Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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2N6034G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; Darlington; 40V; 4A; 40W; TO225 Type of transistor: PNP Polarisation: bipolar Power dissipation: 40W Case: TO225 Mounting: THT Kind of package: bulk Kind of transistor: Darlington Collector-emitter voltage: 40V Collector current: 4A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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2N6043G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 60V; 8A; 75W; TO220AB Type of transistor: NPN Polarisation: bipolar Power dissipation: 75W Case: TO220AB Mounting: THT Kind of package: tube Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 8A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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2N6045G | ONSEMI |
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auf Bestellung 127 Stücke: Lieferzeit 7-14 Tag (e) |
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2N6284G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO3 Type of transistor: NPN Case: TO3 Collector-emitter voltage: 100V Current gain: 100...18000 Collector current: 20A Power dissipation: 160W Polarisation: bipolar Kind of package: in-tray Kind of transistor: Darlington Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 118 Stücke: Lieferzeit 7-14 Tag (e) |
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2N6387G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 60V; 10A; 2W; TO220AB Mounting: THT Case: TO220AB Collector-emitter voltage: 60V Collector current: 10A Type of transistor: NPN Power dissipation: 2W Polarisation: bipolar Kind of package: tube Kind of transistor: Darlington Anzahl je Verpackung: 1 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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2N6388G | ONSEMI |
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auf Bestellung 45 Stücke: Lieferzeit 7-14 Tag (e) |
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2N6487G | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
2N6488G | ONSEMI |
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auf Bestellung 838 Stücke: Lieferzeit 7-14 Tag (e) |
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2N6491G | ONSEMI |
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auf Bestellung 16 Stücke: Lieferzeit 7-14 Tag (e) |
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2N6517BU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: bulk Frequency: 40Hz...200MHz Collector-emitter voltage: 350V Current gain: 20...200 Collector current: 0.5A Anzahl je Verpackung: 20 Stücke |
auf Bestellung 5980 Stücke: Lieferzeit 7-14 Tag (e) |
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2N6517TA | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 40...200MHz Collector-emitter voltage: 350V Current gain: 30...200 Collector current: 0.5A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1703 Stücke: Lieferzeit 7-14 Tag (e) |
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2N6520TA | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Collector-emitter voltage: 350V Current gain: 30...200 Collector current: 0.5A Frequency: 40...200MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 767 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7000-D26Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2290 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7000-D74Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: Ammo Pack Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2N7000-D75Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 639 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7000 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: bulk Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5401 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7000BU | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.11A Pulsed drain current: 1A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: bulk Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2N7000TA | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.11A Pulsed drain current: 1A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: Ammo Pack Anzahl je Verpackung: 1 Stücke |
auf Bestellung 611 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 74974 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002DW | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.2W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® Pulsed drain current: 0.8A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4655 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002ET1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.2A; 0.42W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Pulsed drain current: 1.2A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 0.81nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2N7002ET7G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.81nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1.2A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 847 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002K | ONSEMI |
![]() ![]() ![]() ![]() Description: Transistor: N-MOSFET; unipolar; 60V; 270mA; Idm: 5A; 420mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.27A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Gate charge: 0.7nC Pulsed drain current: 5A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5603 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002KT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.38A; 0.42W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.38A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2800 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002KT7G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; Idm: 5A; 420mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.38A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 5A Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6990 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002KW | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.31A; Idm: 1.2A; 0.3W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.31A Pulsed drain current: 1.2A Power dissipation: 0.3W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 128 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002LT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2N7002LT3G | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
2N7002LT7G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; Idm: 0.8A; 225mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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2N7002T | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.073A Power dissipation: 0.2W Case: SOT523F Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2208 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002T | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.073A Power dissipation: 0.2W Case: SOT523F Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2208 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002V | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.28A; Idm: 1.5A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.28A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1.5A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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2N7002W | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.2W; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.2W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2N7002WT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.34A; 0.33W; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Power dissipation: 0.33W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 1.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.7nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 12485 Stücke: Lieferzeit 7-14 Tag (e) |
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2SA1417S-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 100V; 2A; 1.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 934 Stücke: Lieferzeit 7-14 Tag (e) |
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2SA1417T-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 100V; 2A; 1.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1.5W Case: SOT89 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2SA1418S-TD-E | ONSEMI |
![]() ![]() Description: Transistor: PNP; bipolar; 160V; 0.7A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.7A Power dissipation: 0.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 520 Stücke: Lieferzeit 7-14 Tag (e) |
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2SA1418T-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 160V; 0.7A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.7A Power dissipation: 0.5W Case: SOT89 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2SA1419S-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 160V; 1.5A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1.5A Power dissipation: 0.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
2SA1593T-TL-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 100V; 2A; 1W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1W Case: DPAK Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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2SA1774T1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.15W; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75; SOT416 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 381 Stücke: Lieferzeit 7-14 Tag (e) |
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2SA2012-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89 Mounting: SMD Type of transistor: PNP Power dissipation: 3.5W Polarisation: bipolar Kind of package: reel; tape Case: SOT89 Frequency: 350MHz Collector-emitter voltage: 30V Current gain: 200...560 Collector current: 5A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 242 Stücke: Lieferzeit 7-14 Tag (e) |
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2SA2013-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89 Mounting: SMD Type of transistor: PNP Power dissipation: 1.3W Polarisation: bipolar Kind of package: reel; tape Case: SOT89 Frequency: 360MHz Collector-emitter voltage: 50V Current gain: 200...560 Collector current: 4A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2SA2016-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 7A; 1.3W; SOT89 Mounting: SMD Type of transistor: PNP Power dissipation: 1.3W Polarisation: bipolar Kind of package: reel; tape Case: SOT89 Frequency: 290MHz Collector-emitter voltage: 50V Current gain: 200...560 Collector current: 7A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 790 Stücke: Lieferzeit 7-14 Tag (e) |
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2SA2040-TL-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK Mounting: SMD Type of transistor: PNP Power dissipation: 1W Polarisation: bipolar Kind of package: reel; tape Case: DPAK Frequency: 330MHz Collector-emitter voltage: 50V Current gain: 200...560 Collector current: 8A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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2SA2124-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 30V; 2A; 3.5W; SOT89 Mounting: SMD Type of transistor: PNP Power dissipation: 3.5W Polarisation: bipolar Kind of package: reel; tape Case: SOT89 Frequency: 440MHz Collector-emitter voltage: 30V Current gain: 65...560 Collector current: 2A Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
2SA2126-TL-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK Mounting: SMD Type of transistor: PNP Power dissipation: 0.8W Polarisation: bipolar Kind of package: reel; tape Case: DPAK Frequency: 390MHz Collector-emitter voltage: 50V Current gain: 200...560 Collector current: 3A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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2SA2126-TL-H | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; TO252 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 0.8W Case: TO252 Current gain: 200...560 Mounting: SMD Kind of package: reel; tape Frequency: 390MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 958 Stücke: Lieferzeit 7-14 Tag (e) |
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2SA2153-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89 Mounting: SMD Type of transistor: PNP Power dissipation: 1.3W Polarisation: bipolar Kind of package: reel; tape Case: SOT89 Frequency: 420MHz Collector-emitter voltage: 50V Current gain: 200...560 Collector current: 2A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2SA2202-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89 Mounting: SMD Type of transistor: PNP Power dissipation: 1.3W Polarisation: bipolar Kind of package: reel; tape Case: SOT89 Frequency: 300MHz Collector-emitter voltage: 100V Current gain: 200...400 Collector current: 2A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2SB1123S-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 0.5W Case: SOT89 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Current gain: 140...280 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2SB1123T-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 0.5W Case: SOT89 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Current gain: 200...400 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 733 Stücke: Lieferzeit 7-14 Tag (e) |
