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IR2132JPBF IR2132JPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD88A67FAC295EA&compId=IR2132JPBF.pdf?ci_sign=0a80f7199067b13ee36070118f53aa88569ddda4 description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Case: PLCC44
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 475ns
Turn-on time: 675ns
Number of channels: 6
Power: 2W
Supply voltage: 10...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.74 EUR
12+6.09 EUR
13+5.76 EUR
27+5.69 EUR
1134+5.55 EUR
Mindestbestellmenge: 11
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IR2132SPBF IR2132SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD88A67FAC295EA&compId=IR2132JPBF.pdf?ci_sign=0a80f7199067b13ee36070118f53aa88569ddda4 description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.78 EUR
12+6.03 EUR
25+5.91 EUR
Mindestbestellmenge: 10
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IR2132STRPBF INFINEON TECHNOLOGIES ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IR2133SPBF IR2133SPBF INFINEON TECHNOLOGIES IRSDS12168-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 0.6/1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IR2135JPBF IR2135JPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Case: PLCC44
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 700ns
Turn-on time: 750ns
Number of channels: 6
Power: 2W
Supply voltage: 10...20V DC
Voltage class: 0.6/1.2kV
Type of integrated circuit: driver
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.22 EUR
7+10.72 EUR
Mindestbestellmenge: 5
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IR2136SPBF IR2136SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC212A803B55EA&compId=IR2136STRPBF.pdf?ci_sign=eda5310d7e0d7b6075a828f4bc7bb92bc93e0c97 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IR2136STRPBF IR2136STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC212A803B55EA&compId=IR2136STRPBF.pdf?ci_sign=eda5310d7e0d7b6075a828f4bc7bb92bc93e0c97 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
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IR21531PBF IR21531PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD346DF1A6F5005056AB5A8F&compId=ir21531.pdf?ci_sign=fbfd3f2c3acd812dd314bfbf7c9d05a0c977128f description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Power: 1W
Turn-off time: 40ns
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: THT
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 10...15.6V DC
Turn-on time: 80ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 600 Stücke:
Lieferzeit 7-14 Tag (e)
28+2.65 EUR
31+2.37 EUR
32+2.27 EUR
35+2.1 EUR
50+2.06 EUR
Mindestbestellmenge: 28
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IR21531SPBF INFINEON TECHNOLOGIES ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3 description IR21531SPBF MOSFET/IGBT drivers
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IR2153DPBF INFINEON TECHNOLOGIES IR2153_D_S_PbF_5-21-20.pdf description IR2153DPBF MOSFET/IGBT drivers
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.43 EUR
37+1.93 EUR
500+1.92 EUR
Mindestbestellmenge: 21
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IR2153PBF IR2153PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3474F1A6F5005056AB5A8F&compId=ir2153.pdf?ci_sign=4af5f815948fd1ff289fb81e6867b860118ddf46 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Power: 1W
Mounting: THT
Operating temperature: -40...125°C
Turn-off time: 40ns
Turn-on time: 80ns
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Voltage class: 600V
Case: DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IR2153SPBF IR2153SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3474F1A6F5005056AB5A8F&compId=ir2153.pdf?ci_sign=4af5f815948fd1ff289fb81e6867b860118ddf46 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Number of channels: 2
Supply voltage: 10...15.6V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 40ns
Turn-on time: 80ns
Power: 625mW
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Anzahl je Verpackung: 1 Stücke
auf Bestellung 251 Stücke:
Lieferzeit 7-14 Tag (e)
37+1.97 EUR
42+1.72 EUR
46+1.56 EUR
50+1.43 EUR
Mindestbestellmenge: 37
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IR2153STRPBF IR2153STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8A926E51A75EA&compId=IR2153DPBF.pdf?ci_sign=467d7c213ad01b739971cced2176d04c6b7f1be5 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Mounting: SMD
Operating temperature: -40...125°C
Turn-off time: 40ns
Turn-on time: 80ns
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Voltage class: 600V
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: reel; tape
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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IR2166PBF INFINEON TECHNOLOGIES ir2166.pdf?fileId=5546d462533600a4015355c9049416c0 IR2166PBF MOSFET/IGBT drivers
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IR2166STRPBF INFINEON TECHNOLOGIES ir2166.pdf?fileId=5546d462533600a4015355c9049416c0 IR2166STRPBF MOSFET/IGBT drivers
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IR2175STRPBF INFINEON TECHNOLOGIES IRSDS17958-1.pdf?t.download=true&u=5oefqw IR2175STRPBF MOSFET/IGBT drivers
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IR2181SPBF IR2181SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD34A5F1A6F5005056AB5A8F&compId=ir2181.pdf?ci_sign=c5a6339eac545a9ba06e6dda4e6c0792928b2542 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Protection: undervoltage UVP
Voltage class: 600V
Turn-off time: 0.22µs
Turn-on time: 180ns
Power: 625mW
Integrated circuit features: charge pump; integrated bootstrap functionality
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
9+7.95 EUR
14+5.11 EUR
Mindestbestellmenge: 9
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IR21834SPBF IR21834SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA37A807C1553D7&compId=IR2183SPBF.pdf?ci_sign=1842ad47fa85b992a3d7b9b7c6d4ee278eb4f9ff Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 0.22µs
Turn-on time: 180ns
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
9+7.95 EUR
12+5.96 EUR
Mindestbestellmenge: 9
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IR2183SPBF IR2183SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA37A807C1553D7&compId=IR2183SPBF.pdf?ci_sign=1842ad47fa85b992a3d7b9b7c6d4ee278eb4f9ff Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 2
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V DC
Turn-on time: 180ns
Turn-off time: 0.22µs
Power: 625mW
Topology: MOSFET half-bridge
Kind of package: tube
Voltage class: 600V
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 73 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.88 EUR
21+3.52 EUR
22+3.33 EUR
Mindestbestellmenge: 19
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IR21844PBF IR21844PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2.3...1.9A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
3+23.84 EUR
4+17.88 EUR
11+6.51 EUR
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IR21844SPBF IR21844SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Protection: short circuit protection SCP; undervoltage UVP
Voltage class: 600V
Turn-off time: 270ns
Turn-on time: 680ns
Power: 1W
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.7 EUR
23+3.1 EUR
Mindestbestellmenge: 16
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IR21844STRPBF IR21844STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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IR2184PBF IR2184PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Protection: short circuit protection SCP; undervoltage UVP
Voltage class: 600V
Turn-off time: 270ns
Turn-on time: 680ns
Power: 1W
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Anzahl je Verpackung: 1 Stücke
auf Bestellung 142 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.39 EUR
32+2.27 EUR
34+2.14 EUR
3000+2.07 EUR
Mindestbestellmenge: 22
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IR2184SPBF IR2184SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Protection: short circuit protection SCP; undervoltage UVP
Voltage class: 600V
Turn-off time: 270ns
Turn-on time: 680ns
Power: 625mW
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Anzahl je Verpackung: 1 Stücke
auf Bestellung 230 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.65 EUR
21+3.42 EUR
27+2.73 EUR
28+2.59 EUR
50+2.49 EUR
Mindestbestellmenge: 20
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IR2184STRPBF IR2184STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Protection: short circuit protection SCP; undervoltage UVP
Voltage class: 600V
Turn-off time: 270ns
Turn-on time: 680ns
Power: 625mW
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2473 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.2 EUR
19+3.93 EUR
35+2.1 EUR
36+1.99 EUR
Mindestbestellmenge: 18
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IR2213PBF INFINEON TECHNOLOGIES ir2213.pdf?fileId=5546d462533600a4015355c9621716d8 IR2213PBF MOSFET/IGBT drivers
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
6+11.91 EUR
7+10.21 EUR
25+7.74 EUR
Mindestbestellmenge: 6
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IR2213SPBF INFINEON TECHNOLOGIES ir2213.pdf?fileId=5546d462533600a4015355c9621716d8 IR2213SPBF MOSFET/IGBT drivers
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IR2214SSPBF INFINEON TECHNOLOGIES Infineon-IR2x14SS-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a5a8fa04a9b IR2214SSPBF MOSFET/IGBT drivers
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.44 EUR
12+6.25 EUR
13+5.91 EUR
550+5.71 EUR
Mindestbestellmenge: 10
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IR2233JPBF IR2233JPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Case: PLCC44
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 700ns
Turn-on time: 750ns
Number of channels: 6
Power: 2W
Supply voltage: 10...20V DC
Voltage class: 1.2kV
Type of integrated circuit: driver
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.28 EUR
8+9.62 EUR
Mindestbestellmenge: 7
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IR2233PBF IR2233PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29 description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP28-W
Output current: -420...200mA
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: tube
Voltage class: 1.2kV
Power: 1.5W
Turn-on time: 750ns
Turn-off time: 700ns
Anzahl je Verpackung: 1 Stücke
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IR2233SPBF IR2233SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: tube
Voltage class: 1.2kV
Power: 1.6W
Turn-on time: 750ns
Turn-off time: 700ns
Anzahl je Verpackung: 1 Stücke
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IR2301PBF INFINEON TECHNOLOGIES IRSDS09266-1.pdf?t.download=true&u=5oefqw ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc IR2301PBF MOSFET/IGBT drivers
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IR2301SPBF IR2301SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A8A1225C6A08FE27&compId=IR2301-DTE.pdf?ci_sign=c01e57684be53c86afb6cbf1626263184500b01c Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 220ns
Power: 625mW
Integrated circuit features: charge pump; integrated bootstrap functionality
Anzahl je Verpackung: 1 Stücke
auf Bestellung 159 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.17 EUR
44+1.66 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 33
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IR2302SPBF IR2302SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC26C57EF875EA&compId=IR2302SPBF.pdf?ci_sign=54d75faffa7f118a9bddf8a8184ab731f8d9a7e1 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Voltage class: 600V
Topology: MOSFET half-bridge
Output current: -0.35...0.2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
9+7.95 EUR
12+5.96 EUR
Mindestbestellmenge: 9
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IR2302STRPBF IR2302STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC26C57EF875EA&compId=IR2302SPBF.pdf?ci_sign=54d75faffa7f118a9bddf8a8184ab731f8d9a7e1 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Voltage class: 600V
Topology: MOSFET half-bridge
Output current: -0.35...0.2A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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IR2304SPBF IR2304SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA49DF8BDAB53D7&compId=ir2304.pdf?ci_sign=7f72118dd22d9864326e5acc4031a73c65be54a0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Turn-off time: 0.22µs
Turn-on time: 220ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Topology: MOSFET half-bridge
Output current: -130...60mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
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27+2.65 EUR
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IR2308SPBF IR2308SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA4CBED651ED3D7&compId=ir2308.pdf?ci_sign=88067d29a6d1af22ccd027f1b1c11127c536abc6 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Turn-off time: 200ns
Turn-on time: 220ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Topology: MOSFET half-bridge
Output current: -0.35...0.2A
Anzahl je Verpackung: 1 Stücke
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IR38163MTRPBFAUMA1 INFINEON TECHNOLOGIES Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c IR38163MTRPBF Voltage regulators - DC/DC circuits
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IR38165MTRPBFAUMA1 INFINEON TECHNOLOGIES Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c IR38165MTRPBF Voltage regulators - DC/DC circuits
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IR38263MTRPBFAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE8959CE379BD04F3D5&compId=IR38263M.pdf?ci_sign=f4a4112111a3d25c5f97e732653620611218005c Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Topology: buck
Kind of package: reel; tape
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Case: PQFN5X7
Interface: PMBus; PVID
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
DC supply current: 50mA
Output current: 30A
Output voltage: 0.5...14V DC
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Frequency: 0.15...1.5MHz
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
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IR38265MTRPBFAUMA1 INFINEON TECHNOLOGIES Infineon-IR38265M-DS-v03_02-EN.pdf?fileId=5546d4625b62cd8a015bcf8202606e55 IR38265MTRPBF Voltage regulators - DC/DC circuits
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IR38363MTRPBFAUMA1 INFINEON TECHNOLOGIES Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c IR38363MTRPBF Voltage regulators - DC/DC circuits
Produkt ist nicht verfügbar
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IR38365MTRPBFAUMA1 INFINEON TECHNOLOGIES Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c IR38365MTRPBF Voltage regulators - DC/DC circuits
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IR4311MTRPBF INFINEON TECHNOLOGIES ir4301.pdf?fileId=5546d462533600a4015355d5fc691819 IR4311MTRPBF RTV - audio integrated circuits
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IR4312MTRPBF INFINEON TECHNOLOGIES ir4302.pdf?fileId=5546d462533600a4015355d602a9181d IR4312MTRPBF RTV - audio integrated circuits
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IR4427PBF IR4427PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD978B3DAEA15EA&compId=IR4427PBF.pdf?ci_sign=8e23c3bb3101481f9a2340888126ceaba824bf91 description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -1.5...1.5A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 65ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)
27+2.67 EUR
34+2.1 EUR
50+1.83 EUR
100+1.79 EUR
Mindestbestellmenge: 27
