| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCT06030F7159BPW00 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V Operating temperature: -55...155°C Resistance: 71.5Ω Tolerance: ±0.1% Power: 0.125W Roll diameter max.: 330mm Temperature coefficient: 10ppm/°C Operating voltage: 75V Case - inch: 0603 Case - mm: 1608 Version: 0 Manufacturer series: MCT0603 Type of resistor: thin film Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MCT0603MD7159BP100 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V Operating temperature: -55...175°C Resistance: 71.5Ω Tolerance: ±0.1% Power: 0.21W Roll diameter max.: 180mm Temperature coefficient: 25ppm/°C Operating voltage: 75V Quantity in set/package: 1000pcs. Case - inch: 0603 Case - mm: 1608 Version: M Conform to the norm: AEC-Q200 Manufacturer series: MCT0603 Type of resistor: thin film Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MCT0603MD7159BP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V Operating temperature: -55...175°C Resistance: 71.5Ω Tolerance: ±0.1% Power: 0.21W Roll diameter max.: 180mm Temperature coefficient: 25ppm/°C Operating voltage: 75V Case - inch: 0603 Case - mm: 1608 Version: M Conform to the norm: AEC-Q200 Manufacturer series: MCT0603 Type of resistor: thin film Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MCT0603MD7159BPW00 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V Operating temperature: -55...175°C Resistance: 71.5Ω Tolerance: ±0.1% Power: 0.21W Roll diameter max.: 330mm Temperature coefficient: 25ppm/°C Operating voltage: 75V Case - inch: 0603 Case - mm: 1608 Version: M Conform to the norm: AEC-Q200 Manufacturer series: MCT0603 Type of resistor: thin film Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MCT0603ME7159BP100 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V Operating temperature: -55...175°C Resistance: 71.5Ω Tolerance: ±0.1% Power: 0.21W Roll diameter max.: 180mm Temperature coefficient: 15ppm/°C Operating voltage: 75V Quantity in set/package: 1000pcs. Case - inch: 0603 Case - mm: 1608 Version: M Conform to the norm: AEC-Q200 Manufacturer series: MCT0603 Type of resistor: thin film Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MCT0603ME7159BP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V Operating temperature: -55...175°C Resistance: 71.5Ω Tolerance: ±0.1% Power: 0.21W Roll diameter max.: 180mm Temperature coefficient: 15ppm/°C Operating voltage: 75V Case - inch: 0603 Case - mm: 1608 Version: M Conform to the norm: AEC-Q200 Manufacturer series: MCT0603 Type of resistor: thin film Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MCT0603ME7159BPW00 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V Operating temperature: -55...175°C Resistance: 71.5Ω Tolerance: ±0.1% Power: 0.21W Roll diameter max.: 330mm Temperature coefficient: 15ppm/°C Operating voltage: 75V Case - inch: 0603 Case - mm: 1608 Version: M Conform to the norm: AEC-Q200 Manufacturer series: MCT0603 Type of resistor: thin film Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MCT0603MF7159BP100 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V Operating temperature: -55...175°C Resistance: 71.5Ω Tolerance: ±0.1% Power: 0.21W Roll diameter max.: 180mm Temperature coefficient: 10ppm/°C Operating voltage: 75V Quantity in set/package: 1000pcs. Case - inch: 0603 Case - mm: 1608 Version: M Conform to the norm: AEC-Q200 Manufacturer series: MCT0603 Type of resistor: thin film Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MCT0603MF7159BP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V Operating temperature: -55...175°C Resistance: 71.5Ω Tolerance: ±0.1% Power: 0.21W Roll diameter max.: 180mm Temperature coefficient: 10ppm/°C Operating voltage: 75V Case - inch: 0603 Case - mm: 1608 Version: M Conform to the norm: AEC-Q200 Manufacturer series: MCT0603 Type of resistor: thin film Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MCT0603MF7159BPW00 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V Operating temperature: -55...175°C Resistance: 71.5Ω Tolerance: ±0.1% Power: 0.21W Roll diameter max.: 330mm Temperature coefficient: 10ppm/°C Operating voltage: 75V Case - inch: 0603 Case - mm: 1608 Version: M Conform to the norm: AEC-Q200 Manufacturer series: MCT0603 Type of resistor: thin film Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SI8424CDB-T1-E1 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 10A; Idm: 25A; 1.8W Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Case: MICROFOOT® 1.6x1.6 Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Gate charge: 40nC On-state resistance: 20mΩ Power dissipation: 1.8W Gate-source voltage: ±5V Drain-source voltage: 8V Drain current: 10A Pulsed drain current: 25A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
GBPC3506W-E4/51 | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.1mm Features of semiconductor devices: glass passivated Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
 |
GBPC3508-E4/51 | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
 |
GBPC3506-E4/51 | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| GBPC3504W-E4/51 | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.1mm Features of semiconductor devices: glass passivated Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| 1N5242B-TR | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 500mW; 12V; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||||
| 1N5246B-TR | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 500mW; 16V; DO35 Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Case: DO35 Mounting: THT Tolerance: ±5% |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||||
 |
P600M-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 6A; 13 inch reel; Ifsm: 400A; P600 Mounting: THT Quantity in set/package: 800pcs. Kind of package: 13 inch reel Max. off-state voltage: 1kV Case: P600 Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 2.5µs Max. forward voltage: 1V Load current: 6A Max. forward impulse current: 0.4kA |
auf Bestellung 975 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
BAS386-TR | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; MicroMELF; SMD; 50V; 0.2A; 7 inch reel Mounting: SMD Capacitance: 8pF Case: MicroMELF Max. forward impulse current: 5A Load current: 0.2A Max. load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.3V Features of semiconductor devices: small signal Max. off-state voltage: 50V Quantity in set/package: 2500pcs. Kind of package: 7 inch reel Type of diode: Schottky switching |
auf Bestellung 9984 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
BAS385-TR | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; MicroMELF; SMD; 30V; 0.2A; 7 inch reel Mounting: SMD Capacitance: 10pF Case: MicroMELF Leakage current: 2.3µA Max. forward impulse current: 5A Load current: 0.2A Max. load current: 0.3A Semiconductor structure: single diode Max. forward voltage: 0.8V Features of semiconductor devices: small signal Max. off-state voltage: 30V Quantity in set/package: 2500pcs. Kind of package: 7 inch reel Type of diode: Schottky switching |
auf Bestellung 9708 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
BAS383-TR | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; MicroMELF; SMD; 60V; 30mA; 7 inch reel Mounting: SMD Capacitance: 1.6pF Case: MicroMELF Leakage current: 0.2µA Max. forward impulse current: 0.5A Load current: 30mA Max. load current: 0.15A Semiconductor structure: single diode Max. forward voltage: 1V Features of semiconductor devices: small signal Max. off-state voltage: 60V Quantity in set/package: 2500pcs. Kind of package: 7 inch reel Type of diode: Schottky switching |
auf Bestellung 1610 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
MSS2P3-M3/89A | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; DO219AD; SMD; 30V; 2A; 7 inch reel Type of diode: Schottky switching Case: DO219AD Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.47V Max. forward impulse current: 30A Kind of package: 7 inch reel |
auf Bestellung 4184 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| MSS2P2HM3_A/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 2A; automotive industry Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 20V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 30A Leakage current: 0.25mA Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MSS2P3HM3_A/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 2A; automotive industry Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 30A Leakage current: 0.25mA Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
VS-42CTQ030S-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2; tube Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 30V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.38V Kind of package: tube Quantity in set/package: 50pcs. Max. load current: 40A Max. forward impulse current: 360A |
auf Bestellung 2082 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| VS-42CTQ030STRR-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2 Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 30V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.48V Kind of package: 13 inch reel Quantity in set/package: 800pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| VS-42CTQ030SHM3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2; tube Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 30V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.48V Kind of package: tube Quantity in set/package: 50pcs. Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| VS-42CTQ030STRL-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2 Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 30V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.48V Kind of package: 13 inch reel Quantity in set/package: 800pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| VS-42CTQ030STRLHM3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2 Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 30V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.48V Kind of package: 13 inch reel Quantity in set/package: 800pcs. Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| VS-42CTQ030STRRHM3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2 Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 30V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.48V Kind of package: 13 inch reel Quantity in set/package: 800pcs. Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IRFDC20PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.32A; Idm: 2.6A; 1W; HVMDIP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.32A Pulsed drain current: 2.6A Power dissipation: 1W Case: HVMDIP Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
SI2308CDS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.6A Pulsed drain current: 6A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 144mΩ Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 10467 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
SI2307CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.2A Gate charge: 6.2nC On-state resistance: 138mΩ Power dissipation: 1.8W Gate-source voltage: ±20V Kind of package: reel; tape |
auf Bestellung 5123 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
SI2303CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -10A; 1.5W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Pulsed drain current: -10A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 93 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
SI2304DDS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 1.1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.3A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 2.1nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2519 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
SI2306BDS-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 20A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 4.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1731 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
SI2308BDS-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; Idm: 8A; 1.06W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.8A Pulsed drain current: 8A Power dissipation: 1.06W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 192mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
SI2307BDS-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.5A Pulsed drain current: -12A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 78mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
|
SI2304BDS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 10A; 1.08W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.6A Power dissipation: 1.08W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 10A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SI2306BDS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.5A; Idm: 20A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 20A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 4.5nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SI2303CDS-T1-BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Pulsed drain current: -10A Power dissipation: 2.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.33Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SI2303CDS-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Pulsed drain current: -10A Power dissipation: 2.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.33Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SI2304BDS-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 2.6A; Idm: 10A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.6A Power dissipation: 1.08W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 10A Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
MAL205857472E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 4.7mF; 40VDC; Ø30x30mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Operating temperature: -40...105°C Capacitance: 4.7mF Terminal pitch: 10mm Height: 30mm Diameter: 30mm Body dimensions: Ø30x30mm Tolerance: ±20% Operating voltage: 40V DC Service life: 5000h |
auf Bestellung 176 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
6N139 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5.3kV; Uce: 7V; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 5.3kV CTR@If: 2000%@1.6mA Collector-emitter voltage: 7V Case: DIP8 Turn-on time: 6µs Turn-off time: 1.5µs |
auf Bestellung 714 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| MCS0402MD1691BE000 | VISHAY |
Category: SMD resistors Description: Resistor: thin film Type of resistor: thin film |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||||
 |
SI4936CDY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A Mounting: SMD Polarisation: unipolar Drain-source voltage: 30V Kind of package: reel; tape Pulsed drain current: 20A Drain current: 4.6A Gate charge: 9nC Type of transistor: N-MOSFET x2 On-state resistance: 50mΩ Power dissipation: 1.5W Gate-source voltage: ±20V Case: SO8 Kind of channel: enhancement Technology: TrenchFET® |
auf Bestellung 2715 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
SI4925BDY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.7A; 2W; SO8 Mounting: SMD Polarisation: unipolar Drain-source voltage: -30V Kind of package: reel; tape Drain current: -5.7A Gate charge: 50nC Type of transistor: P-MOSFET x2 On-state resistance: 41mΩ Power dissipation: 2W Gate-source voltage: ±20V Case: SO8 Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
|
SI4909DY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.4A; Idm: -30A Mounting: SMD Polarisation: unipolar Drain-source voltage: -40V Kind of package: reel; tape Pulsed drain current: -30A Drain current: -6.4A Gate charge: 63nC Type of transistor: P-MOSFET On-state resistance: 27mΩ Power dissipation: 2.1W Gate-source voltage: ±20V Case: SO8 Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SI4946CDY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 6.1A; Idm: 25A Mounting: SMD Polarisation: unipolar Drain-source voltage: 60V Kind of package: reel; tape Pulsed drain current: 25A Drain current: 6.1A Gate charge: 10nC Type of transistor: N-MOSFET x2 On-state resistance: 51.6mΩ Power dissipation: 2.8W Gate-source voltage: ±20V Case: SO8 Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SI4931DY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8 Mounting: SMD Polarisation: unipolar Drain-source voltage: -12V Kind of package: reel; tape Pulsed drain current: -30A Drain current: -8.9A Gate charge: 52nC Type of transistor: P-MOSFET x2 On-state resistance: 28mΩ Power dissipation: 2W Gate-source voltage: ±8V Case: SO8 Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SI4932DY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A Mounting: SMD Polarisation: unipolar Drain-source voltage: 30V Kind of package: reel; tape Pulsed drain current: 30A Drain current: 8A Gate charge: 48nC Type of transistor: N-MOSFET x2 On-state resistance: 17mΩ Power dissipation: 3.2W Gate-source voltage: ±20V Case: SO8 Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SI4963BDY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8 Mounting: SMD Polarisation: unipolar Drain-source voltage: -20V Kind of package: reel; tape Pulsed drain current: -40A Drain current: -6.5A Gate charge: 21nC Type of transistor: P-MOSFET x2 On-state resistance: 50mΩ Power dissipation: 2W Gate-source voltage: ±12V Case: SO8 Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SI4900DY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A Mounting: SMD Polarisation: unipolar Drain-source voltage: 60V Kind of package: reel; tape Pulsed drain current: 20A Drain current: 5.3A Gate charge: 20nC Type of transistor: N-MOSFET x2 On-state resistance: 72mΩ Power dissipation: 3.1W Gate-source voltage: ±20V Case: SO8 Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SI4900DY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A Mounting: SMD Polarisation: unipolar Drain-source voltage: 60V Kind of package: reel; tape Pulsed drain current: 20A Drain current: 5.3A Gate charge: 20nC Type of transistor: N-MOSFET x2 On-state resistance: 72mΩ Power dissipation: 3.1W Gate-source voltage: ±20V Case: SO8 Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| Si4904DY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A Mounting: SMD Polarisation: unipolar Drain-source voltage: 40V Kind of package: reel; tape Pulsed drain current: 20A Drain current: 8A Gate charge: 85nC Type of transistor: N-MOSFET x2 On-state resistance: 19mΩ Power dissipation: 3.25W Gate-source voltage: ±16V Case: SO8 Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SI4904DY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A Mounting: SMD Polarisation: unipolar Drain-source voltage: 40V Kind of package: reel; tape Pulsed drain current: 20A Drain current: 8A Gate charge: 85nC Type of transistor: N-MOSFET x2 On-state resistance: 19mΩ Power dissipation: 3.25W Gate-source voltage: ±16V Case: SO8 Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| Si4922BDY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A Mounting: SMD Polarisation: unipolar Drain-source voltage: 30V Kind of package: reel; tape Pulsed drain current: 35A Drain current: 8A Gate charge: 62nC Type of transistor: N-MOSFET x2 On-state resistance: 24mΩ Power dissipation: 3.1W Gate-source voltage: ±12V Case: SO8 Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SI4922BDY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A Mounting: SMD Polarisation: unipolar Drain-source voltage: 30V Kind of package: reel; tape Pulsed drain current: 35A Drain current: 8A Gate charge: 62nC Type of transistor: N-MOSFET x2 On-state resistance: 24mΩ Power dissipation: 3.1W Gate-source voltage: ±12V Case: SO8 Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SI4931DY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8 Mounting: SMD Polarisation: unipolar Drain-source voltage: -12V Kind of package: reel; tape Pulsed drain current: -30A Drain current: -8.9A Gate charge: 52nC Type of transistor: P-MOSFET x2 On-state resistance: 28mΩ Power dissipation: 2W Gate-source voltage: ±8V Case: SO8 Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MCT06030F7159BPW00 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 330mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 330mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCT0603MD7159BP100 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 25ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 25ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCT0603MD7159BP500 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 25ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 25ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCT0603MD7159BPW00 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 330mm
Temperature coefficient: 25ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 330mm
Temperature coefficient: 25ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCT0603ME7159BP100 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 15ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 15ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCT0603ME7159BP500 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 15ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 15ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCT0603ME7159BPW00 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 330mm
Temperature coefficient: 15ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 330mm
Temperature coefficient: 15ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCT0603MF7159BP100 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCT0603MF7159BP500 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCT0603MF7159BPW00 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 330mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 330mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI8424CDB-T1-E1 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 10A; Idm: 25A; 1.8W
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: MICROFOOT® 1.6x1.6
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 20mΩ
Power dissipation: 1.8W
Gate-source voltage: ±5V
Drain-source voltage: 8V
Drain current: 10A
Pulsed drain current: 25A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 10A; Idm: 25A; 1.8W
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: MICROFOOT® 1.6x1.6
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 20mΩ
Power dissipation: 1.8W
Gate-source voltage: ±5V
Drain-source voltage: 8V
Drain current: 10A
Pulsed drain current: 25A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBPC3506W-E4/51 |
|
Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBPC3508-E4/51 |
|
Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBPC3506-E4/51 |
|
Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBPC3504W-E4/51 |
|
Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5242B-TR |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 500mW; 12V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 500mW; 12V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20000+ | 0.039 EUR |
| 1N5246B-TR |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 500mW; 16V; DO35
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Case: DO35
Mounting: THT
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 500mW; 16V; DO35
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Case: DO35
Mounting: THT
Tolerance: ±5%
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20000+ | 0.039 EUR |
| P600M-E3/54 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; 13 inch reel; Ifsm: 400A; P600
Mounting: THT
Quantity in set/package: 800pcs.
Kind of package: 13 inch reel
Max. off-state voltage: 1kV
Case: P600
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 2.5µs
Max. forward voltage: 1V
Load current: 6A
Max. forward impulse current: 0.4kA
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; 13 inch reel; Ifsm: 400A; P600
Mounting: THT
Quantity in set/package: 800pcs.
Kind of package: 13 inch reel
Max. off-state voltage: 1kV
Case: P600
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 2.5µs
Max. forward voltage: 1V
Load current: 6A
Max. forward impulse current: 0.4kA
auf Bestellung 975 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 95+ | 0.76 EUR |
| 102+ | 0.7 EUR |
| 108+ | 0.67 EUR |
| 126+ | 0.57 EUR |
| 137+ | 0.52 EUR |
| 250+ | 0.47 EUR |
| 500+ | 0.43 EUR |
| 800+ | 0.4 EUR |
| BAS386-TR |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 50V; 0.2A; 7 inch reel
Mounting: SMD
Capacitance: 8pF
Case: MicroMELF
Max. forward impulse current: 5A
Load current: 0.2A
Max. load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Features of semiconductor devices: small signal
Max. off-state voltage: 50V
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 50V; 0.2A; 7 inch reel
Mounting: SMD
Capacitance: 8pF
Case: MicroMELF
Max. forward impulse current: 5A
Load current: 0.2A
Max. load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Features of semiconductor devices: small signal
Max. off-state voltage: 50V
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
Type of diode: Schottky switching
auf Bestellung 9984 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 365+ | 0.2 EUR |
| 542+ | 0.13 EUR |
| 715+ | 0.1 EUR |
| 1000+ | 0.089 EUR |
| 2500+ | 0.077 EUR |
| 5000+ | 0.069 EUR |
| 7500+ | 0.065 EUR |
| BAS385-TR |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 30V; 0.2A; 7 inch reel
Mounting: SMD
Capacitance: 10pF
Case: MicroMELF
Leakage current: 2.3µA
Max. forward impulse current: 5A
Load current: 0.2A
Max. load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Features of semiconductor devices: small signal
Max. off-state voltage: 30V
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 30V; 0.2A; 7 inch reel
Mounting: SMD
Capacitance: 10pF
Case: MicroMELF
Leakage current: 2.3µA
Max. forward impulse current: 5A
Load current: 0.2A
Max. load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Features of semiconductor devices: small signal
Max. off-state voltage: 30V
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
Type of diode: Schottky switching
auf Bestellung 9708 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 341+ | 0.21 EUR |
| 548+ | 0.13 EUR |
| 655+ | 0.11 EUR |
| 906+ | 0.079 EUR |
| 1000+ | 0.072 EUR |
| 1300+ | 0.069 EUR |
| 2500+ | 0.065 EUR |
| 5000+ | 0.061 EUR |
| BAS383-TR |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 60V; 30mA; 7 inch reel
Mounting: SMD
Capacitance: 1.6pF
Case: MicroMELF
Leakage current: 0.2µA
Max. forward impulse current: 0.5A
Load current: 30mA
Max. load current: 0.15A
Semiconductor structure: single diode
Max. forward voltage: 1V
Features of semiconductor devices: small signal
Max. off-state voltage: 60V
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 60V; 30mA; 7 inch reel
Mounting: SMD
Capacitance: 1.6pF
Case: MicroMELF
Leakage current: 0.2µA
Max. forward impulse current: 0.5A
Load current: 30mA
Max. load current: 0.15A
Semiconductor structure: single diode
Max. forward voltage: 1V
Features of semiconductor devices: small signal
Max. off-state voltage: 60V
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
Type of diode: Schottky switching
auf Bestellung 1610 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1035+ | 0.069 EUR |
| 1150+ | 0.062 EUR |
| 1300+ | 0.055 EUR |
| MSS2P3-M3/89A |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; DO219AD; SMD; 30V; 2A; 7 inch reel
Type of diode: Schottky switching
Case: DO219AD
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Category: SMD Schottky diodes
Description: Diode: Schottky switching; DO219AD; SMD; 30V; 2A; 7 inch reel
Type of diode: Schottky switching
Case: DO219AD
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
auf Bestellung 4184 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 807+ | 0.089 EUR |
| 848+ | 0.084 EUR |
| 944+ | 0.076 EUR |
| MSS2P2HM3_A/H |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 30A
Leakage current: 0.25mA
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 30A
Leakage current: 0.25mA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSS2P3HM3_A/H |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 30A
Leakage current: 0.25mA
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 30A
Leakage current: 0.25mA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-42CTQ030S-M3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.38V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. load current: 40A
Max. forward impulse current: 360A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.38V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. load current: 40A
Max. forward impulse current: 360A
auf Bestellung 2082 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.63 EUR |
| 50+ | 1.46 EUR |
| 52+ | 1.4 EUR |
| VS-42CTQ030STRR-M3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-42CTQ030SHM3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: tube
Quantity in set/package: 50pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: tube
Quantity in set/package: 50pcs.
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-42CTQ030STRL-M3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-42CTQ030STRLHM3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-42CTQ030STRRHM3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.48V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFDC20PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.32A; Idm: 2.6A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.32A
Pulsed drain current: 2.6A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.32A; Idm: 2.6A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.32A
Pulsed drain current: 2.6A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI2308CDS-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.6A
Pulsed drain current: 6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.6A
Pulsed drain current: 6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 10467 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 202+ | 0.35 EUR |
| 350+ | 0.2 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| SI2307CDS-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Gate charge: 6.2nC
On-state resistance: 138mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Gate charge: 6.2nC
On-state resistance: 138mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: reel; tape
auf Bestellung 5123 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 212+ | 0.34 EUR |
| 278+ | 0.26 EUR |
| 309+ | 0.23 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.18 EUR |
| 3000+ | 0.16 EUR |
| SI2303CDS-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -10A; 1.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -10A; 1.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 93+ | 0.77 EUR |
| SI2304DDS-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.3A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.3A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2519 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 186+ | 0.38 EUR |
| 307+ | 0.23 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.15 EUR |
| 1500+ | 0.14 EUR |
| SI2306BDS-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1731 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 95+ | 0.76 EUR |
| 125+ | 0.58 EUR |
| 169+ | 0.42 EUR |
| 191+ | 0.37 EUR |
| 500+ | 0.36 EUR |
| SI2308BDS-T1-E3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; Idm: 8A; 1.06W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.06W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 192mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; Idm: 8A; 1.06W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.06W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 192mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.21 EUR |
| SI2307BDS-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -12A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -12A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI2304BDS-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 10A; 1.08W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 10A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 10A; 1.08W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI2306BDS-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.5A; Idm: 20A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.5A; Idm: 20A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI2303CDS-T1-BE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI2303CDS-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI2304BDS-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 2.6A; Idm: 10A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 10A
Technology: TrenchFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 2.6A; Idm: 10A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 10A
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MAL205857472E3 |
|
Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 4.7mF; 40VDC; Ø30x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Operating temperature: -40...105°C
Capacitance: 4.7mF
Terminal pitch: 10mm
Height: 30mm
Diameter: 30mm
Body dimensions: Ø30x30mm
Tolerance: ±20%
Operating voltage: 40V DC
Service life: 5000h
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 4.7mF; 40VDC; Ø30x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Operating temperature: -40...105°C
Capacitance: 4.7mF
Terminal pitch: 10mm
Height: 30mm
Diameter: 30mm
Body dimensions: Ø30x30mm
Tolerance: ±20%
Operating voltage: 40V DC
Service life: 5000h
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.64 EUR |
| 11+ | 6.64 EUR |
| 25+ | 6.42 EUR |
| 50+ | 6.23 EUR |
| 100+ | 6.18 EUR |
| 6N139 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5.3kV; Uce: 7V; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5.3kV
CTR@If: 2000%@1.6mA
Collector-emitter voltage: 7V
Case: DIP8
Turn-on time: 6µs
Turn-off time: 1.5µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5.3kV; Uce: 7V; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5.3kV
CTR@If: 2000%@1.6mA
Collector-emitter voltage: 7V
Case: DIP8
Turn-on time: 6µs
Turn-off time: 1.5µs
auf Bestellung 714 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 45+ | 1.62 EUR |
| 74+ | 0.97 EUR |
| 87+ | 0.83 EUR |
| 95+ | 0.76 EUR |
| MCS0402MD1691BE000 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film
Type of resistor: thin film
Category: SMD resistors
Description: Resistor: thin film
Type of resistor: thin film
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.047 EUR |
| SI4936CDY-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 4.6A
Gate charge: 9nC
Type of transistor: N-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 4.6A
Gate charge: 9nC
Type of transistor: N-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
auf Bestellung 2715 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
| 96+ | 0.75 EUR |
| 138+ | 0.52 EUR |
| 161+ | 0.45 EUR |
| 500+ | 0.4 EUR |
| SI4925BDY-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.7A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -30V
Kind of package: reel; tape
Drain current: -5.7A
Gate charge: 50nC
Type of transistor: P-MOSFET x2
On-state resistance: 41mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.7A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -30V
Kind of package: reel; tape
Drain current: -5.7A
Gate charge: 50nC
Type of transistor: P-MOSFET x2
On-state resistance: 41mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4909DY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.4A; Idm: -30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -40V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -6.4A
Gate charge: 63nC
Type of transistor: P-MOSFET
On-state resistance: 27mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.4A; Idm: -30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -40V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -6.4A
Gate charge: 63nC
Type of transistor: P-MOSFET
On-state resistance: 27mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4946CDY-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 6.1A; Idm: 25A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: reel; tape
Pulsed drain current: 25A
Drain current: 6.1A
Gate charge: 10nC
Type of transistor: N-MOSFET x2
On-state resistance: 51.6mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 6.1A; Idm: 25A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: reel; tape
Pulsed drain current: 25A
Drain current: 6.1A
Gate charge: 10nC
Type of transistor: N-MOSFET x2
On-state resistance: 51.6mΩ
Power dissipation: 2.8W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4931DY-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -12V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8.9A
Gate charge: 52nC
Type of transistor: P-MOSFET x2
On-state resistance: 28mΩ
Power dissipation: 2W
Gate-source voltage: ±8V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -12V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8.9A
Gate charge: 52nC
Type of transistor: P-MOSFET x2
On-state resistance: 28mΩ
Power dissipation: 2W
Gate-source voltage: ±8V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4932DY-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 30A
Drain current: 8A
Gate charge: 48nC
Type of transistor: N-MOSFET x2
On-state resistance: 17mΩ
Power dissipation: 3.2W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 30A
Drain current: 8A
Gate charge: 48nC
Type of transistor: N-MOSFET x2
On-state resistance: 17mΩ
Power dissipation: 3.2W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4963BDY-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -40A
Drain current: -6.5A
Gate charge: 21nC
Type of transistor: P-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Pulsed drain current: -40A
Drain current: -6.5A
Gate charge: 21nC
Type of transistor: P-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4900DY-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 5.3A
Gate charge: 20nC
Type of transistor: N-MOSFET x2
On-state resistance: 72mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 5.3A
Gate charge: 20nC
Type of transistor: N-MOSFET x2
On-state resistance: 72mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4900DY-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 5.3A
Gate charge: 20nC
Type of transistor: N-MOSFET x2
On-state resistance: 72mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 5.3A
Gate charge: 20nC
Type of transistor: N-MOSFET x2
On-state resistance: 72mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| Si4904DY-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 40V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 8A
Gate charge: 85nC
Type of transistor: N-MOSFET x2
On-state resistance: 19mΩ
Power dissipation: 3.25W
Gate-source voltage: ±16V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 40V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 8A
Gate charge: 85nC
Type of transistor: N-MOSFET x2
On-state resistance: 19mΩ
Power dissipation: 3.25W
Gate-source voltage: ±16V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4904DY-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 40V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 8A
Gate charge: 85nC
Type of transistor: N-MOSFET x2
On-state resistance: 19mΩ
Power dissipation: 3.25W
Gate-source voltage: ±16V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 40V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 8A
Gate charge: 85nC
Type of transistor: N-MOSFET x2
On-state resistance: 19mΩ
Power dissipation: 3.25W
Gate-source voltage: ±16V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| Si4922BDY-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 35A
Drain current: 8A
Gate charge: 62nC
Type of transistor: N-MOSFET x2
On-state resistance: 24mΩ
Power dissipation: 3.1W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 35A
Drain current: 8A
Gate charge: 62nC
Type of transistor: N-MOSFET x2
On-state resistance: 24mΩ
Power dissipation: 3.1W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4922BDY-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 35A
Drain current: 8A
Gate charge: 62nC
Type of transistor: N-MOSFET x2
On-state resistance: 24mΩ
Power dissipation: 3.1W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 35A
Drain current: 8A
Gate charge: 62nC
Type of transistor: N-MOSFET x2
On-state resistance: 24mΩ
Power dissipation: 3.1W
Gate-source voltage: ±12V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4931DY-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -12V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8.9A
Gate charge: 52nC
Type of transistor: P-MOSFET x2
On-state resistance: 28mΩ
Power dissipation: 2W
Gate-source voltage: ±8V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -12V
Kind of package: reel; tape
Pulsed drain current: -30A
Drain current: -8.9A
Gate charge: 52nC
Type of transistor: P-MOSFET x2
On-state resistance: 28mΩ
Power dissipation: 2W
Gate-source voltage: ±8V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH