Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (151638) > Seite 1277 nach 2528
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IGP50N60TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 50A; 333W; TO220-3 Type of transistor: IGBT Power dissipation: 333W Case: TO220-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IGT60R070D1ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A Type of transistor: N-JFET Technology: CoolGaN™ Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 60A Case: PG-HSOF-8-3 Gate-source voltage: -10V On-state resistance: 70mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: tape Kind of channel: enhancement Power dissipation: 125W Gate current: 20mA Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IGT60R190D1SATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A Gate current: 7.7mA Drain-source voltage: 600V Drain current: 12.5A On-state resistance: 0.19Ω Type of transistor: N-JFET Power dissipation: 55.5W Polarisation: unipolar Kind of package: tape Gate charge: 3.2nC Technology: CoolGaN™ Kind of transistor: HEMT Kind of channel: enhancement Gate-source voltage: -10V Pulsed drain current: 23A Mounting: SMD Case: PG-HSOF-8-3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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IGU04N60TAKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 4A; 42W; TO251 Type of transistor: IGBT Power dissipation: 42W Case: TO251 Mounting: THT Gate charge: 27nC Kind of package: tube Gate-emitter voltage: ±20V Collector-emitter voltage: 600V Technology: TRENCHSTOP™ Turn-on time: 21ns Turn-off time: 207ns Collector current: 4A Pulsed collector current: 12A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 181 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW100N60H3FKSA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IGW15N120H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 217W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: H3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW20N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 170W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 170W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Manufacturer series: H3 Collector current: 20A Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 48 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW25N120H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 326W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Technology: TRENCHSTOP™ 3 Manufacturer series: H3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 174 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW25T120FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 25A; 190W; TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 25A Type of transistor: IGBT Power dissipation: 190W Kind of package: tube Mounting: THT Case: TO247-3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 53 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW30N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3 Mounting: THT Collector current: 30A Kind of package: tube Type of transistor: IGBT Collector-emitter voltage: 600V Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 442 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW30N60TFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Kind of package: tube Collector current: 30A Gate-emitter voltage: ±20V Power dissipation: 187W Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 92 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW30N65L5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 114W Case: TO247-3 Mounting: THT Gate charge: 168nC Kind of package: tube Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Turn-on time: 44ns Turn-off time: 359ns Pulsed collector current: 120A Collector current: 62A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IGW40N120H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3 Type of transistor: IGBT Power dissipation: 483W Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ 3 Manufacturer series: H3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW40N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 306W Case: TO247-3 Mounting: THT Kind of package: tube Collector current: 40A Gate-emitter voltage: ±20V Manufacturer series: H3 Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW40N65F5FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; F5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: THT Kind of package: tube Technology: TRENCHSTOP™ 5 Manufacturer series: F5 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 114 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW40N65H5FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; H5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Kind of package: tube Technology: TRENCHSTOP™ 5 Manufacturer series: H5 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 36 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW40T120FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 270W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 105A Mounting: THT Kind of package: tube Technology: TRENCHSTOP™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 126 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW50N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 333W Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Manufacturer series: H3 Collector current: 50A Pulsed collector current: 200A Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 34 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW50N60TFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 333W Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 64A Pulsed collector current: 150A Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 135 