beschreibung: Dichtung thermisch leitende keramische, 3mm 25x21mm, für ТО-218, ТО-247, 25W/mК, 10kV/mm
Größe: 21х25х3mm + Loch.4,0mm, fuer Gehause TO-218, TO-247
Матеріал: Кераміка
Isoliermaterialien
Gruppe: Dichtungen, Schichtunterlage, Isolierhulse
Beschreibung: Dichtung thermisch leitende keramische, 3mm 25x21mm, für ТО-218, ТО-247, 25W/mК, 10kV/mm
Größe: 21х25х3mm + Loch.4,0mm, fuer Gehause TO-218, TO-247
Матеріал: Кераміка
auf Bestellung 467 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 0.76 EUR |
AOS247 Dichtung keramische TO-247 Produktcode: 35986 |
Hersteller: Fisher
Isoliermaterialien
Gruppe: Dichtungen, Schichtunterlage, Isolierhulse
Beschreibung: Dichtung thermisch leitende keramische für ТО-247, 25W/mК, 10kV/mm
Größe: 20х23х1mm, fuer Gehause TO-247
Матеріал: Кераміка
Isoliermaterialien
Gruppe: Dichtungen, Schichtunterlage, Isolierhulse
Beschreibung: Dichtung thermisch leitende keramische für ТО-247, 25W/mК, 10kV/mm
Größe: 20х23х1mm, fuer Gehause TO-247
Матеріал: Кераміка
auf Bestellung 171 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 0.55 EUR |
Прокладка теплопроводящая TO-247 23x18x0,3мм 1,5 W/mK Produktcode: 185261 |
Hersteller: AG TermoPasty
Isoliermaterialien
Gruppe: Прокладка теплопровідна
Beschreibung: Прокладка теплопровідна керамічна для ТО-247, 1,5Вт/мК
Größe: 23х18х0,3мм, під корпус TO-247
Isoliermaterialien
Gruppe: Прокладка теплопровідна
Beschreibung: Прокладка теплопровідна керамічна для ТО-247, 1,5Вт/мК
Größe: 23х18х0,3мм, під корпус TO-247
auf Bestellung 662 Stück:
Lieferzeit 21-28 Tag (e)513201B02500G |
Hersteller: Boyd Laconia, LLC
Description: HEATSINK TO-218/TO-247 W/PINS 2"
Packaging: Bulk
Material: Aluminum
Length: 2.000" (50.80mm)
Shape: Rectangular, Fins
Type: Board Level, Vertical
Width: 1.375" (34.93mm)
Package Cooled: TO-218
Attachment Method: Bolt On and PC Pin
Power Dissipation @ Temperature Rise: 2.0W @ 20°C
Thermal Resistance @ Forced Air Flow: 3.00°C/W @ 400 LFM
Thermal Resistance @ Natural: 8.30°C/W
Fin Height: 0.500" (12.70mm)
Material Finish: Black Anodized
Description: HEATSINK TO-218/TO-247 W/PINS 2"
Packaging: Bulk
Material: Aluminum
Length: 2.000" (50.80mm)
Shape: Rectangular, Fins
Type: Board Level, Vertical
Width: 1.375" (34.93mm)
Package Cooled: TO-218
Attachment Method: Bolt On and PC Pin
Power Dissipation @ Temperature Rise: 2.0W @ 20°C
Thermal Resistance @ Forced Air Flow: 3.00°C/W @ 400 LFM
Thermal Resistance @ Natural: 8.30°C/W
Fin Height: 0.500" (12.70mm)
Material Finish: Black Anodized
auf Bestellung 3294 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.46 EUR |
10+ | 2.34 EUR |
25+ | 2.28 EUR |
50+ | 2.22 EUR |
100+ | 2.1 EUR |
250+ | 1.97 EUR |
500+ | 1.85 EUR |
1000+ | 1.73 EUR |
60CPQ150 |
Hersteller: SMC Diode Solutions
Description: DIODE ARR SCHOT 150V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Description: DIODE ARR SCHOT 150V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
auf Bestellung 2835 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6 EUR |
25+ | 4.75 EUR |
100+ | 4.08 EUR |
500+ | 3.62 EUR |
1000+ | 3.1 EUR |
2000+ | 2.92 EUR |
6400BG |
Hersteller: Boyd Laconia, LLC
Description: BOARD LEVEL HEAT SINK
Packaging: Bulk
Material: Aluminum
Length: 1.650" (41.91mm)
Shape: Rectangular, Fins
Type: Board Level, Vertical
Width: 1.000" (25.40mm)
Package Cooled: TO-218, TO-220, TO-247, Multiwatt
Attachment Method: Bolt On and PC Pin
Power Dissipation @ Temperature Rise: 4.0W @ 20°C
Thermal Resistance @ Forced Air Flow: 1.50°C/W @ 400 LFM
Thermal Resistance @ Natural: 2.70°C/W
Fin Height: 2.500" (63.50mm)
Material Finish: Black Anodized
Description: BOARD LEVEL HEAT SINK
Packaging: Bulk
Material: Aluminum
Length: 1.650" (41.91mm)
Shape: Rectangular, Fins
Type: Board Level, Vertical
Width: 1.000" (25.40mm)
Package Cooled: TO-218, TO-220, TO-247, Multiwatt
Attachment Method: Bolt On and PC Pin
Power Dissipation @ Temperature Rise: 4.0W @ 20°C
Thermal Resistance @ Forced Air Flow: 1.50°C/W @ 400 LFM
Thermal Resistance @ Natural: 2.70°C/W
Fin Height: 2.500" (63.50mm)
Material Finish: Black Anodized
auf Bestellung 2083 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.54 EUR |
10+ | 5.4 EUR |
25+ | 5.25 EUR |
50+ | 4.96 EUR |
100+ | 4.67 EUR |
250+ | 4.38 EUR |
500+ | 4.23 EUR |
1000+ | 3.79 EUR |
AIMW120R045M1XKSA1 |
Hersteller: Infineon Technologies
MOSFET SIC_DISCRETE
MOSFET SIC_DISCRETE
auf Bestellung 1796 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 35.94 EUR |
10+ | 32.81 EUR |
25+ | 28.02 EUR |
50+ | 27.98 EUR |
100+ | 26.54 EUR |
240+ | 24.45 EUR |
480+ | 24.32 EUR |
AIMZA75R016M1HXKSA1 |
Hersteller: Infineon Technologies
MOSFET AUTOMOTIVE_SICMOS
MOSFET AUTOMOTIVE_SICMOS
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 40.59 EUR |
10+ | 36.08 EUR |
25+ | 33.65 EUR |
50+ | 32.61 EUR |
100+ | 31.56 EUR |
240+ | 29.44 EUR |
480+ | 27.09 EUR |
AIMZA75R020M1HXKSA1 |
Hersteller: Infineon Technologies
MOSFET AUTOMOTIVE_SICMOS
MOSFET AUTOMOTIVE_SICMOS
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 32.75 EUR |
10+ | 29.11 EUR |
25+ | 27.16 EUR |
50+ | 26.31 EUR |
100+ | 25.47 EUR |
240+ | 23.74 EUR |
480+ | 21.86 EUR |
AIMZA75R027M1HXKSA1 |
Hersteller: Infineon Technologies
MOSFET AUTOMOTIVE_SICMOS
MOSFET AUTOMOTIVE_SICMOS
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 27.02 EUR |
10+ | 23.8 EUR |
25+ | 23.14 EUR |
50+ | 21.86 EUR |
100+ | 20.57 EUR |
240+ | 19.94 EUR |
480+ | 18.64 EUR |
AIMZA75R040M1HXKSA1 |
Hersteller: Infineon Technologies
MOSFET AUTOMOTIVE_SICMOS
MOSFET AUTOMOTIVE_SICMOS
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 19.25 EUR |
10+ | 16.95 EUR |
25+ | 16.49 EUR |
50+ | 15.58 EUR |
100+ | 14.66 EUR |
240+ | 14.2 EUR |
480+ | 13.29 EUR |
AIMZA75R060M1HXKSA1 |
Hersteller: Infineon Technologies
MOSFET AUTOMOTIVE_SICMOS
MOSFET AUTOMOTIVE_SICMOS
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 17.14 EUR |
10+ | 14.7 EUR |
25+ | 13.68 EUR |
100+ | 12.25 EUR |
240+ | 11.53 EUR |
AOS 247 |
Hersteller: FISCHER ELEKTRONIK
Category: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO247; L: 20mm; W: 23mm; Thk: 1mm; 25W/mK
Application: TO247
Length: 20mm
Width: 23mm
Thickness: 1mm
Type of heat transfer pad: ceramic
Electrical insulation: 10kV/mm
Pad volume resistance: 100TΩ/cm
Thermal conductivity: 25W/mK
Category: Heatsinks - equipment
Description: Heat transfer pad: ceramic; TO247; L: 20mm; W: 23mm; Thk: 1mm; 25W/mK
Application: TO247
Length: 20mm
Width: 23mm
Thickness: 1mm
Type of heat transfer pad: ceramic
Electrical insulation: 10kV/mm
Pad volume resistance: 100TΩ/cm
Thermal conductivity: 25W/mK
auf Bestellung 6263 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
64+ | 1.13 EUR |
106+ | 0.68 EUR |
148+ | 0.49 EUR |
152+ | 0.47 EUR |
APT30D60BG |
Hersteller: Microchip Technology
Description: DIODE GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
auf Bestellung 7731 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.77 EUR |
100+ | 3.05 EUR |
APT60D120BG |
Hersteller: Microchip Technology
Description: DIODE GP 1.2KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE GP 1.2KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 1014 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.3 EUR |
100+ | 5.09 EUR |
APT60D60BG |
Hersteller: Microchip Technology
Description: DIODE GP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE GP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
