| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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WMQ80N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 320A Power dissipation: 44.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2965 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ80N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 320A Power dissipation: 44.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2965 Stücke: Lieferzeit 7-14 Tag (e) |
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WMR050N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Gate charge: 16nC On-state resistance: 5.4mΩ Power dissipation: 2.4W Drain current: 17A Gate-source voltage: ±20V Drain-source voltage: 30V Pulsed drain current: 68A Case: DFN2020-6 Polarisation: unipolar |
auf Bestellung 328 Stücke: Lieferzeit 14-21 Tag (e) |
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WMR050N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Gate charge: 16nC On-state resistance: 5.4mΩ Power dissipation: 2.4W Drain current: 17A Gate-source voltage: ±20V Drain-source voltage: 30V Pulsed drain current: 68A Case: DFN2020-6 Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 328 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMR05N10TS | WAYON | WMR05N10TS-CYG SMD N channel transistors |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMR05P04TS | WAYON | WMR05P04TS-CYG SMD P channel transistors |
auf Bestellung 380 Stücke: Lieferzeit 7-14 Tag (e) |
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WMR07N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Pulsed drain current: 35A Power dissipation: 1.6W Case: DFN2020-6 On-state resistance: 18mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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WMR07N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Pulsed drain current: 35A Power dissipation: 1.6W Case: DFN2020-6 On-state resistance: 18mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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WMR07N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 28A Drain-source voltage: 60V Drain current: 7A Gate charge: 22nC On-state resistance: 33mΩ Power dissipation: 2.7W Kind of package: reel; tape Case: DFN2020-6 Kind of channel: enhancement |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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WMR07N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 28A Drain-source voltage: 60V Drain current: 7A Gate charge: 22nC On-state resistance: 33mΩ Power dissipation: 2.7W Kind of package: reel; tape Case: DFN2020-6 Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMR07P03TS | WAYON | WMR07P03TS-CYG SMD P channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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WMR09N02T1 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 9A; Idm: 36A; 1.67W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 9A Pulsed drain current: 36A Power dissipation: 1.67W Case: DFN2020-6 Gate-source voltage: ±12V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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WMR09N02T1 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 9A; Idm: 36A; 1.67W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 9A Pulsed drain current: 36A Power dissipation: 1.67W Case: DFN2020-6 Gate-source voltage: ±12V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMR10N03T1 | WAYON | WMR10N03T1-CYG SMD N channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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WMR12N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 48A; 2.1W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.5A Pulsed drain current: 48A Power dissipation: 2.1W Case: DFN2020-6 Gate-source voltage: ±20V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| WMR12P02T1 | WAYON | WMR12P02T1-CYG SMD P channel transistors |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMR13N03T1 | WAYON | WMR13N03T1-CYG SMD N channel transistors |
auf Bestellung 485 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMR140NV6LG4 | WAYON | WMR140NV6LG4-CYG SMD N channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMR14N03TB | WAYON | WMR14N03TB-CYG SMD N channel transistors |
auf Bestellung 438 Stücke: Lieferzeit 7-14 Tag (e) |
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WMR15N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 14.5A; Idm: 58A; 2.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 14.5A Pulsed drain current: 58A Power dissipation: 2.2W Case: DFN2020-6 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 27.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 365 Stücke: Lieferzeit 14-21 Tag (e) |
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WMR15N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 14.5A; Idm: 58A; 2.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 14.5A Pulsed drain current: 58A Power dissipation: 2.2W Case: DFN2020-6 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 27.2nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 365 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS02P15TS | WAYON | WMS02P15TS-CYG SMD P channel transistors |
auf Bestellung 495 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS032N04LG2 | WAYON | WMS032N04LG2-CYG SMD N channel transistors |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS048NV6HG4 | WAYON | WMS048NV6HG4-CYG SMD N channel transistors |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS048NV6LG4 | WAYON | WMS048NV6LG4-CYG SMD N channel transistors |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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WMS04N10T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 3.1W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4A Pulsed drain current: 16A Power dissipation: 3.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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WMS04N10T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 3.1W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4A Pulsed drain current: 16A Power dissipation: 3.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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WMS04N10TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 3.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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WMS04N10TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 3.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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WMS04P06TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.8A Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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WMS04P06TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.8A Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 990 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS04P10TS | WAYON | WMS04P10TS-CYG SMD P channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS05P04TS | WAYON | WMS05P04TS-CYG SMD P channel transistors |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS05P06T1 | WAYON | WMS05P06T1-CYG SMD P channel transistors |
auf Bestellung 489 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS05P10TS | WAYON | WMS05P10TS-CYG SMD P channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS06N10TS | WAYON | WMS06N10TS-CYG SMD N channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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WMS06N15T2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 5.8A; Idm: 23.2A; 3.2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 5.8A Pulsed drain current: 23.2A Power dissipation: 3.2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 9.8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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WMS06N15T2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 5.8A; Idm: 23.2A; 3.2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 5.8A Pulsed drain current: 23.2A Power dissipation: 3.2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 9.8nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS06P04T1 | WAYON | WMS06P04T1-CYG SMD P channel transistors |
auf Bestellung 59 Stücke: Lieferzeit 7-14 Tag (e) |
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WMS080N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 260A; 3W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 260A Power dissipation: 3W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 15.7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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WMS080N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 260A; 3W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 260A Power dissipation: 3W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 15.7nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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WMS08DH04T1 | WAYON |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 7.5/-5.5A; 2.2W; SOP8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 7.5/-5.5A Power dissipation: 2.2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 24/47mΩ Mounting: SMD Gate charge: 26/20nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 488 Stücke: Lieferzeit 14-21 Tag (e) |
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WMS08DH04T1 | WAYON |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 7.5/-5.5A; 2.2W; SOP8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 7.5/-5.5A Power dissipation: 2.2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 24/47mΩ Mounting: SMD Gate charge: 26/20nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 488 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS08DN06TS | WAYON | WMS08DN06TS-CYG Multi channel transistors |
auf Bestellung 494 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS08DP03TS | WAYON | WMS08DP03TS-CYG Multi channel transistors |
auf Bestellung 445 Stücke: Lieferzeit 7-14 Tag (e) |
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WMS08N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 3.1W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Pulsed drain current: 32A Power dissipation: 3.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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WMS08N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 3.1W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Pulsed drain current: 32A Power dissipation: 3.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 990 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS08P03T1 | WAYON | WMS08P03T1-CYG SMD P channel transistors |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS08P04TS | WAYON | WMS08P04TS-CYG SMD P channel transistors |
auf Bestellung 480 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS090DNV6LG4 | WAYON | WMS090DNV6LG4-CYG Multi channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS090NV6LG4 | WAYON | WMS090NV6LG4-CYG SMD N channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS099N10LGS | WAYON | WMS099N10LGS-CYG SMD N channel transistors |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS09DP03TS | WAYON | WMS09DP03TS-CYG Multi channel transistors |
auf Bestellung 155 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS09N06TS | WAYON | WMS09N06TS-CYG SMD N channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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WMS09P02TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -36A; 3W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Pulsed drain current: -36A Power dissipation: 3W Case: SOP8 Gate-source voltage: ±12V On-state resistance: 18mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 498 Stücke: Lieferzeit 14-21 Tag (e) |
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WMS09P02TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -36A; 3W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Pulsed drain current: -36A Power dissipation: 3W Case: SOP8 Gate-source voltage: ±12V On-state resistance: 18mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 498 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS09P06TS | WAYON | WMS09P06TS-CYG SMD P channel transistors |
auf Bestellung 384 Stücke: Lieferzeit 7-14 Tag (e) |
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WMS10DH04TS | WAYON |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 10/-8A; 3W; SOP8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 10/-8A Power dissipation: 3W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 16/33mΩ Mounting: SMD Gate charge: 26/30nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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WMS10DH04TS | WAYON |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 10/-8A; 3W; SOP8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 10/-8A Power dissipation: 3W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 16/33mΩ Mounting: SMD Gate charge: 26/30nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 400 Stücke: Lieferzeit 7-14 Tag (e) |
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WMS10DN04TS | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 10A; Idm: 40A; 3W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 10A Pulsed drain current: 40A Power dissipation: 3W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 15.5mΩ Mounting: SMD Gate charge: 25.8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 465 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ80N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2965 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 243+ | 0.29 EUR |
| 295+ | 0.24 EUR |
| 325+ | 0.22 EUR |
| WMQ80N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2965 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 243+ | 0.29 EUR |
| 295+ | 0.24 EUR |
| 325+ | 0.22 EUR |
| WMR050N03LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate charge: 16nC
On-state resistance: 5.4mΩ
Power dissipation: 2.4W
Drain current: 17A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 68A
Case: DFN2020-6
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate charge: 16nC
On-state resistance: 5.4mΩ
Power dissipation: 2.4W
Drain current: 17A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 68A
Case: DFN2020-6
Polarisation: unipolar
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 304+ | 0.24 EUR |
| 328+ | 0.21 EUR |
| WMR050N03LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate charge: 16nC
On-state resistance: 5.4mΩ
Power dissipation: 2.4W
Drain current: 17A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 68A
Case: DFN2020-6
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate charge: 16nC
On-state resistance: 5.4mΩ
Power dissipation: 2.4W
Drain current: 17A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 68A
Case: DFN2020-6
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 328 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 304+ | 0.24 EUR |
| 328+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| 3000+ | 0.15 EUR |
| 6000+ | 0.14 EUR |
| WMR05N10TS |
Hersteller: WAYON
WMR05N10TS-CYG SMD N channel transistors
WMR05N10TS-CYG SMD N channel transistors
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 291+ | 0.25 EUR |
| 1000+ | 0.072 EUR |
| 12000+ | 0.053 EUR |
| WMR05P04TS |
Hersteller: WAYON
WMR05P04TS-CYG SMD P channel transistors
WMR05P04TS-CYG SMD P channel transistors
auf Bestellung 380 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 380+ | 0.19 EUR |
| 12000+ | 0.13 EUR |
| WMR07N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 35A
Power dissipation: 1.6W
Case: DFN2020-6
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 35A
Power dissipation: 1.6W
Case: DFN2020-6
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 368+ | 0.19 EUR |
| 527+ | 0.14 EUR |
| 582+ | 0.12 EUR |
| 667+ | 0.11 EUR |
| WMR07N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 35A
Power dissipation: 1.6W
Case: DFN2020-6
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 35A
Power dissipation: 1.6W
Case: DFN2020-6
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 368+ | 0.19 EUR |
| 527+ | 0.14 EUR |
| 582+ | 0.12 EUR |
| 667+ | 0.11 EUR |
| 3000+ | 0.097 EUR |
| 6000+ | 0.094 EUR |
| WMR07N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 28A
Drain-source voltage: 60V
Drain current: 7A
Gate charge: 22nC
On-state resistance: 33mΩ
Power dissipation: 2.7W
Kind of package: reel; tape
Case: DFN2020-6
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 28A
Drain-source voltage: 60V
Drain current: 7A
Gate charge: 22nC
On-state resistance: 33mΩ
Power dissipation: 2.7W
Kind of package: reel; tape
Case: DFN2020-6
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 382+ | 0.19 EUR |
| 481+ | 0.15 EUR |
| 500+ | 0.14 EUR |
| WMR07N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 28A
Drain-source voltage: 60V
Drain current: 7A
Gate charge: 22nC
On-state resistance: 33mΩ
Power dissipation: 2.7W
Kind of package: reel; tape
Case: DFN2020-6
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 28A
Drain-source voltage: 60V
Drain current: 7A
Gate charge: 22nC
On-state resistance: 33mΩ
Power dissipation: 2.7W
Kind of package: reel; tape
Case: DFN2020-6
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 382+ | 0.19 EUR |
| 481+ | 0.15 EUR |
| 500+ | 0.14 EUR |
| 3000+ | 0.11 EUR |
| WMR07P03TS |
Hersteller: WAYON
WMR07P03TS-CYG SMD P channel transistors
WMR07P03TS-CYG SMD P channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 500+ | 0.14 EUR |
| 12000+ | 0.13 EUR |
| WMR09N02T1 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9A; Idm: 36A; 1.67W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 1.67W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9A; Idm: 36A; 1.67W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 1.67W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 329+ | 0.22 EUR |
| 472+ | 0.15 EUR |
| 500+ | 0.14 EUR |
| WMR09N02T1 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9A; Idm: 36A; 1.67W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 1.67W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9A; Idm: 36A; 1.67W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 1.67W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 329+ | 0.22 EUR |
| 472+ | 0.15 EUR |
| 500+ | 0.14 EUR |
| 3000+ | 0.11 EUR |
| WMR10N03T1 |
Hersteller: WAYON
WMR10N03T1-CYG SMD N channel transistors
WMR10N03T1-CYG SMD N channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| 477+ | 0.15 EUR |
| 500+ | 0.14 EUR |
| WMR12N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 48A; 2.1W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Pulsed drain current: 48A
Power dissipation: 2.1W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 48A; 2.1W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Pulsed drain current: 48A
Power dissipation: 2.1W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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| WMR12P02T1 |
Hersteller: WAYON
WMR12P02T1-CYG SMD P channel transistors
WMR12P02T1-CYG SMD P channel transistors
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 185+ | 0.39 EUR |
| 667+ | 0.11 EUR |
| 705+ | 0.1 EUR |
| WMR13N03T1 |
Hersteller: WAYON
WMR13N03T1-CYG SMD N channel transistors
WMR13N03T1-CYG SMD N channel transistors
auf Bestellung 485 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 424+ | 0.17 EUR |
| 447+ | 0.16 EUR |
| WMR140NV6LG4 |
Hersteller: WAYON
WMR140NV6LG4-CYG SMD N channel transistors
WMR140NV6LG4-CYG SMD N channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.55 EUR |
| 500+ | 0.14 EUR |
| 12000+ | 0.12 EUR |
| WMR14N03TB |
Hersteller: WAYON
WMR14N03TB-CYG SMD N channel transistors
WMR14N03TB-CYG SMD N channel transistors
auf Bestellung 438 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 90+ | 0.8 EUR |
| 382+ | 0.19 EUR |
| 404+ | 0.18 EUR |
| WMR15N03TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14.5A; Idm: 58A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.5A
Pulsed drain current: 58A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 27.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14.5A; Idm: 58A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.5A
Pulsed drain current: 58A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 27.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 365+ | 0.2 EUR |
| WMR15N03TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14.5A; Idm: 58A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.5A
Pulsed drain current: 58A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 27.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14.5A; Idm: 58A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.5A
Pulsed drain current: 58A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 27.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 365 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 365+ | 0.2 EUR |
| 500+ | 0.14 EUR |
| 3000+ | 0.1 EUR |
| 6000+ | 0.099 EUR |
| WMS02P15TS |
Hersteller: WAYON
WMS02P15TS-CYG SMD P channel transistors
WMS02P15TS-CYG SMD P channel transistors
auf Bestellung 495 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 385+ | 0.19 EUR |
| 407+ | 0.18 EUR |
| 8000+ | 0.17 EUR |
| WMS032N04LG2 |
Hersteller: WAYON
WMS032N04LG2-CYG SMD N channel transistors
WMS032N04LG2-CYG SMD N channel transistors
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.18 EUR |
| 90+ | 0.8 EUR |
| 99+ | 0.73 EUR |
| 8000+ | 0.44 EUR |
| WMS048NV6HG4 |
Hersteller: WAYON
WMS048NV6HG4-CYG SMD N channel transistors
WMS048NV6HG4-CYG SMD N channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
| 100+ | 0.72 EUR |
| 104+ | 0.69 EUR |
| 8000+ | 0.41 EUR |
| WMS048NV6LG4 |
Hersteller: WAYON
WMS048NV6LG4-CYG SMD N channel transistors
WMS048NV6LG4-CYG SMD N channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
| 100+ | 0.72 EUR |
| 104+ | 0.69 EUR |
| 8000+ | 0.41 EUR |
| WMS04N10T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 317+ | 0.23 EUR |
| 397+ | 0.18 EUR |
| 421+ | 0.17 EUR |
| 500+ | 0.15 EUR |
| WMS04N10T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 317+ | 0.23 EUR |
| 397+ | 0.18 EUR |
| 421+ | 0.17 EUR |
| 500+ | 0.15 EUR |
| 2000+ | 0.13 EUR |
| WMS04N10TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 365+ | 0.2 EUR |
| 527+ | 0.14 EUR |
| 589+ | 0.12 EUR |
| 667+ | 0.11 EUR |
| WMS04N10TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 365+ | 0.2 EUR |
| 527+ | 0.14 EUR |
| 589+ | 0.12 EUR |
| 667+ | 0.11 EUR |
| 2000+ | 0.099 EUR |
| 4000+ | 0.094 EUR |
| WMS04P06TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.8A
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.8A
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 338+ | 0.21 EUR |
| 481+ | 0.15 EUR |
| 538+ | 0.13 EUR |
| 603+ | 0.12 EUR |
| WMS04P06TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.8A
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.8A
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 990 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 338+ | 0.21 EUR |
| 481+ | 0.15 EUR |
| 538+ | 0.13 EUR |
| 603+ | 0.12 EUR |
| 2000+ | 0.11 EUR |
| 4000+ | 0.1 EUR |
| WMS04P10TS |
Hersteller: WAYON
WMS04P10TS-CYG SMD P channel transistors
WMS04P10TS-CYG SMD P channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 96+ | 0.75 EUR |
| 371+ | 0.19 EUR |
| 394+ | 0.18 EUR |
| WMS05P04TS |
Hersteller: WAYON
WMS05P04TS-CYG SMD P channel transistors
WMS05P04TS-CYG SMD P channel transistors
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 104+ | 0.69 EUR |
| 747+ | 0.096 EUR |
| 782+ | 0.092 EUR |
| WMS05P06T1 |
Hersteller: WAYON
WMS05P06T1-CYG SMD P channel transistors
WMS05P06T1-CYG SMD P channel transistors
auf Bestellung 489 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 104+ | 0.69 EUR |
| 435+ | 0.16 EUR |
| 8000+ | 0.15 EUR |
| WMS05P10TS |
Hersteller: WAYON
WMS05P10TS-CYG SMD P channel transistors
WMS05P10TS-CYG SMD P channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| 281+ | 0.25 EUR |
| 298+ | 0.24 EUR |
| WMS06N10TS |
Hersteller: WAYON
WMS06N10TS-CYG SMD N channel transistors
WMS06N10TS-CYG SMD N channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 119+ | 0.6 EUR |
| 379+ | 0.19 EUR |
| 400+ | 0.18 EUR |
| 8000+ | 0.17 EUR |
| WMS06N15T2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5.8A; Idm: 23.2A; 3.2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5.8A
Pulsed drain current: 23.2A
Power dissipation: 3.2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5.8A; Idm: 23.2A; 3.2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5.8A
Pulsed drain current: 23.2A
Power dissipation: 3.2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| WMS06N15T2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5.8A; Idm: 23.2A; 3.2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5.8A
Pulsed drain current: 23.2A
Power dissipation: 3.2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5.8A; Idm: 23.2A; 3.2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5.8A
Pulsed drain current: 23.2A
Power dissipation: 3.2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 10+ | 7.15 EUR |
| 25+ | 2.86 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.42 EUR |
| 2000+ | 0.4 EUR |
| WMS06P04T1 |
Hersteller: WAYON
WMS06P04T1-CYG SMD P channel transistors
WMS06P04T1-CYG SMD P channel transistors
auf Bestellung 59 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.22 EUR |
| 131+ | 0.54 EUR |
| 361+ | 0.2 EUR |
| 8000+ | 0.12 EUR |
| WMS080N10LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 260A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 260A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 260A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 260A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 100+ | 0.72 EUR |
| WMS080N10LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 260A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 260A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 260A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 260A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.4 EUR |
| 2000+ | 0.38 EUR |
| WMS08DH04T1 |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 7.5/-5.5A; 2.2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 7.5/-5.5A
Power dissipation: 2.2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24/47mΩ
Mounting: SMD
Gate charge: 26/20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 7.5/-5.5A; 2.2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 7.5/-5.5A
Power dissipation: 2.2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24/47mΩ
Mounting: SMD
Gate charge: 26/20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 488 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 283+ | 0.25 EUR |
| 338+ | 0.21 EUR |
| 360+ | 0.2 EUR |
| WMS08DH04T1 |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 7.5/-5.5A; 2.2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 7.5/-5.5A
Power dissipation: 2.2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24/47mΩ
Mounting: SMD
Gate charge: 26/20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 7.5/-5.5A; 2.2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 7.5/-5.5A
Power dissipation: 2.2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24/47mΩ
Mounting: SMD
Gate charge: 26/20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 488 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 283+ | 0.25 EUR |
| 338+ | 0.21 EUR |
| 360+ | 0.2 EUR |
| 500+ | 0.18 EUR |
| 2000+ | 0.16 EUR |
| 4000+ | 0.15 EUR |
| WMS08DN06TS |
Hersteller: WAYON
WMS08DN06TS-CYG Multi channel transistors
WMS08DN06TS-CYG Multi channel transistors
auf Bestellung 494 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 321+ | 0.22 EUR |
| 341+ | 0.21 EUR |
| WMS08DP03TS |
Hersteller: WAYON
WMS08DP03TS-CYG Multi channel transistors
WMS08DP03TS-CYG Multi channel transistors
auf Bestellung 445 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 321+ | 0.22 EUR |
| 341+ | 0.21 EUR |
| WMS08N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 327+ | 0.22 EUR |
| 407+ | 0.18 EUR |
| 432+ | 0.17 EUR |
| 500+ | 0.15 EUR |
| WMS08N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 990 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 327+ | 0.22 EUR |
| 407+ | 0.18 EUR |
| 432+ | 0.17 EUR |
| 500+ | 0.15 EUR |
| 2000+ | 0.13 EUR |
| WMS08P03T1 |
Hersteller: WAYON
WMS08P03T1-CYG SMD P channel transistors
WMS08P03T1-CYG SMD P channel transistors
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 108+ | 0.67 EUR |
| 618+ | 0.12 EUR |
| 650+ | 0.11 EUR |
| WMS08P04TS |
Hersteller: WAYON
WMS08P04TS-CYG SMD P channel transistors
WMS08P04TS-CYG SMD P channel transistors
auf Bestellung 480 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 135+ | 0.53 EUR |
| 480+ | 0.14 EUR |
| 8000+ | 0.12 EUR |
| WMS090DNV6LG4 |
Hersteller: WAYON
WMS090DNV6LG4-CYG Multi channel transistors
WMS090DNV6LG4-CYG Multi channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 99+ | 0.73 EUR |
| 244+ | 0.29 EUR |
| 260+ | 0.28 EUR |
| 8000+ | 0.27 EUR |
| WMS090NV6LG4 |
Hersteller: WAYON
WMS090NV6LG4-CYG SMD N channel transistors
WMS090NV6LG4-CYG SMD N channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 385+ | 0.19 EUR |
| 407+ | 0.18 EUR |
| 8000+ | 0.17 EUR |
| WMS099N10LGS |
Hersteller: WAYON
WMS099N10LGS-CYG SMD N channel transistors
WMS099N10LGS-CYG SMD N channel transistors
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.17 EUR |
| 90+ | 0.8 EUR |
| 94+ | 0.76 EUR |
| 8000+ | 0.46 EUR |
| WMS09DP03TS |
Hersteller: WAYON
WMS09DP03TS-CYG Multi channel transistors
WMS09DP03TS-CYG Multi channel transistors
auf Bestellung 155 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 76+ | 0.94 EUR |
| 155+ | 0.46 EUR |
| 8000+ | 0.35 EUR |
| WMS09N06TS |
Hersteller: WAYON
WMS09N06TS-CYG SMD N channel transistors
WMS09N06TS-CYG SMD N channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 94+ | 0.77 EUR |
| 397+ | 0.18 EUR |
| 417+ | 0.17 EUR |
| WMS09P02TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -36A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -36A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -36A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -36A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 334+ | 0.21 EUR |
| 417+ | 0.17 EUR |
| 439+ | 0.16 EUR |
| WMS09P02TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -36A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -36A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -36A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -36A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 498 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 334+ | 0.21 EUR |
| 417+ | 0.17 EUR |
| 439+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| 2000+ | 0.13 EUR |
| WMS09P06TS |
Hersteller: WAYON
WMS09P06TS-CYG SMD P channel transistors
WMS09P06TS-CYG SMD P channel transistors
auf Bestellung 384 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 118+ | 0.61 EUR |
| 295+ | 0.24 EUR |
| 313+ | 0.23 EUR |
| WMS10DH04TS |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 10/-8A; 3W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 10/-8A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 16/33mΩ
Mounting: SMD
Gate charge: 26/30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 10/-8A; 3W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 10/-8A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 16/33mΩ
Mounting: SMD
Gate charge: 26/30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 283+ | 0.25 EUR |
| 338+ | 0.21 EUR |
| 360+ | 0.2 EUR |
| WMS10DH04TS |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 10/-8A; 3W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 10/-8A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 16/33mΩ
Mounting: SMD
Gate charge: 26/30nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 10/-8A; 3W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 10/-8A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 16/33mΩ
Mounting: SMD
Gate charge: 26/30nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 400 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 283+ | 0.25 EUR |
| 338+ | 0.21 EUR |
| 360+ | 0.2 EUR |
| 500+ | 0.18 EUR |
| 2000+ | 0.16 EUR |
| 4000+ | 0.15 EUR |
| WMS10DN04TS |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 10A; Idm: 40A; 3W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15.5mΩ
Mounting: SMD
Gate charge: 25.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 10A; Idm: 40A; 3W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15.5mΩ
Mounting: SMD
Gate charge: 25.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 465 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 262+ | 0.27 EUR |
| 313+ | 0.23 EUR |
| 332+ | 0.22 EUR |









