Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (148873) > Seite 1277 nach 2482
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IRF9540NLPBF | INFINEON TECHNOLOGIES |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO262 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -23A Power dissipation: 140W Case: TO262 Mounting: THT Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 125 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9540NPBF | INFINEON TECHNOLOGIES |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -23A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.117Ω Mounting: THT Kind of channel: enhancement Gate charge: 64.7nC Kind of package: tube Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1095 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9Z24NPBF | INFINEON TECHNOLOGIES |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -55V Drain current: -12A Power dissipation: 45W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.175Ω Mounting: THT Kind of channel: enhancement Gate charge: 12.7nC Technology: HEXFET® Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 461 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFB3004PBF | INFINEON TECHNOLOGIES |
IRFB3004PBF THT N channel transistors |
auf Bestellung 91 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB3006PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 189 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB3077PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 210A; 370W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 210A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 3.3mΩ Gate-source voltage: ±20V Gate charge: 160nC Technology: HEXFET® Power dissipation: 370W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 188 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB3206GPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 182 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB3206PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 346 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB3207PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 120A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 21 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB3207ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 120A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 178 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB3306PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 160A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Gate charge: 85nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1273 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB3307PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 130A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 21 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB3307ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 120A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: THT Gate charge: 79nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 59 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB3607PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Kind of channel: enhancement Technology: HEXFET® Gate charge: 56nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1125 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFB3806PBF | INFINEON TECHNOLOGIES |
IRFB3806PBF THT N channel transistors |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFB38N20DPBF | INFINEON TECHNOLOGIES |
IRFB38N20DPBF THT N channel transistors |
auf Bestellung 65 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFB4019PBF | INFINEON TECHNOLOGIES |
IRFB4019PBF THT N channel transistors |
auf Bestellung 922 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB4020PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.1Ω Gate charge: 18nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 771 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB4110PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 370W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 363 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB4115PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 74A Power dissipation: 380W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 77nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 356 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFB4127PBF | INFINEON TECHNOLOGIES |
IRFB4127PBF THT N channel transistors |
auf Bestellung 599 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFB4227PBF | INFINEON TECHNOLOGIES |
IRFB4227PBF THT N channel transistors |
auf Bestellung 1234 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFB4227PBFXKMA1 | INFINEON TECHNOLOGIES |
IRFB4227PBFXKMA1 THT N channel transistors |
auf Bestellung 143 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB4228PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 83A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 12mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 135 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFB4229PBF | INFINEON TECHNOLOGIES |
IRFB4229PBF THT N channel transistors |
auf Bestellung 217 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB4310PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 7mΩ Gate-source voltage: ±20V Gate charge: 170nC Technology: HEXFET® Power dissipation: 330W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 166 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB4310ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 127A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 6mΩ Gate-source voltage: ±20V Gate charge: 0.12µC Technology: HEXFET® Power dissipation: 250W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFB4321PBF | INFINEON TECHNOLOGIES |
IRFB4321PBF THT N channel transistors |
auf Bestellung 154 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB4332PbF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 60A Power dissipation: 390W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 33mΩ Mounting: THT Gate charge: 99nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB4410PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 96A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 103 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB4410ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 97A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 83nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 514 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFB4510PBF | INFINEON TECHNOLOGIES |
IRFB4510PBF THT N channel transistors |
auf Bestellung 232 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFB4610PBF | INFINEON TECHNOLOGIES |
IRFB4610PBF THT N channel transistors |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFB4615PBF | INFINEON TECHNOLOGIES |
IRFB4615PBF THT N channel transistors |
auf Bestellung 108 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFB4620PBF | INFINEON TECHNOLOGIES |
IRFB4620PBF THT N channel transistors |
auf Bestellung 304 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB52N15DPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 60A Power dissipation: 320W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 32mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 49 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFB5615PBF | INFINEON TECHNOLOGIES |
IRFB5615PBF THT N channel transistors |
auf Bestellung 276 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFB5620PBF | INFINEON TECHNOLOGIES |
IRFB5620PBF THT N channel transistors |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB7430PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 409A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: THT Gate charge: 300nC Kind of package: tube Kind of channel: enhancement Trade name: StrongIRFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 173 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB7437PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 250A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Trade name: StrongIRFET Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 709 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFB7440PBF | INFINEON TECHNOLOGIES |
IRFB7440PBF THT N channel transistors |
auf Bestellung 764 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB7446PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 123A Power dissipation: 99W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement Trade name: StrongIRFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRFB7530PBF | INFINEON TECHNOLOGIES |
IRFB7530PBF THT N channel transistors |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFB7534PBF | INFINEON TECHNOLOGIES |
IRFB7534PBF THT N channel transistors |
auf Bestellung 712 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB7537PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 173A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Gate charge: 142nC Kind of package: tube Kind of channel: enhancement Trade name: StrongIRFET Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 145 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFB7540PBF | INFINEON TECHNOLOGIES |
IRFB7540PBF THT N channel transistors |
auf Bestellung 154 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB7545PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 95A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 95A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Trade name: StrongIRFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRFB7546PBF | INFINEON TECHNOLOGIES |
IRFB7546PBF THT N channel transistors |
auf Bestellung 1275 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFB7730PBF | INFINEON TECHNOLOGIES |
IRFB7730PBF THT N channel transistors |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFH4234TRPBF | INFINEON TECHNOLOGIES |
IRFH4234TRPBF SMD N channel transistors |
auf Bestellung 1516 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFH7440TRPBF | INFINEON TECHNOLOGIES |
IRFH7440TRPBF SMD N channel transistors |
auf Bestellung 3185 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFH9310TRPBF | INFINEON TECHNOLOGIES |
IRFH9310TRPBF SMD P channel transistors |
auf Bestellung 3430 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFHM9331TRPBF | INFINEON TECHNOLOGIES |
IRFHM9331TRPBF SMD P channel transistors |
auf Bestellung 1135 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI1310NPBF | INFINEON TECHNOLOGIES |
IRFI1310NPBF THT N channel transistors |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFI3205PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 56A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Gate charge: 113.3nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI4212H-117PXKMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 100V; 6.8A; Idm: 44A; 7W; TO220-5 Mounting: THT Case: TO220-5 Kind of package: tube Polarisation: unipolar Gate charge: 12nC On-state resistance: 58mΩ Drain current: 6.8A Power dissipation: 7W Gate-source voltage: ±20V Pulsed drain current: 44A Drain-source voltage: 100V Kind of channel: enhancement Features of semiconductor devices: Half-Bridge Power MOSFET Type of transistor: N-MOSFET x2 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI4321PBF | INFINEON TECHNOLOGIES |
