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IHW30N65R5XKSA1 INFINEON TECHNOLOGIES Infineon-IHW30N65R5-DS-v02_01-EN.pdf?fileId=5546d4624d6fc3d5014db954d0454713 IHW30N65R5 THT IGBT transistors
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IHW40N120R5XKSA1 IHW40N120R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCA5EF2915F820&compId=IHW40N120R5.pdf?ci_sign=ff87a8c36a7c399a49fec60936b41c23e7a4c9aa Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
auf Bestellung 265 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.53 EUR
16+4.75 EUR
21+3.53 EUR
22+3.35 EUR
30+3.22 EUR
Mindestbestellmenge: 13
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IHW40N135R5XKSA1 IHW40N135R5XKSA1 INFINEON TECHNOLOGIES Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 183 Stücke:
Lieferzeit 7-14 Tag (e)
12+5.96 EUR
14+5.29 EUR
20+3.76 EUR
21+3.55 EUR
30+3.47 EUR
60+3.42 EUR
Mindestbestellmenge: 12
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IHW40N60RFKSA1 IHW40N60RFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCBDE92FDCF820&compId=IHW40N60RF.pdf?ci_sign=82767ed05928b8e96282a1f045c5bab220a23d94 Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 40A; 152W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 152W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-off time: 217ns
Collector current: 40A
Gate-emitter voltage: ±20V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
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IHW40N65R5XKSA1 IHW40N65R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCF82A829F1820&compId=IHW40N65R5.pdf?ci_sign=f2b3df89ecc5884a555765950a699d043f13b658 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 152W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 152W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 273ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
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IHW40N65R6XKSA1 IHW40N65R6XKSA1 INFINEON TECHNOLOGIES Infineon-IHW40N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e19dad7275 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.29 EUR
26+2.82 EUR
27+2.66 EUR
30+2.63 EUR
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IHW50N65R5XKSA1 IHW50N65R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCFFAFB3183820&compId=IHW50N65R5.pdf?ci_sign=79609e9ed288e8af523721c936628f411dd72516 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Turn-on time: 50ns
Turn-off time: 218ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 186 Stücke:
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15+4.85 EUR
16+4.65 EUR
17+4.39 EUR
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IKA06N60TXKSA1 IKA06N60TXKSA1 INFINEON TECHNOLOGIES IKA06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42868603dee Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6.2A; 28W; TO220FP
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6.2A
Power dissipation: 28W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
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IKA10N60TXKSA1 IKA10N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD0C97D3F67820&compId=IKA10N60T.pdf?ci_sign=fadea912e4a2c8f589f65f7cdedf1af4db1bc744 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7.2A; 30W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 30W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 67nC
Turn-on time: 20ns
Turn-off time: 250ns
Collector current: 7.2A
Anzahl je Verpackung: 1 Stücke
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IKA10N65ET6XKSA2 IKA10N65ET6XKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE895EFAAFFDA7933D6&compId=IKA10N65ET6.pdf?ci_sign=357318a9289c8383d9971a53bdf9a9a379462c13 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 20W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 42.5A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: T6
Gate charge: 27nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 103 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.93 EUR
41+1.77 EUR
49+1.47 EUR
52+1.4 EUR
100+1.39 EUR
500+1.34 EUR
Mindestbestellmenge: 38
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IKA15N60TXKSA1 IKA15N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD1E877C847820&compId=IKA15N60T.pdf?ci_sign=ce907b1e3bd538123e3a5020ae0c7b1b51be7942 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10.6A; 35.7W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 35.7W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector current: 10.6A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 28ns
Turn-off time: 238ns
Anzahl je Verpackung: 1 Stücke
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IKA15N65ET6XKSA2 IKA15N65ET6XKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE92E3A7A2ABEFC0D5&compId=IKA15N65ET6.pdf?ci_sign=a5d0997715c8dfdacffa9de02f1033ffc16b814e Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 11A; 22W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 22W
Case: TO220FP
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 57.5A
Collector-emitter voltage: 650V
Turn-on time: 50ns
Turn-off time: 202ns
Collector current: 11A
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: T6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
10+7.15 EUR
11+6.51 EUR
29+2.46 EUR
250+1.49 EUR
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IKB06N60TATMA1 IKB06N60TATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD343675457820&compId=IKB06N60T.pdf?ci_sign=dc014062b346c713605c9ed411198b67f0f4b331 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
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IKB10N60TATMA1 IKB10N60TATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD3C93FDBDF820&compId=IKB10N60T.pdf?ci_sign=ac3f6735529e5b82d20ec8c5b3cf138128615c0e Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 62nC
Turn-on time: 20ns
Turn-off time: 253ns
Collector current: 18A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 659 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.4 EUR
39+1.87 EUR
44+1.66 EUR
46+1.57 EUR
50+1.5 EUR
Mindestbestellmenge: 30
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IKB15N60TATMA1 IKB15N60TATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD41F72CB29820&compId=IKB15N60T.pdf?ci_sign=9b743b6df9c5530ebc7f8eee8c1770ec9a429f91 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Collector current: 23A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 28ns
Turn-off time: 238ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 812 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.13 EUR
27+2.66 EUR
28+2.62 EUR
30+2.39 EUR
31+2.37 EUR
Mindestbestellmenge: 23
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IKB15N65EH5ATMA1 IKB15N65EH5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD4741CB2AD820&compId=IKB15N65EH5.pdf?ci_sign=f41aca0c31e21ad8910ab653a5cd8be8dccade59 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 38nC
Turn-on time: 33ns
Turn-off time: 172ns
Power dissipation: 52.5W
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKB20N60H3ATMA1 IKB20N60H3ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD4BEE48ED3820&compId=IKB20N60H3.pdf?ci_sign=6e59697a1b11c9314964694537e7c76c6542e9f8 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 36ns
Turn-off time: 205ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKB20N60TATMA1 IKB20N60TATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD52D9F6417820&compId=IKB20N60T.pdf?ci_sign=c235205cf7eddca1fd52b37a7c3b186c20f8ddcc Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 166W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 28A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
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IKB20N65EH5ATMA1 IKB20N65EH5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD5B574119B820&compId=IKB20N65EH5.pdf?ci_sign=84117916d2af3cf46356ecf8de4185ed193d681c Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Gate charge: 48nC
Turn-off time: 183ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 919 Stücke:
Lieferzeit 7-14 Tag (e)
18+3.98 EUR
25+2.92 EUR
26+2.76 EUR
100+2.65 EUR
Mindestbestellmenge: 18
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IKB30N65EH5ATMA1 INFINEON TECHNOLOGIES Infineon-IKB30N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd134705491a IKB30N65EH5ATMA1 SMD IGBT transistors
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IKB30N65ES5ATMA1 INFINEON TECHNOLOGIES Infineon-IKB30N65ES5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd135b40491d IKB30N65ES5ATMA1 SMD IGBT transistors
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IKB40N65EF5ATMA1 IKB40N65EF5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD7954CB00F820&compId=IKB40N65EF5.pdf?ci_sign=f62162fca50ae64d7b1994688492f8e798f89f56 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 56ns
Turn-off time: 212ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKB40N65EH5ATMA1 IKB40N65EH5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD7FC31BBF5820&compId=IKB40N65EH5.pdf?ci_sign=ae23714c68ac95b418155dee932388aa2c4eed0f Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 34ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKB40N65ES5ATMA1 IKB40N65ES5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD86BB011BB820&compId=IKB40N65ES5.pdf?ci_sign=772e35322d60b6684f9f2ae2275e07e31bb27b1c Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKCM10H60GAXKMA1 IKCM10H60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACDC852B5593D7&compId=IKCM10H60GA.pdf?ci_sign=4b5a98fd60881639d3b88e907a50e2961c030923 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 23.1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.3 EUR
10+8.87 EUR
14+8.62 EUR
Mindestbestellmenge: 5
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IKCM10L60GAXKMA1 IKCM10L60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACE25CCB96B3D7&compId=IKCM10L60GA.pdf?ci_sign=9cbc71647cd20c3c843610d6c4b7ffd632abf6e7 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKCM15H60GAXKMA2 IKCM15H60GAXKMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACE685ADE5B3D7&compId=IKCM15H60GA.pdf?ci_sign=b05a44ba28f3534652439353305f4e3dde92d0c0 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.62 EUR
8+10.02 EUR
14+9.84 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IKCM15L60GDXKMA1 IKCM15L60GDXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACEA79D16AF3D7&compId=IKCM15L60GD.pdf?ci_sign=398345fa98c1b63f7ad382e4628995eafd40f542 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 58.6W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKCM20L60GAXKMA1 IKCM20L60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACEDFAB46113D7&compId=IKCM20L60GA.pdf?ci_sign=dd653c89070a6b043f926e264dac78d345231d50 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Mounting: THT
Case: PG-MDIP24
Integrated circuit features: integrated bootstrap functionality
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Output current: -20...20A
Type of integrated circuit: driver
Power dissipation: 29.2W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKCM30F60GAXKMA1 IKCM30F60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCD5B09CEE67DE28&compId=IKCM30F60GA.pdf?ci_sign=783f1af8ac5ce8035a854959701563b15dac9467 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Operating temperature: -40...125°C
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Output current: -20...20A
Operating voltage: 13.5...18.5/0...400V DC
Power dissipation: 30.3W
Voltage class: 600V
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Protection: anti-overload OPP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
3+24.42 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IKD03N60RFATMA1 IKD03N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD8E80508A9820&compId=IKD03N60RF.pdf?ci_sign=68d6aad35e656a07d48ac99a74b3916ffc4e27e4 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 53.6W
Case: DPAK
Mounting: SMD
Gate charge: 17.1nC
Kind of package: reel; tape
Collector current: 6A
Pulsed collector current: 7.5A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 17ns
Turn-off time: 265ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD04N60RATMA1 IKD04N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDA3E2ACF23820&compId=IKD04N60R.pdf?ci_sign=6efd6340cc350b45c24c45eb5a27009029527dee Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 22ns
Turn-off time: 317ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2479 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.74 EUR
65+1.1 EUR
121+0.59 EUR
128+0.56 EUR
1000+0.54 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
IKD04N60RFATMA1 IKD04N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED783FA69A7DB8B0259&compId=IKD04N60RF.pdf?ci_sign=a5c7bbdc7a42672854858807ced6a63c83269dd0 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD06N60RATMA1 IKD06N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDD3F1CDA1D820&compId=IKD06N60R.pdf?ci_sign=c4b8048f27233912a33abdef90e7ecad642b9369 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 19ns
Turn-off time: 279ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 814 Stücke:
Lieferzeit 7-14 Tag (e)
42+1.72 EUR
67+1.08 EUR
93+0.77 EUR
98+0.73 EUR
100+0.72 EUR
500+0.7 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
IKD06N60RFATMA1 IKD06N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDD9D4B1E49820&compId=IKD06N60RF.pdf?ci_sign=96e97126e13c6c0e3ebae3677a35248be6cea775 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 128ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD10N60RATMA1 IKD10N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDE350DCA63820&compId=IKD10N60R.pdf?ci_sign=ecb612de43b087b36cf1e0a347077a0e414f088b Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 64nC
Turn-on time: 24ns
Turn-off time: 331ns
Collector current: 10A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD10N60RFATMA1 IKD10N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDE9EBA7B4D820&compId=IKD10N60RF.pdf?ci_sign=ff07afe3ccf9dab31c2c7d5cd2c6e1307060f858 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD15N60RATMA1 IKD15N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDF1E34C9ED820&compId=IKD15N60R.pdf?ci_sign=edf8c9498bddcc0bab7c28dab797b14b4d8a5a23 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 319ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1956 Stücke:
Lieferzeit 7-14 Tag (e)
28+2.56 EUR
36+2.03 EUR
41+1.77 EUR
47+1.54 EUR
50+1.46 EUR
51+1.42 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IKD15N60RFATMA1 IKD15N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDF85E72955820&compId=IKD15N60RF.pdf?ci_sign=9b3a2a6a184bf30583c6686dacdbdd53ba4602b7 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 28ns
Turn-off time: 177ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW40N60DH3EXKSA1 IKFW40N60DH3EXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9AAD001B273D1&compId=IKFW40N60DH3E.pdf?ci_sign=d3d3fa4018878730715399a693c9252b7a658397 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 81W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 160ns
Collector current: 28A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 240 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60DH3EXKSA1 IKFW50N60DH3EXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9E65EA81B13D1&compId=IKFW50N60DH3E.pdf?ci_sign=9aec02af7ba15dd5f0fcbd322c4880e0cd8ecdd5 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 192ns
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 37A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
6+11.91 EUR
9+7.95 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60ETXKSA1 IKFW50N60ETXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE1A560ED2F820&compId=IKFW50N60ET.pdf?ci_sign=1dc63477d7ea1d12e4dda3141dab1803566a6fe8 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 120W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 332ns
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 59A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 240 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW60N60DH3EXKSA1 IKFW60N60DH3EXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9F00A97F393D1&compId=IKFW60N60DH3E.pdf?ci_sign=66fa90d9f11cedce9cdc0e769fa76651b50686b7 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 104W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Collector current: 44A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW60N60EH3XKSA1 INFINEON TECHNOLOGIES Infineon-IKFW60N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e787232af Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 164W
Case: TO247-3
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 64ns
Turn-off time: 253ns
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW90N60EH3XKSA1 INFINEON TECHNOLOGIES Infineon-IKFW90N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e976f32b5 IKFW90N60EH3XKSA1 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP04N60TXKSA1 IKP04N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE22916DB05820&compId=IKP04N60T.pdf?ci_sign=79887e35e97dee3f47a5ed0ea9755ace78373099 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO220-3
Type of transistor: IGBT
Power dissipation: 42W
Case: TO220-3
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 21ns
Turn-off time: 207ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.2 EUR
37+1.93 EUR
50+1.43 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IKP06N60TXKSA1 IKP06N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE2747C5EC7820&compId=IKP06N60T.pdf?ci_sign=fe7eb39bc96303d3dfea9fcce07ee1c6ee3290c4 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 15ns
Turn-off time: 188ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 522 Stücke:
Lieferzeit 7-14 Tag (e)
35+2.09 EUR
46+1.57 EUR
61+1.17 EUR
65+1.12 EUR
100+1.07 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IKP08N65H5XKSA1 IKP08N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4A5F4C2AA11CC&compId=IKP08N65H5-DTE.pdf?ci_sign=10d18d1a8c7b016c4dba2298e11ded404d5503e4 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 70W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 70W
Case: TO220-3
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Manufacturer series: H5
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP10N60TXKSA1 IKP10N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD65C1982C915EA&compId=IKP10N60T.pdf?ci_sign=3662fc1223253be4b0852eb3ea1462e0c0c8adde Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 110W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 219 Stücke:
Lieferzeit 7-14 Tag (e)
32+2.27 EUR
43+1.67 EUR
55+1.3 EUR
59+1.23 EUR
100+1.19 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N60TXKSA1 IKP15N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AAA8A5633DFAB1CC&compId=IKP15N60T-DTE.pdf?ci_sign=042facda16ad84d72f77461b1b1d79ca587b8db6 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 105 Stücke:
Lieferzeit 7-14 Tag (e)
28+2.59 EUR
36+2.02 EUR
48+1.52 EUR
50+1.43 EUR
100+1.37 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65F5XKSA1 IKP15N65F5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C6BF0AC93A8A18&compId=IKP15N65F5.pdf?ci_sign=813dd2687d113f2ce86cd4f9b1d438357d641c10 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 38nC
Turn-on time: 24ns
Turn-off time: 166ns
Power dissipation: 52.5W
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65H5XKSA1 IKP15N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BDA57DFD7A71BF&compId=IKP15N65H5-DTE.pdf?ci_sign=a152a4dcb39347c0c777a80d3988833d2f0dbb62 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 38nC
Power dissipation: 105W
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N60H3XKSA1 IKP20N60H3XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ACF6E42879FE51BF&compId=IKP20N60H3-DTE.pdf?ci_sign=81822baaae1c458e541be05689ce6b6972ffcdff Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO220-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 85W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 31ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N60TXKSA1 IKP20N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A8D07DB193BFE74A&compId=IKP20N60T.pdf?ci_sign=7c0e65ea17092b5cb44f595a48490fa898091448 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 36ns
Turn-off time: 299ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.73 EUR
32+2.25 EUR
34+2.12 EUR
50+2.04 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N65F5XKSA1 IKP20N65F5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE433C2FF47820&compId=IKP20N65F5.pdf?ci_sign=ec4db0b62088189ec6e7ddc9bfbe473303a75170 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 63W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 21A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 21ns
Gate charge: 48nC
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKP20N65H5XKSA1 IKP20N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BDAAE5E773D1BF&compId=IKP20N65H5-DTE.pdf?ci_sign=9c146109ea4cb9ffb436b016c05098b7ecfc6718 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 496 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.88 EUR
32+2.25 EUR
34+2.12 EUR
50+2.1 EUR
100+2.04 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IKP30N65F5XKSA1 INFINEON TECHNOLOGIES Infineon-IKP30N65F5-DS-v02_02-EN.pdf?fileId=5546d461464245d30146a51147116d12 IKP30N65F5XKSA1 THT IGBT transistors
Produkt ist nicht verfügbar
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IKP30N65H5XKSA1 INFINEON TECHNOLOGIES Infineon-IKP30N65H5-DS-v02_02-EN.pdf?fileId=5546d461464245d30146a51a2ca36d28 IKP30N65H5 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP40N65F5XKSA1 IKP40N65F5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4A7B8FBEA51CC&compId=IKP40N65F5-DTE.pdf?ci_sign=445701938249e516efd9fc137d2072b8601a1d3d Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 255W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP40N65H5XKSA1 IKP40N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4A9938764B1CC&compId=IKP40N65H5-DTE.pdf?ci_sign=aaa5629aac0ce8bc2e59854c8255ed0825945672 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 255W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IHW30N65R5XKSA1 Infineon-IHW30N65R5-DS-v02_01-EN.pdf?fileId=5546d4624d6fc3d5014db954d0454713
Hersteller: INFINEON TECHNOLOGIES
IHW30N65R5 THT IGBT transistors
Produkt ist nicht verfügbar
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IHW40N120R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCA5EF2915F820&compId=IHW40N120R5.pdf?ci_sign=ff87a8c36a7c399a49fec60936b41c23e7a4c9aa
IHW40N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
auf Bestellung 265 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.53 EUR
16+4.75 EUR
21+3.53 EUR
22+3.35 EUR
30+3.22 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N135R5XKSA1 Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a
IHW40N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 183 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
12+5.96 EUR
14+5.29 EUR
20+3.76 EUR
21+3.55 EUR
30+3.47 EUR
60+3.42 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N60RFKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCBDE92FDCF820&compId=IHW40N60RF.pdf?ci_sign=82767ed05928b8e96282a1f045c5bab220a23d94
IHW40N60RFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 40A; 152W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 152W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-off time: 217ns
Collector current: 40A
Gate-emitter voltage: ±20V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IHW40N65R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCF82A829F1820&compId=IHW40N65R5.pdf?ci_sign=f2b3df89ecc5884a555765950a699d043f13b658
IHW40N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 152W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 152W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 273ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IHW40N65R6XKSA1 Infineon-IHW40N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e19dad7275
IHW40N65R6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
17+4.29 EUR
26+2.82 EUR
27+2.66 EUR
30+2.63 EUR
Mindestbestellmenge: 17
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IHW50N65R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCFFAFB3183820&compId=IHW50N65R5.pdf?ci_sign=79609e9ed288e8af523721c936628f411dd72516
IHW50N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Turn-on time: 50ns
Turn-off time: 218ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 186 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+4.85 EUR
16+4.65 EUR
17+4.39 EUR
Mindestbestellmenge: 15
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IKA06N60TXKSA1 IKA06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42868603dee
IKA06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6.2A; 28W; TO220FP
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6.2A
Power dissipation: 28W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKA10N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD0C97D3F67820&compId=IKA10N60T.pdf?ci_sign=fadea912e4a2c8f589f65f7cdedf1af4db1bc744
IKA10N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7.2A; 30W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 30W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 67nC
Turn-on time: 20ns
Turn-off time: 250ns
Collector current: 7.2A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKA10N65ET6XKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE895EFAAFFDA7933D6&compId=IKA10N65ET6.pdf?ci_sign=357318a9289c8383d9971a53bdf9a9a379462c13
IKA10N65ET6XKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 20W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 42.5A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: T6
Gate charge: 27nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 103 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
38+1.93 EUR
41+1.77 EUR
49+1.47 EUR
52+1.4 EUR
100+1.39 EUR
500+1.34 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
IKA15N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD1E877C847820&compId=IKA15N60T.pdf?ci_sign=ce907b1e3bd538123e3a5020ae0c7b1b51be7942
IKA15N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10.6A; 35.7W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 35.7W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector current: 10.6A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 28ns
Turn-off time: 238ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKA15N65ET6XKSA2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE92E3A7A2ABEFC0D5&compId=IKA15N65ET6.pdf?ci_sign=a5d0997715c8dfdacffa9de02f1033ffc16b814e
IKA15N65ET6XKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 11A; 22W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 22W
Case: TO220FP
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 57.5A
Collector-emitter voltage: 650V
Turn-on time: 50ns
Turn-off time: 202ns
Collector current: 11A
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: T6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+71.5 EUR
10+7.15 EUR
11+6.51 EUR
29+2.46 EUR
250+1.49 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKB06N60TATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD343675457820&compId=IKB06N60T.pdf?ci_sign=dc014062b346c713605c9ed411198b67f0f4b331
IKB06N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB10N60TATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD3C93FDBDF820&compId=IKB10N60T.pdf?ci_sign=ac3f6735529e5b82d20ec8c5b3cf138128615c0e
IKB10N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 62nC
Turn-on time: 20ns
Turn-off time: 253ns
Collector current: 18A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 659 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
30+2.4 EUR
39+1.87 EUR
44+1.66 EUR
46+1.57 EUR
50+1.5 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IKB15N60TATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD41F72CB29820&compId=IKB15N60T.pdf?ci_sign=9b743b6df9c5530ebc7f8eee8c1770ec9a429f91
IKB15N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Collector current: 23A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 28ns
Turn-off time: 238ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 812 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.13 EUR
27+2.66 EUR
28+2.62 EUR
30+2.39 EUR
31+2.37 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IKB15N65EH5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD4741CB2AD820&compId=IKB15N65EH5.pdf?ci_sign=f41aca0c31e21ad8910ab653a5cd8be8dccade59
IKB15N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 38nC
Turn-on time: 33ns
Turn-off time: 172ns
Power dissipation: 52.5W
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB20N60H3ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD4BEE48ED3820&compId=IKB20N60H3.pdf?ci_sign=6e59697a1b11c9314964694537e7c76c6542e9f8
IKB20N60H3ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 36ns
Turn-off time: 205ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB20N60TATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD52D9F6417820&compId=IKB20N60T.pdf?ci_sign=c235205cf7eddca1fd52b37a7c3b186c20f8ddcc
IKB20N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 166W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 28A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKB20N65EH5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD5B574119B820&compId=IKB20N65EH5.pdf?ci_sign=84117916d2af3cf46356ecf8de4185ed193d681c
IKB20N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Gate charge: 48nC
Turn-off time: 183ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 919 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+3.98 EUR
25+2.92 EUR
26+2.76 EUR
100+2.65 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IKB30N65EH5ATMA1 Infineon-IKB30N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd134705491a
Hersteller: INFINEON TECHNOLOGIES
IKB30N65EH5ATMA1 SMD IGBT transistors
Produkt ist nicht verfügbar
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IKB30N65ES5ATMA1 Infineon-IKB30N65ES5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd135b40491d
Hersteller: INFINEON TECHNOLOGIES
IKB30N65ES5ATMA1 SMD IGBT transistors
Produkt ist nicht verfügbar
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IKB40N65EF5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD7954CB00F820&compId=IKB40N65EF5.pdf?ci_sign=f62162fca50ae64d7b1994688492f8e798f89f56
IKB40N65EF5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 56ns
Turn-off time: 212ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB40N65EH5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD7FC31BBF5820&compId=IKB40N65EH5.pdf?ci_sign=ae23714c68ac95b418155dee932388aa2c4eed0f
IKB40N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 34ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB40N65ES5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD86BB011BB820&compId=IKB40N65ES5.pdf?ci_sign=772e35322d60b6684f9f2ae2275e07e31bb27b1c
IKB40N65ES5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKCM10H60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACDC852B5593D7&compId=IKCM10H60GA.pdf?ci_sign=4b5a98fd60881639d3b88e907a50e2961c030923
IKCM10H60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 23.1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+14.3 EUR
10+8.87 EUR
14+8.62 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKCM10L60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACE25CCB96B3D7&compId=IKCM10L60GA.pdf?ci_sign=9cbc71647cd20c3c843610d6c4b7ffd632abf6e7
IKCM10L60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKCM15H60GAXKMA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACE685ADE5B3D7&compId=IKCM15H60GA.pdf?ci_sign=b05a44ba28f3534652439353305f4e3dde92d0c0
IKCM15H60GAXKMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.62 EUR
8+10.02 EUR
14+9.84 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IKCM15L60GDXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACEA79D16AF3D7&compId=IKCM15L60GD.pdf?ci_sign=398345fa98c1b63f7ad382e4628995eafd40f542
IKCM15L60GDXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 58.6W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKCM20L60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACEDFAB46113D7&compId=IKCM20L60GA.pdf?ci_sign=dd653c89070a6b043f926e264dac78d345231d50
IKCM20L60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Mounting: THT
Case: PG-MDIP24
Integrated circuit features: integrated bootstrap functionality
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Output current: -20...20A
Type of integrated circuit: driver
Power dissipation: 29.2W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IKCM30F60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCD5B09CEE67DE28&compId=IKCM30F60GA.pdf?ci_sign=783f1af8ac5ce8035a854959701563b15dac9467
IKCM30F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Operating temperature: -40...125°C
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Output current: -20...20A
Operating voltage: 13.5...18.5/0...400V DC
Power dissipation: 30.3W
Voltage class: 600V
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Protection: anti-overload OPP; undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+24.42 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IKD03N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD8E80508A9820&compId=IKD03N60RF.pdf?ci_sign=68d6aad35e656a07d48ac99a74b3916ffc4e27e4
IKD03N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 53.6W
Case: DPAK
Mounting: SMD
Gate charge: 17.1nC
Kind of package: reel; tape
Collector current: 6A
Pulsed collector current: 7.5A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 17ns
Turn-off time: 265ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD04N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDA3E2ACF23820&compId=IKD04N60R.pdf?ci_sign=6efd6340cc350b45c24c45eb5a27009029527dee
IKD04N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 22ns
Turn-off time: 317ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2479 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
41+1.74 EUR
65+1.1 EUR
121+0.59 EUR
128+0.56 EUR
1000+0.54 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
IKD04N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED783FA69A7DB8B0259&compId=IKD04N60RF.pdf?ci_sign=a5c7bbdc7a42672854858807ced6a63c83269dd0
IKD04N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD06N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDD3F1CDA1D820&compId=IKD06N60R.pdf?ci_sign=c4b8048f27233912a33abdef90e7ecad642b9369
IKD06N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 19ns
Turn-off time: 279ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 814 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
42+1.72 EUR
67+1.08 EUR
93+0.77 EUR
98+0.73 EUR
100+0.72 EUR
500+0.7 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
IKD06N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDD9D4B1E49820&compId=IKD06N60RF.pdf?ci_sign=96e97126e13c6c0e3ebae3677a35248be6cea775
IKD06N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 128ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD10N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDE350DCA63820&compId=IKD10N60R.pdf?ci_sign=ecb612de43b087b36cf1e0a347077a0e414f088b
IKD10N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 64nC
Turn-on time: 24ns
Turn-off time: 331ns
Collector current: 10A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD10N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDE9EBA7B4D820&compId=IKD10N60RF.pdf?ci_sign=ff07afe3ccf9dab31c2c7d5cd2c6e1307060f858
IKD10N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD15N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDF1E34C9ED820&compId=IKD15N60R.pdf?ci_sign=edf8c9498bddcc0bab7c28dab797b14b4d8a5a23
IKD15N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 319ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1956 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
28+2.56 EUR
36+2.03 EUR
41+1.77 EUR
47+1.54 EUR
50+1.46 EUR
51+1.42 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IKD15N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDF85E72955820&compId=IKD15N60RF.pdf?ci_sign=9b3a2a6a184bf30583c6686dacdbdd53ba4602b7
IKD15N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 28ns
Turn-off time: 177ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW40N60DH3EXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9AAD001B273D1&compId=IKFW40N60DH3E.pdf?ci_sign=d3d3fa4018878730715399a693c9252b7a658397
IKFW40N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 81W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 160ns
Collector current: 28A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 240 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60DH3EXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9E65EA81B13D1&compId=IKFW50N60DH3E.pdf?ci_sign=9aec02af7ba15dd5f0fcbd322c4880e0cd8ecdd5
IKFW50N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 192ns
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 37A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+11.91 EUR
9+7.95 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60ETXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE1A560ED2F820&compId=IKFW50N60ET.pdf?ci_sign=1dc63477d7ea1d12e4dda3141dab1803566a6fe8
IKFW50N60ETXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 120W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 332ns
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 59A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 240 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW60N60DH3EXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9F00A97F393D1&compId=IKFW60N60DH3E.pdf?ci_sign=66fa90d9f11cedce9cdc0e769fa76651b50686b7
IKFW60N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 104W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Collector current: 44A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW60N60EH3XKSA1 Infineon-IKFW60N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e787232af
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 164W
Case: TO247-3
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 64ns
Turn-off time: 253ns
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW90N60EH3XKSA1 Infineon-IKFW90N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e976f32b5
Hersteller: INFINEON TECHNOLOGIES
IKFW90N60EH3XKSA1 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP04N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE22916DB05820&compId=IKP04N60T.pdf?ci_sign=79887e35e97dee3f47a5ed0ea9755ace78373099
IKP04N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO220-3
Type of transistor: IGBT
Power dissipation: 42W
Case: TO220-3
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 21ns
Turn-off time: 207ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
17+4.2 EUR
37+1.93 EUR
50+1.43 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IKP06N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE2747C5EC7820&compId=IKP06N60T.pdf?ci_sign=fe7eb39bc96303d3dfea9fcce07ee1c6ee3290c4
IKP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 15ns
Turn-off time: 188ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 522 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
35+2.09 EUR
46+1.57 EUR
61+1.17 EUR
65+1.12 EUR
100+1.07 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IKP08N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4A5F4C2AA11CC&compId=IKP08N65H5-DTE.pdf?ci_sign=10d18d1a8c7b016c4dba2298e11ded404d5503e4
IKP08N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 70W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 70W
Case: TO220-3
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Manufacturer series: H5
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP10N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD65C1982C915EA&compId=IKP10N60T.pdf?ci_sign=3662fc1223253be4b0852eb3ea1462e0c0c8adde
IKP10N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 110W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 219 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
32+2.27 EUR
43+1.67 EUR
55+1.3 EUR
59+1.23 EUR
100+1.19 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AAA8A5633DFAB1CC&compId=IKP15N60T-DTE.pdf?ci_sign=042facda16ad84d72f77461b1b1d79ca587b8db6
IKP15N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 105 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
28+2.59 EUR
36+2.02 EUR
48+1.52 EUR
50+1.43 EUR
100+1.37 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65F5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C6BF0AC93A8A18&compId=IKP15N65F5.pdf?ci_sign=813dd2687d113f2ce86cd4f9b1d438357d641c10
IKP15N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 38nC
Turn-on time: 24ns
Turn-off time: 166ns
Power dissipation: 52.5W
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BDA57DFD7A71BF&compId=IKP15N65H5-DTE.pdf?ci_sign=a152a4dcb39347c0c777a80d3988833d2f0dbb62
IKP15N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 38nC
Power dissipation: 105W
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N60H3XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ACF6E42879FE51BF&compId=IKP20N60H3-DTE.pdf?ci_sign=81822baaae1c458e541be05689ce6b6972ffcdff
IKP20N60H3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO220-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 85W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 31ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A8D07DB193BFE74A&compId=IKP20N60T.pdf?ci_sign=7c0e65ea17092b5cb44f595a48490fa898091448
IKP20N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 36ns
Turn-off time: 299ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.73 EUR
32+2.25 EUR
34+2.12 EUR
50+2.04 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N65F5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE433C2FF47820&compId=IKP20N65F5.pdf?ci_sign=ec4db0b62088189ec6e7ddc9bfbe473303a75170
IKP20N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 63W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 21A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 21ns
Gate charge: 48nC
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BDAAE5E773D1BF&compId=IKP20N65H5-DTE.pdf?ci_sign=9c146109ea4cb9ffb436b016c05098b7ecfc6718
IKP20N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 496 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
19+3.88 EUR
32+2.25 EUR
34+2.12 EUR
50+2.1 EUR
100+2.04 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IKP30N65F5XKSA1 Infineon-IKP30N65F5-DS-v02_02-EN.pdf?fileId=5546d461464245d30146a51147116d12
Hersteller: INFINEON TECHNOLOGIES
IKP30N65F5XKSA1 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP30N65H5XKSA1 Infineon-IKP30N65H5-DS-v02_02-EN.pdf?fileId=5546d461464245d30146a51a2ca36d28
Hersteller: INFINEON TECHNOLOGIES
IKP30N65H5 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP40N65F5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4A7B8FBEA51CC&compId=IKP40N65F5-DTE.pdf?ci_sign=445701938249e516efd9fc137d2072b8601a1d3d
IKP40N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 255W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP40N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4A9938764B1CC&compId=IKP40N65H5-DTE.pdf?ci_sign=aaa5629aac0ce8bc2e59854c8255ed0825945672
IKP40N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 255W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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