Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (148842) > Seite 1279 nach 2481
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IRFP064NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 98A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 98A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Gate charge: 113.3nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 751 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP1405PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 110A; 310W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 310W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 32 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP140NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 27A; 94W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 27A Power dissipation: 94W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: THT Gate charge: 62.7nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP150NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Power dissipation: 160W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Kind of channel: enhancement Technology: HEXFET® Gate charge: 110nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 789 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP250MPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 30A Power dissipation: 214W Case: TO247AD Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: THT Kind of channel: enhancement Gate charge: 123nC Technology: HEXFET® Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 248 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP250NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 30A Power dissipation: 214W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: THT Kind of channel: enhancement Gate charge: 123nC Technology: HEXFET® Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 195 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP260MPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 35A Power dissipation: 300W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Gate charge: 234nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 205 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP260NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 35A Power dissipation: 300W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Gate charge: 234nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1411 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP2907PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 209A; 330W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 209A Power dissipation: 330W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 410nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 111 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFP3006PBF | INFINEON TECHNOLOGIES |
IRFP3006PBF THT N channel transistors |
auf Bestellung 67 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFP3077PBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 200A; TO247AC Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Case: TO247AC Kind of package: tube Polarisation: unipolar Drain-source voltage: 75V Drain current: 200A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 203 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP3206PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 200A; 280W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 200A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFP3415PBF | INFINEON TECHNOLOGIES |
IRFP3415PBF THT N channel transistors |
auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP3703PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 210A Power dissipation: 230W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: THT Gate charge: 209nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFP3710PBF | INFINEON TECHNOLOGIES |
IRFP3710PBF THT N channel transistors |
auf Bestellung 111 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP4110PBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFP4137PBF | INFINEON TECHNOLOGIES |
IRFP4137PBF THT N channel transistors |
auf Bestellung 51 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFP4229PBF | INFINEON TECHNOLOGIES |
IRFP4229PBF THT N channel transistors |
auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFP4321PBF | INFINEON TECHNOLOGIES |
IRFP4321PBF THT N channel transistors |
auf Bestellung 68 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP4368PBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 350A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: THT Gate charge: 380nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 32 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP4468PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 290A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 2.6mΩ Gate-source voltage: ±20V Gate charge: 360nC Technology: HEXFET® Power dissipation: 520W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP4568PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 171A; 517W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 171A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 5.9mΩ Gate-source voltage: ±30V Gate charge: 151nC Technology: HEXFET® Power dissipation: 517W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFP4668PBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 130A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 9.7mΩ Mounting: THT Gate charge: 161nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP4768PBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 66A Pulsed drain current: 370A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFP7430PBF | INFINEON TECHNOLOGIES |
IRFP7430PBF THT N channel transistors |
auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFP7530PBF | INFINEON TECHNOLOGIES |
IRFP7530PBF THT N channel transistors |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP7537PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 172A; 230W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 172A Power dissipation: 230W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Gate charge: 142nC Kind of package: tube Kind of channel: enhancement Trade name: StrongIRFET Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFP90N20DPBF | INFINEON TECHNOLOGIES |
IRFP90N20DPBF THT N channel transistors |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFP9140NPBF | INFINEON TECHNOLOGIES |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -21A; 120W; TO247AC Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -21A Power dissipation: 120W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.117Ω Mounting: THT Kind of channel: enhancement Gate charge: 64.7nC Technology: HEXFET® Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 560 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR024NTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 16A Power dissipation: 38W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8003 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR1205TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK Kind of package: reel Case: DPAK Kind of channel: enhancement Technology: HEXFET® Type of transistor: N-MOSFET Mounting: SMD Drain current: 37A Power dissipation: 107W Drain-source voltage: 55V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1406 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR120NTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.1A Power dissipation: 39W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 432 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR220NTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5A Power dissipation: 43W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1888 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR3710ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 56A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1561 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR3806TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 43A Power dissipation: 71W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1521 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR3910TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1592 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR4104TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 119A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1099 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR4620TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 24A Power dissipation: 144W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2600 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR5305TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -28A Power dissipation: 89W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2745 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR5305TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -28A Power dissipation: 89W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7292 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFR5410TRPBF | INFINEON TECHNOLOGIES |
IRFR5410TRPBF SMD P channel transistors |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR5505TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -18A Power dissipation: 57W Case: DPAK On-state resistance: 0.11Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1715 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR6215TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -13A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1103 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR7546TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 71A; 99W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 71A Power dissipation: 99W Case: DPAK On-state resistance: 7.9mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1277 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR9024NTRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK Kind of package: reel Case: DPAK Kind of channel: enhancement Mounting: SMD Technology: HEXFET® Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -55V Drain current: -11A Power dissipation: 38W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5769 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFR9120NTRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -6.5A Power dissipation: 39W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 313 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFS3306TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 110A; Idm: 620A; 230W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 110A Power dissipation: 230W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Kind of channel: enhancement Technology: HEXFET® Pulsed drain current: 620A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 376 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFS4127TRLPBF | INFINEON TECHNOLOGIES |
IRFS4127TRLPBF SMD N channel transistors |
auf Bestellung 766 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFS4321TRLPBF | INFINEON TECHNOLOGIES |
IRFS4321TRLPBF SMD N channel transistors |
auf Bestellung 276 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFS7437TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 230W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 610 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFS7530TRL7PP | INFINEON TECHNOLOGIES |
IRFS7530TRL7PP SMD N channel transistors |
auf Bestellung 431 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFS7730TRLPBF | INFINEON TECHNOLOGIES |
IRFS7730TRLPBF SMD N channel transistors |
auf Bestellung 517 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFS7734TRLPBF | INFINEON TECHNOLOGIES |
IRFS7734TRLPBF SMD N channel transistors |
auf Bestellung 732 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFSL4010PBF | INFINEON TECHNOLOGIES |
IRFSL4010PBF THT N channel transistors |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFSL7437PBF | INFINEON TECHNOLOGIES |
IRFSL7437PBF THT N channel transistors |
auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFTS8342TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.2A Power dissipation: 2W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1015 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFTS9342TRPBF | INFINEON TECHNOLOGIES |
IRFTS9342TRPBF SMD P channel transistors |
auf Bestellung 6930 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFU120NPBF | INFINEON TECHNOLOGIES |
IRFU120NPBF THT N channel transistors |
auf Bestellung 2652 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFU3910PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK Kind of channel: enhancement Mounting: THT Technology: HEXFET® Case: IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Gate charge: 29.3nC On-state resistance: 0.115Ω Power dissipation: 52W Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 314 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFU4510PBF | INFINEON TECHNOLOGIES |
IRFU4510PBF THT N channel transistors |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFP064NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 98A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 98A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 98A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 98A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 751 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.52 EUR |
| 32+ | 2.26 EUR |
| 36+ | 2.02 EUR |
| 40+ | 1.83 EUR |
| 45+ | 1.6 EUR |
| 55+ | 1.32 EUR |
| 100+ | 1.16 EUR |
| IRFP1405PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.22 EUR |
| 26+ | 2.79 EUR |
| IRFP140NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 27A; 94W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 27A
Power dissipation: 94W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 27A; 94W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 27A
Power dissipation: 94W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.3 EUR |
| 46+ | 1.59 EUR |
| 50+ | 1.46 EUR |
| 53+ | 1.37 EUR |
| 100+ | 1.29 EUR |
| 250+ | 1.17 EUR |
| 400+ | 1.1 EUR |
| IRFP150NPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 110nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 110nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 789 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.04 EUR |
| 45+ | 1.62 EUR |
| 49+ | 1.49 EUR |
| 52+ | 1.4 EUR |
| 100+ | 1.3 EUR |
| 250+ | 1.19 EUR |
| 400+ | 1.12 EUR |
| IRFP250MPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AD
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 123nC
Technology: HEXFET®
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AD
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 123nC
Technology: HEXFET®
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 248 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.95 EUR |
| 38+ | 1.92 EUR |
| 47+ | 1.53 EUR |
| 55+ | 1.32 EUR |
| 100+ | 1.22 EUR |
| IRFP250NPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 123nC
Technology: HEXFET®
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 123nC
Technology: HEXFET®
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 195 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 2.99 EUR |
| 37+ | 1.96 EUR |
| 41+ | 1.77 EUR |
| 50+ | 1.64 EUR |
| 100+ | 1.53 EUR |
| 400+ | 1.32 EUR |
| 500+ | 1.3 EUR |
| IRFP260MPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 205 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.59 EUR |
| 33+ | 2.2 EUR |
| 36+ | 2.03 EUR |
| 40+ | 1.82 EUR |
| 50+ | 1.66 EUR |
| 100+ | 1.52 EUR |
| 250+ | 1.39 EUR |
| IRFP260NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1411 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.28 EUR |
| 27+ | 2.67 EUR |
| 30+ | 2.43 EUR |
| 50+ | 2.26 EUR |
| 100+ | 2.07 EUR |
| 250+ | 1.89 EUR |
| 400+ | 1.79 EUR |
| IRFP2907PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 209A; 330W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 209A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 410nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 209A; 330W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 209A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 410nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 111 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.26 EUR |
| 25+ | 2.95 EUR |
| 100+ | 2.77 EUR |
| 500+ | 2.69 EUR |
| IRFP3006PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFP3006PBF THT N channel transistors
IRFP3006PBF THT N channel transistors
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.59 EUR |
| 21+ | 3.53 EUR |
| 22+ | 3.35 EUR |
| 100+ | 3.27 EUR |
| IRFP3077PBFXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; TO247AC
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO247AC
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; TO247AC
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO247AC
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 203 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.33 EUR |
| 24+ | 2.99 EUR |
| 28+ | 2.65 EUR |
| 30+ | 2.46 EUR |
| 100+ | 2.3 EUR |
| 400+ | 2.22 EUR |
| IRFP3206PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 280W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 280W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 35.75 EUR |
| 10+ | 7.15 EUR |
| 25+ | 2.86 EUR |
| 50+ | 2 EUR |
| 100+ | 1.82 EUR |
| 125+ | 1.77 EUR |
| IRFP3415PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFP3415PBF THT N channel transistors
IRFP3415PBF THT N channel transistors
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.37 EUR |
| 37+ | 1.94 EUR |
| 40+ | 1.83 EUR |
| IRFP3703PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 10+ | 7.15 EUR |
| 25+ | 2.86 EUR |
| IRFP3710PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFP3710PBF THT N channel transistors
IRFP3710PBF THT N channel transistors
auf Bestellung 111 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.07 EUR |
| 28+ | 2.56 EUR |
| 30+ | 2.42 EUR |
| IRFP4110PBFXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.22 EUR |
| 18+ | 3.98 EUR |
| 25+ | 2.86 EUR |
| 100+ | 2.06 EUR |
| 250+ | 1.8 EUR |
| 400+ | 1.79 EUR |
| IRFP4137PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFP4137PBF THT N channel transistors
IRFP4137PBF THT N channel transistors
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.71 EUR |
| 20+ | 3.76 EUR |
| 21+ | 3.56 EUR |
| IRFP4229PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFP4229PBF THT N channel transistors
IRFP4229PBF THT N channel transistors
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.86 EUR |
| 32+ | 2.26 EUR |
| 34+ | 2.13 EUR |
| 750+ | 2.09 EUR |
| IRFP4321PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFP4321PBF THT N channel transistors
IRFP4321PBF THT N channel transistors
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.22 EUR |
| 28+ | 2.59 EUR |
| 30+ | 2.45 EUR |
| IRFP4368PBFXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.21 EUR |
| 25+ | 4.66 EUR |
| 50+ | 4.38 EUR |
| IRFP4468PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Gate charge: 360nC
Technology: HEXFET®
Power dissipation: 520W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Gate charge: 360nC
Technology: HEXFET®
Power dissipation: 520W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.35 EUR |
| 14+ | 5.18 EUR |
| 25+ | 4.09 EUR |
| 50+ | 3.36 EUR |
| 100+ | 3.09 EUR |
| IRFP4568PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 5.9mΩ
Gate-source voltage: ±30V
Gate charge: 151nC
Technology: HEXFET®
Power dissipation: 517W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 5.9mΩ
Gate-source voltage: ±30V
Gate charge: 151nC
Technology: HEXFET®
Power dissipation: 517W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.22 EUR |
| 25+ | 4.49 EUR |
| 50+ | 3.95 EUR |
| 100+ | 3.36 EUR |
| IRFP4668PBFXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 9.7mΩ
Mounting: THT
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 9.7mΩ
Mounting: THT
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.45 EUR |
| 16+ | 4.68 EUR |
| 20+ | 3.58 EUR |
| 25+ | 2.92 EUR |
| IRFP4768PBFXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.86 EUR |
| 20+ | 3.63 EUR |
| 25+ | 3.3 EUR |
| 100+ | 2.9 EUR |
| IRFP7430PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFP7430PBF THT N channel transistors
IRFP7430PBF THT N channel transistors
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.26 EUR |
| 28+ | 2.6 EUR |
| 35+ | 2.06 EUR |
| 37+ | 1.94 EUR |
| IRFP7530PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFP7530PBF THT N channel transistors
IRFP7530PBF THT N channel transistors
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.48 EUR |
| 21+ | 3.52 EUR |
| 28+ | 2.56 EUR |
| 30+ | 2.42 EUR |
| IRFP7537PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 172A; 230W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 172A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 172A; 230W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 172A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.86 EUR |
| IRFP90N20DPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFP90N20DPBF THT N channel transistors
IRFP90N20DPBF THT N channel transistors
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 8.94 EUR |
| 15+ | 4.76 EUR |
| 400+ | 3.29 EUR |
| IRFP9140NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -21A; 120W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -21A
Power dissipation: 120W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 64.7nC
Technology: HEXFET®
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -21A; 120W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -21A
Power dissipation: 120W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 64.7nC
Technology: HEXFET®
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 560 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.8 EUR |
| 44+ | 1.64 EUR |
| 48+ | 1.52 EUR |
| 51+ | 1.42 EUR |
| 100+ | 1.32 EUR |
| 125+ | 1.27 EUR |
| 250+ | 1.17 EUR |
| IRFR024NTRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8003 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 166+ | 0.43 EUR |
| 173+ | 0.41 EUR |
| 181+ | 0.4 EUR |
| 250+ | 0.38 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.34 EUR |
| IRFR1205TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 37A
Power dissipation: 107W
Drain-source voltage: 55V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 37A
Power dissipation: 107W
Drain-source voltage: 55V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1406 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 151+ | 0.47 EUR |
| 160+ | 0.45 EUR |
| 175+ | 0.41 EUR |
| 188+ | 0.38 EUR |
| 204+ | 0.35 EUR |
| 500+ | 0.32 EUR |
| IRFR120NTRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 432 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.26 EUR |
| 108+ | 0.67 EUR |
| 135+ | 0.53 EUR |
| 250+ | 0.48 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.41 EUR |
| 2000+ | 0.38 EUR |
| IRFR220NTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 43W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 43W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1888 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.22 EUR |
| 74+ | 0.98 EUR |
| 84+ | 0.86 EUR |
| 117+ | 0.62 EUR |
| 133+ | 0.54 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| IRFR3710ZTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1561 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.97 EUR |
| 44+ | 1.65 EUR |
| 49+ | 1.48 EUR |
| 57+ | 1.26 EUR |
| 65+ | 1.12 EUR |
| 100+ | 1 EUR |
| 250+ | 0.87 EUR |
| IRFR3806TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1521 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.4 EUR |
| 67+ | 1.07 EUR |
| 90+ | 0.8 EUR |
| 102+ | 0.71 EUR |
| 250+ | 0.61 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.5 EUR |
| IRFR3910TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1592 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 113+ | 0.63 EUR |
| 120+ | 0.6 EUR |
| 125+ | 0.59 EUR |
| 250+ | 0.55 EUR |
| 500+ | 0.54 EUR |
| IRFR4104TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1099 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 77+ | 0.93 EUR |
| IRFR4620TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2600 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.62 EUR |
| 39+ | 1.84 EUR |
| 47+ | 1.54 EUR |
| 53+ | 1.36 EUR |
| 100+ | 1.2 EUR |
| 250+ | 1.04 EUR |
| 500+ | 0.94 EUR |
| IRFR5305TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2745 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 54+ | 1.33 EUR |
| 73+ | 0.99 EUR |
| 83+ | 0.86 EUR |
| 114+ | 0.63 EUR |
| 200+ | 0.56 EUR |
| 250+ | 0.55 EUR |
| 500+ | 0.5 EUR |
| IRFR5305TRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7292 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 83+ | 0.87 EUR |
| 94+ | 0.77 EUR |
| 115+ | 0.62 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.4 EUR |
| IRFR5410TRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
IRFR5410TRPBF SMD P channel transistors
IRFR5410TRPBF SMD P channel transistors
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 1.85 EUR |
| 111+ | 0.65 EUR |
| 117+ | 0.61 EUR |
| IRFR5505TRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1715 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.56 EUR |
| 86+ | 0.84 EUR |
| 93+ | 0.77 EUR |
| 106+ | 0.68 EUR |
| 250+ | 0.62 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.53 EUR |
| IRFR6215TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1103 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.63 EUR |
| 55+ | 1.31 EUR |
| 64+ | 1.13 EUR |
| 100+ | 0.89 EUR |
| 250+ | 0.76 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.63 EUR |
| IRFR7546TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; 99W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 71A
Power dissipation: 99W
Case: DPAK
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; 99W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 71A
Power dissipation: 99W
Case: DPAK
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1277 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 81+ | 0.89 EUR |
| 120+ | 0.6 EUR |
| 250+ | 0.52 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.44 EUR |
| IRFR9024NTRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5769 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.3 EUR |
| 89+ | 0.81 EUR |
| 127+ | 0.56 EUR |
| 200+ | 0.49 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.33 EUR |
| IRFR9120NTRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 313 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.52 EUR |
| 73+ | 0.99 EUR |
| 99+ | 0.72 EUR |
| 112+ | 0.64 EUR |
| 200+ | 0.57 EUR |
| 250+ | 0.55 EUR |
| 500+ | 0.5 EUR |
| IRFS3306TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; Idm: 620A; 230W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Pulsed drain current: 620A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; Idm: 620A; 230W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Pulsed drain current: 620A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 376 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.06 EUR |
| 25+ | 2.87 EUR |
| 30+ | 2.42 EUR |
| 33+ | 2.23 EUR |
| 50+ | 1.96 EUR |
| 100+ | 1.77 EUR |
| 200+ | 1.64 EUR |
| IRFS4127TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFS4127TRLPBF SMD N channel transistors
IRFS4127TRLPBF SMD N channel transistors
auf Bestellung 766 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.45 EUR |
| 37+ | 1.96 EUR |
| 39+ | 1.86 EUR |
| 500+ | 1.82 EUR |
| IRFS4321TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFS4321TRLPBF SMD N channel transistors
IRFS4321TRLPBF SMD N channel transistors
auf Bestellung 276 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.69 EUR |
| 40+ | 1.82 EUR |
| 42+ | 1.72 EUR |
| 1600+ | 1.67 EUR |
| IRFS7437TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 610 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.1 EUR |
| IRFS7530TRL7PP |
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Hersteller: INFINEON TECHNOLOGIES
IRFS7530TRL7PP SMD N channel transistors
IRFS7530TRL7PP SMD N channel transistors
auf Bestellung 431 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.7 EUR |
| 32+ | 2.3 EUR |
| 33+ | 2.17 EUR |
| IRFS7730TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFS7730TRLPBF SMD N channel transistors
IRFS7730TRLPBF SMD N channel transistors
auf Bestellung 517 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.88 EUR |
| 38+ | 1.92 EUR |
| 40+ | 1.8 EUR |
| 1600+ | 1.77 EUR |
| IRFS7734TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFS7734TRLPBF SMD N channel transistors
IRFS7734TRLPBF SMD N channel transistors
auf Bestellung 732 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 45+ | 1.62 EUR |
| 61+ | 1.19 EUR |
| 65+ | 1.12 EUR |
| IRFSL4010PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
IRFSL4010PBF THT N channel transistors
IRFSL4010PBF THT N channel transistors
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 7.95 EUR |
| 20+ | 3.58 EUR |
| 1000+ | 2.37 EUR |
| IRFSL7437PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFSL7437PBF THT N channel transistors
IRFSL7437PBF THT N channel transistors
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.87 EUR |
| 29+ | 2.46 EUR |
| 39+ | 1.83 EUR |
| 250+ | 1.16 EUR |
| IRFTS8342TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1015 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 211+ | 0.34 EUR |
| 240+ | 0.3 EUR |
| 355+ | 0.2 EUR |
| 404+ | 0.18 EUR |
| 500+ | 0.16 EUR |
| IRFTS9342TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFTS9342TRPBF SMD P channel transistors
IRFTS9342TRPBF SMD P channel transistors
auf Bestellung 6930 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 96+ | 0.75 EUR |
| 424+ | 0.17 EUR |
| 447+ | 0.16 EUR |
| IRFU120NPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFU120NPBF THT N channel transistors
IRFU120NPBF THT N channel transistors
auf Bestellung 2652 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.11 EUR |
| 122+ | 0.59 EUR |
| 129+ | 0.56 EUR |
| 132+ | 0.54 EUR |
| IRFU3910PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Case: IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Gate charge: 29.3nC
On-state resistance: 0.115Ω
Power dissipation: 52W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Case: IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Gate charge: 29.3nC
On-state resistance: 0.115Ω
Power dissipation: 52W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 314 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 150+ | 0.57 EUR |
| 525+ | 0.55 EUR |
| IRFU4510PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFU4510PBF THT N channel transistors
IRFU4510PBF THT N channel transistors
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 8.94 EUR |
| 16+ | 4.46 EUR |
| 44+ | 1.63 EUR |
| 450+ | 1.07 EUR |














