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SIA413ADJ-T1-GE3 SIA413ADJ-T1-GE3 Vishay Siliconix sia413adj.pdf Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
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SiA445EDJT-T1-GE3 SiA445EDJT-T1-GE3 Vishay Siliconix sia445edjt.pdf Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 16.7mOhm @ 7A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 10 V
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SIC779ACD-T1-GE3 SIC779ACD-T1-GE3 Vishay Siliconix Description: IC HALF BRIDGE DRIVER 35A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 35A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
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SIHB23N60E-GE3 SIHB23N60E-GE3 Vishay Siliconix sihb23n60e.pdf Description: MOSFET N-CH 600V 23A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
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SIHB33N60ET1-GE3 SIHB33N60ET1-GE3 Vishay Siliconix sihb33n60e.pdf Description: MOSFET N-CH 600V 33A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
Produkt ist nicht verfügbar
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SIHD5N50D-E3 SIHD5N50D-E3 Vishay Siliconix sihd5n50d.pdf Description: MOSFET N-CH 500V 5.3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Produkt ist nicht verfügbar
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SIHF12N50C-E3 SIHF12N50C-E3 Vishay Siliconix sihp12n5.pdf Description: MOSFET N-CH 500V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
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SiHF7N60E-GE3 SiHF7N60E-GE3 Vishay Siliconix sihf7n60e.pdf Description: MOSFET N-CHANNEL 600V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Produkt ist nicht verfügbar
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SIHP16N50C-E3 SIHP16N50C-E3 Vishay Siliconix sihp16n5.pdf Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar
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SiHP23N60E-GE3 SiHP23N60E-GE3 Vishay Siliconix sihp23n60e.pdf Description: MOSFET N-CH 600V 23A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
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SIHP25N40D-E3 SIHP25N40D-E3 Vishay Siliconix sihp25n40d.pdf Description: MOSFET N-CH 400V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V
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SIHU6N62E-GE3 SIHU6N62E-GE3 Vishay Siliconix sihu6n62e.pdf Description: MOSFET N-CH 620V 6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V
Produkt ist nicht verfügbar
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SIR158DP-T1-RE3 SIR158DP-T1-RE3 Vishay Siliconix sir158dp.pdf Description: MOSFET N-CH 30V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V
auf Bestellung 524 Stücke:
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SIR870ADP-T1-RE3 SIR870ADP-T1-RE3 Vishay Siliconix sir870adp.pdf Description: MOSFET N-CH 100V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
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SIRA90DP-T1-RE3 SIRA90DP-T1-RE3 Vishay Siliconix sira90dp.pdf Description: MOSFET N-CH 30V 100A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
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500+1.52 EUR
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SIZ988DT-T1-GE3 SIZ988DT-T1-GE3 Vishay Siliconix siz988dt.pdf Description: MOSFET 2 N-CH 30V 8-POWERPAIR
Part Status: Active
Supplier Device Package: 8-PowerPair®
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, 23.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 2425pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 20.2W, 40W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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SQ4532AEY-T1_GE3 SQ4532AEY-T1_GE3 Vishay Siliconix sq4532aey.pdf Description: MOSFET N/P-CH 30V 7.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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25+0.88 EUR
100+0.77 EUR
250+0.71 EUR
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SQD19P06-60L_T4GE3 SQD19P06-60L_T4GE3 Vishay Siliconix sqd19p06.pdf Description: MOSFET P-CH 60V 20A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 19A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Qualification: AEC-Q101
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SQD25N06-22L_T4GE3 SQD25N06-22L_T4GE3 Vishay Siliconix sqd25n06-22l.pdf Description: MOSFET N-CH 60V 25A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQD30N05-20L_GE3 SQD30N05-20L_GE3 Vishay Siliconix sqd30n05-20l.pdf Description: MOSFET N-CH 55V 30A TO252AA
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 3235 Stücke:
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500+1.36 EUR
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SQD40N10-25_GE3 SQD40N10-25_GE3 Vishay Siliconix sqd40n10-25.pdf Description: MOSFET N-CH 100V 40A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
Qualification: AEC-Q101
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SQD50N04-5M6L_GE3 SQD50N04-5M6L_GE3 Vishay Siliconix sqd50n04-5m6l.pdf Description: MOSFET N-CH 40V 50A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Qualification: AEC-Q101
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SQD50P03-07_GE3 SQD50P03-07_GE3 Vishay Siliconix sqd50p03.pdf Description: MOSFET P-CH 30V 50A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 25 V
Produkt ist nicht verfügbar
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SQD97N06-6m3L_GE3 SQD97N06-6m3L_GE3 Vishay Siliconix sqd97n06-6m3l.pdf Description: MOSFET N-CH 60V 97A TO252AA
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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SQJ848EP-T1_GE3 SQJ848EP-T1_GE3 Vishay Siliconix SQJ848EP.pdf Description: MOSFET N-CH 40V 47A POWERPAKSO-8
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SQJ910AEP-T1_GE3 SQJ910AEP-T1_GE3 Vishay Siliconix sqj910aep.pdf Description: MOSFET 2N-CH 30V 30A PPAK SO8
