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SGW50N60HS SGW50N60HS
Produktcode: 73803
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Infineon Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247-3
Kollektor-Emitter-Spannung Vces, V: 600 В
Sättigungsspannung Vce, V: 2,8 В
Kollektorstrom Ic bei 25°C, A: 100 А
Kollektorstrom Ic bei 100°C, A: 50 А
auf Bestellung: 10 St.
  • 10 St. - Lieferzeit 21-28 Tag (e)
1+12.53 EUR
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SGW50N60HS SGW50N60HS
Produktcode: 217211
zu Favoriten hinzufügen Lieblingsprodukt
China Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247-3
Kollektor-Emitter-Spannung Vces, V: 600 В
Sättigungsspannung Vce, V: 2,8 В
Kollektorstrom Ic bei 25°C, A: 100 А
Kollektorstrom Ic bei 100°C, A: 50 А
auf Bestellung: 7 St.
  • 7 St. - Lieferzeit 21-28 Tag (e)
1+9.4 EUR
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AIKW50N60CTXKSA1 AIKW50N60CTXKSA1 Infineon Technologies Infineon_AIKW50N60CT_DS_v02_01_EN.pdf IGBTs DISCRETES
auf Bestellung 127 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.53 EUR
10+12.4 EUR
100+11.1 EUR
480+9.97 EUR
1200+9.42 EUR
2640+9.4 EUR
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AIKW50N60CTXKSA1 AIKW50N60CTXKSA1 Infineon Technologies Infineon-AIKW50N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382c6127ca1 Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 1.2mJ (on), 1.4mJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 353 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.54 EUR
10+12.05 EUR
30+11.03 EUR
120+10.12 EUR
270+9.72 EUR
Mindestbestellmenge: 2 Stücke
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FDBL0150N60 Fairchild Semiconductor fdbl0150n60-d.pdf Description: FDBL0150N60 - N-CHANNEL POWERTRE
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
auf Bestellung 2380 Stücke:
Lieferzeit 10-14 Tag (e)
59+9.38 EUR
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FDBL0150N60 FDBL0150N60 onsemi FDBL0150N60-D.pdf Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
auf Bestellung 1098 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.93 EUR
10+12.28 EUR
100+9.17 EUR
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FDBL0150N60 FDBL0150N60 onsemi FDBL0150N60-D.pdf fdbl0150n60-d.pdf MOSFETs Update code D
auf Bestellung 840 Stücke:
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10+12.26 EUR
100+10.09 EUR
500+9.01 EUR
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IGB50N60T IGB50N60T Infineon Technologies Infineon_IGB50N60T_DS_v02_07_EN.pdf IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 133 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.25 EUR
10+6.72 EUR
100+4.94 EUR
500+4.4 EUR
1000+3.89 EUR
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IGB50N60TATMA1 IGB50N60TATMA1 Infineon Technologies IGB50N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42812613d55 Description: IGBT TRENCH 600V 100A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 2337 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.97 EUR
10+6.62 EUR
100+4.72 EUR
500+4.25 EUR
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IGB50N60TATMA1 IGB50N60TATMA1 Infineon Technologies Infineon_IGB50N60T_DS_v02_07_EN.pdf IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.78 EUR
10+6.5 EUR
100+4.65 EUR
500+4.19 EUR
1000+3.94 EUR
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IGB50N60TATMA1 IGB50N60TATMA1 Infineon Technologies IGB50N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42812613d55 Description: IGBT TRENCH 600V 100A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.65 EUR
2000+3.47 EUR
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IGW50N60H3FKSA1 IGW50N60H3FKSA1 INFINEON TECHNOLOGIES IGW50N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Manufacturer series: H3
Collector-emitter voltage: 600V
Pulsed collector current: 200A
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
20+4.28 EUR
22+3.92 EUR
24+3.69 EUR
30+3.3 EUR
120+2.89 EUR
150+2.84 EUR
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IGW50N60H3FKSA1 IGW50N60H3FKSA1 Infineon info-tigw50n60h3.pdf IGBT 600V 100A 333W IGW50N60H3FKSA1 IGW50N60H3 TIGW50n60h3
Anzahl je Verpackung: 2 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
2+17.83 EUR
Mindestbestellmenge: 2 Stücke
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IGW50N60H3FKSA1 IGW50N60H3FKSA1 Infineon Technologies IGW50N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043266237920126bc64524041af Description: IGBT TRENCH FS 600V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/235ns
Switching Energy: 2.36mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 333 W
auf Bestellung 1 Stücke:
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IGW50N60T IGW50N60T Infineon Technologies Infineon_IGW50N60T_DataSheet_v02_08_EN.pdf IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.46 EUR
10+5.55 EUR
100+4.14 EUR
480+3.45 EUR
1200+3.2 EUR
2640+3.01 EUR
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IGW50N60TFKSA1 IGW50N60TFKSA1 INFINEON TECHNOLOGIES IGW50N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 64A
Collector-emitter voltage: 600V
Pulsed collector current: 150A
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
16+5.34 EUR
18+4.91 EUR
19+4.58 EUR
Mindestbestellmenge: 16 Stücke
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IGW50N60TFKSA1 IGW50N60TFKSA1 Infineon Technologies INFN-S-A0001299822-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.21 EUR
30+4.53 EUR
Mindestbestellmenge: 3 Stücke
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IGW50N60TFKSA1 IGW50N60TFKSA1 Infineon Technologies Infineon_IGW50N60T_DataSheet_v02_08_EN.pdf IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 165 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.29 EUR
10+6.09 EUR
100+4.55 EUR
480+3.8 EUR
1200+3.53 EUR
2640+3.31 EUR
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IKFW50N60DH3XKSA1 IKFW50N60DH3XKSA1 Infineon Technologies Infineon_IKFW50N60DH3_DataSheet_v02_01_EN.pdf IGBTs INDUSTRY
auf Bestellung 97 Stücke:
Lieferzeit 10-14 Tag (e)
1+16.56 EUR
10+10.12 EUR
100+8.46 EUR
480+7.77 EUR
1200+7.16 EUR
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IKFW50N60ETXKSA1 IKFW50N60ETXKSA1 Infineon Technologies Infineon-IKFW50N60ET-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e88a432b2 Description: IGBT TRENCH FS 600V 73A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 91 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/305ns
Switching Energy: 1.5mJ (on), 1.42mJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 164 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.18 EUR
30+9.44 EUR
120+7.95 EUR
Mindestbestellmenge: 2 Stücke
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IKW50N60DTPXKSA1 IKW50N60DTPXKSA1 INFINEON TECHNOLOGIES IKW50N60DTP.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 61A
Power dissipation: 159.6W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 233ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 436 Stücke:
Lieferzeit 14-21 Tag (e)
19+4.62 EUR
27+3.17 EUR
32+2.69 EUR
120+2.43 EUR
Mindestbestellmenge: 19 Stücke
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IKW50N60DTPXKSA1 IKW50N60DTPXKSA1 Infineon Technologies Infineon-IKW50N60DTP-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153cbc2c1c17cc1 Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/215ns
Switching Energy: 1.53mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 249 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 319.2 W
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.25 EUR
30+3.96 EUR
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IKW50N60H3 IKW50N60H3 Infineon info-tikw50n60h3.pdf Transistor IGBT ; 600V; 20V; 100A; 200A; 333W; 4,1V~5,7V; 315nC; -40°C~175°C;   IKW50N60H3 TIKW50n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
5+9.66 EUR
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IKW50N60H3FKSA1 IKW50N60H3FKSA1 Infineon Technologies Infineon_IKW50N60H3_DataSheet_v02_02_EN.pdf IGBTs HIGH SPEED SWITCHING
auf Bestellung 27 Stücke:
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1+12.9 EUR
10+8.08 EUR
100+6.59 EUR
480+5.53 EUR
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IKW50N60T IKW50N60T Infineon TIKW50n60t_0001.pdf Trans IGBT Chip N-CH 600V 80A 333000mW Automotive 3-Pin(3+Tab)TO247 IKW50N60TFKSA1 IKW50N60T TIKW50n60t
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
4+13.45 EUR
Mindestbestellmenge: 4 Stücke
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IKW50N60T IKW50N60T Infineon TIKW50n60t_0001.pdf Trans IGBT Chip N-CH 600V 80A 333000mW Automotive 3-Pin(3+Tab)TO247 IKW50N60TFKSA1 IKW50N60T TIKW50n60t
Anzahl je Verpackung: 2 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
4+13.45 EUR
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IKW50N60T IKW50N60T Infineon Technologies Infineon_IKW50N60T_DS_v02_06_EN.pdf IGBTs LOW LOSS DuoPack 600V 50A
auf Bestellung 1174 Stücke:
Lieferzeit 10-14 Tag (e)
1+13.36 EUR
10+8.95 EUR
100+7.19 EUR
480+6.39 EUR
1200+5.65 EUR
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IKW50N60TAFKSA1 IKW50N60TAFKSA1 Infineon Technologies IKW50N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4288ce93e21 Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 9853 Stücke:
Lieferzeit 10-14 Tag (e)
60+9.2 EUR
Mindestbestellmenge: 60 Stücke
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IKW50N60TFKSA1 IKW50N60TFKSA1 INFINEON TECHNOLOGIES IKW50N60T-dte.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+42.54 EUR
Mindestbestellmenge: 2 Stücke
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IKW50N60TFKSA1 IKW50N60TFKSA1 Infineon Technologies IKW50N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4288ce93e21 Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 636 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.42 EUR
30+7.69 EUR
120+6.44 EUR
510+5.51 EUR
Mindestbestellmenge: 2 Stücke
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IKW50N60TFKSA1 IKW50N60TFKSA1 Infineon Technologies Infineon_IKW50N60T_DS_v02_06_EN.pdf IGBTs LOW LOSS DuoPack 600V 50A
auf Bestellung 435 Stücke:
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1+13.17 EUR
10+7.54 EUR
100+6.33 EUR
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IXFH50N60P3 IXFH50N60P3 IXYS IXFH(T,Q)50N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO247-3
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
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IXFH50N60P3 IXFH50N60P3 IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_50N60P3_Datasheet.PDF MOSFETs 600V 50A 0.145Ohm PolarP3 Power MOSFET
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IXFH50N60P3 IXFH50N60P3 IXYS IXFx50N60P3.pdf Description: MOSFET N-CH 600V 50A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
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IXFQ50N60P3 IXFQ50N60P3 IXYS IXFH(T,Q)50N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
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IXFQ50N60P3 IXFQ50N60P3 IXYS IXFx50N60P3.pdf Description: MOSFET N-CH 600V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
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IXFT50N60P3 IXFT50N60P3 IXYS IXFH(T,Q)50N60P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
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IXFT50N60P3 IXFT50N60P3 IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_50N60P3_Datasheet.PDF MOSFETs 600V 50A 0.145Ohm PolarP3 Power MOSFET
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IXFT50N60P3 IXFT50N60P3 IXYS IXFx50N60P3.pdf Description: MOSFET N-CH 600V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
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IXFT50N60X IXFT50N60X IXYS IXFH(Q,T)50N60X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 195ns
Features of semiconductor devices: ultra junction x-class
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IXXA50N60B3 IXYS Description: IGBT 600V 120A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 27ns/150ns
Switching Energy: 670µJ (on), 1.2mJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
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IXXH150N60C3 IXXH150N60C3 IXYS IXXH150N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-off time: 230ns
Gate-emitter voltage: ±20V
Collector current: 150A
Collector-emitter voltage: 600V
Pulsed collector current: 700A
Turn-on time: 0.1µs
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IXXH150N60C3 IXXH150N60C3 IXYS Littelfuse_Discrete_IGBTs_XPT_IXXH150N60C3_Datasheet.PDF IGBTs TO247 600V 150A XPT
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IXXH150N60C3 IXXH150N60C3 IXYS littelfusediscreteigbtsxptixxh150n60c3datashe.pdf Description: IGBT PT 600V 300A TO-247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 34ns/120ns
Switching Energy: 3.4mJ (on), 1.8mJ (off)
Test Condition: 400V, 75A, 2Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 1360 W
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IXXH50N60B3 IXXH50N60B3 IXYS Littelfuse_Discrete_IGBTs_XPT_IXX_50N60B3_Datasheet.PDF IGBTs GenX3 600V XPT IGBTs
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IXXH50N60B3 IXXH50N60B3 IXYS littelfuse-discrete-igbts-ixx-50n60b3-datasheet?assetguid=0584ed69-861c-477c-9ed3-244c01c8d170 Description: IGBT PT 600V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
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IXYN150N60B3 IXYN150N60B3 IXYS Littelfuse_Discrete_IGBTs_XPT_IXYN150N60B3_Datasheet.PDF IGBTs SOT227 600V 140A GENX3
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IXYN150N60B3 IXYN150N60B3 IXYS DS100548BIXYN150N60B3.pdf Description: IGBT 600V 250A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 27ns/167ns
Switching Energy: 4.2mJ (on), 2.6mJ (off)
Test Condition: 400V, 75A, 2Ohm, 15V
Gate Charge: 260 nC
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 750 A
Power - Max: 830 W
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NGTB50N60FWG NGTB50N60FWG onsemi ngtb50n60fw-d.pdf Description: IGBT 600V 100A 223W TO247
Packaging: Tube
Part Status: Obsolete
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NGTB50N60S1WG NGTB50N60S1WG onsemi NGTB50N60S1WG.pdf Description: IGBT TRENCH 600V 100A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 94 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 100ns/237ns
Switching Energy: 1.5mJ (on), 460µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 417 W
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NGTB50N60SWG NGTB50N60SWG onsemi ngtb50n60sw-d.pdf Description: IGBT TRENCH FS 600V 100A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 376 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/144ns
Switching Energy: 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 135 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
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NGTG50N60FLWG NGTG50N60FLWG onsemi NGTG50N60FLWG.pdf Description: IGBT TRENCH 600V 100A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 116ns/292ns
Switching Energy: 1.1mJ (on), 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 310 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 223 W
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NGTG50N60FWG NGTG50N60FWG onsemi ngtg50n60fw-d.pdf Description: IGBT TRENCH 600V 100A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 117ns/285ns
Switching Energy: 1.1mJ (on), 1.2mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 223 W
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RM150N60HD-W RM150N60HD-W Rectron rm150n60hd.pdf MOSFETs
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SGW50N60HSFKSA1 SGW50N60HSFKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 100A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 47ns/310ns
Switching Energy: 1.96mJ
Test Condition: 400V, 50A, 6.8Ohm, 15V
Gate Charge: 179 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 416 W
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SIHA150N60E-GE3 SIHA150N60E-GE3 Vishay / Siliconix siha150n60e.pdf MOSFETs 600Vds 30V Vgs TO-220
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SIHA150N60E-GE3 SIHA150N60E-GE3 Vishay Siliconix siha150n60e.pdf Description: E SERIES POWER MOSFET THIN-LEAD
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
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SIHB150N60E-GE3 SIHB150N60E-GE3 Vishay / Siliconix sihb150n60e.pdf MOSFETs E Series Power MOSFET D2PAK (TO-263), 158 mohm a. 10V
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SIHB150N60E-GE3 SIHB150N60E-GE3 Vishay Siliconix sihb150n60e.pdf Description: E SERIES POWER MOSFET D2PAK (TO-
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
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SIHG050N60E-GE3 SIHG050N60E-GE3 Vishay Siliconix sihg050n60e.pdf Description: MOSFET N-CH 600V 51A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 23A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3459 pF @ 100 V
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SGW50N60HS
Produktcode: 73803
zu Favoriten hinzufügen Lieblingsprodukt
SGW50N60HS
Hersteller: Infineon
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247-3
Kollektor-Emitter-Spannung Vces, V: 600 В
Sättigungsspannung Vce, V: 2,8 В
Kollektorstrom Ic bei 25°C, A: 100 А
Kollektorstrom Ic bei 100°C, A: 50 А
auf Bestellung: 10 St.
  • 10 St. - Lieferzeit 21-28 Tag (e)
AnzahlPrivatkunde
1+12.53 EUR
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SGW50N60HS
Produktcode: 217211
zu Favoriten hinzufügen Lieblingsprodukt
SGW50N60HS
Hersteller: China
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247-3
Kollektor-Emitter-Spannung Vces, V: 600 В
Sättigungsspannung Vce, V: 2,8 В
Kollektorstrom Ic bei 25°C, A: 100 А
Kollektorstrom Ic bei 100°C, A: 50 А
auf Bestellung: 7 St.
  • 7 St. - Lieferzeit 21-28 Tag (e)
AnzahlPrivatkunde
1+9.4 EUR
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AIKW50N60CTXKSA1 Infineon_AIKW50N60CT_DS_v02_01_EN.pdf
AIKW50N60CTXKSA1
Hersteller: Infineon Technologies
IGBTs DISCRETES
auf Bestellung 127 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+17.53 EUR
10+12.4 EUR
100+11.1 EUR
480+9.97 EUR
1200+9.42 EUR
2640+9.4 EUR
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AIKW50N60CTXKSA1 Infineon-AIKW50N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382c6127ca1
AIKW50N60CTXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 1.2mJ (on), 1.4mJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 353 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.54 EUR
10+12.05 EUR
30+11.03 EUR
120+10.12 EUR
270+9.72 EUR
Mindestbestellmenge: 2 Stücke
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FDBL0150N60 fdbl0150n60-d.pdf
Hersteller: Fairchild Semiconductor
Description: FDBL0150N60 - N-CHANNEL POWERTRE
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
auf Bestellung 2380 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
59+9.38 EUR
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FDBL0150N60 FDBL0150N60-D.pdf
FDBL0150N60
Hersteller: onsemi
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
auf Bestellung 1098 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.93 EUR
10+12.28 EUR
100+9.17 EUR
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FDBL0150N60 FDBL0150N60-D.pdf fdbl0150n60-d.pdf
FDBL0150N60
Hersteller: onsemi
MOSFETs Update code D
auf Bestellung 840 Stücke:
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AnzahlPrivatkunde
1+17.95 EUR
10+12.26 EUR
100+10.09 EUR
500+9.01 EUR
1000+8.43 EUR
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IGB50N60T Infineon_IGB50N60T_DS_v02_07_EN.pdf
IGB50N60T
Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 133 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+10.25 EUR
10+6.72 EUR
100+4.94 EUR
500+4.4 EUR
1000+3.89 EUR
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IGB50N60TATMA1 IGB50N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42812613d55
IGB50N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 100A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 2337 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.97 EUR
10+6.62 EUR
100+4.72 EUR
500+4.25 EUR
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IGB50N60TATMA1 Infineon_IGB50N60T_DS_v02_07_EN.pdf
IGB50N60TATMA1
Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+9.78 EUR
10+6.5 EUR
100+4.65 EUR
500+4.19 EUR
1000+3.94 EUR
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IGB50N60TATMA1 IGB50N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42812613d55
IGB50N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 100A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+3.65 EUR
2000+3.47 EUR
Mindestbestellmenge: 1000 Stücke
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IGW50N60H3FKSA1 IGW50N60H3-DTE.pdf
IGW50N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Manufacturer series: H3
Collector-emitter voltage: 600V
Pulsed collector current: 200A
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
20+4.28 EUR
22+3.92 EUR
24+3.69 EUR
30+3.3 EUR
120+2.89 EUR
150+2.84 EUR
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IGW50N60H3FKSA1 info-tigw50n60h3.pdf
IGW50N60H3FKSA1
Hersteller: Infineon
IGBT 600V 100A 333W IGW50N60H3FKSA1 IGW50N60H3 TIGW50n60h3
Anzahl je Verpackung: 2 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
2+17.83 EUR
Mindestbestellmenge: 2 Stücke
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IGW50N60H3FKSA1 IGW50N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043266237920126bc64524041af
IGW50N60H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/235ns
Switching Energy: 2.36mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 333 W
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
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IGW50N60T Infineon_IGW50N60T_DataSheet_v02_08_EN.pdf
IGW50N60T
Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+8.46 EUR
10+5.55 EUR
100+4.14 EUR
480+3.45 EUR
1200+3.2 EUR
2640+3.01 EUR
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IGW50N60TFKSA1 IGW50N60T-DTE.pdf
IGW50N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 64A
Collector-emitter voltage: 600V
Pulsed collector current: 150A
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
16+5.34 EUR
18+4.91 EUR
19+4.58 EUR
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IGW50N60TFKSA1 INFN-S-A0001299822-1.pdf?t.download=true&u=5oefqw
IGW50N60TFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.21 EUR
30+4.53 EUR
Mindestbestellmenge: 3 Stücke
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IGW50N60TFKSA1 Infineon_IGW50N60T_DataSheet_v02_08_EN.pdf
IGW50N60TFKSA1
Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 165 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+9.29 EUR
10+6.09 EUR
100+4.55 EUR
480+3.8 EUR
1200+3.53 EUR
2640+3.31 EUR
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IKFW50N60DH3XKSA1 Infineon_IKFW50N60DH3_DataSheet_v02_01_EN.pdf
IKFW50N60DH3XKSA1
Hersteller: Infineon Technologies
IGBTs INDUSTRY
auf Bestellung 97 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+16.56 EUR
10+10.12 EUR
100+8.46 EUR
480+7.77 EUR
1200+7.16 EUR
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IKFW50N60ETXKSA1 Infineon-IKFW50N60ET-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e88a432b2
IKFW50N60ETXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 73A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 91 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/305ns
Switching Energy: 1.5mJ (on), 1.42mJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 164 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.18 EUR
30+9.44 EUR
120+7.95 EUR
Mindestbestellmenge: 2 Stücke
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IKW50N60DTPXKSA1 IKW50N60DTP.pdf
IKW50N60DTPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 61A
Power dissipation: 159.6W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 233ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 436 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
19+4.62 EUR
27+3.17 EUR
32+2.69 EUR
120+2.43 EUR
Mindestbestellmenge: 19 Stücke
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IKW50N60DTPXKSA1 Infineon-IKW50N60DTP-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153cbc2c1c17cc1
IKW50N60DTPXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/215ns
Switching Energy: 1.53mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 249 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 319.2 W
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.25 EUR
30+3.96 EUR
Mindestbestellmenge: 3 Stücke
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IKW50N60H3 info-tikw50n60h3.pdf
IKW50N60H3
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 100A; 200A; 333W; 4,1V~5,7V; 315nC; -40°C~175°C;   IKW50N60H3 TIKW50n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
5+9.66 EUR
Mindestbestellmenge: 5 Stücke
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IKW50N60H3FKSA1 Infineon_IKW50N60H3_DataSheet_v02_02_EN.pdf
IKW50N60H3FKSA1
Hersteller: Infineon Technologies
IGBTs HIGH SPEED SWITCHING
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+12.9 EUR
10+8.08 EUR
100+6.59 EUR
480+5.53 EUR
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IKW50N60T TIKW50n60t_0001.pdf
IKW50N60T
Hersteller: Infineon
Trans IGBT Chip N-CH 600V 80A 333000mW Automotive 3-Pin(3+Tab)TO247 IKW50N60TFKSA1 IKW50N60T TIKW50n60t
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
4+13.45 EUR
Mindestbestellmenge: 4 Stücke
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IKW50N60T TIKW50n60t_0001.pdf
IKW50N60T
Hersteller: Infineon
Trans IGBT Chip N-CH 600V 80A 333000mW Automotive 3-Pin(3+Tab)TO247 IKW50N60TFKSA1 IKW50N60T TIKW50n60t
Anzahl je Verpackung: 2 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
4+13.45 EUR
Mindestbestellmenge: 4 Stücke
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IKW50N60T Infineon_IKW50N60T_DS_v02_06_EN.pdf
IKW50N60T
Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 600V 50A
auf Bestellung 1174 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+13.36 EUR
10+8.95 EUR
100+7.19 EUR
480+6.39 EUR
1200+5.65 EUR
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IKW50N60TAFKSA1 IKW50N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4288ce93e21
IKW50N60TAFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 9853 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
60+9.2 EUR
Mindestbestellmenge: 60 Stücke
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IKW50N60TFKSA1 IKW50N60T-dte.pdf
IKW50N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+42.54 EUR
Mindestbestellmenge: 2 Stücke
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IKW50N60TFKSA1 IKW50N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4288ce93e21
IKW50N60TFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 636 Stücke:
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IKW50N60TFKSA1 Infineon_IKW50N60T_DS_v02_06_EN.pdf
IKW50N60TFKSA1
Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 600V 50A
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IXFH50N60P3 IXFH(T,Q)50N60P3.pdf
IXFH50N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO247-3
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 159 Stücke:
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IXFH50N60P3 Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_50N60P3_Datasheet.PDF
IXFH50N60P3
Hersteller: IXYS
MOSFETs 600V 50A 0.145Ohm PolarP3 Power MOSFET
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IXFH50N60P3 IXFx50N60P3.pdf
IXFH50N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 50A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
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IXFQ50N60P3 IXFH(T,Q)50N60P3.pdf
IXFQ50N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 193 Stücke:
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IXFQ50N60P3 IXFx50N60P3.pdf
IXFQ50N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
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IXFT50N60P3 IXFH(T,Q)50N60P3.pdf
IXFT50N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 116 Stücke:
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IXFT50N60P3 Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_50N60P3_Datasheet.PDF
IXFT50N60P3
Hersteller: IXYS
MOSFETs 600V 50A 0.145Ohm PolarP3 Power MOSFET
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IXFT50N60P3 IXFx50N60P3.pdf
IXFT50N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
auf Bestellung 424 Stücke:
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IXFT50N60X IXFH(Q,T)50N60X.pdf
IXFT50N60X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 195ns
Features of semiconductor devices: ultra junction x-class
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IXXA50N60B3
Hersteller: IXYS
Description: IGBT 600V 120A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 27ns/150ns
Switching Energy: 670µJ (on), 1.2mJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
auf Bestellung 750 Stücke:
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IXXH150N60C3 IXXH150N60C3.pdf
IXXH150N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-off time: 230ns
Gate-emitter voltage: ±20V
Collector current: 150A
Collector-emitter voltage: 600V
Pulsed collector current: 700A
Turn-on time: 0.1µs
auf Bestellung 60 Stücke:
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5+18.23 EUR
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IXXH150N60C3 Littelfuse_Discrete_IGBTs_XPT_IXXH150N60C3_Datasheet.PDF
IXXH150N60C3
Hersteller: IXYS
IGBTs TO247 600V 150A XPT
auf Bestellung 103 Stücke:
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IXXH150N60C3 littelfusediscreteigbtsxptixxh150n60c3datashe.pdf
IXXH150N60C3
Hersteller: IXYS
Description: IGBT PT 600V 300A TO-247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 34ns/120ns
Switching Energy: 3.4mJ (on), 1.8mJ (off)
Test Condition: 400V, 75A, 2Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 1360 W
auf Bestellung 870 Stücke:
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IXXH50N60B3 Littelfuse_Discrete_IGBTs_XPT_IXX_50N60B3_Datasheet.PDF
IXXH50N60B3
Hersteller: IXYS
IGBTs GenX3 600V XPT IGBTs
auf Bestellung 251 Stücke:
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IXXH50N60B3 littelfuse-discrete-igbts-ixx-50n60b3-datasheet?assetguid=0584ed69-861c-477c-9ed3-244c01c8d170
IXXH50N60B3
Hersteller: IXYS
Description: IGBT PT 600V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
auf Bestellung 900 Stücke:
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IXYN150N60B3 Littelfuse_Discrete_IGBTs_XPT_IXYN150N60B3_Datasheet.PDF
IXYN150N60B3
Hersteller: IXYS
IGBTs SOT227 600V 140A GENX3
auf Bestellung 194 Stücke:
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1+56.6 EUR
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IXYN150N60B3 DS100548BIXYN150N60B3.pdf
IXYN150N60B3
Hersteller: IXYS
Description: IGBT 600V 250A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 27ns/167ns
Switching Energy: 4.2mJ (on), 2.6mJ (off)
Test Condition: 400V, 75A, 2Ohm, 15V
Gate Charge: 260 nC
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 750 A
Power - Max: 830 W
auf Bestellung 130 Stücke:
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NGTB50N60FWG ngtb50n60fw-d.pdf
NGTB50N60FWG
Hersteller: onsemi
Description: IGBT 600V 100A 223W TO247
Packaging: Tube
Part Status: Obsolete
auf Bestellung 10950 Stücke:
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76+7.21 EUR
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NGTB50N60S1WG NGTB50N60S1WG.pdf
NGTB50N60S1WG
Hersteller: onsemi
Description: IGBT TRENCH 600V 100A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 94 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 100ns/237ns
Switching Energy: 1.5mJ (on), 460µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 417 W
auf Bestellung 1080 Stücke:
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NGTB50N60SWG ngtb50n60sw-d.pdf
NGTB50N60SWG
Hersteller: onsemi
Description: IGBT TRENCH FS 600V 100A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 376 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/144ns
Switching Energy: 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 135 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
auf Bestellung 1530 Stücke:
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91+6.06 EUR
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NGTG50N60FLWG NGTG50N60FLWG.pdf
NGTG50N60FLWG
Hersteller: onsemi
Description: IGBT TRENCH 600V 100A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 116ns/292ns
Switching Energy: 1.1mJ (on), 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 310 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 223 W
auf Bestellung 4314 Stücke:
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88+6.3 EUR
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NGTG50N60FWG ngtg50n60fw-d.pdf
NGTG50N60FWG
Hersteller: onsemi
Description: IGBT TRENCH 600V 100A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 117ns/285ns
Switching Energy: 1.1mJ (on), 1.2mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 223 W
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91+6.06 EUR
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RM150N60HD-W rm150n60hd.pdf
RM150N60HD-W
Hersteller: Rectron
MOSFETs
auf Bestellung 683 Stücke:
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1+7.6 EUR
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100+3.42 EUR
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SGW50N60HSFKSA1 fundamentals-of-power-semiconductors
SGW50N60HSFKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 100A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 47ns/310ns
Switching Energy: 1.96mJ
Test Condition: 400V, 50A, 6.8Ohm, 15V
Gate Charge: 179 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 416 W
auf Bestellung 1870 Stücke:
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84+6.56 EUR
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SIHA150N60E-GE3 siha150n60e.pdf
SIHA150N60E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 600Vds 30V Vgs TO-220
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1+8.82 EUR
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SIHA150N60E-GE3 siha150n60e.pdf
SIHA150N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET THIN-LEAD
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 1960 Stücke:
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3+8.98 EUR
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SIHB150N60E-GE3 sihb150n60e.pdf
SIHB150N60E-GE3
Hersteller: Vishay / Siliconix
MOSFETs E Series Power MOSFET D2PAK (TO-263), 158 mohm a. 10V
auf Bestellung 1767 Stücke:
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500+3.58 EUR
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SIHB150N60E-GE3 sihb150n60e.pdf
SIHB150N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET D2PAK (TO-
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 991 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.34 EUR
10+6.19 EUR
100+4.4 EUR
500+3.63 EUR
Mindestbestellmenge: 3 Stücke
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SIHG050N60E-GE3 sihg050n60e.pdf
SIHG050N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 51A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 23A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3459 pF @ 100 V
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.65 EUR
10+14.24 EUR
100+10.64 EUR
Mindestbestellmenge: 2 Stücke
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