| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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FDB15N50 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 11A; 300W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 300W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.33Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 767 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDB2532 | ONSEMI |
FDB2532 SMD N channel transistors |
auf Bestellung 608 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDB2572 | ONSEMI |
FDB2572 SMD N channel transistors |
auf Bestellung 726 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDB2710 | ONSEMI |
FDB2710 SMD N channel transistors |
auf Bestellung 784 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDB28N30TM | ONSEMI |
FDB28N30TM SMD N channel transistors |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDB33N25TM | ONSEMI |
FDB33N25TM SMD N channel transistors |
auf Bestellung 542 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDB3652 | ONSEMI |
FDB3652 SMD N channel transistors |
auf Bestellung 335 Stücke: Lieferzeit 7-14 Tag (e) |
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FDB44N25TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 26.4A; 307W; D2PAK Mounting: SMD Power dissipation: 307W Drain-source voltage: 250V Gate-source voltage: ±30V Case: D2PAK Kind of channel: enhancement Type of transistor: N-MOSFET Technology: UniFET™ Kind of package: reel; tape Polarisation: unipolar Gate charge: 61nC On-state resistance: 69mΩ Drain current: 26.4A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 760 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDB52N20TM | ONSEMI |
FDB52N20TM SMD N channel transistors |
auf Bestellung 294 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDB5800 | ONSEMI |
FDB5800 SMD N channel transistors |
auf Bestellung 689 Stücke: Lieferzeit 7-14 Tag (e) |
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FDC2612 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 1.1A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 200V Drain current: 1.1A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 1.43Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1649 Stücke: Lieferzeit 7-14 Tag (e) |
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FDC3601N | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 1A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 976mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2990 Stücke: Lieferzeit 7-14 Tag (e) |
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FDC3612 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.6A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2982 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDC5614P | ONSEMI |
FDC5614P SMD P channel transistors |
auf Bestellung 2312 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDC602P | ONSEMI |
FDC602P SMD P channel transistors |
auf Bestellung 2997 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDC604P | ONSEMI |
FDC604P SMD P channel transistors |
auf Bestellung 2708 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDC606P | ONSEMI |
FDC606P SMD P channel transistors |
auf Bestellung 2175 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDC608PZ | ONSEMI |
FDC608PZ SMD P channel transistors |
auf Bestellung 2473 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDC610PZ | ONSEMI |
FDC610PZ SMD P channel transistors |
auf Bestellung 462 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDC6301N | ONSEMI |
FDC6301N Multi channel transistors |
auf Bestellung 2605 Stücke: Lieferzeit 7-14 Tag (e) |
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FDC6303N | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 25V Drain current: 0.68A Power dissipation: 0.9W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 2.3nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2990 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDC6305N | ONSEMI |
FDC6305N Multi channel transistors |
auf Bestellung 277 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDC6312P | ONSEMI |
FDC6312P Multi channel transistors |
auf Bestellung 95 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDC6318P | ONSEMI |
FDC6318P Multi channel transistors |
auf Bestellung 2787 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDC6321C | ONSEMI |
FDC6321C Multi channel transistors |
auf Bestellung 1429 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDC6324L | ONSEMI |
FDC6324L Power switches - integrated circuits |
auf Bestellung 3011 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDC6327C | ONSEMI |
FDC6327C Multi channel transistors |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDC6330L | ONSEMI |
FDC6330L Power switches - integrated circuits |
auf Bestellung 2570 Stücke: Lieferzeit 7-14 Tag (e) |
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FDC6331L | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 2.8A; Ch: 1; P-Channel; SMD; SuperSOT-6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2.8A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SuperSOT-6 On-state resistance: 0.1Ω Kind of package: reel; tape Supply voltage: -8...8V DC Control voltage: -0.5...8V DC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1428 Stücke: Lieferzeit 7-14 Tag (e) |
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FDC6333C | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 2.5/-2A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±16/±25V On-state resistance: 150/220mΩ Mounting: SMD Gate charge: 6.6/5.7nC Kind of package: reel; tape Kind of channel: enhancement Kind of transistor: complementary pair Technology: PowerTrench® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1950 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDC637AN | ONSEMI |
FDC637AN SMD N channel transistors |
auf Bestellung 2258 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDC637BNZ | ONSEMI |
FDC637BNZ SMD N channel transistors |
auf Bestellung 1490 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDC638APZ | ONSEMI |
FDC638APZ SMD P channel transistors |
auf Bestellung 2995 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDC638P | ONSEMI |
FDC638P SMD P channel transistors |
auf Bestellung 269 Stücke: Lieferzeit 7-14 Tag (e) |
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FDC6401N | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 3A; 0.96W; SuperSOT-6 Case: SuperSOT-6 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET x2 Drain-source voltage: 20V Drain current: 3A Gate charge: 4.6nC On-state resistance: 106mΩ Power dissipation: 0.96W Gate-source voltage: ±12V Polarisation: unipolar Technology: PowerTrench® Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1426 Stücke: Lieferzeit 7-14 Tag (e) |
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FDC6420C | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 3/-2.2A Power dissipation: 0.9W Case: SuperSOT-6 Gate-source voltage: ±12V On-state resistance: 70/125mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Kind of transistor: complementary pair Technology: PowerTrench® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1558 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDC645N | ONSEMI |
FDC645N SMD N channel transistors |
auf Bestellung 1444 Stücke: Lieferzeit 7-14 Tag (e) |
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FDC653N | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1890 Stücke: Lieferzeit 7-14 Tag (e) |
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FDC655BN | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.3A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 260 Stücke: Lieferzeit 7-14 Tag (e) |
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FDC6561AN | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 152mΩ Mounting: SMD Gate charge: 3.2nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 857 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDC658AP | ONSEMI |
FDC658AP SMD P channel transistors |
auf Bestellung 1926 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDC658P | ONSEMI |
FDC658P SMD P channel transistors |
auf Bestellung 2629 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDD10AN06A0 | ONSEMI |
FDD10AN06A0 SMD N channel transistors |
auf Bestellung 1749 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDD120AN15A0 | ONSEMI |
FDD120AN15A0 SMD N channel transistors |
auf Bestellung 1460 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDD13AN06A0 | ONSEMI |
FDD13AN06A0 SMD N channel transistors |
auf Bestellung 2610 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDD16AN08A0 | ONSEMI |
FDD16AN08A0 SMD N channel transistors |
auf Bestellung 2002 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDD2572 | ONSEMI |
FDD2572 SMD N channel transistors |
auf Bestellung 2219 Stücke: Lieferzeit 7-14 Tag (e) |
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FDD306P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -12V; -6.7A; 52W; DPAK Case: DPAK Mounting: SMD Kind of channel: enhancement Technology: PowerTrench® Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -12V Drain current: -6.7A Gate charge: 21nC On-state resistance: 90mΩ Power dissipation: 52W Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 352 Stücke: Lieferzeit 7-14 Tag (e) |
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FDD3672 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 44A Power dissipation: 135W Case: DPAK Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1540 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDD3860 | ONSEMI |
FDD3860 SMD N channel transistors |
auf Bestellung 1757 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDD390N15A | ONSEMI |
FDD390N15A SMD N channel transistors |
auf Bestellung 2361 Stücke: Lieferzeit 7-14 Tag (e) |
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FDD4141 | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 69W; DPAK Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -40V Drain current: -10.8A Power dissipation: 69W Case: DPAK Gate-source voltage: ±20V On-state resistance: 18.7mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1942 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDD4243 | ONSEMI |
FDD4243 SMD P channel transistors |
auf Bestellung 1316 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDD4685 | ONSEMI |
FDD4685 SMD P channel transistors |
auf Bestellung 893 Stücke: Lieferzeit 7-14 Tag (e) |
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FDD5353 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 69W Case: DPAK Gate-source voltage: ±20V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1743 Stücke: Lieferzeit 7-14 Tag (e) |
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FDD5N60NZTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.4A Power dissipation: 83W Case: DPAK Gate-source voltage: ±25V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2411 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDD6637 | ONSEMI |
FDD6637 SMD P channel transistors |
auf Bestellung 2539 Stücke: Lieferzeit 7-14 Tag (e) |
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FDD770N15A | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 18A Power dissipation: 56.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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FDD7N20TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 3A; 43W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3A Power dissipation: 43W Case: DPAK Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2479 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDD8445 | ONSEMI |
FDD8445 SMD N channel transistors |
auf Bestellung 1584 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDB15N50 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 767 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.35 EUR |
| 22+ | 3.27 EUR |
| 25+ | 2.95 EUR |
| FDB2532 |
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Hersteller: ONSEMI
FDB2532 SMD N channel transistors
FDB2532 SMD N channel transistors
auf Bestellung 608 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.36 EUR |
| 22+ | 3.36 EUR |
| 23+ | 3.17 EUR |
| 50+ | 3.06 EUR |
| FDB2572 |
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Hersteller: ONSEMI
FDB2572 SMD N channel transistors
FDB2572 SMD N channel transistors
auf Bestellung 726 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.35 EUR |
| 43+ | 1.69 EUR |
| 45+ | 1.6 EUR |
| 500+ | 1.54 EUR |
| FDB2710 |
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Hersteller: ONSEMI
FDB2710 SMD N channel transistors
FDB2710 SMD N channel transistors
auf Bestellung 784 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.86 EUR |
| 18+ | 4.05 EUR |
| 19+ | 3.83 EUR |
| FDB28N30TM |
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Hersteller: ONSEMI
FDB28N30TM SMD N channel transistors
FDB28N30TM SMD N channel transistors
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.1 EUR |
| 29+ | 2.46 EUR |
| 100+ | 1.5 EUR |
| FDB33N25TM |
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Hersteller: ONSEMI
FDB33N25TM SMD N channel transistors
FDB33N25TM SMD N channel transistors
auf Bestellung 542 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.1 EUR |
| 41+ | 1.77 EUR |
| 43+ | 1.67 EUR |
| 500+ | 1.62 EUR |
| FDB3652 |
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Hersteller: ONSEMI
FDB3652 SMD N channel transistors
FDB3652 SMD N channel transistors
auf Bestellung 335 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.42 EUR |
| 41+ | 1.76 EUR |
| 44+ | 1.66 EUR |
| FDB44N25TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 26.4A; 307W; D2PAK
Mounting: SMD
Power dissipation: 307W
Drain-source voltage: 250V
Gate-source voltage: ±30V
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: UniFET™
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 61nC
On-state resistance: 69mΩ
Drain current: 26.4A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 26.4A; 307W; D2PAK
Mounting: SMD
Power dissipation: 307W
Drain-source voltage: 250V
Gate-source voltage: ±30V
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: UniFET™
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 61nC
On-state resistance: 69mΩ
Drain current: 26.4A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 760 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.1 EUR |
| 25+ | 2.87 EUR |
| 31+ | 2.32 EUR |
| 35+ | 2.09 EUR |
| 100+ | 1.82 EUR |
| FDB52N20TM |
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Hersteller: ONSEMI
FDB52N20TM SMD N channel transistors
FDB52N20TM SMD N channel transistors
auf Bestellung 294 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.87 EUR |
| 36+ | 2 EUR |
| 38+ | 1.9 EUR |
| FDB5800 |
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Hersteller: ONSEMI
FDB5800 SMD N channel transistors
FDB5800 SMD N channel transistors
auf Bestellung 689 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.43 EUR |
| 27+ | 2.67 EUR |
| 29+ | 2.53 EUR |
| FDC2612 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 1.1A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1.1A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 1.43Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 1.1A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1.1A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 1.43Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1649 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 106+ | 0.68 EUR |
| 152+ | 0.47 EUR |
| 500+ | 0.41 EUR |
| FDC3601N |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 976mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 976mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2990 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 88+ | 0.82 EUR |
| 118+ | 0.61 EUR |
| 177+ | 0.4 EUR |
| 250+ | 0.34 EUR |
| 500+ | 0.32 EUR |
| FDC3612 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2982 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 143+ | 0.5 EUR |
| 172+ | 0.42 EUR |
| 189+ | 0.38 EUR |
| 250+ | 0.34 EUR |
| FDC5614P |
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Hersteller: ONSEMI
FDC5614P SMD P channel transistors
FDC5614P SMD P channel transistors
auf Bestellung 2312 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 76+ | 0.94 EUR |
| 248+ | 0.29 EUR |
| 262+ | 0.27 EUR |
| FDC602P |
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Hersteller: ONSEMI
FDC602P SMD P channel transistors
FDC602P SMD P channel transistors
auf Bestellung 2997 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 76+ | 0.95 EUR |
| 192+ | 0.37 EUR |
| 203+ | 0.35 EUR |
| FDC604P |
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Hersteller: ONSEMI
FDC604P SMD P channel transistors
FDC604P SMD P channel transistors
auf Bestellung 2708 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 234+ | 0.31 EUR |
| 247+ | 0.29 EUR |
| 3000+ | 0.28 EUR |
| FDC606P |
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Hersteller: ONSEMI
FDC606P SMD P channel transistors
FDC606P SMD P channel transistors
auf Bestellung 2175 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.18 EUR |
| 117+ | 0.61 EUR |
| 124+ | 0.58 EUR |
| FDC608PZ |
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Hersteller: ONSEMI
FDC608PZ SMD P channel transistors
FDC608PZ SMD P channel transistors
auf Bestellung 2473 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 111+ | 0.65 EUR |
| 234+ | 0.31 EUR |
| 247+ | 0.29 EUR |
| 3000+ | 0.28 EUR |
| FDC610PZ |
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Hersteller: ONSEMI
FDC610PZ SMD P channel transistors
FDC610PZ SMD P channel transistors
auf Bestellung 462 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 96+ | 0.75 EUR |
| 237+ | 0.3 EUR |
| 252+ | 0.28 EUR |
| 9000+ | 0.27 EUR |
| FDC6301N |
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Hersteller: ONSEMI
FDC6301N Multi channel transistors
FDC6301N Multi channel transistors
auf Bestellung 2605 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 417+ | 0.17 EUR |
| 443+ | 0.16 EUR |
| FDC6303N |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2990 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 97+ | 0.74 EUR |
| 133+ | 0.54 EUR |
| 198+ | 0.36 EUR |
| 235+ | 0.3 EUR |
| 291+ | 0.25 EUR |
| 500+ | 0.22 EUR |
| FDC6305N |
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Hersteller: ONSEMI
FDC6305N Multi channel transistors
FDC6305N Multi channel transistors
auf Bestellung 277 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 0.88 EUR |
| 205+ | 0.35 EUR |
| 217+ | 0.33 EUR |
| FDC6312P |
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Hersteller: ONSEMI
FDC6312P Multi channel transistors
FDC6312P Multi channel transistors
auf Bestellung 95 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 64+ | 1.13 EUR |
| 95+ | 0.76 EUR |
| 107+ | 0.67 EUR |
| 3000+ | 0.43 EUR |
| FDC6318P |
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Hersteller: ONSEMI
FDC6318P Multi channel transistors
FDC6318P Multi channel transistors
auf Bestellung 2787 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 1.28 EUR |
| 126+ | 0.57 EUR |
| 134+ | 0.54 EUR |
| FDC6321C |
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Hersteller: ONSEMI
FDC6321C Multi channel transistors
FDC6321C Multi channel transistors
auf Bestellung 1429 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 93+ | 0.78 EUR |
| 195+ | 0.37 EUR |
| 206+ | 0.35 EUR |
| 1000+ | 0.33 EUR |
| FDC6324L |
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Hersteller: ONSEMI
FDC6324L Power switches - integrated circuits
FDC6324L Power switches - integrated circuits
auf Bestellung 3011 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 74+ | 0.98 EUR |
| 126+ | 0.57 EUR |
| 168+ | 0.43 EUR |
| 178+ | 0.4 EUR |
| FDC6327C |
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Hersteller: ONSEMI
FDC6327C Multi channel transistors
FDC6327C Multi channel transistors
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 35.75 EUR |
| 59+ | 1.22 EUR |
| 162+ | 0.44 EUR |
| 9000+ | 0.36 EUR |
| FDC6330L |
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Hersteller: ONSEMI
FDC6330L Power switches - integrated circuits
FDC6330L Power switches - integrated circuits
auf Bestellung 2570 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 166+ | 0.43 EUR |
| 175+ | 0.41 EUR |
| FDC6331L |
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Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.8A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SuperSOT-6
On-state resistance: 0.1Ω
Kind of package: reel; tape
Supply voltage: -8...8V DC
Control voltage: -0.5...8V DC
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.8A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SuperSOT-6
On-state resistance: 0.1Ω
Kind of package: reel; tape
Supply voltage: -8...8V DC
Control voltage: -0.5...8V DC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1428 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 116+ | 0.62 EUR |
| 128+ | 0.56 EUR |
| 136+ | 0.53 EUR |
| FDC6333C |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±16/±25V
On-state resistance: 150/220mΩ
Mounting: SMD
Gate charge: 6.6/5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Technology: PowerTrench®
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±16/±25V
On-state resistance: 150/220mΩ
Mounting: SMD
Gate charge: 6.6/5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Technology: PowerTrench®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1950 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 0.87 EUR |
| 90+ | 0.8 EUR |
| 115+ | 0.63 EUR |
| 138+ | 0.52 EUR |
| 500+ | 0.32 EUR |
| 750+ | 0.29 EUR |
| 1000+ | 0.27 EUR |
| FDC637AN |
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Hersteller: ONSEMI
FDC637AN SMD N channel transistors
FDC637AN SMD N channel transistors
auf Bestellung 2258 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 1.28 EUR |
| 141+ | 0.51 EUR |
| 149+ | 0.48 EUR |
| FDC637BNZ |
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Hersteller: ONSEMI
FDC637BNZ SMD N channel transistors
FDC637BNZ SMD N channel transistors
auf Bestellung 1490 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 166+ | 0.43 EUR |
| 496+ | 0.14 EUR |
| FDC638APZ |
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Hersteller: ONSEMI
FDC638APZ SMD P channel transistors
FDC638APZ SMD P channel transistors
auf Bestellung 2995 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.85 EUR |
| 286+ | 0.25 EUR |
| 304+ | 0.24 EUR |
| 9000+ | 0.23 EUR |
| FDC638P |
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Hersteller: ONSEMI
FDC638P SMD P channel transistors
FDC638P SMD P channel transistors
auf Bestellung 269 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 99+ | 0.73 EUR |
| 216+ | 0.33 EUR |
| 228+ | 0.31 EUR |
| 6000+ | 0.3 EUR |
| FDC6401N |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Drain-source voltage: 20V
Drain current: 3A
Gate charge: 4.6nC
On-state resistance: 106mΩ
Power dissipation: 0.96W
Gate-source voltage: ±12V
Polarisation: unipolar
Technology: PowerTrench®
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Drain-source voltage: 20V
Drain current: 3A
Gate charge: 4.6nC
On-state resistance: 106mΩ
Power dissipation: 0.96W
Gate-source voltage: ±12V
Polarisation: unipolar
Technology: PowerTrench®
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1426 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 84+ | 0.86 EUR |
| 100+ | 0.72 EUR |
| 118+ | 0.61 EUR |
| 136+ | 0.53 EUR |
| 158+ | 0.45 EUR |
| 500+ | 0.39 EUR |
| FDC6420C |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 3/-2.2A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 70/125mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Technology: PowerTrench®
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 3/-2.2A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 70/125mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Technology: PowerTrench®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1558 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 68+ | 1.06 EUR |
| 104+ | 0.69 EUR |
| 133+ | 0.54 EUR |
| 161+ | 0.45 EUR |
| 191+ | 0.37 EUR |
| 500+ | 0.35 EUR |
| FDC645N |
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Hersteller: ONSEMI
FDC645N SMD N channel transistors
FDC645N SMD N channel transistors
auf Bestellung 1444 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.05 EUR |
| 175+ | 0.41 EUR |
| 186+ | 0.39 EUR |
| 3000+ | 0.37 EUR |
| FDC653N |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1890 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 153+ | 0.47 EUR |
| 163+ | 0.44 EUR |
| 500+ | 0.42 EUR |
| FDC655BN |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 260 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| 146+ | 0.49 EUR |
| 200+ | 0.36 EUR |
| 231+ | 0.31 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.21 EUR |
| 3000+ | 0.2 EUR |
| FDC6561AN |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 152mΩ
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 152mΩ
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 857 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 1 EUR |
| 100+ | 0.72 EUR |
| 145+ | 0.49 EUR |
| 169+ | 0.42 EUR |
| 250+ | 0.35 EUR |
| 500+ | 0.31 EUR |
| FDC658AP |
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Hersteller: ONSEMI
FDC658AP SMD P channel transistors
FDC658AP SMD P channel transistors
auf Bestellung 1926 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 79+ | 0.91 EUR |
| 232+ | 0.31 EUR |
| 246+ | 0.29 EUR |
| FDC658P |
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Hersteller: ONSEMI
FDC658P SMD P channel transistors
FDC658P SMD P channel transistors
auf Bestellung 2629 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 1.15 EUR |
| 155+ | 0.46 EUR |
| 164+ | 0.44 EUR |
| 3000+ | 0.42 EUR |
| FDD10AN06A0 |
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Hersteller: ONSEMI
FDD10AN06A0 SMD N channel transistors
FDD10AN06A0 SMD N channel transistors
auf Bestellung 1749 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.16 EUR |
| 43+ | 1.69 EUR |
| 46+ | 1.59 EUR |
| 2500+ | 1.53 EUR |
| FDD120AN15A0 |
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Hersteller: ONSEMI
FDD120AN15A0 SMD N channel transistors
FDD120AN15A0 SMD N channel transistors
auf Bestellung 1460 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.49 EUR |
| 114+ | 0.63 EUR |
| 121+ | 0.59 EUR |
| FDD13AN06A0 |
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Hersteller: ONSEMI
FDD13AN06A0 SMD N channel transistors
FDD13AN06A0 SMD N channel transistors
auf Bestellung 2610 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.42 EUR |
| 48+ | 1.52 EUR |
| 50+ | 1.43 EUR |
| 250+ | 1.37 EUR |
| FDD16AN08A0 |
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Hersteller: ONSEMI
FDD16AN08A0 SMD N channel transistors
FDD16AN08A0 SMD N channel transistors
auf Bestellung 2002 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.55 EUR |
| 52+ | 1.39 EUR |
| 55+ | 1.32 EUR |
| FDD2572 |
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Hersteller: ONSEMI
FDD2572 SMD N channel transistors
FDD2572 SMD N channel transistors
auf Bestellung 2219 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.53 EUR |
| 44+ | 1.64 EUR |
| 46+ | 1.56 EUR |
| 250+ | 1.52 EUR |
| FDD306P |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.7A; 52W; DPAK
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.7A
Gate charge: 21nC
On-state resistance: 90mΩ
Power dissipation: 52W
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.7A; 52W; DPAK
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.7A
Gate charge: 21nC
On-state resistance: 90mΩ
Power dissipation: 52W
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 352 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 79+ | 0.91 EUR |
| 98+ | 0.74 EUR |
| 108+ | 0.67 EUR |
| 250+ | 0.66 EUR |
| FDD3672 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1540 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.04 EUR |
| 45+ | 1.62 EUR |
| 52+ | 1.4 EUR |
| 58+ | 1.24 EUR |
| 100+ | 1.19 EUR |
| FDD3860 |
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Hersteller: ONSEMI
FDD3860 SMD N channel transistors
FDD3860 SMD N channel transistors
auf Bestellung 1757 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.32 EUR |
| 80+ | 0.9 EUR |
| 84+ | 0.86 EUR |
| 500+ | 0.84 EUR |
| FDD390N15A |
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Hersteller: ONSEMI
FDD390N15A SMD N channel transistors
FDD390N15A SMD N channel transistors
auf Bestellung 2361 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.36 EUR |
| 91+ | 0.79 EUR |
| 97+ | 0.74 EUR |
| FDD4141 |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 69W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.8A
Power dissipation: 69W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 69W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.8A
Power dissipation: 69W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1942 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 58+ | 1.24 EUR |
| 72+ | 1 EUR |
| 83+ | 0.86 EUR |
| 103+ | 0.7 EUR |
| 128+ | 0.56 EUR |
| FDD4243 |
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Hersteller: ONSEMI
FDD4243 SMD P channel transistors
FDD4243 SMD P channel transistors
auf Bestellung 1316 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 62+ | 1.16 EUR |
| 126+ | 0.57 EUR |
| 133+ | 0.54 EUR |
| 250+ | 0.53 EUR |
| FDD4685 |
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Hersteller: ONSEMI
FDD4685 SMD P channel transistors
FDD4685 SMD P channel transistors
auf Bestellung 893 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.44 EUR |
| 73+ | 0.99 EUR |
| 77+ | 0.93 EUR |
| FDD5353 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 69W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 69W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1743 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.83 EUR |
| 44+ | 1.63 EUR |
| 49+ | 1.49 EUR |
| 56+ | 1.29 EUR |
| 64+ | 1.13 EUR |
| 100+ | 1 EUR |
| FDD5N60NZTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2411 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.3 EUR |
| 63+ | 1.15 EUR |
| 68+ | 1.05 EUR |
| 78+ | 0.92 EUR |
| 100+ | 0.75 EUR |
| 250+ | 0.72 EUR |
| FDD6637 |
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Hersteller: ONSEMI
FDD6637 SMD P channel transistors
FDD6637 SMD P channel transistors
auf Bestellung 2539 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.12 EUR |
| 61+ | 1.19 EUR |
| 65+ | 1.12 EUR |
| FDD770N15A |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 10+ | 7.15 EUR |
| 25+ | 2.86 EUR |
| 100+ | 0.74 EUR |
| FDD7N20TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; 43W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; 43W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2479 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 88+ | 0.82 EUR |
| 120+ | 0.6 EUR |
| 136+ | 0.53 EUR |
| 500+ | 0.46 EUR |
| FDD8445 |
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Hersteller: ONSEMI
FDD8445 SMD N channel transistors
FDD8445 SMD N channel transistors
auf Bestellung 1584 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 76+ | 0.95 EUR |
| 80+ | 0.9 EUR |
| 100+ | 0.87 EUR |










