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GB10MPS17-247 GB10MPS17-247 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F69B42A640C7&compId=GB10MPS17-247.pdf?ci_sign=3ef9c30ec8388b7c1ead11bc136bcddfbaa50834 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Mounting: THT
Max. off-state voltage: 1.7kV
Max. forward voltage: 1.5V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 87A
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO247-2
Produkt ist nicht verfügbar
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GD2X100MPS06N GD2X100MPS06N GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84B0D7831F3880D2&compId=GD2X100MPS06N.pdf?ci_sign=1b2ed4d223639b685bea14afaa75997f05600f5d Category: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 108A x2
Case: SOT227B
Max. forward voltage: 1.8V
Max. forward impulse current: 0.44kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Reverse recovery time: 10ns
Kind of package: tube
Max. load current: 231A
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
2+57.16 EUR
Mindestbestellmenge: 2
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GD2X30MPS06N GD2X30MPS06N GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F71CC1F860C7&compId=GD2X30MPS06N.pdf?ci_sign=efe1bfcbb3de999f478691de546827d7c91eaa55 Category: Diode modules
Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 30A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 0.168kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Reverse recovery time: 10ns
Kind of package: tube
Max. load current: 60A
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
3+25.43 EUR
Mindestbestellmenge: 3
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GD30MPS06J GD30MPS06J GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F77752E620C7&compId=GD30MPS06J.pdf?ci_sign=f8b1e4b27ce9688c062b7b8c34999d76d8340eac Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-7; SiC; SMD; 650V; 30A; tube
Case: TO263-7
Mounting: SMD
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.5V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.168kA
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.55 EUR
25+5.49 EUR
Mindestbestellmenge: 13
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G3R160MT12D G3R160MT12D GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F57F1B3060C7&compId=G3R160MT12D.pdf?ci_sign=086ae24aaa3e50a514892fe6bd224ecc7bfc54d3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 123W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 28nC
Technology: G3R™; SiC
auf Bestellung 845 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.39 EUR
11+6.68 EUR
30+6.42 EUR
Mindestbestellmenge: 10
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G3R160MT17D G3R160MT17D GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F57F1B3320C7&compId=G3R160MT17D.pdf?ci_sign=276ec0a4ae3fd6dab9f56d72e76e55585fff9413 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 15A; Idm: 48A; 175W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 15A
Pulsed drain current: 48A
Power dissipation: 175W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21nC
Technology: G3R™; SiC
auf Bestellung 392 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.96 EUR
7+10.85 EUR
Mindestbestellmenge: 6
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GD02MPS12E GD02MPS12E GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6DAEE6E40C7&compId=GD02MPS12E.pdf?ci_sign=35f99afe0f7cc4f7f81495afcfd21ad04d45fadd Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.5V
Max. forward impulse current: 16A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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GB01SLT12-252 GB01SLT12-252 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793F200C7&compId=GB01SLT12-252.pdf?ci_sign=3f8bd99f926ff4342ef6ac1189e760174984f563 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 1A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Max. forward impulse current: 8A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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GB02SLT12-252 GB02SLT12-252 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F604D1C2A0C7&compId=GB02SLT12-252.pdf?ci_sign=735707e6339eeaaa7c2480d77ead93404157f8fe Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Max. forward impulse current: 16A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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GC05MPS12-252 GC05MPS12-252 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6B778BAE0C7&compId=GC05MPS12-252.pdf?ci_sign=1244ebf80f49eec2e95eb1a36754093090b0ef8f Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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GC08MPS12-252 GC08MPS12-252 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6A750D480C7&compId=GC08MPS12-252.pdf?ci_sign=7bd27eb2a318d5ff13acac126c512bd7e6afa233 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 8A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.5V
Max. forward impulse current: 60A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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GC10MPS12-252 GC10MPS12-252 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6A750D740C7&compId=GC10MPS12-252.pdf?ci_sign=831fa413bb78ef0fd5d403c7ff076878496d51ca Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.5V
Max. forward impulse current: 80A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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GD10MPS12E GeneSiC SEMICONDUCTOR GD10MPS12E.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 18A
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.9V
Max. forward impulse current: 64A
Kind of package: reel; tape
Max. load current: 33A
Produkt ist nicht verfügbar
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GE04MPS06E GeneSiC SEMICONDUCTOR GE04MPS06E.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.75V
Max. forward impulse current: 22A
Kind of package: reel; tape
Max. load current: 11A
Produkt ist nicht verfügbar
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GE06MPS06E GE06MPS06E GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F77752E8A0C7&compId=GE06MPS06E.pdf?ci_sign=b9d56ecc1d522c59d92d3ddf7cdc04261d57ca19 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.25V
Max. forward impulse current: 27A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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GE08MPS06E GE08MPS06E GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F711291E40C7&compId=GE08MPS06E.pdf?ci_sign=957031edcd4d7dc3fb58511501e4b979b8d996c4 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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GE10MPS06E GE10MPS06E GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F7D2B0E1A0C7&compId=GE10MPS06E.pdf?ci_sign=c5b7c131c2664c7e3bcbb0c939f5acf31b45bf7d Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.25V
Max. forward impulse current: 44A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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GB10MPS17-247 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F69B42A640C7&compId=GB10MPS17-247.pdf?ci_sign=3ef9c30ec8388b7c1ead11bc136bcddfbaa50834
GB10MPS17-247
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Mounting: THT
Max. off-state voltage: 1.7kV
Max. forward voltage: 1.5V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 87A
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO247-2
Produkt ist nicht verfügbar
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GD2X100MPS06N pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84B0D7831F3880D2&compId=GD2X100MPS06N.pdf?ci_sign=1b2ed4d223639b685bea14afaa75997f05600f5d
GD2X100MPS06N
Hersteller: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 108A x2
Case: SOT227B
Max. forward voltage: 1.8V
Max. forward impulse current: 0.44kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Reverse recovery time: 10ns
Kind of package: tube
Max. load current: 231A
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+57.16 EUR
Mindestbestellmenge: 2
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GD2X30MPS06N pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F71CC1F860C7&compId=GD2X30MPS06N.pdf?ci_sign=efe1bfcbb3de999f478691de546827d7c91eaa55
GD2X30MPS06N
Hersteller: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 30A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 0.168kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Reverse recovery time: 10ns
Kind of package: tube
Max. load current: 60A
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+25.43 EUR
Mindestbestellmenge: 3
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GD30MPS06J pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F77752E620C7&compId=GD30MPS06J.pdf?ci_sign=f8b1e4b27ce9688c062b7b8c34999d76d8340eac
GD30MPS06J
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-7; SiC; SMD; 650V; 30A; tube
Case: TO263-7
Mounting: SMD
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Max. off-state voltage: 650V
Max. forward voltage: 1.5V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.168kA
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.55 EUR
25+5.49 EUR
Mindestbestellmenge: 13
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G3R160MT12D pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F57F1B3060C7&compId=G3R160MT12D.pdf?ci_sign=086ae24aaa3e50a514892fe6bd224ecc7bfc54d3
G3R160MT12D
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 123W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 28nC
Technology: G3R™; SiC
auf Bestellung 845 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.39 EUR
11+6.68 EUR
30+6.42 EUR
Mindestbestellmenge: 10
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G3R160MT17D pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F57F1B3320C7&compId=G3R160MT17D.pdf?ci_sign=276ec0a4ae3fd6dab9f56d72e76e55585fff9413
G3R160MT17D
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 15A; Idm: 48A; 175W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 15A
Pulsed drain current: 48A
Power dissipation: 175W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21nC
Technology: G3R™; SiC
auf Bestellung 392 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.96 EUR
7+10.85 EUR
Mindestbestellmenge: 6
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GD02MPS12E pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6DAEE6E40C7&compId=GD02MPS12E.pdf?ci_sign=35f99afe0f7cc4f7f81495afcfd21ad04d45fadd
GD02MPS12E
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.5V
Max. forward impulse current: 16A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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GB01SLT12-252 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793F200C7&compId=GB01SLT12-252.pdf?ci_sign=3f8bd99f926ff4342ef6ac1189e760174984f563
GB01SLT12-252
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 1A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Max. forward impulse current: 8A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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GB02SLT12-252 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F604D1C2A0C7&compId=GB02SLT12-252.pdf?ci_sign=735707e6339eeaaa7c2480d77ead93404157f8fe
GB02SLT12-252
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Max. forward impulse current: 16A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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GC05MPS12-252 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6B778BAE0C7&compId=GC05MPS12-252.pdf?ci_sign=1244ebf80f49eec2e95eb1a36754093090b0ef8f
GC05MPS12-252
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
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GC08MPS12-252 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6A750D480C7&compId=GC08MPS12-252.pdf?ci_sign=7bd27eb2a318d5ff13acac126c512bd7e6afa233
GC08MPS12-252
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 8A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.5V
Max. forward impulse current: 60A
Kind of package: reel; tape
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GC10MPS12-252 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6A750D740C7&compId=GC10MPS12-252.pdf?ci_sign=831fa413bb78ef0fd5d403c7ff076878496d51ca
GC10MPS12-252
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.5V
Max. forward impulse current: 80A
Kind of package: reel; tape
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GD10MPS12E GD10MPS12E.pdf
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 18A
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.9V
Max. forward impulse current: 64A
Kind of package: reel; tape
Max. load current: 33A
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GE04MPS06E GE04MPS06E.pdf
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.75V
Max. forward impulse current: 22A
Kind of package: reel; tape
Max. load current: 11A
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GE06MPS06E pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F77752E8A0C7&compId=GE06MPS06E.pdf?ci_sign=b9d56ecc1d522c59d92d3ddf7cdc04261d57ca19
GE06MPS06E
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.25V
Max. forward impulse current: 27A
Kind of package: reel; tape
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GE08MPS06E pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F711291E40C7&compId=GE08MPS06E.pdf?ci_sign=957031edcd4d7dc3fb58511501e4b979b8d996c4
GE08MPS06E
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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GE10MPS06E pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F7D2B0E1A0C7&compId=GE10MPS06E.pdf?ci_sign=c5b7c131c2664c7e3bcbb0c939f5acf31b45bf7d
GE10MPS06E
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.25V
Max. forward impulse current: 44A
Kind of package: reel; tape
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