Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (152107) > Seite 1281 nach 2536
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IKQ100N60TXKSA1 | INFINEON TECHNOLOGIES |
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IKQ120N60TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 833W Case: PG-TO247-3-46 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 703nC Turn-on time: 76ns Turn-off time: 343ns Collector current: 120A Gate-emitter voltage: ±20V Pulsed collector current: 480A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IKQ120N60TAXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 833W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 772nC Turn-on time: 76ns Turn-off time: 343ns Collector current: 120A Gate-emitter voltage: ±20V Pulsed collector current: 480A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IKQ40N120CH3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3 Type of transistor: IGBT Power dissipation: 136W Case: TO247-3 Mounting: THT Kind of package: tube Turn-off time: 331ns Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 40A Collector-emitter voltage: 1.2kV Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 76ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IKQ40N120CT2XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3 Type of transistor: IGBT Power dissipation: 133W Case: TO247-3 Mounting: THT Kind of package: tube Turn-off time: 379ns Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 40A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ 2 Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 75ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IKQ50N120CH3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 173W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 235nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: H3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IKQ50N120CT2XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 2 Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 151W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 235nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IKQ75N120CH3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3 Type of transistor: IGBT Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 0.37µC Collector current: 75A Gate-emitter voltage: ±20V Power dissipation: 256W Pulsed collector current: 300A Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IKQ75N120CS6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46 Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: PG-TO247-3-46 Mounting: THT Kind of package: tube Gate charge: 530nC Collector current: 75A Gate-emitter voltage: ±20V Power dissipation: 440W Pulsed collector current: 300A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ 6 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 32 Stücke: Lieferzeit 7-14 Tag (e) |
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IKQ75N120CT2XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3 Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 0.37µC Collector current: 75A Gate-emitter voltage: ±20V Power dissipation: 237W Pulsed collector current: 300A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ 2 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IKW08N120CS7XKSA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IKW08T120FKSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 58 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW15N120BH6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3 Type of transistor: IGBT Mounting: THT Case: TO247-3 Technology: TRENCHSTOP™ 6 Kind of package: tube Gate charge: 92nC Collector current: 15A Gate-emitter voltage: ±20V Power dissipation: 100W Pulsed collector current: 60A Collector-emitter voltage: 1.2kV Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 239 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW15N120H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3 Type of transistor: IGBT Mounting: THT Case: TO247-3 Technology: TRENCHSTOP™ 3 Kind of package: tube Gate charge: 75nC Collector current: 30A Gate-emitter voltage: ±20V Power dissipation: 217W Pulsed collector current: 60A Manufacturer series: H3 Collector-emitter voltage: 1.2kV Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW15N120T2FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3 Type of transistor: IGBT Mounting: THT Case: TO247-3 Technology: TRENCHSTOP™ 2 Kind of package: tube Turn-on time: 57ns Gate charge: 93nC Turn-off time: 457ns Collector current: 30A Gate-emitter voltage: ±20V Power dissipation: 235W Pulsed collector current: 60A Collector-emitter voltage: 1.2kV Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW20N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 85W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 85W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.12µC Turn-on time: 28ns Turn-off time: 205ns Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 80A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW20N60TFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 166W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.12µC Turn-on time: 36ns Turn-off time: 299ns Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 60A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 209 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW25N120CS7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 37A; 125W; TO247-3 Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 Mounting: THT Kind of package: tube Turn-on time: 38ns Gate charge: 150nC Turn-off time: 490ns Collector current: 37A Gate-emitter voltage: ±20V Power dissipation: 125W Pulsed collector current: 75A Collector-emitter voltage: 600V Technology: TRENCHSTOP™ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IKW25N120H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3 Type of transistor: IGBT Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 115nC Collector current: 50A Gate-emitter voltage: ±20V Power dissipation: 326W Pulsed collector current: 100A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ 3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 92 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW25N120T2FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3 Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 0.12µC Collector current: 50A Gate-emitter voltage: ±20V Power dissipation: 349W Pulsed collector current: 100A Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
auf Bestellung 53 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW25T120FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 50A; 190W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 190W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 75A Mounting: THT Gate charge: 155nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 36 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW30N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Kind of package: tube Collector current: 30A Gate-emitter voltage: ±20V Power dissipation: 94W Pulsed collector current: 120A Collector-emitter voltage: 600V Technology: TRENCHSTOP™ 3 Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode Gate charge: 165nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 224 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW30N60TFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 39A; TO247-3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Kind of package: tube Collector current: 39A Gate-emitter voltage: ±20V Pulsed collector current: 90A Collector-emitter voltage: 600V Technology: TRENCHSTOP™ Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 44ns Gate charge: 167nC Turn-off time: 0.3µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IKW30N65EL5XKSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW30N65ES5XKSA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IKW30N65H5XKSA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IKW30N65WR5XKSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 17 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW40N120CS6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3 Type of transistor: IGBT Power dissipation: 250W Case: TO247-3 Mounting: THT Gate charge: 285nC Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ 6 Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 98 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW40N120CS7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 56A Power dissipation: 179W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 230nC Kind of package: tube Turn-on time: 45ns Turn-off time: 0.5µs Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IKW40N120H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 80A Power dissipation: 483W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 185nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ 3 Manufacturer series: H3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 297 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW40N120T2FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3 Type of transistor: IGBT Power dissipation: 480W Case: TO247-3 Mounting: THT Gate charge: 192nC Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 165A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 59 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW40N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 153W Case: TO247-3 Mounting: THT Gate charge: 223nC Kind of package: tube Turn-on time: 52ns Turn-off time: 218ns Collector current: 40A Gate-emitter voltage: ±20V Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 160A Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 184 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW40N65ES5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 50A; 115W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 115W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 95nC Kind of package: tube Turn-on time: 37ns Turn-off time: 153ns Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ 5 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IKW40N65F5FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; F5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 74A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ 5 Manufacturer series: F5 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW40N65H5FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; H5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 74A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ 5 Manufacturer series: H5 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW40N65WR5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 40A; 115W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 115W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 193nC Kind of package: tube Turn-on time: 60ns Turn-off time: 448ns Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ 5 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW40T120FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 270W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 105A Mounting: THT Gate charge: 203nC Kind of package: tube Turn-on time: 92ns Turn-off time: 700ns Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW50N60DTPXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 159.6W Case: TO247-3 Mounting: THT Gate charge: 249nC Kind of package: tube Turn-on time: 50ns Turn-off time: 233ns Gate-emitter voltage: ±20V Features of semiconductor devices: integrated anti-parallel diode Collector current: 61A Pulsed collector current: 150A Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 207 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW50N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 167W Case: TO247-3 Mounting: THT Gate charge: 315nC Kind of package: tube Turn-on time: 54ns Turn-off time: 297ns Gate-emitter voltage: ±20V Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: H3 Collector current: 50A Pulsed collector current: 200A Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 356 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW50N60TFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 333W Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Features of semiconductor devices: integrated anti-parallel diode Collector current: 50A Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 320 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW50N65EH5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 138W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: H5 Technology: TRENCHSTOP™ 5 Turn-on time: 54ns Turn-off time: 207ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IKW50N65ES5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60.5A Power dissipation: 137W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ 5 Turn-on time: 47ns Turn-off time: 161ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IKW50N65F5FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 305W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: F5 Technology: TRENCHSTOP™ 5 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 241 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW50N65H5FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 305W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: H5 Technology: TRENCHSTOP™ 5 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 179 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW50N65WR5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 141W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 230nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ 5 Turn-on time: 79ns Turn-off time: 420ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 91 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW60N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 416W Case: TO247-3 Mounting: THT Gate charge: 375nC Kind of package: tube Collector current: 60A Pulsed collector current: 180A Manufacturer series: H3 Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 64ns Turn-off time: 314ns Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IKW75N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 428W Case: TO247-3 Mounting: THT Gate charge: 470nC Kind of package: tube Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 225A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 85ns Turn-off time: 332ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IKW75N60TFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 428W Case: TO247-3 Mounting: THT Gate charge: 470nC Kind of package: tube Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 225A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 69ns Turn-off time: 401ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW75N65EH5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 160nC Turn-on time: 61ns Turn-off time: 215ns Power dissipation: 198W Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 300A Collector-emitter voltage: 650V Manufacturer series: H5 Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IKW75N65ES5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 164nC Turn-on time: 86ns Turn-off time: 185ns Power dissipation: 197W Collector current: 80A Gate-emitter voltage: ±20V Pulsed collector current: 300A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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IKY40N120CH3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3 Type of transistor: IGBT Power dissipation: 136W Case: TO247PLUS-4 Mounting: THT Gate charge: 0.19µC Kind of package: tube Turn-off time: 306ns Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 59ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IKY40N120CS6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4 Type of transistor: IGBT Power dissipation: 250W Case: TO247PLUS-4 Mounting: THT Gate charge: 285nC Kind of package: tube Turn-off time: 342ns Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ 6 Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 54ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IKY50N120CH3XKSA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IKY75N120CH3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247PLUS-4; H3 Type of transistor: IGBT Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode Case: TO247PLUS-4 Mounting: THT Kind of package: tube Turn-on time: 70ns Gate charge: 0.37µC Turn-off time: 335ns Collector current: 75A Gate-emitter voltage: ±20V Power dissipation: 256W Pulsed collector current: 300A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IKY75N120CS6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4 Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: TO247PLUS-4 Mounting: THT Kind of package: tube Gate charge: 530nC Collector current: 75A Gate-emitter voltage: ±20V Power dissipation: 440W Pulsed collector current: 300A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ 6 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IKZ50N65ES5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60.5A Power dissipation: 137W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ 5 Turn-on time: 58ns Turn-off time: 326ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IKZ50N65NH5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 54A Power dissipation: 136W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: H5 Technology: TRENCHSTOP™ 5 Turn-on time: 30ns Turn-off time: 275ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IKZ75N65EL5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 100A; 268W; TO247-4 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Case: TO247-4 Mounting: THT Kind of package: tube Gate charge: 436nC Turn-on time: 143ns Turn-off time: 325ns Power dissipation: 268W Collector current: 100A Gate-emitter voltage: ±20V Pulsed collector current: 300A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IKZ75N65ES5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Case: TO247-4 Mounting: THT Kind of package: tube Gate charge: 164nC Turn-on time: 71ns Turn-off time: 427ns Power dissipation: 197W Collector current: 80A Gate-emitter voltage: ±20V Pulsed collector current: 300A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
ILD8150EXUMA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IKQ100N60TXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
IKQ100N60TXKSA1 THT IGBT transistors
IKQ100N60TXKSA1 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKQ120N60TXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: PG-TO247-3-46
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 703nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: PG-TO247-3-46
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 703nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKQ120N60TAXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 772nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 772nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKQ40N120CH3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 76ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 76ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKQ40N120CT2XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 2
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 75ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 2
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 75ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKQ50N120CH3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 173W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 173W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKQ50N120CT2XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 151W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 151W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKQ75N120CH3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3
Type of transistor: IGBT
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.37µC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 256W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3
Type of transistor: IGBT
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.37µC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 256W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKQ75N120CS6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: PG-TO247-3-46
Mounting: THT
Kind of package: tube
Gate charge: 530nC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 440W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: PG-TO247-3-46
Mounting: THT
Kind of package: tube
Gate charge: 530nC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 440W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.44 EUR |
11+ | 6.58 EUR |
IKQ75N120CT2XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.37µC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 237W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 2
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.37µC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 237W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKW08N120CS7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
IKW08N120CS7XKSA1 THT IGBT transistors
IKW08N120CS7XKSA1 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKW08T120FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
IKW08T120 THT IGBT transistors
IKW08T120 THT IGBT transistors
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.35 EUR |
31+ | 2.36 EUR |
33+ | 2.23 EUR |
240+ | 2.22 EUR |
IKW15N120BH6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ 6
Kind of package: tube
Gate charge: 92nC
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 100W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ 6
Kind of package: tube
Gate charge: 92nC
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 100W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 239 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.49 EUR |
32+ | 2.26 EUR |
34+ | 2.13 EUR |
120+ | 2.1 EUR |
150+ | 2.06 EUR |
IKW15N120H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ 3
Kind of package: tube
Gate charge: 75nC
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 217W
Pulsed collector current: 60A
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ 3
Kind of package: tube
Gate charge: 75nC
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 217W
Pulsed collector current: 60A
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.45 EUR |
14+ | 5.11 EUR |
30+ | 4.2 EUR |
IKW15N120T2FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ 2
Kind of package: tube
Turn-on time: 57ns
Gate charge: 93nC
Turn-off time: 457ns
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 235W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ 2
Kind of package: tube
Turn-on time: 57ns
Gate charge: 93nC
Turn-off time: 457ns
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 235W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.84 EUR |
17+ | 4.29 EUR |
18+ | 4.06 EUR |
120+ | 3.98 EUR |
IKW20N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 28ns
Turn-off time: 205ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 28ns
Turn-off time: 205ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.12 EUR |
19+ | 3.88 EUR |
21+ | 3.47 EUR |
22+ | 3.27 EUR |
30+ | 3.16 EUR |
IKW20N60TFKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 36ns
Turn-off time: 299ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 36ns
Turn-off time: 299ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 209 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.23 EUR |
36+ | 2.03 EUR |
38+ | 1.92 EUR |
IKW25N120CS7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 125W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 38ns
Gate charge: 150nC
Turn-off time: 490ns
Collector current: 37A
Gate-emitter voltage: ±20V
Power dissipation: 125W
Pulsed collector current: 75A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 125W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 38ns
Gate charge: 150nC
Turn-off time: 490ns
Collector current: 37A
Gate-emitter voltage: ±20V
Power dissipation: 125W
Pulsed collector current: 75A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKW25N120H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 115nC
Collector current: 50A
Gate-emitter voltage: ±20V
Power dissipation: 326W
Pulsed collector current: 100A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 3
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 115nC
Collector current: 50A
Gate-emitter voltage: ±20V
Power dissipation: 326W
Pulsed collector current: 100A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.33 EUR |
17+ | 4.36 EUR |
18+ | 4.13 EUR |
IKW25N120T2FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Collector current: 50A
Gate-emitter voltage: ±20V
Power dissipation: 349W
Pulsed collector current: 100A
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Collector current: 50A
Gate-emitter voltage: ±20V
Power dissipation: 349W
Pulsed collector current: 100A
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 53 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.18 EUR |
15+ | 5.02 EUR |
16+ | 4.73 EUR |
IKW25T120FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 190W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 190W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.92 EUR |
12+ | 6.33 EUR |
15+ | 4.96 EUR |
16+ | 4.69 EUR |
120+ | 4.62 EUR |
IKW30N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 94W
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 165nC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 94W
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 165nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 224 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.56 EUR |
30+ | 2.4 EUR |
32+ | 2.27 EUR |
IKW30N60TFKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 39A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 39A
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 44ns
Gate charge: 167nC
Turn-off time: 0.3µs
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 39A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 39A
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 44ns
Gate charge: 167nC
Turn-off time: 0.3µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKW30N65EL5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
IKW30N65EL5 THT IGBT transistors
IKW30N65EL5 THT IGBT transistors
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.3 EUR |
9+ | 7.95 EUR |
30+ | 5.81 EUR |
IKW30N65ES5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
IKW30N65ES5XKSA1 THT IGBT transistors
IKW30N65ES5XKSA1 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKW30N65H5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
IKW30N65H5 THT IGBT transistors
IKW30N65H5 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKW30N65WR5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
IKW30N65WR5 THT IGBT transistors
IKW30N65WR5 THT IGBT transistors
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.35 EUR |
17+ | 4.2 EUR |
30+ | 3.82 EUR |
IKW40N120CS6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.42 EUR |
16+ | 4.72 EUR |
17+ | 4.46 EUR |
120+ | 4.29 EUR |
IKW40N120CS7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 179W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.5µs
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 179W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.5µs
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKW40N120H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 297 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.18 EUR |
12+ | 5.99 EUR |
IKW40N120T2FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 165A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 165A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 59 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.61 EUR |
10+ | 7.31 EUR |
11+ | 6.91 EUR |
240+ | 6.65 EUR |
IKW40N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 153W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 218ns
Collector current: 40A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 153W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 218ns
Collector current: 40A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 184 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.66 EUR |
17+ | 4.22 EUR |
30+ | 4.1 EUR |
IKW40N65ES5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKW40N65F5FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 11.91 EUR |
10+ | 7.15 EUR |
30+ | 3.09 EUR |
IKW40N65H5FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.41 EUR |
23+ | 3.25 EUR |
24+ | 3.07 EUR |
60+ | 2.95 EUR |
IKW40N65WR5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 448ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 448ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.69 EUR |
26+ | 2.79 EUR |
28+ | 2.65 EUR |
30+ | 2.6 EUR |
120+ | 2.55 EUR |
IKW40T120FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 700ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 700ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
3+ | 23.84 EUR |
8+ | 8.94 EUR |
30+ | 5.59 EUR |
120+ | 5.45 EUR |
IKW50N60DTPXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 159.6W
Case: TO247-3