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW50N65F5FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 80A; 270W; TO247-3; F5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 270W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: F5 Technology: TRENCHSTOP™ 5 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IGW50N65H5FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 305W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IGW60N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 416W Case: TO247-3 Mounting: THT Kind of package: tube Collector current: 60A Pulsed collector current: 180A Manufacturer series: H3 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 97 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW75N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Type of transistor: IGBT Power dissipation: 428W Case: TO247-3 Mounting: THT Kind of package: tube Collector current: 75A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IGW75N60TFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Type of transistor: IGBT Power dissipation: 428W Case: TO247-3 Mounting: THT Kind of package: tube Collector current: 75A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 196 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW75N65H5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 160nC Turn-on time: 61ns Turn-off time: 215ns Power dissipation: 198W Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 300A Collector-emitter voltage: 650V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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IGZ100N65H5XKSA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IGZ50N65H5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 54A Power dissipation: 136W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 109nC Kind of package: tube Manufacturer series: H5 Technology: TRENCHSTOP™ 5 Turn-on time: 27ns Turn-off time: 271ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IGZ75N65H5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4 Type of transistor: IGBT Case: TO247-4 Mounting: THT Kind of package: tube Gate charge: 166nC Turn-on time: 37ns Turn-off time: 415ns Power dissipation: 197W Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 300A Collector-emitter voltage: 650V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IHW15N120E1XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 62.2W; TO247-3 Type of transistor: IGBT Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Mounting: THT Case: TO247-3 Technology: TRENCHSTOP™ RC Kind of package: tube Turn-on time: 1940ns Gate charge: 90nC Turn-off time: 1450ns Collector current: 15A Gate-emitter voltage: ±20V Power dissipation: 62.2W Pulsed collector current: 45A Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
auf Bestellung 87 Stücke: Lieferzeit 7-14 Tag (e) |
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IHW15N120R3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 127W; TO247-3 Type of transistor: IGBT Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Mounting: THT Case: TO247-3 Technology: TRENCHSTOP™ RC Kind of package: tube Gate charge: 165nC Turn-off time: 346ns Collector current: 15A Gate-emitter voltage: ±20V Power dissipation: 127W Pulsed collector current: 45A Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
auf Bestellung 76 Stücke: Lieferzeit 7-14 Tag (e) |
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IHW20N120R5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 144W Case: TO247-3 Mounting: THT Gate charge: 170nC Kind of package: tube Turn-off time: 440ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 60A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 64 Stücke: Lieferzeit 7-14 Tag (e) |
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IHW20N135R5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 20A; 144W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 1.35kV Collector current: 20A Power dissipation: 144W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 170nC Kind of package: tube Turn-off time: 440ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Anzahl je Verpackung: 1 Stücke |
auf Bestellung 65 Stücke: Lieferzeit 7-14 Tag (e) |
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IHW20N65R5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 75W Case: TO247-3 Mounting: THT Kind of package: tube Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 60A Collector-emitter voltage: 650V Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Gate charge: 97nC Turn-off time: 257ns Anzahl je Verpackung: 240 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IHW25N120E1XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 92.4W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 75A Mounting: THT Gate charge: 147nC Kind of package: tube Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Technology: TRENCHSTOP™ RC Turn-off time: 2004ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 192 Stücke: Lieferzeit 7-14 Tag (e) |
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IHW30N110R3FKSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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IHW30N120R5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 165W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 235nC Kind of package: tube Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Turn-off time: 363ns Technology: TRENCHSTOP™ RC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 48 Stücke: Lieferzeit 7-14 Tag (e) |
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IHW30N135R5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.35kV Collector current: 30A Power dissipation: 165W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 235nC Kind of package: tube Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Turn-off time: 680ns Technology: TRENCHSTOP™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
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IHW30N160R5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.6kV Collector current: 39A Power dissipation: 131.5W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 205nC Kind of package: tube Turn-off time: 411ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Anzahl je Verpackung: 1 Stücke |
auf Bestellung 267 Stücke: Lieferzeit 7-14 Tag (e) |
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IHW30N65R5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 88W Case: TO247-3 Mounting: THT Gate charge: 153nC Kind of package: tube Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Turn-off time: 228ns Pulsed collector current: 90A Collector current: 30A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IHW40N120R5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3 Type of transistor: IGBT Power dissipation: 197W Case: TO247-3 Mounting: THT Gate charge: 310nC Kind of package: tube Turn-off time: 440ns Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 120A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ RC Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Anzahl je Verpackung: 1 Stücke |
auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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IHW40N135R5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.35kV Collector current: 40A Power dissipation: 197W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 305nC Kind of package: tube Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Turn-off time: 0.5µs Technology: TRENCHSTOP™ RC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 183 Stücke: Lieferzeit 7-14 Tag (e) |
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IHW40N60RFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 40A; 152W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 152W Case: TO247-3 Mounting: THT Gate charge: 223nC Kind of package: tube Turn-off time: 217ns Collector current: 40A Gate-emitter voltage: ±20V Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Pulsed collector current: 120A Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IHW40N65R5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 40A; 152W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 152W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 193nC Kind of package: tube Turn-on time: 59ns Turn-off time: 273ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Technology: TRENCHSTOP™ 5 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IHW40N65R6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 54A Power dissipation: 105W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 159nC Kind of package: tube Turn-on time: 36ns Turn-off time: 256ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Anzahl je Verpackung: 1 Stücke |
auf Bestellung 190 Stücke: Lieferzeit 7-14 Tag (e) |
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IHW50N65R5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 141W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 230nC Kind of package: tube Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Technology: TRENCHSTOP™ 5 Turn-on time: 50ns Turn-off time: 218ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 186 Stücke: Lieferzeit 7-14 Tag (e) |
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IKA06N60TXKSA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IKA10N60TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 7.2A; 30W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 30W Case: TO220-3 Mounting: THT Kind of package: tube Gate charge: 67nC Turn-on time: 20ns Turn-off time: 250ns Collector current: 7.2A Gate-emitter voltage: ±20V Pulsed collector current: 30A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IKA10N65ET6XKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6 Type of transistor: IGBT Technology: TRENCHSTOP™ 6 Power dissipation: 20W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 27nC Collector current: 9A Gate-emitter voltage: ±20V Pulsed collector current: 42.5A Collector-emitter voltage: 650V Manufacturer series: T6 Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 103 Stücke: Lieferzeit 7-14 Tag (e) |
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IKA15N60TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 10.6A; 35.7W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 35.7W Case: TO220-3 Mounting: THT Gate charge: 87nC Kind of package: tube Collector current: 10.6A Gate-emitter voltage: ±20V Pulsed collector current: 45A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 28ns Turn-off time: 238ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IKA15N65ET6XKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 11A; 22W; TO220FP; T6 Type of transistor: IGBT Technology: TRENCHSTOP™ 6 Power dissipation: 22W Case: TO220FP Mounting: THT Gate charge: 37nC Kind of package: tube Gate-emitter voltage: ±20V Pulsed collector current: 57.5A Collector-emitter voltage: 650V Turn-on time: 50ns Turn-off time: 202ns Collector current: 11A Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: T6 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IKB06N60TATMA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IKB10N60TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 110W Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 62nC Turn-on time: 20ns Turn-off time: 253ns Collector current: 18A Gate-emitter voltage: ±20V Pulsed collector current: 30A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 659 Stücke: Lieferzeit 7-14 Tag (e) |
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IKB15N60TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Mounting: SMD Kind of package: reel; tape Technology: TRENCHSTOP™ Turn-on time: 28ns Gate charge: 87nC Turn-off time: 238ns Gate-emitter voltage: ±20V Collector current: 23A Pulsed collector current: 45A Power dissipation: 130W Collector-emitter voltage: 600V Case: D2PAK Anzahl je Verpackung: 1 Stücke |
auf Bestellung 812 Stücke: Lieferzeit 7-14 Tag (e) |
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IKB15N65EH5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 18A; 52.5W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 38nC Turn-on time: 33ns Turn-off time: 172ns Power dissipation: 52.5W Collector current: 18A Gate-emitter voltage: ±20V Pulsed collector current: 45A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IKB20N60H3ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 85W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 85W Case: D2PAK Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.12µC Turn-on time: 36ns Turn-off time: 205ns Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 80A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IKB20N60TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 28A; 166W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 166W Case: D2PAK Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.12µC Turn-on time: 32ns Turn-off time: 241ns Collector current: 28A Gate-emitter voltage: ±20V Pulsed collector current: 60A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IKB20N65EH5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 62.5W Case: D2PAK Mounting: SMD Kind of package: reel; tape Collector current: 25A Gate-emitter voltage: ±20V Pulsed collector current: 60A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 40ns Gate charge: 48nC Turn-off time: 183ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 919 Stücke: Lieferzeit 7-14 Tag (e) |
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IKB30N65EH5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 35A; 94W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 94W Case: D2PAK Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Turn-on time: 52ns Turn-off time: 184ns Pulsed collector current: 120A Collector current: 35A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IKB30N65ES5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 39.5A; 94W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 94W Case: D2PAK Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Turn-on time: 29ns Turn-off time: 154ns Pulsed collector current: 120A Collector current: 39.5A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IKB40N65EF5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Turn-on time: 56ns Turn-off time: 212ns Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ 5 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IGP50N60TXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO220-3
Type of transistor: IGBT
Power dissipation: 333W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO220-3
Type of transistor: IGBT
Power dissipation: 333W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGT60R070D1ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 125W
Gate current: 20mA
Anzahl je Verpackung: 2000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 125W
Gate current: 20mA
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGT60R190D1SATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A
Gate current: 7.7mA
Drain-source voltage: 600V
Drain current: 12.5A
On-state resistance: 0.19Ω
Type of transistor: N-JFET
Power dissipation: 55.5W
Polarisation: unipolar
Kind of package: tape
Gate charge: 3.2nC
Technology: CoolGaN™
Kind of transistor: HEMT
Kind of channel: enhancement
Gate-source voltage: -10V
Pulsed drain current: 23A
Mounting: SMD
Case: PG-HSOF-8-3
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A
Gate current: 7.7mA
Drain-source voltage: 600V
Drain current: 12.5A
On-state resistance: 0.19Ω
Type of transistor: N-JFET
Power dissipation: 55.5W
Polarisation: unipolar
Kind of package: tape
Gate charge: 3.2nC
Technology: CoolGaN™
Kind of transistor: HEMT
Kind of channel: enhancement
Gate-source voltage: -10V
Pulsed drain current: 23A
Mounting: SMD
Case: PG-HSOF-8-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 23.84 EUR |
6+ | 11.91 EUR |
IGU04N60TAKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO251
Type of transistor: IGBT
Power dissipation: 42W
Case: TO251
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Turn-on time: 21ns
Turn-off time: 207ns
Collector current: 4A
Pulsed collector current: 12A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO251
Type of transistor: IGBT
Power dissipation: 42W
Case: TO251
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Turn-on time: 21ns
Turn-off time: 207ns
Collector current: 4A
Pulsed collector current: 12A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 181 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.3 EUR |
66+ | 1.09 EUR |
92+ | 0.78 EUR |
97+ | 0.74 EUR |
1800+ | 0.71 EUR |
IGW100N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
IGW100N60H3 THT IGBT transistors
IGW100N60H3 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGW15N120H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 217W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 217W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4 EUR |
24+ | 3.07 EUR |
26+ | 2.8 EUR |
IGW20N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 170W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Manufacturer series: H3
Collector current: 20A
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 170W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Manufacturer series: H3
Collector current: 20A
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.78 EUR |
23+ | 3.23 EUR |
24+ | 3 EUR |
32+ | 2.26 EUR |
34+ | 2.14 EUR |
35+ | 2.1 EUR |
120+ | 2.06 EUR |
IGW25N120H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 174 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.45 EUR |
17+ | 4.4 EUR |
18+ | 4.16 EUR |
30+ | 3.99 EUR |
IGW25T120FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 190W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Mounting: THT
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 190W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Mounting: THT
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 53 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.62 EUR |
21+ | 3.55 EUR |
22+ | 3.35 EUR |
IGW30N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Mounting: THT
Collector current: 30A
Kind of package: tube
Type of transistor: IGBT
Collector-emitter voltage: 600V
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Mounting: THT
Collector current: 30A
Kind of package: tube
Type of transistor: IGBT
Collector-emitter voltage: 600V
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 442 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.23 EUR |
23+ | 3.17 EUR |
28+ | 2.57 EUR |
30+ | 2.43 EUR |
31+ | 2.35 EUR |
IGW30N60TFKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.29 EUR |
19+ | 3.93 EUR |
29+ | 2.53 EUR |
30+ | 2.4 EUR |
120+ | 2.36 EUR |
IGW30N65L5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 44ns
Turn-off time: 359ns
Pulsed collector current: 120A
Collector current: 62A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 44ns
Turn-off time: 359ns
Pulsed collector current: 120A
Collector current: 62A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGW40N120H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 7.99 EUR |
13+ | 5.51 EUR |
14+ | 5.21 EUR |
30+ | 5.03 EUR |
90+ | 5 EUR |
IGW40N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 306W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 40A
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 306W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 40A
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.28 EUR |
19+ | 3.78 EUR |
20+ | 3.58 EUR |
30+ | 3.43 EUR |
IGW40N65F5FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 114 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.02 EUR |
21+ | 3.55 EUR |
26+ | 2.77 EUR |
28+ | 2.62 EUR |
240+ | 2.52 EUR |
IGW40N65H5FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.72 EUR |
23+ | 3.25 EUR |
24+ | 3.07 EUR |
IGW40T120FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 126 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 8.99 EUR |
11+ | 6.88 EUR |
12+ | 6.49 EUR |
IGW50N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.35 EUR |
17+ | 4.29 EUR |
18+ | 4.05 EUR |
30+ | 3.96 EUR |
120+ | 3.9 EUR |
IGW50N60TFKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 64A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 64A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 135 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.22 EUR |
17+ | 4.23 EUR |
18+ | 3.99 EUR |
30+ | 3.85 EUR |
IGW50N65F5FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 270W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 270W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGW50N65H5FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGW60N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 60A
Pulsed collector current: 180A
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 60A
Pulsed collector current: 180A
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 97 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.85 EUR |
12+ | 6.29 EUR |
13+ | 5.95 EUR |
IGW75N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 75A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 75A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGW75N60TFKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 75A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 75A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 196 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.74 EUR |
15+ | 4.93 EUR |
16+ | 4.66 EUR |
30+ | 4.49 EUR |
IGW75N65H5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 160nC
Turn-on time: 61ns
Turn-off time: 215ns
Power dissipation: 198W
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 160nC
Turn-on time: 61ns
Turn-off time: 215ns
Power dissipation: 198W
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 23.84 EUR |
5+ | 14.3 EUR |
10+ | 7.15 EUR |
30+ | 3.63 EUR |
IGZ100N65H5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
IGZ100N65H5XKSA1 THT IGBT transistors
IGZ100N65H5XKSA1 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGZ50N65H5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 27ns
Turn-off time: 271ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 27ns
Turn-off time: 271ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGZ75N65H5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4
Type of transistor: IGBT
Case: TO247-4
Mounting: THT
Kind of package: tube
Gate charge: 166nC
Turn-on time: 37ns
Turn-off time: 415ns
Power dissipation: 197W
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4
Type of transistor: IGBT
Case: TO247-4
Mounting: THT
Kind of package: tube
Gate charge: 166nC
Turn-on time: 37ns
Turn-off time: 415ns
Power dissipation: 197W
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IHW15N120E1XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 62.2W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ RC
Kind of package: tube
Turn-on time: 1940ns
Gate charge: 90nC
Turn-off time: 1450ns
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 62.2W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 62.2W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ RC
Kind of package: tube
Turn-on time: 1940ns
Gate charge: 90nC
Turn-off time: 1450ns
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 62.2W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 87 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.9 EUR |
40+ | 1.79 EUR |
43+ | 1.69 EUR |
120+ | 1.67 EUR |
240+ | 1.63 EUR |
IHW15N120R3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 127W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ RC
Kind of package: tube
Gate charge: 165nC
Turn-off time: 346ns
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 127W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 127W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ RC
Kind of package: tube
Gate charge: 165nC
Turn-off time: 346ns
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 127W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 76 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.16 EUR |
29+ | 2.47 EUR |
31+ | 2.33 EUR |
IHW20N120R5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 144W
Case: TO247-3
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 144W
Case: TO247-3
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 64 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.39 EUR |
22+ | 3.35 EUR |
24+ | 3.05 EUR |
IHW20N135R5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.55 EUR |
33+ | 2.2 EUR |
35+ | 2.09 EUR |
60+ | 2.04 EUR |
120+ | 2 EUR |
IHW20N65R5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 97nC
Turn-off time: 257ns
Anzahl je Verpackung: 240 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 97nC
Turn-off time: 257ns
Anzahl je Verpackung: 240 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IHW25N120E1XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 2004ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 2004ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 192 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.76 EUR |
27+ | 2.69 EUR |
29+ | 2.55 EUR |
60+ | 2.47 EUR |
120+ | 2.43 EUR |
IHW30N110R3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
IHW30N110R3 THT IGBT transistors
IHW30N110R3 THT IGBT transistors
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 23.84 EUR |
5+ | 14.3 EUR |
13+ | 5.51 EUR |
30+ | 3.86 EUR |
IHW30N120R5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 363ns
Technology: TRENCHSTOP™ RC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 363ns
Technology: TRENCHSTOP™ RC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.2 EUR |
28+ | 2.62 EUR |
29+ | 2.47 EUR |
IHW30N135R5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 680ns
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 680ns
Technology: TRENCHSTOP™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.42 EUR |
31+ | 2.3 EUR |
IHW30N160R5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.6kV
Collector current: 39A
Power dissipation: 131.5W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Turn-off time: 411ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.6kV
Collector current: 39A
Power dissipation: 131.5W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Turn-off time: 411ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
auf Bestellung 267 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.06 EUR |
18+ | 4.13 EUR |
19+ | 3.9 EUR |
30+ | 3.76 EUR |
IHW30N65R5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-off time: 228ns
Pulsed collector current: 90A
Collector current: 30A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-off time: 228ns
Pulsed collector current: 90A
Collector current: 30A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IHW40N120R5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.53 EUR |
16+ | 4.75 EUR |
21+ | 3.55 EUR |
22+ | 3.35 EUR |
30+ | 3.22 EUR |
IHW40N135R5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 183 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 5.96 EUR |
14+ | 5.29 EUR |
20+ | 3.76 EUR |
21+ | 3.55 EUR |
30+ | 3.47 EUR |
60+ | 3.42 EUR |
IHW40N60RFKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 40A; 152W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 152W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-off time: 217ns
Collector current: 40A
Gate-emitter voltage: ±20V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 40A; 152W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 152W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-off time: 217ns
Collector current: 40A
Gate-emitter voltage: ±20V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IHW40N65R5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 152W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 152W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 273ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 152W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 152W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 273ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IHW40N65R6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.29 EUR |
26+ | 2.82 EUR |
27+ | 2.66 EUR |
30+ | 2.63 EUR |
IHW50N65R5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Turn-on time: 50ns
Turn-off time: 218ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Turn-on time: 50ns
Turn-off time: 218ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 186 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.85 EUR |
16+ | 4.65 EUR |
17+ | 4.39 EUR |
IKA06N60TXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
IKA06N60T THT IGBT transistors
IKA06N60T THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKA10N60TXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7.2A; 30W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 30W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 67nC
Turn-on time: 20ns
Turn-off time: 250ns
Collector current: 7.2A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7.2A; 30W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 30W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 67nC
Turn-on time: 20ns
Turn-off time: 250ns
Collector current: 7.2A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKA10N65ET6XKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 20W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 27nC
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 42.5A
Collector-emitter voltage: 650V
Manufacturer series: T6
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 20W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 27nC
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 42.5A
Collector-emitter voltage: 650V
Manufacturer series: T6
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 103 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.93 EUR |
41+ | 1.77 EUR |
49+ | 1.47 EUR |
52+ | 1.4 EUR |
500+ | 1.34 EUR |
IKA15N60TXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10.6A; 35.7W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 35.7W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector current: 10.6A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 28ns
Turn-off time: 238ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10.6A; 35.7W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 35.7W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector current: 10.6A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 28ns
Turn-off time: 238ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKA15N65ET6XKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 11A; 22W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 22W
Case: TO220FP
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 57.5A
Collector-emitter voltage: 650V
Turn-on time: 50ns
Turn-off time: 202ns
Collector current: 11A
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: T6
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 11A; 22W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 22W
Case: TO220FP
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 57.5A
Collector-emitter voltage: 650V
Turn-on time: 50ns
Turn-off time: 202ns
Collector current: 11A
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: T6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
10+ | 7.15 EUR |
11+ | 6.51 EUR |
29+ | 2.46 EUR |
250+ | 1.49 EUR |
IKB06N60TATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
IKB06N60TATMA1 SMD IGBT transistors
IKB06N60TATMA1 SMD IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKB10N60TATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 62nC
Turn-on time: 20ns
Turn-off time: 253ns
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 62nC
Turn-on time: 20ns
Turn-off time: 253ns
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 659 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
30+ | 2.4 EUR |
39+ | 1.87 EUR |
44+ | 1.66 EUR |
46+ | 1.56 EUR |
50+ | 1.5 EUR |
IKB15N60TATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: SMD
Kind of package: reel; tape
Technology: TRENCHSTOP™
Turn-on time: 28ns
Gate charge: 87nC
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Power dissipation: 130W
Collector-emitter voltage: 600V
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: SMD
Kind of package: reel; tape
Technology: TRENCHSTOP™
Turn-on time: 28ns
Gate charge: 87nC
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Power dissipation: 130W
Collector-emitter voltage: 600V
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 812 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.13 EUR |
27+ | 2.66 EUR |
28+ | 2.62 EUR |
30+ | 2.39 EUR |
31+ | 2.37 EUR |
IKB15N65EH5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 38nC
Turn-on time: 33ns
Turn-off time: 172ns
Power dissipation: 52.5W
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 38nC
Turn-on time: 33ns
Turn-off time: 172ns
Power dissipation: 52.5W
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKB20N60H3ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 36ns
Turn-off time: 205ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 36ns
Turn-off time: 205ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKB20N60TATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 166W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 28A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 166W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 28A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKB20N65EH5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Gate charge: 48nC
Turn-off time: 183ns
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Gate charge: 48nC
Turn-off time: 183ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 919 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 3.98 EUR |
25+ | 2.9 EUR |
26+ | 2.76 EUR |
27+ | 2.75 EUR |
100+ | 2.63 EUR |
IKB30N65EH5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 52ns
Turn-off time: 184ns
Pulsed collector current: 120A
Collector current: 35A
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 52ns
Turn-off time: 184ns
Pulsed collector current: 120A
Collector current: 35A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKB30N65ES5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 29ns
Turn-off time: 154ns
Pulsed collector current: 120A
Collector current: 39.5A
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 29ns
Turn-off time: 154ns
Pulsed collector current: 120A
Collector current: 39.5A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKB40N65EF5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 56ns
Turn-off time: 212ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 56ns
Turn-off time: 212ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH