Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149887) > Seite 1286 nach 2499
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IR2213PBF | INFINEON TECHNOLOGIES |
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auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2213SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16 Type of integrated circuit: driver Operating temperature: -40...125°C Case: SO16 Power: 1.25W Supply voltage: 12...20V DC Turn-on time: 280ns Turn-off time: 225ns Output current: -2...1.7A Number of channels: 2 Kind of package: tube Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IR2214SSPBF | INFINEON TECHNOLOGIES |
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auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2233JPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: PLCC44 Output current: -420...200mA Mounting: SMD Turn-on time: 750ns Turn-off time: 700ns Number of channels: 6 Integrated circuit features: charge pump; dead time; integrated bootstrap functionality Kind of package: tube Topology: IGBT three-phase bridge; MOSFET three-phase bridge Operating temperature: -40...125°C Voltage class: 1.2kV Power: 2W Supply voltage: 10...20V DC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2233PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP28-W Output current: -420...200mA Power: 1.5W Number of channels: 6 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 1.2kV Turn-on time: 750ns Turn-off time: 700ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IR2233SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Operating temperature: -40...125°C Supply voltage: 10...20V DC Turn-on time: 750ns Turn-off time: 700ns Output current: -420...200mA Type of integrated circuit: driver Number of channels: 6 Kind of package: tube Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Voltage class: 1.2kV Mounting: SMD Case: SO28-W Power: 1.6W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IR2301PBF | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IR2301SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Case: SO8 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Turn-off time: 200ns Number of channels: 2 Turn-on time: 220ns Integrated circuit features: charge pump; integrated bootstrap functionality Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Supply voltage: 5...20V DC Output current: -0.35...0.2A Power: 625mW Anzahl je Verpackung: 1 Stücke |
auf Bestellung 169 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2302SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Case: SO8 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Turn-off time: 200ns Number of channels: 2 Turn-on time: 750ns Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Supply voltage: 5...20V DC Output current: -0.35...0.2A Power: 625mW Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2302STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Case: SO8 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Turn-off time: 200ns Number of channels: 2 Turn-on time: 750ns Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Supply voltage: 5...20V DC Output current: -0.35...0.2A Power: 625mW Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IR2304SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Case: SO8 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Turn-off time: 0.22µs Number of channels: 2 Turn-on time: 220ns Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Supply voltage: 10...20V DC Output current: -130...60mA Power: 625mW Anzahl je Verpackung: 1 Stücke |
auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2308SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Case: SO8 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Turn-off time: 200ns Number of channels: 2 Turn-on time: 220ns Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Supply voltage: 10...20V DC Output current: -0.35...0.2A Power: 625mW Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IR38163MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IR38165MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IR38263MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7 Operating temperature: -40...125°C Case: PQFN5X7 DC supply current: 50mA Supply voltage: 4.5...5.5V Frequency: 0.15...1.5MHz Output voltage: 0.5...14V DC Output current: 30A Type of integrated circuit: PMIC Interface: PMBus; PVID Number of channels: 1 Input voltage: 5.3...16V DC Kind of package: reel; tape Kind of integrated circuit: POL converter Topology: buck Mounting: SMD Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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IR38265MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7 Operating temperature: -40...125°C Case: PQFN5X7 DC supply current: 50mA Supply voltage: 4.5...5.5V Frequency: 0.15...1.5MHz Output voltage: 0.5...14V DC Output current: 30A Type of integrated circuit: PMIC Interface: I2C; PVID Number of channels: 1 Input voltage: 5.3...16V DC Kind of package: reel; tape Topology: buck Kind of integrated circuit: POL converter Mounting: SMD Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IR38363MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IR38365MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IR4311MTRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: audio amplifier; Pout: 35W; Ch: 1; Amp.class: D; PQFN5X6 Type of integrated circuit: audio amplifier Case: PQFN5X6 Mounting: SMD Amplifier class: D Number of channels: 1 Output power: 35W Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IR4312MTRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: audio amplifier; Pout: 35W; Ch: 2; Amp.class: D; PQFN7X7 Type of integrated circuit: audio amplifier Case: PQFN7X7 Mounting: SMD Amplifier class: D Number of channels: 2 Output power: 35W Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IR4427PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -1.5...1.5A Mounting: THT Turn-on time: 85ns Turn-off time: 65ns Number of channels: 2 Kind of package: tube Topology: IGBT half-bridge; MOSFET half-bridge Operating temperature: -40...125°C Power: 1W Supply voltage: 6...20V DC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 42 Stücke: Lieferzeit 7-14 Tag (e) |
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IR4427STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -1.5...1.5A Mounting: SMD Turn-on time: 85ns Turn-off time: 65ns Number of channels: 2 Kind of package: reel; tape Topology: IGBT half-bridge; MOSFET half-bridge Operating temperature: -40...125°C Power: 625mW Supply voltage: 6...20V DC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2587 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF100B201 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 136A Pulsed drain current: 690A Power dissipation: 441W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 127 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF100B202 | INFINEON TECHNOLOGIES |
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auf Bestellung 37 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF100S201 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IRF1010EPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 81A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Gate charge: 86.6nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1010ESTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 59A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 330A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 331 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1010EZPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 84A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 34 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1010NPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 72A Power dissipation: 130W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 141 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1010NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 60A Power dissipation: 180W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: reel Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IRF1018EPBF | INFINEON TECHNOLOGIES |
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auf Bestellung 1749 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1018ESTRLPBF | INFINEON TECHNOLOGIES |
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auf Bestellung 694 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1104PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB Mounting: THT Drain-source voltage: 40V Drain current: 100A On-state resistance: 9mΩ Type of transistor: N-MOSFET Power dissipation: 170W Polarisation: unipolar Kind of package: tube Gate charge: 62nC Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±20V Case: TO220AB Anzahl je Verpackung: 1 Stücke |
auf Bestellung 43 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1310NPBF | INFINEON TECHNOLOGIES |
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auf Bestellung 204 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1310NSTRLPBF | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IRF1324PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 24V; 353A; 300W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 24V Drain current: 353A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 53 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF135B203 | INFINEON TECHNOLOGIES |
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auf Bestellung 85 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF135S203 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IRF1404LPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: TO262 Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 110 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1404PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube Gate charge: 160nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 84 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1404STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of channel: enhancement Kind of package: reel Anzahl je Verpackung: 1 Stücke |
auf Bestellung 671 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1404STRRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of channel: enhancement Kind of package: reel Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRF1404ZPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 190A Power dissipation: 220W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube Gate charge: 0.1µC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 112 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1404ZSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 190A Power dissipation: 220W Case: D2PAK Mounting: SMD Kind of channel: enhancement Kind of package: reel Anzahl je Verpackung: 1 Stücke |
auf Bestellung 735 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1405PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 133A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 133A Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 170nC On-state resistance: 5.3mΩ Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 370 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1405STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 131A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 131A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRF1405ZPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 150A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 150A Power dissipation: 230W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 282 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1407PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 130A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube Gate charge: 160nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 192 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF1407STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 70A; Idm: 520A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 70A Pulsed drain current: 520A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IRF200B211 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
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IRF200P222 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 129A; 556W Drain-source voltage: 200V Drain current: 129A On-state resistance: 6.6mΩ Type of transistor: N-MOSFET Power dissipation: 556W Polarisation: unipolar Kind of package: tube Gate charge: 203nC Technology: StrongIRFET™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO247AC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF200P223 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 71A; 313W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 71A Power dissipation: 313W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 102nC Technology: StrongIRFET™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF2204PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 210A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 330W Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 97 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF250P224 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W Type of transistor: N-MOSFET Power dissipation: 313W Polarisation: unipolar Case: TO247AC Kind of package: tube Mounting: THT Gate charge: 203nC Technology: StrongIRFET™ Kind of channel: enhancement Drain-source voltage: 250V Gate-source voltage: ±20V Drain current: 68A On-state resistance: 12mΩ Anzahl je Verpackung: 400 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRF250P225 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 49A; 313W Type of transistor: N-MOSFET Power dissipation: 313W Polarisation: unipolar Case: TO247AC Kind of package: tube Mounting: THT Gate charge: 96nC Technology: StrongIRFET™ Kind of channel: enhancement Drain-source voltage: 250V Gate-source voltage: ±20V Drain current: 49A On-state resistance: 22mΩ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 21 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF2804LPBF | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IRF2804PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO220AB Mounting: THT Drain-source voltage: 40V Drain current: 280A On-state resistance: 2.3mΩ Type of transistor: N-MOSFET Power dissipation: 330W Polarisation: unipolar Kind of package: tube Gate charge: 160nC Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±20V Case: TO220AB Anzahl je Verpackung: 1 Stücke |
auf Bestellung 316 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF2804STRL7PP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 330W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 320A Power dissipation: 330W Case: D2PAK-7 Mounting: SMD Kind of package: reel Kind of channel: enhancement Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRF2804STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK Mounting: SMD Drain-source voltage: 40V Drain current: 280A Type of transistor: N-MOSFET Power dissipation: 330W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhancement Case: D2PAK Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRF2804STRRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 280A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IR2213PBF |
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Hersteller: INFINEON TECHNOLOGIES
IR2213PBF MOSFET/IGBT drivers
IR2213PBF MOSFET/IGBT drivers
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 11.91 EUR |
7+ | 10.21 EUR |
25+ | 7.74 EUR |
IR2213SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: SO16
Power: 1.25W
Supply voltage: 12...20V DC
Turn-on time: 280ns
Turn-off time: 225ns
Output current: -2...1.7A
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: SO16
Power: 1.25W
Supply voltage: 12...20V DC
Turn-on time: 280ns
Turn-off time: 225ns
Output current: -2...1.7A
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR2214SSPBF |
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Hersteller: INFINEON TECHNOLOGIES
IR2214SSPBF MOSFET/IGBT drivers
IR2214SSPBF MOSFET/IGBT drivers
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.44 EUR |
12+ | 6.25 EUR |
13+ | 5.91 EUR |
550+ | 5.71 EUR |
IR2233JPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Mounting: SMD
Turn-on time: 750ns
Turn-off time: 700ns
Number of channels: 6
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Kind of package: tube
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Operating temperature: -40...125°C
Voltage class: 1.2kV
Power: 2W
Supply voltage: 10...20V DC
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Mounting: SMD
Turn-on time: 750ns
Turn-off time: 700ns
Number of channels: 6
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Kind of package: tube
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Operating temperature: -40...125°C
Voltage class: 1.2kV
Power: 2W
Supply voltage: 10...20V DC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.67 EUR |
8+ | 9.65 EUR |
IR2233PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP28-W
Output current: -420...200mA
Power: 1.5W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP28-W
Output current: -420...200mA
Power: 1.5W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR2233SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Operating temperature: -40...125°C
Supply voltage: 10...20V DC
Turn-on time: 750ns
Turn-off time: 700ns
Output current: -420...200mA
Type of integrated circuit: driver
Number of channels: 6
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 1.2kV
Mounting: SMD
Case: SO28-W
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Operating temperature: -40...125°C
Supply voltage: 10...20V DC
Turn-on time: 750ns
Turn-off time: 700ns
Output current: -420...200mA
Type of integrated circuit: driver
Number of channels: 6
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 1.2kV
Mounting: SMD
Case: SO28-W
Power: 1.6W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR2301PBF |
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Hersteller: INFINEON TECHNOLOGIES
IR2301PBF MOSFET/IGBT drivers
IR2301PBF MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR2301SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 220ns
Integrated circuit features: charge pump; integrated bootstrap functionality
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 5...20V DC
Output current: -0.35...0.2A
Power: 625mW
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 220ns
Integrated circuit features: charge pump; integrated bootstrap functionality
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 5...20V DC
Output current: -0.35...0.2A
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 169 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.82 EUR |
44+ | 1.64 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |
2500+ | 0.92 EUR |
IR2302SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 750ns
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 5...20V DC
Output current: -0.35...0.2A
Power: 625mW
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 750ns
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 5...20V DC
Output current: -0.35...0.2A
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.15 EUR |
12+ | 5.96 EUR |
IR2302STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 750ns
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 5...20V DC
Output current: -0.35...0.2A
Power: 625mW
Anzahl je Verpackung: 2500 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 750ns
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 5...20V DC
Output current: -0.35...0.2A
Power: 625mW
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR2304SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 0.22µs
Number of channels: 2
Turn-on time: 220ns
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V DC
Output current: -130...60mA
Power: 625mW
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 0.22µs
Number of channels: 2
Turn-on time: 220ns
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V DC
Output current: -130...60mA
Power: 625mW
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.46 EUR |
32+ | 2.23 EUR |
IR2308SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 220ns
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V DC
Output current: -0.35...0.2A
Power: 625mW
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 220ns
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V DC
Output current: -0.35...0.2A
Power: 625mW
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR38163MTRPBFAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
IR38163MTRPBF Voltage regulators - DC/DC circuits
IR38163MTRPBF Voltage regulators - DC/DC circuits
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR38165MTRPBFAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
IR38165MTRPBF Voltage regulators - DC/DC circuits
IR38165MTRPBF Voltage regulators - DC/DC circuits
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR38263MTRPBFAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Operating temperature: -40...125°C
Case: PQFN5X7
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: PMBus; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of package: reel; tape
Kind of integrated circuit: POL converter
Topology: buck
Mounting: SMD
Anzahl je Verpackung: 4000 Stücke
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Operating temperature: -40...125°C
Case: PQFN5X7
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: PMBus; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of package: reel; tape
Kind of integrated circuit: POL converter
Topology: buck
Mounting: SMD
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR38265MTRPBFAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Operating temperature: -40...125°C
Case: PQFN5X7
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: I2C; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: POL converter
Mounting: SMD
Anzahl je Verpackung: 4000 Stücke
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Operating temperature: -40...125°C
Case: PQFN5X7
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: I2C; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: POL converter
Mounting: SMD
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR38363MTRPBFAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
IR38363MTRPBF Voltage regulators - DC/DC circuits
IR38363MTRPBF Voltage regulators - DC/DC circuits
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR38365MTRPBFAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
IR38365MTRPBF Voltage regulators - DC/DC circuits
IR38365MTRPBF Voltage regulators - DC/DC circuits
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR4311MTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; Ch: 1; Amp.class: D; PQFN5X6
Type of integrated circuit: audio amplifier
Case: PQFN5X6
Mounting: SMD
Amplifier class: D
Number of channels: 1
Output power: 35W
Anzahl je Verpackung: 4000 Stücke
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; Ch: 1; Amp.class: D; PQFN5X6
Type of integrated circuit: audio amplifier
Case: PQFN5X6
Mounting: SMD
Amplifier class: D
Number of channels: 1
Output power: 35W
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR4312MTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; Ch: 2; Amp.class: D; PQFN7X7
Type of integrated circuit: audio amplifier
Case: PQFN7X7
Mounting: SMD
Amplifier class: D
Number of channels: 2
Output power: 35W
Anzahl je Verpackung: 3000 Stücke
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; Ch: 2; Amp.class: D; PQFN7X7
Type of integrated circuit: audio amplifier
Case: PQFN7X7
Mounting: SMD
Amplifier class: D
Number of channels: 2
Output power: 35W
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR4427PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -1.5...1.5A
Mounting: THT
Turn-on time: 85ns
Turn-off time: 65ns
Number of channels: 2
Kind of package: tube
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Power: 1W
Supply voltage: 6...20V DC
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -1.5...1.5A
Mounting: THT
Turn-on time: 85ns
Turn-off time: 65ns
Number of channels: 2
Kind of package: tube
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Power: 1W
Supply voltage: 6...20V DC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.39 EUR |
37+ | 1.97 EUR |
39+ | 1.86 EUR |
500+ | 1.83 EUR |
1000+ | 1.80 EUR |
IR4427STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -1.5...1.5A
Mounting: SMD
Turn-on time: 85ns
Turn-off time: 65ns
Number of channels: 2
Kind of package: reel; tape
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Power: 625mW
Supply voltage: 6...20V DC
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -1.5...1.5A
Mounting: SMD
Turn-on time: 85ns
