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IR2183SPBF IR2183SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA37A807C1553D7&compId=IR2183SPBF.pdf?ci_sign=1842ad47fa85b992a3d7b9b7c6d4ee278eb4f9ff Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 73 Stücke:
Lieferzeit 7-14 Tag (e)
15+5.05 EUR
21+3.55 EUR
22+3.35 EUR
Mindestbestellmenge: 15
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IR21844PBF IR21844PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2.3...1.9A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
3+23.84 EUR
4+17.88 EUR
11+6.51 EUR
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IR21844SPBF IR21844SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.7 EUR
31+2.37 EUR
32+2.25 EUR
Mindestbestellmenge: 16
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IR21844STRPBF IR21844STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 2500 Stücke
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IR2184PBF IR2184PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 73 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.59 EUR
32+2.27 EUR
34+2.14 EUR
500+2.12 EUR
1000+2.06 EUR
Mindestbestellmenge: 20
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IR2184SPBF IR2184SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.96 EUR
20+3.58 EUR
27+2.75 EUR
28+2.59 EUR
Mindestbestellmenge: 19
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IR2184STRPBF IR2184STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2487 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.2 EUR
19+3.93 EUR
34+2.12 EUR
36+1.99 EUR
Mindestbestellmenge: 18
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IR2213PBF INFINEON TECHNOLOGIES ir2213.pdf?fileId=5546d462533600a4015355c9621716d8 IR2213PBF MOSFET/IGBT drivers
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
6+11.91 EUR
7+10.21 EUR
25+7.74 EUR
Mindestbestellmenge: 6
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IR2213SPBF INFINEON TECHNOLOGIES ir2213.pdf?fileId=5546d462533600a4015355c9621716d8 IR2213SPBF MOSFET/IGBT drivers
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IR2214SSPBF INFINEON TECHNOLOGIES Infineon-IR2x14SS-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a5a8fa04a9b IR2214SSPBF MOSFET/IGBT drivers
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.44 EUR
12+6.25 EUR
13+5.91 EUR
550+5.71 EUR
Mindestbestellmenge: 10
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IR2233JPBF IR2233JPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Supply voltage: 10...20V DC
Turn-on time: 750ns
Turn-off time: 700ns
Output current: -420...200mA
Type of integrated circuit: driver
Number of channels: 6
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 1.2kV
Mounting: SMD
Operating temperature: -40...125°C
Case: PLCC44
Power: 2W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.67 EUR
7+10.31 EUR
8+9.75 EUR
Mindestbestellmenge: 5
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IR2233PBF IR2233PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29 description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP28-W
Output current: -420...200mA
Power: 1.5W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
Anzahl je Verpackung: 1 Stücke
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IR2233SPBF IR2233SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Operating temperature: -40...125°C
Supply voltage: 10...20V DC
Turn-on time: 750ns
Turn-off time: 700ns
Output current: -420...200mA
Type of integrated circuit: driver
Number of channels: 6
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 1.2kV
Mounting: SMD
Case: SO28-W
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
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IR2301PBF INFINEON TECHNOLOGIES IRSDS09266-1.pdf?t.download=true&u=5oefqw ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc IR2301PBF MOSFET/IGBT drivers
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IR2301SPBF IR2301SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A8A1225C6A08FE27&compId=IR2301-DTE.pdf?ci_sign=c01e57684be53c86afb6cbf1626263184500b01c Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 220ns
Integrated circuit features: charge pump; integrated bootstrap functionality
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 5...20V DC
Output current: -0.35...0.2A
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 169 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.82 EUR
44+1.64 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 40
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IR2302SPBF IR2302SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC26C57EF875EA&compId=IR2302SPBF.pdf?ci_sign=54d75faffa7f118a9bddf8a8184ab731f8d9a7e1 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.15 EUR
13+5.51 EUR
Mindestbestellmenge: 10
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IR2302STRPBF IR2302STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC26C57EF875EA&compId=IR2302SPBF.pdf?ci_sign=54d75faffa7f118a9bddf8a8184ab731f8d9a7e1 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 750ns
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 5...20V DC
Output current: -0.35...0.2A
Power: 625mW
Anzahl je Verpackung: 2500 Stücke
