Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (128358) > Seite 2136 nach 2140
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| TLS205B0EJV50XUMA1 | INFINEON TECHNOLOGIES |
 Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| SIDC105D120H8X1SA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching Type of diode: switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| AUIRF7799L2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IHW25N140R5LXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.4kV; 45A; 123W; TO247-3 Mounting: THT Collector-emitter voltage: 1.4kV Power dissipation: 123W Gate charge: 150nC Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Pulsed collector current: 75A Type of transistor: IGBT Kind of package: tube Case: TO247-3 Gate-emitter voltage: ±20V Collector current: 45A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IHW20N140R5LXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.4kV; 38A; 106W; TO247-3 Mounting: THT Collector-emitter voltage: 1.4kV Power dissipation: 106W Gate charge: 125nC Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Pulsed collector current: 60A Type of transistor: IGBT Kind of package: tube Case: TO247-3 Gate-emitter voltage: ±20V Collector current: 38A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IHW40N140R5LXKSA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.4kV; 80A; 366W; TO247-3 Mounting: THT Collector-emitter voltage: 1.4kV Power dissipation: 366W Gate charge: 260nC Pulsed collector current: 120A Type of transistor: IGBT Case: TO247-3 Gate-emitter voltage: ±20V Collector current: 80A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IHW30N140R5LXKSA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.4kV; 80A; 306W; TO247-3 Mounting: THT Collector-emitter voltage: 1.4kV Power dissipation: 306W Gate charge: 0.21µC Pulsed collector current: 90A Type of transistor: IGBT Case: TO247-3 Gate-emitter voltage: ±20V Collector current: 80A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| TLE49462LHALA1 | INFINEON TECHNOLOGIES |
Category: Hall Sensors Description: Sensor: Hall Type of sensor: Hall |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| TLE4998P8XUMA1 | INFINEON TECHNOLOGIES |
Category: Hall Sensors Description: Sensor: Hall; programmable; SMT; Temp: -40÷125°C Type of sensor: Hall Kind of sensor: programmable Mounting: SMT Operating temperature: -40...125°C |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| TLE493D-W2B6 A2 | INFINEON TECHNOLOGIES |
Category: Hall Sensors Description: Sensor: Hall Type of sensor: Hall |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 23 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPD042P03L3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -280A; 150W Type of transistor: P-MOSFET Technology: OptiMOS™ P3 Polarisation: unipolar Drain-source voltage: -30V Drain current: -70A Pulsed drain current: -280A Power dissipation: 150W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FF400R06KE3HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; Ic: 500A; 62MM; 1.25kW; Field Stop,Trench; screw Type of semiconductor module: IGBT Collector current: 500A Case: 62MM Gate-emitter voltage: ±20V Power dissipation: 1.25kW Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IHW30N160R5 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.6kV; 60A; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.6kV Collector current: 60A Case: TO247 Gate-emitter voltage: ±20V |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 14 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY9BF118TBGL-GK7E1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller Type of integrated circuit: microcontroller |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1520 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY27410FLTXI | INFINEON TECHNOLOGIES |
Category: Supervisor circuits Description: IC: supervisor circuit Type of integrated circuit: supervisor circuit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 260 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY27410FLTXIT | INFINEON TECHNOLOGIES |
Category: Supervisor circuits Description: IC: supervisor circuit Type of integrated circuit: supervisor circuit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPP120N08S403AKSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPP120N08S4-03 | INFINEON TECHNOLOGIES |
Category: Transistors - Unclassified Description: IPP120N08S4-03 |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 13 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BTS142D | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 4.6A; Ch: 1; N-Channel; SMD; TO252-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 4.6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-3 On-state resistance: 23mΩ Kind of package: reel; tape Technology: HITFET® Output voltage: 42V Power dissipation: 59W |
auf Bestellung 677 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPB180P04P4L02ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -140A; Idm: -720A; 150W Type of transistor: P-MOSFET Technology: OptiMOS™ P2 Polarisation: unipolar Drain-source voltage: -40V Drain current: -140A Pulsed drain current: -720A Power dissipation: 150W Case: PG-TO263-7 Gate-source voltage: -16...5V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPB120P04P4L-03 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; -40V; -120A; D2PAK Type of transistor: P-MOSFET Drain-source voltage: -40V Drain current: -120A Case: D2PAK On-state resistance: 3.1mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 947 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 18 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPD90P04P4L-04 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; -40V; -90A; Idm: -360A; DPAK,TO252 Type of transistor: P-MOSFET Drain-source voltage: -40V Drain current: -90A Pulsed drain current: -360A Case: DPAK; TO252 On-state resistance: 4.3mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 2447 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 24 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IR35217MTRPBF | INFINEON TECHNOLOGIES |
Category: Battery and battery cells controllers Description: IC: PMIC Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPW65R035CFD7AXKSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPW60R041P6 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 600V; 77.5A; Idm: 267A; 481W; TO247-3 Type of transistor: N-MOSFET Drain-source voltage: 600V Drain current: 77.5A Power dissipation: 481W Case: TO247-3 Gate-source voltage: ±20V Mounting: THT Kind of channel: enhancement Pulsed drain current: 267A Gate charge: 170nC |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPD80R360P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO252-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.6A Power dissipation: 84W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: SMD Kind of channel: enhancement Gate charge: 30nC Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPW80R360P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO247-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.6A Power dissipation: 84W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Kind of channel: enhancement Gate charge: 30nC Version: ESD Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPN60R360P7S | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 600V; 9A; Idm: 26A; SOT223 Type of transistor: N-MOSFET Drain-source voltage: 600V Drain current: 9A Case: SOT223 On-state resistance: 0.36Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 26A Gate charge: 13nC |
auf Bestellung 2987 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 89 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPP030N10N5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; TO220-3 Mounting: THT Power dissipation: 250W Gate charge: 112nC Polarisation: unipolar Drain current: 120A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Case: TO220-3 On-state resistance: 3mΩ |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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ISP772T | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2.6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 50mΩ Supply voltage: 5...34V DC Technology: Industrial PROFET |
auf Bestellung 1067 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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ISP742RI | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 Supply voltage: 5...34V DC Technology: Industrial PROFET |
auf Bestellung 1368 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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ISP762T | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 Supply voltage: 5...34V DC Technology: Industrial PROFET On-state resistance: 70mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ITS4075QEPDXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 4.1A; Ch: 4; N-Channel; SMD; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 4.1A Number of channels: 4 Kind of output: N-Channel Mounting: SMD Case: PG-TSDSO-14 Supply voltage: 5...45V DC Technology: Industrial PROFET Power dissipation: 1.9W Operating temperature: -40...150°C Turn-on time: 0.1ms Kind of package: reel; tape Turn-off time: 0.1ms On-state resistance: 75mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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ISP742RIFUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 Supply voltage: 5...34V DC Technology: Industrial PROFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| ITS4040DEPDXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 4.1A; Ch: 2; N-Channel; SMD; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 4.1A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: PG-TSDSO-14 Supply voltage: 5...45V DC Technology: Industrial PROFET Power dissipation: 1.9W Operating temperature: -40...150°C Turn-on time: 0.1ms Kind of package: reel; tape Turn-off time: 0.1ms On-state resistance: 40mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| ITS4090QEPDXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.5A; Ch: 4; N-Channel; SMD; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.5A Number of channels: 4 Kind of output: N-Channel Mounting: SMD Case: PG-TSDSO-14 Supply voltage: 5...45V DC Technology: Industrial PROFET Power dissipation: 1.8W Operating temperature: -40...150°C Turn-on time: 75µs Kind of package: reel; tape Turn-off time: 75µs On-state resistance: 90mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| T830N12TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 1.5kA; 844A; Igt: 250mA Max. forward impulse current: 14.5A Gate current: 250mA Features of semiconductor devices: phase control thyristor (PCT) Max. off-state voltage: 1.2kV Body dimensions: Ø58/Ø36mm Load current: 844A Max. load current: 1.5kA Kind of package: in-tray Case: BG-T5814K0-1 Type of thyristor: hockey-puck Mounting: Press-Pack |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| T830N14TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 1.5kA; 844A; Igt: 250mA Max. forward impulse current: 14.5kA Gate current: 250mA Features of semiconductor devices: phase control thyristor (PCT) Max. off-state voltage: 1.4kV Body dimensions: Ø58/Ø36mm Load current: 844A Max. load current: 1.5kA Kind of package: in-tray Case: BG-T5814K0-1 Type of thyristor: hockey-puck Mounting: Press-Pack |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| T830N16TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 1.5kA; 844A; Igt: 250mA Max. forward impulse current: 14.5kA Gate current: 250mA Features of semiconductor devices: phase control thyristor (PCT) Max. off-state voltage: 1.6kV Body dimensions: Ø58/Ø36mm Load current: 844A Max. load current: 1.5kA Kind of package: in-tray Case: BG-T5814K0-1 Type of thyristor: hockey-puck Mounting: Press-Pack |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FP30R06W1E3B11BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; NTC thermistor; AG-EASY1B-2; Inverter; 115W Type of semiconductor module: IGBT Topology: NTC thermistor Case: AG-EASY1B-2 Application: Inverter Gate-emitter voltage: ±20V Power dissipation: 115W Technology: Field Stop; Trench |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 24 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FP30R06W1E3BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; NTC thermistor; Ic: 30A; AG-EASY1B-1; Inverter; screw Type of semiconductor module: IGBT Topology: NTC thermistor Case: AG-EASY1B-1 Application: Inverter Gate-emitter voltage: ±20V Power dissipation: 115W Technology: Field Stop; Trench Collector current: 30A Electrical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 24 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPW60R170CFD7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 75W; PG-TO247-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 75W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.325Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 28nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPA60R099P7XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPZ60R099P6FKSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPU80R1K4P7AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; IPAK; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Power dissipation: 32W Case: IPAK Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Kind of channel: enhancement Version: ESD Gate charge: 10nC Kind of package: tube |
auf Bestellung 1084 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPLK80R1K4P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 800V; 4A; Idm: 8.9A; 37W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: CoolMOS™ Drain-source voltage: 800V Drain current: 4A Power dissipation: 37W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 8.9A Gate charge: 10nC |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPA80R1K4P7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 800V; 4A; 24W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Drain-source voltage: 800V Drain current: 4A Power dissipation: 24W Case: PG-TO220-3 Gate-source voltage: ±20V Mounting: THT Kind of channel: enhancement Gate charge: 10nC |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 48 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IRFSL7437PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 1kA; 230W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 230W Case: TO262 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 1kA |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IFCM10P60GDXKMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 280 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BC859CE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP Type of transistor: PNP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BSS126 H6327 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 600V; 21mA; 500mW; SOT23-3; ESD Type of transistor: N-MOSFET Drain-source voltage: 600V Drain current: 21mA Power dissipation: 0.5W Case: SOT23-3 Gate-source voltage: ±20V Mounting: SMD Gate charge: 1.4nC Version: ESD Application: automotive industry |
auf Bestellung 5330 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 238 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BTN8982TAAUMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BFP460H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343 Type of transistor: NPN Technology: SIEGET™ Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 4.5V Collector current: 70mA Power dissipation: 0.23W Case: SOT343 Mounting: SMD Kind of package: reel; tape Frequency: 22GHz Current gain: 90...160 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BFP405H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343 Type of transistor: NPN Technology: SIEGET™ Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 4.5V Collector current: 25mA Power dissipation: 75mW Case: SOT343 Mounting: SMD Kind of package: reel; tape Frequency: 25GHz Current gain: 90...130 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BFP405H6740XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN Type of transistor: NPN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BFP410H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 4.5V; 40mA; 150mW; SOT343 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 4.5V Collector current: 40mA Power dissipation: 0.15W Case: SOT343 Mounting: SMD Frequency: 25GHz Application: automotive industry Current gain: 60 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BFP 420 H6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 4.5V; SOT343 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 4.5V Case: SOT343 Mounting: SMD Frequency: 25GHz |
auf Bestellung 8880 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 210 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BFP 620 H7764 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80mA; SOT343 Type of transistor: NPN Polarisation: bipolar Collector current: 80mA Case: SOT343 Current gain: 110 Mounting: SMD Frequency: 65GHz |
auf Bestellung 2980 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 177 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BFP 640 H6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50mA; 200mW; SOT343 Type of transistor: NPN Polarisation: bipolar Collector current: 50mA Power dissipation: 0.2W Case: SOT343 Current gain: 110 Mounting: SMD Frequency: 40GHz |
auf Bestellung 3004 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 218 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
IMZA65R048M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 100A Power dissipation: 125W Case: TO247-4 Gate-source voltage: -5...23V On-state resistance: 63mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
auf Bestellung 162 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TLS205B0EJV50XUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIDC105D120H8X1SA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AUIRF7799L2TR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IHW25N140R5LXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.4kV; 45A; 123W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.4kV
Power dissipation: 123W
Gate charge: 150nC
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Pulsed collector current: 75A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 45A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.4kV; 45A; 123W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.4kV
Power dissipation: 123W
Gate charge: 150nC
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Pulsed collector current: 75A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 45A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IHW20N140R5LXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.4kV; 38A; 106W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.4kV
Power dissipation: 106W
Gate charge: 125nC
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Pulsed collector current: 60A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 38A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.4kV; 38A; 106W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.4kV
Power dissipation: 106W
Gate charge: 125nC
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Pulsed collector current: 60A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 38A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IHW40N140R5LXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.4kV; 80A; 366W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.4kV
Power dissipation: 366W
Gate charge: 260nC
Pulsed collector current: 120A
Type of transistor: IGBT
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 80A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.4kV; 80A; 366W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.4kV
Power dissipation: 366W
Gate charge: 260nC
Pulsed collector current: 120A
Type of transistor: IGBT
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 80A
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IHW30N140R5LXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.4kV; 80A; 306W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.4kV
Power dissipation: 306W
Gate charge: 0.21µC
Pulsed collector current: 90A
Type of transistor: IGBT
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 80A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.4kV; 80A; 306W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.4kV
Power dissipation: 306W
Gate charge: 0.21µC
Pulsed collector current: 90A
Type of transistor: IGBT
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 80A
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE49462LHALA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
| TLE4998P8XUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; programmable; SMT; Temp: -40÷125°C
Type of sensor: Hall
Kind of sensor: programmable
Mounting: SMT
Operating temperature: -40...125°C
Category: Hall Sensors
Description: Sensor: Hall; programmable; SMT; Temp: -40÷125°C
Type of sensor: Hall
Kind of sensor: programmable
Mounting: SMT
Operating temperature: -40...125°C
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| TLE493D-W2B6 A2 |
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD042P03L3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -280A; 150W
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -70A
Pulsed drain current: -280A
Power dissipation: 150W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -280A; 150W
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -70A
Pulsed drain current: -280A
Power dissipation: 150W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FF400R06KE3HOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; Ic: 500A; 62MM; 1.25kW; Field Stop,Trench; screw
Type of semiconductor module: IGBT
Collector current: 500A
Case: 62MM
Gate-emitter voltage: ±20V
Power dissipation: 1.25kW
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; Ic: 500A; 62MM; 1.25kW; Field Stop,Trench; screw
Type of semiconductor module: IGBT
Collector current: 500A
Case: 62MM
Gate-emitter voltage: ±20V
Power dissipation: 1.25kW
Technology: Field Stop; Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IHW30N160R5 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 60A; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.6kV
Collector current: 60A
Case: TO247
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 60A; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.6kV
Collector current: 60A
Case: TO247
Gate-emitter voltage: ±20V
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
| CY9BF118TBGL-GK7E1 |
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Produkt ist nicht verfügbar
Mindestbestellmenge: 1520 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY27410FLTXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Supervisor circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
Category: Supervisor circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
Produkt ist nicht verfügbar
Mindestbestellmenge: 260 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY27410FLTXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Supervisor circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
Category: Supervisor circuits
Description: IC: supervisor circuit
Type of integrated circuit: supervisor circuit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPP120N08S403AKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPP120N08S4-03 |
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS142D |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4.6A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 23mΩ
Kind of package: reel; tape
Technology: HITFET®
Output voltage: 42V
Power dissipation: 59W
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4.6A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 23mΩ
Kind of package: reel; tape
Technology: HITFET®
Output voltage: 42V
Power dissipation: 59W
auf Bestellung 677 Stücke:
Lieferzeit 14-21 Tag (e)
| IPB180P04P4L02ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -140A; Idm: -720A; 150W
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -140A
Pulsed drain current: -720A
Power dissipation: 150W
Case: PG-TO263-7
Gate-source voltage: -16...5V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -140A; Idm: -720A; 150W
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -140A
Pulsed drain current: -720A
Power dissipation: 150W
Case: PG-TO263-7
Gate-source voltage: -16...5V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPB120P04P4L-03 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; -40V; -120A; D2PAK
Type of transistor: P-MOSFET
Drain-source voltage: -40V
Drain current: -120A
Case: D2PAK
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; -40V; -120A; D2PAK
Type of transistor: P-MOSFET
Drain-source voltage: -40V
Drain current: -120A
Case: D2PAK
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 947 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD90P04P4L-04 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; -40V; -90A; Idm: -360A; DPAK,TO252
Type of transistor: P-MOSFET
Drain-source voltage: -40V
Drain current: -90A
Pulsed drain current: -360A
Case: DPAK; TO252
On-state resistance: 4.3mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; -40V; -90A; Idm: -360A; DPAK,TO252
Type of transistor: P-MOSFET
Drain-source voltage: -40V
Drain current: -90A
Pulsed drain current: -360A
Case: DPAK; TO252
On-state resistance: 4.3mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2447 Stücke:
Lieferzeit 14-21 Tag (e)
| IR35217MTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Battery and battery cells controllers
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Battery and battery cells controllers
Description: IC: PMIC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPW65R035CFD7AXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPW60R041P6 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 77.5A; Idm: 267A; 481W; TO247-3
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: TO247-3
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 267A
Gate charge: 170nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 77.5A; Idm: 267A; 481W; TO247-3
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: TO247-3
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 267A
Gate charge: 170nC
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD80R360P7ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 30nC
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 30nC
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPW80R360P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 30nC
Version: ESD
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 30nC
Version: ESD
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPN60R360P7S |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 9A; Idm: 26A; SOT223
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 9A
Case: SOT223
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 13nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 9A; Idm: 26A; SOT223
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 9A
Case: SOT223
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 13nC
auf Bestellung 2987 Stücke:
Lieferzeit 14-21 Tag (e)
| IPP030N10N5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; TO220-3
Mounting: THT
Power dissipation: 250W
Gate charge: 112nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Case: TO220-3
On-state resistance: 3mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; TO220-3
Mounting: THT
Power dissipation: 250W
Gate charge: 112nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Case: TO220-3
On-state resistance: 3mΩ
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| ISP772T |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Industrial PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Industrial PROFET
auf Bestellung 1067 Stücke:
Lieferzeit 14-21 Tag (e)
| ISP742RI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
Supply voltage: 5...34V DC
Technology: Industrial PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
Supply voltage: 5...34V DC
Technology: Industrial PROFET
auf Bestellung 1368 Stücke:
Lieferzeit 14-21 Tag (e)
| ISP762T |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
Supply voltage: 5...34V DC
Technology: Industrial PROFET
On-state resistance: 70mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
Supply voltage: 5...34V DC
Technology: Industrial PROFET
On-state resistance: 70mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ITS4075QEPDXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.1A; Ch: 4; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4.1A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
Supply voltage: 5...45V DC
Technology: Industrial PROFET
Power dissipation: 1.9W
Operating temperature: -40...150°C
Turn-on time: 0.1ms
Kind of package: reel; tape
Turn-off time: 0.1ms
On-state resistance: 75mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.1A; Ch: 4; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4.1A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
Supply voltage: 5...45V DC
Technology: Industrial PROFET
Power dissipation: 1.9W
Operating temperature: -40...150°C
Turn-on time: 0.1ms
Kind of package: reel; tape
Turn-off time: 0.1ms
On-state resistance: 75mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ISP742RIFUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
Supply voltage: 5...34V DC
Technology: Industrial PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
Supply voltage: 5...34V DC
Technology: Industrial PROFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ITS4040DEPDXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.1A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4.1A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
Supply voltage: 5...45V DC
Technology: Industrial PROFET
Power dissipation: 1.9W
Operating temperature: -40...150°C
Turn-on time: 0.1ms
Kind of package: reel; tape
Turn-off time: 0.1ms
On-state resistance: 40mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.1A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4.1A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
Supply voltage: 5...45V DC
Technology: Industrial PROFET
Power dissipation: 1.9W
Operating temperature: -40...150°C
Turn-on time: 0.1ms
Kind of package: reel; tape
Turn-off time: 0.1ms
On-state resistance: 40mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ITS4090QEPDXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 4; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
Supply voltage: 5...45V DC
Technology: Industrial PROFET
Power dissipation: 1.8W
Operating temperature: -40...150°C
Turn-on time: 75µs
Kind of package: reel; tape
Turn-off time: 75µs
On-state resistance: 90mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 4; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
Supply voltage: 5...45V DC
Technology: Industrial PROFET
Power dissipation: 1.8W
Operating temperature: -40...150°C
Turn-on time: 75µs
Kind of package: reel; tape
Turn-off time: 75µs
On-state resistance: 90mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| T830N12TOFXPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 1.5kA; 844A; Igt: 250mA
Max. forward impulse current: 14.5A
Gate current: 250mA
Features of semiconductor devices: phase control thyristor (PCT)
Max. off-state voltage: 1.2kV
Body dimensions: Ø58/Ø36mm
Load current: 844A
Max. load current: 1.5kA
Kind of package: in-tray
Case: BG-T5814K0-1
Type of thyristor: hockey-puck
Mounting: Press-Pack
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 1.5kA; 844A; Igt: 250mA
Max. forward impulse current: 14.5A
Gate current: 250mA
Features of semiconductor devices: phase control thyristor (PCT)
Max. off-state voltage: 1.2kV
Body dimensions: Ø58/Ø36mm
Load current: 844A
Max. load current: 1.5kA
Kind of package: in-tray
Case: BG-T5814K0-1
Type of thyristor: hockey-puck
Mounting: Press-Pack
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| T830N14TOFXPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 1.5kA; 844A; Igt: 250mA
Max. forward impulse current: 14.5kA
Gate current: 250mA
Features of semiconductor devices: phase control thyristor (PCT)
Max. off-state voltage: 1.4kV
Body dimensions: Ø58/Ø36mm
Load current: 844A
Max. load current: 1.5kA
Kind of package: in-tray
Case: BG-T5814K0-1
Type of thyristor: hockey-puck
Mounting: Press-Pack
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 1.5kA; 844A; Igt: 250mA
Max. forward impulse current: 14.5kA
Gate current: 250mA
Features of semiconductor devices: phase control thyristor (PCT)
Max. off-state voltage: 1.4kV
Body dimensions: Ø58/Ø36mm
Load current: 844A
Max. load current: 1.5kA
Kind of package: in-tray
Case: BG-T5814K0-1
Type of thyristor: hockey-puck
Mounting: Press-Pack
Produkt ist nicht verfügbar
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| T830N16TOFXPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 1.5kA; 844A; Igt: 250mA
Max. forward impulse current: 14.5kA
Gate current: 250mA
Features of semiconductor devices: phase control thyristor (PCT)
Max. off-state voltage: 1.6kV
Body dimensions: Ø58/Ø36mm
Load current: 844A
Max. load current: 1.5kA
Kind of package: in-tray
Case: BG-T5814K0-1
Type of thyristor: hockey-puck
Mounting: Press-Pack
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 1.5kA; 844A; Igt: 250mA
Max. forward impulse current: 14.5kA
Gate current: 250mA
Features of semiconductor devices: phase control thyristor (PCT)
Max. off-state voltage: 1.6kV
Body dimensions: Ø58/Ø36mm
Load current: 844A
Max. load current: 1.5kA
Kind of package: in-tray
Case: BG-T5814K0-1
Type of thyristor: hockey-puck
Mounting: Press-Pack
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FP30R06W1E3B11BOMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; AG-EASY1B-2; Inverter; 115W
Type of semiconductor module: IGBT
Topology: NTC thermistor
Case: AG-EASY1B-2
Application: Inverter
Gate-emitter voltage: ±20V
Power dissipation: 115W
Technology: Field Stop; Trench
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; AG-EASY1B-2; Inverter; 115W
Type of semiconductor module: IGBT
Topology: NTC thermistor
Case: AG-EASY1B-2
Application: Inverter
Gate-emitter voltage: ±20V
Power dissipation: 115W
Technology: Field Stop; Trench
Produkt ist nicht verfügbar
Mindestbestellmenge: 24 Stücke
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Stück im Wert von UAH
| FP30R06W1E3BOMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 30A; AG-EASY1B-1; Inverter; screw
Type of semiconductor module: IGBT
Topology: NTC thermistor
Case: AG-EASY1B-1
Application: Inverter
Gate-emitter voltage: ±20V
Power dissipation: 115W
Technology: Field Stop; Trench
Collector current: 30A
Electrical mounting: screw
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 30A; AG-EASY1B-1; Inverter; screw
Type of semiconductor module: IGBT
Topology: NTC thermistor
Case: AG-EASY1B-1
Application: Inverter
Gate-emitter voltage: ±20V
Power dissipation: 115W
Technology: Field Stop; Trench
Collector current: 30A
Electrical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 24 Stücke
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| IPW60R170CFD7 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 75W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 75W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 28nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 75W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 75W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 28nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPA60R099P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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Stück im Wert von UAH
| IPZ60R099P6FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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Stück im Wert von UAH
| IPU80R1K4P7AKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Gate charge: 10nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Gate charge: 10nC
Kind of package: tube
auf Bestellung 1084 Stücke:
Lieferzeit 14-21 Tag (e)
| IPLK80R1K4P7ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 800V; 4A; Idm: 8.9A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 8.9A
Gate charge: 10nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 800V; 4A; Idm: 8.9A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 8.9A
Gate charge: 10nC
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| IPA80R1K4P7 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 800V; 4A; 24W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 24W
Case: PG-TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Gate charge: 10nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 800V; 4A; 24W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 24W
Case: PG-TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Gate charge: 10nC
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFSL7437PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 1kA; 230W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 1kA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 1kA; 230W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 1kA
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
| IFCM10P60GDXKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: IC: driver
Type of integrated circuit: driver
Category: SMD IGBT transistors
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Mindestbestellmenge: 280 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC859CE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSS126 H6327 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 21mA; 500mW; SOT23-3; ESD
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23-3
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 1.4nC
Version: ESD
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 21mA; 500mW; SOT23-3; ESD
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23-3
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 1.4nC
Version: ESD
Application: automotive industry
auf Bestellung 5330 Stücke:
Lieferzeit 14-21 Tag (e)
| BTN8982TAAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BFP460H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 70mA
Power dissipation: 0.23W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 22GHz
Current gain: 90...160
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 70mA
Power dissipation: 0.23W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 22GHz
Current gain: 90...160
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BFP405H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 25mA
Power dissipation: 75mW
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Current gain: 90...130
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 25mA
Power dissipation: 75mW
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Current gain: 90...130
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BFP405H6740XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BFP410H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 4.5V; 40mA; 150mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 4.5V
Collector current: 40mA
Power dissipation: 0.15W
Case: SOT343
Mounting: SMD
Frequency: 25GHz
Application: automotive industry
Current gain: 60
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 4.5V; 40mA; 150mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 4.5V
Collector current: 40mA
Power dissipation: 0.15W
Case: SOT343
Mounting: SMD
Frequency: 25GHz
Application: automotive industry
Current gain: 60
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BFP 420 H6327 |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 4.5V; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 4.5V
Case: SOT343
Mounting: SMD
Frequency: 25GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 4.5V; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 4.5V
Case: SOT343
Mounting: SMD
Frequency: 25GHz
auf Bestellung 8880 Stücke:
Lieferzeit 14-21 Tag (e)
| BFP 620 H7764 |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80mA; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector current: 80mA
Case: SOT343
Current gain: 110
Mounting: SMD
Frequency: 65GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80mA; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector current: 80mA
Case: SOT343
Current gain: 110
Mounting: SMD
Frequency: 65GHz
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)
| BFP 640 H6327 |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50mA; 200mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT343
Current gain: 110
Mounting: SMD
Frequency: 40GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50mA; 200mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT343
Current gain: 110
Mounting: SMD
Frequency: 40GHz
auf Bestellung 3004 Stücke:
Lieferzeit 14-21 Tag (e)
| IMZA65R048M1HXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)