auf Bestellung 4027 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.42 EUR |
100+ | 4.39 EUR |
APT75DQ120BG |
Hersteller: Microchip Technology
Description: DIODE GP 1.2KV 75A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 325 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 75 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GP 1.2KV 75A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 325 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 75 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 2378 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.42 EUR |
100+ | 4.39 EUR |
APT75DQ60BG |
Hersteller: Microchip Technology
Description: DIODE GP 600V 75A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 75 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE GP 600V 75A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 75 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
auf Bestellung 20548 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.52 EUR |
100+ | 3.67 EUR |
BYV72EW-200,127 |
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY GP 200V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE ARRAY GP 200V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
auf Bestellung 11800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.13 EUR |
30+ | 2.52 EUR |
120+ | 2.07 EUR |
510+ | 1.75 EUR |
1020+ | 1.49 EUR |
2010+ | 1.41 EUR |
5010+ | 1.36 EUR |
10020+ | 1.31 EUR |
CD-02-05-247 |
Hersteller: Wakefield Thermal
Category: Heatsinks - equipment
Description: Heat transfer pad: ulTIMiFlux; TO247; L: 24.13mm; W: 19.05mm
Application: TO247
Colour: orange
Length: 24.13mm
Width: 19.05mm
Thickness: 76µm
Type of heat transfer pad: ulTIMiFlux
Category: Heatsinks - equipment
Description: Heat transfer pad: ulTIMiFlux; TO247; L: 24.13mm; W: 19.05mm
Application: TO247
Colour: orange
Length: 24.13mm
Width: 19.05mm
Thickness: 76µm
Type of heat transfer pad: ulTIMiFlux
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
41+ | 1.76 EUR |
58+ | 1.24 EUR |
61+ | 1.17 EUR |
CD-02-05-247 |
Hersteller: Wakefield-Vette
Description: THERM PAD 24.13MMX19.05MM ORANGE
Packaging: Bulk
Color: Orange
Material: Phase Change Compound
Shape: Rectangular
Thickness: 0.0030" (0.076mm)
Type: Pad, Sheet
Usage: TO-247
Outline: 24.13mm x 19.05mm
Backing, Carrier: Polyimide
Part Status: Active
Description: THERM PAD 24.13MMX19.05MM ORANGE
Packaging: Bulk
Color: Orange
Material: Phase Change Compound
Shape: Rectangular
Thickness: 0.0030" (0.076mm)
Type: Pad, Sheet
Usage: TO-247
Outline: 24.13mm x 19.05mm
Backing, Carrier: Polyimide
Part Status: Active
auf Bestellung 4660 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.29 EUR |
10+ | 2.18 EUR |
25+ | 2.12 EUR |
50+ | 2.07 EUR |
100+ | 1.95 EUR |
250+ | 1.84 EUR |
500+ | 1.72 EUR |
1000+ | 1.61 EUR |
CD-02-05-247 |
Hersteller: WAKEFIELD THERMAL
Description: WAKEFIELD THERMAL - CD-02-05-247 - PHASE CHANGE THERMAL MATERIAL, TO247
tariffCode: 85479000
productTraceability: No
Spannungsfestigkeit: -
Leitendes Material: -
rohsCompliant: YES
Dicke: 0.0762mm
Außenlänge: 24.13mm
euEccn: NLR
Wärmewiderstand: 0.107°C/W
hazardous: false
rohsPhthalatesCompliant: YES
Wärmeleitfähigkeit: -
directShipCharge: 25
usEccn: EAR99
Außenbreite: 19.05mm
Produktpalette: ulTIMiFlux Series
SVHC: No SVHC (15-Jan-2019)
Description: WAKEFIELD THERMAL - CD-02-05-247 - PHASE CHANGE THERMAL MATERIAL, TO247
tariffCode: 85479000
productTraceability: No
Spannungsfestigkeit: -
Leitendes Material: -
rohsCompliant: YES
Dicke: 0.0762mm
Außenlänge: 24.13mm
euEccn: NLR
Wärmewiderstand: 0.107°C/W
hazardous: false
rohsPhthalatesCompliant: YES
Wärmeleitfähigkeit: -
directShipCharge: 25
usEccn: EAR99
Außenbreite: 19.05mm
Produktpalette: ulTIMiFlux Series
SVHC: No SVHC (15-Jan-2019)
auf Bestellung 1013 Stücke:
Lieferzeit 14-21 Tag (e)CD-02-05-247-3 |
Hersteller: WAKEFIELD THERMAL
Description: WAKEFIELD THERMAL - CD-02-05-247-3 - PHASE CHANGE PAD, TO247, 57.15 X 24.13MM
tariffCode: 85479000
productTraceability: No
Leitendes Material: -
rohsCompliant: YES
Dicke: 0.0762mm
Außenlänge: 57.15mm
euEccn: NLR
Wärmewiderstand: 0.107°C/W
hazardous: false
rohsPhthalatesCompliant: YES
Wärmeleitfähigkeit: -
directShipCharge: 25
Spezifischer Durchgangswiderstand: -
usEccn: EAR99
Außenbreite: 24.13mm
Produktpalette: ulTIMiFlux Series
SVHC: No SVHC (15-Jan-2019)
Description: WAKEFIELD THERMAL - CD-02-05-247-3 - PHASE CHANGE PAD, TO247, 57.15 X 24.13MM
tariffCode: 85479000
productTraceability: No
Leitendes Material: -
rohsCompliant: YES
Dicke: 0.0762mm
Außenlänge: 57.15mm
euEccn: NLR
Wärmewiderstand: 0.107°C/W
hazardous: false
rohsPhthalatesCompliant: YES
Wärmeleitfähigkeit: -
directShipCharge: 25
Spezifischer Durchgangswiderstand: -
usEccn: EAR99
Außenbreite: 24.13mm
Produktpalette: ulTIMiFlux Series
SVHC: No SVHC (15-Jan-2019)
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)CD-02-05-247-N |
Hersteller: WAKEFIELD THERMAL
Description: WAKEFIELD THERMAL - CD-02-05-247-N - PHASE CHANGE PAD, TO247, 24.13 X 19.1MM
tariffCode: 85479000
productTraceability: No
Leitendes Material: -
rohsCompliant: YES
Dicke: 0.0762mm
Außenlänge: 24.13mm
euEccn: NLR
Wärmewiderstand: 0.107°C/W
hazardous: false
rohsPhthalatesCompliant: YES
Wärmeleitfähigkeit: -
directShipCharge: 25
Spezifischer Durchgangswiderstand: -
usEccn: EAR99
Außenbreite: 19.1mm
Produktpalette: ulTIMiFlux Series
SVHC: No SVHC (15-Jan-2019)
Description: WAKEFIELD THERMAL - CD-02-05-247-N - PHASE CHANGE PAD, TO247, 24.13 X 19.1MM
tariffCode: 85479000
productTraceability: No
Leitendes Material: -
rohsCompliant: YES
Dicke: 0.0762mm
Außenlänge: 24.13mm
euEccn: NLR
Wärmewiderstand: 0.107°C/W
hazardous: false
rohsPhthalatesCompliant: YES
Wärmeleitfähigkeit: -
directShipCharge: 25
Spezifischer Durchgangswiderstand: -
usEccn: EAR99
Außenbreite: 19.1mm
Produktpalette: ulTIMiFlux Series
SVHC: No SVHC (15-Jan-2019)
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)CLA-T247-21E |
Hersteller: Ohmite
Description: CAMMING CLIP FOR TO-247
Packaging: Box
For Use With/Related Products: TO-247
Accessory Type: Clip, Cam
Description: CAMMING CLIP FOR TO-247
Packaging: Box
For Use With/Related Products: TO-247
Accessory Type: Clip, Cam
auf Bestellung 4997 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.71 EUR |
10+ | 2.57 EUR |
30+ | 2.51 EUR |
50+ | 2.44 EUR |
100+ | 2.3 EUR |
250+ | 2.17 EUR |
500+ | 2.03 EUR |
1000+ | 1.9 EUR |
CLA-TO-21E |
Hersteller: Ohmite
Description: CAM CLIP FOR TO DEVICES
Packaging: Box
For Use With/Related Products: TO-247, TO-264
Accessory Type: Clip, Cam
Description: CAM CLIP FOR TO DEVICES
Packaging: Box
For Use With/Related Products: TO-247, TO-264
Accessory Type: Clip, Cam
auf Bestellung 808 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.68 EUR |
10+ | 2.53 EUR |
30+ | 2.46 EUR |
50+ | 2.4 EUR |
100+ | 2.26 EUR |
250+ | 2.13 EUR |
500+ | 2 EUR |
FA-T220-38E |
Hersteller: Ohmite
Description: HEATSINK TO-218,TO-220,TO-247
Packaging: Box
Material: Aluminum
Length: 1.500" (38.10mm)
Shape: Rectangular, Fins
Type: Board Level, Vertical
Width: 1.638" (41.60mm)
Package Cooled: TO-218, TO-220, TO-247
Attachment Method: Bolt On and PC Pin
Power Dissipation @ Temperature Rise: 10.0W @ 50°C
Thermal Resistance @ Forced Air Flow: 1.50°C/W @ 600 LFM
Thermal Resistance @ Natural: 3.80°C/W
Fin Height: 0.984" (25.00mm)
Material Finish: Black Anodized
Description: HEATSINK TO-218,TO-220,TO-247
Packaging: Box
Material: Aluminum
Length: 1.500" (38.10mm)
Shape: Rectangular, Fins
Type: Board Level, Vertical
Width: 1.638" (41.60mm)
Package Cooled: TO-218, TO-220, TO-247
Attachment Method: Bolt On and PC Pin
Power Dissipation @ Temperature Rise: 10.0W @ 50°C
Thermal Resistance @ Forced Air Flow: 1.50°C/W @ 600 LFM
Thermal Resistance @ Natural: 3.80°C/W
Fin Height: 0.984" (25.00mm)
Material Finish: Black Anodized
auf Bestellung 1173 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.64 EUR |
10+ | 3.55 EUR |
25+ | 3.45 EUR |
50+ | 3.26 EUR |
100+ | 3.07 EUR |
294+ | 2.88 EUR |
588+ | 2.78 EUR |
FA-T220-51E |
Hersteller: Ohmite
Description: HEATSINK TO-218,TO-220,TO-247
Packaging: Box
Material: Aluminum
Length: 2.000" (50.80mm)
Shape: Rectangular, Fins
Type: Board Level, Vertical
Width: 1.638" (41.60mm)
Package Cooled: TO-218, TO-220, TO-247
Attachment Method: Bolt On and PC Pin
Power Dissipation @ Temperature Rise: 4.0W @ 20°C
Thermal Resistance @ Forced Air Flow: 2.00°C/W @ 300 LFM
Thermal Resistance @ Natural: 3.40°C/W
Fin Height: 0.984" (25.00mm)
Material Finish: Black Anodized
Part Status: Active
Description: HEATSINK TO-218,TO-220,TO-247
Packaging: Box
Material: Aluminum
Length: 2.000" (50.80mm)
Shape: Rectangular, Fins
Type: Board Level, Vertical
Width: 1.638" (41.60mm)
Package Cooled: TO-218, TO-220, TO-247
Attachment Method: Bolt On and PC Pin
Power Dissipation @ Temperature Rise: 4.0W @ 20°C
Thermal Resistance @ Forced Air Flow: 2.00°C/W @ 300 LFM
Thermal Resistance @ Natural: 3.40°C/W
Fin Height: 0.984" (25.00mm)
Material Finish: Black Anodized
Part Status: Active
auf Bestellung 2793 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4 EUR |
10+ | 3.89 EUR |
25+ | 3.79 EUR |
50+ | 3.58 EUR |
100+ | 3.37 EUR |
250+ | 3.15 EUR |
500+ | 3.05 EUR |
1000+ | 2.73 EUR |
FGH4L50T65MQDC50 |
Hersteller: onsemi
IGBT Transistors 650V Field stop 4th generation mid speed IGBT with co-pack SiC diode
IGBT Transistors 650V Field stop 4th generation mid speed IGBT with co-pack SiC diode
auf Bestellung 425 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 18.48 EUR |
10+ | 15.84 EUR |
25+ | 14.36 EUR |
100+ | 13.2 EUR |
250+ | 12.43 EUR |
450+ | 11.63 EUR |
900+ | 10.47 EUR |
FGH60N60SFTU |
Hersteller: ONSEMI
Description: ONSEMI - FGH60N60SFTU - IGBT,N CH,600V,120A,TO247
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - FGH60N60SFTU - IGBT,N CH,600V,120A,TO247
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 9888 Stücke:
Lieferzeit 14-21 Tag (e)FGHL40T120RWD |
Hersteller: onsemi
IGBT Transistors 1200V, 40A Trench Field Stop VII (FS7) Discrete IGBT in TO247-3L Packaging 1200V 40A FS7 Low Vcesat IGBT Discrete
IGBT Transistors 1200V, 40A Trench Field Stop VII (FS7) Discrete IGBT in TO247-3L Packaging 1200V 40A FS7 Low Vcesat IGBT Discrete
auf Bestellung 418 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 11.33 EUR |
10+ | 9.7 EUR |
25+ | 8.8 EUR |
100+ | 8.08 EUR |
250+ | 7.6 EUR |
FGY100T120SWD |
Hersteller: onsemi
IGBT Transistors 1200V, 100A Field Stop VII (FS7) Discrete IGBT in Power TO247-3L Packaging N-Channel, Field Stop VII (FS7), Non-SCR, TO247-3 1200 V, 1.7 V, 100 A
IGBT Transistors 1200V, 100A Field Stop VII (FS7) Discrete IGBT in Power TO247-3L Packaging N-Channel, Field Stop VII (FS7), Non-SCR, TO247-3 1200 V, 1.7 V, 100 A
auf Bestellung 339 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 16.74 EUR |
10+ | 14.36 EUR |
25+ | 13.01 EUR |
100+ | 11.95 EUR |
250+ | 11.25 EUR |
450+ | 10.54 EUR |
900+ | 9.49 EUR |
FGY140T120SWD |
Hersteller: onsemi
IGBT Transistors 1200V, 140A Field Stop VII (FS7) Fast Discrete IGBT in Power TO247-3L Packaging 1200V 140A FS7 Fast IGBT Discrete
