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SIR165DP-T1-GE3 SIR165DP-T1-GE3 Vishay Siliconix sir165dp.pdf Description: MOSFET P-CH 30V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
Power Dissipation (Max): 69.4W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 15 V
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SISS67DN-T1-GE3 SISS67DN-T1-GE3 Vishay Siliconix siss67dn.pdf Description: MOSFET P-CH 30V 60A PPAK1212-8S
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
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SISF00DN-T1-GE3 SISF00DN-T1-GE3 Vishay Siliconix sisf00dn.pdf Description: MOSFET 2N-CH 30V 60A PWRPAK1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SCD Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 69.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD Dual
Part Status: Active
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SIR668ADP-T1-RE3 SIR668ADP-T1-RE3 Vishay Siliconix sir668adp.pdf Description: MOSFET N-CH 100V 93.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93.6A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 50 V
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SQM10250E_GE3 SQM10250E_GE3 Vishay Siliconix sqm10250e.pdf Description: MOSFET N-CH 250V 65A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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DG2001EDV-T1-GE3 DG2001EDV-T1-GE3 Vishay Siliconix dg2001e.pdf Description: IC SWITCH SPDT X 1 1.6OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 1.6Ohm
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 8pC
Crosstalk: -63dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 32ns, 26ns
Part Status: Active
Number of Circuits: 1
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DG9421EDV-T1-GE3 DG9421EDV-T1-GE3 Vishay Siliconix dg9421e.pdf Description: IC SWITCH SPST-NCX1 3.2OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 3.2Ohm
-3db Bandwidth: 161MHz
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 19pC
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 36ns, 22ns
Channel Capacitance (CS(off), CD(off)): 34pF, 36pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
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DG9422EDV-T1-GE3 DG9422EDV-T1-GE3 Vishay Siliconix dg9421e.pdf Description: IC SWITCH SPST-NOX1 3.2OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 3.2Ohm
-3db Bandwidth: 161MHz
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 19pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 36ns, 22ns
Channel Capacitance (CS(off), CD(off)): 34pF, 36pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
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SQP10250E_GE3 SQP10250E_GE3 Vishay Siliconix sqp10250e.pdf Description: MOSFET N-CH 250V 53A TO220AB
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SIHG050N60E-GE3 SIHG050N60E-GE3 Vishay Siliconix sihg050n60e.pdf Description: MOSFET N-CH 600V 51A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 23A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3459 pF @ 100 V
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DG2012EDL-T1-GE3 DG2012EDL-T1-GE3 Vishay Siliconix dg2012e.pdf Description: IC SWITCH SPDT X 1 1.6OHM SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 1.6Ohm
-3db Bandwidth: 160MHz
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 8pC
Crosstalk: -63dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 300mOhm
Switch Time (Ton, Toff) (Max): 32ns, 28ns
Channel Capacitance (CS(off), CD(off)): 16pF
Current - Leakage (IS(off)) (Max): 5nA
Part Status: Active
Number of Circuits: 1
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DG3157EDL-T1-GE3 DG3157EDL-T1-GE3 Vishay Siliconix dg3157e.pdf Description: IC SWITCH SPDT X 1 9OHM SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 9Ohm
-3db Bandwidth: 580MHz
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 1.3pC
Crosstalk: -61dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 90mOhm
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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DG4599EDL-T1-GE3 DG4599EDL-T1-GE3 Vishay Siliconix dg4599e.pdf Description: IC SWITCH SPDT X 1 60OHM SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 60Ohm
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 1pC
Crosstalk: -77dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Channel Capacitance (CS(off), CD(off)): 7pF
Number of Circuits: 1
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DG9411EDL-T1-GE3 DG9411EDL-T1-GE3 Vishay Siliconix dg9411e.pdf Description: IC SWITCH SPDT X 1 8OHM SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 8Ohm
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 1pC
Crosstalk: -77dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 24ns
Channel Capacitance (CS(off), CD(off)): 7pF
Number of Circuits: 1
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SIRC06DP-T1-GE3 SIRC06DP-T1-GE3 Vishay Siliconix sirc06dp.pdf Description: MOSFET N-CH 30V
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SISC06DN-T1-GE3 SISC06DN-T1-GE3 Vishay Siliconix sisc06dn.pdf Description: MOSFET N-CH 30V 27.6A/40A PPAK