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IR4427STRPBF IR4427STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD978B3DAEA15EA&compId=IR4427PBF.pdf?ci_sign=8e23c3bb3101481f9a2340888126ceaba824bf91 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -1.5...1.5A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 85ns
Turn-off time: 65ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2558 Stücke:
Lieferzeit 7-14 Tag (e)
36+2.02 EUR
48+1.52 EUR
49+1.47 EUR
50+1.44 EUR
52+1.4 EUR
Mindestbestellmenge: 36
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IRF100B201 IRF100B201 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CFB8F0CDC860D5&compId=IRF100x201.pdf?ci_sign=06ba51b9318616c3f07bc1af27d7d1e387b87aee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Kind of package: tube
Case: TO220AB
Drain-source voltage: 100V
Drain current: 136A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 255nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 690A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.18 EUR
32+2.29 EUR
34+2.16 EUR
2000+2.09 EUR
Mindestbestellmenge: 18
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IRF100B202 IRF100B202 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBD7E4834504143&compId=IRF100B202.pdf?ci_sign=dc0c1d246a2fcd1cfdff23f0c329ab2539115b09 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 221W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 195 Stücke:
Lieferzeit 7-14 Tag (e)
32+2.26 EUR
52+1.39 EUR
63+1.14 EUR
67+1.07 EUR
2000+1.04 EUR
Mindestbestellmenge: 32
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IRF100S201 INFINEON TECHNOLOGIES irf100s201.pdf?fileId=5546d462533600a4015355da574c1880 IRF100S201 SMD N channel transistors
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IRF1010EPBF IRF1010EPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A41F1A6F5005056AB5A8F&compId=irf1010e.pdf?ci_sign=4e33b918874e4f5bb5c633f1a31b0fc4da8e2c04 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 81A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.6nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 166 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.22 EUR
64+1.13 EUR
99+0.73 EUR
104+0.69 EUR
500+0.67 EUR
1000+0.66 EUR
Mindestbestellmenge: 59
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IRF1010ESTRLPBF IRF1010ESTRLPBF INFINEON TECHNOLOGIES Infineon-IRF1010ES-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee35a00063b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 59A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 330A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 317 Stücke:
Lieferzeit 7-14 Tag (e)
39+1.86 EUR
46+1.59 EUR
79+0.92 EUR
82+0.87 EUR
Mindestbestellmenge: 39
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IRF1010EZPBF IRF1010EZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A4FF1A6F5005056AB5A8F&compId=irf1010ez.pdf?ci_sign=ed8bcac49cadd537057bdfcef3363db1c4c84ff7 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 153 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.43 EUR
57+1.26 EUR
66+1.09 EUR
114+0.63 EUR
120+0.6 EUR
Mindestbestellmenge: 50
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IRF1010NPBF IRF1010NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A56F1A6F5005056AB5A8F&compId=irf1010n.pdf?ci_sign=2a254e785e882b9531549c4036747a933dac8b99 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO220AB
Type of transistor: N-MOSFET
Case: TO220AB
Drain-source voltage: 55V
Drain current: 72A
On-state resistance: 11mΩ
Power dissipation: 130W
Polarisation: unipolar
Kind of package: tube
Gate charge: 80nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)
43+1.69 EUR
50+1.44 EUR
51+1.4 EUR
1000+0.9 EUR
Mindestbestellmenge: 43
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IRF1010NSTRLPBF IRF1010NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5D0C960DA8F1A303005056AB0C4F&compId=irf1010nspbf.pdf?ci_sign=0a22a84cce4fe094cee35a09a9cba0abc4efcb3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 800 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.43 EUR
59+1.23 EUR
99+0.73 EUR
105+0.69 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRF1018EPBF IRF1018EPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A72F1A6F5005056AB5A8F&compId=irf1018epbf.pdf?ci_sign=9421567cb65140505372d9bbe28ae392c50f1431 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 716 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.77 EUR
60+1.2 EUR
66+1.1 EUR
133+0.54 EUR
141+0.51 EUR
Mindestbestellmenge: 41
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IRF1018ESTRLPBF INFINEON TECHNOLOGIES irf1018epbf.pdf?fileId=5546d462533600a4015355da854e1891 IRF1018ESTRLPBF SMD N channel transistors
auf Bestellung 694 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.89 EUR
85+0.85 EUR
90+0.8 EUR
Mindestbestellmenge: 38
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IRF1104PBF IRF1104PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A87F1A6F5005056AB5A8F&compId=irf1104.pdf?ci_sign=a8b80656af041888259f2e24ae234f5b866c90ce Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)
43+1.66 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
