Produkte > SEMIKRON DANFOSS > Alle Produkte des Herstellers SEMIKRON DANFOSS (2530) > Seite 2 nach 43
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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P6KE16A | SEMIKRON DANFOSS |
![]() ![]() ![]() ![]() ![]() Description: Diode: TVS; 600W; 16V; 28A; unidirectional; DO15 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13.6V Breakdown voltage: 16V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 5µA Max. forward impulse current: 28A |
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P6KE16CA | SEMIKRON DANFOSS |
![]() ![]() ![]() ![]() ![]() ![]() Description: Diode: TVS; 27A; bidirectional; DO15; 600W Type of diode: TVS Max. off-state voltage: 13.6V Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1mA Peak pulse power dissipation: 0.6kW Max. forward impulse current: 27A |
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P6KE33A | SEMIKRON DANFOSS |
![]() Description: Diode: TVS; 600W; 33V; 13.2A; unidirectional; DO15 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.2A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 5µA |
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P6KE39CA | SEMIKRON DANFOSS |
![]() Description: Diode: TVS; 39V; 11.2A; bidirectional; DO15; 600W Type of diode: TVS Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 11.2A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 0.6kW |
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P6SMB30CA | SEMIKRON DANFOSS |
![]() ![]() ![]() ![]() ![]() ![]() Description: Diode: TVS; 600W; 30V; 14.7A; bidirectional; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Breakdown voltage: 30V Max. forward impulse current: 14.7A Semiconductor structure: bidirectional Case: DO214AA Mounting: SMD Leakage current: 1µA |
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SB260 | SEMIKRON DANFOSS |
![]() ![]() Description: Diode: Schottky rectifying; THT; 60V; 2A; DO41 Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 2A Case: DO41 Capacitance: 140pF Forward voltage at If: 700mV |
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SB560 | SEMIKRON DANFOSS |
![]() ![]() ![]() ![]() Description: Diode: rectifying; THT; 60V; 5A; DO201 Type of diode: rectifying Mounting: THT Max. off-state voltage: 60V Load current: 5A Case: DO201 Forward voltage at If: 0.67V |
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SEMIX101GD066HDS 27891200 | SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Case: SEMIX®13 Electrical mounting: Press-Fit; screw Mechanical mounting: screw Application: for UPS; Inverter; photovoltaics Topology: IGBT three-phase bridge; thermistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A |
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SEMIX101GD066HDS 27891200 | SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Case: SEMIX®13 Electrical mounting: Press-Fit; screw Mechanical mounting: screw Application: for UPS; Inverter; photovoltaics Topology: IGBT three-phase bridge; thermistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Anzahl je Verpackung: 1 Stücke |
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SEMIX101GD126HDS 27890730 | SEMIKRON DANFOSS | SEMIX101GD126HDS IGBT modules |
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SEMIX101GD12E4S 27890195 | SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: SEMIX®13 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 300A Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Topology: IGBT three-phase bridge; thermistor Type of semiconductor module: IGBT |
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SEMIX101GD12E4S 27890195 | SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: SEMIX®13 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 300A Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Topology: IGBT three-phase bridge; thermistor Type of semiconductor module: IGBT Anzahl je Verpackung: 1 Stücke |
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SEMIX106GD12M7P 27896100 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit Mechanical mounting: screw Topology: IGBT three-phase bridge; thermistor Type of semiconductor module: IGBT Case: SEMiX® 6p |
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SEMIX106GD12M7P 27896100 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit Mechanical mounting: screw Topology: IGBT three-phase bridge; thermistor Type of semiconductor module: IGBT Case: SEMiX® 6p Anzahl je Verpackung: 1 Stücke |
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SEMIX106GD12T4P 27896010 | SEMIKRON DANFOSS | SEMIX106GD12T4P IGBT modules |
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SEMIX126DGL22P 27896300 | SEMIKRON DANFOSS | SEMIX126DGL22P IGBT modules |
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SEMIX151GAL12E4S 27890102 | SEMIKRON DANFOSS | SEMIX151GAL12E4S IGBT modules |
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SEMIX151GAL12VS 27890103 | SEMIKRON DANFOSS | SEMIX151GAL12VS IGBT modules |
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SEMIX151GAR12E4S 27890104 | SEMIKRON DANFOSS | SEMIX151GAR12E4S IGBT modules |
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SEMIX151GB12E4S 27890100 | SEMIKRON DANFOSS | SEMIX151GB12E4S IGBT modules |
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SEMIX151GB12VS 27890101 | SEMIKRON DANFOSS | SEMIX151GB12VS IGBT modules |
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SEMIX151GB17E4S 27892100 | SEMIKRON DANFOSS | SEMIX151GB17E4S IGBT modules |
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SEMIX151GD066HDS 27891210 | SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Case: SEMIX®13 Electrical mounting: Press-Fit; screw Mechanical mounting: screw Application: for UPS; Inverter; photovoltaics Topology: IGBT three-phase bridge; thermistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A |
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SEMIX151GD066HDS 27891210 | SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Case: SEMIX®13 Electrical mounting: Press-Fit; screw Mechanical mounting: screw Application: for UPS; Inverter; photovoltaics Topology: IGBT three-phase bridge; thermistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Anzahl je Verpackung: 1 Stücke |
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SEMIX151GD126HDS 27890731 | SEMIKRON DANFOSS | SEMIX151GD126HDS IGBT modules |
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SEMIX151GD12E4S 27890200 | SEMIKRON DANFOSS | SEMIX151GD12E4S IGBT modules |
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SEMIX151GD12VS 27890201 | SEMIKRON DANFOSS | SEMIX151GD12VS IGBT modules |
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SEMIX155MLI07E4 21919410 | SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 150A; screw Mechanical mounting: screw Electrical mounting: Press-Fit; screw Topology: thermistor; three-level inverter; single-phase Type of semiconductor module: IGBT Case: SEMiX® 5 Max. off-state voltage: 650V Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 450A Application: for UPS; Inverter; photovoltaics |
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SEMIX155MLI07E4 21919410 | SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 150A; screw Mechanical mounting: screw Electrical mounting: Press-Fit; screw Topology: thermistor; three-level inverter; single-phase Type of semiconductor module: IGBT Case: SEMiX® 5 Max. off-state voltage: 650V Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 450A Application: for UPS; Inverter; photovoltaics Anzahl je Verpackung: 1 Stücke |
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SEMIX156GD12M7P 27896110 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit Mechanical mounting: screw Topology: IGBT three-phase bridge; thermistor Type of semiconductor module: IGBT Case: SEMiX® 6p |
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SEMIX156GD12M7P 27896110 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit Mechanical mounting: screw Topology: IGBT three-phase bridge; thermistor Type of semiconductor module: IGBT Case: SEMiX® 6p Anzahl je Verpackung: 1 Stücke |
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SEMIX156GD12T4P 27896020 | SEMIKRON DANFOSS | SEMIX156GD12T4P IGBT modules |
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SEMIX186DGL16P 27896200 | SEMIKRON DANFOSS | SEMIX186DGL16P IGBT modules |
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SEMIX191KD16S 27890812 | SEMIKRON DANFOSS | SEMIX191KD16S Diode modules |
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SEMIX201GD066HDS 27891220 | SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Case: SEMIX®13 Electrical mounting: Press-Fit; screw Mechanical mounting: screw Application: for UPS; Inverter; photovoltaics Topology: IGBT three-phase bridge; thermistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A |
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SEMIX201GD066HDS 27891220 | SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Case: SEMIX®13 Electrical mounting: Press-Fit; screw Mechanical mounting: screw Application: for UPS; Inverter; photovoltaics Topology: IGBT three-phase bridge; thermistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Anzahl je Verpackung: 1 Stücke |
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SEMIX202GB066HDS 27891110 | SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Collector current: 200A Pulsed collector current: 400A Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Type of semiconductor module: IGBT Case: SEMIX2S Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V |
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SEMIX202GB066HDS 27891110 | SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Collector current: 200A Pulsed collector current: 400A Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Type of semiconductor module: IGBT Case: SEMIX2S Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke |
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SEMIX202GB12E4S 27890110 | SEMIKRON DANFOSS | SEMIX202GB12E4S IGBT modules |
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SEMIX202GB12VS 27890111 | SEMIKRON DANFOSS | SEMIX202GB12VS IGBT modules |
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SEMIX202GB17E4S 27892074 | SEMIKRON DANFOSS | SEMIX202GB17E4S IGBT modules |
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SEMIX205GD12E4 21919530 | SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Mechanical mounting: screw Topology: IGBT three-phase bridge; thermistor Type of semiconductor module: IGBT Case: SEMiX® 5 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 600A Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw |
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SEMIX205GD12E4 21919530 | SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Mechanical mounting: screw Topology: IGBT three-phase bridge; thermistor Type of semiconductor module: IGBT Case: SEMiX® 5 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 600A Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Anzahl je Verpackung: 1 Stücke |
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SEMIX205MLI07E4 21919420 | SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 200A; screw Mechanical mounting: screw Electrical mounting: Press-Fit; screw Topology: thermistor; three-level inverter; single-phase Type of semiconductor module: IGBT Case: SEMiX® 5 Max. off-state voltage: 650V Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 600A Application: for UPS; Inverter; photovoltaics |
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SEMIX205MLI07E4 21919420 | SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 200A; screw Mechanical mounting: screw Electrical mounting: Press-Fit; screw Topology: thermistor; three-level inverter; single-phase Type of semiconductor module: IGBT Case: SEMiX® 5 Max. off-state voltage: 650V Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 600A Application: for UPS; Inverter; photovoltaics Anzahl je Verpackung: 1 Stücke |
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SEMIX205MLI12E4V2 27922890 | SEMIKRON DANFOSS | SEMIX205MLI12E4V2 IGBT modules |
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SEMIX205TMLI12E4B 21919470 | SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: 3-level inverter TNPC; thermistor Max. off-state voltage: 1.2kV Collector current: 200A Case: SEMiX® 5 Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Mechanical mounting: screw |
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SEMIX205TMLI12E4B 21919470 | SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: 3-level inverter TNPC; thermistor Max. off-state voltage: 1.2kV Collector current: 200A Case: SEMiX® 5 Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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SEMIX206GD12M7P 27896120 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit Mechanical mounting: screw Topology: IGBT three-phase bridge; thermistor Type of semiconductor module: IGBT Case: SEMiX® 6p |
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SEMIX206GD12M7P 27896120 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit Mechanical mounting: screw Topology: IGBT three-phase bridge; thermistor Type of semiconductor module: IGBT Case: SEMiX® 6p Anzahl je Verpackung: 1 Stücke |
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SEMIX206GD12T4P 27896030 | SEMIKRON DANFOSS | SEMIX206GD12T4P IGBT modules |
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SEMIX223GB12E4P 27895002 | SEMIKRON DANFOSS | SEMIX223GB12E4P IGBT modules |
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SEMIX223GB12M7P 27895102 | SEMIKRON DANFOSS | SEMIX223GB12M7P IGBT modules |
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SEMIX223GB17E4P 27895402 | SEMIKRON DANFOSS | SEMIX223GB17E4P IGBT modules |
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SEMIX223GD12E4C 27890208 | SEMIKRON DANFOSS | SEMIX223GD12E4C IGBT modules |
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SEMIX241DH16S 27890840 | SEMIKRON DANFOSS | SEMIX241DH16S Three phase controlled bridge rectif. |
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SEMIX245DH16 21920620 | SEMIKRON DANFOSS |
![]() Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 336A; module Type of bridge rectifier: half-controlled Max. off-state voltage: 1.6kV Load current: 336A Max. forward impulse current: 1.8kA Electrical mounting: Press-Fit; screw Leads: M6 screws Case: SEMiX® 5 Version: module Mechanical mounting: screw Max. forward voltage: 1.28V Gate current: 100mA Gate voltage: 1.65V Features of semiconductor devices: with thermistor (NTC) |
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SEMIX245DH16 21920620 | SEMIKRON DANFOSS |
![]() Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 336A; module Type of bridge rectifier: half-controlled Max. off-state voltage: 1.6kV Load current: 336A Max. forward impulse current: 1.8kA Electrical mounting: Press-Fit; screw Leads: M6 screws Case: SEMiX® 5 Version: module Mechanical mounting: screw Max. forward voltage: 1.28V Gate current: 100mA Gate voltage: 1.65V Features of semiconductor devices: with thermistor (NTC) Anzahl je Verpackung: 1 Stücke |
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SEMIX252GB126HDS 27890680 | SEMIKRON DANFOSS | SEMIX252GB126HDS IGBT modules |
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SEMIX256GD12M7P 27896130 | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit Mechanical mounting: screw Topology: IGBT three-phase bridge; thermistor Type of semiconductor module: IGBT Case: SEMiX® 6p |
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P6KE16A |
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Hersteller: SEMIKRON DANFOSS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 16V; 28A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Max. forward impulse current: 28A
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 16V; 28A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Max. forward impulse current: 28A
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P6KE16CA |
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Hersteller: SEMIKRON DANFOSS
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27A; bidirectional; DO15; 600W
Type of diode: TVS
Max. off-state voltage: 13.6V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 27A
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27A; bidirectional; DO15; 600W
Type of diode: TVS
Max. off-state voltage: 13.6V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 27A
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P6KE33A |
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Hersteller: SEMIKRON DANFOSS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 33V; 13.2A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 33V; 13.2A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
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P6KE39CA |
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Hersteller: SEMIKRON DANFOSS
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 39V; 11.2A; bidirectional; DO15; 600W
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 0.6kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 39V; 11.2A; bidirectional; DO15; 600W
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 0.6kW
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P6SMB30CA | ![]() |
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Hersteller: SEMIKRON DANFOSS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.7A; bidirectional; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 30V
Max. forward impulse current: 14.7A
Semiconductor structure: bidirectional
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.7A; bidirectional; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 30V
Max. forward impulse current: 14.7A
Semiconductor structure: bidirectional
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
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SB260 |
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Hersteller: SEMIKRON DANFOSS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 2A; DO41
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 2A
Case: DO41
Capacitance: 140pF
Forward voltage at If: 700mV
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 2A; DO41
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 2A
Case: DO41
Capacitance: 140pF
Forward voltage at If: 700mV
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SB560 |
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Hersteller: SEMIKRON DANFOSS
Category: THT Schottky diodes
Description: Diode: rectifying; THT; 60V; 5A; DO201
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 5A
Case: DO201
Forward voltage at If: 0.67V
Category: THT Schottky diodes
Description: Diode: rectifying; THT; 60V; 5A; DO201
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 5A
Case: DO201
Forward voltage at If: 0.67V
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SEMIX101GD066HDS 27891200 |
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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Case: SEMIX®13
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Topology: IGBT three-phase bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Case: SEMIX®13
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Topology: IGBT three-phase bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
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SEMIX101GD066HDS 27891200 |
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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Case: SEMIX®13
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Topology: IGBT three-phase bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Case: SEMIX®13
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Topology: IGBT three-phase bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Anzahl je Verpackung: 1 Stücke
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SEMIX101GD126HDS 27890730 |
Hersteller: SEMIKRON DANFOSS
SEMIX101GD126HDS IGBT modules
SEMIX101GD126HDS IGBT modules
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SEMIX101GD12E4S 27890195 |
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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: SEMIX®13
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 300A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: SEMIX®13
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 300A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
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SEMIX101GD12E4S 27890195 |
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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: SEMIX®13
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 300A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: SEMIX®13
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 300A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Anzahl je Verpackung: 1 Stücke
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SEMIX106GD12M7P 27896100 |
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMiX® 6p
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMiX® 6p
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SEMIX106GD12M7P 27896100 |
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMiX® 6p
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMiX® 6p
Anzahl je Verpackung: 1 Stücke
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SEMIX106GD12T4P 27896010 |
Hersteller: SEMIKRON DANFOSS
SEMIX106GD12T4P IGBT modules
SEMIX106GD12T4P IGBT modules
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SEMIX126DGL22P 27896300 |
Hersteller: SEMIKRON DANFOSS
SEMIX126DGL22P IGBT modules
SEMIX126DGL22P IGBT modules
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SEMIX151GAL12E4S 27890102 |
Hersteller: SEMIKRON DANFOSS
SEMIX151GAL12E4S IGBT modules
SEMIX151GAL12E4S IGBT modules
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SEMIX151GAL12VS 27890103 |
Hersteller: SEMIKRON DANFOSS
SEMIX151GAL12VS IGBT modules
SEMIX151GAL12VS IGBT modules
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SEMIX151GAR12E4S 27890104 |
Hersteller: SEMIKRON DANFOSS
SEMIX151GAR12E4S IGBT modules
SEMIX151GAR12E4S IGBT modules
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SEMIX151GB12E4S 27890100 |
Hersteller: SEMIKRON DANFOSS
SEMIX151GB12E4S IGBT modules
SEMIX151GB12E4S IGBT modules
Produkt ist nicht verfügbar
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SEMIX151GB12VS 27890101 |
Hersteller: SEMIKRON DANFOSS
SEMIX151GB12VS IGBT modules
SEMIX151GB12VS IGBT modules
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SEMIX151GB17E4S 27892100 |
Hersteller: SEMIKRON DANFOSS
SEMIX151GB17E4S IGBT modules
SEMIX151GB17E4S IGBT modules
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SEMIX151GD066HDS 27891210 |
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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Case: SEMIX®13
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Topology: IGBT three-phase bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Case: SEMIX®13
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Topology: IGBT three-phase bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Produkt ist nicht verfügbar
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SEMIX151GD066HDS 27891210 |
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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Case: SEMIX®13
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Topology: IGBT three-phase bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Case: SEMIX®13
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Topology: IGBT three-phase bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Anzahl je Verpackung: 1 Stücke
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SEMIX151GD126HDS 27890731 |
Hersteller: SEMIKRON DANFOSS
SEMIX151GD126HDS IGBT modules
SEMIX151GD126HDS IGBT modules
Produkt ist nicht verfügbar
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SEMIX151GD12E4S 27890200 |
Hersteller: SEMIKRON DANFOSS
SEMIX151GD12E4S IGBT modules
SEMIX151GD12E4S IGBT modules
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SEMIX151GD12VS 27890201 |
Hersteller: SEMIKRON DANFOSS
SEMIX151GD12VS IGBT modules
SEMIX151GD12VS IGBT modules
Produkt ist nicht verfügbar
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SEMIX155MLI07E4 21919410 |
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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 150A; screw
Mechanical mounting: screw
Electrical mounting: Press-Fit; screw
Topology: thermistor; three-level inverter; single-phase
Type of semiconductor module: IGBT
Case: SEMiX® 5
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 450A
Application: for UPS; Inverter; photovoltaics
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 150A; screw
Mechanical mounting: screw
Electrical mounting: Press-Fit; screw
Topology: thermistor; three-level inverter; single-phase
Type of semiconductor module: IGBT
Case: SEMiX® 5
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 450A
Application: for UPS; Inverter; photovoltaics
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SEMIX155MLI07E4 21919410 |
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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 150A; screw
Mechanical mounting: screw
Electrical mounting: Press-Fit; screw
Topology: thermistor; three-level inverter; single-phase
Type of semiconductor module: IGBT
Case: SEMiX® 5
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 450A
Application: for UPS; Inverter; photovoltaics
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 150A; screw
Mechanical mounting: screw
Electrical mounting: Press-Fit; screw
Topology: thermistor; three-level inverter; single-phase
Type of semiconductor module: IGBT
Case: SEMiX® 5
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 450A
Application: for UPS; Inverter; photovoltaics
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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SEMIX156GD12M7P 27896110 |
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMiX® 6p
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMiX® 6p
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SEMIX156GD12M7P 27896110 |
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMiX® 6p
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMiX® 6p
Anzahl je Verpackung: 1 Stücke
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SEMIX156GD12T4P 27896020 |
Hersteller: SEMIKRON DANFOSS
SEMIX156GD12T4P IGBT modules
SEMIX156GD12T4P IGBT modules
Produkt ist nicht verfügbar
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SEMIX186DGL16P 27896200 |
Hersteller: SEMIKRON DANFOSS
SEMIX186DGL16P IGBT modules
SEMIX186DGL16P IGBT modules
Produkt ist nicht verfügbar
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SEMIX191KD16S 27890812 |
Hersteller: SEMIKRON DANFOSS
SEMIX191KD16S Diode modules
SEMIX191KD16S Diode modules
Produkt ist nicht verfügbar
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SEMIX201GD066HDS 27891220 |
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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Case: SEMIX®13
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Topology: IGBT three-phase bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Case: SEMIX®13
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Topology: IGBT three-phase bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Produkt ist nicht verfügbar
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SEMIX201GD066HDS 27891220 |
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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Case: SEMIX®13
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Topology: IGBT three-phase bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Case: SEMIX®13
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Topology: IGBT three-phase bridge; thermistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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SEMIX202GB066HDS 27891110 |
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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Pulsed collector current: 400A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMIX2S
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Pulsed collector current: 400A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMIX2S
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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SEMIX202GB066HDS 27891110 |
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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Pulsed collector current: 400A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMIX2S
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Pulsed collector current: 400A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMIX2S
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
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SEMIX202GB12E4S 27890110 |
Hersteller: SEMIKRON DANFOSS
SEMIX202GB12E4S IGBT modules
SEMIX202GB12E4S IGBT modules
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SEMIX202GB12VS 27890111 |
Hersteller: SEMIKRON DANFOSS
SEMIX202GB12VS IGBT modules
SEMIX202GB12VS IGBT modules
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SEMIX202GB17E4S 27892074 |
Hersteller: SEMIKRON DANFOSS
SEMIX202GB17E4S IGBT modules
SEMIX202GB17E4S IGBT modules
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SEMIX205GD12E4 21919530 |
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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMiX® 5
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMiX® 5
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
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SEMIX205GD12E4 21919530 |
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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMiX® 5
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMiX® 5
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Anzahl je Verpackung: 1 Stücke
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SEMIX205MLI07E4 21919420 |
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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 200A; screw
Mechanical mounting: screw
Electrical mounting: Press-Fit; screw
Topology: thermistor; three-level inverter; single-phase
Type of semiconductor module: IGBT
Case: SEMiX® 5
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Application: for UPS; Inverter; photovoltaics
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 200A; screw
Mechanical mounting: screw
Electrical mounting: Press-Fit; screw
Topology: thermistor; three-level inverter; single-phase
Type of semiconductor module: IGBT
Case: SEMiX® 5
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Application: for UPS; Inverter; photovoltaics
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SEMIX205MLI07E4 21919420 |
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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 200A; screw
Mechanical mounting: screw
Electrical mounting: Press-Fit; screw
Topology: thermistor; three-level inverter; single-phase
Type of semiconductor module: IGBT
Case: SEMiX® 5
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Application: for UPS; Inverter; photovoltaics
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 200A; screw
Mechanical mounting: screw
Electrical mounting: Press-Fit; screw
Topology: thermistor; three-level inverter; single-phase
Type of semiconductor module: IGBT
Case: SEMiX® 5
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Application: for UPS; Inverter; photovoltaics
Anzahl je Verpackung: 1 Stücke
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SEMIX205MLI12E4V2 27922890 |
Hersteller: SEMIKRON DANFOSS
SEMIX205MLI12E4V2 IGBT modules
SEMIX205MLI12E4V2 IGBT modules
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SEMIX205TMLI12E4B 21919470 |
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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: 3-level inverter TNPC; thermistor
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: SEMiX® 5
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: 3-level inverter TNPC; thermistor
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: SEMiX® 5
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
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SEMIX205TMLI12E4B 21919470 |
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Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: 3-level inverter TNPC; thermistor
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: SEMiX® 5
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: 3-level inverter TNPC; thermistor
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: SEMiX® 5
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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SEMIX206GD12M7P 27896120 |
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMiX® 6p
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMiX® 6p
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SEMIX206GD12M7P 27896120 |
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMiX® 6p
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMiX® 6p
Anzahl je Verpackung: 1 Stücke
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SEMIX206GD12T4P 27896030 |
Hersteller: SEMIKRON DANFOSS
SEMIX206GD12T4P IGBT modules
SEMIX206GD12T4P IGBT modules
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SEMIX223GB12E4P 27895002 |
Hersteller: SEMIKRON DANFOSS
SEMIX223GB12E4P IGBT modules
SEMIX223GB12E4P IGBT modules
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SEMIX223GB12M7P 27895102 |
Hersteller: SEMIKRON DANFOSS
SEMIX223GB12M7P IGBT modules
SEMIX223GB12M7P IGBT modules
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SEMIX223GB17E4P 27895402 |
Hersteller: SEMIKRON DANFOSS
SEMIX223GB17E4P IGBT modules
SEMIX223GB17E4P IGBT modules
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SEMIX223GD12E4C 27890208 |
Hersteller: SEMIKRON DANFOSS
SEMIX223GD12E4C IGBT modules
SEMIX223GD12E4C IGBT modules
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SEMIX241DH16S 27890840 |
Hersteller: SEMIKRON DANFOSS
SEMIX241DH16S Three phase controlled bridge rectif.
SEMIX241DH16S Three phase controlled bridge rectif.
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SEMIX245DH16 21920620 |
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Hersteller: SEMIKRON DANFOSS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 336A; module
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 336A
Max. forward impulse current: 1.8kA
Electrical mounting: Press-Fit; screw
Leads: M6 screws
Case: SEMiX® 5
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.28V
Gate current: 100mA
Gate voltage: 1.65V
Features of semiconductor devices: with thermistor (NTC)
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 336A; module
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 336A
Max. forward impulse current: 1.8kA
Electrical mounting: Press-Fit; screw
Leads: M6 screws
Case: SEMiX® 5
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.28V
Gate current: 100mA
Gate voltage: 1.65V
Features of semiconductor devices: with thermistor (NTC)
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SEMIX245DH16 21920620 |
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Hersteller: SEMIKRON DANFOSS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 336A; module
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 336A
Max. forward impulse current: 1.8kA
Electrical mounting: Press-Fit; screw
Leads: M6 screws
Case: SEMiX® 5
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.28V
Gate current: 100mA
Gate voltage: 1.65V
Features of semiconductor devices: with thermistor (NTC)
Anzahl je Verpackung: 1 Stücke
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 336A; module
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 336A
Max. forward impulse current: 1.8kA
Electrical mounting: Press-Fit; screw
Leads: M6 screws
Case: SEMiX® 5
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.28V
Gate current: 100mA
Gate voltage: 1.65V
Features of semiconductor devices: with thermistor (NTC)
Anzahl je Verpackung: 1 Stücke
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SEMIX252GB126HDS 27890680 |
Hersteller: SEMIKRON DANFOSS
SEMIX252GB126HDS IGBT modules
SEMIX252GB126HDS IGBT modules
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SEMIX256GD12M7P 27896130 |
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMiX® 6p
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMiX® 6p
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