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DG2002EDL-T1-GE3 DG2002EDL-T1-GE3 Vishay Siliconix dg2002e.pdf Description: IC SWITCH SPDT X 1 8OHM SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 8Ohm
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 1pC
Crosstalk: -77dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 40mOhm (Typ)
Switch Time (Ton, Toff) (Max): 30ns, 24ns
Channel Capacitance (CS(off), CD(off)): 7pF, 7pF
Current - Leakage (IS(off)) (Max): 1.5nA
Part Status: Active
Number of Circuits: 1
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SIC638CD-T1-GE3 SIC638CD-T1-GE3 Vishay Siliconix sic638.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 5.5V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
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SIC639CD-T1-GE3 SIC639CD-T1-GE3 Vishay Siliconix sic639.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 5.5V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
Produkt ist nicht verfügbar
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SIRC06DP-T1-GE3 SIRC06DP-T1-GE3 Vishay Siliconix sirc06dp.pdf Description: MOSFET N-CH 30V
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SISC06DN-T1-GE3 SISC06DN-T1-GE3 Vishay Siliconix sisc06dn.pdf Description: MOSFET N-CH 30V 27.6A/40A PPAK
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DG2002EDL-T1-GE3 DG2002EDL-T1-GE3 Vishay Siliconix dg2002e.pdf Description: IC SWITCH SPDT X 1 8OHM SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 8Ohm
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 1pC
Crosstalk: -77dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 40mOhm (Typ)
Switch Time (Ton, Toff) (Max): 30ns, 24ns
Channel Capacitance (CS(off), CD(off)): 7pF, 7pF
Current - Leakage (IS(off)) (Max): 1.5nA
Part Status: Active
Number of Circuits: 1
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SIC638CD-T1-GE3 SIC638CD-T1-GE3 Vishay Siliconix sic638.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 5.5V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
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SIC639CD-T1-GE3 SIC639CD-T1-GE3 Vishay Siliconix sic639.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 5.5V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
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SIRC06DP-T1-GE3 SIRC06DP-T1-GE3 Vishay Siliconix sirc06dp.pdf Description: MOSFET N-CH 30V
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SIC474ED-T1-GE3 SIC474ED-T1-GE3 Vishay Siliconix SiC47x_Jul04_2018.pdf Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 50.6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
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SIC474ED-T1-GE3 SIC474ED-T1-GE3 Vishay Siliconix SiC47x_Jul04_2018.pdf Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 50.6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
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SISH106DN-T1-GE3 SISH106DN-T1-GE3 Vishay Siliconix sish106dn.pdf Description: MOSFET N-CH 20V 12.5A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
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SISH410DN-T1-GE3 SISH410DN-T1-GE3 Vishay Siliconix sish410dn.pdf Description: MOSFET N-CH 20V 22A/35A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
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SIHA240N60E-GE3 SIHA240N60E-GE3 Vishay Siliconix siha240n60e.pdf Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
Produkt ist nicht verfügbar
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SIHH120N60E-T1-GE3 SIHH120N60E-T1-GE3 Vishay Siliconix sihh120n60e.pdf Description: MOSFET N-CH 600V 24A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Produkt ist nicht verfügbar
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SIHJ240N60E-T1-GE3 SIHJ240N60E-T1-GE3 Vishay Siliconix sihj240n60e.pdf Description: MOSFET N-CH 600V 12A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
Produkt ist nicht verfügbar
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SISH106DN-T1-GE3 SISH106DN-T1-GE3 Vishay Siliconix sish106dn.pdf Description: MOSFET N-CH 20V 12.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
auf Bestellung 5606 Stücke:
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SISH410DN-T1-GE3 SISH410DN-T1-GE3 Vishay Siliconix sish410dn.pdf Description: MOSFET N-CH 20V 22A/35A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
auf Bestellung 8594 Stücke:
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SIHD240N60E-GE3 SIHD240N60E-GE3 Vishay Siliconix sihd240n60e.pdf Description: MOSFET N-CH 600V 12A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
auf Bestellung 2077 Stücke:
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SIHH120N60E-T1-GE3 SIHH120N60E-T1-GE3 Vishay Siliconix sihh120n60e.pdf Description: MOSFET N-CH 600V 24A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Produkt ist nicht verfügbar
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SIHJ240N60E-T1-GE3 SIHJ240N60E-T1-GE3 Vishay Siliconix sihj240n60e.pdf Description: MOSFET N-CH 600V 12A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
auf Bestellung 987 Stücke:
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SIHP240N60E-GE3 SIHP240N60E-GE3 Vishay Siliconix sihp240n60e.pdf Description: MOSFET N-CH 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 100 V
auf Bestellung 159 Stücke:
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SIA462DJ-T4-GE3 SIA462DJ-T4-GE3 Vishay Siliconix SIA462DJ_Mar25,2013_DS.pdf Description: MOSFET N-CH 30V SMD
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SQS415ENW-T1_GE3 SQS415ENW-T1_GE3 Vishay Siliconix sqs415enw.pdf Description: MOSFET P-CH 40V 16A PPAK1212-8W
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 12A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4825 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SQS407ENW-T1_GE3 SQS407ENW-T1_GE3 Vishay Siliconix sqs407enw.pdf Description: MOSFET P-CH 30V 16A PPAK1212-8W
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 12A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4572 pF @ 20 V
Qualification: AEC-Q101
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3000+0.66 EUR
6000+0.65 EUR
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SIR800ADP-T1-GE3 SIR800ADP-T1-GE3 Vishay Siliconix sir800adp.pdf Description: MOSFET N-CH 20V 50.2A/177A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
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SISS22DN-T1-GE3 SISS22DN-T1-GE3 Vishay Siliconix siss22dn.pdf Description: MOSFET N-CH 60V 25A/90.6A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 30 V
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6000+1.05 EUR
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SIR826BDP-T1-RE3 SIR826BDP-T1-RE3 Vishay Siliconix sir826bdp.pdf Description: MOSFET N-CH 80V 19.8A/80.8A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 80.8A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 40 V
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3000+0.94 EUR
6000+0.91 EUR
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SISS46DN-T1-GE3 SISS46DN-T1-GE3 Vishay Siliconix siss46dn.pdf Description: MOSFET N-CH 100V 12.5/45.3A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 45.3A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 50 V
auf Bestellung 3000 Stücke:
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3000+0.97 EUR
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SIHB180N60E-GE3 SIHB180N60E-GE3 Vishay Siliconix sihb180n60e.pdf Description: MOSFET N-CH 600V 19A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
Produkt ist nicht verfügbar
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SIHB35N60EF-GE3 SIHB35N60EF-GE3 Vishay Siliconix sihb35n60ef.pdf Description: MOSFET N-CH 600V 32A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V
Produkt ist nicht verfügbar
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SIHD1K4N60E-GE3 SIHD1K4N60E-GE3 Vishay Siliconix sihd1k4n60e.pdf Description: MOSFET N-CH 600V 4.2A TO252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 100 V
Produkt ist nicht verfügbar
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SIHF35N60EF-GE3 SIHF35N60EF-GE3 Vishay Siliconix sihf35n60ef.pdf Description: MOSFET N-CH 600V 32A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V
Produkt ist nicht verfügbar
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SIHG35N60EF-GE3 SIHG35N60EF-GE3 Vishay Siliconix sihg35n60ef.pdf Description: MOSFET N-CH 600V 32A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V
Produkt ist nicht verfügbar
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SIHH180N60E-T1-GE3 SIHH180N60E-T1-GE3 Vishay Siliconix sihh180n60e.pdf Description: MOSFET N-CH 600V 19A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
Produkt ist nicht verfügbar
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SQS415ENW-T1_GE3 SQS415ENW-T1_GE3 Vishay Siliconix sqs415enw.pdf Description: MOSFET P-CH 40V 16A PPAK1212-8W
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 12A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4825 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2722 Stücke:
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SQS407ENW-T1_GE3 SQS407ENW-T1_GE3 Vishay Siliconix sqs407enw.pdf Description: MOSFET P-CH 30V 16A PPAK1212-8W
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 12A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4572 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 27453 Stücke:
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SIR800ADP-T1-GE3 SIR800ADP-T1-GE3 Vishay Siliconix sir800adp.pdf Description: MOSFET N-CH 20V 50.2A/177A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
auf Bestellung 8754 Stücke:
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SISS22DN-T1-GE3 SISS22DN-T1-GE3 Vishay Siliconix siss22dn.pdf Description: MOSFET N-CH 60V 25A/90.6A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 30 V
auf Bestellung 7903 Stücke:
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SIR826BDP-T1-RE3 SIR826BDP-T1-RE3 Vishay Siliconix sir826bdp.pdf Description: MOSFET N-CH 80V 19.8A/80.8A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 80.8A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 40 V
auf Bestellung 11655 Stücke:
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SISS46DN-T1-GE3 SISS46DN-T1-GE3 Vishay Siliconix siss46dn.pdf Description: MOSFET N-CH 100V 12.5/45.3A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 45.3A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 50 V
auf Bestellung 4705 Stücke:
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SIHH180N60E-T1-GE3 SIHH180N60E-T1-GE3 Vishay Siliconix sihh180n60e.pdf Description: MOSFET N-CH 600V 19A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
Produkt ist nicht verfügbar
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SIHP180N60E-GE3 SIHP180N60E-GE3 Vishay Siliconix sihp180n60e.pdf Description: MOSFET N-CH 600V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
Produkt ist nicht verfügbar
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SIHP35N60EF-GE3 SIHP35N60EF-GE3 Vishay Siliconix sihp35n60ef.pdf Description: MOSFET N-CH 600V 32A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V
auf Bestellung 710 Stücke:
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SIR165DP-T1-GE3 sir165dp.pdf
SIR165DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
Power Dissipation (Max): 69.4W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 15 V
auf Bestellung 13196 Stücke:
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6+3.13 EUR
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SISS67DN-T1-GE3 siss67dn.pdf
SISS67DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 60A PPAK1212-8S
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
auf Bestellung 243 Stücke:
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SISF00DN-T1-GE3 sisf00dn.pdf
SISF00DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 60A PWRPAK1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SCD Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 69.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD Dual
Part Status: Active
auf Bestellung 16910 Stücke:
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6+3.38 EUR
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SIR668ADP-T1-RE3 sir668adp.pdf
SIR668ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 93.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93.6A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 50 V
auf Bestellung 6732 Stücke:
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4+5.09 EUR
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SQM10250E_GE3 sqm10250e.pdf
SQM10250E_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 65A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 16062 Stücke:
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4+5.47 EUR
10+4.1 EUR
100+2.94 EUR
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DG2001EDV-T1-GE3 dg2001e.pdf
DG2001EDV-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 1.6OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 1.6Ohm
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 8pC
Crosstalk: -63dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 32ns, 26ns
Part Status: Active
Number of Circuits: 1
auf Bestellung 1986 Stücke:
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24+0.76 EUR
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DG9421EDV-T1-GE3 dg9421e.pdf
DG9421EDV-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX1 3.2OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 3.2Ohm
-3db Bandwidth: 161MHz
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 19pC
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 36ns, 22ns
Channel Capacitance (CS(off), CD(off)): 34pF, 36pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
auf Bestellung 12299 Stücke:
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8+2.43 EUR
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DG9422EDV-T1-GE3 dg9421e.pdf
DG9422EDV-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX1 3.2OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 3.2Ohm
-3db Bandwidth: 161MHz
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 19pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 36ns, 22ns
Channel Capacitance (CS(off), CD(off)): 34pF, 36pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
auf Bestellung 5856 Stücke:
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8+2.43 EUR
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500+1.3 EUR
1000+1.26 EUR
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SQP10250E_GE3 sqp10250e.pdf
SQP10250E_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 53A TO220AB
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
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SIHG050N60E-GE3 sihg050n60e.pdf
SIHG050N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 51A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 23A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3459 pF @ 100 V
auf Bestellung 370 Stücke:
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Anzahl Preis
2+15.14 EUR
10+11.52 EUR
100+9.6 EUR
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DG2012EDL-T1-GE3 dg2012e.pdf
DG2012EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 1.6OHM SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 1.6Ohm
-3db Bandwidth: 160MHz
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 8pC
Crosstalk: -63dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 300mOhm
Switch Time (Ton, Toff) (Max): 32ns, 28ns
Channel Capacitance (CS(off), CD(off)): 16pF
Current - Leakage (IS(off)) (Max): 5nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 28315 Stücke:
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Anzahl Preis
17+1.09 EUR
23+0.77 EUR
26+0.69 EUR
100+0.6 EUR
250+0.56 EUR
500+0.54 EUR
1000+0.52 EUR
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DG3157EDL-T1-GE3 dg3157e.pdf
DG3157EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 9OHM SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 9Ohm
-3db Bandwidth: 580MHz
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 1.3pC
Crosstalk: -61dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 90mOhm
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
auf Bestellung 6504 Stücke:
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Anzahl Preis
34+0.53 EUR
49+0.36 EUR
55+0.32 EUR
100+0.28 EUR
250+0.25 EUR
500+0.24 EUR
1000+0.23 EUR
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DG4599EDL-T1-GE3 dg4599e.pdf
DG4599EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 60OHM SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 60Ohm
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 1pC
Crosstalk: -77dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Channel Capacitance (CS(off), CD(off)): 7pF
Number of Circuits: 1
auf Bestellung 3323 Stücke:
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Anzahl Preis
17+1.09 EUR
23+0.78 EUR
26+0.7 EUR
100+0.61 EUR
250+0.57 EUR
500+0.54 EUR
1000+0.52 EUR
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DG9411EDL-T1-GE3 dg9411e.pdf
DG9411EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 8OHM SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 8Ohm
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 1pC
Crosstalk: -77dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 24ns
Channel Capacitance (CS(off), CD(off)): 7pF
Number of Circuits: 1
auf Bestellung 6455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
15+1.21 EUR
25+1.02 EUR
100+0.8 EUR
250+0.7 EUR
500+0.63 EUR
1000+0.58 EUR
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SIRC06DP-T1-GE3 sirc06dp.pdf
SIRC06DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V
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SISC06DN-T1-GE3 sisc06dn.pdf
SISC06DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 27.6A/40A PPAK
auf Bestellung 3000 Stücke:
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DG2002EDL-T1-GE3 dg2002e.pdf
DG2002EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 8OHM SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 8Ohm
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 1pC
Crosstalk: -77dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 40mOhm (Typ)
Switch Time (Ton, Toff) (Max): 30ns, 24ns
Channel Capacitance (CS(off), CD(off)): 7pF, 7pF
Current - Leakage (IS(off)) (Max): 1.5nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 9000 Stücke:
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Anzahl Preis
3000+0.31 EUR
6000+0.3 EUR
Mindestbestellmenge: 3000
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SIC638CD-T1-GE3 sic638.pdf
SIC638CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 5.5V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
Produkt ist nicht verfügbar
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SIC639CD-T1-GE3 sic639.pdf
SIC639CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 5.5V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
Produkt ist nicht verfügbar
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SIRC06DP-T1-GE3 sirc06dp.pdf
SIRC06DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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SISC06DN-T1-GE3 sisc06dn.pdf
SISC06DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 27.6A/40A PPAK
auf Bestellung 2415 Stücke:
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DG2002EDL-T1-GE3 dg2002e.pdf
DG2002EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 8OHM SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 8Ohm
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 1pC
Crosstalk: -77dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 40mOhm (Typ)
Switch Time (Ton, Toff) (Max): 30ns, 24ns
Channel Capacitance (CS(off), CD(off)): 7pF, 7pF
Current - Leakage (IS(off)) (Max): 1.5nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 11850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
36+0.5 EUR
40+0.44 EUR
100+0.38 EUR
250+0.36 EUR
500+0.34 EUR
1000+0.33 EUR
Mindestbestellmenge: 25
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SIC638CD-T1-GE3 sic638.pdf
SIC638CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 5.5V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
auf Bestellung 2326 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+2.69 EUR
25+2.46 EUR
100+2.2 EUR
250+2.08 EUR
500+2.01 EUR
1000+1.95 EUR
Mindestbestellmenge: 5
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SIC639CD-T1-GE3 sic639.pdf
SIC639CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 5.5V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive, Capacitive
Part Status: Active
auf Bestellung 2301 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+2.69 EUR
25+2.46 EUR
100+2.2 EUR
250+2.08 EUR
500+2.01 EUR
1000+1.95 EUR
Mindestbestellmenge: 5
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SIRC06DP-T1-GE3 sirc06dp.pdf
SIRC06DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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SIC474ED-T1-GE3 SiC47x_Jul04_2018.pdf
SIC474ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 50.6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 12000 Stücke:
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Anzahl Preis
3000+2.6 EUR
Mindestbestellmenge: 3000
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SIC474ED-T1-GE3 SiC47x_Jul04_2018.pdf
SIC474ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BCK ADJ POWERPAK MLP55-27
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 50.6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 15074 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.32 EUR
10+3.99 EUR
25+3.66 EUR
100+3.3 EUR
250+3.13 EUR
500+3.02 EUR
1000+2.94 EUR
Mindestbestellmenge: 4
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SISH106DN-T1-GE3 sish106dn.pdf
SISH106DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12.5A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.01 EUR
Mindestbestellmenge: 3000
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SISH410DN-T1-GE3 sish410dn.pdf
SISH410DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 22A/35A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.65 EUR
6000+0.6 EUR
Mindestbestellmenge: 3000
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SIHA240N60E-GE3 siha240n60e.pdf
SIHA240N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
Produkt ist nicht verfügbar
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SIHH120N60E-T1-GE3 sihh120n60e.pdf
SIHH120N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 24A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Produkt ist nicht verfügbar
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SIHJ240N60E-T1-GE3 sihj240n60e.pdf
SIHJ240N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
Produkt ist nicht verfügbar
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SISH106DN-T1-GE3 sish106dn.pdf
SISH106DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
auf Bestellung 5606 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.7 EUR
10+2.37 EUR
100+1.61 EUR
500+1.28 EUR
1000+1.18 EUR
Mindestbestellmenge: 5
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SISH410DN-T1-GE3 sish410dn.pdf
SISH410DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 22A/35A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
auf Bestellung 8594 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.11 EUR
13+1.41 EUR
100+0.98 EUR
500+0.81 EUR
1000+0.74 EUR
Mindestbestellmenge: 9
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SIHD240N60E-GE3 sihd240n60e.pdf
SIHD240N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
auf Bestellung 2077 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.19 EUR
10+2.73 EUR
100+1.88 EUR
500+1.55 EUR
Mindestbestellmenge: 5
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SIHH120N60E-T1-GE3 sihh120n60e.pdf
SIHH120N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 24A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Produkt ist nicht verfügbar
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SIHJ240N60E-T1-GE3 sihj240n60e.pdf
SIHJ240N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
auf Bestellung 987 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.84 EUR
10+3.51 EUR
100+2.45 EUR
500+2.14 EUR
Mindestbestellmenge: 4
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SIHP240N60E-GE3 sihp240n60e.pdf
SIHP240N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 100 V
auf Bestellung 159 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.36 EUR
50+2.24 EUR
100+2.23 EUR
Mindestbestellmenge: 6
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SIA462DJ-T4-GE3 SIA462DJ_Mar25,2013_DS.pdf
SIA462DJ-T4-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V SMD
Produkt ist nicht verfügbar
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SQS415ENW-T1_GE3 sqs415enw.pdf
SQS415ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 16A PPAK1212-8W
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 12A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4825 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
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SQS407ENW-T1_GE3 sqs407enw.pdf
SQS407ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 16A PPAK1212-8W
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 12A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4572 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.66 EUR
6000+0.65 EUR
9000+0.63 EUR
Mindestbestellmenge: 3000
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SIR800ADP-T1-GE3 sir800adp.pdf
SIR800ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50.2A/177A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1 EUR
Mindestbestellmenge: 3000
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SISS22DN-T1-GE3 siss22dn.pdf
SISS22DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 25A/90.6A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.08 EUR
6000+1.05 EUR
Mindestbestellmenge: 3000
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SIR826BDP-T1-RE3 sir826bdp.pdf
SIR826BDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 19.8A/80.8A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 80.8A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 40 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.94 EUR
6000+0.91 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SISS46DN-T1-GE3 siss46dn.pdf
SISS46DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 12.5/45.3A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 45.3A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.97 EUR
Mindestbestellmenge: 3000
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SIHB180N60E-GE3 sihb180n60e.pdf
SIHB180N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 19A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
Produkt ist nicht verfügbar
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SIHB35N60EF-GE3 sihb35n60ef.pdf
SIHB35N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 32A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V
Produkt ist nicht verfügbar
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SIHD1K4N60E-GE3 sihd1k4n60e.pdf
SIHD1K4N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 4.2A TO252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 100 V
Produkt ist nicht verfügbar
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SIHF35N60EF-GE3 sihf35n60ef.pdf
SIHF35N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 32A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V
Produkt ist nicht verfügbar
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SIHG35N60EF-GE3 sihg35n60ef.pdf
SIHG35N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 32A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V
Produkt ist nicht verfügbar
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SIHH180N60E-T1-GE3 sihh180n60e.pdf
SIHH180N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 19A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
Produkt ist nicht verfügbar
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SQS415ENW-T1_GE3 sqs415enw.pdf
SQS415ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 16A PPAK1212-8W
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 12A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4825 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2722 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
13+1.43 EUR
100+1.1 EUR
500+0.86 EUR
1000+0.77 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
SQS407ENW-T1_GE3 sqs407enw.pdf
SQS407ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 16A PPAK1212-8W
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 12A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4572 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 27453 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.11 EUR
13+1.44 EUR
100+1.05 EUR
500+0.87 EUR
1000+0.76 EUR
Mindestbestellmenge: 9
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SIR800ADP-T1-GE3 sir800adp.pdf
SIR800ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50.2A/177A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
auf Bestellung 8754 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.78 EUR
10+2.1 EUR
100+1.53 EUR
500+1.22 EUR
1000+1.18 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SISS22DN-T1-GE3 siss22dn.pdf
SISS22DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 25A/90.6A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 30 V
auf Bestellung 7903 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.27 EUR
10+2.22 EUR
100+1.66 EUR
500+1.33 EUR
1000+1.22 EUR
Mindestbestellmenge: 6
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SIR826BDP-T1-RE3 sir826bdp.pdf
SIR826BDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 19.8A/80.8A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 80.8A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 40 V
auf Bestellung 11655 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.78 EUR
10+2.11 EUR
100+1.45 EUR
500+1.15 EUR
1000+1.11 EUR
Mindestbestellmenge: 7
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SISS46DN-T1-GE3 siss46dn.pdf
SISS46DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 12.5/45.3A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 45.3A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 50 V
auf Bestellung 4705 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.92 EUR
10+2.03 EUR
100+1.49 EUR
500+1.19 EUR
1000+1.15 EUR
Mindestbestellmenge: 7
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SIHH180N60E-T1-GE3 sihh180n60e.pdf
SIHH180N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 19A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHP180N60E-GE3 sihp180n60e.pdf
SIHP180N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHP35N60EF-GE3 sihp35n60ef.pdf
SIHP35N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 32A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V
auf Bestellung 710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.31 EUR
50+5.51 EUR
100+5.25 EUR
500+4.41 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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