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IRLR3103TRPBF IRLR3103TRPBF INFINEON TECHNOLOGIES irlr3103pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
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IRLR3105TRPBF IRLR3105TRPBF INFINEON TECHNOLOGIES irlr3105pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 57W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3110ZTRLPBF INFINEON TECHNOLOGIES irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 14mΩ
Gate-source voltage: ±16V
Pulsed drain current: 250A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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IRLR3110ZTRPBF IRLR3110ZTRPBF INFINEON TECHNOLOGIES irlr3110zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1057 Stücke:
Lieferzeit 7-14 Tag (e)
35+2.06 EUR
41+1.77 EUR
67+1.07 EUR
71+1.02 EUR
10000+0.99 EUR
Mindestbestellmenge: 35
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IRLR3114ZTRPBF IRLR3114ZTRPBF INFINEON TECHNOLOGIES irlr3114zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
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IRLR3410TRLPBF INFINEON TECHNOLOGIES irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.105Ω
Gate-source voltage: ±16V
Pulsed drain current: 60A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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IRLR3410TRPBF IRLR3410TRPBF INFINEON TECHNOLOGIES irlr3410pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1984 Stücke:
Lieferzeit 7-14 Tag (e)
55+1.32 EUR
77+0.93 EUR
160+0.45 EUR
169+0.42 EUR
2000+0.41 EUR
Mindestbestellmenge: 55
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IRLR3410TRRPBF IRLR3410TRRPBF INFINEON TECHNOLOGIES irlr3410pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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IRLR3636TRPBF IRLR3636TRPBF INFINEON TECHNOLOGIES IRLR3636TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Power dissipation: 143W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
4+17.88 EUR
10+7.15 EUR
22+3.25 EUR
61+1.17 EUR
6000+0.72 EUR
Mindestbestellmenge: 4
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IRLR3705ZTRPBF IRLR3705ZTRPBF INFINEON TECHNOLOGIES IRLR3705ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1764 Stücke:
Lieferzeit 7-14 Tag (e)
37+1.94 EUR
43+1.67 EUR
58+1.24 EUR
62+1.17 EUR
500+1.13 EUR
Mindestbestellmenge: 37
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IRLR3915TRPBF IRLR3915TRPBF INFINEON TECHNOLOGIES IRLR3915TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 61A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
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IRLR6225TRPBF IRLR6225TRPBF INFINEON TECHNOLOGIES irlr6225pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.51 EUR
28+2.56 EUR
76+0.94 EUR
1000+0.56 EUR
Mindestbestellmenge: 11
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IRLR7833TRPBF IRLR7833TRPBF INFINEON TECHNOLOGIES irlr7833pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 140A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
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IRLR7843TRPBF IRLR7843TRPBF INFINEON TECHNOLOGIES IRLR7843TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1615 Stücke:
Lieferzeit 7-14 Tag (e)
43+1.69 EUR
57+1.27 EUR
61+1.17 EUR
81+0.89 EUR
87+0.83 EUR
500+0.82 EUR
Mindestbestellmenge: 43
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IRLR8103VTRPBF IRLR8103VTRPBF INFINEON TECHNOLOGIES irlr8103vpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8256TRPBF IRLR8256TRPBF INFINEON TECHNOLOGIES irlr8256pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 81A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
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IRLR8726TRPBF IRLR8726TRPBF INFINEON TECHNOLOGIES irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 5.8mΩ
Gate-source voltage: ±20V
Pulsed drain current: 340A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1990 Stücke:
Lieferzeit 7-14 Tag (e)
99+0.73 EUR
132+0.54 EUR
160+0.45 EUR
241+0.30 EUR
256+0.28 EUR
1000+0.27 EUR
Mindestbestellmenge: 99
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IRLR8743TRPBF IRLR8743TRPBF INFINEON TECHNOLOGIES irlr8743pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)
2000+1.04 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
IRLR9343TRPBF IRLR9343TRPBF INFINEON TECHNOLOGIES irlr9343pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -20A; 79W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -20A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
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IRLS3034TRLPBF IRLS3034TRLPBF INFINEON TECHNOLOGIES IRLS3034TRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
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IRLS3036TRL7PP IRLS3036TRL7PP INFINEON TECHNOLOGIES irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Mounting: SMD
Drain-source voltage: 60V
Drain current: 210A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 380W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 1kA
Case: D2PAK-7
Anzahl je Verpackung: 1 Stücke
auf Bestellung 498 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.33 EUR
19+3.90 EUR
23+3.13 EUR
25+2.96 EUR
800+2.89 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRLS3036TRLPBF INFINEON TECHNOLOGIES irls3036pbf.pdf?fileId=5546d462533600a401535671c778270d IRLS3036TRLPBF SMD N channel transistors
Produkt ist nicht verfügbar
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IRLS3813TRLPBF INFINEON TECHNOLOGIES irls3813pbf.pdf?fileId=5546d462533600a401535671d1082710 IRLS3813TRLPBF SMD N channel transistors
Produkt ist nicht verfügbar
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IRLS4030TRLPBF IRLS4030TRLPBF INFINEON TECHNOLOGIES IRLS4030TRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
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IRLTS2242TRPBF IRLTS2242TRPBF INFINEON TECHNOLOGIES irlts2242pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3336 Stücke:
Lieferzeit 7-14 Tag (e)
122+0.59 EUR
152+0.47 EUR
219+0.33 EUR
424+0.17 EUR
447+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 122
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IRLTS6342TRPBF IRLTS6342TRPBF INFINEON TECHNOLOGIES irlts6342pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 688 Stücke:
Lieferzeit 7-14 Tag (e)
112+0.64 EUR
162+0.44 EUR
194+0.37 EUR
224+0.32 EUR
253+0.28 EUR
268+0.27 EUR
Mindestbestellmenge: 112
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IRLU024NPBF IRLU024NPBF INFINEON TECHNOLOGIES irlr024npbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 814 Stücke:
Lieferzeit 7-14 Tag (e)
88+0.82 EUR
140+0.51 EUR
166+0.43 EUR
175+0.41 EUR
525+0.40 EUR
1050+0.39 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
IRLU120NPBF IRLU120NPBF INFINEON TECHNOLOGIES irlr120npbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 0.185Ω
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 114 Stücke:
Lieferzeit 7-14 Tag (e)
63+1.14 EUR
110+0.65 EUR
114+0.63 EUR
10050+0.42 EUR
Mindestbestellmenge: 63
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IRLU3110ZPBF IRLU3110ZPBF INFINEON TECHNOLOGIES irlr3110zpbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 34nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 124 Stücke:
Lieferzeit 7-14 Tag (e)
29+2.47 EUR
52+1.39 EUR
57+1.26 EUR
61+1.19 EUR
300+1.17 EUR
3000+1.14 EUR
Mindestbestellmenge: 29
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IRLU3410PBF IRLU3410PBF INFINEON TECHNOLOGIES irlr3410pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLU7843PBF IRLU7843PBF INFINEON TECHNOLOGIES irlr7843pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; IPAK
Drain-source voltage: 30V
Drain current: 161A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Mounting: THT
Case: IPAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRLU8743PBF IRLU8743PBF INFINEON TECHNOLOGIES irlr8743pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRLZ24NPBF IRLZ24NPBF INFINEON TECHNOLOGIES Infineon-IRLZ24N-DataSheet-v01_01-EN.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 18A; 45W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 18A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±16V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 10nC
On-state resistance: 60mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 343 Stücke:
Lieferzeit 7-14 Tag (e)
68+1.06 EUR
98+0.74 EUR
146+0.49 EUR
154+0.46 EUR
Mindestbestellmenge: 68
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IRLZ24NSTRLPBF IRLZ24NSTRLPBF INFINEON TECHNOLOGIES irlz24nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 18A; 45W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 18A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±16V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
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IRLZ34NPBF IRLZ34NPBF INFINEON TECHNOLOGIES irlz34n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 369 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.76 EUR
73+0.99 EUR
162+0.44 EUR
172+0.42 EUR
Mindestbestellmenge: 41
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IRLZ34NSTRLPBF INFINEON TECHNOLOGIES irlz34nspbf.pdf?fileId=5546d462533600a40153567210152722 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
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IRLZ44NPBF IRLZ44NPBF INFINEON TECHNOLOGIES irlz44n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate-source voltage: ±16V
Kind of package: tube
Gate charge: 32nC
On-state resistance: 22mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 317 Stücke:
Lieferzeit 7-14 Tag (e)
49+1.49 EUR
81+0.89 EUR
131+0.55 EUR
138+0.52 EUR
Mindestbestellmenge: 49
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IRLZ44NSTRLPBF IRLZ44NSTRLPBF INFINEON TECHNOLOGIES irlz44nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
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IRLZ44ZSTRLPBF IRLZ44ZSTRLPBF INFINEON TECHNOLOGIES irlz44zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 51A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 51A
Power dissipation: 80W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
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IRMCK099M IRMCK099M INFINEON TECHNOLOGIES IRMCK099M.pdf Category: Motor and PWM drivers
Description: IC: driver; DMC,3-phase motor controller; iMOTION™; QFN32; 73.5mA
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Case: QFN32
Operating voltage: 3...3.6V DC
Frequency: 1...20kHz
Output current: 73.5mA
Type of integrated circuit: driver
Interface: I2C; JTAG; UART
Clock frequency: 100MHz
Integrated circuit features: current monitoring; FOC; internal temperature sensor; MCE; PMSM
Technology: iMOTION™
Kind of integrated circuit: 3-phase motor controller; DMC
Anzahl je Verpackung: 2450 Stücke
Produkt ist nicht verfügbar
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IRS10752LTRPBF IRS10752LTRPBF INFINEON TECHNOLOGIES IRS10752ltrpbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Mounting: SMD
Case: SOT23-6
Operating temperature: -40...125°C
Turn-on time: 225ns
Turn-off time: 255ns
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 100V
Supply voltage: 10...18V DC
Output current: -240...160mA
Type of integrated circuit: driver
Number of channels: 1
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRS2003STRPBF IRS2003STRPBF INFINEON TECHNOLOGIES irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 750ns
Turn-off time: 180ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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IRS2005STRPBF IRS2005STRPBF INFINEON TECHNOLOGIES irs2005s.pdf?fileId=5546d462533600a4015364c4246229e1 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 160ns
Turn-off time: 150ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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IRS2007SPBF IRS2007SPBF INFINEON TECHNOLOGIES IRS2007SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 160ns
Turn-off time: 150ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRS2008SPBF IRS2008SPBF INFINEON TECHNOLOGIES IRS2008S.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 750ns
Turn-off time: 180ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Anzahl je Verpackung: 3800 Stücke
Produkt ist nicht verfügbar
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IRS2011PBF IRS2011PBF INFINEON TECHNOLOGIES irs2011pbf.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Mounting: THT
Supply voltage: 10...20V DC
Number of channels: 2
Case: DIP8
Kind of package: tube
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 1W
Turn-on time: 85ns
Turn-off time: 75ns
Output current: -1...1A
Kind of integrated circuit: gate driver; high-/low-side
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRS20752LTRPBF IRS20752LTRPBF INFINEON TECHNOLOGIES IRS20752ltrpbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Case: SOT23-6
Type of integrated circuit: driver
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 200V
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 10...18V DC
Turn-on time: 225ns
Turn-off time: 255ns
Output current: -240...160mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2736 Stücke:
Lieferzeit 7-14 Tag (e)
79+0.92 EUR
88+0.82 EUR
95+0.76 EUR
114+0.63 EUR
120+0.60 EUR
1000+0.57 EUR
Mindestbestellmenge: 79
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IRS2092STRPBF IRS2092STRPBF INFINEON TECHNOLOGIES IRS2092.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
Frequency: 800kHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1769 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.83 EUR
28+2.57 EUR
30+2.43 EUR
100+2.39 EUR
250+2.35 EUR
Mindestbestellmenge: 19
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IRS2093MTRPBF INFINEON TECHNOLOGIES IRS2093MTRPBF.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 4
Amplifier class: D
Case: MLPQ48
Kind of package: reel; tape
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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IRS20957STRPBF IRS20957STRPBF INFINEON TECHNOLOGIES IRS20957S.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1630 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.10 EUR
26+2.76 EUR
28+2.60 EUR
100+2.57 EUR
250+2.50 EUR
Mindestbestellmenge: 18
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IRS2101SPBF IRS2101SPBF INFINEON TECHNOLOGIES irs2101pbf.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 230ns
Turn-off time: 185ns
Part status: Not recommended for new designs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRS2103STRPBF INFINEON TECHNOLOGIES irs2103.pdf?fileId=5546d462533600a4015356762b71279f IRS2103STRPBF MOSFET/IGBT drivers
Produkt ist nicht verfügbar
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IRS2104SPBF IRS2104SPBF INFINEON TECHNOLOGIES irs2104.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 139 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.82 EUR
42+1.73 EUR
53+1.37 EUR
55+1.30 EUR
Mindestbestellmenge: 40
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IRS21064PBF IRS21064PBF INFINEON TECHNOLOGIES irs2106.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Mounting: THT
Case: DIP14
Supply voltage: 10...20V DC
Turn-on time: 320ns
Turn-off time: 235ns
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Operating temperature: -40...125°C
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)
15+5.05 EUR
16+4.48 EUR
18+4.10 EUR
19+3.89 EUR
25+3.73 EUR
Mindestbestellmenge: 15
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IRS21064SPBF IRS21064SPBF INFINEON TECHNOLOGIES irs2106.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRS2106PBF INFINEON TECHNOLOGIES INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw IRS2106PBF MOSFET/IGBT drivers
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IRS2106SPBF IRS2106SPBF INFINEON TECHNOLOGIES irs2106.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRS2108PBF IRS2108PBF INFINEON TECHNOLOGIES irs2108.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRS2108SPBF IRS2108SPBF INFINEON TECHNOLOGIES irs2108.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Supply voltage: 10...20V DC
Turn-on time: 320ns
Turn-off time: 235ns
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Operating temperature: -40...125°C
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 89 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.20 EUR
26+2.85 EUR
30+2.46 EUR
31+2.32 EUR
Mindestbestellmenge: 23
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IRS21094PBF IRS21094PBF INFINEON TECHNOLOGIES irs2109.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Mounting: THT
Case: DIP14
Supply voltage: 10...20V DC
Turn-on time: 850ns
Turn-off time: 235ns
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Operating temperature: -40...125°C
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 106 Stücke:
Lieferzeit 7-14 Tag (e)
46+1.59 EUR
48+1.52 EUR
Mindestbestellmenge: 46
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IRLR3103TRPBF irlr3103pbf.pdf
IRLR3103TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
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IRLR3105TRPBF irlr3105pbf.pdf
IRLR3105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 57W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
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IRLR3110ZTRLPBF irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 14mΩ
Gate-source voltage: ±16V
Pulsed drain current: 250A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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IRLR3110ZTRPBF irlr3110zpbf.pdf
IRLR3110ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1057 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
35+2.06 EUR
41+1.77 EUR
67+1.07 EUR
71+1.02 EUR
10000+0.99 EUR
Mindestbestellmenge: 35
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IRLR3114ZTRPBF irlr3114zpbf.pdf
IRLR3114ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
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IRLR3410TRLPBF irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.105Ω
Gate-source voltage: ±16V
Pulsed drain current: 60A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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IRLR3410TRPBF description irlr3410pbf.pdf
IRLR3410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1984 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
55+1.32 EUR
77+0.93 EUR
160+0.45 EUR
169+0.42 EUR
2000+0.41 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3410TRRPBF irlr3410pbf.pdf
IRLR3410TRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3636TRPBF IRLR3636TRPBF.pdf
IRLR3636TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Power dissipation: 143W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+17.88 EUR
10+7.15 EUR
22+3.25 EUR
61+1.17 EUR
6000+0.72 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3705ZTRPBF IRLR3705ZTRPBF.pdf
IRLR3705ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1764 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
37+1.94 EUR
43+1.67 EUR
58+1.24 EUR
62+1.17 EUR
500+1.13 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3915TRPBF IRLR3915TRPBF.pdf
IRLR3915TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 61A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR6225TRPBF irlr6225pbf.pdf
IRLR6225TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.51 EUR
28+2.56 EUR
76+0.94 EUR
1000+0.56 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IRLR7833TRPBF irlr7833pbf.pdf
IRLR7833TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 140A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR7843TRPBF IRLR7843TRPBF.pdf
IRLR7843TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1615 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
43+1.69 EUR
57+1.27 EUR
61+1.17 EUR
81+0.89 EUR
87+0.83 EUR
500+0.82 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8103VTRPBF irlr8103vpbf.pdf
IRLR8103VTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8256TRPBF irlr8256pbf.pdf
IRLR8256TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 81A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8726TRPBF irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7
IRLR8726TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 5.8mΩ
Gate-source voltage: ±20V
Pulsed drain current: 340A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1990 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
99+0.73 EUR
132+0.54 EUR
160+0.45 EUR
241+0.30 EUR
256+0.28 EUR
1000+0.27 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8743TRPBF irlr8743pbf.pdf
IRLR8743TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2000+1.04 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
IRLR9343TRPBF irlr9343pbf.pdf
IRLR9343TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -20A; 79W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -20A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLS3034TRLPBF IRLS3034TRLPBF.pdf
IRLS3034TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLS3036TRL7PP irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b
IRLS3036TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Mounting: SMD
Drain-source voltage: 60V
Drain current: 210A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 380W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 1kA
Case: D2PAK-7
Anzahl je Verpackung: 1 Stücke
auf Bestellung 498 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
17+4.33 EUR
19+3.90 EUR
23+3.13 EUR
25+2.96 EUR
800+2.89 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRLS3036TRLPBF irls3036pbf.pdf?fileId=5546d462533600a401535671c778270d
Hersteller: INFINEON TECHNOLOGIES
IRLS3036TRLPBF SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLS3813TRLPBF irls3813pbf.pdf?fileId=5546d462533600a401535671d1082710
Hersteller: INFINEON TECHNOLOGIES
IRLS3813TRLPBF SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLS4030TRLPBF IRLS4030TRLPBF.pdf
IRLS4030TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLTS2242TRPBF irlts2242pbf.pdf
IRLTS2242TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3336 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
122+0.59 EUR
152+0.47 EUR
219+0.33 EUR
424+0.17 EUR
447+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
IRLTS6342TRPBF irlts6342pbf.pdf
IRLTS6342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 688 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
112+0.64 EUR
162+0.44 EUR
194+0.37 EUR
224+0.32 EUR
253+0.28 EUR
268+0.27 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
IRLU024NPBF description irlr024npbf.pdf
IRLU024NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 814 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
88+0.82 EUR
140+0.51 EUR
166+0.43 EUR
175+0.41 EUR
525+0.40 EUR
1050+0.39 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
IRLU120NPBF description irlr120npbf.pdf
IRLU120NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 0.185Ω
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 114 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
63+1.14 EUR
110+0.65 EUR
114+0.63 EUR
10050+0.42 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
IRLU3110ZPBF description irlr3110zpbf.pdf
IRLU3110ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 34nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 124 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
29+2.47 EUR
52+1.39 EUR
57+1.26 EUR
61+1.19 EUR
300+1.17 EUR
3000+1.14 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IRLU3410PBF irlr3410pbf.pdf
IRLU3410PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLU7843PBF irlr7843pbf.pdf
IRLU7843PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; IPAK
Drain-source voltage: 30V
Drain current: 161A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Mounting: THT
Case: IPAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLU8743PBF description irlr8743pbf.pdf
IRLU8743PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ24NPBF Infineon-IRLZ24N-DataSheet-v01_01-EN.pdf
IRLZ24NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 18A; 45W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 18A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±16V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 10nC
On-state resistance: 60mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 343 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
68+1.06 EUR
98+0.74 EUR
146+0.49 EUR
154+0.46 EUR
Mindestbestellmenge: 68
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ24NSTRLPBF irlz24nspbf.pdf
IRLZ24NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 18A; 45W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 18A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±16V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ34NPBF description irlz34n.pdf
IRLZ34NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 369 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
41+1.76 EUR
73+0.99 EUR
162+0.44 EUR
172+0.42 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ34NSTRLPBF irlz34nspbf.pdf?fileId=5546d462533600a40153567210152722
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ44NPBF description irlz44n.pdf
IRLZ44NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate-source voltage: ±16V
Kind of package: tube
Gate charge: 32nC
On-state resistance: 22mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 317 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
49+1.49 EUR
81+0.89 EUR
131+0.55 EUR
138+0.52 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ44NSTRLPBF irlz44nspbf.pdf
IRLZ44NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
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IRLZ44ZSTRLPBF irlz44zpbf.pdf
IRLZ44ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 51A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 51A
Power dissipation: 80W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
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IRMCK099M IRMCK099M.pdf
IRMCK099M
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; DMC,3-phase motor controller; iMOTION™; QFN32; 73.5mA
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Case: QFN32
Operating voltage: 3...3.6V DC
Frequency: 1...20kHz
Output current: 73.5mA
Type of integrated circuit: driver
Interface: I2C; JTAG; UART
Clock frequency: 100MHz
Integrated circuit features: current monitoring; FOC; internal temperature sensor; MCE; PMSM
Technology: iMOTION™
Kind of integrated circuit: 3-phase motor controller; DMC
Anzahl je Verpackung: 2450 Stücke
Produkt ist nicht verfügbar
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IRS10752LTRPBF IRS10752ltrpbf.pdf
IRS10752LTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Mounting: SMD
Case: SOT23-6
Operating temperature: -40...125°C
Turn-on time: 225ns
Turn-off time: 255ns
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 100V
Supply voltage: 10...18V DC
Output current: -240...160mA
Type of integrated circuit: driver
Number of channels: 1
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRS2003STRPBF irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780
IRS2003STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 750ns
Turn-off time: 180ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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IRS2005STRPBF irs2005s.pdf?fileId=5546d462533600a4015364c4246229e1
IRS2005STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 160ns
Turn-off time: 150ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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IRS2007SPBF IRS2007SPBF.pdf
IRS2007SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 160ns
Turn-off time: 150ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRS2008SPBF IRS2008S.pdf
IRS2008SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 750ns
Turn-off time: 180ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Anzahl je Verpackung: 3800 Stücke
Produkt ist nicht verfügbar
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IRS2011PBF description irs2011pbf.pdf
IRS2011PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Mounting: THT
Supply voltage: 10...20V DC
Number of channels: 2
Case: DIP8
Kind of package: tube
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 1W
Turn-on time: 85ns
Turn-off time: 75ns
Output current: -1...1A
Kind of integrated circuit: gate driver; high-/low-side
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRS20752LTRPBF IRS20752ltrpbf.pdf
IRS20752LTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Case: SOT23-6
Type of integrated circuit: driver
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 200V
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 10...18V DC
Turn-on time: 225ns
Turn-off time: 255ns
Output current: -240...160mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2736 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
79+0.92 EUR
88+0.82 EUR
95+0.76 EUR
114+0.63 EUR
120+0.60 EUR
1000+0.57 EUR
Mindestbestellmenge: 79
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IRS2092STRPBF IRS2092.pdf
IRS2092STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
Frequency: 800kHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1769 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
19+3.83 EUR
28+2.57 EUR
30+2.43 EUR
100+2.39 EUR
250+2.35 EUR
Mindestbestellmenge: 19
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IRS2093MTRPBF IRS2093MTRPBF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 4
Amplifier class: D
Case: MLPQ48
Kind of package: reel; tape
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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IRS20957STRPBF IRS20957S.pdf
IRS20957STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1630 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+4.10 EUR
26+2.76 EUR
28+2.60 EUR
100+2.57 EUR
250+2.50 EUR
Mindestbestellmenge: 18
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IRS2101SPBF description irs2101pbf.pdf
IRS2101SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 230ns
Turn-off time: 185ns
Part status: Not recommended for new designs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRS2103STRPBF irs2103.pdf?fileId=5546d462533600a4015356762b71279f
Hersteller: INFINEON TECHNOLOGIES
IRS2103STRPBF MOSFET/IGBT drivers
Produkt ist nicht verfügbar
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IRS2104SPBF irs2104.pdf
IRS2104SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 139 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
40+1.82 EUR
42+1.73 EUR
53+1.37 EUR
55+1.30 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IRS21064PBF irs2106.pdf
IRS21064PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Mounting: THT
Case: DIP14
Supply voltage: 10...20V DC
Turn-on time: 320ns
Turn-off time: 235ns
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Operating temperature: -40...125°C
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+5.05 EUR
16+4.48 EUR
18+4.10 EUR
19+3.89 EUR
25+3.73 EUR
Mindestbestellmenge: 15
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IRS21064SPBF irs2106.pdf
IRS21064SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRS2106PBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
IRS2106PBF MOSFET/IGBT drivers
Produkt ist nicht verfügbar
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IRS2106SPBF irs2106.pdf
IRS2106SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRS2108PBF irs2108.pdf
IRS2108PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRS2108SPBF irs2108.pdf
IRS2108SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Supply voltage: 10...20V DC
Turn-on time: 320ns
Turn-off time: 235ns
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Operating temperature: -40...125°C
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 89 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.20 EUR
26+2.85 EUR
30+2.46 EUR
31+2.32 EUR
Mindestbestellmenge: 23
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IRS21094PBF description irs2109.pdf
IRS21094PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Mounting: THT
Case: DIP14
Supply voltage: 10...20V DC
Turn-on time: 850ns
Turn-off time: 235ns
Output current: -600...290mA
Type of integrated circuit: driver
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Operating temperature: -40...125°C
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 106 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
46+1.59 EUR
48+1.52 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
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