Turn-off time: 65ns
Number of channels: 2
Kind of package: reel; tape
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Power: 625mW
Supply voltage: 6...20V DC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2587 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.14 EUR |
38+ | 1.93 EUR |
49+ | 1.47 EUR |
52+ | 1.40 EUR |
2500+ | 1.37 EUR |
IRF100B201 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 127 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.18 EUR |
32+ | 2.29 EUR |
34+ | 2.16 EUR |
2000+ | 2.09 EUR |
IRF100B202 |
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Hersteller: INFINEON TECHNOLOGIES
IRF100B202 THT N channel transistors
IRF100B202 THT N channel transistors
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.37 EUR |
37+ | 1.93 EUR |
41+ | 1.74 EUR |
2000+ | 1.10 EUR |
IRF100S201 |
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Hersteller: INFINEON TECHNOLOGIES
IRF100S201 SMD N channel transistors
IRF100S201 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF1010EPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 81A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.6nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 81A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.6nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.65 EUR |
64+ | 1.12 EUR |
IRF1010ESTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 59A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 330A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 59A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 330A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 331 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.33 EUR |
45+ | 1.62 EUR |
79+ | 0.92 EUR |
82+ | 0.87 EUR |
3200+ | 0.84 EUR |
IRF1010EZPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.10 EUR |
73+ | 0.97 EUR |
IRF1010NPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 141 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
43+ | 1.69 EUR |
50+ | 1.44 EUR |
74+ | 0.97 EUR |
79+ | 0.92 EUR |
1000+ | 0.90 EUR |
IRF1010NSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF1018EPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
IRF1018EPBF THT N channel transistors
IRF1018EPBF THT N channel transistors
auf Bestellung 1749 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.10 EUR |
125+ | 0.58 EUR |
132+ | 0.54 EUR |
IRF1018ESTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRF1018ESTRLPBF SMD N channel transistors
IRF1018ESTRLPBF SMD N channel transistors
auf Bestellung 694 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.89 EUR |
85+ | 0.85 EUR |
90+ | 0.80 EUR |
IRF1104PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Mounting: THT
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 62nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Mounting: THT
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 62nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.67 EUR |
36+ | 2.02 EUR |
43+ | 1.66 EUR |
IRF1310NPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRF1310NPBF THT N channel transistors
IRF1310NPBF THT N channel transistors
auf Bestellung 204 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.76 EUR |
81+ | 0.89 EUR |
87+ | 0.83 EUR |
IRF1310NSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRF1310NSTRLPBF SMD N channel transistors
IRF1310NSTRLPBF SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF1324PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 353A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 353A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 353A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 353A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 53 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.68 EUR |
35+ | 2.10 EUR |
36+ | 1.99 EUR |
50+ | 1.97 EUR |
100+ | 1.92 EUR |
IRF135B203 |
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Hersteller: INFINEON TECHNOLOGIES
IRF135B203 THT N channel transistors
IRF135B203 THT N channel transistors
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.68 EUR |
37+ | 1.97 EUR |
39+ | 1.87 EUR |
IRF135S203 |
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Hersteller: INFINEON TECHNOLOGIES
IRF135S203 SMD N channel transistors
IRF135S203 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF1404LPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 110 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.23 EUR |
23+ | 3.19 EUR |
48+ | 1.52 EUR |
50+ | 1.43 EUR |
IRF1404PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 160nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 160nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 84 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.87 EUR |
34+ | 2.16 EUR |
53+ | 1.37 EUR |
55+ | 1.30 EUR |
500+ | 1.26 EUR |
IRF1404STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Anzahl je Verpackung: 1 Stücke
auf Bestellung 671 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.26 EUR |
31+ | 2.32 EUR |
63+ | 1.14 EUR |
67+ | 1.07 EUR |
1600+ | 1.04 EUR |
IRF1404STRRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF1404ZPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 0.1µC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 0.1µC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 112 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.25 EUR |
49+ | 1.49 EUR |
81+ | 0.89 EUR |
85+ | 0.84 EUR |
5000+ | 0.82 EUR |
IRF1404ZSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Power dissipation: 220W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Anzahl je Verpackung: 1 Stücke
auf Bestellung 735 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.62 EUR |
38+ | 1.92 EUR |
52+ | 1.39 EUR |
55+ | 1.30 EUR |
250+ | 1.26 EUR |
IRF1405PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 133A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 133A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 170nC
On-state resistance: 5.3mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 133A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 133A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 170nC
On-state resistance: 5.3mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 370 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 3.06 EUR |