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2SB1202S-E | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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2SB815-7-TB-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59 Case: SC59 Kind of package: reel; tape Mounting: SMD Frequency: 250MHz Collector-emitter voltage: 15V Current gain: 300...600 Collector current: 0.7A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
2SC3646S-TD-E | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
2SC3646T-TD-E | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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2SC3647S-TD-E | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1.5W Case: SOT89 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz Current gain: 140...280 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 821 Stücke: Lieferzeit 7-14 Tag (e) |
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2SC3647T-TD-E | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
2SC3648S-TD-E | ONSEMI |
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auf Bestellung 2936 Stücke: Lieferzeit 7-14 Tag (e) |
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2SC3648T-TD-E | ONSEMI |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
2N6034G |
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Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 40V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 40W
Case: TO225
Mounting: THT
Kind of package: bulk
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 4A
Anzahl je Verpackung: 1 Stücke
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 40V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 40W
Case: TO225
Mounting: THT
Kind of package: bulk
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 4A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.15 EUR |
25+ | 2.86 EUR |
100+ | 0.72 EUR |
2N6043G |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 8A; 75W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 75W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 8A
Anzahl je Verpackung: 1 Stücke
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 8A; 75W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 75W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 2.97 EUR |
50+ | 1.43 EUR |
62+ | 1.16 EUR |
250+ | 0.68 EUR |
2N6045G |
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Hersteller: ONSEMI
2N6045G NPN THT Darlington transistors
2N6045G NPN THT Darlington transistors
auf Bestellung 127 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
58+ | 1.24 EUR |
103+ | 0.70 EUR |
109+ | 0.66 EUR |
1750+ | 0.63 EUR |
2N6284G |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO3
Type of transistor: NPN
Case: TO3
Collector-emitter voltage: 100V
Current gain: 100...18000
Collector current: 20A
Power dissipation: 160W
Polarisation: bipolar
Kind of package: in-tray
Kind of transistor: Darlington
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 20A; 160W; TO3
Type of transistor: NPN
Case: TO3
Collector-emitter voltage: 100V
Current gain: 100...18000
Collector current: 20A
Power dissipation: 160W
Polarisation: bipolar
Kind of package: in-tray
Kind of transistor: Darlington
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 118 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.89 EUR |
15+ | 4.99 EUR |
16+ | 4.72 EUR |
100+ | 4.66 EUR |
200+ | 4.55 EUR |
2N6387G |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 10A; 2W; TO220AB
Mounting: THT
Case: TO220AB
Collector-emitter voltage: 60V
Collector current: 10A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Anzahl je Verpackung: 1 Stücke
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 10A; 2W; TO220AB
Mounting: THT
Case: TO220AB
Collector-emitter voltage: 60V
Collector current: 10A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.58 EUR |
53+ | 1.34 EUR |
500+ | 0.80 EUR |
2N6388G |
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Hersteller: ONSEMI
2N6388G NPN THT Darlington transistors
2N6388G NPN THT Darlington transistors
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.59 EUR |
79+ | 0.90 EUR |
1000+ | 0.55 EUR |
2N6487G |
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Hersteller: ONSEMI
2N6487G NPN THT transistors
2N6487G NPN THT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N6488G |
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Hersteller: ONSEMI
2N6488G NPN THT transistors
2N6488G NPN THT transistors
auf Bestellung 838 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
60+ | 1.20 EUR |
104+ | 0.69 EUR |
110+ | 0.65 EUR |
1000+ | 0.63 EUR |
2N6491G | ![]() |
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Hersteller: ONSEMI
2N6491G PNP THT transistors
2N6491G PNP THT transistors
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.46 EUR |
24+ | 2.97 EUR |
65+ | 1.10 EUR |
1000+ | 0.65 EUR |
2N6517BU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 40Hz...200MHz
Collector-emitter voltage: 350V
Current gain: 20...200
Collector current: 0.5A
Anzahl je Verpackung: 20 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 40Hz...200MHz
Collector-emitter voltage: 350V
Current gain: 20...200
Collector current: 0.5A
Anzahl je Verpackung: 20 Stücke
auf Bestellung 5980 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
940+ | 0.08 EUR |
980+ | 0.07 EUR |
1040+ | 0.07 EUR |
2000+ | 0.07 EUR |
2N6517TA |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40...200MHz
Collector-emitter voltage: 350V
Current gain: 30...200
Collector current: 0.5A
Anzahl je Verpackung: 1 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40...200MHz
Collector-emitter voltage: 350V
Current gain: 30...200
Collector current: 0.5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1703 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
311+ | 0.23 EUR |
404+ | 0.18 EUR |
598+ | 0.12 EUR |
881+ | 0.08 EUR |
932+ | 0.08 EUR |
2N6520TA |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector-emitter voltage: 350V
Current gain: 30...200
Collector current: 0.5A
Frequency: 40...200MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector-emitter voltage: 350V
Current gain: 30...200
Collector current: 0.5A
Frequency: 40...200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 767 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
311+ | 0.23 EUR |
494+ | 0.14 EUR |
767+ | 0.09 EUR |
4000+ | 0.07 EUR |
2N7000-D26Z |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2290 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.50 EUR |
215+ | 0.33 EUR |
295+ | 0.24 EUR |
486+ | 0.15 EUR |
516+ | 0.14 EUR |
2000+ | 0.13 EUR |
2N7000-D74Z |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N7000-D75Z |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 639 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
180+ | 0.40 EUR |
230+ | 0.31 EUR |
334+ | 0.21 EUR |
481+ | 0.15 EUR |
511+ | 0.14 EUR |
2N7000 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5401 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
122+ | 0.59 EUR |
170+ | 0.42 EUR |
216+ | 0.33 EUR |
404+ | 0.18 EUR |
424+ | 0.17 EUR |
1000+ | 0.16 EUR |
2N7000BU |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Anzahl je Verpackung: 10000 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N7000TA |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
auf Bestellung 611 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
191+ | 0.37 EUR |
235+ | 0.30 EUR |
281+ | 0.25 EUR |
338+ | 0.21 EUR |
500+ | 0.14 EUR |
532+ | 0.13 EUR |
2N7002 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 74974 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
295+ | 0.24 EUR |
382+ | 0.19 EUR |
421+ | 0.17 EUR |
695+ | 0.10 EUR |
736+ | 0.10 EUR |
2N7002DW |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.2W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.2W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4655 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
283+ | 0.25 EUR |
368+ | 0.19 EUR |
414+ | 0.17 EUR |
506+ | 0.14 EUR |
532+ | 0.13 EUR |
2N7002ET1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 1.2A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 1.2A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N7002ET7G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 847 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
610+ | 0.12 EUR |
847+ | 0.08 EUR |
1659+ | 0.04 EUR |
2N7002K |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Gate charge: 0.7nC
Pulsed drain current: 5A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Gate charge: 0.7nC
Pulsed drain current: 5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5603 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
348+ | 0.21 EUR |
479+ | 0.15 EUR |
552+ | 0.13 EUR |
1025+ | 0.07 EUR |
1085+ | 0.07 EUR |
3000+ | 0.06 EUR |
2N7002KT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.38A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.38A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2800 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
550+ | 0.13 EUR |
582+ | 0.12 EUR |
765+ | 0.09 EUR |
857+ | 0.08 EUR |
1880+ | 0.04 EUR |
1993+ | 0.04 EUR |
2N7002KT7G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5A
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5A
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6990 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
1000+ | 0.07 EUR |
1462+ | 0.05 EUR |
1593+ | 0.05 EUR |
1916+ | 0.04 EUR |
2025+ | 0.04 EUR |
2N7002KW |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.31A; Idm: 1.2A; 0.3W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1.2A
Power dissipation: 0.3W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.31A; Idm: 1.2A; 0.3W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1.2A
Power dissipation: 0.3W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 128 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
128+ | 0.56 EUR |
190+ | 0.37 EUR |
520+ | 0.14 EUR |
3000+ | 0.08 EUR |
2N7002LT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N7002LT3G | ![]() |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N7002LT7G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; Idm: 0.8A; 225mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; Idm: 0.8A; 225mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N7002T |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Power dissipation: 0.2W
Case: SOT523F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Power dissipation: 0.2W
Case: SOT523F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2208 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
230+ | 0.31 EUR |
285+ | 0.25 EUR |
394+ | 0.18 EUR |
516+ | 0.14 EUR |
544+ | 0.13 EUR |
2N7002T |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Power dissipation: 0.2W
Case: SOT523F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Power dissipation: 0.2W
Case: SOT523F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2208 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
230+ | 0.31 EUR |
285+ | 0.25 EUR |
394+ | 0.18 EUR |
516+ | 0.14 EUR |
544+ | 0.13 EUR |
2N7002V |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.28A; Idm: 1.5A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.5A
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.28A; Idm: 1.5A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.5A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N7002W |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.2W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.2W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.2W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.2W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N7002WT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.34A; 0.33W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Power dissipation: 0.33W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 1.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.7nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.34A; 0.33W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Power dissipation: 0.33W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 1.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.7nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12485 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
685+ | 0.10 EUR |
1153+ | 0.06 EUR |
2174+ | 0.03 EUR |
2294+ | 0.03 EUR |
2SA1417S-TD-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 934 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
72+ | 1.00 EUR |
107+ | 0.67 EUR |
200+ | 0.36 EUR |
211+ | 0.34 EUR |
1000+ | 0.33 EUR |
2SA1417T-TD-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA1418S-TD-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 0.7A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.7A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 0.7A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.7A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 520 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
147+ | 0.49 EUR |
195+ | 0.37 EUR |
199+ | 0.36 EUR |
206+ | 0.35 EUR |
250+ | 0.33 EUR |
2SA1418T-TD-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 0.7A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.7A
Power dissipation: 0.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 0.7A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.7A
Power dissipation: 0.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA1419S-TD-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA1593T-TL-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: DPAK
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: DPAK
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA1774T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.15W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.15W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 381 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
381+ | 0.19 EUR |
500+ | 0.14 EUR |
562+ | 0.13 EUR |
1000+ | 0.07 EUR |
1544+ | 0.05 EUR |
2SA2012-TD-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 3.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 350MHz
Collector-emitter voltage: 30V
Current gain: 200...560
Collector current: 5A
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 3.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 350MHz
Collector-emitter voltage: 30V
Current gain: 200...560
Collector current: 5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 242 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
93+ | 0.77 EUR |
138+ | 0.52 EUR |
158+ | 0.45 EUR |
167+ | 0.43 EUR |
250+ | 0.41 EUR |
2SA2013-TD-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 360MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 4A
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 360MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 4A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
2SA2016-TD-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 7A; 1.3W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 290MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 7A
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 7A; 1.3W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 290MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 7A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 790 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.17 EUR |
87+ | 0.82 EUR |
122+ | 0.59 EUR |
129+ | 0.56 EUR |
500+ | 0.54 EUR |
2SA2040-TL-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Case: DPAK
Frequency: 330MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 8A
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Case: DPAK
Frequency: 330MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 8A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA2124-TD-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 3.5W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 3.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 440MHz
Collector-emitter voltage: 30V
Current gain: 65...560
Collector current: 2A
Anzahl je Verpackung: 5000 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 3.5W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 3.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 440MHz
Collector-emitter voltage: 30V
Current gain: 65...560
Collector current: 2A
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA2126-TL-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: reel; tape
Case: DPAK
Frequency: 390MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 3A
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: reel; tape
Case: DPAK
Frequency: 390MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 3A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA2126-TL-H |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.8W
Case: TO252
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 390MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.8W
Case: TO252
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 390MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 958 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
90+ | 0.80 EUR |
184+ | 0.39 EUR |
209+ | 0.34 EUR |
224+ | 0.32 EUR |
232+ | 0.31 EUR |
236+ | 0.30 EUR |
700+ | 0.29 EUR |
2SA2153-TD-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 420MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 2A
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 420MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 2A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA2202-TD-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 300MHz
Collector-emitter voltage: 100V
Current gain: 200...400
Collector current: 2A
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 300MHz
Collector-emitter voltage: 100V
Current gain: 200...400
Collector current: 2A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SB1123S-TD-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 140...280
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 140...280
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SB1123T-TD-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 200...400
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 200...400
Anzahl je Verpackung: 1 Stücke
auf Bestellung 733 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
81+ | 0.89 EUR |
126+ | 0.57 EUR |
256+ | 0.28 EUR |
269+ | 0.27 EUR |
2000+ | 0.25 EUR |
2SB1202S-E |
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Hersteller: ONSEMI
2SB1202S-E PNP THT transistors
2SB1202S-E PNP THT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SB815-7-TB-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59
Case: SC59
Kind of package: reel; tape
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 15V
Current gain: 300...600
Collector current: 0.7A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59
Case: SC59
Kind of package: reel; tape
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 15V
Current gain: 300...600
Collector current: 0.7A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SC3646S-TD-E |
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Hersteller: ONSEMI
2SC3646S-TD-E NPN SMD transistors
2SC3646S-TD-E NPN SMD transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SC3646T-TD-E |
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Hersteller: ONSEMI
2SC3646T-TD-E NPN SMD transistors
2SC3646T-TD-E NPN SMD transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SC3647S-TD-E |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.5W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Current gain: 140...280
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.5W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Current gain: 140...280
Anzahl je Verpackung: 1 Stücke
auf Bestellung 821 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
73+ | 0.99 EUR |
108+ | 0.66 EUR |
198+ | 0.36 EUR |
210+ | 0.34 EUR |
1000+ | 0.33 EUR |
2SC3647T-TD-E |
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Hersteller: ONSEMI
2SC3647T-TD-E NPN SMD transistors
2SC3647T-TD-E NPN SMD transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SC3648S-TD-E |
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Hersteller: ONSEMI
2SC3648S-TD-E NPN SMD transistors
2SC3648S-TD-E NPN SMD transistors
auf Bestellung 2936 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
134+ | 0.54 EUR |
232+ | 0.31 EUR |
246+ | 0.29 EUR |
1000+ | 0.28 EUR |
2SC3648T-TD-E |
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Hersteller: ONSEMI
2SC3648T-TD-E NPN SMD transistors
2SC3648T-TD-E NPN SMD transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH