Produkte > NEXPERIA USA INC. > Alle Produkte des Herstellers NEXPERIA USA INC. (31490) > Seite 13 nach 525
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSP110,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 520MA SOT223Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Obsolete Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 6.25W (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 150mA, 5V Current - Continuous Drain (Id) @ 25°C: 520mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BSP122,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 200V 550MA SOT223Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V Part Status: Not For New Designs Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 750mA, 10V Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) FET Type: N-Channel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BSP126,135 | Nexperia USA Inc. |
Description: MOSFET N-CH 250V 375MA SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-223 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BSP126,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 250V 375MA SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-223 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V |
auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
BSP130,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 300V 350MA SOT223Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 250mA, 10V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BSP220,115 | Nexperia USA Inc. |
Description: MOSFET P-CH 200V 225MA SOT223Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2.8V @ 1mA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 225mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BSP230,135 | Nexperia USA Inc. |
Description: MOSFET P-CH 300V 210MA SOT223Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2.55V @ 1mA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 17Ohm @ 170mA, 10V Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BSP250,135 | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 3A SOT223Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2.8V @ 1mA Power Dissipation (Max): 1.65W (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BSP250,115 | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 3A SOT223Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2.8V @ 1mA Power Dissipation (Max): 1.65W (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
auf Bestellung 11000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
BSP33,115 | Nexperia USA Inc. |
Description: TRANS PNP 80V 1A SOT-223Power - Max: 1.3 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-223 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
BSP50,115 | Nexperia USA Inc. |
Description: TRANS NPN DARL 45V 1A SOT-223Power - Max: 1.25 W Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-223 Qualification: AEC-Q101 Grade: Automotive Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BSP51,115 | Nexperia USA Inc. |
Description: TRANS NPN DARL 60V 1A SOT-223Power - Max: 1.25 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-223 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BSP52,115 | Nexperia USA Inc. |
Description: TRANS NPN DARL 80V 1A SOT-223Qualification: AEC-Q101 Grade: Automotive Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Power - Max: 1.25 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-223 |
auf Bestellung 103000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
BSP61,115 | Nexperia USA Inc. |
Description: TRANS PNP DARL 60V 1A SOT-223Power - Max: 1.25 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-223 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BSP62,115 | Nexperia USA Inc. |
Description: TRANS PNP DARL 80V 1A SOT-223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SOT-223 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.25 W Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
BSR31,115 | Nexperia USA Inc. |
Description: TRANS PNP 60V 1A SOT-89Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.35 W Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
BSR33,115 | Nexperia USA Inc. |
Description: TRANS PNP 80V 1A SOT-89Qualification: AEC-Q100 Grade: Automotive Power - Max: 1.35 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-89 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
BSR41,115 | Nexperia USA Inc. |
Description: TRANS NPN 60V 1A SOT-89Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.35 W |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
BSS192,115 | Nexperia USA Inc. |
Description: MOSFET P-CH 240V 200MA SOT89Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V Drain to Source Voltage (Vdss): 240 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: SOT-89 Vgs(th) (Max) @ Id: 2.8V @ 1mA Power Dissipation (Max): 560mW (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BSS63,215 | Nexperia USA Inc. |
Description: TRANS PNP 100V 0.1A TO-236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 85MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
BSS64,215 | Nexperia USA Inc. |
Description: TRANS NPN 80V 0.1A TO-236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 15mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
BST50,115 | Nexperia USA Inc. |
Description: TRANS NPN DARL 45V 1A SOT89Qualification: AEC-Q101 Grade: Automotive Power - Max: 1.3 W Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: SOT-89 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
BST51,135 | Nexperia USA Inc. |
Description: TRANS NPN DARL 60V 1A SOT-89Power - Max: 1.3 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 1 A Part Status: Active Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: SOT-89 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Current - Collector Cutoff (Max): 50nA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
BST51,115 | Nexperia USA Inc. |
Description: TRANS NPN DARL 60V 1A SOT89Part Status: Active Supplier Device Package: SOT-89 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Power - Max: 1.3 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 1 A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
BST52,135 | Nexperia USA Inc. |
Description: TRANS NPN DARL 80V 1A SOT89 Qualification: AEC-Q101 Grade: Automotive Power - Max: 1.3 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-89 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
BST52,115 | Nexperia USA Inc. |
Description: TRANS NPN DARL 80V 1A SOT-89Power - Max: 1.3 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-89 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
BST61,115 | Nexperia USA Inc. |
Description: TRANS PNP DARL 60V 1A SOT-89Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.3 W Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BUK7215-55A,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 55A DPAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2107 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BUK7515-100A,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 75A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BUK7528-100A,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 47A TO220ABQualification: AEC-Q101 Grade: Automotive Rds On (Max) @ Id, Vgs: 28mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 166W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BUK7535-100A,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 41A TO220ABRds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 149W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BUK7604-40A,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 5730 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Qualification: AEC-Q101 Grade: Automotive Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BUK7608-55A,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A D2PAKQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4352 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 0 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 254W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BUK7618-55,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 57A D2PAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 57A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BUK7635-100A,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 41A D2PAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 149W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BUK9215-55A,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 55A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 25A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2916 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BUK9222-55A,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 48A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V Power Dissipation (Max): 103W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 55 V Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BUK9504-40A,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A TO220ABRds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 8260 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 300W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BUK9515-100A,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 75A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BUK9518-55A,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 61A TO220ABMounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BUK9520-100A,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 63A TO220ABVgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 6385 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-220AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BUK9604-40A,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A D2PAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 8260 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BUK9606-55A,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A D2PAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BUK9614-55A,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 73A D2PAKQualification: AEC-Q101 Grade: Automotive Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 149W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 3307 pF @ 25 V Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BUK9615-100A,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 75A D2PAK |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BUK9635-55A,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 34A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
BUK9840-55,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 5A SOT223Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Obsolete Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 5V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BUK9880-55,135 | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 7.5A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 5V Power Dissipation (Max): 8.3W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-223 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 55 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BZA408B,115 | Nexperia USA Inc. |
Description: TVS DIODE 5VWM 6TSOPPackaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 75pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 6-TSOP Bidirectional Channels: 4 Power - Peak Pulse: 20W Power Line Protection: No Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BZA420A,165 | Nexperia USA Inc. |
Description: TVS DIODE 20VWM 28VC 6TSOPPackaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 48pF @ 1MHz Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: 6-TSOP Unidirectional Channels: 4 Voltage - Clamping (Max) @ Ipp: 28V Power - Peak Pulse: 19.6W Power Line Protection: No Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BZA420A,135 | Nexperia USA Inc. |
Description: TVS DIODE 20VWM 28VC 6TSOPPower Line Protection: No Power - Peak Pulse: 19.6W Voltage - Clamping (Max) @ Ipp: 28V Unidirectional Channels: 4 Supplier Device Package: 6-TSOP Voltage - Reverse Standoff (Typ): 20V Capacitance @ Frequency: 48pF @ 1MHz Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BZA420A,115 | Nexperia USA Inc. |
Description: TVS DIODE 20VWM 28VC 6TSOPPackaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 48pF @ 1MHz Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: 6-TSOP Unidirectional Channels: 4 Voltage - Clamping (Max) @ Ipp: 28V Power - Peak Pulse: 19.6W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
BZA456A,115 | Nexperia USA Inc. |
Description: TVS DIODE 5.6VWM 8VC 6TSOPPart Status: Active Power Line Protection: No Power - Peak Pulse: 24W Voltage - Clamping (Max) @ Ipp: 8V Unidirectional Channels: 4 Supplier Device Package: 6-TSOP Voltage - Reverse Standoff (Typ): 5.6V Current - Peak Pulse (10/1000µs): 3A (8/20µs) Capacitance @ Frequency: 240pF @ 1MHz Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Tape & Reel (TR) Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
BZA462A,115 | Nexperia USA Inc. |
Description: TVS DIODE 6.2VWM 9VC 6TSOPPart Status: Active Power Line Protection: No Power - Peak Pulse: 24W Voltage - Clamping (Max) @ Ipp: 9V Unidirectional Channels: 4 Supplier Device Package: 6-TSOP Voltage - Reverse Standoff (Typ): 6.2V Current - Peak Pulse (10/1000µs): 2.66A (8/20µs) Capacitance @ Frequency: 200pF @ 1MHz Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
BZA856AVL,115 | Nexperia USA Inc. |
Description: TVS DIODE 5.6VWM 5TSSOPPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 17pF @ 1MHz Voltage - Reverse Standoff (Typ): 5.6V Supplier Device Package: 5-TSSOP Unidirectional Channels: 4 Power - Peak Pulse: 6W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BZA956A,115 | Nexperia USA Inc. |
Description: TVS DIODE 5.6VWM SOT665Part Status: Active Power Line Protection: No Power - Peak Pulse: 16W Unidirectional Channels: 4 Supplier Device Package: SOT-665 Voltage - Reverse Standoff (Typ): 5.6V Capacitance @ Frequency: 125pF @ 1MHz Applications: General Purpose Type: Zener Mounting Type: Surface Mount Package / Case: SOT-665 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BZA962AVL,115 | Nexperia USA Inc. |
Description: TVS DIODE 6.2VWM SOT665Part Status: Active Power Line Protection: No Power - Peak Pulse: 6W Unidirectional Channels: 4 Supplier Device Package: SOT-665 Voltage - Reverse Standoff (Typ): 6.2V Capacitance @ Frequency: 18pF @ 1MHz Applications: General Purpose Type: Zener Mounting Type: Surface Mount Package / Case: SOT-665 Packaging: Tape & Reel (TR) |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
BZB784-C10,115 | Nexperia USA Inc. |
Description: DIODE ZENER ARRAY 10V SOT323Current - Reverse Leakage @ Vr: 200 nA @ 7 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 180 mW Supplier Device Package: SOT-323 Impedance (Max) (Zzt): 20 Ohms Voltage - Zener (Nom) (Vz): 10 V Configuration: 1 Pair Common Anode Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Tolerance: ±5% |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BZB784-C11,115 | Nexperia USA Inc. |
Description: DIODE ZENER ARRAY 11V SOT323Current - Reverse Leakage @ Vr: 100 nA @ 8 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 180 mW Supplier Device Package: SOT-323 Impedance (Max) (Zzt): 20 Ohms Configuration: 1 Pair Common Anode Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Tolerance: ±5% Packaging: Tape & Reel (TR) Voltage - Zener (Nom) (Vz): 11 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
BZB784-C2V4,115 | Nexperia USA Inc. |
Description: DIODE ZENER ARRAY 2.4V SOT323Current - Reverse Leakage @ Vr: 50 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 180 mW Supplier Device Package: SOT-323 Impedance (Max) (Zzt): 100 Ohms Voltage - Zener (Nom) (Vz): 2.4 V Configuration: 1 Pair Common Anode Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BSP110,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 520MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 150mA, 5V
Current - Continuous Drain (Id) @ 25°C: 520mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 520MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 150mA, 5V
Current - Continuous Drain (Id) @ 25°C: 520mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSP122,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 200V 550MA SOT223
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 750mA, 10V
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
FET Type: N-Channel
Description: MOSFET N-CH 200V 550MA SOT223
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 750mA, 10V
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
FET Type: N-Channel
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSP126,135 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 250V 375MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Description: MOSFET N-CH 250V 375MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSP126,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 250V 375MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Description: MOSFET N-CH 250V 375MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.41 EUR |
| 2000+ | 0.37 EUR |
| 3000+ | 0.35 EUR |
| BSP130,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 300V 350MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 300V 350MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSP220,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 200V 225MA SOT223
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 225mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 200V 225MA SOT223
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 225mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSP230,135 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 300V 210MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.55V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 17Ohm @ 170mA, 10V
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 300V 210MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.55V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 17Ohm @ 170mA, 10V
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSP250,135 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 3A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 1.65W (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 3A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 1.65W (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSP250,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 3A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 1.65W (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 3A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 1.65W (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.56 EUR |
| 2000+ | 0.51 EUR |
| BSP33,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 80V 1A SOT-223
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-223
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Description: TRANS PNP 80V 1A SOT-223
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-223
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.38 EUR |
| BSP50,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TRANS NPN DARL 45V 1A SOT-223
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-223
Qualification: AEC-Q101
Grade: Automotive
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: TRANS NPN DARL 45V 1A SOT-223
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-223
Qualification: AEC-Q101
Grade: Automotive
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSP51,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TRANS NPN DARL 60V 1A SOT-223
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-223
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS NPN DARL 60V 1A SOT-223
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-223
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSP52,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TRANS NPN DARL 80V 1A SOT-223
Qualification: AEC-Q101
Grade: Automotive
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-223
Description: TRANS NPN DARL 80V 1A SOT-223
Qualification: AEC-Q101
Grade: Automotive
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-223
auf Bestellung 103000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.41 EUR |
| 2000+ | 0.37 EUR |
| 3000+ | 0.35 EUR |
| 5000+ | 0.33 EUR |
| 7000+ | 0.32 EUR |
| 10000+ | 0.3 EUR |
| BSP61,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TRANS PNP DARL 60V 1A SOT-223
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-223
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS PNP DARL 60V 1A SOT-223
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-223
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSP62,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TRANS PNP DARL 80V 1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP DARL 80V 1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSR31,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 60V 1A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.35 W
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 60V 1A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.35 W
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSR33,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 80V 1A SOT-89
Qualification: AEC-Q100
Grade: Automotive
Power - Max: 1.35 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: TRANS PNP 80V 1A SOT-89
Qualification: AEC-Q100
Grade: Automotive
Power - Max: 1.35 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSR41,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 60V 1A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.35 W
Description: TRANS NPN 60V 1A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.35 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.33 EUR |
| BSS192,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 240V 200MA SOT89
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-89
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 560mW (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 240V 200MA SOT89
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-89
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 560mW (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSS63,215 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 100V 0.1A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 85MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 100V 0.1A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 85MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.074 EUR |
| BSS64,215 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 80V 0.1A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 15mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 80V 0.1A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 15mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BST50,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TRANS NPN DARL 45V 1A SOT89
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-89
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: TRANS NPN DARL 45V 1A SOT89
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-89
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.42 EUR |
| BST51,135 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TRANS NPN DARL 60V 1A SOT-89
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SOT-89
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 50nA
Description: TRANS NPN DARL 60V 1A SOT-89
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SOT-89
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 50nA
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BST51,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TRANS NPN DARL 60V 1A SOT89
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Description: TRANS NPN DARL 60V 1A SOT89
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BST52,135 |
Hersteller: Nexperia USA Inc.
Description: TRANS NPN DARL 80V 1A SOT89
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: TRANS NPN DARL 80V 1A SOT89
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BST52,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TRANS NPN DARL 80V 1A SOT-89
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS NPN DARL 80V 1A SOT-89
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.47 EUR |
| 2000+ | 0.43 EUR |
| 3000+ | 0.4 EUR |
| BST61,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TRANS PNP DARL 60V 1A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP DARL 60V 1A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BUK7215-55A,118 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 55A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2107 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 55V 55A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2107 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7515-100A,127 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7528-100A,127 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 47A TO220AB
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 28mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 166W (Tc)
Description: MOSFET N-CH 100V 47A TO220AB
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 28mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 166W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7535-100A,127 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 41A TO220AB
Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 149W (Tc)
Description: MOSFET N-CH 100V 41A TO220AB
Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 149W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7604-40A,118 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7608-55A,118 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4352 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 0 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 254W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 55V 75A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4352 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 0 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 254W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7618-55,118 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 57A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 55V 57A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BUK7635-100A,118 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 41A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 149W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 41A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 149W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK9215-55A,118 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 25A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2916 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 25A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2916 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK9222-55A,118 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 48A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 48A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK9504-40A,127 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 300W (Tc)
Description: MOSFET N-CH 40V 75A TO220AB
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 300W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK9515-100A,127 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK9518-55A,127 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 61A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 55V 61A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK9520-100A,127 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 63A TO220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6385 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Description: MOSFET N-CH 100V 63A TO220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6385 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK9604-40A,118 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 8260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 75A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 8260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK9606-55A,118 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 55V 75A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK9614-55A,118 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 73A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 149W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 3307 pF @ 25 V
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 55V 73A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 149W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 3307 pF @ 25 V
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BUK9615-100A,118 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
Description: MOSFET N-CH 100V 75A D2PAK
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| BUK9635-55A,118 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 34A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 55V 34A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 0.89 EUR |
| 1600+ | 0.82 EUR |
| 2400+ | 0.78 EUR |
| 4000+ | 0.74 EUR |
| BUK9840-55,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 5A SOT223
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 55V 5A SOT223
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK9880-55,135 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 7.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 5V
Power Dissipation (Max): 8.3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 7.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 5V
Power Dissipation (Max): 8.3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZA408B,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-TSOP
Bidirectional Channels: 4
Power - Peak Pulse: 20W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q100
Description: TVS DIODE 5VWM 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-TSOP
Bidirectional Channels: 4
Power - Peak Pulse: 20W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZA420A,165 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 20VWM 28VC 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 48pF @ 1MHz
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 19.6W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q100
Description: TVS DIODE 20VWM 28VC 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 48pF @ 1MHz
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 19.6W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZA420A,135 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 20VWM 28VC 6TSOP
Power Line Protection: No
Power - Peak Pulse: 19.6W
Voltage - Clamping (Max) @ Ipp: 28V
Unidirectional Channels: 4
Supplier Device Package: 6-TSOP
Voltage - Reverse Standoff (Typ): 20V
Capacitance @ Frequency: 48pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Description: TVS DIODE 20VWM 28VC 6TSOP
Power Line Protection: No
Power - Peak Pulse: 19.6W
Voltage - Clamping (Max) @ Ipp: 28V
Unidirectional Channels: 4
Supplier Device Package: 6-TSOP
Voltage - Reverse Standoff (Typ): 20V
Capacitance @ Frequency: 48pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZA420A,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 20VWM 28VC 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 48pF @ 1MHz
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 19.6W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: TVS DIODE 20VWM 28VC 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 48pF @ 1MHz
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 19.6W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.14 EUR |
| 6000+ | 0.13 EUR |
| BZA456A,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.6VWM 8VC 6TSOP
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 24W
Voltage - Clamping (Max) @ Ipp: 8V
Unidirectional Channels: 4
Supplier Device Package: 6-TSOP
Voltage - Reverse Standoff (Typ): 5.6V
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 240pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Description: TVS DIODE 5.6VWM 8VC 6TSOP
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 24W
Voltage - Clamping (Max) @ Ipp: 8V
Unidirectional Channels: 4
Supplier Device Package: 6-TSOP
Voltage - Reverse Standoff (Typ): 5.6V
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 240pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.1 EUR |
| BZA462A,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 6.2VWM 9VC 6TSOP
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 24W
Voltage - Clamping (Max) @ Ipp: 9V
Unidirectional Channels: 4
Supplier Device Package: 6-TSOP
Voltage - Reverse Standoff (Typ): 6.2V
Current - Peak Pulse (10/1000µs): 2.66A (8/20µs)
Capacitance @ Frequency: 200pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Description: TVS DIODE 6.2VWM 9VC 6TSOP
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 24W
Voltage - Clamping (Max) @ Ipp: 9V
Unidirectional Channels: 4
Supplier Device Package: 6-TSOP
Voltage - Reverse Standoff (Typ): 6.2V
Current - Peak Pulse (10/1000µs): 2.66A (8/20µs)
Capacitance @ Frequency: 200pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.1 EUR |
| BZA856AVL,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.6VWM 5TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 17pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: 5-TSSOP
Unidirectional Channels: 4
Power - Peak Pulse: 6W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: TVS DIODE 5.6VWM 5TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 17pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: 5-TSSOP
Unidirectional Channels: 4
Power - Peak Pulse: 6W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZA956A,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.6VWM SOT665
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 16W
Unidirectional Channels: 4
Supplier Device Package: SOT-665
Voltage - Reverse Standoff (Typ): 5.6V
Capacitance @ Frequency: 125pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-665
Packaging: Tape & Reel (TR)
Description: TVS DIODE 5.6VWM SOT665
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 16W
Unidirectional Channels: 4
Supplier Device Package: SOT-665
Voltage - Reverse Standoff (Typ): 5.6V
Capacitance @ Frequency: 125pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-665
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZA962AVL,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 6.2VWM SOT665
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 6W
Unidirectional Channels: 4
Supplier Device Package: SOT-665
Voltage - Reverse Standoff (Typ): 6.2V
Capacitance @ Frequency: 18pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-665
Packaging: Tape & Reel (TR)
Description: TVS DIODE 6.2VWM SOT665
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 6W
Unidirectional Channels: 4
Supplier Device Package: SOT-665
Voltage - Reverse Standoff (Typ): 6.2V
Capacitance @ Frequency: 18pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-665
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.11 EUR |
| BZB784-C10,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER ARRAY 10V SOT323
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 180 mW
Supplier Device Package: SOT-323
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Description: DIODE ZENER ARRAY 10V SOT323
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 180 mW
Supplier Device Package: SOT-323
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZB784-C11,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER ARRAY 11V SOT323
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 180 mW
Supplier Device Package: SOT-323
Impedance (Max) (Zzt): 20 Ohms
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Voltage - Zener (Nom) (Vz): 11 V
Description: DIODE ZENER ARRAY 11V SOT323
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 180 mW
Supplier Device Package: SOT-323
Impedance (Max) (Zzt): 20 Ohms
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Voltage - Zener (Nom) (Vz): 11 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZB784-C2V4,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER ARRAY 2.4V SOT323
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 180 mW
Supplier Device Package: SOT-323
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.4 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER ARRAY 2.4V SOT323
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 180 mW
Supplier Device Package: SOT-323
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.4 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH

















