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FR70J05 GeneSiC Semiconductor fr70b05.pdf Diode Switching 600V 70A 2-Pin DO-5
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S70JR GeneSiC Semiconductor s70g.pdf Rectifier Diode Switching 600V 70A 2-Pin DO-5
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S70DR GeneSiC Semiconductor s70g.pdf Rectifier Diode Switching 200V 70A 2-Pin DO-5
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S70V GeneSiC Semiconductor s70vr.pdf Rectifier Diode Switching 1.4KV 70A 2-Pin DO-5
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S70BR GeneSiC Semiconductor s70g.pdf Rectifier Diode Switching 100V 70A 2-Pin DO-5
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S70B GeneSiC Semiconductor s70g.pdf Rectifier Diode Switching 100V 70A 2-Pin DO-5
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MBR6040R GeneSiC Semiconductor 36162614700956272mbr6020_thru_mbr6040r.pdf Rectifier Diode Schottky 40V 60A 2-Pin DO-5
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G3R20MT12K G3R20MT12K GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571AC80C7&compId=G3R20MT12K.pdf?ci_sign=24c5cc08cfe874c5b61f676ade8dcc0043159f11 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 219nC
On-state resistance: 20mΩ
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 542W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
auf Bestellung 569 Stücke:
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2+39.17 EUR
3+37.65 EUR
10+37.25 EUR
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G3R30MT12K G3R30MT12K GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571B2C0C7&compId=G3R30MT12K.pdf?ci_sign=417d67b664418281382a923165baa7b388c1663a Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 155nC
On-state resistance: 30mΩ
Drain current: 63A
Pulsed drain current: 200A
Power dissipation: 400W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
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G3R40MT12K G3R40MT12K GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793E540C7&compId=G3R40MT12K.pdf?ci_sign=d330f694272859cc9115703241ced6feb09b3bf0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 106nC
On-state resistance: 40mΩ
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 333W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
auf Bestellung 279 Stücke:
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4+18.76 EUR
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G3R75MT12K G3R75MT12K GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6421FEF60C7&compId=G3R75MT12K.pdf?ci_sign=4ade885997dd7890cf368c2735032911b1ba9f38 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 54nC
On-state resistance: 75mΩ
Drain current: 29A
Pulsed drain current: 80A
Power dissipation: 207W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
auf Bestellung 453 Stücke:
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8+10.11 EUR
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G2R1000MT17J G2R1000MT17J GeneSiC SEMICONDUCTOR G2R1000MT17J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7
Mounting: SMD
Technology: G2R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
On-state resistance: 1Ω
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 54W
Drain-source voltage: 1.7kV
Kind of package: tube
Case: TO263-7
Kind of channel: enhancement
auf Bestellung 187 Stücke:
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11+6.79 EUR
12+6.12 EUR
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G3R20MT12N G3R20MT12N GeneSiC SEMICONDUCTOR G3R20MT12N.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 74A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 240A
Power dissipation: 365W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
auf Bestellung 110 Stücke:
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2+61.09 EUR
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G3R20MT17N G3R20MT17N GeneSiC SEMICONDUCTOR G3R20MT17N.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 70A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 300A
Power dissipation: 523W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
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G3R75MT12D G3R75MT12D GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793EB80C7&compId=G3R75MT12D.pdf?ci_sign=15ac56251724ba4e0af9a71a5fc5a4fda96229ad Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 29A
Pulsed drain current: 80A
Power dissipation: 207W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 91 Stücke:
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7+11.21 EUR
10+11.15 EUR
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GC02MPS12-220 GC02MPS12-220 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6B778B9A0C7&compId=GC02MPS12-220.pdf?ci_sign=5b7cd32c33a073a9b17522300153aa93377d3d17 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube
Semiconductor structure: single diode
Kind of package: tube
Features of semiconductor devices: MPS
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220-2
Max. forward voltage: 1.5V
Load current: 2A
Max. forward impulse current: 16A
Max. off-state voltage: 1.2kV
auf Bestellung 8 Stücke:
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8+8.94 EUR
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GD20MPS12H GD20MPS12H GeneSiC SEMICONDUCTOR GD20MPS12H.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube
Max. off-state voltage: 1.2kV
Max. load current: 67A
Load current: 27A
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 128A
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.9V
auf Bestellung 531 Stücke:
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10+7.41 EUR
11+6.99 EUR
30+6.86 EUR
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GD10MPS12H GeneSiC SEMICONDUCTOR GD10MPS12H.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO247-2; tube
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 16A
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 64A
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.9V
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GD2X100MPS06N GD2X100MPS06N GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84B0D7831F3880D2&compId=GD2X100MPS06N.pdf?ci_sign=1b2ed4d223639b685bea14afaa75997f05600f5d Category: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 108A x2
Case: SOT227B
Max. forward voltage: 1.8V
Max. forward impulse current: 0.44kA
Electrical mounting: screw
Max. load current: 231A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Reverse recovery time: 10ns
Kind of package: tube
auf Bestellung 83 Stücke:
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2+57.44 EUR
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GD2X30MPS06N GD2X30MPS06N GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F71CC1F860C7&compId=GD2X30MPS06N.pdf?ci_sign=efe1bfcbb3de999f478691de546827d7c91eaa55 Category: Diode modules
Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 30A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 0.168kA
Electrical mounting: screw
Max. load current: 60A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Reverse recovery time: 10ns
Kind of package: tube
auf Bestellung 7 Stücke:
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3+25.6 EUR
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GD20MPS12A GD20MPS12A GeneSiC SEMICONDUCTOR GD20MPS12A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube
Semiconductor structure: single diode
Kind of package: tube
Features of semiconductor devices: MPS
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220-2
Max. forward voltage: 1.9V
Load current: 29A
Max. load current: 67A
Max. forward impulse current: 128A
Max. off-state voltage: 1.2kV
auf Bestellung 1107 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.26 EUR
13+5.86 EUR
25+5.61 EUR
50+5.39 EUR
100+5.21 EUR
250+4.99 EUR
Mindestbestellmenge: 12
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G3R450MT17J G3R450MT17J GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793E7C0C7&compId=G3R450MT17J.pdf?ci_sign=fb6f69167c3c5663eef111d5bcd6739f8e8e0312 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 91W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
auf Bestellung 841 Stücke:
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10+7.76 EUR
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GC2X15MPS12-247 GC2X15MPS12-247 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6A750DF00C7&compId=GC2X15MPS12-247.pdf?ci_sign=178143544f1be58c59460efff2b373df8bffe5f5 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Kind of package: tube
Features of semiconductor devices: MPS
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. forward voltage: 1.5V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 120A
Max. off-state voltage: 1.2kV
auf Bestellung 21 Stücke:
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7+10.8 EUR
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GE2X8MPS06D GE2X8MPS06D GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F7D2B0E420C7&compId=GE2X8MPS06D.pdf?ci_sign=d66b91dcf83eef08485d0063aca1ea9d1b133d03 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Kind of package: tube
Features of semiconductor devices: MPS
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. forward voltage: 1.25V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 36A
Max. off-state voltage: 650V
auf Bestellung 60 Stücke:
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16+4.53 EUR
17+4.45 EUR
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GC2X10MPS12-247 GC2X10MPS12-247 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6A750DDC0C7&compId=GC2X10MPS12-247.pdf?ci_sign=e075ca835a1a5ec526ae3d81441dbc12a96a6763 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Kind of package: tube
Features of semiconductor devices: MPS
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. forward voltage: 1.5V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 80A
Max. off-state voltage: 1.2kV
auf Bestellung 13 Stücke:
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9+8.78 EUR
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GC2X8MPS12-247 GC2X8MPS12-247 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6DAEE6A80C7&compId=GC2X8MPS12-247.pdf?ci_sign=8c5e325e271b4f22def450d924e930f6cf152081 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Kind of package: tube
Features of semiconductor devices: MPS
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. forward voltage: 1.5V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 60A
Max. off-state voltage: 1.2kV
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.5 EUR
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GC2X5MPS12-247 GC2X5MPS12-247 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6DAEE6940C7&compId=GC2X5MPS12-247.pdf?ci_sign=22b717436d147819ca0797c4a474a406b23594d6 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Kind of package: tube
Features of semiconductor devices: MPS
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. forward voltage: 1.5V
Load current: 5A x2
Max. load current: 10A
Max. forward impulse current: 40A
Max. off-state voltage: 1.2kV
auf Bestellung 28 Stücke:
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14+5.35 EUR
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GC15MPS12-247 GC15MPS12-247 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F708B5DC80C7&compId=GC15MPS12-247.pdf?ci_sign=4ac77057ece4747c92a492a58a4553c9ddd81843 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Semiconductor structure: single diode
Kind of package: tube
Features of semiconductor devices: MPS
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-2
Max. forward voltage: 1.5V
Load current: 15A
Max. forward impulse current: 120A
Max. off-state voltage: 1.2kV
auf Bestellung 49 Stücke:
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7+10.98 EUR
Mindestbestellmenge: 7
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GC10MPS12-220 GC10MPS12-220 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6A750D600C7&compId=GC10MPS12-220.pdf?ci_sign=18926f42c79388a3e357c27a5e3b51058e96b5c5 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube
Max. forward voltage: 1.5V
Load current: 10A
Max. forward impulse current: 80A
Max. off-state voltage: 1.2kV
Mounting: THT
Features of semiconductor devices: MPS
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO220-2
Produkt ist nicht verfügbar
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GC10MPS12-252 GC10MPS12-252 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6A750D740C7&compId=GC10MPS12-252.pdf?ci_sign=831fa413bb78ef0fd5d403c7ff076878496d51ca Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A
Max. forward voltage: 1.5V
Load current: 10A
Max. forward impulse current: 80A
Max. off-state voltage: 1.2kV
Mounting: SMD
Features of semiconductor devices: MPS
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO252-2
Produkt ist nicht verfügbar
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GB20SLT12-247 GB20SLT12-247 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F69B42A780C7&compId=GB20SLT12-247.pdf?ci_sign=a8d0f6f4a31b6ee5d68c260fe2afdbdbe72e5c5b Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 160A
Kind of package: tube
Produkt ist nicht verfügbar
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GB50SLT12-247 GB50SLT12-247 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6B778B860C7&compId=GB50SLT12-247.pdf?ci_sign=a4aa72e47928a4f11fd91a5094cfb7da466cef2f Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 0.4kA
Kind of package: tube
Produkt ist nicht verfügbar
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GD30MPS06J GD30MPS06J GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F77752E620C7&compId=GD30MPS06J.pdf?ci_sign=f8b1e4b27ce9688c062b7b8c34999d76d8340eac Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-7; SiC; SMD; 650V; 30A; tube
Case: TO263-7
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 30A
Max. forward impulse current: 0.168kA
Max. off-state voltage: 650V
Technology: SiC
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Semiconductor structure: single diode
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.61 EUR
25+5.51 EUR
Mindestbestellmenge: 13
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FR70J05 fr70b05.pdf
Hersteller: GeneSiC Semiconductor
Diode Switching 600V 70A 2-Pin DO-5
Produkt ist nicht verfügbar
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S70JR s70g.pdf
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 600V 70A 2-Pin DO-5
Produkt ist nicht verfügbar
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S70DR s70g.pdf
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 200V 70A 2-Pin DO-5
Produkt ist nicht verfügbar
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S70V s70vr.pdf
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 1.4KV 70A 2-Pin DO-5
Produkt ist nicht verfügbar
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S70BR s70g.pdf
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 100V 70A 2-Pin DO-5
Produkt ist nicht verfügbar
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S70B s70g.pdf
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 100V 70A 2-Pin DO-5
Produkt ist nicht verfügbar
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MBR6040R 36162614700956272mbr6020_thru_mbr6040r.pdf
Hersteller: GeneSiC Semiconductor
Rectifier Diode Schottky 40V 60A 2-Pin DO-5
Produkt ist nicht verfügbar
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G3R20MT12K pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571AC80C7&compId=G3R20MT12K.pdf?ci_sign=24c5cc08cfe874c5b61f676ade8dcc0043159f11
G3R20MT12K
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 219nC
On-state resistance: 20mΩ
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 542W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
auf Bestellung 569 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+39.17 EUR
3+37.65 EUR
10+37.25 EUR
Mindestbestellmenge: 2
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G3R30MT12K pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571B2C0C7&compId=G3R30MT12K.pdf?ci_sign=417d67b664418281382a923165baa7b388c1663a
G3R30MT12K
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 155nC
On-state resistance: 30mΩ
Drain current: 63A
Pulsed drain current: 200A
Power dissipation: 400W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
Produkt ist nicht verfügbar
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G3R40MT12K pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793E540C7&compId=G3R40MT12K.pdf?ci_sign=d330f694272859cc9115703241ced6feb09b3bf0
G3R40MT12K
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 106nC
On-state resistance: 40mΩ
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 333W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.76 EUR
Mindestbestellmenge: 4
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G3R75MT12K pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6421FEF60C7&compId=G3R75MT12K.pdf?ci_sign=4ade885997dd7890cf368c2735032911b1ba9f38
G3R75MT12K
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 54nC
On-state resistance: 75mΩ
Drain current: 29A
Pulsed drain current: 80A
Power dissipation: 207W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
auf Bestellung 453 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.11 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
G2R1000MT17J G2R1000MT17J.pdf
G2R1000MT17J
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7
Mounting: SMD
Technology: G2R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
On-state resistance: 1Ω
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 54W
Drain-source voltage: 1.7kV
Kind of package: tube
Case: TO263-7
Kind of channel: enhancement
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.79 EUR
12+6.12 EUR
Mindestbestellmenge: 11
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G3R20MT12N G3R20MT12N.pdf
G3R20MT12N
Hersteller: GeneSiC SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 74A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 240A
Power dissipation: 365W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+61.09 EUR
Mindestbestellmenge: 2
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G3R20MT17N G3R20MT17N.pdf
G3R20MT17N
Hersteller: GeneSiC SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 70A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 300A
Power dissipation: 523W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G3R75MT12D pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793EB80C7&compId=G3R75MT12D.pdf?ci_sign=15ac56251724ba4e0af9a71a5fc5a4fda96229ad
G3R75MT12D
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 29A
Pulsed drain current: 80A
Power dissipation: 207W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.21 EUR
10+11.15 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GC02MPS12-220 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6B778B9A0C7&compId=GC02MPS12-220.pdf?ci_sign=5b7cd32c33a073a9b17522300153aa93377d3d17
GC02MPS12-220
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube
Semiconductor structure: single diode
Kind of package: tube
Features of semiconductor devices: MPS
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220-2
Max. forward voltage: 1.5V
Load current: 2A
Max. forward impulse current: 16A
Max. off-state voltage: 1.2kV
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
GD20MPS12H GD20MPS12H.pdf
GD20MPS12H
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube
Max. off-state voltage: 1.2kV
Max. load current: 67A
Load current: 27A
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 128A
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.9V
auf Bestellung 531 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.41 EUR
11+6.99 EUR
30+6.86 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
GD10MPS12H GD10MPS12H.pdf
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO247-2; tube
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 16A
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 64A
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD2X100MPS06N pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84B0D7831F3880D2&compId=GD2X100MPS06N.pdf?ci_sign=1b2ed4d223639b685bea14afaa75997f05600f5d
GD2X100MPS06N
Hersteller: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 108A x2
Case: SOT227B
Max. forward voltage: 1.8V
Max. forward impulse current: 0.44kA
Electrical mounting: screw
Max. load current: 231A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Reverse recovery time: 10ns
Kind of package: tube
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+57.44 EUR
Mindestbestellmenge: 2
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GD2X30MPS06N pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F71CC1F860C7&compId=GD2X30MPS06N.pdf?ci_sign=efe1bfcbb3de999f478691de546827d7c91eaa55
GD2X30MPS06N
Hersteller: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 30A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 0.168kA
Electrical mounting: screw
Max. load current: 60A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Reverse recovery time: 10ns
Kind of package: tube
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+25.6 EUR
Mindestbestellmenge: 3
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GD20MPS12A GD20MPS12A.pdf
GD20MPS12A
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube
Semiconductor structure: single diode
Kind of package: tube
Features of semiconductor devices: MPS
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220-2
Max. forward voltage: 1.9V
Load current: 29A
Max. load current: 67A
Max. forward impulse current: 128A
Max. off-state voltage: 1.2kV
auf Bestellung 1107 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.26 EUR
13+5.86 EUR
25+5.61 EUR
50+5.39 EUR
100+5.21 EUR
250+4.99 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
G3R450MT17J pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793E7C0C7&compId=G3R450MT17J.pdf?ci_sign=fb6f69167c3c5663eef111d5bcd6739f8e8e0312
G3R450MT17J
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 91W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.76 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
GC2X15MPS12-247 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6A750DF00C7&compId=GC2X15MPS12-247.pdf?ci_sign=178143544f1be58c59460efff2b373df8bffe5f5
GC2X15MPS12-247
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Kind of package: tube
Features of semiconductor devices: MPS
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. forward voltage: 1.5V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 120A
Max. off-state voltage: 1.2kV
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.8 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GE2X8MPS06D pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F7D2B0E420C7&compId=GE2X8MPS06D.pdf?ci_sign=d66b91dcf83eef08485d0063aca1ea9d1b133d03
GE2X8MPS06D
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Kind of package: tube
Features of semiconductor devices: MPS
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. forward voltage: 1.25V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 36A
Max. off-state voltage: 650V
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.53 EUR
17+4.45 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
GC2X10MPS12-247 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6A750DDC0C7&compId=GC2X10MPS12-247.pdf?ci_sign=e075ca835a1a5ec526ae3d81441dbc12a96a6763
GC2X10MPS12-247
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Kind of package: tube
Features of semiconductor devices: MPS
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. forward voltage: 1.5V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 80A
Max. off-state voltage: 1.2kV
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.78 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
GC2X8MPS12-247 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6DAEE6A80C7&compId=GC2X8MPS12-247.pdf?ci_sign=8c5e325e271b4f22def450d924e930f6cf152081
GC2X8MPS12-247
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Kind of package: tube
Features of semiconductor devices: MPS
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. forward voltage: 1.5V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 60A
Max. off-state voltage: 1.2kV
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.5 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GC2X5MPS12-247 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6DAEE6940C7&compId=GC2X5MPS12-247.pdf?ci_sign=22b717436d147819ca0797c4a474a406b23594d6
GC2X5MPS12-247
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube
Semiconductor structure: common cathode; double
Kind of package: tube
Features of semiconductor devices: MPS
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Max. forward voltage: 1.5V
Load current: 5A x2
Max. load current: 10A
Max. forward impulse current: 40A
Max. off-state voltage: 1.2kV
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.35 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
GC15MPS12-247 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F708B5DC80C7&compId=GC15MPS12-247.pdf?ci_sign=4ac77057ece4747c92a492a58a4553c9ddd81843
GC15MPS12-247
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Semiconductor structure: single diode
Kind of package: tube
Features of semiconductor devices: MPS
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-2
Max. forward voltage: 1.5V
Load current: 15A
Max. forward impulse current: 120A
Max. off-state voltage: 1.2kV
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.98 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GC10MPS12-220 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6A750D600C7&compId=GC10MPS12-220.pdf?ci_sign=18926f42c79388a3e357c27a5e3b51058e96b5c5
GC10MPS12-220
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube
Max. forward voltage: 1.5V
Load current: 10A
Max. forward impulse current: 80A
Max. off-state voltage: 1.2kV
Mounting: THT
Features of semiconductor devices: MPS
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO220-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC10MPS12-252 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6A750D740C7&compId=GC10MPS12-252.pdf?ci_sign=831fa413bb78ef0fd5d403c7ff076878496d51ca
GC10MPS12-252
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A
Max. forward voltage: 1.5V
Load current: 10A
Max. forward impulse current: 80A
Max. off-state voltage: 1.2kV
Mounting: SMD
Features of semiconductor devices: MPS
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO252-2
Produkt ist nicht verfügbar
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GB20SLT12-247 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F69B42A780C7&compId=GB20SLT12-247.pdf?ci_sign=a8d0f6f4a31b6ee5d68c260fe2afdbdbe72e5c5b
GB20SLT12-247
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 160A
Kind of package: tube
Produkt ist nicht verfügbar
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GB50SLT12-247 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6B778B860C7&compId=GB50SLT12-247.pdf?ci_sign=a4aa72e47928a4f11fd91a5094cfb7da466cef2f
GB50SLT12-247
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 0.4kA
Kind of package: tube
Produkt ist nicht verfügbar
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GD30MPS06J pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F77752E620C7&compId=GD30MPS06J.pdf?ci_sign=f8b1e4b27ce9688c062b7b8c34999d76d8340eac
GD30MPS06J
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-7; SiC; SMD; 650V; 30A; tube
Case: TO263-7
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 30A
Max. forward impulse current: 0.168kA
Max. off-state voltage: 650V
Technology: SiC
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Semiconductor structure: single diode
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.61 EUR
25+5.51 EUR
Mindestbestellmenge: 13
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