IRF1310NPBF IRF1310NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A8EF1A6F5005056AB5A8F&compId=irf1310n.pdf?ci_sign=f86653c14d07ebcb26335896999b26309cf65da1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 73.3nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 144 Stücke:
Lieferzeit 7-14 Tag (e)
35+2.07 EUR
49+1.47 EUR
84+0.86 EUR
88+0.82 EUR
Mindestbestellmenge: 35
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IRF1310NSTRLPBF INFINEON TECHNOLOGIES irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IR2132JPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD88A67FAC295EA&compId=IR2132JPBF.pdf?ci_sign=0a80f7199067b13ee36070118f53aa88569ddda4
IR2132JPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Case: PLCC44
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 475ns
Turn-on time: 675ns
Number of channels: 6
Power: 2W
Supply voltage: 10...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.74 EUR
12+6.09 EUR
13+5.76 EUR
27+5.69 EUR
1134+5.55 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IR2132SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD88A67FAC295EA&compId=IR2132JPBF.pdf?ci_sign=0a80f7199067b13ee36070118f53aa88569ddda4
IR2132SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.78 EUR
12+6.03 EUR
25+5.91 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IR2132STRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IR2133SPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2133SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 0.6/1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2135JPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29
IR2135JPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Case: PLCC44
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 700ns
Turn-on time: 750ns
Number of channels: 6
Power: 2W
Supply voltage: 10...20V DC
Voltage class: 0.6/1.2kV
Type of integrated circuit: driver
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+15.22 EUR
7+10.72 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IR2136SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC212A803B55EA&compId=IR2136STRPBF.pdf?ci_sign=eda5310d7e0d7b6075a828f4bc7bb92bc93e0c97
IR2136SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2136STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC212A803B55EA&compId=IR2136STRPBF.pdf?ci_sign=eda5310d7e0d7b6075a828f4bc7bb92bc93e0c97
IR2136STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR21531PBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD346DF1A6F5005056AB5A8F&compId=ir21531.pdf?ci_sign=fbfd3f2c3acd812dd314bfbf7c9d05a0c977128f
IR21531PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Power: 1W
Turn-off time: 40ns
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: THT
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 10...15.6V DC
Turn-on time: 80ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 600 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
28+2.65 EUR
31+2.37 EUR
32+2.27 EUR
35+2.1 EUR
50+2.06 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IR21531SPBF description ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3
Hersteller: INFINEON TECHNOLOGIES
IR21531SPBF MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2153DPBF description IR2153_D_S_PbF_5-21-20.pdf
Hersteller: INFINEON TECHNOLOGIES
IR2153DPBF MOSFET/IGBT drivers
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.43 EUR
37+1.93 EUR
500+1.92 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IR2153PBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD3474F1A6F5005056AB5A8F&compId=ir2153.pdf?ci_sign=4af5f815948fd1ff289fb81e6867b860118ddf46
IR2153PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Power: 1W
Mounting: THT
Operating temperature: -40...125°C
Turn-off time: 40ns
Turn-on time: 80ns
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Voltage class: 600V
Case: DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2153SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD3474F1A6F5005056AB5A8F&compId=ir2153.pdf?ci_sign=4af5f815948fd1ff289fb81e6867b860118ddf46
IR2153SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Number of channels: 2
Supply voltage: 10...15.6V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 40ns
Turn-on time: 80ns
Power: 625mW
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Anzahl je Verpackung: 1 Stücke
auf Bestellung 251 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
37+1.97 EUR
42+1.72 EUR
46+1.56 EUR
50+1.43 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
IR2153STRPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8A926E51A75EA&compId=IR2153DPBF.pdf?ci_sign=467d7c213ad01b739971cced2176d04c6b7f1be5
IR2153STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Mounting: SMD
Operating temperature: -40...125°C
Turn-off time: 40ns
Turn-on time: 80ns
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Voltage class: 600V
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: reel; tape
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2166PBF ir2166.pdf?fileId=5546d462533600a4015355c9049416c0
Hersteller: INFINEON TECHNOLOGIES
IR2166PBF MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2166STRPBF ir2166.pdf?fileId=5546d462533600a4015355c9049416c0
Hersteller: INFINEON TECHNOLOGIES
IR2166STRPBF MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2175STRPBF IRSDS17958-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
