Produkte > GENESIC SEMICONDUCTOR > Alle Produkte des Herstellers GENESIC SEMICONDUCTOR (5689) > Seite 95 nach 95
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||
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|   | MBR2X060A120 | GeneSiC Semiconductor |  Schottky Rectifier Module Type 120 A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MBR2X060A150 | GeneSiC Semiconductor |  Schottky Rectifier Vrrm 150 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| MBR2X060A080 | GeneSiC Semiconductor |  Schottky Rectifier Module Type 120 A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| MBRH20060R | GeneSiC Semiconductor |  Rectifier Diode Schottky 60V 200A 2-Pin Case D-67 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||
|   | FR70BR02 | GeneSiC Semiconductor |  Rectifier Diode Switching 100V 70A 200ns 2-Pin DO-5 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| S70YR | GeneSiC Semiconductor |  Diode Switching 1.6KV 70A 2-Pin DO-5 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| S70D | GeneSiC Semiconductor |  Rectifier Diode Switching 200V 70A 2-Pin DO-5 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| S70M | GeneSiC Semiconductor |  Rectifier Diode Switching 1KV 70A 2-Pin DO-5 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| FR70J05 | GeneSiC Semiconductor |  Diode Switching 600V 70A 2-Pin DO-5 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| S70JR | GeneSiC Semiconductor |  Rectifier Diode Switching 600V 70A 2-Pin DO-5 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| S70DR | GeneSiC Semiconductor |  Rectifier Diode Switching 200V 70A 2-Pin DO-5 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| S70V | GeneSiC Semiconductor |  Rectifier Diode Switching 1.4KV 70A 2-Pin DO-5 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| S70BR | GeneSiC Semiconductor |  Rectifier Diode Switching 100V 70A 2-Pin DO-5 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| S70B | GeneSiC Semiconductor |  Rectifier Diode Switching 100V 70A 2-Pin DO-5 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| MBR6040R | GeneSiC Semiconductor |  Rectifier Diode Schottky 40V 60A 2-Pin DO-5 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||
|   | G3R20MT12K | GeneSiC SEMICONDUCTOR |  Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W Kind of package: tube Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 219nC On-state resistance: 20mΩ Drain current: 90A Pulsed drain current: 240A Power dissipation: 542W Drain-source voltage: 1.2kV Kind of channel: enhancement Technology: G3R™; SiC Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Mounting: THT Case: TO247-4 | auf Bestellung 569 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | G3R30MT12K | GeneSiC SEMICONDUCTOR |  Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W Kind of package: tube Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 155nC On-state resistance: 30mΩ Drain current: 63A Pulsed drain current: 200A Power dissipation: 400W Drain-source voltage: 1.2kV Kind of channel: enhancement Technology: G3R™; SiC Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Mounting: THT Case: TO247-4 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|   | G3R40MT12K | GeneSiC SEMICONDUCTOR |  Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W Kind of package: tube Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 106nC On-state resistance: 40mΩ Drain current: 50A Pulsed drain current: 140A Power dissipation: 333W Drain-source voltage: 1.2kV Kind of channel: enhancement Technology: G3R™; SiC Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Mounting: THT Case: TO247-4 | auf Bestellung 279 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | G3R75MT12K | GeneSiC SEMICONDUCTOR |  Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W Kind of package: tube Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 54nC On-state resistance: 75mΩ Drain current: 29A Pulsed drain current: 80A Power dissipation: 207W Drain-source voltage: 1.2kV Kind of channel: enhancement Technology: G3R™; SiC Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Mounting: THT Case: TO247-4 | auf Bestellung 461 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | G2R1000MT17J | GeneSiC SEMICONDUCTOR |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7 Mounting: SMD Power dissipation: 54W Drain-source voltage: 1.7kV Kind of channel: enhancement Technology: G2R™; SiC Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Case: TO263-7 Kind of package: tube Polarisation: unipolar Gate-source voltage: -5...20V On-state resistance: 1Ω Drain current: 4A Pulsed drain current: 8A | auf Bestellung 188 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | G3R20MT12N | GeneSiC SEMICONDUCTOR |  Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 74A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 20mΩ Pulsed drain current: 240A Power dissipation: 365W Technology: G3R™; SiC Gate-source voltage: -5...15V Mechanical mounting: screw Kind of channel: enhancement | auf Bestellung 110 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | G3R20MT17N | GeneSiC SEMICONDUCTOR |  Category: Transistor modules MOSFET Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.7kV Drain current: 70A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 20mΩ Pulsed drain current: 300A Power dissipation: 523W Technology: G3R™; SiC Gate-source voltage: -5...15V Mechanical mounting: screw Kind of channel: enhancement | auf Bestellung 2 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | G3R75MT12D | GeneSiC SEMICONDUCTOR |  Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W Drain-source voltage: 1.2kV Drain current: 29A Case: TO247-3 On-state resistance: 75mΩ Pulsed drain current: 80A Power dissipation: 207W Technology: G3R™; SiC Gate-source voltage: -5...15V Kind of package: tube Mounting: THT Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Gate charge: 54nC | auf Bestellung 91 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | GC02MPS12-220 | GeneSiC SEMICONDUCTOR |  Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.5V Max. forward impulse current: 16A Kind of package: tube Features of semiconductor devices: MPS | auf Bestellung 8 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | G3R350MT12D | GeneSiC SEMICONDUCTOR |  Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W Drain-source voltage: 1.2kV Drain current: 8A Case: TO247-3 On-state resistance: 0.35Ω Pulsed drain current: 16A Power dissipation: 74W Technology: G3R™; SiC Gate-source voltage: -5...15V Kind of package: tube Mounting: THT Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Gate charge: 12nC | auf Bestellung 374 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | GD20MPS12H | GeneSiC SEMICONDUCTOR |  Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 27A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.9V Max. forward impulse current: 128A Kind of package: tube Max. load current: 67A Features of semiconductor devices: MPS | auf Bestellung 531 Stücke:Lieferzeit 14-21 Tag (e) | 
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| GD10MPS12H | GeneSiC SEMICONDUCTOR |  Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO247-2; tube Max. off-state voltage: 1.2kV Max. load current: 33A Load current: 16A Case: TO247-2 Mounting: THT Kind of package: tube Max. forward impulse current: 64A Features of semiconductor devices: MPS Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Max. forward voltage: 1.9V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||
|   | GD2X100MPS06N | GeneSiC SEMICONDUCTOR |  Category: Diode modules Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Features of semiconductor devices: MPS Kind of package: tube Case: SOT227B Mechanical mounting: screw Electrical mounting: screw Technology: SiC Reverse recovery time: 10ns Max. forward voltage: 1.8V Load current: 108A x2 Max. load current: 231A Max. forward impulse current: 0.44kA Max. off-state voltage: 650V | auf Bestellung 83 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | GD2X30MPS06N | GeneSiC SEMICONDUCTOR |  Category: Diode modules Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Features of semiconductor devices: MPS Kind of package: tube Case: SOT227B Mechanical mounting: screw Electrical mounting: screw Technology: SiC Reverse recovery time: 10ns Max. forward voltage: 1.5V Load current: 30A x2 Max. load current: 60A Max. forward impulse current: 0.168kA Max. off-state voltage: 650V | auf Bestellung 9 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | GD20MPS12A | GeneSiC SEMICONDUCTOR |  Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 29A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.9V Max. forward impulse current: 128A Kind of package: tube Max. load current: 67A Features of semiconductor devices: MPS | auf Bestellung 1107 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | G3R450MT17D | GeneSiC SEMICONDUCTOR |  Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W Kind of package: tube Kind of channel: enhancement Technology: G3R™; SiC Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 18nC On-state resistance: 0.45Ω Drain current: 6A Pulsed drain current: 16A Power dissipation: 88W Drain-source voltage: 1.7kV Case: TO247-3 | auf Bestellung 407 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | G3R450MT17J | GeneSiC SEMICONDUCTOR |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 91W Kind of package: tube Kind of channel: enhancement Technology: G3R™; SiC Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 18nC On-state resistance: 0.45Ω Drain current: 6A Pulsed drain current: 16A Power dissipation: 91W Drain-source voltage: 1.7kV Case: TO263-7 | auf Bestellung 841 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | G3R40MT12D | GeneSiC SEMICONDUCTOR |  Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W Drain-source voltage: 1.2kV Drain current: 50A Case: TO247-3 On-state resistance: 40mΩ Pulsed drain current: 140A Power dissipation: 333W Technology: G3R™; SiC Gate-source voltage: -5...15V Kind of package: tube Mounting: THT Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Gate charge: 106nC | auf Bestellung 671 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | G3R160MT12D | GeneSiC SEMICONDUCTOR |  Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W Drain-source voltage: 1.2kV Drain current: 16A Case: TO247-3 On-state resistance: 0.16Ω Pulsed drain current: 40A Power dissipation: 123W Technology: G3R™; SiC Gate-source voltage: -5...15V Kind of package: tube Mounting: THT Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Gate charge: 28nC | auf Bestellung 845 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | GD30MPS06H | GeneSiC SEMICONDUCTOR |  Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 30A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.5V Max. forward impulse current: 0.168kA Kind of package: tube Features of semiconductor devices: MPS | auf Bestellung 91 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | GD10MPS17H | GeneSiC SEMICONDUCTOR |  Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.7kV Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2.1V Max. forward impulse current: 80A Kind of package: tube Max. load current: 42A Features of semiconductor devices: MPS | auf Bestellung 255 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | GD15MPS17H | GeneSiC SEMICONDUCTOR |  Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 15A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.7kV Load current: 15A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2.1V Max. forward impulse current: 120A Kind of package: tube Max. load current: 63A Features of semiconductor devices: MPS | auf Bestellung 458 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | GD05MPS17H | GeneSiC SEMICONDUCTOR |  Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 5A; TO247-2; tube Semiconductor structure: single diode Max. off-state voltage: 1.7kV Load current: 5A Case: TO247-2 Max. forward voltage: 2.1V Max. forward impulse current: 40A Max. load current: 21A Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Type of diode: Schottky rectifying Mounting: THT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| GD05MPS17J | GeneSiC SEMICONDUCTOR |  Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-7; SiC; SMD; 1.7kV; 5A; tube Semiconductor structure: single diode Max. off-state voltage: 1.7kV Load current: 5A Case: TO263-7 Max. forward voltage: 2.1V Max. forward impulse current: 40A Max. load current: 21A Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Type of diode: Schottky rectifying Mounting: SMD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||
|   | GB10MPS17-247 | GeneSiC SEMICONDUCTOR |  Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube Semiconductor structure: single diode Max. off-state voltage: 1.7kV Load current: 10A Case: TO247-2 Max. forward voltage: 1.5V Max. forward impulse current: 87A Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Type of diode: Schottky rectifying Mounting: THT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|   | GB2X50MPS17-227 | GeneSiC SEMICONDUCTOR |  Category: Diode modules Description: Module: diode; double independent; 1.7kV; If: 50Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 1.7kV Load current: 50A x2 Case: SOT227B Max. forward voltage: 1.5V Max. forward impulse current: 0.432kA Electrical mounting: screw Max. load current: 100A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|   | GD2X75MPS17N | GeneSiC SEMICONDUCTOR |  Category: Diode modules Description: Module: diode; double independent; 1.7kV; If: 75Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 1.7kV Load current: 75A x2 Case: SOT227B Max. forward voltage: 1.5V Max. forward impulse current: 0.6kA Electrical mounting: screw Max. load current: 150A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|   | G3R45MT17K | GeneSiC SEMICONDUCTOR |  Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 43A Power dissipation: 438W Case: TO247-4 Gate-source voltage: -5...15V On-state resistance: 45mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 160A Gate charge: 182nC Features of semiconductor devices: Kelvin terminal | auf Bestellung 300 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | G3R30MT12J | GeneSiC SEMICONDUCTOR |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W Mounting: SMD On-state resistance: 30mΩ Type of transistor: N-MOSFET Polarisation: unipolar Technology: G3R™; SiC Kind of channel: enhancement Drain current: 68A Pulsed drain current: 200A Power dissipation: 459W Drain-source voltage: 1.2kV Features of semiconductor devices: Kelvin terminal Gate-source voltage: -5...15V Gate charge: 155nC Kind of package: tube Case: TO263-7 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|   | G3R160MT12J | GeneSiC SEMICONDUCTOR |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 128W Mounting: SMD On-state resistance: 0.16Ω Type of transistor: N-MOSFET Polarisation: unipolar Technology: G3R™; SiC Kind of channel: enhancement Drain current: 16A Pulsed drain current: 40A Power dissipation: 128W Drain-source voltage: 1.2kV Features of semiconductor devices: Kelvin terminal Gate-source voltage: -5...15V Gate charge: 28nC Kind of package: tube Case: TO263-7 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|   | G3R40MT12J | GeneSiC SEMICONDUCTOR |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W Mounting: SMD On-state resistance: 40mΩ Type of transistor: N-MOSFET Polarisation: unipolar Technology: G3R™; SiC Kind of channel: enhancement Drain current: 53A Pulsed drain current: 140A Power dissipation: 374W Drain-source voltage: 1.2kV Features of semiconductor devices: Kelvin terminal Gate-source voltage: -5...15V Gate charge: 106nC Kind of package: tube Case: TO263-7 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|   | G3R75MT12J | GeneSiC SEMICONDUCTOR |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W Mounting: SMD On-state resistance: 75mΩ Type of transistor: N-MOSFET Polarisation: unipolar Technology: G3R™; SiC Kind of channel: enhancement Drain current: 30A Pulsed drain current: 80A Power dissipation: 224W Drain-source voltage: 1.2kV Features of semiconductor devices: Kelvin terminal Gate-source voltage: -5...15V Gate charge: 54nC Kind of package: tube Case: TO263-7 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|   | GC2X15MPS12-247 | GeneSiC SEMICONDUCTOR |  Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube Mounting: THT Semiconductor structure: common cathode; double Features of semiconductor devices: MPS Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Kind of package: tube Max. forward voltage: 1.5V Load current: 15A x2 Max. load current: 30A Max. forward impulse current: 120A Max. off-state voltage: 1.2kV | auf Bestellung 21 Stücke:Lieferzeit 14-21 Tag (e) | 
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| MBR2X060A120 |  | 
Hersteller: GeneSiC Semiconductor
Schottky Rectifier Module Type 120 A
    Schottky Rectifier Module Type 120 A
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MBR2X060A150 |  | 
Hersteller: GeneSiC Semiconductor
Schottky Rectifier Vrrm 150 V
    Schottky Rectifier Vrrm 150 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MBR2X060A080 |  | 
Hersteller: GeneSiC Semiconductor
Schottky Rectifier Module Type 120 A
    Schottky Rectifier Module Type 120 A
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MBRH20060R |  | 
Hersteller: GeneSiC Semiconductor
Rectifier Diode Schottky 60V 200A 2-Pin Case D-67
    Rectifier Diode Schottky 60V 200A 2-Pin Case D-67
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| FR70BR02 |  | 
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 100V 70A 200ns 2-Pin DO-5
    Rectifier Diode Switching 100V 70A 200ns 2-Pin DO-5
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| S70YR |  | 
Hersteller: GeneSiC Semiconductor
Diode Switching 1.6KV 70A 2-Pin DO-5
    Diode Switching 1.6KV 70A 2-Pin DO-5
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| S70D |  | 
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 200V 70A 2-Pin DO-5
    Rectifier Diode Switching 200V 70A 2-Pin DO-5
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| S70M |  | 
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 1KV 70A 2-Pin DO-5
    Rectifier Diode Switching 1KV 70A 2-Pin DO-5
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| FR70J05 |  | 
Hersteller: GeneSiC Semiconductor
Diode Switching 600V 70A 2-Pin DO-5
    Diode Switching 600V 70A 2-Pin DO-5
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| S70JR |  | 
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 600V 70A 2-Pin DO-5
    Rectifier Diode Switching 600V 70A 2-Pin DO-5
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| S70DR |  | 
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 200V 70A 2-Pin DO-5
    Rectifier Diode Switching 200V 70A 2-Pin DO-5
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| S70V |  | 
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 1.4KV 70A 2-Pin DO-5
    Rectifier Diode Switching 1.4KV 70A 2-Pin DO-5
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| S70BR |  | 
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 100V 70A 2-Pin DO-5
    Rectifier Diode Switching 100V 70A 2-Pin DO-5
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| S70B |  | 
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 100V 70A 2-Pin DO-5
    Rectifier Diode Switching 100V 70A 2-Pin DO-5
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| MBR6040R |  | 
Hersteller: GeneSiC Semiconductor
Rectifier Diode Schottky 40V 60A 2-Pin DO-5
    Rectifier Diode Schottky 40V 60A 2-Pin DO-5
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| G3R20MT12K |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 219nC
On-state resistance: 20mΩ
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 542W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
    Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 219nC
On-state resistance: 20mΩ
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 542W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
auf Bestellung 569 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 2+ | 38.94 EUR | 
| 3+ | 37.42 EUR | 
| 10+ | 37.24 EUR | 
| G3R30MT12K |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 155nC
On-state resistance: 30mΩ
Drain current: 63A
Pulsed drain current: 200A
Power dissipation: 400W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
    Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 155nC
On-state resistance: 30mΩ
Drain current: 63A
Pulsed drain current: 200A
Power dissipation: 400W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| G3R40MT12K |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 106nC
On-state resistance: 40mΩ
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 333W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
    Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 106nC
On-state resistance: 40mΩ
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 333W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 4+ | 18.73 EUR | 
| G3R75MT12K |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 54nC
On-state resistance: 75mΩ
Drain current: 29A
Pulsed drain current: 80A
Power dissipation: 207W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
    Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 54nC
On-state resistance: 75mΩ
Drain current: 29A
Pulsed drain current: 80A
Power dissipation: 207W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
auf Bestellung 461 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 8+ | 10.11 EUR | 
| G2R1000MT17J |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7
Mounting: SMD
Power dissipation: 54W
Drain-source voltage: 1.7kV
Kind of channel: enhancement
Technology: G2R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Case: TO263-7
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
On-state resistance: 1Ω
Drain current: 4A
Pulsed drain current: 8A
    Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7
Mounting: SMD
Power dissipation: 54W
Drain-source voltage: 1.7kV