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 233ns
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 61A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 159.6W
Case: TO247-3
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 233ns
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 61A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 207 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.25 EUR |
32+ | 2.25 EUR |
34+ | 2.12 EUR |
IKW50N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 297ns
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 297ns
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 356 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.71 EUR |
19+ | 3.93 EUR |
20+ | 3.72 EUR |
IKW50N60TFKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 50A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 50A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 320 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.34 EUR |
15+ | 4.78 EUR |
IKW50N65EH5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 138W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 54ns
Turn-off time: 207ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 138W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 54ns
Turn-off time: 207ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKW50N65ES5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 47ns
Turn-off time: 161ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 47ns
Turn-off time: 161ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKW50N65F5FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 241 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.4 EUR |
28+ | 2.63 EUR |
29+ | 2.49 EUR |
IKW50N65H5FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 179 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.65 EUR |
18+ | 4.09 EUR |
19+ | 3.86 EUR |
30+ | 3.72 EUR |
IKW50N65WR5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 79ns
Turn-off time: 420ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 79ns
Turn-off time: 420ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 91 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.26 EUR |
15+ | 4.82 EUR |
16+ | 4.56 EUR |
IKW60N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Collector current: 60A
Pulsed collector current: 180A
Manufacturer series: H3
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 64ns
Turn-off time: 314ns
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Collector current: 60A
Pulsed collector current: 180A
Manufacturer series: H3
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 64ns
Turn-off time: 314ns
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKW75N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 85ns
Turn-off time: 332ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 85ns
Turn-off time: 332ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKW75N60TFKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 69ns
Turn-off time: 401ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 69ns
Turn-off time: 401ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.08 EUR |
10+ | 7.35 EUR |
30+ | 7.15 EUR |
IKW75N65EH5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 160nC
Turn-on time: 61ns
Turn-off time: 215ns
Power dissipation: 198W
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 160nC
Turn-on time: 61ns
Turn-off time: 215ns
Power dissipation: 198W
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKW75N65ES5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 164nC
Turn-on time: 86ns
Turn-off time: 185ns
Power dissipation: 197W
Collector current: 80A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 164nC
Turn-on time: 86ns
Turn-off time: 185ns
Power dissipation: 197W
Collector current: 80A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.15 EUR |
IKY40N120CH3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Turn-off time: 306ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 59ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Turn-off time: 306ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 59ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKY40N120CS6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Turn-off time: 342ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Turn-off time: 342ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKY50N120CH3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
IKY50N120CH3XKSA1 THT IGBT transistors
IKY50N120CH3XKSA1 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKY75N120CH3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247PLUS-4; H3
Type of transistor: IGBT
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247PLUS-4
Mounting: THT
Kind of package: tube
Turn-on time: 70ns
Gate charge: 0.37µC
Turn-off time: 335ns
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 256W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247PLUS-4; H3
Type of transistor: IGBT
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247PLUS-4
Mounting: THT
Kind of package: tube
Turn-on time: 70ns
Gate charge: 0.37µC
Turn-off time: 335ns
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 256W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKY75N120CS6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247PLUS-4
Mounting: THT
Kind of package: tube
Gate charge: 530nC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 440W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247PLUS-4
Mounting: THT
Kind of package: tube
Gate charge: 530nC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 440W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKZ50N65ES5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 58ns
Turn-off time: 326ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 58ns
Turn-off time: 326ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKZ50N65NH5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 30ns
Turn-off time: 275ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 30ns
Turn-off time: 275ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKZ75N65EL5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 268W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-4
Mounting: THT
Kind of package: tube
Gate charge: 436nC
Turn-on time: 143ns
Turn-off time: 325ns
Power dissipation: 268W
Collector current: 100A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 268W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-4
Mounting: THT
Kind of package: tube
Gate charge: 436nC
Turn-on time: 143ns
Turn-off time: 325ns
Power dissipation: 268W
Collector current: 100A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKZ75N65ES5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-4
Mounting: THT
Kind of package: tube
Gate charge: 164nC
Turn-on time: 71ns
Turn-off time: 427ns
Power dissipation: 197W
Collector current: 80A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-4
Mounting: THT
Kind of package: tube
Gate charge: 164nC
Turn-on time: 71ns
Turn-off time: 427ns
Power dissipation: 197W
Collector current: 80A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
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ILD8150EXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
ILD8150EXUMA1 LED drivers
ILD8150EXUMA1 LED drivers
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH