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SBRT30U45CTFP SBRT30U45CTFP Diodes Incorporated SBRT30U45CTFP.pdf Description: DIODE SBR ARRAY 45V 15A ITO220AB
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2N7002H-7 2N7002H-7 Diodes Incorporated 2N7002H.pdf Description: MOSFET N-CH 60V 170MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 25 V
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AH1815-Z-7 AH1815-Z-7 Diodes Incorporated AH1815.pdf Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Tape & Reel (TR)
Features: Sleep Mode
Package / Case: SOT-553
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±54mT Trip, ±49mT Release
Current - Output (Max): 2.5mA
Current - Supply (Max): 12mA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 125°C
Part Status: Active
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AH9486-WUF-7 AH9486-WUF-7 Diodes Incorporated AH9485_86.pdf Description: IC MOTOR DRIVER 2V-6V 6TSOT26F
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: TSOT-26F
Voltage - Load: 2V ~ 6V
Technology: Power MOSFET
Applications: Fan Motor Driver
Voltage - Supply: 2V ~ 6V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 105°C (TA)
Interface: PWM
Current - Output: 300mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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AP1694AS-13 AP1694AS-13 Diodes Incorporated Description: IC LED DRIVER OFFL TRIAC 8SO
Part Status: Obsolete
Voltage - Supply (Max): 25V
Voltage - Supply (Min): 7V
Dimming: Triac
Supplier Device Package: 8-SO
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Applications: Lighting
Operating Temperature: -40°C ~ 105°C (TA)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AP2138N-3.6TRG1 AP2138N-3.6TRG1 Diodes Incorporated AP2138-9.pdf Description: IC REG LINEAR 3.6V 250MA SOT23-3
Protection Features: Over Current
Voltage Dropout (Max): 0.6V @ 250mA
Voltage - Output (Min/Fixed): 3.6V
Supplier Device Package: SOT-23-3
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 1.5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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APD240VRTR-G1 Diodes Incorporated APD240.pdf Description: DIODE SCHOTTKY 40V 2A DO214AC
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APD340VRTR-G1 APD340VRTR-G1 Diodes Incorporated APD340.pdf Description: DIODE SCHOTTKY 40V 3A DO214AC
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DMN1016UCB6-7 DMN1016UCB6-7 Diodes Incorporated Description: MOSFET N-CH 12V 5.5A U-WLB1510-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 920mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-WLB1510-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 6 V
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DMN1054UCB4-7 DMN1054UCB4-7 Diodes Incorporated DMN1054UCB4.pdf Description: MOSFET N-CH 8V 2.7A X1-WLB0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: X1-WLB0808-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V
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DMN2005UPS-13 DMN2005UPS-13 Diodes Incorporated DMN2005UPS.pdf Description: MOSFET N-CH 20V 20A POWERDI5060
Input Capacitance (Ciss) (Max) @ Vds: 5337 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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DMN3023L-7 DMN3023L-7 Diodes Incorporated DMN3023L.pdf Description: MOSFET N-CH 30V 6.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 15 V
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DMN61D9U-7 DMN61D9U-7 Diodes Incorporated DMN61D9U.pdf Description: MOSFET N-CH 60V 380MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DMN61D9UDW-7 DMN61D9UDW-7 Diodes Incorporated DMN61D9UDW.pdf Description: MOSFET 2N-CH 60V 0.35A
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DMN61D9UW-7 DMN61D9UW-7 Diodes Incorporated Description: MOSFET N-CH 60V 340MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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DMN62D0U-13 DMN62D0U-13 Diodes Incorporated DMN62D0U.pdf Description: MOSFET N-CH 60V 380MA SOT23
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 380mW (Ta)
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DMN62D0U-7 DMN62D0U-7 Diodes Incorporated DMN62D0U.pdf Description: MOSFET N-CH 60V 380MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
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DMN62D0UDW-7 DMN62D0UDW-7 Diodes Incorporated DMN62D0UDW.pdf Description: MOSFET 2N-CH 60V 0.35A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 350mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 320mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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DMN62D0UW-7 DMN62D0UW-7 Diodes Incorporated DMN62D0UW.pdf Description: MOSFET N-CH 60V 340MA SOT323
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 320mW (Ta)
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DMP2100UFU-7 DMP2100UFU-7 Diodes Incorporated DMP2100UFU.pdf Description: MOSFET 2P-CH 20V 5.7A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
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DMP32D5SFB-7B DMP32D5SFB-7B Diodes Incorporated DMP32D5SFB.pdf Description: MOSFET P-CH 30V 400MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Vgs (Max): ±25V
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DMP6050SFG-7 DMP6050SFG-7 Diodes Incorporated DMP6050SFG.pdf Description: MOSFET P-CH 60V 4.8A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