46+ | 1.56 EUR |
63+ | 1.14 EUR |
66+ | 1.09 EUR |
IRF1405STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 131A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 131A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 131A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 131A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF1405ZPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 150A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 150A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 150A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 150A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 282 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.85 EUR |
60+ | 1.20 EUR |
63+ | 1.14 EUR |
IRF1407PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 160nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 160nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 192 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.42 EUR |
28+ | 2.59 EUR |
53+ | 1.36 EUR |
56+ | 1.29 EUR |
IRF1407STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; Idm: 520A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 520A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; Idm: 520A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 520A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF200B211 |
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Hersteller: INFINEON TECHNOLOGIES
IRF200B211 THT N channel transistors
IRF200B211 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF200P222 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 129A; 556W
Drain-source voltage: 200V
Drain current: 129A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 556W
Polarisation: unipolar
Kind of package: tube
Gate charge: 203nC
Technology: StrongIRFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247AC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 129A; 556W
Drain-source voltage: 200V
Drain current: 129A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 556W
Polarisation: unipolar
Kind of package: tube
Gate charge: 203nC
Technology: StrongIRFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247AC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.55 EUR |
9+ | 8.04 EUR |
50+ | 7.74 EUR |
IRF200P223 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 71A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 71A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 102nC
Technology: StrongIRFET™
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 71A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 71A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 102nC
Technology: StrongIRFET™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.16 EUR |
14+ | 5.36 EUR |
15+ | 5.06 EUR |
50+ | 4.88 EUR |
IRF2204PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 330W
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 330W
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 97 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.59 EUR |
44+ | 1.63 EUR |
47+ | 1.54 EUR |
1000+ | 1.49 EUR |
IRF250P224 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Case: TO247AC
Kind of package: tube
Mounting: THT
Gate charge: 203nC
Technology: StrongIRFET™
Kind of channel: enhancement
Drain-source voltage: 250V
Gate-source voltage: ±20V
Drain current: 68A
On-state resistance: 12mΩ
Anzahl je Verpackung: 400 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Case: TO247AC
Kind of package: tube
Mounting: THT
Gate charge: 203nC
Technology: StrongIRFET™
Kind of channel: enhancement
Drain-source voltage: 250V
Gate-source voltage: ±20V
Drain current: 68A
On-state resistance: 12mΩ
Anzahl je Verpackung: 400 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF250P225 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 49A; 313W
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Case: TO247AC
Kind of package: tube
Mounting: THT
Gate charge: 96nC
Technology: StrongIRFET™
Kind of channel: enhancement
Drain-source voltage: 250V
Gate-source voltage: ±20V
Drain current: 49A
On-state resistance: 22mΩ
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 49A; 313W
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Case: TO247AC
Kind of package: tube
Mounting: THT
Gate charge: 96nC
Technology: StrongIRFET™
Kind of channel: enhancement
Drain-source voltage: 250V
Gate-source voltage: ±20V
Drain current: 49A
On-state resistance: 22mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.74 EUR |
12+ | 6.15 EUR |
13+ | 5.81 EUR |
25+ | 5.59 EUR |
IRF2804LPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
IRF2804LPBF THT N channel transistors
IRF2804LPBF THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF2804PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO220AB
Mounting: THT
Drain-source voltage: 40V
Drain current: 280A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 330W
Polarisation: unipolar
Kind of package: tube
Gate charge: 160nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO220AB
Mounting: THT
Drain-source voltage: 40V
Drain current: 280A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 330W
Polarisation: unipolar
Kind of package: tube
Gate charge: 160nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 316 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.47 EUR |
25+ | 2.96 EUR |
43+ | 1.67 EUR |
46+ | 1.59 EUR |
50+ | 1.57 EUR |
IRF2804STRL7PP |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 330W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 330W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 330W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 330W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF2804STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Mounting: SMD
Drain-source voltage: 40V
Drain current: 280A
Type of transistor: N-MOSFET
Power dissipation: 330W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Mounting: SMD
Drain-source voltage: 40V
Drain current: 280A
Type of transistor: N-MOSFET
Power dissipation: 330W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF2804STRRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH