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IRF1010NSPBF IRF1010NSPBF Infineon Technologies Infineon-IRF1010NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee33da90638 description Description: MOSFET N-CH 55V 85A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
Produkt ist nicht verfügbar
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IRFI1310NPBF IRFI1310NPBF Infineon Technologies irfi1310npbf.pdf?fileId=5546d462533600a401535623bd4b1f69 Description: MOSFET N-CH 100V 24A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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IRL1004PBF IRL1004PBF Infineon Technologies irl1004pbf.pdf?fileId=5546d462533600a40153565b184224e4 Description: MOSFET N-CH 40V 130A TO220AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
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IRG4BC20SDPBF IRG4BC20SDPBF Infineon Technologies irg4bc20sdpbf.pdf?fileId=5546d462533600a40153563f5de2225f description Description: IGBT 600V 19A TO-220AB
Power - Max: 60 W
Current - Collector Pulsed (Icm): 38 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 19 A
Part Status: Obsolete
Gate Charge: 27 nC
Test Condition: 480V, 10A, 50Ohm, 15V
Switching Energy: 320µJ (on), 2.58mJ (off)
Td (on/off) @ 25°C: 62ns/690ns
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
Reverse Recovery Time (trr): 37 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRFS41N15DPBF IRFS41N15DPBF Infineon Technologies irfb41n15dpbf.pdf?fileId=5546d462533600a401535615d3b61e16 Description: MOSFET N-CH 150V 41A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 25 V
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IR2183PBF IR2183PBF Infineon Technologies infineon-ir2183-datasheet-en.pdf Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRL3103D1PBF IRL3103D1PBF Infineon Technologies irl3103d1pbf.pdf Description: MOSFET N-CH 30V 64A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V
Power Dissipation (Max): 2W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar
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IR2184PBF IR2184PBF Infineon Technologies ir2184.pdf?fileId=5546d462533600a4015355c955e616d4 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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IRL3705NPBF IRL3705NPBF Infineon Technologies irl3705npbf.pdf?fileId=5546d462533600a40153565f31232534 description Description: MOSFET N-CH 55V 89A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
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100+2.18 EUR
500+1.75 EUR
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IRL1004SPBF IRL1004SPBF Infineon Technologies irl1004spbf.pdf?fileId=5546d462533600a40153565b1f5b24e6 Description: MOSFET N-CH 40V 130A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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IRG4BC30S-SPBF IRG4BC30S-SPBF Infineon Technologies IRG4BC30S-SPbF.pdf Description: IGBT 600V 34A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRG4BC30U-SPBF IRG4BC30U-SPBF Infineon Technologies IRG4BC30U-SPbF.pdf Description: IGBT 600V 23A 100W D2PAK
Power - Max: 100 W
Current - Collector Pulsed (Icm): 92 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 23 A
Part Status: Obsolete
Gate Charge: 50 nC
Test Condition: 480V, 12A, 23Ohm, 15V
Switching Energy: 160µJ (on), 200µJ (off)
Td (on/off) @ 25°C: 17ns/78ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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IRG4BC30K-SPBF IRG4BC30K-SPBF Infineon Technologies IRG4BC30K-S.pdf description Description: IGBT 600V 28A 100W D2PAK
Power - Max: 100 W
Current - Collector Pulsed (Icm): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 28 A
Gate Charge: 67 nC
Test Condition: 480V, 16A, 23Ohm, 15V
Switching Energy: 360µJ (on), 510µJ (off)
Td (on/off) @ 25°C: 26ns/130ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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IRF1607PBF IRF1607PBF Infineon Technologies IRF1607PbF.pdf Description: MOSFET N-CH 75V 142A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 85A, 10V
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Produkt ist nicht verfügbar
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IRF2807SPBF IRF2807SPBF Infineon Technologies irf2807spbf.pdf?fileId=5546d462533600a4015355deafc518f4 description Description: MOSFET N-CH 75V 82A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
Produkt ist nicht verfügbar
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IRLI2203NPBF IRLI2203NPBF Infineon Technologies IRLI2203NPbF.pdf Description: MOSFET N-CH 30V 61A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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IRG4BC20KDPBF IRG4BC20KDPBF Infineon Technologies IRG4BC20KDPbF.pdf Description: IGBT 600V 16A TO-220AB
Part Status: Obsolete
Gate Charge: 34 nC
Test Condition: 480V, 9A, 50Ohm, 15V
Switching Energy: 340µJ (on), 300µJ (off)
Td (on/off) @ 25°C: 54ns/180ns
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
Reverse Recovery Time (trr): 37 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 60 W
Current - Collector Pulsed (Icm): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Produkt ist nicht verfügbar
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IRG4IBC20KDPBF IRG4IBC20KDPBF Infineon Technologies irg4ibc20kdpbf.pdf?fileId=5546d462533600a401535643777122ad Description: IGBT 600V 11.5A TO220AB FP
Power - Max: 34 W
Current - Collector Pulsed (Icm): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 11.5 A
Part Status: Obsolete
Gate Charge: 34 nC
Test Condition: 480V, 9A, 50Ohm, 15V
Switching Energy: 340µJ (on), 300µJ (off)
Td (on/off) @ 25°C: 54ns/180ns
Supplier Device Package: TO-220AB Full-Pak
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
Reverse Recovery Time (trr): 37 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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IRG4BC20UD-SPBF IRG4BC20UD-SPBF Infineon Technologies irg4bc20ud-spbf.pdf?fileId=5546d462533600a40153563f7f112267 Description: IGBT 600V 13A 60W D2PAK
Td (on/off) @ 25°C: 39ns/93ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Reverse Recovery Time (trr): 37 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 60 W
Current - Collector Pulsed (Icm): 52 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 13 A
Part Status: Obsolete
Gate Charge: 27 nC
Test Condition: 480V, 6.5A, 50Ohm, 15V
Switching Energy: 160µJ (on), 130µJ (off)
Produkt ist nicht verfügbar
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IRLI2910PBF IRLI2910PBF Infineon Technologies irli2910pbf.pdf?fileId=5546d462533600a401535663d07b25b5 Description: MOSFET N-CH 100V 31A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 16A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Produkt ist nicht verfügbar
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IRG4BC20MD-SPBF IRG4BC20MD-SPBF Infineon Technologies IRG4BC20MD-SPbF.pdf Description: IGBT 600V 18A 60W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 11A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 21ns/463ns
Switching Energy: 410µJ (on), 2.03mJ (off)
Test Condition: 480V, 11A, 50Ohm, 15V
Gate Charge: 39 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 60 W
Produkt ist nicht verfügbar
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IRL3705NSPBF IRL3705NSPBF Infineon Technologies Infineon-IRL3705NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fed0f9650631 description Description: MOSFET N-CH 55V 89A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
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IRF1405SPBF IRF1405SPBF Infineon Technologies IRF1405%28S%2CL%29PbF.pdf Description: MOSFET N-CH 55V 131A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
Produkt ist nicht verfügbar
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IRF1404LPBF IRF1404LPBF Infineon Technologies irf1404spbf.pdf?fileId=5546d462533600a4015355daf0f118b2 Description: MOSFET N-CH 40V 162A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Produkt ist nicht verfügbar
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IRF1405LPBF IRF1405LPBF Infineon Technologies IRF1405%28S%2CL%29PbF.pdf Description: MOSFET N-CH 55V 131A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
Produkt ist nicht verfügbar
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IRF1404SPBF IRF1404SPBF Infineon Technologies irf1404spbf.pdf?fileId=5546d462533600a4015355daf0f118b2 Description: MOSFET N-CH 40V 162A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Produkt ist nicht verfügbar
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IR2128PBF IR2128PBF Infineon Technologies ir2127.pdf?fileId=5546d462533600a4015355c868861696 Description: IC GATE DRVR HI/LOW SIDE 8DIP
Part Status: Active
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 0.8V, 3V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side or Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 80ns, 40ns
Supplier Device Package: 8-PDIP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 12V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF3415SPBF IRF3415SPBF Infineon Technologies irf3415spbf.pdf?fileId=5546d462533600a4015355df28f8191b Description: MOSFET N-CH 150V 43A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
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IRG4IBC30SPBF IRG4IBC30SPBF Infineon Technologies irg4ibc30spbf.pdf?fileId=5546d462533600a4015356439d2422b8 Description: IGBT 600V 23.5A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 23.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 47 A
Power - Max: 45 W
Produkt ist nicht verfügbar
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IRF2804PBF IRF2804PBF Infineon Technologies irf2804pbf.pdf?fileId=5546d462533600a4015355de76f818e3 Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
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50+2.56 EUR
100+2.31 EUR
500+1.87 EUR
1000+1.73 EUR
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IRFB4310PBF IRFB4310PBF Infineon Technologies irfs4310pbf.pdf?fileId=5546d462533600a40153563a0e2e21a7 Description: MOSFET N-CH 100V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 50 V
auf Bestellung 29844 Stücke:
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500+2.46 EUR
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IRFB260NPBF IRFB260NPBF Infineon Technologies infineon-irfb260n-datasheet-en.pdf Description: MOSFET N-CH 200V 56A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IR2121PBF IR2121PBF Infineon Technologies ir2121.pdf?fileId=5546d462533600a4015355c84fa31691 Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 43ns, 26ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 1.6A, 3.3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 16760 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.44 EUR
10+4.86 EUR
50+4.22 EUR
100+4.02 EUR
250+3.81 EUR
500+3.69 EUR
1000+3.58 EUR
2500+3.47 EUR
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IRG4IBC30FDPBF IRG4IBC30FDPBF Infineon Technologies IRG4IBC30FDPbF.pdf Description: IGBT 600V 20.3A 45W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 42ns/230ns
Switching Energy: 630µJ (on), 1.39mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20.3 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 45 W
Produkt ist nicht verfügbar
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IRG4BC30UDPBF IRG4BC30UDPBF Infineon Technologies IRG4BC30UDPbF.pdf Description: IGBT 600V 23A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 40ns/91ns
Switching Energy: 380µJ (on), 160µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRL2910SPBF IRL2910SPBF Infineon Technologies irl2910spbf.pdf?fileId=5546d462533600a40153565b9922250d Description: MOSFET N-CH 100V 55A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Produkt ist nicht verfügbar
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IRF3710SPBF IRF3710SPBF Infineon Technologies irf3710spbf.pdf?fileId=5546d462533600a4015355df9dff1949 Description: MOSFET N-CH 100V 57A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
Produkt ist nicht verfügbar
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IRF3205LPBF IRF3205LPBF Infineon Technologies irf3205spbf.pdf?fileId=5546d462533600a4015355defac9190c Description: MOSFET N-CH 55V 110A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
Produkt ist nicht verfügbar
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IRF3205SPBF IRF3205SPBF Infineon Technologies irf3205spbf.pdf?fileId=5546d462533600a4015355defac9190c Description: MOSFET N-CH 55V 110A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
Produkt ist nicht verfügbar
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IRLBA1304PPBF IRLBA1304PPBF Infineon Technologies irlba1304.pdf Description: MOSFET N-CH 40V 185A SUPER-220
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SUPER-220™ (TO-273AA)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-273AA
Packaging: Tube
Produkt ist nicht verfügbar
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IRLI3803PBF IRLI3803PBF Infineon Technologies IRLI3803PbF.pdf Description: MOSFET N-CH 30V 76A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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IR21094SPBF IR21094SPBF Infineon Technologies ir2109.pdf?fileId=5546d462533600a4015355c7e85b1679 Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1980 Stücke
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IR21844SPBF IR21844SPBF Infineon Technologies ir2184.pdf?fileId=5546d462533600a4015355c955e616d4 description Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 2009 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.67 EUR
10+5.81 EUR
55+5.03 EUR
110+4.81 EUR
275+4.57 EUR
550+4.43 EUR
1045+4.32 EUR
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IRLR3715PBF IRLR3715PBF Infineon Technologies irlr3715pbf.pdf Description: MOSFET N-CH 20V 54A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
Produkt ist nicht verfügbar
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IRLR3714ZPBF IRLR3714ZPBF Infineon Technologies IRL%28R%2CU%293714ZPbF.pdf description Description: MOSFET N-CH 20V 37A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
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IRLU3715PBF IRLU3715PBF Infineon Technologies irlr3715pbf.pdf Description: MOSFET N-CH 20V 54A I-PAK
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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IRLU014NPBF IRLU014NPBF Infineon Technologies IRL%28R%2CU%29014NPbF.pdf Description: MOSFET N-CH 55V 10A I-PAK
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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IRLU2703PBF IRLU2703PBF Infineon Technologies irlr2703pbf.pdf?fileId=5546d462533600a40153566974c9266a Description: MOSFET N-CH 30V 23A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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IRLR014NPBF IRLR014NPBF Infineon Technologies IRL%28R%2CU%29014NPbF.pdf Description: MOSFET N-CH 55V 10A DPAK
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Produkt ist nicht verfügbar
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IRFU3303PBF IRFU3303PBF Infineon Technologies irfr3303pbf.pdf?fileId=5546d462533600a401535630f56c208d Description: MOSFET N-CH 30V 33A IPAK
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IRFU220NPBF IRFU220NPBF Infineon Technologies irfr220npbf.pdf?fileId=5546d462533600a40153562d8a7b206f Description: MOSFET N-CH 200V 5A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: IPAK (TO-251AA)
auf Bestellung 23 Stücke:
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10+1.9 EUR
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IRLU024ZPBF IRLU024ZPBF Infineon Technologies IRLR024ZPbF%2C%20IRLU024ZPbF.pdf description Description: MOSFET N-CH 55V 16A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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IRFU120NPBF IRFU120NPBF Infineon Technologies irfr120npbf.pdf?fileId=5546d462533600a40153562d2620204d Description: MOSFET N-CH 100V 9.4A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
auf Bestellung 1459 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.46 EUR
75+0.59 EUR
150+0.56 EUR
1050+0.51 EUR
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IRLU120NPBF IRLU120NPBF Infineon Technologies irlr120npbf.pdf?fileId=5546d462533600a40153566965182665 description Description: MOSFET N-CH 100V 10A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
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IRLU024NPBF IRLU024NPBF Infineon Technologies infineon-irlr024n-datasheet-en.pdf description Description: MOSFET N-CH 55V 17A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
auf Bestellung 34515 Stücke:
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6+3.22 EUR
75+1.44 EUR
150+1.29 EUR
525+1.08 EUR
1050+0.98 EUR
2025+0.91 EUR
5025+0.83 EUR
10050+0.77 EUR
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IRFU4105ZPBF IRFU4105ZPBF Infineon Technologies irfr4105zpbf.pdf?fileId=5546d462533600a4015356321faf20ee description Description: MOSFET N-CH 55V 30A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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IRLR024ZPBF IRLR024ZPBF Infineon Technologies IRLR024ZPbF%2C%20IRLU024ZPbF.pdf description Description: MOSFET N-CH 55V 16A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
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IRFU024NPBF IRFU024NPBF Infineon Technologies irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c Description: MOSFET N-CH 55V 17A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Produkt ist nicht verfügbar
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IRFU9024NPBF IRFU9024NPBF Infineon Technologies irfr9024npbf.pdf?fileId=5546d462533600a401535635f91d2132 description Description: MOSFET P-CH 55V 11A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 6325 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.98 EUR
75+1.8 EUR
150+1.62 EUR
525+1.36 EUR
1050+1.25 EUR
2025+1.16 EUR
5025+1.06 EUR
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IRFU9120NPBF IRFU9120NPBF Infineon Technologies irfr9120npbf.pdf?fileId=5546d462533600a40153563607932138 Description: MOSFET P-CH 100V 6.6A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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IRF1010NSPBF description Infineon-IRF1010NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee33da90638
IRF1010NSPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 85A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
Produkt ist nicht verfügbar
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IRFI1310NPBF irfi1310npbf.pdf?fileId=5546d462533600a401535623bd4b1f69
IRFI1310NPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 24A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 3603 Stücke:
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AnzahlPreis
4+4.73 EUR
50+2.32 EUR
100+2.09 EUR
500+1.68 EUR
1000+1.54 EUR
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IRL1004PBF irl1004pbf.pdf?fileId=5546d462533600a40153565b184224e4
IRL1004PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 130A TO220AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
auf Bestellung 1000 Stücke:
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AnzahlPreis
3+6.56 EUR
50+3.35 EUR
100+3.04 EUR
500+2.5 EUR
1000+2.32 EUR
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IRG4BC20SDPBF description irg4bc20sdpbf.pdf?fileId=5546d462533600a40153563f5de2225f
IRG4BC20SDPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 19A TO-220AB
Power - Max: 60 W
Current - Collector Pulsed (Icm): 38 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 19 A
Part Status: Obsolete
Gate Charge: 27 nC
Test Condition: 480V, 10A, 50Ohm, 15V
Switching Energy: 320µJ (on), 2.58mJ (off)
Td (on/off) @ 25°C: 62ns/690ns
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
Reverse Recovery Time (trr): 37 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRFS41N15DPBF irfb41n15dpbf.pdf?fileId=5546d462533600a401535615d3b61e16
IRFS41N15DPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 41A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 25 V
Produkt ist nicht verfügbar
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IR2183PBF infineon-ir2183-datasheet-en.pdf
IR2183PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRL3103D1PBF irl3103d1pbf.pdf
IRL3103D1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 64A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V
Power Dissipation (Max): 2W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar
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IR2184PBF ir2184.pdf?fileId=5546d462533600a4015355c955e616d4
IR2184PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 1456 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+7.11 EUR
10+5.37 EUR
50+4.67 EUR
100+4.46 EUR
250+4.23 EUR
500+4.09 EUR
1000+3.98 EUR
Mindestbestellmenge: 3 Stücke
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IRL3705NPBF description irl3705npbf.pdf?fileId=5546d462533600a40153565f31232534
IRL3705NPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 89A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 2905 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.93 EUR
10+3.18 EUR
100+2.18 EUR
500+1.75 EUR
1000+1.62 EUR
2000+1.5 EUR
Mindestbestellmenge: 4 Stücke
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IRL1004SPBF irl1004spbf.pdf?fileId=5546d462533600a40153565b1f5b24e6
IRL1004SPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 130A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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IRG4BC30S-SPBF IRG4BC30S-SPbF.pdf
IRG4BC30S-SPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 34A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRG4BC30U-SPBF IRG4BC30U-SPbF.pdf
IRG4BC30U-SPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 23A 100W D2PAK
Power - Max: 100 W
Current - Collector Pulsed (Icm): 92 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 23 A
Part Status: Obsolete
Gate Charge: 50 nC
Test Condition: 480V, 12A, 23Ohm, 15V
Switching Energy: 160µJ (on), 200µJ (off)
Td (on/off) @ 25°C: 17ns/78ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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IRG4BC30K-SPBF description IRG4BC30K-S.pdf
IRG4BC30K-SPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 28A 100W D2PAK
Power - Max: 100 W
Current - Collector Pulsed (Icm): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 28 A
Gate Charge: 67 nC
Test Condition: 480V, 16A, 23Ohm, 15V
Switching Energy: 360µJ (on), 510µJ (off)
Td (on/off) @ 25°C: 26ns/130ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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IRF1607PBF IRF1607PbF.pdf
IRF1607PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 142A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 85A, 10V
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Produkt ist nicht verfügbar
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IRF2807SPBF description irf2807spbf.pdf?fileId=5546d462533600a4015355deafc518f4
IRF2807SPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 82A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
Produkt ist nicht verfügbar
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IRLI2203NPBF IRLI2203NPbF.pdf
IRLI2203NPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 61A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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IRG4BC20KDPBF IRG4BC20KDPbF.pdf
IRG4BC20KDPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 16A TO-220AB
Part Status: Obsolete
Gate Charge: 34 nC
Test Condition: 480V, 9A, 50Ohm, 15V
Switching Energy: 340µJ (on), 300µJ (off)
Td (on/off) @ 25°C: 54ns/180ns
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
Reverse Recovery Time (trr): 37 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 60 W
Current - Collector Pulsed (Icm): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Produkt ist nicht verfügbar
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IRG4IBC20KDPBF irg4ibc20kdpbf.pdf?fileId=5546d462533600a401535643777122ad
IRG4IBC20KDPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 11.5A TO220AB FP
Power - Max: 34 W
Current - Collector Pulsed (Icm): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 11.5 A
Part Status: Obsolete
Gate Charge: 34 nC
Test Condition: 480V, 9A, 50Ohm, 15V
Switching Energy: 340µJ (on), 300µJ (off)
Td (on/off) @ 25°C: 54ns/180ns
Supplier Device Package: TO-220AB Full-Pak
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
Reverse Recovery Time (trr): 37 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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IRG4BC20UD-SPBF irg4bc20ud-spbf.pdf?fileId=5546d462533600a40153563f7f112267
IRG4BC20UD-SPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 13A 60W D2PAK
Td (on/off) @ 25°C: 39ns/93ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Reverse Recovery Time (trr): 37 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 60 W
Current - Collector Pulsed (Icm): 52 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 13 A
Part Status: Obsolete
Gate Charge: 27 nC
Test Condition: 480V, 6.5A, 50Ohm, 15V
Switching Energy: 160µJ (on), 130µJ (off)
Produkt ist nicht verfügbar
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IRLI2910PBF irli2910pbf.pdf?fileId=5546d462533600a401535663d07b25b5
IRLI2910PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 31A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 16A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Produkt ist nicht verfügbar
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IRG4BC20MD-SPBF IRG4BC20MD-SPbF.pdf
IRG4BC20MD-SPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 18A 60W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 11A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 21ns/463ns
Switching Energy: 410µJ (on), 2.03mJ (off)
Test Condition: 480V, 11A, 50Ohm, 15V
Gate Charge: 39 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 60 W
Produkt ist nicht verfügbar
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IRL3705NSPBF description Infineon-IRL3705NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fed0f9650631
IRL3705NSPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 89A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Produkt ist nicht verfügbar
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IRF1405SPBF IRF1405%28S%2CL%29PbF.pdf
IRF1405SPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 131A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
Produkt ist nicht verfügbar
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IRF1404LPBF irf1404spbf.pdf?fileId=5546d462533600a4015355daf0f118b2
IRF1404LPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 162A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IRF1405LPBF IRF1405%28S%2CL%29PbF.pdf
IRF1405LPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 131A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
Produkt ist nicht verfügbar
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IRF1404SPBF irf1404spbf.pdf?fileId=5546d462533600a4015355daf0f118b2
IRF1404SPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 162A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Produkt ist nicht verfügbar
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IR2128PBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
IR2128PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Part Status: Active
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 0.8V, 3V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side or Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 80ns, 40ns
Supplier Device Package: 8-PDIP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 12V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 18000 Stücke
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IRF3415SPBF irf3415spbf.pdf?fileId=5546d462533600a4015355df28f8191b
IRF3415SPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 43A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
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IRG4IBC30SPBF irg4ibc30spbf.pdf?fileId=5546d462533600a4015356439d2422b8
IRG4IBC30SPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 23.5A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 23.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 47 A
Power - Max: 45 W
Produkt ist nicht verfügbar
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IRF2804PBF irf2804pbf.pdf?fileId=5546d462533600a4015355de76f818e3
IRF2804PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
auf Bestellung 3650 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.12 EUR
50+2.56 EUR
100+2.31 EUR
500+1.87 EUR
1000+1.73 EUR
2000+1.62 EUR
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IRFB4310PBF irfs4310pbf.pdf?fileId=5546d462533600a40153563a0e2e21a7
IRFB4310PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 50 V
auf Bestellung 29844 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.64 EUR
50+3.34 EUR
100+3.02 EUR
500+2.46 EUR
1000+2.28 EUR
2000+2.13 EUR
5000+1.97 EUR
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IRFB260NPBF infineon-irfb260n-datasheet-en.pdf
IRFB260NPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 56A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IR2121PBF ir2121.pdf?fileId=5546d462533600a4015355c84fa31691
IR2121PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 43ns, 26ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 1.6A, 3.3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 16760 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.44 EUR
10+4.86 EUR
50+4.22 EUR
100+4.02 EUR
250+3.81 EUR
500+3.69 EUR
1000+3.58 EUR
2500+3.47 EUR
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IRG4IBC30FDPBF IRG4IBC30FDPbF.pdf
IRG4IBC30FDPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 20.3A 45W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 42ns/230ns
Switching Energy: 630µJ (on), 1.39mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20.3 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 45 W
Produkt ist nicht verfügbar
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IRG4BC30UDPBF IRG4BC30UDPbF.pdf
IRG4BC30UDPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 23A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 40ns/91ns
Switching Energy: 380µJ (on), 160µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRL2910SPBF irl2910spbf.pdf?fileId=5546d462533600a40153565b9922250d
IRL2910SPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 55A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Produkt ist nicht verfügbar
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IRF3710SPBF irf3710spbf.pdf?fileId=5546d462533600a4015355df9dff1949
IRF3710SPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 57A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
Produkt ist nicht verfügbar
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IRF3205LPBF irf3205spbf.pdf?fileId=5546d462533600a4015355defac9190c
IRF3205LPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 110A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
Produkt ist nicht verfügbar
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IRF3205SPBF irf3205spbf.pdf?fileId=5546d462533600a4015355defac9190c
IRF3205SPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 110A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
Produkt ist nicht verfügbar
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IRLBA1304PPBF irlba1304.pdf
IRLBA1304PPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 185A SUPER-220
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SUPER-220™ (TO-273AA)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-273AA
Packaging: Tube
Produkt ist nicht verfügbar
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IRLI3803PBF IRLI3803PbF.pdf
IRLI3803PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 76A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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IR21094SPBF ir2109.pdf?fileId=5546d462533600a4015355c7e85b1679
IR21094SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1980 Stücke
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IR21844SPBF description ir2184.pdf?fileId=5546d462533600a4015355c955e616d4
IR21844SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 2009 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+7.67 EUR
10+5.81 EUR
55+5.03 EUR
110+4.81 EUR
275+4.57 EUR
550+4.43 EUR
1045+4.32 EUR
Mindestbestellmenge: 3 Stücke
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IRLR3715PBF irlr3715pbf.pdf
IRLR3715PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 54A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
Produkt ist nicht verfügbar
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IRLR3714ZPBF description IRL%28R%2CU%293714ZPbF.pdf
IRLR3714ZPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 37A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
Produkt ist nicht verfügbar
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IRLU3715PBF irlr3715pbf.pdf
IRLU3715PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 54A I-PAK
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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IRLU014NPBF IRL%28R%2CU%29014NPbF.pdf
IRLU014NPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 10A I-PAK
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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IRLU2703PBF irlr2703pbf.pdf?fileId=5546d462533600a40153566974c9266a
IRLU2703PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 23A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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IRLR014NPBF IRL%28R%2CU%29014NPbF.pdf
IRLR014NPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 10A DPAK
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Produkt ist nicht verfügbar
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IRFU3303PBF irfr3303pbf.pdf?fileId=5546d462533600a401535630f56c208d
IRFU3303PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 33A IPAK
Produkt ist nicht verfügbar
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IRFU220NPBF irfr220npbf.pdf?fileId=5546d462533600a40153562d8a7b206f
IRFU220NPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 5A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: IPAK (TO-251AA)
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.9 EUR
Mindestbestellmenge: 10 Stücke
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IRLU024ZPBF description IRLR024ZPbF%2C%20IRLU024ZPbF.pdf
IRLU024ZPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 16A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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IRFU120NPBF irfr120npbf.pdf?fileId=5546d462533600a40153562d2620204d
IRFU120NPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9.4A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
auf Bestellung 1459 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
13+1.46 EUR
75+0.59 EUR
150+0.56 EUR
1050+0.51 EUR
Mindestbestellmenge: 13 Stücke
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IRLU120NPBF description irlr120npbf.pdf?fileId=5546d462533600a40153566965182665
IRLU120NPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 10A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IRLU024NPBF description infineon-irlr024n-datasheet-en.pdf
IRLU024NPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
auf Bestellung 34515 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.22 EUR
75+1.44 EUR
150+1.29 EUR
525+1.08 EUR
1050+0.98 EUR
2025+0.91 EUR
5025+0.83 EUR
10050+0.77 EUR
Mindestbestellmenge: 6 Stücke
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IRFU4105ZPBF description irfr4105zpbf.pdf?fileId=5546d462533600a4015356321faf20ee
IRFU4105ZPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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IRLR024ZPBF description IRLR024ZPbF%2C%20IRLU024ZPbF.pdf
IRLR024ZPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 16A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Produkt ist nicht verfügbar
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IRFU024NPBF irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c
IRFU024NPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Produkt ist nicht verfügbar
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IRFU9024NPBF description irfr9024npbf.pdf?fileId=5546d462533600a401535635f91d2132
IRFU9024NPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 11A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 6325 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.98 EUR
75+1.8 EUR
150+1.62 EUR
525+1.36 EUR
1050+1.25 EUR
2025+1.16 EUR
5025+1.06 EUR
Mindestbestellmenge: 5 Stücke
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IRFU9120NPBF irfr9120npbf.pdf?fileId=5546d462533600a40153563607932138
IRFU9120NPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 6.6A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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