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 48W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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SQJ956EP-T1_GE3 SQJ956EP-T1_GE3 Vishay Siliconix sqj956ep.pdf Description: MOSFET 2 N-CH 60V POWERPAK SO8
Power - Max: 34W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 26.7mOhm @ 5.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1395pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 60V
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SQM110N05-06L_GE3 SQM110N05-06L_GE3 Vishay Siliconix doc?68838 Description: MOSFET N-CH 55V 110A TO263
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Qualification: AEC-Q101
Grade: Automotive
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SQM120N02-1M3L_GE3 SQM120N02-1M3L_GE3 Vishay Siliconix sqm120n02-1m3l.pdf Description: MOSFET N-CH 20V 120A TO263
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SQM120P10_10M1LGE3 SQM120P10_10M1LGE3 Vishay Siliconix sqm120p10-10m1l.pdf Description: MOSFET P-CH 100V 120A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 10.1mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SQM200N04-1m7L_GE3 SQM200N04-1m7L_GE3 Vishay Siliconix sqm200n04-1m7l.pdf Description: MOSFET N-CH 40V 200A TO263-7
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 11168 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 291 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SQM40N10-30_GE3 SQM40N10-30_GE3 Vishay Siliconix sqm40n10-30.pdf Description: MOSFET N-CH 100V 40A TO263
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3345 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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SQM40N15-38_GE3 SQM40N15-38_GE3 Vishay Siliconix sqm40n15-38.pdf Description: MOSFET N-CH 150V 40A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 15A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQM40P10-40L_GE3 SQM40P10-40L_GE3 Vishay Siliconix sqm40p10.pdf Description: MOSFET P-CH 100V 40A TO263
Input Capacitance (Ciss) (Max) @ Vds: 5295 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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SQM50N04-4m1_GE3 SQM50N04-4m1_GE3 Vishay Siliconix sqm50n044m1.pdf Description: MOSFET N-CH 40V 50A TO263
Input Capacitance (Ciss) (Max) @ Vds: 6715 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SQM50P04-09L_GE3 SQM50P04-09L_GE3 Vishay Siliconix sqm50p04.pdf Description: MOSFET P-CHANNEL 40V 50A TO263
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6045 pF @ 10 V
Qualification: AEC-Q101
Grade: Automotive
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SQM85N15-19_GE3 SQM85N15-19_GE3 Vishay Siliconix sqm85n15-19.pdf Description: MOSFET N-CH 150V 85A TO263
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6285 pF @ 25 V
Produkt ist nicht verfügbar
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SQP100P06-9M3L_GE3 SQP100P06-9M3L_GE3 Vishay Siliconix sqm100p06-9m3l.pdf Description: MOSFET P-CH 60V 100A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 12010 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 187W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SQP120N06-06_GE3 SQP120N06-06_GE3 Vishay Siliconix sqp120n06-06.pdf Description: MOSFET N-CH 60V 119A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQP120N06-3m5L_GE3 SQP120N06-3m5L_GE3 Vishay Siliconix sqp120n06-3m5l.pdf Description: MOSFET N-CH 60V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14700 pF @ 25 V
Qualification: AEC-Q101
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SQP120N10-09_GE3 SQP120N10-09_GE3 Vishay Siliconix sqp120n10-09.pdf Description: MOSFET N-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8645 pF @ 25 V
Qualification: AEC-Q101
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SQP50P03-07_GE3 SQP50P03-07_GE3 Vishay Siliconix sqp50p0307.pdf Description: MOSFET P-CH 30V 50A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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SQP60N06-15_GE3 SQP60N06-15_GE3 Vishay Siliconix sqp60n06-15.pdf Description: MOSFET N-CH 60V 56A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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SQP90P06-07L_GE3 SQP90P06-07L_GE3 Vishay Siliconix sqm90p06-07l.pdf Description: MOSFET P-CH 60V 120A TO220AB
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 14280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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SQR50N04-3m8_GE3 SQR50N04-3m8_GE3 Vishay Siliconix sqr50n04-3m8.pdf Description: MOSFET N-CH 40V 50A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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SQS405EN-T1_GE3 SQS405EN-T1_GE3 Vishay Siliconix sqs405en.pdf Description: MOSFET P-CH 12V 16A PPAK1212-8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Last Time Buy
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
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SQS420EN-T1_GE3 SQS420EN-T1_GE3 Vishay Siliconix sqs420en.pdf Description: MOSFET N-CH 20V 8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V
Qualification: AEC-Q101
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DG442BDY-T1-E3 DG442BDY-T1-E3 Vishay Siliconix 72625.pdf Description: IC SWITCH QUAD SPST 16SOIC
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SIR800ADP-T1-RE3 SIR800ADP-T1-RE3 Vishay Siliconix sir800adp.pdf Description: MOSFET N-CH 20V 50.2A/177A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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SIR800ADP-T1-RE3 SIR800ADP-T1-RE3 Vishay Siliconix sir800adp.pdf Description: MOSFET N-CH 20V 50.2A/177A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
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SIA471DJ-T1-GE3 SIA471DJ-T1-GE3 Vishay Siliconix sia471dj.pdf Description: MOSFET P-CH 30V 12.9A/30.3A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 30.3A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 15 V