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DMT10H010LPS-13 DMT10H010LPS-13 Diodes Incorporated DMT10H010LPS.pdf Description: MOSFET N-CH 100V 9.4A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 98A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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DMT6009LFG-7 DMT6009LFG-7 Diodes Incorporated DMT6009LFG.pdf Description: MOSFET N-CH 60V 11A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.08W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
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DMT6010LPS-13 DMT6010LPS-13 Diodes Incorporated DMT6010LPS.pdf Description: MOSFET N-CH 60V 13.5A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
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DMTH6009LK3-13 DMTH6009LK3-13 Diodes Incorporated DMTH6009LK3.pdf Description: MOSFET N-CH 60V 14.2A/59A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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DMTH6010SK3-13 DMTH6010SK3-13 Diodes Incorporated DMTH6010SK3.pdf Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 30 V
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DT1240V3-04LP-7 DT1240V3-04LP-7 Diodes Incorporated DT1240V3-04LP.pdf Description: TVS DIODE 3.3VWM 8.8V UDFN251010
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: U-DFN2510-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 8.8V
Power - Peak Pulse: 60W
Power Line Protection: Yes
Part Status: Active
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DT1240V3-04SO-7 DT1240V3-04SO-7 Diodes Incorporated Description: TVS DIODE 3.3VWM 8.8VC SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOT-26
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 8.8V
Power - Peak Pulse: 60W
Power Line Protection: Yes
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SBR10U45D1-13 SBR10U45D1-13 Diodes Incorporated SBR10U45D1.pdf Description: DIODE SBR 45V 10A TO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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SBR12M120P5-13 SBR12M120P5-13 Diodes Incorporated SBR12M120P5.pdf Description: DIODE SBR 120V 12A POWERDI5
Current - Reverse Leakage @ Vr: 200 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 12A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2N7002H-7 2N7002H-7 Diodes Incorporated 2N7002H.pdf Description: MOSFET N-CH 60V 170MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 25 V
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AH1815-Z-7 AH1815-Z-7 Diodes Incorporated AH1815.pdf Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Cut Tape (CT)
Features: Sleep Mode
Package / Case: SOT-553
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±54mT Trip, ±49mT Release
Current - Output (Max): 2.5mA
Current - Supply (Max): 12mA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 125°C
Part Status: Active
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AH9486-WUF-7 AH9486-WUF-7 Diodes Incorporated AH9485_86.pdf Description: IC MOTOR DRIVER 2V-6V 6TSOT26F
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: TSOT-26F
Voltage - Load: 2V ~ 6V
Technology: Power MOSFET
Applications: Fan Motor Driver
Voltage - Supply: 2V ~ 6V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 105°C (TA)
Interface: PWM
Current - Output: 300mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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AP1694AS-13 AP1694AS-13 Diodes Incorporated Description: IC LED DRIVER OFFL TRIAC 8SO
Part Status: Obsolete
Voltage - Supply (Max): 25V
Voltage - Supply (Min): 7V
Dimming: Triac
Supplier Device Package: 8-SO
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Applications: Lighting
Operating Temperature: -40°C ~ 105°C (TA)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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AP2138N-3.6TRG1 AP2138N-3.6TRG1 Diodes Incorporated AP2138-9.pdf Description: IC REG LINEAR 3.6V 250MA SOT23-3
Protection Features: Over Current
Voltage Dropout (Max): 0.6V @ 250mA
Voltage - Output (Min/Fixed): 3.6V
Supplier Device Package: SOT-23-3
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 1.5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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APD240VRTR-G1 Diodes Incorporated APD240.pdf Description: DIODE SCHOTTKY 40V 2A DO214AC
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APD340VRTR-G1 APD340VRTR-G1 Diodes Incorporated APD340.pdf Description: DIODE SCHOTTKY 40V 3A DO214AC
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DMN1054UCB4-7 DMN1054UCB4-7 Diodes Incorporated DMN1054UCB4.pdf Description: MOSFET N-CH 8V 2.7A X1-WLB0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: X1-WLB0808-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V
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DMN2005UPS-13 DMN2005UPS-13 Diodes Incorporated DMN2005UPS.pdf Description: MOSFET N-CH 20V 20A POWERDI5060
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5337 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
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DMN3023L-7 DMN3023L-7 Diodes Incorporated DMN3023L.pdf Description: MOSFET N-CH 30V 6.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 15 V
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DMN61D9U-7 DMN61D9U-7 Diodes Incorporated DMN61D9U.pdf Description: MOSFET N-CH 60V 380MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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DMN61D9UDW-7 DMN61D9UDW-7 Diodes Incorporated DMN61D9UDW.pdf Description: MOSFET 2N-CH 60V 0.35A
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DMN62D0U-13 DMN62D0U-13 Diodes Incorporated DMN62D0U.pdf Description: MOSFET N-CH 60V 380MA SOT23
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 380mW (Ta)
