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IPG-22211Bud IndustriesDescription: CABLE GLAND 5-10MM PG11 NYLON
Packaging: Bulk
Color: Black
Material: Polyamide (PA), Nylon
Thread Size: PG11
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 0.730" (18.5mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.390" (9.91mm)
Outside Cable Diameter (Min): 0.200" (5.08mm)
Thread Length: 0.320" (8.13mm)
auf Bestellung 3257 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.13 EUR
16+ 1.64 EUR
Mindestbestellmenge: 13
IPG-22211BUD INDUSTRIESDescription: BUD INDUSTRIES - IPG-22211 - CABLE GLAND, NYLON, 9.9MM, BLACK
tariffCode: 85472000
Gewindemaß - Imperial: PG11
productTraceability: Yes-Date/Lot Code
Material der Kabelverschraubung: Nylon (Polyamide)
rohsCompliant: YES
Kabeldurchmesser, min.: 0
Gewindemaß - Metrisch: -
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
IP- / NEMA-Schutzart: IP66
Farbe d. Kabelverschraubung: Black
usEccn: EAR99
Kabeldurchmesser, max.: 0
Produktpalette: Multicomp Pro RJ45 Adapter
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)
IPG-22211Bud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thin Wall (PG-11) .2 to .39"
auf Bestellung 50 Stücke:
Lieferzeit 14-28 Tag (e)
24+2.2 EUR
30+ 1.75 EUR
Mindestbestellmenge: 24
IPG-22211-BPGBud IndustriesCable Glands, Strain Reliefs & Cord Grips CBL GLAND/BEND PROOF WIRE DIA 0.2- 0.39"
auf Bestellung 5 Stücke:
Lieferzeit 14-28 Tag (e)
IPG-22211-BPGBud IndustriesDescription: CABLE GLAND 5-10MM PG11 NYLON
Packaging: Bulk
Color: Gray
Material: Polyamide (PA), Nylon
Thread Size: PG11
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 0.730" (18.5mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.390" (9.91mm)
Outside Cable Diameter (Min): 0.200" (5.08mm)
Thread Length: 0.320" (8.13mm)
auf Bestellung 968 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.97 EUR
10+ 5.22 EUR
100+ 4.95 EUR
Mindestbestellmenge: 4
IPG-22211-GBud IndustriesCable Glands, Strain Reliefs & Cord Grips NYLON CABLE GLAND WI RE DIA 0.2- 0.39"
auf Bestellung 20 Stücke:
Lieferzeit 14-28 Tag (e)
IPG-22211-GBud IndustriesDescription: CABLE GLAND 5-10MM PG11 NYLON
Packaging: Bulk
Color: Gray
Material: Polyamide (PA), Nylon
Thread Size: PG11
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 0.730" (18.5mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.390" (9.91mm)
Outside Cable Diameter (Min): 0.200" (5.08mm)
Thread Length: 0.320" (8.13mm)
auf Bestellung 995 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.13 EUR
16+ 1.64 EUR
Mindestbestellmenge: 13
IPG-222114-GBud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thick Wall (PG-11) .2 to .39"
auf Bestellung 2 Stücke:
Lieferzeit 14-28 Tag (e)
18+2.91 EUR
24+ 2.2 EUR
Mindestbestellmenge: 18
IPG-222114-GBud IndustriesDescription: CABLE GLAND 5-10MM PG11 NYLON
Packaging: Bulk
Color: Gray
Material: Polyamide (PA), Nylon
Thread Size: PG11
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 0.710" (18.0mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.390" (9.91mm)
Outside Cable Diameter (Min): 0.200" (5.08mm)
Thread Length: 0.590" (14.99mm)
auf Bestellung 3650 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.89 EUR
13+ 2.16 EUR
100+ 2.1 EUR
Mindestbestellmenge: 10
IPG-222135Bud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thin Wall (PG-13.5) .24 to .47"
auf Bestellung 46 Stücke:
Lieferzeit 14-28 Tag (e)
20+2.65 EUR
26+ 2.05 EUR
Mindestbestellmenge: 20
IPG-222135BUD INDUSTRIESDescription: BUD INDUSTRIES - IPG-222135 - CABLE GLAND, NYLON, 11.9MM, BLACK
tariffCode: 85472000
Gewindemaß - Imperial: PG13.5
productTraceability: Yes-Date/Lot Code
Material der Kabelverschraubung: Nylon (Polyamide)
rohsCompliant: YES
Kabeldurchmesser, min.: 6.1mm
Gewindemaß - Metrisch: -
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
IP- / NEMA-Schutzart: IP66
Farbe d. Kabelverschraubung: Black
usEccn: EAR99
Kabeldurchmesser, max.: 11.9mm
Produktpalette: -
SVHC: No SVHC (14-Jun-2023)
Produkt ist nicht verfügbar
IPG-222135Bud IndustriesDescription: CABLE GLAND 6.1-11.94MM PG13.5
Packaging: Bulk
Color: Black
Material: Polyamide (PA), Nylon
Thread Size: PG13.5
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 0.800" (20.3mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.470" (11.94mm)
Outside Cable Diameter (Min): 0.240" (6.10mm)
Thread Length: 0.350" (8.89mm)
auf Bestellung 18707 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.65 EUR
14+ 1.98 EUR
100+ 1.95 EUR
Mindestbestellmenge: 10
IPG-222135-BPGBud IndustriesDescription: CABLE GLAND 6-12MM PG13.5 NYLON
Packaging: Bulk
Color: Gray
Material: Polyamide (PA), Nylon
Thread Size: PG13.5
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 0.800" (20.3mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.470" (11.94mm)
Outside Cable Diameter (Min): 0.240" (6.10mm)
Thread Length: 0.350" (8.89mm)
auf Bestellung 289 Stücke:
Lieferzeit 21-28 Tag (e)
3+8.84 EUR
10+ 6.63 EUR
100+ 6.34 EUR
Mindestbestellmenge: 3
IPG-222135-BPGBud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Bend Proof (PG-13.5) .24 to .47"
auf Bestellung 5 Stücke:
Lieferzeit 14-28 Tag (e)
7+8.22 EUR
10+ 6.16 EUR
100+ 6.11 EUR
Mindestbestellmenge: 7
IPG-222135-GBud IndustriesCable Glands, Strain Reliefs & Cord Grips NYLON CABLE GLAND WI RE DIA 0.24- 0.47"
auf Bestellung 61 Stücke:
Lieferzeit 14-28 Tag (e)
IPG-222135-GBud IndustriesDescription: CABLE GLAND 6.1-11.94MM PG13.5
Packaging: Bulk
Color: Gray
Material: Polyamide (PA), Nylon
Thread Size: PG13.5
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 0.800" (20.3mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.470" (11.94mm)
Outside Cable Diameter (Min): 0.240" (6.10mm)
Thread Length: 0.350" (8.89mm)
auf Bestellung 6686 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.65 EUR
14+ 1.98 EUR
100+ 1.95 EUR
Mindestbestellmenge: 10
IPG-2221354-GBUD IndustriesCable Accessories Gland Nylon Light Gray
Produkt ist nicht verfügbar
IPG-2221354-GBud IndustriesCable Glands, Strain Reliefs & Cord Grips CABLE GLAND/LNG THRD WIRE DIA 0.24- 0.47
auf Bestellung 70 Stücke:
Lieferzeit 14-28 Tag (e)
IPG-2221354-GBud IndustriesDescription: CABLE GLAND 6.1-11.94MM PG13.5
Packaging: Bulk
Color: Gray
Material: Polyamide (PA), Nylon
Thread Size: PG13.5
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 0.790" (20.1mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.470" (11.94mm)
Outside Cable Diameter (Min): 0.240" (6.10mm)
Thread Length: 0.590" (14.99mm)
auf Bestellung 462 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.61 EUR
10+ 2.7 EUR
100+ 2.55 EUR
Mindestbestellmenge: 8
IPG-22216BUD INDUSTRIESDescription: BUD INDUSTRIES - IPG-22216 - CABLE GLAND, NYLON, 14MM, BLACK
tariffCode: 85472000
Gewindemaß - Imperial: PG16
productTraceability: Yes-Date/Lot Code
Material der Kabelverschraubung: Nylon (Polyamide)
rohsCompliant: YES
Kabeldurchmesser, min.: 0
Gewindemaß - Metrisch: -
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
IP- / NEMA-Schutzart: IP66
Farbe d. Kabelverschraubung: Black
usEccn: EAR99
Kabeldurchmesser, max.: 0
Produktpalette: Multicomp Pro RJ45 Adapter
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
IPG-22216Bud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thin Wall (PG-16) .39 to .55"
auf Bestellung 10 Stücke:
Lieferzeit 14-28 Tag (e)
17+3.15 EUR
23+ 2.36 EUR
Mindestbestellmenge: 17
IPG-22216Bud IndustriesDescription: CABLE GLAND 9.91-13.97MM PG16
Packaging: Bulk
Color: Black
Material: Polyamide (PA), Nylon
Thread Size: PG16
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 0.890" (22.6mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.550" (13.97mm)
Outside Cable Diameter (Min): 0.390" (9.91mm)
Thread Length: 0.390" (9.91mm)
auf Bestellung 6672 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.12 EUR
12+ 2.34 EUR
100+ 2.25 EUR
Mindestbestellmenge: 9
IPG-22216-BPGBud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Bend Proof (PG-16) .39 to .55"
auf Bestellung 3 Stücke:
Lieferzeit 14-28 Tag (e)
5+10.4 EUR
10+ 7.77 EUR
100+ 7.54 EUR
Mindestbestellmenge: 5
IPG-22216-BPGBud IndustriesDescription: CABLE GLAND 10-14MM PG16 NYLON
Packaging: Bulk
Color: Gray
Material: Polyamide (PA), Nylon
Thread Size: PG16
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 0.890" (22.6mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.550" (13.97mm)
Outside Cable Diameter (Min): 0.390" (9.91mm)
Thread Length: 0.390" (9.91mm)
auf Bestellung 449 Stücke:
Lieferzeit 21-28 Tag (e)
3+11.18 EUR
10+ 8.38 EUR
100+ 7.83 EUR
250+ 7.8 EUR
Mindestbestellmenge: 3
IPG-22216-GBud IndustriesDescription: CABLE GLAND 10-14MM PG16 NYLON
Packaging: Bulk
Color: Gray
Material: Polyamide (PA), Nylon
Thread Size: PG16
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 0.890" (22.6mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.550" (13.97mm)
Outside Cable Diameter (Min): 0.390" (9.91mm)
Thread Length: 0.390" (9.91mm)
auf Bestellung 505 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.09 EUR
12+ 2.31 EUR
100+ 2.22 EUR
Mindestbestellmenge: 9
IPG-22216-GBUD INDUSTRIESDescription: BUD INDUSTRIES - IPG-22216-G - CABLE GLAND, NYLON, 14MM, GREY
Gewindemaß - Imperial: PG16
Material der Kabelverschraubung: Nylon (Polyamide)
Kabeldurchmesser, min.: 9.9
Gewindemaß - Metrisch: -
IP- / NEMA-Schutzart: IP66
Farbe d. Kabelverschraubung: Grey
Kabeldurchmesser, max.: 14
Produktpalette: -
SVHC: No SVHC (17-Jan-2022)
Produkt ist nicht verfügbar
IPG-22216-GBud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thin Wall - Gray (PG-16) .39 to .55"
auf Bestellung 34 Stücke:
Lieferzeit 14-28 Tag (e)
17+3.15 EUR
23+ 2.36 EUR
Mindestbestellmenge: 17
IPG-222164-GBud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thick Wall - Gray (PG-16) .39 to .55"
auf Bestellung 21 Stücke:
Lieferzeit 14-28 Tag (e)
12+4.34 EUR
16+ 3.28 EUR
100+ 3.15 EUR
Mindestbestellmenge: 12
IPG-222164-GBud IndustriesDescription: CABLE GLAND 10-14MM PG16 NYLON
Packaging: Bulk
Color: Gray
Material: Polyamide (PA), Nylon
Thread Size: PG16
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 0.870" (22.1mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.550" (13.97mm)
Outside Cable Diameter (Min): 0.390" (9.91mm)
Thread Length: 0.590" (14.99mm)
auf Bestellung 877 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.26 EUR
10+ 3.2 EUR
100+ 2.99 EUR
250+ 2.96 EUR
Mindestbestellmenge: 7
IPG-22219Bud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland, Thin Wall (PG-19) 0.47 to 0.59
auf Bestellung 3 Stücke:
Lieferzeit 14-28 Tag (e)
15+3.64 EUR
20+ 2.7 EUR
100+ 2.68 EUR
Mindestbestellmenge: 15
IPG-22219Bud IndustriesDescription: CABLE GLAND 11.94-14.99MM PG19
Packaging: Bulk
Color: Black
Material: Polyamide (PA), Nylon
Thread Size: PG19
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 0.930" (23.6mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.590" (14.99mm)
Outside Cable Diameter (Min): 0.470" (11.94mm)
Thread Length: 0.390" (9.91mm)
auf Bestellung 11671 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.61 EUR
10+ 2.7 EUR
100+ 2.55 EUR
Mindestbestellmenge: 8
IPG-22219-GBUD INDUSTRIESDescription: BUD INDUSTRIES - IPG-22219-G - CABLE GLAND, NYLON, 15MM, GREY
tariffCode: 85472000
Gewindemaß - Imperial: PG19
productTraceability: Yes-Date/Lot Code
Material der Kabelverschraubung: Nylon (Polyamide)
rohsCompliant: YES
Kabeldurchmesser, min.: 0
Gewindemaß - Metrisch: -
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
IP- / NEMA-Schutzart: IP66
Farbe d. Kabelverschraubung: Grey
usEccn: EAR99
Kabeldurchmesser, max.: 0
Produktpalette: Multicomp Pro RJ45 Adapter
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
IPG-22219-GBud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland, Thin Wall - Gray (PG-19) 0.47 to 0.59
auf Bestellung 70 Stücke:
Lieferzeit 14-28 Tag (e)
15+3.64 EUR
20+ 2.7 EUR
100+ 2.68 EUR
Mindestbestellmenge: 15
IPG-22219-GBud IndustriesDescription: CABLE GLAND 12-15MM PG19 NYLON
Packaging: Bulk
Color: Gray
Material: Polyamide (PA), Nylon
Thread Size: PG19
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 0.930" (23.6mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.590" (14.99mm)
Outside Cable Diameter (Min): 0.470" (11.94mm)
Thread Length: 0.390" (9.91mm)
auf Bestellung 204 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.61 EUR
10+ 2.7 EUR
100+ 2.55 EUR
Mindestbestellmenge: 8
IPG-22221Bud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thin Wall (PG-21) .51 to .7"
auf Bestellung 33 Stücke:
Lieferzeit 14-28 Tag (e)
11+4.84 EUR
15+ 3.64 EUR
100+ 3.61 EUR
Mindestbestellmenge: 11
IPG-22221Bud IndustriesDescription: CABLE GLAND 13-18MM PG21 NYLON
Packaging: Bulk
Color: Black
Material: Polyamide (PA), Nylon
Thread Size: PG21
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 1.110" (28.2mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.710" (18.03mm)
Outside Cable Diameter (Min): 0.510" (12.95mm)
Thread Length: 0.390" (9.91mm)
auf Bestellung 770 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.81 EUR
10+ 3.6 EUR
100+ 3.45 EUR
Mindestbestellmenge: 6
IPG-22221BUD INDUSTRIESDescription: BUD INDUSTRIES - IPG-22221 - CABLE GLAND, NYLON, 18MM, BLACK
tariffCode: 85472000
Gewindemaß - Imperial: PG21
productTraceability: No
Material der Kabelverschraubung: Nylon (Polyamide)
rohsCompliant: YES
Kabeldurchmesser, min.: 12.9mm
Gewindemaß - Metrisch: -
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
IP- / NEMA-Schutzart: IP66
Farbe d. Kabelverschraubung: Black
usEccn: EAR99
Kabeldurchmesser, max.: 18mm
Produktpalette: Multicomp Pro RJ45 Adapter
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
IPG-22221-BPGBud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Bend Proof (PG-21) .51 to .7"
Produkt ist nicht verfügbar
IPG-22221-BPGBud IndustriesDescription: CABLE GLAND 13-17.8MM PG21 NYLON
Packaging: Bulk
Color: Gray
Material: Polyamide (PA), Nylon
Thread Size: PG21
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 1.110" (28.2mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.700" (17.78mm)
Outside Cable Diameter (Min): 0.510" (12.95mm)
Thread Length: 0.390" (9.91mm)
auf Bestellung 737 Stücke:
Lieferzeit 21-28 Tag (e)
2+16.3 EUR
10+ 12.22 EUR
100+ 11.55 EUR
Mindestbestellmenge: 2
IPG-22221-GBud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thin Wall - Gray (PG-21) .51 to .7"
auf Bestellung 12 Stücke:
Lieferzeit 14-28 Tag (e)
11+4.84 EUR
15+ 3.64 EUR
100+ 3.61 EUR
Mindestbestellmenge: 11
IPG-22221-GBud IndustriesDescription: CABLE GLAND 13-18MM PG21 NYLON
Packaging: Bulk
Color: Gray
Material: Polyamide (PA), Nylon
Thread Size: PG21
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 1.110" (28.2mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.710" (18.03mm)
Outside Cable Diameter (Min): 0.510" (12.95mm)
Thread Length: 0.390" (9.91mm)
auf Bestellung 470 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.2 EUR
10+ 3.9 EUR
100+ 3.64 EUR
250+ 3.59 EUR
Mindestbestellmenge: 5
IPG-22225Bud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland, Thin Wall (PG-25) 0.59 to 0.75
auf Bestellung 1 Stücke:
Lieferzeit 14-28 Tag (e)
10+5.56 EUR
14+ 3.87 EUR
100+ 3.82 EUR
Mindestbestellmenge: 10
IPG-22225Bud IndustriesDescription: CABLE GLAND 14.99-19.05MM PG25
Packaging: Bulk
Color: Black
Material: Polyamide (PA), Nylon
Thread Size: PG25
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 1.160" (29.5mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Outside Cable Diameter (Max): 0.750" (19.05mm)
Outside Cable Diameter (Min): 0.590" (14.99mm)
Thread Length: 0.430" (10.92mm)
Produkt ist nicht verfügbar
IPG-22225BUD INDUSTRIESDescription: BUD INDUSTRIES - IPG-22225 - CABLE GLAND, NYLON, 19MM, BLACK
tariffCode: 85472000
Gewindemaß - Imperial: PG25
productTraceability: No
Material der Kabelverschraubung: Nylon (Polyamide)
rohsCompliant: YES
Kabeldurchmesser, min.: 0
Gewindemaß - Metrisch: -
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
IP- / NEMA-Schutzart: IP66
Farbe d. Kabelverschraubung: Black
usEccn: EAR99
Kabeldurchmesser, max.: 0
Produktpalette: -
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
IPG-22225-GBud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland, Thin Wall - Gray (PG-25) 0.59 to 0.75
auf Bestellung 12 Stücke:
Lieferzeit 14-28 Tag (e)
10+5.33 EUR
14+ 3.98 EUR
100+ 3.93 EUR
Mindestbestellmenge: 10
IPG-22225-GBud IndustriesDescription: CABLE GLAND 14.99-19.05MM PG25
Packaging: Bulk
Color: Gray
Material: Polyamide (PA), Nylon
Thread Size: PG25
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 1.160" (29.5mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.750" (19.05mm)
Outside Cable Diameter (Min): 0.590" (14.99mm)
Thread Length: 0.430" (10.92mm)
Produkt ist nicht verfügbar
IPG-22229Bud IndustriesCable Glands, Strain Reliefs & Cord Grips NYLON CABLE GLAND WI RE DIA 0.71- 0.98"
auf Bestellung 4 Stücke:
Lieferzeit 14-28 Tag (e)
IPG-22229Bud IndustriesDescription: CABLE GLAND 18-25MM PG29 NYLON
Packaging: Bulk
Color: Black
Material: Polyamide (PA), Nylon
Thread Size: PG29
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 1.460" (37.1mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Outside Cable Diameter (Max): 0.980" (24.89mm)
Outside Cable Diameter (Min): 0.710" (18.03mm)
Thread Length: 0.470" (11.94mm)
auf Bestellung 96 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.85 EUR
10+ 5.89 EUR
Mindestbestellmenge: 4
IPG-22229-GBud IndustriesCable Glands, Strain Reliefs & Cord Grips NYLON CABLE GLAND WI RE DIA 0.71- 0.98"
auf Bestellung 1 Stücke:
Lieferzeit 14-28 Tag (e)
IPG-22229-GBud IndustriesDescription: CABLE GLAND 18-25MM PG29 NYLON
auf Bestellung 1469 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.16 EUR
10+ 6.12 EUR
100+ 5.75 EUR
Mindestbestellmenge: 4
IPG-22236Bud IndustriesCable Glands, Strain Reliefs & Cord Grips NYLON CABLE GLAND WI RE DIA 0.87-1.26"
auf Bestellung 8 Stücke:
Lieferzeit 14-28 Tag (e)
IPG-22236Bud IndustriesDescription: CABLE GLAND 22-32MM PG36 NYLON
Packaging: Bulk
Color: Black
Material: Polyamide (PA), Nylon
Thread Size: PG36
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 1.850" (47.0mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Outside Cable Diameter (Max): 1.260" (32.00mm)
Outside Cable Diameter (Min): 0.870" (22.10mm)
Thread Length: 0.530" (13.46mm)
auf Bestellung 495 Stücke:
Lieferzeit 21-28 Tag (e)
2+13.44 EUR
10+ 10.08 EUR
100+ 9.45 EUR
Mindestbestellmenge: 2
IPG-22236-GBud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland, Thin Wall - Gray (PG-36) 0.87 to 1.26
auf Bestellung 8 Stücke:
Lieferzeit 14-28 Tag (e)
4+13.55 EUR
10+ 10.17 EUR
100+ 9.91 EUR
Mindestbestellmenge: 4
IPG-22236-GBud IndustriesDescription: CABLE GLAND 22-32MM PG36 NYLON
auf Bestellung 755 Stücke:
Lieferzeit 21-28 Tag (e)
IPG-22242Bud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland, Thin Wall (PG-42) 1.18 to 1.50
auf Bestellung 4 Stücke:
Lieferzeit 14-28 Tag (e)
3+21.74 EUR
5+ 16.3 EUR
100+ 15.21 EUR
250+ 14.12 EUR
Mindestbestellmenge: 3
IPG-22242Bud IndustriesDescription: CABLE GLAND 30-38MM PG42 NYLON
auf Bestellung 199 Stücke:
Lieferzeit 21-28 Tag (e)
2+19.94 EUR
10+ 14.95 EUR
100+ 14.06 EUR
Mindestbestellmenge: 2
IPG-22242-GBud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland, Thin Wall - Gray (PG-42) 1.18 to 1.50
Produkt ist nicht verfügbar
IPG-22242-GBud IndustriesDescription: CABLE GLAND 30-38MM PG42 NYLON
auf Bestellung 131 Stücke:
Lieferzeit 21-28 Tag (e)
2+19.94 EUR
10+ 14.95 EUR
100+ 14.06 EUR
Mindestbestellmenge: 2
IPG-22248Bud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland, Thin Wall (PG-48) 1.34 to 1.73
auf Bestellung 1 Stücke:
Lieferzeit 14-28 Tag (e)
3+21.27 EUR
10+ 15.96 EUR
100+ 15.73 EUR
Mindestbestellmenge: 3
IPG-22248Bud IndustriesDescription: CABLE GLAND 34-44MM PG48 NYLON
Packaging: Bulk
Color: Black
Material: Polyamide (PA), Nylon
Thread Size: PG48
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 2.320" (58.9mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 1.730" (43.94mm)
Outside Cable Diameter (Min): 1.340" (34.04mm)
Thread Length: 0.550" (13.97mm)
auf Bestellung 499 Stücke:
Lieferzeit 21-28 Tag (e)
2+21.14 EUR
10+ 15.84 EUR
100+ 15.01 EUR
Mindestbestellmenge: 2
IPG-22248-GBud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland, Thin Wall - Gray (PG-48) 1.34 to 1.73
auf Bestellung 5 Stücke:
Lieferzeit 14-28 Tag (e)
3+21.27 EUR
10+ 15.96 EUR
100+ 15.73 EUR
Mindestbestellmenge: 3
IPG-22248-GBud IndustriesDescription: CABLE GLAND 34-44MM PG48 NYLON
Packaging: Bulk
Color: Gray
Material: Polyamide (PA), Nylon
Thread Size: PG48
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 2.320" (58.9mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 1.730" (43.94mm)
Outside Cable Diameter (Min): 1.340" (34.04mm)
Thread Length: 0.550" (13.97mm)
auf Bestellung 1958 Stücke:
Lieferzeit 21-28 Tag (e)
2+21.14 EUR
10+ 15.84 EUR
100+ 15.01 EUR
Mindestbestellmenge: 2
IPG-22263Bud IndustriesCable Mounting & Accessories NYLON CABLE GLAND WIRE DIA 1.65-1.97"
Produkt ist nicht verfügbar
IPG-22263-GBud IndustriesCable Glands, Strain Reliefs & Cord Grips NYLON CABLE GLAND WI RE DIA 1.65-1.97"
auf Bestellung 8 Stücke:
Lieferzeit 14-28 Tag (e)
IPG-2227BUD INDUSTRIESDescription: BUD INDUSTRIES - IPG-2227 - CABLE GLAND, NYLON, 6MM, BLACK
tariffCode: 85472000
Gewindemaß - Imperial: PG7
productTraceability: Yes-Date/Lot Code
Material der Kabelverschraubung: Nylon (Polyamide)
rohsCompliant: YES
Kabeldurchmesser, min.: 3mm
Gewindemaß - Metrisch: -
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
IP- / NEMA-Schutzart: IP66
Farbe d. Kabelverschraubung: Black
usEccn: EAR99
Kabeldurchmesser, max.: 6mm
Produktpalette: -
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
IPG-2227Bud IndustriesDescription: CABLE GLAND 3.05-6.1MM PG7
Packaging: Bulk
Color: Black
Material: Polyamide (PA), Nylon
Thread Size: PG7
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 0.490" (12.4mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.240" (6.10mm)
Outside Cable Diameter (Min): 0.120" (3.05mm)
Thread Length: 0.320" (8.13mm)
auf Bestellung 15036 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.2 EUR
29+ 0.9 EUR
100+ 0.84 EUR
250+ 0.75 EUR
Mindestbestellmenge: 22
IPG-2227Bud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thin Wall (PG-7) .12 to .24"
auf Bestellung 904 Stücke:
Lieferzeit 14-28 Tag (e)
44+1.21 EUR
58+ 0.91 EUR
100+ 0.79 EUR
Mindestbestellmenge: 44
IPG-2227-BPGBud IndustriesDescription: CABLE GLAND 3-6MM PG7 NYLON
Packaging: Bulk
Color: Gray
Material: Polyamide (PA), Nylon
Thread Size: PG7
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 0.490" (12.4mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.240" (6.10mm)
Outside Cable Diameter (Min): 0.120" (3.05mm)
Thread Length: 0.320" (8.13mm)
auf Bestellung 531 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.94 EUR
10+ 3.7 EUR
100+ 3.46 EUR
250+ 3.41 EUR
Mindestbestellmenge: 6
IPG-2227-BPGBud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Bend Proof (PG-7) .12 to .24"
auf Bestellung 106 Stücke:
Lieferzeit 14-28 Tag (e)
12+4.6 EUR
16+ 3.43 EUR
250+ 3.3 EUR
Mindestbestellmenge: 12
IPG-2227-GBud IndustriesDescription: CABLE GLAND 3-6MM PG7 NYLON
Packaging: Bulk
Color: Gray
Material: Polyamide (PA), Nylon
Thread Size: PG7
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 0.490" (12.4mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.240" (6.10mm)
Outside Cable Diameter (Min): 0.120" (3.05mm)
Thread Length: 0.320" (8.13mm)
auf Bestellung 5951 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.2 EUR
30+ 0.89 EUR
100+ 0.83 EUR
250+ 0.74 EUR
Mindestbestellmenge: 22
IPG-2227-GBud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thin Wall - Gray (PG-7) .12 to .24"
auf Bestellung 1803 Stücke:
Lieferzeit 14-28 Tag (e)
46+1.14 EUR
61+ 0.86 EUR
100+ 0.79 EUR
Mindestbestellmenge: 46
IPG-2227-GBUD INDUSTRIESDescription: BUD INDUSTRIES - IPG-2227-G - CABLE GLAND, NYLON, 6MM, GREY
tariffCode: 85472000
Gewindemaß - Imperial: PG7
productTraceability: Yes-Date/Lot Code
Material der Kabelverschraubung: Nylon (Polyamide)
rohsCompliant: YES
Kabeldurchmesser, min.: 3mm
Gewindemaß - Metrisch: -
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
IP- / NEMA-Schutzart: IP66
Farbe d. Kabelverschraubung: Grey
usEccn: EAR99
Kabeldurchmesser, max.: 6mm
Produktpalette: -
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
IPG-22274-GBud IndustriesDescription: CABLE GLAND 3-6MM PG7 NYLON
Packaging: Bulk
Color: Gray
Material: Polyamide (PA), Nylon
Thread Size: PG7
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 0.470" (11.9mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.240" (6.10mm)
Outside Cable Diameter (Min): 0.120" (3.05mm)
Thread Length: 0.590" (14.99mm)
auf Bestellung 3759 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.69 EUR
21+ 1.26 EUR
100+ 1.2 EUR
Mindestbestellmenge: 16
IPG-22274-GBud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thick Wall - Gray (PG-7) .12 to .24"
auf Bestellung 179 Stücke:
Lieferzeit 14-28 Tag (e)
31+1.69 EUR
41+ 1.27 EUR
100+ 1.26 EUR
Mindestbestellmenge: 31
IPG-2229Bud IndustriesDescription: CABLE GLAND 4.1-7.9MM PG9 NYLON
Packaging: Bulk
Color: Black
Material: Polyamide (PA), Nylon
Thread Size: PG9
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 0.600" (15.2mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.310" (7.87mm)
Outside Cable Diameter (Min): 0.160" (4.06mm)
Thread Length: 0.320" (8.13mm)
auf Bestellung 1655 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.69 EUR
21+ 1.26 EUR
100+ 1.2 EUR
Mindestbestellmenge: 16
IPG-2229Bud IndustriesCable Glands, Strain Reliefs & Cord Grips NYLON CABLE GLAND WI RE DIA 0.16- 0.31"
auf Bestellung 8 Stücke:
Lieferzeit 14-28 Tag (e)
IPG-2229-BPGBud IndustriesDescription: CABLE GLAND 4.1-7.9MM PG9 NYLON
Packaging: Bulk
Color: Gray
Material: Polyamide (PA), Nylon
Thread Size: PG9
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 0.600" (15.2mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.310" (7.87mm)
Outside Cable Diameter (Min): 0.160" (4.06mm)
Thread Length: 0.320" (8.13mm)
auf Bestellung 373 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.24 EUR
10+ 4.68 EUR
100+ 4.39 EUR
Mindestbestellmenge: 5
IPG-2229-BPGBud IndustriesCable Glands, Strain Reliefs & Cord Grips CBL GLAND/BEND PROOF WIRE DIA 0.16- 0.31
auf Bestellung 16 Stücke:
Lieferzeit 14-28 Tag (e)
IPG-2229-GBud IndustriesDescription: CABLE GLAND 4.1-7.9MM PG9 NYLON
Packaging: Bulk
Color: Gray
Material: Polyamide (PA), Nylon
Thread Size: PG9
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 0.600" (15.2mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Part Status: Active
Outside Cable Diameter (Max): 0.310" (7.87mm)
Outside Cable Diameter (Min): 0.160" (4.06mm)
Thread Length: 0.320" (8.13mm)
auf Bestellung 9187 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.69 EUR
21+ 1.26 EUR
100+ 1.2 EUR
Mindestbestellmenge: 16
IPG-2229-GBud IndustriesCable Glands, Strain Reliefs & Cord Grips NYLON CABLE GLAND WI RE DIA 0.16- 0.31"
auf Bestellung 60 Stücke:
Lieferzeit 14-28 Tag (e)
IPG-22294-GBud IndustriesDescription: CABLE GLAND 4.06-7.87MM PG9
Packaging: Bulk
Color: Gray
Material: Polyamide (PA), Nylon
Thread Size: PG9
Type: Cable Gland
Operating Temperature: -20°C ~ 65°C
Panel Hole Size: 0.630" (16.0mm)
Includes: Gasket
Ingress Protection: IP66 - Dust Tight, Water Resistant
Outside Cable Diameter (Max): 0.310" (7.87mm)
Outside Cable Diameter (Min): 0.160" (4.06mm)
Thread Length: 0.590" (14.99mm)
auf Bestellung 32930 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.16 EUR
16+ 1.65 EUR
Mindestbestellmenge: 13
IPG-22294-GBud IndustriesCable Glands, Strain Reliefs & Cord Grips IP66 Nylon Cable Gland - Thick Wall - Gray (PG-9) .16 to .31"
auf Bestellung 10564 Stücke:
Lieferzeit 14-28 Tag (e)
24+2.18 EUR
31+ 1.73 EUR
Mindestbestellmenge: 24
IPG1-25828-1Sensata-AirpaxDescription: CIRCUIT BREAKER MAG-HYDR LEVER
Produkt ist nicht verfügbar
IPG1-25828-3Sensata-AirpaxDescription: CIRCUIT BREAKER MAG-HYDR LEVER
Produkt ist nicht verfügbar
IPG1-25828-6Sensata-AirpaxDescription: CIRCUIT BREAKER MAG-HYDR LEVER
Produkt ist nicht verfügbar
IPG1-30037-1Sensata-AirpaxDescription: CIRCUIT BREAKER MAG-HYDR LEVER
Packaging: Bulk
Mounting Type: Panel Mount
Actuator Type: Lever
Breaker Type: Magnetic (Hydraulic Delay)
Number of Poles: 1
Produkt ist nicht verfügbar
IPG15N06S3L-45Infineon TechnologiesDescription: MOSFET 2N-CH 55V 15A TDSON-8
Produkt ist nicht verfügbar
IPG16N10S4-61
Produktcode: 177704		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IPG16N10S4-61Infineon TechnologiesMOSFET MOSFET
auf Bestellung 9885 Stücke:
Lieferzeit 14-28 Tag (e)
22+2.42 EUR
27+ 1.98 EUR
100+ 1.54 EUR
500+ 1.31 EUR
1000+ 1.14 EUR
Mindestbestellmenge: 22
IPG16N10S461AATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG16N10S461AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 100V 16A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 9µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9349 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.99 EUR
11+ 2.46 EUR
100+ 1.91 EUR
500+ 1.62 EUR
1000+ 1.32 EUR
2000+ 1.24 EUR
Mindestbestellmenge: 9
IPG16N10S461AATMA1Infineon TechnologiesMOSFET MOSFET_(75V 120V(
auf Bestellung 4870 Stücke:
Lieferzeit 14-28 Tag (e)
18+2.99 EUR
22+ 2.47 EUR
100+ 1.92 EUR
500+ 1.63 EUR
1000+ 1.25 EUR
5000+ 1.19 EUR
Mindestbestellmenge: 18
IPG16N10S461AATMA1Infineon
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
IPG16N10S461AATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG16N10S461AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 100V 16A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 9µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.18 EUR
Mindestbestellmenge: 5000
IPG16N10S461ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 100V 16A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 9µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.15 EUR
10000+ 1.09 EUR
Mindestbestellmenge: 5000
IPG16N10S461ATMA1Infineon TechnologiesMOSFET MOSFET
auf Bestellung 19864 Stücke:
Lieferzeit 14-28 Tag (e)
21+2.49 EUR
27+ 2 EUR
100+ 1.64 EUR
500+ 1.4 EUR
1000+ 1.18 EUR
2500+ 1.17 EUR
5000+ 1.14 EUR
Mindestbestellmenge: 21
IPG16N10S461ATMA1Infineon TechnologiesN-канальний ПТ; Udss, В = 100; Id = 16 А; Ciss, пФ @ Uds, В = 490 @ 25; Qg, нКл = 7; Rds = 61 @ 16 А; 10 В мОм; Ugs(th) = 3,5 В; Р, Вт = 29; Тексп, °C = -55...+175; Тип монт. = smd; PowerVDFN-8
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
2+3.72 EUR
10+ 3.21 EUR
100+ 2.82 EUR
Mindestbestellmenge: 2
IPG16N10S461ATMA1INFINEONDescription: INFINEON - IPG16N10S461ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 16 A, 0.053 ohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.8V
euEccn: NLR
Verlustleistung: 29W
Bauform - Transistor: TDSON
Anzahl der Pins: 3Pin(s)
Produktpalette: OptiMOS T2
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.053ohm
auf Bestellung 4579 Stücke:
Lieferzeit 14-21 Tag (e)
IPG16N10S461ATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON EP T/R
auf Bestellung 3875 Stücke:
Lieferzeit 14-21 Tag (e)
87+1.81 EUR
97+ 1.57 EUR
101+ 1.45 EUR
126+ 1.12 EUR
250+ 0.97 EUR
500+ 0.85 EUR
1000+ 0.63 EUR
3000+ 0.6 EUR
Mindestbestellmenge: 87
IPG16N10S461ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 100V 16A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 9µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14418 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.91 EUR
11+ 2.38 EUR
100+ 1.85 EUR
500+ 1.57 EUR
1000+ 1.28 EUR
2000+ 1.2 EUR
Mindestbestellmenge: 9
IPG16N10S461ATMA1INFINEONDescription: INFINEON - IPG16N10S461ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 16 A, 0.053 ohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.8V
euEccn: NLR
Verlustleistung: 29W
Bauform - Transistor: TDSON
Anzahl der Pins: 3Pin(s)
Produktpalette: OptiMOS T2
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.053ohm
auf Bestellung 4579 Stücke:
Lieferzeit 14-21 Tag (e)
IPG16N10S461ATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON EP T/R
auf Bestellung 3875 Stücke:
Lieferzeit 14-21 Tag (e)
97+1.63 EUR
101+ 1.5 EUR
126+ 1.16 EUR
250+ 1.01 EUR
500+ 0.89 EUR
1000+ 0.65 EUR
3000+ 0.6 EUR
Mindestbestellmenge: 97
IPG16N10S461ATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG16N10S461ATMA1
Produktcode: 155670		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IPG16N10S4L61AATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON T/R
Produkt ist nicht verfügbar
IPG16N10S4L61AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 100V 16A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 25V
Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 90µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.18 EUR
Mindestbestellmenge: 5000
IPG16N10S4L61AATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON T/R
Produkt ist nicht verfügbar
IPG16N10S4L61AATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON T/R
Produkt ist nicht verfügbar
IPG16N10S4L61AATMA1Infineon TechnologiesMOSFET MOSFET_(75V 120V(
auf Bestellung 1970 Stücke:
Lieferzeit 14-28 Tag (e)
18+3.02 EUR
21+ 2.49 EUR
100+ 1.92 EUR
500+ 1.63 EUR
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5000+ 1.19 EUR
10000+ 1.18 EUR
Mindestbestellmenge: 18
IPG16N10S4L61AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 100V 16A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 25V
Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 90µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14019 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.99 EUR
11+ 2.46 EUR
100+ 1.91 EUR
500+ 1.62 EUR
1000+ 1.32 EUR
2000+ 1.24 EUR
Mindestbestellmenge: 9
IPG2-2020A5P167SICK, Inc.Description: IP-HOUSING
Packaging: Bulk
For Use With/Related Products: Sensor
Accessory Type: Pipe
Produkt ist nicht verfügbar
IPG20N04S4-08Infineon TechnologiesMOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
auf Bestellung 9871 Stücke:
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14+3.93 EUR
16+ 3.28 EUR
100+ 2.59 EUR
250+ 2.4 EUR
500+ 2.18 EUR
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2500+ 1.77 EUR
Mindestbestellmenge: 14
IPG20N04S4-08Infineon TechnologiesDescription: IPG20N04 - 20V-40V N-CHANNEL AUT
Produkt ist nicht verfügbar
IPG20N04S4-09Infineon TechnologiesMOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
auf Bestellung 10000 Stücke:
Lieferzeit 378-392 Tag (e)
14+3.9 EUR
15+ 3.51 EUR
100+ 2.73 EUR
500+ 2.26 EUR
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IPG20N04S4-12Infineon TechnologiesMOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
auf Bestellung 27816 Stücke:
Lieferzeit 14-28 Tag (e)
18+2.94 EUR
25+ 2.16 EUR
100+ 1.59 EUR
500+ 1.38 EUR
1000+ 1.24 EUR
2500+ 1.22 EUR
5000+ 1.16 EUR
Mindestbestellmenge: 18
IPG20N04S408AATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N04S408AATMA1Infineon TechnologiesMOSFET MOSFET
auf Bestellung 322 Stücke:
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10+5.62 EUR
11+ 4.97 EUR
100+ 4.08 EUR
250+ 4 EUR
Mindestbestellmenge: 10
IPG20N04S408AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4071 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.29 EUR
10+ 3.57 EUR
100+ 2.84 EUR
500+ 2.41 EUR
1000+ 2.04 EUR
2000+ 1.94 EUR
Mindestbestellmenge: 7
IPG20N04S408AATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N04S408AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPG20N04S408AATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N04S408ATMA1INFINEON TECHNOLOGIESCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 65W
Gate charge: 28nC
Drain-source voltage: 40V
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
On-state resistance: 7.6mΩ
Drain current: 20A
Polarisation: unipolar
Produkt ist nicht verfügbar
IPG20N04S408ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.69 EUR
Mindestbestellmenge: 5000
IPG20N04S408ATMA1INFINEONDescription: INFINEON - IPG20N04S408ATMA1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 20 A, 20 A, 0.007 ohm
tariffCode: 85412900
Wandlerpolarität: n-Kanal
Betriebstemperatur, max.: 175°C
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand, p-Kanal: 0.007ohm
Anzahl der Pins: 8Pin(s)
Dauer-Drainstrom Id, p-Kanal: 20A
Dauer-Drainstrom Id, n-Kanal: 20A
MSL: MSL 1 - unbegrenzt
hazardous: false
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Produktpalette: OptiMOS T2 Series
Bauform - Transistor: TDSON
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
rohsCompliant: YES
Verlustleistung, n-Kanal: 65W
Drain-Source-Spannung Vds: 40V
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 40V
Verlustleistung, p-Kanal: 65W
Drain-Source-Spannung Vds, n-Kanal: 40V
Drain-Source-Durchgangswiderstand, n-Kanal: 0.007ohm
Dauer-Drainstrom Id: 20A
rohsPhthalatesCompliant: YES
Betriebswiderstand, Rds(on): 0.007ohm
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
usEccn: EAR99
Transistormontage: Oberflächenmontage
Verlustleistung Pd: 65W
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N04S408ATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N04S408ATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N04S408ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 14164 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.93 EUR
10+ 3.24 EUR
100+ 2.58 EUR
500+ 2.18 EUR
1000+ 1.85 EUR
2000+ 1.76 EUR
Mindestbestellmenge: 7
IPG20N04S408ATMA1INFINEON TECHNOLOGIESCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 65W
Gate charge: 28nC
Drain-source voltage: 40V
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
On-state resistance: 7.6mΩ
Drain current: 20A
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPG20N04S408ATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N04S408ATMA1INFINEONDescription: INFINEON - IPG20N04S408ATMA1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 20 A, 20 A, 0.007 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 40V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 20A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.007ohm
Verlustleistung, p-Kanal: 65W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Produktpalette: OptiMOS T2 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.007ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 65W
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N04S408BATMA1Infineon TechnologiesIPG20N04S408BATMA1
Produkt ist nicht verfügbar
IPG20N04S408BATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4998 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.93 EUR
10+ 3.28 EUR
100+ 2.61 EUR
500+ 2.21 EUR
1000+ 1.87 EUR
2000+ 1.78 EUR
Mindestbestellmenge: 7
IPG20N04S408BATMA1Infineon TechnologiesMOSFET MOSFET_(20V 40V)
Produkt ist nicht verfügbar
IPG20N04S408BATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPG20N04S409AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 22µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.44 EUR
Mindestbestellmenge: 5000
IPG20N04S409AATMA1Infineon TechnologiesMOSFET MOSFET_(20V 40V)
Produkt ist nicht verfügbar
IPG20N04S409AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 22µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.64 EUR
10+ 2.99 EUR
100+ 2.32 EUR
500+ 1.97 EUR
1000+ 1.6 EUR
2000+ 1.51 EUR
Mindestbestellmenge: 8
IPG20N04S409AATMA1Infineon TechnologiesSP001200172
Produkt ist nicht verfügbar
IPG20N04S409ATMA1Infineon TechnologiesDescription: MOSFET N-CHANNEL_30/40V
Produkt ist nicht verfügbar
IPG20N04S409ATMA1INFINEON TECHNOLOGIESCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W
Mounting: SMD
Case: PG-TDSON-8
Polarisation: unipolar
Gate charge: 21.7nC
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 8.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 54W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPG20N04S409ATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
auf Bestellung 460000 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N04S409ATMA1Infineon TechnologiesDescription: MOSFET N-CHANNEL_30/40V
Produkt ist nicht verfügbar
IPG20N04S409ATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N04S409ATMA1INFINEON TECHNOLOGIESCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W
Mounting: SMD
Case: PG-TDSON-8
Polarisation: unipolar
Gate charge: 21.7nC
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 8.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 54W
Produkt ist nicht verfügbar
IPG20N04S409ATMA1Infineon TechnologiesMOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
auf Bestellung 2900 Stücke:
Lieferzeit 378-392 Tag (e)
14+3.93 EUR
5000+ 1.96 EUR
Mindestbestellmenge: 14
IPG20N04S409ATMA1Infineon TechnologiesDescription: MOSFET N-CHANNEL_30/40V
Produkt ist nicht verfügbar
IPG20N04S409ATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N04S412AATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N04S412AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 28559 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.02 EUR
11+ 2.48 EUR
100+ 1.92 EUR
500+ 1.63 EUR
1000+ 1.33 EUR
2000+ 1.25 EUR
Mindestbestellmenge: 9
IPG20N04S412AATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N04S412AATMA1Infineon TechnologiesMOSFET MOSFET
auf Bestellung 28955 Stücke:
Lieferzeit 14-28 Tag (e)
18+3.02 EUR
23+ 2.33 EUR
100+ 1.9 EUR
500+ 1.64 EUR
1000+ 1.26 EUR
5000+ 1.2 EUR
10000+ 1.19 EUR
Mindestbestellmenge: 18
IPG20N04S412AATMA1INFINEONDescription: INFINEON - IPG20N04S412AATMA1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 20 A, 20 A, 0.011 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 40V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 20A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.011ohm
Verlustleistung, p-Kanal: 41W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS T2 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.011ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 41W
Betriebstemperatur, max.: 175°C
auf Bestellung 3927 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N04S412AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.19 EUR
10000+ 1.14 EUR
Mindestbestellmenge: 5000
IPG20N04S412AATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N04S412AATMA1Infineon
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IPG20N04S412ATMA1Infineon TechnologiesMOSFET MOSFET_(20V 40V)
Produkt ist nicht verfügbar
IPG20N04S412ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPG20N04S412ATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N04S412ATMA1Infineon
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
IPG20N04S412ATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N04S412ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPG20N04S412ATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N04S418AATMA1Infineon TechnologiesSP003127446
Produkt ist nicht verfügbar
IPG20N04S418AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 789pF @ 25V
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 8µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPG20N04S418AATMA1Infineon TechnologiesIPG20N04S418AATMA1
Produkt ist nicht verfügbar
IPG20N04S418AATMA1Infineon TechnologiesMOSFET MOSFET_(20V 40V)
auf Bestellung 4994 Stücke:
Lieferzeit 14-28 Tag (e)
22+2.42 EUR
27+ 1.98 EUR
100+ 1.54 EUR
500+ 1.31 EUR
1000+ 1.06 EUR
2500+ 1.05 EUR
5000+ 0.95 EUR
Mindestbestellmenge: 22
IPG20N04S4L-07Infineon TechnologiesMOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
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16+3.25 EUR
20+ 2.7 EUR
100+ 2.33 EUR
250+ 2.29 EUR
500+ 2.03 EUR
1000+ 1.78 EUR
2500+ 1.74 EUR
Mindestbestellmenge: 16
IPG20N04S4L-08Infineon TechnologiesMOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
auf Bestellung 16701 Stücke:
Lieferzeit 14-28 Tag (e)
14+3.72 EUR
18+ 3.04 EUR
100+ 2.37 EUR
500+ 2.01 EUR
1000+ 1.74 EUR
5000+ 1.47 EUR
10000+ 1.45 EUR
Mindestbestellmenge: 14
IPG20N04S4L-11Infineon
auf Bestellung 105000 Stücke:
Lieferzeit 21-28 Tag (e)
IPG20N04S4L-11Infineon TechnologiesMOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
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18+2.94 EUR
22+ 2.41 EUR
100+ 1.88 EUR
500+ 1.59 EUR
1000+ 1.22 EUR
5000+ 1.16 EUR
10000+ 1.15 EUR
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IPG20N04S4L-11AInfineon TechnologiesMOSFET MOSFET_(20V 40V)
auf Bestellung 3590 Stücke:
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18+3.02 EUR
22+ 2.47 EUR
100+ 1.94 EUR
500+ 1.64 EUR
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2500+ 1.26 EUR
5000+ 1.2 EUR
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IPG20N04S4L07AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPG20N04S4L07AATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
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IPG20N04S4L07AATMA1Infineon TechnologiesMOSFET N-Ch 40V 20A TDSON-8
auf Bestellung 14651 Stücke:
Lieferzeit 14-28 Tag (e)
13+4 EUR
16+ 3.35 EUR
100+ 2.65 EUR
250+ 2.47 EUR
500+ 2.23 EUR
1000+ 1.84 EUR
2500+ 1.81 EUR
Mindestbestellmenge: 13
IPG20N04S4L07AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPG20N04S4L07AATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N04S4L07ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPG20N04S4L07ATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N04S4L07ATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N04S4L07ATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N04S4L07ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4230 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.93 EUR
10+ 3.24 EUR
100+ 2.58 EUR
500+ 2.18 EUR
1000+ 1.85 EUR
2000+ 1.76 EUR
Mindestbestellmenge: 7
IPG20N04S4L08AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 22µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.8 EUR
10+ 3.1 EUR
100+ 2.41 EUR
500+ 2.05 EUR
1000+ 1.67 EUR
2000+ 1.57 EUR
Mindestbestellmenge: 7
IPG20N04S4L08AATMA1Infineon TechnologiesMOSFET N-CHANNEL_30/40V
Produkt ist nicht verfügbar
IPG20N04S4L08AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 22µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.49 EUR
Mindestbestellmenge: 5000
IPG20N04S4L08AATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON T/R
Produkt ist nicht verfügbar
IPG20N04S4L08AATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON T/R
Produkt ist nicht verfügbar
IPG20N04S4L08AATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON T/R
Produkt ist nicht verfügbar
IPG20N04S4L08ATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N04S4L08ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 22µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 39648 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.69 EUR
10+ 3.02 EUR
100+ 2.35 EUR
500+ 1.99 EUR
1000+ 1.62 EUR
2000+ 1.53 EUR
Mindestbestellmenge: 8
IPG20N04S4L08ATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N04S4L08ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 22µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 35000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.46 EUR
10000+ 1.39 EUR
Mindestbestellmenge: 5000
IPG20N04S4L08ATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N04S4L08ATMA1Infineon TechnologiesMOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
auf Bestellung 13647 Stücke:
Lieferzeit 14-28 Tag (e)
15+3.69 EUR
18+ 3.02 EUR
100+ 2.37 EUR
500+ 2.01 EUR
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5000+ 1.47 EUR
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IPG20N04S4L11AATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
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IPG20N04S4L11AATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
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IPG20N04S4L11AATMA1Infineon TechnologiesMOSFET MOSFET_(20V 40V)
auf Bestellung 4830 Stücke:
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18+3.04 EUR
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Mindestbestellmenge: 18
IPG20N04S4L11AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPG20N04S4L11AATMA1
Produktcode: 158575		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IPG20N04S4L11AATMA1Infineon
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
IPG20N04S4L11AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPG20N04S4L11ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.15 EUR
Mindestbestellmenge: 5000
IPG20N04S4L11ATMA1INFINEON TECHNOLOGIESCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A
Mounting: SMD
Case: PG-TDSON-8-4
Polarisation: unipolar
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 80A
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 11.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 41W
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
IPG20N04S4L11ATMA1INFINEON TECHNOLOGIESCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A
Mounting: SMD
Case: PG-TDSON-8-4
Polarisation: unipolar
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 80A
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 11.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 41W
Produkt ist nicht verfügbar
IPG20N04S4L11ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 13069 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.94 EUR
11+ 2.4 EUR
100+ 1.86 EUR
500+ 1.58 EUR
1000+ 1.29 EUR
2000+ 1.21 EUR
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IPG20N04S4L11ATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
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IPG20N04S4L11ATMA1Infineon TechnologiesTrans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N04S4L18AATMA1Infineon TechnologiesMOSFET MOSFET_(20V 40V)
Produkt ist nicht verfügbar
IPG20N04S4L18AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1071pF @ 25V
Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 8µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPG20N04S4L18AATMA1Infineon TechnologiesSP003127442
Produkt ist nicht verfügbar
IPG20N04S4L18AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1071pF @ 25V
Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 8µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 4770 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.39 EUR
14+ 1.96 EUR
100+ 1.53 EUR
500+ 1.29 EUR
1000+ 1.05 EUR
2000+ 0.99 EUR
Mindestbestellmenge: 11
IPG20N06S2L-35Infineon TechnologiesMOSFET N-Ch 55V 20A TDSON-8 OptiMOS
auf Bestellung 4970 Stücke:
Lieferzeit 14-28 Tag (e)
16+3.41 EUR
20+ 2.65 EUR
100+ 2.16 EUR
500+ 1.85 EUR
1000+ 1.42 EUR
5000+ 1.34 EUR
Mindestbestellmenge: 16
IPG20N06S2L-35AATMA1Infineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 27µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Produkt ist nicht verfügbar
IPG20N06S2L-50Infineon TechnologiesMOSFET N-Ch 55V 20A TDSON-8 OptiMOS
auf Bestellung 3592 Stücke:
Lieferzeit 14-28 Tag (e)
19+2.86 EUR
24+ 2.19 EUR
100+ 1.8 EUR
500+ 1.57 EUR
1000+ 1.2 EUR
5000+ 1.14 EUR
Mindestbestellmenge: 19
IPG20N06S2L-65Infineon TechnologiesMOSFET N-Ch 55V 20A TDSON-8 OptiMOS
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21+2.56 EUR
27+ 1.97 EUR
100+ 1.61 EUR
500+ 1.39 EUR
1000+ 1.07 EUR
2500+ 1.06 EUR
5000+ 1.01 EUR
Mindestbestellmenge: 21
IPG20N06S2L35AATMA1Infineon TechnologiesTrans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R
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IPG20N06S2L35AATMA1Infineon TechnologiesMOSFET MOSFET
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15+3.56 EUR
18+ 2.94 EUR
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IPG20N06S2L35AATMA1Infineon TechnologiesTrans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R
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IPG20N06S2L35AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 27µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14710 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.56 EUR
10+ 2.92 EUR
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2000+ 1.47 EUR
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IPG20N06S2L35AATMA1Infineon TechnologiesTrans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R
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IPG20N06S2L35AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 27µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.4 EUR
10000+ 1.34 EUR
Mindestbestellmenge: 5000
IPG20N06S2L35ATMA1INFINEONDescription: INFINEON - IPG20N06S2L35ATMA1 - Dual-MOSFET, n-Kanal, 55 V, 55 V, 20 A, 20 A, 0.028 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 55V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 20A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.028ohm
Verlustleistung, p-Kanal: 65W
Drain-Source-Spannung Vds, n-Kanal: 55V
euEccn: NLR
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.028ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 65W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 23580 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N06S2L35ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 27µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.34 EUR
10000+ 1.28 EUR
Mindestbestellmenge: 5000
IPG20N06S2L35ATMA1Infineon TechnologiesTrans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N06S2L35ATMA1Infineon TechnologiesIPG20N06S2L35ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 55V 20A Automotive 8-Pin TDSON EP T/R - Arrow.com
Produkt ist nicht verfügbar
IPG20N06S2L35ATMA1INFINEONDescription: INFINEON - IPG20N06S2L35ATMA1 - Dual-MOSFET, n-Kanal, 55 V, 55 V, 20 A, 20 A, 0.028 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 55V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 20A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.028ohm
Verlustleistung, p-Kanal: 65W
Drain-Source-Spannung Vds, n-Kanal: 55V
euEccn: NLR
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.028ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 65W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 23580 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N06S2L35ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 27µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.41 EUR
10+ 2.79 EUR
100+ 2.17 EUR
500+ 1.84 EUR
1000+ 1.5 EUR
2000+ 1.41 EUR
Mindestbestellmenge: 8
IPG20N06S2L35ATMA1Infineon
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
IPG20N06S2L50AATMA1Infineon TechnologiesTrans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N06S2L50AATMA1Infineon TechnologiesTrans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N06S2L50AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 51W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 19µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.15 EUR
Mindestbestellmenge: 5000
IPG20N06S2L50AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 51W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 19µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.94 EUR
11+ 2.39 EUR
100+ 1.86 EUR
500+ 1.58 EUR
1000+ 1.29 EUR
2000+ 1.21 EUR
Mindestbestellmenge: 9
IPG20N06S2L50AATMA1Infineon TechnologiesMOSFET N-Ch 55V 20A TDSON-8
auf Bestellung 4998 Stücke:
Lieferzeit 14-28 Tag (e)
18+2.94 EUR
22+ 2.41 EUR
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5000+ 1.16 EUR
10000+ 1.15 EUR
Mindestbestellmenge: 18
IPG20N06S2L50ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 51W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 19µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.89 EUR
12+ 2.36 EUR
100+ 1.84 EUR
500+ 1.56 EUR
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IPG20N06S2L50ATMA1Infineon TechnologiesTrans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N06S2L50ATMA1Infineon
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
IPG20N06S2L50ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 51W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 19µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.14 EUR
10000+ 1.09 EUR
Mindestbestellmenge: 5000
IPG20N06S2L50ATMA1Infineon TechnologiesTrans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N06S2L50ATMA1Infineon TechnologiesTrans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N06S2L65AATMA1Infineon TechnologiesTrans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R
auf Bestellung 125000 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N06S2L65AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13998 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.65 EUR
12+ 2.17 EUR
100+ 1.69 EUR
500+ 1.43 EUR
1000+ 1.16 EUR
2000+ 1.1 EUR
Mindestbestellmenge: 10
IPG20N06S2L65AATMA1Infineon TechnologiesMOSFET MOSFET
Produkt ist nicht verfügbar
IPG20N06S2L65AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.04 EUR
10000+ 1 EUR
Mindestbestellmenge: 5000
IPG20N06S2L65AATMA1Infineon TechnologiesTrans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N06S2L65AAUMA1Infineon TechnologiesIPG20N06S2L-65A
Produkt ist nicht verfügbar
IPG20N06S2L65AAUMA1Infineon TechnologiesDescription: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W (Tc)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-10
Produkt ist nicht verfügbar
IPG20N06S2L65ATMA1Infineon TechnologiesTrans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N06S2L65ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 26886 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.55 EUR
13+ 2.09 EUR
100+ 1.63 EUR
500+ 1.38 EUR
1000+ 1.12 EUR
2000+ 1.06 EUR
Mindestbestellmenge: 11
IPG20N06S2L65ATMA1Infineon
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
IPG20N06S2L65ATMA1INFINEONDescription: INFINEON - IPG20N06S2L65ATMA1 - Dual-MOSFET, n-Kanal, 55 V, 55 V, 20 A, 20 A, 0.053 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 55V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 20A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.053ohm
Verlustleistung, p-Kanal: 43W
Drain-Source-Spannung Vds, n-Kanal: 55V
euEccn: NLR
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.053ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 43W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 4265 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N06S2L65ATMA1Infineon TechnologiesTrans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N06S2L65ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.01 EUR
10000+ 0.96 EUR
Mindestbestellmenge: 5000
IPG20N06S2L65ATMA1Infineon TechnologiesTrans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
3+61.53 EUR
Mindestbestellmenge: 3
IPG20N06S2L65ATMA1INFINEONDescription: INFINEON - IPG20N06S2L65ATMA1 - Dual-MOSFET, n-Kanal, 55 V, 55 V, 20 A, 20 A, 0.053 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 55V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 20A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.053ohm
Verlustleistung, p-Kanal: 43W
Drain-Source-Spannung Vds, n-Kanal: 55V
euEccn: NLR
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.053ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 43W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 4265 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N06S2L65AUMA1Infineon TechnologiesDescription: MOSFET
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
IPG20N06S3L-23Infineon TechnologiesDescription: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 45W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
Rds On (Max) @ Id, Vgs: 23mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TDSON-8-4
Produkt ist nicht verfügbar
IPG20N06S3L-35Infineon TechnologiesDescription: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 30W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Produkt ist nicht verfügbar
IPG20N06S3L23XTInfineon TechnologiesTrans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N06S4-15Infineon TechnologiesMOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
auf Bestellung 2674 Stücke:
Lieferzeit 14-28 Tag (e)
IPG20N06S415AATMA1Infineon TechnologiesTrans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N06S415AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)
IPG20N06S415AATMA1Infineon TechnologiesTrans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N06S415AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPG20N06S415AATMA1Infineon TechnologiesTrans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N06S415AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6405 Stücke:
Lieferzeit 21-28 Tag (e)
491+1.46 EUR
Mindestbestellmenge: 491
IPG20N06S415AATMA1Infineon TechnologiesMOSFET N-CHANNEL_55/60V
auf Bestellung 663 Stücke:
Lieferzeit 14-28 Tag (e)
13+4.11 EUR
15+ 3.67 EUR
100+ 2.86 EUR
500+ 2.36 EUR
1000+ 1.81 EUR
Mindestbestellmenge: 13
IPG20N06S415ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPG20N06S415ATMA2INFINEONDescription: INFINEON - IPG20N06S415ATMA2 - Dual-MOSFET, Zweifach n-Kanal, 60 V, 20 A, 0.0129 ohm
tariffCode: 85412900
rohsCompliant: Y-EX
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 20
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 60
euEccn: NLR
Bauform - Transistor: PG-TDSON
Anzahl der Pins: 8
Produktpalette: OptiMOS -T2 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0129
productTraceability: Yes-Date/Lot Code
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 50
Betriebstemperatur, max.: 175
SVHC: Lead (17-Jan-2023)
auf Bestellung 1990 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N06S415ATMA2Infineon TechnologiesMOSFET MOSFET
auf Bestellung 5858 Stücke:
Lieferzeit 14-28 Tag (e)
14+3.82 EUR
17+ 3.15 EUR
100+ 2.44 EUR
500+ 2.08 EUR
1000+ 1.6 EUR
5000+ 1.51 EUR
Mindestbestellmenge: 14
IPG20N06S415ATMA2Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4679 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.85 EUR
10+ 3.14 EUR
100+ 2.44 EUR
500+ 2.07 EUR
1000+ 1.69 EUR
2000+ 1.59 EUR
Mindestbestellmenge: 7
IPG20N06S415ATMA2INFINEONDescription: INFINEON - IPG20N06S415ATMA2 - Dual-MOSFET, Zweifach n-Kanal, 60 V, 20 A, 0.0129 ohm
tariffCode: 85412900
rohsCompliant: Y-EX
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 20
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 60
euEccn: NLR
Bauform - Transistor: PG-TDSON
Anzahl der Pins: 8
Produktpalette: OptiMOS -T2 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0129
productTraceability: Yes-Date/Lot Code
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 50
Betriebstemperatur, max.: 175
SVHC: Lead (17-Jan-2023)
auf Bestellung 1990 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N06S415ATMA2Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPG20N06S415ATMA2Infineon TechnologiesTrans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N06S4L-11Infineon TechnologiesMOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
auf Bestellung 7055 Stücke:
Lieferzeit 14-28 Tag (e)
13+4.06 EUR
16+ 3.38 EUR
100+ 2.68 EUR
250+ 2.47 EUR
500+ 2.26 EUR
1000+ 1.93 EUR
2500+ 1.84 EUR
Mindestbestellmenge: 13
IPG20N06S4L-14Infineon
auf Bestellung 95092 Stücke:
Lieferzeit 21-28 Tag (e)
IPG20N06S4L-26Infineon
auf Bestellung 55000 Stücke:
Lieferzeit 21-28 Tag (e)
IPG20N06S4L-26Infineon TechnologiesMOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
auf Bestellung 24070 Stücke:
Lieferzeit 14-28 Tag (e)
20+2.63 EUR
25+ 2.16 EUR
100+ 1.68 EUR
500+ 1.42 EUR
1000+ 1.16 EUR
5000+ 1.03 EUR
Mindestbestellmenge: 20
IPG20N06S4L-26AInfineon TechnologiesMOSFET N-Ch 55V 20A TDSON-8
auf Bestellung 14984 Stücke:
Lieferzeit 14-28 Tag (e)
20+2.6 EUR
25+ 2.14 EUR
100+ 1.67 EUR
500+ 1.41 EUR
1000+ 1.15 EUR
5000+ 1.07 EUR
Mindestbestellmenge: 20
IPG20N06S4L11AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPG20N06S4L11AATMA1Infineon TechnologiesTrans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON T/R
Produkt ist nicht verfügbar
IPG20N06S4L11AATMA1Infineon TechnologiesTrans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON T/R
Produkt ist nicht verfügbar
IPG20N06S4L11AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2920 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.13 EUR
10+ 3.43 EUR
100+ 2.73 EUR
500+ 2.31 EUR
1000+ 1.96 EUR
2000+ 1.86 EUR
Mindestbestellmenge: 7
IPG20N06S4L11AATMA1Infineon TechnologiesMOSFET N-CHANNEL_55/60V
auf Bestellung 3056 Stücke:
Lieferzeit 14-28 Tag (e)
13+4.16 EUR
16+ 3.46 EUR
100+ 2.76 EUR
250+ 2.73 EUR
500+ 2.31 EUR
1000+ 1.88 EUR
Mindestbestellmenge: 13
IPG20N06S4L11ATMA1Infineon TechnologiesTrans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N06S4L11ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPG20N06S4L11ATMA1Infineon TechnologiesTrans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R
auf Bestellung 1737 Stücke:
Lieferzeit 14-21 Tag (e)
2+127.05 EUR
Mindestbestellmenge: 2
IPG20N06S4L11ATMA1Infineon TechnologiesTrans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N06S4L11ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 4714 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.06 EUR
10+ 3.37 EUR
100+ 2.68 EUR
500+ 2.27 EUR
1000+ 1.92 EUR
2000+ 1.83 EUR
Mindestbestellmenge: 7
IPG20N06S4L11ATMA1Infineon
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
IPG20N06S4L11ATMA2Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 42089 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.06 EUR
10+ 3.37 EUR
100+ 2.68 EUR
500+ 2.27 EUR
1000+ 1.92 EUR
2000+ 1.83 EUR
Mindestbestellmenge: 7
IPG20N06S4L11ATMA2Infineon TechnologiesMOSFET MOSFET_)40V 60V)
auf Bestellung 5040 Stücke:
Lieferzeit 14-28 Tag (e)
13+4.06 EUR
16+ 3.38 EUR
100+ 2.68 EUR
250+ 2.47 EUR
500+ 2.26 EUR
1000+ 1.93 EUR
2500+ 1.84 EUR
Mindestbestellmenge: 13
IPG20N06S4L11ATMA2Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 39150 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.76 EUR
10000+ 1.7 EUR
Mindestbestellmenge: 5000
IPG20N06S4L11ATMA2Infineon TechnologiesSP001404020
Produkt ist nicht verfügbar
IPG20N06S4L14AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 31287 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.61 EUR
10+ 3 EUR
100+ 2.38 EUR
500+ 2.02 EUR
1000+ 1.71 EUR
2000+ 1.63 EUR
Mindestbestellmenge: 8
IPG20N06S4L14AATMA1Infineon TechnologiesTrans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N06S4L14AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.56 EUR
10000+ 1.51 EUR
Mindestbestellmenge: 5000
IPG20N06S4L14AATMA1Infineon TechnologiesMOSFET MOSFET_)40V 60V)
auf Bestellung 2597 Stücke:
Lieferzeit 14-28 Tag (e)
20+2.6 EUR
23+ 2.28 EUR
100+ 1.96 EUR
250+ 1.95 EUR
500+ 1.79 EUR
1000+ 1.62 EUR
2500+ 1.6 EUR
Mindestbestellmenge: 20
IPG20N06S4L14AATMA1Infineon TechnologiesTrans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R
auf Bestellung 401 Stücke:
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73+2.14 EUR
88+ 1.72 EUR
89+ 1.64 EUR
90+ 1.56 EUR
116+ 1.16 EUR
250+ 0.78 EUR
Mindestbestellmenge: 73
IPG20N06S4L14ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPG20N06S4L14ATMA1Infineon TechnologiesTrans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N06S4L14ATMA2Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.55 EUR
Mindestbestellmenge: 5000
IPG20N06S4L14ATMA2Infineon TechnologiesTrans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N06S4L14ATMA2Infineon TechnologiesMOSFET MOSFET
Produkt ist nicht verfügbar
IPG20N06S4L14ATMA2Infineon TechnologiesTrans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N06S4L14ATMA2Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9552 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.93 EUR
10+ 3.22 EUR
100+ 2.51 EUR
500+ 2.12 EUR
1000+ 1.73 EUR
2000+ 1.63 EUR
Mindestbestellmenge: 7
IPG20N06S4L26AATMA1Infineon TechnologiesTrans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N06S4L26AATMA1Infineon TechnologiesMOSFET N-Ch 55V 20A TDSON-8
auf Bestellung 2525 Stücke:
Lieferzeit 14-28 Tag (e)
20+2.7 EUR
24+ 2.23 EUR
100+ 1.74 EUR
500+ 1.47 EUR
1000+ 1.2 EUR
2500+ 1.13 EUR
5000+ 1.08 EUR
Mindestbestellmenge: 20
IPG20N06S4L26AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPG20N06S4L26AATMA1Infineon TechnologiesTrans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N06S4L26AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPG20N06S4L26AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2082 Stücke:
Lieferzeit 21-28 Tag (e)
613+1.18 EUR
Mindestbestellmenge: 613
IPG20N06S4L26AATMA1Infineon TechnologiesTrans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N06S4L26ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 17336 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.63 EUR
13+ 2.14 EUR
100+ 1.67 EUR
500+ 1.41 EUR
1000+ 1.15 EUR
2000+ 1.08 EUR
Mindestbestellmenge: 10
IPG20N06S4L26ATMA1Infineon TechnologiesTrans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R
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IPG20N06S4L26ATMA1Infineon
auf Bestellung 10000 Stücke:
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IPG20N06S4L26ATMA1Infineon TechnologiesTrans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R
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IPG20N06S4L26ATMA1Infineon TechnologiesMOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
auf Bestellung 85438 Stücke:
Lieferzeit 14-28 Tag (e)
25+2.15 EUR
31+ 1.73 EUR
100+ 1.42 EUR
500+ 1.27 EUR
1000+ 1.09 EUR
2500+ 1.05 EUR
5000+ 1.03 EUR
Mindestbestellmenge: 25
IPG20N06S4L26ATMA1INFINEONDescription: INFINEON - IPG20N06S4L26ATMA1 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 20 A, 20 A, 0.021 ohm
tariffCode: 85412900
Wandlerpolarität: n-Kanal
Betriebstemperatur, max.: 175°C
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand, p-Kanal: 0.021ohm
Anzahl der Pins: 8Pin(s)
Dauer-Drainstrom Id, p-Kanal: 20A
Dauer-Drainstrom Id, n-Kanal: 20A
MSL: MSL 1 - unbegrenzt
hazardous: false
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Produktpalette: -
Bauform - Transistor: TDSON
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
rohsCompliant: YES
Verlustleistung, n-Kanal: 33W
Drain-Source-Spannung Vds: 60V
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 60V
Verlustleistung, p-Kanal: 33W
Drain-Source-Spannung Vds, n-Kanal: 60V
Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm
Dauer-Drainstrom Id: 20A
rohsPhthalatesCompliant: YES
Betriebswiderstand, Rds(on): 0.021ohm
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
usEccn: EAR99
Transistormontage: Oberflächenmontage
Verlustleistung Pd: 33W
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 19896 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N06S4L26ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.03 EUR
10000+ 0.98 EUR
Mindestbestellmenge: 5000
IPG20N06S4L26ATMA1Infineon TechnologiesTrans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R
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IPG20N10S436AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 35000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.55 EUR
10000+ 1.48 EUR
Mindestbestellmenge: 5000
IPG20N10S436AATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R
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IPG20N10S436AATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N10S436AATMA1Infineon TechnologiesMOSFET N-CHANNEL 100+
auf Bestellung 4960 Stücke:
Lieferzeit 14-28 Tag (e)
14+3.95 EUR
17+ 3.12 EUR
100+ 2.49 EUR
500+ 2.14 EUR
1000+ 1.64 EUR
5000+ 1.55 EUR
Mindestbestellmenge: 14
IPG20N10S436AATMA1INFINEONDescription: INFINEON - IPG20N10S436AATMA1 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 20 A, 20 A, 0.031 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 20A
Dauer-Drainstrom Id, p-Kanal: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 100V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 20A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.031ohm
Verlustleistung, p-Kanal: 43W
euEccn: NLR
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS-T2 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.031ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 43W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N10S436AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 37720 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.93 EUR
10+ 3.22 EUR
100+ 2.51 EUR
500+ 2.12 EUR
1000+ 1.73 EUR
2000+ 1.63 EUR
Mindestbestellmenge: 7
IPG20N10S436AATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R
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IPG20N10S436AATMA1INFINEONDescription: INFINEON - IPG20N10S436AATMA1 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 20 A, 20 A, 0.031 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 20A
Dauer-Drainstrom Id, p-Kanal: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 100V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 20A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.031ohm
Verlustleistung, p-Kanal: 43W
euEccn: NLR
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS-T2 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.031ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 43W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N10S4L-22Infineon TechnologiesMOSFET MOSFET
auf Bestellung 245 Stücke:
Lieferzeit 14-28 Tag (e)
12+4.34 EUR
15+ 3.64 EUR
100+ 2.91 EUR
250+ 2.65 EUR
500+ 2.41 EUR
1000+ 2.15 EUR
5000+ 1.9 EUR
Mindestbestellmenge: 12
IPG20N10S4L-22AInfineon
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
IPG20N10S4L-22AInfineon TechnologiesMOSFET MOSFET_(75V 120V(
auf Bestellung 5065 Stücke:
Lieferzeit 14-28 Tag (e)
12+4.42 EUR
15+ 3.67 EUR
100+ 2.94 EUR
250+ 2.7 EUR
500+ 2.44 EUR
1000+ 2.11 EUR
2500+ 2 EUR
Mindestbestellmenge: 12
IPG20N10S4L-35Infineon TechnologiesMOSFET MOSFET
auf Bestellung 7965 Stücke:
Lieferzeit 14-28 Tag (e)
14+3.8 EUR
17+ 3.12 EUR
100+ 2.42 EUR
500+ 2.06 EUR
1000+ 1.68 EUR
2500+ 1.58 EUR
5000+ 1.51 EUR
Mindestbestellmenge: 14
IPG20N10S4L22AATMA1INFINEONDescription: INFINEON - IPG20N10S4L22AATMA1 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 20 A, 20 A, 0.02 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 100V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 20A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.02ohm
Verlustleistung, p-Kanal: 60W
Drain-Source-Spannung Vds, n-Kanal: 100V
euEccn: NLR
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS T2 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 60W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 10429 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N10S4L22AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 60W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V
Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
auf Bestellung 21797 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.42 EUR
10+ 3.67 EUR
100+ 2.92 EUR
500+ 2.47 EUR
1000+ 2.09 EUR
2000+ 1.99 EUR
Mindestbestellmenge: 6
IPG20N10S4L22AATMA1INFINEONDescription: INFINEON - IPG20N10S4L22AATMA1 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 20 A, 20 A, 0.02 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 100V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 20A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.02ohm
Verlustleistung, p-Kanal: 60W
Drain-Source-Spannung Vds, n-Kanal: 100V
euEccn: NLR
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS T2 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 60W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 10429 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N10S4L22AATMA1Infineon TechnologiesMOSFET MOSFET_(75V 120V(
auf Bestellung 4278 Stücke:
Lieferzeit 14-28 Tag (e)
15+3.64 EUR
18+ 2.99 EUR
100+ 2.63 EUR
250+ 2.59 EUR
500+ 2.3 EUR
1000+ 2 EUR
Mindestbestellmenge: 15
IPG20N10S4L22AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 60W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V
Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.91 EUR
10000+ 1.85 EUR
Mindestbestellmenge: 5000
IPG20N10S4L22AATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N10S4L22AATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N10S4L22ATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
94+1.67 EUR
95+ 1.6 EUR
121+ 1.2 EUR
200+ 1.11 EUR
1000+ 0.99 EUR
2000+ 0.91 EUR
5000+ 0.86 EUR
Mindestbestellmenge: 94
IPG20N10S4L22ATMA1Infineon TechnologiesMOSFET MOSFET
auf Bestellung 5580 Stücke:
Lieferzeit 14-28 Tag (e)
13+4.19 EUR
16+ 3.33 EUR
100+ 2.81 EUR
500+ 2.44 EUR
1000+ 1.97 EUR
2500+ 1.96 EUR
5000+ 1.9 EUR
Mindestbestellmenge: 13
IPG20N10S4L22ATMA1INFINEONDescription: INFINEON - IPG20N10S4L22ATMA1 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 20 A, 20 A, 0.02 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 100V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 20A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.02ohm
Verlustleistung, p-Kanal: 60W
Drain-Source-Spannung Vds, n-Kanal: 100V
euEccn: NLR
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS T2 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 60W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 51756 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N10S4L22ATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N10S4L22ATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N10S4L22ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 60W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V
Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 6653 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.32 EUR
10+ 3.59 EUR
100+ 2.86 EUR
500+ 2.42 EUR
1000+ 2.05 EUR
2000+ 1.95 EUR
Mindestbestellmenge: 7
IPG20N10S4L22ATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R
auf Bestellung 172 Stücke:
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67+2.33 EUR
78+ 1.94 EUR
79+ 1.85 EUR
100+ 1.4 EUR
Mindestbestellmenge: 67
IPG20N10S4L22ATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R
auf Bestellung 11276 Stücke:
Lieferzeit 14-21 Tag (e)
103+1.52 EUR
108+ 1.4 EUR
121+ 1.2 EUR
200+ 1.11 EUR
1000+ 0.99 EUR
2000+ 0.91 EUR
5000+ 0.86 EUR
10000+ 0.84 EUR
Mindestbestellmenge: 103
IPG20N10S4L22ATMA1INFINEONDescription: INFINEON - IPG20N10S4L22ATMA1 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 20 A, 20 A, 0.02 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 100V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 20A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.02ohm
Verlustleistung, p-Kanal: 60W
Drain-Source-Spannung Vds, n-Kanal: 100V
euEccn: NLR
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS T2 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.02ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 60W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 54518 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N10S4L22ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 60W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V
Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.88 EUR
Mindestbestellmenge: 5000
IPG20N10S4L22ATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)
67+2.33 EUR
78+ 1.94 EUR
79+ 1.85 EUR
100+ 1.4 EUR
Mindestbestellmenge: 67
IPG20N10S4L35AATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N10S4L35AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPG20N10S4L35AATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 20A 8-Pin TDSON EP T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
IPG20N10S4L35AATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 20A 8-Pin TDSON EP T/R Automotive AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
85+1.85 EUR
93+ 1.63 EUR
114+ 1.27 EUR
200+ 1.15 EUR
1000+ 0.97 EUR
2000+ 0.87 EUR
5000+ 0.81 EUR
Mindestbestellmenge: 85
IPG20N10S4L35AATMA1INFINEONDescription: INFINEON - IPG20N10S4L35AATMA1 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 20 A, 20 A, 0.029 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 20A
Dauer-Drainstrom Id, p-Kanal: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 100V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 20A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.029ohm
Verlustleistung, p-Kanal: 43W
euEccn: NLR
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: Produktreihe OptiMOS T2
Drain-Source-Durchgangswiderstand, n-Kanal: 0.029ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 43W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N10S4L35AATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3095 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.9 EUR
10+ 3.19 EUR
100+ 2.48 EUR
500+ 2.1 EUR
1000+ 1.71 EUR
2000+ 1.61 EUR
Mindestbestellmenge: 7
IPG20N10S4L35AATMA1Infineon TechnologiesMOSFET MOSFET_(75V 120V(
auf Bestellung 4990 Stücke:
Lieferzeit 14-28 Tag (e)
14+3.9 EUR
17+ 3.2 EUR
100+ 2.49 EUR
500+ 2.12 EUR
1000+ 1.62 EUR
5000+ 1.54 EUR
Mindestbestellmenge: 14
IPG20N10S4L35AATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 20A 8-Pin TDSON EP T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
IPG20N10S4L35AATMA1INFINEONDescription: INFINEON - IPG20N10S4L35AATMA1 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 20 A, 20 A, 0.029 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 20A
Dauer-Drainstrom Id, p-Kanal: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 100V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 20A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.029ohm
Verlustleistung, p-Kanal: 43W
euEccn: NLR
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: Produktreihe OptiMOS T2
Drain-Source-Durchgangswiderstand, n-Kanal: 0.029ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 43W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N10S4L35ATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N10S4L35ATMA1INFINEONDescription: INFINEON - IPG20N10S4L35ATMA1 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 20 A, 20 A, 0.029 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 100V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 20A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.029ohm
Verlustleistung, p-Kanal: 43W
Drain-Source-Spannung Vds, n-Kanal: 100V
euEccn: NLR
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS T2 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.029ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 43W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 12273 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N10S4L35ATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+1.2 EUR
Mindestbestellmenge: 5000
IPG20N10S4L35ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.5 EUR
10000+ 1.43 EUR
Mindestbestellmenge: 5000
IPG20N10S4L35ATMA1Infineon TechnologiesMOSFET MOSFET
auf Bestellung 31260 Stücke:
Lieferzeit 14-28 Tag (e)
15+3.67 EUR
19+ 2.78 EUR
100+ 2.3 EUR
500+ 2.03 EUR
1000+ 1.58 EUR
5000+ 1.51 EUR
Mindestbestellmenge: 15
IPG20N10S4L35ATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N10S4L35ATMA1Infineon TechnologiesTrans MOSFET N-CH 100V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
IPG20N10S4L35ATMA1INFINEONDescription: INFINEON - IPG20N10S4L35ATMA1 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 20 A, 20 A, 0.029 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 100V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 20A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.029ohm
Verlustleistung, p-Kanal: 43W
Drain-Source-Spannung Vds, n-Kanal: 100V
euEccn: NLR
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS T2 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.029ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 43W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 8114 Stücke:
Lieferzeit 14-21 Tag (e)
IPG20N10S4L35ATMA1INFINEON TECHNOLOGIESCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
IPG20N10S4L35ATMA1Infineon TechnologiesDescription: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 37269 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.8 EUR
10+ 3.11 EUR
100+ 2.42 EUR
500+ 2.05 EUR
1000+ 1.67 EUR
2000+ 1.57 EUR
Mindestbestellmenge: 7
IPG20N10S4L35ATMA1INFINEON TECHNOLOGIESCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPG6-27390-1Sensata Technologies/AirpaxDescription: CIRCUIT BREAKER MAG-HYDR LEVER
Produkt ist nicht verfügbar
IPGH11-20845-2-VSensata-AirpaxDescription: CIRCUIT BREAKER MAG-HYDR LEVER
Packaging: Bulk
Mounting Type: Panel Mount
Actuator Type: Lever
Breaker Type: Magnetic (Hydraulic Delay)
Part Status: Active
Number of Poles: 2
Produkt ist nicht verfügbar
IPGH11-28676-25-VSensata-AirpaxDescription: CIRCUIT BREAKER MAG-HYDR LEVER
Packaging: Bulk
Mounting Type: Panel Mount
Actuator Type: Lever
Breaker Type: Magnetic (Hydraulic Delay)
Part Status: Active
Number of Poles: 2
Produkt ist nicht verfügbar
IPGH11-30036-1-VSensata-AirpaxDescription: CIRCUIT BREAKER MAG-HYDR LEVER
Packaging: Bulk
Mounting Type: Panel Mount
Actuator Type: Lever
Breaker Type: Magnetic (Hydraulic Delay)
Number of Poles: 2
Produkt ist nicht verfügbar
IPGH11-30036-7Sensata-AirpaxDescription: CIR BRKR MAG-HYDR LEVER
Packaging: Bulk
Mounting Type: Panel Mount
Actuator Type: Lever
Breaker Type: Magnetic (Hydraulic Delay)
Part Status: Active
Number of Poles: 2
Produkt ist nicht verfügbar
IPGH111-25450-1-VSensata-AirpaxDescription: CIRCUIT BREAKER MAG-HYDR LEVER
Produkt ist nicht verfügbar
IPGH1111-23259-1-VSensata-AirpaxDescription: CIRCUIT BREAKER MAG-HYDR LEVER
Packaging: Bulk
Mounting Type: Panel Mount
Actuator Type: Lever
Breaker Type: Magnetic (Hydraulic Delay)
Part Status: Active
Number of Poles: 4
Produkt ist nicht verfügbar
IPGH1111-28676-2-VSensata-AirpaxDescription: CIRCUIT BREAKER MAG-HYDR LEVER
Packaging: Bulk
Mounting Type: Panel Mount
Actuator Type: Lever
Breaker Type: Magnetic (Hydraulic Delay)
Part Status: Active
Number of Poles: 4
Produkt ist nicht verfügbar
IPGH266-20628-2Sensata Technologies/AirpaxDescription: CIRCUIT BREAKER MAG-HYDR LEVER
Produkt ist nicht verfügbar
IPGH66-20788-1-VSensata Technologies/AirpaxDescription: CIRCUIT BREAKER MAG-HYDR LEVER
Produkt ist nicht verfügbar
IPGH66-20788-2-VSensata Technologies/AirpaxDescription: CIRCUIT BREAKER MAG-HYDR LEVER
Produkt ist nicht verfügbar
IPGH66-20788-3-VSensata Technologies/AirpaxDescription: CIRCUIT BREAKER MAG-HYDR LEVER
Produkt ist nicht verfügbar
IPGH666-1REC4-23578-1-VSensata-AirpaxDescription: CIRCUIT BREAKER MAG-HYDR LEVER
Packaging: Bulk
Mounting Type: Panel Mount
Actuator Type: Lever
Breaker Type: Magnetic (Hydraulic Delay)
Part Status: Active
Number of Poles: 3
Produkt ist nicht verfügbar
IPGHB111-22761-1Sensata-AirpaxDescription: CIRCUIT BREAKER MAG-HYDR LEVER
Packaging: Bulk
Mounting Type: Panel Mount
Actuator Type: Lever
Breaker Type: Magnetic (Hydraulic Delay)
Number of Poles: 3
Produkt ist nicht verfügbar
IPGHF666-32689-30Sensata-AirpaxDescription: CIRCUIT BREAKER MAG-HYDR LEVER
Produkt ist nicht verfügbar
IPGSK-1316Sure-SealDescription: GASKET CIRCULAR 13/16 10PK
Packaging: Box
Accessory Type: Gasket
Part Status: Active
auf Bestellung 88 Stücke:
Lieferzeit 21-28 Tag (e)
2+22.8 EUR
25+ 18.24 EUR
Mindestbestellmenge: 2