Kind of channel: enhancement
Technology: G2R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Case: TO263-7
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
On-state resistance: 1Ω
Drain current: 4A
Pulsed drain current: 8A
auf Bestellung 188 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 11+ | 6.84 EUR | 
| 12+ | 6.11 EUR | 
| G3R20MT12N |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 74A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 240A
Power dissipation: 365W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
    Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 74A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 240A
Power dissipation: 365W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 2+ | 60.86 EUR | 
| G3R20MT17N |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 70A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 300A
Power dissipation: 523W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
    Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 70A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 300A
Power dissipation: 523W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 1+ | 139.67 EUR | 
| G3R75MT12D |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Drain-source voltage: 1.2kV
Drain current: 29A
Case: TO247-3
On-state resistance: 75mΩ
Pulsed drain current: 80A
Power dissipation: 207W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 54nC
    Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Drain-source voltage: 1.2kV
Drain current: 29A
Case: TO247-3
On-state resistance: 75mΩ
Pulsed drain current: 80A
Power dissipation: 207W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 54nC
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 7+ | 11.6 EUR | 
| 10+ | 11.15 EUR | 
| GC02MPS12-220 |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 16A
Kind of package: tube
Features of semiconductor devices: MPS
    Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 16A
Kind of package: tube
Features of semiconductor devices: MPS
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 8+ | 8.94 EUR | 
| G3R350MT12D |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W
Drain-source voltage: 1.2kV
Drain current: 8A
Case: TO247-3
On-state resistance: 0.35Ω
Pulsed drain current: 16A
Power dissipation: 74W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 12nC
    Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W
Drain-source voltage: 1.2kV
Drain current: 8A
Case: TO247-3
On-state resistance: 0.35Ω
Pulsed drain current: 16A
Power dissipation: 74W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 12nC
auf Bestellung 374 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 16+ | 4.65 EUR | 
| GD20MPS12H |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 27A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.9V
Max. forward impulse current: 128A
Kind of package: tube
Max. load current: 67A
Features of semiconductor devices: MPS
    Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 27A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.9V
Max. forward impulse current: 128A
Kind of package: tube
Max. load current: 67A
Features of semiconductor devices: MPS
auf Bestellung 531 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 9+ | 8.18 EUR | 
| 10+ | 7.55 EUR | 
| 11+ | 7.14 EUR | 
| 30+ | 7.05 EUR | 
| 120+ | 6.86 EUR | 
| GD10MPS12H |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO247-2; tube
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 16A
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 64A
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.9V
    Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO247-2; tube
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 16A
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 64A
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| GD2X100MPS06N |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Features of semiconductor devices: MPS
Kind of package: tube
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Technology: SiC
Reverse recovery time: 10ns
Max. forward voltage: 1.8V
Load current: 108A x2
Max. load current: 231A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 650V
    Category: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Features of semiconductor devices: MPS
Kind of package: tube
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Technology: SiC
Reverse recovery time: 10ns
Max. forward voltage: 1.8V
Load current: 108A x2
Max. load current: 231A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 650V
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 2+ | 56.94 EUR | 
| GD2X30MPS06N |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Features of semiconductor devices: MPS
Kind of package: tube
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Technology: SiC
Reverse recovery time: 10ns
Max. forward voltage: 1.5V
Load current: 30A x2
Max. load current: 60A
Max. forward impulse current: 0.168kA
Max. off-state voltage: 650V
    Category: Diode modules
Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Features of semiconductor devices: MPS
Kind of package: tube
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Technology: SiC
Reverse recovery time: 10ns
Max. forward voltage: 1.5V
Load current: 30A x2
Max. load current: 60A
Max. forward impulse current: 0.168kA
Max. off-state voltage: 650V
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 3+ | 25.38 EUR | 
| GD20MPS12A |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 29A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.9V
Max. forward impulse current: 128A
Kind of package: tube
Max. load current: 67A
Features of semiconductor devices: MPS
    Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 29A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.9V
Max. forward impulse current: 128A
Kind of package: tube
Max. load current: 67A
Features of semiconductor devices: MPS
auf Bestellung 1107 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 11+ | 6.95 EUR | 
| 14+ | 5.18 EUR | 
| G3R450MT17D |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W
Kind of package: tube
Kind of channel: enhancement
Technology: G3R™; SiC
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 18nC
On-state resistance: 0.45Ω
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 88W
Drain-source voltage: 1.7kV
Case: TO247-3
    Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W
Kind of package: tube
Kind of channel: enhancement
Technology: G3R™; SiC
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 18nC
On-state resistance: 0.45Ω
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 88W
Drain-source voltage: 1.7kV
Case: TO247-3
auf Bestellung 407 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 9+ | 8.18 EUR | 
| 12+ | 6.08 EUR | 
| G3R450MT17J |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 91W
Kind of package: tube
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 18nC
On-state resistance: 0.45Ω
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 91W
Drain-source voltage: 1.7kV
Case: TO263-7
    Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 91W
Kind of package: tube
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 18nC
On-state resistance: 0.45Ω
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 91W
Drain-source voltage: 1.7kV
Case: TO263-7
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 10+ | 7.72 EUR | 
| G3R40MT12D |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Drain-source voltage: 1.2kV
Drain current: 50A
Case: TO247-3
On-state resistance: 40mΩ
Pulsed drain current: 140A
Power dissipation: 333W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 106nC
    Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Drain-source voltage: 1.2kV
Drain current: 50A
Case: TO247-3
On-state resistance: 40mΩ
Pulsed drain current: 140A
Power dissipation: 333W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 106nC
auf Bestellung 671 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 4+ | 18.55 EUR | 
| 5+ | 17.53 EUR | 
| 30+ | 16.86 EUR | 
| G3R160MT12D |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W
Drain-source voltage: 1.2kV
Drain current: 16A
Case: TO247-3
On-state resistance: 0.16Ω
Pulsed drain current: 40A
Power dissipation: 123W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 28nC
    Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W
Drain-source voltage: 1.2kV
Drain current: 16A
Case: TO247-3
On-state resistance: 0.16Ω
Pulsed drain current: 40A
Power dissipation: 123W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 28nC
auf Bestellung 845 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 10+ | 7.39 EUR | 
| 11+ | 6.66 EUR | 
| 30+ | 6.42 EUR | 
| GD30MPS06H |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 0.168kA
Kind of package: tube
Features of semiconductor devices: MPS
    Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 0.168kA
Kind of package: tube
Features of semiconductor devices: MPS
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 9+ | 8.01 EUR | 
| 11+ | 6.76 EUR | 
| 12+ | 6.39 EUR | 
| GD10MPS17H |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 42A
Features of semiconductor devices: MPS
    Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 42A
Features of semiconductor devices: MPS
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 8+ | 9.37 EUR | 
| 9+ | 8.24 EUR | 
| 10+ | 7.79 EUR | 
| 120+ | 7.52 EUR | 
| GD15MPS17H |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 120A
Kind of package: tube
Max. load current: 63A
Features of semiconductor devices: MPS
    Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 120A
Kind of package: tube
Max. load current: 63A
Features of semiconductor devices: MPS
auf Bestellung 458 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 7+ | 11.68 EUR | 
| GD05MPS17H |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 5A; TO247-2; tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Load current: 5A
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 40A
Max. load current: 21A
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Type of diode: Schottky rectifying
Mounting: THT
    Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 5A; TO247-2; tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Load current: 5A
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 40A
Max. load current: 21A
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Type of diode: Schottky rectifying
Mounting: THT
Produkt ist nicht verfügbar
    Im Einkaufswagen
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| GD05MPS17J |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-7; SiC; SMD; 1.7kV; 5A; tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Load current: 5A
Case: TO263-7
Max. forward voltage: 2.1V
Max. forward impulse current: 40A
Max. load current: 21A
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Type of diode: Schottky rectifying
Mounting: SMD
    Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-7; SiC; SMD; 1.7kV; 5A; tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Load current: 5A
Case: TO263-7
Max. forward voltage: 2.1V
Max. forward impulse current: 40A
Max. load current: 21A
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Type of diode: Schottky rectifying
Mounting: SMD
Produkt ist nicht verfügbar
    Im Einkaufswagen
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| GB10MPS17-247 |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Load current: 10A
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 87A
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Type of diode: Schottky rectifying
Mounting: THT
    Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Load current: 10A
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 87A
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Type of diode: Schottky rectifying
Mounting: THT
Produkt ist nicht verfügbar
    Im Einkaufswagen
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| GB2X50MPS17-227 |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; If: 50Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.7kV
Load current: 50A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 0.432kA
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
    Category: Diode modules
Description: Module: diode; double independent; 1.7kV; If: 50Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.7kV
Load current: 50A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 0.432kA
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| GD2X75MPS17N |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; If: 75Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.7kV
Load current: 75A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
    Category: Diode modules
Description: Module: diode; double independent; 1.7kV; If: 75Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.7kV
Load current: 75A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
Produkt ist nicht verfügbar
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     Stück im Wert von     UAH
| G3R45MT17K |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 43A
Power dissipation: 438W
Case: TO247-4
Gate-source voltage: -5...15V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 160A
Gate charge: 182nC
Features of semiconductor devices: Kelvin terminal
    Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 43A
Power dissipation: 438W
Case: TO247-4
Gate-source voltage: -5...15V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 160A
Gate charge: 182nC
Features of semiconductor devices: Kelvin terminal
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 2+ | 37.48 EUR | 
| 30+ | 36.04 EUR | 
| G3R30MT12J |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W
Mounting: SMD
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 68A
Pulsed drain current: 200A
Power dissipation: 459W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 155nC
Kind of package: tube
Case: TO263-7
    Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W
Mounting: SMD
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 68A
Pulsed drain current: 200A
Power dissipation: 459W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 155nC
Kind of package: tube
Case: TO263-7
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| G3R160MT12J |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 128W
Mounting: SMD
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 128W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 28nC
Kind of package: tube
Case: TO263-7
    Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 128W
Mounting: SMD
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 128W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 28nC
Kind of package: tube
Case: TO263-7
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| G3R40MT12J |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W
Mounting: SMD
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 53A
Pulsed drain current: 140A
Power dissipation: 374W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 106nC
Kind of package: tube
Case: TO263-7
    Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W
Mounting: SMD
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 53A
Pulsed drain current: 140A
Power dissipation: 374W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 106nC
Kind of package: tube
Case: TO263-7
Produkt ist nicht verfügbar
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| G3R75MT12J |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W
Mounting: SMD
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 30A
Pulsed drain current: 80A
Power dissipation: 224W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 54nC
Kind of package: tube
Case: TO263-7
    Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W
Mounting: SMD
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 30A
Pulsed drain current: 80A
Power dissipation: 224W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 54nC
Kind of package: tube
Case: TO263-7
Produkt ist nicht verfügbar
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| GC2X15MPS12-247 |  | 
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Mounting: THT
Semiconductor structure: common cathode; double
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 120A
Max. off-state voltage: 1.2kV
    Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Mounting: THT
Semiconductor structure: common cathode; double
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 120A
Max. off-state voltage: 1.2kV
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis | 
|---|---|
| 7+ | 10.75 EUR |