| Foto | Bezeichnung | Hersteller | Beschreibung |
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WMQ175N10HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 65.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Pulsed drain current: 168A Power dissipation: 65.8W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 495 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ175N10HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 65.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Pulsed drain current: 168A Power dissipation: 65.8W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 495 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ175N10LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 172A; 65.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 43A Pulsed drain current: 172A Power dissipation: 65.8W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 22.7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 501 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ175N10LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 172A; 65.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 43A Pulsed drain current: 172A Power dissipation: 65.8W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 22.7nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 501 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ18P04TS | WAYON | WMQ18P04TS-CYG SMD P channel transistors |
auf Bestellung 497 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ20DN06TS | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 80A; 22.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 80A Power dissipation: 22.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ20DN06TS | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 80A; 22.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 80A Power dissipation: 22.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 450 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ20N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 80A Power dissipation: 25W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ20N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 80A Power dissipation: 25W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 148 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ24P04TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -24A; Idm: -96A; 27W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -24A Pulsed drain current: -96A Power dissipation: 27W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 498 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ24P04TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -24A; Idm: -96A; 27W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -24A Pulsed drain current: -96A Power dissipation: 27W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 498 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ25P03T1 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -100A; 22W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -25A Pulsed drain current: -100A Power dissipation: 22W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 275 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ25P03T1 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -100A; 22W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -25A Pulsed drain current: -100A Power dissipation: 22W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 275 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ25P04T1 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -25A; Idm: -100A; 31.2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -25A Pulsed drain current: -100A Power dissipation: 31.2W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 488 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ25P04T1 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -25A; Idm: -100A; 31.2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -25A Pulsed drain current: -100A Power dissipation: 31.2W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 488 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ25P06TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -100A; 30W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -25A Pulsed drain current: -100A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 265 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ25P06TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -100A; 30W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -25A Pulsed drain current: -100A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 265 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ26P02TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -26A; Idm: -104A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -26A Pulsed drain current: -104A Power dissipation: 20W Case: PDFN3030-8 Gate-source voltage: ±12V On-state resistance: 17mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ26P02TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -26A; Idm: -104A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -26A Pulsed drain current: -104A Power dissipation: 20W Case: PDFN3030-8 Gate-source voltage: ±12V On-state resistance: 17mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ28N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 54A; 21W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 28A Pulsed drain current: 54A Power dissipation: 21W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ28N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 54A; 21W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 28A Pulsed drain current: 54A Power dissipation: 21W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 490 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ30DN04TS | WAYON | WMQ30DN04TS-CYG Multi channel transistors |
auf Bestellung 489 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ30DP03TS | WAYON | WMQ30DP03TS-CYG Multi channel transistors |
auf Bestellung 490 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ30N02T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 75A; Idm: 300A; 37.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 75A Pulsed drain current: 300A Power dissipation: 37.8W Case: PDFN3030-8 Gate-source voltage: ±10V On-state resistance: 4mΩ Mounting: SMD Gate charge: 43.8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ30N02T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 75A; Idm: 300A; 37.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 75A Pulsed drain current: 300A Power dissipation: 37.8W Case: PDFN3030-8 Gate-source voltage: ±10V On-state resistance: 4mΩ Mounting: SMD Gate charge: 43.8nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ30N03T2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 100A; 24W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Pulsed drain current: 100A Power dissipation: 24W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 460 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ30N03T2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 100A; 24W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Pulsed drain current: 100A Power dissipation: 24W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 460 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ30N04TS | WAYON | WMQ30N04TS-CYG SMD N channel transistors |
auf Bestellung 499 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ30N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 120A Power dissipation: 34.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 340 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ30N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 120A Power dissipation: 34.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 340 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ30P03T1 | WAYON | WMQ30P03T1-CYG SMD P channel transistors |
auf Bestellung 485 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ30P04T1 | WAYON | WMQ30P04T1-CYG SMD P channel transistors |
auf Bestellung 350 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ35P02TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -140A; 24W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -35A Pulsed drain current: -140A Power dissipation: 24W Case: PDFN3030-8 Gate-source voltage: ±10V On-state resistance: 13mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ35P02TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -140A; 24W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -35A Pulsed drain current: -140A Power dissipation: 24W Case: PDFN3030-8 Gate-source voltage: ±10V On-state resistance: 13mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ37N03T1 | WAYON | WMQ37N03T1-CYG SMD N channel transistors |
auf Bestellung 480 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ40DN03T1 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 160A; 28.4W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 160A Power dissipation: 28.4W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhancement |
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Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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WMQ40N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 160A Power dissipation: 59W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 160 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ40N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 160A Power dissipation: 59W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 160 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ42P03T1 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -42A; Idm: -168A; 37W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -42A Pulsed drain current: -168A Power dissipation: 37W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 475 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ42P03T1 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -42A; Idm: -168A; 37W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -42A Pulsed drain current: -168A Power dissipation: 37W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 475 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ46N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 184A; 30W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 46A Pulsed drain current: 184A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 411 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ46N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 184A; 30W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 46A Pulsed drain current: 184A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 411 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ50N04T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 200A Power dissipation: 22.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 395 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ50N04T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 200A Power dissipation: 22.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 395 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ50P03T1 | WAYON | WMQ50P03T1-CYG SMD P channel transistors |
auf Bestellung 2826 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ50P04TS | WAYON | WMQ50P04TS-CYG SMD P channel transistors |
auf Bestellung 148 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ55N04T1 | WAYON | WMQ55N04T1-CYG SMD N channel transistors |
auf Bestellung 475 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ60P02TS | WAYON | WMQ60P02TS-CYG SMD P channel transistors |
auf Bestellung 281 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ80N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 320A Power dissipation: 44.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2965 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ80N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 320A Power dissipation: 44.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2965 Stücke: Lieferzeit 7-14 Tag (e) |
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WMR050N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 17A Pulsed drain current: 68A Power dissipation: 2.4W Case: DFN2020-6 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 328 Stücke: Lieferzeit 14-21 Tag (e) |
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WMR050N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 17A Pulsed drain current: 68A Power dissipation: 2.4W Case: DFN2020-6 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 328 Stücke: Lieferzeit 7-14 Tag (e) |
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WMR05N10TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 24A; 15W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5A Pulsed drain current: 24A Power dissipation: 15W Case: DFN2020-6 Gate-source voltage: ±20V On-state resistance: 0.26Ω Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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WMR05N10TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 24A; 15W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5A Pulsed drain current: 24A Power dissipation: 15W Case: DFN2020-6 Gate-source voltage: ±20V On-state resistance: 0.26Ω Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMR05P04TS | WAYON | WMR05P04TS-CYG SMD P channel transistors |
auf Bestellung 380 Stücke: Lieferzeit 7-14 Tag (e) |
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WMR07N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Pulsed drain current: 35A Power dissipation: 1.6W Case: DFN2020-6 On-state resistance: 18mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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WMR07N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Pulsed drain current: 35A Power dissipation: 1.6W Case: DFN2020-6 On-state resistance: 18mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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WMR07N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Pulsed drain current: 28A Power dissipation: 2.7W Case: DFN2020-6 On-state resistance: 33mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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WMR07N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Pulsed drain current: 28A Power dissipation: 2.7W Case: DFN2020-6 On-state resistance: 33mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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WMR07P03TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Pulsed drain current: -28A Power dissipation: 1.8W Case: DFN2020-6 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMQ175N10HG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 65.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 65.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 65.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 65.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 88+ | 0.82 EUR |
| 146+ | 0.49 EUR |
| 162+ | 0.44 EUR |
| 205+ | 0.35 EUR |
| 216+ | 0.33 EUR |
| WMQ175N10HG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 65.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 65.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 65.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 65.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 495 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 88+ | 0.82 EUR |
| 146+ | 0.49 EUR |
| 162+ | 0.44 EUR |
| 205+ | 0.35 EUR |
| 216+ | 0.33 EUR |
| 6000+ | 0.32 EUR |
| WMQ175N10LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 172A; 65.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 172A
Power dissipation: 65.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 172A; 65.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 172A
Power dissipation: 65.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 501 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 209+ | 0.34 EUR |
| 232+ | 0.31 EUR |
| 298+ | 0.24 EUR |
| 315+ | 0.23 EUR |
| WMQ175N10LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 172A; 65.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 172A
Power dissipation: 65.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 172A; 65.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 172A
Power dissipation: 65.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 501 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 209+ | 0.34 EUR |
| 232+ | 0.31 EUR |
| 298+ | 0.24 EUR |
| 315+ | 0.23 EUR |
| 6000+ | 0.22 EUR |
| WMQ18P04TS |
Hersteller: WAYON
WMQ18P04TS-CYG SMD P channel transistors
WMQ18P04TS-CYG SMD P channel transistors
auf Bestellung 497 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 96+ | 0.75 EUR |
| 407+ | 0.18 EUR |
| 428+ | 0.17 EUR |
| 12000+ | 0.16 EUR |
| WMQ20DN06TS |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 80A; 22.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 80A; 22.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 207+ | 0.35 EUR |
| 252+ | 0.28 EUR |
| 323+ | 0.22 EUR |
| 341+ | 0.21 EUR |
| WMQ20DN06TS |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 80A; 22.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 80A; 22.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 450 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 207+ | 0.35 EUR |
| 252+ | 0.28 EUR |
| 323+ | 0.22 EUR |
| 341+ | 0.21 EUR |
| 6000+ | 0.2 EUR |
| WMQ20N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 25W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 25W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 148+ | 0.49 EUR |
| WMQ20N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 25W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 25W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 148 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 148+ | 0.49 EUR |
| 309+ | 0.23 EUR |
| 6000+ | 0.14 EUR |
| WMQ24P04TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -24A; Idm: -96A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -24A
Pulsed drain current: -96A
Power dissipation: 27W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -24A; Idm: -96A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -24A
Pulsed drain current: -96A
Power dissipation: 27W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 275+ | 0.26 EUR |
| 329+ | 0.22 EUR |
| 345+ | 0.21 EUR |
| 439+ | 0.16 EUR |
| 463+ | 0.15 EUR |
| WMQ24P04TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -24A; Idm: -96A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -24A
Pulsed drain current: -96A
Power dissipation: 27W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -24A; Idm: -96A; 27W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -24A
Pulsed drain current: -96A
Power dissipation: 27W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 498 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 275+ | 0.26 EUR |
| 329+ | 0.22 EUR |
| 345+ | 0.21 EUR |
| 439+ | 0.16 EUR |
| 463+ | 0.15 EUR |
| WMQ25P03T1 |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -100A; 22W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 22W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -100A; 22W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 22W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 275+ | 0.26 EUR |
| WMQ25P03T1 |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -100A; 22W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 22W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -100A; 22W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 22W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 275 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 275+ | 0.26 EUR |
| 300+ | 0.24 EUR |
| 6000+ | 0.14 EUR |
| WMQ25P04T1 |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -25A; Idm: -100A; 31.2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 31.2W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -25A; Idm: -100A; 31.2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 31.2W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 488 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 219+ | 0.33 EUR |
| 265+ | 0.27 EUR |
| 343+ | 0.21 EUR |
| 363+ | 0.2 EUR |
| WMQ25P04T1 |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -25A; Idm: -100A; 31.2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 31.2W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -25A; Idm: -100A; 31.2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 31.2W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 488 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 219+ | 0.33 EUR |
| 265+ | 0.27 EUR |
| 343+ | 0.21 EUR |
| 363+ | 0.2 EUR |
| 6000+ | 0.19 EUR |
| WMQ25P06TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -100A; 30W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -100A; 30W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 88+ | 0.82 EUR |
| 146+ | 0.49 EUR |
| 163+ | 0.44 EUR |
| 208+ | 0.34 EUR |
| 220+ | 0.33 EUR |
| WMQ25P06TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -100A; 30W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -100A; 30W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 265 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 88+ | 0.82 EUR |
| 146+ | 0.49 EUR |
| 163+ | 0.44 EUR |
| 208+ | 0.34 EUR |
| 220+ | 0.33 EUR |
| 6000+ | 0.31 EUR |
| WMQ26P02TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -26A; Idm: -104A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -26A
Pulsed drain current: -104A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -26A; Idm: -104A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -26A
Pulsed drain current: -104A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 368+ | 0.19 EUR |
| 443+ | 0.16 EUR |
| 468+ | 0.15 EUR |
| 500+ | 0.14 EUR |
| WMQ26P02TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -26A; Idm: -104A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -26A
Pulsed drain current: -104A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -26A; Idm: -104A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -26A
Pulsed drain current: -104A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 368+ | 0.19 EUR |
| 443+ | 0.16 EUR |
| 468+ | 0.15 EUR |
| 500+ | 0.14 EUR |
| 3000+ | 0.12 EUR |
| WMQ28N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 54A; 21W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 54A
Power dissipation: 21W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 54A; 21W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 54A
Power dissipation: 21W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 332+ | 0.22 EUR |
| 414+ | 0.17 EUR |
| 439+ | 0.16 EUR |
| 490+ | 0.14 EUR |
| WMQ28N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 54A; 21W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 54A
Power dissipation: 21W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 54A; 21W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 54A
Power dissipation: 21W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 490 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 332+ | 0.22 EUR |
| 414+ | 0.17 EUR |
| 439+ | 0.16 EUR |
| 490+ | 0.14 EUR |
| 12000+ | 0.12 EUR |
| WMQ30DN04TS |
Hersteller: WAYON
WMQ30DN04TS-CYG Multi channel transistors
WMQ30DN04TS-CYG Multi channel transistors
auf Bestellung 489 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 290+ | 0.25 EUR |
| 307+ | 0.23 EUR |
| WMQ30DP03TS |
Hersteller: WAYON
WMQ30DP03TS-CYG Multi channel transistors
WMQ30DP03TS-CYG Multi channel transistors
auf Bestellung 490 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 110+ | 0.65 EUR |
| 311+ | 0.23 EUR |
| 329+ | 0.22 EUR |
| 12000+ | 0.21 EUR |
| WMQ30N02T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 75A; Idm: 300A; 37.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 37.8W
Case: PDFN3030-8
Gate-source voltage: ±10V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 43.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 75A; Idm: 300A; 37.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 37.8W
Case: PDFN3030-8
Gate-source voltage: ±10V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 43.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 280+ | 0.26 EUR |
| 338+ | 0.21 EUR |
| 358+ | 0.2 EUR |
| 451+ | 0.16 EUR |
| 477+ | 0.15 EUR |
| WMQ30N02T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 75A; Idm: 300A; 37.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 37.8W
Case: PDFN3030-8
Gate-source voltage: ±10V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 43.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 75A; Idm: 300A; 37.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 37.8W
Case: PDFN3030-8
Gate-source voltage: ±10V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 43.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 280+ | 0.26 EUR |
| 338+ | 0.21 EUR |
| 358+ | 0.2 EUR |
| 451+ | 0.16 EUR |
| 477+ | 0.15 EUR |
| WMQ30N03T2 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 100A; 24W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 100A; 24W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 460 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 103+ | 0.7 EUR |
| 230+ | 0.31 EUR |
| 277+ | 0.26 EUR |
| 374+ | 0.19 EUR |
| 394+ | 0.18 EUR |
| WMQ30N03T2 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 100A; 24W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 100A; 24W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 460 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 103+ | 0.7 EUR |
| 230+ | 0.31 EUR |
| 277+ | 0.26 EUR |
| 374+ | 0.19 EUR |
| 394+ | 0.18 EUR |
| WMQ30N04TS |
Hersteller: WAYON
WMQ30N04TS-CYG SMD N channel transistors
WMQ30N04TS-CYG SMD N channel transistors
auf Bestellung 499 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 108+ | 0.66 EUR |
| 455+ | 0.16 EUR |
| 481+ | 0.15 EUR |
| WMQ30N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 34.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 34.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 340 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 302+ | 0.24 EUR |
| 340+ | 0.21 EUR |
| WMQ30N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 34.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 34.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 340 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 302+ | 0.24 EUR |
| 340+ | 0.21 EUR |
| 500+ | 0.17 EUR |
| 3000+ | 0.15 EUR |
| 6000+ | 0.14 EUR |
| WMQ30P03T1 |
Hersteller: WAYON
WMQ30P03T1-CYG SMD P channel transistors
WMQ30P03T1-CYG SMD P channel transistors
auf Bestellung 485 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 104+ | 0.69 EUR |
| 435+ | 0.16 EUR |
| 12000+ | 0.15 EUR |
| WMQ30P04T1 |
Hersteller: WAYON
WMQ30P04T1-CYG SMD P channel transistors
WMQ30P04T1-CYG SMD P channel transistors
auf Bestellung 350 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 113+ | 0.63 EUR |
| 321+ | 0.22 EUR |
| 341+ | 0.21 EUR |
| WMQ35P02TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -140A; 24W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -140A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±10V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -140A; 24W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -140A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±10V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 353+ | 0.2 EUR |
| 417+ | 0.17 EUR |
| 443+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| WMQ35P02TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -140A; 24W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -140A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±10V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -140A; 24W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -140A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±10V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 353+ | 0.2 EUR |
| 417+ | 0.17 EUR |
| 443+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| 6000+ | 0.12 EUR |
| WMQ37N03T1 |
Hersteller: WAYON
WMQ37N03T1-CYG SMD N channel transistors
WMQ37N03T1-CYG SMD N channel transistors
auf Bestellung 480 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 158+ | 0.45 EUR |
| 480+ | 0.14 EUR |
| 12000+ | 0.12 EUR |
| WMQ40DN03T1 |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 160A; 28.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 28.4W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 160A; 28.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 28.4W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMQ40N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 59W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 59W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 160+ | 0.44 EUR |
| WMQ40N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 59W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 59W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 160 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 160+ | 0.44 EUR |
| 500+ | 0.16 EUR |
| 3000+ | 0.15 EUR |
| 6000+ | 0.14 EUR |
| WMQ42P03T1 |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -42A; Idm: -168A; 37W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -42A
Pulsed drain current: -168A
Power dissipation: 37W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -42A; Idm: -168A; 37W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -42A
Pulsed drain current: -168A
Power dissipation: 37W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 266+ | 0.27 EUR |
| 319+ | 0.22 EUR |
| 424+ | 0.17 EUR |
| 447+ | 0.16 EUR |
| WMQ42P03T1 |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -42A; Idm: -168A; 37W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -42A
Pulsed drain current: -168A
Power dissipation: 37W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -42A; Idm: -168A; 37W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -42A
Pulsed drain current: -168A
Power dissipation: 37W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 475 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 266+ | 0.27 EUR |
| 319+ | 0.22 EUR |
| 424+ | 0.17 EUR |
| 447+ | 0.16 EUR |
| 12000+ | 0.15 EUR |
| WMQ46N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 184A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 184A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 411 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 286+ | 0.25 EUR |
| 343+ | 0.21 EUR |
| 368+ | 0.19 EUR |
| 411+ | 0.17 EUR |
| WMQ46N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 184A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 184A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 411 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 286+ | 0.25 EUR |
| 343+ | 0.21 EUR |
| 368+ | 0.19 EUR |
| 411+ | 0.17 EUR |
| 6000+ | 0.14 EUR |
| WMQ50N04T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 395 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 208+ | 0.34 EUR |
| 248+ | 0.29 EUR |
| 332+ | 0.22 EUR |
| 350+ | 0.2 EUR |
| WMQ50N04T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 395 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 208+ | 0.34 EUR |
| 248+ | 0.29 EUR |
| 332+ | 0.22 EUR |
| 350+ | 0.2 EUR |
| WMQ50P03T1 |
Hersteller: WAYON
WMQ50P03T1-CYG SMD P channel transistors
WMQ50P03T1-CYG SMD P channel transistors
auf Bestellung 2826 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 204+ | 0.35 EUR |
| 285+ | 0.25 EUR |
| 302+ | 0.24 EUR |
| 12000+ | 0.23 EUR |
| WMQ50P04TS |
Hersteller: WAYON
WMQ50P04TS-CYG SMD P channel transistors
WMQ50P04TS-CYG SMD P channel transistors
auf Bestellung 148 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 86+ | 0.83 EUR |
| 148+ | 0.49 EUR |
| 12000+ | 0.31 EUR |
| WMQ55N04T1 |
Hersteller: WAYON
WMQ55N04T1-CYG SMD N channel transistors
WMQ55N04T1-CYG SMD N channel transistors
auf Bestellung 475 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 116+ | 0.62 EUR |
| 329+ | 0.22 EUR |
| 348+ | 0.21 EUR |
| 12000+ | 0.2 EUR |
| WMQ60P02TS |
Hersteller: WAYON
WMQ60P02TS-CYG SMD P channel transistors
WMQ60P02TS-CYG SMD P channel transistors
auf Bestellung 281 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 281+ | 0.26 EUR |
| 12000+ | 0.2 EUR |
| WMQ80N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2965 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 226+ | 0.32 EUR |
| 274+ | 0.26 EUR |
| 296+ | 0.24 EUR |
| 309+ | 0.23 EUR |
| 500+ | 0.22 EUR |
| WMQ80N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2965 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 226+ | 0.32 EUR |
| 274+ | 0.26 EUR |
| 296+ | 0.24 EUR |
| 309+ | 0.23 EUR |
| 500+ | 0.22 EUR |
| WMR050N03LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 2.4W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 2.4W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 298+ | 0.24 EUR |
| 328+ | 0.21 EUR |
| WMR050N03LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 2.4W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 2.4W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 328 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 298+ | 0.24 EUR |
| 328+ | 0.21 EUR |
| 500+ | 0.17 EUR |
| 3000+ | 0.15 EUR |
| 6000+ | 0.14 EUR |
| WMR05N10TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 24A; 15W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 24A
Power dissipation: 15W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 24A; 15W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 24A
Power dissipation: 15W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 725+ | 0.099 EUR |
| 887+ | 0.081 EUR |
| 995+ | 0.072 EUR |
| WMR05N10TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 24A; 15W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 24A
Power dissipation: 15W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 24A; 15W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 24A
Power dissipation: 15W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 725+ | 0.099 EUR |
| 887+ | 0.081 EUR |
| 995+ | 0.072 EUR |
| 6000+ | 0.053 EUR |
| WMR05P04TS |
Hersteller: WAYON
WMR05P04TS-CYG SMD P channel transistors
WMR05P04TS-CYG SMD P channel transistors
auf Bestellung 380 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 380+ | 0.19 EUR |
| 12000+ | 0.13 EUR |
| WMR07N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 35A
Power dissipation: 1.6W
Case: DFN2020-6
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 35A
Power dissipation: 1.6W
Case: DFN2020-6
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 348+ | 0.21 EUR |
| 496+ | 0.14 EUR |
| 550+ | 0.13 EUR |
| 705+ | 0.1 EUR |
| 747+ | 0.096 EUR |
| WMR07N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 35A
Power dissipation: 1.6W
Case: DFN2020-6
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 35A
Power dissipation: 1.6W
Case: DFN2020-6
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 348+ | 0.21 EUR |
| 496+ | 0.14 EUR |
| 550+ | 0.13 EUR |
| 705+ | 0.1 EUR |
| 747+ | 0.096 EUR |
| 12000+ | 0.093 EUR |
| WMR07N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2.7W
Case: DFN2020-6
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2.7W
Case: DFN2020-6
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 360+ | 0.2 EUR |
| 455+ | 0.16 EUR |
| 477+ | 0.15 EUR |
| 500+ | 0.14 EUR |
| WMR07N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2.7W
Case: DFN2020-6
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2.7W
Case: DFN2020-6
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 360+ | 0.2 EUR |
| 455+ | 0.16 EUR |
| 477+ | 0.15 EUR |
| 500+ | 0.14 EUR |
| 6000+ | 0.11 EUR |
| WMR07P03TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.8W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.8W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| 319+ | 0.22 EUR |
| 397+ | 0.18 EUR |
| 421+ | 0.17 EUR |
| 500+ | 0.14 EUR |