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SISF20DN-T1-GE3 SISF20DN-T1-GE3 Vishay Siliconix sisf20dn.pdf Description: MOSFET 2N-CH 60V 14A/52A PPAK 12
Supplier Device Package: PowerPAK® 1212-8SCD Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD Dual
Packaging: Tape & Reel (TR)
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SIA471DJ-T1-GE3 SIA471DJ-T1-GE3 Vishay Siliconix sia471dj.pdf Description: MOSFET P-CH 30V 12.9A/30.3A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 30.3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
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SISF20DN-T1-GE3 SISF20DN-T1-GE3 Vishay Siliconix sisf20dn.pdf Description: MOSFET 2N-CH 60V 14A/52A PPAK 12
Supplier Device Package: PowerPAK® 1212-8SCD Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD Dual
Packaging: Cut Tape (CT)
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SIP32432DR3-T1GE3 SIP32432DR3-T1GE3 Vishay Siliconix sip32431.pdf Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
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SIP32432DR3-T1GE3 SIP32432DR3-T1GE3 Vishay Siliconix sip32431.pdf Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
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SIHP22N60EF-GE3 SIHP22N60EF-GE3 Vishay Siliconix sihp22n60ef.pdf Description: MOSFET N-CH 600V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 11A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 100 V
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SIHA22N60EF-GE3 SIHA22N60EF-GE3 Vishay Siliconix tf-siha22n60ef-ge3.pdf Description: MOSFET N-CH 600V 19A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 11A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 100 V
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SIC467ED-T1-GE3 SIC467ED-T1-GE3 Vishay Siliconix sic46x.pdf Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 60V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 15V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
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SQUN702E-T1_GE3 SQUN702E-T1_GE3 Vishay Siliconix squn702e.pdf Description: MOSFET N&P-CH COMMON DRAIN
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SIA413ADJ-T1-GE3 sia413adj.pdf
SIA413ADJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
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SiA445EDJT-T1-GE3 sia445edjt.pdf
SiA445EDJT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 16.7mOhm @ 7A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 10 V
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SIC779ACD-T1-GE3
SIC779ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 35A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 35A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
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SIHB23N60E-GE3 sihb23n60e.pdf
SIHB23N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 23A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
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3+9.56 EUR
50+4.95 EUR
100+4.51 EUR
500+3.72 EUR
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SIHB33N60ET1-GE3 sihb33n60e.pdf
SIHB33N60ET1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
Produkt ist nicht verfügbar
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SIHD5N50D-E3 sihd5n50d.pdf
SIHD5N50D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5.3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Produkt ist nicht verfügbar
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SIHF12N50C-E3 sihp12n5.pdf
SIHF12N50C-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
auf Bestellung 855 Stücke:
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2+10.81 EUR
50+5.7 EUR
100+5.21 EUR
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SiHF7N60E-GE3 sihf7n60e.pdf
SiHF7N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 600V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Produkt ist nicht verfügbar
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SIHP16N50C-E3 sihp16n5.pdf
SIHP16N50C-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar
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SiHP23N60E-GE3 sihp23n60e.pdf
SiHP23N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 23A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
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SIHP25N40D-E3 sihp25n40d.pdf
SIHP25N40D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V
auf Bestellung 61 Stücke:
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4+6.31 EUR
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SIHU6N62E-GE3 sihu6n62e.pdf
SIHU6N62E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 620V 6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V
Produkt ist nicht verfügbar
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SIR158DP-T1-RE3 sir158dp.pdf
SIR158DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V
auf Bestellung 524 Stücke:
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5+4.49 EUR
10+2.88 EUR
100+1.98 EUR
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SIR870ADP-T1-RE3 sir870adp.pdf
SIR870ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 2568 Stücke:
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5+4.65 EUR
10+3.46 EUR
100+2.42 EUR
500+2.01 EUR
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SIRA90DP-T1-RE3 sira90dp.pdf
SIRA90DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 100A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 7764 Stücke:
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6+3.53 EUR
10+2.44 EUR
100+1.92 EUR
500+1.52 EUR
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SIZ988DT-T1-GE3 siz988dt.pdf
SIZ988DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 30V 8-POWERPAIR
Part Status: Active
Supplier Device Package: 8-PowerPair®
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, 23.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 2425pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 20.2W, 40W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 10248 Stücke:
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8+2.68 EUR
10+2.4 EUR
100+1.87 EUR
500+1.55 EUR
1000+1.23 EUR
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SQ4532AEY-T1_GE3 sq4532aey.pdf
SQ4532AEY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 7.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1017 Stücke:
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16+1.36 EUR
22+0.98 EUR
25+0.88 EUR
100+0.77 EUR
250+0.71 EUR
500+0.69 EUR
1000+0.65 EUR
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SQD19P06-60L_T4GE3 sqd19p06.pdf
SQD19P06-60L_T4GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 20A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 19A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5345 Stücke:
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5+4.27 EUR
10+2.73 EUR
100+1.86 EUR
500+1.48 EUR
1000+1.36 EUR
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SQD25N06-22L_T4GE3 sqd25n06-22l.pdf
SQD25N06-22L_T4GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 25A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQD30N05-20L_GE3 sqd30n05-20l.pdf
SQD30N05-20L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 30A TO252AA
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 3235 Stücke:
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AnzahlPrivatkunde
7+3.22 EUR
10+2.48 EUR
100+1.7 EUR
500+1.36 EUR
1000+1.3 EUR
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SQD40N10-25_GE3 sqd40n10-25.pdf
SQD40N10-25_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2502 Stücke:
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AnzahlPrivatkunde
2+12.59 EUR
10+8.5 EUR
100+6.31 EUR
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SQD50N04-5M6L_GE3 sqd50n04-5m6l.pdf
SQD50N04-5M6L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4099 Stücke:
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AnzahlPrivatkunde
6+3.72 EUR
10+2.38 EUR
100+1.59 EUR
500+1.26 EUR
1000+1.15 EUR
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SQD50P03-07_GE3 sqd50p03.pdf
SQD50P03-07_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 25 V
Produkt ist nicht verfügbar
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SQD97N06-6m3L_GE3 sqd97n06-6m3l.pdf
SQD97N06-6m3L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 97A TO252AA
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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SQJ848EP-T1_GE3 SQJ848EP.pdf
SQJ848EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 47A POWERPAKSO-8
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SQJ910AEP-T1_GE3 sqj910aep.pdf
SQJ910AEP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 30A PPAK SO8
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 48W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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SQJ956EP-T1_GE3 sqj956ep.pdf
SQJ956EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 60V POWERPAK SO8
Power - Max: 34W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 26.7mOhm @ 5.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1395pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 60V
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SQM110N05-06L_GE3 doc?68838
SQM110N05-06L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 110A TO263
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Qualification: AEC-Q101
Grade: Automotive
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SQM120N02-1M3L_GE3 sqm120n02-1m3l.pdf
SQM120N02-1M3L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 120A TO263
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SQM120P10_10M1LGE3 sqm120p10-10m1l.pdf
SQM120P10_10M1LGE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 120A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 10.1mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8146 Stücke:
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SQM200N04-1m7L_GE3 sqm200n04-1m7l.pdf
SQM200N04-1m7L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A TO263-7
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 11168 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 291 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SQM40N10-30_GE3 sqm40n10-30.pdf
SQM40N10-30_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO263
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3345 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
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SQM40N15-38_GE3 sqm40n15-38.pdf
SQM40N15-38_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 40A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 15A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQM40P10-40L_GE3 sqm40p10.pdf
SQM40P10-40L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 40A TO263
Input Capacitance (Ciss) (Max) @ Vds: 5295 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4805 Stücke:
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10+4.24 EUR
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SQM50N04-4m1_GE3 sqm50n044m1.pdf
SQM50N04-4m1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO263
Input Capacitance (Ciss) (Max) @ Vds: 6715 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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SQM50P04-09L_GE3 sqm50p04.pdf
SQM50P04-09L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 40V 50A TO263
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6045 pF @ 10 V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1466 Stücke:
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5+4.71 EUR
10+3.92 EUR
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SQM85N15-19_GE3 sqm85n15-19.pdf
SQM85N15-19_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 85A TO263
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6285 pF @ 25 V
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SQP100P06-9M3L_GE3 sqm100p06-9m3l.pdf
SQP100P06-9M3L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 100A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 12010 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 187W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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SQP120N06-06_GE3 sqp120n06-06.pdf
SQP120N06-06_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 119A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 25 V
Qualification: AEC-Q101
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SQP120N06-3m5L_GE3 sqp120n06-3m5l.pdf
SQP120N06-3m5L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14700 pF @ 25 V
Qualification: AEC-Q101
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SQP120N10-09_GE3 sqp120n10-09.pdf
SQP120N10-09_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8645 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 213 Stücke:
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3+7.03 EUR
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SQP50P03-07_GE3 sqp50p0307.pdf
SQP50P03-07_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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SQP60N06-15_GE3 sqp60n06-15.pdf
SQP60N06-15_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 56A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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SQP90P06-07L_GE3 sqm90p06-07l.pdf
SQP90P06-07L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 120A TO220AB
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 14280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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SQR50N04-3m8_GE3 sqr50n04-3m8.pdf
SQR50N04-3m8_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SQS405EN-T1_GE3 sqs405en.pdf
SQS405EN-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 16A PPAK1212-8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Last Time Buy
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
auf Bestellung 20778 Stücke:
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AnzahlPrivatkunde
11+2.03 EUR
13+1.67 EUR
100+1.3 EUR
500+1.09 EUR
1000+0.89 EUR
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SQS420EN-T1_GE3 sqs420en.pdf
SQS420EN-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9570 Stücke:
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8+2.95 EUR
12+1.87 EUR
100+1.24 EUR
500+0.98 EUR
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DG442BDY-T1-E3 72625.pdf
DG442BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
auf Bestellung 2428 Stücke:
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SIR800ADP-T1-RE3 sir800adp.pdf
SIR800ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50.2A/177A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIR800ADP-T1-RE3 sir800adp.pdf
SIR800ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50.2A/177A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 2911 Stücke:
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AnzahlPrivatkunde
9+2.39 EUR
14+1.5 EUR
100+0.99 EUR
500+0.77 EUR
1000+0.7 EUR
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SIA471DJ-T1-GE3 sia471dj.pdf
SIA471DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12.9A/30.3A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 30.3A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.39 EUR
6000+0.38 EUR
15000+0.36 EUR
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SISF20DN-T1-GE3 sisf20dn.pdf
SISF20DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 14A/52A PPAK 12
Supplier Device Package: PowerPAK® 1212-8SCD Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIA471DJ-T1-GE3 sia471dj.pdf
SIA471DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12.9A/30.3A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 30.3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
auf Bestellung 21767 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
30+0.7 EUR
100+0.54 EUR
500+0.46 EUR
1000+0.43 EUR
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SISF20DN-T1-GE3 sisf20dn.pdf
SISF20DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 14A/52A PPAK 12
Supplier Device Package: PowerPAK® 1212-8SCD Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD Dual
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SIP32432DR3-T1GE3 sip32431.pdf
SIP32432DR3-T1GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 12000 Stücke:
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AnzahlPrivatkunde
3000+0.55 EUR
6000+0.54 EUR
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SIP32432DR3-T1GE3 sip32431.pdf
SIP32432DR3-T1GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 13080 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.21 EUR
25+0.87 EUR
28+0.77 EUR
100+0.68 EUR
250+0.63 EUR
500+0.61 EUR
1000+0.58 EUR
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SIHP22N60EF-GE3 sihp22n60ef.pdf
SIHP22N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 11A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 100 V
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SIHA22N60EF-GE3 tf-siha22n60ef-ge3.pdf
SIHA22N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 19A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 11A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 100 V
auf Bestellung 756 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.68 EUR
10+5.72 EUR
50+4.45 EUR
100+4.05 EUR
500+3.33 EUR
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SIC467ED-T1-GE3 sic46x.pdf
SIC467ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 60V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 15V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+4.87 EUR
Mindestbestellmenge: 3000 Stücke
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SQUN702E-T1_GE3 squn702e.pdf
SQUN702E-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N&P-CH COMMON DRAIN
Produkt ist nicht verfügbar
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