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DMN62D0U-7 DMN62D0U-7 Diodes Incorporated DMN62D0U.pdf Description: MOSFET N-CH 60V 380MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
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DMN62D0UDW-7 DMN62D0UDW-7 Diodes Incorporated DMN62D0UDW.pdf Description: MOSFET 2N-CH 60V 0.35A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 350mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 320mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
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DMN62D0UW-7 DMN62D0UW-7 Diodes Incorporated DMN62D0UW.pdf Description: MOSFET N-CH 60V 340MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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DMP32D5SFB-7B DMP32D5SFB-7B Diodes Incorporated DMP32D5SFB.pdf Description: MOSFET P-CH 30V 400MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
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DMP6050SFG-7 DMP6050SFG-7 Diodes Incorporated DMP6050SFG.pdf Description: MOSFET P-CH 60V 4.8A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
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DMT10H010LPS-13 DMT10H010LPS-13 Diodes Incorporated DMT10H010LPS.pdf Description: MOSFET N-CH 100V 9.4A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 98A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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DMT6009LFG-7 DMT6009LFG-7 Diodes Incorporated DMT6009LFG.pdf Description: MOSFET N-CH 60V 11A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.08W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
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DMT6010LPS-13 DMT6010LPS-13 Diodes Incorporated DMT6010LPS.pdf Description: MOSFET N-CH 60V 13.5A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
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DMTH6009LK3-13 DMTH6009LK3-13 Diodes Incorporated DMTH6009LK3.pdf Description: MOSFET N-CH 60V 14.2A/59A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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DMTH6010SK3-13 DMTH6010SK3-13 Diodes Incorporated DMTH6010SK3.pdf Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 30 V
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DT1240V3-04LP-7 DT1240V3-04LP-7 Diodes Incorporated DT1240V3-04LP.pdf Description: TVS DIODE 3.3VWM 8.8V UDFN251010
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: U-DFN2510-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 8.8V
Power - Peak Pulse: 60W
Power Line Protection: Yes
Part Status: Active
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SBR10U45D1-13 SBR10U45D1-13 Diodes Incorporated SBR10U45D1.pdf Description: DIODE SBR 45V 10A TO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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SBR12M120P5-13 SBR12M120P5-13 Diodes Incorporated SBR12M120P5.pdf Description: DIODE SBR 120V 12A POWERDI5
Current - Reverse Leakage @ Vr: 200 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 12A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
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APD240VRTR-G1 Diodes Incorporated APD240.pdf Description: DIODE SCHOTTKY 40V 2A DO214AC
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AH1815-P-A AH1815-P-A Diodes Incorporated AH1815.pdf Description: MAGNETIC SWITCH OMNIPOLAR 3SIP
Part Status: Active
Test Condition: -40°C ~ 125°C
Supplier Device Package: 3-SIP
Current - Supply (Max): 12mA
Current - Output (Max): 2.5mA
Sensing Range: ±54mT Trip, ±49mT Release
Technology: Hall Effect
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Function: Omnipolar Switch
Mounting Type: Through Hole
Polarization: North Pole, South Pole
Output Type: Open Drain
Package / Case: 3-SIP, Formed Leads
Features: Sleep Mode
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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DMG7401SFGQ-13 DMG7401SFGQ-13 Diodes Incorporated DMG7401SFGQ.pdf Description: MOSFET P-CH 30V 9.8A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2987 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SBRT30U45CTFP SBRT30U45CTFP.pdf
SBRT30U45CTFP
Hersteller: Diodes Incorporated
Description: DIODE SBR ARRAY 45V 15A ITO220AB
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2N7002H-7 2N7002H.pdf
2N7002H-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 170MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 25 V
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3000+0.08 EUR
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AH1815-Z-7 AH1815.pdf
AH1815-Z-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Tape & Reel (TR)
Features: Sleep Mode
Package / Case: SOT-553
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±54mT Trip, ±49mT Release
Current - Output (Max): 2.5mA
Current - Supply (Max): 12mA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 125°C
Part Status: Active
Produkt ist nicht verfügbar
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AH9486-WUF-7 AH9485_86.pdf
AH9486-WUF-7
Hersteller: Diodes Incorporated
Description: IC MOTOR DRIVER 2V-6V 6TSOT26F
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: TSOT-26F
Voltage - Load: 2V ~ 6V
Technology: Power MOSFET
Applications: Fan Motor Driver
Voltage - Supply: 2V ~ 6V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 105°C (TA)
Interface: PWM
Current - Output: 300mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AP1694AS-13
AP1694AS-13
Hersteller: Diodes Incorporated
Description: IC LED DRIVER OFFL TRIAC 8SO
Part Status: Obsolete
Voltage - Supply (Max): 25V
Voltage - Supply (Min): 7V
Dimming: Triac
Supplier Device Package: 8-SO
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Applications: Lighting