IGBT Transistors 1200V, 140A Field Stop VII (FS7) Fast Discrete IGBT in Power TO247-3L Packaging 1200V 140A FS7 Fast IGBT Discrete
auf Bestellung 630 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 19.73 EUR |
10+ | 17.39 EUR |
25+ | 16.91 EUR |
50+ | 15.98 EUR |
100+ | 15.03 EUR |
250+ | 14.56 EUR |
450+ | 13.62 EUR |
HF115AC-0.0055-AC-90 |
Hersteller: Bergquist
Description: THERM PAD 21.84MMX18.79MM W/ADH
Packaging: Bulk
Color: Gray
Material: Phase Change Compound
Shape: Rectangular
Thickness: 0.0055" (0.140mm)
Type: Pad, Sheet
Thermal Resistivity: 0.35°C/W
Usage: TO-218, TO-220, TO-247
Outline: 21.84mm x 18.79mm
Thermal Conductivity: 0.8W/m-K
Adhesive: Adhesive - One Side
Backing, Carrier: Fiberglass
Part Status: Active
Description: THERM PAD 21.84MMX18.79MM W/ADH
Packaging: Bulk
Color: Gray
Material: Phase Change Compound
Shape: Rectangular
Thickness: 0.0055" (0.140mm)
Type: Pad, Sheet
Thermal Resistivity: 0.35°C/W
Usage: TO-218, TO-220, TO-247
Outline: 21.84mm x 18.79mm
Thermal Conductivity: 0.8W/m-K
Adhesive: Adhesive - One Side
Backing, Carrier: Fiberglass
Part Status: Active
auf Bestellung 252 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.61 EUR |
10+ | 3.22 EUR |
50+ | 2.88 EUR |
100+ | 2.55 EUR |
IGW30N60H3FKSA1 |
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/207ns
Switching Energy: 1.38mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/207ns
Switching Energy: 1.38mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 1715 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.82 EUR |
30+ | 3.83 EUR |
120+ | 3.28 EUR |
510+ | 2.92 EUR |
1020+ | 2.5 EUR |
IKQ150N65EH7XKSA1 |
Hersteller: Infineon Technologies
IGBT Transistors INDUSTRY 14
IGBT Transistors INDUSTRY 14
auf Bestellung 341 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 21.01 EUR |
10+ | 18.53 EUR |
25+ | 18.02 EUR |
50+ | 17.02 EUR |
100+ | 16.02 EUR |
240+ | 15.51 EUR |
480+ | 14.5 EUR |
IKW30N60DTPXKSA1 |
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 53A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/179ns
Switching Energy: 710µJ (on), 420µJ (off)
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 130 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 200 W
Description: IGBT TRENCH FS 600V 53A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/179ns
Switching Energy: 710µJ (on), 420µJ (off)
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 130 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 200 W
auf Bestellung 1080 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.42 EUR |
30+ | 3.5 EUR |
120+ | 3 EUR |
510+ | 2.67 EUR |
1020+ | 2.28 EUR |
IKY150N65EH7XKSA1 |
Hersteller: Infineon Technologies
IGBT Transistors INDUSTRY 14
IGBT Transistors INDUSTRY 14
auf Bestellung 177 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 25.22 EUR |
10+ | 22.23 EUR |
25+ | 21.63 EUR |
50+ | 20.43 EUR |
100+ | 19.24 EUR |
240+ | 18.6 EUR |
480+ | 17.42 EUR |
IMW65R020M2HXKSA1 |
Hersteller: Infineon Technologies
MOSFET SILICON CARBIDE MOSFET
MOSFET SILICON CARBIDE MOSFET
auf Bestellung 476 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 32.74 EUR |
10+ | 28.85 EUR |
25+ | 28.07 EUR |
50+ | 26.51 EUR |
100+ | 24.94 EUR |
240+ | 24.15 EUR |
480+ | 22.58 EUR |
IMW65R040M2HXKSA1 |
Hersteller: Infineon Technologies
MOSFET SILICON CARBIDE MOSFET
MOSFET SILICON CARBIDE MOSFET
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 19.24 EUR |
10+ | 16.95 EUR |
25+ | 16.49 EUR |
50+ | 15.58 EUR |
100+ | 14.66 EUR |
240+ | 14.19 EUR |
480+ | 13.27 EUR |
IMW65R050M2HXKSA1 |
Hersteller: Infineon Technologies
MOSFET SILICON CARBIDE MOSFET
MOSFET SILICON CARBIDE MOSFET
auf Bestellung 465 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 18.06 EUR |
10+ | 15.49 EUR |
25+ | 14.04 EUR |
100+ | 12.9 EUR |
240+ | 12.13 EUR |
480+ | 11.37 EUR |
1200+ | 10.23 EUR |
IMZA65R015M2HXKSA1 |
Hersteller: Infineon Technologies
MOSFET SILICON CARBIDE MOSFET
MOSFET SILICON CARBIDE MOSFET
auf Bestellung 468 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 37.86 EUR |
10+ | 33.65 EUR |
25+ | 31.4 EUR |
50+ | 30.41 EUR |
100+ | 29.43 EUR |
240+ | 27.46 EUR |
480+ | 25.26 EUR |
IMZA65R020M2HXKSA1 |
Hersteller: Infineon Technologies
MOSFET SILICON CARBIDE MOSFET
MOSFET SILICON CARBIDE MOSFET
auf Bestellung 382 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 33.65 EUR |
10+ | 29.66 EUR |
25+ | 28.86 EUR |
50+ | 27.24 EUR |
100+ | 25.64 EUR |
240+ | 24.83 EUR |
480+ | 23.23 EUR |
IMZA65R040M2HXKSA1 |
Hersteller: Infineon Technologies
MOSFET SILICON CARBIDE MOSFET
MOSFET SILICON CARBIDE MOSFET
auf Bestellung 464 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 20.17 EUR |
10+ | 17.76 EUR |
25+ | 17.28 EUR |
50+ | 16.32 EUR |
100+ | 15.36 EUR |
240+ | 14.85 EUR |
480+ | 13.92 EUR |
IMZA65R050M2HXKSA1 |
Hersteller: Infineon Technologies
MOSFET SILICON CARBIDE MOSFET
MOSFET SILICON CARBIDE MOSFET
auf Bestellung 448 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 19.1 EUR |
10+ | 16.37 EUR |
25+ | 14.85 EUR |
100+ | 13.66 EUR |
240+ | 12.83 EUR |
480+ | 12.04 EUR |
1200+ | 10.82 EUR |
IMZA75R016M1HXKSA1 |
Hersteller: Infineon Technologies
MOSFET SILICON CARBIDE MOSFET
MOSFET SILICON CARBIDE MOSFET
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 42.12 EUR |
10+ | 37.42 EUR |
25+ | 34.92 EUR |
50+ | 33.81 EUR |
100+ | 32.74 EUR |
240+ | 30.52 EUR |
480+ | 28.07 EUR |
IRFP064NPBF |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 110A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 59A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Description: MOSFET N-CH 55V 110A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 59A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 2331 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.52 EUR |
25+ | 3.57 EUR |
100+ | 3.06 EUR |
500+ | 2.72 EUR |
1000+ | 2.33 EUR |
2000+ | 2.19 EUR |
IRFP240PBF |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 12A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 200V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 12A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 1563 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.68 EUR |
25+ | 3.76 EUR |
100+ | 3.09 EUR |
500+ | 2.62 EUR |
1000+ | 2.22 EUR |
IRFP250NPBF |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 18A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2159 pF @ 25 V
Description: MOSFET N-CH 200V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 18A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2159 pF @ 25 V
auf Bestellung 8163 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.77 EUR |
25+ | 3.77 EUR |
100+ | 3.23 EUR |
500+ | 2.87 EUR |
1000+ | 2.46 EUR |
2000+ | 2.32 EUR |
5000+ | 2.22 EUR |
IRFP260MPBF |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 50A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 28A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4057 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 200V 50A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 28A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4057 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 6445 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.45 EUR |
25+ | 3.52 EUR |
100+ | 3.02 EUR |
500+ | 2.68 EUR |
1000+ | 2.3 EUR |
2000+ | 2.16 EUR |
5000+ | 2.08 EUR |
IRFP3206PBF |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V
Description: MOSFET N-CH 60V 120A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V
auf Bestellung 10098 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.76 EUR |
25+ | 4.56 EUR |
100+ | 3.91 EUR |
500+ | 3.48 EUR |
1000+ | 2.98 EUR |
2000+ | 2.8 EUR |
5000+ | 2.69 EUR |
IRFP350PBF |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 9.6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 400V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 9.6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 1125 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.05 EUR |
25+ | 4.79 EUR |
100+ | 4.11 EUR |
500+ | 3.65 EUR |
1000+ | 3.12 EUR |
IRFP3710PBF |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 57A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Description: MOSFET N-CH 100V 57A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 11699 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.66 EUR |
25+ | 3.69 EUR |
100+ | 3.16 EUR |
500+ | 2.81 EUR |
1000+ | 2.41 EUR |
2000+ | 2.27 EUR |
5000+ | 2.17 EUR |
IRFP450PBF |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 500V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 1135 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.61 EUR |
25+ | 4.45 EUR |
100+ | 3.82 EUR |
500+ | 3.39 EUR |
1000+ | 2.9 EUR |
IRFP9140PBF |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET P-CH 100V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 2116 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.7 EUR |
25+ | 3.72 EUR |
100+ | 3.19 EUR |
500+ | 2.84 EUR |
1000+ | 2.43 EUR |
2000+ | 2.29 EUR |
IXYH30N120C4H1 |
Hersteller: IXYS
IGBT Transistors IXYH30N120C4H1
IGBT Transistors IXYH30N120C4H1
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 13.76 EUR |
10+ | 11.81 EUR |
30+ | 10.68 EUR |
120+ | 9.82 EUR |
270+ | 9.24 EUR |
510+ | 8.68 EUR |
1020+ | 7.81 EUR |
IXYH40N120B4H1 |
Hersteller: IXYS
IGBT Transistors IXYH40N120B4H1
IGBT Transistors IXYH40N120B4H1
auf Bestellung 373 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 15.33 EUR |
10+ | 13.15 EUR |
30+ | 11.92 EUR |
120+ | 10.95 EUR |
270+ | 10.31 EUR |
510+ | 9.66 EUR |
1020+ | 8.69 EUR |
IXYH40N120C4H1 |
Hersteller: IXYS
IGBT Transistors IXYH40N120C4H1
IGBT Transistors IXYH40N120C4H1
auf Bestellung 366 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 15.33 EUR |
10+ | 13.15 EUR |
30+ | 11.92 EUR |
120+ | 10.95 EUR |
270+ | 10.31 EUR |
510+ | 9.66 EUR |
1020+ | 8.69 EUR |
IXYH55N120B4H1 |
Hersteller: IXYS
IGBT Transistors IXYH55N120B4H1
IGBT Transistors IXYH55N120B4H1
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 17.71 EUR |
10+ | 15.19 EUR |
30+ | 13.76 EUR |
120+ | 12.64 EUR |
270+ | 11.9 EUR |
510+ | 11.14 EUR |
1020+ | 10.03 EUR |
MAX03-HNG |
Hersteller: BOYD
Description: BOYD - MAX03-HNG - HIGH FORCE RAIL CLIP, 18MM, TO247
tariffCode: 76169990
productTraceability: No
Befestigungsart: Rail Clip
rohsCompliant: YES
Außenlänge: 14.7mm
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
Zur Verwendung mit: TO-247/MAX247, TO-247J Packages
usEccn: EAR99
Außenbreite: 18mm
Produktpalette: Max Clip System Series
SVHC: No SVHC (15-Jan-2019)
Description: BOYD - MAX03-HNG - HIGH FORCE RAIL CLIP, 18MM, TO247
tariffCode: 76169990
productTraceability: No
Befestigungsart: Rail Clip
rohsCompliant: YES
Außenlänge: 14.7mm
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
Zur Verwendung mit: TO-247/MAX247, TO-247J Packages
usEccn: EAR99
Außenbreite: 18mm
Produktpalette: Max Clip System Series
SVHC: No SVHC (15-Jan-2019)
auf Bestellung 1919 Stücke:
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