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IR2304SPBF IR2304SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA49DF8BDAB53D7&compId=ir2304.pdf?ci_sign=7f72118dd22d9864326e5acc4031a73c65be54a0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -130...60mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 0.22µs
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
29+2.46 EUR
32+2.23 EUR
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IR2308SPBF IR2308SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA4CBED651ED3D7&compId=ir2308.pdf?ci_sign=88067d29a6d1af22ccd027f1b1c11127c536abc6 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 220ns
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V DC
Output current: -0.35...0.2A
Power: 625mW
Anzahl je Verpackung: 1 Stücke
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IR38163MTRPBFAUMA1 INFINEON TECHNOLOGIES Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c IR38163MTRPBF Voltage regulators - DC/DC circuits
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IR38165MTRPBFAUMA1 INFINEON TECHNOLOGIES Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c IR38165MTRPBF Voltage regulators - DC/DC circuits
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IR38263MTRPBFAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE8959CE379BD04F3D5&compId=IR38263M.pdf?ci_sign=f4a4112111a3d25c5f97e732653620611218005c Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Operating temperature: -40...125°C
Case: PQFN5X7
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: PMBus; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of package: reel; tape
Kind of integrated circuit: POL converter
Topology: buck
Mounting: SMD
Anzahl je Verpackung: 4000 Stücke
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IR38265MTRPBFAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE8959CE622808BB3D5&compId=IR38265M.pdf?ci_sign=1dbb08e49f01815b39ec04109f1da92968a5f623 Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Operating temperature: -40...125°C
Case: PQFN5X7
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: I2C; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: POL converter
Mounting: SMD
Anzahl je Verpackung: 4000 Stücke
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IR38363MTRPBFAUMA1 INFINEON TECHNOLOGIES Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c IR38363MTRPBF Voltage regulators - DC/DC circuits
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IR38365MTRPBFAUMA1 INFINEON TECHNOLOGIES Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c IR38365MTRPBF Voltage regulators - DC/DC circuits
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IR4311MTRPBF IR4311MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC33777F7675EA&compId=IR4311MTRPBF.pdf?ci_sign=5a483b99b10824afc59ab00c4bd5168595648f79 Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; Ch: 1; Amp.class: D; PQFN5X6
Type of integrated circuit: audio amplifier
Case: PQFN5X6
Mounting: SMD
Amplifier class: D
Number of channels: 1
Output power: 35W
Anzahl je Verpackung: 4000 Stücke
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IR4312MTRPBF IR4312MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC35B0725435EA&compId=IR4312MTRPBF.pdf?ci_sign=4da8d2b0f175fe9c3d571fc5f1b21876e749c2d2 Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; Ch: 2; Amp.class: D; PQFN7X7
Type of integrated circuit: audio amplifier
Case: PQFN7X7
Mounting: SMD
Amplifier class: D
Number of channels: 2
Output power: 35W
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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IR4427PBF IR4427PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD978B3DAEA15EA&compId=IR4427PBF.pdf?ci_sign=8e23c3bb3101481f9a2340888126ceaba824bf91 description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -1.5...1.5A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 65ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.39 EUR
37+1.96 EUR
38+1.89 EUR
500+1.83 EUR
1000+1.8 EUR
Mindestbestellmenge: 22
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IR4427STRPBF IR4427STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD978B3DAEA15EA&compId=IR4427PBF.pdf?ci_sign=8e23c3bb3101481f9a2340888126ceaba824bf91 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -1.5...1.5A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 85ns
Turn-off time: 65ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2574 Stücke:
Lieferzeit 7-14 Tag (e)
34+2.14 EUR
38+1.93 EUR
49+1.47 EUR
52+1.4 EUR
2500+1.37 EUR
Mindestbestellmenge: 34
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IRF100B201 IRF100B201 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CFB8F0CDC860D5&compId=IRF100x201.pdf?ci_sign=06ba51b9318616c3f07bc1af27d7d1e387b87aee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Kind of package: tube
Case: TO220AB
Drain-source voltage: 100V
Drain current: 136A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 255nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 690A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.18 EUR
32+2.29 EUR
34+2.16 EUR
2000+2.09 EUR
Mindestbestellmenge: 18
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IRF100B202 IRF100B202 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBD7E4834504143&compId=IRF100B202.pdf?ci_sign=dc0c1d246a2fcd1cfdff23f0c329ab2539115b09 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB
Kind of package: tube
Case: TO220AB
Drain-source voltage: 100V
Drain current: 68A
On-state resistance: 8.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 221W
Polarisation: unipolar
Gate charge: 77nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.76 EUR
41+1.74 EUR
2000+1.06 EUR
Mindestbestellmenge: 15
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IRF100S201 INFINEON TECHNOLOGIES irf100s201.pdf?fileId=5546d462533600a4015355da574c1880 IRF100S201 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1010EPBF IRF1010EPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A41F1A6F5005056AB5A8F&compId=irf1010e.pdf?ci_sign=4e33b918874e4f5bb5c633f1a31b0fc4da8e2c04 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 81A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.6nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRF1010ESTRLPBF IRF1010ESTRLPBF INFINEON TECHNOLOGIES Infineon-IRF1010ES-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee35a00063b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 59A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 330A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 331 Stücke:
Lieferzeit 7-14 Tag (e)
31+2.33 EUR
45+1.62 EUR
79+0.92 EUR
82+0.87 EUR
3200+0.84 EUR
Mindestbestellmenge: 31
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IRF1010EZPBF IRF1010EZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A4FF1A6F5005056AB5A8F&compId=irf1010ez.pdf?ci_sign=ed8bcac49cadd537057bdfcef3363db1c4c84ff7 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRF1010NPBF IRF1010NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A56F1A6F5005056AB5A8F&compId=irf1010n.pdf?ci_sign=2a254e785e882b9531549c4036747a933dac8b99 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 109 Stücke:
Lieferzeit 7-14 Tag (e)
43+1.69 EUR
50+1.44 EUR
74+0.97 EUR
79+0.92 EUR
1000+0.9 EUR
Mindestbestellmenge: 43
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IRF1010NSTRLPBF IRF1010NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5D0C960DA8F1A303005056AB0C4F&compId=irf1010nspbf.pdf?ci_sign=0a22a84cce4fe094cee35a09a9cba0abc4efcb3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRF1018EPBF INFINEON TECHNOLOGIES irf1018epbf.pdf?fileId=5546d462533600a4015355da854e1891 description IRF1018EPBF THT N channel transistors
auf Bestellung 1749 Stücke:
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66+1.1 EUR
125+0.58 EUR
132+0.54 EUR
Mindestbestellmenge: 66
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IRF1018ESTRLPBF INFINEON TECHNOLOGIES irf1018epbf.pdf?fileId=5546d462533600a4015355da854e1891 IRF1018ESTRLPBF SMD N channel transistors
auf Bestellung 694 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.89 EUR
85+0.85 EUR
90+0.8 EUR
Mindestbestellmenge: 38
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IRF1104PBF IRF1104PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A87F1A6F5005056AB5A8F&compId=irf1104.pdf?ci_sign=a8b80656af041888259f2e24ae234f5b866c90ce Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
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27+2.67 EUR
36+2.02 EUR
43+1.66 EUR
Mindestbestellmenge: 27
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IRF1310NPBF IRF1310NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A8EF1A6F5005056AB5A8F&compId=irf1310n.pdf?ci_sign=f86653c14d07ebcb26335896999b26309cf65da1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 73.3nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)
29+2.52 EUR
41+1.77 EUR
83+0.87 EUR
88+0.82 EUR
150+0.8 EUR
200+0.79 EUR
Mindestbestellmenge: 29
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IRF1310NSTRLPBF INFINEON TECHNOLOGIES irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRF1324PBF IRF1324PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57AA3F1A6F5005056AB5A8F&compId=irf1324pbf.pdf?ci_sign=acd484969284c33c68b4f85f5b08d355fbc80d72 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 353A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 353A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 53 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.68 EUR
35+2.1 EUR
36+1.99 EUR
50+1.97 EUR
100+1.92 EUR
Mindestbestellmenge: 20
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IRF135B203 INFINEON TECHNOLOGIES irf135s203.pdf?fileId=5546d462533600a4015364c38ddf29b1 IRF135B203 THT N channel transistors
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.68 EUR
37+1.97 EUR
39+1.87 EUR
Mindestbestellmenge: 20
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IRF135S203 INFINEON TECHNOLOGIES irf135s203.pdf?fileId=5546d462533600a4015364c38ddf29b1 IRF135S203 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1404LPBF IRF1404LPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5D706F12A3F1A303005056AB0C4F&compId=irf1404spbf.pdf?ci_sign=822649cace8b7ad469987a278e29f4fbc5d9766a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.23 EUR
23+3.19 EUR
48+1.52 EUR
50+1.43 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRF1404PBF IRF1404PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB4DF1A6F5005056AB5A8F&compId=irf1404.pdf?ci_sign=a3df55e5569a69bf9a0411dd9ac82882ba42fe4a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 160nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRF1404STRLPBF IRF1404STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5D706F12A3F1A303005056AB0C4F&compId=irf1404spbf.pdf?ci_sign=822649cace8b7ad469987a278e29f4fbc5d9766a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 368 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.26 EUR
31+2.32 EUR
63+1.14 EUR
67+1.07 EUR
1600+1.04 EUR
Mindestbestellmenge: 22
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IRF1404STRRPBF IRF1404STRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5D706F12A3F1A303005056AB0C4F&compId=irf1404spbf.pdf?ci_sign=822649cace8b7ad469987a278e29f4fbc5d9766a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
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IRF1404ZPBF IRF1404ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB5BF1A6F5005056AB5A8F&compId=irf1404z.pdf?ci_sign=4226edaf5a01736c5ac4c822ea7296c120edc159 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.1µC
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.51 EUR
19+3.76 EUR
52+1.37 EUR
5000+0.82 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IRF1404ZSTRLPBF IRF1404ZSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC4D8211D555EA&compId=IRF1404ZSTRLPBF.pdf?ci_sign=87b6930e722dc8bcc784995c7e3ad291b39b8665 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 735 Stücke:
Lieferzeit 7-14 Tag (e)
28+2.62 EUR
38+1.92 EUR
53+1.37 EUR
55+1.3 EUR
250+1.26 EUR
Mindestbestellmenge: 28
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IRF1405PBF IRF1405PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB69F1A6F5005056AB5A8F&compId=irf1405.pdf?ci_sign=de55851dabce3431b508ff257378e49731e4e7e9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 133A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 133A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 170nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 316 Stücke:
Lieferzeit 7-14 Tag (e)
24+3.06 EUR
46+1.56 EUR
63+1.14 EUR
67+1.07 EUR
Mindestbestellmenge: 24
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IRF1405STRLPBF IRF1405STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5DCEDEDF06F1A303005056AB0C4F&compId=irf1405spbf.pdf?ci_sign=8ffb81f923f936adf8e3205c35e37a3d5a64cf83 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 131A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 131A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
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IRF1405ZPBF IRF1405ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5DE6DA3AF1F1A303005056AB0C4F&compId=irf1405zpbf.pdf?ci_sign=e3a2c165305a26dfb16ddc05272a36952c1eb65f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 150A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 150A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 178 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.85 EUR
60+1.2 EUR
64+1.13 EUR
Mindestbestellmenge: 26
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IRF1407PBF IRF1407PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDBABB04EA951DD00C7&compId=irf1407pbf.pdf?ci_sign=d745832aa8dbbd733b93dbfdb32259059f0f1a39 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 160nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 123 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.42 EUR
28+2.59 EUR
53+1.36 EUR
56+1.29 EUR
Mindestbestellmenge: 21
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IRF1407STRLPBF INFINEON TECHNOLOGIES irf1407spbf.pdf?fileId=5546d462533600a4015355db309b18ca Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; Idm: 520A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 520A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
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IRF200B211 INFINEON TECHNOLOGIES irf200b211.pdf?fileId=5546d462533600a4015355db4d5418d4 IRF200B211 THT N channel transistors
Produkt ist nicht verfügbar
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IRF200P222 IRF200P222 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5AA0FD11CAA18&compId=IRF200P222.pdf?ci_sign=d9afdb99cae98fec1b59ed6668faa1e90e91f9fe Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 129A; 556W
Drain-source voltage: 200V
Drain current: 129A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 556W
Polarisation: unipolar
Kind of package: tube
Gate charge: 203nC
Technology: StrongIRFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247AC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.55 EUR
9+8.04 EUR
50+7.74 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRF200P223 IRF200P223 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5C60D032C6A18&compId=IRF200P223.pdf?ci_sign=e6665466486189b4a31e5651bceddce5d8357e7a Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 71A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 71A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 102nC
Technology: StrongIRFET™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.16 EUR
14+5.38 EUR
15+5.09 EUR
50+4.9 EUR
Mindestbestellmenge: 10
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IRF2204PBF IRF2204PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5F1455BF3EF1A303005056AB0C4F&compId=irf2204pbf.pdf?ci_sign=9507b4eec742854faae9ef3d2df5d9f06c7206bc description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 330W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 97 Stücke:
Lieferzeit 7-14 Tag (e)
28+2.59 EUR
44+1.63 EUR
47+1.54 EUR
1000+1.49 EUR
Mindestbestellmenge: 28
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IR2183SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA37A807C1553D7&compId=IR2183SPBF.pdf?ci_sign=1842ad47fa85b992a3d7b9b7c6d4ee278eb4f9ff
IR2183SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 73 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+5.05 EUR
21+3.55 EUR
22+3.35 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IR21844PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR21844PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2.3...1.9A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+71.5 EUR
3+23.84 EUR
4+17.88 EUR
11+6.51 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IR21844SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR21844SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.7 EUR
31+2.37 EUR
32+2.25 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IR21844STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR21844STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2184PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR2184PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 73 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.59 EUR
32+2.27 EUR
34+2.14 EUR
500+2.12 EUR
1000+2.06 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IR2184SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR2184SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
19+3.96 EUR
20+3.58 EUR
27+2.75 EUR
28+2.59 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IR2184STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR2184STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2487 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+4.2 EUR
19+3.93 EUR
34+2.12 EUR
36+1.99 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IR2213PBF ir2213.pdf?fileId=5546d462533600a4015355c9621716d8
Hersteller: INFINEON TECHNOLOGIES
IR2213PBF MOSFET/IGBT drivers
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+11.91 EUR
7+10.21 EUR
25+7.74 EUR
Mindestbestellmenge: 6
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IR2213SPBF ir2213.pdf?fileId=5546d462533600a4015355c9621716d8
Hersteller: INFINEON TECHNOLOGIES
IR2213SPBF MOSFET/IGBT drivers
Produkt ist nicht verfügbar
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IR2214SSPBF Infineon-IR2x14SS-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a5a8fa04a9b
Hersteller: INFINEON TECHNOLOGIES
IR2214SSPBF MOSFET/IGBT drivers
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.44 EUR
12+6.25 EUR
13+5.91 EUR
550+5.71 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IR2233JPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29
IR2233JPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Supply voltage: 10...20V DC
Turn-on time: 750ns
Turn-off time: 700ns
Output current: -420...200mA
Type of integrated circuit: driver
Number of channels: 6
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 1.2kV
Mounting: SMD
Operating temperature: -40...125°C
Case: PLCC44
Power: 2W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+14.67 EUR
7+10.31 EUR
8+9.75 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IR2233PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29
IR2233PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP28-W
Output current: -420...200mA
Power: 1.5W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2233SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29
IR2233SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Operating temperature: -40...125°C
Supply voltage: 10...20V DC
Turn-on time: 750ns
Turn-off time: 700ns
Output current: -420...200mA
Type of integrated circuit: driver
Number of channels: 6
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 1.2kV
Mounting: SMD
Case: SO28-W
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IR2301PBF IRSDS09266-1.pdf?t.download=true&u=5oefqw ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc
Hersteller: INFINEON TECHNOLOGIES
IR2301PBF MOSFET/IGBT drivers
Produkt ist nicht verfügbar
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IR2301SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A8A1225C6A08FE27&compId=IR2301-DTE.pdf?ci_sign=c01e57684be53c86afb6cbf1626263184500b01c
IR2301SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 220ns
Integrated circuit features: charge pump; integrated bootstrap functionality
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 5...20V DC
Output current: -0.35...0.2A
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 169 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
40+1.82 EUR
44+1.64 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IR2302SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC26C57EF875EA&compId=IR2302SPBF.pdf?ci_sign=54d75faffa7f118a9bddf8a8184ab731f8d9a7e1
IR2302SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.15 EUR
13+5.51 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IR2302STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC26C57EF875EA&compId=IR2302SPBF.pdf?ci_sign=54d75faffa7f118a9bddf8a8184ab731f8d9a7e1
IR2302STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 750ns
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 5...20V DC
Output current: -0.35...0.2A
Power: 625mW
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2304SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA49DF8BDAB53D7&compId=ir2304.pdf?ci_sign=7f72118dd22d9864326e5acc4031a73c65be54a0
IR2304SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -130...60mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 0.22µs
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
29+2.46 EUR
32+2.23 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IR2308SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA4CBED651ED3D7&compId=ir2308.pdf?ci_sign=88067d29a6d1af22ccd027f1b1c11127c536abc6
IR2308SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 220ns
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V DC
Output current: -0.35...0.2A
Power: 625mW
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR38163MTRPBFAUMA1 Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c
Hersteller: INFINEON TECHNOLOGIES
IR38163MTRPBF Voltage regulators - DC/DC circuits
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR38165MTRPBFAUMA1 Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c
Hersteller: INFINEON TECHNOLOGIES
IR38165MTRPBF Voltage regulators - DC/DC circuits
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR38263MTRPBFAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE8959CE379BD04F3D5&compId=IR38263M.pdf?ci_sign=f4a4112111a3d25c5f97e732653620611218005c
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Operating temperature: -40...125°C
Case: PQFN5X7
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: PMBus; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of package: reel; tape
Kind of integrated circuit: POL converter
Topology: buck
Mounting: SMD
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR38265MTRPBFAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE8959CE622808BB3D5&compId=IR38265M.pdf?ci_sign=1dbb08e49f01815b39ec04109f1da92968a5f623
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Operating temperature: -40...125°C
Case: PQFN5X7
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: I2C; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: POL converter
Mounting: SMD
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR38363MTRPBFAUMA1 Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c
Hersteller: INFINEON TECHNOLOGIES
IR38363MTRPBF Voltage regulators - DC/DC circuits
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR38365MTRPBFAUMA1 Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c
Hersteller: INFINEON TECHNOLOGIES
IR38365MTRPBF Voltage regulators - DC/DC circuits
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR4311MTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC33777F7675EA&compId=IR4311MTRPBF.pdf?ci_sign=5a483b99b10824afc59ab00c4bd5168595648f79
IR4311MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; Ch: 1; Amp.class: D; PQFN5X6
Type of integrated circuit: audio amplifier
Case: PQFN5X6
Mounting: SMD
Amplifier class: D
Number of channels: 1
Output power: 35W
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR4312MTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC35B0725435EA&compId=IR4312MTRPBF.pdf?ci_sign=4da8d2b0f175fe9c3d571fc5f1b21876e749c2d2
IR4312MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; Ch: 2; Amp.class: D; PQFN7X7
Type of integrated circuit: audio amplifier
Case: PQFN7X7
Mounting: SMD
Amplifier class: D
Number of channels: 2
Output power: 35W
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR4427PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD978B3DAEA15EA&compId=IR4427PBF.pdf?ci_sign=8e23c3bb3101481f9a2340888126ceaba824bf91
IR4427PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -1.5...1.5A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 65ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
22+3.39 EUR
37+1.96 EUR
38+1.89 EUR
500+1.83 EUR
1000+1.8 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IR4427STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD978B3DAEA15EA&compId=IR4427PBF.pdf?ci_sign=8e23c3bb3101481f9a2340888126ceaba824bf91
IR4427STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -1.5...1.5A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 85ns
Turn-off time: 65ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2574 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
34+2.14 EUR
38+1.93 EUR
49+1.47 EUR
52+1.4 EUR
2500+1.37 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
IRF100B201 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CFB8F0CDC860D5&compId=IRF100x201.pdf?ci_sign=06ba51b9318616c3f07bc1af27d7d1e387b87aee
IRF100B201
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Kind of package: tube
Case: TO220AB
Drain-source voltage: 100V
Drain current: 136A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 255nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 690A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+4.18 EUR
32+2.29 EUR
34+2.16 EUR
2000+2.09 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IRF100B202 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBD7E4834504143&compId=IRF100B202.pdf?ci_sign=dc0c1d246a2fcd1cfdff23f0c329ab2539115b09
IRF100B202
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB
Kind of package: tube
Case: TO220AB
Drain-source voltage: 100V
Drain current: 68A
On-state resistance: 8.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 221W
Polarisation: unipolar
Gate charge: 77nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+4.76 EUR
41+1.74 EUR
2000+1.06 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IRF100S201 irf100s201.pdf?fileId=5546d462533600a4015355da574c1880
Hersteller: INFINEON TECHNOLOGIES
IRF100S201 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1010EPBF description pVersion=0046&contRep=ZT&docId=E1C04E34F57A41F1A6F5005056AB5A8F&compId=irf1010e.pdf?ci_sign=4e33b918874e4f5bb5c633f1a31b0fc4da8e2c04
IRF1010EPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 81A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.6nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1010ESTRLPBF Infineon-IRF1010ES-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee35a00063b
IRF1010ESTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 59A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 330A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 331 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
31+2.33 EUR
45+1.62 EUR
79+0.92 EUR
82+0.87 EUR
3200+0.84 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
IRF1010EZPBF description pVersion=0046&contRep=ZT&docId=E1C04E34F57A4FF1A6F5005056AB5A8F&compId=irf1010ez.pdf?ci_sign=ed8bcac49cadd537057bdfcef3363db1c4c84ff7
IRF1010EZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1010NPBF description pVersion=0046&contRep=ZT&docId=E1C04E34F57A56F1A6F5005056AB5A8F&compId=irf1010n.pdf?ci_sign=2a254e785e882b9531549c4036747a933dac8b99
IRF1010NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 109 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
43+1.69 EUR
50+1.44 EUR
74+0.97 EUR
79+0.92 EUR
1000+0.9 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
IRF1010NSTRLPBF pVersion=0046&contRep=ZT&docId=E21F5D0C960DA8F1A303005056AB0C4F&compId=irf1010nspbf.pdf?ci_sign=0a22a84cce4fe094cee35a09a9cba0abc4efcb3a
IRF1010NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1018EPBF description irf1018epbf.pdf?fileId=5546d462533600a4015355da854e1891
Hersteller: INFINEON TECHNOLOGIES
IRF1018EPBF THT N channel transistors
auf Bestellung 1749 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
66+1.1 EUR
125+0.58 EUR
132+0.54 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
IRF1018ESTRLPBF irf1018epbf.pdf?fileId=5546d462533600a4015355da854e1891
Hersteller: INFINEON TECHNOLOGIES
IRF1018ESTRLPBF SMD N channel transistors
auf Bestellung 694 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
38+1.89 EUR
85+0.85 EUR
90+0.8 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
IRF1104PBF pVersion=0046&contRep=ZT&docId=E1C04E34F57A87F1A6F5005056AB5A8F&compId=irf1104.pdf?ci_sign=a8b80656af041888259f2e24ae234f5b866c90ce
IRF1104PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
27+2.67 EUR
36+2.02 EUR
43+1.66 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IRF1310NPBF pVersion=0046&contRep=ZT&docId=E1C04E34F57A8EF1A6F5005056AB5A8F&compId=irf1310n.pdf?ci_sign=f86653c14d07ebcb26335896999b26309cf65da1
IRF1310NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 73.3nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
29+2.52 EUR
41+1.77 EUR
83+0.87 EUR
88+0.82 EUR
150+0.8 EUR
200+0.79 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IRF1310NSTRLPBF irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1324PBF pVersion=0046&contRep=ZT&docId=E1C04E34F57AA3F1A6F5005056AB5A8F&compId=irf1324pbf.pdf?ci_sign=acd484969284c33c68b4f85f5b08d355fbc80d72
IRF1324PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 353A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 353A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 53 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.68 EUR
35+2.1 EUR
36+1.99 EUR
50+1.97 EUR
100+1.92 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRF135B203 irf135s203.pdf?fileId=5546d462533600a4015364c38ddf29b1
Hersteller: INFINEON TECHNOLOGIES
IRF135B203 THT N channel transistors
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.68 EUR
37+1.97 EUR
39+1.87 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRF135S203 irf135s203.pdf?fileId=5546d462533600a4015364c38ddf29b1
Hersteller: INFINEON TECHNOLOGIES
IRF135S203 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1404LPBF pVersion=0046&contRep=ZT&docId=E21F5D706F12A3F1A303005056AB0C4F&compId=irf1404spbf.pdf?ci_sign=822649cace8b7ad469987a278e29f4fbc5d9766a
IRF1404LPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
17+4.23 EUR
23+3.19 EUR
48+1.52 EUR
50+1.43 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRF1404PBF pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB4DF1A6F5005056AB5A8F&compId=irf1404.pdf?ci_sign=a3df55e5569a69bf9a0411dd9ac82882ba42fe4a
IRF1404PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 160nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1404STRLPBF pVersion=0046&contRep=ZT&docId=E21F5D706F12A3F1A303005056AB0C4F&compId=irf1404spbf.pdf?ci_sign=822649cace8b7ad469987a278e29f4fbc5d9766a
IRF1404STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 368 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
22+3.26 EUR
31+2.32 EUR
63+1.14 EUR
67+1.07 EUR
1600+1.04 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IRF1404STRRPBF pVersion=0046&contRep=ZT&docId=E21F5D706F12A3F1A303005056AB0C4F&compId=irf1404spbf.pdf?ci_sign=822649cace8b7ad469987a278e29f4fbc5d9766a
IRF1404STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1404ZPBF pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB5BF1A6F5005056AB5A8F&compId=irf1404z.pdf?ci_sign=4226edaf5a01736c5ac4c822ea7296c120edc159
IRF1404ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.1µC
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.51 EUR
19+3.76 EUR
52+1.37 EUR
5000+0.82 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IRF1404ZSTRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC4D8211D555EA&compId=IRF1404ZSTRLPBF.pdf?ci_sign=87b6930e722dc8bcc784995c7e3ad291b39b8665
IRF1404ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 735 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
28+2.62 EUR
38+1.92 EUR
53+1.37 EUR
55+1.3 EUR
250+1.26 EUR
Mindestbestellmenge: 28
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IRF1405PBF pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB69F1A6F5005056AB5A8F&compId=irf1405.pdf?ci_sign=de55851dabce3431b508ff257378e49731e4e7e9
IRF1405PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 133A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 133A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 170nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 316 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
24+3.06 EUR
46+1.56 EUR
63+1.14 EUR
67+1.07 EUR
Mindestbestellmenge: 24
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IRF1405STRLPBF pVersion=0046&contRep=ZT&docId=E21F5DCEDEDF06F1A303005056AB0C4F&compId=irf1405spbf.pdf?ci_sign=8ffb81f923f936adf8e3205c35e37a3d5a64cf83
IRF1405STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 131A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 131A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1405ZPBF pVersion=0046&contRep=ZT&docId=E21F5DE6DA3AF1F1A303005056AB0C4F&compId=irf1405zpbf.pdf?ci_sign=e3a2c165305a26dfb16ddc05272a36952c1eb65f
IRF1405ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 150A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 150A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 178 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
26+2.85 EUR
60+1.2 EUR
64+1.13 EUR
Mindestbestellmenge: 26
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IRF1407PBF description pVersion=0046&contRep=ZT&docId=005056AB90B41EDBABB04EA951DD00C7&compId=irf1407pbf.pdf?ci_sign=d745832aa8dbbd733b93dbfdb32259059f0f1a39
IRF1407PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 160nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 123 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.42 EUR
28+2.59 EUR
53+1.36 EUR
56+1.29 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IRF1407STRLPBF irf1407spbf.pdf?fileId=5546d462533600a4015355db309b18ca
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; Idm: 520A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 520A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF200B211 irf200b211.pdf?fileId=5546d462533600a4015355db4d5418d4
Hersteller: INFINEON TECHNOLOGIES
IRF200B211 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF200P222 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5AA0FD11CAA18&compId=IRF200P222.pdf?ci_sign=d9afdb99cae98fec1b59ed6668faa1e90e91f9fe
IRF200P222
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 129A; 556W
Drain-source voltage: 200V
Drain current: 129A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 556W
Polarisation: unipolar
Kind of package: tube
Gate charge: 203nC
Technology: StrongIRFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247AC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+11.55 EUR
9+8.04 EUR
50+7.74 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRF200P223 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5C60D032C6A18&compId=IRF200P223.pdf?ci_sign=e6665466486189b4a31e5651bceddce5d8357e7a
IRF200P223
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 71A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 71A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 102nC
Technology: StrongIRFET™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.16 EUR
14+5.38 EUR
15+5.09 EUR
50+4.9 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRF2204PBF description pVersion=0046&contRep=ZT&docId=E21F5F1455BF3EF1A303005056AB0C4F&compId=irf2204pbf.pdf?ci_sign=9507b4eec742854faae9ef3d2df5d9f06c7206bc
IRF2204PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 330W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 97 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
28+2.59 EUR
44+1.63 EUR
47+1.54 EUR
1000+1.49 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
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