IR2175STRPBF MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2181SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD34A5F1A6F5005056AB5A8F&compId=ir2181.pdf?ci_sign=c5a6339eac545a9ba06e6dda4e6c0792928b2542
IR2181SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Protection: undervoltage UVP
Voltage class: 600V
Turn-off time: 0.22µs
Turn-on time: 180ns
Power: 625mW
Integrated circuit features: charge pump; integrated bootstrap functionality
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+7.95 EUR
14+5.11 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IR21834SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA37A807C1553D7&compId=IR2183SPBF.pdf?ci_sign=1842ad47fa85b992a3d7b9b7c6d4ee278eb4f9ff
IR21834SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 0.22µs
Turn-on time: 180ns
Power: 1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+7.95 EUR
12+5.96 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IR2183SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA37A807C1553D7&compId=IR2183SPBF.pdf?ci_sign=1842ad47fa85b992a3d7b9b7c6d4ee278eb4f9ff
IR2183SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 2
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V DC
Turn-on time: 180ns
Turn-off time: 0.22µs
Power: 625mW
Topology: MOSFET half-bridge
Kind of package: tube
Voltage class: 600V
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 73 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
19+3.88 EUR
21+3.52 EUR
22+3.33 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IR21844PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR21844PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2.3...1.9A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+71.5 EUR
3+23.84 EUR
4+17.88 EUR
11+6.51 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IR21844SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR21844SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Protection: short circuit protection SCP; undervoltage UVP
Voltage class: 600V
Turn-off time: 270ns
Turn-on time: 680ns
Power: 1W
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.7 EUR
23+3.1 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IR21844STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR21844STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2184PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR2184PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Protection: short circuit protection SCP; undervoltage UVP
Voltage class: 600V
Turn-off time: 270ns
Turn-on time: 680ns
Power: 1W
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Anzahl je Verpackung: 1 Stücke
auf Bestellung 142 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
22+3.39 EUR
32+2.27 EUR
34+2.14 EUR
3000+2.07 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IR2184SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR2184SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Protection: short circuit protection SCP; undervoltage UVP
Voltage class: 600V
Turn-off time: 270ns
Turn-on time: 680ns
Power: 625mW
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Anzahl je Verpackung: 1 Stücke
auf Bestellung 230 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.65 EUR
21+3.42 EUR
27+2.73 EUR
28+2.59 EUR
50+2.49 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IR2184STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR2184STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Protection: short circuit protection SCP; undervoltage UVP
Voltage class: 600V
Turn-off time: 270ns
Turn-on time: 680ns
Power: 625mW
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2473 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+4.2 EUR
19+3.93 EUR
35+2.1 EUR
36+1.99 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IR2213PBF ir2213.pdf?fileId=5546d462533600a4015355c9621716d8
Hersteller: INFINEON TECHNOLOGIES
IR2213PBF MOSFET/IGBT drivers
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+11.91 EUR
7+10.21 EUR
25+7.74 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IR2213SPBF ir2213.pdf?fileId=5546d462533600a4015355c9621716d8
Hersteller: INFINEON TECHNOLOGIES
IR2213SPBF MOSFET/IGBT drivers
Produkt ist nicht verfügbar
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IR2214SSPBF Infineon-IR2x14SS-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a5a8fa04a9b
Hersteller: INFINEON TECHNOLOGIES
IR2214SSPBF MOSFET/IGBT drivers
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.44 EUR
12+6.25 EUR
13+5.91 EUR
550+5.71 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IR2233JPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29
IR2233JPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Case: PLCC44
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 700ns
Turn-on time: 750ns
Number of channels: 6
Power: 2W
Supply voltage: 10...20V DC
Voltage class: 1.2kV
Type of integrated circuit: driver
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+11.28 EUR
8+9.62 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IR2233PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29
IR2233PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP28-W
Output current: -420...200mA
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: tube
Voltage class: 1.2kV
Power: 1.5W
Turn-on time: 750ns
Turn-off time: 700ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2233SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29
IR2233SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: tube
Voltage class: 1.2kV
Power: 1.6W
Turn-on time: 750ns
Turn-off time: 700ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2301PBF IRSDS09266-1.pdf?t.download=true&u=5oefqw ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc
Hersteller: INFINEON TECHNOLOGIES
IR2301PBF MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2301SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A8A1225C6A08FE27&compId=IR2301-DTE.pdf?ci_sign=c01e57684be53c86afb6cbf1626263184500b01c
IR2301SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 220ns
Power: 625mW
Integrated circuit features: charge pump; integrated bootstrap functionality
Anzahl je Verpackung: 1 Stücke
auf Bestellung 159 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
33+2.17 EUR
44+1.66 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IR2302SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC26C57EF875EA&compId=IR2302SPBF.pdf?ci_sign=54d75faffa7f118a9bddf8a8184ab731f8d9a7e1
IR2302SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Voltage class: 600V
Topology: MOSFET half-bridge
Output current: -0.35...0.2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+7.95 EUR
12+5.96 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IR2302STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC26C57EF875EA&compId=IR2302SPBF.pdf?ci_sign=54d75faffa7f118a9bddf8a8184ab731f8d9a7e1
IR2302STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Voltage class: 600V
Topology: MOSFET half-bridge
Output current: -0.35...0.2A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2304SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA49DF8BDAB53D7&compId=ir2304.pdf?ci_sign=7f72118dd22d9864326e5acc4031a73c65be54a0
IR2304SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Turn-off time: 0.22µs
Turn-on time: 220ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Topology: MOSFET half-bridge
Output current: -130...60mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
27+2.65 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IR2308SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA4CBED651ED3D7&compId=ir2308.pdf?ci_sign=88067d29a6d1af22ccd027f1b1c11127c536abc6
IR2308SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Turn-off time: 200ns
Turn-on time: 220ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Topology: MOSFET half-bridge
Output current: -0.35...0.2A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR38163MTRPBFAUMA1 Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c
Hersteller: INFINEON TECHNOLOGIES
IR38163MTRPBF Voltage regulators - DC/DC circuits
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR38165MTRPBFAUMA1 Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c
Hersteller: INFINEON TECHNOLOGIES
IR38165MTRPBF Voltage regulators - DC/DC circuits
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR38263MTRPBFAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE8959CE379BD04F3D5&compId=IR38263M.pdf?ci_sign=f4a4112111a3d25c5f97e732653620611218005c
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Topology: buck
Kind of package: reel; tape
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Case: PQFN5X7
Interface: PMBus; PVID
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
DC supply current: 50mA
Output current: 30A
Output voltage: 0.5...14V DC
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Frequency: 0.15...1.5MHz
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR38265MTRPBFAUMA1 Infineon-IR38265M-DS-v03_02-EN.pdf?fileId=5546d4625b62cd8a015bcf8202606e55
Hersteller: INFINEON TECHNOLOGIES
IR38265MTRPBF Voltage regulators - DC/DC circuits
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR38363MTRPBFAUMA1 Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c
Hersteller: INFINEON TECHNOLOGIES
IR38363MTRPBF Voltage regulators - DC/DC circuits
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR38365MTRPBFAUMA1 Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c
Hersteller: INFINEON TECHNOLOGIES
IR38365MTRPBF Voltage regulators - DC/DC circuits
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR4311MTRPBF ir4301.pdf?fileId=5546d462533600a4015355d5fc691819
Hersteller: INFINEON TECHNOLOGIES
IR4311MTRPBF RTV - audio integrated circuits
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR4312MTRPBF ir4302.pdf?fileId=5546d462533600a4015355d602a9181d
Hersteller: INFINEON TECHNOLOGIES
IR4312MTRPBF RTV - audio integrated circuits
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR4427PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD978B3DAEA15EA&compId=IR4427PBF.pdf?ci_sign=8e23c3bb3101481f9a2340888126ceaba824bf91
IR4427PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -1.5...1.5A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 65ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
27+2.67 EUR
34+2.1 EUR
50+1.83 EUR
100+1.79 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IR4427STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD978B3DAEA15EA&compId=IR4427PBF.pdf?ci_sign=8e23c3bb3101481f9a2340888126ceaba824bf91
IR4427STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -1.5...1.5A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 85ns
Turn-off time: 65ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2558 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
36+2.02 EUR
48+1.52 EUR
49+1.47 EUR
50+1.44 EUR
52+1.4 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IRF100B201 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CFB8F0CDC860D5&compId=IRF100x201.pdf?ci_sign=06ba51b9318616c3f07bc1af27d7d1e387b87aee
IRF100B201
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Kind of package: tube
Case: TO220AB
Drain-source voltage: 100V
Drain current: 136A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 255nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 690A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+4.18 EUR
32+2.29 EUR
34+2.16 EUR
2000+2.09 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IRF100B202 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBD7E4834504143&compId=IRF100B202.pdf?ci_sign=dc0c1d246a2fcd1cfdff23f0c329ab2539115b09
IRF100B202
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 221W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 195 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
32+2.26 EUR
52+1.39 EUR
63+1.14 EUR
67+1.07 EUR
2000+1.04 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IRF100S201 irf100s201.pdf?fileId=5546d462533600a4015355da574c1880
Hersteller: INFINEON TECHNOLOGIES
IRF100S201 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1010EPBF description pVersion=0046&contRep=ZT&docId=E1C04E34F57A41F1A6F5005056AB5A8F&compId=irf1010e.pdf?ci_sign=4e33b918874e4f5bb5c633f1a31b0fc4da8e2c04
IRF1010EPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 81A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.6nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 166 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
59+1.22 EUR
64+1.13 EUR
99+0.73 EUR
104+0.69 EUR
500+0.67 EUR
1000+0.66 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
IRF1010ESTRLPBF Infineon-IRF1010ES-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee35a00063b
IRF1010ESTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 59A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 330A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 317 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
39+1.86 EUR
46+1.59 EUR
79+0.92 EUR
82+0.87 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IRF1010EZPBF description pVersion=0046&contRep=ZT&docId=E1C04E34F57A4FF1A6F5005056AB5A8F&compId=irf1010ez.pdf?ci_sign=ed8bcac49cadd537057bdfcef3363db1c4c84ff7
IRF1010EZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 153 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
50+1.43 EUR
57+1.26 EUR
66+1.09 EUR
114+0.63 EUR
120+0.6 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRF1010NPBF description pVersion=0046&contRep=ZT&docId=E1C04E34F57A56F1A6F5005056AB5A8F&compId=irf1010n.pdf?ci_sign=2a254e785e882b9531549c4036747a933dac8b99
IRF1010NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO220AB
Type of transistor: N-MOSFET
Case: TO220AB
Drain-source voltage: 55V
Drain current: 72A
On-state resistance: 11mΩ
Power dissipation: 130W
Polarisation: unipolar
Kind of package: tube
Gate charge: 80nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
43+1.69 EUR
50+1.44 EUR
51+1.4 EUR
1000+0.9 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
IRF1010NSTRLPBF pVersion=0046&contRep=ZT&docId=E21F5D0C960DA8F1A303005056AB0C4F&compId=irf1010nspbf.pdf?ci_sign=0a22a84cce4fe094cee35a09a9cba0abc4efcb3a
IRF1010NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 800 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
50+1.43 EUR
59+1.23 EUR
99+0.73 EUR
105+0.69 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRF1018EPBF description pVersion=0046&contRep=ZT&docId=E1C04E34F57A72F1A6F5005056AB5A8F&compId=irf1018epbf.pdf?ci_sign=9421567cb65140505372d9bbe28ae392c50f1431
IRF1018EPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 716 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
41+1.77 EUR
60+1.2 EUR
66+1.1 EUR
133+0.54 EUR
141+0.51 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
IRF1018ESTRLPBF irf1018epbf.pdf?fileId=5546d462533600a4015355da854e1891
Hersteller: INFINEON TECHNOLOGIES
IRF1018ESTRLPBF SMD N channel transistors
auf Bestellung 694 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
38+1.89 EUR
85+0.85 EUR
90+0.8 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
IRF1104PBF pVersion=0046&contRep=ZT&docId=E1C04E34F57A87F1A6F5005056AB5A8F&compId=irf1104.pdf?ci_sign=a8b80656af041888259f2e24ae234f5b866c90ce
IRF1104PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
43+1.66 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
IRF1310NPBF pVersion=0046&contRep=ZT&docId=E1C04E34F57A8EF1A6F5005056AB5A8F&compId=irf1310n.pdf?ci_sign=f86653c14d07ebcb26335896999b26309cf65da1
IRF1310NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 73.3nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 144 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
35+2.07 EUR
49+1.47 EUR
84+0.86 EUR
88+0.82 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRF1310NSTRLPBF irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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