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MBR2X060A120 MBR2X060A120 GeneSiC Semiconductor mbr2x060a120.pdf Schottky Rectifier Module Type 120 A
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MBR2X060A150 GeneSiC Semiconductor mbr2x060a150.pdf Schottky Rectifier Vrrm 150 V
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MBR2X060A080 GeneSiC Semiconductor mbr2x060a080.pdf Schottky Rectifier Module Type 120 A
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MBRH20060R GeneSiC Semiconductor mbrh20060.pdf Rectifier Diode Schottky 60V 200A 2-Pin Case D-67
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FR70BR02 FR70BR02 GeneSiC Semiconductor fr70b02.pdf Rectifier Diode Switching 100V 70A 200ns 2-Pin DO-5
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S70YR GeneSiC Semiconductor s70vr.pdf Diode Switching 1.6KV 70A 2-Pin DO-5
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S70D GeneSiC Semiconductor s70g.pdf Rectifier Diode Switching 200V 70A 2-Pin DO-5
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S70M GeneSiC Semiconductor s70k.pdf Rectifier Diode Switching 1KV 70A 2-Pin DO-5
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FR70J05 GeneSiC Semiconductor fr70b05.pdf Diode Switching 600V 70A 2-Pin DO-5
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S70JR GeneSiC Semiconductor s70g.pdf Rectifier Diode Switching 600V 70A 2-Pin DO-5
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S70DR GeneSiC Semiconductor s70g.pdf Rectifier Diode Switching 200V 70A 2-Pin DO-5
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S70V GeneSiC Semiconductor s70vr.pdf Rectifier Diode Switching 1.4KV 70A 2-Pin DO-5
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S70BR GeneSiC Semiconductor s70g.pdf Rectifier Diode Switching 100V 70A 2-Pin DO-5
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S70B GeneSiC Semiconductor s70g.pdf Rectifier Diode Switching 100V 70A 2-Pin DO-5
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MBR6040R GeneSiC Semiconductor 36162614700956272mbr6020_thru_mbr6040r.pdf Rectifier Diode Schottky 40V 60A 2-Pin DO-5
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G3R20MT12K G3R20MT12K GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571AC80C7&compId=G3R20MT12K.pdf?ci_sign=24c5cc08cfe874c5b61f676ade8dcc0043159f11 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 219nC
On-state resistance: 20mΩ
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 542W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
auf Bestellung 569 Stücke:
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2+38.94 EUR
3+37.42 EUR
10+37.24 EUR
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G3R30MT12K G3R30MT12K GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571B2C0C7&compId=G3R30MT12K.pdf?ci_sign=417d67b664418281382a923165baa7b388c1663a Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 155nC
On-state resistance: 30mΩ
Drain current: 63A
Pulsed drain current: 200A
Power dissipation: 400W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
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G3R40MT12K G3R40MT12K GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793E540C7&compId=G3R40MT12K.pdf?ci_sign=d330f694272859cc9115703241ced6feb09b3bf0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 106nC
On-state resistance: 40mΩ
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 333W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
auf Bestellung 279 Stücke:
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4+18.73 EUR
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G3R75MT12K G3R75MT12K GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6421FEF60C7&compId=G3R75MT12K.pdf?ci_sign=4ade885997dd7890cf368c2735032911b1ba9f38 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 54nC
On-state resistance: 75mΩ
Drain current: 29A
Pulsed drain current: 80A
Power dissipation: 207W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
auf Bestellung 461 Stücke:
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8+10.11 EUR
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G2R1000MT17J G2R1000MT17J GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5006EA960C7&compId=G2R1000MT17J.pdf?ci_sign=9f1568725f74f7b947922ae5bebc5e8f409c5571 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7
Mounting: SMD
Power dissipation: 54W
Drain-source voltage: 1.7kV
Kind of channel: enhancement
Technology: G2R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Case: TO263-7
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
On-state resistance: 1Ω
Drain current: 4A
Pulsed drain current: 8A
auf Bestellung 188 Stücke:
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11+6.84 EUR
12+6.11 EUR
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G3R20MT12N G3R20MT12N GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571ADC0C7&compId=G3R20MT12N.pdf?ci_sign=867d61cd446a78630c72e74f61a8649267248476 Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 74A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 240A
Power dissipation: 365W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
auf Bestellung 110 Stücke:
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2+60.93 EUR
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G3R20MT17N G3R20MT17N GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571B040C7&compId=G3R20MT17N.pdf?ci_sign=afc1eeace1efd0fdabc1ddaf96306901c2848764 Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 70A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 300A
Power dissipation: 523W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
auf Bestellung 2 Stücke:
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1+138.62 EUR
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G3R75MT12D G3R75MT12D GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793EB80C7&compId=G3R75MT12D.pdf?ci_sign=15ac56251724ba4e0af9a71a5fc5a4fda96229ad Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Drain-source voltage: 1.2kV
Drain current: 29A
Case: TO247-3
On-state resistance: 75mΩ
Pulsed drain current: 80A
Power dissipation: 207W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 54nC
auf Bestellung 91 Stücke:
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7+11.6 EUR
10+11.15 EUR
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GC02MPS12-220 GC02MPS12-220 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6B778B9A0C7&compId=GC02MPS12-220.pdf?ci_sign=5b7cd32c33a073a9b17522300153aa93377d3d17 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 16A
Kind of package: tube
Features of semiconductor devices: MPS
auf Bestellung 8 Stücke:
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8+8.94 EUR
Mindestbestellmenge: 8
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G3R350MT12D G3R350MT12D GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571B400C7&compId=G3R350MT12D.pdf?ci_sign=b08bdf2e36df35986c19da23f6988a87e11ba7b7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W
Drain-source voltage: 1.2kV
Drain current: 8A
Case: TO247-3
On-state resistance: 0.35Ω
Pulsed drain current: 16A
Power dissipation: 74W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 12nC
auf Bestellung 374 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.65 EUR
Mindestbestellmenge: 16
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GD20MPS12H GD20MPS12H GeneSiC SEMICONDUCTOR GD20MPS12H.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 27A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.9V
Max. forward impulse current: 128A
Kind of package: tube
Max. load current: 67A
Features of semiconductor devices: MPS
auf Bestellung 531 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.18 EUR
10+7.55 EUR
11+7.14 EUR
30+7.05 EUR
120+6.86 EUR
Mindestbestellmenge: 9
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GD10MPS12H GeneSiC SEMICONDUCTOR GD10MPS12H.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO247-2; tube
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 16A
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 64A
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Produkt ist nicht verfügbar
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GD2X100MPS06N GD2X100MPS06N GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84B0D7831F3880D2&compId=GD2X100MPS06N.pdf?ci_sign=1b2ed4d223639b685bea14afaa75997f05600f5d Category: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Features of semiconductor devices: MPS
Kind of package: tube
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Technology: SiC
Reverse recovery time: 10ns
Max. forward voltage: 1.8V
Load current: 108A x2
Max. load current: 231A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 650V
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
2+56.94 EUR
Mindestbestellmenge: 2
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GD2X30MPS06N GD2X30MPS06N GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F71CC1F860C7&compId=GD2X30MPS06N.pdf?ci_sign=efe1bfcbb3de999f478691de546827d7c91eaa55 Category: Diode modules
Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Features of semiconductor devices: MPS
Kind of package: tube
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Technology: SiC
Reverse recovery time: 10ns
Max. forward voltage: 1.5V
Load current: 30A x2
Max. load current: 60A
Max. forward impulse current: 0.168kA
Max. off-state voltage: 650V
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
3+25.38 EUR
Mindestbestellmenge: 3
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GD20MPS12A GD20MPS12A GeneSiC SEMICONDUCTOR GD20MPS12A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 29A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.9V
Max. forward impulse current: 128A
Kind of package: tube
Max. load current: 67A
Features of semiconductor devices: MPS
auf Bestellung 1107 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.95 EUR
14+5.18 EUR
Mindestbestellmenge: 11
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G3R450MT17D G3R450MT17D GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793E680C7&compId=G3R450MT17D.pdf?ci_sign=623c2d7bc68ab7ce63fe93b60466746ffbe3ca5f Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W
Kind of package: tube
Kind of channel: enhancement
Technology: G3R™; SiC
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 18nC
On-state resistance: 0.45Ω
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 88W
Drain-source voltage: 1.7kV
Case: TO247-3
auf Bestellung 407 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.18 EUR
12+6.08 EUR
Mindestbestellmenge: 9
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G3R450MT17J G3R450MT17J GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793E7C0C7&compId=G3R450MT17J.pdf?ci_sign=fb6f69167c3c5663eef111d5bcd6739f8e8e0312 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 91W
Kind of package: tube
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 18nC
On-state resistance: 0.45Ω
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 91W
Drain-source voltage: 1.7kV
Case: TO263-7
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.72 EUR
Mindestbestellmenge: 10
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G3R40MT12D G3R40MT12D GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F604D1B0A0C7&compId=G3R40MT12D.pdf?ci_sign=80928ea7e4b37e0193cc95578c620c2ccb46972c Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Drain-source voltage: 1.2kV
Drain current: 50A
Case: TO247-3
On-state resistance: 40mΩ
Pulsed drain current: 140A
Power dissipation: 333W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 106nC
auf Bestellung 671 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.55 EUR
5+17.53 EUR
30+16.86 EUR
Mindestbestellmenge: 4
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G3R160MT12D G3R160MT12D GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F57F1B3060C7&compId=G3R160MT12D.pdf?ci_sign=086ae24aaa3e50a514892fe6bd224ecc7bfc54d3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W
Drain-source voltage: 1.2kV
Drain current: 16A
Case: TO247-3
On-state resistance: 0.16Ω
Pulsed drain current: 40A
Power dissipation: 123W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 28nC
auf Bestellung 845 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.39 EUR
11+6.66 EUR
30+6.42 EUR
Mindestbestellmenge: 10
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GD30MPS06H GD30MPS06H GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F77752E4E0C7&compId=GD30MPS06H.pdf?ci_sign=bc0db00698f6eb923b7417426a9d9ec5d86880bb Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 0.168kA
Kind of package: tube
Features of semiconductor devices: MPS
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.01 EUR
11+6.76 EUR
12+6.39 EUR
Mindestbestellmenge: 9
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GD10MPS17H GD10MPS17H GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F71CC1F720C7&compId=GD10MPS17H.pdf?ci_sign=b05d9cf7c1fa201ac9405cf96058e406639b928a Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 42A
Features of semiconductor devices: MPS
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.37 EUR
9+8.24 EUR
10+7.79 EUR
120+7.52 EUR
Mindestbestellmenge: 8
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GD15MPS17H GD15MPS17H GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84B12914258020D2&compId=GD15MPS17H.pdf?ci_sign=14d1367c5878ff582f81892e248f6526f04652cf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 120A
Kind of package: tube
Max. load current: 63A
Features of semiconductor devices: MPS
auf Bestellung 458 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.68 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GD05MPS17H GD05MPS17H GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84B11FA8853E20D2&compId=GD05MPS17H.pdf?ci_sign=7fed59a6ccf4ea391afc1d0c68efe66e4a252466 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 5A; TO247-2; tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Load current: 5A
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 40A
Max. load current: 21A
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Type of diode: Schottky rectifying
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD05MPS17J GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9FC85296732A40D6&compId=GD05MPS17J.pdf?ci_sign=af2301ab8999291a47a82e5d1597f8d58629fe4d Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-7; SiC; SMD; 1.7kV; 5A; tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Load current: 5A
Case: TO263-7
Max. forward voltage: 2.1V
Max. forward impulse current: 40A
Max. load current: 21A
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Type of diode: Schottky rectifying
Mounting: SMD
Produkt ist nicht verfügbar
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GB10MPS17-247 GB10MPS17-247 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F69B42A640C7&compId=GB10MPS17-247.pdf?ci_sign=3ef9c30ec8388b7c1ead11bc136bcddfbaa50834 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Load current: 10A
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 87A
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Type of diode: Schottky rectifying
Mounting: THT
Produkt ist nicht verfügbar
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GB2X50MPS17-227 GB2X50MPS17-227 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6B778B5E0C7&compId=GB2X50MPS17-227.pdf?ci_sign=81d3a7029643fbc5f37062bed79594415507f0a9 Category: Diode modules
Description: Module: diode; double independent; 1.7kV; If: 50Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.7kV
Load current: 50A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 0.432kA
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
Produkt ist nicht verfügbar
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GD2X75MPS17N GD2X75MPS17N GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F77752E3A0C7&compId=GD2X75MPS17N.pdf?ci_sign=2d82b4575164b2eccff1bb0194bf2b8dd9d3da10 Category: Diode modules
Description: Module: diode; double independent; 1.7kV; If: 75Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.7kV
Load current: 75A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
Produkt ist nicht verfügbar
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G3R45MT17K G3R45MT17K GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E2ACF6A0C7&compId=G3R45MT17K.pdf?ci_sign=89d3230475a713b0275b57f836663c202e724959 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 43A
Power dissipation: 438W
Case: TO247-4
Gate-source voltage: -5...15V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 160A
Gate charge: 182nC
Features of semiconductor devices: Kelvin terminal
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
2+37.48 EUR
30+36.04 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
G3R30MT12J G3R30MT12J GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571B180C7&compId=G3R30MT12J.pdf?ci_sign=0ada23b6257d10b9ac0913d4298d6afcf2714799 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W
Mounting: SMD
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 68A
Pulsed drain current: 200A
Power dissipation: 459W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 155nC
Kind of package: tube
Case: TO263-7
Produkt ist nicht verfügbar
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G3R160MT12J G3R160MT12J GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F57F1B31E0C7&compId=G3R160MT12J.pdf?ci_sign=7711d63bda6c26a18677ffe165aeb60e839b555c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 128W
Mounting: SMD
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 128W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 28nC
Kind of package: tube
Case: TO263-7
Produkt ist nicht verfügbar
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G3R40MT12J G3R40MT12J GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F604D1B1E0C7&compId=G3R40MT12J.pdf?ci_sign=5971ae2a03daab2ca6fc1d77ad648df3c201e9a6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W
Mounting: SMD
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 53A
Pulsed drain current: 140A
Power dissipation: 374W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 106nC
Kind of package: tube
Case: TO263-7
Produkt ist nicht verfügbar
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G3R75MT12J G3R75MT12J GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6421FEE20C7&compId=G3R75MT12J.pdf?ci_sign=8f3f624e8aaa07370490dd0c9e18e452c6ac3b7a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W
Mounting: SMD
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 30A
Pulsed drain current: 80A
Power dissipation: 224W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 54nC
Kind of package: tube
Case: TO263-7
Produkt ist nicht verfügbar
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GC2X15MPS12-247 GC2X15MPS12-247 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6A750DF00C7&compId=GC2X15MPS12-247.pdf?ci_sign=178143544f1be58c59460efff2b373df8bffe5f5 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Mounting: THT
Semiconductor structure: common cathode; double
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 120A
Max. off-state voltage: 1.2kV
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.75 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
MBR2X060A120 mbr2x060a120.pdf
MBR2X060A120
Hersteller: GeneSiC Semiconductor
Schottky Rectifier Module Type 120 A
Produkt ist nicht verfügbar
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MBR2X060A150 mbr2x060a150.pdf
Hersteller: GeneSiC Semiconductor
Schottky Rectifier Vrrm 150 V
Produkt ist nicht verfügbar
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MBR2X060A080 mbr2x060a080.pdf
Hersteller: GeneSiC Semiconductor
Schottky Rectifier Module Type 120 A
Produkt ist nicht verfügbar
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MBRH20060R mbrh20060.pdf
Hersteller: GeneSiC Semiconductor
Rectifier Diode Schottky 60V 200A 2-Pin Case D-67
Produkt ist nicht verfügbar
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FR70BR02 fr70b02.pdf
FR70BR02
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 100V 70A 200ns 2-Pin DO-5
Produkt ist nicht verfügbar
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S70YR s70vr.pdf
Hersteller: GeneSiC Semiconductor
Diode Switching 1.6KV 70A 2-Pin DO-5
Produkt ist nicht verfügbar
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S70D s70g.pdf
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 200V 70A 2-Pin DO-5
Produkt ist nicht verfügbar
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S70M s70k.pdf
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 1KV 70A 2-Pin DO-5
Produkt ist nicht verfügbar
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FR70J05 fr70b05.pdf
Hersteller: GeneSiC Semiconductor
Diode Switching 600V 70A 2-Pin DO-5
Produkt ist nicht verfügbar
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S70JR s70g.pdf
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 600V 70A 2-Pin DO-5
Produkt ist nicht verfügbar
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S70DR s70g.pdf
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 200V 70A 2-Pin DO-5
Produkt ist nicht verfügbar
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S70V s70vr.pdf
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 1.4KV 70A 2-Pin DO-5
Produkt ist nicht verfügbar
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S70BR s70g.pdf
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 100V 70A 2-Pin DO-5
Produkt ist nicht verfügbar
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S70B s70g.pdf
Hersteller: GeneSiC Semiconductor
Rectifier Diode Switching 100V 70A 2-Pin DO-5
Produkt ist nicht verfügbar
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MBR6040R 36162614700956272mbr6020_thru_mbr6040r.pdf
Hersteller: GeneSiC Semiconductor
Rectifier Diode Schottky 40V 60A 2-Pin DO-5
Produkt ist nicht verfügbar
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G3R20MT12K pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571AC80C7&compId=G3R20MT12K.pdf?ci_sign=24c5cc08cfe874c5b61f676ade8dcc0043159f11
G3R20MT12K
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 219nC
On-state resistance: 20mΩ
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 542W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
auf Bestellung 569 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+38.94 EUR
3+37.42 EUR
10+37.24 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
G3R30MT12K pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571B2C0C7&compId=G3R30MT12K.pdf?ci_sign=417d67b664418281382a923165baa7b388c1663a
G3R30MT12K
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 155nC
On-state resistance: 30mΩ
Drain current: 63A
Pulsed drain current: 200A
Power dissipation: 400W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
Produkt ist nicht verfügbar
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G3R40MT12K pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793E540C7&compId=G3R40MT12K.pdf?ci_sign=d330f694272859cc9115703241ced6feb09b3bf0
G3R40MT12K
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 106nC
On-state resistance: 40mΩ
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 333W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.73 EUR
Mindestbestellmenge: 4
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G3R75MT12K pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6421FEF60C7&compId=G3R75MT12K.pdf?ci_sign=4ade885997dd7890cf368c2735032911b1ba9f38
G3R75MT12K
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 54nC
On-state resistance: 75mΩ
Drain current: 29A
Pulsed drain current: 80A
Power dissipation: 207W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
auf Bestellung 461 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.11 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
G2R1000MT17J pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5006EA960C7&compId=G2R1000MT17J.pdf?ci_sign=9f1568725f74f7b947922ae5bebc5e8f409c5571
G2R1000MT17J
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7
Mounting: SMD
Power dissipation: 54W
Drain-source voltage: 1.7kV
Kind of channel: enhancement
Technology: G2R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Case: TO263-7
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
On-state resistance: 1Ω
Drain current: 4A
Pulsed drain current: 8A
auf Bestellung 188 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.84 EUR
12+6.11 EUR
Mindestbestellmenge: 11
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G3R20MT12N pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571ADC0C7&compId=G3R20MT12N.pdf?ci_sign=867d61cd446a78630c72e74f61a8649267248476
G3R20MT12N
Hersteller: GeneSiC SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 74A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 240A
Power dissipation: 365W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+60.93 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
G3R20MT17N pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571B040C7&compId=G3R20MT17N.pdf?ci_sign=afc1eeace1efd0fdabc1ddaf96306901c2848764
G3R20MT17N
Hersteller: GeneSiC SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 70A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 300A
Power dissipation: 523W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+138.62 EUR
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G3R75MT12D pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793EB80C7&compId=G3R75MT12D.pdf?ci_sign=15ac56251724ba4e0af9a71a5fc5a4fda96229ad
G3R75MT12D
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Drain-source voltage: 1.2kV
Drain current: 29A
Case: TO247-3
On-state resistance: 75mΩ
Pulsed drain current: 80A
Power dissipation: 207W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 54nC
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.6 EUR
10+11.15 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GC02MPS12-220 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6B778B9A0C7&compId=GC02MPS12-220.pdf?ci_sign=5b7cd32c33a073a9b17522300153aa93377d3d17
GC02MPS12-220
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 16A
Kind of package: tube
Features of semiconductor devices: MPS
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
G3R350MT12D pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571B400C7&compId=G3R350MT12D.pdf?ci_sign=b08bdf2e36df35986c19da23f6988a87e11ba7b7
G3R350MT12D
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W
Drain-source voltage: 1.2kV
Drain current: 8A
Case: TO247-3
On-state resistance: 0.35Ω
Pulsed drain current: 16A
Power dissipation: 74W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 12nC
auf Bestellung 374 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.65 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
GD20MPS12H GD20MPS12H.pdf
GD20MPS12H
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 27A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.9V
Max. forward impulse current: 128A
Kind of package: tube
Max. load current: 67A
Features of semiconductor devices: MPS
auf Bestellung 531 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.18 EUR
10+7.55 EUR
11+7.14 EUR
30+7.05 EUR
120+6.86 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
GD10MPS12H GD10MPS12H.pdf
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO247-2; tube
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 16A
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 64A
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Produkt ist nicht verfügbar
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GD2X100MPS06N pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84B0D7831F3880D2&compId=GD2X100MPS06N.pdf?ci_sign=1b2ed4d223639b685bea14afaa75997f05600f5d
GD2X100MPS06N
Hersteller: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Features of semiconductor devices: MPS
Kind of package: tube
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Technology: SiC
Reverse recovery time: 10ns
Max. forward voltage: 1.8V
Load current: 108A x2
Max. load current: 231A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 650V
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+56.94 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
GD2X30MPS06N pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F71CC1F860C7&compId=GD2X30MPS06N.pdf?ci_sign=efe1bfcbb3de999f478691de546827d7c91eaa55
GD2X30MPS06N
Hersteller: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Features of semiconductor devices: MPS
Kind of package: tube
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Technology: SiC
Reverse recovery time: 10ns
Max. forward voltage: 1.5V
Load current: 30A x2
Max. load current: 60A
Max. forward impulse current: 0.168kA
Max. off-state voltage: 650V
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+25.38 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
GD20MPS12A GD20MPS12A.pdf
GD20MPS12A
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 29A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.9V
Max. forward impulse current: 128A
Kind of package: tube
Max. load current: 67A
Features of semiconductor devices: MPS
auf Bestellung 1107 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.95 EUR
14+5.18 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
G3R450MT17D pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793E680C7&compId=G3R450MT17D.pdf?ci_sign=623c2d7bc68ab7ce63fe93b60466746ffbe3ca5f
G3R450MT17D
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W
Kind of package: tube
Kind of channel: enhancement
Technology: G3R™; SiC
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 18nC
On-state resistance: 0.45Ω
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 88W
Drain-source voltage: 1.7kV
Case: TO247-3
auf Bestellung 407 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.18 EUR
12+6.08 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
G3R450MT17J pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793E7C0C7&compId=G3R450MT17J.pdf?ci_sign=fb6f69167c3c5663eef111d5bcd6739f8e8e0312
G3R450MT17J
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 91W
Kind of package: tube
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 18nC
On-state resistance: 0.45Ω
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 91W
Drain-source voltage: 1.7kV
Case: TO263-7
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.72 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
G3R40MT12D pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F604D1B0A0C7&compId=G3R40MT12D.pdf?ci_sign=80928ea7e4b37e0193cc95578c620c2ccb46972c
G3R40MT12D
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Drain-source voltage: 1.2kV
Drain current: 50A
Case: TO247-3
On-state resistance: 40mΩ
Pulsed drain current: 140A
Power dissipation: 333W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 106nC
auf Bestellung 671 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.55 EUR
5+17.53 EUR
30+16.86 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
G3R160MT12D pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F57F1B3060C7&compId=G3R160MT12D.pdf?ci_sign=086ae24aaa3e50a514892fe6bd224ecc7bfc54d3
G3R160MT12D
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W
Drain-source voltage: 1.2kV
Drain current: 16A
Case: TO247-3
On-state resistance: 0.16Ω
Pulsed drain current: 40A
Power dissipation: 123W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 28nC
auf Bestellung 845 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.39 EUR
11+6.66 EUR
30+6.42 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
GD30MPS06H pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F77752E4E0C7&compId=GD30MPS06H.pdf?ci_sign=bc0db00698f6eb923b7417426a9d9ec5d86880bb
GD30MPS06H
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 0.168kA
Kind of package: tube
Features of semiconductor devices: MPS
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.01 EUR
11+6.76 EUR
12+6.39 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
GD10MPS17H pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F71CC1F720C7&compId=GD10MPS17H.pdf?ci_sign=b05d9cf7c1fa201ac9405cf96058e406639b928a
GD10MPS17H
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 42A
Features of semiconductor devices: MPS
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.37 EUR
9+8.24 EUR
10+7.79 EUR
120+7.52 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
GD15MPS17H pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84B12914258020D2&compId=GD15MPS17H.pdf?ci_sign=14d1367c5878ff582f81892e248f6526f04652cf
GD15MPS17H
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 120A
Kind of package: tube
Max. load current: 63A
Features of semiconductor devices: MPS
auf Bestellung 458 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.68 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GD05MPS17H pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84B11FA8853E20D2&compId=GD05MPS17H.pdf?ci_sign=7fed59a6ccf4ea391afc1d0c68efe66e4a252466
GD05MPS17H
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 5A; TO247-2; tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Load current: 5A
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 40A
Max. load current: 21A
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Type of diode: Schottky rectifying
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD05MPS17J pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9FC85296732A40D6&compId=GD05MPS17J.pdf?ci_sign=af2301ab8999291a47a82e5d1597f8d58629fe4d
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-7; SiC; SMD; 1.7kV; 5A; tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Load current: 5A
Case: TO263-7
Max. forward voltage: 2.1V
Max. forward impulse current: 40A
Max. load current: 21A
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Type of diode: Schottky rectifying
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GB10MPS17-247 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F69B42A640C7&compId=GB10MPS17-247.pdf?ci_sign=3ef9c30ec8388b7c1ead11bc136bcddfbaa50834
GB10MPS17-247
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Load current: 10A
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 87A
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Type of diode: Schottky rectifying
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GB2X50MPS17-227 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6B778B5E0C7&compId=GB2X50MPS17-227.pdf?ci_sign=81d3a7029643fbc5f37062bed79594415507f0a9
GB2X50MPS17-227
Hersteller: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; If: 50Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.7kV
Load current: 50A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 0.432kA
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD2X75MPS17N pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F77752E3A0C7&compId=GD2X75MPS17N.pdf?ci_sign=2d82b4575164b2eccff1bb0194bf2b8dd9d3da10
GD2X75MPS17N
Hersteller: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.7kV; If: 75Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.7kV
Load current: 75A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G3R45MT17K pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E2ACF6A0C7&compId=G3R45MT17K.pdf?ci_sign=89d3230475a713b0275b57f836663c202e724959
G3R45MT17K
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 43A
Power dissipation: 438W
Case: TO247-4
Gate-source voltage: -5...15V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 160A
Gate charge: 182nC
Features of semiconductor devices: Kelvin terminal
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+37.48 EUR
30+36.04 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
G3R30MT12J pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571B180C7&compId=G3R30MT12J.pdf?ci_sign=0ada23b6257d10b9ac0913d4298d6afcf2714799
G3R30MT12J
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W
Mounting: SMD
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 68A
Pulsed drain current: 200A
Power dissipation: 459W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 155nC
Kind of package: tube
Case: TO263-7
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G3R160MT12J pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F57F1B31E0C7&compId=G3R160MT12J.pdf?ci_sign=7711d63bda6c26a18677ffe165aeb60e839b555c
G3R160MT12J
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 128W
Mounting: SMD
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 128W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 28nC
Kind of package: tube
Case: TO263-7
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G3R40MT12J pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F604D1B1E0C7&compId=G3R40MT12J.pdf?ci_sign=5971ae2a03daab2ca6fc1d77ad648df3c201e9a6
G3R40MT12J
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W
Mounting: SMD
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 53A
Pulsed drain current: 140A
Power dissipation: 374W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 106nC
Kind of package: tube
Case: TO263-7
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G3R75MT12J pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6421FEE20C7&compId=G3R75MT12J.pdf?ci_sign=8f3f624e8aaa07370490dd0c9e18e452c6ac3b7a
G3R75MT12J
Hersteller: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W
Mounting: SMD
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: G3R™; SiC
Kind of channel: enhancement
Drain current: 30A
Pulsed drain current: 80A
Power dissipation: 224W
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...15V
Gate charge: 54nC
Kind of package: tube
Case: TO263-7
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC2X15MPS12-247 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6A750DF00C7&compId=GC2X15MPS12-247.pdf?ci_sign=178143544f1be58c59460efff2b373df8bffe5f5
GC2X15MPS12-247
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Mounting: THT
Semiconductor structure: common cathode; double
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 15A x2
Max. load current: 30A
Max. forward impulse current: 120A
Max. off-state voltage: 1.2kV
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.75 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
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