IRFI4321PBF THT N channel transistors |
auf Bestellung 62 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI4410ZPBF | INFINEON TECHNOLOGIES |
IRFI4410ZPBF THT N channel transistors |
auf Bestellung 993 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFI530NPBF | INFINEON TECHNOLOGIES |
IRFI530NPBF THT N channel transistors |
auf Bestellung 352 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFI540NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 18A Power dissipation: 42W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: THT Gate charge: 62.7nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF9540NLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO262
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO262
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 125 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.77 EUR |
| 32+ | 2.29 EUR |
| 50+ | 1.96 EUR |
| 100+ | 1.83 EUR |
| 500+ | 1.57 EUR |
| IRF9540NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 64.7nC
Kind of package: tube
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 64.7nC
Kind of package: tube
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1095 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.44 EUR |
| 59+ | 1.21 EUR |
| 72+ | 1 EUR |
| 87+ | 0.83 EUR |
| 104+ | 0.69 EUR |
| 250+ | 0.67 EUR |
| IRF9Z24NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 12.7nC
Technology: HEXFET®
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 12.7nC
Technology: HEXFET®
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 461 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 139+ | 0.52 EUR |
| 150+ | 0.48 EUR |
| 250+ | 0.43 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.37 EUR |
| IRFB3004PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFB3004PBF THT N channel transistors
IRFB3004PBF THT N channel transistors
auf Bestellung 91 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.52 EUR |
| 31+ | 2.33 EUR |
| 33+ | 2.2 EUR |
| IRFB3006PBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 189 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.77 EUR |
| IRFB3077PBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; 370W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Gate charge: 160nC
Technology: HEXFET®
Power dissipation: 370W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; 370W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Gate charge: 160nC
Technology: HEXFET®
Power dissipation: 370W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 188 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.93 EUR |
| 41+ | 1.77 EUR |
| 50+ | 1.72 EUR |
| 500+ | 1.62 EUR |
| IRFB3206GPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 182 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 1.77 EUR |
| 61+ | 1.19 EUR |
| 100+ | 0.92 EUR |
| 250+ | 0.83 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.72 EUR |
| IRFB3206PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 346 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.73 EUR |
| 45+ | 1.62 EUR |
| 50+ | 1.43 EUR |
| 100+ | 1.34 EUR |
| 250+ | 1.22 EUR |
| 500+ | 1.13 EUR |
| 750+ | 1.09 EUR |
| IRFB3207PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.4 EUR |
| IRFB3207ZPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 178 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.23 EUR |
| 37+ | 1.96 EUR |
| 43+ | 1.69 EUR |
| 50+ | 1.47 EUR |
| IRFB3306PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1273 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.19 EUR |
| 36+ | 2.03 EUR |
| 40+ | 1.82 EUR |
| 50+ | 1.57 EUR |
| 100+ | 1.32 EUR |
| 250+ | 1.04 EUR |
| 500+ | 0.92 EUR |
| IRFB3307PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.4 EUR |
| 50+ | 1.43 EUR |
| 100+ | 1.32 EUR |
| 250+ | 1.29 EUR |
| IRFB3307ZPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 59 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.72 EUR |
| 29+ | 2.55 EUR |
| 35+ | 2.04 EUR |
| 39+ | 1.84 EUR |
| 50+ | 1.62 EUR |
| 100+ | 1.47 EUR |
| 200+ | 1.34 EUR |
| IRFB3607PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 56nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 56nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1125 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 45+ | 1.62 EUR |
| 74+ | 0.98 EUR |
| 85+ | 0.85 EUR |
| 108+ | 0.67 EUR |
| 116+ | 0.62 EUR |
| 250+ | 0.61 EUR |
| IRFB3806PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFB3806PBF THT N channel transistors
IRFB3806PBF THT N channel transistors
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 26+ | 2.75 EUR |
| 70+ | 1.02 EUR |
| 5000+ | 0.64 EUR |
| IRFB38N20DPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
IRFB38N20DPBF THT N channel transistors
IRFB38N20DPBF THT N channel transistors
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.93 EUR |
| 48+ | 1.5 EUR |
| 51+ | 1.42 EUR |
| 2000+ | 1.36 EUR |
| IRFB4019PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
IRFB4019PBF THT N channel transistors
IRFB4019PBF THT N channel transistors
auf Bestellung 922 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 1.99 EUR |
| 103+ | 0.7 EUR |
| 109+ | 0.66 EUR |
| 1000+ | 0.64 EUR |
| IRFB4020PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.1Ω
Gate charge: 18nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.1Ω
Gate charge: 18nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 771 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 66+ | 1.09 EUR |
| IRFB4110PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 363 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.59 EUR |
| 33+ | 2.19 EUR |
| 41+ | 1.74 EUR |
| 54+ | 1.34 EUR |
| 100+ | 1.13 EUR |
| IRFB4115PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 356 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.12 EUR |
| 28+ | 2.63 EUR |
| 29+ | 2.55 EUR |
| IRFB4127PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFB4127PBF THT N channel transistors
IRFB4127PBF THT N channel transistors
auf Bestellung 599 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.97 EUR |
| 48+ | 1.5 EUR |
| 51+ | 1.42 EUR |
| IRFB4227PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFB4227PBF THT N channel transistors
IRFB4227PBF THT N channel transistors
auf Bestellung 1234 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.17 EUR |
| 64+ | 1.13 EUR |
| 68+ | 1.06 EUR |
| IRFB4227PBFXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
IRFB4227PBFXKMA1 THT N channel transistors
IRFB4227PBFXKMA1 THT N channel transistors
auf Bestellung 143 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.93 EUR |
| 62+ | 1.16 EUR |
| 65+ | 1.1 EUR |
| 500+ | 1.06 EUR |
| IRFB4228PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 135 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.15 EUR |
| 32+ | 2.26 EUR |
| 50+ | 2.1 EUR |
| 100+ | 2.04 EUR |
| 500+ | 2.02 EUR |
| IRFB4229PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFB4229PBF THT N channel transistors
IRFB4229PBF THT N channel transistors
auf Bestellung 217 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.76 EUR |
| 43+ | 1.67 EUR |
| 46+ | 1.57 EUR |
| 500+ | 1.53 EUR |
| IRFB4310PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Gate charge: 170nC
Technology: HEXFET®
Power dissipation: 330W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Gate charge: 170nC
Technology: HEXFET®
Power dissipation: 330W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 166 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.56 EUR |
| 32+ | 2.26 EUR |
| 38+ | 1.93 EUR |
| 50+ | 1.57 EUR |
| 100+ | 1.54 EUR |
| IRFB4310ZPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 6mΩ
Gate-source voltage: ±20V
Gate charge: 0.12µC
Technology: HEXFET®
Power dissipation: 250W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 6mΩ
Gate-source voltage: ±20V
Gate charge: 0.12µC
Technology: HEXFET®
Power dissipation: 250W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 2.97 EUR |
| 50+ | 1.79 EUR |
| IRFB4321PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
IRFB4321PBF THT N channel transistors
IRFB4321PBF THT N channel transistors
auf Bestellung 154 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.66 EUR |
| 38+ | 1.92 EUR |
| 40+ | 1.8 EUR |
| IRFB4332PbF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 10+ | 7.15 EUR |
| 25+ | 2.86 EUR |
| IRFB4410PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 103 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.66 EUR |
| 44+ | 1.63 EUR |
| 54+ | 1.33 EUR |
| 100+ | 1.22 EUR |
| 250+ | 1.1 EUR |
| 500+ | 1.06 EUR |
| IRFB4410ZPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 514 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.16 EUR |
| 37+ | 1.97 EUR |
| 49+ | 1.47 EUR |
| 56+ | 1.29 EUR |
| 66+ | 1.09 EUR |
| 100+ | 0.99 EUR |
| 200+ | 0.89 EUR |
| IRFB4510PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFB4510PBF THT N channel transistors
IRFB4510PBF THT N channel transistors
auf Bestellung 232 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 49+ | 1.49 EUR |
| 91+ | 0.79 EUR |
| 97+ | 0.74 EUR |
| IRFB4610PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
IRFB4610PBF THT N channel transistors
IRFB4610PBF THT N channel transistors
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 2.99 EUR |
| 57+ | 1.27 EUR |
| 59+ | 1.22 EUR |
| IRFB4615PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFB4615PBF THT N channel transistors
IRFB4615PBF THT N channel transistors
auf Bestellung 108 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.37 EUR |
| 80+ | 0.9 EUR |
| 84+ | 0.86 EUR |
| 1000+ | 0.83 EUR |
| IRFB4620PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFB4620PBF THT N channel transistors
IRFB4620PBF THT N channel transistors
auf Bestellung 304 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.58 EUR |
| 30+ | 2.46 EUR |
| 31+ | 2.33 EUR |
| IRFB52N15DPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 49 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.1 EUR |
| 39+ | 1.87 EUR |
| 40+ | 1.83 EUR |
| 42+ | 1.72 EUR |
| 50+ | 1.63 EUR |
| 100+ | 1.54 EUR |
| 250+ | 1.44 EUR |
| IRFB5615PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFB5615PBF THT N channel transistors
IRFB5615PBF THT N channel transistors
auf Bestellung 276 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.8 EUR |
| 69+ | 1.04 EUR |
| 71+ | 1.02 EUR |
| 73+ | 0.99 EUR |
| IRFB5620PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFB5620PBF THT N channel transistors
IRFB5620PBF THT N channel transistors
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 3.98 EUR |
| 20+ | 3.58 EUR |
| 37+ | 1.93 EUR |
| IRFB7430PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 409A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 409A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 173 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.96 EUR |
| 28+ | 2.62 EUR |
| 38+ | 1.9 EUR |
| 50+ | 1.79 EUR |
| IRFB7437PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 709 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.12 EUR |
| 64+ | 1.12 EUR |
| 74+ | 0.98 EUR |
| 100+ | 0.92 EUR |
| 250+ | 0.84 EUR |
| 500+ | 0.79 EUR |
| IRFB7440PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFB7440PBF THT N channel transistors
IRFB7440PBF THT N channel transistors
auf Bestellung 764 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.37 EUR |
| 81+ | 0.89 EUR |
| 87+ | 0.83 EUR |
| 91+ | 0.79 EUR |
| IRFB7446PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 123A
Power dissipation: 99W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 123A
Power dissipation: 99W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFB7530PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFB7530PBF THT N channel transistors
IRFB7530PBF THT N channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.02 EUR |
| 39+ | 1.87 EUR |
| 41+ | 1.77 EUR |
| 500+ | 1.76 EUR |
| IRFB7534PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFB7534PBF THT N channel transistors
IRFB7534PBF THT N channel transistors
auf Bestellung 712 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.35 EUR |
| 60+ | 1.2 EUR |
| 64+ | 1.13 EUR |
| 100+ | 1.12 EUR |
| IRFB7537PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 145 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.36 EUR |
| 41+ | 1.77 EUR |
| 49+ | 1.47 EUR |
| 61+ | 1.17 EUR |
| 72+ | 1 EUR |
| 100+ | 0.97 EUR |
| IRFB7540PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFB7540PBF THT N channel transistors
IRFB7540PBF THT N channel transistors
auf Bestellung 154 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.36 EUR |
| 96+ | 0.75 EUR |
| 101+ | 0.71 EUR |
| IRFB7545PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 95A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 95A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFB7546PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFB7546PBF THT N channel transistors
IRFB7546PBF THT N channel transistors
auf Bestellung 1275 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 84+ | 0.86 EUR |
| 85+ | 0.84 EUR |
| 90+ | 0.8 EUR |
| IRFB7730PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFB7730PBF THT N channel transistors
IRFB7730PBF THT N channel transistors
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.29 EUR |
| 37+ | 1.97 EUR |
| 39+ | 1.86 EUR |
| IRFH4234TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFH4234TRPBF SMD N channel transistors
IRFH4234TRPBF SMD N channel transistors
auf Bestellung 1516 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 190+ | 0.38 EUR |
| 214+ | 0.33 EUR |
| 226+ | 0.32 EUR |
| 235+ | 0.3 EUR |
| IRFH7440TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFH7440TRPBF SMD N channel transistors
IRFH7440TRPBF SMD N channel transistors
auf Bestellung 3185 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.92 EUR |
| 57+ | 1.26 EUR |
| 59+ | 1.22 EUR |
| 63+ | 1.14 EUR |
| IRFH9310TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFH9310TRPBF SMD P channel transistors
IRFH9310TRPBF SMD P channel transistors
auf Bestellung 3430 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.09 EUR |
| 61+ | 1.19 EUR |
| 65+ | 1.12 EUR |
| 100+ | 1.1 EUR |
| IRFHM9331TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFHM9331TRPBF SMD P channel transistors
IRFHM9331TRPBF SMD P channel transistors
auf Bestellung 1135 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.94 EUR |
| 229+ | 0.31 EUR |
| 242+ | 0.3 EUR |
| 4000+ | 0.29 EUR |
| IRFI1310NPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFI1310NPBF THT N channel transistors
IRFI1310NPBF THT N channel transistors
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.51 EUR |
| 29+ | 2.46 EUR |
| 50+ | 1.72 EUR |
| IRFI3205PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.15 EUR |
| 25+ | 2.86 EUR |
| IRFI4212H-117PXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.8A; Idm: 44A; 7W; TO220-5
Mounting: THT
Case: TO220-5
Kind of package: tube
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 58mΩ
Drain current: 6.8A
Power dissipation: 7W
Gate-source voltage: ±20V
Pulsed drain current: 44A
Drain-source voltage: 100V
Kind of channel: enhancement
Features of semiconductor devices: Half-Bridge Power MOSFET
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.8A; Idm: 44A; 7W; TO220-5
Mounting: THT
Case: TO220-5
Kind of package: tube
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 58mΩ
Drain current: 6.8A
Power dissipation: 7W
Gate-source voltage: ±20V
Pulsed drain current: 44A
Drain-source voltage: 100V
Kind of channel: enhancement
Features of semiconductor devices: Half-Bridge Power MOSFET
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 47+ | 1.54 EUR |
| 56+ | 1.29 EUR |
| 63+ | 1.14 EUR |
| 68+ | 1.06 EUR |
| 100+ | 1.04 EUR |
| IRFI4321PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFI4321PBF THT N channel transistors
IRFI4321PBF THT N channel transistors
auf Bestellung 62 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.43 EUR |
| 32+ | 2.3 EUR |
| IRFI4410ZPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFI4410ZPBF THT N channel transistors
IRFI4410ZPBF THT N channel transistors
auf Bestellung 993 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.23 EUR |
| 31+ | 2.32 EUR |
| 33+ | 2.19 EUR |
| 250+ | 2.1 EUR |
| IRFI530NPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRFI530NPBF THT N channel transistors
IRFI530NPBF THT N channel transistors
auf Bestellung 352 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.36 EUR |
| 83+ | 0.87 EUR |
| 88+ | 0.82 EUR |
| IRFI540NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 1.74 EUR |
| 52+ | 1.4 EUR |
| 60+ | 1.2 EUR |
| 100+ | 1.1 EUR |
| 250+ | 1 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.86 EUR |