Operating Temperature: -40°C ~ 105°C (TA)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AP2138N-3.6TRG1 AP2138-9.pdf
AP2138N-3.6TRG1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.6V 250MA SOT23-3
Protection Features: Over Current
Voltage Dropout (Max): 0.6V @ 250mA
Voltage - Output (Min/Fixed): 3.6V
Supplier Device Package: SOT-23-3
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 1.5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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3000+0.23 EUR
6000+0.21 EUR
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APD240VRTR-G1 APD240.pdf
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A DO214AC
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APD340VRTR-G1 APD340.pdf
APD340VRTR-G1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A DO214AC
Produkt ist nicht verfügbar
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DMN1016UCB6-7
DMN1016UCB6-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 5.5A U-WLB1510-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 920mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-WLB1510-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 6 V
Produkt ist nicht verfügbar
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DMN1054UCB4-7 DMN1054UCB4.pdf
DMN1054UCB4-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 8V 2.7A X1-WLB0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: X1-WLB0808-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V
Produkt ist nicht verfügbar
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DMN2005UPS-13 DMN2005UPS.pdf
DMN2005UPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 20A POWERDI5060
Input Capacitance (Ciss) (Max) @ Vds: 5337 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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2500+0.67 EUR
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DMN3023L-7 DMN3023L.pdf
DMN3023L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 6.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 15 V
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3000+0.25 EUR
6000+0.23 EUR
9000+0.21 EUR
15000+0.2 EUR
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DMN61D9U-7 DMN61D9U.pdf
DMN61D9U-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMN61D9UDW-7 DMN61D9UDW.pdf
DMN61D9UDW-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.35A
Produkt ist nicht verfügbar
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DMN61D9UW-7
DMN61D9UW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 340MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMN62D0U-13 DMN62D0U.pdf
DMN62D0U-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 380mW (Ta)
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
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10000+0.081 EUR
30000+0.079 EUR
50000+0.071 EUR
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DMN62D0U-7 DMN62D0U.pdf
DMN62D0U-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.1 EUR
6000+0.09 EUR
9000+0.086 EUR
15000+0.08 EUR
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DMN62D0UDW-7 DMN62D0UDW.pdf
DMN62D0UDW-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.35A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 350mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 320mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.13 EUR
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DMN62D0UW-7 DMN62D0UW.pdf
DMN62D0UW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 340MA SOT323
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 320mW (Ta)
auf Bestellung 435000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.095 EUR
6000+0.088 EUR
9000+0.074 EUR
30000+0.073 EUR
75000+0.064 EUR
150000+0.056 EUR
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DMP2100UFU-7 DMP2100UFU.pdf
DMP2100UFU-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 5.7A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
Produkt ist nicht verfügbar
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DMP32D5SFB-7B DMP32D5SFB.pdf
DMP32D5SFB-7B
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 400MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Vgs (Max): ±25V
auf Bestellung 10000 Stücke:
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10000+0.18 EUR
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DMP6050SFG-7 DMP6050SFG.pdf
DMP6050SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 4.8A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
auf Bestellung 2000 Stücke:
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AnzahlPrivatkunde
2000+0.51 EUR
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DMT10H010LPS-13 DMT10H010LPS.pdf
DMT10H010LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 9.4A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 98A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
2500+1.17 EUR
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DMT6009LFG-7 DMT6009LFG.pdf
DMT6009LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 11A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.08W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Produkt ist nicht verfügbar
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DMT6010LPS-13 DMT6010LPS.pdf
DMT6010LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Produkt ist nicht verfügbar
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DMTH6009LK3-13 DMTH6009LK3.pdf
DMTH6009LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 14.2A/59A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 17500 Stücke:
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2500+0.86 EUR
5000+0.83 EUR
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DMTH6010SK3-13 DMTH6010SK3.pdf
DMTH6010SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 30 V
auf Bestellung 10000 Stücke:
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2500+0.81 EUR
5000+0.75 EUR
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DT1240V3-04LP-7 DT1240V3-04LP.pdf
DT1240V3-04LP-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 8.8V UDFN251010
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: U-DFN2510-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 8.8V
Power - Peak Pulse: 60W
Power Line Protection: Yes
Part Status: Active
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.23 EUR
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DT1240V3-04SO-7
DT1240V3-04SO-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 8.8VC SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOT-26
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 8.8V
Power - Peak Pulse: 60W
Power Line Protection: Yes
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.23 EUR
6000+0.21 EUR
9000+0.19 EUR
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SBR10U45D1-13 SBR10U45D1.pdf
SBR10U45D1-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A TO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Produkt ist nicht verfügbar
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SBR12M120P5-13 SBR12M120P5.pdf
SBR12M120P5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 120V 12A POWERDI5
Current - Reverse Leakage @ Vr: 200 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 12A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2N7002H-7 2N7002H.pdf
2N7002H-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 170MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 25 V
auf Bestellung 3539 Stücke:
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AnzahlPrivatkunde
50+0.42 EUR
84+0.25 EUR
136+0.15 EUR
500+0.11 EUR
1000+0.1 EUR
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AH1815-Z-7 AH1815.pdf
AH1815-Z-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Cut Tape (CT)
Features: Sleep Mode
Package / Case: SOT-553
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±54mT Trip, ±49mT Release
Current - Output (Max): 2.5mA
Current - Supply (Max): 12mA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 125°C
Part Status: Active
auf Bestellung 1067 Stücke:
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23+0.94 EUR
26+0.83 EUR
27+0.79 EUR
29+0.74 EUR
50+0.7 EUR
100+0.67 EUR
500+0.6 EUR
1000+0.57 EUR
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AH9486-WUF-7 AH9485_86.pdf
AH9486-WUF-7
Hersteller: Diodes Incorporated
Description: IC MOTOR DRIVER 2V-6V 6TSOT26F
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: TSOT-26F
Voltage - Load: 2V ~ 6V
Technology: Power MOSFET
Applications: Fan Motor Driver
Voltage - Supply: 2V ~ 6V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 105°C (TA)
Interface: PWM
Current - Output: 300mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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AP1694AS-13
AP1694AS-13
Hersteller: Diodes Incorporated
Description: IC LED DRIVER OFFL TRIAC 8SO
Part Status: Obsolete
Voltage - Supply (Max): 25V
Voltage - Supply (Min): 7V
Dimming: Triac
Supplier Device Package: 8-SO
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Internal Switch(s): No
Applications: Lighting
Operating Temperature: -40°C ~ 105°C (TA)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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AP2138N-3.6TRG1 AP2138-9.pdf
AP2138N-3.6TRG1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.6V 250MA SOT23-3
Protection Features: Over Current
Voltage Dropout (Max): 0.6V @ 250mA
Voltage - Output (Min/Fixed): 3.6V
Supplier Device Package: SOT-23-3
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 1.5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 10277 Stücke:
Lieferzeit 10-14 Tag (e)
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39+0.55 EUR
57+0.37 EUR
65+0.32 EUR
100+0.29 EUR
250+0.26 EUR
500+0.25 EUR
1000+0.24 EUR
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APD240VRTR-G1 APD240.pdf
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A DO214AC
auf Bestellung 750030000 Stücke:
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APD340VRTR-G1 APD340.pdf
APD340VRTR-G1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A DO214AC
Produkt ist nicht verfügbar
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DMN1054UCB4-7 DMN1054UCB4.pdf
DMN1054UCB4-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 8V 2.7A X1-WLB0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: X1-WLB0808-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V
Produkt ist nicht verfügbar
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DMN2005UPS-13 DMN2005UPS.pdf
DMN2005UPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 20A POWERDI5060
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5337 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
auf Bestellung 7375 Stücke:
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16+1.33 EUR
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DMN3023L-7 DMN3023L.pdf
DMN3023L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 6.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 15 V
auf Bestellung 1243608 Stücke:
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DMN61D9U-7 DMN61D9U.pdf
DMN61D9U-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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DMN61D9UDW-7 DMN61D9UDW.pdf
DMN61D9UDW-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.35A
Produkt ist nicht verfügbar
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DMN62D0U-13 DMN62D0U.pdf
DMN62D0U-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 380mW (Ta)
auf Bestellung 96419 Stücke:
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DMN62D0U-7 DMN62D0U.pdf
DMN62D0U-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
auf Bestellung 17706 Stücke:
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112+0.19 EUR
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DMN62D0UDW-7 DMN62D0UDW.pdf
DMN62D0UDW-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.35A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 350mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 320mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 3384 Stücke:
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35+0.61 EUR
56+0.38 EUR
100+0.24 EUR
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DMN62D0UW-7 DMN62D0UW.pdf
DMN62D0UW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 340MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 437412 Stücke:
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38+0.57 EUR
54+0.39 EUR
111+0.19 EUR
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DMP32D5SFB-7B DMP32D5SFB.pdf
DMP32D5SFB-7B
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 400MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 11877 Stücke:
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23+0.94 EUR
37+0.57 EUR
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500+0.27 EUR
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5000+0.19 EUR
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DMP6050SFG-7 DMP6050SFG.pdf
DMP6050SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 4.8A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
auf Bestellung 2788 Stücke:
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11+1.96 EUR
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DMT10H010LPS-13 DMT10H010LPS.pdf
DMT10H010LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 9.4A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 98A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 5021 Stücke:
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11+1.99 EUR
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DMT6009LFG-7 DMT6009LFG.pdf
DMT6009LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 11A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.08W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 218 Stücke:
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7+3.2 EUR
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DMT6010LPS-13 DMT6010LPS.pdf
DMT6010LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 2318 Stücke:
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7+3.03 EUR
11+1.92 EUR
100+1.27 EUR
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DMTH6009LK3-13 DMTH6009LK3.pdf
DMTH6009LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 14.2A/59A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 19305 Stücke:
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7+3.25 EUR
11+2.07 EUR
100+1.39 EUR
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DMTH6010SK3-13 DMTH6010SK3.pdf
DMTH6010SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 30 V
auf Bestellung 11951 Stücke:
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7+3.01 EUR
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DT1240V3-04LP-7 DT1240V3-04LP.pdf
DT1240V3-04LP-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 8.8V UDFN251010
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: U-DFN2510-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 8.8V
Power - Peak Pulse: 60W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 11079 Stücke:
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72+0.3 EUR
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SBR10U45D1-13 SBR10U45D1.pdf
SBR10U45D1-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A TO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
auf Bestellung 2199 Stücke:
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7+3.01 EUR
11+1.9 EUR
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SBR12M120P5-13 SBR12M120P5.pdf
SBR12M120P5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 120V 12A POWERDI5
Current - Reverse Leakage @ Vr: 200 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 12A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
auf Bestellung 4307 Stücke:
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12+1.88 EUR
17+1.26 EUR
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2000+0.61 EUR
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APD240VRTR-G1 APD240.pdf
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A DO214AC
auf Bestellung 750030000 Stücke:
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AH1815-P-A AH1815.pdf
AH1815-P-A
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR 3SIP
Part Status: Active
Test Condition: -40°C ~ 125°C
Supplier Device Package: 3-SIP
Current - Supply (Max): 12mA
Current - Output (Max): 2.5mA
Sensing Range: ±54mT Trip, ±49mT Release
Technology: Hall Effect
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Function: Omnipolar Switch
Mounting Type: Through Hole
Polarization: North Pole, South Pole
Output Type: Open Drain
Package / Case: 3-SIP, Formed Leads
Features: Sleep Mode
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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DMG7401SFGQ-13 DMG7401SFGQ.pdf
DMG7401SFGQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 9.8A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2987 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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